TWI736735B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

A substrate processing method includes: a substrate holding step of horizontally holding a substrate with a metal film on the exposed upper surface; a substrate rotation step of rotating the aforementioned substrate around a vertical axis of rotation; liquid film formation The step is to supply the degassed processing liquid to the upper surface of the substrate, thereby forming a liquid film of the processing liquid on the substrate; and the film thickness adjustment step is to adjust the thickness of the liquid film to 100 μm or more To adjust the thickness of the aforementioned liquid film.

Description

Substrate processing method and substrate processing device

The present invention relates to a substrate processing method and a substrate processing apparatus for processing substrates. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, organic EL (Electroluminescence; electroluminescence) display devices, such as FPD (Flat Panel Display) substrates, and optical discs. Substrates such as substrates, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

In the manufacturing process of a semiconductor device, a liquid crystal display device, etc., a cleaning step for removing foreign matter from a substrate such as a semiconductor wafer or a glass substrate for liquid crystal display is performed. For example, in the back end of the line (BEOL: Back End of the Line) process of forming multilayer wiring on the surface of a semiconductor wafer equipped with components such as transistors or capacitors, etc., dry etching is used. Or a polymer removal step in which polymer residues produced by ashing are removed.

In the polymer removal step, a treatment liquid such as a polymer removal liquid is supplied to the surface of the substrate where metal wiring (for example, copper wiring) has been exposed. However, when a processing liquid with a relatively high oxygen concentration is supplied to the substrate, the metal wiring on the substrate is oxidized by oxygen (dissolved oxygen) being dissolved in the processing liquid, and metal oxides are formed. Since the metal oxide is corroded (etched) by the processing liquid, there is a possibility that the quality of the device fabricated from the substrate may be degraded. The etching amount of the metal wiring increases with the increase of the oxygen concentration in the treatment solution. In addition, oxidation of the metal wiring on the substrate due to the dissolved oxygen in the treatment liquid may occur even in the treatment of the substrate by the treatment liquid other than the polymer removal liquid.

Therefore, in Patent Document 1 below, it has been proposed to supply an inert gas between a substrate held by a spin chuck and a blocking plate opposed to the upper surface of the substrate, thereby replacing it with the inert gas. Technology to block the atmosphere between the board and the substrate. Thereby, since the oxygen concentration in the atmosphere around the substrate is reduced, the amount of oxygen dissolved in the processing liquid supplied to the substrate can be reduced.

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: JP 2013-77595 A.

As long as the replacement of the atmosphere by the inert gas can be omitted, the time required for substrate processing can be shortened, and throughput (the number of substrates processed per unit time) can be increased.

Therefore, an object of the present invention is to provide a structure for processing a substrate with an exposed surface of a metal film, without reducing the oxygen concentration in the atmosphere surrounding the substrate, which can suppress the metal caused by the oxygen in the process. Film oxidation substrate processing method and substrate processing device.

An embodiment of the present invention provides a substrate processing method, which includes: a substrate holding step of horizontally holding a substrate with a metal film on the exposed upper surface; a substrate rotation step of causing the substrate to move around a vertical direction The liquid film forming step is to supply the degassed processing liquid to the upper surface of the substrate, thereby forming the liquid film of the processing liquid on the substrate; and the film thickness adjustment step is to use the liquid The thickness of the aforementioned liquid film is adjusted so that the thickness of the film becomes 100 μm or more.

According to this method, the liquid film of the processing liquid can be formed on the substrate in the liquid film forming step. The liquid film is used to cover the metal film exposed on the surface of the substrate. In the film thickness adjustment step, the thickness of the liquid film formed on the substrate in the liquid film formation step is adjusted to be 100 μm or more. For this reason, the adjusted liquid film has a sufficient thickness.

Since the liquid film has a sufficient thickness, the liquid film can be exposed to the atmosphere around the substrate to prevent the oxygen dissolved in the processing liquid from reaching the upper surface of the substrate. In addition, since the liquid film has a sufficient thickness, the volume of the liquid film is also large enough. For this reason, it is possible to suppress the increase in the oxygen concentration in the liquid film due to the dissolution of oxygen in the processing liquid supplied to the upper surface of the substrate. Therefore, since the oxygen that reacts with the metal film is reduced, the oxidation of the metal film can be suppressed.

Therefore, without reducing the oxygen concentration in the atmosphere surrounding the substrate, the oxidation of the metal film caused by the oxygen in the processing solution can be suppressed.

In one embodiment of the present invention, the film thickness adjustment step includes a step of controlling the rotation of the substrate so that the rotation speed of the substrate becomes 300 rpm or less, thereby adjusting the thickness of the liquid film.

According to this method, in the film thickness adjustment step, the rotation of the substrate is controlled so that the rotation speed of the substrate becomes 300 rpm or less, so that the thickness of the liquid film can be adjusted.

The liquid film formed on the rotating substrate has centrifugal force. For this reason, when the rotation speed of the substrate increases, the amount of processing liquid scattered outside the substrate by centrifugal force will increase, and the amount of processing liquid on the substrate will decrease. Therefore, the thickness of the liquid film may become insufficient. Therefore, in the film thickness adjustment step, by controlling the rotation of the substrate in such a way that the rotation speed of the substrate becomes sufficiently small (being 300 rpm or less), the liquid film can be made sufficiently thick. Therefore, the oxidation of the metal film can be suppressed.

In one embodiment of the present invention, the step of adjusting the film thickness includes: controlling the supply amount of the processing liquid so that the supply amount of the processing liquid becomes 2.0 L/min or more, thereby adjusting the thickness of the liquid film step.

As mentioned above, by the centrifugal force acting on the liquid film formed on the rotating substrate, the processing liquid will scatter to the outside of the substrate. For this reason, when the supply amount of the processing liquid decreases, the amount of the processing liquid on the substrate decreases. As a result, the thickness of the liquid film may become insufficient.

Therefore, in the film thickness adjustment step, the liquid film can be made thick enough by controlling the supply amount of the processing liquid so that the supply amount of the processing liquid becomes sufficiently large (the method becomes 2.0 L/min or more). Therefore, the oxidation of the metal film can be suppressed.

In one embodiment of the present invention, the liquid film forming step includes the step of supplying the processing liquid toward the center of rotation of the upper surface of the substrate, thereby forming the liquid film. Then, the film thickness adjustment step includes the step of supplying gas toward a position lateral to the center of rotation of the upper surface of the substrate to thereby adjust the thickness of the liquid film.

According to this method, in the liquid film forming step, the liquid film can be formed by supplying the processing liquid toward the center of rotation of the upper surface of the substrate.

When the processing liquid is supplied toward the center of rotation of the upper surface of the substrate, the position on the side of the center of rotation of the upper surface of the substrate (especially, the position about 20 mm away from the center of rotation of the upper surface of the substrate and the position above the center of rotation of the substrate) The center of rotation of the surface is about 80mm), the liquid film is easier to thicken. On the other hand, near the periphery of the upper surface of the substrate, the liquid film tends to become thinner. In other words, the thickness of the liquid film in the upper surface of the substrate is prone to unevenness.

