TWI842205B - Optical element - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000013307 optical fiber Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 7
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 2
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
本發明是有關於一種光學元件。 The present invention relates to an optical element.
資料中心對於設備頻寬及速度的需求與日俱增。近年光學共封裝(co-packaged optics,CPO)架構興起,當網路交換器(switch)的頻寬進入51.2T世代,光纖封裝密度將遇到瓶頸。因此,光晶片(photonic chip)必須引入波長分波多工(Wavelength Division Multiplexing,WDM)元件,以緩解光纖密度議題。 Data centers have an increasing demand for equipment bandwidth and speed. In recent years, the co-packaged optics (CPO) architecture has emerged. When the bandwidth of network switches enters the 51.2T generation, the fiber packaging density will encounter a bottleneck. Therefore, photonic chips must introduce wavelength division multiplexing (WDM) components to alleviate the fiber density issue.
光晶片的輸入/輸出耦合器(I/O coupler)過往泛為使用光柵耦合器,但因其光頻寬窄,不適合與波長分波多工元件串接使用。反之,邊緣耦合器的光頻寬大,適合串接波長分波多工元件,但其最大的問題點在於量測效率非常低,難以導入量產。 In the past, grating couplers were widely used in the I/O couplers of optical chips, but due to their narrow optical bandwidth, they are not suitable for serial connection with wavelength division multiplexing components. On the contrary, edge couplers have a wide optical bandwidth and are suitable for serial connection with wavelength division multiplexing components, but their biggest problem is that their measurement efficiency is very low, making them difficult to introduce into mass production.
本發明提供一種光學元件,其能簡單進行量測,因此適於量產。 The present invention provides an optical element that can be easily measured and is therefore suitable for mass production.
本發明的一實施例提供一種光學元件,其包括基底、第 一絕緣層、第一光波導層、第一邊緣耦合器以及第一微光學元件。第一絕緣層設置於基底上。第一光波導層設置在第一絕緣層上,且用以傳遞光束。第一邊緣耦合器設置在第一絕緣層上,且與第一光波導層的一端耦接。第一微光學元件設置在基底上,且包括第一斜面。基底、第一絕緣層、第一光波導層及第一邊緣耦合器之間具有第一凹槽。第一微光學元件位於第一凹槽內。光束依序從第一光波導層傳遞至第一邊緣耦合器,從第一邊緣耦合器出射,再被第一斜面反射至光纖連接器。 An embodiment of the present invention provides an optical element, which includes a substrate, a first insulating layer, a first optical waveguide layer, a first edge coupler and a first micro-optical element. The first insulating layer is disposed on the substrate. The first optical waveguide layer is disposed on the first insulating layer and is used to transmit a light beam. The first edge coupler is disposed on the first insulating layer and is coupled to one end of the first optical waveguide layer. The first micro-optical element is disposed on the substrate and includes a first inclined surface. A first groove is provided between the substrate, the first insulating layer, the first optical waveguide layer and the first edge coupler. The first micro-optical element is located in the first groove. The light beam is sequentially transmitted from the first optical waveguide layer to the first edge coupler, emitted from the first edge coupler, and then reflected by the first inclined surface to the optical fiber connector.
基於上述,在本發明的一實施例中,由於光學元件採用第一邊緣耦合器,因此適於串接波長分波多工元件。而且,光學元件設有第一微光學元件,並利用第一微光學元件將光束耦合至光纖連接器,因此,本發明實施例的光學元件有效解決晶圓級量測效率過低的問題,並有助於整體系統的量產。 Based on the above, in one embodiment of the present invention, since the optical element adopts the first edge coupler, it is suitable for serial connection with the wavelength division multiplexing element. Moreover, the optical element is provided with a first micro-optical element, and the light beam is coupled to the optical fiber connector by using the first micro-optical element. Therefore, the optical element of the embodiment of the present invention effectively solves the problem of low wafer-level measurement efficiency and contributes to the mass production of the overall system.
