TWI734207B - Substrate treatment device and method for controlling etching process - Google Patents

Abstract

A substrate treatment device comprises a substrate support module, a liquid delivery module, a detection module, and a control module. The substrate support module includes a rotary table that is adapted for permitting a substrate to be disposed thereon. The liquid delivery module includes a nozzle for delivering an etching liquid. The detection module includes a light source emitter used for emitting light to the substrate, and a spectrum receiver used for receiving light reflected from the substrate and generating spectral signals. The control module is electrically connected to the liquid delivery module and the detection module, and is configured to receive the spectral signals, generate real time spectral data corresponding to the spectral signals during the process of etching the substrate, and analyze the real time spectral data to get chracteristic data so as to determine if the etch end has been reached.

Description

Substrate processing device and control method of etching substrate

The present invention relates to a substrate processing device, in particular to a substrate processing device for etching a substrate and a control method for etching the substrate.

In the semiconductor manufacturing process, substrate processing equipment is often used to etch or clean the substrate. During the wet etching process of the existing substrate processing equipment, the etching end point cannot be accurately detected, and in order to ensure that all the layers to be etched can be etched and removed cleanly, the general way of operating the substrate processing equipment is to set a fixed process time for etching. , And the set process time is the estimated time to complete the etching plus at least 50% of the estimated time, that is, usually the process time is more than 1.5 times the estimated time to complete the etching to ensure that all The film to be etched can be removed cleanly.

However, an excessively long etching time will increase the amount of side etching, thereby causing the risk of deterioration of the quality of products with small line widths in advanced manufacturing processes. In addition, if there is a process variation during the etching process, it is possible that all the film layers to be etched may not be completely removed after the originally set process time ends, but the existing substrate processing apparatus cannot detect this abnormality in time.

Therefore, one of the objectives of the present invention is to provide a substrate processing apparatus that can solve at least one of the aforementioned problems.

Therefore, in some embodiments, the substrate processing apparatus of the present invention includes a substrate carrying module, a fluid supply module, a detection module, and a control module. The substrate carrying module includes a rotating table for setting a substrate. The fluid supply module includes a nozzle, and the nozzle is arranged corresponding to the rotating table to supply an etching liquid. The detection module includes a light source emitter and a spectrum receiver. The light source emitter is used for emitting light to the substrate, and the spectrum receiver is used for receiving the light reflected from the substrate and generating a spectrum signal. The control module is electrically connected to the fluid supply module and the detection module, and receives the spectrum signal during the etching process of the substrate and generates a real-time spectrum data corresponding to the received spectrum signal, and then analyzes the real-time spectrum data In order to obtain a feature data, it can be judged whether the etching end point has been reached.

In some embodiments, the real-time spectrum data is obtained by taking the average value A1 of the spectral intensity of a first waveband in the spectral signal and taking the average value A2 of the spectral intensity of a second waveband in the spectral signal to analyze the real-time spectrum The data is to generate a real-time parameter value R by subtracting A2 from A1, and the real-time parameter value R at each time point in the etching process is formed into a graph, and the slope of the graph is taken to obtain the characteristic data, and the positive and negative values are formed in the characteristic data. It is judged that the etching end point has been reached during the transition.

In some embodiments, the wavelength of the first wavelength band is 235 nm to 300 nm, and the wavelength of the second wavelength band is 570 nm to 700 nm.

In some embodiments, the real-time spectral data is a converted spectrum obtained after signal processing of the spectral signal, and analyzing the real-time spectral data is to analyze the waveform of the converted spectrum. The characteristic data is that the waveform of the converted spectrum appears It is judged that the etching end point has been reached when the characteristic spectrum waveform is used.

In some embodiments, the wavelength of the light emitted by the light source emitter is between 200 nm and 800 nm.

In some implementations, the detection module further includes a detection head. The detection head has a light-entering surface for the light emitted from the light source emitter and for the light reflected from the substrate to enter. In this way, the detection module further includes a driving mechanism connected to the detection head and controlled by the control module to drive the detection head to move between a working position and a standby position.

In some embodiments, the detection module further includes an air blowing mechanism, which is arranged adjacent to the detection head to blow air to the detection head when the detection head is controlled to move to the working position.

In some embodiments, the detection module of the substrate processing apparatus further includes a cleaning module, which is disposed adjacent to the standby position to clean the detection head when the detection head is controlled to move to the standby position.