Therefore, in the film thickness adjustment step, the position facing the side of the center of rotation of the upper surface of the substrate (for example, a position about 20 mm from the center of rotation of the upper surface of the substrate and a position of about 80 mm from the center of rotation of the upper surface of the substrate) In addition to the centrifugal force, the gas is supplied, and the force that the gas pushes the processing liquid toward the periphery of the substrate can be applied to the position on the side of the center of rotation on the upper surface of the substrate. liquid. As a result, the speed at which the processing liquid located at a position on the side of the center of rotation of the upper surface of the substrate moves toward the peripheral edge of the substrate increases. For this reason, the thickness of the liquid film in a position lateral to the center of rotation of the upper surface of the substrate is reduced, and the thickness of the liquid film in the vicinity of the periphery of the upper surface of the substrate is increased. In this way, the unevenness of the thickness of the liquid film can be reduced.

In one embodiment of the present invention, the aforementioned substrate processing method further includes: a film thickness measurement step of measuring the thickness of the liquid film adjusted in the aforementioned film thickness adjustment step.

According to this method, in the film thickness measurement step, the thickness of the liquid film adjusted in the film thickness adjustment step can be measured. For this reason, abnormalities in substrate processing such as deviation of the thickness of the liquid film from the intended value in the film thickness adjustment step can be detected early.

In one embodiment of the present invention, the film thickness adjustment step includes a step of adjusting the thickness of the liquid film based on the thickness of the liquid film measured in the film thickness measurement step.

According to this method, in the film thickness adjustment step, the thickness of the liquid film can be adjusted based on the thickness of the liquid film measured in the film thickness measurement step. For this reason, in the film thickness adjustment step, the thickness of the liquid film can be adjusted accurately.

The present invention further provides a substrate processing apparatus, including: a substrate holding unit for horizontally holding a substrate with a metal film on the exposed upper surface; a substrate rotating unit for rotating the aforementioned substrate around a rotation axis in a vertical direction The processing liquid supply unit is to supply the degassed processing liquid to the upper surface of the substrate; and the controller is to control the substrate holding unit, the substrate rotating unit and the processing liquid supply unit.

Then, the aforementioned controller is programmed to execute a substrate holding step, a substrate rotating step, a liquid film forming step, and a film thickness adjusting step. The substrate holding step holds the substrate in the substrate holding unit, and the substrate rotating step The substrate is rotated around the axis of rotation, and the liquid film forming step is to supply the processing liquid to the upper surface of the substrate to form a liquid film of the processing liquid on the substrate. The film thickness adjustment step is The thickness of the liquid film is adjusted so that the thickness of the liquid film becomes 100 μm or more.

According to this configuration, in the liquid film forming step, a liquid film of the processing liquid is formed on the substrate. The liquid film is used to cover the metal film exposed on the surface of the substrate. In the film thickness adjustment step, the thickness of the liquid film formed on the substrate in the liquid film formation step is adjusted to be 100 μm or more. For this reason, the adjusted liquid film has a sufficient thickness.

Since the liquid film has a sufficient thickness, the liquid film can be exposed to the atmosphere around the substrate to prevent the oxygen dissolved in the processing liquid from reaching the upper surface of the substrate. In addition, since the liquid film has a sufficient thickness, the volume of the liquid film is also large enough. For this reason, it is possible to suppress the increase in the oxygen concentration in the liquid film due to the dissolution of oxygen in the processing liquid supplied to the upper surface of the substrate. Therefore, since the oxygen that reacts with the metal film is reduced, the oxidation of the metal film can be suppressed.

Therefore, without reducing the oxygen concentration in the atmosphere surrounding the substrate, the oxidation of the metal film caused by the oxygen in the processing solution can be suppressed.

In one embodiment of the present invention, the film thickness adjustment step includes a step of controlling the rotation of the substrate so that the rotation speed of the substrate becomes 300 rpm or less, thereby adjusting the thickness of the liquid film.

According to this structure, in the film thickness adjustment step, the rotation of the substrate is controlled so that the rotation speed of the substrate becomes sufficiently small (the method becomes 300 rpm or less). For this reason, the liquid film can be made thick enough. Therefore, the oxidation of the metal film can be suppressed.

In one embodiment of the present invention, the step of adjusting the film thickness includes: controlling the supply amount of the processing liquid so that the supply amount of the processing liquid becomes 2.0 L/min or more, thereby adjusting the thickness of the liquid film step.

According to this structure, in the film thickness adjustment step, the supply amount of the processing liquid can be controlled so that the supply amount of the processing liquid becomes sufficiently large (the amount becomes 2.0 L/min or more). For this reason, the liquid film can be made thick enough. Therefore, the oxidation of the metal film can be suppressed.

In one embodiment of the present invention, the liquid film forming step includes the step of supplying the processing liquid toward the center of rotation of the upper surface of the substrate, thereby forming the liquid film. Then, the film thickness adjustment step includes the step of supplying gas toward a position lateral to the center of rotation of the upper surface of the substrate to thereby adjust the thickness of the liquid film.

According to this configuration, in the liquid film forming step, the liquid film can be formed by supplying the processing liquid toward the center of rotation on the upper surface of the substrate. In the film thickness adjustment step, a position that can face to the side of the center of rotation of the upper surface of the substrate (for example, a position about 20 mm from the center of rotation of the upper surface of the substrate and a position of about 80 mm from the center of rotation of the upper surface of the substrate) Between) supply gas. Thereby, in addition to the centrifugal force, the force of the gas pushing the processing liquid toward the periphery of the substrate can be applied to the processing liquid at a position on the side of the center of rotation of the upper surface of the substrate. As a result, the speed at which the processing liquid located at a position on the side of the center of rotation of the upper surface of the substrate moves toward the peripheral edge of the substrate increases. For this reason, the thickness of the liquid film in a position lateral to the center of rotation of the upper surface of the substrate is reduced, and the thickness of the liquid film in the vicinity of the periphery of the upper surface of the substrate is increased. In this way, the unevenness of the thickness of the liquid film can be reduced.

In one embodiment of the present invention, the substrate processing apparatus further includes a film thickness measuring unit capable of measuring the thickness of the liquid film. Then, the controller controls the film thickness measurement unit to execute the film thickness measurement step of measuring the thickness of the liquid film adjusted in the film thickness adjustment step.

According to this configuration, in the film thickness measurement step, the thickness of the liquid film adjusted in the film thickness adjustment step can be measured. For this reason, abnormalities in substrate processing such as deviation of the thickness of the liquid film from the intended value in the film thickness adjustment step can be detected early.

In one embodiment of the present invention, the film thickness adjustment step includes a step of adjusting the thickness of the liquid film based on the thickness of the liquid film measured in the film thickness measurement step.

According to this configuration, in the film thickness adjustment step, the thickness of the liquid film can be adjusted based on the thickness of the liquid film measured in the film thickness measurement step. For this reason, in the film thickness adjustment step, the thickness of the liquid film can be adjusted accurately.

