[go: up one dir, main page]

TWI841690B - Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound - Google Patents

Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound Download PDF

Info

Publication number
TWI841690B
TWI841690B TW109106444A TW109106444A TWI841690B TW I841690 B TWI841690 B TW I841690B TW 109106444 A TW109106444 A TW 109106444A TW 109106444 A TW109106444 A TW 109106444A TW I841690 B TWI841690 B TW I841690B
Authority
TW
Taiwan
Prior art keywords
compound
calcium
group
composition
titanium compound
Prior art date
Application number
TW109106444A
Other languages
Chinese (zh)
Other versions
TW202039792A (en
Inventor
內藤翔太
杉内瑞穂
有村孝
Original Assignee
日商住友化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商住友化學股份有限公司 filed Critical 日商住友化學股份有限公司
Publication of TW202039792A publication Critical patent/TW202039792A/en
Application granted granted Critical
Publication of TWI841690B publication Critical patent/TWI841690B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00Compounds of lead
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00Compounds of lead
    • C01G21/16Halides
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00Compounds containing amino groups bound to a carbon skeleton
    • C07C211/01Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
    • C07C211/20Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic unsaturated carbon skeleton
    • C07C211/21Monoamines
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/30Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having nitrogen atoms of imino groups quaternised
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

本發明係一種(1)具有鈣鈦礦型晶體結構之化合物,其於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60,且以作為1價陽離子之A、作為金屬離子之B、及作為選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子之X作為構成成分。The present invention is a (1) compound having a calcite-type crystal structure, wherein in an X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane is greater than 0.10 and less than 0.60, and the compound has A as a monovalent cation, B as a metal ion, and X as at least one anion selected from the group consisting of halide ions and thiocyanate ions as constituent components.

Description

化合物、組合物、膜、積層構造體、發光裝置、顯示器及化合物之製造方法Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound

本發明係關於一種化合物、組合物、膜、積層構造體、發光裝置、顯示器及化合物之製造方法。The present invention relates to a compound, a composition, a film, a laminate structure, a light-emitting device, a display and a method for producing the compound.

作為發光材料,發光性之半導體化合物受到關注。為了製造色純度較高之發光材料,作為發光性之半導體化合物,要求其發光光譜之半值寬更窄從而成為陡峭之發光波峰。 [先前技術文獻] [非專利文獻]As a luminescent material, luminescent semiconductor compounds have attracted attention. In order to produce a luminescent material with higher color purity, as a luminescent semiconductor compound, it is required that the half-value width of the luminescent spectrum is narrower so as to form a steep luminescent peak. [Prior art literature] [Non-patent literature]

[非專利文獻1]Advanced Materials 2016, 28, p.10088-10094[Non-patent document 1] Advanced Materials 2016, 28, p.10088-10094

[發明所欲解決之問題][The problem the invention is trying to solve]

作為上述發光性之半導體化合物,例如報告有具有鈣鈦礦型晶體結構之化合物(非專利文獻1)。然而,非專利文獻1中記載之具有鈣鈦礦型晶體結構之化合物之發光光譜之半值寬較寬,並非可期待色純度提高者。As the above-mentioned semiconductor compound with light-emitting property, for example, a compound having a calcite-type crystal structure has been reported (Non-patent Document 1). However, the half-value width of the light-emitting spectrum of the compound having a calcite-type crystal structure described in Non-patent Document 1 is relatively wide, and it is not expected that the color purity will be improved.

本發明係鑒於上述課題而完成者,其目的在於提供一種發光光譜之半值寬較窄之具有鈣鈦礦型晶體結構之化合物、含有上述化合物之組合物、以上述組合物作為形成材料之膜、含有上述膜之積層構造體、具備上述積層構造體之發光裝置、顯示器及化合物之製造方法。 [解決問題之技術手段]The present invention was completed in view of the above-mentioned subject, and its purpose is to provide a compound having a calcite-type crystal structure with a narrow half-value width of the luminescence spectrum, a composition containing the above-mentioned compound, a film formed by the above-mentioned composition, a multilayer structure containing the above-mentioned film, a light-emitting device having the above-mentioned multilayer structure, a display and a method for manufacturing the compound. [Technical means for solving the problem]

為了解決上述課題,本發明者等人進行潛心研究,結果完成以下本發明。In order to solve the above problems, the inventors and others conducted intensive research and completed the following invention.

本發明包含下述[1]~[10]。 [1]一種化合物,其係具有鈣鈦礦型晶體結構者,且於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60,並以A、B及X作為構成成分者; (A係於鈣鈦礦型晶體結構中,位於以B為中心之6面體之各頂點之成分,係1價陽離子; X係於鈣鈦礦型晶體結構中,位於以B為中心之8面體之各頂點之成分,係選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子; B係於鈣鈦礦型晶體結構中,位於以A為頂點所配置之6面體及以X為頂點所配置之8面體之中心之成分,係金屬離子)。 [2]一種組合物,其係含有技術方案1之化合物以及選自由下述(2-1)、下述(2-1)之改質體、下述(2-2)及下述(2-2)之改質體所組成之群中之至少一個化合物者; (2-1)矽氮烷 (2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物。 [3]一種組合物,其係含有如[1]之化合物以及選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種者; (3)溶劑 (4)聚合性化合物 (5)聚合物。 [4]如[2]之組合物,其進而含有選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種; (3)溶劑 (4)聚合性化合物 (5)聚合物。 [5]一種膜,其含有如[1]之化合物者。 [6]一種膜,其以如[2]至[4]中任一項之組合物作為形成材料。 [7]一種積層構造體,其含有如[5]或[6]之膜者。 [8]一種發光裝置,其具備如[7]之積層構造體。 [9]一種顯示器,其具備如[7]之積層構造體。 [10]一種半導體化合物之製造方法,其包括:將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料與水混合之步驟、及於上述水之存在下使上述原料反應之步驟,且該半導體化合物係上述水之質量WW 相對於上述原料中所含之金屬元素M之質量WM 之比即(WW /WM )為0.05~100且於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60之含有金屬元素M者。 [發明之效果]The present invention includes the following [1] to [10]. [1] A compound having a tantalum-type crystal structure, wherein in an X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane is greater than 0.10 and less than 0.60, and the compound has A, B and X as constituent components; (A is a component located at each vertex of a hexahedron with B as the center in the tantalum-type crystal structure, and is a monovalent cation; X is a component located at each vertex of an octahedron with B as the center in the tantalum-type crystal structure, and is at least one anion selected from the group consisting of halide ions and thiocyanate ions; B is a component located at the center of a hexahedron with A as the vertex and an octahedron with X as the vertex in a calcite-type crystal structure, and is a metal ion). [2] A composition comprising the compound of technical solution 1 and at least one compound selected from the group consisting of the following (2-1), the modified product of the following (2-1), the following (2-2), and the modified product of the following (2-2); (2-1) Silazane (2-2) A silicon compound having at least one group selected from the group consisting of an amino group, an alkoxy group, and an alkylthio group. [3] A composition comprising the compound of [1] and at least one selected from the group consisting of the following (3), the following (4), and the following (5); (3) Solvent (4) Polymerizable compound (5) Polymer. [4] A composition as described in [2], further comprising at least one selected from the group consisting of the following (3), the following (4) and the following (5); (3) a solvent (4) a polymerizable compound (5) a polymer. [5] A film comprising the compound as described in [1]. [6] A film formed from a composition as described in any one of [2] to [4]. [7] A layered structure comprising a film as described in [5] or [6]. [8] A light-emitting device having the layered structure as described in [7]. [9] A display having the layered structure as described in [7]. [10] A method for producing a semiconductor compound, comprising: mixing raw materials of either or both of a simple substance containing a metal element M and a compound containing a metal element M with water, and reacting the raw materials in the presence of the water, wherein the ratio of the mass W W of the water to the mass W M of the metal element M contained in the raw materials, i.e. (W W /W M ), is 0.05 to 100, and the half-value width of the peak of the Miller index (001) of the surface in the X-ray diffraction pattern is greater than 0.10 and less than 0.60. [Effects of the Invention]

根據本發明,可提供一種發光光譜之半值寬較窄且具有鈣鈦礦型晶體結構之化合物、含有上述化合物之組合物、以上述組合物作為形成材料之膜、含有上述膜之積層構造體、具備上述積層構造體之發光裝置及顯示器。 又,根據本發明,可提供一種發光光譜之半值寬較窄之化合物之製造方法。According to the present invention, a compound having a narrow half-value width of a luminescence spectrum and a tantalum-type crystal structure, a composition containing the above compound, a film formed of the above composition, a multilayer structure containing the above film, a light-emitting device and a display having the above multilayer structure can be provided. In addition, according to the present invention, a method for producing a compound having a narrow half-value width of a luminescence spectrum can be provided.

以下,揭示實施形態詳細說明本發明。The present invention is described in detail below with reference to the embodiments.

<具有鈣鈦礦型晶體結構之化合物> 本實施形態之化合物係以A、B及X作為構成成分之具有鈣鈦礦型晶體結構之化合物(以下,亦稱為「(1)鈣鈦礦化合物」或僅稱為「(1)」)。 A係於鈣鈦礦型晶體結構中,位於以B為中心之六面體之各頂點之成分,係1價陽離子。 B係於鈣鈦礦型晶體結構中,位於以A為頂點所配置之六面體及以X為頂點所配置之八面體之中心之成分,係金屬離子。B係可取X之八面體配位之金屬陽離子。 X係於鈣鈦礦型晶體結構中,為於以B為中心之八面體之各頂點之成分,係選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子。<Compounds having a calcite-type crystal structure> The compound of the present embodiment is a compound having a calcite-type crystal structure having A, B and X as constituent components (hereinafter also referred to as "(1) calcite-type compound" or simply "(1)"). A is a component located at each vertex of a hexahedron with B as the center in the calcite-type crystal structure, and is a monovalent cation. B is a component located at the center of a hexahedron with A as the vertex and an octahedron with X as the vertex in the calcite-type crystal structure, and is a metal ion. B is a metal cation that can be coordinated with the octahedron of X. X is a component at each vertex of an octahedron centered at B in a calcite-type crystal structure, and is at least one anion selected from the group consisting of halide ions and thiocyanate ions.

作為以A、B及X作為構成成分之鈣鈦礦化合物之結構,可為三維結構、二維結構、準二維(quasi-2D)結構之任一結構。 於三維結構之情形時,鈣鈦礦化合物之組成式係以ABX(3+δ) 表示。 於二維結構之情形時,鈣鈦礦化合物之組成式係以A2 BX(4+δ) 表示。The structure of the calcium-titanium compound having A, B and X as constituent components may be any of a three-dimensional structure, a two-dimensional structure and a quasi-2D structure. In the case of a three-dimensional structure, the composition formula of the calcium-titanium compound is represented by ABX (3+δ) . In the case of a two-dimensional structure, the composition formula of the calcium-titanium compound is represented by A 2 BX (4+δ) .

此處,δ係可根據B之電荷平衡而適宜變更之數,為-0.7以上0.7以下。例如,於A為1價陽離子,B為2價陽離子,X為1價陰離子之情形時,可以鈣鈦礦化合物成為電中性之方式選擇δ。所謂鈣鈦礦化合物為電中性係指鈣鈦礦化合物之電荷為0。Here, δ is a number that can be appropriately changed according to the charge balance of B, and is between -0.7 and 0.7. For example, when A is a monovalent cation, B is a divalent cation, and X is a monovalent anion, δ can be selected so that the calcium-titanium compound becomes electrically neutral. The so-called electrically neutral calcium-titanium compound means that the charge of the calcium-titanium compound is 0.

鈣鈦礦化合物含有以B為中心,將頂點設為X之八面體。八面體係以BX6 表示。 於鈣鈦礦化合物具有三維結構之情形時,對鈣鈦礦化合物中所含之BX6 而言,藉由使於結晶中相鄰之2個八面體(BX6 )共有八面體(BX6 )中位於頂點之1個X,而構成三維網狀結構。The calcium-titanium compound contains an octahedron with B as the center and X as the vertex. The octahedron is represented by BX 6. When the calcium-titanium compound has a three-dimensional structure, BX 6 contained in the calcium-titanium compound forms a three-dimensional network structure by making two adjacent octahedrons (BX 6 ) in the crystal share one X located at the vertex of the octahedron (BX 6 ).

於鈣鈦礦化合物具有二維結構之情形時,對鈣鈦礦化合物中所含之BX6 而言,藉由使於結晶中相鄰之2個八面體(BX6 )共有八面體(BX6 )中位於頂點之2個X而共有八面體之稜線,構成二維相連之層。鈣鈦礦化合物中,具有二維相連之包含BX6 之層與包含A之層交替積層而成之結構。In the case of a calcium-titanium compound having a two-dimensional structure, BX 6 contained in the calcium-titanium compound forms a two-dimensionally connected layer by having two adjacent octahedrons (BX 6 ) in the crystal share two Xs at the vertices of the octahedron (BX 6 ) and share the edges of the octahedron. The calcium-titanium compound has a structure in which two-dimensionally connected layers containing BX 6 and layers containing A are alternately stacked.

於本說明書中,鈣鈦礦化合物之晶體結構可藉由X射線繞射圖案(以下,亦稱為XRD)而確認。進而,包含複數個鈣鈦礦化合物之鈣鈦礦化合物之集合體中之鈣鈦礦化合物各自之結晶分佈亦又可藉由XRD而確認。In this specification, the crystal structure of a calcium-titanium compound can be confirmed by X-ray diffraction pattern (hereinafter, also referred to as XRD). Furthermore, the crystal distribution of each calcium-titanium compound in an aggregate of calcium-titanium compounds including a plurality of calcium-titanium compounds can also be confirmed by XRD.

於鈣鈦礦化合物具有三維結構之鈣鈦礦型晶體結構之情形時,通常於X射線繞射圖案中,鈣鈦礦化合物之面之密勒指數(hkl)於2θ=12~18°之位置確認源自(hkl)=(001)之波峰。或於2θ=18~25°之位置確認源自(hkl)=(110)之波峰。When the calcite-titano compound has a three-dimensional calcite-titano type crystal structure, the Miller index (hkl) of the surface of the calcite-titano compound usually confirms a peak derived from (hkl) = (001) at a position of 2θ = 12 to 18° in the X-ray diffraction pattern, or confirms a peak derived from (hkl) = (110) at a position of 2θ = 18 to 25°.

於鈣鈦礦化合物具有三維結構之鈣鈦礦型晶體結構之情形時,通常於X射線繞射圖案中,較佳為鈣鈦礦化合物之面之密勒指數(hkl)於2θ=13~16°之位置確認源自(hkl)=(001)之波峰,或於2θ=20~23°之位置確認源自(hkl)=(110)之波峰。When the calcite-titanate compound has a three-dimensional calcite-titanate type crystal structure, it is usually preferred that the Miller index (hkl) of the surface of the calcite-titanate compound confirms a peak originating from (hkl) = (001) at a position of 2θ = 13 to 16°, or confirms a peak originating from (hkl) = (110) at a position of 2θ = 20 to 23° in an X-ray diffraction pattern.

於鈣鈦礦化合物具有二維結構之鈣鈦礦型晶體結構之情形時,通常於X射線繞射圖案中,鈣鈦礦化合物之面之密勒指數(hkl)於2θ=1~10°之位置確認源自(hkl)=(002)之波峰。又,較佳為於2θ=2~8°之位置確認源自(hkl)=(002)之波峰。When the calcite-titano compound has a two-dimensional calcite-titano type crystal structure, the Miller index (hkl) of the surface of the calcite-titano compound usually confirms a peak derived from (hkl) = (002) at a position of 2θ = 1 to 10° in the X-ray diffraction pattern. Preferably, a peak derived from (hkl) = (002) is confirmed at a position of 2θ = 2 to 8°.

鈣鈦礦化合物較佳為具有三維結構。The calcium-titanium compound preferably has a three-dimensional structure.

於藉由XRD而測定之X射線繞射圖案中,本實施形態之(1)鈣鈦礦化合物之(hkl)=(001)之波峰之半值寬為0.10(deg)以上且未達0.60(deg)。上述半值寬較佳為0.15(deg)以上0.50(deg)以下,較佳為0.20(deg)以上0.30(deg)以下,較佳為0.15(deg)以上0.28(deg)以下,較佳為0.20(deg)以上0.25(deg)以下。 於本實施形態之其他態樣中,(1)鈣鈦礦化合物之(hkl)=(001)之波峰之半值寬為0.10、0.11、0.13、0.14、0.15、0.16、0.17、0.18、0.19、0.20、0.21、0.22、0.23、0.24、0.25、0.26、0.27、0.28、0.29、0.30、0.35、0.40、0.45、0.50、0.55(deg)以上。 於本實施形態之其他態樣中,(1)鈣鈦礦化合物之(hkl)=(001)之波峰之半值寬為0.15、0.16、0.17、0.18、0.19、0.20、0.21、0.22、0.23、0.24、0.25、0.26、0.27、0.28、0.29、0.30、0.31、0.32、0.33、0.34、0.35、0.36、0.37、0.38、0.39、0.40、0.41、0.42、0.43、0.44、0.45、0.46、0.47、0.48、0.49、0.50、0.51、0.52、0.53、0.54、0.55、0.56、0.57、0.58、0.59(deg)以下。若(1)鈣鈦礦化合物之(hkl)=(001)之波峰之半值寬為0.15以上,則穩定地形成鈣鈦礦化合物之結晶。又,若上述波峰之半值寬為0.20以上,則除上述效果外,激發光之吸收率亦提高。 若(1)鈣鈦礦化合物之(hkl)=(001)之波峰之半值寬未達0.60,則發光波長之半值寬變窄。In the X-ray diffraction pattern measured by XRD, the half-value width of the peak of (hkl) = (001) of the calcium-titanium compound (1) of the present embodiment is 0.10 (deg) or more and less than 0.60 (deg). The above half-value width is preferably 0.15 (deg) or more and 0.50 (deg) or less, preferably 0.20 (deg) or more and 0.30 (deg) or less, preferably 0.15 (deg) or more and 0.28 (deg) or less, and preferably 0.20 (deg) or more and 0.25 (deg) or less. In other aspects of this embodiment, (1) the half-value width of the peak of (hkl) = (001) of the calcium-titanium compound is 0.10, 0.11, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24, 0.25, 0.26, 0.27, 0.28, 0.29, 0.30, 0.35, 0.40, 0.45, 0.50, 0.55 (deg) or more. In other aspects of this embodiment, (1) the half width of the peak of (hkl) = (001) of the calcium-titanium compound is 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.21, 0.22, 0.23, 0.24, 0.25, 0.26, 0.27, 0.28, 0.29, 0.30, 0.31, 0.32, 0.33, 0.34, 0.35, 0.36, 0.37, 0.38, 0.39, 0.40, 0.41, 0.42, 0.43, 0.44, 0.45, 0.46, 0.47, 0.48, 0.49, 0.50, 0.51, 0.52, 0.53, 0.54, 0.55, 0.56, 0.57, 0.58, 0.59 (deg) or less. If (1) the half-value width of the peak of (hkl) = (001) of the calcium-titanium compound is 0.15 or more, the crystal of the calcium-titanium compound is stably formed. Moreover, if the half-value width of the above peak is 0.20 or more, in addition to the above effect, the absorption rate of the excitation light is also improved. If (1) the half-value width of the peak of (hkl) = (001) of the calcium-titanium compound does not reach 0.60, the half-value width of the luminescence wavelength becomes narrower.

(1)鈣鈦礦化合物之(hkl)=(001)之半值寬可自XRD圖案(CuKα射線),使用綜合粉末X射線解析軟體PDXL(Rigaku公司製造)而算出。(1) The half width of (hkl) = (001) of the calcium-titanium compound can be calculated from the XRD pattern (CuKα ray) using the integrated powder X-ray analysis software PDXL (manufactured by Rigaku Corporation).

本實施形態之鈣鈦礦化合物及藉由下述製造方法而製造之半導體化合物之(hkl)=(001)之半值寬具體而言可利用如下方式確認。 將含有本實施形態之鈣鈦礦化合物或藉由下述製造方法而製造之半導體化合物之分散液組合物0.05 mL滴至洗淨之無反射板,使之自然乾燥。進行將CuKα作為放射源且繞射角2θ之測定範圍為5°以上60°以下之粉末X射線繞射測定,決定與(hkl)=(001)對應之波峰。進而,使用上述解析軟體,算出決定之(hkl)=(001)之半值寬。Specifically, the half-value width of (hkl) = (001) of the calcium-titanium compound of the present embodiment and the semiconductor compound produced by the following production method can be confirmed in the following manner. 0.05 mL of the dispersion composition containing the calcium-titanium compound of the present embodiment or the semiconductor compound produced by the following production method is dropped onto a clean non-reflective plate and allowed to dry naturally. Powder X-ray diffraction measurement is performed using CuKα as a radiation source and the measurement range of the diffraction angle 2θ is 5° to 60° to determine the peak corresponding to (hkl) = (001). Furthermore, the half-value width of the determined (hkl) = (001) is calculated using the above-mentioned analysis software.

(構成成分A) 構成鈣鈦礦化合物之A為1價陽離子。作為A,可列舉:銫離子、有機銨離子或脒鎓離子。(Component A) The component A constituting the calcium-titanium compound is a monovalent cation. Examples of A include: cesium ions, organic ammonium ions, or amidinium ions.

(有機銨離子) 作為A之有機銨離子,具體可列舉:下述式(A3)所表示之陽離子。(Organic ammonium ions) Specific examples of organic ammonium ions as A include cations represented by the following formula (A3).

[化1] [Chemistry 1]

式(A3)中,R6 ~R9 分別獨立地表示氫原子、烷基或環烷基。其中,R6 ~R9 之至少一個為烷基或環烷基,R6 ~R9 之全部不會同時為氫原子。In formula (A3), R 6 to R 9 independently represent a hydrogen atom, an alkyl group or a cycloalkyl group, wherein at least one of R 6 to R 9 is an alkyl group or a cycloalkyl group, and all of R 6 to R 9 are not hydrogen atoms at the same time.

R6 ~R9 所表示之烷基可為直鏈狀,亦可為支鏈狀。又,R6 ~R9 所表示之烷基可分別獨立地具有胺基作為取代基。The alkyl groups represented by R 6 to R 9 may be linear or branched. Furthermore, the alkyl groups represented by R 6 to R 9 may each independently have an amino group as a substituent.

於某個態樣中,R6 ~R9 所表示之烷基之碳原子數分別獨立地通常為1~20,較佳為1~4,更佳為1~3,進而較佳為1。 於某個態樣中,R6 ~R9 所表示之烷基之碳原子數分別獨立地為1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19以上。於其他態樣中,R6 ~R9 所表示之烷基之碳原子數分別獨立地為20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4、3、2以下。In one embodiment, the number of carbon atoms in the alkyl group represented by R 6 to R 9 is usually 1 to 20, preferably 1 to 4, more preferably 1 to 3, and even more preferably 1. In one embodiment, the number of carbon atoms in the alkyl group represented by R 6 to R 9 is 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or more. In another embodiment, the number of carbon atoms in the alkyl group represented by R 6 to R 9 is 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, 4, 3, or 2 or less.

R6 ~R9 所表示之環烷基可分別獨立地具有胺基作為取代基。The cycloalkyl groups represented by R 6 to R 9 may each independently have an amino group as a substituent.

於某個態樣中,R6 ~R9 所表示之環烷基之碳原子數分別獨立地通常為3~30,較佳為3~11,更佳為3~8。碳原子數包含取代基之碳原子數。 於某個態樣中,R6 ~R9 所表示之環烷基之碳原子數分別獨立地為3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29以上。於其他態樣中,R6 ~R9 所表示之環烷基之碳原子數分別獨立地為30、29、28、27、26、25、24、23、22、21、20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4以下。In one embodiment, the number of carbon atoms in the cycloalkyl group represented by R 6 to R 9 is usually 3 to 30, preferably 3 to 11, and more preferably 3 to 8. The number of carbon atoms includes the number of carbon atoms in the substituent. In one embodiment, the number of carbon atoms in the cycloalkyl group represented by R 6 to R 9 is usually 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 or more. In other embodiments, the number of carbon atoms in the cycloalkyl groups represented by R 6 to R 9 is independently 30, 29, 28, 27, 26, 25, 24, 23, 22, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, or 4 or less.

於某個態樣中,作為R6 ~R9 所表示之基,分別獨立地較佳為氫原子或烷基。In a certain aspect, the groups represented by R 6 to R 9 are preferably independently a hydrogen atom or an alkyl group.

於鈣鈦礦化合物含有上述式(A3)所表示之有機銨離子作為A之情形時,較佳為式(A3)中可含有之烷基及環烷基之數較少。又,較佳為式(A3)中可含有之烷基及環烷基之碳原子數較小。藉此,可獲得發光強度較高之三維結構之鈣鈦礦化合物。When the calcium-titanium compound contains the organic ammonium ion represented by the above formula (A3) as A, it is preferred that the number of alkyl and cycloalkyl groups that can be contained in the formula (A3) is small. In addition, it is preferred that the number of carbon atoms in the alkyl and cycloalkyl groups that can be contained in the formula (A3) is small. In this way, a calcium-titanium compound with a three-dimensional structure having a high luminescence intensity can be obtained.

於式(A3)所表示之有機銨離子中,較佳為R6 ~R9 所表示之烷基及環烷基中所含之碳原子之總數為1~4。又,於式(A3)所表示之有機銨離子中,更佳為R6 ~R9 中之1個為碳原子數1~3之烷基,R6 ~R9 中之3個為氫原子。In the organic ammonium ion represented by formula (A3), it is preferred that the total number of carbon atoms contained in the alkyl and cycloalkyl groups represented by R 6 to R 9 is 1 to 4. In the organic ammonium ion represented by formula (A3), it is more preferred that one of R 6 to R 9 is an alkyl group having 1 to 3 carbon atoms, and three of R 6 to R 9 are hydrogen atoms.

作為R6 ~R9 之烷基,可例示:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基、異戊基、新戊基、第三戊基、1-甲基丁基、正己基、2-甲基戊基、3-甲基戊基、2,2-二甲基丁基、2,3-二甲基丁基、正庚基、2-甲基己基、3-甲基己基、2,2-二甲基戊基、2,3-二甲基戊基、2,4-二甲基戊基、3,3-二甲基戊基、3-乙基戊基、2,2,3-三甲基丁基、正辛基、異辛基、2-乙基己基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基,但並不限定於該等。Examples of the alkyl group for R 6 to R 9 include, but are not limited to, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, t-butyl, n-pentyl, isopentyl, neopentyl, t-pentyl, 1-methylbutyl, n-hexyl, 2-methylpentyl, 3-methylpentyl, 2,2-dimethylbutyl, 2,3-dimethylbutyl, n-heptyl, 2-methylhexyl, 3-methylhexyl, 2,2-dimethylpentyl, 2,3-dimethylpentyl, 2,4-dimethylpentyl, 3,3-dimethylpentyl, 3-ethylpentyl, 2,2,3-trimethylbutyl, n-octyl, isooctyl, 2-ethylhexyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, and eicosyl.

作為R6 ~R9 之環烷基,可分別獨立地列舉R6 ~R9 之烷基中例示之碳原子數3以上之烷基形成環者。作為一例,可例示:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬基、環癸基、降𦯉基、異𦯉基、1-金剛烷基、2-金剛烷基、三環癸基等,但並不限定於該等。As the cycloalkyl group for R 6 to R 9 , any of the alkyl groups having 3 or more carbon atoms listed as examples for the alkyl groups for R 6 to R 9 can be independently listed, and can include, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, northiophene, isothiophene, 1-adamantyl, 2-adamantyl, tricyclodecyl, and the like, but the present invention is not limited thereto.

於某個態樣中,作為A所表示之有機銨離子,較佳為CH3 NH3 + (亦稱為甲基銨離子)、C2 H5 NH3 + (亦稱為乙基銨離子)或C3 H7 NH3 + (亦成為丙基銨離子),更佳為甲基銨離子或乙基銨離子,進而較佳為甲基銨離子。In one embodiment, the organic ammonium ion represented by A is preferably CH 3 NH 3 + (also called methylammonium ion), C 2 H 5 NH 3 + (also called ethylammonium ion) or C 3 H 7 NH 3 + (also called propylammonium ion), more preferably methylammonium ion or ethylammonium ion, and still more preferably methylammonium ion.

(脒鎓離子) 於某個態樣中,作為A所表示之脒鎓離子,例如可列舉:下述式(A4)所表示之脒鎓離子。 (R10 R11 N=CH-NR12 R13 )+ ・・・(A4)(Amidinium ion) In one embodiment, examples of the amidinium ion represented by A include amidinium ions represented by the following formula (A4). (R 10 R 11 N=CH-NR 12 R 13 ) + ... (A4)

式(A4)中,R10 ~R13 分別獨立地表示氫原子、烷基或環烷基。In formula (A4), R 10 to R 13 each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.

R10 ~R13 所表示之烷基分別獨立地可為直鏈狀,亦可為支鏈狀。又,R10 ~R13 所表示之烷基可分別獨立地具有胺基作為取代基。The alkyl groups represented by R 10 to R 13 may be independently linear or branched. Furthermore, the alkyl groups represented by R 10 to R 13 may have an amino group as a substituent.

於某個態樣中,R10 ~R13 所表示之烷基之碳原子數分別獨立地通常為1~20,較佳為1~4,更佳為1~3。 於某個態樣中,R10 ~R13 所表示之烷基之碳原子數分別獨立地為1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19以上。於其他態樣中,R10 ~R13 所表示之烷基之碳原子數分別獨立地為20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4、3、2以下。In one embodiment, the number of carbon atoms in the alkyl group represented by R10 to R13 is usually 1 to 20, preferably 1 to 4, and more preferably 1 to 3. In one embodiment, the number of carbon atoms in the alkyl group represented by R10 to R13 is 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or more. In another embodiment, the number of carbon atoms in the alkyl group represented by R10 to R13 is 20, 19, 18, 17, 16, 15, 14, 13, 12 , 11, 10 , 9, 8, 7, 6, 5, 4, 3, or 2 or less.

R10 ~R13 所表示之環烷基可分別獨立地具有胺基作為取代基。The cycloalkyl groups represented by R 10 to R 13 may each independently have an amino group as a substituent.

於某個態樣中,R10 ~R13 所表示之環烷基之碳原子數分別獨立地通常為3~30,較佳為3~11,更佳為3~8。碳原子數包含取代基之碳原子數。 於某個態樣中,R10 ~R13 所表示之環烷基之碳原子數分別獨立地為3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29以上。於其他態樣中,R10 ~R13 所表示之環烷基之碳原子數分別獨立地為30、29、28、27、26、25、24、23、22、21、20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4以下。In one embodiment, the number of carbon atoms in the cycloalkyl group represented by R10 to R13 is usually 3 to 30, preferably 3 to 11, and more preferably 3 to 8. The number of carbon atoms includes the number of carbon atoms in the substituent. In one embodiment, the number of carbon atoms in the cycloalkyl group represented by R10 to R13 is 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 or more. In other embodiments, the number of carbon atoms in the cycloalkyl groups represented by R10 - R13 is independently 30, 29, 28, 27, 26, 25, 24, 23, 22, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, or 4 or less.

作為R10 ~R13 之烷基之具體例,可分別獨立地列舉與R6 ~R9 中例示之烷基相同之基。 作為R10 ~R13 之環烷基之具體例,可分別獨立地列舉與R6 ~R9 中例示之環烷基相同之基。Specific examples of the alkyl group for R 10 to R 13 include the same groups as those exemplified for R 6 to R 9. Specific examples of the cycloalkyl group for R 10 to R 13 include the same groups as those exemplified for R 6 to R 9 .

於某個態樣中,作為R10 ~R13 所表示之基,分別獨立地較佳為氫原子或烷基。In a certain aspect, the groups represented by R 10 to R 13 are preferably independently a hydrogen atom or an alkyl group.

藉由使式(A4)中所含之烷基及環烷基之數較少、以及使烷基及環烷基之碳原子數較小,可獲得發光強度較高之三維結構之鈣鈦礦化合物。By reducing the number of alkyl and cycloalkyl groups contained in formula (A4) and reducing the number of carbon atoms in the alkyl and cycloalkyl groups, a three-dimensional calcium-titanium compound with a higher luminescence intensity can be obtained.

於某個態樣中,於脒鎓離子中,較佳為R10 ~R13 所表示之烷基及環烷基中所含之碳原子之總數為1~4,進而較佳為R10 為碳原子數1之烷基,R11 ~R13 為氫原子。In one embodiment, in the amidinium ion, the total number of carbon atoms contained in the alkyl and cycloalkyl groups represented by R 10 to R 13 is preferably 1 to 4, and more preferably R 10 is an alkyl group having 1 carbon atom, and R 11 to R 13 are hydrogen atoms.

於鈣鈦礦化合物中,A為銫離子、碳原子數3以下之有機銨離子或碳原子數3以下之脒鎓離子之情形時,通常鈣鈦礦化合物具有三維結構。In calcium-titanium compounds, when A is a cesium ion, an organic ammonium ion having 3 or less carbon atoms, or an amidinium ion having 3 or less carbon atoms, the calcium-titanium compound generally has a three-dimensional structure.

於鈣鈦礦化合物中,A為碳原子數4以上之有機銨離子或碳原子數4以上之脒鎓離子之情形時,鈣鈦礦化合物具有二維結構及準二維(quasi-2D)結構之任一者或兩者。於該情形時,鈣鈦礦化合物可於結晶之一部分或整體中具有二維結構或準二維結構。 若二維之鈣鈦礦型晶體結構積層複數個,則等同於三維之鈣鈦礦型晶體結構(參考文獻:P. PBoix等人,J. Phys. Chem. Lett. 2015, 6, 898-907等)。In the case where A is an organic ammonium ion with 4 or more carbon atoms or an amidinium ion with 4 or more carbon atoms, the calcite compound has either or both of a two-dimensional structure and a quasi-2D structure. In this case, the calcite compound may have a two-dimensional structure or a quasi-2D structure in a part or the whole of the crystal. If a two-dimensional calcite crystal structure is stacked multiple times, it is equivalent to a three-dimensional calcite crystal structure (reference: P. PBoix et al., J. Phys. Chem. Lett. 2015, 6, 898-907, etc.).

於某個態樣中,鈣鈦礦化合物中之A較佳為銫離子或脒鎓離子,更佳為脒鎓離子。In one embodiment, A in the calcium-titanium compound is preferably a cesium ion or an amidinium ion, and more preferably an amidinium ion.

於(1)鈣鈦礦化合物中,可僅使用一種A,亦可併用兩種以上。In (1) the calcium-titanium compound, only one type of A may be used, or two or more types may be used in combination.

(構成成分B) 構成鈣鈦礦化合物之B可為選自由1價金屬離子、2價金屬離子及3價金屬離子所組成之群中之一種以上之金屬離子。於某個態樣中,B較佳為含有2價金屬離子,更佳為含有選自由鉛離子、錫離子、銻離子、鉍離子及銦離子所組成之群中之一種以上之金屬離子,進而較佳為鉛離子或錫離子,尤佳為鉛離子。(Component B) B constituting the calcium-titanium compound may be one or more metal ions selected from the group consisting of monovalent metal ions, divalent metal ions, and trivalent metal ions. In a certain embodiment, B preferably contains divalent metal ions, more preferably contains one or more metal ions selected from the group consisting of lead ions, tin ions, antimony ions, bismuth ions, and indium ions, further preferably is lead ions or tin ions, and particularly preferably is lead ions.

於(1)鈣鈦礦化合物中,可僅使用一種B,亦可併用兩種以上。In (1) the calcium-titanium compound, only one type of B may be used, or two or more types may be used in combination.

(構成成分X) 構成鈣鈦礦化合物之X可為選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子。(Component X) X constituting the calcium-titanium compound may be at least one anion selected from the group consisting of halide ions and thiocyanate ions.

作為鹵化物離子,可列舉:氯化物離子、溴化物離子、氟化物離子、碘化物離子。X較佳為溴化物離子。Examples of the halide ion include chloride ion, bromide ion, fluoride ion, and iodide ion. X is preferably a bromide ion.

於(1)鈣鈦礦化合物中,可僅使用一種X,亦可併用兩種以上。In (1) the calcium-titanium compound, only one type of X may be used, or two or more types may be used in combination.

於X含有兩種以上之鹵化物離子之情形時,鹵化物離子之含有比率可根據發光波長而適宜選擇。例如,可為溴化物離子與氯化物離子之組合、或溴化物離子與碘化物離子之組合。When X contains two or more halogenide ions, the content ratio of the halogenide ions can be appropriately selected according to the emission wavelength. For example, it can be a combination of bromide ions and chloride ions, or a combination of bromide ions and iodide ions.

X可根據所期望之發光波長而適宜選擇。X can be appropriately selected according to the desired luminescence wavelength.

於某個態樣中,X為溴化物離子之鈣鈦礦化合物可發出於通常為480 nm以上,較佳為500 nm以上,更佳為520 nm以上之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為溴化物離子之鈣鈦礦化合物可發出於480、490、500、510、520、530、540、550、560、570、580、590、600、610、620、630、640、650、660、670、680、690 nm以上之波長範圍內具有強度極大波峰之螢光。In one embodiment, the calcium-titanium compound in which X is a bromide ion can emit fluorescence with a peak intensity at a wavelength range of usually 480 nm or more, preferably 500 nm or more, and more preferably 520 nm or more. In other embodiments, the calcium-titanium compound in which X is a bromide ion can emit fluorescence with a peak intensity at a wavelength range of 480, 490, 500, 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610, 620, 630, 640, 650, 660, 670, 680, 690 nm or more.

於某個態樣中,X為溴化物離子之鈣鈦礦化合物可發出於通常為700 nm以下,較佳為600 nm以下,更佳為580 nm以下之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為溴化物離子之鈣鈦礦化合物可發出於700、690、680、670、660、650、640、630、620、600、590、580、570、560、550、540、530、520、510 nm以下之波長範圍內具有強度極大波峰之螢光。 上述波長範圍之上限值及下限值可任意組合。In one embodiment, the calcium-titanium compound in which X is a bromide ion can emit fluorescence with a peak intensity in a wavelength range of generally 700 nm or less, preferably 600 nm or less, and more preferably 580 nm or less. In other embodiments, the calcium-titanium compound in which X is a bromide ion can emit fluorescence with a peak intensity in a wavelength range of 700, 690, 680, 670, 660, 650, 640, 630, 620, 600, 590, 580, 570, 560, 550, 540, 530, 520, 510 nm or less. The upper and lower limits of the above wavelength ranges can be arbitrarily combined.

