TWI732538B - Electronic package - Google Patents
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本發明係關於一種半導體封裝製程,特別是關於一種多晶片堆疊型式之電子封裝件及其製法。 The present invention relates to a semiconductor packaging process, in particular to a multi-chip stacked type electronic package and its manufacturing method.
隨著電子產業的發達,現今的電子產品已趨向輕薄短小與功能多樣化的方向設計,半導體封裝技術亦隨之開發出不同的封裝型態。為滿足半導體裝置之高積集度(Integration)、微型化(Miniaturization)以及高電路效能等需求,遂而發展出覆晶(Flip chip)接合封裝技術,且為求提昇單一半導體封裝件之性能(ability)與容量(capacity)以符合電子產品小型化、大容量與高速化之趨勢,業界遂係於一半導體封裝件中呈現多晶片模組化(Multichip Module,簡稱MCM)的形式,以在單一載板(如封裝基板或導線架)上覆晶堆疊多個晶片,如第TWI331371號專利(下稱前案一)或第TWI527170號專利(下稱前案二)。 With the development of the electronics industry, today's electronic products have tended to be designed in the direction of lightness, thinness, shortness and diversification of functions, and semiconductor packaging technologies have also developed different packaging types. In order to meet the requirements of high integration, miniaturization and high circuit performance of semiconductor devices, flip chip bonding packaging technology was developed, and in order to improve the performance of a single semiconductor package ( ability) and capacity (capacity) to meet the trend of miniaturization, large-capacity, and high-speed electronic products. Flip-chip stacking multiple chips on a carrier (such as a package substrate or a lead frame), such as Patent No. TWI331371 (hereinafter referred to as the first case) or Patent No. TWI527170 (hereinafter referred to as the second case).
惟,習知多晶片模組化中,如前案一,其上、下晶片之間具有間隙,導致晶片容易於後續高溫製程時產生翹曲現象,甚至破裂。 However, in the conventional multi-chip modularization, as in the previous case, there is a gap between the upper and lower chips, which causes the chip to easily warp and even break during the subsequent high-temperature manufacturing process.
再者,於前案一中,用於電性連接上、下晶片之導電凸塊(如標號39)並未被封裝膠體(如標號38)包覆,故仍無法有效分散該些導電 凸塊之應力,致使晶片容易發生翹曲,以致於上、下晶片之間的對位產生偏移,甚至於對上、下晶片之間的電性連接造成極大影響,導致良率過低及產品可靠度不佳等問題。更甚者,當堆疊越多層晶片時,應力會不斷累加,使翹曲程度朝同一方向彎折越明顯,更容易發生晶片斷裂。 Furthermore, in the previous case 1, the conductive bumps (such as 39) used to electrically connect the upper and lower chips are not covered by the encapsulant (such as 38), so the conductive bumps (such as 38) cannot be effectively dispersed. The stress of the bumps causes the wafers to easily warp, which results in the offset between the upper and lower wafers, and even greatly affects the electrical connection between the upper and lower wafers, resulting in low yield and Poor product reliability and other issues. What's more, when stacking more layers of wafers, the stress will continue to accumulate, making the degree of warpage bend in the same direction more obviously, and wafer breakage is more likely to occur.
