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TWI726977B - Defect inspection device - Google Patents

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TWI726977B
TWI726977B TW106101637A TW106101637A TWI726977B TW I726977 B TWI726977 B TW I726977B TW 106101637 A TW106101637 A TW 106101637A TW 106101637 A TW106101637 A TW 106101637A TW I726977 B TWI726977 B TW I726977B
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defect
area
image
wafer
effective area
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TW201805620A (en
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山本比佐史
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日商東麗工程股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Health & Medical Sciences (AREA)
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Abstract

本發明提供一種能夠抑制缺陷之漏檢、或缺陷之誤檢之缺陷檢查裝置。 該缺陷檢查裝置100包含控制部50,該控制部50基於由攝像部40拍攝所得之元件晶片70之圖像,而檢測元件晶片70之周緣區域72之外側之邊緣74及有效區域71,基於所檢測出之周緣區域72之外側之邊緣74及有效區域71,而決定用以檢查元件晶片70之缺陷之檢查區域75,並將元件晶片70之檢查區域75之對應圖像與預先所記憶之良品之元件晶片70之圖像加以比較,藉此檢測元件晶片70之缺陷。The present invention provides a defect inspection device capable of suppressing missed inspections of defects or false inspections of defects. The defect inspection apparatus 100 includes a control unit 50 based on the image of the element wafer 70 captured by the imaging unit 40, and detects the edge 74 and the effective area 71 outside the peripheral area 72 of the element wafer 70, based on the The edge 74 and the effective area 71 outside the peripheral area 72 are detected to determine the inspection area 75 used to inspect the defect of the component wafer 70, and the corresponding image of the inspection area 75 of the component wafer 70 is stored in advance. The images of the device wafer 70 are compared to detect defects of the device wafer 70.

Description

缺陷檢查裝置Defect inspection device

本發明係關於一種缺陷檢查裝置,尤其關於一種包含藉由與良品之元件晶片之圖像進行比較而檢測元件晶片之缺陷之缺陷檢測部的缺陷檢查裝置。 The present invention relates to a defect inspection device, and more particularly, to a defect inspection device including a defect detection section that detects defects of the device chip by comparing with the image of the good device chip.

先前,已知有一種包含藉由與良品之元件晶片之圖像進行比較而檢測元件晶片之缺陷之缺陷檢測部的缺陷檢查裝置(例如參照專利文獻1)。 Previously, there has been known a defect inspection device including a defect detection section that detects defects of an element wafer by comparing with an image of a good element wafer (for example, refer to Patent Document 1).

於上述專利文獻1中揭示有一種缺陷檢查方法,該缺陷檢查方法係求出標準圖像與檢查圖像之差,然後基於標準圖像與檢查圖像之差來檢查工件之缺陷。於該檢查方法中,於教導過程中對多個良品之工件進行拍攝,求出圖像之每一像素之濃淡值之平均值(標準圖像)。又,於檢查過程中,對檢查對象之工件進行拍攝。再者,於拍攝檢查對象之工件時,拍攝與已被拍攝之良品之工件相同之部分作為檢查圖像。然後,基於良品之工件之標準圖像與檢查對象之工件之檢查圖像之比較,判定缺陷之有無。 A defect inspection method is disclosed in the aforementioned Patent Document 1. The defect inspection method calculates the difference between the standard image and the inspection image, and then inspects the workpiece for defects based on the difference between the standard image and the inspection image. In this inspection method, multiple good-quality workpieces are photographed during the teaching process, and the average value of the shade value of each pixel of the image (standard image) is obtained. In addition, during the inspection process, the workpiece to be inspected is photographed. Furthermore, when photographing the workpiece of the inspection target, the same part as the workpiece of the good product that has been photographed is photographed as the inspection image. Then, based on the comparison between the standard image of the workpiece of the good product and the inspection image of the workpiece of the inspection target, the presence or absence of defects is determined.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平10-123064號公報 [Patent Document 1] Japanese Patent Laid-Open No. 10-123064

然而,於上述專利文獻1所記載之缺陷檢查方法中,於拍攝檢查對象 之工件時,拍攝與已被拍攝之良品之工件相同之部分(以下稱為有效區域)作為檢查圖像。即,被拍攝之檢查對象之工件之部分(有效區域)與標準圖像相對應而固定。因此,存在無法檢測出於工件之有效區域外產生之缺陷之缺點。再者,就於工件之有效區域外產生之缺陷而言,存在缺陷發展(變大)從而於未來對工件之功能產生不良影響之情形。又,存在如下缺點:雖不包含缺陷,但於將檢查對象之工件之端部切斷之情形時,基於位於有效區域內之已被切斷之端部之圖像與標準圖像之差異,而誤識別為於檢查對象之工件產生缺陷。即,於上述專利文獻1所記載之缺陷檢查方法中,存在發生缺陷之漏檢、或缺陷之誤檢之問題。 However, in the defect inspection method described in Patent Document 1, the inspection object is photographed In the case of the workpiece, the part (hereinafter referred to as the effective area) that is the same as the workpiece that has been photographed is taken as the inspection image. That is, the part (effective area) of the workpiece of the inspection object being photographed corresponds to the standard image and is fixed. Therefore, there is a disadvantage that it is impossible to detect defects generated outside the effective area of the workpiece. Furthermore, as for the defects generated outside the effective area of the workpiece, there is a situation in which the defect develops (increases), which will adversely affect the function of the workpiece in the future. In addition, there is the following disadvantage: Although it does not contain defects, when the end of the workpiece to be inspected is cut, based on the difference between the image of the cut end located in the effective area and the standard image, Misrecognition is a defect in the inspection object. That is, in the defect inspection method described in the above-mentioned Patent Document 1, there is a problem of missed inspection of defects or false inspection of defects.

本發明係為了解決如上所述之問題而完成者,本發明之目的之一在於提供一種能夠抑制缺陷之漏檢、或缺陷之誤檢之缺陷檢查裝置。 The present invention was completed in order to solve the above-mentioned problems, and one of the objectives of the present invention is to provide a defect inspection device that can suppress the missed inspection of defects or the false inspection of defects.

為了達成上述目的,本發明之一態樣之缺陷檢查裝置包含:攝像部,其對包含形成有元件之有效區域、及設置於有效區域之周緣之周緣區域之元件晶片進行拍攝;邊緣檢測部,其基於由攝像部拍攝所得之元件晶片之圖像,檢測元件晶片之周緣區域之外側之邊緣;有效區域檢測部,其基於由攝像部拍攝所得之元件晶片之圖像,檢測元件晶片之有效區域;檢查區域決定部,其基於所檢測出之周緣區域之外側之邊緣及有效區域,決定用以檢查元件晶片之缺陷之檢查區域;以及缺陷檢測部,其藉由將元件晶片之檢查區域之對應圖像與預先所記憶之良品之元件晶片之圖像加以比較,而檢測元件晶片之缺陷。 In order to achieve the above-mentioned object, a defect inspection device of one aspect of the present invention includes: an imaging section that photographs an element wafer including an effective area formed with elements and a peripheral area provided on the periphery of the effective area; an edge detection section, It is based on the image of the element wafer taken by the imaging unit to detect the edge outside the peripheral area of the component wafer; the effective area detection unit, which is based on the image of the component wafer taken by the imaging unit, detects the effective area of the element wafer ; The inspection area determination section, which determines the inspection area for inspecting the defect of the component chip based on the edge and the effective area outside the detected peripheral area; and the defect detection section, which corresponds to the inspection area of the component wafer The image is compared with the image of the component chip of the good product stored in advance, and the defect of the component chip is detected.

於本發明之一態樣之缺陷檢查裝置中,如上所述,包含檢查區域決定部,其基於所檢測出之周緣區域之外側之邊緣及有效區域,決定用以檢 查元件晶片之缺陷之檢查區域。藉此,能夠使檢查區域與元件晶片之周緣區域之外側之邊緣(元件晶片之大小)相對應地變化,故而與檢查區域固定之情形時不同,能夠抑制缺陷之漏檢。又,藉由使檢查區域與元件晶片之大小相對應地變化,即便於元件晶片之端部被切斷之情形時,被切斷部分亦成為檢查區域外。藉此,能夠抑制因端部被切斷後之元件晶片之圖像與預先所記憶之良品之元件晶片之圖像不同而引起之缺陷誤檢。如此,能夠抑制缺陷之漏檢、或缺陷之誤檢。 In the defect inspection device of one aspect of the present invention, as described above, an inspection area determining unit is included, which determines the inspection area based on the edge and the effective area outside the detected peripheral area. The inspection area for checking component wafer defects. Thereby, the inspection area can be changed correspondingly to the outer edge (the size of the element wafer) of the peripheral area of the element wafer. Therefore, unlike when the inspection area is fixed, it is possible to suppress missed inspection of defects. In addition, by changing the inspection area corresponding to the size of the element wafer, even when the end of the element wafer is cut, the cut portion becomes outside the inspection area. Thereby, it is possible to suppress the false detection of defects caused by the difference between the image of the device chip after the end portion is cut off and the image of the good device chip memorized in advance. In this way, it is possible to suppress missed inspections of defects or false inspections of defects.

