以下，對本發明之實施形態進行說明。再者，本發明並不限定於以下之實施形態，只要符合本發明之主旨，則其他實施形態亦可屬於本發明之範疇。 [玻璃基板] 本發明之第1實施形態係包含矽酸鹽玻璃之玻璃基板。並且，其特徵在於：該玻璃基板之表面之ζ電位減去藉由對該玻璃基板進行蝕刻處理而獲得之外部標準之玻璃基板之表面之ζ電位而得的值(Δζ電位)為-15 mV以上。 第1實施形態之玻璃基板例如為LCD、PDP等FPD用之玻璃基板，但並不限定於其，亦可為建築用玻璃基板、車輛用玻璃基板等。 構成該玻璃基板之玻璃只要為矽酸鹽玻璃，則組成並無特別限定，例如，於FPD用之玻璃基板之情形時，較佳為具有包含SiO2
、Al2
O3
、B2
O3
及鹼土族金屬之氧化物之組成的鋁矽玻璃。又，就抑制所形成之元件之密接性及不良之觀點而言，鋁矽玻璃之中，更佳為實質上不含有鹼金屬成分之所謂無鹼玻璃。再者，實質上不含有鹼金屬成分係指除了完全不含有鹼金屬成分以外，容許含有製造中之不可避免之成分。具體而言，玻璃組成中之鹼金屬氧化物之含量較佳為0.1質量%以下。 為了獲得玻璃基板，首先，以成為所需之組成之方式調製構成玻璃之各成分之原料，並進行加熱熔融。然後，藉由通氣、攪拌、澄清劑之添加等而將玻璃均質化，並藉由公知之浮式法、壓製法、熔融法、下拉法等，而成形為特定之厚度之板狀。繼而，進行緩冷之後，視需要進行研削、研磨等加工，而製成特定之尺寸、形狀之玻璃基板。然後，對玻璃基板之表面進行研磨之後，將其洗淨。再者，如下所述，為了於洗淨步驟中控制Δζ電位，就可利用研磨後進行之洗淨之方面而言，玻璃基板較佳為研磨之必要性高之浮法玻璃基板。 於研磨步驟中，例如，使用研磨墊，藉由包含研磨粒之研磨劑(漿料)對玻璃基板之表面進行研磨。研磨劑中所含有之研磨粒之種類並無特別限定，可使用二氧化矽、氧化鋁、氧化鈰、二氧化鈦、氧化鋯及氧化錳等粒子。就研磨效率之方面而言，較佳為氧化鈰粒子。研磨粒之平均粒徑例如較佳為0.8～1.0 μm之範圍。如此，於對玻璃基板之表面進行研磨之後將其洗淨，藉由選擇洗淨方法，可控制玻璃基板之表面之ζ電位。關於研磨後之洗淨，如下所述。 ＜Δζ電位＞ 本發明之第1實施形態之玻璃基板具有-15 mV以上之Δζ電位。此處，Δζ電位係該玻璃基板之表面之ζ電位(以下，稱為表面ζ電位)減去外部標準之玻璃基板(以下，亦稱為外部標準試樣)之表面之ζ電位(以下，稱為基準ζ電位)而得的值。即，Δζ電位係利用以下之式而求出。 Δζ電位＝表面ζ電位－基準ζ電位 表面ζ電位及基準ζ電位可藉由電泳光散射法(亦稱為雷射都卜勒法)而進行測定。測定係例如使用大塚電子股份有限公司製造之ELSZ-2000(ζ電位測定範圍：-200～200 mV)而進行。於利用上述裝置對如玻璃基板般之絕緣性之板狀試樣進行測定之情形時，使用平板用電池單元、及移動速度已知之監測粒子(經表面處理之高分子乳膠)。平板電池單元成為可使板狀試樣密接於箱狀之石英電池之上表面而一體化之構造。再者，關於測定溶劑，使用濃度10 mM(0.01 mol/L)之NaCl溶液，其pH值為5.5～6.0。並且，根據因監測粒子與板狀試樣表面之相互作用而產生之粒子的移動速度之變化，求出板狀試樣表面之ζ電位。 作為外部標準試樣，使用如下試樣：對與測定表面ζ電位之玻璃基板於同一批次製造之玻璃基板實施利用氫氟酸與鹽酸之混酸進行蝕刻處理，且對表面進行蝕刻直至特定之深度，例如，0.4 μm之深度。具體而言，將如下所述者作為外部標準試樣，其係將玻璃板與混酸之水溶液(0.5體積%HF-0.7體積%HCl)一併放入容器中，將其置於100 kHz之超音波洗淨機5分鐘，並於常溫下進行蝕刻處理而成者。並且，對此種外部標準試樣之基準ζ電位之測定係與對實施形態之玻璃基板之表面ζ電位之測定於同一天連續地進行。 外部標準試樣係例如藉由將1片玻璃基板分割成2個部分，並對一個部分實施如上所述之利用氫氟酸與鹽酸之混酸所進行之蝕刻處理而製造出來。可將該外部標準試樣之ζ電位設為基準ζ電位，將另一玻璃基板之ζ電位設為表面ζ電位，而求出Δζ電位。 本發明者等人認為，玻璃基板之表面ζ電位、與將玻璃間隔紙壓抵於玻璃基板之表面之情形時來自間隔紙之轉印異物量之間，存在某種因果關係，故而悉心地反覆進行實驗。結果發現，Δζ電位與轉印異物量存在相關關係。存在Δζ電位間接地表示玻璃基板表面之Si-OH基量之可能性，且可預測，Δζ電位越高之玻璃基板，則表面之Si-OH基量越少。並且，本發明者等人認為，玻璃基板表面之Si-OH基會成為來自間隔紙之異物之吸附點，從而思及可藉由控制Δζ電位而抑制轉印異物量。 關於本發明之第1實施形態之玻璃基板，認為，由於Δζ電位成為-15 mV以上，故而減少了玻璃基板表面之Si-OH基量，將間隔紙壓抵於玻璃基板之情形時自間隔紙至玻璃基板之異物之轉印及附著較少。Δζ電位較佳為-13 mV以上。又，因製造較容易，故而，玻璃基板之Δζ電位較佳為0 mV以下。 玻璃基板之表面ζ電位可藉由研磨之後進行之洗淨方法而控制。並且，為了獲得如上所述之Δζ電位為-15 mV以上之玻璃基板，較佳為於研磨後之洗淨步驟中，使用鹼性之水系洗淨液進行洗淨。水系洗淨液係指包含水及洗淨劑之液狀組合物。鹼性之水系洗淨液係含有鹼之水系洗淨液。pH值較佳為10以上13以下，更佳為10以上12.5以下。 於鹼性之水系洗淨液中之洗淨劑為鹼性之情形時，洗淨劑可兼作鹼。於使用並非為鹼性之洗淨劑之情形時，鹼性之水系洗淨液除了該洗淨劑以外，還含有鹼。於此情形時，鹼可為洗淨劑，亦可並非為洗淨劑。作為鹼性之水系洗淨液中所含之鹼，可列舉：鹼金屬氫氧化物或鹼金屬碳酸鹽等鹼金屬化合物、胺類或氫氧化四級銨等，較佳為氫氧化鉀。 鹼性之水系洗淨液可含有螯合劑或界面活性劑作為洗淨劑。作為螯合劑，可列舉：乙二胺四乙酸系螯合劑、葡萄糖酸系螯合劑、氮基三乙酸系螯合劑、亞胺基丁二酸系螯合劑等。作為界面活性劑，較佳為非離子性界面活性劑。 就洗淨性之觀點而言，較佳為於洗淨液中包含螯合劑，但存在螯合劑促進來自玻璃表面之Al成分之萃取之可能性。Al之萃取使玻璃基板表面之Si-OH基增加。即，認為，若萃取出1個3價之Al，則實質上生成3個Si-OH基。由於玻璃基板表面之Si-OH基會成為來自間隔紙之異物附著之吸附點，故而就抑制來自間隔紙之異物之轉印(附著)之觀點而言，不含有螯合劑更好。 洗淨步驟可僅具有使用如上所述之鹼性之水系洗淨液進行洗淨之步驟(以下，稱為鹼洗淨步驟)，但較佳為於鹼洗淨步驟之前設置如下步驟之任一步驟：使用酸性之水系洗淨液進行洗淨之步驟(以下，稱為酸洗淨步驟)、使用pH值大於上述鹼性之水系洗淨液的強鹼性之水系洗淨液進行洗淨之步驟(以下，稱為強鹼洗淨步驟)、及使用氫氧化鉀水溶液進行洗淨之步驟(以下，稱為KOH洗淨步驟)。即，洗淨步驟具有使用至少包含鹼性之水系洗淨液之不同種類之水系洗淨液或氫氧化鉀水溶液之複數個洗淨步驟，且將最後之洗淨步驟設為鹼洗淨步驟係在控制Δζ電位方面較佳。 再者，於本說明書中，用於KOH洗淨步驟中之KOH水溶液不含有螯合劑或界面活性劑等洗淨劑。 酸洗淨步驟中所使用之酸性之水系洗淨液含有有機酸。為了確保玻璃基板表面之平坦性，酸性之水系洗淨液之pH值較佳為2.0～3.5之範圍。作為酸性之水系洗淨液中所含有之有機酸，例如，可列舉：如抗壞血酸、檸檬酸般之有機羧酸、或有機膦酸等，但並不限定於該等有機酸。此處，有機膦酸係指具有式：-P(＝O)(OH)2
所表示之膦酸基與碳原子鍵結而成之結構之有機化合物。每1分子有機膦酸之膦酸基之數量較佳為2以上，更佳為2～8，尤佳為2～4。 可與上述有機酸一併添加無機酸(例如：硫酸、磷酸、硝酸、氫氟酸、鹽酸等)，亦可單獨使用無機酸。又，於使用上述無機酸之情形時，為了抑制pH值之變動，亦可與無機酸一併添加該無機酸之鹽。進而，酸性之水系洗淨液可含有如上所述之螯合劑或界面活性劑。 強鹼洗淨步驟中所使用之強鹼性之水系洗淨液含有強鹼。作為強鹼性之水系洗淨液中所含有之強鹼，可列舉NaOH、KOH等。為了確保玻璃基板表面之平坦性，強鹼性之水系洗淨液之pH值在滿足pH值大於一併使用之鹼性之水系洗淨液之條件之基礎上，較佳為12.0～13.5之範圍。又，強鹼性之水系洗淨液與上述鹼性之水系洗淨液同樣地，可含有螯合劑或界面活性劑。 KOH洗淨步驟中所使用之KOH水溶液之pH值較佳為12.0～13.5之範圍。 利用上述水系洗淨液或KOH水溶液所進行之玻璃基板之洗淨較佳為以單片方式進行。只要為使水系洗淨液及KOH水溶液直接接觸玻璃基板之表面而將其洗淨之方法，則洗淨方法並無特別限定。可使用擦刮洗淨、噴淋洗淨(噴射洗淨)、浸漬(dip)洗淨等。水系洗淨液及KOH水溶液之溫度並無特別限定，可於室溫(15℃)～95℃下使用。於超過95℃之情形時，有水沸騰之虞，於洗淨操作方面欠佳。洗淨之後，可進行乾燥。作為乾燥方法，可列舉：吹送溫風之方法、或吹送壓縮之空氣之方法等。 於鹼洗淨步驟中，例如，如圖1所示，可採用如下方法：一面對藉由搬送輥1等機構而於洗淨裝置2內於水平方向被連續地搬送之玻璃基板3之上下兩表面吹送自洗淨噴嘴4噴射之洗淨液5，一面利用配置於兩表面側之旋轉刷6進行擦刮(擦洗)。 此處，作為洗淨用之旋轉刷6，使用複數個為PVA(Polyvinyl Alcohol，聚乙烯醇)等製之外徑70～100 mm之圓柱形狀者。並且，將該等刷子以旋轉軸相對於玻璃基板3之被洗淨面為垂直之方式，且以前端部與玻璃基板3之被洗淨面接觸，或成為未達2 mm之間隔之方式配置。旋轉刷6之旋轉速度較佳為設為100～500 rpm。 作為洗淨液5，使用如上所述之鹼性之水系洗淨液，洗淨液5之流量(噴射量)較佳為設為15～40升/分。又，擦刮時間較佳為設為1.5秒以上。 又，包含利用洗淨噴嘴4之洗淨液5之噴射部及旋轉刷6之洗淨部可僅設置1個，亦可設置複數個。於設置複數個洗淨部之情形時，就作業性之觀點而言，利用各洗淨部而噴射之洗淨液(鹼性之水系洗淨液)5較佳為相同組成且相同pH值者，但只要pH值為如上所述之範圍內，則亦可使用不同之pH值之洗淨液進行洗淨。 可於此種鹼洗淨步驟之前，設置酸洗淨步驟、強鹼洗淨步驟、及KOH洗淨步驟之任一步驟(以下，稱為前階段洗淨步驟)。於該情形時，於藉由圖1所示之洗淨裝置2進行鹼洗淨之前，藉由酸性之水系洗淨液、強鹼性之水系洗淨液及KOH水溶液之任一種將研磨後之玻璃基板洗淨(前階段洗淨步驟)。前階段洗淨步驟中之洗淨方法並無特別限定。例如，可採用於酸性或強鹼性之水系洗淨液或者KOH水溶液中浸漬特定之時間之方法。就作業性之觀點而言，較佳為，於圖1所示之洗淨裝置2之前，設置與該洗淨裝置同樣地構成之前階段洗淨裝置，而連續地進行洗淨。即，較佳為，於前階段洗淨裝置中，使酸性之水系洗淨液、強鹼性之水系洗淨液及KOH水溶液之任一種自洗淨噴嘴噴射而進行洗淨之後，連續地藉由用以進行鹼洗淨之洗淨裝置2進行洗淨。 藉由以此方式進行洗淨，可獲得具有-15 mV以上之Δζ電位之實施形態之玻璃基板。 ＜ΔAl/Si值＞ 如上所述，本發明之玻璃基板較佳為包含含有鋁之鋁矽玻璃之玻璃基板。並且，於本發明之玻璃基板為包含鋁矽玻璃之玻璃基板之情形時，ΔAl/Si值較佳為0.20以下。此處，ΔAl/Si值係藉由X射線光電子光譜法(以下，表示為XPS)而測定出之玻璃基板內部之Al/Si值減去同樣地藉由XPS而測定出之玻璃基板表面之Al/Si值而得的值(內部Al/Si值－表面Al/Si值)。ΔAl/Si值更佳為0.15以下，進而較佳為0.12以下。再者，Al/Si值中之Al及Si分別表示Al原子及Si原子之濃度(原子濃度)。 此處，測定玻璃基板內部之Al濃度及Si濃度之點之自表面之深度較佳為設為如下所示般決定之深度。 即，一面利用C60
