TWI727839B - Spray head structure of semiconductor atomic layer deposition device - Google Patents

Abstract

A spray head structure of a semiconductor atomic layer deposition device, comprising a diffuser disk, a disk cover, a gas draft tube and a gas introducer, the diffuser disk has a plurality of nozzle holes penetrating through it, and the disk cover is combined on the top surface of the diffuser disk , The center has a perforation, the bottom surface has an expansion groove communicating with the perforation, the gas drainage tube is combined with the disc cover and has an inverted funnel-shaped drainage channel, and the gas introducer is closed on the gas drainage tube At the upper end, the bottom face has an inner groove, and the peripheral surface has at least one inlet flow passage. The inner end of the inlet flow passage has a downwardly inclined angle to communicate with an outlet section of the inner groove. The central axis of the outlet section forms a The eccentric angle makes it deviate from the center axis of the gas introducer; thereby, the gas can form a vortex to greatly improve the uniformity of the deposited film.

Description

Spray head structure of semiconductor atomic layer deposition device

The present invention relates to the technical field of a spray head structure for introducing and dispersing gas in a semiconductor atomic layer deposition device for depositing a thin film on a substrate, in particular to a method that can improve the unevenness of the thin film at the edge of the substrate so that the overall thin film is more The spray head structure of a uniform semiconductor atomic layer deposition device.

A spray head structure in a conventional semiconductor atomic layer deposition device for depositing a thin film on a substrate, as shown in the US 20140090599 A1, US 20180158671 A1 and US 20180166298 A1 patents, is mainly used for a diffuser with a plurality of The guide channels are respectively used to guide the gas to the center and the periphery of the diffuser, so that the gas can be supplied to all the nozzle holes densely distributed on the diffuser. However, due to the different lengths of the guide channels, it will be difficult to control the gas flow in each inlet flow channel, which will result in different gas flow from each flow channel to each area of the diffuser. The gas ejected from each corresponding nozzle hole will be uneven (the longer the distance, the smaller the flow rate), so when the film is deposited, there is a problem of uneven film at the edge of the substrate.

Another spray head structure in a conventional semiconductor atomic layer deposition apparatus is shown in the US 20190048467 A1 patent. Please refer to FIG. 1, because the center axis B of the inlet runner 186 is aligned with the center of the gas introducer 192 Axis A Intersect (that is, the inlet flow passage 186 is directly connected to the center of the gas introducer 192), so when the gas is introduced from the inlet flow passage 186 to the inner passage 193 of the gas introducer 192, it will blow directly on one of the side walls of the inner passage 193. Turbulent flow makes the gas guided to the diffuser disc uncontrollable. On the other hand, the gas cannot be uniformly diffused to the periphery of the diffuser disc. Therefore, there is a problem of uneven film at the edge of the substrate during film deposition.

In view of this, the inventor of the present invention developed and designed the present invention in order to solve the above-mentioned problems, and intensively conceived, and actively researched and improved trial production.

The main purpose of the present invention is to solve the problem of poor uniformity of the deposited film in the spray head structure of the conventional semiconductor atomic layer deposition apparatus.

The spray head structure of the semiconductor atomic layer deposition apparatus of the present invention includes a diffusion disk, a disk cover, a gas draft tube and a gas introducer. Wherein, the diffuser has a plurality of nozzle holes penetrating through the upper and lower sides. The disk cover is combined with the top surface of the diffusion disk, the center is provided with a through hole, the bottom surface is provided with an expansion groove communicating with the through hole, and the bottom surface opening of the expansion groove covers the plurality of nozzle holes. The gas drainage tube is combined with the disc cover and has a drainage channel that penetrates through the upper and the lower one. The lower end of the drainage channel is communicated with the perforation, and is in the shape of an inverted funnel that gradually shrinks from the bottom to the top. The gas introducer is sealed on the upper end of the gas drainage tube, the bottom surface has an inner groove communicating with the drainage channel, and the peripheral surface has at least one air inlet channel for connecting the air inlet pipe. The inner end of the channel has a downwardly inclined angle to communicate with an air outlet section of the inner groove, and the central axis of the air outlet section forms an eccentric angle to deviate from the central axis of the gas introducer.

In the spray head structure of the semiconductor atomic layer deposition apparatus provided by the present invention, when gas is introduced into the inlet flow channel, the gas can be sprayed into the gas draft tube by the downward inclination angle and eccentric angle of the gas outlet section After that, it will follow the inverted funnel-shaped drainage channel to form a vortex that expands from top to bottom, and then distributes evenly on the top surface of the diffuser along the expansion groove, so that the plural nozzle holes of the diffuser can be uniform The gas is sprayed, and the uniformity of the overall film on the substrate can be greatly improved when the film is deposited, so as to effectively improve the defect of uneven film at the edge of the conventional substrate.

[Prior Art]

186: intake runner

192: Gas Introducer

193: Internal Channel

A: The central axis of the gas introducer

B: The central axis of the intake runner

[this invention]

10: diffuser

11: Groove

12: nozzle

20: Pan cover

21: Piercing

22: Expansion

30: Gas drainage tube

31: Drainage channel

40: gas introducer

41: inner groove

42: intake runner

43: intake section

44: Exhalation section

50: intake pipe

60: substrate

X: The central axis of the intake section

Y: The central axis of the gas introducer

Z: The central axis of the outlet section

[Figure 1] is a schematic top view of the gas introducer of the conventional sprinkler head structure.

[Figure 2] is a three-dimensional exploded schematic view of the present invention.

[Figure 3] is a schematic diagram of the three-dimensional assembly of the present invention.

