TWI731499B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus of the present invention is provided with: an inner tank (341); an outer tank (343) which is provided on the outer periphery of the inner tank (341); a first pipe (50) which connects the inner tank (341) and the outer tank (341) Tank (343); heater (52), which heats the phosphoric acid aqueous solution passing through the first pipe (50); on-off valve (513), which is provided in the first pipe (50) by the heater (52) and Between the inner tank (341); the second piping (60), which connects the piping part and the outer tank (343), the piping part is located between the heater (52) and the inner tank (341) in the first piping (50) Between; and on-off valve (61), which is provided in the second pipe (60).

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method. In particular, it relates to a technique of immersing a substrate in a processing liquid stored in a tank for processing. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, and organic EL (Electroluminescence, electroluminescence) display devices such as FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, and magnetic Substrates for optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, printed circuit boards, etc.

In the manufacturing steps of semiconductor devices, there is a case of performing so-called wet etching. The wet etching involves immersing a semiconductor wafer in an aqueous phosphoric acid solution stored in a processing tank to perform a silicon nitride film formed on the surface of the substrate. Etching. A substrate processing apparatus that performs such wet etching is described in Patent Document 1, for example.

The substrate processing apparatus of Patent Document 1 includes an inner tank for storing the phosphoric acid aqueous solution into which the substrate is immersed, an outer tank for recovering the phosphoric acid aqueous solution overflowing from the upper portion of the inner tank, and a circulation pipe connecting the outer tank and the inner tank. The circulation piping is equipped with a circulation pump, heater and filter. The circulation piping heats and filters the phosphoric acid aqueous solution drawn from the outer tank, and returns it to the inner tank. By setting up a circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank into which the substrate is immersed is maintained at the desired temperature, and the effect of etching The precipitated foreign matter is filtered.

[Prior Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2013-021066

However, in the case of the conventional technology, there is a possibility that the phosphoric acid aqueous solution returns to the inner tank, and the flow of the phosphoric acid aqueous solution in the inner tank may be uneven. In this way, when uneven flow occurs in the inner tank, in the phosphoric acid aqueous solution, there is a possibility that the concentration of phosphoric acid or the concentration of silicon eluted from the substrate may be uneven. Therefore, the etching amount of the substrate may be uneven in the surface. Both are in danger.

Here, the object of the present invention is to provide a technique for reducing the unevenness of the substrate processing surface in the processing tank.

In order to solve the above-mentioned problems, the first aspect is a substrate processing apparatus for processing substrates, which is provided with: a bottomed cylindrical inner tank having a first opening at the upper part; and a bottomed cylindrical outer tank provided in the above The outer periphery of the inner tank has a second opening at the upper part; a first pipe connecting the inside of the inner tank and the inside of the outer tank; a pump, which is provided in the first pipe, and faces from the outer tank to the The inner tank transports the processing liquid; the heater is provided in the first piping and heats the processing liquid passing through the first piping; the second piping connects the piping part and the outer tank, and the piping part is located in the first Between the heater in the piping and the inner tank; and a second piping valve, which is provided in the second piping and changes the flow rate of the processing liquid passing through the second piping.

In the second aspect, in the substrate processing apparatus of the first aspect, one end of the first pipe is connected to the bottom of the inner tank.

The third aspect is the substrate processing apparatus of the first aspect or the second aspect, and further includes: a first piping valve provided between the heater in the first piping and the inner tank , Changing the flow rate of the processing liquid passing through the first piping; the first piping valve is provided between the portion of the first piping that connects the second piping and the inner tank.

The fourth aspect is the substrate processing apparatus of the third aspect, and further includes a control unit connected to the first piping valve and the second piping valve to control the first piping valve and the Valve for the second piping.

The fifth aspect is that in the substrate processing apparatus of the fourth aspect, the control unit executes a first loop control process and a second loop control process. The first loop control process opens the first piping valve and closes the second The piping valve opens the first piping valve and the second piping valve in this second cycle control process.

The sixth aspect is in the substrate processing apparatus of any one of the third aspect to the fifth aspect, the first piping includes a bypass piping that is branched from the branch portion and connected to the inner tank The branch is located between the heater in the first piping and the first piping valve, and is further provided with: a bypass piping valve, which is provided in the bypass piping and is changed to pass through the bypass piping The flow rate of the processing liquid; the second pipe is connected between the branch portion in the bypass pipe and the valve for the bypass pipe.

The seventh aspect is the substrate processing apparatus of any one of the first aspect to the sixth aspect, wherein the second pipe is connected to the inside of the outer tank through the second opening.

The eighth aspect is a substrate processing method for processing a substrate by a substrate processing apparatus in any one of the first aspect to the seventh aspect, and includes the following steps: a) immersing the substrate in the above-mentioned storage in the above-mentioned inner tank Step of processing liquid; b) In the above step a), the processing liquid passing through the first pipe is returned to the inner tank, and the processing liquid passing through the first pipe is returned to the above through the second pipe The step of the outer tank; and c) in the step b), the step of heating the treatment liquid passing through the first pipe.

According to the substrate processing apparatus of the first aspect, it is possible to form a circulating flow in which the processing liquid overflowed from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. In addition, by opening the second piping valve, the processing liquid can be moved from the first piping to the second piping and returned to the outer tank. Thereby, the amount of processing liquid returned to the inner tank can be reduced, and therefore the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane unevenness during substrate processing can be reduced.

According to the substrate processing apparatus of the second aspect, the processing liquid can be returned to the bottom of the inner tank. Thereby, the flow of the treatment liquid in the inner tank due to the circulation of the treatment liquid can be reduced.

According to the substrate processing apparatus of the third aspect, the flow of the processing liquid from the first pipe to the inner tank and the flow of the processing liquid from the first pipe to the second pipe can be controlled by the first pipe valve.

According to the substrate processing apparatus of the fourth aspect, the operations of the first piping valve and the second piping valve can be controlled by the control unit.

According to the substrate processing apparatus of the fifth aspect, the processing liquid can be moved from the outer tank to the inner tank through the first piping by the control unit executing the first cycle control process. In addition, the control unit executes the second loop control process, so that the processing liquid can pass through the first The piping moves from the outer tank to the inner tank, and the processing liquid can be moved from the outer tank to the outer tank through the first pipe and the second pipe extending from the first pipe. Therefore, the amount of processing liquid that moves from the outer tank to the inner tank can be reduced.