另一方面,前案二之上、下晶片之間也填充底膠(如標號18a,18b,18c)以包覆用於電性連接上、下晶片之導電凸塊(如標號172,173,262,263,25a),但該些導電凸塊與該底膠的熱膨脹係數(Coefficient of thermal expansion,簡稱CTE)不匹配(mismatch),因而容易發生熱應力不均勻之情況,致使熱循環(thermal cycle)時,造成底膠與晶片之間相互推擠而使晶片發生翹曲(warpage),以致於上、下晶片之間的對位產生偏移,甚至於對上、下晶片之間的電性連接造成極大影響,導致良率過低及產品可靠度不佳等問題。更甚者,當堆疊越多層晶片時,應力會不斷累加,使翹曲程度朝同一方向彎折越明顯,更容易發生晶片斷裂。 On the other hand, in the second case, primer (such as 18a, 18b, 18c) is also filled between the upper and lower chips to cover the conductive bumps (such as 172, 173, 262, 263, 25a) used to electrically connect the upper and lower chips However, the conductive bumps and the coefficient of thermal expansion (CTE) of the primer do not match (mismatch), so uneven thermal stress is prone to occur, resulting in thermal cycle (thermal cycle), resulting in bottom The glue and the chip are pushed against each other to cause warpage of the chip, so that the alignment between the upper and lower chips is shifted, and even the electrical connection between the upper and lower chips is greatly affected. This leads to problems such as low yield and poor product reliability. What's more, when stacking more layers of wafers, the stress will continue to accumulate, making the degree of warpage bend in the same direction more obviously, and wafer breakage is more likely to occur.
又,雖然前案二以封裝膠體(如標號19a,19b,19c)包覆底膠,以輔助該底膠分散該些導電凸塊之應力,但該封裝膠體並未包覆該些導電凸塊,並無法有效分散該些導電凸塊之應力。 In addition, although the second case of the previous case uses an encapsulant (such as 19a, 19b, 19c) to cover the primer to assist the primer to disperse the stress of the conductive bumps, the encapsulant does not cover the conductive bumps , And cannot effectively disperse the stress of these conductive bumps.
因此,如何克服上述習知技術的種種問題,實已成為目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned conventional technology has actually become an urgent problem to be solved at present.
鑑於上述習知技術之缺失,本發明係提供一種電子封裝件,係包括:承載件;第一封裝模組,係設於該承載件上,且包含至少一第一 電子元件,且該第一電子元件之下表面係定義出第一佈設區域,該第一佈設區域係佈設有第一包覆部及第二包覆部的其中一者,該第二包覆部的材質不同於該第一包覆部之材質;以及第二封裝模組,係疊設於該第一封裝模組上,且包含相堆疊之複數第二電子元件,且各該第二電子元件之下表面係分別定義出第二佈設區域,以令複數該第二佈設區域之至少其中一者佈設有該第一包覆部及該第二包覆部相對佈設於該第一佈設區域的另外一者,其中,該第一封裝模組與該第二封裝模組之間係定義有一應力平衡線,以藉由該第一包覆部與該第二包覆部之配置,使該第一封裝模組之應變與該第二封裝模組之應變係呈互補,且該第一封裝模組之應力與該第二封裝模組之應力大致相互抵消。 In view of the deficiencies of the above-mentioned conventional technologies, the present invention provides an electronic package, which includes: a carrier; a first package module is disposed on the carrier and includes at least one first Electronic component, and the lower surface of the first electronic component defines a first arrangement area, the first arrangement area is arranged with one of the first covering portion and the second covering portion, the second covering portion The material of is different from the material of the first cladding part; and the second package module is stacked on the first package module and includes a plurality of second electronic components stacked on top of each other, and each of the second electronic components The lower surface defines a second layout area respectively, so that at least one of the plurality of second layout areas is provided with the first covering portion and the second covering portion relative to the other of the first deployment area. One, wherein a stress balance line is defined between the first package module and the second package module, so that the first encapsulation part and the second encapsulation part are arranged so that the first The strain of the package module and the strain of the second package module are complementary, and the stress of the first package module and the stress of the second package module substantially cancel each other out.
前述之電子封裝件中,該第一包覆部與該第二包覆部係局部佈設於該第一佈設區域上。 In the aforementioned electronic package, the first covering portion and the second covering portion are partially arranged on the first arrangement area.
前述之電子封裝件中,該第一包覆部與該第二包覆部係局部佈設於該第二佈設區域上。 In the aforementioned electronic package, the first covering portion and the second covering portion are partially arranged on the second arrangement area.