於某個態樣中,於鈣鈦礦化合物中之X為溴化物離子之情形時,發出之螢光之波峰通常為480~700 nm,較佳為500~600 nm,更佳為520~580 nm。In one embodiment, when X in the calcium-titanium compound is a bromide ion, the peak wavelength of the emitted fluorescence is generally 480-700 nm, preferably 500-600 nm, and more preferably 520-580 nm.

於某個態樣中,X為碘化物離子之鈣鈦礦化合物可發出於通常為520 nm以上,較佳為530 nm以上,更佳為540 nm以上之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為碘化物離子之鈣鈦礦化合物可發出於520、530、540、550、560、570、580、590、600、610、620、630、640、650、660、670、680、690、700、710、720、730、740、750、760、770、780、790 nm以上之波長範圍內具有強度極大波峰之螢光。In one embodiment, the calcium-titanium compound in which X is an iodide ion can emit fluorescence with a peak intensity at a wavelength range of usually 520 nm or more, preferably 530 nm or more, and more preferably 540 nm or more. In other embodiments, the calcium-titanium compound in which X is an iodide ion can emit fluorescence with a peak intensity at a wavelength range of 520, 530, 540, 550, 560, 570, 580, 590, 600, 610, 620, 630, 640, 650, 660, 670, 680, 690, 700, 710, 720, 730, 740, 750, 760, 770, 780, 790 nm or more.

於某個態樣中,X為碘化物離子之鈣鈦礦化合物可發出於通常為800 nm以下,較佳為750 nm以下,更佳為730 nm以下之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為碘化物離子之鈣鈦礦化合物可發出於800、790、780、770、760、750、740、730、720、710、700、690、680、670、660、650、640、630、620、600、590、580、570、560、550、540 nm以下之波長範圍內具有強度極大波峰之螢光。 上述波長範圍之上限值及下限值可任意組合。In one embodiment, the calcium-titanium compound in which X is an iodide ion can emit fluorescence with a peak intensity in a wavelength range of generally below 800 nm, preferably below 750 nm, and more preferably below 730 nm. In other embodiments, the calcium-titanium compound in which X is an iodide ion can emit fluorescence with a peak intensity in a wavelength range of below 800, 790, 780, 770, 760, 750, 740, 730, 720, 710, 700, 690, 680, 670, 660, 650, 640, 630, 620, 600, 590, 580, 570, 560, 550, 540 nm. The upper and lower limits of the above wavelength ranges can be combined arbitrarily.

於某個態樣中,於鈣鈦礦化合物中之X為碘化物離子之情形時,發出之螢光之波峰通常為520~800 nm,較佳為530~750 nm,更佳為540~730 nm。In one embodiment, when X in the calcium-titanium compound is an iodide ion, the peak wavelength of the emitted fluorescence is generally 520-800 nm, preferably 530-750 nm, and more preferably 540-730 nm.

於某個態樣中,X為氯化物離子之鈣鈦礦化合物可發出於通常為300 nm以上,較佳為310 nm以上,更佳為330 nm以上之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為氯化物離子之鈣鈦礦化合物可發出於300、310、320、330、340、350、360、370、380、390、400、410、420、430、440、450、460、470、480、490、500、510、520、530、540、550、560、570、580、590 nm以上之波長範圍內具有強度極大波峰之螢光。In a certain embodiment, the calcium-titanium compound in which X is a chloride ion can emit fluorescence having an extremely high intensity peak in a wavelength range of usually above 300 nm, preferably above 310 nm, and more preferably above 330 nm. In other aspects, the calcium-titanium compound in which X is a chloride ion can emit fluorescence having an extremely high intensity peak in a wavelength range above 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500, 510, 520, 530, 540, 550, 560, 570, 580, 590 nm.

於某個態樣中,X為氯化物離子之鈣鈦礦化合物可發出於通常為600 nm以下,較佳為580 nm以下,更佳為550 nm以下之波長範圍內具有強度極大波峰之螢光。 於其他態樣中,X為氯化物離子之鈣鈦礦化合物可發出於600、590、580、570、560、550、540、530、520、510、500、490、480、470、460、450、440、430、420、410、400、390、380、370、360、350、340、330、320、310 nm以下之波長範圍內具有強度極大波峰之螢光。 上述波長範圍之上限值及下限值可任意組合。In a certain embodiment, the calcium-titanium compound in which X is a chloride ion can emit fluorescence having an extremely high intensity peak in a wavelength range generally below 600 nm, preferably below 580 nm, and more preferably below 550 nm. In other aspects, the calcium-titanium compound in which X is a chloride ion can emit fluorescence having a peak with extremely high intensity in a wavelength range below 600, 590, 580, 570, 560, 550, 540, 530, 520, 510, 500, 490, 480, 470, 460, 450, 440, 430, 420, 410, 400, 390, 380, 370, 360, 350, 340, 330, 320, 310 nm. The upper and lower limits of the above wavelength range can be arbitrarily combined.

於某個態樣中,於鈣鈦礦化合物中之X為氯化物離子之情形時,發出之螢光之波峰通常為300~600 nm,較佳為310~580 nm,更佳為330~550 nm。In one embodiment, when X in the calcium-titanium compound is a chloride ion, the peak wavelength of the emitted fluorescence is generally 300-600 nm, preferably 310-580 nm, and more preferably 330-550 nm.

(三維結構之鈣鈦礦化合物之例示) 作為ABX(3+δ) 所表示之三維結構之鈣鈦礦化合物之較佳例,可列舉:CH3 NH3 PbBr3 、CH3 NH3 PbCl3 、CH3 NH3 PbI3 、CH3 NH3 PbBr(3-y) Iy (0<y<3)、CH3 NH3 PbBr(3-y) Cly (0<y<3)、(H2 N=CH-NH2 )PbBr3 、(H2 N=CH-NH2 )PbCl3 、(H2 N=CH-NH2 )PbI3 ,但並不限定於該等。(Examples of three-dimensional structured calcium titanite compounds) Preferred examples of three-dimensional structured calcium titanite compounds represented by ABX (3+δ) include CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr (3-y) I y (0<y<3), CH 3 NH 3 PbBr (3-y) Cl y (0<y<3), (H 2 N=CH-NH 2 )PbBr 3 , (H 2 N=CH-NH 2 )PbCl 3 , and (H 2 N=CH-NH 2 )PbI 3 , but the present invention is not limited thereto.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CH3 NH3 Pb(1-a) Caa Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Sra Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Laa Br(3+δ) (0<a≦0.7,0<δ≦0.7)、CH3 NH3 Pb(1-a) Baa Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Dya Br(3+δ) (0<a≦0.7,0<δ≦0.7),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: CH 3 NH 3 Pb (1-a) Ca a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Sr a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) La a Br (3+δ) (0<a≦0.7, 0<δ≦0.7), CH 3 NH 3 Pb (1-a) Ba a Br 3 (0<a≦0.7), and CH 3 NH 3 Pb (1-a) Dy a Br (3+δ) (0<a≦0.7, 0<δ≦0.7), but the present invention is not limited to these.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CH3 NH3 Pb(1-a) Naa Br(3+δ) (0<a≦0.7,-0.7≦δ<0)、CH3 NH3 Pb(1-a) Lia Br(3+δ) (0<a≦0.7,-0.7≦δ<0),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: CH 3 NH 3 Pb (1-a) Na a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), CH 3 NH 3 Pb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), but the present invention is not limited thereto.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CsPb(1-a) Naa Br(3+δ) (0<a≦0.7,-0.7≦δ<0)、CsPb(1-a) Lia Br(3+δ) (0<a≦0.7,-0.7≦δ<0),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: CsPb (1-a) Na a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), CsPb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), but the present invention is not limited to these.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CH3 NH3 Pb(1-a) Naa Br(3+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<3)、CH3 NH3 Pb(1-a) Lia Br(3+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<3)、CH3 NH3 Pb(1-a) Naa Br(3+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<3)、CH3 NH3 Pb(1-a) Lia Br(3+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<3),但並不限定於該等。As good examples of three-dimensional calcium-titanium compounds, we can also cite: CH 3 NH 3 Pb (1-a) Na a Br (3+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Li a Br (3+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Na a Br (3+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Li a Br (3+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<3), but not limited thereto.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:(H2 N=CH-NH2 )Pb(1-a) Naa Br(3+δ) (0<a≦0.7,-0.7≦δ<0)、(H2 N=CH-NH2 )Pb(1-a) Lia Br(3+δ) (0<a≦0.7,-0.7≦δ<0)、(H2 N=CH-NH2 )Pb(1-a) Naa Br(3+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<3)、(H2 N=CH-NH2 )Pb(1-a) Naa Br(3+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<3),但並不限定於該等。As good examples of three-dimensional calcium-titanium compounds, we can also cite: (H 2 N=CH-NH 2 )Pb (1-a) Na a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), (H 2 N=CH-NH 2 )Pb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), (H 2 N=CH-NH 2 )Pb (1-a) Na a Br (3+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), (H 2 N=CH-NH 2 )Pb (1-a) Na a Br (3+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<3), but not limited thereto.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CsPbBr3 、CsPbCl3 、CsPbI3 、CsPbBr(3-y) Iy (0<y<3)、CsPbBr(3-y) Cly (0<y<3),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include, but are not limited to, CsPbBr 3 , CsPbCl 3 , CsPbI 3 , CsPbBr (3-y) I y (0<y<3), and CsPbBr (3-y) Cl y (0<y<3).

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CH3 NH3 Pb(1-a) Zna Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Ala Br(3+δ) (0<a≦0.7,0≦δ≦0.7)、CH3 NH3 Pb(1-a) Coa Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Mna Br3 (0<a≦0.7)、CH3 NH3 Pb(1-a) Mga Br3 (0<a≦0.7),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: CH 3 NH 3 Pb (1-a) Zn a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Al a Br (3+δ) (0<a≦0.7, 0≦δ≦0.7), CH 3 NH 3 Pb (1-a) Co a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Mn a Br 3 (0<a≦0.7), and CH 3 NH 3 Pb (1-a) Mg a Br 3 (0<a≦0.7), but the present invention is not limited to these.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CsPb(1-a) Zna Br3 (0<a≦0.7)、CsPb(1-a) Ala Br(3+δ) (0<a≦0.7,0<δ≦0.7)、CsPb(1-a) Coa Br3 (0<a≦0.7)、CsPb(1-a) Mna Br3 (0<a≦0.7)、CsPb(1-a) Mga Br3 (0<a≦0.7),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: CsPb (1-a) Zn a Br 3 (0<a≦0.7), CsPb (1-a) Al a Br (3+δ) (0<a≦0.7, 0<δ≦0.7), CsPb (1-a) Co a Br 3 (0<a≦0.7), CsPb (1-a) Mn a Br 3 (0<a≦0.7), and CsPb (1-a) Mg a Br 3 (0<a≦0.7), but the present invention is not limited to these.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:CH3 NH3 Pb(1-a) Zna Br(3-y) Iy (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Ala Br(3+δ-y) Iy (0<a≦0.7,0<δ≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Coa Br(3-y) Iy (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Mna Br(3-y) Iy (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Mga Br(3-y) Iy (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Zna Br(3-y) Cly (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Ala Br(3+δ-y) Cly (0<a≦0.7,0<δ≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Coa Br(3+δ-y) Cly (0<a≦0.7,0<δ≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Mna Br(3-y) Cly (0<a≦0.7,0<y<3)、CH3 NH3 Pb(1-a) Mga Br(3-y) Cly (0<a≦0.7,0<y<3),但並不限定於該等。As preferred examples of three-dimensional calcium-titanium compounds, there are: CH 3 NH 3 Pb (1-a) Zn a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Al a Br (3+δ-y) I y (0<a≦0.7, 0<δ≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Co a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Mn a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Mg a Br (3-y) I y y<3)、CH 3 NH 3 Pb (1-a) Zn a Br (3-y) Cl y (0<a ≦ 0.7, 0<y<3)、CH 3 NH 3 Pb (1-a) Al a Br (3+δ-y) Cl y (0<a ≦ 0.7, 0<δ ≦ 0.7, 0<y<3)、CH 3 NH 3 Pb (1-a) Co a Br (3+δ-y) Cl y (0<a ≦ 0.7, 0<δ ≦ 0.7, 0<y<3)、CH 3 NH 3 Pb (1-a) Mn a Br (3-y) Cl y (0<a ≦ 0.7, 0<y<3)、CH 3 NH 3 Pb (1-a) Mg a Br (3-y) Cl y (0<a≦0.7, 0<y<3), but is not limited thereto.

作為三維結構之鈣鈦礦化合物之較佳例,亦可列舉:(H2 N=CH-NH2 )Zna Br3 (0<a≦0.7)、(H2 N=CH-NH2 )Mga Br3 (0<a≦0.7)、(H2 N=CH-NH2 )Pb(1-a) Zna Br(3-y) Iy (0<a≦0.7,0<y<3)、(H2 N=CH-NH2 )Pb(1-a) Zna Br(3-y) Cly (0<a≦0.7,0<y<3),但並不限定於該等。Preferred examples of three-dimensional calcium-titanium compounds include: ( H2N =CH- NH2 )Zn a Br 3 (0<a≦0.7), ( H2N =CH- NH2 )Mg a Br 3 (0<a≦0.7), ( H2N =CH- NH2 )Pb (1-a) Zn a Br (3-y) I y (0<a≦0.7, 0<y<3), and ( H2N =CH- NH2 )Pb (1-a) Zn a Br (3-y) Cl y (0<a≦0.7, 0<y<3), but the present invention is not limited to these.

上述三維結構之鈣鈦礦化合物之中,更佳為CsPbBr3 、CsPbBr(3-y) Iy (0<y<3)、(H2 N=CH-NH2 )PbBr3 ,進而較佳為(H2 N=CH-NH2 )PbBr3Among the three-dimensional calcium-titanium compounds, CsPbBr 3 , CsPbBr (3-y) I y (0<y<3), (H 2 N=CH-NH 2 )PbBr 3 are more preferred, and (H 2 N=CH-NH 2 )PbBr 3 is even more preferred.

(二維結構之鈣鈦礦化合物之例示) 作為二維結構之鈣鈦礦化合物之較佳例,可列舉:(C4 H9 NH3 )2 PbBr4 、(C4 H9 NH3 )2 PbCl4 、(C4 H9 NH3 )2 PbI4 、(C7 H15 NH3 )2 PbBr4 、(C7 H15 NH3 )2 PbCl4 、(C7 H15 NH3 )2 PbI4 、(C4 H9 NH3 )2 Pb(1-a) Lia Br(4+δ) (0<a≦0.7,-0.7≦δ<0)、(C4 H9 NH3 )2 Pb(1-a) Naa Br(4+δ) (0<a≦0.7,-0.7≦δ<0)、(C4 H9 NH3 )2 Pb(1-a) Rba Br(4+δ) (0<a≦0.7,-0.7≦δ<0),但並不限定於該等。(Examples of two-dimensional calcium-titanium compounds) Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 PbBr 4 , (C 4 H 9 NH 3 ) 2 PbCl 4 , (C 4 H 9 NH 3 ) 2 PbI 4 , (C 7 H 15 NH 3 ) 2 PbBr 4 , (C 7 H 15 NH 3 ) 2 PbCl 4 , (C 7 H 15 NH 3 ) 2 PbI 4 , (C 4 H 9 NH 3 ) 2 Pb (1-a) Li a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 4 H 9 NH 3 ) 2 Pb (1-a) Na a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 4 H 9 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), but the present invention is not limited thereto.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C7 H15 NH3 )2 Pb(1-a) Naa Br(4+δ) (0<a≦0.7,-0.7≦δ<0)、(C7 H15 NH3 )2 Pb(1-a) Lia Br(4+δ) (0<a≦0.7,-0.7≦δ<0)、(C7 H15 NH3 )2 Pb(1-a) Rba Br(4+δ) (0<a≦0.7,-0.7≦δ<0),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 7 H 15 NH 3 ) 2 Pb (1-a) Na a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 7 H 15 NH 3 ) 2 Pb (1-a) Li a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), and (C 7 H 15 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 Pb(1-a) Naa Br(4+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Lia Br(4+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Rba Br(4+δ-y) Iy (0<a≦0.7,-0.7≦δ<0,0<y<4),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 Pb (1-a) Na a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Li a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), and (C 4 H 9 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 Pb(1-a) Naa Br(4+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Lia Br(4+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Rba Br(4+δ-y) Cly (0<a≦0.7,-0.7≦δ<0,0<y<4),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 Pb (1-a) Na a Br (4+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Li a Br (4+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), and (C 4 H 9 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 PbBr4 、(C7 H15 NH3 )2 PbBr4 ,但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include (C 4 H 9 NH 3 ) 2 PbBr 4 and (C 7 H 15 NH 3 ) 2 PbBr 4 , but the present invention is not limited thereto.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 PbBr(4-y) Cly (0<y<4)、(C4 H9 NH3 )2 PbBr(4-y) Iy (0<y<4),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include (C 4 H 9 NH 3 ) 2 PbBr (4-y) Cl y (0<y<4) and (C 4 H 9 NH 3 ) 2 PbBr (4-y) I y (0<y<4), but the present invention is not limited thereto.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 Pb(1-a) Zna Br4 (0<a≦0.7)、(C4 H9 NH3 )2 Pb(1-a) Mga Br4 (0<a≦0.7)、(C4 H9 NH3 )2 Pb(1-a) Coa Br4 (0<a≦0.7)、(C4 H9 NH3 )2 Pb(1-a) Mna Br4 (0<a≦0.7),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br 4 (0<a≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br 4 (0<a≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br 4 (0<a≦0.7), and (C 4 H 9 NH 3 ) 2 Pb (1-a) Mn a Br 4 (0<a≦0.7), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C7 H15 NH3 )2 Pb(1-a) Zna Br4 (0<a≦0.7)、(C7 H15 NH3 )2 Pb(1-a) Mga Br4 (0<a≦0.7)、(C7 H15 NH3 )2 Pb(1-a) Coa Br4 (0<a≦0.7)、(C7 H15 NH3 )2 Pb(1-a) Mna Br4 (0<a≦0.7),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 7 H 15 NH 3 ) 2 Pb (1-a) Zn a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb (1-a) Mg a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb (1-a) Co a Br 4 (0<a≦0.7), and (C 7 H 15 NH 3 ) 2 Pb (1-a) Mn a Br 4 (0<a≦0.7), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 Pb(1-a) Zna Br(4-y) Iy (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Mga Br(4-y) Iy (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Coa Br(4-y) Iy (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Mna Br(4-y) Iy (0<a≦0.7,0<y<4),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br (4-y) I y (0<a≦0.7, 0<y<4), and (C 4 H 9 NH 3 ) 2 Pb (1-a) Mn a Br (4-y) I y (0<a≦0.7, 0<y<4), but the present invention is not limited to these.

作為二維結構之鈣鈦礦化合物之較佳例,亦可列舉:(C4 H9 NH3 )2 Pb(1-a) Zna Br(4-y) Cly (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Mga Br(4-y) Cly (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Coa Br(4-y) Cly (0<a≦0.7,0<y<4)、(C4 H9 NH3 )2 Pb(1-a) Mna Br(4-y) Cly (0<a≦0.7,0<y<4),但並不限定於該等。Preferred examples of two-dimensional calcium-titanium compounds include: (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br (4-y) Cl y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br (4-y) Cl y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br (4-y) Cl y (0<a≦0.7, 0<y<4), and (C 4 H 9 NH 3 ) 2 Pb (1-a) Mn a Br (4-y) Cl y (0<a≦0.7, 0<y<4), but the present invention is not limited to these.

<(1)鈣鈦礦化合物之粒徑> (1)鈣鈦礦化合物之平均粒徑較佳為13.5 nm以上80.0 nm以下。 於某個態樣中,就於分散液中(1)鈣鈦礦化合物可穩定分散之觀點而言,(1)鈣鈦礦化合物之平均粒徑較佳為15.0 nm以上,更佳為17.0 nm以上,進而較佳為18.0 nm以上。於其他態樣中,就獲得發光強度較高之(1)鈣鈦礦化合物之觀點而言,(1)鈣鈦礦化合物之平均粒徑較佳為80.0 nm以下,更佳為25.0 nm以下,進而較佳為22.0 nm以下。 於其他態樣中,鈣鈦礦化合物之平均粒徑為10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29、30、31、32、33、34、35、36、37、38、39、40、41、42、43、44、45、46、47、48、49、50、51、52、53、54、55、56、57、58、59、60、61、62、63、64、65、66、67、68、69、70、71、72、73、74、75、76、77、78、79 nm以上。 於其他態樣中,鈣鈦礦化合物之平均粒徑為85、84、83、82、81、80、79、78、77、76、75、74、73、72、71、70、69、68、67、66、65、64、63、62、61、60、59、58、57、56、55、54、53、52、51、50、49、48、47、46、45、44、43、42、41、40、39、38、37、36、35、34、33、32、31、30、29、28、27、26、25、24、23、22、21、20、19、18、17、16、15、14、13 nm以下。<(1) Particle size of calcium-titanium compound> The average particle size of the (1) calcium-titanium compound is preferably 13.5 nm or more and 80.0 nm or less. In one embodiment, from the viewpoint that the (1) calcium-titanium compound can be stably dispersed in the dispersion, the average particle size of the (1) calcium-titanium compound is preferably 15.0 nm or more, more preferably 17.0 nm or more, and further preferably 18.0 nm or more. In other embodiments, from the viewpoint of obtaining a (1) calcium-titanium compound with a higher luminescence intensity, the average particle size of the (1) calcium-titanium compound is preferably 80.0 nm or less, more preferably 25.0 nm or less, and further preferably 22.0 nm or less. In other embodiments, the average particle size of the calcium-titanium compound is 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79 nm or more. In other aspects, the average particle size of the calcium-titanium compound is 85, 84, 83, 82, 81, 80, 79, 78, 77, 76, 75, 74, 73, 72, 71, 70, 69, 68, 67, 66, 65, 64, 63, 62, 61, 60, 59, 58, 57, 56, 55, 54, 53, 52, 51, 50, 49, 48, 47, 46, 45, 44, 43, 42, 41, 40, 39, 38, 37, 36, 35, 34, 33, 32, 31, 30, 29, 28, 27, 26, 25, 24, 23, 22, 21, 20, 19, 18, 17, 16, 15, 14, 13 nm or less.

於本說明書中,(1)鈣鈦礦化合物之平均粒徑例如可藉由穿透式電子顯微鏡(以下,亦稱為TEM)或掃描式電子顯微鏡(以下,亦稱為SEM)進行測定。具體而言,藉由TEM或SEM,測定隨機選擇之30個以上之(1)鈣鈦礦化合物之形成立方體或長方體形狀之粒子之最長邊之長度,計算測定值之算術平均值,藉此可求出平均粒徑。In this specification, the average particle size of (1) calcium-titanium compound can be measured, for example, by transmission electron microscope (hereinafter, also referred to as TEM) or scanning electron microscope (hereinafter, also referred to as SEM). Specifically, the length of the longest side of 30 or more randomly selected cubic or rectangular particles of (1) calcium-titanium compound is measured by TEM or SEM, and the arithmetic mean of the measured values is calculated to obtain the average particle size.

作為觀察本實施形態之(1)鈣鈦礦化合物之方法,例如可列舉:使用SEM或TEM等觀察含有(1)鈣鈦礦化合物之分散液組合物之方法。進而,可藉由使用有SEM或TEM之能量分散型X射線分析(EDX)測定,而解析詳細之元素分佈。就空間解析度較高之觀點而言,較佳為以TEM觀察之方法。As a method for observing the (1) calcium-titanium compound of the present embodiment, for example, there can be cited a method of observing a dispersion composition containing the (1) calcium-titanium compound using SEM or TEM. Furthermore, detailed element distribution can be analyzed by energy dispersive X-ray analysis (EDX) using SEM or TEM. From the perspective of higher spatial resolution, the method of observation using TEM is preferred.

作為以TEM觀察(1)鈣鈦礦化合物之方法,可列舉使用將含有(1)鈣鈦礦化合物之分散液組合物澆鑄於TEM專用之附有支持膜之柵上,使之自然乾燥而成者之方法。As a method for observing (1) calcium-titanium compound by TEM, there can be cited a method in which a dispersion composition containing (1) calcium-titanium compound is cast on a grid with a support film for TEM and then naturally dried.

作為解析(1)鈣鈦礦化合物之平均粒徑之方法,可列舉:將TEM圖像引入電腦,使用圖像解析軟體進行解析之方法。 首先,將上述TEM圖像引入電腦,使用圖像解析軟體進行二值化處理。獲得將(1)鈣鈦礦化合物作為黑色,其以外作為白色而轉換之二值化處理完畢之圖像。此時,與藉由TEM-EDX測定而獲得之元素映射圖像比較,確認檢測出源自(1)鈣鈦礦化合物之成分之部分轉換為黑色。於可見差異之情形時,對進行二值化處理之閾值進行調整。對上述二值化處理完畢之圖像,使用圖像解析軟體,測定(1)鈣鈦礦化合物之平均粒徑。圖像解析軟體可適宜選擇Image J或Photoshop等。As a method for analyzing the average particle size of (1) calcium-titanium compounds, there is a method of importing TEM images into a computer and using image analysis software for analysis. First, the above TEM images are imported into a computer and binarized using image analysis software. An image is obtained after the binarization process is completed, in which (1) calcium-titanium compounds are converted to black and the rest are converted to white. At this time, by comparing with the element mapping image obtained by TEM-EDX measurement, it is confirmed that the components derived from (1) calcium-titanium compounds are partially converted to black. When a difference is visible, the threshold for binarization is adjusted. For the above binarized image, use image analysis software to measure (1) the average particle size of the calcium-titanium compound. The image analysis software may be Image J or Photoshop.

於本實施形態之其他態樣中,(1)鈣鈦礦化合物係複數個上述具有鈣鈦礦晶體結構之化合物集合而成之鈣鈦礦集合體。上述鈣鈦礦集合體包含一種或兩種以上之具有鈣鈦礦晶體結構之化合物。因此,上述鈣鈦礦集合體包含一種或兩種以上之1價陽離子、金屬離子或陰離子。In other aspects of this embodiment, (1) the calcium-titanium compound is a calcium-titanium aggregate formed by a plurality of the above-mentioned compounds having a calcium-titanium crystal structure. The above-mentioned calcium-titanium aggregate includes one or more compounds having a calcium-titanium crystal structure. Therefore, the above-mentioned calcium-titanium aggregate includes one or more monovalent cations, metal ions or anions.

<組合物1> 本實施形態之組合物1含有上述(1)鈣鈦礦化合物以及選自由下述(2-1)、下述(2-1)之改質體、下述(2-2)及下述(2-2)之改質體所組成之群中之至少一個化合物。 (2-1)矽氮烷 (2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物<Composition 1> Composition 1 of this embodiment contains the above-mentioned (1) calcium-titanium compound and at least one compound selected from the group consisting of the following (2-1), the modified product of the following (2-1), the following (2-2), and the modified product of the following (2-2). (2-1) Silazane (2-2) A silicon compound having at least one group selected from the group consisting of an amino group, an alkoxy group, and an alkylthio group

於本說明書中,有時將選自由上述(2-1)、上述(2-1)之改質體、上述(2-2)及上述(2-2)之改質體所組成之群中之至少一個化合物統稱為「(2)表面保護劑」。In this specification, at least one compound selected from the group consisting of the above (2-1), the modified product of the above (2-1), the above (2-2), and the modified product of the above (2-2) is sometimes collectively referred to as "(2) surface protective agent".

於某個態樣中,較佳為本實施形態之組合物1含有上述(1)鈣鈦礦化合物以及選自由上述(2-1)及上述(2-1)之改質體所組成之群中之至少一個化合物。In one embodiment, the composition 1 of the present embodiment preferably contains the calcium-titanium compound (1) and at least one compound selected from the group consisting of the compound (2-1) and a modified form of the compound (2-1).

本實施形態之組合物1可進而含有選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種。 (3)溶劑 (4)聚合性化合物 (5)聚合物The composition 1 of this embodiment may further contain at least one selected from the group consisting of the following (3), the following (4) and the following (5). (3) Solvent (4) Polymerizable compound (5) Polymer

<組合物2> 本實施形態之組合物2含有上述(1)鈣鈦礦化合物以及選自由上述(3)、上述(4)及上述(5)所組成之群中之至少一種。<Composition 2> Composition 2 of this embodiment contains the calcium-titanium compound (1) and at least one selected from the group consisting of (3), (4) and (5).

於以下之說明中,有時將(3)溶劑、(4)聚合性化合物、(5)聚合物統稱為「分散介質」。於本實施形態之組合物1及組合物2中,(1)鈣鈦礦化合物可分散於該等分散介質中。In the following description, (3) solvent, (4) polymerizable compound, and (5) polymer are sometimes collectively referred to as "dispersion medium." In the compositions 1 and 2 of the present embodiment, (1) calcium-titanium compound can be dispersed in the dispersion medium.

於本說明書中所謂「分散」係指(1)鈣鈦礦化合物浮動於分散介質中之狀態、或(1)鈣鈦礦化合物懸浮於分散介質中之狀態。於(1)鈣鈦礦化合物分散於分散介質中之情形時,(1)鈣鈦礦化合物之一部分可沈澱。The term "dispersion" as used herein refers to a state in which (1) the calcium-titanium compound floats in a dispersion medium or a state in which (1) the calcium-titanium compound is suspended in a dispersion medium. In the case in which (1) the calcium-titanium compound is dispersed in a dispersion medium, a portion of (1) the calcium-titanium compound may precipitate.

本實施形態之組合物1及組合物2可進而含有下述(6)。再者,關於下述(6)之詳細內容,於下文敍述。 (6)表面修飾劑Composition 1 and Composition 2 of this embodiment may further contain the following (6). The details of the following (6) are described below. (6) Surface modifier

本實施形態之組合物1及組合物2可具有上述(1)~上述(6)以外之其他成分。例如,本實施形態之組合物可進而含有若干雜質、包含構成(1)鈣鈦礦化合物之元素之具有非晶形結構之化合物、聚合起始劑。The composition 1 and the composition 2 of this embodiment may contain other components besides the above (1) to (6). For example, the composition of this embodiment may further contain some impurities, a compound having an amorphous structure containing elements constituting the calcium-titanium compound (1), and a polymerization initiator.

以下,對本實施形態之組合物中所含之上述(2)~上述(6)進行說明。Hereinafter, the above (2) to (6) contained in the composition of this embodiment will be described.

<(2)表面保護劑> 本實施形態之組合物1含有選自由(2-1)矽氮烷、上述(2-1)之改質體、(2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物及上述(2-2)之改質體所組成之群中之至少一個化合物,作為(1)鈣鈦礦化合物之(2)表面保護劑。<(2) Surface Protectant> Composition 1 of the present embodiment contains at least one compound selected from the group consisting of (2-1) silazane, a modified form of (2-1), (2-2) a silicon compound having at least one group selected from the group consisting of an amino group, an alkoxy group and an alkylthio group, and a modified form of (2-2), as (2) a surface protectant for (1) a calcium-titanium compound.

本實施形態之組合物1藉由使(2)表面保護劑覆蓋於(1)鈣鈦礦化合物之表面,可獲得量子產率之提高、使發光波長實現短波長化之效果。The composition 1 of this embodiment can achieve the effect of improving the quantum yield and shortening the luminescent wavelength by coating the surface of the calcium-titanium compound (1) with the surface protective agent (2).

<(2-1)矽氮烷> (2-1)矽氮烷係具有Si-N-Si鍵之化合物。矽氮烷可為直鏈狀、支鏈狀或環狀之任一者。<(2-1) Silazane> (2-1) Silazane is a compound with Si-N-Si bonds. Silazane can be linear, branched, or cyclic.

矽氮烷可為低分子矽氮烷,亦可為高分子矽氮烷。於本說明書中,有時將高分子矽氮烷記載為聚矽氮烷。The silazane may be a low molecular weight silazane or a high molecular weight silazane. In this specification, the high molecular weight silazane is sometimes described as a polysilazane.

於本說明書中所謂「低分子」係指數量平均分子量未達600。 又,於本說明書中所謂「高分子」係指數量平均分子量為600以上20000以下。In this specification, "low molecular weight" refers to a number average molecular weight of less than 600. In addition, "high molecular weight" in this specification refers to a number average molecular weight of more than 600 and less than 20,000.

於本說明書中所謂「數量平均分子量」係指藉由凝膠滲透層析(GPC)法而測定之聚苯乙烯換算值。The "number average molecular weight" referred to in this specification refers to the polystyrene conversion value measured by gel permeation chromatography (GPC).

(2-1-1.低分子矽氮烷) 作為低分子矽氮烷,例如較佳為下述式(B1)所表示之二矽氮烷。(2-1-1. Low molecular weight silazane) As the low molecular weight silazane, for example, disilazane represented by the following formula (B1) is preferred.

[化2] [Chemistry 2]

式(B1)中,R14 及R15 分別獨立地表示氫原子、碳原子數1~20之烷基、碳原子數1~20之烯基、碳原子數3~20之環烷基、碳原子數6~20之芳基或碳原子數1~20之烷基矽烷基。In formula (B1), R 14 and R 15 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkylsilyl group having 1 to 20 carbon atoms.

R14 及R15 可具有胺基等取代基。存在複數個之R15 可相同,亦可不同。R 14 and R 15 may have a substituent such as an amino group. A plurality of R 15 may be the same or different.

作為式(B1)所表示之低分子矽氮烷,可列舉:1,3-二乙烯基-1,1,3,3-四甲基二矽氮烷、1,3-二苯基四甲基二矽氮烷及1,1,1,3,3,3-六甲基二矽氮烷,但並不限定於該等。Examples of the low molecular weight silazane represented by formula (B1) include, but are not limited to, 1,3-divinyl-1,1,3,3-tetramethyldisilazane, 1,3-diphenyltetramethyldisilazane, and 1,1,1,3,3,3-hexamethyldisilazane.

(2-1-2.低分子矽氮烷) 作為低分子矽氮烷,例如下述式(B2)所表示之低分子矽氮烷亦較佳。(2-1-2. Low molecular weight silazane) As the low molecular weight silazane, for example, the low molecular weight silazane represented by the following formula (B2) is also preferred.

[化3] [Chemistry 3]

式(B2)中,R14 及R15 與上述式(B1)中之R14 及R15 相同。In formula (B2), R 14 and R 15 are the same as R 14 and R 15 in the above formula (B1).

存在複數個之R14 可相同,亦可不同。 存在複數個之R15 可相同,亦可不同。A plurality of R 14s may be the same or different. A plurality of R 15s may be the same or different.

式(B2)中,n1 表示1以上20以下之整數。n1 可為1以上10以下之整數,亦可為1或2。In formula (B2), n1 represents an integer greater than or equal to 1 and less than or equal to 20. n1 may be an integer greater than or equal to 1 and less than or equal to 10, and may be 1 or 2.

作為式(B2)所表示之低分子矽氮烷,可列舉:八甲基環四矽氮烷、2,2,4,4,6,6-六甲基環三矽氮烷及2,4,6-三甲基-2,4,6-三乙烯基環三矽氮烷,但並不限定於該等。Examples of the low molecular weight silazane represented by formula (B2) include octamethylcyclotetrasilazane, 2,2,4,4,6,6-hexamethylcyclotrisilazane, and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane, but are not limited thereto.

於某個態樣中,作為低分子之矽氮烷,較佳為八甲基環四矽氮烷及1,3-二苯基四甲基二矽氮烷,更佳為八甲基環四矽氮烷。In one embodiment, the low molecular weight silazane is preferably octamethylcyclotetrasilazane and 1,3-diphenyltetramethyldisilazane, and more preferably octamethylcyclotetrasilazane.

(2-1-3.高分子矽氮烷) 作為高分子矽氮烷,例如較佳為下述式(B3)所表示之高分子矽氮烷(聚矽氮烷)。(2-1-3. Polymer silazane) As the polymer silazane, for example, a polymer silazane (polysilazane) represented by the following formula (B3) is preferred.

聚矽氮烷係具有Si-N-Si鍵之高分子化合物。式(B3)所表示之聚矽氮烷之結構單元可為一種,亦可為複數種。Polysilazane is a polymer compound having Si-N-Si bonds. The structural unit of the polysilazane represented by formula (B3) may be one or more.

[化4] [Chemistry 4]

式(B3)中,R14 及R15 與上述式(B1)中之R14 及R15 相同。In formula (B3), R 14 and R 15 are the same as R 14 and R 15 in the above formula (B1).

式(B3)中,*表示鍵結鍵。R14 鍵結於分子鏈末端之N原子之鍵結鍵上。 R15 鍵結於分子鏈末端之Si原子之鍵結鍵上。In formula (B3), * represents a bond. R 14 is bonded to the bond of the N atom at the end of the molecular chain. R 15 is bonded to the bond of the Si atom at the end of the molecular chain.

存在複數個之R14 可相同,亦可不同。 存在複數個之R15 可相同,亦可不同。A plurality of R 14s may be the same or different. A plurality of R 15s may be the same or different.

m表示2以上10000以下之整數。m represents an integer greater than 2 and less than 10000.

式(B3)所表示之聚矽氮烷例如可為R14 及R15 全部為氫原子之全氫聚矽氮烷。The polysilazane represented by formula (B3) may be, for example, a perhydropolysilazane in which both R 14 and R 15 are hydrogen atoms.

又,式(B3)所表示之聚矽氮烷例如可為至少一個R15 為氫原子以外之基之有機聚矽氮烷。可根據用途適宜選擇全氫聚矽氮烷與有機聚矽氮烷,亦可混合使用。The polysilazane represented by formula (B3) may be, for example, an organic polysilazane in which at least one R 15 is a group other than a hydrogen atom. Perhydropolysilazane and organic polysilazane may be appropriately selected according to the intended use, and may be used in combination.

