[go: up one dir, main page]

TWI723353B - Antenna and plasma processing device - Google Patents

Antenna and plasma processing device Download PDF

Info

Publication number
TWI723353B
TWI723353B TW108109115A TW108109115A TWI723353B TW I723353 B TWI723353 B TW I723353B TW 108109115 A TW108109115 A TW 108109115A TW 108109115 A TW108109115 A TW 108109115A TW I723353 B TWI723353 B TW I723353B
Authority
TW
Taiwan
Prior art keywords
antenna
electrode
ferrule
receiving member
conductor elements
Prior art date
Application number
TW108109115A
Other languages
Chinese (zh)
Other versions
TW201940015A (en
Inventor
茨木満雄
李東偉
Original Assignee
日商日新電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日新電機股份有限公司 filed Critical 日商日新電機股份有限公司
Publication of TW201940015A publication Critical patent/TW201940015A/en
Application granted granted Critical
Publication of TWI723353B publication Critical patent/TWI723353B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本發明提供一種天線以及電漿處理裝置,所述天線即便於增長天線的情形時,亦可確保導體元件及中空絕緣體之間的密封性。天線3用於流動高頻電流IR而產生電漿P,且具備:至少一對筒狀的導體元件31;中空絕緣體32,設於彼此相鄰的導體元件31之間,與該些導體元件31的內部空間連通;以及金屬密封件S,分別設於一對導體元件31及中空絕緣體32之間。The present invention provides an antenna and a plasma processing device, which can ensure the sealing performance between a conductor element and a hollow insulator even when the antenna is lengthened. The antenna 3 is used to flow a high-frequency current IR to generate plasma P, and includes: at least a pair of cylindrical conductor elements 31; a hollow insulator 32, which is provided between the conductor elements 31 adjacent to each other, and the conductor elements 31 The inner space is connected; and the metal sealing member S is respectively provided between a pair of conductor elements 31 and the hollow insulator 32.

Description

天線以及電漿處理裝置Antenna and plasma processing device

本發明是有關於一種用以流動高頻電流而產生感應耦合式電漿的天線(antenna)、以及具備所述天線的電漿處理裝置。 The present invention relates to an antenna for generating inductively coupled plasma by flowing high-frequency current, and a plasma processing device provided with the antenna.

先前以來提出有電漿處理裝置,該電漿處理裝置於天線中流動高頻電流,利用由此所產生的感應電場而產生感應耦合式電漿(簡稱ICP(Inductively Coupled Plasma)),使用該感應耦合式電漿對基板實施處理。 Previously, a plasma processing device has been proposed. The plasma processing device flows a high-frequency current in an antenna and generates an inductively coupled plasma (ICP (Inductively Coupled Plasma)) by using the induced electric field generated therefrom. The coupled plasma processes the substrate.

此種電漿處理裝置中,若為了應對大型基板等而增長天線,則該天線的阻抗(impedance)變大,由此於天線的兩端間產生大的電位差。其結果,有受到該大的電位差的影響而電漿的密度分佈、電位分佈、電子溫度分佈等電漿的均勻性變差,甚至基板處理的均勻性變差等問題。另外,若天線的阻抗變大,則亦有難以於天線中流動高頻電流的問題。 In this type of plasma processing apparatus, if the antenna is lengthened in order to cope with a large-scale substrate or the like, the impedance of the antenna increases, thereby generating a large potential difference between the two ends of the antenna. As a result, due to the influence of the large potential difference, the uniformity of the plasma such as the density distribution, potential distribution, and electron temperature distribution of the plasma deteriorates, and even the uniformity of substrate processing deteriorates. In addition, if the impedance of the antenna increases, there is also a problem that it is difficult to flow a high-frequency current through the antenna.

為了解決此種問題等,如專利文獻1所示,想到使中空絕緣體介於相鄰的金屬管間而將多個金屬管連接,並且於中空絕緣體的外周部配置作為電容元件的電容器。具體而言,將金屬管與中空絕緣體螺旋緊固,並且為了確保該些構件之間的密封性,而使橡膠製的O形環介於金屬管的外周面與中空絕緣體的內周面 之間。而且,將於中空絕緣體的兩側螺旋緊固的金屬管與所述電容元件電性串聯連接,簡單而言,由此天線的合成電抗成為由感應性電抗減去電容性電抗而得的電抗。其結果,可降低天線的阻抗,即便於增長天線的情形時亦抑制其阻抗的增大,容易於天線中流動高頻電流,可高效率地產生均勻性良好的電漿。 In order to solve such problems and the like, as shown in Patent Document 1, it is conceived that a hollow insulator is interposed between adjacent metal tubes, a plurality of metal tubes are connected, and a capacitor as a capacitive element is arranged on the outer periphery of the hollow insulator. Specifically, the metal pipe and the hollow insulator are screw-fastened, and in order to ensure the sealing performance between these members, a rubber O-ring is interposed between the outer peripheral surface of the metal pipe and the inner peripheral surface of the hollow insulator between. Furthermore, the metal pipes screwed on both sides of the hollow insulator are electrically connected in series with the capacitive element. In short, the combined reactance of the antenna becomes the reactance obtained by subtracting the capacitive reactance from the inductive reactance. As a result, the impedance of the antenna can be reduced, the increase in the impedance can be suppressed even when the antenna is lengthened, high-frequency current can easily flow through the antenna, and plasma with good uniformity can be efficiently generated.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本專利特開2016-138598號公報 Patent Document 1: Japanese Patent Laid-Open No. 2016-138598

然而,若為所述構成,則由經年劣化或熱影響等導致O形環的彈性力降低,難以長期確保密封性。 However, with such a configuration, the elastic force of the O-ring decreases due to aging deterioration or thermal influence, and it is difficult to ensure the sealing performance for a long period of time.

因此,本發明是為了解決所述問題點而成,其主要課題在於,即便於增長天線的情形時,亦可確保導體元件及中空絕緣體之間的密封性。 Therefore, the present invention is made to solve the above-mentioned problems, and its main problem is to ensure the airtightness between the conductor element and the hollow insulator even when the antenna is lengthened.

即,本發明的天線用於流動高頻電流而產生電漿,其特徵在於包括:至少一對筒狀的導體元件;中空絕緣體,設於彼此相鄰的所述導體元件之間,與該些導體元件的內部空間連通;以及金屬密封件,分別設於所述一對導體元件及所述中空絕緣體之間。 That is, the antenna of the present invention is used to flow high-frequency current to generate plasma, and is characterized by including: at least a pair of cylindrical conductor elements; a hollow insulator provided between the conductor elements adjacent to each other, and these The internal spaces of the conductor elements are in communication; and a metal seal is respectively provided between the pair of conductor elements and the hollow insulator.

若為如此構成的天線,則於一對導體元件及中空絕緣體 之間分別設有較橡膠製的O形環更為耐受經年劣化或熱影響的金屬密封件,故而即便於增長天線的情形時,亦可確保導體元件及中空絕緣體之間的密封性。 If it is an antenna constructed in this way, a pair of conductor elements and a hollow insulator There are metal seals between the rubber O-rings that are more resistant to years of deterioration or thermal influence, so even when the antenna is lengthened, the airtightness between the conductor element and the hollow insulator can be ensured.

若中空絕緣體包含例如強度較樹脂等金屬密封件更弱的材質,則即便欲壓潰金屬密封件而中空絕緣體亦變形,密封性變差。 If the hollow insulator contains, for example, a material weaker than a metal seal such as a resin, the hollow insulator will deform even if the metal seal is to be crushed, resulting in poor sealing performance.

因此,較佳為更具備設於所述中空絕緣體的兩端部且供所述金屬密封件接觸的承接構件,所述承接構件包含強度較所述中空絕緣體更強的材質。 Therefore, it is preferable to further include a receiving member provided at both ends of the hollow insulator and contacted by the metal seal, and the receiving member includes a stronger material than the hollow insulator.

若為此種構成,則強度包含較中空絕緣體更強的材質的承接構件承接金屬密封件,故而可抑制中空絕緣體的變形並且可靠地壓潰金屬密封件。 With this configuration, the receiving member containing a stronger material than the hollow insulator receives the metal seal, so that deformation of the hollow insulator can be suppressed and the metal seal can be crushed reliably.

較佳為更具備與所述一對導體元件電性串聯連接的電容元件,所述電容元件具有:第一電極,與所述一對導體元件的其中一者電性連接,並且穿過所述中空絕緣體的內部而延伸至所述一對導體元件的另一者側;及第二電極,與所述一對導體元件的另一者電性連接,並且穿過所述中空絕緣體的內部而延伸至所述一對導體元件的其中一者側,與所述第一電極相向,所述第一電極設於其中一個所述承接構件,所述第二電極設於另一個所述承接構件。 Preferably, it further includes a capacitor element electrically connected in series with the pair of conductor elements, and the capacitor element has: a first electrode electrically connected to one of the pair of conductor elements and passing through the The inside of the hollow insulator extends to the other side of the pair of conductor elements; and the second electrode is electrically connected to the other of the pair of conductor elements and extends through the inside of the hollow insulator To one side of the pair of conductor elements facing the first electrode, the first electrode is provided on one of the receiving members, and the second electrode is provided on the other of the receiving members.