前述之電子封裝件中,該第一包覆部係全部佈設於該第一佈設區域上。 In the aforementioned electronic package, the first covering part is all arranged on the first arrangement area.
前述之電子封裝件中,該第一包覆部係全部佈設於該第二佈設區域上。 In the aforementioned electronic package, the first covering part is all arranged on the second arrangement area.
前述之電子封裝件中,該第二包覆部係全部佈設於該第一佈設區域上。 In the aforementioned electronic package, the second covering portion is all arranged on the first arrangement area.
前述之電子封裝件中,該第二包覆部係全部佈設於該第二佈設區域上。 In the aforementioned electronic package, the second covering part is all arranged on the second arrangement area.
前述之電子封裝件中,該第一包覆部之熱膨脹係數係不同於該第二包覆部之熱膨脹係數。 In the aforementioned electronic package, the coefficient of thermal expansion of the first covering portion is different from the coefficient of thermal expansion of the second covering portion.
前述之電子封裝件中,該第二包覆部係為固態填充體。 In the aforementioned electronic package, the second covering part is a solid filler.
前述之電子封裝件中,該複數第二電子元件係藉由複數導電元件相互堆疊。 In the aforementioned electronic package, the plurality of second electronic components are stacked on each other by a plurality of conductive components.
前述之電子封裝件中,該第二電子元件係藉由複數導電元件堆疊於該第一電子元件上。 In the aforementioned electronic package, the second electronic element is stacked on the first electronic element by a plurality of conductive elements.
前述之電子封裝件中,該第一電子元件係藉由複數導電元件堆疊於該承載件上。 In the aforementioned electronic package, the first electronic element is stacked on the carrier by a plurality of conductive elements.
前述之電子封裝件中,該承載件上係堆疊複數該第一電子元件,且各該第一電子元件係藉由複數導電元件相互堆疊。 In the aforementioned electronic package, a plurality of the first electronic elements are stacked on the carrier, and each of the first electronic elements is stacked on each other by a plurality of conductive elements.
前述之電子封裝件中,復包括包覆該第一電子元件與第二電子元件之封裝層。 The aforementioned electronic package includes an encapsulation layer covering the first electronic component and the second electronic component.
前述之電子封裝件中,該第一佈設區域係定義出一第一區段及鄰接該第一區段之第二區段,以令該第一區段呈十字形或矩形。 In the aforementioned electronic package, the first layout area defines a first section and a second section adjacent to the first section, so that the first section is cross-shaped or rectangular.
前述之電子封裝件中,該第二佈設區域係定義出一第一區段及鄰接該第一區段之第二區段,以令該第一區段呈十字形或矩形。 In the aforementioned electronic package, the second layout area defines a first section and a second section adjacent to the first section, so that the first section is cross-shaped or rectangular.
前述之電子封裝件中,該第二包覆部係佈設於該第一或第二佈設區域之角落處。 In the aforementioned electronic package, the second covering portion is arranged at the corner of the first or second arrangement area.
前述之電子封裝件中,該第二包覆部係佈設於該第一或第二佈設區域之相對兩外側。 In the aforementioned electronic package, the second covering portion is arranged on two opposite outer sides of the first or second arrangement area.
由上可知,本發明之電子封裝件,主要藉由該第一與第二包覆部之組合設計,以產生不同方向的應變,故相較於習知技術,本發明可依據該電子封裝件之整體應變狀況,佈設該第一與第二包覆部以調整該電子封裝件之應力分佈,使該電子封裝件之翹曲程度能獲得最佳的調控。 It can be seen from the above that the electronic package of the present invention is mainly designed by the combination of the first and second cladding parts to generate strains in different directions. Therefore, compared with the prior art, the present invention can be based on the electronic package For the overall strain condition, the first and second cladding parts are arranged to adjust the stress distribution of the electronic package, so that the degree of warpage of the electronic package can be optimally controlled.
