TWI737474B - Solid-state optical phased scanning component - Google Patents

Abstract

The present invention relates to a solid-state optical phase scanning array component, including: a plurality of optical units, each of the optical units includes a high dielectric constant layer, and a first electrode and a second electrode located on two sides of the high dielectric constant layer, the refractive index of each high dielectric constant layer is changeable as the power condition supplied to first and second electrodes is changed; and a lens unit, located at a light-exiting side facing the plurality of optical units, and including a light-incident surface and a light-exiting surface, being configured to guide light beam incident from the light incident surface to the plurality of optical units to change the path of the light beam, and then the light beam emits out from the light exiting surface.

Description

Solid-state optical phase scanning component

The invention relates to a solid-state optical phase scanning component, which is used for lidar, holographic scanning and structured light scanning.

Lidar is a light detection and ranging sensor, which uses a beam of light to scan the target to be detected and reflect the time it takes to measure the distance of the target to be detected. It has high reliability, Long service life, small size, light weight, low cost and other advantages.

The conventional LiDAR is generally designed to include a plurality of point light source matrices, and then adjust the beam angle of each point light source by mechanically moving the scanning member. Therefore, the mechanically movable scanning member has a complicated structure, difficult manufacturing process, high cost, and separate mechanically moved scanning members. The operation may be due to manufacturing or/and control errors, and there is a doubt about insufficient accuracy.

Therefore, it is necessary to provide a novel and progressive solid-state optical phase scanning component to solve the above-mentioned problems.

The main purpose of the present invention is to provide a solid-state optical phase scanning component, which can control the phase of the beam and then modulate the direction of the beam for scanning.

To achieve the above object, the present invention provides a solid-state optical phase scanning component, including: a plurality of optical units, each of the optical units includes a high dielectric layer, and a first electrode and a second electrode located on both sides of the high dielectric layer Electrodes, each of the high dielectric layers can have different refractive indexes when the first and second electrodes are applied with different power supply conditions; and a lens unit is located on the light-exit side facing the plurality of optical units and includes a light-incident surface And a light-emitting surface configured to guide the light beam incident from the light-incident surface to the plurality of optical units to change the path of the light beam and then be emitted from the light-emitting surface.

The following examples are only used to illustrate the possible implementation aspects of the present invention, but they are not intended to limit the scope of protection of the present invention, and are described first.

Please refer to FIGS. 1 to 4, which show a preferred embodiment of the present invention. The solid-state optical phase scanning component 1 of the present invention includes a plurality of optical units 10 and a lens unit 20.

Each of the optical units 10 includes a high dielectric layer 11, and a first electrode 12 and a second electrode 13 located on two sides of the high dielectric layer 11. The two electrodes 12, 13 have different refractive indices when different power supply conditions are applied. The power supply conditions can be voltage or other power supply conditions that can affect the refractive index of the high dielectric layer 11. Each of the optical units 10 can be reflective or Transmissive; the lens unit 20 is located facing the light-exit side 14 of the plurality of optical units 10, the lens unit 20 includes a light-incident surface 21 and a light-exit surface 22, the lens unit 20 is configured to The light beam 100 incident on the light surface 21 is guided to the plurality of optical units 10 to change the path of the light beam 100 and then emitted from the light exit surface 22. The light beam 100 may be an infrared light beam or a light beam with other wavelengths. Wherein, the high dielectric layer 11 of the plurality of optical units 10 can be constructed to be individually, grouped, or all together to control the change of its refractive index. Thereby, a single light source can be transmitted through different power supply conditions to simply change the refractive index of the high-dielectric layer 11 to generate a phase difference between the beams, so as to control the beam phase and then modulate the beam direction for scanning. In addition, the distance between the plurality of optical units 10 can cause the optical path difference between the light beams. Therefore, in addition to the phase difference caused by changing the refractive index of the high dielectric layer 11, a double adjustment effect can be achieved.

The plurality of optical units 10 are preferably arranged in a matrix, and can also be arranged and combined according to requirements. The high dielectric layer 11 is a titanium carbide layer, a silicon nitride layer, an aluminum nitride layer, a barium titanate layer, a silicon dioxide layer or a piezoelectric ceramic layer, and each of the high dielectric layers 11 can be a single layer integrally formed Part of high dielectric film. In the manufacturing process of the high dielectric layer 11, single crystal silicon material can be used, which has a small structure, large thermo-optical coefficient, and easy phase adjustment; while using silicon nitride material, its loss is small and processing error tolerance is large. Accurate control of favorable phase. The first electrode 12 is located between the lens unit 20 and the high dielectric layer 11 and is grounded. The first electrode 12 is light-transmissive silver (Ag), copper (Cu), gold (Au) or transparent conductive Thin film, the thickness of the first electrode 12 is preferably not more than 100 nanometers to allow light transmission. Each of the first electrodes 12 is a part of a single-layer integrally formed metal film. The second electrode 13 of each optical unit 10 is independently located on the side of the high dielectric layer 11 away from the lens unit 20. The second electrode 13 is opaque and includes a base layer (preferably not Allow light transmission) on silver (Ag), copper (Cu), gold (Au) or conductive film (its thickness is preferably not less than 10 nm), the total thickness of the second electrode 13 is preferably not more than 100 nm It does not allow light transmission. Optionally, the lens unit can be directly coupled to one side of the high dielectric layer 11 or directly coupled to one side of the first electrode 12 to form an integrated structure, without the need for a separate lens unit.

In other embodiments, the second electrode 13 may be configured to face the lens unit 20, and the first electrode 12 may be configured to be located on a side of the high dielectric layer 11 away from the lens unit 20; the lens unit may be directly combined An integrated structure is formed on one side of the high dielectric layer.