若為此種構成,則電容元件與一對導體元件電性串聯連接,故而如上文所述,可使天線的合成電抗成為由感應性電抗減去電 容性電抗的形式。其結果,可降低天線的阻抗,即便於增長天線的情形時亦抑制其阻抗的增大,容易於天線中流動高頻電流,可高效率地產生均勻性良好的電漿。 With this configuration, the capacitive element and the pair of conductor elements are electrically connected in series. Therefore, as described above, the combined reactance of the antenna can be reduced by the inductive reactance minus the electrical reactance. The form of capacitive reactance. As a result, the impedance of the antenna can be reduced, the increase in the impedance can be suppressed even when the antenna is lengthened, high-frequency current can easily flow through the antenna, and plasma with good uniformity can be efficiently generated.

而且,第一電極及第二電極分別設於承接構件,故而若將承接構件安裝於中空絕緣體則可使第一電極與第二電極相向,而可簡單地形成電容元件。 Furthermore, the first electrode and the second electrode are respectively provided on the receiving member. Therefore, if the receiving member is mounted on the hollow insulator, the first electrode and the second electrode can be opposed to each other, and the capacitor element can be easily formed.

於將承接構件可裝卸地設於中空絕緣體的情形時,每當將承接構件安裝於中空絕緣體時,第一電極及第二電極的相對位置關係可能改變,故而電容元件的靜電電容的再現性差。 When the receiving member is detachably provided on the hollow insulator, the relative positional relationship between the first electrode and the second electrode may change every time the receiving member is mounted on the hollow insulator, so the reproducibility of the capacitance of the capacitor element is poor.

因此,較佳為所述承接構件焊接於所述中空絕緣體。 Therefore, it is preferable that the receiving member is welded to the hollow insulator.

若如此,則承接構件與中空絕緣體經一體化,故而不會導致靜電電容的再現性的降低。而且,將承接構件與中空絕緣體焊接,故而無需於該些構件之間設置密封件,從而可減少零件數。 If so, the receiving member and the hollow insulator are integrated, so that the reproducibility of the electrostatic capacitance is not reduced. Moreover, the receiving member and the hollow insulator are welded, so there is no need to provide a seal between these members, so that the number of parts can be reduced.

作為所述金屬密封件的具體構成,較佳為具有:第一套圈(ferrule),接觸所述承接構件;第二套圈,配置於較所述第一套圈更靠所述導體元件側;及壓入構件,將所述第二套圈沿軸向而向所述第一套圈側壓入,並且螺合於所述承接構件。 As a specific structure of the metal seal, it is preferable to have: a first ferrule (ferrule), which contacts the receiving member; and a second ferrule, which is arranged closer to the conductor element side than the first ferrule And a press-fitting member, which presses the second ferrule toward the first ferrule side in the axial direction, and is screwed to the receiving member.

若為此種構成,則可將承接構件與第一套圈之間進行面密封,故而與例如使用金屬製的墊圈(gasket)或金屬製的O形環作為金屬密封件的軸密封相比,密封性更良好。 With such a configuration, it is possible to perform a surface seal between the receiving member and the first ferrule. Therefore, compared with a shaft seal that uses a metal gasket or a metal O-ring as a metal seal, for example, The tightness is better.

所述電容元件的介電質較佳為將所述第一電極及所述第二電極之間的空間充滿的液體。 The dielectric of the capacitor element is preferably a liquid that fills the space between the first electrode and the second electrode.

若為此種構成,則利用液體的介電質將第一電極及第二電極之間的空間充滿,故而可消除構成電容元件的電極及介電質之間產生的間隙。其結果,可消除於電極及介電質之間的間隙中可能產生的電弧放電,從而消除由電弧放電引起的電容元件的破損。另外,可不考慮間隙而由第一電極及第二電極的距離、相向面積及液體的介電質的相對介電常數來高精度地設定電容值。進而,亦可不需要用以填埋間隙的按壓電極及介電質的結構,從而可防止由該按壓結構導致的天線周邊結構的複雜化及由此產生的電漿均勻性的劣化。 With this configuration, the space between the first electrode and the second electrode is filled with the dielectric substance of the liquid, so the gap between the electrode and the dielectric substance constituting the capacitor element can be eliminated. As a result, the arc discharge that may be generated in the gap between the electrode and the dielectric substance can be eliminated, and the damage of the capacitor element caused by the arc discharge can be eliminated. In addition, regardless of the gap, the capacitance value can be set with high accuracy based on the distance between the first electrode and the second electrode, the facing area, and the relative permittivity of the dielectric substance of the liquid. Furthermore, the structure of the pressing electrode and the dielectric substance for filling the gap may not be required, so that the complication of the antenna peripheral structure caused by the pressing structure and the resulting degradation of plasma uniformity can be prevented.

所述介電質較佳為於所述一對導體元件的內部流動的冷卻液。 The dielectric substance is preferably a cooling liquid flowing inside the pair of conductor elements.

若為此種構成,則可利用冷卻液將容易因電漿生成時產生的熱而成為高溫的天線冷卻,故而可防止天線自身的破損或其周邊結構的破損等,從而可穩定地產生電漿。 With such a configuration, the cooling liquid can be used to cool the antenna, which tends to become high temperature due to the heat generated during plasma generation, so that damage to the antenna itself or damage to the surrounding structure can be prevented, and the plasma can be stably generated .

而且,由於將所述冷卻液用作電容元件的介電質,故而可將電容元件冷卻並且抑制靜電電容的意外的變動。 Furthermore, since the coolant is used as the dielectric of the capacitor element, it is possible to cool the capacitor element and suppress unexpected changes in electrostatic capacitance.

進而,藉由一邊利用調溫機構將冷卻液調整為一定溫度一邊用作介電質,可抑制由溫度變化導致的相對介電常數的變化,從而可抑制隨此產生的靜電電容的變化。 Furthermore, by using the cooling liquid as a dielectric substance while adjusting the coolant to a constant temperature by the temperature adjustment mechanism, the change in the relative permittivity caused by the temperature change can be suppressed, and the change in the electrostatic capacitance caused by this can be suppressed.

另外,本發明的電漿處理裝置的特徵在於具備:所述天線、於內部或外部配置有所述天線的真空容器、及對所述天線施加高頻電流的高頻電源。 In addition, the plasma processing apparatus of the present invention is characterized by including the antenna, a vacuum container in which the antenna is arranged inside or outside, and a high-frequency power supply that applies a high-frequency current to the antenna.

若為如此構成的電漿處理裝置,則可獲得與所述天線同樣的作用效果。 If it is the plasma processing apparatus comprised in this way, the same effect as the said antenna can be acquired.

根據如此構成的發明,即便於增長天線的情形時,亦可確保導體元件及中空絕緣體之間的密封性。 According to the invention thus constituted, even when the antenna is lengthened, the sealing property between the conductor element and the hollow insulator can be ensured.

2:真空容器 2: Vacuum container

3:天線 3: antenna

3a:供電端部 3a: Power supply end

3b:終端部 3b: Terminal

4:高頻電源 4: high frequency power supply

6:真空排氣裝置 6: Vacuum exhaust device

7:氣體 7: Gas

8:基板固持器 8: substrate holder

9:偏置電源 9: Bias power supply

10:絕緣罩 10: Insulating cover

11:絕緣構件 11: Insulating member

12、13:襯墊 12, 13: liner

14:循環流路 14: Circulating flow path

18:處理室 18: Processing room

19:介電質窗 19: Dielectric window

20:天線室 20: Antenna Room

21:氣體導入口 21: Gas inlet

31:金屬管(導體元件) 31: Metal tube (conductor element)

31A:第一金屬管 31A: The first metal tube

31B:第二金屬管 31B: second metal tube

31t:端部 31t: end

31x、32x:流路 31x, 32x: flow path

32:絕緣管(中空絕緣體) 32: Insulating tube (hollow insulator)

33:電容器 33: Capacitor

33A:第一電極 33A: first electrode

33B:第二電極 33B: second electrode

33x:主流路 33x: Mainstream road

41:匹配電路 41: matching circuit

81:加熱器 81: heater

100:電漿處理裝置 100: Plasma processing device

141:調溫機構 141: Thermostat

142:循環機構 142: Circulation Mechanism

321:埋頭孔部 321: Countersink

CL:冷卻液(液體的介電質) CL: Coolant (liquid dielectric)

F:凸緣 F: flange

IR:高頻電流 IR: high frequency current

N1:外螺紋部 N1: External thread

N2:內螺紋部 N2: Internal thread

P:感應耦合式電漿 P: Inductively coupled plasma

S:金屬密封件 S: Metal seal

S1:第一套圈 S1: The first ring

S1a、S2a:前端部 S1a, S2a: Front end

S1b、S2b:後端部 S1b, S2b: rear end

S2:第二套圈 S2: Second ring

S21、S31:前側內周面 S21, S31: front inner peripheral surface

S22、S32:後側內周面 S22, S32: Rear inner peripheral surface

S23:環狀突出部 S23: Ring protrusion

S3:壓入構件 S3: Press-in components

S4:金屬墊圈 S4: Metal washers

S5:金屬O形環 S5: Metal O-ring

W:基板 W: substrate

X1:第一被按壓面 X1: The first pressed surface

X2:第二被按壓面 X2: The second pressed surface

X3:第三被按壓面 X3: The third pressed surface

X4:背面 X4: back

Y1:第一按壓面 Y1: The first pressing surface

Y2:第二按壓面 Y2: The second pressing surface

Y3:第三按壓面 Y3: The third pressing surface

Y4:按壓面 Y4: pressing surface

Z:承接構件 Z: receiving component

Z1:一端部 Z1: one end

Z2:另一端部 Z2: the other end

Z3:大徑部 Z3: Large diameter part

Za:抵接面 Za: abutting surface

Zh:貫通孔 Zh: Through hole

圖1為示意性地表示本實施形態的電漿處理裝置的構成的縱剖面圖。 Fig. 1 is a longitudinal cross-sectional view schematically showing the configuration of the plasma processing apparatus of the present embodiment.