In some embodiments, the cleaning module includes a cleaning tank for cleaning the detection head and a blowing drying mechanism for drying the detection head.

In some embodiments, the control module presets a first delay time, and the first delay time is from when the control module starts the fluid supply module to supply the etching solution to when the detection module starts to emit light The interval time.

In some embodiments, the control module presets a second delay time, and the second delay time is the interval time from when the control module determines that the etching end point has been reached to when the fluid supply module stops supplying the etching solution .

In some embodiments, the nozzle moves back and forth in a range relative to the substrate when the etching liquid is controlled to be supplied, and one round-trip is defined as a movement period. The control module presets to make the After the nozzle completes a movement period, the fluid supply module stops supplying the etching liquid.

In some implementations, the control module presets a permissible time range, and sets a process time according to the interval between starting the fluid supply module to supply the etching solution and determining that the etching end point has been reached, and then the process The time is compared with the allowable time range, and if the process time exceeds the allowable time range, an abnormal warning is generated.

One of the objectives of the present invention is to provide a control method for etching a substrate that can solve at least one of the aforementioned problems.

Therefore, in some embodiments, the method for controlling etching a substrate of the present invention is executed in a substrate processing apparatus. The substrate processing apparatus includes a substrate carrying module for carrying a substrate, and a fluid for supplying an etching solution. Supply module, a detection module for detecting the reflection spectrum of the substrate surface and generating a spectrum signal, and a control module. The method includes the following steps: making the control module in the process of etching the substrate Receive the spectrum signal and generate a real-time spectrum data corresponding to the received spectrum signal; analyze the real-time spectrum data to obtain a characteristic data; and judge whether the etching end point has been reached according to the characteristic data.

In some embodiments, the real-time spectrum data is obtained by taking the average value A1 of the spectral intensity of a first waveband in the spectral signal and taking the average value A2 of the spectral intensity of a second waveband in the spectral signal to analyze the real-time spectrum The data is to generate a real-time parameter value R by subtracting A2 from A1, and the real-time parameter value R at each time point in the etching process is formed into a graph, and the slope of the graph is taken to obtain the characteristic data, and the positive and negative values are formed in the characteristic data. It is judged that the etching end point has been reached during the transition.

In some embodiments, the wavelength of the first wavelength band is 235 nm to 300 nm, and the wavelength of the second wavelength band is 570 nm to 700 nm.

In some embodiments, the real-time spectral data is a converted spectrum obtained after signal processing of the spectral signal, and analyzing the real-time spectral data is to analyze the waveform of the converted spectrum. The characteristic data is that the waveform of the converted spectrum appears It is judged that the etching end point has been reached when the characteristic spectrum waveform is used.

In some embodiments, the control module presets a first delay time, so that the detection module is activated to emit light after the first delay time passes after the fluid supply module is activated to supply the etching solution.

In some embodiments, the control module presets a second delay time, so that the fluid supply module stops supplying the etching solution after the second delay time has elapsed after determining that the etching end point has been reached.

In some implementations, the control module presets a permissible time range, and sets a process time according to the interval between starting the fluid supply module to supply the etching solution and determining that the etching end point has been reached, and then the process The time is compared with the allowable time range, and if the process time exceeds the allowable time range, an abnormal warning is generated.

The present invention has at least the following effects: by accurately controlling the etching end point during the etching process, the small-line width precise etching (side etching) of the substrate of the advanced process can be easily controlled, and the process time can be saved to increase the production capacity and extend the etching solution. life. Furthermore, the variation of the etching process can be detected in real time throughout the entire process to ensure the etching quality of each substrate.

1 to 3, an embodiment of the substrate processing apparatus 100 of the present invention includes a substrate carrying module 1, a fluid supply module 2, a detection module 3, a control module 4, and a cleaning module 5. The substrate carrying module 1 includes a rotating table 11 for setting a substrate 6 for carrying the substrate 6 for rotation, and the rotating table 11 fixes the substrate 6 in a vacuum suction manner. The substrate 6 is a substrate 6 used in a semiconductor manufacturing process, such as a wafer. The fluid supply module 2 includes a nozzle 21, and the nozzle 21 is arranged corresponding to the rotating table 11 to supply an etching liquid. The nozzle 21 can be driven to move back and forth in a range relative to the substrate 6, and each round trip is defined as a movement period, that is, the nozzle 21 can be driven to move between two end points relative to the substrate 6 Swing, and a reciprocating cycle between the two end points is a cycle of movement. Usually the two end points correspond to the center and the edge of the substrate 6 respectively. However, the two end points can also be set to be located at the center and the edge of the corresponding substrate 6 according to actual needs. The position between the edges.