於上述一態樣之缺陷檢查裝置中,較佳為:良品之元件晶片之圖像係切斷前之切斷前元件晶片之與1個元件晶片對應之部分之圖像;上述切斷前元件晶片包括複數個有效區域、及設置於複數個有效區域之間而包含周緣區域之切斷區域,上述1個元件晶片於有效區域及周緣區域兩者中至少包含周緣區域。此處,於使檢查區域與元件晶片之周緣區域之外側之邊緣(元件晶片之大小)相對應地變化之情形時,於使用切斷後之元件晶片之圖像作為良品之元件晶片之圖像時,存在檢查區域之大小(成為檢查對象之元件晶片之大小)與切斷後之元件晶片之大小不同之情形。於此情形時,即便將成為檢查對象之元件晶片之檢查區域之對應圖像與切斷後之良品之元件晶片之圖像加以比較,亦難以準確地判斷缺陷之有無。因此,藉由如上所述,使用切斷前之切斷前元件晶片之、與包含有效區域及周緣區域中至少周緣區域之1個元件晶片對應之部分之圖像作為良品之元件晶片之圖像,能夠將與成為檢查對象之元件晶片之檢查區域之大小相對應之切斷前元件晶片之圖像用作良品之元件晶片之圖像。其結果,能夠準確地判斷缺陷之有無。 In the defect inspection apparatus of the above aspect, it is preferable that: the image of the good component wafer is the image of the part corresponding to one component wafer of the component wafer before cutting before cutting; The chip includes a plurality of effective areas and a cut area provided between the plurality of effective areas and including the peripheral area. The one device wafer includes at least the peripheral area in both the effective area and the peripheral area. Here, when the inspection area is changed to correspond to the edge (the size of the element wafer) outside the peripheral area of the element wafer, when using the image of the cut element wafer as the image of the good element wafer , There are cases where the size of the inspection area (the size of the component wafer to be inspected) is different from the size of the component wafer after cutting. In this case, even if the corresponding image of the inspection area of the component wafer to be inspected is compared with the image of the good component wafer after cutting, it is difficult to accurately determine the presence or absence of defects. Therefore, as described above, the image of the part of the element chip before cutting before cutting that corresponds to one element chip including at least the peripheral area of the effective area and the peripheral area is used as the image of the good element wafer , The image of the component wafer before cutting corresponding to the size of the inspection area of the component wafer to be inspected can be used as the image of the good component wafer. As a result, it is possible to accurately determine the presence or absence of defects.

又,於使用切斷後之元件晶片之圖像作為良品之元件晶片之圖像之 情形時,存在於切斷後之元件晶片包含缺陷之情形。又,於將切斷前元件晶片切斷之情形時,存在由於切斷裝置(切晶裝置等)之精度而導致元件晶片之切斷位置有所偏差之情形。即,於使用切斷後之元件晶片之圖像作為良品之元件晶片之圖像之情形時,存在作為與成為檢查對象之元件晶片進行比較之良品之圖像不合適之情形。因此,藉由使用切斷前元件晶片之圖像作為良品之元件晶片之圖像,能夠容易地獲得適當之良品之圖像。 Also, when using the image of the device chip after cutting as the image of the good device chip In this case, there are cases where the device wafer after cutting contains defects. In addition, when cutting the element wafer before cutting, the cutting position of the element wafer may be deviated due to the accuracy of the cutting device (die cutting device, etc.). That is, in the case of using the image of the cut element wafer as the image of the good element wafer, there may be cases in which the image of the good product to be compared with the element wafer to be inspected is not suitable. Therefore, by using the image of the device chip before cutting as the image of the good device chip, it is possible to easily obtain an appropriate good product image.

於上述一態樣之缺陷檢查裝置中,較佳為進而包含:缺陷種類判別部,其基於所檢測出之缺陷之形狀,判別缺陷之種類;及良品判定部,其基於由缺陷種類判別部所判別出之缺陷之種類、及缺陷相對於有效區域之位置,判定元件晶片為良品抑或為不良品。此處,存在即便於存在缺陷之情形時亦將元件晶片視為良品之情形。因此,藉由基於缺陷之種類、及缺陷相對於有效區域之位置來判定元件晶片為良品抑或為不良品,能夠抑制僅因存在缺陷便將良品之元件晶片判定為不良品之情況。 In the defect inspection device of the above aspect, it is preferable to further include: a defect type judging section that judges the type of defect based on the shape of the detected defect; and a good product judging section based on the defect type judging section The type of the identified defect and the position of the defect relative to the effective area are determined to determine whether the device chip is a good product or a defective product. Here, even when there is a defect, the device chip is regarded as a good product. Therefore, by determining whether the device chip is a good product or a defective product based on the type of the defect and the position of the defect relative to the effective area, it is possible to prevent a good device chip from being judged as a defective product only because of the defect.

於此情形時,較佳為以如下方式構成:於缺陷種類判別部基於缺陷之形狀而判別出缺陷為元件晶片之缺損之情形時,良品判定部於缺損到達有效區域之情形時將元件晶片判定為不良品,於缺損未達有效區域之情形時將元件晶片判定為良品。此處,缺損未來變大(缺損自周緣區域逐漸發展至有效區域)之可能性相對較小。因此,藉由若缺損未達有效區域則將元件晶片判定為良品,能夠抑制僅因存在缺損便將良品之元件晶片判定為不良品之情況。 In this case, it is preferable to be configured as follows: when the defect type determination section determines that the defect is a defect of the device chip based on the shape of the defect, the good product determination section determines the device chip when the defect reaches the effective area It is a defective product. If the defect does not reach the effective area, the device chip will be judged as a good product. Here, the possibility that the defect will become larger in the future (the defect will gradually develop from the peripheral area to the effective area) is relatively small. Therefore, by determining the device chip as a good product if the defect does not reach the effective area, it is possible to prevent a good device chip from being determined as a defective product only because of the defect.

於包含上述缺陷種類判別部之缺陷檢查裝置中,較佳為以如下方式構成:於缺陷種類判別部基於缺陷之形狀而判別出缺陷為元件晶片之龜裂之情形時,良品判定部無論龜裂是否到達有效區域,均將元件晶片判定為 不良品。此處,龜裂未來變大(龜裂自周緣區域逐漸發展至有效區域)之可能性相對較大。因此,藉由無論龜裂是否到達有效區域均將元件晶片判定為不良品,能夠預先將儘管當前為良品但未來會成為不良品之元件晶片排除。 In the defect inspection apparatus including the above-mentioned defect type discrimination section, it is preferable to be configured as follows: when the defect type discrimination section determines that the defect is a crack of the element chip based on the shape of the defect, the good product determination section does not matter whether the defect is cracked Whether it reaches the effective area, the component chip is judged as Defective product. Here, the possibility that the cracks will become larger in the future (cracks will gradually develop from the peripheral area to the effective area) is relatively high. Therefore, by determining the device chip as a defective product regardless of whether the crack reaches the effective area or not, it is possible to eliminate in advance the device chip that is currently a good product but will become a defective product in the future.

根據本發明,如上所述,能夠抑制缺陷之漏檢、或缺陷之誤檢。 According to the present invention, as described above, it is possible to suppress missed detection of defects or erroneous detection of defects.

10:移動台 10: mobile station

11:X軸滑塊 11: X-axis slider

12:Y軸滑塊 12: Y-axis slider

20:台部 20: Desk

30:載置台 30: Mounting table

40:攝像部 40: Camera Department

41:鏡筒 41: lens barrel

42:半反射鏡 42: half mirror

43:物鏡 43: Objective

44:攝像機 44: Camera

44a:受光元件 44a: Light receiving element

50:控制部(邊緣檢測部、有效區域檢測部、檢查區域決定部、缺陷檢測部、缺陷種類判別部、良品判定部) 50: Control unit (edge detection unit, effective area detection unit, inspection area determination unit, defect detection unit, defect type discrimination unit, good product judgment unit)

60:記憶部 60: Memory Department

70:元件晶片 70: Component chip

70a:元件晶片 70a: Component wafer

70b:元件晶片 70b: Component chip

70c:元件晶片 70c: Component chip

70d:元件晶片 70d: component chip

71:有效區域 71: effective area

72:周緣區域 72: Peripheral area

72a:配置於有效區域之Y1方向側之部分 72a: The part arranged on the Y1 direction side of the effective area

72b:配置於有效區域之Y2方向側之部分 72b: The part arranged on the Y2 direction side of the effective area

72c:配置於有效區域之Y1方向側之部分 72c: The part arranged on the Y1 direction side of the effective area

72d:配置於有效區域之Y2方向側之部分 72d: The part arranged on the Y2 direction side of the effective area

73:切斷區域 73: Cut off area

74:邊緣 74: Edge

75:檢查區域 75: Check the area

75a:檢查區域 75a: Inspection area

80:台部 80: Taiwan

81:片狀構件 81: sheet member

82:基板(晶圓) 82: Substrate (wafer)

83:切斷前元件晶片 83: Cutting off the front component wafer

90:缺陷 90: Defect

90a:缺損 90a: Defect

90b:龜裂 90b: cracked

100:缺陷檢查裝置 100: Defect inspection device

171:有效區域 171: effective area

172:周緣區域 172: Peripheral area

175:檢查區域 175: Check the area

C:切斷線 C: Cut the line

W1:寬度 W1: width

W2:寬度 W2: width

W3:寬度 W3: width

W4:寬度 W4: width

W5:寬度 W5: width

圖1係本發明之一實施形態之缺陷檢查裝置之整體圖。 Fig. 1 is an overall view of a defect inspection device according to an embodiment of the present invention.

圖2係用以說明本發明之一實施形態之缺陷檢查裝置之攝像部之動作之圖。 Fig. 2 is a diagram for explaining the operation of the imaging unit of the defect inspection device in one embodiment of the present invention.

圖3係表示切斷前元件晶片之圖。 Fig. 3 is a diagram showing the element wafer before cutting.