The foregoing or further other purposes, features, and effects of the present invention can be understood with reference to the drawings and the description of the embodiments described below.

1‧‧‧Substrate processing equipment

2‧‧‧Processing unit

3‧‧‧Controller

3A‧‧‧Processor

3B‧‧‧Memory

5‧‧‧Rotating Chuck

6‧‧‧Cup body

7‧‧‧Medicinal solution supply unit

8‧‧‧Flushing fluid supply unit

9‧‧‧Gas supply unit

10‧‧‧Film thickness measurement unit

11‧‧‧Blocking board

11a‧‧‧Opposite surface

14‧‧‧ Chamber

20‧‧‧Chuck pin

21‧‧‧Rotating base

22‧‧‧Rotation axis

23‧‧‧Electric Motor

30‧‧‧Medicinal Liquid Nozzle

31‧‧‧Liquid supply pipe

32‧‧‧Liquid supply valve

33‧‧‧Liquid flow adjustment valve

34‧‧‧Chemical liquid degassing unit

35‧‧‧Medicine Liquid Nozzle Moving Unit

40‧‧‧Flushing fluid nozzle

41‧‧‧Flushing fluid supply pipe

42‧‧‧Flushing fluid supply valve

43‧‧‧Flushing fluid flow adjustment valve

44‧‧‧Flushing liquid degassing unit

50‧‧‧Gas nozzle

51‧‧‧Gas supply pipe

52‧‧‧Gas supply valve

53‧‧‧Gas flow adjustment valve

55‧‧‧Gas nozzle moving unit

56‧‧‧Rotating shaft

57‧‧‧Nozzle arm

58‧‧‧Robot arm drive mechanism

60‧‧‧Film Thickness Probe

61‧‧‧Film Thickness Measuring Device

62‧‧‧Connecting line

70‧‧‧Metal Film

72‧‧‧Interlayer insulation film

73‧‧‧Lower wiring duct

74‧‧‧Copper wiring

75‧‧‧Etching stop film

76‧‧‧Low dielectric constant insulating film

77‧‧‧Upper wiring duct

78‧‧‧Guide hole

80‧‧‧Liquid film

A1‧‧‧Rotation axis

C‧‧‧vehicle

C1‧‧‧Rotation Center

CR, IR‧‧‧Handling robot

LP‧‧‧Load port

P1‧‧‧First position

P2‧‧‧Second position

T‧‧‧Thickness

W‧‧‧Substrate

FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the aforementioned substrate processing apparatus.

FIG. 3 is a block diagram for explaining the electrical configuration of the main part of the aforementioned substrate processing apparatus.

4 is a cross-sectional view for explaining an example of the surface condition of the substrate processed by the aforementioned substrate processing apparatus.

FIG. 5 is a flowchart for explaining an example of substrate processing performed by the aforementioned substrate processing apparatus.

Fig. 6 is a schematic anatomical view for explaining the state of the liquid medicine treatment (S2 of Fig. 5).

FIG. 7 is a graph showing the result of measuring the change in the thickness of the liquid film of hydrofluoric acid caused by the change in the rotation speed of the substrate.

FIG. 8 is a graph showing the result of measuring the change in the etching amount of the Cu (copper) film caused by the change in the thickness of the liquid film of hydrofluoric acid.

FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention.

The substrate processing device 1 refers to a single-chip device that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disc-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2, which are processed with a processing liquid such as a chemical solution or a rinse liquid, and the like; A carrier C for the substrate W is placed; robots IR and CR are used to transport the substrate W between the load port LP and the processing unit 2; and a controller 3 for controlling the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plural processing units 2 have the same structure, for example.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2.

The processing unit 2 includes: a spin chuck 5, which rotates the substrate W around a vertical rotation axis A1 passing through the center of the substrate W while holding a substrate W in a horizontal position; and a cylindrical one. The cup 6 surrounds the rotating chuck 5. The processing unit 2 further includes: a chemical liquid supply unit 7 for supplying chemical liquid to the upper surface (surface) of the substrate W; a rinse liquid supply unit 8 for supplying deionized water (DIW) to the upper surface of the substrate W The gas supply unit 9 supplies nitrogen (N ₂ ) gas and other gas to the upper surface of the substrate W; and the film thickness measurement unit 10 measures the liquid film of the processing liquid and the like that has been formed on the substrate W The thickness.

The processing unit 2 further includes a chamber 14 for accommodating the cup 6 (refer to FIG. 1). The chamber 14 is formed with an entrance (not shown) for carrying the substrate W into the inside of the chamber 14 or carrying the substrate W out of the inside of the chamber 14. The chamber 14 is provided with a shutter unit (not shown) that opens and closes the entrance and exit.

The rotating chuck 5 includes a chuck pin 20, a spin base 21, a rotating shaft 22 and an electric motor 23. The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The upper end of the rotating shaft 22 is connected to the center of the lower surface of the rotating base 21.

The rotating base 21 has a disk shape along the horizontal direction. A plurality of chuck pins 20 are arranged on the peripheral edge of the upper surface of the rotating base 21 at intervals in the circumferential direction. The spin base 21 and the chuck pin 20 are included in a substrate holding unit that holds the substrate W horizontally. The substrate holding unit is also called a substrate holder.

The electric motor 23 provides rotational force to the rotating shaft 22. The rotation shaft 22 is rotated by the electric motor 23, whereby the substrate W can be rotated around the rotation axis A1. The electric motor 23 is included in a substrate rotating unit that rotates the substrate W around the rotation axis A1.

The chemical liquid supply unit 7 includes: a chemical liquid nozzle 30 that supplies chemical liquid to the upper surface of the substrate W; and a chemical liquid supply pipe 31 coupled to the chemical liquid nozzle 30. The chemical liquid supply pipe 31 is supplied with a chemical liquid such as hydrofluoric acid (hydrogen fluoride water: HF) from a chemical liquid supply source.

The liquid medicine supply unit 7 further includes a liquid medicine supply valve 32 interposed between the liquid medicine supply pipe 31, a liquid medicine flow rate adjustment valve 33, and a liquid medicine degassing unit 34. Furthermore, the chemical liquid degassing unit 34 may also be an inert gas bubbling chemical liquid cabinet (cabinet). The liquid medicine supply valve 32 opens and closes the flow path of the liquid medicine. The liquid medicine flow rate adjustment valve 33 adjusts the flow rate of the liquid medicine inside the liquid medicine supply pipe 31 according to its opening degree. The liquid medicine degassing unit 34 removes oxygen from the liquid medicine, which is the liquid medicine supplied to the liquid medicine supply pipe 31 from the liquid medicine supply source.

The chemical solution system is not limited to hydrofluoric acid, and may include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), and ammonia , Hydrogen peroxide water, organic acids (for example, citric acid, oxalic acid, etc.), organic bases (for example, TMAH: tetramethyl ammonium hydroxide (tetramethyl ammonium hydroxide), etc.), interfacial activity Liquid of at least one of an antiseptic and an antiseptic. As an example of mixing these chemical solutions, SPM (sulfuric acid/hydrogen peroxide mixture), SC1 (ammonia/hydrogen peroxide mixture), SC2 ( hydrochloric acid/hydrogen peroxide mixture; hydrochloric acid/hydrogen peroxide mixture) and so on.