圖2為示意性地表示該實施形態的天線的周邊構成的放大剖面圖。 Fig. 2 is an enlarged cross-sectional view schematically showing the peripheral structure of the antenna of the embodiment.

圖3為表示該實施形態的金屬密封件的構成的示意圖。 Fig. 3 is a schematic diagram showing the structure of the metal seal of the embodiment.

圖4為表示變形實施形態的金屬密封件的構成的示意圖。 Fig. 4 is a schematic diagram showing the structure of a metal seal according to a modified embodiment.

圖5為表示變形實施形態的金屬密封件的構成的示意圖。 Fig. 5 is a schematic diagram showing the structure of a metal seal according to a modified embodiment.

圖6為示意性地表示變形實施形態的電漿處理裝置的構成的縱剖面圖。 Fig. 6 is a longitudinal sectional view schematically showing the configuration of a plasma processing apparatus according to a modified embodiment.

以下,參照圖式對本發明的電漿處理裝置的一實施形態進行說明。 Hereinafter, an embodiment of the plasma processing apparatus of the present invention will be described with reference to the drawings.

<裝置構成> <Device configuration>

本實施形態的電漿處理裝置100使用感應耦合式的電漿P對基板W實施處理。基板W例如為液晶顯示器或有機電致發光 (Electroluminescence,EL)顯示器等平板顯示器(Flat Panel Display,FPD)用的基板、可撓性顯示器用的可撓性基板等。另外,對基板W實施的處理例如為利用電漿化學氣相沈積(Chemical Vapor Deposition,CVD)法的膜形成、蝕刻、灰化(ashing)、濺鍍等。 The plasma processing apparatus 100 of the present embodiment uses inductively coupled plasma P to process the substrate W. The substrate W is, for example, a liquid crystal display or organic electroluminescence (Electroluminescence, EL) Displays and other flat panel displays (Flat Panel Display, FPD) substrates, flexible substrates for flexible displays, etc. In addition, the processing performed on the substrate W is, for example, film formation by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method, etching, ashing, sputtering, and the like.

再者,該電漿處理裝置100於藉由電漿CVD法進行膜形成的情形時亦稱為電漿CVD裝置,於進行蝕刻的情形時亦稱為電漿蝕刻裝置,於進行灰化的情形時亦稱為電漿灰化裝置,於進行濺鍍的情形時亦稱為電漿濺鍍裝置。 Furthermore, the plasma processing device 100 is also called a plasma CVD device when the film is formed by a plasma CVD method, and is also called a plasma etching device when etching is performed, and when ashing is performed It is also called a plasma ashing device, and it is also called a plasma sputtering device in the case of sputtering.

具體而言,電漿處理裝置100如圖1所示,具有經真空排氣且導入氣體7的真空容器2、配置於真空容器2內的直線狀的天線3、及將用以於真空容器2內生成感應耦合式的電漿P的高頻施加於天線3的高頻電源4。再者,藉由自高頻電源4對天線3施加高頻而於天線3中流動高頻電流IR,於真空容器2內產生感應電場而生成感應耦合式的電漿P。 Specifically, as shown in FIG. 1, the plasma processing apparatus 100 has a vacuum container 2 evacuated and introduced with a gas 7, a linear antenna 3 arranged in the vacuum container 2, and a vacuum container 2 to be used. The high frequency in which inductively coupled plasma P is generated is applied to the high frequency power source 4 of the antenna 3. Furthermore, by applying a high frequency to the antenna 3 from the high frequency power supply 4, and a high frequency current IR flows in the antenna 3, an induced electric field is generated in the vacuum container 2 to generate an inductive coupling type plasma P.

真空容器2例如為金屬製的容器,其內部藉由真空排氣裝置6而進行真空排氣。真空容器2於本例中電性接地。 The vacuum container 2 is, for example, a metal container, and the inside thereof is evacuated by a vacuum exhaust device 6. The vacuum container 2 is electrically grounded in this example.

於真空容器2內,例如經由流量調整器(省略圖示)及形成於真空容器2的側壁的多個氣體導入口21而導入氣體7。氣體7只要與對基板W實施的處理內容相應即可。例如,於藉由電漿CVD法對基板W進行膜形成的情形時,氣體7為原料氣體或利用稀釋氣體(例如H2)將原料氣體稀釋而得的氣體。若進一步 列舉具體例,則於原料氣體為SiH4的情形時可於基板W上形成Si膜,於原料氣體為SiH4+NH3的情形時可於基板W上形成SiN膜,於原料氣體為SiH4+O2的情形時可於基板W上形成SiO2膜,於原料氣體為SiF4+N2的情形時可於基板W上形成SiN:F膜(氟化氮化矽膜)。 In the vacuum container 2, the gas 7 is introduced through, for example, a flow regulator (not shown) and a plurality of gas introduction ports 21 formed on the side wall of the vacuum container 2. The gas 7 only needs to correspond to the content of the processing performed on the substrate W. For example, in the case of film formation on the substrate W by the plasma CVD method, the gas 7 is a source gas or a gas obtained by diluting the source gas with a dilution gas (for example, H 2 ). If a further specific example, the raw material gas is available at the Si film is formed on the substrate W when SiH case 4, the raw material gas is SiH 4 + when the case of NH 3 can be in the SiN film was formed on the substrate W, the raw material gas is In the case of SiH 4 +O 2 , a SiO 2 film can be formed on the substrate W , and in the case of SiF 4 +N 2 as the source gas, a SiN:F film (fluorinated silicon nitride film) can be formed on the substrate W.

另外,於真空容器2內設有保持基板W的基板固持器8。如本例般,亦可對基板固持器8自偏壓(bias)電源9施加偏壓電壓。偏壓電壓例如為負的直流電壓、負的脈波電壓等,但不限於此。可藉由此種偏壓電壓而控制例如電漿P中的正離子入射至基板W時的能量,進行形成於基板W的表面的膜的結晶度的控制等。亦可於基板固持器8內設置將基板W加熱的加熱器81。 In addition, a substrate holder 8 that holds the substrate W is provided in the vacuum container 2. As in this example, a bias voltage can also be applied to the substrate holder 8 from a bias power source 9. The bias voltage is, for example, a negative direct current voltage, a negative pulse voltage, etc., but is not limited to this. Such a bias voltage can control, for example, the energy of the positive ions in the plasma P when incident on the substrate W, and control the crystallinity of the film formed on the surface of the substrate W, and the like. A heater 81 for heating the substrate W may be provided in the substrate holder 8.

天線3以沿著基板W的表面的方式(例如與基板W的表面實質上平行地)配置於真空容器2內的基板W的上方。配置於真空容器2內的天線3可為一根,亦可為多根。 The antenna 3 is arranged above the substrate W in the vacuum vessel 2 along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W). There may be one antenna 3 arranged in the vacuum container 2 or multiple antennas.

天線3的兩端部附近分別貫通真空容器2的相對向的側壁。於使天線3的兩端部向真空容器2外貫通的部分,分別設有絕緣構件11。天線3的兩端部貫通該各絕緣構件11,其貫通部例如藉由襯墊(packing)12而真空密封。各絕緣構件11與真空容器2之間亦例如藉由襯墊13而真空密封。再者,絕緣構件11的材質例如為氧化鋁等陶瓷、石英、或聚苯硫醚(polyphenylene sulfide,PPS)、聚醚醚酮(polyether-ether-ketone,PEEK)等工程塑膠等 The vicinity of both ends of the antenna 3 penetrates the opposing side walls of the vacuum container 2 respectively. Insulating members 11 are respectively provided in the portions where both ends of the antenna 3 penetrate outside the vacuum container 2. Both ends of the antenna 3 penetrate through each insulating member 11, and the penetration portion thereof is vacuum-sealed by a packing 12, for example. The insulating member 11 and the vacuum container 2 are also vacuum sealed by a gasket 13, for example. Furthermore, the material of the insulating member 11 is, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenylene sulfide (PPS), polyether-ether-ketone (PEEK), etc.

進而,天線3中位於真空容器2內的部分藉由直管狀的絕緣罩10而包覆。該絕緣罩10的兩端部由絕緣構件11支持。再者,絕緣罩10的兩端部與絕緣構件11間亦可不密封。其原因在於,即便氣體7進入絕緣罩10內的空間,該空間小而電子的移動距離短,故而通常於空間中不產生電漿P。再者,絕緣罩10的材質例如為石英、氧化鋁(alumina)、氟樹脂、氮化矽、碳化矽、矽等。 Furthermore, the portion of the antenna 3 located in the vacuum container 2 is covered by a straight tube-shaped insulating cover 10. Both ends of the insulating cover 10 are supported by insulating members 11. Furthermore, the two ends of the insulating cover 10 and the insulating member 11 may not be sealed. The reason is that even if the gas 7 enters the space in the insulating cover 10, the space is small and the moving distance of the electrons is short, so plasma P is usually not generated in the space. Furthermore, the material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, etc.

藉由設置絕緣罩10,可抑制電漿P中的帶電粒子入射至構成天線3的金屬管31,故而可抑制由帶電粒子(主要為電子)入射至金屬管31所導致的電漿電位的上升,並且可抑制金屬管31被帶電粒子(主要為離子)濺鍍而對電漿P及基板W產生金屬污染(metal contamination)。 By providing the insulating cover 10, it is possible to suppress the charged particles in the plasma P from entering the metal tube 31 constituting the antenna 3, and therefore it is possible to suppress the increase in the plasma potential caused by the charged particles (mainly electrons) entering the metal tube 31. In addition, the metal tube 31 can be prevented from being sputtered by charged particles (mainly ions) to cause metal contamination to the plasma P and the substrate W.