According to the substrate processing apparatus of the sixth aspect, by closing the first piping valve, and opening the second piping valve and the bypass piping valve, a part of the processing liquid returning to the inner tank can be moved toward the second piping , And lead to the outer tank. Thereby, the amount of treatment liquid flowing into the inner tank can be reduced.

According to the substrate processing apparatus of the seventh aspect, the processing liquid can be returned from the upper side of the outer tank by the second pipe.

According to the substrate processing method of the eighth aspect, it is possible to form a circulating flow in which the processing liquid overflowed from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. In addition, by opening the second piping valve, the processing liquid can be moved from the first piping to the second piping and returned to the outer tank. Thereby, the amount of processing liquid returned to the inner tank can be reduced, and therefore the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane unevenness during substrate processing can be reduced.

1: Etching processing device

2: Carrier moving in and out department

3: Batch formation department

4: Batch Placement Department

5: Batch handling department

6: Batch Processing Department

7: Control Department

9: Carrier

10: Carrier platform

11: Carrier transport mechanism

12, 13: Carrier inventory area

14: Carrier platform

15: Substrate transport mechanism

16: Batch table

17: Load-in side batch stage

18: Bulk placement table on the move-out side

19: Bulk transfer mechanism

20: Rail

21: Moving body

22: substrate holder

23: Drying device

24: Substrate holder cleaning processing device

25: Washing treatment device

27: processing tank

28: Substrate lifting mechanism

29: processing tank

30, 31, 34, 35: processing tank

32, 33, 36, 37: substrate lifting mechanism

39: Liquid Handling Department

40: Phosphoric acid aqueous solution supply part

41: Pure water supply department

42: Silicon Supply Department

43: Phosphoric acid aqueous solution supply part

50: The first piping

51: Pump

52: heater

53: filter

55: Bypass piping

57, 61, 511, 513: On-off valve

58: Flow control valve

59: Flow Detector

60: The second piping

90: Disposal of piping

91, 95: waste valve

93: Cooling tank

100: Substrate liquid processing device

341: Inner Slot

341B: bottom

341P: first opening

343: Outer Slot

343P: 2nd opening

401: supply piping

403: Flow Detector

405: Flow control valve

407: On-off valve

411: Supply Piping

413: Flow Detector

415: Flow Control Valve

417: On-off valve

421: Supply Piping

423: Flow Detector

425: Flow control valve

427: On-off valve

501: Concentration detector

531: branch

533: Connection

601: Connecting part

901: Concentration Detector

Pos1: upper position

Pos2: down position

S11: Moving in steps

S12: impregnation step

S13: Moving out steps

T1, T3: during the normal cycle

T2: During the bypass cycle

V: Total

V1, V2: flow

W: substrate

FIG. 1 is a diagram showing a substrate liquid processing apparatus 100 according to the embodiment.

FIG. 2 is a diagram schematically showing the structure of the etching processing apparatus 1.

FIG. 3 is a timing chart for explaining the operation status of each element during the etching process in the etching processing apparatus 1.

Hereinafter, the embodiments of the present invention will be described with reference to the formulas in the drawings. Furthermore, the constituent elements described in this embodiment are only examples, and the main components are It is not intended to limit the scope of the present invention to only these constituent elements. In the drawings, for ease of understanding, there are cases where the size and quantity of each part are exaggerated or simplified according to needs.

In this case, the expression of relative or absolute positional relationship (for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc., unless specifically emphasized , Is not only used to rigorously express the positional relationship, it also means that the angle or distance is relatively displaced within the tolerance or within the range where the same degree of function can be obtained. Represents the performance of equal state (such as "identical", "equal", "homogeneous", etc.), unless specially adjusted, it is not only used to rigorously express the state of equality in quantitative terms, it also means that there is a tolerance or the same degree of function The state of difference. Representation of shapes (such as "quadrigonal" or "cylindrical", etc.), unless specifically emphasized, is not only used to rigorously express these geometrical shapes, but also within the range where the same degree of efficacy can be obtained. It means a shape having unevenness, chamfering, etc. The expression of "has," "has," "has," "contains," or "has" a constituent element is not an exclusive expression that excludes the existence of other constituent elements. The so-called "~above", unless specifically emphasized, in addition to the case where two components are connected, it also includes the case where two components are separated.

<Implementation form>

FIG. 1 is a diagram showing a substrate liquid processing apparatus 100 (substrate processing apparatus) according to the embodiment. In FIG. 1, in order to explain the positional relationship of each element, an XYZ orthogonal coordinate system is defined. The X axis and Y axis are parallel to the horizontal plane, and the Z axis is parallel to the vertical direction. In addition, in FIG. 1, the direction to which the tip of the arrow faces is referred to as the + (positive) direction, and the opposite direction is referred to as the-(negative) direction.

The substrate liquid processing apparatus 100 includes a carrier carrying-in/unloading unit 2, a batch forming unit 3, a batch placing unit 4, a batch conveying unit 5, a batch processing unit 6, and a control unit 7. The carrier carry-in and carry-out section 2 carries in and out the carrier 9, which carries a plurality of (for example, 25) silicon wafers, namely the substrate W, in a horizontal posture (the two main surfaces of the substrate W are in a posture parallel to the horizontal plane). Store up and down (in the Z-axis direction) side by side.

A carrier platform 10, a carrier conveying mechanism 11, carrier storage areas 12 and 13, and a carrier placing table 14 are provided in the carrier carrying-in and carrying-out part 2. A plurality of carriers 9 are placed on the carrier platform 10 along the Y-axis direction. The carrier conveying mechanism 11 conveys the carrier 9. The carrier storage areas 12 and 13 temporarily store one carrier 9. The carrier 9 is placed on the carrier placing table 14. The carrier storage area 12 temporarily stores the substrate W as a product before processing by the batch processing unit 6. The carrier storage area 13 is for temporarily storing the substrate W as a product after being processed by the batch processing unit 6.

The carrier carrying-in and carrying-out unit 2 uses the carrier carrying mechanism 11 to carry the carrier 9 carried into the carrier platform 10 from the outside to the carrier storage area 12 or the carrier mounting table 14. The carrier carry-in and carry-out unit 2 uses the carrier transport mechanism 11 to transport the carrier 9 placed on the carrier mounting table 14 to the carrier storage area 13 or the carrier platform 10. The carrier 9 conveyed to the carrier platform 10 is carried out to the outside.