10、10A、10B、10C、10D、10E、10F:光學元件 10, 10A, 10B, 10C, 10D, 10E, 10F: Optical components
100:基底 100: Base
200:第一絕緣層 200: First insulation layer
200’:第二絕緣層 200’: Second insulating layer
300:第一光波導層 300: First optical waveguide layer
400:第一邊緣耦合器 400: First edge coupler
400’:第二邊緣耦合器 400’: Second edge coupler
500、500A、500D、500E:第一微光學元件 500, 500A, 500D, 500E: The first micro-optical component
500’:第二微光學元件 500’: Second micro-optical element
500S1:第一斜面 500S1: First slope
500S1’:第三斜面 500S1’: The third slope
500S2:底面 500S2: Bottom
500S3:第二斜面 500S3: Second slope
500S4:垂直面 500S4: vertical surface
520:金屬層 520:Metal layer
600:懸臂結構 600: Cantilever structure
700:透鏡 700: Lens
A:空氣間隙 A: Air gap
d、S:距離 d, S: distance
D:直徑 D: Diameter
t:厚度 t: thickness
F:光纖連接器 F: Fiber optic connector
G:第一凹槽 G: First groove
G’:第二凹槽 G’: Second groove
H:高度 H: Height
L:長度 L: Length
L1:光束 L1: beam
P1:底部位置 P1: bottom position
P2:底部 P2: Bottom
W2:寬度 W2: Width
θ:夾角 θ: angle of intersection
圖1是根據本發明的第一實施例的光學元件的示意圖。 Figure 1 is a schematic diagram of an optical element according to the first embodiment of the present invention.
圖2是圖1中在第一微光學元件處的放大示意圖。 Figure 2 is an enlarged schematic diagram of the first micro-optical element in Figure 1.
圖3是根據本發明的第二實施例的光學元件的示意圖。 Figure 3 is a schematic diagram of an optical element according to the second embodiment of the present invention.
圖4是根據本發明的第三實施例的光學元件的示意圖。 Figure 4 is a schematic diagram of an optical element according to the third embodiment of the present invention.
圖5A是根據本發明的第四實施例的光學元件的示意圖。 FIG5A is a schematic diagram of an optical element according to the fourth embodiment of the present invention.
圖5B是圖5A中在透鏡處的放大示意圖。 Figure 5B is an enlarged schematic diagram of Figure 5A at the lens.
圖6是根據本發明的第五實施例的光學元件的示意圖。 Figure 6 is a schematic diagram of an optical element according to the fifth embodiment of the present invention.
圖7是根據本發明的第六實施例的光學元件的示意圖。 FIG7 is a schematic diagram of an optical element according to the sixth embodiment of the present invention.
圖8是根據本發明的第七實施例的光學元件的示意圖。 FIG8 is a schematic diagram of an optical element according to the seventh embodiment of the present invention.
圖1是根據本發明的第一實施例的光學元件的示意圖。請參考圖1,本發明的一實施例提供一種光學元件10,其包括基底100、第一絕緣層200、第一光波導層300、第一邊緣耦合器400以及第一微光學元件500。第一絕緣層200設置於基底100上。第一光波導層300設置在第一絕緣層200上,且用以傳遞光束L1。第一邊緣耦合器400設置在第一絕緣層200上,且與第一光波導層300的一端耦接。第一微光學元件500設置在基底100上,且包括第一斜面500S1。基底100、第一絕緣層200、第一光波導層300及第一邊緣耦合器400之間具有第一凹槽G。第一微光學元件500位於第一凹槽G內。光束L1依序從第一光波導層300傳遞至第一邊緣耦合器400,從第一邊緣耦合器400出射,再被第一斜面500S1反射至光纖連接器F。在一實施例中,光束L1也可依序從光纖連接器F傳遞至第一斜面500S1,被第一斜面500S1反射至第一邊緣耦合器400,並從第一邊緣耦合器400傳遞至第一光波導層300。
FIG1 is a schematic diagram of an optical element according to a first embodiment of the present invention. Referring to FIG1 , an embodiment of the present invention provides an