1,2,3,4:電子封裝件 1,2,3,4: electronic package
1a:第一封裝模組 1a: The first package module
1b:第二封裝模組 1b: The second package module
1c:包覆結構 1c: cladding structure
10:承載件 10: Carrier
11:第一電子元件 11: The first electronic component
11a:覆晶側 11a: Flip chip side
11b:堆疊側 11b: Stack side
12:第二電子元件 12: The second electronic component
12a:覆晶側 12a: Flip chip side
12b:堆疊側 12b: Stack side
13:導電元件 13: conductive element
14,24:第一包覆部 14,24: The first cladding part
15,25:第二包覆部 15,25: The second covering part
16:封裝層 16: Encapsulation layer
A:第一佈設區域 A: The first deployment area
A’:第二佈設區域 A’: The second deployment area
A1:第一區段 A1: The first section
A2:第二區段 A2: Second section
F:填入方向 F: Fill in the direction
L:應力平衡線 L: Stress balance line
S1:第一填充空間 S1: The first filling space
S2:第二填充空間 S2: second filling space
S3:第三填充空間 S3: third filling space
S4:第四填充空間 S4: The fourth filling space
W1,W2:翹曲方向 W1, W2: Warpage direction
第1圖係為本發明之電子封裝件之其中一實施例之剖面示意圖。 FIG. 1 is a schematic cross-sectional view of one embodiment of the electronic package of the present invention.
第1’及1”圖係為第1圖之不同態樣之上視示意圖。 Figures 1'and 1" are schematic top views of Figure 1 in different aspects.
第1A及1A’圖係為第1圖之其它態樣之剖面示意圖。 Figures 1A and 1A' are schematic cross-sectional views of other aspects of Figure 1.
第2圖係為本發明之電子封裝件之另一實施例之剖面示意圖。 Figure 2 is a schematic cross-sectional view of another embodiment of the electronic package of the present invention.
第2’、2A及2A’圖係為第2圖之其它態樣之剖面示意圖。 Figures 2', 2A and 2A' are schematic cross-sectional views of other aspects of Figure 2.
第3圖係為本發明之電子封裝件之其它實施例之剖面示意圖。 FIG. 3 is a schematic cross-sectional view of other embodiments of the electronic package of the present invention.
第3A及3A’圖係為第3圖之其它態樣之剖面示意圖。 Figures 3A and 3A' are schematic cross-sectional views of other aspects of Figure 3.
第4及4’圖係為第1圖之其它不同實施例之剖面示意圖。 Figures 4 and 4'are schematic cross-sectional views of other different embodiments of Figure 1.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“第一”、“第二”、“第三”、“上”、 “下”、及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings in this manual are only used to match the content disclosed in the manual for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment, without affecting the effects and objectives that can be achieved by the present invention, should still fall within the scope of the present invention. The technical content disclosed by the invention can be covered. At the same time, references in this specification include "first", "second", "third", "shang", The terms "下" and "一" are only for ease of description and are not used to limit the scope of implementation of the present invention. The change or adjustment of the relative relationship between them, without substantive changes to the technical content, should be It is regarded as the scope where the present invention can be implemented.