圖4係圖3之局部放大圖(表示良品之元件晶片之圖)。 Fig. 4 is a partial enlarged view of Fig. 3 (a diagram showing a good component chip).

圖5係表示切斷後之元件晶片之圖。 Fig. 5 is a diagram showing the device wafer after cutting.

圖6係用以說明本發明之一實施形態之缺陷檢查裝置之檢查前之動作之流程圖。 Fig. 6 is a flow chart for explaining the operation before inspection of the defect inspection device in one embodiment of the present invention.

圖7係用以說明良品之元件晶片之圖像之製作之準備之流程圖。 FIG. 7 is a flow chart for explaining the preparation of the production of the image of the component chip of the good product.

圖8係用以說明良品之元件晶片之圖像之製作之流程圖。 Fig. 8 is a flow chart for explaining the production of the image of the component chip of the good product.

圖9係用以說明本發明之一實施形態之缺陷檢查裝置之檢查時之動作之流程圖。 FIG. 9 is a flowchart for explaining the operation of the defect inspection device in one embodiment of the present invention during inspection.

圖10係用以說明成為檢查對象之元件晶片之檢查之流程圖。 FIG. 10 is a flowchart for explaining the inspection of the component wafer as the inspection object.

圖11係用以說明周緣區域之檢查之流程圖。 Figure 11 is a flow chart for explaining the inspection of the peripheral area.

圖12係表示本實施形態之變化例之檢查區域之圖。 Fig. 12 is a diagram showing an inspection area of a modified example of this embodiment.

以下,基於圖式對將本發明具體化之實施形態進行說明。 Hereinafter, an embodiment embodying the present invention will be described based on the drawings.

[本實施形態] [This embodiment]

(缺陷檢查裝置之構造) (Structure of defect inspection device)

參照圖1及圖2,對本實施形態之缺陷檢查裝置100之構造進行說明。 1 and 2, the structure of the defect inspection apparatus 100 of this embodiment will be described.

如圖1所示,缺陷檢查裝置100包含移動台10。移動台10包含X軸滑塊11及Y軸滑塊12。X軸滑塊11配置於台部20上。又,Y軸滑塊12配置於X軸滑塊11上。 As shown in FIG. 1, the defect inspection apparatus 100 includes a mobile station 10. The mobile station 10 includes an X-axis slider 11 and a Y-axis slider 12. The X-axis slider 11 is arranged on the table portion 20. In addition, the Y-axis slider 12 is arranged on the X-axis slider 11.

又,缺陷檢查裝置100包含載置台30。載置台30配置於Y軸滑塊12上。而且,載置台30係以藉由移動台10而沿X方向及Y方向移動之方式構成。又,載置台30係為了載置切斷前元件晶片83(參照圖4)、或切斷後之元件晶片70(參照圖5)而構成。 In addition, the defect inspection apparatus 100 includes a mounting table 30. The mounting table 30 is arranged on the Y-axis slider 12. In addition, the mounting table 30 is configured to move in the X direction and the Y direction by the moving table 10. In addition, the mounting table 30 is configured to mount the element wafer 83 before cutting (see FIG. 4) or the element wafer 70 after cutting (see FIG. 5).

又,缺陷檢查裝置100包含攝像部40。攝像部40係為了對包含形成有元件之有效區域71及設置於有效區域71之周緣之周緣區域72的元件晶片70(參照圖4及圖5)進行拍攝而構成。攝像部40包含鏡筒41、半反射鏡42、物鏡43、及攝像機44。攝像機44包含受光元件44a。而且,攝像機44係以將拍攝所得之元件晶片70之圖像輸出至下述控制部50之方式構成。 In addition, the defect inspection apparatus 100 includes an imaging unit 40. The imaging unit 40 is configured to image the element wafer 70 (refer to FIGS. 4 and 5) including the effective area 71 in which the elements are formed and the peripheral area 72 provided on the periphery of the effective area 71. The imaging unit 40 includes a lens barrel 41, a half mirror 42, an objective lens 43, and a camera 44. The camera 44 includes a light receiving element 44a. In addition, the camera 44 is configured to output an image of the element wafer 70 obtained by shooting to the control unit 50 described below.

又,如圖2所示,攝像部40係以依序拍攝相對於攝像部40相對性地移動之複數個元件晶片70之方式構成。具體而言,元件晶片70藉由移動台10而相對於攝像部40相對性地移動。 In addition, as shown in FIG. 2, the imaging unit 40 is configured to sequentially image a plurality of element wafers 70 that move relative to the imaging unit 40. Specifically, the element wafer 70 is moved relative to the imaging unit 40 by the moving stage 10.

又,如圖1所示,缺陷檢查裝置100包含控制部50。此處,於本實施形態中,控制部50係以如下方式構成:將元件晶片70之檢查區域75之對應圖像(參照圖5)與預先記憶之良品之元件晶片70之圖像(參照圖4)加以比較,藉此檢測元件晶片70之缺陷90,並且判定元件晶片70為良品抑或為 不良品。再者,關於控制部50之詳細動作將於下文加以敍述。 Moreover, as shown in FIG. 1, the defect inspection apparatus 100 includes a control unit 50. Here, in this embodiment, the control unit 50 is configured as follows: the corresponding image (refer to FIG. 5) of the inspection area 75 of the component wafer 70 and the image of the good component wafer 70 (refer to the figure) stored in advance 4) Comparing, thereby detecting the defect 90 of the element wafer 70, and determining whether the element wafer 70 is good or not Defective product. Furthermore, the detailed operation of the control unit 50 will be described below.

又,缺陷檢查裝置100包含記憶部60。於記憶部60記憶有良品之元件晶片70之圖像。 In addition, the defect inspection apparatus 100 includes a storage unit 60. The image of the defective device chip 70 is stored in the memory portion 60.

(元件晶片之製造方法) (Method of manufacturing component chip)

參照圖3及圖4,對元件晶片70之製造方法進行說明。 3 and 4, the manufacturing method of the element wafer 70 will be described.

首先,如圖3所示,於包含SUS等之台部80之表面上,配置具有柔軟性之膜狀之片狀構件81。然後,於片狀構件81之表面上配置基板(晶圓)82。再者,藉由於基板(晶圓)82之表面上形成包含半導體等之元件,而構成切斷前元件晶片83。 First, as shown in FIG. 3, a flexible film-like sheet member 81 is arranged on the surface of the table portion 80 including SUS or the like. Then, a substrate (wafer) 82 is placed on the surface of the sheet member 81. Furthermore, by forming an element including a semiconductor or the like on the surface of the substrate (wafer) 82, an element wafer 83 before cutting is formed.

又,如圖4所示,元件形成於基板81之表面上之特定區域(有效區域71)。有效區域71設置有複數個,且配置為矩陣狀。再者,複數個有效區域71之間為未形成元件之區域(周緣區域72、切斷區域73)。又,有效區域71具有大致矩形形狀。 Furthermore, as shown in FIG. 4, the element is formed in a specific area (effective area 71) on the surface of the substrate 81. A plurality of effective areas 71 are provided, and they are arranged in a matrix shape. In addition, between the plurality of effective regions 71 are regions where no element is formed (peripheral region 72, cut-off region 73). In addition, the effective area 71 has a substantially rectangular shape.

然後,沿著通過鄰接之有效區域71之大致中央(切斷區域73之大致中央)之切斷線(劃線)C而將基板81切斷(切晶步驟)。藉此,如圖5所示,形成元件晶片70(70a~70d)。 Then, the substrate 81 is cut along the cutting line (scribing line) C passing through the approximate center of the adjacent effective region 71 (the approximate center of the cutting region 73) (die cutting step). Thereby, as shown in FIG. 5, the element wafer 70 (70a-70d) is formed.

於元件晶片70a(參照圖5之左上方)中,於中央部配置有形成有元件之有效區域71。又,於有效區域71之周緣(外周)配置有周緣區域72。周緣區域72係元件晶片70中之除有效區域71以外之部分。又,周緣區域72係藉由切晶步驟被切斷(切掉)之切斷區域73中未被切斷而殘留之部分。再者,元件晶片70(周緣區域72之外形)具有大致矩形形狀。 In the element wafer 70a (refer to the upper left of FIG. 5), an effective area 71 in which elements are formed is arranged in the center portion. In addition, a peripheral area 72 is arranged on the periphery (outer periphery) of the effective area 71. The peripheral area 72 is the part of the device wafer 70 excluding the effective area 71. In addition, the peripheral region 72 is a portion that is not cut but remains in the cut region 73 cut (cut off) by the dicing step. Furthermore, the element wafer 70 (outside the peripheral area 72) has a substantially rectangular shape.

又,於切晶步驟中,基板81係藉由切刀等而切斷,因此存在如元件晶片70b(參照圖5之左下方)般於周緣區域72產生缺陷90之情形。例如,產 生缺損90a(缺口)、及龜裂90b(裂痕)。再者,於元件晶片70b中,實線所示之缺損90a及龜裂90b表示未達有效區域71之例。又,虛線所示之缺損90a表示到達有效區域71之例。 In addition, in the dicing step, the substrate 81 is cut by a dicing knife or the like, so there are cases where a defect 90 is generated in the peripheral region 72 like the element wafer 70b (see the lower left in FIG. 5). For example, produce Health defect 90a (nick), and crack 90b (crack). Furthermore, in the device wafer 70b, the defect 90a and the crack 90b shown by the solid line represent an example of not reaching the effective area 71. In addition, the defect 90a shown by the broken line represents an example of reaching the effective area 71.