於作為天線3的一端部的供電端部3a,經由匹配電路41而連接有高頻電源4,作為另一端部的終端部3b直接接地。再者,供電端部3a亦可經由電容器或線圈等而連接於高頻電源4,終端部3b亦可經由電容器或線圈等而接地。 The high-frequency power source 4 is connected to the power feeding end portion 3a as one end portion of the antenna 3 via the matching circuit 41, and the end portion 3b as the other end portion is directly grounded. Furthermore, the power feeding end portion 3a may be connected to the high-frequency power source 4 via a capacitor or a coil, and the terminal portion 3b may be grounded via a capacitor or a coil.

可藉由所述構成自高頻電源4經由匹配電路41於天線3中流動高頻電流IR。高頻電流IR的頻率例如為通常的13.56MHz,但不限於此。 With the above configuration, the high-frequency current IR can flow from the high-frequency power source 4 through the matching circuit 41 to the antenna 3. The frequency of the high-frequency current IR is, for example, a normal 13.56 MHz, but it is not limited to this.

天線3為於內部具有冷卻液CL流通的流路的中空結構。再者,冷卻液CL藉由設於真空容器2的外部的循環流路14而於天線3中流通,所述循環流路14中,設有用以將冷卻液CL調整 至一定溫度的熱交換器等調溫機構141、及用以使冷卻液CL於循環流路14中循環的泵等循環機構142。作為冷卻液CL,就電氣絕緣的觀點而言,較佳為高電阻的水,例如較佳為純水或接近純水的水。此外,例如亦可使用氟系非活性液體等水以外的液體冷媒。 The antenna 3 has a hollow structure having a flow path through which the cooling liquid CL flows inside. Furthermore, the cooling liquid CL circulates through the antenna 3 through a circulation flow path 14 provided outside the vacuum vessel 2. The circulation flow path 14 is provided with a channel for adjusting the cooling liquid CL. A temperature adjustment mechanism 141 such as a heat exchanger to a constant temperature, and a circulation mechanism 142 such as a pump for circulating the coolant CL in the circulation flow path 14. As the coolant CL, from the viewpoint of electrical insulation, high-resistance water is preferable, for example, pure water or water close to pure water is preferable. In addition, for example, a liquid refrigerant other than water such as a fluorine-based inert liquid may also be used.

具體而言,如圖2所示,天線3具有:至少一對呈管狀的金屬製的導體元件31(以下稱為「金屬管31」);及管狀的中空絕緣體32(以下稱為「絕緣管32」),設於彼此相鄰的金屬管31之間,將該些金屬管31絕緣。 Specifically, as shown in FIG. 2, the antenna 3 has: at least a pair of tubular metal conductor elements 31 (hereinafter referred to as "metal tube 31"); and a tubular hollow insulator 32 (hereinafter referred to as "insulating tube 32"), which are arranged between the metal pipes 31 adjacent to each other to insulate the metal pipes 31.

本實施形態中,金屬管31的個數為兩個,絕緣管32的個數為一個。以下的說明中,將其中一個金屬管31亦稱為「第一金屬管31A」,將另一個金屬管亦稱為「第二金屬管31B」。再者,天線3亦可為具有三個以上的金屬管31的構成,於該情形時,絕緣管32的個數均較金屬管31的個數少一個。 In this embodiment, the number of metal pipes 31 is two, and the number of insulating pipes 32 is one. In the following description, one of the metal pipes 31 is also referred to as the "first metal pipe 31A", and the other metal pipe is also referred to as the "second metal pipe 31B". Furthermore, the antenna 3 may also have a configuration with three or more metal tubes 31. In this case, the number of insulating tubes 32 is one less than the number of metal tubes 31.

金屬管31呈於內部形成有冷卻液CL流動的直線狀的流路31x的直管狀,材質例如為銅、鋁、該些金屬的合金、不銹鋼等。 The metal tube 31 has a straight tube shape in which a linear flow path 31x in which the cooling liquid CL flows is formed, and the material is, for example, copper, aluminum, alloys of these metals, stainless steel, or the like.

絕緣管32呈直管狀,於內部形成有冷卻液CL流動的直線狀的流路32x。本實施形態的絕緣管32由單一的構件所形成,但亦可將多個構件接合而形成。再者,絕緣管32的材質例如為氧化鋁、氟樹脂、聚乙烯(polyethylene,PE)、工程塑膠(例如聚苯硫醚(PPS)、聚醚醚酮(PEEK)等)等。 The insulating tube 32 has a straight tube shape, and a linear flow path 32x in which the cooling liquid CL flows is formed. The insulating tube 32 of this embodiment is formed of a single member, but it may be formed by joining a plurality of members. Furthermore, the material of the insulating tube 32 is, for example, alumina, fluororesin, polyethylene (PE), engineering plastics (for example, polyphenylene sulfide (PPS), polyether ether ketone (PEEK), etc.).

而且,如圖2及圖3所示,本實施形態的天線3具備分 別設於第一金屬管31A與絕緣管32之間、及第二金屬管31B與絕緣管32之間的金屬密封件(metal seal)S Furthermore, as shown in Figs. 2 and 3, the antenna 3 of this embodiment A metal seal (metal seal) S separately provided between the first metal pipe 31A and the insulating pipe 32, and between the second metal pipe 31B and the insulating pipe 32

若加以更具體說明,則金屬密封件S用於確保各金屬管31A、金屬管31B與絕緣管32之間的密封性,此處金屬密封件S以如下方式構成:被按壓而接觸設於絕緣管32的兩端部的承接構件Z,由此至少一部發生按壓變形。 More specifically, the metal seal S is used to ensure the sealability between the metal pipes 31A, 31B, and the insulating pipe 32. Here, the metal seal S is configured as follows: it is pressed to contact the insulating pipe 32 At least a part of the receiving members Z at both ends of the tube 32 is deformed by pressing by this.

首先,對承接構件Z進行說明。 First, the receiving member Z will be described.

承接構件Z用於在使金屬密封件S按壓變形時防止絕緣管32變形,包含較絕緣管32而強度更強的材質,例如由鋁、銅、該些金屬的合金等金屬所形成。 The receiving member Z is used to prevent deformation of the insulating tube 32 when the metal seal S is pressed and deformed, and includes a stronger material than the insulating tube 32, such as aluminum, copper, alloys of these metals, and other metals.

該承接構件Z如圖2所示,與絕緣管32連通,一端部Z1嵌合於將絕緣管32的內壁埋入的埋頭孔部321,並且金屬管31的端部31t自另一端部Z2插入。再者,此處金屬管31的端部31t的外徑小於金屬管31的中央部的外徑,承接構件Z的內徑與金屬管31的端部31t的外徑大致相同或稍大。 As shown in FIG. 2, the receiving member Z communicates with the insulating tube 32, one end Z1 is fitted into the counterbore 321 in which the inner wall of the insulating tube 32 is embedded, and the end 31t of the metal tube 31 extends from the other end Z2. insert. Furthermore, the outer diameter of the end 31t of the metal pipe 31 is smaller than the outer diameter of the center of the metal pipe 31, and the inner diameter of the receiving member Z is approximately the same as or slightly larger than the outer diameter of the end 31t of the metal pipe 31.

於承接構件Z的一端部Z1,形成有自另一端部Z2插入的金屬管31的端部31t抵接的抵接面Za。 The one end part Z1 of the receiving member Z is formed with the contact surface Za which the end part 31t of the metal pipe 31 inserted from the other end part Z2 abuts.

抵接面Za為金屬管31的端面抵接的面,藉由金屬管31的端面抵接於該抵接面Za,而將承接構件Z與金屬管31電性連接。 The abutting surface Za is a surface on which the end surface of the metal pipe 31 abuts, and when the end surface of the metal pipe 31 abuts on the abutting surface Za, the receiving member Z and the metal pipe 31 are electrically connected.

於承接構件Z的另一端部Z2,形成有金屬密封件S被按壓而接觸的第一被按壓面X1。 At the other end Z2 of the receiving member Z, a first pressed surface X1 to which the metal seal S is pressed and in contact is formed.

第一被按壓面X1形成於承接構件Z的另一端部Z2的內周 面,為自一端部Z1側向另一端部Z2側逐漸擴徑的截頭圓錐形狀的傾斜面,且相對於天線3的軸向而傾斜。另外,於另一端部Z2的外周面形成有外螺紋部N1,所述外螺紋部N1以螺合後述的金屬密封件S的構成元件的壓入構件S3的方式構成。 The first pressed surface X1 is formed on the inner circumference of the other end Z2 of the receiving member Z The surface is a truncated cone-shaped inclined surface gradually expanding in diameter from the one end Z1 side to the other end Z2 side, and is inclined with respect to the axial direction of the antenna 3. In addition, a male thread part N1 is formed on the outer peripheral surface of the other end part Z2, and the male thread part N1 is configured to screw a press-fitting member S3 of a constituent element of the metal seal S described later.

該承接構件Z中,於一端部Z1與另一端部Z2之間設有較絕緣管32而外徑更大的大徑部Z3。而且,藉由使該大徑部Z3抵接於絕緣管32的端面,並且焊接其抵接部位,而將承接構件Z與絕緣管32不可分離地一體設置。 In this receiving member Z, a large-diameter portion Z3 having a larger outer diameter than the insulating tube 32 is provided between one end portion Z1 and the other end portion Z2. Furthermore, by making the large diameter portion Z3 abut on the end surface of the insulating tube 32 and welding the abutting part, the receiving member Z and the insulating tube 32 are integrally provided inseparably.