The liquid chemical nozzle 30 is moved in the vertical direction (the direction parallel to the rotation axis A1) and the horizontal direction (the direction perpendicular to the rotation axis A1) by the liquid chemical nozzle moving unit 35. The liquid medicine nozzle 30 can be moved between the center position and the retracted position by moving in the horizontal direction. When the chemical liquid nozzle 30 is located in the central position, it opposes the rotation center C1 of the upper surface of the substrate W. When the chemical liquid nozzle 30 is in the retracted position, it does not face the upper surface of the substrate W. The liquid medicine nozzle 30 may also be located outside the cup body 6 in a plan view when it is located at the retracted position.

The rotation center C1 of the upper surface of the substrate W refers to the position where it intersects the rotation axis A1 on the upper surface of the substrate W. Unlike this embodiment, the chemical liquid nozzle 30 may be a fixed nozzle.

The rinsing liquid supply unit 8 includes a rinsing liquid nozzle 40 that supplies rinsing liquid to the upper surface of the substrate W; and a rinsing liquid supply pipe 41 coupled to the rinsing liquid nozzle 40. The flushing liquid supply pipe 41 is supplied with flushing liquid such as DIW from a flushing liquid supply source.

The rinsing liquid supply unit 8 further includes a rinsing liquid supply valve 42 interposed in the rinsing liquid supply pipe 41, a rinsing liquid flow rate adjusting valve 43, and a rinsing liquid degassing unit 44. The flushing liquid supply valve 42 opens and closes the flow path of the flushing liquid. The flushing fluid flow adjustment valve 43 adjusts the flushing fluid flow in the flushing fluid supply pipe 41 according to its opening degree. The rinsing liquid degassing unit 44 removes oxygen from the rinsing liquid, which is the rinsing liquid supplied from the rinsing liquid supply source to the rinsing liquid supply pipe 41.

The flushing liquid nozzle 40 is a fixed nozzle. Unlike this embodiment, the rinse liquid nozzle 40 may be a moving nozzle that can move in the horizontal direction and the vertical direction.

The so-called rinsing fluid is not limited to DIW, but can also be carbonated water, electrolyzed ionized water, ozone water, hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm), alkaline ionized water containing ammonia, etc., and reduced water (hydrogen water) .

The gas supply unit 9 includes a gas nozzle 50, a gas supply pipe 51, a gas supply valve 52, and a gas flow adjustment valve 53. The gas nozzle 50 supplies a gas such as _{nitrogen (N 2} ) gas to the central area of the upper surface of the substrate W. The gas supply pipe 51 is coupled to the gas nozzle 50. The gas supply valve 52 is sandwiched between the gas supply pipe 51 and used to open and close the gas flow path. The gas flow adjusting valve 53 is interposed between the gas supply pipe 51 and is used to adjust the flow of gas inside the gas supply pipe 51 according to its opening degree. In the gas supply pipe 51, a gas such as nitrogen is supplied from a gas supply source.

The gas supplied from the gas supply source to the gas supply pipe 51 is preferably an inert gas such as nitrogen. The inert gas system is not limited to nitrogen, and may be a gas that is inactive to the upper surface of the substrate W and the pattern. As an example of the inert gas, in addition to nitrogen, rare gases such as argon (argon) can be cited.

The gas nozzle 50 is moved in the vertical direction and the horizontal direction by the gas nozzle moving unit 55. The gas nozzle 50 can be moved between the center position and the retracted position by moving in the horizontal direction. The gas nozzle 50 is opposed to the rotation center C1 of the upper surface of the substrate W when it is located in the central position. The gas nozzle 50 is not opposed to the upper surface of the substrate W when it is in the retracted position.

The gas nozzle moving unit 55 includes, for example, a rotating shaft 56 along a vertical direction; a nozzle arm 57 coupled to the rotating shaft 56 and extending horizontally; and a robot arm driving mechanism 58 that drives the nozzle arm 57. The robot arm driving mechanism 58 swings the nozzle arm 57 horizontally by rotating the rotation shaft 56 around a vertical rotation axis. The robot arm drive mechanism 58 moves the nozzle arm 57 up and down by raising and lowering the rotation shaft 56 in the vertical direction. The robot arm driving mechanism 58 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that provides driving force to the ball screw mechanism.

The film thickness measuring unit 10 refers to a device for measuring the thickness of a liquid film such as a chemical solution by a non-contact method. As the non-contact method, for example, an infrared absorption method or an optical interference method can be cited.

The film thickness measuring unit 10 includes: a film thickness probe 60 having a light emitting part and a light receiving part; a film thickness measuring device 61 having a light source and a light measuring part; and a film thickness probe 60 and a film thickness measuring device 61 connected together Connecting line 62 of optical fiber. The film thickness probe 60 is attached to the nozzle arm 57. For this reason, the film thickness probe 60 can move in the horizontal direction and the vertical direction together with the gas nozzle 50.

FIG. 3 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 is equipped with a microcomputer, and controls a control target included in the substrate processing apparatus 1 according to a predetermined control program. More specifically, the controller 3 includes: a processor (CPU: Central Processing Unit; central processing unit) 3A, and a memory 3B storing a control program, and is executed by the processor 3A The control program is composed of various control methods used for substrate processing. In particular, the controller 3 controls the transport robots IR, CR, electric motor 23, nozzle moving units 35, 55, film thickness measuring device 61, and valves (medical solution supply valve 32, drug flow control valve 33, flushing liquid supply valve). 42. The operation of the flushing liquid flow adjustment valve 43, the gas supply valve 52, the gas flow adjustment valve 53, etc.).

4 is a cross-sectional view for explaining an example of the surface state of the substrate W processed by the substrate processing apparatus 1.

As described below, the substrate W carried into the substrate processing apparatus 1 refers to, for example, a semiconductor wafer on which polymer residue (residue after dry etching or ashing) has adhered to the surface and the metal film 70 (metal pattern) has been exposed .

The metal film 70 may be a single-layer film of copper, tungsten, or other metals, or a multi-layer film formed by stacking a plurality of metal films. The multilayer film may be, for example, a laminate film including a copper film and a CoWP (cobalt-tungsten-phosphorus; cobalt-tungsten-phosphorus) film laminated on the copper film. CoWP film refers to a cap film used to prevent diffusion.

As shown in FIG. 4, an interlayer insulating film 72 is formed on the surface of the substrate W. The interlayer insulating film 72 is dug down from the upper surface thereof to form a lower wiring groove 73. Copper wiring 74 is buried in the lower wiring groove 73. The copper wiring 74 is contained in the metal film 70. On the interlayer insulating film 72, a low-dielectric constant insulating film 76 as an example of a film to be processed is laminated through an etch stopper film 75. The low dielectric constant insulating film 76 is dug down from its upper surface to form an upper wiring groove 77. Furthermore, a via hole 78 is formed in the low dielectric constant insulating film 76 from the bottom surface of the upper wiring groove 77 to the surface of the copper wiring 74. Copper is buried in the upper wiring groove 77 and the via 78 in batches.