詳細來說,上述的第一凹槽G例如是對第一邊緣耦合器400、第一光波導層300及第一絕緣層200的邊緣進行深蝕刻後所
形成。而第一微光學元件500例如對半導體材料(如矽(Si)、一氮化矽(SiN)、氮氧化矽(SiON)等材質)或金屬以濕蝕刻方式製作出具有第一斜面500S1的微光學元件後,再利用覆晶接合器(flip chip bonder)等方式高精度封裝於第一凹槽G內。或者是,第一微光學元件500的材質例如聚合物(Polymer),並以3D列印技術形成具有第一斜面500S1的微光學元件。接著再利用取放等方式高精度封裝於第一凹槽G內。在另一實施例中,第一微光學元件500也可是矽、一氮化矽、氮氧化矽、聚合物、金屬等材料的混合結構,且折射率較佳是落在1.45至3.5的範圍內,但本發明不以此為限。
Specifically, the first groove G is formed by, for example, deep etching the edges of the
在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。
In this embodiment, a
在本實施例中,第一微光學元件500更包括底面500S2。底面500S2與第一斜面500S1連接。第一微光學元件500透過底面500S2與基底100連接。第一斜面500S1與底面500S2之間的夾角θ落在30度至60度的範圍。
In this embodiment, the first
在本實施例中,第一微光學元件500與第一邊緣耦合器400之間具有空氣間隙A。由於不希望光束L1在空氣中的傳輸距離太長,因此第一微光學元件500與第一邊緣耦合器400之間的距離d落在0.5微米(μm)至10微米的範圍內。
In this embodiment, there is an air gap A between the first
圖2是圖1中在第一微光學元件處的放大示意圖。請同時參考圖1與圖2,在本實施例中,第一微光學元件500在垂直於
光束L1於第一光波導層300的傳遞方向且垂直於基底100往第一光波導層300的方向上的長度L落在10微米至1毫米(mm)的範圍內。第一微光學元件500設置在第一邊緣耦合器400旁,其斜面500S1功能是將光束L1反射,將光束L1轉折向上,朝光纖連接器F傳遞,此第一微光學元件500的幾何結構長度L落在10微米(μm)至1毫米(mm)範圍內。
FIG2 is an enlarged schematic diagram of the first micro-optical element in FIG1. Please refer to FIG1 and FIG2 simultaneously. In this embodiment, the length L of the first
在本實施例中,第一微光學元件500在沿光束L1於第一光波導層300的傳遞方向上的寬度W2落在5微米至125微米的範圍內。
In this embodiment, the width W2 of the first
在本實施例中,第一微光學元件500在沿基底100往第一光波導層300的方向上的高度H落在1微米至62.5微米的範圍內。
In this embodiment, the height H of the first
基於上述,在本發明的一實施例中,由於光學元件10採用第一邊緣耦合器400,因此適於串接波長分波多工元件。而且,光學元件10設有第一微光學元件500,並利用第一微光學元件500將光束L1耦合至光纖連接器F。因此,相較於傳統使用邊緣耦合器的光學元件需切割晶圓才能對光晶片進行量測,本發明實施例的光學元件10有效解決晶圓級(Wafer-level)量測效率過低的問題,並有助於整體系統的量產。
Based on the above, in one embodiment of the present invention, since the
此外,微光學元件500的製作過程除了可利用蝕刻製程直接在光學元件10形成斜面500S1,本案也採用封裝方式(例如flip-chip bonder)將微光學元件500整合在邊緣耦合器400側邊,
形成45度反射斜面500S1,其具有幾個優點:(1)微光學元件500的幾何結構彈性度大(如圖3、圖4、圖5A、圖5B、圖6、圖7);(2)不需用酸、鹼溶液濕式蝕刻出反射斜面500S1,製程相對簡單;(3)微光學元件500與底面500S2接合溫度低(例如以PDMS bonding 80~100度C),不會影響其他前段製程已做好的元件(註:一般CMOS後段製程的熱預算約在400度C以下)。
In addition, the manufacturing process of the
圖3是根據本發明的第二實施例的光學元件的示意圖。請參考圖3,光學元件10A與圖1的光學元件10大致相同,其主要差異如下。在本實施例中,第一微光學元件500A更包括第二斜面500S3。第二斜面500S3相對於第一斜面500S1,且朝向基底100。其中,第二斜面500S3有助於在第一微光學元件500A的取放過程中對準於第一凹槽G,使第一微光學元件500A自動滑入第一凹槽G。
FIG3 is a schematic diagram of an optical element according to a second embodiment of the present invention. Referring to FIG3 , the
在本實施例中,在第一光波導層300往基底100的方向上,第一斜面500S1的底部位置P1低於第一光波導層300的底部P2,其有助於提升光束L1從第一邊緣耦合器400至第一斜面500S1的光耦合效率。
In this embodiment, in the direction from the first
此外,在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。而光學元件10A的其餘優點相似於光學元件10,在此不再贅述。
In addition, in this embodiment, a
圖4是根據本發明的第三實施例的光學元件的示意圖。請參考圖4,光學元件10B與圖3的光學元件10A大致相同,其