第1圖係為本發明之電子封裝件1之剖視示意圖。如第1圖所示,所述之電子封裝件1係包括:一承載件10、設於該承載件10上之第一封裝模組1a、以及疊設於該第一封裝模組1a上之第二封裝模組1b,藉由複數導電元件13相互堆疊之該第一封裝模組1a與該第二封裝模組1b,且藉由一封裝層16包覆該第一封裝模組1a與該第二封裝模組1b。
FIG. 1 is a schematic cross-sectional view of the electronic package 1 of the present invention. As shown in Fig. 1, the electronic package 1 includes: a
所述之第一封裝模組1a係包含至少一第一電子元件11,且該第一電子元件11之下表面係定義出第一佈設區域A,以佈設包覆結構1c,其中,該包覆結構1c係包含第一包覆部14及/或第二包覆部15,且該第二包覆部15的材質不同於該第一包覆部14之材質。
The
所述之第二封裝模組1b係包含相堆疊之複數第二電子元件12,且該第二電子元件12之下表面係定義出第二佈設區域A’,以佈設該第一包覆部14及/或該第二包覆部15,其中,藉由複數導電元件13相互堆疊第一電子元件11與第二電子元件12,以令該包覆結構1c包覆該些導電元件13。
The
所述之承載件10係例如為具有核心層與線路結構之封裝基板或無核心層(coreless)之線路結構,其包含至少一絕緣層及至少一結合該絕緣層之線路層,如至少一扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL)。應可理解地,該承載件10亦可為其它承載晶片之板材,如導線架(lead frame)、晶圓(wafer)、或其它具有金屬佈線(routing)之載板等,並不限於上述。
The
於本實施例中,該承載件10之製程方式繁多,例如,可採用晶圓製程製作銅材線路層,而以化學氣相沉積(Chemical vapor deposition,簡稱CVD)形成氮化矽或氧化矽以作為絕緣層;或者,可採用一般非晶圓製程方式形成銅材線路層,即採用成本較低之高分子介電材作為絕緣層,如聚醯亞胺(Polyimide,簡稱PI)、聚對二唑苯(Polybenzoxazole,簡稱PBO)、預浸材(Prepreg,簡稱PP)、封裝膠體(molding compound)、感光型介電層或其它材質等以塗佈方式形成之。
In this embodiment, the
於本實施例中,該第一電子元件11數量有兩個,所述之第一電子元件11係相互堆疊並以其中一者接置於該承載件10上,且複數第二電子元件12係相互堆疊並以其中一者堆疊於該第一電子元件11上。
In this embodiment, the number of the first
於本實施例中,該第一電子元件11係為主動元件、被動元件或其組合者,其中,該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該第一電子元件11係為半導體晶片,其上表面係作為堆疊側11b,而下表面係作為覆晶側11a,以令該些第一電子元件11以其覆晶側11a藉由複數如銲錫材料、金屬柱(pillar)或其它等之凸塊狀導電元件13覆晶結合於另一者之堆疊側11b上而相互電性連接,並使最下方之第一電子元件11藉由該些導電元件13覆晶接合於該承載件10上且電性連接該承載件10之線路層。
In this embodiment, the first
再者,該第二電子元件12係為主動元件、被動元件或其組合者,其中,該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該第二電子元件12係為半導體晶片,其上表面係作為堆疊側12b,而下表面係作為覆晶側12a,以令該些第二電子元件12以其覆晶側12a藉由該些導電元件13覆晶結合於另一者之堆疊側12b上而相互電性
連接,並使最下方之第二電子元件12藉由該些導電元件13覆晶接合於該第一電子元件11之堆疊側11b上且電性連接該第一電子元件11。
Furthermore, the second
又,將各該第一電子元件11之全部下表面(如覆晶側11a)及各該第二電子元件12之全部下表面(如覆晶側12a)作為該些第一與第二佈設區域A,A’。例如,該些第一與第二佈設區域A,A’係為如正方形之矩形,但無特別限制。具體地,該第一或第二佈設區域A,A’可依需求定義出一第一區段A1及鄰接該第一區段A1之第二區段A2,如第1’圖所示之十字形第一區段A1、或如第1”圖所示之如長方形之矩形第一區段A1。
Furthermore, the entire lower surface of each of the first electronic components 11 (such as the
另外,該第一電子元件11與該承載件10之間係形成有第一填充空間S1,且各該第一電子元件11之間係形成有第二填充空間S2,並於各該第一電子元件11與該第二電子元件12之間形成有第三填充空間S3,而各該第二電子元件12之間係形成有第四填充空間S4。應可理解地,有關該第二填充空間S2之數量可依需求而定,如零層(如第4或4’圖所示之一個第一電子元件11之實施例)或多層,並無特別限制,且有關該第四填充空間S4之數量亦可依需求而定,如一層或多層,並無特別限制。
In addition, a first filling space S1 is formed between the first
