TWI722560B - Packaging structure for directly deriving thermal energy of electronic components - Google Patents

Abstract

Provides a packaging structure that directly derives the thermal energy of electronic components, which mainly includes an insulating layer, an electronic component and two extraction electrodes; the electronic component is a heating element or a thermoelectric separation element, and one of the extraction electrodes and the electronic component are integrated in a stacked manner and constitute each other Electrically connected, the other lead electrode is separated from the overlapped lead electrode and electronic component at an appropriate distance, and the other lead electrode is electrically connected to the electronic component through an electrical connection. The insulating layer simultaneously encapsulates and fixes the electronic component and the two electronic components. Leading electrode, the gap can be filled by the insulating layer. The outer side of the two leading electrodes is exposed to the insulating layer, so that the leading electrode can be directly fixed on the external heat sink, and the heat can be dissipated by direct conduction. , And can effectively improve the heat dissipation efficiency.

Description

Packaging structure for directly deriving thermal energy of electronic components

A device packaging structure, especially a packaging structure that directly derives the thermal energy of an electronic element. More specifically, the thermal energy and electric energy of the element are shunted by a special process and structural design to achieve a direct heat dissipation and conductive packaging structure. In addition, the chip is isolated from the lead electrode by an insulating material to achieve an insulating effect. The package structure element can realize heat dissipation by direct conduction, and can effectively improve the heat dissipation efficiency.

Most of the existing heat generating and thermoelectric separation component packaging structures use metal substrates or ceramic substrates for chip or component packaging. The metal substrate needs to be added with an insulating layer to isolate the circuit and the heat dissipation substrate, which will increase the thermal resistance.

Please refer to FIG. 1, which is a schematic diagram of a conventional thermoelectric separation device packaging structure. As shown in Figure 1, the conventional thermoelectric separation element packaging structure includes a metal layer 1a, an insulating layer 2a, and heat generating and thermoelectric separation elements such as a chip 3a from bottom to top. The positive and negative electrodes on the top and bottom surfaces of the chip 3a are combined with each other. The two external electrodes 5a, 5b are connected to the two external electrodes 5a, 5b. The two external electrodes 5a, 5b are arranged on the insulating layer 2a and separated by a distance. Through the arrangement of the insulating layer 2a, the two external electrodes 5a, 5b are not short-circuited.

However, since the insulating layer 2a is arranged between the metal layer 1a and the wafer 3a, when the wafer 3a is working, the heat generated by the wafer 3a must be conducted to the metal layer 1a through the insulating layer 2a. However, the insulating layer 2a has no better thermal conductivity effect than In order to improve the thermal conductivity of the insulating layer, although aluminum oxide, aluminum nitride and diamond-like film (DLC) and other materials with good thermal conductivity can be used as the insulating layer, the composition of such materials This is also quite high; in addition, although this kind of material has better thermal conductivity, it is still an insulating material, and the material properties of the external electrode using metal materials are still different. Therefore, the structure and material properties of the combination of two different materials are The reliability is still insufficient. Therefore, there is a need for a thermoelectric separation device package structure that can reduce the material cost and improve the heat dissipation capability by eliminating the thermal resistance of the device.

In addition, in the prior art, multiple heating elements (such as integrated circuits) and multiple electronic components such as thermoelectric separation elements are also electrically connected to the circuit board at the same time, and the surface of the circuit board will also be covered with an insulating layer such as solder resist green paint. The problem that this will cause is just as described in the previous paragraph, that is, heat energy is accumulated on the circuit board, and the heat energy accumulated on the circuit board affects the electronic components, and finally causes the electronic components to overheat and affect their working performance.

A packaging structure that directly derives the thermal energy of electronic components is provided, and a special manufacturing process and structural design are used to split the thermal energy and electrical energy to achieve a package structure that directly conducts heat.