又,雖基板81係沿著切斷線C而切斷,但存在由於切晶裝置之精度而導致元件晶片70之切斷位置有所偏差之情形。因此,存在沿著大致矩形形狀之有效區域71之各邊而設置之周緣區域72之寬度互不相同之情形。例如,於元件晶片70c(參照圖5之右上方)中,周緣區域72中配置於有效區域71之Y2方向側之部分72b之沿著Y方向的寬度W2大於配置於有效區域71之Y1方向側之部分72a之沿著Y方向的寬度W1。即,寬度W2大於被準確切斷之周緣區域72之寬度W3(參照元件晶片70a、圖5之左上方)。又,於元件晶片70c中,表示於周緣區域72產生缺損90a及龜裂90b之例。又,元件晶片70c之缺損90a及龜裂90b未達有效區域71。 In addition, although the substrate 81 is cut along the cutting line C, the cutting position of the element wafer 70 may deviate due to the accuracy of the dicing device. Therefore, there are cases in which the widths of the peripheral regions 72 provided along the sides of the substantially rectangular effective region 71 are different from each other. For example, in the element wafer 70c (refer to the upper right of FIG. 5), the portion 72b of the peripheral region 72 arranged on the Y2 direction side of the effective area 71 has a width W2 along the Y direction larger than that of the effective area 71 on the Y1 direction side The width W1 of the portion 72a along the Y direction. That is, the width W2 is larger than the width W3 of the peripheral region 72 that is accurately cut (refer to the element wafer 70a, the upper left of FIG. 5). In addition, in the element wafer 70c, an example in which a defect 90a and a crack 90b are generated in the peripheral region 72 is shown. In addition, the defect 90a and the crack 90b of the element wafer 70c do not reach the effective area 71.

又,於元件晶片70d(參照圖5之右下方)中,周緣區域72中配置於有效區域71之Y1方向側之部分72c之沿著Y方向的寬度W4小於配置於有效區域71之Y2方向側之部分72d之沿著Y方向的寬度W5。即,寬度W4小於被準確切斷之周緣區域72之寬度W3(參照元件晶片70a、圖5之左上方)。 In addition, in the element wafer 70d (refer to the lower right of FIG. 5), the width W4 along the Y direction of the portion 72c arranged on the Y1 direction side of the effective area 71 in the peripheral region 72 is smaller than the Y2 direction side arranged on the effective area 71 The width W5 of the portion 72d along the Y direction. That is, the width W4 is smaller than the width W3 of the peripheral region 72 that is accurately cut (refer to the element wafer 70a, the upper left of FIG. 5).

繼而,於切晶步驟後,擴張片狀構件81,藉此使各元件晶片70間之間隔擴大(擴張步驟)。 Then, after the dicing step, the sheet member 81 is expanded, thereby expanding the interval between the element wafers 70 (expansion step).

(良品之元件晶片之圖像) (Image of good product component chip)

其次,參照圖4,對與成為檢查對象之元件晶片70進行比較之良品之元件晶片70之圖像進行說明。 Next, referring to FIG. 4, an image of a good component wafer 70 to be compared with the component wafer 70 to be inspected will be described.

此處,於本實施形態中,良品之元件晶片70之圖像係切斷前之切斷前元件晶片83之、與1個元件晶片70對應之部分之圖像(圖4之粗虛線所包 圍之元件晶片70之圖像);上述切斷前元件晶片83包括複數個有效區域71、及設置於複數個有效區域71之間而包含周緣區域72之切斷區域73,上述1個元件晶片70於有效區域71及周緣區域72兩者中至少包含周緣區域72(於本實施形態中包含有效區域71及周緣區域72兩者)。即,良品之元件晶片70之圖像係切晶步驟之前之切斷前元件晶片83之圖像。具體而言,切斷前元件晶片83包含複數個有效區域71、及有效區域71之間之切斷區域73(周緣區域72)。而且,良品之元件晶片70之圖像係與包含1個有效區域71、及包圍該有效區域71外周之切斷區域73(具有寬度W5之切斷區域73)之1個元件晶片70對應之部分之圖像。即,良品之元件晶片70之圖像之周緣區域72係自良品之元件晶片70之圖像中所包含之有效區域71至鄰接之有效區域71為止之區域。即,良品之元件晶片70之圖像之周緣區域72係周緣區域72所能達到之寬度中最大之寬度。 Here, in this embodiment, the image of the defective element wafer 70 is the image of the part corresponding to one element wafer 70 of the element wafer 83 before cutting before cutting (the thick dashed line in FIG. 4 encloses The image of the surrounding element wafer 70); the above-mentioned element wafer 83 before cutting includes a plurality of effective areas 71, and a cutting area 73 disposed between the plurality of effective areas 71 and including the peripheral area 72, the above-mentioned one element wafer 70 includes at least a peripheral area 72 in both the effective area 71 and the peripheral area 72 (in this embodiment, both the effective area 71 and the peripheral area 72 are included). That is, the image of the good device wafer 70 is the image of the device wafer 83 before cutting before the dicing step. Specifically, the element wafer 83 before cutting includes a plurality of effective regions 71 and a cutting region 73 (peripheral region 72) between the effective regions 71. In addition, the image of the good component wafer 70 is the part corresponding to one component wafer 70 including one effective area 71 and a cut area 73 (cutting area 73 having a width W5) surrounding the effective area 71 Of the image. That is, the peripheral area 72 of the image of the good device chip 70 is an area from the effective area 71 included in the image of the good device chip 70 to the adjacent effective area 71. That is, the peripheral area 72 of the image of the good device wafer 70 is the largest width among the widths that the peripheral area 72 can reach.

(缺陷檢查裝置之檢查前之動作) (Action before inspection of defect inspection device)

其次,參照圖6~圖8,對缺陷檢查裝置100(控制部50)之檢查前之動作進行說明。 Next, referring to FIGS. 6 to 8, the operation before the inspection of the defect inspection device 100 (control section 50) will be described.

<切斷前元件晶片之搬送> <Transfer of Component Wafer Before Cutting>

首先,如圖6所示,於步驟S1中,將切斷前元件晶片83自特定位置搬送至缺陷檢查裝置100之載置台30上(參照圖1)。 First, as shown in FIG. 6, in step S1, the element wafer 83 before cutting is transported from a specific position to the mounting table 30 of the defect inspection apparatus 100 (refer to FIG. 1).

<全域對準> <Global alignment>

繼而,於步驟S2中,進行切斷前元件晶片83之全域對準。即,決定切斷前元件晶片83之角度及中心位置。 Then, in step S2, the global alignment of the element wafer 83 before cutting is performed. That is, the angle and center position of the element wafer 83 before cutting are determined.

<良品之元件晶片之圖像之製作準備> <Preparation for the production of the image of the component chip of the good product>

繼而,於步驟S3中,進行良品之元件晶片70之圖像之製作。具體而 言,如圖7所示,於步驟S31中,藉由攝像部40,而拍攝切斷前元件晶片83整體。繼而,於步驟S32中,設定切斷前元件晶片83整體之圖像之有效區域71。 Then, in step S3, an image of the defective device wafer 70 is produced. Specific and In other words, as shown in FIG. 7, in step S31, the imaging unit 40 images the entire element wafer 83 before cutting. Then, in step S32, the effective area 71 of the image of the entire element wafer 83 before cutting is set.

繼而,於步驟S33中,設定禁止進入區域。再者,所謂禁止進入區域係與有效區域71大致相同之區域,且係絕不可容缺陷90進入之區域。即,於禁止進入區域侵入有缺陷90之元件晶片70為不良品。 Then, in step S33, an entry prohibited area is set. Furthermore, the so-called forbidden area is an area that is approximately the same as the effective area 71, and is an area where the defect 90 must not be allowed to enter. That is, the device wafer 70 with the defect 90 intruding into the forbidden area is a defective product.

繼而,於步驟S34中,設定周緣區域72(切斷區域73)。 Then, in step S34, the peripheral region 72 (cutting region 73) is set.

繼而,於步驟S35中,設定用以檢測有效區域71(禁止進入區域)之、有效區域71內之元件等之對準標記。繼而,於步驟S36中,設定並保存檢測周緣區域72之外側之邊緣74之參數、及其他參數。 Then, in step S35, an alignment mark for detecting the effective area 71 (no entry area), the components in the effective area 71, and the like is set. Then, in step S36, the parameters for detecting the edge 74 outside the peripheral region 72 and other parameters are set and saved.

<良品之元件晶片之圖像之製作> <Production of the image of the component chip of the good product>

繼而,如圖6所示,於步驟S4中,進行良品之元件晶片70之圖像之製作。具體而言,如圖8所示,於步驟S41中,叫出各種參數。 Then, as shown in FIG. 6, in step S4, an image of a good device wafer 70 is produced. Specifically, as shown in FIG. 8, in step S41, various parameters are called.

繼而,於步驟S42中,使攝像部40移動至切斷前元件晶片83中之目標元件晶片70(有效區域71、周緣區域72)之上方。繼而,於步驟S43中,拍攝目標元件晶片70(有效區域71、周緣區域72)。 Then, in step S42, the imaging unit 40 is moved to above the target element wafer 70 (effective area 71, peripheral area 72) in the element wafer 83 before cutting. Then, in step S43, the target element wafer 70 (effective area 71, peripheral area 72) is photographed.