離子濺鍍於玻璃基板形成凹穴(凹坑)，一面於各種深度之凹穴之底部測定Al濃度及Si濃度，而求出各原子濃度之深度方向之分佈。然後，求出各原子濃度之深度方向之分佈成為固定的深度，將以該深度測定出之Al濃度與Si濃度之比之值作為基板內部之Al/Si值，並求出該值減去玻璃基板表面之Al/Si值而得之值即ΔAl/Si值。 於具有-15 mV以上之Δζ電位之本發明之玻璃基板中，藉由使基板表面之Al/Si值相對於基板內部之Al/Si值之減少之程度即ΔAl/Si值為0.20以下，而獲得表面之Si-OH基量較少且來自間隔紙之異物不易轉印(附著)之玻璃基板。 於玻璃基板之研磨後之洗淨中，玻璃表面(表層)之Al成分之萃取量越多，則玻璃基板之表面之Si-OH基量變得越多。尤其是，由於Al之價數為3價，故而與作為一般之玻璃成分之1價之鹼金屬元素或2價之鹼土族金屬元素相比，更大程度上促進因萃取出1個原子而導致之Si-OH基之生成。因此，認為，表示玻璃基板表面之Al/Si值與並未萃取出如上所述之Al成分之基板內部之Al/Si值相比低至何種程度之ΔAl/Si值間接地表示玻璃基板表面之Si-OH基量。即，ΔAl/Si值越低，則意味著玻璃基板表面之Al成分之缺失越少，且表示玻璃基板表面之Si-OH基越少。因此，認為該Si-OH基量較少之玻璃基板中抑制了來自間隔紙之異物之轉印(附著)。 具體而言，於Δζ電位為-15 mV以上之玻璃基板中，於基板內部之Al/Si值減去表面之Al/Si值而得之值即ΔAl/Si值為0.20以下之情形時，由於玻璃基板表面之Si-OH基變得充分少，故而可獲得來自間隔紙之異物之轉印量較少之玻璃基板。 ＜來自間隔紙之異物轉印量＞ 自間隔紙轉印至玻璃基板之異物之量係藉由進行如下所示之恆溫恆濕試驗而進行測定並評價。恆溫恆濕試驗係模擬進行保管或搬送之狀況，於複數片玻璃基板之間介裝間隔紙而進行積層，而檢測自間隔紙轉印並附著於玻璃基板之異物(亦稱為微粒)之量。 於恆溫恆濕試驗中，將使複數片玻璃基板之間隔著間隔紙積層而成者於恆溫恆濕槽內施加特定之負載並保管特定之時間之後，藉由純水等對玻璃基板進行擦刮洗淨。然後，檢測出附著且殘留於洗淨後之玻璃基板之表面之異物。 關於附著於玻璃基板之表面之異物(微粒)之檢測，例如，使用FPD用異物檢測裝置HS730(東麗工程股份有限公司製造)。於該異物檢測裝置中，對玻璃基板之表面照射雷射(波長795 nm附近之帶狀雷射)，並利用感測器對來自表面之散射光進行檢測，藉此，檢測出附著於玻璃基板之表面之異物。然後，於運算部中，對由感測器輸出之圖像信號進行圖像處理，並收集被識別為異物之圖像，而運算出附著於玻璃基板之異物之量(每單位面積之個數及大小)。 其次，對作為本發明之第2實施形態之玻璃板捆包體進行說明。 [玻璃板捆包體] 作為本發明之第2實施形態之玻璃板捆包體係具備如下所述者之捆包體：玻璃板積層體，其係使複數片如上所述之第1實施形態之玻璃基板之間介隔間隔紙積層而成；及捆包用托板，其載置該玻璃板積層體。玻璃基板係以玻璃板捆包體之形態被保管或搬送。 圖2概略地表示玻璃板捆包體之一例。再者，圖2係自玻璃基板之側面方向對玻璃板捆包體進行觀察之圖(側視圖)。 圖2所示之玻璃板捆包體10係將玻璃板積層體13收容於捆包用托板14而成，該玻璃板積層體係使複數片玻璃基板11之間介隔間隔紙12積層而成。 間隔紙12係為了防止因玻璃基板11彼此之接觸而使玻璃基板11產生損傷而使用者，其具有大於玻璃基板11之尺寸，且以覆蓋玻璃基板11之整個面之方式配置於各玻璃基板11之間。間隔紙12之種類、物性等並無特別限定，可使用公知者。 捆包用托板14係公知之玻璃板捆包用者，其具有：基台15；傾斜台16，其立設於基台15之上表面之裏部；及載置台17，其載置於基台15之上表面之前部。玻璃板積層體13係以將玻璃基板11以載置於托板14之載置台17之上，且倚靠於傾斜台16之傾斜面之狀態積層之方式被收容。 再者，於玻璃板積層體13與傾斜台16之間亦可介置間隔紙12，又，玻璃板積層體13之最前面之玻璃基板11之表面亦可被間隔紙12覆蓋。 於以此方式構成之玻璃板捆包體10中，亦可視需要將蓋板抵接於最前面之玻璃基板11或間隔紙12，並且架設帶狀體而固定於傾斜台16，又，亦可以覆蓋玻璃板積層體13之整體之方式蓋上防護罩。 再者，如圖2所示，實施形態之玻璃板捆包體10並不限定於玻璃基板11以倚靠之狀態積層之構造者，捆包用托板亦可為將玻璃板積層體以平積狀態載置之構成。於為玻璃基板以成為水平之方式收容於捆包容器之構造之情形時，關於玻璃板積層體之下層之玻璃基板，較如圖2般之玻璃基板以倚靠之狀態載置之構成相比，間隔紙以更強之壓力被壓抵於玻璃基板。因此，藉由採用本發明之玻璃基板，來自間隔紙之異物之轉印量較少之效果更顯著地顯現，故而較佳。 [實施例] 以下，對本發明之實施例具體地進行說明，但本發明並不限定於該等實施例。於以下之例中，只要並未特別提及，則「%」意指質量%。 (實施例1～4、比較例) 準備實質上不含有鹼金屬成分之包含鋁矽玻璃之浮法玻璃板作為玻璃基板。然後，使用研磨墊，利用包含粒徑0.8～1.0 μm之氧化鈰粒子之漿料狀之研磨劑(昭和電工(股)製造，商品名：SHOROX A10)，對該玻璃基板之於浮拋窯中成形時與熔融錫接觸之表面進行研磨。研磨之後，使用包含碳酸鈣粒子之漿料進行漿料洗淨。 繼而，如下所示般將研磨之後經漿料洗淨之玻璃基板洗淨。 於實施例1中，使用圖1所示之洗淨裝置，進行鹼洗淨。即，一面對玻璃基板吹送利用水將鹼性之洗淨劑原液(Parker Corporation公司製造，商品名：PK-LCG213)稀釋而成之鹼性之水系洗淨液(原液濃度2%，pH值12.31)，一面利用PVA製之旋轉刷進行擦刮洗淨。再者，鹼性之水系洗淨液之溫度係設為25℃，對玻璃基板吹送鹼性之水系洗淨液之時間為12～15秒鐘。又，吹送鹼性之水系洗淨液期間，利用旋轉刷擦刮之時間為3～5秒鐘。其後，利用純水進行洗淨，並使其乾燥。 於實施例2中，首先，將玻璃基板浸漬於利用水將酸性之洗淨劑原液(Parker Corporation公司製造，商品名：PK-LCG492A)稀釋而成之酸性之水系洗淨液(原液濃度0.5%，pH值3.16)中20秒鐘，而進行酸洗淨。繼而，對於經酸洗淨之玻璃基板，使用圖1所示之洗淨裝置，與實施例1同樣地進行鹼洗淨。 於實施例3中，首先，將玻璃基板浸漬於利用水將強鹼性之洗淨劑原液(Parker Corporation公司製造，商品名：PK-LCG22)稀釋而成之強鹼性之水系洗淨液(原液濃度15%，pH值13.25)中20秒鐘，而進行強鹼洗淨。繼而，對於經強鹼洗淨之玻璃基板，使用圖1所示之洗淨裝置，與實施例1同樣地進行鹼洗淨。 於實施例4中，將玻璃基板浸漬於濃度調整為3%之KOH水溶液(pH值13.00)中20秒鐘而進行洗淨之後，使用圖1所示之洗淨裝置，與實施例1同樣地進行鹼洗淨。 於比較例中，使用圖1所示之洗淨裝置進行酸洗淨。即，一面對玻璃基板吹送利用水將酸性之洗淨劑原液(Parker Corporation公司製造，商品名：PK-LCG492A)稀釋而成之酸性之水系洗淨液(原液濃度0.5%，pH值3.16)，一面利用PVA製之旋轉刷進行擦刮洗淨。再者，酸性之水系洗淨液之溫度係設為25℃，對玻璃基板吹送酸性之水系洗淨液之時間為12～15秒鐘，吹送酸性之水系洗淨液期間，利用旋轉刷擦刮之時間為3～5秒鐘。 其次，利用如下所示之方法對實施例1～4及比較例中所獲得之玻璃基板之表面之ζ電位(表面ζ電位)、及作為外部標準試樣之經混酸處理之玻璃基板之表面之ζ電位(基準ζ電位)進行測定，而求出Δζ電位(表面ζ電位－基準ζ電位)。又，對於實施例1～4及比較例中所獲得之玻璃基板，利用如下所示之方法進行來自間隔紙之異物之轉印試驗，而對轉印至玻璃基板表面之異物(微粒)數量進行測定。進而，利用如下所示之方法，對玻璃基板之表面Al/Si值及內部Al/Si值進行測定，而求出ΔAl/Si值(均為原子濃度比)。 ＜表面ζ電位之測定＞ 表面ζ電位之測定係使用ELSZ-2000(大塚電子股份有限公司製造，測定範圍：-200～200 mV)，並使用平板電池而實施。再者，溶劑係設為濃度10 mM(0.01 mol/L)之NaCl溶液。又，考慮到自平板電池取出之容易度，玻璃基板之尺寸係設為34 mm×14 mm。 ＜基準ζ電位之測定＞ 製作基準ζ電位測定用之玻璃基板。首先，將與測定表面ζ電位之玻璃基板為同一批次之玻璃基板切斷為數cm見方(例如，5 cm×5 cm)，並對其質量進行測定。然後，將進行質量測定後之玻璃基板與混酸之水溶液(0.5體積%HF-0.7體積%HCl)一併放入開閉自如之帶卡頭之聚乙烯袋中，將其置於100 kHz之超音波洗淨機5分鐘，並於常溫下對玻璃基板進行蝕刻。繼而，對蝕刻後之玻璃基板之質量進行測定，而求出因蝕刻而減少之玻璃基板之質量。然後，根據玻璃基板之質量減少量，確認玻璃基板之單面之蝕刻量約為0.4 μm(兩面約為0.8 μm)。 其次，將以此方式被蝕刻之玻璃基板切斷為利用ELSZ-2000所進行之ζ電位測定之指定尺寸(34 mm×14 mm)，並將其作為外部標準試樣。然後，對於該外部標準試樣，與上述表面ζ電位之測定同樣地進行ζ電位之測定，並將其作為基準ζ電位。再者，對外部標準試樣之基準ζ電位之測定係與表面ζ電位之測定於同一天連續地進行。 ＜來自間隔紙之異物之轉印試驗及轉印異物數量之測定＞ 準備12片將實施例1～4及比較例中所獲得之玻璃基板切斷為特定之尺寸(370 mm×470 mm)而成者。然後，使該等玻璃基板之間隔著FPD用間隔紙(特種東海製紙股份有限公司製造，商品名：Kirari)，並於恆溫恆濕槽(溫度40℃，濕度60%)內，於20.6 g/cm2
之負荷下保持3小時。繼而，使用PVA製之旋轉刷對玻璃基板進行純水擦刮洗淨之後，對玻璃基板表面之異物(微粒)數量進行測定。異物數量之測定係使用FPD用異物檢測裝置(東麗工程股份有限公司製造，商品名：HS830e)而進行，並算出附著於玻璃基板之S、M、L各種尺寸之異物數量(每單位面積之個數)及合計數量。 再者，利用上述異物檢測裝置而檢測到之異物之尺寸分為S、M、L之3種類別，S尺寸對應於1.0 μm以上且未達3.0 μm，M尺寸對應於3.0 μm以上且未達5.0 μm，L尺寸對應於5.0 μm以上。又，雖可根據檢測感度而進行普通模式及高感度模式之2種類型之測定，但以更高感度之高感度模式進行了異物數量之測定。 ＜表面Al/Si值之測定＞ 藉由XPS對實施例1～4及比較例中所獲得之玻璃基板之表面之Al濃度及Si濃度進行測定，而求出Al/Si值。關於XPS測定，使用日本電子公司製造之光電子光譜裝置JPS-9010MC。測定條件如下所示。 X射線源：Mg-Kα，加速電壓12 kV-發射電流25 mA 中和槍(FLG，Flood Gun)：加速電壓4.0 V-發射電流8.0 mA 檢測角(試樣表面與檢測器所成之角度)：15° 檢測區域：6 mmΦ 試樣尺寸：10 mm×10 mm 解析軟體：SpecSurf 峰值本底去除法：Shirley法 ＜內部Al/Si值之測定＞ 對於用於表面Al/Si值之測定中之實施例1之玻璃基板，藉由使用C60
離子濺鍍之XPS而對Al濃度及Si濃度之深度方向分佈進行測定。關於XPS測定裝置，使用ULVAC-PHI公司製造之PHI5500，關於解析軟體，使用MultiPak。又，關於峰值本底去除，應用Shirley法。測定條件係將通能設為117.4 eV，將能級設為0.5 eV/級，將監測峰值設為Si(2p)及Al(2p)，將檢測角設為75°。並且，將濺鍍間隔設為5分鐘，每進行5分鐘濺鍍，便對所形成之凹坑底部之Al濃度及Si濃度進行測定。此種測定實施至Al濃度及Si濃度於深度方向成為固定為止。 根據以此方式而獲得之實施例1之玻璃基板中之Al濃度及Si濃度之深度方向分佈之圖，判斷出於濺鍍時間為40分鐘時，Al濃度及Si濃度成為固定。 再者，由於對Si晶圓上之熱氧化膜(SiO2
膜)中之C60
離子濺鍍之濺鍍速度進行測定之結果為1.4 nm/min，故而對於玻璃基板，亦推測為類似之濺鍍速度。因此，認為，於相當於濺鍍時間40分鐘之深度即56 nm以上，玻璃基板內部之Al濃度及Si濃度成為固定，可知內部Al/Si值為0.40。 又，由於實施例1～4及比較例為同一組成之玻璃基板，故而實施例2～4及比較例之內部Al/Si值亦視為與實施例1相同。 對於實施例1～4及比較例中所獲得之玻璃基板，將利用上述方法而測定出之表面ζ電位、基準ζ電位、Δζ電位、自間隔紙轉印之異物(微粒)數量、表面Al/Si值、內部Al/Si值、及ΔAl/Si值示於表1中。 [表1]