The electronic components and the lead electrodes are separated and fixed by insulating materials; part of the insulating layer serves as a barrier that can block the first electrode layer and the second electrode layer, so that the thermoelectrically separated component packaging structure can not penetrate the insulating layer. Directly or indirectly fixed on the heat sink, so that the thermal energy of the electronic component can be directly or instantly conducted to the heat sink, so the additional thermal resistance between the electronic component and the heat sink is subtracted, so as to reduce the material cost and increase The package structure of heat generation and thermoelectric separation component reliability of package components.

To achieve the above objective, the proposed exemplary technical means include: an insulating layer, an electronic component, and two lead electrodes (P pole and N pole). The electronic component can be a heating element or a thermoelectric separation element; the electronic component is stacked. An electrical connection is formed on a lead electrode, the heat generated by the electronic component is directly conducted to the lead electrode, and the other lead electrode is spaced apart from the lead electrode and the electronic component. An electrical connection is formed with the chip through an electrical connection. The insulating layer fixes the electronic component and the two lead electrodes at the same time, and the outer side of the two lead electrodes and the side of the thermoelectric separation element that generate heat It is not covered by the insulating layer.

In one embodiment, the gap can be filled by a part of the insulating layer, which acts as a barrier for blocking the first electrode layer and the second electrode layer.

In one embodiment, the extraction electrode has at least a single-layer structure, and the extraction electrode and the heating or thermoelectric separation element are fixed on the extraction electrode circuit by welding or other adhesion methods.

In one embodiment, the sides of the two lead electrodes that are not covered by the insulating layer are coplanar, which facilitates adhesion to the external heat sink.

In one embodiment, the electrical connection method is wire bonding, or the chip and the lead electrode are electrically connected by stacking conductive metals (blocks), and the conductive parts are connected and fixed by welding or adhesion. .

In a preferred embodiment, it further includes a conductive pad opposite to the other lead electrode, the conductive pad is disposed on the conductive elements, and the outer side of the conductive pad is not exposed to the insulating layer Cover, a conductive column is further arranged on the lead electrode, the conductive column is separated from the thermoelectric separation element, the bottom end of the conductive column is fixed and electrically connected to the lead electrode, and the top end of the conductive column is at least protected from The insulating layer is covered by this, so that a part of the lead electrode can be exposed on both sides of the insulating layer to facilitate connection with external circuits or components.

1: solar wafer

2: Insulating thermal board

11: N-type electrode

13: P-type electrode

31: The first electrode layer

33: Welding adhesive layer

41: second electrode layer

5: Insulation layer

61, 63, 65: conductive parts

67: Conductive column

7: circuit board

71, 73: External electrodes

75: electronic components

8: heat sink

1a: Metal layer

2a: Insulation layer

3a: chip

5a, 5b: external electrodes

FIG. 1 is a schematic diagram of a package structure of a thermoelectric separation element in the prior art.

Fig. 2 is a schematic diagram showing a packaged solar wafer according to the described embodiment.

Fig. 3 is a schematic diagram showing a conductive member according to the described embodiment.

4 is a schematic diagram showing two electrodes respectively located on both sides of the insulating layer according to the described embodiment.

FIG. 5 is a schematic diagram showing an integrated package according to the described embodiment.

FIG. 6 is a schematic diagram showing that a heat dissipation device is further provided according to the structure of FIG. 5.

FIG. 7 is a schematic diagram showing an integrated package in which the first electrode layer is directly attached to the heat dissipating device and is not provided with an insulating and thermally conductive plate according to the described embodiment.

FIG. 8 is a schematic diagram showing that a heat dissipation device is further provided according to the structure of FIG. 7.

The following is a more detailed description of the implementation of the present invention in conjunction with the diagrams and component symbols, so that those who are familiar with the art can implement it after studying this specification.

The provided thermoelectric separation element packaging structure includes an insulating layer, an electronic element and two lead electrodes, wherein the electronic element is a heating element or a thermoelectric separation element.

