TWI739150B - Package structure of micro memory and package structure of memory - Google Patents
Package structure of micro memory and package structure of memory Download PDFInfo
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- H01Q1/12—Supports; Mounting means
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Abstract
Description
本發明是有關於一種記憶體封裝結構,且特別是有關於一種微型記憶體封裝結構以及記憶體封裝結構。The present invention relates to a memory packaging structure, and more particularly to a miniature memory packaging structure and a memory packaging structure.
隨著電子產業的蓬勃發展,電子產品亦朝著輕、薄、短、小、高積集度、多功能化方向發展。一般而言,封裝形式通常是用打線式(Wire Bonding)封裝,然而,此種封裝結構由於需使用較多打線(如金線),因此會需要預保留較大的打線空間且也會增加許多材料成本。因此,如何縮減整體尺寸且減少製作成本,將成為重要的一門課題。With the vigorous development of the electronic industry, electronic products are also developing in the direction of lightness, thinness, shortness, smallness, high integration, and multi-function. Generally speaking, the packaging form is usually wire bonding (Wire Bonding) packaging. However, this type of packaging structure requires more bonding wires (such as gold wires), so it will need to reserve a larger wire bonding space and also increase a lot. Material costs. Therefore, how to reduce the overall size and reduce the manufacturing cost will become an important issue.
本發明提供一種微型記憶體封裝結構,其可以縮減整體尺寸且減少製作成本。The present invention provides a miniature memory package structure, which can reduce the overall size and reduce the manufacturing cost.
本發明提供一種記憶體封裝結構,其整合有天線。The present invention provides a memory package structure which integrates an antenna.
本發明的微型記憶體封裝結構包括線路基板、第一晶片、第二晶片以及封裝膠體。線路基板具有第一表面、背向第一表面的第二表面以及位於第二表面上的導電圖案。第一晶片配置於第一表面上。第一晶片具有遠離第一表面的第一主動面以及位於第一主動面上的重佈線路層,且重佈線路層電性連接線路基板。第二晶片配置於第一主動面上,並電性連接重佈線路層。第二晶片具有面向第一主動面的第二主動面。封裝膠體配置於第一表面上,並覆蓋第一晶片與所述第二晶片。The micro memory packaging structure of the present invention includes a circuit substrate, a first chip, a second chip, and a packaging glue. The circuit substrate has a first surface, a second surface facing away from the first surface, and a conductive pattern on the second surface. The first wafer is disposed on the first surface. The first chip has a first active surface away from the first surface and a redistributed circuit layer on the first active surface, and the redistributed circuit layer is electrically connected to the circuit substrate. The second chip is disposed on the first active surface and is electrically connected to the redistribution circuit layer. The second wafer has a second active surface facing the first active surface. The packaging glue is arranged on the first surface and covers the first chip and the second chip.
本發明的記憶體封裝結構包括線路基板、第一晶片、第二晶片、天線以及封裝膠體。線路基板具有第一表面、背向第一表面的第二表面以及位於第二表面上的導電圖案。第一晶片配置於第一表面上。第一晶片具有遠離第一表面的第一主動面以及位於第一主動面上的重佈線路層,且重佈線路層電性連接線路基板。第二晶片配置於第一主動面上,並電性連接重佈線路層。第二晶片具有面向第一主動面的第二主動面。天線配置於線路基板,且天線位於第一晶片的一側。封裝膠體配置於第一表面上,並覆蓋第一晶片與所述第二晶片。The memory packaging structure of the present invention includes a circuit substrate, a first chip, a second chip, an antenna, and a packaging glue. The circuit substrate has a first surface, a second surface facing away from the first surface, and a conductive pattern on the second surface. The first wafer is disposed on the first surface. The first chip has a first active surface away from the first surface and a redistributed circuit layer on the first active surface, and the redistributed circuit layer is electrically connected to the circuit substrate. The second chip is disposed on the first active surface and is electrically connected to the redistribution circuit layer. The second wafer has a second active surface facing the first active surface. The antenna is disposed on the circuit substrate, and the antenna is located on one side of the first chip. The packaging glue is arranged on the first surface and covers the first chip and the second chip.