其次，基於表1之測定結果，分別檢查玻璃基板之Δζ電位與自間隔紙轉印之異物數量之合計的關係、及玻璃基板之ΔAl/Si值與自間隔紙轉印之異物數量之合計的關係。將玻璃基板之Δζ電位與來自間隔紙之轉印異物數量的關係示於圖3中，將ΔAl/Si值與來自間隔紙之轉印異物數量的關係示於圖4中。 由圖3可知，玻璃基板之Δζ電位與玻璃基板表面之轉印異物數量存在負之相關關係，玻璃基板之Δζ電位之值變得越大，則自間隔紙轉印至玻璃基板表面之異物數量變得越少。並且，可知，於玻璃基板之Δζ電位為-15 mV以上之情形時，可獲得玻璃基板表面之轉印異物數量充分少的玻璃基板。 又，由圖4可知，玻璃基板之ΔAl/Si值與玻璃基板表面之轉印異物數量存在正的相關關係，玻璃基板之ΔAl/Si值變得越小，則玻璃基板表面之轉印異物數量變得越少。並且，可知，於玻璃基板之ΔAl/Si值為0.2以下之情形時，可獲得轉印異物數量充分少的玻璃基板。 [產業上之可利用性] 根據本發明之玻璃基板，於使複數片玻璃基板之間介隔間隔紙而進行積層並收納之情形時，自間隔紙至玻璃基板表面之異物之轉印較少，且可抑制由異物污染所導致之斷線或短路、圖案化不良等缺陷。因此，本發明之玻璃基板可有效地應用於如LCD般之FPD用中所使用之玻璃基板。Hereinafter, embodiments of the present invention will be described. Furthermore, the present invention is not limited to the following embodiments, and other embodiments may also belong to the scope of the present invention as long as they conform to the gist of the present invention. [Glass substrate] The first embodiment of the present invention is a glass substrate containing silicate glass. And, it is characterized in that: the zeta potential of the surface of the glass substrate minus the zeta potential of the surface of the external standard glass substrate obtained by etching the glass substrate (Δζ potential) is -15 mV the above. The glass substrate of the first embodiment is, for example, a glass substrate for FPD such as LCD and PDP, but it is not limited thereto, and may be a glass substrate for construction, a glass substrate for vehicles, and the like. As long as the glass constituting the glass substrate is silicate glass, the composition is not particularly limited. For example, in the case of a glass substrate for FPD, it is preferable to include SiO 2 , Al 2 O 3 , B 2 O 3 and Aluminosilicate glass composed of oxides of alkaline earth metals. In addition, from the viewpoint of suppressing the adhesion and defects of the formed element, among the aluminosilicate glass, so-called alkali-free glass that does not substantially contain an alkali metal component is more preferable. In addition, the fact that the alkali metal component is not substantially contained means that it is allowed to contain an unavoidable component in the manufacturing process in addition to no alkali metal component at all. Specifically, the content of the alkali metal oxide in the glass composition is preferably 0.1% by mass or less. In order to obtain a glass substrate, first, the raw materials of each component constituting the glass are prepared so as to have a desired composition, and are heated and melted. Then, the glass is homogenized by aeration, stirring, addition of a clarifying agent, etc., and formed into a plate shape of a specific thickness by a known float method, pressing method, melting method, down-draw method, etc. Then, after slow cooling, processing such as grinding and polishing is performed as necessary to prepare a glass substrate of a specific size and shape. Then, after polishing the surface of the glass substrate, it is cleaned. Furthermore, as described below, in order to control the Δζ potential in the cleaning step, the glass substrate is preferably a float glass substrate that requires high polishing in terms of cleaning after polishing. In the polishing step, for example, a polishing pad is used to polish the surface of the glass substrate with an abrasive (slurry) containing abrasive grains. The type of abrasive particles contained in the abrasive is not particularly limited, and particles such as silica, alumina, ceria, titania, zirconia, and manganese oxide can be used. In terms of polishing efficiency, cerium oxide particles are preferred. The average particle diameter of the abrasive grains is preferably in the range of 0.8 to 1.0 μm, for example. In this way, after the surface of the glass substrate is polished, it is cleaned, and the zeta potential of the surface of the glass substrate can be controlled by selecting the cleaning method. The cleaning after grinding is as follows. <Δζ potential> The glass substrate of the first embodiment of the present invention has a Δζ potential of -15 mV or more. Here, the Δζ potential is the ζ potential of the surface of the glass substrate (hereinafter referred to as surface ζ potential) minus the ζ potential of the surface of the external standard glass substrate (hereinafter, also referred to as external standard sample) (hereinafter, referred to as Is the value derived from the reference zeta potential). That is, the Δζ potential is obtained by the following formula. Δζ potential = surface ζ potential-reference ζ potential The surface ζ potential and the reference ζ potential can be measured by the electrophoretic light scattering method (also known as the laser Doppler method). The measurement is performed, for example, using ELSZ-2000 (ζ potential measurement range: -200 to 200 mV) manufactured by Otsuka Electronics Co., Ltd. In the case of measuring an insulating plate-like sample such as a glass substrate by the above-mentioned device, a battery cell for a plate and a monitoring particle (surface-treated polymer latex) with a known moving speed are used. The flat battery cell has a structure that allows the plate-shaped sample to be closely attached to the upper surface of the box-shaped quartz battery to be integrated. Furthermore, for the measurement solvent, a NaCl solution with a concentration of 10 mM (0.01 mol/L) was used, and the pH value was 5.5 to 6.0. In addition, the zeta potential of the surface of the plate-shaped sample is obtained based on the change in the moving speed of the particles caused by the interaction between the monitored particles and the surface of the plate-shaped sample. As an external standard sample, the following sample was used: a glass substrate manufactured in the same batch as the glass substrate for measuring the surface zeta potential was etched using a mixed acid of hydrofluoric acid and hydrochloric acid, and the surface was etched to a specific depth , For example, a depth of 0.4 μm. Specifically, the following is used as the external standard sample, which is to put the