所述之第一包覆部14係為呈流體狀態之底膠材,其CTE值約52至109。
The
於本實施例中,該第一包覆部14係局部佈設於該第一及第二佈設區域A,A’上。例如,該第一包覆部14僅佈設於該第一區段A1上,如第1’或1”圖所示。具體地,該第一包覆部14係局部佈設於該第一至第四填充空間S1,S2,S3,S4之各該佈設區域A上。
In this embodiment, the
再者,於另一實施例中,如第2、2’、2A及2A’圖所示之電子封裝件2,該第一包覆部24亦可全部佈設於該第一及第二佈設區域A,A’上。例如,該第一包覆部24可完全佈設於該第一至第四填充空間S1,S2,S3,S4之
至少其中一者(如第2圖所示之第一填充空間S1、如第2A圖所示之第二至第四填充空間S2,S3,S4、或如第2A’圖所示之第一及第三填充空間S1,S3)之佈設區域上。應可理解地,如第3A’圖所示,該第一包覆部14,24可同時局部佈設及完全佈設於不同之第一及/或第二佈設區域A,A’上。
Furthermore, in another embodiment, such as the
所述之第二包覆部15係為固態填充體,如非導電膜(non-conductive film,簡稱NCF),其CTE值約32至98,故該第一包覆部14之材質係不同於該第二包覆部15之材質,例如,該第一包覆部14之熱膨脹係數係不同於該第二包覆部15之熱膨脹係數。
The
於本實施例中,該第二包覆部15係局部佈設於該第一及第二佈設區域A,A’上。例如,該第二包覆部15僅佈設於該第二區段A2上,如第1’圖所示之角落處或如第1”圖所示之相對兩外側。具體地,該第二包覆部15係局部佈設於該第一至第四填充空間S1,S2,S3,S4之各該佈設區域上。應可理解地,第一包覆部14與第二包覆部15於第1’及1”圖所示之配置可互換佈設區段。
In this embodiment, the
再者,於另一實施例中,如第2、2’、2A及2A’圖所示,該第二包覆部25亦可全部佈設於該第一及/或第二佈設區域A,A’上。例如,該第二包覆部25可完全佈設於該第一至第三填充空間S1,S2,S3,S4之至少其中一者(如第2圖所示之第二至第三填充空間S2,S3,S4、如第2A圖所示之第一填充空間S1、或如第2A’圖所示之第二及第三填充空間S2,S4)之佈設區域上。應可理解地,如第3或3A圖所示之電子封裝件3,該第二包覆部15,25可同時局部佈設及完全佈設於不同之第一及/或第二佈設區域A,A’上。
Furthermore, in another embodiment, as shown in Figures 2, 2', 2A, and 2A', the
因此,該些佈設區域之佈設型態可相同(如第1或1A圖所示)或不相同(如第1A’、2、2’、2A、2A’、3、3A或3A’圖所示)。應可理解地,有關第一至第四填充空間S1,S2,S3,S4之填充方式繁多,可依需求配置 該第一及/或第二佈設區域A,A’之佈設型態,如基於該第一至第四填充空間S1,S2,S3,S4(如縱向)或基於該第一區段A1與第二區段A2(如橫向),呈現對稱(如第3及3A’圖所示)或非對稱(如第3A圖所示)、交錯(如第1A’或2A’圖所示)或非交錯(如第3圖所示)、規律(如第1或1A圖所示)或非規律(如第2或2A圖所示)等多種排列組合方式,並不限於上述第1至3A’圖之態樣。 Therefore, the layout patterns of these layout areas can be the same (as shown in Figure 1 or 1A) or different (as shown in Figure 1A', 2, 2', 2A, 2A', 3, 3A, or 3A' ). It should be understood that there are many filling methods for the first to fourth filling spaces S1, S2, S3, and S4, which can be configured according to requirements The layout type of the first and/or second layout areas A, A', such as based on the first to fourth filling spaces S1, S2, S3, S4 (such as longitudinal) or based on the first section A1 and the first section Two sections A2 (such as horizontal), symmetrical (as shown in Figures 3 and 3A') or asymmetrical (as shown in Figure 3A), staggered (as shown in Figure 1A' or 2A') or non-staggered (As shown in Figure 3), regular (as shown in Figure 1 or 1A) or irregular (as shown in Figure 2 or 2A) and other permutations and combinations are not limited to the above-mentioned Figures 1 to 3A' State.