The upper wiring groove 77 and the via 78 are formed by forming a hard mask on the low-dielectric constant insulating film 76, and then performing a dry etching process to remove the hard mask from the low-dielectric constant insulating film 76. The exposed part of the cover is formed. After the upper wiring groove 77 and the via 78 are formed, an ashing process is performed, and the hard mask that has become unnecessary can be removed from the low dielectric constant insulating film 76.

During dry etching and ashing, the reaction product (polymer residue) containing the components of the low-k insulating film 76 or the hard mask will adhere to the surface of the low-k insulating film 76 (including the upper wiring groove). 77 and the inner surface of the guide hole 78) and so on. For this reason, after ashing, a polymer removing liquid is supplied to the surface of the substrate W, and a polymer removing step of removing polymer residues from the surface of the low dielectric constant insulating film 76 is performed. Hereinafter, a processing example of removing the polymer residue from the surface of such a substrate W will be described.

FIG. 5 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1. In the substrate processing performed by the substrate processing apparatus 1, for example, as shown in FIG. 5, based on the treatment schedule created by the controller 3, the substrate loading (S1), Chemical solution treatment (S2), rinse treatment (S3), drying treatment (S4), and substrate removal (S5).

In the substrate processing, first, the ashed substrate W is carried in from the carrier C to the processing unit 2 by the transfer robots IR and CR, and is delivered to the spin chuck 5 (S1). After that, the substrate W is horizontally held upward by the chuck pin 20 from the upper surface of the rotating base 21 during the period until it is carried out by the transfer robot CR (substrate holding step).

Next, after the transfer robot CR retreats to the outside of the processing unit 2, the chemical solution processing is started (S2).

The electric motor 23 rotates the rotating base 21. Thereby, the substrate W held horizontally by the spin chuck 20 is rotated (substrate rotation step). On the other hand, the liquid chemical nozzle moving unit 35 arranges the liquid chemical nozzle 30 at the liquid chemical processing position above the substrate W.

Then, the chemical liquid supply valve 32 is opened. Thereby, the chemical liquid is ejected (supply) from the chemical liquid nozzle 30 toward the upper surface of the substrate W in a rotating state. Since the chemical liquid nozzle 30 is located at the chemical liquid processing position, the chemical liquid discharged from the chemical liquid nozzle 30 adheres to the rotation center C1 of the upper surface of the substrate W. The supplied chemical liquid spreads over the entire upper surface of the substrate W by centrifugal force. Thereby, the upper surface of the substrate W can be processed by the chemical liquid.

Next, after a certain period of chemical solution treatment (S2), DIW flushing treatment (S3) is performed. In the DIW rinse process (S3), by replacing the chemical liquid on the substrate W with DIW, the chemical liquid can be removed from the substrate W.

Specifically, the chemical liquid supply valve 32 is closed, and the rinse liquid supply valve 42 is opened. Thereby, the rinse liquid can be supplied (discharged) from the rinse liquid nozzle 40 toward the upper surface of the substrate W. The rinse liquid discharged from the rinse liquid nozzle 40 adheres to the center portion of the upper surface of the substrate W. The DIW supplied to the substrate W spreads over the entire upper surface of the substrate W by centrifugal force. With this DIW, the liquid medicine on the substrate W can be washed away. During this period, the liquid chemical nozzle moving unit 35 causes the liquid chemical nozzle 30 to retract from above the substrate W to the side of the cup 6.

Next, a drying process for drying the substrate W is performed (S4).

Specifically, the flushing liquid supply valve 42 is closed. Then, the electric motor 23 rotates the substrate W at a high rotation speed (for example, 3000 rpm) faster than the rotation speed of the substrate W in the chemical solution treatment (S2) and the rinse solution treatment (S3). Thereby, a large centrifugal force will act on the rinse liquid on the substrate W, and the rinse liquid on the substrate W will be thrown away toward the periphery of the substrate W. In this way, the rinse liquid can be removed from the substrate W, and the substrate W will be dried. Then, when a predetermined time elapses after the high-speed rotation of the substrate W starts, the electric motor 23 stops the rotation of the substrate W by the rotating base 21.

After that, the transfer robot CR will enter the processing unit 2 and pick up the processed substrate W from the rotating chuck 5, and carry it out of the processing unit 2 (S5). The substrate W is delivered from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.

Next, the details of the liquid chemical treatment (S2 in Fig. 5) will be described.

Fig. 6 is a schematic anatomical view for explaining the state of the liquid medicine treatment (S2 of Fig. 5). In the chemical liquid treatment (S2 in FIG. 5), by supplying the chemical liquid to the upper surface of the substrate W, the liquid film 80 of the chemical liquid can be formed on the substrate W (liquid film forming step).

The electric motor 23 controls the rotation of the substrate W in a state where the liquid film 80 is formed on the substrate W (rotation control step). Specifically, it is preferable to control the rotation of the substrate W so that the rotation speed of the substrate W becomes 10 rpm or more and 300 rpm or less. The rotation speed of the substrate W is more preferably 10 rpm or more and 200 rpm or less. The rotation speed of the substrate W is more preferably 10 rpm or more and 100 rpm or less.

Furthermore, in the state where the liquid film 80 is formed on the substrate W, the supply of the chemical liquid from the chemical liquid nozzle 30 can be controlled by adjusting the opening degree of the chemical liquid flow rate adjusting valve 33 (the liquid chemical amount control step). Specifically, the supply amount (supply flow rate) of the liquid medicine from the liquid medicine nozzle 30 is preferably controlled so as to be 500 mL/min or more and 10 L/min or less. The supply amount of the chemical liquid from the chemical liquid nozzle 30 is more preferably 2.0 L/min or more and 10 L/min or less. Since the supply amount of the liquid medicine is larger, the thicker the liquid film 80 can be, so the supply amount of the liquid medicine is preferably as large as possible. In order to sufficiently ensure the supply amount of the liquid medicine, a plurality of (two or three) liquid medicine nozzles 30 may also be provided.

In this way, the rotation of the substrate W or the supply of the chemical liquid can be controlled. Thereby, the thickness T of the liquid film 80 can be adjusted so that the thickness T of the liquid film 80 becomes 100 micrometers or more and 1 cm or less (film thickness adjustment process). The thickness T of the liquid film 80 refers to the width of the liquid film 80 in the vertical direction. The thickness T of the liquid film 80 is preferably 200 μm or more and 1 cm or less. The thickness T of the liquid film 80 is more preferably 300 μm or more and 1 cm or less. The liquid film 80 does not necessarily cover the entire upper surface of the substrate W, as long as it covers at least the exposed area of the metal film 70 on the upper surface of the substrate W.