[Figure 4] is an enlarged schematic cross-sectional view of the gas introducer of the present invention.

[Figure 5] is a top view enlarged schematic view of the gas introducer of the present invention.

[Figure 6] is a schematic diagram of the use state of the present invention.

Please refer to Figures 2 to 6, which show the spray head structure of the semiconductor atomic layer deposition apparatus of the present invention including a diffusion disk 10, a disk cover 20, a gas draft tube 30 and a gas introducer 40, in which:

The diffuser 10 has a groove 11 on the top surface, and the groove bottom of the groove 11 has a plurality of nozzle holes 12 penetrating through the bottom surface.

The disk cover 20 is integrated in the groove 11 of the diffuser disk 10, and the center There is a through hole 21, and the bottom surface of the through hole 21 gradually expands from the lower end of the through hole 21 to a taper-shaped expansion groove 22. The bottom opening of the expansion groove 22 covers the plurality of nozzle holes 12.

The gas drainage tube 30 is combined with the disk cover 20, and has a drainage channel 31 that penetrates through the upper and the lower one. The lower end of the drainage channel 31 communicates with the perforation 21 and gradually shrinks from bottom to top. The inverted funnel shape.

The gas introducer 40 is sealed on the upper end of the gas drainage pipe 30. The bottom surface has an inner groove 41 for communicating with the drainage groove 31, and the peripheral surface has at least one air inlet passage 42 penetrating into the inner groove 41. The inlet runner 42 includes an inlet section 43 and an outlet section 44. The inlet section 43 is arranged horizontally, and the outer end extends to the circumferential surface of the gas introducer 40 for connecting with an inlet pipe 50. For introducing gas, the central axis X of the inlet section 43 extends to intersect the central axis Y of the gas introducer 40, and the outlet section 44 is inclined downward by an angle from the inner end of the inlet section 43 The extension extends through the inner groove 41, and makes the central axis Z of the gas outlet section 44 form an eccentric angle that deviates from the central axis Y of the gas introducer 40. The downward inclination angle of the air outlet section 44 is preferably 30 degrees, and the eccentric angle is 10 degrees.

It can be seen in FIGS. 4 to 6 that when the gas is introduced into the gas inlet channel 42 of the gas introducer 40 from the gas inlet pipe 50, the downward inclination angle and eccentricity of the gas outlet section 44 can be used. Angle, when the gas is sprayed into the gas drainage tube 30, it will follow the inverted funnel-shaped drainage channel 31 to form a vortex that expands from top to bottom, and then follow the cone-shaped expansion groove 22 of the disk cover 20 evenly. Distributed on the bottom surface of the groove 11 of the diffuser plate 10, so that the plural nozzle holes 12 of the diffuser plate 10 can evenly spray gas, and then When the film is deposited, the uniformity of the overall film on the substrate 60 can be greatly improved, so as to effectively improve the disadvantage of the conventional film unevenness at the edge of the substrate.

To sum up, because the present invention has the above advantages and practical value, and no similar products have been published in similar products, it has met the requirements of an invention patent application, and an application is filed in accordance with the law.

10: diffuser

11: Groove

12: nozzle

20: Pan cover

21: Piercing

22: Expansion

30: Gas drainage tube

31: Drainage channel

40: gas introducer

41: inner groove

42: intake runner

43: intake section

44: Exhalation section

50: intake pipe

Claims (7)

A spray head structure of a semiconductor atomic layer deposition device, comprising: a diffusion disk with a plurality of nozzle holes penetrating through the upper and lower sides; a disk cover combined with the top surface of the diffusion disk, with a through hole in the center, and a bottom surface There is an expansion slot connected to the perforation, and the bottom opening of the expansion slot covers the plurality of nozzle holes; a gas drainage pipe is connected to the disk cover and has a drainage channel that penetrates the upper and lower drainage channels. The lower end of the channel communicates with the perforation and is in the shape of an inverted funnel that gradually shrinks from bottom to top; and a gas introducer, which is covered on the upper end of the gas drainage tube, and the bottom surface has an inner groove communicating with the drainage channel , The peripheral surface has at least one inlet flow passage for connecting with at least one inlet pipe respectively, the inner end of the inlet flow passage has a downwardly inclined angle to communicate with an outlet section of the inner groove, and the center of the outlet section The axis system forms an eccentric angle deviated from the central axis of the gas introducer. The spray head structure of the semiconductor atomic layer deposition apparatus of claim 1, wherein the top surface of the diffusion disk has a groove, and the plurality of nozzle holes penetrate from the groove bottom of the groove to the bottom surface of the diffusion disk, and the disk cover It is combined in the groove of the diffuser. According to the spray head structure of the semiconductor atomic layer deposition apparatus of claim 1, wherein the expansion groove gradually expands from the lower end of the perforation to the periphery of the bottom surface of the disk cover and is tapered. According to the spray head structure of the semiconductor atomic layer deposition apparatus of claim 1, wherein the outer end of the air inlet runner has an air inlet section arranged horizontally, and the air outlet section extends from the inner end of the air inlet section. The spray head structure of the semiconductor atomic layer deposition apparatus of claim 4, wherein the central axis of the air inlet section of the air inlet runner extends to intersect the central axis of the gas introducer. For the spray head structure of the semiconductor atomic layer deposition apparatus of claim 1, wherein the downward inclination angle of the gas outlet section is 30 degrees. For the spray head structure of the semiconductor atomic layer deposition apparatus of claim 1, wherein the eccentric angle of the gas outlet section is 10 degrees.

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