The batch forming unit 3 forms a batch composed of a number of substrates W (for example, 50) that are simultaneously processed by combining a plurality of substrates W accommodated in one or a plurality of carriers 9. The batch forming part 3 may make the surfaces on which the patterns are formed on the surfaces of the respective substrates W face each other when forming a batch. In addition, the batch forming part 3 may make all the pattern forming surfaces of each substrate W face one direction when forming a batch.

The batch forming part 3 is provided with a substrate conveying mechanism 15 that conveys a plurality of substrates W at the same time. The substrate transfer mechanism 15 is provided with a substrate W during the transfer of the substrate W. A mechanism for changing the posture of the board W from a horizontal posture to a vertical posture (the two main surfaces of the board W are in a posture parallel to the vertical surface) and from the vertical posture to the horizontal posture.

The batch forming unit 3 uses the substrate transfer mechanism 15 to transfer the substrates W from the carrier 9 placed on the carrier mounting table 14 to the batch mounting unit 4, and mounts the substrates W formed into a batch on the batch mounting unit 4. The batch forming section 3 uses the substrate conveying mechanism 15 to convey the batch placed on the batch placing section 4 to the carrier 9 placed on the carrier placing table 14. The substrate transport mechanism 15 has a first substrate support portion for supporting the substrate W before processing (before being transported by the batch transport portion 5), and a second substrate support portion for supporting the substrate W after the processing (after being transported by the batch transport portion 5) Part, as a substrate support part for supporting a plurality of substrates W. By providing the first and second substrate support portions, it is possible to prevent particles and the like falling off the substrate W before processing from adhering to the substrate W after processing.

The batch placement unit 4 is provided with a batch placement stand 16 for temporarily placing the batch that the batch transport unit 5 transports between the batch formation unit 3 and the batch processing unit 6. In addition, the batch loading unit 4 is provided with a batch loading side batch loading table 17 before the loading process (before being transported by the batch transfer unit 5), and after the loading process (after being transported by the batch transfer unit 5) The batch loading table 18 on the unloading side of the batch. A plurality of substrates W for one batch are placed side by side in the Y-axis direction in a vertical posture on each of the loading tables 17 and 18.

In the batch placing section 4, the batch formed in the batch forming section 3 is placed on the carry-in-side batch placing table 17, and the batch is carried into the batch processing section 6 by the batch conveying section 5. In the batch placing section 4, the batch carried out from the batch processing section 6 by the batch transport section 5 is placed on the unloading-side batch placing table 18, and the batch is transported to the batch forming section 3.

The batch transfer unit 5 performs batch transfer between the batch placement unit 4 and the batch processing unit 6 or within the batch processing unit 6. The batch conveying unit 5 is provided with a batch conveying mechanism 19 that performs batch conveying. The batch conveying mechanism 19 includes a guide rail 20 arranged along the batch placement unit 4 and the batch processing unit 6, a moving body 21 that moves along the guide rail 20 while holding a plurality of substrates W, and a motor that moves the moving body 21. The movable body 21 is provided with a substrate holding body 22 that holds a plurality of substrates W side by side in a vertical posture in the front and rear. The movable body 21 has a mechanism including a motor that advances and retracts the substrate holding body 22 in the Y-axis direction, and the like.

The batch processing unit 6 performs processing such as etching, cleaning, and drying by treating a plurality of substrates W arranged in a vertical posture in the Y-axis direction as one batch. In the batch processing section 6, a drying processing device 23, a substrate holder cleaning processing device 24, a cleaning processing device 25, and a plurality of (in this example, two) etching processing devices are sequentially arranged in the +X direction. 1.

The drying processing apparatus 23 has a processing tank 27 and a substrate raising and lowering mechanism 28 provided in the processing tank 27 so as to be lifted and lowered. The processing gas for drying (IPA, isopropyl alcohol, etc.) is supplied to the processing tank 27. A batch of a plurality of substrates W is held in the substrate lifting mechanism 28 side by side in a vertical posture. The drying processing device 23 uses the substrate lifting mechanism 28 to receive the batch from the substrate holder 22 of the batch conveying mechanism 19, and uses the substrate lifting mechanism 28 to lift the batch, thereby utilizing the drying process gas supplied to the processing tank 27. The drying process of the substrate W. In addition, the drying processing device 23 transfers the batch receiving from the substrate lifting mechanism 28 to the substrate holder 22 of the batch conveying mechanism 19.

The substrate holder cleaning processing apparatus 24 has a processing tank 29 and a supply mechanism for supplying a processing liquid and dry gas for cleaning to the processing tank 29. Substrate retention The body cleaning processing device 24 performs cleaning processing of the substrate holding body 22 by supplying a cleaning treatment liquid to the substrate holder 22 of the batch conveying mechanism 19 and then supplying a dry gas.

The cleaning processing device 25 performs cleaning processing of the substrate W. The washing treatment device 25 has a treatment tank 30 for washing and a treatment tank 31 for washing. Each treatment tank 30 and 31 is provided with substrate lifting mechanisms 32 and 33 so as to be lifted and lowered. The washing treatment tank 30 stores a washing treatment liquid (SC-1 (aqueous ammonia peroxide solution), etc.). The processing tank 31 for rinsing stores a processing liquid (pure water, etc.) for rinsing.

Each etching processing apparatus 1 performs etching processing of the substrate W. The etching processing apparatus 1 has a processing tank 34 for etching and a processing tank 35 for flushing. The substrate raising and lowering mechanisms 36 and 37 are provided in the respective processing tanks 34 and 35. The processing tank 34 for etching can store a processing solution (aqueous phosphoric acid solution) for etching inside. The processing tank 35 for flushing can store a processing liquid (pure water, etc.) for flushing inside.

The cleaning processing device 25 and the etching processing device 1 have, for example, the same configuration. When the etching processing apparatus 1 is described, the substrate raising and lowering mechanism 36 holds a plurality of substrates W for one batch in a vertical posture aligned in front and rear. In the etching processing apparatus 1, the substrate lifting mechanism 36 receives the batch from the substrate holder 22 of the batch conveying mechanism 19. Next, the substrate raising and lowering mechanism 36 lowers the batch, thereby immersing the batch in the processing liquid for etching in the processing tank 34. In this way, the etching process of the substrate W is performed. After the etching process, the substrate raising and lowering mechanism 36 raises the batch and delivers the batch to the substrate holder 22. After that, the substrate elevating mechanism 37 receives the lot from the substrate holder 22. Next, the substrate raising and lowering mechanism 37 lowers the batch, thereby immersing the batch in the processing liquid for rinsing in the processing tank 35. In this way, the substrate W is rinsed. After the rinsing process, the substrate lifting mechanism 37 raises the batch, and the batch The amount is taken and delivered to the substrate holder 22.