glass plate and the mixed acid aqueous solution (0.5 vol% HF-0.7 vol% HCl) into a container together, and place it in a 100 kHz ultra Sonic washer for 5 minutes, and etched at room temperature. In addition, the measurement of the reference zeta potential of this kind of external standard sample was continuously performed on the same day as the measurement of the surface zeta potential of the glass substrate of the embodiment. The external standard sample is produced by, for example, dividing a glass substrate into two parts, and subjecting one part to an etching process using a mixed acid of hydrofluoric acid and hydrochloric acid as described above. The zeta potential of the external standard sample can be set as the reference zeta potential, and the zeta potential of the other glass substrate can be set as the surface zeta potential to obtain the Δζ potential. The inventors believe that there is a causal relationship between the zeta potential of the surface of the glass substrate and the amount of foreign matter transferred from the spacer paper when the glass spacer paper is pressed against the surface of the glass substrate. conduct experiment. It was found that there is a correlation between the Δζ potential and the amount of transferred foreign matter. There is a possibility that the Δζ potential indirectly indicates the amount of Si-OH groups on the surface of the glass substrate, and it can be predicted that the higher the Δζ potential of the glass substrate, the less the amount of Si-OH groups on the surface. In addition, the inventors believe that the Si-OH group on the surface of the glass substrate will become the adsorption point of the foreign matter from the spacer paper, so that the amount of foreign matter transferred can be suppressed by controlling the Δζ potential. Regarding the glass substrate of the first embodiment of the present invention, it is considered that since the Δζ potential becomes -15 mV or more, the amount of Si-OH groups on the surface of the glass substrate is reduced. When the spacer paper is pressed against the glass substrate, the spacer paper There is less transfer and adhesion of foreign matter to the glass substrate. The Δζ potential is preferably -13 mV or more. In addition, since it is easier to manufacture, the Δζ potential of the glass substrate is preferably 0 mV or less. The zeta potential of the surface of the glass substrate can be controlled by a cleaning method performed after polishing. In addition, in order to obtain the above-mentioned glass substrate with a Δζ potential of -15 mV or more, it is preferable to use an alkaline aqueous cleaning solution for cleaning in the cleaning step after polishing. Aqueous detergent refers to a liquid composition containing water and detergent. The alkaline aqueous cleaning solution is an alkaline aqueous cleaning solution. The pH is preferably 10 or more and 13 or less, more preferably 10 or more and 12.5 or less. When the detergent in the alkaline water-based detergent is alkaline, the detergent can double as an alkali. When using a detergent that is not alkaline, the alkaline water-based detergent contains an alkali in addition to the detergent. In this case, the alkali may or may not be a detergent. Examples of the alkali contained in the alkaline aqueous cleaning solution include alkali metal compounds such as alkali metal hydroxides and alkali metal carbonates, amines, quaternary ammonium hydroxide, and the like, and potassium hydroxide is preferred. Alkaline water-based cleaning solutions may contain chelating agents or surfactants as cleaning agents. Examples of the chelating agent include ethylenediaminetetraacetic acid-based chelating agents, gluconic acid-based chelating agents, nitrilotriacetic acid-based chelating agents, iminosuccinic acid-based chelating agents, and the like. As the surfactant, a nonionic surfactant is preferred. From the viewpoint of detergency, it is preferable to include a chelating agent in the cleaning liquid, but there is a possibility that the chelating agent promotes the extraction of Al components from the glass surface. The extraction of Al increases the Si-OH group on the surface of the glass substrate. That is, it is considered that if one trivalent Al is extracted, three Si-OH groups are substantially generated. Since the Si-OH group on the surface of the glass substrate becomes an adsorption point for the adhesion of foreign matter from the spacer paper, from the viewpoint of suppressing the transfer (adhesion) of the foreign matter from the spacer paper, it is better not to contain a chelating agent. The washing step may only have the step of washing with the alkaline water-based washing liquid as described above (hereinafter referred to as the alkaline washing step), but it is preferable to set any one of the following steps before the alkaline washing step Step: Use an acidic water-based cleaning solution for cleaning (hereinafter referred to as acid cleaning step), and use a strong alkaline water-based cleaning solution with a pH value greater than the above-mentioned alkaline water-based cleaning solution for cleaning A step (hereinafter referred to as a strong alkali cleaning step) and a step of cleaning using an aqueous potassium hydroxide solution (hereinafter referred to as a KOH cleaning step). That is, the cleaning step has a plurality of cleaning steps using different types of