於某個態樣中,就提高(1)之分散性,抑制凝集之效果提昇之觀點而言,本實施形態之組合物較佳為含有式(B3)所表示之有機聚矽氮烷。In one aspect, from the viewpoint of improving the dispersibility of (1) and enhancing the effect of suppressing aggregation, the composition of this embodiment preferably contains an organic polysilazane represented by formula (B3).

作為式(B3)所表示之有機聚矽氮烷,可為R14 及R15 之至少一個為碳原子數1~20之烷基、碳原子數1~20之烯基、碳原子數3~20之環烷基、碳原子數6~20之芳基或碳原子數1~20之烷基矽烷基之有機聚矽氮烷。The organic polysilazane represented by formula (B3) may be an organic polysilazane in which at least one of R14 and R15 is an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkylsilyl group having 1 to 20 carbon atoms.

於某個態樣中,有機聚矽氮烷之中,較佳為由式(B3)表示,R14 及R15 之至少一個為甲基之有機聚矽氮烷。In one embodiment, among the organic polysilazane, an organic polysilazane represented by formula (B3) in which at least one of R 14 and R 15 is a methyl group is preferred.

(2-1-4.高分子矽氮烷) 作為高分子矽氮烷,例如具有下述式(B4)所表示之結構之聚矽氮烷亦較佳。(2-1-4. Polymer silazane) As the polymer silazane, for example, polysilazane having a structure represented by the following formula (B4) is also preferred.

聚矽氮烷可於分子內之一部分具有環結構,例如可具有式(B4)所表示之結構。The polysilazane may have a ring structure at a part of the molecule, for example, it may have a structure represented by formula (B4).

[化5] [Chemistry 5]

式(B4)中,*表示鍵結鍵。 式(B4)之鍵結鍵可與式(B3)所表示之聚矽氮烷之鍵結鍵、或式(B3)所表示之聚矽氮烷之結構單元之鍵結鍵鍵結。In formula (B4), * represents a bond. The bond of formula (B4) can be bonded to a bond of the polysilazane represented by formula (B3) or a bond of a structural unit of the polysilazane represented by formula (B3).

又,於聚矽氮烷於分子內含有複數個式(B4)所表示之結構之情形時,式(B4)所表示之結構之鍵結鍵可與其他之式(B4)所表示之結構之鍵結鍵直接鍵結。Furthermore, when the polysilazane contains a plurality of structures represented by the formula (B4) in the molecule, a bond of the structure represented by the formula (B4) may directly bond with a bond of another structure represented by the formula (B4).

R14 鍵結於未與式(B3)所表示之聚矽氮烷之鍵結鍵、式(B3)所表示之聚矽氮烷之結構單元之鍵結鍵、及其他之式(B4)所表示之結構之鍵結鍵之任一者鍵結之N原子之鍵結鍵上。R 14 is bonded to a bond of a N atom that is not bonded to any of a bond of the polysilazane represented by the formula (B3), a bond of a structural unit of the polysilazane represented by the formula (B3), and a bond of another structure represented by the formula (B4).

R15 鍵結於未與式(B3)所表示之聚矽氮烷之鍵結鍵、式(B3)所表示之聚矽氮烷之結構單元之鍵結鍵、及其他之式(B4)所表示之結構之鍵結鍵之任一者鍵結之Si原子之鍵結鍵上。R 15 is bonded to a bond of a Si atom that is not bonded to any of a bond of the polysilazane represented by the formula (B3), a bond of a structural unit of the polysilazane represented by the formula (B3), and a bond of another structure represented by the formula (B4).

於某個態樣中,n2 表示1以上10000以下之整數。n2 可為1以上10以下之整數,亦可為1或2。In a certain aspect, n 2 represents an integer greater than 1 and less than 10000. n 2 may be an integer greater than 1 and less than 10, and may be 1 or 2.

就提高(1)之分散性,抑制凝集之效果提昇之觀點而言,本實施形態之組合物較佳為含有具有式(B4)所表示之結構之有機聚矽氮烷。From the viewpoint of improving the dispersibility of (1) and enhancing the effect of suppressing aggregation, the composition of this embodiment preferably contains an organic polysilazane having a structure represented by formula (B4).

作為具有式(B4)所表示之結構之有機聚矽氮烷,可為至少一個鍵結鍵與R14 或R15 鍵結,該R14 及R15 之至少一個為碳原子數1~20之烷基、碳原子數1~20之烯基、碳原子數3~20之環烷基、碳原子數6~20之芳基或碳原子數1~20之烷基矽烷基之有機聚矽氮烷。The organic polysilazane having a structure represented by formula (B4) may be an organic polysilazane having at least one bond bonded to R14 or R15 , wherein at least one of R14 and R15 is an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkylsilanyl group having 1 to 20 carbon atoms.

其中,較佳為含有式(B4)所表示之結構,至少一個鍵結鍵與R14 或R15 鍵結,該R14 及R15 之至少一個為甲基之聚矽氮烷。Among them, preferred is a polysilazane having a structure represented by formula (B4), at least one of which is bonded to R 14 or R 15 , and at least one of R 14 and R 15 is a methyl group.

通常之聚矽氮烷例如具有存在直鏈結構與6員環或8員環等環結構之結構,即上述式(B3)、上述式(B4)所表示之結構。通常之聚矽氮烷之分子量以數量平均分子量(Mn)計為600~2000左右(聚苯乙烯換算),根據分子量可為液體或固體之物質。Typical polysilazane has a structure having a linear structure and a 6-membered ring or an 8-membered ring, for example, that is, a structure represented by the above formula (B3) or the above formula (B4). The molecular weight of a typical polysilazane is about 600 to 2000 (polystyrene conversion) in terms of number average molecular weight (Mn), and it can be a liquid or solid substance depending on the molecular weight.

聚矽氮烷可使用市售品,作為市售品,可列舉:NN120-10、NN120-20、NAX120-20、NN110、NAX120、NAX110、NL120A、NL110A、NL150A、NP110、NP140(AZ ELECTRONIC MATERIALS股份有限公司製造)以及AZNN-120-20、Durazane(註冊商標)1500 Slow Cure、Durazane1500 Rapid Cure、Durazane1800及Durazane1033(Merck Performance Materials股份有限公司製造)等,但並不限定於該等。As the polysilazane, commercially available products may be used. Examples of the commercially available products include NN120-10, NN120-20, NAX120-20, NN110, NAX120, NAX110, NL120A, NL110A, NL150A, NP110, and NP140 (manufactured by AZ ELECTRONIC MATERIALS Co., Ltd.), AZNN-120-20, Durazane (registered trademark) 1500 Slow Cure, Durazane 1500 Rapid Cure, Durazane 1800, and Durazane 1033 (manufactured by Merck Performance Materials Co., Ltd.), but the present invention is not limited to these.

於某個態樣中,聚矽氮烷較佳為AZNN-120-20、Durazane1500 Slow Cure、Durazane1500 Rapid Cure,更佳為Durazane1500 Slow Cure。In one embodiment, the polysilazane is preferably AZNN-120-20, Durazane 1500 Slow Cure, Durazane 1500 Rapid Cure, and more preferably Durazane 1500 Slow Cure.

<(2-1)矽氮烷之改質體> 於本說明書中所謂「改質」係指具有Si-N鍵、Si-SR鍵(R為氫原子或有機基)或Si-OR鍵(R為氫原子或有機基)之矽化合物水解,生成具有Si-O-Si鍵之矽化合物。Si-O-Si鍵可藉由分子間之縮合反應而生成,亦可藉由分子內之縮合反應而生成。<(2-1) Modified silazane> In this specification, "modification" means hydrolysis of silicon compounds having Si-N bonds, Si-SR bonds (R is a hydrogen atom or an organic group) or Si-OR bonds (R is a hydrogen atom or an organic group) to generate silicon compounds having Si-O-Si bonds. Si-O-Si bonds can be generated by intermolecular condensation reactions or by intramolecular condensation reactions.

於本說明書中所謂「改質體」係指藉由將具有Si-N鍵、Si-SR鍵或Si-OR鍵之矽化合物改質而獲得之化合物。The term "modified product" used in this specification refers to a compound obtained by modifying a silicon compound having a Si-N bond, a Si-SR bond, or a Si-OR bond.

作為(2-1)之改質體,較佳為上述式(B1)所表示之二矽氮烷之改質體、上述式(B2)所表示之低分子矽氮烷之改質體、上述式(B3)所表示之聚矽氮烷之改質體、於分子內具有上述式(B4)所表示之結構之聚矽氮烷之改質體。Preferred as the modified product of (2-1) are modified products of disilazane represented by the above formula (B1), modified products of low molecular weight silazane represented by the above formula (B2), modified products of polysilazane represented by the above formula (B3), and modified products of polysilazane having the structure represented by the above formula (B4) in the molecule.

於某個態樣中,關於式(B2)所表示之低分子矽氮烷之改質體,相對於式(B2)所表示之低分子矽氮烷之改質體中所含之全部矽原子,未與氮原子鍵結之矽原子之比率較佳為0.1~100%。又,於其他態樣中,未與氮原子鍵結之矽原子之比率更佳為10~98%,進而較佳為30~95%。In one embodiment, with respect to the modified low molecular weight silazane represented by formula (B2), the ratio of silicon atoms not bonded to nitrogen atoms relative to all silicon atoms contained in the modified low molecular weight silazane represented by formula (B2) is preferably 0.1 to 100%. In another embodiment, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably 10 to 98%, and further preferably 30 to 95%.

再者,「未與氮原子鍵結之矽原子之比率」係使用下述測定值,根據((Si(莫耳))―(Si-N鍵中之N(莫耳)))/Si(莫耳)×100而求得。若考慮改質反應,則所謂「未與氮原子鍵結之矽原子之比率」係指「於改質處理中產生之矽氧烷鍵中所含之矽原子之比率」。The "ratio of silicon atoms not bonded to nitrogen atoms" is obtained using the following measured value, ((Si (mole)) - (N (mole) in Si-N bond))/Si (mole) × 100. If the modification reaction is taken into account, the so-called "ratio of silicon atoms not bonded to nitrogen atoms" refers to the "ratio of silicon atoms contained in siloxane bonds generated during the modification process".

於某個態樣中,關於式(B3)所表示之聚矽氮烷之改質體,相對於式(B3)所表示之聚矽氮烷之改質體中所含之全部矽原子,未與氮原子鍵結之矽原子之比率較佳為0.1~100%。又,於其他態樣中,未與氮原子鍵結之矽原子之比率更佳為10~98%,進而較佳為30~95%。In one embodiment, with respect to the modified polysilazane represented by formula (B3), the ratio of silicon atoms not bonded to nitrogen atoms relative to all silicon atoms contained in the modified polysilazane represented by formula (B3) is preferably 0.1 to 100%. In another embodiment, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably 10 to 98%, and further preferably 30 to 95%.

於某個態樣中,關於具有式(B4)所表示之結構之聚矽氮烷之改質體,相對於具有式(B4)所表示之結構之聚矽氮烷之改質體中所含之全部矽原子,未與氮原子鍵結之矽原子之比率較佳為0.1~99%。又,於其他態樣中,未與氮原子鍵結之矽原子之比率更佳為10~97%,進而較佳為30~95%。In one embodiment, with respect to the modified polysilazane having a structure represented by formula (B4), the ratio of silicon atoms not bonded to nitrogen atoms relative to all silicon atoms contained in the modified polysilazane having a structure represented by formula (B4) is preferably 0.1 to 99%. In another embodiment, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably 10 to 97%, and further preferably 30 to 95%.

改質體中之Si原子數、Si-N鍵之數可藉由X射線光電子光譜法(XPS)而測定。The number of Si atoms and Si-N bonds in the modified body can be determined by X-ray photoelectron spectroscopy (XPS).

於某個態樣中,關於改質體,使用藉由上述方法測定之測定值而求得之相對於全部矽原子之「未與氮原子鍵結之矽原子之比率」較佳為0.1~99%,更佳為10~99%,進而較佳為30~95%。In one embodiment, regarding the modified body, the “ratio of silicon atoms not bonded to nitrogen atoms” relative to all silicon atoms obtained using the measured value measured by the above method is preferably 0.1 to 99%, more preferably 10 to 99%, and even more preferably 30 to 95%.

<(2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物> 本實施形態之組合物1可含有(2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物。以下,有時將(2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物統稱為「(2-2)矽化合物」。<(2-2) Silicon compound having at least one group selected from the group consisting of amine groups, alkoxy groups and alkylthio groups> Composition 1 of the present embodiment may contain (2-2) silicon compound having at least one group selected from the group consisting of amine groups, alkoxy groups and alkylthio groups. Hereinafter, (2-2) silicon compound having at least one group selected from the group consisting of amine groups, alkoxy groups and alkylthio groups is sometimes collectively referred to as "(2-2) silicon compound".

作為(2-2)矽化合物,可列舉:3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、十二烷基三甲氧基矽烷、三甲氧基苯基矽烷、1H,1H,2H,2H-全氟辛基三乙氧基矽烷、三甲氧基(1H,1H,2H,2H-九氟己基)矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基三乙氧基矽烷作為例,但並不限定於該等。Examples of the (2-2) silicon compound include, but are not limited to, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, dodecyltrimethoxysilane, trimethoxyphenylsilane, 1H,1H,2H,2H-perfluorooctyltriethoxysilane, trimethoxy(1H,1H,2H,2H-nonafluorohexyl)silane, 3-butylpropyltrimethoxysilane, and 3-butylpropyltriethoxysilane.

於某個態樣中,矽化合物之中,就(1)之耐久性之觀點而言,較佳為3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、三甲氧基苯基矽烷,更佳為三甲氧基苯基矽烷。In one embodiment, among the silicon compounds, from the viewpoint of durability of (1), 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, and trimethoxyphenylsilane are preferred, and trimethoxyphenylsilane is more preferred.

<(2-2)矽化合物之改質體> (2-2)矽化合物之改質體係藉由將上述(2-2)矽化合物改質而獲得之化合物。關於「改質」,與(2-1)矽氮烷之改質體中之說明相同。<(2-2) Modified silicon compound> (2-2) Modified silicon compound is a compound obtained by modifying the above-mentioned (2-2) silicon compound. The "modification" is the same as that in (2-1) Modified silazane.

於本實施形態之組合物1中,上述可僅具有一種(2)表面保護劑,亦可併用兩種以上。In the composition 1 of this embodiment, the above-mentioned (2) surface protecting agent may be present at least one type, or two or more types may be used in combination.

<(6)表面修飾劑> 本實施形態之(1)鈣鈦礦化合物之表面可藉由表面修飾劑層而覆蓋。表面修飾劑層可位於(1)鈣鈦礦化合物與(2)表面保護劑之間。<(6) Surface modifier> The surface of the (1) calcium-titanium compound of this embodiment can be covered by a surface modifier layer. The surface modifier layer can be located between the (1) calcium-titanium compound and the (2) surface protective agent.

再者,所謂表面修飾劑層覆蓋(1)鈣鈦礦化合物之「表面」除了指表面修飾劑層直接相接於(1)鈣鈦礦化合物而覆蓋外,亦包含如下含義:表面修飾劑層直接相接於形成於(1)鈣鈦礦化合物之表面之其他層之表面而形成,並不直接相接於(1)鈣鈦礦化合物之表面而覆蓋。Furthermore, the so-called surface modifier layer covering the "surface" of (1) the calcium-titanium compound not only means that the surface modifier layer is directly in contact with the (1) calcium-titanium compound and covers it, but also includes the following meanings: the surface modifier layer is directly in contact with the surface of other layers formed on the surface of (1) the calcium-titanium compound and does not directly contact with the surface of (1) the calcium-titanium compound and covers it.

<表面修飾劑層> 表面修飾劑層係以選自由銨離子、胺、一級~四級銨陽離子、銨鹽、羧酸、羧酸根離子及羧酸鹽所組成之群中之至少一種離子或化合物作為形成材料。<Surface modifier layer> The surface modifier layer is formed of at least one ion or compound selected from the group consisting of ammonium ions, amines, primary to quaternary ammonium cations, ammonium salts, carboxylic acids, carboxylate ions, and carboxylate salts.

其中,表面修飾劑層較佳為以選自由胺及羧酸所組成之群中之至少一種作為形成材料。 以下,有時將表面修飾劑層之形成材料稱為「(6)表面修飾劑」。Among them, the surface modifier layer is preferably formed of at least one selected from the group consisting of amines and carboxylic acids. Hereinafter, the material forming the surface modifier layer is sometimes referred to as "(6) surface modifier".

表面修飾劑係於藉由下述製造方法製造本實施形態之組合物時,覆蓋(1)鈣鈦礦化合物之表面,具有使(1)鈣鈦礦化合物於組合物中穩定分散之作用之化合物。The surface modifier is a compound that covers the surface of (1) the calcium-titanium compound when the composition of the present embodiment is produced by the following production method and has the function of stably dispersing the (1) calcium-titanium compound in the composition.

<銨離子、一級~四級銨陽離子、銨鹽> 作為(6)表面修飾劑之銨離子及一級~四級銨陽離子係由下述式(A1)表示。作為(6)表面修飾劑之銨鹽係含有下述式(A1)所表示之離子之鹽。<Ammonium ions, primary to quaternary ammonium cations, and ammonium salts> Ammonium ions and primary to quaternary ammonium cations as (6) surface modifiers are represented by the following formula (A1). Ammonium salts as (6) surface modifiers are salts containing ions represented by the following formula (A1).

[化6] [Chemistry 6]

於式(A1)所表示之離子中,R1 ~R4 表示氫原子或1價烴基。In the ion represented by formula (A1), R 1 to R 4 represent a hydrogen atom or a monovalent hydrocarbon group.

R1 ~R4 所表示之烴基可為飽和烴基,亦可為不飽和烴基。作為飽和烴基,可列舉:烷基或環烷基。The alkyl group represented by R 1 to R 4 may be a saturated alkyl group or an unsaturated alkyl group. Examples of the saturated alkyl group include an alkyl group and a cycloalkyl group.

R1 ~R4 所表示之烷基可為直鏈狀,亦可為支鏈狀。 於某個態樣中,R1 ~R4 所表示之烷基之碳原子數通常為1~20,較佳為5~20,更佳為8~20。The alkyl group represented by R 1 to R 4 may be linear or branched. In one embodiment, the alkyl group represented by R 1 to R 4 generally has 1 to 20 carbon atoms, preferably 5 to 20, and more preferably 8 to 20 carbon atoms.

於某個態樣中,環烷基之碳原子數通常為3~30,較佳為3~20,更佳為3~11。碳原子數包含取代基之碳原子數。In a certain aspect, the number of carbon atoms in the cycloalkyl group is generally 3 to 30, preferably 3 to 20, and more preferably 3 to 11. The number of carbon atoms includes the number of carbon atoms in the substituent.

R1 ~R4 之不飽和烴基可為直鏈狀,亦可為支鏈狀。The unsaturated hydrocarbon groups of R 1 to R 4 may be in the form of a straight chain or a branched chain.

於某個態樣中,R1 ~R4 之不飽和烴基之碳原子數通常為2~20,較佳為5~20,更佳為8~20。In a certain aspect, the unsaturated alkyl group of R 1 to R 4 generally has 2 to 20 carbon atoms, preferably 5 to 20, and more preferably 8 to 20 carbon atoms.

於某個態樣中,R1 ~R4 分別獨立地較佳為氫原子、烷基或不飽和烴基。 於某個態樣中,作為不飽和烴基,較佳為烯基。於某個態樣中,R1 ~R4 分別獨立地較佳為碳原子數8~20之烯基。In one embodiment, R 1 to R 4 are each independently preferably a hydrogen atom, an alkyl group or an unsaturated hydrocarbon group. In one embodiment, the unsaturated hydrocarbon group is preferably an alkenyl group. In one embodiment, R 1 to R 4 are each independently preferably an alkenyl group having 8 to 20 carbon atoms.

作為R1 ~R4 之烷基之具體例,可列舉:R6 ~R9 中例示之烷基。Specific examples of the alkyl group for R 1 to R 4 include the alkyl groups exemplified for R 6 to R 9 .

作為R1 ~R4 之環烷基之具體例,可列舉:R6 ~R9 中例示之環烷基。Specific examples of the cycloalkyl group for R 1 to R 4 include the cycloalkyl groups exemplified for R 6 to R 9 .

作為R1 ~R4 之烯基,可例示:於R6 ~R9 中例示之上述直鏈狀或支鏈狀之烷基中,任一個碳原子間之單鍵(C-C)被取代為雙鍵(C=C)者,雙鍵之位置並無限定。Examples of the alkenyl group for R 1 to R 4 include those in which a single bond (CC) between any carbon atoms in the linear or branched alkyl groups exemplified above for R 6 to R 9 is replaced by a double bond (C=C). The position of the double bond is not limited.

於某個態樣中,作為R1 ~R4 之烯基之較佳者,例如可列舉:乙烯基、丙烯基、3-丁烯基、2-丁烯基、2-戊烯基、2-己烯基、2-壬烯基、2-十二碳烯基、9-十八碳烯基,但並不限定於該等。In one embodiment, preferred alkenyl groups for R 1 to R 4 include, but are not limited to, ethenyl, propenyl, 3-butenyl, 2-butenyl, 2-pentenyl, 2-hexenyl, 2-nonenyl, 2-dodecenyl, and 9-octadecenyl.

於式(A1)所表示之銨陽離子形成鹽之情形時,作為抗衡陰離子,並無特別限制。作為抗衡陰離子,較佳為鹵化物離子或羧酸根離子等。作為鹵化物離子,可列舉:溴化物離子、氯化物離子、碘化物離子、氟化物離子。When the ammonium cation represented by formula (A1) forms a salt, there is no particular limitation on the counter anion. Preferred counter anions are halogenide ions or carboxylate ions. Examples of halogenide ions include bromide ions, chloride ions, iodide ions, and fluoride ions.

作為具有式(A1)所表示之銨陽離子與抗衡陰離子之銨鹽,可列舉正辛基銨鹽、油基銨鹽作為較佳例。As the ammonium salt having an ammonium cation and a counter anion represented by the formula (A1), n-octyl ammonium salt and oleyl ammonium salt can be cited as preferable examples.

<胺> 至於作為表面修飾劑之胺,可由下述式(A11)表示。<Amine> Amines used as surface modifiers can be represented by the following formula (A11).

[化7] [Chemistry 7]

於上述式(A11)中,R1 ~R3 表示與上述式(A1)所具有之R1 ~R3 相同之基。其中,R1 ~R3 中至少一個為1價烴基。In the above formula (A11), R 1 to R 3 represent the same groups as R 1 to R 3 in the above formula (A1). At least one of R 1 to R 3 is a monovalent hydrocarbon group.

於某個態樣中,至於作為表面修飾劑之胺,可為一級~三級胺之任一者,較佳為一級胺及二級胺,更佳為一級胺。In a certain aspect, the amine used as the surface modifying agent may be any of primary to tertiary amines, preferably primary amines and secondary amines, and more preferably primary amines.

於某個態樣中,至於作為表面修飾劑之胺,較佳為油胺。In one aspect, the amine used as the surface modifying agent is preferably oleylamine.

<羧酸、羧酸根離子、羧酸鹽> 作為表面修飾劑之羧酸根離子係由下述式(A2)表示。作為表面修飾劑之羧酸鹽係含有下述式(A2)所表示之離子之鹽。 R5 -CO2 - ・・・(A2)<Carboxylic acid, carboxylate ion, carboxylate salt> The carboxylate ion as a surface modifying agent is represented by the following formula (A2). The carboxylate salt as a surface modifying agent is a salt containing an ion represented by the following formula (A2). R 5 -CO 2 -... (A2)

作為表面修飾劑之羧酸係於上述(A2)所表示之羧酸根陰離子上鍵結質子(H+ )而成之羧酸,但並不限定於該等。The carboxylic acid used as the surface modifying agent is a carboxylic acid formed by bonding a proton (H + ) to the carboxylate anion represented by (A2) above, but is not limited thereto.

於式(A2)所表示之離子中,R5 表示一價烴基。R5 所表示之烴基可為飽和烴基,亦可為不飽和烴基。作為飽和烴基,可列舉:烷基或環烷基,但並不限定於該等。In the ion represented by formula (A2), R 5 represents a monovalent hydrocarbon group. The hydrocarbon group represented by R 5 may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. Examples of the saturated hydrocarbon group include, but are not limited to, an alkyl group or a cycloalkyl group.

R5 所表示之烷基可為直鏈狀,亦可為支鏈狀。The alkyl group represented by R 5 may be a linear or branched chain.

於某個態樣中,R5 所表示之烷基之碳原子數通常為1~20,較佳為5~20,更佳為8~20。In a certain aspect, the alkyl group represented by R 5 generally has 1 to 20 carbon atoms, preferably 5 to 20, and more preferably 8 to 20 carbon atoms.

環烷基之碳原子數通常為3~30,較佳為3~20,更佳為3~11。碳原子數亦包含取代基之碳原子數。The number of carbon atoms in the cycloalkyl group is usually 3 to 30, preferably 3 to 20, and more preferably 3 to 11. The number of carbon atoms also includes the number of carbon atoms in the substituent.

R5 所表示之不飽和烴基可為直鏈狀,亦可為支鏈狀。The unsaturated hydrocarbon group represented by R 5 may be in the form of a straight chain or a branched chain.

於某個態樣中,R5 所表示之不飽和烴基之碳原子數通常為2~20,較佳為5~20,更佳為8~20。In a certain aspect, the unsaturated alkyl group represented by R 5 generally has 2 to 20 carbon atoms, preferably 5 to 20, and more preferably 8 to 20 carbon atoms.

R5 較佳為烷基或不飽和烴基。作為不飽和烴基,較佳為烯基。 R5 is preferably an alkyl group or an unsaturated hydrocarbon group. As the unsaturated hydrocarbon group, an alkenyl group is preferred.

作為R5 之烷基之具體例,可列舉:R6 ~R9 中例示之烷基。 作為R5 之環烷基之具體例,可列舉:R6 ~R9 中例示之環烷基。Specific examples of the alkyl group for R 5 include the alkyl groups exemplified for R 6 to R 9. Specific examples of the cycloalkyl group for R 5 include the cycloalkyl groups exemplified for R 6 to R 9 .

作為R5 之烯基之具體例,可列舉:R1 ~R4 中例示之烯基。Specific examples of the alkenyl group for R 5 include the alkenyl groups exemplified for R 1 to R 4 .

於某個態樣中,式(A2)所表示之羧酸根陰離子較佳為油酸根陰離子。In one embodiment, the carboxylate anion represented by formula (A2) is preferably an oleate anion.

於羧酸根陰離子形成鹽之情形時,作為抗衡陽離子,並無特別限制,可列舉鹼金屬陽離子、鹼土金屬陽離子、銨陽離子等作為較佳例。When the carboxylate anion forms a salt, the counter cation is not particularly limited, and alkali metal cations, alkaline earth metal cations, ammonium cations, etc. can be cited as preferred examples.

至於作為表面修飾劑之羧酸,較佳為油酸。As for the carboxylic acid used as the surface modifying agent, oleic acid is preferred.

上述表面修飾劑之中,較佳為銨鹽、銨離子、一級~四級銨陽離子、羧酸鹽、羧酸根離子。Among the above-mentioned surface modifying agents, ammonium salts, ammonium ions, primary to quaternary ammonium cations, carboxylate salts, and carboxylate ions are preferred.

銨鹽、銨離子之中,更佳為油胺鹽、油基銨離子。Among the ammonium salts and ammonium ions, oleylamine salts and oleylammonium ions are more preferred.

羧酸鹽、羧酸根離子之中,更佳為油酸鹽、油酸根陰離子。Among the carboxylate salts and carboxylate ions, oleate salts and oleate anions are more preferred.

於本實施形態之組合物1及組合物2中,可僅具有一種上述(6)表面修飾劑,亦可併用兩種以上。In the composition 1 and the composition 2 of this embodiment, only one kind of the above-mentioned (6) surface modifier may be present, or two or more kinds may be used in combination.

<(3)溶劑> 本實施形態之組合物所具有之溶劑只要為可使本實施形態之(1)鈣鈦礦化合物分散之介質,則並無特別限定。本實施形態之組合物所具有之溶劑較佳為難以溶解本實施形態之(1)鈣鈦礦化合物者。 於本說明書中所謂「溶劑」係指於一個大氣壓、25℃下為液體狀態之物質。其中,溶劑中不包含下述聚合性化合物。<(3) Solvent> The solvent contained in the composition of this embodiment is not particularly limited as long as it is a medium that can disperse the (1) calcium-titanium compound of this embodiment. The solvent contained in the composition of this embodiment is preferably a medium that is difficult to dissolve the (1) calcium-titanium compound of this embodiment. The "solvent" in this specification refers to a substance that is in a liquid state at one atmosphere and 25°C. The solvent does not include the following polymerizable compounds.

作為溶劑,可列舉下述(a)~(k),但並不限定於該等。 (a)酯 (b)酮 (c)醚 (d)醇 (e)二醇醚 (f)具有醯胺基之有機溶劑 (g)具有腈基之有機溶劑 (h)具有碳酸酯基之有機溶劑 (i)鹵代烴 (j)烴 (k)二甲基亞碸As the solvent, the following (a) to (k) can be listed, but it is not limited to them. (a) Ester (b) Ketone (c) Ether (d) Alcohol (e) Glycol ether (f) Organic solvent having an amide group (g) Organic solvent having a nitrile group (h) Organic solvent having a carbonate group (i) Halogenated hydrocarbon (j) Hydrocarbon (k) Dimethyl sulfoxide

作為(a)酯,例如可列舉:甲酸甲酯、甲酸乙酯、甲酸丙酯、甲酸戊酯、乙酸甲酯、乙酸乙酯、乙酸戊酯等,但並不限定於該等。Examples of the (a) ester include methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, pentyl acetate, and the like, but the ester is not limited thereto.

作為(b)酮,可列舉:γ-丁內酯、N-甲基-2-吡咯啶酮、丙酮、二異丁酮、環戊酮、環己酮、甲基環己酮等,但並不限定於該等。Examples of the ketone (b) include, but are not limited to, γ-butyrolactone, N-methyl-2-pyrrolidone, acetone, diisobutyl ketone, cyclopentanone, cyclohexanone, methylcyclohexanone, and the like.

作為(c)醚,可列舉:二乙醚、甲基第三丁醚、二異丙醚、二甲氧基甲烷、二甲氧基乙烷、1,4-二㗁烷、1,3-二氧雜環戊烷、4-甲基二氧雜環戊烷、四氫呋喃、甲基四氫呋喃、大茴香醚、苯乙醚等,但並不限定於該等。Examples of the ether (c) include diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1,4-dioxane, 1,3-dioxacyclopentane, 4-methyldioxacyclopentane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole, but are not limited thereto.

作為(d)醇,可列舉:甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、第三丁醇、1-戊醇、2-甲基-2-丁醇、甲氧基丙醇、二丙酮醇、環己醇、2-氟乙醇、2,2,2-三氟乙醇、2,2,3,3-四氟-1-丙醇等,但並不限定於該等。(d) Alcohols include, but are not limited to, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2,2-trifluoroethanol, and 2,2,3,3-tetrafluoro-1-propanol.

作為(e)二醇醚,可列舉:乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、乙二醇單乙醚乙酸酯、三乙二醇二甲醚等,但並不限定於該等。(e) Glycol ethers include, but are not limited to, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, triethylene glycol dimethyl ether, and the like.

作為(f)具有醯胺基之有機溶劑,可列舉:N,N-二甲基甲醯胺、乙醯胺、N,N-二甲基乙醯胺等,但並不限定於該等。(f) Examples of the organic solvent having an amide group include, but are not limited to, N,N-dimethylformamide, acetamide, and N,N-dimethylacetamide.

作為(g)具有腈基之有機溶劑,可列舉:乙腈、異丁腈、丙腈、甲氧基乙腈等,但並不限定於該等。(g) Examples of the organic solvent having a nitrile group include, but are not limited to, acetonitrile, isobutyronitrile, propionitrile, methoxyacetonitrile and the like.

作為(h)具有碳酸酯基之有機溶劑,可列舉:碳酸乙二酯、碳酸丙二酯等,但並不限定於該等。(h) Examples of the organic solvent having a carbonate group include ethylene carbonate, propylene carbonate, and the like, but the present invention is not limited thereto.

作為(i)鹵代烴,可列舉:二氯甲烷、氯仿等,但並不限定於該等。(i) The halogenated hydrocarbon includes, but is not limited to, dichloromethane, chloroform, and the like.

作為(j)烴,可列舉:正戊烷、環己烷、正己烷、1-十八碳烯、苯、甲苯、二甲苯等,但並不限定於該等。Examples of the (j) hydrocarbon include, but are not limited to, n-pentane, cyclohexane, n-hexane, 1-octadecene, benzene, toluene, and xylene.

於某個態樣中,該等溶劑之中,認為(a)酯、(b)酮、(c)醚、(g)具有腈基之有機溶劑、(h)具有碳酸酯基之有機溶劑、(i)鹵代烴及(j)烴之極性低,難以溶解本實施形態之(1)鈣鈦礦化合物,故而較佳。In one embodiment, among the above solvents, (a) esters, (b) ketones, (c) ethers, (g) organic solvents having a nitrile group, (h) organic solvents having a carbonate group, (i) halogenated hydrocarbons, and (j) hydrocarbons are considered to be preferred because they have low polarity and are difficult to dissolve the (1) calcium-titanium compound of the present embodiment.

進而,作為本實施形態之組合物中所使用之溶劑,更佳為(i)鹵代烴、(j)烴。Furthermore, the solvent used in the composition of this embodiment is more preferably (i) a halogenated hydrocarbon or (j) a hydrocarbon.

於本實施形態之組合物1及組合物2中,可僅使用一種上述溶劑,亦可併用兩種以上。In the composition 1 and the composition 2 of the present embodiment, only one of the above solvents may be used, or two or more of them may be used in combination.

<(4)聚合性化合物> 本實施形態之組合物所具有之聚合性化合物較佳為於製造本實施形態之組合物之溫度下,難以溶解本實施形態之(1)鈣鈦礦化合物者。<(4) Polymerizable compound> The polymerizable compound of the composition of this embodiment is preferably one that is difficult to dissolve the (1) calcium-titanium compound of this embodiment at the temperature at which the composition of this embodiment is prepared.

於本說明書中所謂「聚合性化合物」係指具有聚合性基之單體化合物(單體)。例如,聚合性化合物可列舉於一個大氣壓、25℃下為液體狀態之單體。In this specification, the term "polymerizable compound" refers to a monomer compound (monomer) having a polymerizable group. For example, a polymerizable compound can be a monomer that is in a liquid state at 1 atmospheric pressure and 25°C.

例如於常溫、常壓下製造之情形時,作為聚合性化合物,並無特別限制。作為聚合性化合物,例如可列舉:苯乙烯、丙烯酸酯、甲基丙烯酸酯、丙烯腈等公知之聚合性化合物。其中,作為聚合性化合物,較佳為作為丙烯酸系樹脂之單體之丙烯酸酯及甲基丙烯酸酯之任一者或兩者。For example, when the polymerizable compound is produced at room temperature and pressure, there is no particular limitation. Examples of the polymerizable compound include well-known polymerizable compounds such as styrene, acrylate, methacrylate, and acrylonitrile. Among them, the polymerizable compound is preferably one or both of acrylate and methacrylate, which are monomers of acrylic resins.

於本實施形態之組合物1及組合物2中,可僅使用一種聚合性化合物,亦可併用兩種以上。In the composition 1 and the composition 2 of the present embodiment, only one kind of polymerizable compound may be used, or two or more kinds may be used in combination.

於本實施形態之組合物中,丙烯酸酯及甲基丙烯酸酯之總量相對於全部之(4)聚合性化合物之比率可為10 mol%以上。同比率可為30 mol%以上,亦可為50 mol%以上,亦可為80 mol%以上,亦可為100 mol%。In the composition of this embodiment, the total amount of acrylate and methacrylate relative to the total amount of (4) polymerizable compounds may be 10 mol% or more. The ratio may be 30 mol% or more, 50 mol% or more, 80 mol% or more, or 100 mol%.

<(5)聚合物> 本實施形態之組合物中所含之聚合物較佳為於製造本實施形態之組合物之溫度下,本實施形態之(1)鈣鈦礦化合物之溶解度較低之聚合物。<(5) Polymer> The polymer contained in the composition of this embodiment is preferably a polymer having a lower solubility of the (1) calcium-titanium compound of this embodiment at the temperature at which the composition of this embodiment is prepared.

例如於常溫、常壓下製造之情形時,作為聚合物,並無特別限制,例如可列舉:聚苯乙烯、丙烯酸系樹脂、環氧樹脂等公知之聚合物,但並不限定於該等。其中,作為聚合物,較佳為丙烯酸系樹脂。丙烯酸系樹脂含有源自丙烯酸酯之結構單元及源自甲基丙烯酸酯之結構單元之任一者或兩者。For example, when the polymer is produced at room temperature and pressure, there is no particular limitation on the polymer, and examples thereof include, but are not limited to, known polymers such as polystyrene, acrylic resins, and epoxy resins. Among them, acrylic resins are preferred as the polymer. Acrylic resins contain either or both of structural units derived from acrylates and structural units derived from methacrylates.

於本實施形態之組合物中,源自丙烯酸酯之結構單元及源自甲基丙烯酸酯之結構單元之總量相對於(5)聚合物中所含之全部結構單元之比率可為10 mol%以上。同比率可為30 mol%以上,亦可為50 mol%以上,亦可為80 mol%以上,亦可為100 mol%。In the composition of this embodiment, the total amount of the structural units derived from acrylate and the structural units derived from methacrylate relative to all the structural units contained in the (5) polymer may be 10 mol% or more. The ratio may be 30 mol% or more, 50 mol% or more, 80 mol% or more, or 100 mol%.

(5)聚合物之重量平均分子量較佳為100~1200000,更佳為1000~800000,進而較佳為5000~150000。(5) The weight average molecular weight of the polymer is preferably 100 to 1,200,000, more preferably 1,000 to 800,000, and even more preferably 5,000 to 150,000.