One of the lead-out electrodes and the electronic components are stacked together and form an electrical connection with each other, the other lead-out electrode and the stacked lead-out electrodes and electronic components are separated by an appropriate distance, and the other lead-out electrode is electrically connected through The method forms an electrical connection with the electronic components. The insulating layer encapsulates and fixes the chip and the two lead electrodes at the same time. The gap can be filled by the material of the insulating layer. The outer side of the two lead electrodes is exposed on the insulating layer.

Heating elements are processors, memory, control elements or other heating elements; thermoelectric separation elements are solar cells, diodes, metal oxide semiconductor field effects (MOSFET) Insulated gate bipolar transistor (IGBT), light emitting diode (LED) or other thermoelectric separation components.

Refer to FIG. 2, which is a schematic diagram showing a packaged solar chip according to the described embodiment. As shown in the embodiment of FIG. 2, the electronic component uses the solar wafer 1 as an illustrative example. The top and bottom surfaces of the solar wafer 1 have N-type electrodes 11 and P-type electrodes 13 respectively; if the bottom surface of the solar wafer 1 is solar The main heating surface of the chip 1 during operation, the first electrode layer 31 (lead electrode) can be electrically connected to the P-type electrode 13 of the solar chip 1 through the welding adhesive layer 33; the lead electrode can be a single electrode as shown in FIG. The first electrode layer 31 of a layer structure; in other words, the first electrode layer 31 is a single-layer structure in the form of a sheet-like body, a plate-like body, or a block-like body.

Preferably, the first electrode layer 31 and the solar chip 1 are in face-to-face contact to dissipate heat through a sufficient heat dissipation area. Special attention should be paid to the P-type electrode 13 and the first electrode layer 31 on the main heating surface of the solar chip 1. There is no dielectric layer between them, but they can be electrically connected through the entire surface welding or through the entire surface adhesion to form an electrical connection, that is, the first electrode layer 31 and the solar chip 1 can be directly or indirectly connected In this way, the heat generated by the solar chip is directly transferred to the first electrode layer.

The solar chip 1 and the first electrode layer 31 formed by the bonding need to be separated from the second electrode layer 41 by a distance, and the second electrode layer 41 and the N-type electrode 11 on the top surface of the solar chip 1 are connected by wire bonding. The electrical connection is formed by the sexual connection.

The above-mentioned solar wafer 1 and the first electrode layer 31 and the second electrode layer 41 are all encapsulated into one body by the insulating layer 5, and the space between the first electrode layer 31 and the second electrode layer 41 is also occupied by the insulating layer 5, and An insulating layer barrier is provided between the first electrode layer 31 and the second electrode layer 41 to avoid short circuits, and the first electrode layer 31 The side on the same side as the second electrode layer 41 is not covered by the insulating layer 5 and is exposed to the outside of the insulating layer 5; preferably, the side on the same side of the first electrode layer 31 and the second electrode layer 41 is It is coplanar, and is more on the same plane as the insulating layer, so as to facilitate subsequent stable bonding with the heat dissipation device.

One of the features of the package structure shown in the above embodiment is that the insulating layer 5 is used as the structural layer for fixing the solar wafer 1, the first electrode layer 31 and the second electrode layer 41 at the same time. In the first embodiment, except for the solar wafer The main heat dissipation side of the solar wafer and other parts of the solar wafer are covered by an insulating layer, but it is not limited to this. If the insulating layer does not cover the top surface of the solar wafer but it can still fix the thermoelectric separation element, it is also the object of the present invention. One of the methods of protection.

In addition to the encapsulation effect, the insulating layer also uses a part of the insulating layer as a barrier to block the first electrode layer and the second electrode layer, that is, the first electrode layer and the second electrode layer except for the exposure of the first electrode layer and the second electrode layer Except for the surface, other parts of the first electrode layer and the second electrode layer are covered and fixed by the insulating layer.