繼而,對金屬密封件S加以說明。 Next, the metal seal S will be described.

如圖3所示,金屬密封件S介於承接構件Z與金屬管31之間,被稱為所謂雙套圈(double ferrule)。具體而言,該金屬密封件S具有被按壓而接觸承接構件Z的第一套圈S1、位於較第一套圈S1更靠金屬管31側的第二套圈S2、及將第二套圈S2自金屬管31側向第一套圈S1側壓入的壓入構件S3。第一套圈S1、第二套圈S2及壓入構件S3呈外嵌於金屬管31的端部31t的環狀,此處由與金屬管31相同的材質即銅、鋁、該些金屬的合金、不銹鋼等所形成,但亦可由與金屬管31不同的材質形成。 As shown in FIG. 3, the metal seal S is interposed between the receiving member Z and the metal pipe 31, and is called a so-called double ferrule. Specifically, the metal seal S has a first ferrule S1 that is pressed to contact the receiving member Z, a second ferrule S2 located closer to the metal tube 31 than the first ferrule S1, and a second ferrule S2 is a press-fitting member S3 press-fitted from the metal pipe 31 side to the first ferrule S1 side. The first ferrule S1, the second ferrule S2, and the press-fitting member S3 are ring-shaped externally embedded in the end 31t of the metal pipe 31, where they are made of the same material as the metal pipe 31, namely copper, aluminum, and these metals. It is formed of alloy, stainless steel, etc., but it may also be formed of a material different from that of the metal pipe 31.

第一套圈S1具有與金屬管31的端部31t的外徑大致相同或稍大的內徑,後端部S1b被第二套圈S2擠壓,並且前端部S1a被壓入至承接構件Z。第一套圈S1的外周面為自前端部S1a向後端部S1b逐漸擴徑的截頭圓錐形狀的傾斜面。而且,該外周面的前端部S1a側形成為被按壓而接觸所述第一被按壓面X1的第一按 壓面Y1,相對於天線3的軸向而傾斜。另外,於第一套圈S1的後端部S1b,形成有第二套圈S2的前端部S2a被按壓而接觸的第二被按壓面X2。第二被按壓面X2例如是將第一套圈S1的後端部S1b切缺而形成,此處設定於該後端部S1b的內周面。此處的第二被按壓面X2為向後方逐漸擴徑的傾斜面,相對於天線3的軸向而傾斜。 The first ferrule S1 has an inner diameter that is approximately the same as or slightly larger than the outer diameter of the end 31t of the metal pipe 31, the rear end S1b is pressed by the second ferrule S2, and the front end S1a is pressed into the receiving member Z . The outer peripheral surface of the first ferrule S1 is a frusto-conical inclined surface whose diameter gradually expands from the front end S1a to the rear end S1b. Furthermore, the front end portion S1a side of the outer peripheral surface is formed as a first press that is pressed and contacts the first pressed surface X1. The pressing surface Y1 is inclined with respect to the axial direction of the antenna 3. In addition, in the rear end S1b of the first ferrule S1, a second pressed surface X2 to which the front end S2a of the second ferrule S2 is pressed and contacted is formed. The second pressed surface X2 is formed by cutting the rear end S1b of the first ferrule S1, for example, and is set here on the inner peripheral surface of the rear end S1b. The second pressed surface X2 here is an inclined surface gradually expanding in diameter toward the rear, and is inclined with respect to the axial direction of the antenna 3.

第二套圈S2具有內徑與金屬管31的端部31t的外徑大致相同或稍大的前側內周面S21、及自前側內周面S21向後方逐漸擴徑的後側內周面S22,後端部S2b被壓入構件S3按壓,並且前端部S2a被壓入至第一套圈S1的後端部S1b。於第二套圈S2的前端部S2a,形成有被按壓而接觸所述第二被按壓面X2的第二按壓面Y2。第二按壓面Y2例如為自前端部S2a向後方逐漸擴徑的傾斜面,相對於天線3的軸向而傾斜。另外,於第二套圈S2的後端部S2b,形成有由壓入構件S3所按壓的第三被按壓面X3、及自後側內周面S22向徑向內側突出的環狀突出部S23。第三被按壓面X3為隨著朝向後方而逐漸縮徑的傾斜面,相對於天線3的軸向而傾斜。藉由使第三被按壓面X3如此般傾斜,於壓入構件S3將第二套圈S2向第一套圈S1壓入時,產生將第二套圈S2向徑向內側按壓的力。其結果,環狀突出部S23以朝向金屬管31的外周面收縮的方式發生按壓變形,相對於金屬管31而固定第二套圈S2。 The second ferrule S2 has a front inner peripheral surface S21 whose inner diameter is approximately the same as or slightly larger than the outer diameter of the end 31t of the metal pipe 31, and a rear inner peripheral surface S22 whose diameter gradually expands toward the rear from the front inner peripheral surface S21 , The rear end S2b is pressed by the pressing member S3, and the front end S2a is pressed into the rear end S1b of the first ferrule S1. A second pressing surface Y2 that is pressed to contact the second pressed surface X2 is formed at the front end portion S2a of the second ferrule S2. The second pressing surface Y2 is, for example, an inclined surface gradually expanding in diameter from the front end portion S2 a to the rear, and is inclined with respect to the axial direction of the antenna 3. In addition, at the rear end portion S2b of the second ferrule S2, there are formed a third pressed surface X3 pressed by the press-fitting member S3, and an annular protrusion S23 projecting radially inward from the rear inner peripheral surface S22 . The third pressed surface X3 is an inclined surface whose diameter gradually decreases toward the rear, and is inclined with respect to the axial direction of the antenna 3. By inclining the third pressed surface X3 in this way, when the pressing member S3 presses the second ferrule S2 into the first ferrule S1, a force for pressing the second ferrule S2 inward in the radial direction is generated. As a result, the annular protrusion S23 is pressed and deformed so as to shrink toward the outer peripheral surface of the metal pipe 31, and the second ferrule S2 is fixed to the metal pipe 31.

壓入構件S3具有:前側內周面S31,形成有與在所述承接構件Z的外周面所形成的外螺紋部N1螺合的內螺紋部N2;及 後側內周面S32,內徑與金屬管31的端部31t的外徑大致相同或稍大。於壓入構件S3的內周面,於前側內周面S31及後側內周面S32之間,設有按壓所述第三被按壓面X3的第三按壓面Y3。此處的第三按壓面Y3為隨著朝向後方而逐漸縮徑的傾斜面,相對於天線3的軸向而傾斜。 The press-fitting member S3 has: a front inner peripheral surface S31 formed with a female screw portion N2 screwed to a male screw portion N1 formed on the outer peripheral surface of the receiving member Z; and The inner diameter of the rear inner peripheral surface S32 is approximately the same as or slightly larger than the outer diameter of the end 31t of the metal pipe 31. On the inner peripheral surface of the press-fitting member S3, between the front inner peripheral surface S31 and the rear inner peripheral surface S32, a third pressing surface Y3 that presses the third pressed surface X3 is provided. The third pressing surface Y3 here is an inclined surface whose diameter gradually decreases toward the rear, and is inclined with respect to the axial direction of the antenna 3.

根據所述構成,藉由使壓入構件S3的內螺紋部N2螺合於承接構件Z的外螺紋部N1,而壓入構件S3的第三按壓面Y3按壓第二套圈S2的第三被按壓面X3,將第二套圈S2向第一套圈S1沿軸向壓入。藉此,第二套圈S2的第二按壓面Y2按壓第一套圈S1的第二被按壓面X2,將第一套圈S1向承接構件Z沿軸向壓入。而且,第一套圈S1的第一按壓面Y1被按壓而接觸承接構件Z的第一被按壓面X1,第一套圈S1的前端部S1a發生按壓變形,將第一按壓面Y1與第一被按壓面X1之間保持為氣密或液密。 According to the above configuration, by screwing the female thread portion N2 of the press-fitting member S3 to the male thread portion N1 of the receiving member Z, the third pressing surface Y3 of the press-fitting member S3 presses the third ring of the second ferrule S2. The pressing surface X3 presses the second ferrule S2 into the first ferrule S1 in the axial direction. Thereby, the second pressing surface Y2 of the second ferrule S2 presses the second pressed surface X2 of the first ferrule S1, and presses the first ferrule S1 into the receiving member Z in the axial direction. Furthermore, the first pressing surface Y1 of the first ferrule S1 is pressed to contact the first pressed surface X1 of the receiving member Z, and the tip portion S1a of the first ferrule S1 is pressed and deformed, and the first pressing surface Y1 is connected to the first pressed surface X1. The space between the pressed surfaces X1 is kept air-tight or liquid-tight.

另外,在如所述般使壓入構件S3螺合於承接構件Z而將第一按壓面Y1與第一被按壓面X1之間密封的過程中,第一套圈S1、第二套圈S2及承接構件Z的一端部Z1於徑向上發生按壓變形,由此承接構件Z、第一套圈S1及第二套圈S2一體地緊固夾持金屬管31。 In addition, in the process of screwing the press-fitting member S3 to the receiving member Z to seal between the first pressing surface Y1 and the first pressed surface X1 as described above, the first ferrule S1 and the second ferrule S2 And one end Z1 of the receiving member Z is pressed and deformed in the radial direction, whereby the receiving member Z, the first ferrule S1, and the second ferrule S2 are integrally fastened and clamped to the metal pipe 31.