繼而,於步驟S44中,基於所登記之有效區域71內之元件等之對準標記,而對準有效區域71及周緣區域72。具體而言,於基於對準標記檢測出有效區域71後,基於所檢測出之有效區域71之座標來檢測周緣區域72(參照具有寬度W5之周緣區域、圖4)。繼而,於步驟S45中,將有效區域71之圖像記憶於記憶部60。又,於步驟S46中,將周緣區域72之圖像記憶於記憶部60。再者,步驟S42~S46係以與目標元件晶片70(有效區域71、周緣區域72)之個數相等之次數反覆進行。 Then, in step S44, the effective area 71 and the peripheral area 72 are aligned based on the alignment marks of the components and the like in the registered effective area 71. Specifically, after the effective area 71 is detected based on the alignment mark, the peripheral area 72 is detected based on the coordinates of the detected effective area 71 (refer to the peripheral area having the width W5, FIG. 4). Then, in step S45, the image of the effective area 71 is stored in the storage unit 60. In addition, in step S46, the image of the peripheral region 72 is stored in the memory unit 60. Furthermore, steps S42 to S46 are repeated as many times as the number of target device wafers 70 (effective area 71, peripheral area 72).

繼而,於步驟S47中,製作良品之有效區域71之圖像。具體而言,將於步驟S42~S46中複數個被記憶之有效區域71之圖像之各者之每一像素的亮度平均。繼而,藉由以平均之亮度構成之像素,製作良品之有效區域71之圖像。 Then, in step S47, an image of the effective area 71 of the good product is produced. Specifically, the brightness of each pixel of each of the plurality of memorized images of the effective area 71 in steps S42 to S46 is averaged. Then, an image of the effective area 71 of the good product is produced by pixels composed of average brightness.

繼而,於步驟S48中,製作良品之周緣區域72之圖像。具體而言,將於步驟S42~S46中記憶之複數個周緣區域72之圖像各自之每一像素的亮度平均。繼而,藉由以平均之亮度構成之像素,製作良品之周緣區域72之圖像。 Then, in step S48, an image of the peripheral area 72 of the good product is produced. Specifically, the brightness of each pixel of each of the images of the plurality of peripheral regions 72 memorized in steps S42 to S46 is averaged. Then, an image of the peripheral area 72 of the good product is produced by pixels composed of average brightness.

繼而,於步驟S49中,將良品之有效區域71之圖像、及良品之周緣區域72之圖像作為良品之元件晶片70之圖像而保存於記憶部60。 Then, in step S49, the image of the effective area 71 of the good product and the image of the peripheral area 72 of the good product are stored in the memory 60 as the image of the device chip 70 of the good product.

繼而,如圖6所示,於步驟S5中,將切斷前元件晶片83收納於特定位置。 Then, as shown in FIG. 6, in step S5, the element wafer 83 before cutting is accommodated in a specific position.

(缺陷檢查裝置之檢查時之動作) (Action during inspection of defect inspection device)

其次,參照圖9~圖11,對缺陷檢查裝置100(控制部50)之檢查時之動作進行說明。再者,控制部50係申請專利範圍之「邊緣檢測部」、「有效區域檢測部」、「檢查區域決定部」、「缺陷檢測部」、「缺陷種類判別部」及「良品判定部」之一例。 Next, referring to FIGS. 9 to 11, the operation of the defect inspection apparatus 100 (control section 50) during inspection will be described. Furthermore, the control unit 50 is one of the "edge detection unit", "effective area detection unit", "inspection area determination unit", "defect detection unit", "defect type discrimination unit", and "good product determination unit" in the scope of the patent application. An example.

<元件晶片之搬送> <Transfer of Component Wafer>

首先,如圖9所示,於步驟S11中,將成為檢查對象之元件晶片70(切晶步驟後、或擴張步驟後之元件晶片70)自特定位置搬送至缺陷檢查裝置100之載置台30上(參照圖1)。 First, as shown in FIG. 9, in step S11, the component wafer 70 (the component wafer 70 after the dicing step or the expansion step) to be inspected is transported from a specific position to the mounting table 30 of the defect inspection apparatus 100 (Refer to Figure 1).

<全域對準> <Global alignment>

繼而,於步驟S12中,進行元件晶片70之全域對準。即,決定元件晶 片70之角度及中心位置。 Then, in step S12, the global alignment of the device wafer 70 is performed. That is, determine the element crystal The angle and center position of the sheet 70.

<元件晶片之檢查> <Inspection of Component Chip>

繼而,於步驟S13中,進行元件晶片70之檢查。具體而言,如圖10所示,於步驟S131中,叫出各種參數。 Then, in step S13, the device wafer 70 is inspected. Specifically, as shown in FIG. 10, in step S131, various parameters are called.

繼而,於步驟S132中,讀出良品之有效區域71之圖像。又,於步驟S133中,讀出良品之周緣區域72之圖像。 Then, in step S132, the image of the effective area 71 of the good product is read. Furthermore, in step S133, the image of the peripheral area 72 of the good product is read.

繼而,於步驟S134中,使攝像部40移動至成為檢查對象之元件晶片70之上方。繼而,於步驟S135中,藉由攝像部40,而拍攝成為檢查對象之元件晶片70。 Then, in step S134, the imaging unit 40 is moved above the element wafer 70 to be inspected. Then, in step S135, the device wafer 70 to be inspected is photographed by the imaging unit 40.

繼而,於步驟S136中,基於所登記之有效區域71內之元件等之對準標記,而對準成為檢查對象之元件晶片70之有效區域71。即,於本實施形態中,將周緣區域72及有效區域71作為用以檢查元件晶片70之缺陷之檢查區域75。 Then, in step S136, the effective area 71 of the element wafer 70 to be inspected is aligned based on the alignment mark of the element or the like in the registered effective area 71. That is, in this embodiment, the peripheral area 72 and the effective area 71 are used as the inspection area 75 for inspecting the defect of the element wafer 70.

繼而,於步驟S137中,進行有效區域71之檢查。具體而言,將良品之有效區域71之圖像之每一像素的亮度與成為檢查對象之元件晶片70之有效區域71之圖像之每一像素的亮度加以比較。 Then, in step S137, the effective area 71 is checked. Specifically, the brightness of each pixel of the image of the effective area 71 of the good product is compared with the brightness of each pixel of the image of the effective area 71 of the element wafer 70 to be inspected.

繼而,於步驟S138中,進行周緣區域72之檢查。具體而言,如圖11所示,於本實施形態中,於步驟S141中,基於由攝像部40拍攝所得之元件晶片70之圖像,檢測元件晶片70之周緣區域72之外側之邊緣74(參照圖5)。具體而言,求出圖像之每一像素之亮度。繼而,於像素中,沿著X方向(及Y方向)掃描亮度,而檢測出亮度急遽變化之像素附近作為元件晶片70之周緣區域72之外側之邊緣74。 Then, in step S138, the peripheral region 72 is inspected. Specifically, as shown in FIG. 11, in the present embodiment, in step S141, based on the image of the element wafer 70 captured by the imaging unit 40, the edge 74 outside the peripheral region 72 of the element wafer 70 is detected ( Refer to Figure 5). Specifically, find the brightness of each pixel of the image. Then, in the pixel, the brightness is scanned along the X direction (and the Y direction), and the vicinity of the pixel whose brightness changes rapidly is detected as the edge 74 outside the peripheral area 72 of the element wafer 70.

繼而,於步驟S142中,除去於步驟S141中檢測出之邊緣74之雜訊。 具體而言,於切晶步驟後之元件晶片70中,存在於邊緣74附近產生缺損90a或龜裂90b之情形。於此情形時,所檢測出之邊緣74於缺損90a或龜裂90b之部分不成為直線狀。因此,將缺損90a或龜裂90b之部分自邊緣74之資料除去。繼而,於步驟S143中,根據除去雜訊後之邊緣74之資料,以邊緣74成為大致直線狀之方式,再次檢測邊緣74。 Then, in step S142, the noise of the edge 74 detected in step S141 is removed. Specifically, in the device wafer 70 after the dicing step, a defect 90a or a crack 90b may be generated near the edge 74. In this case, the detected edge 74 does not become a straight line at the defect 90a or crack 90b. Therefore, the part of the defect 90a or the crack 90b is removed from the data of the edge 74. Then, in step S143, based on the data of the edge 74 after the noise is removed, the edge 74 is detected again so that the edge 74 becomes a substantially linear shape.

繼而,於本實施形態中,基於所檢測出之周緣區域72之外側之邊緣74及有效區域71,決定用以檢查元件晶片70之缺陷之檢查區域75。例如,將較於像素中檢測出之元件晶片70之周緣區域72之外側之邊緣74的像素向內側靠2或3像素之像素決定為檢查區域75(參照圖5)。 Then, in this embodiment, the inspection area 75 for inspecting the defect of the element wafer 70 is determined based on the edge 74 and the effective area 71 outside the peripheral area 72 that are detected. For example, pixels that are 2 or 3 pixels inward from the edge 74 outside the peripheral region 72 of the element wafer 70 detected among the pixels are determined as the inspection region 75 (see FIG. 5).

藉由如此地基於元件晶片70之周緣區域72之外側之邊緣74來決定檢查區域75,即便於如圖5(參照右上方)所示之元件晶片70c般周緣區域72之部分72b之寬度W2較大之情形時,元件晶片70c之大致整個區域亦均成為檢查區域75。即,如檢查區域75a固定之情形(參照圖5之虛線)般周緣區域72之部分72b之Y2方向側之端部成為檢查區域75外之情況得到抑制。即,缺損90a及龜裂90b之部分亦成為檢查區域75內。 By thus determining the inspection area 75 based on the edge 74 outside the peripheral area 72 of the element wafer 70, the width W2 of the portion 72b of the peripheral area 72 of the element wafer 70c as shown in FIG. 5 (refer to the upper right) In the larger case, substantially the entire area of the element wafer 70c also becomes the inspection area 75. That is, as in the case where the inspection area 75a is fixed (refer to the dashed line in FIG. 5), the end of the portion 72b of the peripheral area 72 on the Y2 direction side is suppressed from being outside the inspection area 75. That is, the parts of the defect 90a and the crack 90b also become the inspection area 75.