aqueous cleaning solutions or potassium hydroxide aqueous solutions containing at least alkaline aqueous cleaning solutions, and the last cleaning step is set as an alkaline cleaning step system. It is better in terms of controlling the Δζ potential. Furthermore, in this specification, the KOH aqueous solution used in the KOH cleaning step does not contain cleaning agents such as chelating agents or surfactants. The acidic aqueous cleaning solution used in the acid cleaning step contains organic acids. In order to ensure the flatness of the surface of the glass substrate, the pH value of the acidic water-based cleaning solution is preferably in the range of 2.0 to 3.5. Examples of the organic acid contained in the acidic water-based cleaning solution include organic carboxylic acids such as ascorbic acid and citric acid, or organic phosphonic acid, but are not limited to these organic acids. Here, organic phosphonic acid refers to an organic compound having a structure in which a phosphonic acid group represented by -P(=O)(OH) 2 is bonded to a carbon atom. The number of phosphonic acid groups per molecule of organic phosphonic acid is preferably 2 or more, more preferably 2-8, and particularly preferably 2-4. An inorganic acid (for example, sulfuric acid, phosphoric acid, nitric acid, hydrofluoric acid, hydrochloric acid, etc.) may be added together with the above organic acid, or an inorganic acid may be used alone. In addition, in the case of using the above-mentioned inorganic acid, in order to suppress the fluctuation of the pH value, the salt of the inorganic acid may be added together with the inorganic acid. Furthermore, the acidic water-based cleaning solution may contain the above-mentioned chelating agent or surfactant. The strong alkaline aqueous cleaning solution used in the strong alkaline cleaning step contains strong alkali. Examples of the strong alkali contained in the strongly alkaline aqueous cleaning solution include NaOH, KOH, and the like. In order to ensure the flatness of the surface of the glass substrate, the pH value of the strongly alkaline aqueous cleaning solution should satisfy the condition that the pH value is greater than the alkaline aqueous cleaning solution used together, preferably in the range of 12.0 to 13.5 . In addition, the strongly alkaline aqueous cleaning solution may contain a chelating agent or a surfactant similarly to the above-mentioned alkaline aqueous cleaning solution. The pH value of the KOH aqueous solution used in the KOH washing step is preferably in the range of 12.0 to 13.5. The cleaning of the glass substrate performed with the above-mentioned water-based cleaning solution or KOH aqueous solution is preferably performed in a single-piece method. The cleaning method is not particularly limited as long as it is a method of directly contacting the surface of the glass substrate with an aqueous cleaning solution and an aqueous KOH solution to clean it. You can use scrubbing cleaning, spray cleaning (jet cleaning), dip cleaning, etc. The temperature of the water-based cleaning solution and the KOH aqueous solution is not particularly limited, and it can be used at room temperature (15°C) to 95°C. When the temperature exceeds 95°C, there is a possibility that the water will boil, and the cleaning operation is not good. After washing, it can be dried. Examples of the drying method include a method of blowing warm air, a method of blowing compressed air, and the like. In the alkaline cleaning step, for example, as shown in FIG. 1, the following method can be used: one side faces the glass substrate 3 that is continuously transported in the horizontal direction in the cleaning device 2 by the transport roller 1 or the like. The cleaning liquid 5 sprayed from the cleaning nozzle 4 is blown on both surfaces, and one side is wiped (scrubbed) by the rotating brushes 6 arranged on the side of both surfaces. Here, as the rotating brush 6 for cleaning, a plurality of cylindrical shapes made of PVA (Polyvinyl Alcohol, polyvinyl alcohol) and the like with an outer diameter of 70-100 mm are used. In addition, the brushes are arranged so that the rotation axis is perpendicular to the surface to be cleaned of the glass substrate 3, and the tip end is in contact with the surface to be cleaned of the glass substrate 3, or the distance is less than 2 mm. . The rotation speed of the rotating brush 6 is preferably set to 100 to 500 rpm. As the cleaning solution 5, an alkaline aqueous cleaning solution as described above is used, and the flow rate (injection amount) of the cleaning solution 5 is preferably set to 15-40 liters/min. In addition, the wiping time is preferably 1.5 seconds or more. In addition, only one cleaning part including the spraying part of the cleaning liquid 5 using the cleaning nozzle 4 and the rotating brush 6 may be provided, or a plurality of cleaning parts may be provided. When a plurality of washing parts are provided, from the viewpoint of workability, the washing liquid (alkaline water-based washing liquid) 5 sprayed by each washing part is preferably one having the same composition and the same pH value , But as long as the pH value is within the above range, you can also use a different pH value cleaning solution for cleaning. Before this alkali cleaning step, any one of an acid cleaning step, a strong alkali cleaning step, and a KOH cleaning step can be provided (hereinafter, referred to as the previous stage cleaning step). In this case, before alkaline cleaning is performed by the cleaning device 2 shown in FIG. 1, the polished water is cleaned by any of an acidic aqueous cleaning solution, a strongly alkaline aqueous cleaning solution, and a KOH aqueous solution. The glass substrate is washed (pre-stage washing step). The cleaning method in the previous cleaning step is not particularly limited. For example, a method of immersing in an acidic or strongly alkaline aqueous cleaning solution or KOH aqueous solution for a specific time can be used. From the viewpoint of workability, it is preferable to provide a previous-stage washing device configured in the same manner as the washing device before the washing device 2 shown in FIG. 1 to perform washing continuously. That is, it is preferable to spray any one of an acidic aqueous cleaning solution, a strongly alkaline aqueous cleaning solution, and a KOH aqueous solution from the cleaning nozzle in the pre-stage cleaning device for cleaning, and then continuously The washing is performed by the washing device 2 for alkaline washing. By washing in this way, a glass substrate of an embodiment having a Δζ potential of -15 mV or more can be obtained. <ΔAl/Si value> As described above, the glass substrate of the present invention is preferably a glass substrate containing aluminum silicate glass. In addition, when the glass substrate of the present invention is a glass substrate containing aluminosilicate glass, the ΔAl/Si value is preferably 0.20 or less. Here, the ΔAl/Si value is the Al/Si value inside the glass substrate measured by X-ray photoelectron spectroscopy (hereinafter referred to as XPS) minus the Al on the surface of the glass substrate measured by XPS in the same way /Si value (internal Al/Si value-surface Al/Si value). The ΔAl/Si value is more preferably 0.15 or less, and still more preferably 0.12 or less. Furthermore, Al and Si in the Al/Si value represent the concentrations (atomic concentrations) of Al atoms and Si atoms, respectively. Here, the depth from the surface at the point where the Al concentration and the Si concentration inside the glass substrate are measured is preferably a depth determined as follows. That is, while using C 60 ion sputtering to form cavities (pits) on the glass substrate, while measuring the Al concentration and Si concentration at the bottom of the cavities of various depths, the distribution of the concentration of each atom in the depth direction is obtained. Then, the distribution in the depth direction of each atom concentration is determined to be a fixed depth, the ratio of the Al concentration and the Si concentration measured at this depth is used as the Al/Si value inside the substrate, and the value is calculated minus the glass The value derived from the Al/Si value of the substrate surface is the ΔAl/Si value. In the glass substrate of the present invention with a Δζ potential of -15 mV or more, by reducing the Al/Si value on the surface of the substrate relative to the Al/Si value inside the substrate, the ΔAl/Si value is 0.20 or less, and Obtain a glass substrate with a small amount of Si-OH groups on the surface and the foreign matter from the spacer paper is not easy to transfer (adhere). In the cleaning after polishing of the glass substrate, the more the extraction amount of the Al component on the surface of the glass (surface layer), the more the amount of Si-OH groups on the surface of the glass substrate. In particular, since the valence of Al is trivalent, it promotes the extraction of one atom to a greater extent than the monovalent alkali metal element or the bivalent alkaline earth metal element which is a common glass component The formation of Si-OH group. Therefore, it is considered that the value of ΔAl/Si indicating how low the Al/Si value on the surface of the glass substrate is compared to the Al/Si value inside the substrate where the Al component as described above is not extracted is indirectly indicative of the surface of the glass substrate The amount of Si-OH groups. That is, the lower the ΔAl/Si value, the less the absence of Al components on the surface of the glass substrate, and the fewer the Si-OH groups on the surface of the glass substrate. Therefore, it is considered that the transfer (adhesion) of foreign matter from the spacer paper is suppressed in the glass substrate with a small amount of Si-OH groups. Specifically, in a glass substrate with a Δζ potential of -15 mV or more, the value obtained by subtracting the Al/Si value on the surface from the Al/Si value inside the substrate, that is, when the ΔAl/Si value is less than 0.20, because The Si-OH groups on the surface of the glass substrate are sufficiently reduced, so a glass substrate with a small amount of transfer of foreign matter from the spacer paper can be obtained. <The amount of foreign matter transferred from the spacer paper> The amount of foreign matter transferred from the spacer paper to the glass substrate was measured and evaluated by performing the constant temperature and humidity test shown below. The constant temperature and humidity test simulates the condition of storage or transportation. A spacer paper is interposed between a plurality of glass substrates to be laminated to detect the amount of foreign matter (also called particles) transferred from the spacer paper