The present invention directly fixes the solar wafer on the metal electrode layer through the welding adhesive layer. Obviously, the bondability of the same series of materials is usually better than that of heterogeneous materials. Therefore, the present invention uses the first (second) electrode layer to bond to the metal. The heat dissipation base can effectively remove the thermal energy of the electronic components and improve the reliability of the package structure.

Refer to FIG. 3, which is a schematic diagram showing a conductive member according to the described embodiment. The arrangement principle of the second embodiment is basically the same as that of the first embodiment, except that the second embodiment provides an electrical connection method different from that of the first embodiment. The first embodiment uses wires for wire bonding, and the second embodiment For example, the second electrode layer 41 is electrically connected to the N-type electrode 11 of the solar wafer 1 through one or more conductive members.

If multiple conductive members 61, 63 are used, they can be electrically connected to the N-type electrode 11 of the solar wafer 1 by stacking the multiple conductive members 61, 63 on the second electrode layer 41, so there will be one of them The conductive member 61 is to be electrically connected to the N-type electrode 11 of the solar wafer 1, and the other conductive member 63 is overlapped between the conductive member 61 and the N-type electrode 11, except for the connection between the conductive members 61 and 63 and the wafer electrode. In addition, the plurality of conductive members 61, 63 should be separated from the solar wafer 1 (together with the first electrode layer) by an appropriate distance.

Specifically, if two conductive members 61, 63 as shown in FIG. 3 are used, the conductive member 61 directly disposed on the second electrode layer 41 needs to have an appropriate height, so that the conductive member 61 and the second electrode The total height of the layer 41 can be the same height as the solar wafer. It is better to have the same height as the solar wafer, but it is not limited to this, that is, it can be as close as possible to the same height. Even if the height is not equal, it can be provided with a suitable shape of conduction. The conductive member 61 is arranged on the conductive member 61 to complete the overlap; and the conductive member 63 arranged on the conductive member 61 has an appropriate horizontal length, so that the two ends of the conductive member 63 can be fixed to the solar wafer 1 and the conductive member 61, respectively. They are connected and fixed to each other by welding the adhesive layer 33.

Referring to Figure 4, Figure 4 is a schematic diagram showing two electrodes respectively located on both sides of the insulating layer according to the described embodiment. In the foregoing two embodiments, the two electrodes of the solar wafer are both connected to one side of the insulating layer at the same time ( In the figure, it is the bottom side). In the third embodiment, it is further provided that the two electrodes of the solar wafer are connected to the two sides of the insulating layer.

In the third embodiment, in addition to the stacked conductive members 61 and 63 on the second electrode layer 41, a conductive member 65 is further provided. The conductive member 65 is disposed on the conductive member 63, and a part of the conductive members 63, 65 The part is beyond the top surface of the insulating layer 5, and the conductive members 63 and 65 are also connected and fixed by welding the adhesive layer.

A conductive pillar 67 is further provided on the first electrode layer 31. The conductive pillar 67 needs to be separated from the solar chip 1 by a distance. This distance can be filled by a part of the insulating layer. One end of the conductive pillar 67 is fixed to the first electrode layer. On the electrode layer, the other end of the conductive member 67 is at least not covered by the insulating layer. Preferably, the top side of the conductive member may be flush or exceed the top surface of the insulating layer; in the third embodiment, the first The area of an electrode layer 31 is larger than that of the solar chip, so the portion of the first electrode layer 31 that exceeds the solar chip 1 can be used for the conductive pillar 67 to be arranged.

Although the foregoing embodiments are all about the packaging of a single electronic component, they are not limited to the packaging of a single electronic component, and a circuit board can be used to achieve a series-parallel circuit layout application of multiple electronic components.

Referring to FIG. 5, FIG. 5 is a schematic diagram showing a direct heat conduction structure of parts and components of an insulating layer package circuit board according to the described embodiment. As shown in Figure 5, the packaging structure that directly derives the thermal energy of the electronic component includes an insulating layer 5, a direct thermal conduction structure for the component, and a circuit board 7. The circuit board 7 is adjacent to the direct thermal conduction structure for the component; The middle is the thermoelectric separation wafer.