又,即便於如圖5(參照右下方)所示之元件晶片70d般周緣區域72之部分72c之寬度W4較小之情形時,元件晶片70d之大致整個區域亦成為檢查區域75。即,如檢查區域75a為固定之情形(參照圖5之虛線)般超出周緣區域72之部分72c之Y1方向側之端部(邊緣74)的部分包含於檢查區域75之情況得到抑制。 Moreover, even when the width W4 of the portion 72c of the peripheral area 72 of the element wafer 70d as shown in FIG. 5 (see the lower right) is small, the substantially entire area of the element wafer 70d becomes the inspection area 75. That is, as in the case where the inspection area 75a is fixed (refer to the dashed line in FIG. 5), the portion beyond the Y1 direction side end (edge 74) of the portion 72c of the peripheral area 72 is suppressed from being included in the inspection area 75.

繼而,於步驟S144中,進行缺陷90之檢測。具體而言,將良品之周緣區域72之圖像之每一像素的亮度與成為檢查對象之元件晶片70之周緣區域72之圖像之每一像素的亮度加以比較。然後,檢測元件晶片70之缺 陷90。例如,算出良品之周緣區域72之圖像之每一像素的亮度與成為檢查對象之元件晶片70之圖像之每一像素的亮度之差,若該差(絕對值)大於特定閾值,則判定為缺陷90。再者,亦檢測缺陷90之位置(座標)。 Then, in step S144, the defect 90 is detected. Specifically, the brightness of each pixel of the image of the peripheral region 72 of the good product is compared with the brightness of each pixel of the image of the peripheral region 72 of the element wafer 70 to be inspected. Then, the defect of the element chip 70 is detected Trapped 90. For example, calculate the difference between the brightness of each pixel of the image of the peripheral area 72 of the good product and the brightness of each pixel of the image of the device wafer 70 to be inspected, and if the difference (absolute value) is greater than a certain threshold, it is determined For defect 90. Furthermore, the position (coordinates) of the defect 90 is also detected.

此處,存在良品之元件晶片70之圖像與成為檢查對象之元件晶片70之圖像大小互不相同之情形。另一方面,於良品之元件晶片70之圖像與成為檢查對象之元件晶片70之圖像中,兩者之有效區域71之大小大致相同。即,周緣區域72互不相同。因此,於成為檢查對象之元件晶片70之圖像中,以有效區域71為基準而檢測周緣區域72之大小(範圍),並以與該大小(範圍)對應之方式,決定良品之元件晶片70之圖像中之周緣區域72之大小(範圍)。藉此,能夠使良品之元件晶片70之圖像之大小與成為檢查對象之元件晶片70之圖像之大小相對應。 Here, the size of the image of the defective element wafer 70 and the image of the element wafer 70 to be inspected may be different from each other. On the other hand, in the image of the defective element wafer 70 and the image of the element wafer 70 to be inspected, the size of the effective area 71 of the two is approximately the same. That is, the peripheral regions 72 are different from each other. Therefore, in the image of the component wafer 70 to be inspected, the size (range) of the peripheral area 72 is detected based on the effective area 71, and a good component wafer 70 is determined in a manner corresponding to the size (range) The size (range) of the peripheral area 72 in the image. Thereby, it is possible to make the size of the image of the good component wafer 70 correspond to the size of the image of the component wafer 70 to be inspected.

繼而,於步驟S145中,判斷所檢測出之缺陷90是否已進入至禁止進入區域(有效區域71)。又,判斷所檢測出之缺陷90是否涉及邊緣74(是否自邊緣74延伸)。 Then, in step S145, it is determined whether the detected defect 90 has entered the no-entry area (effective area 71). Furthermore, it is determined whether the detected defect 90 involves the edge 74 (whether it extends from the edge 74).

繼而,於步驟S146中,基於所檢測出之缺陷90之形狀(長度、縱橫比、面積、亮度等),判別缺陷90之種類。例如,基於所檢測出之缺陷90之形狀,判別是否為缺損90a、或是否為龜裂90b。 Then, in step S146, the type of the defect 90 is determined based on the shape (length, aspect ratio, area, brightness, etc.) of the detected defect 90. For example, based on the shape of the detected defect 90, it is judged whether it is a defect 90a or whether it is a crack 90b.

此處,於本實施形態中,於判別出缺陷90為元件晶片70之缺損90a之情形時,若缺損90a(自邊緣74延伸之缺損90a)到達有效區域71(圖5左下方之元件晶片70b之虛線所示之缺損90a),則判定元件晶片70為不良品。另一方面,若缺損90a未達有效區域71(圖5左下方之元件晶片70b之實線所示之缺損90a、圖5右上方之元件晶片70c之缺損90a),則將元件晶片70判定為良品。其原因在於:未達有效區域71之缺損90a未來發展至有效區域71 之可能性較小。 Here, in the present embodiment, when it is determined that the defect 90 is the defect 90a of the device chip 70, if the defect 90a (the defect 90a extending from the edge 74) reaches the effective area 71 (the device chip 70b at the bottom left of FIG. 5) If the defect 90a) is shown by the dotted line, the device chip 70 is judged to be defective. On the other hand, if the defect 90a does not reach the effective area 71 (the defect 90a shown by the solid line of the element wafer 70b at the bottom left of FIG. 5, and the defect 90a of the element wafer 70c at the upper right of FIG. 5), the element wafer 70 is judged to be Good product. The reason is that the defect 90a that does not reach the effective area 71 will develop to the effective area 71 in the future. It is less likely.

又,於本實施形態中,於判別出缺陷90為元件晶片70之龜裂90b之情形時,無論龜裂90b(自邊緣74延伸之龜裂90b)是否到達有效區域71,均判定元件晶片70為不良品。即,圖5左下方之元件晶片70b及圖5右上方之元件晶片70c因產生龜裂90b,而被判定為不良品。其原因在於:儘管龜裂90b未達有效區域71,但龜裂90b未來發展至有效區域71之可能性較高。 Furthermore, in this embodiment, when it is determined that the defect 90 is the crack 90b of the element wafer 70, whether the crack 90b (crack 90b extending from the edge 74) reaches the effective area 71, it is determined that the element wafer 70 It is a defective product. That is, the element wafer 70b at the lower left in FIG. 5 and the element wafer 70c at the upper right in FIG. 5 were determined to be defective due to the occurrence of a crack 90b. The reason is that although the crack 90b does not reach the effective area 71, the possibility of the crack 90b developing to the effective area 71 in the future is higher.

又,圖5右下方之元件晶片70d雖然周緣區域72之Y1方向側之部分72c以寬度W4變小之方式被切斷但未產生缺陷90,故而被判定為良品。 In addition, although the part 72c of the peripheral region 72 on the Y1 direction side of the element wafer 70d in the lower right of FIG. 5 was cut so that the width W4 was reduced, the defect 90 did not occur, so it was judged to be a good product.

再者,於缺陷90未自邊緣74延伸之情形時,判定元件晶片70為良品。即,將缺陷90判別為元件晶片70上之異物。 Furthermore, when the defect 90 does not extend from the edge 74, it is determined that the device wafer 70 is a good product. That is, the defect 90 is discriminated as a foreign matter on the element wafer 70.

再者,步驟S134~步驟S138係以與成為檢查對象之元件晶片70之個數相等之次數反覆進行。繼而,於步驟S139中,將檢查結果保存於記憶部60。 Furthermore, steps S134 to S138 are repeated as many times as the number of element wafers 70 to be inspected. Then, in step S139, the inspection result is stored in the storage unit 60.

最後,如圖9所示,於步驟S15中,將元件晶片70收納於特定位置。 Finally, as shown in FIG. 9, in step S15, the element wafer 70 is stored in a specific position.

(本實施形態之效果) (Effects of this embodiment)

其次,對本實施形態之效果進行說明。 Next, the effect of this embodiment will be explained.

於本實施形態中,如上所述,包含控制部50,其基於所檢測出之周緣區域72之外側之邊緣74及有效區域71,決定用以檢查元件晶片70之缺陷90之檢查區域75。藉此,能夠使檢查區域75與元件晶片70之周緣區域72之外側之邊緣74(元件晶片70之大小)相對應地變化,故而與檢查區域75固定之情形時不同,能夠抑制缺陷90之漏檢。又,藉由使檢查區域75與元件晶片70之大小相對應地變化,即便於元件晶片70之端部被切斷之情形時,被切斷部分亦成為檢查區域75外。藉此,能夠抑制因端部被切斷後 之元件晶片70之圖像與預先所記憶之良品之元件晶片70之圖像不同而引起之缺陷90誤檢。如此,能夠抑制缺陷90之漏檢、或缺陷90之誤檢。 In this embodiment, as described above, the control unit 50 includes the control unit 50 that determines the inspection area 75 for inspecting the defect 90 of the element wafer 70 based on the edge 74 and the effective area 71 outside the peripheral area 72 that are detected. Thereby, the inspection area 75 can be changed correspondingly to the edge 74 (the size of the element wafer 70) outside the peripheral area 72 of the element wafer 70. Therefore, unlike the case where the inspection area 75 is fixed, the leakage of the defect 90 can be suppressed. Check. Furthermore, by changing the inspection area 75 corresponding to the size of the element wafer 70, even when the end of the element wafer 70 is cut, the cut portion becomes outside the inspection area 75. In this way, it is possible to prevent the end portion from being cut The image of the device chip 70 is different from the image of the good device chip 70 memorized in advance, which causes the defect 90 to be misdetected. In this way, the missed detection of the defect 90 or the false detection of the defect 90 can be suppressed.