如此構成的天線3如圖2所示,更具有電容器33,該電容器33為與彼此相鄰的金屬管31電性串聯連接的電容元件。該電容器33設於絕緣管32的內部,此處設於絕緣管32的冷卻液CL流動的流路32x的內部。 As shown in FIG. 2, the antenna 3 thus constructed further has a capacitor 33, which is a capacitive element electrically connected in series with the metal tubes 31 adjacent to each other. The capacitor 33 is provided inside the insulating tube 32, and here, is provided inside the flow path 32x through which the cooling liquid CL of the insulating tube 32 flows.

具體而言,電容器33具備與彼此相鄰的金屬管31的其中一者(第一金屬管31A)電性連接的第一電極33A、及與彼此相鄰的金屬管31的另一者(第二金屬管31B)電性連接並且與第一電極33A相向地配置的第二電極33B,且以冷卻液CL將第一電極33A及第二電極33B之間的空間充滿的方式構成。即,在該第一電極33A及第二電極33B之間的空間中流動的冷卻液CL成為構成電容器33的介電質。 Specifically, the capacitor 33 includes a first electrode 33A electrically connected to one of the metal tubes 31 adjacent to each other (first metal tube 31A), and another one (first metal tube 31A) connected to the other metal tube 31 adjacent to each other. The two metal pipes 31B) are electrically connected to the second electrode 33B arranged opposite to the first electrode 33A, and are configured to fill the space between the first electrode 33A and the second electrode 33B with the coolant CL. That is, the cooling liquid CL flowing in the space between the first electrode 33A and the second electrode 33B becomes the dielectric substance constituting the capacitor 33.

各電極33A、電極33B呈大致旋轉體形狀,並且沿其中心軸於中央部形成有主流路33x。具體而言,各電極33A、電極33B呈圓筒形狀,彼此配置於同軸上。此處,第一電極33A的內徑大於第二電極33B的外徑,於第一電極33A的內部插入第二電極33B。藉此,於第一電極33A與第二電極33B之間形成沿著流路方向的圓筒狀的空間。 Each of the electrodes 33A and 33B has a substantially rotating body shape, and a main flow path 33x is formed at the center along the center axis. Specifically, the electrodes 33A and 33B have a cylindrical shape and are arranged coaxially with each other. Here, the inner diameter of the first electrode 33A is larger than the outer diameter of the second electrode 33B, and the second electrode 33B is inserted inside the first electrode 33A. Thereby, a cylindrical space along the flow path direction is formed between the first electrode 33A and the second electrode 33B.

如此構成的各電極33A、電極33B一體地設於所述承接構件Z。此處,由單一的構件形成各電極33A、電極33B及承接構件Z而一體地設置,但亦可藉由不同零件而形成該些部分並將該些部分接合。再者,各電極33A、電極33B的材質例如為鋁、銅、該些金屬的合金等。 The electrodes 33A and 33B configured in this way are integrally provided on the receiving member Z. Here, the electrodes 33A, the electrodes 33B, and the receiving member Z are formed integrally by a single member, but these parts may be formed and joined by different parts. In addition, the materials of the electrodes 33A and 33B are, for example, aluminum, copper, alloys of these metals, or the like.

如此般將各電極33A、電極33B一體地設於承接構件Z,故而藉由將承接構件Z如所述般焊接於絕緣管32的兩端部,而將第一電極33A及第二電極33B彼此配置於同軸上,並且規定第二電極33B對第一電極33A的插入尺寸。而且,藉由將金屬管31A、 金屬管31B如所述般自承接構件Z的另一端部Z2插入,並與在承接構件Z的一端部Z1所形成的抵接面Za抵接,而將第一金屬管31A與第一電極33A電性連接,並且將第二金屬管31B與第二電極33B電性連接。 In this way, the electrodes 33A and 33B are integrally provided on the receiving member Z. Therefore, by welding the receiving member Z to both ends of the insulating tube 32 as described above, the first electrode 33A and the second electrode 33B are connected to each other. It is arranged on the same axis and defines the insertion size of the second electrode 33B into the first electrode 33A. Moreover, by connecting the metal pipe 31A, The metal pipe 31B is inserted from the other end Z2 of the receiving member Z as described above, and abuts against the contact surface Za formed at the one end Z1 of the receiving member Z, thereby connecting the first metal pipe 31A and the first electrode 33A It is electrically connected, and electrically connects the second metal tube 31B and the second electrode 33B.

於該構成中,若冷卻液CL從第一金屬管31A逐漸流動,則冷卻液CL通過第一電極33A的主流路33x而流至第二電極33B側。流至第二電極33B側的冷卻液CL通過第二電極33B的主流路33x而流至第二金屬管31B。此時,第一電極33A與第二電極33B之間的圓筒狀的空間經冷卻液CL充滿,該冷卻液CL成為介電質而構成電容器33。再者,於承接構件Z的一端部Z1,於厚度方向上形成有多個貫通孔Zh。藉由設置此種貫通孔Zh,可減小由承接構件Z所致的冷卻液CL的流路阻力,並且防止絕緣管32內的冷卻液CL的滯留、及氣泡蓄積於絕緣管32內。 In this configuration, when the cooling liquid CL gradually flows from the first metal pipe 31A, the cooling liquid CL flows to the second electrode 33B side through the main flow path 33x of the first electrode 33A. The coolant CL flowing to the second electrode 33B side passes through the main flow path 33x of the second electrode 33B and flows to the second metal pipe 31B. At this time, the cylindrical space between the first electrode 33A and the second electrode 33B is filled with the cooling liquid CL, and the cooling liquid CL becomes a dielectric substance to constitute the capacitor 33. Furthermore, at one end Z1 of the receiving member Z, a plurality of through holes Zh are formed in the thickness direction. By providing such a through hole Zh, the flow path resistance of the cooling liquid CL caused by the receiving member Z can be reduced, and the stagnation of the cooling liquid CL in the insulating tube 32 and the accumulation of air bubbles in the insulating tube 32 can be prevented.

<本實施形態的效果> <Effects of this embodiment>

根據如此構成的本實施形態的天線3,於一對金屬管31及絕緣管32之間分別設有較橡膠製的O形環更為耐受經年劣化或熱影響的金屬密封件S,故而即便於增長天線3的情形時,亦可確保金屬管31及絕緣管32之間的密封性。 According to the antenna 3 of the present embodiment configured in this way, a metal seal S that is more resistant to aging deterioration or thermal influence than a rubber O-ring is provided between the pair of metal pipes 31 and the insulating pipe 32, and therefore Even when the antenna 3 is lengthened, the sealing property between the metal tube 31 and the insulating tube 32 can be ensured.

而且,將承接構件Z焊接於絕緣管32,並且承接構件Z、第一套圈S1及第二套圈S2一體地緊固夾持金屬管31,故而可抑制各金屬管31或絕緣管32的鬆動,於此方面而言亦可確保密封性。 Furthermore, the receiving member Z is welded to the insulating tube 32, and the receiving member Z, the first ferrule S1, and the second ferrule S2 are integrally fastened and clamped to the metal tube 31, so that the metal tube 31 or the insulating tube 32 can be restrained from being damaged. Looseness can also ensure sealing in this respect.

另外,由較絕緣管32而強度更強的材質來形成設於絕緣 管32的兩端部的承接構件Z,故而可於使金屬密封件S發生按壓變形時防止絕緣管32變形,從而可使金屬密封件S可靠地發生按壓變形。 In addition, it is made of a stronger material than the insulating tube 32. The receiving members Z at both ends of the tube 32 can prevent the insulating tube 32 from being deformed when the metal seal S is pressed and deformed, so that the metal seal S can be reliably pressed and deformed.

進而,電容器33與一對金屬管31電性串聯連接,故而可使天線3的合成電抗成為由感應性電抗減去電容性電抗的形式。其結果,可降低天線3的阻抗,即便於增長天線3的情形時亦抑制其阻抗的增大,容易於天線3中流動高頻電流,可高效率地產生均勻性良好的電漿P。 Furthermore, since the capacitor 33 is electrically connected in series with the pair of metal tubes 31, the combined reactance of the antenna 3 can be made into a form in which the capacitive reactance is subtracted from the inductive reactance. As a result, the impedance of the antenna 3 can be reduced, and the increase in the impedance of the antenna 3 can be suppressed even when the antenna 3 is lengthened, a high-frequency current can easily flow through the antenna 3, and a plasma P with good uniformity can be generated efficiently.

而且,各電極33A、電極33B分別設於承接構件Z,故而若將承接構件Z焊接於絕緣管32,則規定第一電極33A及第二電極的相對位置關係,於焊接後維持各電極33A、電極33B的位置關係,故而不會導致電容器的靜電電容的再現性的降低。而且,將承接構件Z與絕緣管32焊接,故而無需於該些構件之間設置密封件,從而可減少零件數。 Furthermore, the electrodes 33A and 33B are respectively provided on the receiving member Z. Therefore, when the receiving member Z is welded to the insulating tube 32, the relative positional relationship between the first electrode 33A and the second electrode is defined, and the electrodes 33A, 33A and 33B are maintained after welding. The positional relationship of the electrode 33B does not cause a decrease in the reproducibility of the capacitance of the capacitor. Furthermore, since the receiving member Z and the insulating tube 32 are welded, there is no need to provide a seal between these members, so that the number of parts can be reduced.