The direct heat conduction structure of the element is as in the previous embodiment, and also includes thermoelectric separation wafers such as the solar wafer 1 and the first electrode layer, the second electrode layers 31, 41 (two lead electrodes), the solar wafer 1 and the first electrode layer, the second electrode The arrangement between the layers 31 and 41 is substantially the same as the previous embodiment, so I will not repeat it here; but the second electrode layer 41 (another lead electrode) is arranged on the circuit board 7, for example, the second electrode layer 41 may be a circuit. Conductive pads, conductive bumps or contacts on the board 7.

The circuit board 7 also has two external electrodes 71, 73. The external electrode 71 and the first electrode layer 31 are indirectly or directly electrically connected by wire bonding or other electrical connection methods; the second electrode layer 41 is An electrical connection is formed by the wire line on the circuit board 7 and the external electrode 73.

The insulating layer 5 encapsulates and fixes the solar chip 1, the first electrode layer 31, the second electrode layer 41 and the circuit board 7 at the same time, but the insulating layer 5 does not cover the two external electrodes 71, 73 of the circuit board 7 and the circuit board 7 is far away On the side of the insulating layer and the side of the first electrode layer 31 away from the insulating layer.

The circuit board 7 can also be provided with various electronic components 75 that have low power or are not easy to accumulate heat.

In an embodiment, the direct heat conduction structure of the element can be arranged in the opening or notch of the circuit board 7; or more than two circuit boards can also be arranged. In this case, an external electrode is provided on each of the two circuit boards.

As shown in FIG. 5, the direct heat conduction structure of the element further includes an insulating heat-conducting plate 2. The insulating heat-conducting plate 2 is arranged under the first electrode layer 31 to dissipate heat energy; in addition, the insulating heat-conducting plate and the 8-circuit board are not affected by The side covered by the insulating layer is coplanar.

Refer to FIG. 6, which is a schematic diagram showing a further arrangement of a heat dissipation device according to the structure of FIG. 5. As shown in FIG. 6, FIG. 6 further provides a heat dissipation device 8. The heat dissipation device 8 is attached to the insulating heat conducting plate 2 away from the insulating layer 5, or the heat sink 8 is further attached to the side of the circuit board 7 away from the insulating layer 5.

Referring to FIGS. 7 and 8, the structures of FIGS. 7 and 8 are roughly the same as those of FIGS. 5 and 6, except that the first electrode layer 31 of FIGS. 7 and 8 is directly attached to the heat sink 8, that is, it is not An insulating heat-conducting plate 2 needs to be provided; the aforementioned heat dissipation device 8 may be a heat-dissipating metal plate.

In addition to integrating thermoelectric separation components and heating components, other control components can also be integrated, and the design and application of smart power integration modules can be achieved through electrical connections.

The above descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to restrict the present invention in any form. Therefore, any modification or change related to the present invention is made under the same spirit of the invention. , Should still be included in the scope of the present invention's intention to protect.

1 Chip 11 N-type electrode 13 P-type electrode 31 The first electrode layer 33 Welding adhesive layer 41 The second electrode layer 5 Insulation layer

Claims (14)