The detection module 3 includes a light source transmitter 31 and a spectrum receiver 32. The light source transmitter 31 is used to emit light to the substrate 6, and the spectrum receiver 32 is used to receive the light reflected from the substrate 6 and generate A spectral signal. The wavelength of the light emitted by the light source transmitter 31 is between 200 nm and 800 nm, and the spectrum receiver 32 includes a spectrometer to divide the reflected light into various wavelength bands to generate the spectrum signal. In this embodiment, the detection module 3 further includes a detection head 33 and a driving mechanism 34. The detection head 33 has a light-entering surface 331 for the light from the light source emitter 31 to emit and for the light reflected from the substrate 6 to enter. The distance between the light-entering surface 331 and the substrate 6 is preferably 20 mm to 100 mm , To obtain a better optical signal. Specifically, the detection head 33 is the end of a bundle of optical fibers connecting the light source transmitter 31 and the spectrum receiver 32, and some of the optical fibers are used to transmit the light emitted from the light source transmitter 31 to the substrate 6. A part of the optical fiber is used to transmit the light reflected from the substrate 6 to the spectrum receiver 32, and the light entrance and exit surface 331 is formed by the end of the bundle of optical fibers. The driving mechanism 34 is connected to the detection head 33 and is controlled by the control module 4 to drive the detection head 33 to move between a working position (as shown in FIG. 2) and a standby position (as shown in FIG. 3) , When the detection head 33 is located at the working position, the detection head 33 is located above the substrate 6 to emit light to the substrate 6 and receive reflected light, and when the detection head 33 is located at the standby position, it leaves the substrate 6. The driving mechanism 34 drives the detecting head 33 in a linear movement manner, for example, pneumatic cylinders, electric cylinders, etc. can be used. The cleaning module 5 is disposed adjacent to the standby position to clean the detection head 33 when the detection head 33 is controlled to move to the standby position, so as to ensure that the light entrance and exit surface 331 does not adhere to the splashed etching liquid. The cleaning module 5 includes a cleaning tank 51 for cleaning the detection head 33 and a blowing drying mechanism 52 for drying the detection head 33. The cleaning tank 51 provides deionized water to rinse the detection head 33, and then the blowing and drying mechanism 52 sprays nitrogen gas to remove the deionized water remaining on the detection head 33, and the detection head 33 is blown dry. In conjunction with FIG. 4, in a modified embodiment, the detection module 3 may further include an air blowing mechanism 35, which is disposed adjacent to the detection head 33 to receive the detection head 33. When the control is moved to the working position, air is blown to the detecting head 33 to prevent the etching liquid from being sprayed to the light entrance and exit surface 331 during the etching process.

The control module 4 is electrically connected to the substrate carrying module 1, the fluid supply module 2, the detection module 3, and the cleaning module 5 to control the substrate carrying module 1, the fluid supply module 2 , The detection module 3 and the cleaning module 5 operate. The control module 4 continuously receives the spectrum signal measured by the detection module 3 during the etching process of the substrate 6 and generates a real-time spectrum data corresponding to the received spectrum signal, and then analyzes the real-time spectrum data to obtain a characteristic According to the data, it can be judged whether the etching end point has been reached.

In detail, referring to FIG. 5 and FIG. 6, for example, the substrate 6 has a pattern layer 61, a layer to be etched 62, and an etching stop layer 63. The pattern layer 61 and the layer to be etched 62 are both copper metal layers. The stop layer 63 is a titanium metal layer. The following takes the etching process of the aforementioned substrate 6 as an example, that is, the to-be-etched layer 62 is a copper metal layer, and the etching stop layer 63 is a titanium metal layer, to specifically describe the method for the control module 4 to determine the etching end point. In this embodiment, the real-time spectrum data is a converted spectrum obtained after signal processing of the spectrum signal, and analyzing the real-time spectrum data is to analyze the waveform of the converted spectrum, and the characteristic data is that the waveform of the converted spectrum has a characteristic It is judged that the etching end point has been reached during the spectrum waveform. Wherein, the method of signal processing the spectrum signal to form the conversion spectrum is based on the spectrum signal measured at 2 seconds after the start of the etching process, and then the spectrum signal measured in the subsequent etching process and the The spectrum intensity of the basic spectrum is divided to obtain the converted spectrum. Next, analyze the waveform of the converted spectrum. In this embodiment, take the converted spectrum in the 200-800nm band to analyze whether there is a peak waveform. The best range is between 250-350nm, and the peak waveform is a feature. The spectral waveform, that is, the appearance of the characteristic spectral waveform is the characteristic data of this embodiment, and it can be judged that the etching end point has been reached.