又,該電子封裝件1係依據其整體應力分佈而定義出一應力平衡線L,以利於調整該些第一及第二佈設區域A,A’之佈設型態。例如,該第一至第四填充空間S1,S2,S3,S4的包覆結構1c係互補配合,以適當控制該電子封裝件1之翹曲(warpage)程度,故該應力平衡線L係將該電子封裝件1定義出相鄰接之第一封裝模組1a(如第1圖所示之下半部)與第二封裝模組1b(如第1圖所示之上半部),以令該第一封裝模組1a的應變(如第1圖所示之上凸弧線之翹曲方向W1)與第二封裝模組1b的應變(如第1圖所示之下凹弧線之翹曲方向W2)大致上呈互補(如翹曲方向W1,W2互為反向),且兩者之應力幾近相互消弭。具體地,如第1至4圖所示,該應力平衡線L位於最上側之第一電子元件11處(或最下側之第二電子元件12處),以令該第一封裝模組1a包含至少一第一電子元件11,而該第二封裝模組1b包含複數第二電子元件12。應可理解地,當第一封裝模組1a配置有第一包覆部14時,該第二封裝模組1b必配置有第二包覆部15;當第一封裝模組1a配置有第二包覆部15時,該第二封裝模組1b必配置有第一包覆部14。因此,本發明藉由不同材質之第一與第二包覆部14,15依據應力分佈情況配置於該第一及第二封裝模組1a,1b上。
In addition, the electronic package 1 defines a stress balance line L according to its overall stress distribution to facilitate adjustment of the layout patterns of the first and second layout areas A, A'. For example, the
另外,若單一該佈設區域需佈設該第一與第二包覆部14,15時(如第1’及1”圖所示),其製程可先將固態第二包覆部15貼附於該第一
或第二電子元件11,12之表面上,以令該第二包覆部15形成一通道(即第一區段A1),待該第一電子元件11或第二電子元件12進行堆疊步驟後,將流體狀之第一包覆部14以點膠方式填入該通道(即第一區段A1)之四個埠口之其中一者(如第1’圖所示之填入方向F),使該第一包覆部14填入該第一區段A1所對應之填充空間。具體地,第1’圖所示之多軸向通道係有利於該第一包覆部14擴散溢流而填滿該第一區段A1所對應之填充空間(但其製作較為繁雜),而第1”圖所示之單軸向通道係有利於製作(但其較不易填滿填充空間)。
In addition, if the first and
所述之封裝層16係為絕緣材,如聚醯亞胺(PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound),其可用壓合(lamination)、塗佈(coating)或模壓(molding)之方式形成之。
The
綜上所述,本發明之電子封裝件1,2,3,4中,主要藉由該包覆結構1c包含兩種不同材質之包覆部(第一與第二包覆部14,15),以產生不同方向的應變,故將該包覆結構1c應用於多層填充空間(該第一至第四填充空間S1,S2,S3,S4)之電子封裝件1,2,3,4時,可藉由該第一與第二包覆部14,15之佈設型態調整該電子封裝件1,2,3,4之應力分佈,使該電子封裝件1,2,3,4之翹曲程度能獲得最佳的調控,即該電子封裝件1,2,3,4之形變最小化。例如,藉由該第一包覆部14之熱膨脹係數不同於該第二包覆部15之熱膨脹係數,使第一至第四填充空間S1,S2,S3,S4之填充方式可依需求配置該第一及第二佈設區域A,A’之佈設型態呈現多種排列組合方式,使該電子封裝件1,2,3,4之應力分佈能呈現平衡狀態。
In summary, in the
再者,藉由固態NCF(第二包覆部15)具有應力均勻擴散之特性,以利於抑制流體底膠材(第一包覆部14)的應力不均勻擴散,因而當兩者相互搭配時,可相互削減應力,故相較於習知採用流體底膠材包覆全部導電凸塊之技術,本發明之包覆結構1c能有效避免各層(該第一至第四填充空間S1,S2,S3,S4)應力累加之效應,即來自於該應力平衡線L之相對兩側之應力幾乎相互消弭。
Furthermore, the solid NCF (the second coating part 15) has the characteristic of uniform stress spreading, which is beneficial to suppress the uneven spread of the stress of the fluid base rubber material (the first coating part 14). Therefore, when the two are matched with each other , The stress can be reduced each other, so compared to the conventional technology that uses a fluid primer to cover all conductive bumps, the