In the film thickness adjustment step, the gas supply valve 52 may also be opened. Thereby, gas such as nitrogen can be supplied from the gas nozzle 50 toward the upper surface of the substrate W (gas supply step). At this time, the gas nozzle 50 is arranged at a position that can blow the gas to the side of the rotation center C1 of the upper surface of the substrate W.

The side of the center of rotation C1 on the upper surface of the substrate W refers to the first position P1, which is 20 mm away from the center of rotation C1 on the upper surface of the substrate W, and the first position P1, which is 80 mm away from the center of rotation C1 on the upper surface of the substrate W. The area between the two positions P2. The side of the rotation center C1 on the upper surface of the substrate W also includes a first position P1 and a second position P2. For this reason, the gas can be ejected from the gas nozzle 50 toward the side of the rotation center C1 on the upper surface of the substrate W.

In the gas supply step, the amount of gas supplied from the gas nozzle 50 can be adjusted by adjusting the opening degree of the gas flow adjustment valve 53. The supply amount of gas from the gas nozzle 50 is preferably 5 L/min or more and 50 L/min or less. The supply amount of gas from the gas nozzle 50 is more preferably 5 L/min.

The thickness T of the liquid film 80 adjusted in the film thickness formation step can also be measured by the film thickness measurement unit 10 (film thickness measurement step). It is also possible to control the supply of the liquid medicine or the rotation of the substrate W based on the measured thickness T of the liquid film 80. Thereby, the thickness T of the liquid film 80 can be adjusted based on the measured thickness T of the liquid film 80. That is, the thickness T of the liquid film 80 is adjusted (controlled) in real time.

When the measured thickness T of the liquid film 80 is different from the intended value, a warning display may be displayed on an operation panel (not shown) or the like for operating the substrate processing apparatus 1. The case where the measured thickness T of the liquid film 80 is different from the intended value, for example, refers to the case where the measured thickness T of the liquid film 80 is less than 100 μm.

The gas nozzle moving unit 55 may move the film thickness probe 60 in the horizontal direction together with the gas nozzle 50. Thereby, the thickness T of the liquid film 80 at each position on the substrate W can be measured.

The following uses FIGS. 7 and 8 described later to measure the amount of corrosion of the metal film 70 (Cu film) in the case where hydrofluoric acid is used to process the substrate W in the chemical solution treatment (S2 in FIG. 5) ( The amount of etching) is the result of the experiment conducted.

Specifically, a liquid film 80 of hydrofluoric acid was formed on the substrate W in a rotating state, and the thickness T of the liquid film 80 was measured. Then, the upper surface of the substrate W was processed by holding the liquid film 80 on the substrate W for 1 minute, after which the etching amount of the Cu film was measured.

In this experiment, a wafer with a radius of 150 mm was used as the substrate W. This experiment is conducted for each rotation speed of a plurality of rotation speeds (200 rpm, 400 rpm, 600 rpm, 800 rpm, and 1000 rpm). The measurement of the thickness T of the liquid film 80 at each rotation speed is performed at a plurality of locations with different distances from the rotation center C1. The measurement of the thickness T of the liquid film 80 formed on the rotating substrate W is performed in a state where the upper surface (liquid film 80) of the substrate W is not sprayed with nitrogen. The concentration of hydrogen fluoride in the hydrofluoric acid used in this experiment was 0.05% by weight. The temperature of hydrofluoric acid used in this experiment was 24°C.

The measurement of the thickness T of the liquid film 80 is performed under both conditions when the supply amount of hydrofluoric acid is set to 2.0 L/min. The measurement of the etching amount of the Cu film was performed under both conditions when the supply amount of hydrofluoric acid was set to 0.5 L/min and when the supply amount of hydrofluoric acid was set to 2.0 L/min.

FIG. 7 is a graph showing the result of measuring the change in the thickness of the hydrofluoric acid liquid film 80 caused by the change in the rotation speed of the substrate W.

In the graph of FIG. 7, the horizontal axis is set to the distance from the rotation center C1 of the upper surface of the substrate W, and the vertical axis is set to the point located at a predetermined distance from the rotation center C1 of the upper surface of the substrate W The thickness T of the upper liquid film 80. FIG. 7 shows the measurement results of each rotation speed, and shows approximate curves derived from the measurement results of a plurality of parts according to each rotation speed.

As shown in FIG. 7, when the rotation speed is 400 rpm or more, the thickness T of the liquid film 80 becomes smaller than 100 μm by the distance from the rotation center C1 of the upper surface of the substrate W. On the other hand, when the rotation speed is 200 rpm, regardless of the distance from the rotation center C1 of the upper surface of the substrate W, the thickness T of the liquid film 80 exceeds 100 μm.

Specifically, when the substrate W is rotated at 200 rpm, the thickness T of the liquid film 80 at a distance of about 50 mm from the rotation center C1 of the upper surface of the substrate W is about 260 μm. On the other hand, when the substrate W is rotated at 1000 rpm, the thickness T of the liquid film 80 at a distance of about 50 mm from the rotation center C1 of the upper surface of the substrate W is less than 100 μm.

When the substrate W is rotated at 200 rpm, the thickness T of the liquid film 80 at a distance of about 145 mm from the rotation center C1 of the upper surface of the substrate W is about 120 μm. On the other hand, when the substrate W is rotated at a rotation speed of 400 rpm or higher, the thickness T of the liquid film 80 at a distance of about 145 mm from the rotation center C1 of the upper surface of the substrate W is less than 100 μm.

The curve of the two-dot chain line shown in FIG. 7 is a computer simulation of the liquid film 80 when the substrate W is rotated at 200 rpm under the state that nitrogen gas is sprayed on the upper surface (liquid film 80) of the substrate W. The result of thickness T. In this simulation, the nitrogen supply rate is set to 10L/min, and the position of the nitrogen gas injection is set to be from the side of the rotation center C1 on the upper surface of the substrate W (the distance from the rotation center C1 is about 20mm to 80mm) Location).

According to the simulation results, the thickness T of the liquid film 80 decreases at the position where the nitrogen gas has been sprayed, that is, the distance from the rotation center C1 is about 20mm to 80mm, and the distance from the rotation center C1 is about 80mm to 80mm. At the position of 145mm, the thickness T of the liquid film 80 will increase.

In detail, the thickness T of the liquid film 80 at a distance of about 50 mm from the rotation center C1 of the upper surface of the substrate W has been reduced to about 260 μm to about 220 μm. Then, the thickness T of the liquid film 80 at a distance of about 145 mm from the rotation center C1 of the upper surface of the substrate W has increased to about 120 μm to about 170 μm.

FIG. 8 is a graph showing the result of measuring the change in the etching amount of the Cu film caused by the change in the thickness of the liquid film 80 of hydrofluoric acid.

Referring to FIG. 8, the thickness of the portion lost in the Cu film is shown as the etching amount of the Cu film. The measurement of the thickness T of the liquid film 80 and the measurement of the etching amount of the Cu film are performed at four locations with different distances from the rotation center C1. In FIG. 8, the horizontal axis is the thickness T of the liquid film 80 of hydrofluoric acid, and the vertical axis is the etching amount of the Cu film at the position where the thickness T of the liquid film 80 is measured.