In this embodiment, the algorithm for identifying characteristic spectral waveforms is briefly described as follows: Left represents the average value of the spectral intensity in the 250-280nm band (hereinafter referred to as the left band) in the converted spectrum, and Center represents the 281-320nm band in the converted spectrum ( The average value of the spectral intensity of the 321-350nm band (hereinafter referred to as the right band) in the conversion spectrum is represented by Right, which is defined as A: If(Center-Left)>0.03, then A=1, else A=0, this formula is used to judge whether the peak of the characteristic spectrum waveform appears in the middle band, which means whether the Center value minus the Left value is greater than 0.03, if yes Then A=1, at this time it is judged that the mountain peak appears in the middle band, if otherwise A=0, it is judged that the mountain does not appear in the middle band at this time; B: If(Center-Right)>0.02, then B=1, else B=0, this formula is used to judge whether the peak of the characteristic spectrum waveform appears in the middle band, it means whether the Center value minus the Right value is greater than 0.02, if yes Then B=1, at this time it is judged that the mountain peak appears in the middle band, if otherwise B=0, it is judged that the mountain does not appear in the middle band at this time; C: If(Center/Left)>1.02, then C=1, else C=0, this formula is used to determine whether the slope of the left band of the characteristic spectrum waveform conforms to the preset waveform, which indicates whether the Center value divided by the Left value is greater than 1.02, if yes, then C=1, if otherwise, C=0; D: If(Center/Right)>1.02, then D=1, else D=0, this formula is used to judge whether the slope of the right band of the characteristic spectrum waveform conforms to the preset waveform, which indicates whether the Center value divided by the Right value is greater than 1.02, if yes, then D=1, if otherwise, D=0; EPD Trend=A×0.25+B×0.25+C×0.25+D×0.25 When EPD Trend=1, that is, when A, B, C, and D are all equal to 1, it means that the four judgment conditions of A, B, C, and D are all met. At this time, it can be judged that the characteristic spectrum waveform appears, that is, the etching end point is reached. The condition values set in A, B, C, and D above are set based on the experimentally confirmed reflection spectrum waveform of the same process substrate that has been etched. It can be adjusted according to the reflection spectrum waveform of the film on different substrates. That is, it can be adjusted according to the reflection spectrum waveform of different materials of the film layer on the substrate.

In addition, since the fluid supply module 2 is activated until the etching solution actually reaches the surface of the substrate 6 may be delayed for a period of time, the control module 4 can also be preset with a first delay time, the first delay time being the The interval time of the control module 4 from activating the fluid supply module 2 to supply the etching solution to activating the detection module 3 to emit light to ensure that the surface of the substrate 6 has already been etched when the detection module 3 is activated . Furthermore, the control module 4 can also preset a second delay time, and the second delay time is the interval from when the control module 4 determines that the etching end point has been reached to when the fluid supply module 2 stops supplying the etching solution The second delay time is used to slightly increase the etching time to ensure that the layer 62 to be etched is removed cleanly. Alternatively, the control module 4 can preset the nozzle 21 to complete a movement cycle when determining that the etching end point has been reached, and then stop the fluid supply module 2 from supplying the etching solution, which can also ensure that the layer 62 to be etched is removed. In addition to clean. Further, the control module 4 can also preset a permissible time range, and set the interval time from when the fluid supply module 2 is activated to supply the etching solution to the determination that the etching end point has been reached as a process time, and then the process time The time is compared with the allowable time range, and if the process time exceeds the allowable time range, an abnormal warning is generated. That is to say, in the etching process, the time taken from the beginning of the etching to the end of the etching (process time) exceeds or is less than the usual time (allowable time range) required for the process known from experience, the control module 4 That is, an abnormal warning is generated, so that the operator of the substrate processing apparatus 100 can timely check whether there is an abnormal condition in the manufacturing process.