主要差異如下。在本實施例中,光學元件10B更包括懸臂結構600。懸臂結構600與第一微光學元件500A相連接。在另一實施例中,懸臂結構600可與第一微光學元件500A一體成形。其中,懸臂結構600用以承靠在第一邊緣耦合器400上,使第一斜面500S1的底部位置低於第一光波導層300的底部,進而提升光束L1從第一邊緣耦合器400至第一斜面500S1的光耦合效率。舉例來說,當進行蝕刻製程後使第一凹槽G太深時,第一斜面500S1的設置高度會太低而影響光學元件的光耦合效率。因此,設有懸臂結構600可避免前述第一凹槽G太深的問題。
FIG4 is a schematic diagram of an optical element according to a third embodiment of the present invention. Referring to FIG4 , the
此外,在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。而光學元件10B的其餘優點相似於光學元件10A,在此不再贅述。
In addition, in this embodiment, a
圖5A是根據本發明的第四實施例的光學元件的示意圖。圖5B是圖5A中在透鏡處的放大示意圖。請參考圖5A與圖5B,光學元件10C與圖4的光學元件10B大致相同,其主要差異如下。在本實施例中,光學元件10C更包括透鏡700。透鏡700配置於第一斜面500S1上,設置於光束L1的傳遞路徑上,且用於準直光束L1。在另一實施例中,透鏡700可與懸臂結構600一體成形,或透鏡700可與懸臂結構600及第一微光學元件500A一體成形。其中,光束L1從第一邊緣耦合器400出射後被第一斜面500S1反射至透鏡700,穿透透鏡700後再傳遞至光纖連接器F。或者是,光束L1依序從光纖連接器F傳遞至透鏡700,穿透透鏡
700後傳遞至第一斜面500S1,再被第一斜面500S1反射至第一邊緣耦合器400。
FIG. 5A is a schematic diagram of an optical element according to a fourth embodiment of the present invention. FIG. 5B is an enlarged schematic diagram of FIG. 5A at the lens. Referring to FIG. 5A and FIG. 5B , the
在本實施例中,透鏡700的直徑D較佳是對應於光纖連接器F的直徑,例如是落在單模(single-mode)光纖連接器與多模(multi-mode)光纖連接器的直徑大小之間。在一實施例中,透鏡700的直徑D落在8微米至62.5微米的範圍內。
In this embodiment, the diameter D of the
在本實施例中,透鏡700與第一邊緣耦合器400重疊區域的距離S落在0微米至D/2的範圍內。透鏡700的厚度t落在50微米至1毫米的範圍內。由於光學元件10C設有透鏡700,其可提高光耦合效率。
In this embodiment, the distance S between the overlapping area of the
此外,在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。而光學元件10C的其餘優點相似於光學元件10B,在此不再贅述。
In addition, in this embodiment, a
圖6是根據本發明的第五實施例的光學元件的示意圖。請參考圖6,光學元件10D與圖3的光學元件10A大致相同,其主要差異如下。在本實施例中,第一微光學元件500D中的第一斜面500S1與第二斜面500S3直接相連接。
FIG6 is a schematic diagram of an optical element according to the fifth embodiment of the present invention. Referring to FIG6 , the
此外,在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。而光學元件10D的其餘優點相似於光學元件10A,在此不再贅述。
In addition, in this embodiment, a
圖7是根據本發明的第六實施例的光學元件的示意圖。請參考圖7,光學元件10E與圖1的光學元件10大致相同,其主
要差異如下。在本實施例中,第一微光學元件500E更包括垂直面500S4。垂直面500S4的兩端分別連接至第一斜面500S1與底面500S3。
FIG. 7 is a schematic diagram of an optical element according to the sixth embodiment of the present invention. Referring to FIG. 7 , the
此外,在本實施例中,第一斜面500S1上鍍有反射的金屬層520,使光束L1可被第一斜面500S1反射。而光學元件10E的其餘優點相似於光學元件10,在此不再贅述。
In addition, in this embodiment, a
圖8是根據本發明的第七實施例的光學元件的示意圖。請參考圖8,光學元件10F與圖1的光學元件10大致相同,其主要差異如下。在本實施例中,光學元件10F更包括至少一第二絕緣層200’、至少一第二光波導層(未顯示於圖中)、至少一第二邊緣耦合器400’以及至少一第二微光學元件500’。第二絕緣層200’設置於基底100上。相似於圖1的第一光波導層300,第二光波導層設置在第二絕緣層200’上。第二邊緣耦合器400’設置在第二絕緣層200’上,且與第二光波導的一端(在垂直於圖6紙面方向上)耦接。第二微光學元件500’設置在基底100上,且第二微光學元件500’位於第一微光學元件500旁。每一第二微光學元件500’包括第三斜面500S1’。基底100、第二絕緣層200’、第二光波導層及第二邊緣耦合器400’之間具有至少一第二凹槽G’,且第二凹槽G’位於第一凹槽G旁。第二微光學元件500’位於第二凹槽G’內。
FIG8 is a schematic diagram of an optical element according to the seventh embodiment of the present invention. Referring to FIG8 , the
其中,第一微光學元件500及這些第二微光學元件500’在光路上各自對應一個光纖連接器。也就是說,可利用單顆轉移或巨量轉移將第一微光學元件500及第二微光學元件500’整合在