於本說明書中所謂「重量平均分子量」係指藉由凝膠滲透層析(GPC)法而測定之聚苯乙烯換算值。The "weight average molecular weight" referred to in this specification refers to the polystyrene conversion value measured by gel permeation chromatography (GPC).

於本實施形態之組合物1及組合物2中,可僅具有一種上述(5)聚合物,亦可併用兩種以上。In the composition 1 and the composition 2 of this embodiment, only one kind of the above-mentioned polymer (5) may be contained, or two or more kinds may be used in combination.

<組合物中之各成分之含量> 於本實施形態之組合物1及組合物2中,(1)鈣鈦礦化合物相對於組合物之總質量之含有比率並無特別限定。<Content of each component in the composition> In the composition 1 and the composition 2 of the present embodiment, (1) the content ratio of the calcium-titanium compound relative to the total mass of the composition is not particularly limited.

於某個態樣中,作為上述含有比率,就防止濃度淬滅之觀點而言,較佳為90質量%以下,更佳為40質量%以下,進而較佳為10質量%以下,尤佳為3質量%以下。In a certain aspect, the content ratio is preferably 90 mass % or less, more preferably 40 mass % or less, further preferably 10 mass % or less, and particularly preferably 3 mass % or less from the viewpoint of preventing concentration quenching.

又,於其他態樣中,作為上述含有比率,就獲得良好之量子產率之觀點而言,較佳為0.0002質量%以上,更佳為0.002質量%以上,進而較佳為0.01質量%以上。In other aspects, the content ratio is preferably 0.0002 mass % or more, more preferably 0.002 mass % or more, and further preferably 0.01 mass % or more from the viewpoint of obtaining a good quantum yield.

上述上限值及下限值可任意組合。The above upper limit values and lower limit values may be combined arbitrarily.

(1)鈣鈦礦化合物相對於組合物之總質量之含有比率通常為0.0002~90質量%。(1) The content ratio of the calcium-titanium compound relative to the total mass of the composition is generally 0.0002 to 90 mass %.

於某個態樣中,(1)鈣鈦礦化合物相對於組合物之總質量之含有比率較佳為0.001~40質量%,更佳為0.002~10質量%,進而較佳為0.01~3質量%。 於某個態樣中,(1)鈣鈦礦化合物之含有比率為0.0002、0.0005、0.001、0.002、0.005、0.01、0.05、0.1、0.5、1、10、20、30、40、50、60、70、80質量%以上。 於其他態樣中,(1)鈣鈦礦化合物之含有比率為90、80、70、60、50、40、30、20、10、1、0.5、0.1、0.05、0.01、0.005、0.002、0.001、0.0005質量%以下。In a certain embodiment, the content ratio of (1) the calcium-titanium compound relative to the total mass of the composition is preferably 0.001 to 40 mass%, more preferably 0.002 to 10 mass%, and further preferably 0.01 to 3 mass%. In a certain embodiment, the content ratio of (1) the calcium-titanium compound is 0.0002, 0.0005, 0.001, 0.002, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 10, 20, 30, 40, 50, 60, 70, 80 mass% or more. In other aspects, (1) the content ratio of the calcium-titanium compound is 90, 80, 70, 60, 50, 40, 30, 20, 10, 1, 0.5, 0.1, 0.05, 0.01, 0.005, 0.002, 0.001, 0.0005 mass % or less.

(1)鈣鈦礦化合物相對於組合物之總質量之含有比率為上述範圍內之組合物於不易產生(1)鈣鈦礦化合物之凝集,亦良好地發揮發光性之方面而言較佳。A composition in which the content ratio of the (1) calcium-titanium compound to the total mass of the composition is within the above range is preferable in that the (1) calcium-titanium compound is less likely to aggregate and that the luminescence property is well exhibited.

於本實施形態之組合物1中,(2)表面保護劑相對於組合物之總質量之含有比率並無特別限定。In the composition 1 of this embodiment, the content ratio of (2) the surface protecting agent relative to the total mass of the composition is not particularly limited.

於某個態樣中,作為上述含有比率,就提高(1)鈣鈦礦化合物之分散性之觀點及提高耐久性之觀點而言,較佳為30質量%以下,更佳為10質量%以下,進而較佳為7.5質量%以下。In one embodiment, the content ratio is preferably 30% by mass or less, more preferably 10% by mass or less, and further preferably 7.5% by mass or less, from the viewpoint of improving (1) the dispersibility of the calcium-titanium compound and improving durability.

又,於某個態樣中,作為上述含有比率,就提高耐久性之觀點而言,較佳為0.001質量%以上,更佳為0.01質量%以上,進而較佳為0.1質量%以上。 於其他態樣中,上述含有比率為0.001、0.005、0.01、0.05、0.1、0.5、1、5、7.5、10、15、20、25質量%以上。於其他態樣中,上述含有比率為30、25、20、15、10、7.5、5、1、0.5、0.1、0.05質量%以下。In addition, in a certain embodiment, the above content ratio is preferably 0.001 mass % or more, more preferably 0.01 mass % or more, and further preferably 0.1 mass % or more from the viewpoint of improving durability. In other embodiments, the above content ratio is 0.001, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 5, 7.5, 10, 15, 20, 25 mass % or more. In other embodiments, the above content ratio is 30, 25, 20, 15, 10, 7.5, 5, 1, 0.5, 0.1, 0.05 mass % or less.

上述上限值及下限值可任意組合。The above upper limit values and lower limit values may be combined arbitrarily.

於某個態樣中,(2)表面保護劑相對於組合物之總質量之含有比率通常為0.001~30質量%。In one embodiment, the content ratio of (2) the surface protective agent relative to the total mass of the composition is generally 0.001 to 30 mass %.

於某個態樣中,(2)表面保護劑相對於組合物之總質量之含有比率較佳為0.001~30質量%,更佳為0.001~10質量%,進而較佳為0.1~7.5質量%。 於其他態樣中,(2)表面保護劑之含有比率為0.001、0.01、0.05、0.1、0.5、1、5、7.5、10、15、20、25質量%以上。於其他態樣中,(2)表面保護劑之含有比率為30、25、20、15、10、7.5、5、1、0.5、0.1、0.05質量%以下。In one embodiment, the content ratio of (2) the surface protective agent relative to the total mass of the composition is preferably 0.001 to 30 mass%, more preferably 0.001 to 10 mass%, and further preferably 0.1 to 7.5 mass%. In other embodiments, the content ratio of (2) the surface protective agent is 0.001, 0.01, 0.05, 0.1, 0.5, 1, 5, 7.5, 10, 15, 20, 25 mass% or more. In other embodiments, the content ratio of (2) the surface protective agent is 30, 25, 20, 15, 10, 7.5, 5, 1, 0.5, 0.1, 0.05 mass% or less.

於本實施形態之組合物1及組合物2中,分散介質相對於組合物之總質量之含有比率並無特別限定。In the composition 1 and the composition 2 of the present embodiment, the content ratio of the dispersion medium relative to the total mass of the composition is not particularly limited.

於某個態樣中,作為上述含有比率,就提高(1)鈣鈦礦化合物之分散性之觀點及提高耐久性之觀點而言,較佳為99.99質量%以下,更佳為99.9質量%以下,進而較佳為99質量%以下。In one embodiment, the content ratio is preferably 99.99 mass % or less, more preferably 99.9 mass % or less, and further preferably 99 mass % or less, from the viewpoint of improving (1) the dispersibility of the calcium-titanium compound and improving durability.

又,於某個態樣中,作為上述含有比率,就提高耐久性之觀點而言,較佳為0.1質量%以上,更佳為1質量%以上,進而較佳為10質量%以上,進而較佳為50質量%以上,進而較佳為80質量%以上,最佳為90質量%以上。In a certain aspect, the content ratio is preferably 0.1 mass % or more, more preferably 1 mass % or more, further preferably 10 mass % or more, further preferably 50 mass % or more, further preferably 80 mass % or more, and most preferably 90 mass % or more from the viewpoint of improving durability.

上述上限值及下限值可任意組合。The above upper limit values and lower limit values may be combined arbitrarily.

於某個態樣中,分散介質相對於組合物之總質量之含有比率通常為0.1~99.99質量%。In one aspect, the content ratio of the dispersion medium relative to the total mass of the composition is usually 0.1 to 99.99 mass %.

於某個態樣中,分散介質相對於組合物之總質量之含有比率較佳為1~99質量%,更佳為10~99質量%,進而較佳為20~99質量%,尤佳為50~99質量%,最佳為90~99質量%。 於其他態樣中,分散介質之含有比率為1、5、10、20、30、40、50、60、70、80、90、95質量%以上。於其他態樣中,分散介質之含有比率為99、95、90、80、70、60、50、40、30、20、10、5質量%以下。In one embodiment, the content ratio of the dispersion medium relative to the total mass of the composition is preferably 1-99 mass%, more preferably 10-99 mass%, further preferably 20-99 mass%, particularly preferably 50-99 mass%, and most preferably 90-99 mass%. In other embodiments, the content ratio of the dispersion medium is 1, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 95 mass% or more. In other embodiments, the content ratio of the dispersion medium is 99, 95, 90, 80, 70, 60, 50, 40, 30, 20, 10, 5 mass% or less.

又,於某個態樣中,於上述組合物中,(1)鈣鈦礦化合物、(2)表面保護劑及分散介質之總含有比率相對於組合物之總質量可為90質量%以上,亦可為95質量%以上,亦可為99質量%以上,亦可為100質量%。In a certain aspect, in the above composition, the total content ratio of (1) the calcium-titanium compound, (2) the surface protective agent and the dispersion medium relative to the total mass of the composition can be 90 mass % or more, 95 mass % or more, 99 mass % or more, or 100 mass %.

於本實施形態之組合物1及組合物2中,(6)表面修飾劑相對於組合物之總質量之含有比率並無特別限定。In Composition 1 and Composition 2 of this embodiment, the content ratio of (6) the surface modifying agent relative to the total mass of the composition is not particularly limited.

於某個態樣中,作為上述含有比率,就提高耐久性之觀點而言,較佳為30質量%以下,更佳為1質量%以下,進而較佳為0.1質量%以下。In a certain aspect, the content ratio is preferably 30 mass % or less, more preferably 1 mass % or less, and further preferably 0.1 mass % or less from the viewpoint of improving durability.

又,於某個態樣中,作為上述含有比率,就提高熱耐久性之觀點而言,較佳為0.0001質量%以上,更佳為0.001質量%以上,進而較佳為0.01質量%以上。 於其他態樣中,上述含有比率為0.001、0.005、0.01、0.05、0.1、0.5、1、5、10、15、20、25質量%以上。於其他態樣中,上述含有比率為30、25、20、15、10、5、1、0.5、0.1、0.05、0.01、0.005質量%以下。In addition, in a certain embodiment, the above content ratio is preferably 0.0001 mass % or more, more preferably 0.001 mass % or more, and further preferably 0.01 mass % or more from the viewpoint of improving thermal durability. In other embodiments, the above content ratio is 0.001, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 5, 10, 15, 20, 25 mass % or more. In other embodiments, the above content ratio is 30, 25, 20, 15, 10, 5, 1, 0.5, 0.1, 0.05, 0.01, 0.005 mass % or less.

上述上限值及下限值可任意地組合。The above upper limit values and lower limit values may be combined arbitrarily.

於某個態樣中,(6)表面修飾劑相對於組合物之總質量之含有比率通常為0.0001~30質量%。In one embodiment, the content ratio of (6) the surface modifying agent relative to the total mass of the composition is generally 0.0001 to 30 mass %.

於某個態樣中,(6)表面修飾劑相對於組合物之總質量之含有比率較佳為0.001~1質量%,更佳為0.01~0.1質量%。 於其他態樣中,(6)表面修飾劑之含有比率為0.0001、0.0005、0.001、0.005、0.01、0.05、0.1、0.5、1、5、10、15、20、25質量%以上。於其他態樣中,(6)表面修飾劑之含有比率為30、25、20、15、10、5、1、0.5、0.1、0.05、0.01、0.005質量%以下。In one embodiment, the content ratio of (6) the surface modifier relative to the total mass of the composition is preferably 0.001-1 mass%, and more preferably 0.01-0.1 mass%. In other embodiments, the content ratio of (6) the surface modifier is 0.0001, 0.0005, 0.001, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 5, 10, 15, 20, 25 mass% or more. In other embodiments, the content ratio of (6) the surface modifier is 30, 25, 20, 15, 10, 5, 1, 0.5, 0.1, 0.05, 0.01, 0.005 mass% or less.

(6)表面修飾劑相對於組合物之總質量之含有比率為上述範圍內之組合物於熱耐久性優異之方面上較佳。(6) The composition having the content ratio of the surface modifying agent relative to the total mass of the composition within the above range is better in terms of excellent thermal durability.

於某個態樣中,本實施形態之組合物中之若干雜質、包含構成(1)鈣鈦礦化合物之元素之具有非晶形結構之化合物、聚合起始劑之總含有比率相對於組合物之總質量較佳為10質量%以下,更佳為5質量%以下,進而較佳為1質量%以下。In a certain aspect, the total content ratio of the impurities, the amorphous compound containing the elements constituting the (1) calcium-titanium compound, and the polymerization initiator in the composition of the present embodiment is preferably 10 mass % or less, more preferably 5 mass % or less, and further preferably 1 mass % or less, relative to the total mass of the composition.

<各成分之調配比> 於本實施形態之組合物1及2中,(1)鈣鈦礦化合物相對於分散介質之質量比[(1)鈣鈦礦化合物/分散介質]可為0.00001~10,亦可為0.0001~5,亦可為0.0005~3。<Ratio of each component> In the compositions 1 and 2 of the present embodiment, the mass ratio of (1) the calcium-titanium compound to the dispersion medium [(1) calcium-titanium compound/dispersion medium] may be 0.00001 to 10, 0.0001 to 5, or 0.0005 to 3.

(1)鈣鈦礦化合物與分散介質之調配比之範圍為上述範圍內之組合物於不易產生(1)鈣鈦礦化合物之凝集,良好地發光之方面上較佳。The composition having the mixing ratio of (1) the calcium-titanium compound to the dispersion medium within the above range is preferred in that (1) the calcium-titanium compound is less likely to aggregate and has good luminescence.

於本實施形態之組合物1中,(1)鈣鈦礦化合物與(2)表面保護劑之調配比可根據(1)、(2)之種類等而適宜決定。In the composition 1 of this embodiment, the mixing ratio of (1) the calcium-titanium compound and (2) the surface protecting agent can be appropriately determined according to the types of (1) and (2).

於本實施形態之組合物1中,作為(1)鈣鈦礦化合物之B成分之金屬離子與(2)表面保護劑之Si元素之莫耳比[Si/B]可為0.001~200,亦可為0.01~50。In the composition 1 of the present embodiment, the molar ratio [Si/B] of the metal ions as the B component of the (1) calcium-titanium compound and the Si element as the (2) surface protective agent can be 0.001 to 200, or 0.01 to 50.

於本實施形態之組合物1中,於(2)表面保護劑為式(B1)或(B2)所表示之矽氮烷之改質體之情形時,作為(1)鈣鈦礦化合物之B成分之金屬離子與(2-1)矽氮烷之改質體之Si之莫耳比[Si/B]可為0.001~100,亦可為0.001~50,亦可為1~20。In the composition 1 of the present embodiment, when the surface protective agent (2) is a modified form of silazane represented by formula (B1) or (B2), the molar ratio [Si/B] of the metal ion as the B component of the calcium-titanium compound (1) to Si of the modified form of silazane (2-1) may be 0.001 to 100, 0.001 to 50, or 1 to 20.

於本實施形態之組合物1中,於(2)表面保護劑為具有式(B3)所表示之結構單元之聚矽氮烷之情形時,作為(1)鈣鈦礦化合物之B成分之金屬離子與(2-1)矽氮烷之改質體之Si元素之莫耳比[Si/B]可為0.001~100,亦可為0.01~100,亦可為0.1~100,亦可為1~50,亦可為1~20。In the composition 1 of the present embodiment, when the (2) surface protective agent is a polysilazane having a structural unit represented by the formula (B3), the molar ratio [Si/B] of the metal ion as the B component of the (1) calcium-titanium compound to the Si element of the modified form of the (2-1) silazane can be 0.001 to 100, 0.01 to 100, 0.1 to 100, 1 to 50, or 1 to 20.

(1)鈣鈦礦化合物與(2)表面保護劑之調配比之範圍為上述範圍內之組合物於尤其良好地發揮藉由(2)表面保護劑而產生之對水蒸氣之耐久性提高之作用之方面而言較佳。A composition in which the mixing ratio of (1) the calcium-titanium compound to (2) the surface protective agent is within the above range is preferred in that the effect of improving the durability against water vapor produced by the (2) surface protective agent is particularly good.

作為上述鈣鈦礦化合物之B成分之金屬離子與(2)表面保護劑之Si元素之莫耳比[Si/B]可藉由如以下之方法而求得。 作為鈣鈦礦化合物之B成分之金屬離子之莫耳數(B)係藉由如下方式求得:藉由感應耦合電漿質量分析(ICP-MS),算出作為鈣鈦礦化合物中所含之B成分之金屬之質量後,換算為莫耳。又,(2)表面保護劑之Si元素之莫耳數(Si)係藉由自所使用之(2)表面保護劑之質量進行莫耳換算而求得。 此時之(2)表面保護劑之Si元素之莫耳數(Si)與作為鈣鈦礦化合物之B成分之金屬離子之莫耳數(B)之比為[Si/B]。The molar ratio [Si/B] of the metal ion as the B component of the above-mentioned calcium-titanium compound to the Si element of the (2) surface protective agent can be obtained by the following method. The molar number (B) of the metal ion as the B component of the calcium-titanium compound is obtained by calculating the mass of the metal as the B component contained in the calcium-titanium compound by inductively coupled plasma mass spectrometry (ICP-MS) and converting it into moles. In addition, the molar number (Si) of the Si element of the (2) surface protective agent is obtained by converting the mass of the (2) surface protective agent used into moles. At this time, the ratio of the molar number of Si element in (2) the surface protective agent (Si) to the molar number of metal ions as the B component of the calcium-titanium compound (B) is [Si/B].

於某個態樣中,於本實施形態之組合物中,就充分提高量子產率之觀點而言,相對於(1)鈣鈦礦化合物之質量,(2)表面保護劑之質量較佳為1.1質量份以上,更佳為1.5質量份以上,進而較佳為1.8質量份以上。又,於其他態樣中,相對於(1)鈣鈦礦化合物之質量,(2)表面保護劑之質量較佳為10質量份以下,更佳為4.9質量份以下,進而較佳為2.5質量份以下。 上述上限值及下限值可任意組合。In a certain embodiment, in the composition of the present embodiment, from the viewpoint of sufficiently improving the quantum yield, the mass of (2) the surface protective agent is preferably 1.1 parts by mass or more, more preferably 1.5 parts by mass or more, and further preferably 1.8 parts by mass or more relative to the mass of (1) the calcium-titanium compound. In other embodiments, the mass of (2) the surface protective agent is preferably 10 parts by mass or less, more preferably 4.9 parts by mass or less, and further preferably 2.5 parts by mass or less relative to the mass of (1) the calcium-titanium compound. The above upper and lower limits may be arbitrarily combined.

若藉由本實施形態之半導體化合物之製造方法,則可製造本實施形態之(1)鈣鈦礦化合物及於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60之含有金屬元素M之半導體化合物。By using the method for producing a semiconductor compound of the present embodiment, it is possible to produce (1) a calcium-titanium compound of the present embodiment and a semiconductor compound containing a metal element M having a peak half-value width of the Miller index (001) of a plane in an X-ray diffraction pattern of 0.10 or more and less than 0.60.

<半導體化合物之製造方法> 本實施形態之半導體化合物之製造方法包括:將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料與水混合之步驟、及於上述水之存在下使上述原料反應之步驟。又,上述水之質量WW 相對於上述原料中所含之金屬元素M之質量WM 之比即(WW /WM )為0.05~100。<Method for producing semiconductor compounds> The method for producing semiconductor compounds of this embodiment comprises: a step of mixing raw materials of either or both of a simple substance containing a metal element M and a compound containing a metal element M with water, and a step of reacting the raw materials in the presence of the water. The ratio of the mass W W of the water to the mass W M of the metal element M contained in the raw materials, i.e., (W W /W M ), is 0.05 to 100.

若於進行使含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料反應而生成之半導體化合物之結晶化之步驟中存在水,則生成半導體化合物之結晶之一部分溶解,其後半導體化合物進行再結晶,藉此半導體化合物之結晶性得以提高。If water is present in the step of crystallizing the semiconductor compound generated by reacting either or both of the raw materials of a simple substance containing the metal element M and a compound containing the metal element M, a portion of the crystals of the generated semiconductor compound will dissolve, and then the semiconductor compound will recrystallize, thereby improving the crystallinity of the semiconductor compound.

<金屬元素M> 作為本實施形態之半導體化合物之製造方法中所含之金屬元素M,可列舉週期表之第2族~14族之金屬元素作為例。作為週期表之第2~14族之金屬元素,並無特別限定,例如可列舉:Mg、Ca、Sr、Ba、Cu、Zn、Cd、Hg、Al、Ga、In、Sn、Pb。<Metal element M> As the metal element M contained in the method for producing the semiconductor compound of the present embodiment, metal elements of Groups 2 to 14 of the periodic table can be cited as examples. The metal elements of Groups 2 to 14 of the periodic table are not particularly limited, and examples thereof include: Mg, Ca, Sr, Ba, Cu, Zn, Cd, Hg, Al, Ga, In, Sn, and Pb.

本實施形態之半導體化合物除上述金屬元素M以外,亦可含有週期表之第13~17族之非金屬元素。作為週期表第13~17族之非金屬元素,並無特別限定,例如可列舉:B、C、N、P、As、Sb、Se、Te、F、Cl、Br、I、S。The semiconductor compound of this embodiment may contain non-metallic elements of Groups 13 to 17 of the periodic table in addition to the above-mentioned metal element M. The non-metallic elements of Groups 13 to 17 of the periodic table are not particularly limited, and examples thereof include: B, C, N, P, As, Sb, Se, Te, F, Cl, Br, I, and S.

作為藉由本實施形態之製造方法而製造之半導體化合物,可列舉:本實施形態之(1)鈣鈦礦化合物及下述(i)~(vii)之半導體化合物。 (i)含有II族-VI族化合物之半導體化合物 (ii)含有II族-V族化合物之半導體化合物 (iii)含有III族-V族化合物之半導體化合物 (iv)含有III族-IV族化合物之半導體化合物 (v)含有III族-VI族化合物之半導體化合物 (vi)含有IV族-VI族化合物之半導體化合物 (vii)含有過渡金屬-p區化合物之半導體化合物As semiconductor compounds produced by the production method of this embodiment, there can be listed: (1) calcium titanium compound of this embodiment and the semiconductor compounds of (i) to (vii) below. (i) Semiconductor compound containing II-VI compound (ii) Semiconductor compound containing II-V compound (iii) Semiconductor compound containing III-V compound (iv) Semiconductor compound containing III-IV compound (v) Semiconductor compound containing III-VI compound (vi) Semiconductor compound containing IV-VI compound (vii) Semiconductor compound containing transition metal-p-zone compound

<(i)含有II族-VI族化合物之半導體化合物> 作為含有II族-VI族化合物之半導體化合物,可列舉:包含含有週期表之第2族元素與第16族元素之化合物之半導體化合物、及包含含有週期表之第12族元素與第16族元素之化合物之半導體化合物,但並不限定於該等。 再者,於本說明書中,所謂「週期表」係指長週期型週期表。<(i) Semiconductor compounds containing Group II-VI compounds> As semiconductor compounds containing Group II-VI compounds, there can be listed: semiconductor compounds containing compounds containing Group 2 elements and Group 16 elements in the periodic table, and semiconductor compounds containing compounds containing Group 12 elements and Group 16 elements in the periodic table, but they are not limited to them. In addition, in this specification, the so-called "periodic table" refers to a long-periodic type periodic table.

於以下之說明中,有時將包含含有第2族元素與第16族元素之化合物之半導體化合物稱為「半導體化合物(i-1)」,將包含含有第12族元素與第16族元素之化合物之半導體化合物稱為「半導體化合物(i-2)」。In the following description, a semiconductor compound including a compound containing a Group 2 element and a Group 16 element is sometimes referred to as a "semiconductor compound (i-1)", and a semiconductor compound including a compound containing a Group 12 element and a Group 16 element is sometimes referred to as a "semiconductor compound (i-2)".

於某個態樣中,半導體化合物(i-1)中,作為二元系之半導體化合物,例如可列舉:MgS、MgSe、MgTe、CaS、CaSe、CaTe、SrS、SrSe、SrTe、BaS、BaSe或BaTe,但並不限定於該等。In one embodiment, the semiconductor compound (i-1) may be a binary semiconductor compound such as MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe or BaTe, but is not limited thereto.

又,於某個態樣中,作為半導體化合物(i-1),可為 (i-1-1)含有一種第2族元素、兩種第16族元素之三元系之半導體化合物 (i-1-2)含有兩種第2族元素、一種第16族元素之三元系之半導體化合物 (i-1-3)含有兩種第2族元素、兩種第16族元素之四元系之半導體化合物。In a certain embodiment, the semiconductor compound (i-1) may be: (i-1-1) a ternary semiconductor compound containing one Group 2 element and two Group 16 elements (i-1-2) a ternary semiconductor compound containing two Group 2 elements and one Group 16 element (i-1-3) a quaternary semiconductor compound containing two Group 2 elements and two Group 16 elements.

於某個態樣中,半導體化合物(i-2)中,作為二元系之半導體化合物,例如可列舉:ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、HgS、HgSe或HgTe,但並不限定於該等。In one embodiment, the semiconductor compound (i-2) may be a binary semiconductor compound such as ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe or HgTe, but is not limited thereto.

又,於某個態樣中,作為半導體化合物(i-2),可為 (i-2-1)含有一種第12族元素、兩種第16族元素之三元系之半導體化合物 (i-2-2)含有兩種第12族元素、一種第16族元素之三元系之半導體化合物 (i-2-3)含有兩種第12族元素、兩種第16族元素之四元系之半導體化合物。In a certain embodiment, the semiconductor compound (i-2) may be: (i-2-1) a ternary semiconductor compound containing one element of Group 12 and two elements of Group 16 (i-2-2) a ternary semiconductor compound containing two elements of Group 12 and one element of Group 16 (i-2-3) a quaternary semiconductor compound containing two elements of Group 12 and two elements of Group 16.

II族-VI族半導體化合物可含有第2族元素、第12族元素及第16族元素以外之元素作為摻雜元素。The Group II-Group VI semiconductor compound may contain an element other than the Group 2 elements, the Group 12 elements, and the Group 16 elements as a doping element.

<(ii)含有II族-V族化合物之半導體化合物> II族-V族半導體化合物含有第12族元素與第15族元素。<(ii) Semiconductor compounds containing Group II-Group V compounds> Group II-Group V semiconductor compounds contain Group 12 elements and Group 15 elements.

II族-V族半導體化合物中,作為二元系之半導體化合物,例如可列舉:Zn3 P2 、Zn3 As2 、Cd3 P2 、Cd3 As2 、Cd3 N2 或Zn3 N2 ,但並不限定於該等。Examples of binary semiconductor compounds in Group II to Group V semiconductor compounds include, but are not limited to, Zn 3 P 2 , Zn 3 As 2 , Cd 3 P 2 , Cd 3 As 2 , Cd 3 N 2 , and Zn 3 N 2 .

又,於某個態樣中,作為II族-V族半導體化合物,可為 (ii-1)含有一種第12族元素、兩種第15族元素之三元系之半導體化合物 (ii-2)含有兩種第12族元素、一種第15族元素之三元系之半導體化合物 (ii-3)含有兩種第12族元素、兩種第15族元素之四元系之半導體化合物。In a certain embodiment, the Group II-V semiconductor compound may be: (ii-1) a ternary semiconductor compound containing one Group 12 element and two Group 15 elements (ii-2) a ternary semiconductor compound containing two Group 12 elements and one Group 15 element (ii-3) a quaternary semiconductor compound containing two Group 12 elements and two Group 15 elements.

II族-V族半導體化合物可含有第12族元素及第15族元素以外之元素作為摻雜元素。The Group II-V semiconductor compound may contain an element other than the Group 12 element and the Group 15 element as a doping element.

<(iii)含有III族-V族化合物之半導體化合物> III族-V族半導體化合物含有第13族元素與第15族元素。<(iii) Semiconductor compounds containing Group III-V compounds> Group III-V semiconductor compounds contain Group 13 elements and Group 15 elements.

III族-V族半導體化合物中,作為二元系之半導體化合物,例如可列舉:AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb或AlN,但並不限定於該等。Among the III-V semiconductor compounds, examples of binary semiconductor compounds include, but are not limited to, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, and AlN.

又,於某個態樣中,作為III族-V族半導體化合物,可為 (iii-1)含有一種第13族元素、兩種第15族元素之三元系之半導體化合物 (iii-2)含有兩種第13族元素、一種第15族元素之三元系之半導體化合物 (iii-3)含有兩種第13族元素、兩種第15族元素之四元系之半導體化合物。In a certain embodiment, the III-V semiconductor compound may be: (iii-1) a ternary semiconductor compound containing one element of the 13th group and two elements of the 15th group (iii-2) a ternary semiconductor compound containing two elements of the 13th group and one element of the 15th group (iii-3) a quaternary semiconductor compound containing two elements of the 13th group and two elements of the 15th group.

III族-V族半導體化合物可含有第13族元素及第15族元素以外之元素作為摻雜元素。The Group III-V semiconductor compound may contain an element other than the Group 13 element and the Group 15 element as a doping element.

<(iv)含有III族-IV族化合物之半導體化合物> III族-IV族半導體化合物含有第13族元素與第14族元素。<(iv) Semiconductor compounds containing Group III-Group IV compounds> Group III-Group IV semiconductor compounds contain Group 13 elements and Group 14 elements.

III族-IV族半導體化合物中,作為二元系之半導體化合物,例如可列舉:Al4 C3 、Ga4 C3Among the group III-group IV semiconductor compounds, examples of binary semiconductor compounds include Al 4 C 3 and Ga 4 C 3 .

又,作為III族-IV族半導體化合物,可為 (iv-1)含有一種第13族元素、兩種第14族元素之三元系之半導體化合物 (iv-2)含有兩種第13族元素、一種第14族元素之三元系之半導體化合物 (iv-3)含有兩種第13族元素、兩種第14族元素之四元系之半導體化合物。In addition, as a group III-IV semiconductor compound, it can be (iv-1) a ternary semiconductor compound containing one group 13 element and two group 14 elements (iv-2) a ternary semiconductor compound containing two group 13 elements and one group 14 element (iv-3) a quaternary semiconductor compound containing two group 13 elements and two group 14 elements.

III族-IV族半導體化合物可含有第13族元素及第14族元素以外之元素作為摻雜元素。The Group III-IV semiconductor compound may contain an element other than the Group 13 element and the Group 14 element as a doping element.

<(v)含有III族-VI族化合物之半導體化合物> III族-VI族半導體化合物含有第13族元素與第16族元素。<(v) Semiconductor compounds containing Group III-VI compounds> Group III-VI semiconductor compounds contain Group 13 elements and Group 16 elements.

III族-VI族半導體化合物中,作為二元系之半導體化合物,例如可列舉:Al2 S3 、Al2 Se3 、Al2 Te3 、Ga2 S3 、Ga2 Se3 、Ga2 Te3 、GaTe、In2 S3 、In2 Se3 、In2 Te3 或InTe,但並不限定於該等。Examples of binary semiconductor compounds of Group III - VI semiconductor compounds include, but are not limited to, Al2S3 , Al2Se3 , Al2Te3 , Ga2S3 , Ga2Se3 , Ga2Te3 , GaTe, In2S3 , In2Se3 , In2Te3 , or InTe.

又,於某個態樣中,作為III族-VI族半導體化合物,可為 (v-1)含有一種第13族元素、兩種第16族元素之三元系之半導體化合物 (v-2)含有兩種第13族元素、一種第16族元素之三元系之半導體化合物 (v-3)含有兩種第13族元素、兩種第16族元素之四元系之半導體化合物。In a certain embodiment, the III-VI semiconductor compound may be: (v-1) a ternary semiconductor compound containing one element of the 13th group and two elements of the 16th group (v-2) a ternary semiconductor compound containing two elements of the 13th group and one element of the 16th group (v-3) a quaternary semiconductor compound containing two elements of the 13th group and two elements of the 16th group.

III族-VI族半導體化合物可含有第13族元素及第16族元素以外之元素作為摻雜元素。The Group III-VI semiconductor compound may contain an element other than the Group 13 elements and the Group 16 elements as a doping element.

<(vi)含有IV族-VI族化合物之半導體化合物> IV族-VI族半導體化合物含有第14族元素與第16族元素。<(vi) Semiconductor compounds containing Group IV-Group VI compounds> Group IV-Group VI semiconductor compounds contain Group 14 elements and Group 16 elements.

IV族-VI族半導體化合物中,作為二元系之半導體化合物,例如可列舉:PbS、PbSe、PbTe、SnS、SnSe或SnTe,但並不限定於該等。Among the Group IV-Group VI semiconductor compounds, examples of binary semiconductor compounds include PbS, PbSe, PbTe, SnS, SnSe, and SnTe, but are not limited thereto.

又,於某個態樣中,作為IV族-VI族半導體化合物,可為 (vi-1)含有一種第14族元素、兩種第16族元素之三元系之半導體化合物 (vi-2)含有兩種第14族元素、一種第16族元素之三元系之半導體化合物 (vi-3)含有兩種第14族元素、兩種第16族元素之四元系之半導體化合物。In a certain embodiment, the Group IV-Group VI semiconductor compound may be: (vi-1) a ternary semiconductor compound containing one Group 14 element and two Group 16 elements (vi-2) a ternary semiconductor compound containing two Group 14 elements and one Group 16 element (vi-3) a quaternary semiconductor compound containing two Group 14 elements and two Group 16 elements.

IV族-VI族半導體化合物可含有第14族元素及第16族元素以外之元素作為摻雜元素。The Group IV-Group VI semiconductor compound may contain an element other than the Group 14 element and the Group 16 element as a doping element.

<(vii)含有過渡金屬-p區化合物之半導體化合物> 過渡金屬-p區半導體化合物含有過渡金屬元素與p區元素。所謂「p區元素」係指屬於週期表之第13族至第18族之元素。<(vii) Semiconductor compounds containing transition metal-p-block compounds> Transition metal-p-block semiconductor compounds contain transition metal elements and p-block elements. The so-called "p-block elements" refer to elements belonging to Groups 13 to 18 of the periodic table.

過渡金屬-p區半導體化合物中,作為二元系之半導體化合物,例如可列舉:NiS、CrS,但並不限定於該等。Among the transition metal-p-zone semiconductor compounds, examples of binary semiconductor compounds include NiS and CrS, but the present invention is not limited thereto.

又,於某個態樣中,作為過渡金屬-p區半導體化合物,可為 (vii-1)含有一種過渡金屬元素、兩種p區元素之三元系之半導體化合物 (vii-2)含有兩種過渡金屬元素、一種p區元素之三元系之半導體化合物 (vii-3)含有兩種過渡金屬元素、兩種p區元素之四元系之半導體化合物。Furthermore, in a certain embodiment, the transition metal-p-zone semiconductor compound may be: (vii-1) a ternary semiconductor compound containing one transition metal element and two p-zone elements (vii-2) a ternary semiconductor compound containing two transition metal elements and one p-zone element (vii-3) a quaternary semiconductor compound containing two transition metal elements and two p-zone elements.

過渡金屬-p區半導體化合物可含有過渡金屬元素及p區元素以外之元素作為摻雜元素。The transition metal-p-zone semiconductor compound may contain elements other than the transition metal element and the p-zone element as doping elements.

作為上述三元系之半導體化合物或四元系之半導體化合物之具體例,可列舉:ZnCdS、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、ZnCdSSe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、GaInNAs、GaInPAs、InAlNP、InAlNAs、CuInS2 或InAlPAs等,但並不限定於該等。Specific examples of the ternary semiconductor compound or quaternary semiconductor compound include: ZnCdS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, ZnCdSSe, CdZnSeS, CdZnS eTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, CuInS2 or InAlPAs, etc., but not limited to them.

於某個態樣中,作為本實施形態之半導體化合物,較佳為本實施形態之(1)鈣鈦礦化合物、含有作為第12族元素之Cd之半導體化合物、及含有作為第13族元素之In之半導體化合物。又,於其他態樣中,作為本實施形態之化合物,更佳為(1)鈣鈦礦化合物、含有Cd與Se之半導體化合物、及含有In與P之半導體化合物。In one embodiment, the semiconductor compound of the present embodiment is preferably (1) a calcium-titanium compound, a semiconductor compound containing Cd as a Group 12 element, and a semiconductor compound containing In as a Group 13 element. In another embodiment, the compound of the present embodiment is more preferably (1) a calcium-titanium compound, a semiconductor compound containing Cd and Se, and a semiconductor compound containing In and P.

於某個態樣中,含有Cd與Se之半導體化合物較佳為二元系之半導體化合物、三元系之半導體化合物、四元系之半導體化合物之任一者。於其他態樣中,含有Cd與Se之半導體化合物中,尤佳為作為二元系之半導體化合物之CdSe。In one embodiment, the semiconductor compound containing Cd and Se is preferably any one of a binary semiconductor compound, a ternary semiconductor compound, and a quaternary semiconductor compound. In another embodiment, among the semiconductor compounds containing Cd and Se, CdSe, which is a binary semiconductor compound, is particularly preferred.

於某個態樣中,含有In與P之半導體化合物較佳為二元系之半導體化合物、三元系之半導體化合物、四元系之半導體化合物之任一者。於其他態樣中,含有In與P之半導體化合物中,尤佳為作為二元系之半導體化合物之InP。In one embodiment, the semiconductor compound containing In and P is preferably any one of a binary semiconductor compound, a ternary semiconductor compound, and a quaternary semiconductor compound. In another embodiment, among the semiconductor compounds containing In and P, InP, which is a binary semiconductor compound, is particularly preferred.