In a changed implementation aspect, the real-time spectral data is obtained by taking the average value A1 of the spectral intensity of a first waveband in the spectral signal and taking the average value A2 of the spectral intensity of a second waveband in the spectral signal, and analyze the real-time The spectrum data is A1 minus A2 to generate a real-time parameter value R, and the real-time parameter value R at each time point in the etching process is formed into a graph, the slope of the graph is taken to obtain the characteristic data, and the characteristic data is formed It is judged that the etching end point has been reached when the positive and negative transitions. Specifically, the wavelength of the first wave band is 235 nm to 300 nm, and the wavelength of the second wave band is 570 nm to 700 nm. During the etching process, the real-time parameter value R will become larger and larger, and the real-time parameter value R will become smaller when the etching end point is reached, that is to say, the graph formed by the real-time parameter value R changing with time is at the etching end point The slope of the previous section is positive, and when the end of the etching is reached, the curve has a turning point, that is, the slope forms a positive-negative transition. In this way, the etching end point can be judged by the characteristic data generated by the graph formed by the real-time parameter value R changing over time.

In summary, by precisely controlling the etching end point during the etching process, the precise etching (side etching) of the small line width of the substrate 6 of the advanced process can be easily controlled, and the process time can be saved to increase the productivity and prolong the life of the etching solution. . Furthermore, the variation of the etching process can be detected in real time throughout the entire process to ensure the etching quality of each substrate 6.

However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

100: Substrate processing device 1: substrate carrying module 11: Rotating table 2: Fluid supply module 21: Nozzle 3: Detection module 31: light source emitter 32: Spectral receiver 33: Detection head 331: Into the Glossy 34: drive mechanism 35: blowing mechanism 4: Control module 5: Cleaning the module 51: cleaning tank 52: Blow drying mechanism 6: Substrate 61: pattern layer 62: layer to be etched 63: etch stop layer

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: Fig. 1 is a block diagram of an embodiment of a substrate processing apparatus of the present invention; 2 is a schematic diagram of the state of the etching process in this embodiment; 3 is a schematic diagram of a state where the etching process is not performed in this embodiment; FIG. 4 is a schematic diagram of a modified implementation state of the detection module of this embodiment; Figure 5 is a schematic side view illustrating the substrate of the embodiment before etching; and Fig. 6 is a schematic side view illustrating the substrate of the embodiment after the etching is completed.

100: Substrate processing device

1: substrate carrying module

11: Rotating table

2: Fluid supply module

21: Nozzle

3: Detection module

31: light source emitter

32: Spectral receiver

33: Detection head

34: drive mechanism

35: blowing mechanism

4: Control module

5: Cleaning the module

51: cleaning tank

52: Blow drying mechanism

Claims (17)