基於上述,本發明的微型記憶體封裝結構由於第二晶片是以第二主動面面向第一主動面的方式接合於第一晶片上,因此,可以降低預保留的打線空間進而縮減整體尺寸,且可以減少打線材料上的製作成本。Based on the above, the second chip of the micro memory package structure of the present invention is bonded to the first chip with the second active surface facing the first active surface. Therefore, the pre-reserved wire bonding space can be reduced and the overall size can be reduced, and Can reduce the production cost on the wire bonding material.
本發明的記憶體封裝結構整合有天線,且由於第二晶片是以第二主動面面向第一主動面的方式接合於第一晶片上,天線配置於線路基板並位於第一晶片的一側,因此,可以降低預保留的打線空間增加天線周圍的淨空區域,進而可以提升天線的感應靈敏度。The memory package structure of the present invention integrates an antenna, and because the second chip is bonded to the first chip in such a way that the second active surface faces the first active surface, the antenna is disposed on the circuit substrate and located on one side of the first chip, Therefore, the pre-reserved wire bonding space can be reduced to increase the clearance area around the antenna, thereby improving the antenna sensitivity.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。圖式中的層或區域的厚度、尺寸或大小會為了清楚起見而放大。相同或相似之參考號碼表示相同或相似之元件,以下段落將不再一一贅述。The present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness, size or size of the layers or regions in the drawings will be exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one.
圖1A是本發明一實施例的記憶體封裝結構的俯視示意圖。圖1B是圖1A沿剖線A-A’的剖面示意圖。在本實施例中,微型記憶體封裝結構100a的尺寸可以是符合微安全數位記憶卡(Micro Secure Digital, Micro SD)的尺寸。FIG. 1A is a schematic top view of a memory package structure according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. In this embodiment, the size of the micro
請同時參考圖1A與圖1B,在本實施例中,微型記憶體封裝結構100a包括線路基板110、第一晶片120、第二晶片130以及封裝膠體160。線路基板110可以包括多個介電層和內線路層(未圖式)。Please refer to FIGS. 1A and 1B at the same time. In this embodiment, the micro
介電層可以由氧化矽、氮化矽、碳化矽、氮氧化矽、聚酰亞胺、苯並環丁烯等的非有機或有機介電材料所製成。內線路層可以由銅、鋁、鎳或其他適宜的導電材料所製成。應說明的是,圖1B繪示的基板內具有至少一層以上介電層(未圖式),線路基板110中的層數可以視產品需求決定。The dielectric layer can be made of non-organic or organic dielectric materials such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, polyimide, and benzocyclobutene. The inner circuit layer can be made of copper, aluminum, nickel or other suitable conductive materials. It should be noted that the substrate shown in FIG. 1B has at least one dielectric layer (not shown), and the number of layers in the