and attached to the glass substrate. . In the constant temperature and humidity test, a plurality of glass substrates are laminated with spacer paper in a constant temperature and humidity tank after a specific load is applied and stored for a specific period of time, and then the glass substrate is wiped with pure water, etc. Wash. Then, the foreign matter adhering and remaining on the surface of the cleaned glass substrate is detected. Regarding the detection of foreign matter (particles) attached to the surface of the glass substrate, for example, the foreign matter detection device HS730 for FPD (manufactured by Toray Engineering Co., Ltd.) is used. In this foreign matter detection device, the surface of the glass substrate is irradiated with a laser (a belt-shaped laser with a wavelength around 795 nm), and the scattered light from the surface is detected by a sensor, thereby detecting adhesion to the glass substrate Foreign matter on the surface. Then, in the computing unit, image processing is performed on the image signal output by the sensor, and images recognized as foreign objects are collected, and the amount of foreign objects attached to the glass substrate (number per unit area) is calculated And size). Next, the glass plate package as the second embodiment of the present invention will be described. [Glass sheet packing body] The glass sheet packing system as the second embodiment of the present invention is provided with a packing body as follows: a glass sheet laminate, which is a plurality of sheets of the first embodiment described above The glass substrates are laminated with spacer paper interposed therebetween; and a pallet for packaging on which the glass plate laminate is placed. The glass substrate is stored or transported in the form of a glass plate package. Fig. 2 schematically shows an example of a glass plate package. Furthermore, FIG. 2 is the figure (side view) which looked at the glass plate package body from the side surface direction of a glass substrate. The glass plate package 10 shown in FIG. 2 is formed by accommodating a glass plate laminate 13 in a pallet 14 for packaging. This glass plate laminate system is formed by laminating a plurality of glass substrates 11 with spacer paper 12 between them. . The spacer paper 12 is used to prevent the glass substrate 11 from being damaged due to the contact between the glass substrates 11 and the user. It has a size larger than the glass substrate 11 and is arranged on each glass substrate 11 so as to cover the entire surface of the glass substrate 11 between. The type and physical properties of the spacer paper 12 are not particularly limited, and known ones can be used. The bundling pallet 14 is a well-known glass plate bundling user, and it has: a base 15; an inclined table 16, which is erected on the inner part of the upper surface of the base 15; and a mounting table 17, which is placed on The front part of the upper surface of the abutment 15. The glass plate laminate 13 is housed in a state where the glass substrate 11 is placed on the mounting table 17 of the pallet 14 and leaned against the inclined surface of the inclined table 16. Furthermore, a spacer paper 12 may be interposed between the glass plate laminate 13 and the inclined table 16, and the surface of the front glass substrate 11 of the glass plate laminate 13 may also be covered by the spacer paper 12. In the glass plate package body 10 constructed in this way, the cover plate may be abutted against the frontmost glass substrate 11 or the spacer paper 12 as needed, and a belt-shaped body may be erected and fixed to the inclined table 16. Cover the entire glass plate laminate 13 with a protective cover. Furthermore, as shown in FIG. 2, the glass plate package 10 of the embodiment is not limited to a structure in which the glass substrate 11 is laminated in a state where the glass substrate 11 is laminated. The composition of the state placement. In the case of a structure in which the glass substrate is housed in the packaging container in a horizontal manner, the glass substrate in the lower layer of the glass plate laminate is compared with the structure in which the glass substrate is placed in a leaning state as shown in Fig. 2, The spacer paper is pressed against the glass substrate with stronger pressure. Therefore, by using the glass substrate of the present invention, the effect of less transfer of foreign matter from the spacer paper is more remarkably manifested, which is preferable. [Examples] Hereinafter, examples of the present invention will be specifically described, but the present invention is not limited to these examples. In the following examples, as long as there is no special mention, "%" means mass%. (Examples 1 to 4, Comparative Example) As a glass substrate, a float glass plate containing aluminosilicate glass, which does not substantially contain an alkali metal component, was prepared. Then, using a polishing pad, using a slurry-like abrasive (manufactured by Showa Denko Co., Ltd., trade name: SHOROX A10) containing cerium oxide particles with a particle size of 0.8-1.0 μm, the glass substrate was placed in a float polishing kiln The surface in contact with molten tin during forming is polished. After grinding, the slurry is washed with a slurry containing calcium carbonate particles. Then, the glass substrate washed with the slurry after polishing is washed as shown below. In Example 1, the cleaning device shown in FIG. 1 was used to perform alkaline cleaning. That is, while blowing on the glass substrate, an alkaline aqueous cleaning solution (the concentration of the original solution is 2%, the pH value is 2%, and the alkaline cleaning agent stock solution (manufactured by Parker Corporation, trade name: PK-LCG213) is diluted with water. 