又,於本實施形態中,如上所述,良品之元件晶片70之圖像係切斷前之切斷前元件晶片83之、與1個元件晶片70對應之部分之圖像;上述切斷前元件晶片83包括複數個有效區域71、及設置於複數個有效區域71之間而包含周緣區域72之切斷區域73,上述1個元件晶片70於有效區域71及周緣區域72兩者中至少包含周緣區域72(於本實施形態中包含有效區域71及周緣區域72兩者)。此處,於使檢查區域75與元件晶片70之周緣區域72之外側之邊緣74(元件晶片70之大小)相對應地變化之情形時,於使用切斷後之元件晶片70之圖像作為良品之元件晶片70之圖像時,存在檢查區域75之大小(成為檢查對象之元件晶片70之大小)與切斷後之元件晶片70之大小不同之情形。於此情形時,即便將成為檢查對象之元件晶片70之檢查區域75之對應圖像與切斷後之良品之元件晶片70之圖像加以比較,亦難以準確地判斷缺陷90之有無。因此,藉由如上所述,使用切斷前之切斷前元件晶片83之、與包含有效區域71及周緣區域72之1個元件晶片70對應之部分之圖像作為良品之元件晶片70之圖像,能夠將與成為檢查對象之元件晶片70之檢查區域75之大小相對應之切斷前元件晶片83之圖像(與包含有效區域71及周緣區域72之1個元件晶片70對應之部分之圖像)用作良品之元件晶片70之圖像。其結果,能夠準確地判斷缺陷90之有無。 In addition, in this embodiment, as described above, the image of the defective element wafer 70 is the image of the part corresponding to one element wafer 70 of the element wafer 83 before cutting before cutting; The element wafer 83 includes a plurality of effective areas 71 and a cut area 73 disposed between the plurality of effective areas 71 and including the peripheral area 72. The above-mentioned one element wafer 70 includes at least both the effective area 71 and the peripheral area 72 The peripheral area 72 (in this embodiment, both the effective area 71 and the peripheral area 72 are included). Here, when the inspection area 75 is changed correspondingly to the edge 74 (the size of the element wafer 70) outside the peripheral area 72 of the element wafer 70, the image of the cut element wafer 70 is used as the good product. In the image of the element wafer 70, the size of the inspection area 75 (the size of the element wafer 70 to be inspected) may be different from the size of the element wafer 70 after cutting. In this case, even if the corresponding image of the inspection area 75 of the element wafer 70 to be inspected is compared with the image of the good element wafer 70 after cutting, it is difficult to accurately determine the presence or absence of the defect 90. Therefore, as described above, the image of the part of the element chip 83 before cutting before cutting that corresponds to one element chip 70 including the effective area 71 and the peripheral area 72 is used as the image of the good element chip 70 Image, the image of the element wafer 83 before cutting (the part corresponding to one element wafer 70 including the effective area 71 and the peripheral area 72) corresponding to the size of the inspection area 75 of the element wafer 70 to be inspected Image) is used as an image of a good device wafer 70. As a result, the presence or absence of the defect 90 can be accurately determined.

又,於使用切斷後之元件晶片70之圖像作為良品之元件晶片70之圖像之情形時,存在於切斷後之元件晶片70包含缺陷90之情形。又,於將切斷前元件晶片83切斷之情形時,存在由於切斷裝置(切晶裝置等)之精度而導致元件晶片70之切斷位置有所偏差之情形。即,於使用切斷後之元件 晶片70之圖像作為良品之元件晶片70之圖像之情形時,存在作為與成為檢查對象之元件晶片70進行比較之良品之圖像不合適之情形。因此,藉由使用切斷前元件晶片83之圖像作為良品之元件晶片70之圖像,能夠容易地獲得適當之良品之圖像。 In addition, when the image of the cut element wafer 70 is used as the image of the good element wafer 70, there is a case where the cut element wafer 70 contains a defect 90. In addition, when cutting the element wafer 83 before cutting, the cutting position of the element wafer 70 may deviate due to the accuracy of the cutting device (die cutting device, etc.). That is, after using the cut components When the image of the wafer 70 is used as the image of the good component wafer 70, there may be cases where the good product image to be compared with the component wafer 70 to be inspected is not suitable. Therefore, by using the image of the element wafer 83 before cutting as the image of the defective element wafer 70, an appropriate image of the defective product can be easily obtained.

又,於本實施形態中,如上所述,控制部50基於所檢測出之缺陷90之形狀而判別缺陷90之種類,並且基於所判別出之缺陷90之種類、及缺陷90相對於有效區域71之位置,而判定元件晶片70為良品抑或為不良品。此處,存在即便於存在缺陷90之情形時亦將元件晶片70視為良品之情形。因此,藉由基於缺陷90之種類、及缺陷90相對於有效區域71之位置來判定元件晶片70為良品抑或為不良品,能夠抑制僅因存在缺陷90便將良品之元件晶片70判定為不良品之情況。 In addition, in this embodiment, as described above, the control unit 50 determines the type of the defect 90 based on the shape of the detected defect 90, and also determines the type of the defect 90 based on the type of the determined defect 90, and the difference between the defect 90 and the effective area 71 , And determine whether the device chip 70 is a good product or a defective product. Here, even when there is a defect 90, the element wafer 70 is regarded as a good product. Therefore, by determining whether the device wafer 70 is a good product or a defective product based on the type of the defect 90 and the position of the defect 90 relative to the effective area 71, it is possible to prevent the defective device wafer 70 from being judged as a defective product only because of the defect 90. The situation.

又,於本實施形態中,如上所述,於控制部50基於缺陷90之形狀而判別出缺陷90為元件晶片70之缺損90a之情形時,若缺損90a到達有效區域71,則將元件晶片70判定為不良品,若缺損90a未達有效區域71,則將元件晶片70判定為良品。此處,缺損90a未來變大(缺損90a自周緣區域72逐漸發展至有效區域71)之可能性相對較小。因此,藉由若缺損90a未達有效區域71則將元件晶片70判定為良品,能夠抑制僅因存在缺損90a便將良品之元件晶片70判定為不良品之情況。 Furthermore, in this embodiment, as described above, when the control unit 50 determines that the defect 90 is the defect 90a of the element wafer 70 based on the shape of the defect 90, if the defect 90a reaches the effective area 71, the element wafer 70 It is judged to be a defective product, and if the defect 90a does not reach the effective area 71, the element wafer 70 is judged to be a good product. Here, the possibility that the defect 90a becomes larger in the future (the defect 90a gradually develops from the peripheral area 72 to the effective area 71) is relatively small. Therefore, by determining the device wafer 70 as a good product if the defect 90a does not reach the effective area 71, it is possible to prevent the device wafer 70 of a good product from being determined as a defective product only because of the defect 90a.

又,於本實施形態中,如上所述,於控制部50基於缺陷90之形狀而判別出缺陷90為元件晶片70之龜裂90b之情形時,無論龜裂90b是否到達有效區域71,均將元件晶片70判定為不良品。此處,龜裂90b未來變大(龜裂90b自周緣區域72逐漸發展至有效區域71)之可能性相對較大。因此,藉由無論龜裂90b是否到達有效區域71均將元件晶片70判定為不良品,能夠 預先將儘管當前為良品但未來會成為不良品之元件晶片70排除。 In addition, in this embodiment, as described above, when the control unit 50 determines that the defect 90 is the crack 90b of the element wafer 70 based on the shape of the defect 90, whether the crack 90b reaches the effective area 71 or not, it will The element wafer 70 is judged to be defective. Here, the possibility that the crack 90b becomes larger in the future (the crack 90b gradually develops from the peripheral area 72 to the effective area 71) is relatively high. Therefore, by determining the element wafer 70 as a defective product regardless of whether the crack 90b reaches the effective area 71 or not, it is possible to The component wafer 70 that is currently a good product but will become a defective product in the future is excluded in advance.

[變化例] [Change example]

再者,應認為此次所揭示之實施形態及實施例於所有方面均為例示而並非限制性者。本發明之範圍並非由上述實施形態及實施例之說明表示而由申請專利範圍表示,進而包含與申請專利範圍均等之意義及範圍內之所有變更(變化例)。 Furthermore, it should be considered that the embodiments and examples disclosed this time are illustrative and not restrictive in all respects. The scope of the present invention is shown not by the description of the above-mentioned embodiments and examples but by the scope of the patent application, and further includes all changes (variations) within the meaning and scope equivalent to the scope of the patent application.

例如,於上述實施形態中,表示了控制部進行邊緣之檢測、有效區域之檢測、檢查區域之決定、缺陷之檢測、缺陷種類之判別、及良品之判定之例,但本發明並不限於此。例如,亦可藉由控制部以外之部分,分別進行邊緣之檢測、有效區域之檢測、檢查區域之決定、缺陷之檢測、缺陷種類之判別、及良品之判定。 For example, in the above embodiment, the control unit has shown examples of edge detection, effective area detection, inspection area determination, defect detection, defect type discrimination, and good product judgment, but the present invention is not limited to this . For example, it is also possible to perform edge detection, effective area detection, inspection area determination, defect detection, defect type discrimination, and good product judgment by parts other than the control unit.