<藉由本實施形態之半導體化合物之製造方法而製造之半導體化合物之粒徑> 藉由本實施形態之半導體化合物之製造方法而製造之半導體化合物之較佳平均粒徑與上述(1)鈣鈦礦化合物之平均粒徑相同。<Particle size of the semiconductor compound produced by the method for producing a semiconductor compound of this embodiment> The preferred average particle size of the semiconductor compound produced by the method for producing a semiconductor compound of this embodiment is the same as the average particle size of the calcium-titanium compound described in (1) above.

於本說明書中,藉由本實施形態之半導體化合物之製造方法而製造之半導體化合物之平均粒徑可藉由與上述(1)鈣鈦礦化合物之平均粒徑之測定相同之方法而測定。In this specification, the average particle size of the semiconductor compound produced by the method for producing a semiconductor compound of this embodiment can be measured by the same method as the measurement of the average particle size of the calcium-titanium compound in (1) above.

本實施形態之半導體化合物之製造中使用有含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料(以下,有時將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料稱為「含有金屬元素M之原料」)。半導體化合物含有非金屬元素時,較佳為於上述原料中進而使用含有非金屬元素之化合物(以下,有時將含有非金屬元素之化合物稱為「含有非金屬元素之原料化合物」)。In the production of the semiconductor compound of the present embodiment, raw materials containing either or both of a simple substance containing a metal element M and a compound containing a metal element M are used (hereinafter, the raw materials containing either or both of a simple substance containing a metal element M and a compound containing a metal element M are sometimes referred to as "raw materials containing a metal element M"). When the semiconductor compound contains a non-metallic element, it is preferred to further use a compound containing a non-metallic element in the above raw materials (hereinafter, the compound containing a non-metallic element is sometimes referred to as "raw material compound containing a non-metallic element").

<金屬元素M之單質> 作為金屬元素M之單質,並無特別限制,可列舉上述金屬元素M之單質等。<Single substance of metal element M> The single substance of metal element M is not particularly limited, and the single substance of metal element M mentioned above can be cited.

<含有金屬元素M之化合物> 作為含有金屬元素M之化合物,並無特別限制,可列舉含有上述金屬元素M之氧化物、乙酸鹽、有機金屬化合物、鹵化物、硝酸鹽等。<Compounds containing metal element M> The compounds containing metal element M are not particularly limited, and examples thereof include oxides, acetates, organometallic compounds, halides, nitrates, etc. containing the above-mentioned metal element M.

於本實施形態之半導體化合物之製造中,可僅使用一種上述金屬元素M之單質,亦可併用兩種以上。In the production of the semiconductor compound of this embodiment, only one kind of the metal element M may be used as a single substance, or two or more kinds may be used in combination.

於本實施形態之半導體化合物之製造中,可僅使用一種上述含有金屬元素M之化合物,亦可併用兩種以上。In the production of the semiconductor compound of this embodiment, only one of the above-mentioned compounds containing the metal element M may be used, or two or more thereof may be used in combination.

<含有非金屬元素之化合物> 作為含有非金屬元素之原料化合物,並無特別限制,可使用含有半導體化合物中所含之非金屬元素之化合物。於本實施形態中,可無限制地使用含有上述週期表第13~17族之非金屬元素之化合物。<Compounds containing non-metallic elements> As raw material compounds containing non-metallic elements, there are no particular restrictions, and compounds containing non-metallic elements contained in semiconductor compounds can be used. In this embodiment, compounds containing non-metallic elements of Groups 13 to 17 of the above-mentioned periodic table can be used without restriction.

於本實施形態之半導體化合物之製造中,可僅使用一種上述含有非金屬元素之原料化合物,亦可併用兩種以上。In the production of the semiconductor compound of this embodiment, only one of the above-mentioned raw material compounds containing non-metallic elements may be used, or two or more of them may be used in combination.

((i)~(vii)之半導體化合物之製造方法) (i)~(vii)之半導體化合物可藉由對混合有含有構成半導體化合物之金屬元素M之原料與脂溶性溶劑之混合液進行加熱之方法而製造。又,較佳為視需要於上述混合液中添加含有構成半導體化合物之非金屬元素之化合物。(Method for producing semiconductor compounds of (i) to (vii)) The semiconductor compounds of (i) to (vii) can be produced by heating a mixed solution containing a raw material containing a metal element M constituting the semiconductor compound and a fat-soluble solvent. It is also preferred to add a compound containing a non-metallic element constituting the semiconductor compound to the mixed solution as needed.

作為脂溶性溶劑,例如可列舉:具有碳原子數4~20之烴基之含氮化合物、具有碳原子數4~20之烴基之含氧化合物等。Examples of the fat-soluble solvent include nitrogen-containing compounds having a carbon number of 4 to 20 and oxygen-containing compounds having a carbon number of 4 to 20.

作為碳原子數4~20之烴基,可列舉:飽和脂肪族烴基、不飽和脂肪族烴基、脂環式烴基、芳香族烴基。Examples of the alkyl group having 4 to 20 carbon atoms include a saturated aliphatic hydrocarbon group, an unsaturated aliphatic hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group.

作為碳原子數4~20之飽和脂肪族烴基,可列舉:正丁基、異丁基、正戊基、辛基、癸基、十二烷基、十六烷基、十八烷基等。Examples of the saturated aliphatic hydrocarbon group having 4 to 20 carbon atoms include n-butyl, isobutyl, n-pentyl, octyl, decyl, dodecyl, hexadecyl, and octadecyl.

作為碳原子數4~20之不飽和脂肪族烴基,可列舉:油基。Examples of unsaturated aliphatic hydrocarbon groups having 4 to 20 carbon atoms include oleyl and oleyl.

作為碳原子數4~20之脂環式烴基,可列舉:環戊基、環己基等。Examples of the alicyclic alkyl group having 4 to 20 carbon atoms include cyclopentyl and cyclohexyl.

作為碳原子數4~20之芳香族烴基,可列舉:苯基、苄基、萘基、萘基甲基等。Examples of the aromatic hydrocarbon group having 4 to 20 carbon atoms include phenyl, benzyl, naphthyl, naphthylmethyl and the like.

作為碳原子數4~20之烴基,較佳為飽和脂肪族烴基及不飽和脂肪族烴基。As the alkyl group having 4 to 20 carbon atoms, a saturated aliphatic alkyl group and an unsaturated aliphatic alkyl group are preferred.

作為含氮化合物,可列舉:胺類或醯胺類。 作為含氧化合物,可列舉:脂肪酸類。As nitrogen-containing compounds, amines or amides can be cited. As oxygen-containing compounds, fatty acids can be cited.

此種脂溶性溶劑中,較佳為具有碳原子數4~20之烴基之含氮化合物。作為此種含氮化合物,例如較佳為:正丁胺、異丁胺、正戊胺、正己胺、辛胺、癸胺、十二胺、十六胺、十八胺等烷基胺或油胺等烯基胺。Among such fat-soluble solvents, nitrogen-containing compounds having a alkyl group having 4 to 20 carbon atoms are preferred. Examples of such nitrogen-containing compounds include alkylamines such as n-butylamine, isobutylamine, n-pentylamine, n-hexylamine, octylamine, decylamine, dodecylamine, hexadecylamine, and octadecylamine, and alkenylamines such as oleylamine.

此種脂溶性溶劑可鍵結於藉由合成而產生之半導體化合物之表面。作為脂溶性溶劑鍵結於半導體化合物之表面時之鍵,例如可列舉:共價鍵、離子鍵、配位鍵、氫鍵、凡得瓦鍵等化學鍵。Such a fat-soluble solvent can bond to the surface of the semiconductor compound produced by synthesis. When the fat-soluble solvent bonds to the surface of the semiconductor compound, for example, chemical bonds such as covalent bonds, ionic bonds, coordination bonds, hydrogen bonds, and Van der Waals bonds can be listed.

上述混合液之加熱溫度可根據所使用之原料(單質或化合物)之種類而適宜設定。混合液之溫度通常為室溫~300℃。例如較佳為130~300℃,更佳為240~300℃。若加熱溫度為上述下限值以上,則晶體結構易於單一化,故而較佳。若加熱溫度為上述上限值以下,則產生之半導體化合物之晶體結構不易崩解,易於獲得目標物,故而較佳。 於某個態樣中,加熱溫度為0、5、10、50、75、100、130、150、175、200、250℃以上。於其他態樣中,加熱溫度為300、250、200、175、150、130、100、75、50、10、5℃以下。The heating temperature of the above-mentioned mixed solution can be appropriately set according to the type of raw materials (single substance or compound) used. The temperature of the mixed solution is usually room temperature to 300°C. For example, it is preferably 130-300°C, and more preferably 240-300°C. If the heating temperature is above the above lower limit, the crystal structure is easy to be unified, so it is better. If the heating temperature is below the above upper limit, the crystal structure of the produced semiconductor compound is not easy to collapse, and it is easy to obtain the target, so it is better. In a certain embodiment, the heating temperature is 0, 5, 10, 50, 75, 100, 130, 150, 175, 200, 250°C or above. In other aspects, the heating temperature is 300, 250, 200, 175, 150, 130, 100, 75, 50, 10, or less than 5°C.

混合液之加熱時間可根據所使用之原料(單質或化合物)之種類、加熱溫度而適宜設定。混合液之加熱時間例如較佳為數秒~數小時,更佳為1~60分鐘。The heating time of the mixed solution can be appropriately set according to the type of raw materials (single substance or compound) used and the heating temperature. The heating time of the mixed solution is preferably, for example, several seconds to several hours, more preferably 1 to 60 minutes.

於上述半導體化合物之製造方法中,藉由將加熱後之混合液冷卻,獲得含有作為目標物之半導體化合物之沈澱物。將沈澱物分離,適宜洗淨,藉此獲得作為目標物之半導體化合物。In the above-mentioned method for producing a semiconductor compound, a precipitate containing the target semiconductor compound is obtained by cooling the heated mixed solution. The precipitate is separated and appropriately washed to obtain the target semiconductor compound.

可對將沈澱物分離而獲得之上清液,添加合成之半導體化合物不溶或難溶之溶劑,使上清液中之半導體化合物之溶解度降低,從而產生沈澱物,回收上清液中所含之半導體化合物。作為「半導體化合物不溶或難溶之溶劑」,例如可列舉:甲醇、乙醇、丙酮、乙腈等。A solvent in which the synthesized semiconductor compound is insoluble or poorly soluble may be added to the supernatant obtained by separating the precipitate, so that the solubility of the semiconductor compound in the supernatant is reduced, thereby generating a precipitate, and recovering the semiconductor compound contained in the supernatant. Examples of "solvent in which the semiconductor compound is insoluble or poorly soluble" include methanol, ethanol, acetone, acetonitrile, etc.

於上述半導體化合物之製造方法中,可將分離之沈澱物添加至有機溶劑(例如氯仿、甲苯、己烷、正丁醇等)中而製為含有半導體化合物之溶液。In the above-mentioned method for producing a semiconductor compound, the separated precipitate can be added to an organic solvent (such as chloroform, toluene, hexane, n-butanol, etc.) to prepare a solution containing the semiconductor compound.

本實施形態之半導體化合物之製造方法包括將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料與水混合之步驟。該步驟可於水中添加上述加熱前之溶液,亦可於上述加熱前之溶液及加熱中之溶液之任一者或兩者中添加水。其中,較佳為於上述加熱前之溶液及加熱中之溶液之任一者或兩者中添加水。再者,於加熱中之溶液中添加水之情形時,添加時之溶液之溫度較佳為155℃以下,更佳為150℃以下,進而較佳為140℃以下。The manufacturing method of the semiconductor compound of the present embodiment includes the step of mixing raw materials of either or both of a simple substance containing a metal element M and a compound containing a metal element M with water. This step can be performed by adding the solution before heating to water, or by adding water to either or both of the solution before heating and the solution being heated. Among them, it is preferred to add water to either or both of the solution before heating and the solution being heated. Furthermore, when water is added to the solution being heated, the temperature of the solution at the time of addition is preferably below 155°C, more preferably below 150°C, and further preferably below 140°C.

添加之水分量係以上述添加之水之質量WW 相對於含有金屬元素M之原料中所含之金屬元素M之質量WM 的比即(WW /WM )成為0.05~100之方式設定。金屬元素M可為構成(1)鈣鈦礦化合物之B之金屬元素。(WW /WM )較佳為0.05~3.0,較佳為0.50~3.0,較佳為1.0~2.2,較佳為1.1~2.0。若(WW /WM )為上述範圍內,則可使所得半導體化合物之X射線圖案中之(hkl)=(001)之波峰之半值寬成為特定範圍。 於含有金屬元素M之原料中,使用複數種上述金屬元素M之單質或含有金屬元素M之化合物之情形時,上述WM 可藉由將所使用之全部上述金屬元素M之單質之質量之和與所使用之全部含有金屬元素M之化合物中之金屬元素M之質量之和進行合計而獲得。又,於分複數次添加水之情形時,上述WW 可採用所添加之全部水之質量。The amount of water added is set in such a way that the ratio of the mass W W of the water added to the mass W M of the metal element M contained in the raw material containing the metal element M, that is, (W W /W M ), becomes 0.05 to 100. The metal element M may be a metal element constituting B of (1) the calcium-titanium compound. (W W /W M ) is preferably 0.05 to 3.0, more preferably 0.50 to 3.0, more preferably 1.0 to 2.2, and more preferably 1.1 to 2.0. If (W W /W M ) is within the above range, the half width of the peak of (hkl) = (001) in the X-ray pattern of the obtained semiconductor compound can be made into a specific range. When a plurality of simple substances or compounds containing the metal element M are used in the raw material containing the metal element M, the W M can be obtained by adding the sum of the masses of all simple substances of the metal element M used and the sum of the masses of the metal element M in all compounds containing the metal element M. Furthermore, when water is added multiple times, the mass of all water added can be used as the W W.

於本實施形態之其他態樣中,於金屬元素M為構成(1)鈣鈦礦化合物之B之金屬元素之情形時,WM 可為(1)鈣鈦礦化合物中所含之選自由鉛、錫、銻、鉍及銦所組成之群中之一種以上之金屬元素之總質量。In other aspects of the present embodiment, when the metal element M is a metal element constituting B of the (1) calcium-titanium compound, WM may be the total mass of one or more metal elements selected from the group consisting of lead, tin, antimony, bismuth and indium contained in the (1) calcium-titanium compound.

於本實施形態之其他態樣中,上述(WW /WM )為0.05、0.06、0.07、0.09、0.1、0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、2.0、2.1、2.2、2.3、2.4、2.5、2.6、2.7、2.8、2.9、3.0以上,上述(WW /WM )為3.0、2.9、2.8、2.7、2.6、2.5、2.4、2.3、2.2、2.1、2.0、1.9、1.8、1.7、1.6、1.5、1.4、1.3、1.2、1.1、1.0、0.9、0.8、0.7、0.6、0.5、0.4、0.3、0.2、0.1、0.09、0.08、0.07、0.06以下。In other aspects of this embodiment, the above (W W /W M ) is 0.05, 0.06, 0.07, 0.09, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3.0 or more, and the above (W W /W M ) is 3.0, 2.9, 2.8, 2.7, 2.6, 2.5, 2.4, 2.3, 2.2, 2.1, 2.0, 1.9, 1.8, 1.7, 1.6, 1.5, 1.4, 1.3, 1.2, 1.1, 1.0, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, 0.3, 0.2, 0.1, 0.09, 0.08, 0.07, 0.06 or less.

就促進水於有機溶劑中之溶解之觀點而言,較佳為於添加水之溶液中含有離子性之化合物。作為離子性之化合物,較佳為銨化合物或鹵化物。From the viewpoint of promoting the dissolution of water in an organic solvent, it is preferred that the solution to which water is added contain an ionic compound. As the ionic compound, an ammonium compound or a halide is preferred.

就促進水於溶劑中之溶解之觀點而言,較佳為含有水之溶液之製備係於室溫下混合。From the viewpoint of promoting the dissolution of water in the solvent, it is preferred that the preparation of the solution containing water be mixed at room temperature.

就於反應後去除不需要之水而抑制劣化之觀點而言,較佳為一面流通惰性氣體一面進行反應。From the viewpoint of removing unnecessary water after the reaction and suppressing deterioration, it is preferred to conduct the reaction while flowing an inert gas.

於本說明書中,溶液中之水分量可使用微量水分測定裝置(AQ-2000,平沼產業公司製造,酮系電解液Hydranal-Coulomat AK)而測定。In this specification, the water content in the solution can be measured using a trace water content measuring device (AQ-2000, manufactured by Hiranuma Sangyo Co., Ltd., ketone electrolyte Hydranal-Coulomat AK).

<(1)鈣鈦礦化合物之製造方法> (1)鈣鈦礦化合物之製造方法可參考已知文獻(Nano Lett.2015, 15, 3692-3696、ACSNano, 2015, 9, 4533-4542),藉由以下所述之方法而製造。<(1) Method for producing calcium-titanium ore compounds> (1) The method for producing calcium-titanium ore compounds can be referred to known literature (Nano Lett. 2015, 15, 3692-3696, ACS Nano, 2015, 9, 4533-4542), and is produced by the method described below.

(第1製造方法) 作為鈣鈦礦化合物之製造方法,可列舉:包括使構成鈣鈦礦化合物之B成分、X成分及A成分溶解於高溫之上述(3)溶劑中而獲得溶液之步驟、及將溶液冷卻之步驟之製造方法。(First production method) As a production method of a calcium-titanium compound, there can be listed: a production method including the steps of dissolving component B, component X and component A constituting the calcium-titanium compound in the above-mentioned (3) solvent at a high temperature to obtain a solution, and the step of cooling the solution.

以下,具體說明第1製造方法。The first manufacturing method will be described in detail below.

首先,使含有B成分及X成分之化合物與含有A成分之化合物溶解於高溫之(3)溶劑中而獲得溶液。「含有A成分之化合物」可含有X成分。 本步驟可於高溫之(3)溶劑中添加各化合物使之溶解而獲得溶液。 又,本步驟亦可於(3)溶劑中添加各化合物後,藉由升溫而獲得溶液。於第1製造方法中,溶液較佳為於(3)溶劑中添加各化合物後,藉由升溫而獲得。First, a compound containing component B and component X and a compound containing component A are dissolved in a high-temperature (3) solvent to obtain a solution. The "compound containing component A" may contain component X. In this step, each compound may be added to a high-temperature (3) solvent to dissolve the compound and obtain a solution. In this step, each compound may be added to the (3) solvent and then heated to obtain a solution. In the first manufacturing method, the solution is preferably obtained by adding each compound to the (3) solvent and then heating to obtain a solution.

作為(3)溶劑,較佳為可溶解作為原料之含有B成分及X成分之化合物與含有A成分之化合物之溶劑。The solvent (3) is preferably a solvent that can dissolve the compound containing the B component and the X component and the compound containing the A component as the raw materials.

所謂「高溫」,只要為各原料溶解之溫度之溶劑即可。例如,作為高溫之(3)溶劑之溫度,較佳為60~600℃,更佳為80~400℃。The so-called "high temperature" refers to any solvent having a temperature at which the raw materials can be dissolved. For example, the temperature of the high temperature (3) solvent is preferably 60 to 600°C, more preferably 80 to 400°C.

於在(3)溶劑中添加各化合物後,藉由升溫而獲得溶液之情形時,作為升溫後之保持溫度,例如較佳為80~150℃,更佳為120~140℃。When the solution is obtained by heating the solution after adding each compound to the solvent (3), the temperature after heating is preferably 80 to 150°C, more preferably 120 to 140°C.

於第1製造方法中,較佳為於上述升溫前或升溫中之溶液中添加水。In the first production method, it is preferred that water is added to the solution before or during the heating.

於在上述升溫中之溶液中添加水之情形時,添加時之溶液之溫度較佳為155℃以下,更佳為150℃以下,進而較佳為140℃以下。When water is added to the solution being heated, the temperature of the solution at the time of addition is preferably 155° C. or lower, more preferably 150° C. or lower, and further preferably 140° C. or lower.

添加之水分量以上述添加之水之質量WW 相對於含有金屬元素M之原料中所含之金屬元素M之質量WM 之比即(WW /WM )成為0.05~100之方式設定。(WW /WM )較佳為0.05~3.0,較佳為0.5~3.0,較佳為1.0~2.2,較佳為1.1~2.0。若(WW /WM )為上述範圍內,則可使所得(1)鈣鈦礦化合物之X射線圖案中之(hkl)=(001)之波峰之半值寬成為特定範圍。 於某個態樣中,(WW /WM )為0.5、0.75、1.0、1.1、1.5、2.0、2.2、2.5以上。於其他態樣中,(WW /WM )為3.0、2.5、2.2、2.0、1.5、1.1、1.0、0.75以下。The amount of water added is set so that the ratio of the mass W W of the water added to the mass W M of the metal element M contained in the raw material containing the metal element M, that is, (W W /W M ), is 0.05 to 100. (W W /W M ) is preferably 0.05 to 3.0, more preferably 0.5 to 3.0, more preferably 1.0 to 2.2, and more preferably 1.1 to 2.0. If (W W /W M ) is within the above range, the half width of the peak of (hkl) = (001) in the X-ray pattern of the obtained (1) calcium-titanium compound can be made into a specific range. In a certain embodiment, (W W /W M ) is 0.5, 0.75, 1.0, 1.1, 1.5, 2.0, 2.2, 2.5 or more. In other aspects, (W W /W M ) is 3.0, 2.5, 2.2, 2.0, 1.5, 1.1, 1.0, or less than 0.75.

於含有金屬元素M之原料中,使用複數種金屬元素M之單質或含有金屬元素M之化合物之情形時,上述WM 可藉由將所使用之全部金屬元素M之單質之質量之和與所使用之全部含有金屬元素M之化合物中之金屬元素M之質量之和進行合計而獲得。又,於分複數次添加水之情形時,上述WW 可採用所添加之全部水之質量。 再者,於本實施形態中,上述B成分為金屬元素M。When a plurality of simple substances of the metal element M or compounds containing the metal element M are used in the raw material containing the metal element M, the W M can be obtained by adding the sum of the masses of all simple substances of the metal element M used and the sum of the masses of the metal element M in all compounds containing the metal element M used. In addition, when water is added multiple times, the W W can be the mass of all water added. In addition, in this embodiment, the B component is the metal element M.

就促進水於有機溶劑中之溶解之觀點而言,較佳為於添加水之溶液中含有離子性之化合物。作為離子性之化合物,較佳為銨化合物或鹵化物。From the viewpoint of promoting the dissolution of water in an organic solvent, it is preferred that the solution to which water is added contain an ionic compound. As the ionic compound, an ammonium compound or a halide is preferred.

就促進水於溶劑中之溶解之觀點而言,較佳為含有水之溶液之製備係於室溫下混合。From the viewpoint of promoting the dissolution of water in the solvent, it is preferred that the preparation of the solution containing water be mixed at room temperature.

就於反應後去除不需要之水而抑制劣化之觀點而言,較佳為一面流通惰性氣體一面進行反應。From the viewpoint of removing unnecessary water after the reaction and suppressing deterioration, it is preferred to conduct the reaction while flowing an inert gas.

繼而,將所得溶液冷卻。 於某個態樣中,作為冷卻溫度,較佳為-20~50℃,更佳為-10~30℃。 於某個態樣中,冷卻溫度為-20、-15、-10、-5、0、5、10、15、20、25、30、35、40、45℃以上。於其他態樣中,冷卻溫度為50、45、40、35、30、25、20、15、10、5、0、-5、-10、-15℃以下。 作為冷卻速度,較佳為0.1~1500℃/分鐘,更佳為10~150℃/分鐘。 於某個態樣中,冷卻速度為0.1、0.5、1、5、10、25、50、75、100、150、250、500、750、1000、1250℃/min以上。於其他態樣中,冷卻速度為1500、1250、1000、750、500、250、150、100、75、50、25、10、1、0.5℃/min以下。Then, the obtained solution is cooled. In one embodiment, the cooling temperature is preferably -20 to 50°C, and more preferably -10 to 30°C. In one embodiment, the cooling temperature is -20, -15, -10, -5, 0, 5, 10, 15, 20, 25, 30, 35, 40, 45°C or more. In other embodiments, the cooling temperature is 50, 45, 40, 35, 30, 25, 20, 15, 10, 5, 0, -5, -10, -15°C or less. As the cooling rate, it is preferably 0.1 to 1500°C/min, and more preferably 10 to 150°C/min. In one embodiment, the cooling rate is 0.1, 0.5, 1, 5, 10, 25, 50, 75, 100, 150, 250, 500, 750, 1000, 1250°C/min or more. In other embodiments, the cooling rate is 1500, 1250, 1000, 750, 500, 250, 150, 100, 75, 50, 25, 10, 1, 0.5°C/min or less.

藉由將高溫之溶液冷卻,利用由溶液之溫度差引起之溶解度之差,可使鈣鈦礦化合物析出。藉此,獲得含有鈣鈦礦化合物之分散液。By cooling the high temperature solution, the calcium-titanium compound can be precipitated by utilizing the difference in solubility caused by the temperature difference of the solution. Thus, a dispersion containing the calcium-titanium compound is obtained.

對所得含有鈣鈦礦化合物之分散液進行固液分離,藉此可回收鈣鈦礦化合物。作為固液分離之方法,可列舉:過濾、藉由溶劑蒸發之濃縮等。藉由進行固液分離,可僅回收鈣鈦礦化合物。The obtained dispersion containing calcium-titanium compounds is subjected to solid-liquid separation, thereby recovering the calcium-titanium compounds. As a method of solid-liquid separation, there can be cited: filtration, concentration by evaporation of solvent, etc. By performing solid-liquid separation, only calcium-titanium compounds can be recovered.

再者,於上述製造方法中,為使所得鈣鈦礦化合物之粒子易於在分散液中穩定分散,較佳為包括添加上述(6)表面修飾劑之步驟。Furthermore, in the above-mentioned production method, in order to make the obtained calcium-titanium compound particles easily and stably dispersed in the dispersion liquid, it is preferred to include the step of adding the above-mentioned (6) surface modifier.

添加(6)表面修飾劑之步驟較佳為於冷卻步驟前進行。具體而言,(6)表面修飾劑可添加於(3)溶劑中,亦可添加於溶解含有B成分及X成分之化合物與含有A成分之化合物之溶液中。The step of adding (6) the surface modifying agent is preferably performed before the cooling step. Specifically, the surface modifying agent (6) can be added to the (3) solvent, or can be added to a solution containing the compound containing the B component and the X component and the compound containing the A component.

又,於上述製造方法中,較佳為於冷卻步驟後,包括藉由離心分離、過濾等方法而去除粗大粒子之步驟。藉由去除步驟而去除之粗大粒子之尺寸較佳為超過10 μm,更佳為超過1 μm,進而較佳為超過500 nm。Furthermore, in the above production method, preferably, after the cooling step, a step of removing coarse particles by centrifugal separation, filtration, etc. is included. The size of the coarse particles removed by the removal step is preferably larger than 10 μm, more preferably larger than 1 μm, and further preferably larger than 500 nm.

(第2製造方法) 作為鈣鈦礦化合物之製造方法,可列舉包括如下步驟之製造方法:獲得含有構成鈣鈦礦化合物之A成分、B成分之第1溶液之步驟;獲得含有構成鈣鈦礦化合物之X成分之第2溶液之步驟;將第1溶液與第2溶液混合而獲得混合液之步驟、及將所得之混合液冷卻之步驟。(Second production method) As a production method of a calcium-titanium compound, there can be listed a production method including the following steps: a step of obtaining a first solution containing component A and component B constituting the calcium-titanium compound; a step of obtaining a second solution containing component X constituting the calcium-titanium compound; a step of mixing the first solution and the second solution to obtain a mixed solution, and a step of cooling the obtained mixed solution.

以下,具體說明第2製造方法。The second manufacturing method will be described in detail below.

首先,使含有A成分之化合物與含有B成分之化合物溶解於高溫之第2溶劑中而獲得第1溶液。 本步驟可於高溫之(3)溶劑中添加各化合物使之溶解而獲得第1溶液。 又,本步驟亦可於(3)溶劑中添加各化合物後,藉由升溫而獲得第1溶液。於第2製造方法中,第1溶液較佳為於(3)溶劑中添加各化合物後,藉由升溫而獲得。First, a compound containing component A and a compound containing component B are dissolved in a high-temperature second solvent to obtain a first solution. In this step, each compound can be added to a high-temperature (3) solvent to dissolve them to obtain the first solution. In this step, each compound can be added to the (3) solvent and then heated to obtain the first solution. In the second manufacturing method, the first solution is preferably obtained by adding each compound to the (3) solvent and then heating.

作為(3)溶劑,較佳為可溶解含有A成分之化合物與含有B成分之化合物之溶劑。The (3) solvent is preferably a solvent that can dissolve the compound containing the A component and the compound containing the B component.

所謂「高溫」,只要為含有A成分之化合物與含有B成分之化合物溶解之溫度即可。例如,作為高溫之(3)溶劑之溫度,較佳為60~600℃,更佳為80~400℃。The so-called "high temperature" may be any temperature at which the compound containing component A and the compound containing component B are dissolved. For example, the temperature of the high temperature (3) solvent is preferably 60 to 600°C, more preferably 80 to 400°C.

於在(3)溶劑中添加各化合物後,藉由升溫而獲得第1溶液之情形時,作為升溫後之保持溫度,例如較佳為80~150℃,更佳為120~140℃。 於某個態樣中,升溫後之保持溫度為80、90、100、110、120、130、140℃以上。於某個態樣中,升溫後之保持溫度為150、140、130、120、110、100、90、80、70℃以下。When the first solution is obtained by heating after adding each compound to the solvent (3), the holding temperature after heating is preferably 80 to 150°C, more preferably 120 to 140°C. In one embodiment, the holding temperature after heating is 80, 90, 100, 110, 120, 130, or 140°C or higher. In one embodiment, the holding temperature after heating is 150, 140, 130, 120, 110, 100, 90, 80, or 70°C or lower.

又,使含有X成分之化合物溶解於上述(3)溶劑中而獲得第2溶液。亦可使含有X成分之化合物與含有B成分之化合物溶解於(3)溶劑中而獲得第2溶液。Furthermore, the compound containing component X is dissolved in the above-mentioned solvent (3) to obtain the second solution. Alternatively, the compound containing component X and the compound containing component B are dissolved in the solvent (3) to obtain the second solution.

作為(3)溶劑,可列舉:可溶解含有X成分之化合物之溶劑。Examples of (3) solvents include solvents that can dissolve a compound containing component X.

繼而,將所得第1溶液與第2溶液混合而獲得混合液。將第1溶液與第2溶液混合時,可將一者滴至另一者中。又,可一面攪拌一面混合第1溶液與第2溶液。Then, the obtained first solution and the second solution are mixed to obtain a mixed solution. When the first solution and the second solution are mixed, one can be dropped into the other. Alternatively, the first solution and the second solution can be mixed while stirring.

於第2製造方法中,可於上述升溫前或升溫中之上述第1溶液及上述第2溶液之任一者或兩者中添加水,亦可於上述第1溶液與上述第2溶液之混合液中添加水,較佳為於上述升溫前或升溫中之上述第1溶液及上述第2溶液之任一者或兩者中添加水,更佳為於上述第2溶液中添加。In the second manufacturing method, water can be added to either or both of the first solution and the second solution before or during the heating, or can be added to a mixture of the first solution and the second solution. It is preferred to add water to either or both of the first solution and the second solution before or during the heating, and more preferably to the second solution.

於某個態樣中,於上述升溫中之第1溶液中添加水之情形時,添加時之溶液之溫度較佳為155℃以下,更佳為150℃以下,進而較佳為140℃以下。In one embodiment, when water is added to the first solution during the heating process, the temperature of the solution during the addition is preferably 155° C. or lower, more preferably 150° C. or lower, and further preferably 140° C. or lower.

於某個態樣中,於上述第2溶液中添加水之情形時,混合時之上述第1溶液之溫度較佳為155℃以下,更佳為150℃以下,進而較佳為140℃以下。In one embodiment, when water is added to the second solution, the temperature of the first solution during mixing is preferably 155° C. or lower, more preferably 150° C. or lower, and further preferably 140° C. or lower.

於某個態樣中,於上述第1溶液與上述第2溶液之混合液中添加水之情形時,添加時之混合液之溫度較佳為155℃以下,更佳為150℃以下,進而較佳為140℃以下。In one embodiment, when water is added to the mixture of the first solution and the second solution, the temperature of the mixture during the addition is preferably 155° C. or lower, more preferably 150° C. or lower, and further preferably 140° C. or lower.

於一態樣中,添加之水分量以上述添加之水之質量WW 相對於含有金屬元素M之原料中所含之金屬元素M之質量WM 之比即(WW /WM )成為0.05~100之方式設定。金屬元素M可為構成(1)鈣鈦礦化合物之B之金屬元素。(WW /WM )較佳為0.05~3.0,較佳為0.5~3.0,較佳為1.0~2.2,較佳為1.1~2.0。若(WW /WM )為上述範圍內,則可使所得(1)鈣鈦礦化合物之X射線圖案中之(hkl)=(001)之波峰之半值寬成為特定範圍。In one embodiment, the amount of water added is set in such a way that the ratio of the mass W W of the water added to the mass W M of the metal element M contained in the raw material containing the metal element M, that is, (W W /W M ), is 0.05 to 100. The metal element M may be a metal element B constituting the (1) calcium-titanium compound. (W W /W M ) is preferably 0.05 to 3.0, more preferably 0.5 to 3.0, more preferably 1.0 to 2.2, and more preferably 1.1 to 2.0. If (W W /W M ) is within the above range, the half-value width of the peak of (hkl) = (001) in the X-ray pattern of the obtained (1) calcium-titanium compound can be made into a specific range.

於其他態樣中,於含有金屬元素M之原料中,使用複數種金屬元素M之單質或含有金屬元素M之化合物之情形時,上述WM 可藉由將所使用之全部金屬元素M之單質之質量之和與所使用之全部含有金屬元素M之化合物中之金屬元素M之質量之和進行合計而獲得。又,於分複數次添加水之情形時,上述WW 可採用所添加之全部水之質量 。In other aspects, when a plurality of simple substances of the metal element M or compounds containing the metal element M are used in the raw material containing the metal element M, the above W M can be obtained by adding the sum of the masses of all simple substances of the metal element M used and the sum of the masses of the metal element M in all compounds containing the metal element M used. Furthermore, when water is added multiple times, the above W W can be the mass of all water added.

於本實施形態之其他態樣中,上述WM 可為(1)鈣鈦礦化合物中所含之選自由鉛、錫、銻、鉍及銦所組成之群中之一種以上之金屬元素之總質量。In other aspects of this embodiment, the W M may be (1) the total mass of one or more metal elements selected from the group consisting of lead, tin, antimony, bismuth and indium contained in the calcium-titanium compound.

於本實施形態之其他態樣中,上述(WW /WM )為0.05、0.06、0.07、0.09、0.1、0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9、2.0、2.1、2.2、2.3、2.4、2.5、2.6、2.7、2.8、2.9、3.0以上,上述(WW /WM )為3.0、2.9、2.8、2.7、2.6、2.5、2.4、2.3、2.2、2.1、2.0、1.9、1.8、1.7、1.6、1.5、1.4、1.3、1.2、1.1、1.0、0.9、0.8、0.7、0.6、0.5、0.4、0.3、0.2、0.1、0.09、0.08、0.07、0.06以下。In other aspects of this embodiment, the above (W W /W M ) is 0.05, 0.06, 0.07, 0.09, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3.0 or more, and the above (W W /W M ) is 3.0, 2.9, 2.8, 2.7, 2.6, 2.5, 2.4, 2.3, 2.2, 2.1, 2.0, 1.9, 1.8, 1.7, 1.6, 1.5, 1.4, 1.3, 1.2, 1.1, 1.0, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, 0.3, 0.2, 0.1, 0.09, 0.08, 0.07, 0.06 or less.

就促進水於有機溶劑中之溶解之觀點而言,較佳為於添加水之溶液中含有離子性之化合物。於某個態樣中,作為離子性之化合物,較佳為銨化合物或鹵化物。From the viewpoint of promoting the dissolution of water in an organic solvent, it is preferred that the solution to which water is added contains an ionic compound. In one embodiment, the ionic compound is preferably an ammonium compound or a halide.

就促進水於溶劑中之溶解之觀點而言,較佳為含有水之溶液之製備係於室溫下混合。From the viewpoint of promoting the dissolution of water in the solvent, it is preferred that the preparation of the solution containing water be mixed at room temperature.

就於反應後去除不需要之水而抑制劣化之觀點而言,較佳為一面流通惰性氣體一面進行反應。From the viewpoint of removing unnecessary water after the reaction and suppressing deterioration, it is preferred to conduct the reaction while flowing an inert gas.

繼而,將所得混合液冷卻。 於某個態樣中,作為冷卻溫度,較佳為-20~50℃,更佳為-10~30℃。 於某個態樣中,冷卻溫度為-20、-15、-10、-5、0、5、10、15、20、25℃以上。於其他態樣中,冷卻溫度為30、25、20、15、10、5、0、-5、-10、-15℃以下。 於某個態樣中,作為冷卻速度,較佳為0.1~1500℃/分鐘,更佳為10~150℃/分鐘。Then, the obtained mixed liquid is cooled. In one embodiment, the cooling temperature is preferably -20 to 50°C, and more preferably -10 to 30°C. In one embodiment, the cooling temperature is above -20, -15, -10, -5, 0, 5, 10, 15, 20, 25°C. In other embodiments, the cooling temperature is below 30, 25, 20, 15, 10, 5, 0, -5, -10, -15°C. In one embodiment, the cooling rate is preferably 0.1 to 1500°C/min, and more preferably 10 to 150°C/min.

於一態樣中,藉由將混合液冷卻,利用由混合液之溫度差引起之溶解度之差,可使鈣鈦礦化合物析出。藉此,獲得含有鈣鈦礦化合物之分散液。In one embodiment, by cooling the mixed solution, the calcium-titanium compound can be precipitated by utilizing the difference in solubility caused by the temperature difference of the mixed solution, thereby obtaining a dispersion containing the calcium-titanium compound.