又,如第2及2’圖所示,藉由該第一包覆部24之熱膨脹係數大於該第二包覆部25之熱膨脹係數,且固態NCF(第二包覆部25)具有應力均勻擴散之特性,因而可將第一包覆部24配置於該第一及/或第二填充空間S1,S2(即對應第一封裝模組1a的第一佈設區域A),故於製作上,可先進行該電子封裝件1,2,3,4上部的第二包覆部25之製程,再進行下部的該第一包覆部24之製程,此時,該第二包覆部25的應力分佈與翹曲程度已定型,因而較不會受到該第一包覆部24的高溫之熱製程影響。因此,當該第一包覆部24進行最終步驟填充時,可有效及良好地控制該電子封裝件2之整體應力分佈。具體地,當填入該第一包覆部24而完成固化後,該第一包覆部24於冷卻之過程中會收縮,使應變方向反向回拉,而將翹曲程度變小,以達到預期的翹曲程度之誤差範圍。
In addition, as shown in Figures 2 and 2', the thermal expansion coefficient of the
另外,若單一佈設區域上需佈設第一與第二包覆部14,15時,於製作上可藉由該第二包覆部15形成一流體用之通道,以於後續該第一包覆部14之點膠製程中,只需點膠一次即可沿該通道填滿該第一或第二佈設區域A,A’所對應之剩餘填充空間,因而能加速整體製作時程。
In addition, if the first and
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone familiar with this technique can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.
1:電子封裝件 1: Electronic package
1a:第一封裝模組 1a: The first package module
1b:第二封裝模組 1b: The second package module
1c:包覆結構 1c: cladding structure
10:承載件 10: Carrier
11:第一電子元件 11: The first electronic component
11a:覆晶側 11a: Flip chip side
11b:堆疊側 11b: Stack side
12:第二電子元件 12: The second electronic component
12a:覆晶側 12a: Flip chip side
12b:堆疊側 12b: Stack side
13:導電元件 13: conductive element
14:第一包覆部 14: The first covering part
15:第二包覆部 15: The second covering part
16:封裝層 16: Encapsulation layer
A:第一佈設區域 A: The first deployment area
A’:第二佈設區域 A’: The second deployment area
A1:第一區段 A1: The first section
A2:第二區段 A2: Second section
L:應力平衡線 L: Stress balance line
S1:第一填充空間 S1: The first filling space
S2:第二填充空間 S2: second filling space
S3,S4:第三填充空間 S3, S4: third filling space
W1,W2:翹曲方向 W1, W2: Warpage direction
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| TW201519404A (en) * | 2013-11-14 | 2015-05-16 | 台灣積體電路製造股份有限公司 | Three-dimensional integrated circuit structure and manufacturing method thereof |
| US10510684B2 (en) * | 2013-11-14 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuit (3DIC) with support structures |
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