在本實施例中,線路基板110具有第一表面110a、背向第一表面110a的第二表面110b、位於第一表面110a上的圖案化線路層1161以及位於第二表面110b上的導電圖案118。圖案化線路層1161可以是局部覆蓋線路基板110的第一表面110a,以用於後續第一晶片120與線路基板110的電性連接。導電圖案118可以是凸設於第二表面110b上。導電圖案118例如是導電墊、接點或稱為金手指。In this embodiment, the
在本實施例中,第一晶片120配置於第一表面110a上。第一晶片120具有遠離第一表面110a的第一主動面120a以及位於第一主動面120a上的重佈線路層122,且重佈線路層122電性連接線路基板110。在一實施例中,重佈線路層122可以是僅位於第一主動面120a上。第一晶片120例如是記憶體晶片。舉例而言,記憶體晶片可以是快閃記憶體(NAND Flash)。In this embodiment, the
在本實施例中,第二晶片130配置於第一主動面120a上,並電性連接重佈線路層122,其中第二晶片130具有面向第一主動面120a的第二主動面130a。第二晶片130可以是採用覆晶(flip-chip)的方式電性連接至重佈線路層122,以使第二晶片130電性連接第一晶片120,如圖1B所示。In this embodiment, the
舉例而言,第二晶片130還可以具有位於第二主動面130a上的多個導電部132,且多個導電部132接合於重佈線路層122。進一步而言,可以於重佈線路層122上配置第二晶片130的導電部132,這樣,可以實現第二晶片130與重佈線路層122之間的電性連接。For example, the
在本實施例中,由於第二晶片130是以第二主動面130a面向第一主動面120a的方式接合於第一晶片120上,因此,可以縮減整體尺寸且減少製作成本。進一步而言,藉由上述方式可以降低預保留的打線空間進而縮減整體尺寸,且可以減少打線材料上的製作成本。此外,重佈線路層122可以被用於電路訊號的重新分佈。因此,第二晶片130以第二主動面130a面向第一主動面120a且藉由重佈線路層122電性連接至第一晶片120可以縮短訊號傳導路徑,增加存取速度。In this embodiment, since the
導電部132可以是導電球、導電凸塊(conductive bump)或導電柱(conductive pillar)。在一實施例中,導電球、導電凸塊或導電柱的材料可以包括銅、錫、金、鎳、焊料或上述的組合,但本發明不限於此。第二晶片130例如是控制晶片。The
在一實施例中,第一晶片120在線路基板110上的正投影可以重疊於第二晶片130在線路基板110上的正投影。舉例而言,第二晶片130在線路基板110上的正投影範圍可以位於第一晶片120在線路基板110上的正投影範圍內。進一步而言,第二晶片130的尺寸可以小於第一晶片120的尺寸。In an embodiment, the orthographic projection of the
在一實施例中,微型記憶體封裝結構100a還可以包括至少一導線140。重佈線路層122可採用打線接合(wire bonding)的方式電性連接線路基板110。進一步而言,重佈線路層122可以透過導線140電性連接至線路基板110上的圖案化線路層1161,但本發明不限於此,上述導線140的連接方式可視實際製程需求而調整。In an embodiment, the micro
在一實施例中,微型記憶體封裝結構100a還可以包括至少一被動元件150。被動元件150配置於線路基板110的第一表面110a上並電性連接線路基板110。被動元件150可以是位於部分圖案化線路層1161上。在一實施例中,被動元件150在線路基板110上的正投影位於導電圖案118在線路基板110上的正投影與第一晶片120在線路基板110上的正投影之間。被動元件150與導電圖案118可以是位於第一晶片120的同一側。相較於被動元件150,導電圖案118可以較遠離第一晶片120。In an embodiment, the micro
在本實施例中,封裝膠體160配置於第一表面110a上,並覆蓋第一晶片120與第二晶片130。詳細而言,封裝膠體160覆蓋第一晶片120的側面與覆蓋第二晶片130的側面。更進一步而言,封裝膠體160還可以覆蓋線路基板110的第一表面110a上的導線140與被動元件150。封裝膠體160的材料例如是環氧模壓樹脂(Epoxy Molding Compound, EMC)。In this embodiment, the
在此必須說明的是,以下實施例沿用上述實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments follow the component numbers and part of the content of the above embodiments, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical content is omitted, and the description of the omitted parts is omitted. Reference may be made to the foregoing embodiments, and the descriptions of the following embodiments will not be repeated.