光學元件10F,因此提升整體晶圓級量測的資料流通量(throughput)。
The first
此外,在本實施例中,第一斜面500S1及第三斜面500S1’上鍍有反射的金屬層520,使光束可被第一斜面500S1或第三斜面500S1’反射。而光學元件10F的其餘優點相似於光學元件10,在此不再贅述。
In addition, in this embodiment, the first inclined surface 500S1 and the third inclined surface 500S1' are coated with a
綜上所述,在本發明的一實施例中,由於光學元件採用第一邊緣耦合器,因此適於串接波長分波多工元件。而且,光學元件設有第一微光學元件,並利用第一微光學元件將光束耦合至光纖連接器。因此,相較於傳統使用邊緣耦合器的光學元件需切割晶圓才能對光晶片進行量測,本發明實施例的光學元件有效解決晶圓級量測效率過低的問題,並有助於整體系統的量產。 In summary, in one embodiment of the present invention, since the optical element adopts the first edge coupler, it is suitable for serial connection with the wavelength division multiplexing element. Moreover, the optical element is provided with a first micro-optical element, and the light beam is coupled to the optical fiber connector by using the first micro-optical element. Therefore, compared with the traditional optical element using edge couplers, which requires wafer cutting to measure the optical chip, the optical element of the embodiment of the present invention effectively solves the problem of low wafer-level measurement efficiency and is conducive to the mass production of the overall system.
10:光學元件 10: Optical components
100:基底 100: Base
200:第一絕緣層 200: First insulation layer
300:第一光波導層 300: First optical waveguide layer
400:第一邊緣耦合器 400: First edge coupler
500:第一微光學元件 500: The first micro-optical element
500S1:第一斜面 500S1: First slope
500S2:底面 500S2: Bottom
520:金屬層 520:Metal layer
A:空氣間隙 A: Air gap
d:距離 d: distance
F:光纖連接器 F: Fiber optic connector
G:第一凹槽 G: First groove
L1:光束 L1: beam
θ:夾角 θ: angle of inclination
Claims (10)
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| TWI489162B (en) * | 2011-12-15 | 2015-06-21 | Intel Corp | An efficient backside-emitting/collecting grating coupler and a method for manufacturing the same |
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| WO2020246042A1 (en) * | 2019-06-07 | 2020-12-10 | 日本電信電話株式会社 | Surface-emitting optical circuit and surface-emitting light source using same |
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| CN101010609A (en) * | 2004-09-02 | 2007-08-01 | 日本电气株式会社 | Photoelectric composite module |
| JP2006178001A (en) * | 2004-12-20 | 2006-07-06 | Ibiden Co Ltd | Optical path conversion member, multilayer printed wiring board, and optical communication device |
| TWI489162B (en) * | 2011-12-15 | 2015-06-21 | Intel Corp | An efficient backside-emitting/collecting grating coupler and a method for manufacturing the same |
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| WO2020246042A1 (en) * | 2019-06-07 | 2020-12-10 | 日本電信電話株式会社 | Surface-emitting optical circuit and surface-emitting light source using same |
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