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TWI731844B - 積層體 - Google Patents

積層體 Download PDF

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Publication number
TWI731844B
TWI731844B TW104137226A TW104137226A TWI731844B TW I731844 B TWI731844 B TW I731844B TW 104137226 A TW104137226 A TW 104137226A TW 104137226 A TW104137226 A TW 104137226A TW I731844 B TWI731844 B TW I731844B
Authority
TW
Taiwan
Prior art keywords
layer
metal
metal oxide
laminate
film
Prior art date
Application number
TW104137226A
Other languages
English (en)
Chinese (zh)
Other versions
TW201634258A (zh
Inventor
笘井重和
川嶋絵美
早坂紘美
上岡義弘
柴田雅敏
矢野公規
井上一吉
関谷隆司
霍間勇輝
竹嶋基浩
Original Assignee
日本商出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本商出光興產股份有限公司 filed Critical 日本商出光興產股份有限公司
Publication of TW201634258A publication Critical patent/TW201634258A/zh
Application granted granted Critical
Publication of TWI731844B publication Critical patent/TWI731844B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10W72/884—
    • H10W74/00—
    • H10W90/753—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Laminated Bodies (AREA)
TW104137226A 2014-11-11 2015-11-11 積層體 TWI731844B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-229285 2014-11-11
JP2014229285 2014-11-11

Publications (2)

Publication Number Publication Date
TW201634258A TW201634258A (zh) 2016-10-01
TWI731844B true TWI731844B (zh) 2021-07-01

Family

ID=55954030

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104137226A TWI731844B (zh) 2014-11-11 2015-11-11 積層體

Country Status (3)

Country Link
JP (1) JP6803232B2 (ja)
TW (1) TWI731844B (ja)
WO (1) WO2016075927A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018020849A1 (ja) 2016-07-26 2018-02-01 三菱電機株式会社 半導体装置および半導体装置の製造方法
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
DE112017007060T5 (de) * 2017-02-14 2019-10-24 Mitsubishi Electric Corporation Leistungshalbleitereinheit
JP6558385B2 (ja) 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法
US11670688B2 (en) * 2017-11-15 2023-06-06 Flosfia Inc. Semiconductor apparatus
EP3712959A4 (en) * 2017-11-15 2021-07-28 Flosfia Inc. SEMICONDUCTOR COMPONENT
JP7328234B2 (ja) * 2018-02-12 2023-08-16 クロミス，インコーポレイテッド 窒化ガリウム材料中の拡散によりドープ領域を形成するための方法およびシステム
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード
JP7375419B2 (ja) 2019-09-26 2023-11-08 Tdk株式会社 磁気センサ
CN115244714A (zh) * 2020-03-03 2022-10-25 罗姆股份有限公司 半导体器件和包含它的半导体封装以及半导体器件的制造方法
JP2022086774A (ja) * 2020-11-30 2022-06-09 有限会社Mtec 半導体素子の製造方法及び縦型ｍｏｓｆｅｔ素子
JP2022155345A (ja) * 2021-03-30 2022-10-13 有限会社Mtec パワー半導体及びその製造方法
JP2024134358A (ja) * 2023-03-20 2024-10-03 キオクシア株式会社 半導体装置の製造方法
WO2025063022A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス
WO2025063023A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201027750A (en) * 2008-09-01 2010-07-16 Semiconductor Energy Lab Method for manufacturing semiconductor device
WO2013122084A1 (ja) * 2012-02-15 2013-08-22 シャープ株式会社 酸化物半導体及びこれを含む半導体接合素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143418A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 薄膜形成装置
JP4902054B2 (ja) * 2001-04-10 2012-03-21 キヤノンアネルバ株式会社 スパッタリング装置
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
EP1681712A1 (en) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
JP4817673B2 (ja) * 2005-02-25 2011-11-16 三洋電機株式会社 窒化物系半導体素子の作製方法
JP2009231610A (ja) * 2008-03-24 2009-10-08 Pioneer Electronic Corp 有機太陽電池及び有機太陽電池の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201027750A (en) * 2008-09-01 2010-07-16 Semiconductor Energy Lab Method for manufacturing semiconductor device
WO2013122084A1 (ja) * 2012-02-15 2013-08-22 シャープ株式会社 酸化物半導体及びこれを含む半導体接合素子

Also Published As

Publication number Publication date
WO2016075927A1 (ja) 2016-05-19
JP6803232B2 (ja) 2020-12-23
TW201634258A (zh) 2016-10-01
JPWO2016075927A1 (ja) 2017-08-24

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