於其他態樣中,對所得含有鈣鈦礦化合物之分散液進行固液分離,藉此可回收鈣鈦礦化合物。作為固液分離之方法,可列舉第1製造方法中所示之方法。In another embodiment, the obtained dispersion containing calcium-titanium compounds is subjected to solid-liquid separation to recover the calcium-titanium compounds. As a method for solid-liquid separation, the method shown in the first production method can be cited.

再者,於其他態樣中,於上述製造方法中,為使所得鈣鈦礦化合物之粒子易於在分散液中穩定分散,較佳為包括添加上述(6)表面修飾劑之步驟。Furthermore, in other aspects, in the above-mentioned production method, in order to make the obtained calcium-titanium compound particles easy to be stably dispersed in the dispersion, it is preferred to include the step of adding the above-mentioned (6) surface modifier.

於某個態樣中,添加(6)表面修飾劑之步驟較佳為於冷卻步驟前進行。具體而言,(6)表面修飾劑可添加於(3)溶劑、第1溶液、第2溶液、混合液之任一者中。In one embodiment, the step of adding (6) the surface modifying agent is preferably performed before the cooling step. Specifically, the surface modifying agent (6) can be added to any one of the (3) solvent, the first solution, the second solution, and the mixed solution.

又,於某個態樣中,於上述製造方法中,較佳為於冷卻步驟後,包括第1製造方法中所示之藉由離心分離、過濾等方法而去除粗大粒子之步驟。In one embodiment, the above production method preferably includes, after the cooling step, a step of removing coarse particles by centrifugal separation, filtration, etc. as described in the first production method.

<組合物1之製造方法1> 以下,為了易於理解所得組合物之性狀,將藉由組合物1之製造方法1而獲得之組合物稱為「組合物1-1」。組合物1-1為液狀之組合物。<Production method 1 of composition 1> In order to facilitate understanding of the properties of the obtained composition, the composition obtained by the production method 1 of composition 1 is referred to as "composition 1-1". Composition 1-1 is a liquid composition.

於某個態樣中,本實施形態之組合物1-1可藉由於(1)鈣鈦礦化合物及(2)表面保護劑中進而混合(3)溶劑及(4)聚合性化合物之任一者或兩者而製造。In one embodiment, the composition 1-1 of the present embodiment can be prepared by further mixing one or both of (3) a solvent and (4) a polymerizable compound into (1) a calcium-titanium compound and (2) a surface protective agent.

於一態樣中,將(1)鈣鈦礦化合物及(2)表面保護劑與(3)溶劑及(4)聚合性化合物之任一者或兩者混合時,較佳為一面攪拌一面進行。In one embodiment, when (1) the calcium-titanium compound and (2) the surface protecting agent are mixed with (3) the solvent and (4) the polymerizable compound, or both, the mixture is preferably carried out while stirring.

將(1)鈣鈦礦化合物及(2)表面保護劑與(3)溶劑及(4)聚合性化合物之任一者或兩者混合時,混合時之溫度並無特別限制。為易於使(1)鈣鈦礦化合物及(2)表面保護劑均勻混合,混合時之溫度較佳為0℃~100℃之範圍,更佳為10℃~80℃之範圍。 於某個態樣中,將(1)鈣鈦礦化合物及(2)表面保護劑與(3)溶劑及(4)聚合性化合物之任一者或兩者混合時之溫度為0、5、10、15、20、25、30、35、40、45、50、55、60、65、70、75、80、85、90、95℃以上。於其他態樣中,將(1)鈣鈦礦化合物及(2)表面保護劑與(3)溶劑及(4)聚合性化合物之任一者或兩者混合時之溫度為100、95、90、85、80、75、70、65、60、55、50、45、40、35、25、20、15、10、5℃以下。When (1) the calcium-titanium compound and (2) the surface protective agent are mixed with either or both of (3) the solvent and (4) the polymerizable compound, the temperature during the mixing is not particularly limited. In order to facilitate uniform mixing of (1) the calcium-titanium compound and (2) the surface protective agent, the temperature during the mixing is preferably in the range of 0°C to 100°C, and more preferably in the range of 10°C to 80°C. In a certain embodiment, the temperature during the mixing of (1) the calcium-titanium compound and (2) the surface protective agent and either or both of (3) the solvent and (4) the polymerizable compound is 0, 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95°C or above. In other embodiments, the temperature at which (1) the calcium-titanium compound and (2) the surface protecting agent are mixed with either or both of (3) the solvent and (4) the polymerizable compound is 100, 95, 90, 85, 80, 75, 70, 65, 60, 55, 50, 45, 40, 35, 25, 20, 15, 10, or 5° C. or less.

(含有(3)溶劑之組合物1-1之製造方法) 作為含有(1)鈣鈦礦化合物、(2)表面保護劑及(3)溶劑之組合物之製造方法,例如可為下述製造方法(a1),亦可為下述製造方法(a2)。(Method for producing composition 1-1 containing (3) solvent) As a method for producing a composition containing (1) a calcium-titanium compound, (2) a surface protective agent, and (3) a solvent, for example, the following production method (a1) or the following production method (a2) may be used.

製造方法(a1):包括將(1)鈣鈦礦化合物與(3)溶劑混合之步驟、及將所得之混合物與(2)表面保護劑混合之步驟的組合物之製造方法。Production method (a1): A method for producing a composition comprising the steps of mixing (1) a calcium-titanium compound and (3) a solvent, and mixing the resulting mixture with (2) a surface protecting agent.

製造方法(a2):包括將(1)鈣鈦礦化合物與(2)表面保護劑混合之步驟、及將所得之混合物與(3)溶劑混合之步驟的組合物之製造方法。Production method (a2): A production method for a composition comprising the steps of mixing (1) a calcium-titanium compound and (2) a surface protective agent, and mixing the resulting mixture with (3) a solvent.

製造方法(a1)、(a2)中所使用之(3)溶劑較佳為難以使(1)鈣鈦礦化合物溶解者。若使用此種(3)溶劑,則製造方法(a1)中獲得之混合物及製造方法(a1)、(a2)中獲得之組合物成為分散液。The solvent (3) used in the production methods (a1) and (a2) is preferably one that is difficult to dissolve the calcium-titanium compound (1). When such a solvent (3) is used, the mixture obtained in the production method (a1) and the composition obtained in the production methods (a1) and (a2) become a dispersion.

於本實施形態之組合物含有上述(2-1)矽氮烷之改質體及上述(2-2)矽化合物之改質體之任一者或兩者作為(2)表面保護劑之情形時,作為組合物之製造方法,可為下述製造方法(a3),亦可為下述製造方法(a4)。When the composition of the present embodiment contains either or both of the modified silazane (2-1) and the modified silicon compound (2-2) as (2) the surface protective agent, the composition may be produced by the following production method (a3) or the following production method (a4).

製造方法(a3):包括將(1)鈣鈦礦化合物與(3)溶劑混合之步驟、將所得之混合物與上述(2-1)矽氮烷及上述(2-2)矽化合物之任一者或兩者混合之步驟、及對所得之混合物實施改質處理之步驟的組合物之製造方法。Preparation method (a3): A method for preparing a composition comprising the steps of mixing (1) a calcium-titanium compound and (3) a solvent, mixing the obtained mixture with either or both of the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound, and subjecting the obtained mixture to a modification treatment.

製造方法(a4):包括將(1)鈣鈦礦化合物與上述(2-1)矽氮烷及上述(2-2)矽化合物之任一者或兩者混合之步驟、將所得之混合物與(3)溶劑混合之步驟、及對所得之混合物實施改質處理之步驟的組合物之製造方法。Production method (a4): A method for producing a composition comprising the steps of mixing (1) a calcium-titanium compound with either or both of the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound, mixing the obtained mixture with (3) a solvent, and subjecting the obtained mixture to a modification treatment.

亦可於(3)溶劑中溶解或分散有(5)聚合物。(5) The polymer may be dissolved or dispersed in (3) the solvent.

於某個態樣中,於上述製造方法中所包括之混合步驟中,就提高分散性之觀點而言,較佳為進行攪拌。In one embodiment, in the mixing step included in the above-mentioned production method, stirring is preferably performed from the viewpoint of improving dispersibility.

於上述製造方法中所包括之混合步驟中,只要能夠混合,則溫度並無特別限制,就均勻地混合之觀點而言,較佳為0℃以上100℃以下之範圍,更佳為10℃以上80℃以下之範圍。 於某個態樣中,上述製造方法中所包括之混合步驟之溫度為0、5、10、15、20、25、30、35、40、45、50、55、60、65、70、75、80、85、90、95℃以上。於其他態樣中,上述製造方法中所包括之混合步驟之溫度為100、95、90、85、80、75、70、65、60、55、50、45、40、35、30、25、20、15、10、5℃以下。In the mixing step included in the above-mentioned manufacturing method, as long as mixing is possible, the temperature is not particularly limited. From the perspective of uniform mixing, it is preferably in the range of 0°C to 100°C, and more preferably in the range of 10°C to 80°C. In one embodiment, the temperature of the mixing step included in the above-mentioned manufacturing method is 0, 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95°C or above. In other embodiments, the temperature of the mixing step included in the above-mentioned manufacturing method is 100, 95, 90, 85, 80, 75, 70, 65, 60, 55, 50, 45, 40, 35, 30, 25, 20, 15, 10, 5°C or below.

組合物之製造方法就提高(1)鈣鈦礦化合物之分散性之觀點而言,較佳為製造方法(a1)或製造方法(a3)。From the viewpoint of improving the dispersibility of the calcium-titanium compound (1), the method for producing the composition is preferably the method (a1) or the method (a3).

(實施改質處理之方法) 改質處理之方法可列舉:對上述(2-1)矽氮烷及上述(2-2)矽化合物照射紫外線之方法、及使上述(2-1)矽氮烷及上述(2-2)矽化合物與水蒸氣反應之方法等公知之方法。以下之說明中,有時將使上述(2-1)矽氮烷及上述(2-2)矽化合物與水蒸氣反應之處理稱為「加濕處理」。(Methods for implementing the modification treatment) The modification treatment methods include: a method of irradiating the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound with ultraviolet rays, and a method of reacting the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound with water vapor, and other well-known methods. In the following description, the treatment of reacting the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound with water vapor is sometimes referred to as "humidification treatment".

於某個態樣中,照射紫外線之方法中所使用之紫外線之波長通常為10~400 nm,較佳為10~350 nm,更佳為100~180 nm。作為產生紫外線之光源,例如可列舉:金屬鹵素燈、高壓水銀燈、低壓水銀燈、氙弧燈、碳弧燈、準分子燈、UV(ultraviolet,紫外線)雷射光等。 於某個態樣中,照射紫外線之方法中所使用之紫外線之波長為10、20、30、40、50、60、70、80、90、100、150、200、250、300、350 nm以上。於其他態樣中,照射紫外線之方法中所使用之紫外線之波長為400、390、380、370、360、350、340、330、320、310、300、290、280、270、260、250、240、230、220、210、200、190、180、150、100 nm以下。In a certain embodiment, the wavelength of the ultraviolet light used in the method of irradiating ultraviolet light is usually 10 to 400 nm, preferably 10 to 350 nm, and more preferably 100 to 180 nm. As a light source for generating ultraviolet light, for example, there can be listed: metal halogen lamp, high-pressure mercury lamp, low-pressure mercury lamp, xenon arc lamp, carbon arc lamp, excimer lamp, UV (ultraviolet) laser light, etc. In a certain embodiment, the wavelength of the ultraviolet light used in the method of irradiating ultraviolet light is 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 150, 200, 250, 300, 350 nm or more. In other aspects, the wavelength of ultraviolet light used in the method of irradiating ultraviolet light is 400, 390, 380, 370, 360, 350, 340, 330, 320, 310, 300, 290, 280, 270, 260, 250, 240, 230, 220, 210, 200, 190, 180, 150, or 100 nm or less.

其中,就於(1)鈣鈦礦化合物之附近形成更堅固之保護區域之觀點而言,較佳為實施加濕處理。Among them, from the viewpoint of (1) forming a stronger protective zone near the calcium-titanium compound, it is more preferable to apply wet treatment.

於實施加濕處理之情形時,例如可於下述溫度及濕度條件下將組合物靜置一定時間,亦可於同條件下攪拌一定時間。When the wet treatment is performed, for example, the composition may be left to stand for a certain period of time under the following temperature and humidity conditions, or may be stirred for a certain period of time under the same conditions.

加濕處理之溫度只要為充分進行改質之溫度即可。加濕處理之溫度例如較佳為5~150℃,更佳為10~100℃,進而較佳為15~80℃。 於某個態樣中,加濕處理之溫度為5、10、15、20、30、40、50、60、70、80、90、100、110、120、130、140℃以上。於其他態樣中,加濕處理之溫度為150、140、130、120、110、100、90、80、70、60、50、40、30、20、15、10℃以下。The temperature of the moistening treatment can be any temperature at which the modification is sufficiently performed. The temperature of the moistening treatment is preferably 5 to 150°C, more preferably 10 to 100°C, and further preferably 15 to 80°C. In one embodiment, the temperature of the moistening treatment is 5, 10, 15, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140°C or more. In other embodiments, the temperature of the moistening treatment is 150, 140, 130, 120, 110, 100, 90, 80, 70, 60, 50, 40, 30, 20, 15, 10°C or less.

加濕處理之濕度只要為對組合物中之上述(2-1)及上述(2-2)充分供給水分之濕度即可。加濕處理之濕度例如較佳為30%~100%,更佳為40%~95%,進而較佳為60%~90%。The humidity of the humidification treatment may be a humidity that can sufficiently supply water to the above (2-1) and the above (2-2) in the composition. The humidity of the humidification treatment is preferably 30% to 100%, more preferably 40% to 95%, and even more preferably 60% to 90%.

加濕處理所需之時間只要為充分進行改質之時間即可。加濕處理所需之時間例如較佳為10分鐘以上1週以下,更佳為1小時以上5日以下,進而較佳為2小時以上3日以下。The time required for the wet treatment may be sufficient as long as the modification is performed. For example, the time required for the wet treatment is preferably 10 minutes to 1 week, more preferably 1 hour to 5 days, and further preferably 2 hours to 3 days.

就提高組合物中所含之上述(2-1)及上述(2-2)之分散性之觀點而言,較佳進行攪拌。From the viewpoint of improving the dispersibility of the above-mentioned (2-1) and (2-2) contained in the composition, stirring is preferably performed.

加濕處理中之水之供給可藉由於反應容器中流通含有水蒸氣之氣體而進行,亦可藉由於含有水蒸氣之環境中攪拌而自界面供給水分。The water supply in the humidification treatment can be carried out by circulating a gas containing water vapor in the reaction container, or by stirring in an environment containing water vapor to supply water from the interface.

於某個態樣中,於在反應容器中流通含有水蒸氣之氣體之情形時,為提高所得組合物之耐久性,含有水蒸氣之氣體流量較佳為0.01 L/分鐘以上100 L/分鐘以下,更佳為0.1 L/分鐘以上10 L/分鐘以下,進而較佳為0.15 L/分鐘以上5 L/分鐘以下。作為含有水蒸氣之氣體,例如可列舉:含有飽和量之水蒸氣之氮氣。 於某個態樣中,含有水蒸氣之氣體流量為0.01、0.5、1、5、10、20、30、40、50、60、70、80、90 L/min以上。於其他態樣中,含有水蒸氣之氣體流量為100、90、80、70、60、50、40、30、20、10、5、1、0.5 L/min以下。In a certain embodiment, when a gas containing water vapor is circulated in a reaction container, in order to improve the durability of the obtained composition, the flow rate of the gas containing water vapor is preferably 0.01 L/min to 100 L/min, more preferably 0.1 L/min to 10 L/min, and further preferably 0.15 L/min to 5 L/min. As the gas containing water vapor, for example, nitrogen containing saturated water vapor can be listed. In a certain embodiment, the flow rate of the gas containing water vapor is 0.01, 0.5, 1, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90 L/min or more. In other aspects, the flow rate of the gas containing water vapor is 100, 90, 80, 70, 60, 50, 40, 30, 20, 10, 5, 1, or less than 0.5 L/min.

於本實施形態之組合物之製造方法中,(2)表面保護劑及(3)溶劑可於上述(1)鈣鈦礦化合物之製造方法中所包括之任一步驟中混合。例如,可為下述製造方法(a5)、(a6)。In the method for producing the composition of this embodiment, (2) the surface protective agent and (3) the solvent may be mixed in any step included in the method for producing the calcium-titanium compound (1) above. For example, the following production methods (a5) and (a6) may be used.

製造方法(a5):包括使含有構成鈣鈦礦化合物之B成分之化合物、含有X成分之化合物、含有A成分之化合物及(2)表面保護劑溶解於高溫之(3)溶劑中而獲得溶液之步驟、以及將溶液冷卻之步驟之製造方法。Production method (a5): comprising the steps of dissolving a compound containing component B constituting a calcium-titanium compound, a compound containing component X, a compound containing component A and (2) a surface protective agent in a high temperature (3) solvent to obtain a solution, and cooling the solution.

製造方法(a6):包括使含有構成鈣鈦礦化合物之A成分之化合物、及含有B成分之化合物溶解於高溫之(3)溶劑中而獲得第1溶液之步驟、使含有構成鈣鈦礦化合物之X成分之化合物溶解於(3)溶劑中而獲得第2溶液之步驟、將第1溶液與第2溶液混合而獲得混合液之步驟、及將所得混合液冷卻之步驟之製造方法。Production method (a6): comprising the steps of dissolving a compound containing component A constituting a calcium-titanium compound and a compound containing component B in a high temperature (3) solvent to obtain a first solution, dissolving a compound containing component X constituting a calcium-titanium compound in the (3) solvent to obtain a second solution, mixing the first solution and the second solution to obtain a mixed solution, and cooling the obtained mixed solution.

於製造方法(a6)中,(2)表面保護劑溶解於第1溶液及第2溶液之任一者或兩者中。In the production method (a6), (2) the surface protecting agent is dissolved in either or both of the first solution and the second solution.

該等製造方法中所包括之各步驟之條件與上述(1)鈣鈦礦化合物之製造方法中之第1製造方法及第2製造方法之條件相同。The conditions of each step included in these production methods are the same as the conditions of the first production method and the second production method in the above-mentioned (1) production method of calcium-titanium mineral compounds.

(含有(4)聚合性化合物之組合物1-2之製造方法) 含有(1)鈣鈦礦化合物、(2)表面保護劑及(4)聚合性化合物之組合物之製造方法例如可列舉下述製造方法(c1)~(c3)。(Method for producing composition 1-2 containing (4) polymerizable compound) The method for producing a composition containing (1) a calcium-titanium compound, (2) a surface protective agent, and (4) a polymerizable compound may be exemplified by the following production methods (c1) to (c3).

製造方法(c1):包括使(1)鈣鈦礦化合物分散於(4)聚合性化合物中而獲得分散體之步驟、及將所得之分散體與(2)表面保護劑混合之步驟之製造方法。Production method (c1): A production method comprising the steps of dispersing (1) a calcium-titanium compound in (4) a polymerizable compound to obtain a dispersion, and mixing the obtained dispersion with (2) a surface protective agent.

製造方法(c2):包括使(2)表面保護劑分散於(4)聚合性化合物中而獲得分散體之步驟、及將所得之分散體與(1)鈣鈦礦化合物混合之步驟之製造方法。Production method (c2): A production method comprising the steps of dispersing (2) a surface protecting agent in (4) a polymerizable compound to obtain a dispersion, and mixing the obtained dispersion with (1) a calcium-titanium compound.

製造方法(c3):包括使(1)鈣鈦礦化合物與(2)表面保護劑之混合物分散於(4)聚合性化合物中之步驟之製造方法。Production method (c3): A production method comprising the steps of dispersing a mixture of (1) a calcium-titanium compound and (2) a surface protective agent in (4) a polymerizable compound.

於某個態樣中,於製造方法(c1)~(c3)中,就提高(1)鈣鈦礦化合物之分散性之觀點而言,較佳為製造方法(c1)。In one embodiment, among the production methods (c1) to (c3), the production method (c1) is preferred from the viewpoint of improving the dispersibility of the calcium-titanium compound (1).

於製造方法(c1)~(c3)中,於獲得各分散體之步驟中,可將(4)聚合性化合物滴至各材料中,亦可將各材料滴至(4)聚合性化合物中。 於某個態樣中,為易於均勻分散,較佳為將(1)鈣鈦礦化合物、(2)表面保護劑之至少一者滴至(4)聚合性化合物中。In the manufacturing methods (c1) to (c3), in the step of obtaining each dispersion, the polymerizable compound (4) may be dripped into each material, or each material may be dripped into the polymerizable compound (4). In a certain embodiment, in order to facilitate uniform dispersion, it is preferred to drip at least one of the (1) calcium-titanium compound and the (2) surface protective agent into the (4) polymerizable compound.

於製造方法(c1)~(c3)中,於各混合步驟中,可將分散體滴至各材料中,亦可將各材料滴至分散體中。 於某個態樣中,為易於均勻分散,較佳為將(1)鈣鈦礦化合物、(2)表面保護劑之至少一者滴至分散體中。In the manufacturing methods (c1) to (c3), in each mixing step, the dispersion can be dripped into each material, or each material can be dripped into the dispersion. In a certain embodiment, in order to facilitate uniform dispersion, it is preferred to drip at least one of (1) the calcium-titanium compound and (2) the surface protective agent into the dispersion.

可於(4)聚合性化合物中溶解或分散有(3)溶劑與(5)聚合物之至少任一者。At least one of (3) the solvent and (5) the polymer may be dissolved or dispersed in (4) the polymerizable compound.

溶解或分散(5)聚合物之溶劑並無特別限定。於某個態樣中,作為溶劑,較佳為難以溶解(1)鈣鈦礦化合物者。 作為(5)聚合物溶解之溶劑,例如可列舉上述(3)溶劑。The solvent for dissolving or dispersing the (5) polymer is not particularly limited. In a certain aspect, the solvent is preferably one that is difficult to dissolve the (1) calcium-titanium compound. As the solvent for dissolving the (5) polymer, for example, the above-mentioned (3) solvent can be cited.

於某個態樣中,(3)溶劑之中,更佳為鹵代烴及烴。In a certain aspect, among the (3) solvents, halogenated hydrocarbons and hydrocarbons are more preferred.

又,本實施形態之組合物之製造方法可為下述製造方法(c4),亦可為製造方法(c5)。Furthermore, the method for producing the composition of this embodiment may be the following production method (c4) or the following production method (c5).

製造方法(c4):具有使(1)鈣鈦礦化合物分散於(3)溶劑中而獲得分散液之步驟、於所得分散液中混合(4)聚合性化合物與(5)聚合物而獲得混合液之步驟、及將所得混合液與(2)表面保護劑混合之步驟之組合物之製造方法。Production method (c4): A method for producing a composition comprising the steps of dispersing (1) a calcium-titanium compound in (3) a solvent to obtain a dispersion, mixing (4) a polymerizable compound and (5) a polymer in the obtained dispersion to obtain a mixed solution, and mixing the obtained mixed solution with (2) a surface protective agent.

製造方法(c5):具有使(1)鈣鈦礦化合物分散於(3)溶劑中而獲得分散液之步驟、將所得分散液與上述(2-1)矽氮烷及上述(2-2)矽化合物之任一者或兩者混合而獲得混合液之步驟、對所得混合液實施改質處理而獲得含有上述(2-1)矽氮烷之改質體及上述(2-2)矽化合物之改質體之任一者或兩者之混合液之步驟、及將所得混合液與(3)溶劑混合之步驟之組合物之製造方法。Production method (c5): A method for producing a composition comprising the steps of dispersing (1) a calcium-titanium compound in (3) a solvent to obtain a dispersion, mixing the obtained dispersion with either or both of the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound to obtain a mixed solution, subjecting the obtained mixed solution to a modification treatment to obtain a mixed solution containing either or both of the modified product of the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound, and mixing the obtained mixed solution with (3) a solvent.

於組合物1之製造方法1中,使用(6)表面修飾劑時,可與(2)表面保護劑一同添加。In the method 1 for producing the composition 1, when the (6) surface modifying agent is used, it can be added together with the (2) surface protecting agent.

<組合物1之製造方法2> 作為本實施形態之組合物之製造方法,可列舉:包括將(1)鈣鈦礦化合物、(2)表面保護劑及(4)聚合性化合物混合之步驟、及使(4)聚合性化合物聚合之步驟之製造方法。<Production method 2 of composition 1> As a production method of the composition of this embodiment, there can be listed: a production method including the steps of mixing (1) a calcium-titanium compound, (2) a surface protective agent, and (4) a polymerizable compound, and polymerizing (4) the polymerizable compound.

組合物1之製造方法2中獲得之組合物較佳為(1)鈣鈦礦化合物、(2)表面保護劑、(5)聚合物之合計為組合物整體之90質量%以上。The composition obtained in the production method 2 of the composition 1 is preferably a composition in which the total amount of (1) the calcium-titanium compound, (2) the surface protective agent, and (5) the polymer is at least 90% by weight of the entire composition.

又,作為本實施形態之組合物之製造方法,亦可列舉:包括將(1)鈣鈦礦化合物、(2)表面保護劑及溶解於(3)溶劑中之(5)聚合物混合之步驟、及將(3)溶劑去除之步驟之製造方法。In addition, as a method for producing the composition of the present embodiment, there can be listed: a method for producing the composition comprising the steps of mixing (1) a calcium-titanium compound, (2) a surface protective agent, and (5) a polymer dissolved in (3) a solvent, and removing (3) the solvent.

上述製造方法中所包括之混合步驟可使用與上述組合物1之製造方法1中所示之方法相同之混合方法。The mixing step included in the above-mentioned production method can use the same mixing method as the method shown in the production method 1 of the above-mentioned composition 1.

組合物之製造方法例如可列舉下述(d1)、(d2)之製造方法。Examples of methods for producing the composition include the following production methods (d1) and (d2).

製造方法(d1):包括使(1)鈣鈦礦化合物與(2)表面保護劑分散於(4)聚合性化合物中之步驟、及使(4)聚合性化合物聚合之步驟之製造方法。Production method (d1): A production method comprising the steps of dispersing (1) a calcium-titanium compound and (2) a surface protective agent in (4) a polymerizable compound, and polymerizing (4) the polymerizable compound.

於分散步驟中,於(4)聚合性化合物中添加(1)鈣鈦礦化合物與(2)表面保護劑之順序並無限制。可先添加(1)鈣鈦礦化合物,亦可先添加(2)表面保護劑,亦可同時添加(1)鈣鈦礦化合物與(2)表面保護劑。In the step of adding (1) the calcium-titanium compound and (2) the surface protective agent to the (4) polymerizable compound, there is no restriction on the order. The (1) calcium-titanium compound may be added first, or the (2) surface protective agent may be added first, or the (1) calcium-titanium compound and (2) surface protective agent may be added simultaneously.

製造方法(d2):包括使(1)鈣鈦礦化合物與(2)表面保護劑分散於溶解有(5)聚合物之(3)溶劑中之步驟、及去除溶劑之步驟之製造方法。Production method (d2): A production method comprising the steps of dispersing (1) a calcium-titanium compound and (2) a surface protective agent in (3) a solvent in which (5) a polymer is dissolved, and removing the solvent.

於分散步驟中,於溶解有(5)聚合物之(3)溶劑中添加(1)鈣鈦礦化合物與(2)表面保護劑之順序並無限制。可先添加(1)鈣鈦礦化合物,亦可先添加(2)表面保護劑,亦可同時添加(1)鈣鈦礦化合物與(2)表面保護劑。There is no restriction on the order of adding (1) the calcium-titanium compound and (2) the surface protective agent to (3) the solvent in which (5) the polymer is dissolved in the separation step. (1) The calcium-titanium compound may be added first, or (2) the surface protective agent may be added first, or (1) the calcium-titanium compound and (2) the surface protective agent may be added simultaneously.

製造方法(d2)中所包括之去除(3)溶劑之步驟可為於室溫下靜置,使之自然乾燥之步驟,亦可為使用真空乾燥機之減壓乾燥,亦可為藉由加熱而使(3)溶劑蒸發之步驟。The step of removing the solvent (3) included in the production method (d2) may be a step of leaving the mixture to dry naturally at room temperature, a step of drying under reduced pressure using a vacuum dryer, or a step of evaporating the solvent (3) by heating.

於去除(3)溶劑之步驟中,例如可藉由於0℃以上300℃以下,乾燥1分鐘以上7日以下,而去除(3)溶劑。In the step of removing the solvent (3), the solvent (3) can be removed by, for example, drying at a temperature of 0° C. to 300° C. for 1 minute to 7 days.

製造方法(d1)中所包括之使(4)聚合性化合物聚合之步驟可藉由適宜使用自由基聚合等公知之聚合反應而進行。The step of polymerizing the polymerizable compound (4) included in the production method (d1) can be carried out by appropriately using a known polymerization reaction such as free radical polymerization.

例如於自由基聚合之情形時,於(1)鈣鈦礦化合物與(2)表面保護劑與(4)聚合性化合物之混合物中添加自由基聚合起始劑,使自由基產生,藉此可進行聚合反應。For example, in the case of free radical polymerization, a free radical polymerization initiator is added to a mixture of (1) a calcium titanium compound, (2) a surface protective agent, and (4) a polymerizable compound to generate free radicals, thereby allowing the polymerization reaction to proceed.

自由基聚合起始劑並無特別限定,例如可列舉:光自由基聚合起始劑等。The radical polymerization initiator is not particularly limited, and examples thereof include photoradical polymerization initiators and the like.

作為上述光自由基聚合起始劑,例如可列舉:雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦等。Examples of the photoradical polymerization initiator include bis(2,4,6-trimethylbenzyl)-phenylphosphine oxide and the like.

於組合物1之製造方法2中,使用(6)表面修飾劑時,可與(2)表面保護劑一同添加。In the method 2 for producing the composition 1, when the surface modifying agent (6) is used, it can be added together with the surface protecting agent (2).

<組合物1之製造方法3> 又,本實施形態之組合物之製造方法亦可採用下述(d3)~(d6)之製造方法。<Production method 3 of composition 1> In addition, the production method of the composition of this embodiment can also adopt the following production methods (d3) to (d6).

製造方法(d3):包括將(1)鈣鈦礦化合物與(2)表面保護劑與(5)聚合物熔融混練之步驟之製造方法。Production method (d3): A production method comprising the steps of melt-kneading (1) a calcium-titanium compound, (2) a surface protective agent and (5) a polymer.

製造方法(d4):包括將(1)鈣鈦礦化合物與上述(2-1)矽氮烷及上述(2-2)矽化合物之任一者或兩者與(5)聚合物熔融混練之步驟、及於(5)聚合物熔融之狀態下實施加濕處理之步驟之製造方法。Production method (d4): A production method comprising the steps of melt-kneading (1) a calcium-titanium compound, one or both of the above-mentioned (2-1) silazane and the above-mentioned (2-2) silicon compound, and (5) a polymer, and applying a wet treatment to the (5) polymer while it is molten.

製造方法(d5):包括製造含有(1)鈣鈦礦化合物與(2)表面保護劑之液狀組合物之步驟、自所得之液狀組合物取出固形物成分之步驟、將所得固形物成分與(5)聚合物熔融混練之步驟之製造方法。Production method (d5): A production method comprising the steps of preparing a liquid composition containing (1) a calcium-titanium compound and (2) a surface protective agent, removing a solid component from the obtained liquid composition, and melt-kneading the obtained solid component with (5) a polymer.

製造方法(d6):包括製造不含(2)表面保護劑而含有(1)鈣鈦礦化合物之液狀組合物之步驟、自所得之液狀組合物取出固形物成分之步驟、及將所得固形物成分與(2)表面保護劑與(5)聚合物熔融混練之步驟之製造方法。Production method (d6): comprising the steps of preparing a liquid composition containing (1) a calcium-titanium compound but not containing (2) a surface protective agent, removing a solid component from the obtained liquid composition, and melt-kneading the obtained solid component, (2) a surface protective agent and (5) a polymer.

於製造方法(d3)~(d6)中,作為將(5)聚合物熔融混練之方法,可採用作為聚合物之混練方法而公知之方法。例如可採用:使用單軸擠出機或雙軸擠出機之擠出加工。In the production methods (d3) to (d6), the method for melt-kneading the polymer (5) may be any known method for kneading a polymer. For example, extrusion using a single-screw extruder or a double-screw extruder may be used.

製造方法(d4)之實施加濕處理之步驟可採用上述方法。The step of applying the wet treatment in the manufacturing method (d4) may adopt the above-mentioned method.

製造方法(d5)及(d6)之製造液狀組合物之步驟可採用上述製造方法(a1)或(a2)。於製造方法(d6)之製造液狀組合物之步驟中,較佳為於上述製造方法(a1)或(a2)中不添加(2)表面保護劑。The step of preparing the liquid composition in the preparation methods (d5) and (d6) may adopt the above-mentioned preparation method (a1) or (a2). In the step of preparing the liquid composition in the preparation method (d6), it is preferred that (2) the surface protective agent is not added in the above-mentioned preparation method (a1) or (a2).

製造方法(d5)之製造液狀組合物之步驟例如可採用上述製造方法(a3)或(a4)。The step of preparing the liquid composition in the preparation method (d5) may adopt the above-mentioned preparation method (a3) or (a4), for example.

製造方法(d5)、(d6)之取出固形物成分之步驟係藉由例如利用加熱、減壓、送風及該等之組合,自液狀組合物去除構成液狀組合物之(3)溶劑及(4)聚合性化合物而進行。The step of removing the solid components in the production methods (d5) and (d6) is carried out by removing (3) the solvent and (4) the polymerizable compound constituting the liquid composition from the liquid composition, for example, by heating, reducing pressure, blowing air, or a combination thereof.

於某個態樣中,於組合物之製造方法3中,使用(6)表面修飾劑時,可與(2)表面保護劑一同添加。In one embodiment, in the method 3 for producing the composition, when the surface modifying agent (6) is used, it can be added together with the surface protecting agent (2).

<組合物2之製造方法> 於某個態樣中,對本實施形態之組合物2而言,除不進行(2)表面保護劑之添加、改質處理以外,可以與上述組合物1之製造方法1~3相同之方式製造。<Method for producing composition 2> In a certain aspect, composition 2 of this embodiment can be produced in the same manner as methods 1 to 3 for producing composition 1 above, except that (2) the addition and modification of the surface protective agent is not performed.

於一態樣中,於上述組合物之製造方法中,若於實施改質處理後之組合物中添加含有鹵素離子之溶液,則(1)鈣鈦礦化合物中之X與上述鹵素離子產生交換反應,從而可調整(1)鈣鈦礦化合物之最大發光波長之值。In one embodiment, in the method for producing the above-mentioned composition, if a solution containing halogen ions is added to the composition after the modification treatment, X in (1) the calcium-titanium compound and the above-mentioned halogen ions undergo an exchange reaction, thereby adjusting the value of the maximum emission wavelength of (1) the calcium-titanium compound.

於其他態樣中,可於(1)鈣鈦礦化合物之表面形成包含上述(2)表面保護劑之表面保護層後,進而形成具有矽氧烷鍵之無機矽化合物之層。 於本說明書中,所謂「具有矽氧烷鍵之無機矽化合物」係指含有有機基與矽元素,上述有機基之全部為藉由改質處理(水解)而脫離之有機基之化合物之改質體、及不具有有機基之含有矽元素之化合物之改質體。In other aspects, after forming a surface protective layer including the above-mentioned (2) surface protective agent on the surface of (1) calcium-titanium compound, a layer of inorganic silicon compound having siloxane bonds can be further formed. In this specification, the so-called "inorganic silicon compound having siloxane bonds" refers to a modified form of a compound containing an organic group and a silicon element, wherein all of the above-mentioned organic groups are organic groups that are removed by modification treatment (hydrolysis), and a modified form of a compound containing a silicon element that does not have an organic group.

作為具有矽氧烷鍵之無機矽化合物,例如可列舉:於上述式(B1)中存在複數個之R15 之全部為氫原子之二矽氮烷之改質體、於上述式(B2)中存在複數個之R15 之全部為氫原子之低分子矽氮烷之改質體、於上述式(B3)中存在複數個之R15 之全部為氫原子之高分子矽氮烷之改質體、於具有上述式(B4)所表示之結構之聚矽氮烷中存在複數個之R15 之全部為氫原子之高分子矽氮烷之改質體、矽酸鈉(Na2 SiO3 )之改質體。Examples of the inorganic silicon compound having a siloxane bond include a modified disilazane in which all of the plural R 15 's in the above formula (B1) are hydrogen atoms, a modified low molecular weight silazane in which all of the plural R 15 's in the above formula (B2) are hydrogen atoms, a modified high molecular weight silazane in which all of the plural R 15 's in the above formula (B3) are hydrogen atoms, a modified high molecular weight silazane in which all of the plural R 15 's in the polysilazane having the structure represented by the above formula (B4) are hydrogen atoms, and a modified sodium silicate (Na 2 SiO 3 ).

<組合物中所含之(1)鈣鈦礦化合物之含量之測定> 本實施形態之組合物中所含之(1)鈣鈦礦化合物可藉由乾燥質量法而算出固形物成分濃度(質量%)。關於乾燥質量法之詳細內容,於實施例中說明。<Determination of the content of (1) calcium-titanium compound contained in the composition> The solid content concentration (mass %) of (1) calcium-titanium compound contained in the composition of this embodiment can be calculated by dry mass method. The details of dry mass method are described in the examples.

<發光光譜之半值寬、吸收率、發光波長之測定> 本發明之(1)鈣鈦礦化合物之發光光譜之半值寬、吸收率、發光波長係使用絕對PL量子產率測定裝置(例如Hamamatsu Photonics股份有限公司製造,C9920-02),於激發光450 nm、室溫、大氣下測定。發光波長係使用發光強度最高值之波長。<Measurement of half-value width of luminescence spectrum, absorptivity, and luminescence wavelength> The half-value width, absorptivity, and luminescence wavelength of the luminescence spectrum of (1) the calcium-titanium compound of the present invention are measured using an absolute PL quantum yield measurement device (e.g., C9920-02 manufactured by Hamamatsu Photonics Co., Ltd.) at 450 nm of excitation light, room temperature, and atmosphere. The luminescence wavelength is the wavelength with the highest luminescence intensity.