圖2是本發明另一實施例的記憶體封裝結構的剖面示意圖。請參考圖2,本實施例的記憶體封裝結構100b類似於上述實施例的微型記憶體封裝結構100a,而其差別在於:記憶體封裝結構100b不限制為微型記憶體封裝結構,且本實施例的記憶體封裝結構100b包括天線1701。天線1701配置於線路基板110,且天線1701位於第一晶片120的一側。進一步而言,天線1701可以是埋設於線路基板110內。在本實施例中,天線1701可以屬於內線路層的一部分,這樣,可以將天線1701整合至內線路層中進一步降低製造成本。2 is a schematic cross-sectional view of a memory package structure according to another embodiment of the invention. Please refer to FIG. 2, the
在本實施例中,由於第二晶片130是以第二主動面130a面向第一主動面120a的方式接合於第一晶片120上,且天線1701配置於線路基板並位於第一晶片120的一側,因此,可以降低預保留的打線空間增加天線1701周圍的淨空區域,進而可以提升天線1701的感應靈敏度。In this embodiment, since the
舉例而言,天線1701例如是可應用於近場通訊(Near Field Communication, NFC)的無線射頻識別(Radio frequency identification, RFID)天線。當上述記憶體封裝結構100b應用於近場通訊時,藉由上述配置方式可以增加天線1701周圍淨空區域的面積,進而可以增加天線1701的感應距離,提升天線1701的感應靈敏度。For example, the
在此,淨空區域是指無導電物質存在的區域,用以防止外在環境中電子元件對所述天線1701產生電磁干擾。舉例而言,線路基板110可以具有位於第一表面110a與第二表面110b之間的絕緣區R,且絕緣區R位於天線1701的正上方。換句話說,絕緣區R位於第一表面110a與天線1701之間。因此,絕緣區R可以是天線1701周圍的淨空區域的一部分。Here, the clearance area refers to an area where there is no conductive material, which is used to prevent electronic components from causing electromagnetic interference to the
在一實施例中,被動元件150可以是位於第一晶片120與天線1701之間。被動元件150、天線1701與導電圖案118可以是位於第一晶片120的同一側。相較於被動元件150,天線1701與導電圖案118可以較遠離第一晶片120,且天線1701在線路基板110上的正投影重疊於導電圖案118在線路基板110上的正投影。在一實施例中,天線1701在線路基板110上的正投影面積小於導電圖案118在線路基板110上的正投影面積,但本發明不限於此。In an embodiment, the
圖3是本發明又一實施例的記憶體封裝結構的剖面示意圖。請參考圖3,本實施例的記憶體封裝結構100c類似於上述實施例的記憶體封裝結構100b,而其差別在於:本實施例的記憶體封裝結構100c的天線1702配置於線路基板110的第一表面110b上。天線1702電性連接圖案化線路層1162。在一實施例中,天線1702可以是屬於圖案化線路層1162的一部分,且封裝膠體160可以覆蓋天線1702。3 is a schematic cross-sectional view of a memory package structure according to another embodiment of the invention. 3, the
圖4是圖2、圖3中的天線的俯視示意圖。請參考圖4,圖2的天線1701與圖3的天線1702可以是螺旋天線。螺旋天線可以是近場天線及遠場天線,此天線設計之繞組方式及圖形呈現可依實際設計阻抗匹配需求調整天線的面積及外觀設計方式。FIG. 4 is a schematic top view of the antenna in FIG. 2 and FIG. 3. Please refer to FIG. 4, the
圖5A是本發明再一實施例的記憶體封裝結構的剖面示意圖。圖5B是圖5A中的天線的俯視示意圖。請同時參考圖5A與圖5B,本實施例的記憶體封裝結構100d類似於上述實施例的記憶體封裝結構100c,而其差別在於:本實施例的記憶體封裝結構100d的天線1703包括天線基板1704與配置於天線基板1704上的天線圖案1705,且天線1703可以是陣列天線,如圖5B所示。進一步而言。天線基板1704配置於線路基板110的第一表面110a上,且天線基板1704電性連接線路基板110。天線基板1704可以是位於圖案化線路層1163上,以藉由圖案化線路層1163電性連接線路基板110。在一實施例中,天線1703可以是以表面安裝技術(surface-mount technology, SMT)的方式結合於線路基板110上,但本發明不限於此。5A is a schematic cross-sectional view of a memory package structure according to still another embodiment of the invention. FIG. 5B is a schematic top view of the antenna in FIG. 5A. Referring to FIGS. 5A and 5B at the same time, the
綜上所述,本發明的微型記憶體封裝結構由於第二晶片是以第二主動面面向第一主動面的方式接合於第一晶片上,因此,可以降低預保留的打線空間進而縮減整體尺寸,且可以減少打線材料上的製作成本。再者,第二晶片以第二主動面面向第一主動面且藉由重佈線路層電性連接至第一晶片可以縮短訊號傳導路徑,增加存取速度。In summary, in the micro memory package structure of the present invention, since the second chip is bonded to the first chip with the second active surface facing the first active surface, the pre-reserved bonding space can be reduced and the overall size can be reduced. , And can reduce the production cost of wire bonding materials. Furthermore, the second chip faces the first active surface with the second active surface and is electrically connected to the first chip by the redistributed circuit layer, which can shorten the signal conduction path and increase the access speed.