此外,第一套圈S1的第一按壓面Y1或承接構件Z的第一被按壓面X1為傾斜面,具有沿著天線3的軸向的成分,故而可將第一按壓面Y1及第一被按壓面X1之間進行面密封。藉此,與例如第一按壓面Y1或第一被按壓面X1為與天線3的軸向垂直的面,與該些面之間被軸密封的構成相比,密封性更良好。 In addition, the first pressing surface Y1 of the first ferrule S1 or the first pressed surface X1 of the receiving member Z is an inclined surface and has a component along the axial direction of the antenna 3. Therefore, the first pressing surface Y1 and the first pressed surface X1 A surface seal is performed between the pressed surface X1. By this, for example, the first pressing surface Y1 or the first pressed surface X1 is a surface perpendicular to the axial direction of the antenna 3, and the sealing performance is better than a configuration in which the surfaces are sealed by the shaft.

電容器33的介電質為將第一電極33A及第二電極33B之間的空間充滿的液體,故而可消除構成電容器33的各電極33A、電極33B及介電質之間產生的間隙。其結果,可消除於各電 極33A、電極33B及介電質之間的間隙中可能產生的電弧放電,而消除由電弧放電所引起的電容器33的破損。另外,可不考慮間隙而根據第一電極33A及第二電極33B的距離、相向面積及液體的介電質的相對介電常數來高精度地設定電容值。進而,亦可不需要用以填埋間隙的按壓各電極33A、電極33B及介電質的結構,從而可防止由該按壓結構所致的天線周邊結構的複雜化及由此產生的電漿P的均勻性的劣化。 The dielectric of the capacitor 33 is a liquid that fills the space between the first electrode 33A and the second electrode 33B, so the gap between the electrodes 33A, the electrode 33B and the dielectric constituting the capacitor 33 can be eliminated. As a result, it can be eliminated The arc discharge that may occur in the gap between the electrode 33A, the electrode 33B, and the dielectric substance eliminates the damage of the capacitor 33 caused by the arc discharge. In addition, regardless of the gap, the capacitance value can be set with high accuracy based on the distance between the first electrode 33A and the second electrode 33B, the facing area, and the relative permittivity of the dielectric substance of the liquid. Furthermore, a structure for pressing the electrodes 33A, 33B, and the dielectric substance to fill the gap may not be required, so that the complication of the antenna peripheral structure caused by the pressing structure and the resulting plasma P can be prevented. Deterioration of uniformity.

介電質為於金屬管31的內部流動的冷卻液,故而可利用冷卻液CL將容易因電漿生成時產生的熱而成為高溫的金屬管31冷卻,故而可防止天線3自身的破損或其周邊結構的破損等,從而可穩定地產生電漿P。 The dielectric substance is a cooling liquid flowing inside the metal tube 31, so the cooling liquid CL can be used to cool the metal tube 31, which tends to become high temperature due to the heat generated during plasma generation, so that the antenna 3 itself can be prevented from being damaged or The damage of the peripheral structure, etc., can cause the plasma P to be stably generated.

而且,由於將該冷卻液CL用作電容器33的介電質,故而可將電容器33冷卻並且抑制其靜電電容的意外的變動。 Furthermore, since the coolant CL is used as the dielectric of the capacitor 33, it is possible to cool the capacitor 33 and suppress unexpected changes in its electrostatic capacitance.

進而,藉由一邊利用調溫機構141將冷卻液CL調整為一定溫度一邊用作介電質,可抑制由溫度變化導致的相對介電常數的變化,從而可抑制隨此產生的靜電電容的變化。 Furthermore, by adjusting the coolant CL to a constant temperature by the temperature adjustment mechanism 141 as a dielectric material, the change in the relative dielectric constant caused by the temperature change can be suppressed, thereby suppressing the change in the electrostatic capacitance generated therewith. .

<其他變形實施形態> <Other Modified Embodiments>

再者,本發明不限於所述實施形態。 In addition, the present invention is not limited to the above-mentioned embodiment.

例如,作為金屬密封件S,於所述實施形態中使用雙套圈型,但亦可如圖4所示般使用金屬墊圈S4。 For example, as the metal seal S, the double ferrule type is used in the above-mentioned embodiment, but the metal gasket S4 may be used as shown in FIG. 4.

若加以更具體說明,則此處於金屬管31的端部設置凸緣F,金屬密封件S具備配置於該凸緣F與承接構件Z之間的例如圓環 狀的金屬墊圈S4、及用以將金屬墊圈S4向承接構件Z壓入的壓入構件S3。 More specifically, a flange F is provided here at the end of the metal pipe 31, and the metal seal S includes, for example, an annular ring arranged between the flange F and the receiving member Z. A metal washer S4 having a circular shape, and a press-fitting member S3 for press-fitting the metal washer S4 to the receiving member Z.

而且,壓入構件S3以與所述實施形態同樣地螺合於承接構件Z的方式構成,並且具有按壓凸緣F的背面X4的按壓面Y4。 In addition, the press-fitting member S3 is configured to be screwed to the receiving member Z in the same manner as in the above-mentioned embodiment, and has a pressing surface Y4 that presses the back surface X4 of the flange F.

根據所述構成,藉由使壓入構件S3螺合於承接構件Z,而壓入構件S3的按壓面Y4按壓凸緣F的背面X4,將金屬管31向承接構件Z沿軸向壓入。由此,於金屬管31的凸緣F與承接構件Z之間將金屬墊圈S4壓潰,將該些構件之間保持於氣密或液密。 According to the above configuration, by screwing the pressing member S3 to the receiving member Z, the pressing surface Y4 of the pressing member S3 presses the back surface X4 of the flange F, and the metal pipe 31 is pressed into the receiving member Z in the axial direction. Thereby, the metal gasket S4 is crushed between the flange F of the metal pipe 31 and the receiving member Z, and these members are kept airtight or liquid-tight.

另外,作為金屬密封件S,亦可如圖5所示般使用金屬O形環S5,雖未圖示,亦可使用單一的套圈。 In addition, as the metal seal S, a metal O-ring S5 may be used as shown in FIG. 5, and although not shown, a single ferrule may be used.

進而,所述實施形態中,第一被按壓面X1、第一按壓面Y1、第二被按壓面X2、第二按壓面Y2、第三被按壓面X3及第三按壓面Y3均為相對於天線3的軸向而傾斜的傾斜面,但亦可為該些面X1~X3、Y1~Y3的一部分與天線3的軸向垂直的面。 Furthermore, in the aforementioned embodiment, the first pressed surface X1, the first pressing surface Y1, the second pressed surface X2, the second pressing surface Y2, the third pressed surface X3, and the third pressing surface Y3 are all opposite to The inclined surface of the antenna 3 inclined in the axial direction, but may be a surface in which a part of the surfaces X1 to X3 and Y1 to Y3 are perpendicular to the axial direction of the antenna 3.

所述實施形態中,藉由焊接而將絕緣管與承接構件不可分離地一體化,但亦可藉由與焊接不同的接合方法而一體化。進而,絕緣管與承接構件未必一定要一體化,只要可確保該些構件之間的密封性,則亦可藉由例如螺旋緊固等而將承接構件相對於絕緣管可裝卸地設置。 In the above-mentioned embodiment, the insulating tube and the receiving member are inseparably integrated by welding, but they may be integrated by a joining method different from welding. Furthermore, the insulating tube and the receiving member do not necessarily need to be integrated. As long as the sealing between these members can be ensured, the receiving member may be detachably installed with respect to the insulating tube by, for example, screw fastening.

所述實施形態的電漿處理裝置100中,天線3配置於基板W的處理室內,但亦可如圖6所示,將天線3配置於處理室18外。於該情形時,多個天線3於真空容器2內配置於藉由介電質 窗19而與處理室18分隔的天線室20。再者,天線室20藉由真空排氣裝置6而進行真空排氣。若為該電漿處理裝置100,則可分別控制處理室18的壓力等條件與天線室20的壓力等條件,可有效率地產生電漿P並且可有效率地處理基板W。 In the plasma processing apparatus 100 of the above-mentioned embodiment, the antenna 3 is arranged in the processing chamber of the substrate W. However, as shown in FIG. 6, the antenna 3 may be arranged outside the processing chamber 18. In this case, the multiple antennas 3 are arranged in the vacuum container 2 by the dielectric The antenna room 20 is separated from the processing room 18 by the window 19. Furthermore, the antenna chamber 20 is evacuated by the vacuum exhaust device 6. With this plasma processing apparatus 100, the conditions such as the pressure of the processing chamber 18 and the conditions such as the pressure of the antenna chamber 20 can be separately controlled, the plasma P can be efficiently generated, and the substrate W can be efficiently processed.

此外,金屬管及絕緣管呈具有一個內部流路的管狀,但亦可具有兩個以上的內部流路,或具有分支的內部流路。另外,金屬管或絕緣管亦可為實心。 In addition, the metal pipe and the insulating pipe have a tubular shape with one internal flow path, but they may also have two or more internal flow paths or branched internal flow paths. In addition, the metal tube or insulating tube may also be solid.

所述實施形態的電極中,伸出部為圓筒狀,但亦可為其他方筒狀,亦可為平板狀或者經彎曲或折曲的板狀。 In the electrode of the above-mentioned embodiment, the projecting portion is cylindrical, but it may be other square cylindrical shapes, flat plates, or curved or bent plates.

此外,本發明不限於所述實施形態,當然可於不偏離其主旨的範圍內進行各種變形。 In addition, the present invention is not limited to the above-mentioned embodiment, and of course various modifications can be made within a range that does not deviate from the gist.