於一態樣中,本實施形態之(1)鈣鈦礦化合物之激發光之吸收率較佳為0.2以上且未達1,更佳為0.3以上且未達0.9,進而較佳為0.6以上且未達0.9。 於某個態樣中,(1)鈣鈦礦化合物之激發光之吸收率為0.2、0.3、0.4、0.5、0.6、0.7、0.8、0.9以上。於其他態樣中,(1)鈣鈦礦化合物之激發光之吸收率為1、0.9、0.8、0.7、0.6、0.5、0.4、0.3以下。In one embodiment, the absorptivity of the laser light emitted by the calcium-titanium compound (1) of the present embodiment is preferably 0.2 or more and less than 1, more preferably 0.3 or more and less than 0.9, and further preferably 0.6 or more and less than 0.9. In a certain embodiment, the absorptivity of the laser light emitted by the calcium-titanium compound (1) is 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or more. In other embodiments, the absorptivity of the laser light emitted by the calcium-titanium compound (1) is 1, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, 0.3 or less.

<膜> 本發明之膜含有本實施形態之(1)鈣鈦礦化合物。 本實施形態之膜係以上述之組合物作為形成材料。例如,本實施形態之膜含有(1)鈣鈦礦化合物及(5)聚合物,(1)鈣鈦礦化合物及(5)聚合物之合計為膜整體之90質量%以上。<Membrane> The membrane of the present invention contains (1) a calcium-titanium compound of the present embodiment. The membrane of the present embodiment is formed by the above-mentioned composition. For example, the membrane of the present embodiment contains (1) a calcium-titanium compound and (5) a polymer, and the total amount of (1) a calcium-titanium compound and (5) a polymer is more than 90% by weight of the entire membrane.

膜形狀並無特別限定,可為片狀、條狀等任意形狀。於本說明書中所謂「條狀之形狀」例如係指於一個方向上延伸之俯視為帶狀之形狀。作為俯視為帶狀之形狀,可例示各邊之長度不同之板狀之形狀。The film shape is not particularly limited and may be in any shape such as a sheet or strip. In this specification, the term "strip shape" refers to, for example, a strip shape extending in one direction when viewed from above. As an example of a strip shape when viewed from above, a plate shape with different lengths of each side can be exemplified.

膜之厚度可為0.01 μm~1000 mm,亦可為0.1 μm~10 mm,亦可為1 μm~1 mm。 於本說明書中,膜之厚度係指將膜之縱、橫、高之中值最小之邊作為「厚度方向」時,膜之厚度方向之正面與背面之間之距離。具體而言,使用測微計,於膜之任意之3點測定膜之厚度,將3點之測定值之平均值作為膜之厚度。 於某個態樣中,膜之厚度為0.01 μm、0.5 μm、0.1 μm、0.5 μm、1 μm、5 μm、10 μm、25 μm、50 μm、75 μm、100 μm、250 μm、500 μm、750 μm、1 mm、5 mm、10 mm、25 mm、50 mm、75 mm、100 mm、250 mm、500 mm、750 mm以上。於其他態樣中,膜之厚度為1000 mm、750 mm、500 mm、250 mm、100 mm、75 mm、50 mm、25 mm、10 mm、5 mm、1 mm、750 μm、500 μm、250 μm、100 μm、75 μm、50 μm、25 μm、10 μm、5 μm、1 μm、0.5 μm、0.1 μm、0.05 μm以下。The thickness of the film can be 0.01 μm to 1000 mm, 0.1 μm to 10 mm, or 1 μm to 1 mm. In this specification, the thickness of the film refers to the distance between the front and back sides of the film in the thickness direction when the side with the smallest value among the longitudinal, transverse, and height of the film is regarded as the "thickness direction". Specifically, the thickness of the film is measured at any three points of the film using a micrometer, and the average value of the measured values at the three points is taken as the thickness of the film. In one embodiment, the thickness of the film is 0.01 μm, 0.5 μm, 0.1 μm, 0.5 μm, 1 μm, 5 μm, 10 μm, 25 μm, 50 μm, 75 μm, 100 μm, 250 μm, 500 μm, 750 μm, 1 mm, 5 mm, 10 mm, 25 mm, 50 mm, 75 mm, 100 mm, 250 mm, 500 mm, 750 mm or more. In other aspects, the thickness of the film is 1000 mm, 750 mm, 500 mm, 250 mm, 100 mm, 75 mm, 50 mm, 25 mm, 10 mm, 5 mm, 1 mm, 750 μm, 500 μm, 250 μm, 100 μm, 75 μm, 50 μm, 25 μm, 10 μm, 5 μm, 1 μm, 0.5 μm, 0.1 μm, or less than 0.05 μm.

膜可為單層,亦可為複層。於複層之情形時,各層可使用相同種類之實施形態之組合物,亦可使用相互不同種類之實施形態之組合物。The film may be a single layer or a multi-layer film. In the case of a multi-layer film, each layer may use the same or different types of compositions.

膜例如可藉由下述積層構造體之製造方法,獲得於基板上形成之膜。又,膜可自基板剝離而獲得。The film can be obtained by, for example, forming a film on a substrate by the following method for producing a laminated structure. Alternatively, the film can be obtained by peeling off the substrate.

<積層構造體> 本實施形態之積層構造體具有複數層,至少一層為上述膜。<Layered structure> The layered structure of this embodiment has a plurality of layers, at least one of which is the above-mentioned film.

積層構造體所具有之複數層中,作為上述膜以外之層,可列舉:基板、障壁層、光散射層等任意層。 積層之膜之形狀並無特別限定,可為片狀、條狀等任意形狀。Among the multiple layers possessed by the laminated structure, the layers other than the above-mentioned film may include any layer such as a substrate, a barrier layer, and a light scattering layer. The shape of the laminated film is not particularly limited and may be any shape such as a sheet or a strip.

(基板) 基板並無特別限制,可為膜。基板較佳為具有透光性者。於具備具有透光性之基板之積層構造體中,易於提取(1)鈣鈦礦化合物發出之光,故而較佳。(Substrate) The substrate is not particularly limited and may be a film. The substrate is preferably light-transmitting. In a laminated structure having a light-transmitting substrate, it is easier to extract the light emitted by (1) the calcium-titanium compound, so it is preferred.

作為基板之形成材料,例如可使用:聚對苯二甲酸乙二酯等聚合物或玻璃等公知之材料。 例如,於積層構造體中,可將上述膜設置於基板上。As the forming material of the substrate, for example, a polymer such as polyethylene terephthalate or a known material such as glass can be used. For example, in a multilayer structure, the above-mentioned film can be set on a substrate.

圖1係模式地表示本實施形態之積層構造體之構成之截面圖。第1積層構造體1a於第1基板20及第2基板21之間設置有本實施形態之膜10。膜10藉由密封層22而密封。1 is a cross-sectional view schematically showing the structure of a laminated structure of the present embodiment. A first laminated structure 1a has a film 10 of the present embodiment disposed between a first substrate 20 and a second substrate 21. The film 10 is sealed by a sealing layer 22.

本發明之一態樣係一種積層構造體1a,其特徵在於:其係具有第1基板20、第2基板21、位於第1基板20與第2基板21之間之本實施形態之膜10、及密封層22者,並且密封層22配置於膜10之未與第1基板20及第2基板21相接之面上。One aspect of the present invention is a multilayer structure 1a, which is characterized in that it has a first substrate 20, a second substrate 21, a film 10 of the present embodiment located between the first substrate 20 and the second substrate 21, and a sealing layer 22, and the sealing layer 22 is arranged on the surface of the film 10 that is not in contact with the first substrate 20 and the second substrate 21.

(障壁層) 作為本實施形態之積層構造體可具有之層,並無特別限制,可列舉障壁層。就保護上述組合物不受外部大氣之水蒸氣及大氣中之空氣影響之觀點而言,可含有障壁層。(Barrier layer) The layer that the laminated structure of this embodiment may have is not particularly limited, and a barrier layer may be mentioned. From the perspective of protecting the above-mentioned composition from water vapor in the external atmosphere and air in the atmosphere, a barrier layer may be included.

障壁層並無特別限制,就提取發光之光之觀點而言,較佳為透明者。作為障壁層,例如可使用聚對苯二甲酸乙二酯等聚合物或玻璃膜等公知之障壁層。The barrier layer is not particularly limited, but is preferably transparent from the viewpoint of extracting the luminescent light. As the barrier layer, for example, a polymer such as polyethylene terephthalate or a known barrier layer such as a glass film can be used.

(光散射層) 作為本實施形態之積層構造體可具有之層,並無特別限制,可列舉光散射層。就有效利用入射之光之觀點而言,可含有光散射層。 光散射層並無特別限制,就提取發出之光之觀點而言,較佳為透明者。作為光散射層,可使用二氧化矽粒子等光散射粒子或增強擴散膜等公知之光散射層。(Light scattering layer) The layer that the layered structure of this embodiment may have is not particularly limited, and a light scattering layer can be listed. From the perspective of effectively utilizing incident light, a light scattering layer can be included. The light scattering layer is not particularly limited, and from the perspective of extracting emitted light, a transparent one is preferably used. As the light scattering layer, light scattering particles such as silica particles or known light scattering layers such as enhanced diffusion films can be used.

<發光裝置> 本發明之發光裝置可藉由組合本發明之實施形態之化合物、組合物或上述積層構造體與光源而獲得。發光裝置係藉由將自光源發出之光照射至設置於後段之化合物、組合物或積層構造體而使化合物、組合物或積層構造體發光,從而提取光之裝置。上述發光裝置中之積層構造體所具有之複數層中,作為上述膜、基板、障壁層、光散射層以外之層,可列舉:光反射構件、亮度強度部、稜鏡片、導光板、元件間之介質材料層等任意層。 本發明之一態樣係依序積層有稜鏡片50、導光板60、上述第一積層構造體1a及光源30之發光裝置2。<Light-emitting device> The light-emitting device of the present invention can be obtained by combining the compound, composition or the above-mentioned multilayer structure of the embodiment of the present invention with a light source. The light-emitting device is a device that extracts light by irradiating the compound, composition or multilayer structure disposed in the back stage with light emitted from the light source so that the compound, composition or multilayer structure emits light. Among the multiple layers possessed by the multilayer structure in the above-mentioned light-emitting device, the layers other than the above-mentioned film, substrate, barrier layer and light scattering layer can be listed as any layer such as a light reflecting member, a brightness intensity part, a prism sheet, a light guide plate, and a dielectric material layer between components. One aspect of the present invention is a light emitting device 2 having a prism sheet 50, a light guide plate 60, the first laminated structure 1a and a light source 30 laminated in sequence.

(光源) 構成本發明之發光裝置之光源並無特別限制,就使上述化合物、上述組合物或積層構造體中之(1)鈣鈦礦化合物發光之觀點而言,較佳為具有600 nm以下之發光波長之光源。作為光源,例如可使用:藍色發光二極體等發光二極體(LED)、雷射、電致發光體(EL)等公知之光源。(Light source) The light source constituting the light-emitting device of the present invention is not particularly limited. From the viewpoint of causing the above-mentioned compound, the above-mentioned composition or the (1) calcium-titanium compound in the layered structure to emit light, a light source having a light emission wavelength of 600 nm or less is preferred. As the light source, for example, a light-emitting diode (LED) such as a blue light-emitting diode, a laser, an electroluminescent body (EL), and other known light sources can be used.

(光反射構件) 作為構成本發明之發光裝置之積層構造體可具有之層,並無特別限制,可列舉光反射構件。就朝向上述化合物、組合物或積層構造體照射光源之光之觀點而言,可含有光反射構件。光反射構件並無特別限制,可為反射膜。 作為反射膜,例如可使用反射鏡、反射粒子之膜、反射金屬膜或反射體等公知之反射膜。(Light-reflecting component) The layer that the laminated structure constituting the light-emitting device of the present invention may have is not particularly limited, and a light-reflecting component may be listed. From the perspective of irradiating light from a light source toward the above-mentioned compound, composition or laminated structure, a light-reflecting component may be contained. The light-reflecting component is not particularly limited, and may be a reflective film. As the reflective film, for example, a known reflective film such as a reflective mirror, a film of reflective particles, a reflective metal film or a reflector may be used.

(亮度強化部) 作為構成本發明之發光裝置之積層構造體可具有之層,並無特別限制,可列舉亮度強化部。就將光之一部分朝向光傳送之方向反射回來之觀點而言,可含有亮度強化部。(Brightness enhancement part) The layer that the multilayer structure constituting the light-emitting device of the present invention may have is not particularly limited, and a brightness enhancement part may be listed. From the perspective of reflecting a part of the light back in the direction in which the light is transmitted, the brightness enhancement part may be included.

(稜鏡片) 作為構成本發明之發光裝置之積層構造體可具有之層,並無特別限制,可列舉稜鏡片。代表而言,稜鏡片具有基材部與稜鏡部。再者,基材部根據鄰接之構件而可省略。稜鏡片可經由任意之適合之接著層(例如接著劑層、黏著劑層)而貼合於鄰接之構件。稜鏡片係成為凸部之複數個單位稜鏡於視認側之相反側(背面側)並列而構成。藉由將稜鏡片之凸部朝向背面側配置,透過稜鏡片之光易於聚光。又,若將稜鏡片之凸部朝向背面側配置,則與將凸部朝向視認側配置之情形相比較,未入射至稜鏡片而反射之光較少,可獲得高亮度之顯示器。(Prism) There is no particular limitation on the layers that the multilayer structure constituting the light-emitting device of the present invention may have, and a prism may be cited. Typically, a prism has a substrate portion and a prism portion. Furthermore, the substrate portion may be omitted depending on the adjacent component. The prism may be bonded to the adjacent component via any suitable bonding layer (e.g., bonding agent layer, adhesive layer). The prism is formed by arranging a plurality of unit prisms that form a convex portion on the opposite side (back side) of the viewing side. By arranging the convex portion of the prism toward the back side, light passing through the prism is easily focused. Furthermore, if the convex portion of the prism sheet is arranged toward the back side, the amount of light that is not incident on the prism sheet but is reflected is less compared to the case where the convex portion is arranged toward the viewing side, and a high-brightness display can be obtained.

(導光板) 作為構成本發明之發光裝置之積層構造體可具有之層,並無特別限制,可列舉導光板。作為導光板,例如可使用:以使來自橫向之光偏向於厚度方向之方式於背面側形成有透鏡圖案之導光板、於背面側及/或視認側形成有稜鏡形狀等之導光板等任意適合之導光板。(Light guide plate) The layers that the multilayer structure constituting the light-emitting device of the present invention may have are not particularly limited, and a light guide plate may be cited. As the light guide plate, for example, any suitable light guide plate may be used, such as a light guide plate having a lens pattern formed on the back side so that light from the lateral direction is deflected in the thickness direction, a light guide plate having a prism shape formed on the back side and/or the viewing side, etc.

(元件間之介質材料層) 作為構成本發明之發光裝置之積層構造體可具有之層,並無特別限制,可列舉:鄰接之元件(層)間之光路上之包含一種以上之介質材料之層(元件間之介質材料層)。 元件間之介質材料層中所含之一種以上之介質並無特別限制,包含:真空、空氣、氣體、光學材料、接著劑、光學接著劑、玻璃、聚合物、固體、液體、凝膠、硬化材料、光學結合材料、折射率匹配或折射率失配材料、折射率梯度材料、包覆或抗包覆材料、間隔件、矽膠、亮度強化材料、散射或擴散材料、反射或抗反射材料、波長選擇性材料、波長選擇性抗反射材料、濾色器或上述技術領域中已知之較佳介質。(Inter-element dielectric material layer) The layers that may be included in the multilayer structure constituting the light-emitting device of the present invention are not particularly limited, and examples thereof include: a layer containing one or more dielectric materials in the optical path between adjacent elements (layers) (inter-element dielectric material layer). There is no particular limitation on the one or more media contained in the dielectric material layer between the components, including: vacuum, air, gas, optical material, adhesive, optical adhesive, glass, polymer, solid, liquid, gel, curing material, optical bonding material, refractive index matching or refractive index mismatching material, refractive index gradient material, coating or anti-coating material, spacer, silicone, brightness enhancement material, scattering or diffusion material, reflective or anti-reflective material, wavelength selective material, wavelength selective anti-reflective material, color filter or better media known in the above technical field.

作為本發明之發光裝置之具體例,例如可列舉:電致發光(EL)顯示器或具備液晶顯示器用之波長轉換材料者。 具體可列舉: (E1)將本發明之組合物裝入至玻璃管等中並密封,將其以沿導光板之端面(側面)之方式配置於作為光源之藍色發光二極體與導光板之間,將藍色光轉換為綠色光或紅色光之背光源(側管封裝(On Edge)方式之背光源), (E2)將本發明之組合物片材化,將其以2張障壁膜夾持並密封而獲得膜,將該膜設置於導光板上,將自置於導光板之端面(側面)之藍色發光二極體通過導光板而照射至上述片材之藍色光轉換為綠色光或紅色光之背光源(表面封裝(On Surface)方式之背光源), (E3)使本發明之組合物分散於樹脂等中,設置於藍色發光二極體之發光部附近,將所照射之藍色光轉換為綠色光或紅色光之背光源(晶片封裝(On Chip)方式之背光源),及 (E4)使本發明之組合物分散於阻劑中,設置於彩色濾光片上,將自光源照射之藍色光轉換為綠色光或紅色光之背光源。As specific examples of the light-emitting device of the present invention, for example, an electroluminescent (EL) display or a device having a wavelength conversion material for a liquid crystal display can be cited. Specifically, the following can be cited: (E1) The composition of the present invention is placed in a glass tube or the like and sealed, and it is arranged between a blue light emitting diode as a light source and a light guide plate along the end face (side face) of the light guide plate, and the blue light is converted into a backlight source of green or red light (backlight source of side tube packaging (On Edge) method); (E2) The composition of the present invention is made into a sheet, and it is sandwiched and sealed with two barrier films to obtain a film, and the film is set on the light guide plate, and the blue light irradiated from the blue light emitting diode placed on the end face (side face) of the light guide plate to the above-mentioned sheet is converted into a backlight source of green or red light (backlight source of surface packaging (On Edge) method). Surface) backlight source), (E3) dispersing the composition of the present invention in a resin or the like, setting it near the light-emitting portion of a blue light-emitting diode, and converting the irradiated blue light into a green or red backlight source (on-chip backlight source), and (E4) dispersing the composition of the present invention in a resist, setting it on a color filter, and converting the blue light irradiated from a light source into a green or red backlight source.

又,作為本發明之發光裝置之具體例,可列舉:將本發明之實施形態之組合物成形,配置於作為光源之藍色發光二極體之後段,將藍色光轉換為綠色光或紅色光而發出白色光之照明。Furthermore, as a specific example of the light-emitting device of the present invention, the composition of the embodiment of the present invention is formed and arranged at the rear stage of a blue light-emitting diode as a light source, and the blue light is converted into green light or red light to emit white light.

<顯示器> 如圖2所示,本實施形態之顯示器3自視認側依序具備液晶面板40及上述發光裝置2。發光裝置2具備第2積層構造體1b及光源30。第2積層構造體1b係上述第1積層構造體1a進而具備稜鏡片50及導光板60者。顯示器亦可進而具備任意適合之其他構件。 本發明之一態樣係依序積層有液晶面板40、稜鏡片50、導光板60、上述第一積層構造體1a及光源30之液晶顯示器3。<Display> As shown in FIG. 2, the display 3 of this embodiment has a liquid crystal panel 40 and the above-mentioned light-emitting device 2 in order from the viewing side. The light-emitting device 2 has a second multilayer structure 1b and a light source 30. The second multilayer structure 1b is the first multilayer structure 1a further having a prism sheet 50 and a light guide plate 60. The display may also further have any other suitable components. One aspect of the present invention is a liquid crystal display 3 having a liquid crystal panel 40, a prism sheet 50, a light guide plate 60, the above-mentioned first multilayer structure 1a and a light source 30 stacked in order.

(液晶面板) 於一態樣中,上述液晶面板就代表性而言具備:液晶單元、配置於上述液晶單元之視認側之視認側偏光板、及配置於上述液晶單元之背面側之背面側偏光板。視認側偏光板及背面側偏光板可以各自之吸收軸成為實質上正交或平行之方式進行配置。(Liquid crystal panel) In one embodiment, the liquid crystal panel typically comprises: a liquid crystal unit, a viewing side polarizing plate disposed on the viewing side of the liquid crystal unit, and a back side polarizing plate disposed on the back side of the liquid crystal unit. The viewing side polarizing plate and the back side polarizing plate may be disposed in such a manner that their absorption axes are substantially orthogonal or parallel.

(液晶單元) 於一態樣中,液晶單元具有一對基板、及夾持於上述基板間之作為顯示介質之液晶層。於其他態樣中,於通常之構成中,於一個基板設置有彩色濾光片及黑矩陣,於另一基板設置有控制液晶之電光特性之開關元件、對該開關元件提供閘信號之掃描線及提供源信號之信號線、以及像素電極及對向電極。上述基板之間隔(單元間隙)可藉由間隔件等而控制。於上述基板之與液晶層相接之側例如可設置包含聚醯亞胺之配向膜等。(Liquid crystal unit) In one embodiment, the liquid crystal unit has a pair of substrates and a liquid crystal layer as a display medium sandwiched between the substrates. In other embodiments, in a conventional configuration, a color filter and a black matrix are provided on one substrate, and a switch element for controlling the electro-optical properties of the liquid crystal, a scanning line for providing a gate signal to the switch element and a signal line for providing a source signal, as well as a pixel electrode and a counter electrode are provided on the other substrate. The spacing (cell gap) between the substrates can be controlled by a spacer or the like. For example, an alignment film containing polyimide can be provided on the side of the substrate that is in contact with the liquid crystal layer.

(偏光板) 於一態樣中,偏光板代表而言具有偏光元件及配置於偏光元件之兩側之保護層。偏光元件代表而言為吸收型偏光元件。 作為上述偏光元件,可使用任意適合之偏光元件。例如可列舉:使聚乙烯醇系膜、部分縮甲醛化聚乙烯醇系膜、乙烯-乙酸乙烯酯共聚物系部分皂化膜等親水性高分子膜吸附碘或二色性染料等二色性物質並單軸延伸者,聚乙烯醇之脫水處理物或聚氯乙烯之脫氯化氫處理物等多烯系配向膜等。該等之中,使聚乙烯醇系膜吸附碘等二色性物質並單軸延伸之偏光元件之偏光二色比較高,故而尤佳。(Polarizing plate) In one embodiment, the polarizing plate typically has a polarizing element and protective layers disposed on both sides of the polarizing element. The polarizing element is typically an absorption-type polarizing element. As the above-mentioned polarizing element, any suitable polarizing element can be used. For example, hydrophilic polymer films such as polyvinyl alcohol films, partially formalized polyvinyl alcohol films, and partially saponified films of ethylene-vinyl acetate copolymers adsorb dichroic substances such as iodine or dichroic dyes and uniaxially stretch them, and polyene-based alignment films such as dehydrated polyvinyl alcohol films or dehydrochlorinated polyvinyl chloride films, etc. Among them, the polarizing element in which the polyvinyl alcohol film adsorbs dichroic substances such as iodine and is uniaxially stretched is particularly preferred because of its high polarization dichroism.

作為本實施形態之化合物或組合物之用途,例如可列舉:發光二極體(LED)用之波長轉換材料。 <LED> 本實施形態之化合物或組合物例如可用作LED之發光層之材料。 作為含有本實施形態之化合物或組合物之LED,例如可列舉如下方式:將本實施形態之化合物或組合物與ZnS等導電性粒子混合並積層為膜狀,製為於單面積層有n型傳輸層,於另一單面積層有p型傳輸層之構造,藉由流通電流,使p型半導體之電洞與n型半導體之電子於接合面之組合物中所含之(1)鈣鈦礦化合物之粒子中抵消電荷,藉此而發光。The compound or composition of the present embodiment can be used, for example, as a wavelength conversion material for a light-emitting diode (LED). <LED> The compound or composition of the present embodiment can be used, for example, as a material for a light-emitting layer of an LED. As an LED containing the compound or composition of the present embodiment, for example, the following method can be used: the compound or composition of the present embodiment is mixed with conductive particles such as ZnS and layered into a film, and a structure is prepared in which an n-type transport layer is layered on one side and a p-type transport layer is layered on the other side. By passing a current, the holes of the p-type semiconductor and the electrons of the n-type semiconductor cancel out the charges in the particles of the calcium-titanium compound (1) contained in the composition at the junction surface, thereby emitting light.

<太陽電池> 本實施形態之化合物或組合物可用作太陽電池之活性層中所含之電子傳輸性材料。 作為上述太陽電池,構成並無特別限定,例如可列舉:依序具有摻雜有氟之氧化錫(FTO)基板、氧化鈦緻密層、多孔質氧化鋁層、含有本實施形態之化合物或組合物之活性層、2,2',7,7'-四(N,N'-二-對甲氧基苯胺)-9,9'-螺二茀(Spiro-MeOTAD)等電洞傳輸層、及銀(Ag)電極之太陽電池。 氧化鈦緻密層具有電子傳輸之功能、抑制FTO之粗糙度之效果、及抑制反向電子轉移之功能。 多孔質氧化鋁層具有提高光吸收效率之功能。 活性層中所含之本實施形態之化合物或組合物具有電荷分離及電子傳輸之功能。<Solar cell> The compound or composition of the present embodiment can be used as an electron transport material contained in the active layer of a solar cell. The composition of the above-mentioned solar cell is not particularly limited, and examples thereof include: a solar cell having, in order, a fluorine-doped tin oxide (FTO) substrate, a titanium oxide dense layer, a porous aluminum oxide layer, an active layer containing the compound or composition of the present embodiment, a hole transport layer such as 2,2',7,7'-tetrakis(N,N'-di-p-methoxyaniline)-9,9'-spirobifluorene (Spiro-MeOTAD), and a silver (Ag) electrode. The titanium oxide dense layer has the function of electron transport, the effect of suppressing the roughness of FTO, and the function of suppressing reverse electron transfer. The porous alumina layer has the function of improving light absorption efficiency. The compound or composition of the present embodiment contained in the active layer has the functions of charge separation and electron transport.

<膜之製造方法> 膜之製造方法例如可列舉下述(e1)~(e3)之製造方法。<Methods for producing membranes> Methods for producing membranes include, for example, the following methods (e1) to (e3).

製造方法(e1):包括塗佈液狀組合物而獲得塗膜之步驟、及自塗膜去除(3)溶劑之步驟之膜之製造方法。Production method (e1): A method for producing a film comprising the steps of applying a liquid composition to obtain a coating film, and removing (3) the solvent from the coating film.

製造方法(e2):包括塗佈含有(4)聚合性化合物之液狀組合物而獲得塗膜之步驟、及使所得之塗膜中所含之(4)聚合性化合物聚合之步驟之膜之製造方法。Production method (e2): A method for producing a film comprising the steps of applying a liquid composition containing (4) a polymerizable compound to obtain a coating film, and polymerizing the (4) polymerizable compound contained in the obtained coating film.

製造方法(e3):將藉由上述製造方法(d1)、(d2)而獲得之組合物進行成形加工之膜之製造方法。Production method (e3): A method for producing a film by molding the composition obtained by the above-mentioned production methods (d1) and (d2).

<積層構造體之製造方法> 積層構造體之製造方法例如可列舉下述(f1)~(f3)之製造方法。<Method for manufacturing a laminated structure> The method for manufacturing a laminated structure includes, for example, the following manufacturing methods (f1) to (f3).

製造方法(f1):包括製造液狀組合物之步驟、將所得之液狀組合物塗佈於基板上之步驟、及自所得之塗膜去除(3)溶劑之步驟之積層構造體之製造方法。Manufacturing method (f1): A method for manufacturing a layered structure, comprising the steps of preparing a liquid composition, coating the obtained liquid composition on a substrate, and removing (3) a solvent from the obtained coating film.

製造方法(f2):包括將膜貼合於基板之步驟之積層構造體之製造方法。Manufacturing method (f2): A method for manufacturing a multilayer structure, comprising the step of bonding a film to a substrate.

製造方法(f3):包括製造含有(4)聚合性化合物之液狀組合物之步驟、將所得之液狀組合物塗佈於基板上之步驟、及使所得之塗膜中所含之(4)聚合性化合物聚合之步驟之製造方法。Manufacturing method (f3): A manufacturing method comprising the steps of preparing a liquid composition containing a (4) polymerizable compound, coating the obtained liquid composition on a substrate, and polymerizing the (4) polymerizable compound contained in the obtained coating film.

製造方法(f1)、(f3)中之製造液狀組合物之步驟可採用上述製造方法(c1)~(c4)。The steps of preparing the liquid composition in the preparation methods (f1) and (f3) can adopt the above-mentioned preparation methods (c1) to (c4).

製造方法(f1)、(f3)中之將液狀組合物塗佈於基板上之步驟並無特別限制,可使用:凹版塗佈法、棒式塗佈法、印刷法、噴霧法、旋轉塗佈法、浸漬法、模嘴塗佈法等公知之塗佈、塗敷方法。The step of coating the liquid composition on the substrate in the manufacturing methods (f1) and (f3) is not particularly limited, and known coating and application methods such as gravure coating, rod coating, printing, spraying, rotary coating, dipping, and die-nozzle coating can be used.

製造方法(f1)中之去除(3)溶劑之步驟可為與上述製造方法(d2)中所含之去除(3)溶劑之步驟相同之步驟。The step of removing the solvent (3) in the production method (f1) may be the same step as the step of removing the solvent (3) in the above-mentioned production method (d2).

製造方法(f3)中之使(4)聚合性化合物聚合之步驟可為與上述製造方法(d1)中所含之使(4)聚合性化合物聚合之步驟相同之步驟。The step of polymerizing the polymerizable compound (4) in the production method (f3) may be the same step as the step of polymerizing the polymerizable compound (4) included in the above-mentioned production method (d1).

製造方法(f2)中之將膜貼合於基板之步驟中,可使用任意之接著劑。In the step of bonding the film to the substrate in the manufacturing method (f2), any adhesive may be used.

接著劑只要為不溶解(1)鈣鈦礦化合物者,則並無特別限制,可使用公知之接著劑。The adhesive is not particularly limited as long as it does not dissolve (1) the calcium-titanium compound, and any known adhesive can be used.

積層構造體之製造方法可包括於所得積層構造體進而貼合任意膜之步驟。The method for manufacturing a laminated structure may include a step of further bonding an arbitrary film to the obtained laminated structure.

作為貼合之任意膜,例如可列舉:反射膜、擴散膜。Examples of the arbitrary film to be bonded include a reflective film and a diffusion film.

貼合膜之步驟中,可使用任意之接著劑。In the film lamination step, any adhesive may be used.

上述接著劑只要為不溶解本實施形態之化合物者,則並無特別限制,可使用公知之接著劑。The above-mentioned bonding agent is not particularly limited as long as it does not dissolve the compound of the present embodiment, and a known bonding agent can be used.

<發光裝置之製造方法> 例如可列舉:包含設置上述光源且於距離光源之後段之光路上設置上述化合物、上述組合物或積層構造體之步驟之製造方法。<Method for manufacturing a light-emitting device> For example, the method may include the steps of providing the above-mentioned light source and providing the above-mentioned compound, the above-mentioned combination or the multilayer structure on the optical path at the rear section of the light source.

再者,本發明之技術範圍並不限定於上述實施形態,可於不脫離本發明之主旨之範圍內添加各種變更。Furthermore, the technical scope of the present invention is not limited to the above-mentioned embodiments, and various modifications can be added without departing from the scope of the present invention.

<感測器> 本實施形態之化合物或組合物可用作X射線攝像裝置及CMOS(complementary metal oxide semiconductor,互補金氧半導體)影像感測器等固體攝像裝置用之影像檢測部(影像感測器)、指紋檢測部、面部檢測部、靜脈檢測部及虹膜檢測部等檢測生物體之一部分特定特徵之檢測部、脈搏血氧定量計(pulse oximeter)等光學生物感測器之檢測部中使用包含之光電轉換元件(光檢測元件)材料。 [實施例]<Sensor> The compound or composition of this embodiment can be used as an image detection unit (image sensor) for solid-state imaging devices such as X-ray imaging devices and CMOS (complementary metal oxide semiconductor) image sensors, a detection unit for detecting a specific feature of a part of a biological body such as a fingerprint detection unit, a face detection unit, a vein detection unit, and an iris detection unit, and a photoelectric conversion element (photodetection element) material contained in the detection unit of an optical biosensor such as a pulse oximeter. [Example]

以下,基於實施例及比較例更具體說明本發明,但本發明不限定於以下實施例。Hereinafter, the present invention will be described in more detail based on embodiments and comparative examples, but the present invention is not limited to the following embodiments.

((1)鈣鈦礦化合物之固形物成分濃度測定) 實施例5中獲得之組合物中之鈣鈦礦化合物之固形物成分濃度係分別將藉由再分散而獲得之含有鈣鈦礦化合物及溶劑之分散液於105℃下乾燥3小時後,測定殘存之質量,應用於下述式1中而算出。 固形物成分濃度(質量%)=乾燥後之質量÷乾燥前之質量×100・・・式1((1) Determination of solid content concentration of calcium-titanium compound) The solid content concentration of the calcium-titanium compound in the composition obtained in Example 5 was calculated by measuring the residual mass of the dispersion containing the calcium-titanium compound and the solvent obtained by redispersion at 105°C for 3 hours and applying it to the following formula 1. Solid content concentration (mass %) = mass after drying ÷ mass before drying × 100...Formula 1

(添加水之質量MW 之測定) 添加水之質量MW 係使用微量水分測定裝置(AQ-2000,平沼產業公司製造,酮系電解液Hydranal-Coulomat AK)而測定。(Measurement of the mass M W of added water) The mass M W of added water was measured using a trace water content measuring device (AQ-2000, manufactured by Hiranuma Sangyo Co., Ltd., ketone electrolyte Hydranal-Coulomat AK).

(發光光譜之半值寬、吸收率及發光波長之測定) 使用絕對PL量子產率測定裝置(Hamamatsu Photonics股份有限公司製造,C9920-02),於激發光450 nm、室溫、大氣下測定實施例1~5及比較例1中獲得之化合物之發光光譜之半值寬及發光波長。(Measurement of half-value width of luminescence spectrum, absorbance and luminescence wavelength) Using an absolute PL quantum yield measuring device (manufactured by Hamamatsu Photonics Co., Ltd., C9920-02), the half-value width of the luminescence spectrum and the luminescence wavelength of the compounds obtained in Examples 1 to 5 and Comparative Example 1 were measured at an excitation light of 450 nm, room temperature and atmosphere.

((hkl)=(001)之半值寬測定) 藉由X射線結構繞射(XRD,CuKα射線=1.5458λ,X'pert PRO MPD,Spectris公司製造)測定實施例1~5及比較例1中獲得之化合物後,測定(hkl)=(001)之波峰之半值寬。(hkl)=(001)之波峰之半值寬係使用綜合粉末X射線解析軟體PDXL(Rigaku公司製造)而算出。(Measurement of half-value width of (hkl) = (001)) After measuring the compounds obtained in Examples 1 to 5 and Comparative Example 1 by X-ray structure diffraction (XRD, CuKα ray = 1.5458λ, X'pert PRO MPD, manufactured by Spectris), the half-value width of the peak of (hkl) = (001) was measured. The half-value width of the peak of (hkl) = (001) was calculated using the integrated powder X-ray analysis software PDXL (manufactured by Rigaku).

(平均粒徑測定) 藉由穿透式電子顯微鏡(日本電子股份有限公司製造,JEM-2200FS)觀察實施例1~5及比較例1中獲得之化合物。將分別含有實施例1~5及比較例1中獲得之化合物之組合物澆鑄於TEM專用之附有支持膜之柵上,使之自然乾燥,對由此獲得者以加速電壓200 kV進行觀察。又,於觀察察視野中,亦進行能量分散型X射線分析(日本電子股份有限公司製造,JED-2300),獲得元素映射圖像。(Average particle size measurement) The compounds obtained in Examples 1 to 5 and Comparative Example 1 were observed using a transmission electron microscope (manufactured by JEOL Ltd., JEM-2200FS). The compositions containing the compounds obtained in Examples 1 to 5 and Comparative Example 1 were cast on a grid with a support film for TEM, dried naturally, and observed at an accelerating voltage of 200 kV. In addition, energy dispersive X-ray analysis (manufactured by JEOL Ltd., JED-2300) was performed in the observation field to obtain elemental mapping images.

實施例1~5及比較例1中獲得之鈣鈦礦化合物之平均粒徑係使用圖像解析軟體Image J而算出。獲得將各組合物之TEM圖像中之實施例1~5及比較例1中獲得之化合物分別作為黑色,其以外作為白色而轉換之二值化處理完畢圖像。此時,與藉由TEM-EDX測定而獲得之元素映射圖像比較,確認可將檢測出分別源自實施例1~5及比較例1中獲得之鈣鈦礦化合物之成分之位置轉換為黑色。對上述二值化處理完畢圖像,測定鈣鈦礦化合物之尺寸。 平均粒徑係自隨機選擇之300個鈣鈦礦化合物之製為立方體或長方體之粒子之最長邊之長度之平均而算出。The average particle size of the calcium-titanium compound obtained in Examples 1 to 5 and Comparative Example 1 was calculated using the image analysis software Image J. A binary image was obtained in which the compounds obtained in Examples 1 to 5 and Comparative Example 1 in the TEM image of each composition were converted to black and the rest to white. At this time, by comparing with the element mapping image obtained by TEM-EDX measurement, it was confirmed that the positions of the components derived from the calcium-titanium compound obtained in Examples 1 to 5 and Comparative Example 1 could be detected and converted to black. The size of the calcium-titanium compound was measured for the above binary image. The average particle size is calculated from the average length of the longest side of 300 randomly selected particles of calcium-titanium compounds in the form of cubes or cuboids.