A thermoelectric separation component packaging structure, comprising: an insulating layer, at least one electronic component and two lead electrodes, at least one heating side of the at least one electronic component is substantially in contact with and fixed on a lead electrode to form an electrical connection, The heat generated by the at least one electronic component is directly conducted to the lead electrode, and the other lead electrode is separated from the lead electrode and the at least one electronic component by a distance and forms electrical properties with the at least one electronic component through an electrical connection. Connected, the insulating layer encapsulates and fixes the at least one electronic component and the two lead electrodes at the same time, and the outer side of the two lead electrodes and the side of the at least one electronic component that generates heat are not covered by the insulating layer , Wherein the at least one electronic element is a heating element or a thermoelectric separation element; wherein, the electrical connection method is to form an electrical connection between the at least one electronic element and the other lead-out electrode through a stacking manner of a plurality of conductive elements, the The conductive parts are connected and fixed by welding or adhesive; among them, it further includes a conductive pad opposite to the other lead electrode, the conductive pad is arranged on the conductive parts, and the conductive pad faces outward One side is not covered by an insulating layer. A conductive pillar is further provided on the lead electrode. The conductive pillar is separated from the at least one electronic component by a distance. The bottom end of the conductive pillar is fixed and electrically connected to the lead electrode. The top of the conductive pillar is at least not covered by the insulating layer. The device package structure for thermoelectric separation according to claim 1, wherein the gap can be filled by the insulating layer. The device package structure for thermoelectric separation according to claim 1, wherein the extraction electrode has at least a single-layer structure. The thermoelectric separation device package structure according to claim 1 or 3, wherein the lead electrode and the thermoelectric separation device are connected and fixed by a solid die bonding method such as welding, silver sintering, or ultrasonic bonding. The device package structure for thermoelectric separation according to claim 1, wherein the sides of the two lead electrodes that are not covered by the insulating layer are coplanar. The device package structure for thermoelectric separation according to claim 1, wherein the electrical connection method is wire bonding, welding, etc. to achieve electrical connection. The device package structure for thermoelectric separation according to claim 1, wherein the electrical connection is through a conductive member and the electrical connection is made by wire bonding, soldering, or the like. The device package structure for thermoelectric separation according to claim 1, wherein the distance can be occupied by a part of the insulating layer. A thermoelectric separation component packaging structure, which further comprises at least two circuit boards, the insulating layer simultaneously encapsulates and fixes the electronic components and the at least one circuit board, and the electronic components are formed by the at least one circuit board Electrical connection. A thermoelectric separation component packaging structure, comprising: an insulating layer; a component direct heat conduction structure, comprising at least one electronic component and two lead electrodes, at least one heating side of the at least one electronic component is substantially in contact with and fixed to a lead electrode And the lead electrode is electrically connected to the positive electrode of the at least one electronic component, and the at least The heat generated by an electronic component is directly conducted to the lead electrode, and the other lead electrode is separated from the lead electrode and the at least one electronic component by a distance, and forms an electrical connection with the negative electrode of the at least one electronic component through an electrical connection. Connection; and at least one circuit board, adjacent to the component direct heat conduction structure, the other lead electrode is provided on the at least one circuit board, the at least one circuit board has two external electrodes, the two external electrodes through the at least The lead wires of a circuit board are electrically connected to the two lead electrodes; wherein the insulating layer simultaneously encapsulates and fixes the at least one electronic component, the two lead electrodes, and parts of the at least one circuit board, but the insulating layer does not cover Two external electrodes of the at least one circuit board. The device package structure for thermoelectric separation according to claim 9, wherein the direct heat conduction structure for the element further comprises an insulating heat-conducting plate, and the insulating heat-conducting plate is arranged under the lead electrode. The device package structure for thermoelectric separation according to claim 10, wherein the insulating heat-conducting plate and the side of the at least one circuit board not covered by the insulating layer are coplanar. The device package structure with thermoelectric separation according to claim 10, which further comprises a heat dissipation metal plate, the heat dissipation metal plate is attached to one side of the insulating and heat-conducting plate, or is attached to the insulating and heat-conducting plate and the at least one surface of the insulating heat-conducting plate. The same side of the circuit board. The device package structure for thermoelectric separation according to claim 9, wherein the lead-out electrode and the side of the at least one circuit board not covered by the insulating layer are coplanar. The device package structure for thermoelectric separation according to claim 13, further comprising a heat-dissipating metal plate, the heat-dissipating metal plate is directly attached under the lead electrode, or the heat-dissipating metal plate is attached to the lead electrode and the lead electrode. The same side of at least one circuit board.

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