The control unit 7 is connected to the various parts of the substrate liquid processing apparatus 100 (carrier in/out unit 2, batch formation unit 3, batch placement unit 4, batch transport unit 5, batch processing unit 6, etching processing device 1), and controls the And so on. The hardware configuration of the control unit 7 is, for example, the same as that of a general computer. That is, the control unit 7 includes a CPU (Central Processing Unit) (processor), ROM (Read-Only Memory), RAM (Random Access Memory) (memory) ), and fixed disk. The CPU contains arithmetic circuits that perform various arithmetic processing. ROM memory has basic programs. RAM is a volatile main memory device that stores various information. The fixed disk is an auxiliary memory device that stores programs or data executed by the CPU. The CPU, ROM, RAM, and fixed disk are connected by bus cables.

The control unit is connected with a display unit for displaying images, and an operation unit including a keyboard or a mouse. The display unit may also be constituted by a touch panel. In this case, the display unit also functions as an operation unit. The bus line of the control part can also be connected with a reading device and a communication part. The reading device reads information from a non-temporary recording medium readable by a computer such as an optical disk, a magnetic disk, and a magneto-optical disk. The communication unit can communicate information between the control unit 7 and other computers (servers, etc.). The program is provided to the control section 7 by reading the recording medium on which the program is recorded by the reading device. Furthermore, the program may also be provided to the control unit 7 via the communication unit.

FIG. 2 is a diagram schematically showing the structure of the etching processing apparatus 1. The etching processing apparatus 1 has the above-mentioned processing tank 34 which stores a phosphoric acid aqueous solution of a predetermined concentration as a processing liquid. The processing tank 34 has an inner tank 341 and an outer tank 343. The inner groove 341 is formed in a bottomed cylindrical shape having a first opening 341P formed at an upper edge. The outer groove 343 is provided on the outer circumference of the inner groove 341, and is formed to have an upper edge structure The second opening 343P has a bottomed cylindrical shape. In addition, the outer groove 343 is formed in a ring shape surrounding the entire outer periphery of the inner groove 341. When the inner tank 341 is filled with the phosphoric acid aqueous solution, the excess phosphoric acid aqueous solution overflows from the first opening 341P. Then, the overflowing phosphoric acid aqueous solution flows into the outer tank 343 through the second opening 343P.

One end of the first pipe 50 is connected to the inside of the outer tank 343. In this example, one end of the first pipe 50 extends downward from above the outer groove 343 through the second opening 343P, and extends inside the outer groove 343. That is, the opening at one end of the first pipe 50 is provided below the second opening 343P. The other end of the first pipe 50 is connected to the inside of the inner tank 341. In this example, the other end of the first pipe 50 is connected to the bottom 341B of the inner groove 341 (the bottom surface of the inner groove 341 in the depth direction). In the first pipe 50, a concentration detector 501, a pump 51, an on-off valve 511, a heater 52, a filter 53, and an on-off valve 513 are provided in this order from the upstream side (outer tank 343 side).

The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution passing through the first pipe 50. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution, for example, by measuring the absorbance of the phosphoric acid aqueous solution to light of a specific wavelength. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution discharged from the outer tank 343. The concentration detector 501 is connected to the control unit 7 and sends a detection signal corresponding to the detected phosphoric acid concentration to the control unit 7.

The pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 through the first pipe 50 and transfers the phosphoric acid aqueous solution to the inside of the inner tank 341. The heater 52 heats the phosphoric acid aqueous solution passing through the first pipe 50. The filter 53 filters the phosphoric acid aqueous solution passing through the first pipe 50. The phosphoric acid aqueous solution discharged from the outer tank 343 is moved toward the inner tank 341 by the driving of the pump 51. Then, the phosphoric acid aqueous solution overflowing from the inner tank 341 flows out to the outer tank 343 again. In this way, in the etching processing apparatus 1, a Circulating flow of phosphoric acid aqueous solution.

The opening and closing valves 511 and 513 are, for example, electric or electromagnetic valves, and they open and close the flow of the processing liquid in the first pipe 50. The so-called "on-off control of the flow" refers to the control of the flow of the processing liquid in the piping between two states: the flowable state and the non-flowable state. The opening and closing valves 511 and 513 are connected to the control unit 7, and the opening and closing operations are controlled by the control unit 7.

As shown in FIG. 2, the substrate raising and lowering mechanism 36 includes a holder (not shown) that holds a plurality of substrates W in a vertically standing posture and arranged at intervals in the horizontal direction. In addition, the substrate raising and lowering mechanism 36 includes a raising and lowering motor (not shown) that raises and lowers between the upper position Pos1 and the lower position Pos2 in a state in which each substrate W is held by the holder.

The first pipe 50 has a bypass pipe 55. In this example, one end of the bypass pipe 55 is connected to the branch portion 531 of the piping portion, and the branch portion 531 of the pipe portion is located between the filter 53 in the first pipe 50 and the on-off valve 513 (first piping valve) . In addition, the other end of the bypass pipe 55 is connected to the connecting portion 533 between the on-off valve 513 and the inner tank 341 in the first pipe 50. That is, the bypass pipe 55 is branched from the branch portion 531 between the heater 52 and the on-off valve 513 in the first pipe 50 and is connected to the inner tank 341. Furthermore, the other end of the bypass pipe 55 can also be directly connected to the inner tank 341 (for example, the bottom 341B).

In the bypass pipe 55 of the first pipe 50, an on-off valve 57, a flow control valve 58, and a flow detector 59 are provided in this order from the upstream side (the branch portion 531 side). The on-off valve 57 and the flow control valve 58 are connected to the control unit 7 and operate according to a control signal from the control unit 7. The on-off valve 57 is for on-off control of the flow of the phosphoric acid aqueous solution circulating in the bypass pipe 55, and the flow control valve 58 is opposite to the flow of the bypass pipe 55. Adjust the flow rate of the phosphoric acid aqueous solution. The term "adjusting the flow rate" refers to changing the flow rate at least in a state where the processing liquid is circulated. As the flow control valve 58, for example, an electric needle valve may be used. The flow rate detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The flow rate detector 59 is connected to the control unit 7 and sends a detection signal corresponding to the detected flow rate to the control unit 7. As the flow rate detector 59, for example, an ultrasonic flowmeter that uses ultrasonic waves to detect the flow rate in the pipe from the outer side of the pipe may be used.