本發明的記憶體封裝結構整合有天線,且由於第二晶片是以第二主動面面向第一主動面的方式接合於第一晶片上,天線配置於線路基板並位於第一晶片的一側,因此,可以降低預保留的打線空間增加天線周圍的淨空區域,進而可以提升天線的感應靈敏度。The memory package structure of the present invention integrates an antenna, and because the second chip is bonded to the first chip in such a way that the second active surface faces the first active surface, the antenna is disposed on the circuit substrate and located on one side of the first chip, Therefore, the pre-reserved wire bonding space can be reduced to increase the clearance area around the antenna, thereby improving the antenna sensitivity.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.
100a:微型記憶體封裝結構
100b、100c、100d:記憶體封裝結構
110:線路基板
110a:第一表面
110b:第二表面
1161、1162、1163:圖案化線路層
118:導電圖案
120:第一晶片
120a、130a:主動面
122:重佈線路層
130:第二晶片
132:導電部
140:導線
150:被動元件
160:封裝膠體
1701、1702、1703:天線
1704:天線基板
1705:天線圖案
R:絕緣區100a: Micro
圖1A是本發明一實施例的微型記憶體封裝結構的俯視示意圖。 圖1B是圖1A沿剖線A-A’的剖面示意圖。 圖2是本發明另一實施例的記憶體封裝結構的剖面示意圖。 圖3是本發明又一實施例的記憶體封裝結構的剖面示意圖。 圖4是圖2、圖3中的天線的俯視示意圖。 圖5A是本發明再一實施例的記憶體封裝結構的剖面示意圖。 圖5B是圖5A中的天線的俯視示意圖。FIG. 1A is a schematic top view of a micro memory package structure according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. 2 is a schematic cross-sectional view of a memory package structure according to another embodiment of the invention. 3 is a schematic cross-sectional view of a memory package structure according to another embodiment of the invention. FIG. 4 is a schematic top view of the antenna in FIG. 2 and FIG. 3. 5A is a schematic cross-sectional view of a memory package structure according to still another embodiment of the invention. FIG. 5B is a schematic top view of the antenna in FIG. 5A.
100a:微型記憶體封裝結構 100a: Micro memory package structure
110:線路基板 110: circuit board
110a:第一表面 110a: first surface
110b:第二表面 110b: second surface
1161:圖案化線路層 1161: Patterned circuit layer
118:導電圖案 118: Conductive pattern
120:第一晶片 120: The first chip
120a、130a:主動面 120a, 130a: active surface
122:重佈線路層 122: Relay line layer
130:第二晶片 130: second chip
132:導電部 132: Conductive part
140:導線 140: Wire
150:被動元件 150: Passive components
160:封裝膠體 160: Encapsulation colloid
Claims (15)
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| CN107068659B (en) * | 2017-04-19 | 2023-11-17 | 华进半导体封装先导技术研发中心有限公司 | A fan-out chip integrated antenna packaging structure and method |
| US10276920B2 (en) * | 2017-09-28 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure, electronic device and method of fabricating package structure |
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| TW201212170A (en) * | 2010-09-14 | 2012-03-16 | Aptos Technology Inc | Package structure for memory card and method for fabricating the same |
| TW201528470A (en) * | 2013-12-18 | 2015-07-16 | 瑞薩電子股份有限公司 | Semiconductor device |
| WO2017052740A1 (en) * | 2015-09-21 | 2017-03-30 | Intel Corporation | Platform with thermally stable wireless interconnects |
| US20190103365A1 (en) * | 2017-09-29 | 2019-04-04 | Nxp Usa, Inc. | Selectively shielded semiconductor package |
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