A substrate processing device includes: a substrate carrying module, including a rotating table for setting a substrate; a fluid supply module, including a nozzle, the nozzle corresponding to the rotating table to supply an etching solution; a detection mold The set includes a light source transmitter and a spectrum receiver, the light source transmitter is used to emit light to the substrate, the spectrum receiver is used to receive the light reflected from the substrate and generate a spectrum signal; and a control module, and the The fluid supply module and the detection module are electrically connected, and receive the spectrum signal during the etching process of the substrate and generate a real-time spectrum data corresponding to the received spectrum signal, and then analyze the real-time spectrum data to obtain a characteristic data and It can be used to determine whether the etching end point has been reached; wherein, the real-time spectrum data is based on the average value A1 of the spectral intensity of a first band in the spectral signal and the average value A2 of the spectral intensity of a second band in the spectral signal. Analyzing the real-time spectral data is to generate a real-time parameter value R by subtracting A2 from A1, and the real-time parameter value R at each time point in the etching process is formed into a graph, and the slope of the graph is taken to obtain the characteristic data. When the characteristic data forms a positive-negative transition, it is judged that the etching end point has been reached; or the real-time spectrum data is a converted spectrum obtained after signal processing of the spectrum signal, and the analysis of the real-time spectrum data is to analyze the waveform of the converted spectrum, and the characteristic data is the When a characteristic spectrum waveform appears in the waveform of the converted spectrum, it is judged that the etching end point has been reached. The substrate processing apparatus according to claim 1, wherein the wavelength of the first band is 235nm to 300nm, and the wavelength of the second band is 570nm to 700nm. The substrate processing apparatus according to claim 1, wherein the wavelength of the light emitted by the light source emitter is between 200 nm and 800 nm. The substrate processing apparatus according to claim 1, wherein the detection module further includes a detection head, the detection head having a light entrance and exit surface for the light emitted from the light source emitter and for the light reflected from the substrate Enter. The substrate processing apparatus according to claim 4, wherein the detection module further includes a driving mechanism connected to the detection head and controlled by the control module to drive the detection head to a working position and a Move between standby positions. The substrate processing apparatus according to claim 4, wherein the detection module further includes an air blowing mechanism, and is arranged adjacent to the detection head to blow air when the detection head is controlled to move to the working position to prevent the The etching liquid is sprayed to the light entrance and exit surface of the detection head. According to claim 4, the substrate processing apparatus further includes a cleaning module arranged adjacent to the standby position to clean the detection head when the detection head is controlled to move to the standby position. The substrate processing apparatus according to claim 7, wherein the cleaning module includes a cleaning tank for cleaning the detection head and a blowing drying mechanism for drying the detection head. The substrate processing apparatus according to claim 1, wherein the control module is preset with a first delay time, and the first delay time is from the time when the control module starts the fluid supply module to supply the etching solution to the start of the detection The interval time for the module to emit light. The substrate processing apparatus according to claim 1, wherein the control module is preset with A second delay time. The second delay time is the interval time from when the control module determines that the etching end point has been reached to when the fluid supply module stops supplying the etching solution. The substrate processing apparatus according to claim 1, wherein the nozzle moves back and forth in a range relative to the substrate when the nozzle is controlled to supply the etching solution, and one round-trip is defined as a movement period, and the control module is preset to determine that the etching has been reached At the end point, the nozzle is still made to complete a movement cycle and then the fluid supply module stops supplying the etching liquid. The substrate processing apparatus according to claim 1, wherein the control module presets an allowable time range, and is set as a process time according to the interval time from when the fluid supply module is activated to supply the etching solution to the determination that the etching end point has been reached , And then compare the process time with the allowable time range, and if the process time exceeds the allowable time range, an abnormal warning is generated. A method for controlling etching a substrate is performed in a substrate processing device, the substrate processing device includes a substrate carrying module for carrying a substrate, a fluid supply module for supplying an etching solution, and for detecting the A detection module and a control module that reflect the spectrum of the substrate surface and generate a spectrum signal, and a control module. The method includes the following steps: making the control module receive the spectrum signal during the substrate etching process and correspond to the received spectrum signal The spectrum signal generates a real-time spectrum data; analyzes the real-time spectrum data to obtain a characteristic data; and judges whether the etching end point has been reached according to the characteristic data; wherein the real-time spectrum data is the spectral intensity of a first band in the spectrum signal The average value A1 and take the second band of the spectral signal The average value of the spectrum intensity A2, analyze the real-time spectrum data by subtracting A2 from A1 to generate a real-time parameter value R, and form a graph of the real-time parameter value R at each time point in the etching process, and take the slope of the graph Obtain the characteristic data, and judge that the etching end point has been reached when the characteristic data forms a positive-negative transition; or the real-time spectrum data is a conversion spectrum obtained after signal processing the spectrum signal, and analyzing the real-time spectrum data is to analyze the conversion spectrum The characteristic data is that when a characteristic spectral waveform appears in the waveform of the converted spectrum, it is judged that the etching end point has been reached. The method for controlling etching a substrate according to claim 13, wherein the wavelength of the first wavelength band is 235 nm to 300 nm, and the wavelength of the second wavelength band is 570 nm to 700 nm. The control method for etching a substrate according to claim 13, wherein the control module is preset with a first delay time, so that the detection mode is started after the first delay time passes after the fluid supply module is started to supply the etching liquid Group to emit light. The control method for etching a substrate according to claim 13, wherein the control module is preset with a second delay time, so that the fluid supply module stops supplying the etching after the second delay time has passed after determining that the etching end point has been reached liquid. The control method for etching a substrate according to claim 13, wherein the control module presets a permissible time range, and the interval time from when the fluid supply module is activated to supply the etching liquid to the judgment that the etching end point is reached is set to one The process time is compared with the allowable time range. If the process time exceeds the allowable time range, an abnormal warning is generated.

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