The etching processing apparatus 1 includes a second pipe 60. The second pipe 60 constitutes a pipe path connecting the first pipe 50 and the outer tank 343. In this example, one end of the second pipe 60 is connected to a part of the first pipe 50, that is, halfway through the path of the bypass pipe 55. More specifically, one end of the second pipe 60 is connected to the pipe portion between the on-off valve 57 and the branch portion 531 in the bypass pipe 55 of the first pipe 50 via the connection portion 601. The other end of the second pipe 60 is connected to the inside of the outer tank 343. In this example, the other end of the second pipe 60 extends downward from above the outer groove 343 through the second opening 343P, and extends to the inside of the outer groove 343.

An on-off valve 61 is provided in the middle of the path of the second pipe 60. The on-off valve 61 is connected to the control unit 7 and controls the flow of the phosphoric acid aqueous solution in the second pipe 60 based on a control signal from the control unit 7.

In this example, the control unit 7 performs a first loop control process that opens the on-off valves 511 and 513 and closes the on-off valves 57 and 61. In this first circulation control process, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.

In addition, in this example, the control unit 7 performs a second loop control process in which the on-off valves 511, 57, and 61 are opened and the on-off valve 513 is closed. In this second circulation control process, part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 via the bypass pipe 55 of the first pipe 50, and the rest is returned to the outer tank via the second pipe 60 343. In more detail, the phosphoric acid treatment liquid discharged from the outer tank 343 via the first pipe 50 is guided to the bypass pipe 55 through the branch portion 531 because the on-off valve 513 is closed. A part of the phosphoric acid aqueous solution guided to the bypass pipe 55 flows into the second pipe 60 from the bypass pipe 55 via the connection part 601, and is guided to the outer tank 343. In addition, the remaining phosphoric acid aqueous solution is guided to the inner tank 341 via the bypass pipe 55 and the connection part 533.

In this way, in the first or second cycle control process performed by the control unit 7, the on-off valve 513 functions as a first piping valve that changes the flow rate of the processing liquid passing through the first piping 50. In addition, the on-off valve 61 functions as a second piping valve that changes the flow rate of the processing liquid passing through the second piping 60. Furthermore, the on-off valve 57 or the flow control valve 58 functions as a bypass piping valve that changes the flow rate of the processing liquid flowing through the bypass piping 55. Furthermore, the so-called "change of flow rate" includes the concept of adjusting the flow rate by means of a flow rate adjustment valve in addition to the case where the flow of liquid is controlled by opening and closing the valve.

The control unit 7 controls the flow control valve 58 based on the detection result of the flow detector 59 during the second cycle control process, thereby adjusting the flow rate of the phosphoric acid aqueous solution returning to the inner tank 341. That is, by making the opening of the flow control valve 58 larger, the flow rate of the phosphoric acid aqueous solution returning to the inner tank 341 can be increased, and by making the opening of the flow control valve 58 smaller, the amount of phosphoric acid returning to the inner tank 341 can be reduced. The flow rate of the aqueous solution.

Furthermore, the flow of the phosphoric acid aqueous solution in the bypass pipe 55 may be controlled on and off by the flow control valve 58. In this case, the on-off valve 57 may be omitted. In addition, the provision of the flow control valve 58 is not necessary. In the omission of the flow control valve 58 In this case, the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55 is not adjusted, and the on-off control of the flow of the phosphoric acid aqueous solution is performed by the on-off valve 57. Furthermore, it is not essential to provide the bypass pipe 55, and it may be omitted. When the bypass pipe 55 is omitted, one end of the second pipe 60 (connecting part 601) may be directly connected, for example, between the heater 52 in the first pipe 50 and the inner tank 341 (for example, the position of the branching part 531). ). In this case, when a circulating flow is formed in the first pipe 50, by opening the on-off valve 61, a part of the phosphoric acid aqueous solution in the first pipe 50 flows into the second pipe 60 and is sent to the outer tank 343. Thereby, the amount of the phosphoric acid aqueous solution that passes through the first pipe 50 and returns to the inner tank 341 can be reduced.

The etching processing apparatus 1 includes a phosphoric acid aqueous solution supply unit 40. The phosphoric acid aqueous solution supply unit 40 supplies an aqueous phosphoric acid solution of a predetermined concentration to the outer tank 343. In addition, the phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to a predetermined portion of the inner tank 341 or the first pipe 50. The phosphoric acid aqueous solution supply unit 40 includes a supply source including a tank for storing the phosphoric acid aqueous solution, and a supply pipe 401 connecting the supply source and the outer tank 343. In the supply pipe 401, a flow detector 403, a flow control valve 405, and an on-off valve 407 are provided in this order from the upstream side (supply source side). The flow rate detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The flow control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The on-off valve 417 controls the flow of the phosphoric acid aqueous solution in the supply pipe 401 on and off.

The flow rate detector 403, the flow rate control valve 405, and the on-off valve 407 are connected to the control unit 7. The control unit 7 controls the flow control valve 405 based on the signal indicating the flow sent from the flow detector 403. Thereby, the phosphoric acid aqueous solution supply part 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.

The substrate liquid processing apparatus 100 includes a pure water supply unit 41. Pure water The supply unit 41 supplies pure water to the outer tank 343. In addition, the pure water supply unit 41 may supply pure water to a predetermined portion of the inner tank 341 or the first pipe 50. For example, in order to replenish the water evaporated by heating the phosphoric acid aqueous solution, pure water is supplied. The pure water supply unit 41 includes a supply source for supplying pure water at a predetermined temperature, and a supply pipe 411 connecting the supply source and the outer tank 343. In the supply pipe 411, a flow detector 413, a flow control valve 415, and an on-off valve 417 are provided in this order from the upstream side (supply source side). The flow rate detector 413 detects the flow rate of pure water flowing through the supply pipe 411. The flow control valve 415 adjusts the flow rate of pure water flowing through the supply pipe 411. The on-off valve 417 controls the flow of pure water in the supply pipe 411 on and off.