In FIG. 8, the measurement data is not distinguished in the rotation speed of the substrate W and the measurement location, but is distinguished in the supply amount of hydrofluoric acid. The measurement results when the supply amount of hydrofluoric acid is set to 0.5 L/min and the measurement results when the supply amount of hydrofluoric acid is set to 2.0 L/min are displayed respectively. The measurement result when hydrofluoric acid is supplied at 0.5L/min is displayed with "□". The measurement result when hydrofluoric acid is supplied at 2.0L/min is displayed as "◆".

As shown in FIG. 8, when the thickness T of the liquid film 80 is less than 100 μm, the etching amount of the Cu film is 1 nm to 7 nm (refer to the left side of the dotted line in FIG. 8). In contrast, when the thickness T of the liquid film 80 is 100 μm or more, in any measurement result, the etching amount of the Cu film is about 1 nm (refer to the right side of the dotted line in FIG. 8).

According to this experiment, if the thickness T of the liquid film 80 is 100 μm or more, it can be estimated that the etching amount of the Cu film can be sufficiently suppressed.

The reason why the Cu film still loses about 1nm when the thickness T of the liquid film 80 is 100μm or more can be considered to be due to other main factors, not the oxidation formed by the reaction of the dissolved oxygen in the hydrofluoric acid with the Cu film. Copper is etched by hydrofluoric acid.

According to this embodiment, in the liquid film forming step, a liquid film 80 of a chemical liquid such as hydrofluoric acid is formed on the substrate W. With this liquid film 80, the metal film 70 exposed on the upper surface of the substrate W can be covered. In the film thickness adjustment step, it is adjusted so that the thickness of the liquid film 80 becomes 100 μm or more. For this reason, the adjusted liquid film 80 has a sufficient thickness.

Since the liquid film 80 has a sufficient thickness, the liquid film 80 can be exposed to the atmosphere around the substrate W to prevent the oxygen dissolved in the chemical solution from reaching the upper surface of the substrate W. In addition, since the liquid film 80 has a sufficient thickness, the volume of the liquid film 80 is also sufficiently large. For this reason, it is possible to suppress the increase in the oxygen concentration in the liquid film 80 due to the dissolution of oxygen in the processing liquid supplied to the upper surface of the substrate W. Therefore, since the oxygen reacting with the metal film 70 is reduced, the oxidation of the metal film 70 can be suppressed.

Therefore, without reducing the oxygen concentration in the atmosphere around the substrate W, the oxidation of the metal film 70 caused by the oxygen in the chemical solution can be suppressed.

According to this embodiment, in the film thickness adjustment step, the rotation of the substrate W is controlled so that the rotation speed of the substrate W becomes 300 rpm or less, thereby adjusting the thickness T of the liquid film 80.

The liquid film 80 formed on the substrate W in the rotating state exerts centrifugal force. For this reason, when the rotation speed of the substrate W increases, the amount of the chemical liquid scattered outside the substrate W by the centrifugal force will increase, and the amount of the chemical liquid on the substrate W will decrease. Therefore, the thickness T of the liquid film 80 may become insufficient.

Therefore, in the film thickness adjustment step, the liquid film 80 can be made sufficiently thick by controlling the rotation of the substrate W so that the rotation speed of the substrate W is sufficiently reduced (being 300 rpm or less). Therefore, the oxidation of the metal film 70 can be suppressed.

According to this embodiment, in the film thickness adjustment step, the supply amount of the liquid medicine is controlled so that the supply amount of the liquid medicine becomes 2.0 L/min or more, thereby adjusting the thickness T of the liquid film 80.

As described above, by the centrifugal force acting on the liquid film 80 formed on the substrate W in a rotating state, the chemical liquid will be scattered outside the substrate W. For this reason, when the supply amount of the liquid chemical decreases, the amount of the liquid chemical on the substrate W decreases. Therefore, there is a possibility that the thickness T of the liquid film 80 may become insufficient.

Therefore, in the film thickness adjustment step, the liquid film 80 can be made thick enough by controlling the supply amount of the treatment liquid so that the supply amount of the chemical solution becomes sufficiently large (the method becomes 2.0 L/min or more). . Therefore, the oxidation of the metal film 70 can be suppressed.

According to this embodiment, the liquid film 80 is formed by supplying the chemical solution toward the center of rotation C1 on the upper surface of the substrate W in the liquid film forming step.

In the case of supplying the chemical solution toward the rotation center C1 on the upper surface of the substrate W, the position on the side of the rotation center C1 on the upper surface of the substrate W (especially, the distance from the rotation center C1 on the upper surface of the substrate W is about 20 mm) The liquid film 80 is more likely to become thicker than the position of about 80 mm from the center of rotation C1 of the upper surface of the substrate W). On the other hand, in the vicinity of the periphery of the upper surface of the substrate W, the liquid film 80 is easily thinned. In other words, the thickness T of the liquid film 80 in the upper surface of the substrate W tends to be uneven. When unevenness occurs in the thickness T of the liquid film 80, it is necessary to excessively decrease the rotation speed of the substrate W, or excessively increase the supply amount of the chemical liquid.

Therefore, in the film thickness adjustment step, the position on the side of the center of rotation C1 on the upper surface of the substrate W (especially, the position at a distance of about 20 mm from the center of rotation C1 on the upper surface of the substrate W and the distance from the center of rotation C1 on the upper surface of the substrate W) The center of rotation C1 on the upper surface is about 80 mm away from the position) by supplying gas, so that in addition to centrifugal force, the force of the gas that extrudes the liquid medicine toward the periphery of the substrate W can be applied to the position on the substrate W. Liquid medicine at a position lateral to the center of rotation C1 on the upper surface. As a result, the speed at which the chemical liquid located at a position lateral to the rotation center C1 on the upper surface of the substrate W moves toward the peripheral edge of the substrate W increases. For this reason, the thickness T of the liquid film 80 at a position lateral to the rotation center C1 on the upper surface of the substrate W will decrease, and the thickness T of the liquid film 80 in the vicinity of the periphery of the upper surface of the substrate W will increase. Thereby, the unevenness of the thickness T of the liquid film 80 can be reduced.

According to this embodiment, in the film thickness measurement step, the thickness T of the liquid film 80 adjusted in the film thickness adjustment step is measured. For this reason, the abnormality of the substrate processing such as the deviation of the thickness T of the liquid film 80 from the intended value in the film thickness adjustment step can be detected early.

According to this embodiment, in the film thickness adjustment step, the thickness T of the liquid film 80 can be adjusted based on the thickness T of the liquid film 80 measured in the film thickness measurement step. For this reason, in the film thickness adjustment step, the thickness T of the liquid film 80 can be adjusted accurately.

According to this embodiment, since it is not necessary to replace the atmosphere around the substrate W with an inert gas or the like, it is not necessary to provide a blocking plate 11 having a facing surface 11a facing the substrate W (refer to the two-dot chain line in FIG. 2 ). For this reason, it is easy to utilize the space inside the chamber 14.