3‧‧‧天線 3‧‧‧Antenna

31A‧‧‧第一金屬管 31A‧‧‧The first metal tube

31B‧‧‧第二金屬管 31B‧‧‧Second metal tube

31t‧‧‧端部 31t‧‧‧End

31x、32x‧‧‧流路 31x、32x‧‧‧Flow path

32‧‧‧絕緣管(中空絕緣體) 32‧‧‧Insulation tube (hollow insulator)

33‧‧‧電容器 33‧‧‧Capacitor

33A‧‧‧第一電極 33A‧‧‧First electrode

33B‧‧‧第二電極 33B‧‧‧Second electrode

33x‧‧‧主流路 33x‧‧‧Main Road

321‧‧‧埋頭孔部 321‧‧‧Counterbore

CL‧‧‧冷卻液(液體的介電質) CL‧‧‧Cooling fluid (liquid dielectric)

N1‧‧‧外螺紋部 N1‧‧‧External thread

N2‧‧‧內螺紋部 N2‧‧‧Internal thread

S‧‧‧金屬密封件 S‧‧‧Metal seal

S1‧‧‧第一套圈 S1‧‧‧First loop

S2‧‧‧第二套圈 S2‧‧‧Second ring

S3‧‧‧壓入構件 S3‧‧‧Press-in component

X1‧‧‧第一被按壓面 X1‧‧‧The first pressed surface

Z‧‧‧承接構件 Z‧‧‧Receiving component

Z1‧‧‧一端部 Z1‧‧‧One end

Z2‧‧‧另一端部 Z2‧‧‧The other end

Z3‧‧‧大徑部 Z3‧‧‧Large diameter department

Za‧‧‧抵接面 Za‧‧‧Abutting surface

Zh‧‧‧貫通孔 Zh‧‧‧Through hole

Claims (7)

一種天線,用於流動高頻電流而產生電漿,包括:至少一對筒狀的導體元件;中空絕緣體,設於彼此相鄰的所述導體元件之間,與所述導體元件的內部空間連通;以及金屬密封件,分別設於所述一對導體元件及所述中空絕緣體之間,且所述天線更包括:承接構件,設於所述中空絕緣體的兩端部,且供所述金屬密封件接觸,所述承接構件包含強度較所述中空絕緣體更強的材質。 An antenna for generating plasma by flowing high-frequency current, comprising: at least a pair of cylindrical conductor elements; a hollow insulator, which is arranged between the conductor elements adjacent to each other and communicates with the inner space of the conductor element And metal seals, respectively provided between the pair of conductor elements and the hollow insulator, and the antenna further includes: a receiving member provided at both ends of the hollow insulator, and for the metal seal The receiving member includes a material with stronger strength than the hollow insulator. 如申請專利範圍第1項所述的天線,更包括:電容元件,與所述一對導體元件電性串聯連接,所述電容元件具有:第一電極,與所述一對導體元件的其中一者電性連接,並且穿過所述中空絕緣體的內部而延伸至所述一對導體元件的另一者側;及第二電極,與所述一對導體元件的另一者電性連接,並且穿過所述中空絕緣體的內部而延伸至所述一對導體元件的其中一者側,與所述第一電極相向,所述第一電極設於其中一個所述承接構件,所述第二電極設於另一個所述承接構件。 The antenna described in item 1 of the scope of patent application further includes: a capacitor element electrically connected in series with the pair of conductor elements, the capacitor element having: a first electrode, and one of the pair of conductor elements Is electrically connected to the hollow insulator and extends to the other side of the pair of conductor elements; and a second electrode is electrically connected to the other of the pair of conductor elements, and Passing through the inside of the hollow insulator and extending to one side of the pair of conductor elements, facing the first electrode, the first electrode is provided on one of the receiving members, and the second electrode Set on the other said receiving member. 如申請專利範圍第2項所述的天線,其中所述承接構件焊接於所述中空絕緣體。 The antenna described in item 2 of the scope of patent application, wherein the receiving member is welded to the hollow insulator. 如申請專利範圍第1項至第3項中任一項所述的天線,其中所述金屬密封件具有:第一套圈,接觸所述承接構件;第二套圈,配置於較所述第一套圈更靠所述導體元件側;及壓入構件,將所述第二套圈沿軸向而向所述第一套圈側壓入,並且螺合於所述承接構件。 The antenna according to any one of items 1 to 3 in the scope of the patent application, wherein the metal seal has: a first ferrule that contacts the receiving member; and a second ferrule that is disposed in comparison with the first ferrule. The ferrule is closer to the conductor element side; and a press-fitting member for press-fitting the second ferrule toward the first ferrule in the axial direction, and is screwed to the receiving member. 如申請專利範圍第2項或第3項所述的天線,其中所述電容元件的介電質為將所述第一電極及所述第二電極之間的空間充滿的液體。 According to the antenna described in item 2 or item 3 of the scope of patent application, the dielectric substance of the capacitor element is a liquid that fills the space between the first electrode and the second electrode. 如申請專利範圍第5項所述的天線,其中所述介電質為於所述一對導體元件的內部流動的冷卻液。 The antenna according to claim 5, wherein the dielectric substance is a cooling liquid flowing inside the pair of conductor elements. 一種電漿處理裝置,包括:如申請專利範圍第1項至第6項中任一項所述的天線;真空容器,於內部或外部配置有所述天線;以及高頻電源,對所述天線施加高頻電流。A plasma processing device, comprising: the antenna according to any one of items 1 to 6 of the scope of the patent application; a vacuum container in which the antenna is arranged inside or outside; and a high-frequency power supply for the antenna Apply high frequency current.
TW108109115A 2018-03-19 2019-03-18 Antenna and plasma processing device TWI723353B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018050769A JP7101335B2 (en) 2018-03-19 2018-03-19 Antenna and plasma processing equipment
JP2018-050769 2018-03-19

Publications (2)

Publication Number Publication Date
TW201940015A TW201940015A (en) 2019-10-01
TWI723353B true TWI723353B (en) 2021-04-01

Family

ID=67987297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108109115A TWI723353B (en) 2018-03-19 2019-03-18 Antenna and plasma processing device

Country Status (3)

Country Link
JP (1) JP7101335B2 (en)
TW (1) TWI723353B (en)
WO (1) WO2019181776A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736015B (en) * 2020-12-31 2024-09-20 拓荆科技股份有限公司 Device for adjusting plasma curve in processing chamber and control method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011041087A2 (en) * 2009-09-29 2011-04-07 Applied Materials, Inc. Inductively-coupled plasma (icp) resonant source element
US20110253674A1 (en) * 2008-07-14 2011-10-20 New Optics, Ltd. Method and Chamber for Inductively Coupled Plasma Processing for Cylinderical Material With Three-Dimensional Surface
TWI580324B (en) * 2014-10-01 2017-04-21 日新電機股份有限公司 Antenna for plasma generation and plasma processing device having the same
TWI584343B (en) * 2015-02-13 2017-05-21 日新電機股份有限公司 Plasma processing device
US20170370504A1 (en) * 2015-01-28 2017-12-28 Nissin Electric Co., Ltd. Pipe holding connection structure and high frequency antenna device including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001288573A (en) * 2000-04-05 2001-10-19 Canon Inc Method and apparatus for forming deposited film
KR101073833B1 (en) * 2009-09-10 2011-10-14 주성엔지니어링(주) Plasma processing apparatus
JP5713354B2 (en) * 2012-02-07 2015-05-07 株式会社日本製鋼所 Plasma generator
US9472378B2 (en) 2013-10-04 2016-10-18 Applied Materials, Inc. Multiple zone coil antenna with plural radial lobes
JP5874853B1 (en) 2015-04-17 2016-03-02 日新電機株式会社 Plasma processing equipment
JP2017033788A (en) * 2015-08-03 2017-02-09 日新電機株式会社 Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110253674A1 (en) * 2008-07-14 2011-10-20 New Optics, Ltd. Method and Chamber for Inductively Coupled Plasma Processing for Cylinderical Material With Three-Dimensional Surface
WO2011041087A2 (en) * 2009-09-29 2011-04-07 Applied Materials, Inc. Inductively-coupled plasma (icp) resonant source element
TWI580324B (en) * 2014-10-01 2017-04-21 日新電機股份有限公司 Antenna for plasma generation and plasma processing device having the same
US20170370504A1 (en) * 2015-01-28 2017-12-28 Nissin Electric Co., Ltd. Pipe holding connection structure and high frequency antenna device including the same
TWI584343B (en) * 2015-02-13 2017-05-21 日新電機股份有限公司 Plasma processing device

Also Published As

Publication number Publication date
JP2019164896A (en) 2019-09-26
TW201940015A (en) 2019-10-01
JP7101335B2 (en) 2022-07-15
WO2019181776A1 (en) 2019-09-26

Similar Documents

Publication Publication Date Title
JP6471515B2 (en) Pipe holding connection structure and high-frequency antenna device including the same
TWI689967B (en) Antenna for generating plasma, plasma processing device with the antenna, and antenna structure
KR101480738B1 (en) Annular baffle
JP6341329B1 (en) Antenna for generating plasma and plasma processing apparatus including the same
CN110709533B (en) Sputtering device
TWI708526B (en) Antenna and plasma processing device
JP6931461B2 (en) Antenna for plasma generation, plasma processing device and antenna structure equipped with it
TWI723353B (en) Antenna and plasma processing device
JP6996096B2 (en) Plasma processing equipment
US7056388B2 (en) Reaction chamber with at least one HF feedthrough
JP2017010820A (en) Plasma processing device
WO2018151114A1 (en) Antenna for generating plasma, and plasma treatment device and antenna structure provided with antenna for generating plasma
JP2025109074A (en) Antenna for generating plasma and plasma processing apparatus equipped with same
JP2024100104A (en) Antenna device and plasma processing device
JP7028001B2 (en) Film formation method
TW202549421A (en) Plasma treatment device
JP2018156763A (en) Antenna for plasma generation and plasma processing apparatus including the same