The flow rate detector 413, the flow rate control valve 415, and the on-off valve 417 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 415 based on the signal indicating the flow rate sent from the flow rate detector 413. Thereby, the pure water supply unit 41 supplies pure water to the outer tank 343 at a controlled flow rate.

The etching processing apparatus 1 includes a silicon supply unit 42. The silicon supply part 42 supplies a silicon aqueous solution (for example, a hexafluorosilicic acid aqueous solution (H ₂ SiF ₆ +H ₂ O)) to the outer tank 343. Furthermore, the silicon supply part 42 may supply a silicon aqueous solution to a predetermined part of the inner tank 341 or the first pipe 50. The silicon supply unit 42 includes a supply source for supplying an aqueous silicon solution, and a supply pipe 421 connecting the supply source and the outer tank 343. In the supply pipe 421, a flow detector 423, a flow control valve 425, and an on-off valve 427 are provided in this order from the upstream side (supply side). The flow rate detector 423 detects the flow rate of the silicon aqueous solution flowing through the supply pipe 421. The flow control valve 425 adjusts the flow rate of the silicon aqueous solution flowing through the supply pipe 421. The on-off valve 427 controls the flow of the silicon aqueous solution in the supply pipe 421 on and off.

The flow detector 423, the flow control valve 425, and the on-off valve 427 are connected Connected to the control section 7. The control unit 7 controls the flow rate control valve 425 based on the signal indicating the flow rate sent from the flow rate detector 423. Thereby, the silicon supply part 42 supplies silicon to the outer tank 343 at a controlled flow rate.

A waste pipe 90 is connected to the pipe portion connecting the heater 52 and the filter 53 in the first pipe 50. The waste piping 90 is a piping path used when the phosphoric acid aqueous solution in the processing tank 34 is discarded to the outside of the substrate liquid processing apparatus 100. In the waste pipe 90, a concentration detector 901, a waste valve 91, a cooling tank 93, and a waste valve 95 are provided in this order from the upstream side (the first pipe 50 side).

The concentration detector 901 detects the concentration of silicon in the phosphoric acid aqueous solution passing through the waste pipe 90. The concentration detector 901 detects the silicon concentration by, for example, measuring the absorbance of light of a specific wavelength in an aqueous phosphoric acid solution. The concentration detector 901 is connected to the control unit 7 and sends a detection signal corresponding to the detected silicon concentration to the control unit 7.

The cooling tank 93 temporarily stores the higher-temperature phosphoric acid aqueous solution discharged from the processing tank 34 and cools it to a temperature that can be discarded to the outside. The waste valve 91 provided on the upstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution flows into the cooling tank 93 from the first pipe 50. In addition, the waste valve 95 provided on the downstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is discharged from the cooling tank 93. The discard valves 91 and 95 are connected to the control unit 7, and the control unit 7 performs opening and closing control.

The phosphoric acid aqueous solution that has passed through the first pipe 50 is sent to the waste pipe 90 at an appropriate time. Thereby, the concentration of silicon in the phosphoric acid aqueous solution is detected by the concentration detector 901. When the silicon concentration is higher than the predetermined one, by appropriately supplying pure water from the pure water supply part 41 or the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply part 40, the concentration of silicon in the phosphoric acid aqueous solution in the circulation system is reduced. .

<About the formation of the circulating flow of the phosphoric acid aqueous solution>

When the substrate W is processed in the processing tank 34, a circulating flow of the phosphoric acid aqueous solution in the processing tank 34 and the first pipe 50 is formed. In order to form this circulating flow, first, an aqueous phosphoric acid solution is stored in the treatment tank 34. Specifically, the phosphoric acid aqueous solution supply part 40 supplies the phosphoric acid aqueous solution to the outer tank 343 of the liquid processing part 39, and the pump 51 of the first pipe 50 transfers the phosphoric acid aqueous solution from the outer tank 343 to the inner tank 341. When the inside of the inner tank 341 is filled with the phosphoric acid aqueous solution, the phosphoric acid aqueous solution overflowing from the first opening 341P of the inner tank 341 starts to move to the outer tank 343. When one end of the first pipe 50 reaches the phosphoric acid aqueous solution stored in the outer tank 343, the phosphoric acid aqueous solution in the outer tank 343 passes through the first pipe 50 and starts to be discharged. In this way, in the circulation system of the treatment tank 34 and the first pipe 50, a circulation flow in which the phosphoric acid aqueous solution circulates is formed.

The heater 52 heats the phosphoric acid aqueous solution flowing through the first pipe 50 at an appropriate time point before or after the circulating flow is formed so that the phosphoric acid aqueous solution in the inner tank 341 becomes a predetermined temperature (for example, 80° C.). When the phosphoric acid aqueous solution is in a high temperature state, the water evaporates, so it is possible that the phosphoric acid concentration in the phosphoric acid aqueous solution may increase over time. When the concentration of phosphoric acid detected by the concentration detector 501 exceeds a predetermined management upper limit, the control unit 7 supplies pure water from the pure water supply unit 41. The supply of pure water for adjusting the concentration of phosphoric acid can be performed at any time when the substrate W is immersed in an aqueous phosphoric acid solution (that is, during liquid processing of the substrate W), or when the substrate W is not immersed in the processing liquid get on.

FIG. 3 is a timing chart for explaining the operation status of each element during the etching process in the etching processing apparatus 1. In FIG. 3, the horizontal axis represents time, and the substrate lifting mechanism 36, the on-off valve 513, the on-off valve 57, and the opening and closing are shown in order from the top in the vertical direction. Each action of valve 61. Furthermore, for the substrate elevating mechanism 36, the state change between "up" and "down" is shown (refer to FIG. 2). The "up" means that the substrate elevating mechanism 36 is located at the position Pos1 above the processing tank 34. In the state, the “down” indicates a state in which the substrate lifting mechanism 36 is located inside the processing tank 34, that is, in the lower position Pos2. The substrate elevating mechanism 36 moves to the lower position Pos2 while holding the batch (substrate W), and the batch is etched. In addition, the on-off valves 513, 57, and 61 show a state change between "open" and "closed". The "open" indicates the open state, and the "closed" indicates the closed state. In addition, the "amount returned to the inner tank" shown in FIG. 3 indicates the amount of the phosphoric acid aqueous solution that flows into the inner tank 341 through the first pipe 50 by the operation of the pump 51.