Unlike this embodiment, even in the case where a blocking plate 11 (see the two-dot chain line in FIG. 2) having an opposing surface 11a facing the substrate W is provided, it is not necessary to treat the chemical solution ( In S2) of FIG. 5, the atmosphere around the upper surface of the substrate W is replaced with an inert gas, so that the blocking plate 11 is adjacent to the substrate W. Furthermore, it is not necessary to provide a cylindrical portion extending in the vertical direction on the blocking plate 11 in order to prevent the external atmosphere from entering the space between the substrate W and the facing surface 11 a. For this reason, the horizontal movement of the moving nozzle of the chemical liquid nozzle 30 or the gas nozzle 50 of this embodiment is not hindered by the blocking plate 11. Therefore, in comparison with a processing unit configured to replace the atmosphere around the upper surface of the substrate W with an inert gas, the degree of freedom in the configuration of each member can be increased in the processing unit 2.

The present invention can be implemented in other forms, and is not limited to the above-described embodiments.

For example, unlike the substrate processing performed by the substrate processing apparatus 1 of the above-mentioned embodiment, the liquid film forming step and the film thickness adjusting step may be performed in the DIW rinse processing (S3) in the same way as the chemical liquid processing (S2). .

In the above-mentioned embodiment, although the film thickness measuring unit 10 is already provided, different from the above-mentioned embodiment, there may be a case where the film thickness measuring unit 10 is not provided.

In the above-mentioned embodiment, the film thickness probe 60 of the film thickness measuring unit 10 is configured to move together with the gas nozzle 50 by the gas nozzle moving unit 55. However, unlike the above-mentioned embodiment, a nozzle moving unit different from the gas nozzle moving unit 55 may be provided. Then, the film thickness probe 60 may be configured to move in the horizontal direction and the vertical direction by the nozzle moving unit.

Although the embodiments of the present invention have been described in detail, these are only specific examples used to understand the technical content of the present invention. The present invention should not be construed as being limited to these specific examples. The scope of the present invention is only It is limited by the scope of the attached patent application.

This application corresponds to Japanese Patent Application No. 2017-022153 filed at the Japan Patent Office on February 9, 2017, and the entire disclosure of this application is incorporated herein by reference.

5‧‧‧Rotating Chuck

8‧‧‧Flushing fluid supply unit

9‧‧‧Gas supply unit

10‧‧‧Film thickness measurement unit

20‧‧‧Chuck pin

21‧‧‧Rotating base

22‧‧‧Rotation axis

30‧‧‧Medicinal Liquid Nozzle

50‧‧‧Gas nozzle

55‧‧‧Gas nozzle moving unit

57‧‧‧Nozzle arm

60‧‧‧Film Thickness Probe

61‧‧‧Film Thickness Measuring Device

80‧‧‧Liquid film

A1‧‧‧Rotation axis

C1‧‧‧Rotation Center

P1‧‧‧First position

P2‧‧‧Second position

T‧‧‧Thickness

W‧‧‧Substrate

Claims (10)

A substrate processing method includes: a substrate holding step of horizontally holding a substrate with a metal film on the exposed upper surface; a substrate rotation step of rotating the aforementioned substrate around a vertical axis of rotation; liquid film formation The step is to supply the degassed etching treatment liquid toward the center of rotation of the upper surface of the substrate, thereby forming a liquid film of the etching treatment liquid on the substrate; and the film thickness adjustment step is to face a distance from the substrate The position between the 20mm position of the rotation center of the upper surface and the position 80mm from the rotation center of the upper surface of the substrate is supplied with gas at a flow rate of 10L/min, while restraining the distance from the rotation center of the upper surface of the substrate The thickness of the liquid film at the position between the position of 20 mm and the position of 80 mm from the center of rotation of the upper surface of the substrate is controlled so that the supply flow rate of the etching treatment liquid becomes 2.0 L/min. The supply flow rate and the rotation of the substrate are controlled so that the rotation speed of the substrate becomes 200 rpm, thereby adjusting the thickness of the liquid film so that the thickness of the liquid film becomes 100 μm or more. The substrate processing method described in claim 1, wherein the metal film is a copper film. The substrate processing method according to claim 1 or 2, wherein the etching treatment liquid is hydrofluoric acid. The substrate processing method according to claim 1 or 2, further comprising: a film thickness measurement step, which measures the thickness of the liquid film adjusted in the film thickness adjustment step. The substrate processing method according to claim 4, wherein the film thickness adjustment step includes a step of adjusting the thickness of the liquid film based on the thickness of the liquid film measured in the film thickness measurement step. A substrate processing device includes: a substrate holding unit that horizontally holds a substrate with a metal film exposed on the upper surface; a substrate rotation unit that rotates the aforementioned substrate around a rotation axis in a vertical direction; and a processing liquid supply A unit that supplies the degassed etching solution toward the center of rotation of the upper surface of the substrate; a gas supply unit that supplies gas toward the upper surface of the substrate; and a controller that controls the substrate holding unit and the The substrate rotating unit and the aforementioned processing liquid supply unit; the aforementioned controller is programmed to execute the substrate holding step, the substrate rotating step, the liquid film forming step, and the film thickness adjustment step, and the substrate holding step keeps the substrate in the aforementioned The substrate holding unit, the substrate rotating step is to make the aforementioned substrate rotating unit The substrate is rotated, and the liquid film forming step is to supply the etching treatment liquid from the treatment liquid supply unit to the upper surface of the substrate, thereby forming a liquid film of the etching treatment liquid on the substrate. The film thickness adjustment step is From the gas supply unit toward a position between a position 20 mm from the center of rotation of the upper surface of the substrate and a position 80 mm from the center of rotation of the upper surface of the substrate, the gas is supplied at a flow rate of 10 L/min, while suppressing The thickness of the liquid film at a position between a position 20 mm from the center of rotation of the upper surface of the substrate and a position of 80 mm from the center of rotation of the upper surface of the substrate is 2.0L with the supply flow rate of the etching treatment liquid /min to control the flow rate of the etching treatment liquid supplied from the treatment liquid supply unit, and to control the rotation of the substrate by the substrate rotation unit so that the rotation speed of the substrate becomes 200 rpm, thereby The thickness of the liquid film is adjusted so that the thickness of the liquid film becomes 100 μm or more. The substrate processing apparatus according to claim 6, wherein the metal film is a copper film. The substrate processing apparatus according to claim 6 or 7, wherein the etching treatment liquid is hydrofluoric acid. The substrate processing apparatus according to claim 6 or 7, which further includes a film thickness measurement unit capable of measuring the thickness of the liquid film; the controller is programmed to execute a film thickness measurement step, and the film thickness measurement step By controlling the aforementioned film thickness measurement unit To measure the thickness of the liquid film adjusted in the film thickness adjustment step. The substrate processing apparatus according to claim 9, wherein the film thickness adjustment step includes a step of adjusting the thickness of the liquid film based on the thickness of the liquid film measured in the film thickness measurement step.

Images