又,於上述實施形態中,表示了藉由將元件晶片之檢查區域之對應圖像(亮度)與良品之元件晶片之圖像(亮度)之差是否大於特定閾值加以比較而檢測元件晶片之缺陷之例,但本發明並不限於此。例如,亦可藉由除將亮度之差是否大於特定閾值加以比較之方法以外之方法,檢測元件晶片之缺陷。 In addition, in the above-mentioned embodiment, it is shown that the defect of the device chip is detected by comparing whether the difference between the corresponding image (brightness) of the inspection area of the device chip and the image (brightness) of the good device chip is greater than a specific threshold. However, the present invention is not limited to this. For example, methods other than the method of comparing whether the difference in brightness is greater than a specific threshold can also be used to detect defects in the device chip.

又,於上述實施形態中,表示了檢測缺損及龜裂作為缺陷之例,但本發明並不限於此。例如,亦可檢測除缺損及龜裂以外之缺陷(膜剝離等)。 In addition, in the above-mentioned embodiment, the defect and the crack are detected as an example of the defect, but the present invention is not limited to this. For example, it can also detect defects other than defects and cracks (film peeling, etc.).

又,於上述實施形態中,表示了無論龜裂是否到達有效區域均將元件晶片判定為不良品之例,但本發明並不限於此。例如,亦可為只要龜裂之延長線不涉及有效區域便將元件晶片判定為良品。 In addition, in the above-mentioned embodiment, the example in which the element wafer is judged to be defective regardless of whether the crack reaches the effective area or not is shown, but the present invention is not limited to this. For example, as long as the extension line of the crack does not involve the effective area, the device chip can be judged as a good product.

又,於上述實施形態中,表示了禁止進入區域與有效區域大致相同 之例,但本發明並不限於此。例如,亦可使禁止進入區域與有效區域不同。 In addition, in the above embodiment, it is shown that the no-entry area and the effective area are almost the same However, the present invention is not limited to this. For example, the no-entry area may be different from the effective area.

又,於上述實施形態中,表示了將有效區域與周緣區域兩者作為檢查區域之例,但本發明並不限於此。例如,亦可如圖12所示,不將有效區域171作為檢查區域,而僅將周緣區域172作為檢查區域175(圖12之斜線所示之部分)。於此情形時,良品之元件晶片之圖像成為僅包含周緣區域之切斷前的切斷前元件晶片之圖像。 In addition, in the above-mentioned embodiment, an example in which both the effective area and the peripheral area are used as the inspection area is shown, but the present invention is not limited to this. For example, as shown in FIG. 12, the effective area 171 may not be used as the inspection area, and only the peripheral area 172 may be used as the inspection area 175 (the part shown by the diagonal line in FIG. 12). In this case, the image of the good component wafer becomes the image of the component wafer before cutting before cutting including only the peripheral area.

70‧‧‧元件晶片 70‧‧‧Component chip

70a‧‧‧元件晶片 70a‧‧‧Component chip

70b‧‧‧元件晶片 70b‧‧‧Component chip

70c‧‧‧元件晶片 70c‧‧‧Component chip

70d‧‧‧元件晶片 70d‧‧‧Component chip

71‧‧‧有效區域 71‧‧‧effective area

72‧‧‧周緣區域 72‧‧‧peripheral area

72a‧‧‧配置於有效區域之Y1方向側之部分 72a‧‧‧The part on the Y1 direction side of the effective area

72b‧‧‧配置於有效區域之Y2方向側之部分 72b‧‧‧The part arranged on the Y2 direction side of the effective area

72c‧‧‧配置於有效區域之Y1方向側之部分 72c‧‧‧The part on the Y1 direction side of the effective area

72d‧‧‧配置於有效區域之Y2方向側之部分 72d‧‧‧The part on the Y2 direction side of the effective area

74‧‧‧邊緣 74‧‧‧Edge

75‧‧‧檢查區域 75‧‧‧Inspection area

75a‧‧‧檢查區域 75a‧‧‧Inspection area

90‧‧‧缺陷 90‧‧‧Defect

90a‧‧‧缺損 90a‧‧‧Defect

90b‧‧‧龜裂 90b‧‧‧Crack

W1‧‧‧寬度 W1‧‧‧Width

W2‧‧‧寬度 W2‧‧‧Width

W3‧‧‧寬度 W3‧‧‧Width

W4‧‧‧寬度 W4‧‧‧Width

W5‧‧‧寬度 W5‧‧‧Width

Claims (5)

一種缺陷檢查裝置,其包含:攝像部,其對包含形成有元件之有效區域、及設置於上述有效區域之周緣之周緣區域之元件晶片進行拍攝;邊緣檢測部,其基於由上述攝像部拍攝所得之上述元件晶片之圖像,檢測上述元件晶片之上述周緣區域之外側之邊緣;有效區域檢測部,其基於由上述攝像部拍攝所得之上述元件晶片之圖像,檢測上述元件晶片之上述有效區域;檢查區域決定部,其基於所檢測出之上述周緣區域之外側之邊緣及上述有效區域,決定用以檢查上述元件晶片之缺陷之檢查區域;及缺陷檢測部,其藉由將上述元件晶片之上述檢查區域之對應圖像與預先所記憶之良品之上述元件晶片之圖像加以比較,而檢測上述元件晶片之缺陷;其中良品之上述元件晶片之圖像係:包括複數個上述有效區域、及設置於複數個上述有效區域之間且包含上述周緣區域之切斷區域的切斷前之切斷前元件晶片中,包含上述有效區域及上述周緣區域中之至少上述周緣區域,且以與成為檢查對象之上述元件晶片之上述周緣區域之大小對應之方式而決定良品之上述元件晶片之圖像中上述周緣區域之大小的1個上述元件晶片對應之部分的圖像。 A defect inspection device, comprising: an imaging unit that photographs an element wafer including an effective area formed with an element and a peripheral area provided on the periphery of the effective area; an edge detection unit based on the imaging obtained by the imaging unit The image of the element wafer detects the edge outside the peripheral area of the element wafer; an effective area detection section detects the effective area of the element wafer based on the image of the element wafer captured by the imaging section The inspection area determination section, which determines the inspection area for inspecting the defect of the element chip based on the detected edge outside the peripheral area and the effective area; and the defect detection section, which determines the inspection area for inspecting the defect of the element chip by The corresponding image of the inspection area is compared with the image of the device chip of the good product stored in advance to detect the defect of the device chip; the image of the device chip of the good product includes a plurality of the effective areas, and The element wafer before cutting, which is disposed between the plurality of effective areas and includes the cutting area of the peripheral area, includes at least the peripheral area of the effective area and the peripheral area, and is inspected with and The corresponding method of the size of the peripheral region of the target element chip determines the image of the part corresponding to the size of the peripheral region in the image of the good-quality element chip. 如請求項1之缺陷檢查裝置,其進而包含:缺陷種類判別部,其基於所檢測出之上述缺陷之形狀,判別上述缺陷之種類;及良品判定部,其基於由上述缺陷種類判別部所判別出之上述缺陷之 種類、及上述缺陷相對於上述有效區域之位置,判定上述元件晶片為良品抑或為不良品。 For example, the defect inspection device of claim 1, which further includes: a defect type judging unit that judges the type of the defect based on the shape of the detected defect; and a good product judging unit based on the judgment of the defect type judging unit Of the above defects The type and the position of the defect relative to the effective area determine whether the device chip is a good product or a defective product. 如請求項2之缺陷檢查裝置,其以如下方式構成:於上述缺陷種類判別部基於上述缺陷之形狀而判別出上述缺陷為上述元件晶片之缺損之情形時,上述良品判定部於上述缺損到達上述有效區域之情形時將上述元件晶片判定為不良品,於上述缺損未達上述有效區域之情形時將上述元件晶片判定為良品。 For example, the defect inspection device of claim 2 is configured as follows: when the defect type determination unit determines that the defect is the defect of the element chip based on the shape of the defect, the good product determination unit reaches the above-mentioned defect In the case of the effective area, the element chip is judged to be a defective product, and in the case of the defect that does not reach the effective area, the element chip is judged to be a good product. 如請求項2之缺陷檢查裝置,其以如下方式構成:於上述缺陷種類判別部基於上述缺陷之形狀而判別出上述缺陷為上述元件晶片之龜裂之情形時,上述良品判定部無論上述龜裂是否到達上述有效區域,均將上述元件晶片判定為不良品。 For example, the defect inspection device of claim 2, which is configured as follows: when the defect type judgment unit judges that the defect is the crack of the element chip based on the shape of the defect, the good product judgment unit does not care about the crack Whether it reaches the above-mentioned effective area or not, the above-mentioned element wafer is judged as defective. 如請求項3之缺陷檢查裝置,其以如下方式構成:於上述缺陷種類判別部基於上述缺陷之形狀而判別出上述缺陷為上述元件晶片之龜裂之情形時,上述良品判定部無論上述龜裂是否到達上述有效區域,均將上述元件晶片判定為不良品。For example, the defect inspection device of claim 3 is configured as follows: when the defect type determination unit determines that the defect is a crack of the element chip based on the shape of the defect, the good product determination unit does not care about the crack Whether it reaches the above-mentioned effective area or not, the above-mentioned element wafer is judged as a defective product.
TW106101637A 2016-03-07 2017-01-18 Defect inspection device TWI726977B (en)

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