FIG. 3 shows a timing chart of one cycle of etching processing for one batch including a plurality of substrates W in the processing tank 34 of the etching processing apparatus 1. This etching process includes carrying-in step S11, dipping step S12, and carrying-out step S13.

The carrying-in step S11 includes a process in which the substrate elevating mechanism 36 located at the upper position Pos1 receives the batch from the batch conveying mechanism 19. The immersion step S12 includes a process in which the substrate raising and lowering mechanism 36 descends from the upper position Pos1 to the lower position Pos2, whereby the batch is immersed in the phosphoric acid aqueous solution stored in the inner tank 341. By performing this immersion step S12, the substrate W is etched. The unloading step S13 includes the process of raising the substrate lifting mechanism 36 from the lower position Pos2 to the upper position Pos1, whereby the batch is pulled up from the phosphoric acid aqueous solution stored in the inner tank 341, and the batch conveying mechanism 19 lifts and lowers the substrate from the upper position Pos1 The mechanism 36 receives batch processing. The batches delivered to the batch conveying mechanism 19 are processed in the processing tank 35 with the rinse liquid.

In addition, one cycle of the etching process in the processing tank 34 includes a normal cycle period T1, a bypass cycle period T2, and a normal cycle period T3 in this order. The normal cycle periods T1 and T3 are the periods during which the following cycle is performed by the operation of the pump 51, In this circulation system, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the first pipe 50. Hereinafter, the cycle performed during the normal cycle periods T1 and T3 may be referred to as the "normal cycle". The bypass cycle period T2 is a period during which a cycle is performed by the operation of the pump 51 in which a part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55, and the rest The part of is returned to the outer tank 343 through the second pipe 60. Hereinafter, there are cases where the cycle performed during the bypass cycle period T2 is referred to as a "bypass cycle".

In the normal cycle of the normal cycle periods T1 and T3, the control unit 7 performs the first cycle control process described above. That is, in the normal cycle periods T1 and T3, the on-off valves 511 and 513 of the first pipe 50 are opened, and the on-off valve 57 of the bypass pipe 55 of the first pipe 50 and the on-off valve 61 of the second pipe 60 are closed. status. In this normal cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 via the first pipe 50 is directly guided to the inner tank 341 through the first pipe 50. Therefore, in the normal cycle periods T1 and T3, all the phosphoric acid aqueous solution from the outer tank 343 is returned to the inner tank 341. That is, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.

On the other hand, in the bypass cycle of the bypass cycle period T2, the control unit 7 performs the second cycle control process described above. That is, the on-off valve 513 of the first pipe 50 is set to the closed state, and the on-off valve 57 of the bypass pipe 55 and the on-off valve 61 of the second pipe 60 are set to the open state. In the bypass cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 through the first pipe 50 is moved to the bypass pipe 55 side in the branch portion 531. Furthermore, in the connection part 601, a part of the phosphoric acid aqueous solution is guided to the outer tank 343 through the second pipe 60, and the remaining part is moved to the first pipe 50 through the connection part 533 through the bypass pipe 55, and then is guided. Lead to the inner groove 341. In the bypass cycle, the phosphoric acid aqueous solution heated by the heater 52 can also be returned to the inner tank 341. Therefore, it can be suppressed The temperature of the phosphoric acid aqueous solution in the inner tank 341 is reduced.

Here, the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is referred to as V. Therefore, the flow rate of the phosphoric acid aqueous solution toward the inner tank 341 during the normal circulation period T1 and the flow rate V1 at T3 is approximately equal to the total amount V, but in the bypass circulation period T2, the flow rate V2 is smaller than the flow rate V1. This is because it becomes possible to pass through the second pipe 60 during the bypass cycle period T2, so a part of the phosphoric acid aqueous solution is guided to the outer tank 343 through the second pipe 60. That is, the amount of phosphoric acid aqueous solution guided to the outer tank 343 is represented by V-V2.

In the bypass cycle period T2, the flow rate detector 59 detects the flow rate guided to the inner tank 341 through the bypass pipe 55. The flow rate detected by the flow rate detector 59 is equal to the flow rate of the inward tank 341. Here, in the bypass cycle period T2, the control unit 7 controls the flow control valve 58 so that the detection signal of the flow detector 59 approaches the predetermined flow rate V2. Thereby, the flow rate of the inward tank 341 in the bypass cycle period T2 can be appropriately adjusted. Furthermore, the control unit 7 may accept the change of the size of V2 via the operation unit.

In the example of FIG. 3, the carrying-in step S11 before the immersion step S12 is included in the normal cycle period T1. Therefore, the normal loop is performed in the carry-in step S11. In this case, before the start of the immersion step S12, the entire amount of the phosphoric acid aqueous solution heated by the heater 52 is supplied to the inside of the inner tank 341, so that the temperature of the phosphoric acid aqueous solution in the inner tank 341 can quickly reach the desired level temperature. In addition, after the previous batch of etching treatment, in order to adjust the concentration of phosphoric acid or silicon, the liquid is supplied from each supply unit 41 to 43 to the processing tank 34, by carrying out the normal cycle in the carrying-in step S11, the immersion step can be carried out. Before S12, the phosphoric acid concentration and silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 are adjusted quickly.

In the example of FIG. 3, a part of the period during which the immersion step S12 is performed is referred to as the bypass cycle period T2. Specifically, in the middle of the immersion step S12, the bypass cycle is temporarily performed. By performing the bypass cycle, the flow of the phosphoric acid aqueous solution in the inner tank 341 can be more reduced compared to the normal cycle. That is, the unevenness of the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, and therefore the in-plane unevenness of the etching amount in the substrate W can be reduced.

In the example of FIG. 3, the initial stage of the immersion step S12 is included in the normal cycle period T1. That is, in the immersion step S12, the normal cycle is initially performed for a certain period of time. Since the batch is immersed in the phosphoric acid treatment solution in the inner tank 341 immediately after the start of the immersion step S12, the temperature of the phosphoric acid aqueous solution is relatively easy to decrease. Here, the normal circulation is performed immediately after the start of the immersion step S12, whereby all the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Thereby, the temperature drop of the phosphoric acid aqueous solution in the inner tank 341 can be reduced.