[實施例1] 將油胺25 mL及乙醇200 mL混合後,一面冰浴冷卻一面攪拌,添加氫溴酸溶液(48%)17.12 mL後,減壓乾燥而獲得沈澱。對沈澱使用二乙醚洗淨後,加壓乾燥而獲得溴化油基銨。[Example 1] After mixing 25 mL of oleylamine and 200 mL of ethanol, the mixture was stirred while being cooled in an ice bath, and 17.12 mL of a hydrobromic acid solution (48%) was added, followed by drying under reduced pressure to obtain a precipitate. The precipitate was washed with diethyl ether, and then dried under reduced pressure to obtain oleylammonium bromide.

對溴化油基銨21 g混合甲苯200 mL後,以相對於下述三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為0.58之方式於含有溴化油基銨之溶液中添加水,製備含有溴化油基銨之溶液53.4 mL。 將三水合乙酸鉛1.52 g、甲脒乙酸鹽1.56 g、1-十八碳烯之溶劑160 mL及油酸40 mL混合。加以攪拌,一面流通氮氣一面加熱至130℃後,添加上述含有溴化油基銨及水之溶液53.4 mL。添加後將溶液降溫至室溫,獲得含有(1)鈣鈦礦化合物之分散液1。After mixing 21 g of oleylammonium bromide with 200 mL of toluene, water was added to the solution containing oleylammonium bromide in such a manner that the ratio of water (g) to lead (g) became 0.58 relative to the mass (g) of lead in the following lead acetate trihydrate (a raw material containing lead as the metal element M), thereby preparing 53.4 mL of a solution containing oleylammonium bromide. 1.52 g of lead acetate trihydrate, 1.56 g of formamidine acetate, 160 mL of a solvent of 1-octadecene, and 40 mL of oleic acid were mixed. After stirring, the mixture was heated to 130°C while nitrogen was flowing, and then 53.4 mL of the solution containing oleylammonium bromide and water was added. After the addition, the solution was cooled to room temperature to obtain a dispersion 1 containing (1) a calcium-titanium compound.

若評價對分散液1.50 μL混合甲苯3.95 mL所得之溶液之發光特性,則發光光譜之半值寬為20.93 nm,激發光之吸收率為0.65,發光波長為541 nm。If the luminescence characteristics of a solution obtained by mixing 1.50 μL of the dispersion with 3.95 mL of toluene are evaluated, the half-value width of the luminescence spectrum is 20.93 nm, the absorptivity of the excitation light is 0.65, and the luminescence wavelength is 541 nm.

將對200 mL之上述分散液1混合甲苯100 mL及乙腈50 mL所得之溶液藉由過濾而固液分離。其後,對過濾上之固形物成分沖洗甲苯100 mL及乙腈50 mL之混合溶液2次,加以過濾。藉此,獲得(1)鈣鈦礦化合物。200 mL of the above dispersion 1 was mixed with 100 mL of toluene and 50 mL of acetonitrile to obtain a solution to separate solid from liquid by filtration. Thereafter, the solid component on the filter was washed twice with a mixed solution of 100 mL of toluene and 50 mL of acetonitrile and filtered. Thus, (1) a calcium-titanium compound was obtained.

將所得(1)鈣鈦礦化合物以甲苯100 mL分散,獲得分散液2。將分散液2於50 μL無反射板上澆鑄、乾燥後,進行XRD測定,結果為XRD光譜於2θ=14~15°之位置具有源自(hkl)=(001)之波峰。測定之(hkl)=(001)之半值寬為0.272。根據測定結果,確認回收之(1)鈣鈦礦化合物為具有三維鈣鈦礦型晶體結構之化合物。藉由TEM而測定之平均粒徑為14.6 nm。The obtained (1) calcium titanite compound was dispersed in 100 mL of toluene to obtain dispersion 2. Dispersion 2 was cast on a 50 μL non-reflective plate, dried, and then subjected to XRD measurement. The result showed that the XRD spectrum had a peak originating from (hkl) = (001) at 2θ = 14-15°. The half-value width of (hkl) = (001) was measured to be 0.272. Based on the measurement results, it was confirmed that the recovered (1) calcium titanite compound was a compound having a three-dimensional calcium titanite crystal structure. The average particle size measured by TEM was 14.6 nm.

[實施例2] 除將鈣鈦礦化合物之製造步驟中之含有溴化油基銨之溶液之水分量設為相對於三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為1.13以外,以與實施例1相同之方法獲得分散液。(hkl)=(001)之半值寬為0.232。又,發光光譜之半值寬為20.68 nm,激發光之吸收率為0.72,發光波長為541 nm。藉由TEM而測定之平均粒徑為21.6 nm。[Example 2] Except that the water content of the solution containing oleylammonium bromide in the production step of the calcium-titanium compound was set to 1.13 relative to the mass (g) of lead in lead acetate trihydrate (a raw material containing lead as the metal element M), a dispersion was obtained in the same manner as in Example 1. The half-value width of (hkl) = (001) was 0.232. In addition, the half-value width of the luminescence spectrum was 20.68 nm, the absorptivity of the excitation light was 0.72, and the luminescence wavelength was 541 nm. The average particle size measured by TEM was 21.6 nm.

[實施例3] 除將鈣鈦礦化合物之製造步驟中之含有溴化油基銨之溶液之水分量設為相對於三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為1.69以外,以與實施例1相同之方法獲得分散液。(hkl)=(001)之半值寬為0.213。又,發光光譜之半值寬為20.15 nm,激發光之吸收率為0.65,發光波長為542 nm。藉由TEM而測定之平均粒徑為18.4 nm。[Example 3] Except that the water content of the solution containing oleylammonium bromide in the production step of the calcium-titanium compound was set to 1.69 relative to the mass (g) of lead in lead acetate trihydrate (a raw material containing lead as the metal element M), a dispersion was obtained in the same manner as in Example 1. The half-value width of (hkl) = (001) was 0.213. In addition, the half-value width of the luminescence spectrum was 20.15 nm, the absorptivity of the excitation light was 0.65, and the luminescence wavelength was 542 nm. The average particle size measured by TEM was 18.4 nm.

[實施例4] 除將鈣鈦礦化合物之製造步驟中之含有溴化油基銨之溶液之水分量設為相對於三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為2.25以外,以與實施例1相同之方法獲得分散液。(hkl)=(001)之半值寬為0.150。又,發光光譜之半值寬為20.16 nm,激發光之吸收率為0.29,發光波長為539 nm。藉由TEM而測定之平均粒徑為26.6 nm。[Example 4] A dispersion was obtained in the same manner as in Example 1 except that the water content of the solution containing oleylammonium bromide in the step of producing the calcium-titanium compound was set to 2.25 relative to the mass (g) of lead in lead acetate trihydrate (a raw material containing lead as the metal element M). The half-value width of (hkl) = (001) was 0.150. In addition, the half-value width of the luminescence spectrum was 20.16 nm, the absorptivity of the excitation light was 0.29, and the luminescence wavelength was 539 nm. The average particle size measured by TEM was 26.6 nm.

[實施例5] 將油胺25 mL及乙醇200 mL混合後,一面冰浴冷卻一面攪拌,一面添加氫溴酸溶液(48%)17.12 mL後,減壓乾燥而獲得沈澱。對沈澱使用二乙醚洗淨後,加壓乾燥而獲得溴化油基銨。[Example 5] After mixing 25 mL of oleylamine and 200 mL of ethanol, add 17.12 mL of hydrobromic acid solution (48%) while stirring in an ice bath, and then dry under reduced pressure to obtain a precipitate. The precipitate is washed with diethyl ether and dried under reduced pressure to obtain oleylammonium bromide.

對溴化油基銨21 g混合甲苯200 mL後,以相對於下述三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為1.69之方式於含有溴化油基銨之溶液中添加水,製備含有溴化油基銨之溶液。 將三水合乙酸鉛1.52 g、甲脒乙酸鹽1.56 g、1-十八碳烯之溶劑160 mL及油酸40 mL混合。加以攪拌,一面流通氮氣一面加熱至130℃後,添加上述含有溴化油基銨及水之溶液53.4 mL。添加後將溶液降溫至室溫,獲得含有(1)鈣鈦礦化合物之分散液3。藉由TEM而測定之平均粒徑為18.4 nm。After mixing 21 g of oleylammonium bromide with 200 mL of toluene, water was added to the solution containing oleylammonium bromide in such a manner that the ratio of water (g) to lead (g) became 1.69 relative to the mass (g) of lead in the following lead acetate trihydrate (a raw material containing lead as the metal element M), thereby preparing a solution containing oleylammonium bromide. 1.52 g of lead acetate trihydrate, 1.56 g of formamidine acetate, 160 mL of a solvent of 1-octadecene, and 40 mL of oleic acid were mixed. After stirring, the mixture was heated to 130°C while nitrogen was flowing, and then 53.4 mL of the solution containing oleylammonium bromide and water was added. After the addition, the solution was cooled to room temperature to obtain a dispersion 3 containing (1) a calcium-titanium compound. The average particle size measured by TEM was 18.4 nm.

將對200 mL之上述分散液3混合甲苯100 mL及乙腈50 mL所得之溶液藉由過濾而固液分離。其後,對過濾上之固形物成分沖洗甲苯100 mL及乙腈50 mL之混合溶液2次,加以過濾。藉此,獲得(1)鈣鈦礦化合物。200 mL of the above dispersion 3 was mixed with 100 mL of toluene and 50 mL of acetonitrile to obtain a solution to separate solid from liquid by filtration. Thereafter, the solid component on the filter was washed twice with a mixed solution of 100 mL of toluene and 50 mL of acetonitrile and filtered. Thus, (1) a calcium-titanium compound was obtained.

將所得(1)鈣鈦礦化合物以甲苯100 mL分散,獲得分散液4。將分散液4於50 μL無反射板上澆鑄、乾燥後,進行XRD測定,結果為XRD光譜於2θ=14~15°之位置具有源自(hkl)=(001)之波峰。測定之(hkl)=(001)之半值寬為0.213。根據測定結果,確認回收之(1)鈣鈦礦化合物為具有三維鈣鈦礦型晶體結構之化合物。The obtained (1) calcium titanite compound was dispersed in 100 mL of toluene to obtain dispersion 4. Dispersion 4 was cast on a 50 μL non-reflective plate, dried, and then subjected to XRD measurement. The result showed that the XRD spectrum had a peak originating from (hkl) = (001) at the position of 2θ = 14-15°. The half-value width of (hkl) = (001) was measured to be 0.213. Based on the measurement results, it was confirmed that the recovered (1) calcium titanite compound was a compound having a three-dimensional calcium titanite crystal structure.

將上述鈣鈦礦化合物與二甲苯混合,以固形物成分濃度成為0.9質量%之方式製備185 mL之分散液5。於其中添加相對於分散液5中之1質量份之鈣鈦礦化合物為2質量份之有機聚矽氮烷(1500 Slow Cure,Durazane,Merck Performance Materials股份有限公司製造)。若藉由上述方法測定發光光譜之半值寬,則為20.60 nm,發光波長為538 nm。The above calcium-titanium compound was mixed with xylene to prepare 185 mL of dispersion 5 in a manner such that the solid content concentration was 0.9 mass %. Two mass parts of organic polysilazane (1500 Slow Cure, Durazane, manufactured by Merck Performance Materials Co., Ltd.) were added thereto relative to one mass part of the calcium-titanium compound in dispersion 5. When the half-value width of the luminescence spectrum was measured by the above method, it was 20.60 nm, and the luminescence wavelength was 538 nm.

[比較例1] 除將鈣鈦礦化合物之製造步驟中之含有溴化油基銨之溶液之水分量設為相對於三水合乙酸鉛(含有鉛作為金屬元素M之原料)中之鉛之質量(g),水(g)/鉛(g)成為0.046以外,以與實施例1相同之方法獲得分散液。再者,上述水並非刻意添加者,而係源自原料中所含之水分之水。 若藉由上述方法算出(hkl)=(001)之半值寬,則為0.600。若藉由上述方法測定發光光譜之半值寬,則為24.30 nm,激發光之吸收率為0.64,發光波長為535 nm。藉由TEM而測定之平均粒徑為13.1 nm。[Comparative Example 1] The dispersion was obtained in the same manner as in Example 1 except that the water content of the solution containing oleylammonium bromide in the step of producing the calcium-titanium compound was set to 0.046 relative to the mass (g) of lead in lead acetate trihydrate (a raw material containing lead as the metal element M). Furthermore, the water was not intentionally added but was derived from the water contained in the raw material. If the half-value width of (hkl) = (001) is calculated by the above method, it is 0.600. If the half-value width of the luminescence spectrum is measured by the above method, it is 24.30 nm, the absorptivity of the excitation light is 0.64, and the luminescence wavelength is 535 nm. The average particle size measured by TEM is 13.1 nm.

實施例1~5、比較例1之結果示於表1。The results of Examples 1 to 5 and Comparative Example 1 are shown in Table 1.

[表1]    半值寬 [(hkl)=(001)] 發光光譜之半值寬 nm 實施例1 0.272 20.93 實施例2 0.232 20.68 實施例3 0.213 20.15 實施例4 0.150 20.16 實施例5 0.213 20.60 比較例1 0.600 24.30 [Table 1] Half value width [(hkl) = (001)] Half-value width of luminescence spectrum (nm) Embodiment 1 0.272 20.93 Embodiment 2 0.232 20.68 Embodiment 3 0.213 20.15 Embodiment 4 0.150 20.16 Embodiment 5 0.213 20.60 Comparison Example 1 0.600 24.30

自上述結果可確認:應用本發明之實施例1~5之鈣鈦礦化合物與未應用本發明之比較例1之鈣鈦礦化合物相比,發光光譜之半值寬較窄。From the above results, it can be confirmed that the calcium-titanium compounds of Examples 1 to 5 of the present invention have narrower half-widths of luminescence spectra than the calcium-titanium compound of Comparative Example 1 to which the present invention is not applied.

[參考例1] 製造如下背光源:將實施例1~5中記載之化合物或組合物裝入玻璃管等中並密封後,將其配置於作為光源之藍色發光二極體與導光板之間,藉此可將藍色發光二極體之藍色光轉換為綠色光或紅色光。[Reference Example 1] The following backlight source is manufactured: the compound or composition described in Examples 1 to 5 is placed in a glass tube or the like and sealed, and then arranged between a blue light emitting diode as a light source and a light guide plate, thereby converting the blue light of the blue light emitting diode into green light or red light.

[參考例2] 製造如下背光源:可藉由將實施例1~5中記載之化合物或組合物片材化而獲得樹脂組合物,將其以2張障壁膜夾持並密封而獲得膜,將該膜設置於導光板上,藉此可將自置於導光板之端面(側面)之藍色發光二極體經過導光板而照射至上述片材之藍色光轉換為綠色光或紅色光。[Reference Example 2] The following backlight source is manufactured: a resin composition can be obtained by forming a sheet of the compound or composition described in Examples 1 to 5, and the resin composition is sandwiched and sealed with two barrier films to obtain a film, and the film is placed on a light guide plate, thereby converting the blue light from the blue light-emitting diode placed on the end face (side face) of the light guide plate through the light guide plate and irradiating the above-mentioned sheet into green light or red light.

[參考例3] 製造如下背光源:可藉由將實施例1~5中記載之化合物或組合物設置於藍色發光二極體之發光部附近,而將照射之藍色光轉換為綠色光或紅色光。[Reference Example 3] The following backlight source is manufactured: the compound or composition described in Examples 1 to 5 is placed near the light-emitting portion of a blue light-emitting diode, thereby converting the irradiated blue light into green light or red light.

[參考例4] 將實施例1~5中記載之化合物或組合物與阻劑混合後,去除溶劑,藉此可獲得波長轉換材料。製造如下背光源:可藉由將所得波長轉換材料配置於作為光源之藍色發光二極體與導光板之間或作為光源之OLED(Organic Light-Emitting Diode,有機發光二極體)之後段,而將光源之藍色光轉換為綠色光或紅色光。[Reference Example 4] After mixing the compound or composition described in Examples 1 to 5 with a resist, the solvent is removed to obtain a wavelength conversion material. The following backlight source is manufactured: the obtained wavelength conversion material can be arranged between a blue light-emitting diode as a light source and a light guide plate or in the rear section of an OLED (Organic Light-Emitting Diode) as a light source to convert the blue light of the light source into green light or red light.

[參考例5] 將實施例1~5中記載之化合物或組合物與ZnS等導電性粒子混合並成膜,於單面積層n型傳輸層,於另一單面積層p型傳輸層,藉此獲得LED。藉由流通電流,使p型半導體之電洞與n型半導體之電子於接合面之鈣鈦礦化合物中抵消電荷,藉此可發光。[Reference Example 5] The compounds or compositions described in Examples 1 to 5 are mixed with conductive particles such as ZnS and formed into films, with an n-type transmission layer on one surface and a p-type transmission layer on another surface, thereby obtaining an LED. By flowing current, the holes of the p-type semiconductor and the electrons of the n-type semiconductor cancel out the charges in the calcium-titanium compound at the junction, thereby emitting light.

[參考例6] 於摻雜有氟之氧化錫(FTO)基板之表面上積層氧化鈦緻密層,自其上積層多孔質氧化鋁層,於其上積層實施例1~5中記載之化合物或組合物,去除溶劑後,自其上積層2,2',7,7'-四(N,N'-二-對甲氧基苯胺)-9,9'-螺二茀(Spiro-OMeTAD)等電洞傳輸層,於其上積層銀(Ag)層,製作太陽電池。[Reference Example 6] A titanium oxide dense layer is deposited on the surface of a fluorine-doped tin oxide (FTO) substrate, a porous aluminum oxide layer is deposited thereon, a compound or composition described in Examples 1 to 5 is deposited thereon, after removing the solvent, a hole transport layer such as 2,2',7,7'-tetrakis(N,N'-di-p-methoxyaniline)-9,9'-spirobiphenylene (Spiro-OMeTAD) is deposited thereon, and a silver (Ag) layer is deposited thereon to prepare a solar cell.

[參考例7] 製造如下雷射二極體照明:藉由將實施例1~5中記載之化合物或組合物之溶劑去除並成形,可獲得本實施形態之組合物,將其設置於藍色發光二極體之後段,藉此將自藍色發光二極體照射至組合物之藍色光轉換為綠色光或紅色光而發出白色光。[Reference Example 7] Manufacture the following laser diode lighting: By removing the solvent of the compound or composition described in Examples 1 to 5 and forming it, the composition of this embodiment can be obtained, and it is set in the rear section of the blue light emitting diode, thereby converting the blue light irradiated from the blue light emitting diode to the composition into green light or red light to emit white light.

[參考例8] 可藉由將實施例1~5中記載之化合物或組合物之溶劑去除並成形而獲得本實施形態之組合物。藉由將所得組合物作為光電轉換層之一部分,而製造檢測光之檢測部中使用包含之光電轉換元件(光檢測元件)材料。光電轉換元件材料係用於X射線攝像裝置及CMOS影像感測器等固體攝像裝置用之影像檢測部(影像感測器)、指紋檢測部、面部檢測部、靜脈檢測部及虹膜檢測部等檢測生物體之一部分特定特徵之檢測部、脈搏血氧定量計等光學生物感測器。 [產業上之可利用性][Reference Example 8] The composition of this embodiment can be obtained by removing the solvent of the compound or composition described in Examples 1 to 5 and forming it. By using the obtained composition as a part of the photoelectric conversion layer, a photoelectric conversion element (photodetection element) material used in a detection unit for detecting light is manufactured. The photoelectric conversion element material is used in image detection units (image sensors) for solid-state imaging devices such as X-ray imaging devices and CMOS image sensors, fingerprint detection units, face detection units, vein detection units, iris detection units, etc., which detect specific features of a part of a biological body, and optical biosensors such as pulse oximeters. [Industrial Applicability]

根據本發明,可提供一種發光光譜之半值寬較窄之具有鈣鈦礦型晶體結構之化合物、含有上述化合物之組合物、以上述組合物作為形成材料之膜、含有上述膜之積層構造體、具備上述積層構造體之發光裝置及顯示器。 因此,本發明之具有鈣鈦礦型晶體結構之化合物、含有上述化合物之組合物、以上述組合物作為形成材料之膜、含有上述膜之積層構造體、及具備上述積層構造體之發光裝置及顯示器可較佳地用於發光用途。According to the present invention, a compound having a calcite-tantalum crystal structure with a narrow half-value width of the luminescence spectrum, a composition containing the above compound, a film formed by the above composition, a laminated structure containing the above film, a luminescent device and a display having the above laminated structure can be provided. Therefore, the compound having a calcite-tantalum crystal structure, the composition containing the above compound, the film formed by the above composition, the laminated structure containing the above film, and the luminescent device and display having the above laminated structure of the present invention can be preferably used for luminescence purposes.

本發明又包含下述[1]~[28]。 [1]一種鈣鈦礦集合體,其係於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60,且以A、B及X作為構成成分之具有鈣鈦礦型晶體結構之化合物集合複數個而構成者。 (A係於鈣鈦礦型晶體結構中,位於以B為中心之6面體之各頂點之成分,係1價陽離子; X係於鈣鈦礦型晶體結構中,位於以B為中心之8面體之各頂點之成分,係選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子; B係於鈣鈦礦型晶體結構中,位於以A為頂點所配置之6面體及以X為頂點所配置之8面體之中心之成分,係金屬離子) [2]如[1]之鈣鈦礦集合體,其中上述密勒指數(001)之波峰之半值寬為0.15以上且未達0.60。 [3]如[1]之鈣鈦礦集合體,其中上述密勒指數(001)之波峰之半值寬為0.15以上0.28以下。 [4]如[1]至[3]中任一項之鈣鈦礦集合體,其中上述B為2價之金屬離子。 [5]如[1]至[4]中任一項之鈣鈦礦集合體,其中上述B為選自由鉛離子、錫離子、銻離子、鉍離子及銦離子所組成之群中之金屬離子。 [6]如[1]至[5]中任一項之鈣鈦礦集合體,其包含選自由鉛離子、錫離子、銻離子、鉍離子及銦離子所組成之群中之一種以上之金屬離子。 [7]如[1]至[6]中任一項之鈣鈦礦集合體,其中上述B為鉛離子。 [8]如[1]至[7]中任一項之鈣鈦礦集合體,其中上述化合物包含選自由銫離子、有機銨離子及脒鎓離子所組成之群中之一種以上之一價陽離子。 [9]如[1]至[8]中任一項之鈣鈦礦集合體,其中上述X為選自由氯化物離子、溴化物離子、氟化物離子及碘化物離子所組成之群中之一種以上之鹵化物離子。 [10]如[1]至[8]中任一項之鈣鈦礦集合體,其中上述X為一個以上之硫氰酸根離子。 [11]如[9]之鈣鈦礦集合體,其中上述X為溴化物離子。 [12]一種組合物,其係含有如[1]至[11]中任一項之鈣鈦礦集合體以及選自由下述(2-1)、下述(2-1)之改質體、下述(2-2)及下述(2-2)之改質體所組成之群中之至少一個化合物者。 (2-1)矽氮烷 (2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物 [13]一種組合物,其係含有如[1]至[11]中任一項之鈣鈦礦集合體以及選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種者。 (3)溶劑 (4)聚合性化合物 (5)聚合物 [14]如[12]之組合物,其進而含有選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種。 (3)溶劑 (4)聚合性化合物 (5)聚合物 [15]一種膜,其係含有如[1]至[11]中任一項之鈣鈦礦集合體者。 [16]一種膜,其係以如[12]至[14]中任一項之組合物作為形成材料者。 [17]一種積層構造體,其含有如[15]或[16]之膜。 [18]一種發光裝置,其具備如[17]之積層構造體。 [19]一種顯示器,其具備如[17]之積層構造體。 [20]一種集合體之製造方法,其係包括將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者之原料與水混合之步驟、及於上述水之存在下使上述原料反應之步驟的半導體化合物之製造方法,上述集合體係含有金屬元素M之半導體化合物複數個集合而構成,該半導體化合物係上述水之質量WW 相對於上述原料中所含之金屬元素M之質量WM 之比即(WW /WM )為0.05~100且於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60。 [21]如[20]之製造方法,其中上述集合體係如[1]至[11]中任一項之鈣鈦礦集合體。 [22]如[20]或[21]之製造方法,其包括將選自由下述(2-1)、下述(2-1)之改質體、下述(2-2)及下述(2-2)之改質體所組成之群中之至少一個化合物混合之步驟。 (2-1)矽氮烷 (2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物 [23]如[20]或[21]之製造方法,其包括將聚矽氮烷混合之步驟。 [24]如[20]或[24]之製造方法,其進而包括將選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種混合之步驟。 (3)溶劑 (4)聚合性化合物 (5)聚合物 [25]如[20]至[24]中任一項之製造方法,其中上述集合體為膜之形成材料。 [26]如[25]之製造方法,其中上述膜包含於積層構造體中。 [27]如[26]之製造方法,其中上述積層構造體用於發光裝置。 [28]如[26]之製造方法,其中上述積層構造體用於顯示器。The present invention also includes the following [1] to [28]. [1] A calcite aggregate, wherein in an X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane is greater than 0.10 and less than 0.60, and the aggregate is composed of a plurality of compounds having a calcite type crystal structure and having A, B and X as constituent components. (A is a component located at each vertex of a hexahedron with B as the center in the calcite-titanoic crystal structure, and is a monovalent cation; X is a component located at each vertex of an octahedron with B as the center in the calcite-titanoic crystal structure, and is at least one anion selected from the group consisting of halide ions and thiocyanate ions; B is a component located at the center of a hexahedron with A as the vertex and an octahedron with X as the vertex in the calcite-titanoic crystal structure, and is a metal ion) [2] A calcite-titanoic aggregate as in [1], wherein the half-value width of the peak of the above-mentioned Miller index (001) is greater than 0.15 and less than 0.60. [3] The calcium-titanium aggregate of [1], wherein the half-value width of the peak of the Miller index (001) is not less than 0.15 and not more than 0.28. [4] The calcium-titanium aggregate of any one of [1] to [3], wherein the B is a divalent metal ion. [5] The calcium-titanium aggregate of any one of [1] to [4], wherein the B is a metal ion selected from the group consisting of lead ions, tin ions, antimony ions, bismuth ions and indium ions. [6] The calcium-titanium aggregate of any one of [1] to [5], comprising one or more metal ions selected from the group consisting of lead ions, tin ions, antimony ions, bismuth ions and indium ions. [7] The calcium-titanium aggregate of any one of [1] to [6], wherein B is a lead ion. [8] The calcium-titanium aggregate of any one of [1] to [7], wherein the compound comprises one or more valence cations selected from the group consisting of cesium ions, organic ammonium ions and amidinium ions. [9] The calcium-titanium ore aggregate of any one of [1] to [8], wherein the above X is one or more halide ions selected from the group consisting of chloride ions, bromide ions, fluoride ions and iodide ions. [10] The calcium-titanium ore aggregate of any one of [1] to [8], wherein the above X is one or more thiocyanate ions. [11] The calcium-titanium ore aggregate of [9], wherein the above X is a bromide ion. [12] A composition comprising the calcium-titanium ore aggregate of any one of [1] to [11] and at least one compound selected from the group consisting of the following (2-1), the following modified product of (2-1), the following (2-2) and the following modified product of (2-2). (2-1) Silazane (2-2) A silicon compound [13] having at least one group selected from the group consisting of an amino group, an alkoxy group and an alkylthio group, which comprises a calcium-titanium aggregate as described in any one of [1] to [11] and at least one selected from the group consisting of the following (3), the following (4) and the following (5). (3) Solvent (4) Polymerizable compound (5) Polymer [14] A composition as described in [12], which further comprises at least one selected from the group consisting of the following (3), the following (4) and the following (5). (3) Solvent (4) Polymerizable compound (5) Polymer [15] A membrane comprising a calcium-titanium aggregate as described in any one of [1] to [11]. [16] A film formed of a composition as described in any one of [12] to [14]. [17] A laminated structure comprising a film as described in [15] or [16]. [18] A light-emitting device having a laminated structure as described in [17]. [19] A display having a laminated structure as described in [17]. [20] A method for producing an aggregate, comprising the steps of mixing raw materials of either or both of a simple substance containing a metal element M and a compound containing a metal element M with water, and reacting the raw materials in the presence of the water, wherein the aggregate is composed of a plurality of aggregates of semiconductor compounds containing the metal element M, wherein the ratio of the mass W W of the water to the mass W M of the metal element M contained in the raw materials, i.e. (W W /W M ), is 0.05 to 100, and in the X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane is greater than 0.10 and less than 0.60. [21] The method of [20], wherein the aggregate is a calcium-titanium ore aggregate as described in any one of [1] to [11]. [22] The method of production as described in [20] or [21], comprising the step of mixing at least one compound selected from the group consisting of (2-1), a modified product of (2-1), (2-2), and a modified product of (2-2). (2-1) Silazane (2-2) A silicon compound having at least one group selected from the group consisting of an amino group, an alkoxy group, and an alkylthio group. [23] The method of production as described in [20] or [21], comprising the step of mixing a polysilazane. [24] The method of production as described in [20] or [24], further comprising the step of mixing at least one compound selected from the group consisting of (3), (4), and (5). (3) Solvent (4) Polymerizable compound (5) Polymer [25] The method of any one of [20] to [24], wherein the aggregate is a film-forming material. [26] The method of [25], wherein the film is contained in a multilayer structure. [27] The method of [26], wherein the multilayer structure is used in a light-emitting device. [28] The method of [26], wherein the multilayer structure is used in a display.

1a:第1積層構造體 1b:第2積層構造體 2:發光裝置 3:顯示器 10:膜 20:第1基板 21:第2基板 22:密封層 30:光源 40:液晶面板 50:稜鏡片 60:導光板1a: 1st layer structure 1b: 2nd layer structure 2: Light-emitting device 3: Display 10: Film 20: 1st substrate 21: 2nd substrate 22: Sealing layer 30: Light source 40: Liquid crystal panel 50: Prism 60: Light guide plate

圖1係表示本發明之積層構造體之一實施形態之截面圖。 圖2係表示本發明之顯示器之一實施形態之截面圖。FIG1 is a cross-sectional view showing one embodiment of the multilayer structure of the present invention. FIG2 is a cross-sectional view showing one embodiment of the display of the present invention.

1b:第2積層構造體 1b: Second layer structure

2:發光裝置 2: Light-emitting device

3:顯示器 3: Display

10:膜 10: Membrane

20:第1基板 20: 1st substrate

21:第2基板 21: Second substrate

22:密封層 22: Sealing layer

30:光源 30: Light source

40:液晶面板 40: LCD panel

50:稜鏡片 50: Prism

60:導光板 60: Light guide plate

Claims (11)

一種化合物,其係具有鈣鈦礦型晶體結構者,且於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60,並以A、B及X作為構成成分;(A係於鈣鈦礦型晶體結構中,位於以B為中心之6面體之各頂點之成分,係1價陽離子;X係於鈣鈦礦型晶體結構中,位於以B為中心之8面體之各頂點之成分,係選自由鹵化物離子及硫氰酸根離子所組成之群中之至少一種陰離子;B係於鈣鈦礦型晶體結構中,位於以A為頂點所配置之6面體及以X為頂點所配置之8面體之中心之成分,係金屬離子)。 A compound having a calcite-type crystal structure, wherein in an X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane is greater than 0.10 and less than 0.60, and the compound has A, B and X as constituent components; (A is a component located at each vertex of a hexahedron with B as the center in the calcite-type crystal structure, and is a monovalent cation; X is a component located at each vertex of an octahedron with B as the center in the calcite-titanoic crystal structure, and is at least one anion selected from the group consisting of halide ions and thiocyanate ions; B is a component located at the center of a hexahedron with A as the vertex and an octahedron with X as the vertex in the calcite-titanoic crystal structure, and is a metal ion). 如請求項1之化合物,其具有三維結構。 The compound of claim 1 has a three-dimensional structure. 一種組合物,其係含有如請求項1或2之化合物、及選自由下述(2-1)、下述(2-1)之改質體、下述(2-2)及下述(2-2)之改質體所組成之群中之至少一個化合物者;(2-1)矽氮烷(2-2)具有選自由胺基、烷氧基及烷硫基所組成之群中之至少一個基之矽化合物。 A composition comprising a compound as claimed in claim 1 or 2, and at least one compound selected from the group consisting of (2-1), a modified form of (2-1), (2-2), and a modified form of (2-2); (2-1) silazane (2-2) a silicon compound having at least one group selected from the group consisting of an amino group, an alkoxy group, and an alkylthio group. 一種組合物,其係含有如請求項1或2之化合物、及選自由下述(3)、 下述(4)及下述(5)所組成之群中之至少一種者;(3)溶劑(4)聚合性化合物(5)聚合物。 A composition comprising a compound as claimed in claim 1 or 2, and at least one selected from the group consisting of the following (3), the following (4) and the following (5); (3) solvent (4) polymerizable compound (5) polymer. 如請求項3之組合物,其進而含有選自由下述(3)、下述(4)及下述(5)所組成之群中之至少一種;(3)溶劑(4)聚合性化合物(5)聚合物。 The composition of claim 3 further contains at least one selected from the group consisting of the following (3), the following (4) and the following (5); (3) solvent (4) polymerizable compound (5) polymer. 一種膜,其含有如請求項1或2之化合物。 A film containing the compound as claimed in claim 1 or 2. 一種膜,其以如請求項3至5中任一項之組合物作為形成材料。 A film formed from a composition as described in any one of claims 3 to 5. 一種積層構造體,其含有如請求項6或7之膜。 A layered structure comprising a membrane as claimed in claim 6 or 7. 一種發光裝置,其具備如請求項8之積層構造體。 A light-emitting device having a layered structure as claimed in claim 8. 一種顯示器,其具備如請求項8之積層構造體。 A display having a layered structure as claimed in claim 8. 一種半導體化合物之製造方法,其包括:將含有金屬元素M之單質及含有金屬元素M之化合物之任一者或兩者 之原料與水混合之步驟、及於上述水之存在下使上述原料反應之步驟,且該半導體化合物係上述水之質量WW相對於上述原料中所含之金屬元素M之質量WM之比即(WW/WM)為0.05~100且於X射線繞射圖案中,面之密勒指數(001)之波峰之半值寬為0.10以上且未達0.60之含有金屬元素M者。 A method for producing a semiconductor compound comprises: mixing raw materials of either or both of a simple substance containing a metal element M and a compound containing a metal element M with water, and reacting the raw materials in the presence of the water, wherein the ratio of the mass W W of the water to the mass W M of the metal element M contained in the raw materials (W W /W M ) is 0.05-100, and in an X-ray diffraction pattern, the half-value width of the peak of the Miller index (001) of the plane containing the metal element M is greater than 0.10 and less than 0.60.
TW109106444A 2019-03-01 2020-02-27 Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound TWI841690B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-037920 2019-03-01
JP2019037920 2019-03-01

Publications (2)

Publication Number Publication Date
TW202039792A TW202039792A (en) 2020-11-01
TWI841690B true TWI841690B (en) 2024-05-11

Family

ID=72338666

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109106444A TWI841690B (en) 2019-03-01 2020-02-27 Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound

Country Status (4)

Country Link
JP (1) JP7470532B2 (en)
CN (1) CN113784925B (en)
TW (1) TWI841690B (en)
WO (1) WO2020179579A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201900757A (en) * 2017-05-17 2019-01-01 日商住友化學股份有限公司 Composition and composition manufacturing method
TW201903028A (en) * 2017-05-17 2019-01-16 日商住友化學股份有限公司 Film, method for producing composition, method for producing cured product, and method for producing film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104388089B (en) * 2014-11-04 2017-06-06 深圳Tcl新技术有限公司 A kind of preparation method of hydridization perovskite quanta point material
CN104861958B (en) * 2015-05-14 2017-02-15 北京理工大学 Perovskite/polymer composite luminescent material and preparation method thereof
JP6870432B2 (en) * 2016-03-31 2021-05-12 三菱ケミカル株式会社 Composite metal oxide particles, and dispersions using them, hybrid composite particles, hybrid composite materials, and optical materials.
CN107603614B (en) * 2017-09-12 2019-05-21 华中科技大学 A kind of preparation method of metal halide perovskite quantum dots
CN107954902A (en) * 2017-12-13 2018-04-24 合肥工业大学 A kind of hybrid inorganic-organic perovskite quantum dot fluorescence material of wide spectrum and preparation method thereof
CN108258157A (en) * 2018-01-22 2018-07-06 苏州大学 perovskite quantum dot and its synthetic method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201900757A (en) * 2017-05-17 2019-01-01 日商住友化學股份有限公司 Composition and composition manufacturing method
TW201903028A (en) * 2017-05-17 2019-01-16 日商住友化學股份有限公司 Film, method for producing composition, method for producing cured product, and method for producing film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
期刊 Protesescu, Loredana et al. Monodisperse Formamidinium Lead Bromide Nanocrystals with Bright and Stable Green Photoluminescence J. Am. Chem. Soc. 138 ACS 2016/10/13 14202-14205 *

Also Published As

Publication number Publication date
TW202039792A (en) 2020-11-01
CN113784925B (en) 2023-11-03
WO2020179579A1 (en) 2020-09-10
JP7470532B2 (en) 2024-04-18
JP2020142981A (en) 2020-09-10
CN113784925A (en) 2021-12-10

Similar Documents

Publication Publication Date Title
TWI871292B (en) Composition, film, laminated structure, light emitting device, and display
CN110088231A (en) Composition, film, laminate structure, light emitting device and display
US20210395608A1 (en) Particle, Composition, Film, Laminated Structure, Light-Emitting Device and Display
CN110114441B (en) Composition, film, laminated structure, light-emitting device, and display
CN112912444A (en) Composition, film, laminated structure, light-emitting device, and display
TWI830795B (en) Compositions, films, laminated structures, light-emitting devices and displays
TW202033734A (en) Composition, film, laminated structure, light-emitting device and display
CN112888763A (en) Particle, composition, film, laminated structure, light-emitting device, and display
TWI750285B (en) Composition, film, laminated structure, light emitting device, and display
TWI872029B (en) Composition, film, laminated structure, light emitting device, and display
TWI841690B (en) Compound, composition, film, laminated structure, light-emitting device, display and method for producing the compound
WO2022024804A1 (en) Light-emitting semiconductor compound and production method therefor