In this embodiment, each of the optical units 10 further includes a back layer 30, and the back layer 30 is located on a side of the high dielectric layer 11 away from the lens unit 20. The back layer 30 is a sapphire layer, which has good heat dissipation, support and protection effects. Each of the back layers 30 is a part of a single-layer integrally formed sapphire film, and the second electrode 13 is located between the high dielectric layer 11 and the back layer 30.

The lens unit 20 includes a silicon (Si) lens or a silicon dioxide (SiO ₂ ) lens. The lens can also be a spherical or aspherical lens. According to different requirements, the lens unit 20 can include a single lens or a plurality of lenses. In the present embodiment, the lens unit 20 includes a three-dimensional ring, the metal film is disposed on one side of the three-dimensional ring, and the light-incident surface 21 and the light-emitting surface 22 are respectively disposed on the other two surfaces of the three-dimensional ring .

In mechanism, when the light beam 100 is incident, a control unit 40 can be used to control and input different power supply conditions to the first and second electrodes 12, 13 of the complex optical unit 10, so that the high dielectric layer of the complex optical unit 10 11 has different refractive indexes. The light beam 100 entering the lens unit 20 from the light-incident surface 21 passes through the first electrode 12, enters the high dielectric layer 11 and is reflected by the second electrode 13 and passes through the high dielectric layer. The electrical layer 11 passes through the first electrode 12 after being refracted and is emitted from the light-emitting surface 22. The high dielectric layer 11 with different refractive indexes makes the light beam 100 emitted from part or all of the optical unit 10 turn and produce a phase difference. By adjusting the phase relationship between the light beams 100, constructive interference can be generated in the specified direction to achieve high intensity With directional beam (destructive interference in other directions without beam output), the irradiation direction of one or more high-intensity beams can be controlled by power supply conditions to realize 1D/2D/3D scanning in space. The light beam 100 is preferably transmitted in an optical fiber 50, and after passing through a collimator 60, it enters the solid-state optical phase scanning member 1 and is projected to the object to be scanned. The reflected light beam after scanning can be, for example, an infrared camera or The other optical receivers receive it, and then obtain the scanning result through the back-end processing device.

1: Solid-state optical phase scanning component

10: Optical unit

11: High dielectric layer

12: The first electrode

13: second electrode

14: Light emitting side

20: lens unit

21: Glossy surface

22: Glossy surface

30: back layer

40: control unit

50: Optical fiber

60: collimator

100: beam

FIG. 1 is a schematic diagram of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 2 is a perspective view of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 3 is an exploded view of a solid-state optical phase scanning component according to a preferred embodiment of the present invention. Fig. 4 is a schematic diagram of the function of a preferred embodiment of the present invention.

1: Solid-state optical phase scanning component

11: High dielectric layer

12: The first electrode

30: back layer

100: beam

Claims (9)

A solid-state optical phase scanning component includes: a plurality of optical units, each of the optical units includes a high-dielectric layer, and a first electrode and a second electrode located on two sides of the high-dielectric layer, each of the high-dielectric layers The first and second electrodes can have different refractive indexes when different power supply conditions are applied; and a lens unit, which is located on the light-exit side facing the plurality of optical units, includes a light-incident surface and a light-emitting surface, and is configured to The light beams incident from the light incident surface can be directed to the plurality of optical units to change the path of the light beams and then emitted from the light exit surface; wherein each of the optical units further includes a back layer located on the high dielectric layer On a side far away from the lens unit, the second electrode is located between the high dielectric layer and the back layer, and the second electrode is opaque. The solid-state optical phase scanning member according to claim 1, wherein the plurality of optical units are arranged in a matrix. The solid-state optical phase scanning member according to claim 1, wherein the high dielectric layer is a titanium carbide layer, a silicon nitride layer, a barium titanate layer, or a silicon dioxide layer. The solid-state optical phase scanning member according to claim 1, wherein the first electrode is located between the lens unit and the high dielectric layer, and the first electrode is silver (Ag), copper (Cu) or gold (Au) film. The solid-state optical phase scanning member according to claim 4, wherein each of the first electrodes is a part of a single-layer integrally formed metal film. The solid-state optical phase scanning member according to claim 1, wherein the back layer is a sapphire layer. The solid-state optical phase scanning component according to claim 1, wherein the lens unit includes a silicon (Si) 鏡 or a silicon dioxide (SiO ₂ ) lens. The solid-state optical phase scanning member according to claim 6, further comprising an optical fiber and a collimator connected to one end of the optical fiber, the light beam is transmitted in the optical fiber and emitted from the collimator to the light incident surface; wherein The power supply condition is voltage; the plurality of optical units are arranged in a matrix; the high dielectric layer is a titanium carbide layer, a silicon nitride layer, a barium titanate layer or a silicon dioxide layer; each of the high dielectric layers is a single layer integrally formed Part of the high dielectric film; the first electrode is located between the lens unit and the high dielectric layer and is grounded; the first electrode is light-transmissive silver (Ag), copper (Cu) or gold (Au) ) Thin film; each of the first electrodes is a part of a single-layer integrally formed metal thin film; the second electrode includes a silver (Ag), copper (Cu) or gold (Au) thin film arranged on a base layer; each of the back layers It is a part of a single-layer integrally formed sapphire film; the lens unit includes a silicon (Si) lens or a silicon dioxide (SiO ₂ ) lens; and the lens unit includes a triple lens on which the metal film is disposed One of the sides, the light-incident surface and the light-exit surface are respectively set on the other two sides of the three ridges. The solid-state optical phase scanning member according to any one of claims 1 to 8, wherein the second electrode of each optical unit is independently located on a side of the high dielectric layer away from the lens unit.

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