In the example of FIG. 3, the period after the immersion step S12 is included in the normal cycle period T3. That is, in the late stage of the immersion step S12, the bypass cycle is transferred to the normal cycle, and the carry-out step S13 is performed. In general, in the immersion step S12, silicon is eluted from each substrate W into the phosphoric acid aqueous solution. Therefore, the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 is likely to increase. Here, it is preferable that the phosphoric acid aqueous solution in the inner tank 341 is quickly moved to the outer tank 343 by performing a normal cycle before the end of the immersion step S12. When the silicon concentration of the phosphoric acid aqueous solution is greater than the reference value, the pure water or phosphoric acid aqueous solution is supplied from the pure water supply part 41 or the phosphoric acid aqueous solution supply part 43 to appropriately reduce the silicon concentration in the phosphoric acid aqueous solution in the circulation system . Therefore, the concentration of silicon in the phosphoric acid aqueous solution in the inner tank 341 can be quickly adjusted by normal circulation.

In the example of FIG. 3, in the unloading step S13 after the immersion step S12 The normal cycle is still in progress. In this case, by supplying each processing liquid from each supply part 41 to 43 during or after the immersion step S12, it is possible to make the phosphoric acid aqueous solution in the inner tank 341 during the period until the next etching processing cycle starts. The phosphoric acid concentration and silicon concentration quickly became appropriate. In addition, in the immersion step S12, when the bypass cycle is performed, the temperature of the phosphoric acid aqueous solution in the inner tank 341 may decrease. On the other hand, in the unloading step S13 after the immersion step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly increased by performing the normal circulation.

Furthermore, in the example of FIG. 3, it is set so that the bypass cycle is performed only in a part of the immersion step S12. However, the bypass cycle may also be performed during the entire period of the immersion step S12. In addition, the bypass cycle may be performed during part or all of the carry-in step S11 or the carry-out step S13.

In addition, the bypass cycle is not necessarily performed in all cycles of the etching process. For example, the control part 7 may accept the change of whether to perform a bypass cycle in each cycle of an etching process via an operation part. In addition, the setting or change of the time point at which the bypass cycle is executed in each cycle may be accepted via the operation unit. In addition, the control unit 7 may be configured to automatically execute the bypass loop in accordance with the establishment or failure of a predetermined requirement. In this case, the control unit 7 may include a determination unit that determines whether or not the predetermined requirements are satisfied based on the threshold value. In addition, as predetermined requirements, for example, the etching amount of the substrate W, the temperature of the phosphoric acid aqueous solution in the circulation system, the phosphoric acid concentration, or the silicon concentration can be set.

In addition, although each on-off valve and each flow control valve included in the etching processing apparatus 1 are described as an example of a person controlled by the control unit 7, the operator may manually operate it. Furthermore, it is also possible to switch between the normal cycle and the bypass cycle by manual operation by the operator.

Although the present invention has been described in detail, in all aspects, the above description is only an example, and is not intended to limit the present invention to this scope. The countless modified examples that are not illustrated can be interpreted as those obtained by inferences without departing from the scope of the present invention. The components described in the above-mentioned embodiments and modifications may be appropriately combined or omitted as long as they do not contradict each other.

7: Control Department

34: processing tank

36: substrate lifting mechanism

40: Phosphoric acid aqueous solution supply part

41: Pure water supply department

42: Silicon Supply Department

50: The first piping

51: Pump

52: heater

53: filter

55: Bypass piping

57, 61, 511, 513: On-off valve

58: Flow control valve

59: Flow Detector

60: The second piping

90: Disposal of piping

91, 95: waste valve

93: Cooling tank

341: Inner Slot

341B: bottom

341P: first opening

343: Outer Slot

343P: 2nd opening

401: supply piping

403: Flow Detector

405: Flow control valve

407: On-off valve

411: Supply Piping

413: Flow Detector

415: Flow Control Valve

417: On-off valve

421: Supply Piping

423: Flow Detector

425: Flow control valve

427: On-off valve

501: Concentration detector

531: branch

533: Connection

601: Connecting part

901: Concentration Detector

Pos1: upper position

Pos2: down position

W: substrate

Claims (8)

A substrate processing apparatus, which processes substrates, is provided with: a bottomed cylindrical inner tank with a first opening at the upper part; a bottomed cylindrical outer tank provided on the outer periphery of the inner tank, and It has a second opening at the upper part; a first pipe connecting the inside of the inner tank and the inside of the outer tank; a pump, which is installed in the first pipe, and transports the processing liquid from the outer tank to the inner tank; a heater , Which is provided in the first piping to heat the processing liquid passing through the first piping; the second piping connects the piping portion and the outer tank, and the piping portion is located in the first piping and the heater and Between the inner tank; the second piping valve, which is installed in the second piping, to change the flow rate of the processing liquid passing through the second piping; the first piping valve, which is installed in the first piping Between the part connecting the second piping and the inner tank, the flow rate of the treatment liquid passing through the first piping is changed; the bypass piping is branched from the branch and connected to the inner tank, and the branch is located at the Between the heater and the first piping valve; and the bypass piping valve, which is provided in the bypass piping and changes the flow rate of the processing liquid passing through the bypass piping. The substrate processing apparatus of claim 1, wherein one end of the first pipe is connected to the bottom of the inner tank. The substrate processing apparatus of claim 1 or 2, wherein the valve for the first piping is provided between the heater and the inner valve in the first piping Between slots. The substrate processing apparatus according to claim 3, further comprising: a control unit connected to the first piping valve and the second piping valve to control the first piping valve and the second piping valve . The substrate processing apparatus of claim 4, wherein the control unit executes a first cycle control process and a second cycle control process, and the first cycle control process opens the first piping valve and closes the second piping valve, and The second loop control process opens the first piping valve and the second piping valve. The substrate processing apparatus according to claim 3, wherein the second pipe is connected between the branch portion of the bypass pipe and the valve for the bypass pipe. The substrate processing apparatus of claim 1 or 2, wherein the second pipe is connected to the inside of the outer tank through the second opening. A substrate processing method, which processes a substrate in the substrate processing apparatus of any one of claims 1 to 7; it includes the following steps: a) the step of immersing the substrate in the above-mentioned treatment liquid stored in the above-mentioned inner tank; b) In the above step a), the step of returning the processing liquid passing through the first pipe to the inner tank, and returning the processing liquid passing through the first pipe to the outer tank through the second pipe; And c) in the step b), a step of heating the treatment liquid passing through the first pipe.

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