12.31), one side is scrubbed and cleaned with a rotating brush made of PVA. Furthermore, the temperature of the alkaline water-based cleaning solution is set to 25°C, and the time for blowing the alkaline water-based cleaning solution to the glass substrate is 12 to 15 seconds. In addition, during the blowing of the alkaline water-based cleaning solution, the time for scrubbing with the rotating brush is 3 to 5 seconds. After that, it was washed with pure water and dried. In Example 2, first, the glass substrate was immersed in an acidic aqueous cleaning solution (the concentration of the original solution was 0.5%), which was diluted with an acidic cleaning agent stock solution (manufactured by Parker Corporation, trade name: PK-LCG492A) with water. , PH 3.16) for 20 seconds, and acid wash. Next, the glass substrate which was acid-washed was cleaned with alkali in the same manner as in Example 1 using the cleaning device shown in FIG. 1. In Example 3, first, the glass substrate was immersed in a strong alkaline aqueous detergent solution (manufactured by Parker Corporation, trade name: PK-LCG22) diluted with a strong alkaline detergent stock solution (manufactured by Parker Corporation, trade name: PK-LCG22) with water ( The concentration of the stock solution is 15% and the pH value is 13.25) for 20 seconds, and then a strong alkali cleaning is carried out. Next, the glass substrate washed with a strong alkali was cleaned in the same manner as in Example 1 using the cleaning device shown in FIG. 1. In Example 4, the glass substrate was washed by immersing the glass substrate in a KOH aqueous solution (pH 13.00) adjusted to a concentration of 3% for 20 seconds. Then, the washing device shown in FIG. 1 was used in the same manner as in Example 1. Carry out alkaline washing. In the comparative example, the cleaning device shown in FIG. 1 was used for pickling cleaning. That is, blow an acidic water-based cleaning solution (the concentration of the stock solution is 0.5%, the pH value is 3.16), which is diluted with the acidic detergent stock solution (manufactured by Parker Corporation, trade name: PK-LCG492A) with water, to the glass substrate. , One side is scrubbed and cleaned with a rotating brush made of PVA. In addition, the temperature of the acidic water-based cleaning solution is set to 25°C, and the time for blowing the acidic water-based cleaning solution to the glass substrate is 12-15 seconds. During the blowing of the acidic water-based cleaning solution, use a rotating brush to wipe. The time is 3 to 5 seconds. Secondly, the zeta potential (surface zeta potential) of the surface of the glass substrate obtained in Examples 1 to 4 and the comparative example and the surface of the glass substrate treated with mixed acid as an external standard sample were measured by the method shown below. The zeta potential (reference zeta potential) is measured, and the Δζ potential (surface zeta potential-reference zeta potential) is determined. In addition, for the glass substrates obtained in Examples 1 to 4 and Comparative Examples, the transfer test of foreign matter from the spacer paper was performed by the method shown below, and the number of foreign matter (particles) transferred to the surface of the glass substrate was measured Determination. Furthermore, the surface Al/Si value and the internal Al/Si value of the glass substrate were measured by the method shown below, and the ΔAl/Si value (both atomic concentration ratio) was determined. <Measurement of surface zeta potential> The measurement of surface zeta potential was carried out using ELSZ-2000 (manufactured by Otsuka Electronics Co., Ltd., measurement range: -200 to 200 mV) using a flat battery. Furthermore, the solvent is a NaCl solution with a concentration of 10 mM (0.01 mol/L). In addition, considering the ease of removal from the flat battery, the size of the glass substrate is set to 34 mm×14 mm. <Measurement of reference zeta potential> A glass substrate for reference zeta potential measurement was made. First, the glass substrate of the same batch as the glass substrate for measuring the surface zeta potential is cut into several cm squares (for example, 5 cm×5 cm), and the mass is measured. Then, put the glass substrate and the mixed acid aqueous solution (0.5% by volume HF-0.7% by volume HCl) into a polyethylene bag with a card head that can be opened and closed together, and place it in a 100 kHz ultrasonic wave. The washing machine was used for 5 minutes, and the glass substrate was etched at room temperature. Then, the quality of the glass substrate after etching is measured, and the quality of the glass substrate reduced by etching is obtained. Then, according to the mass reduction of the glass substrate, it was confirmed that the etching amount of one side of the glass substrate was approximately 0.4 μm (approximately 0.8 μm on both sides). Next, cut the glass substrate etched in this way into the specified size (34 mm×14 mm) for zeta potential measurement by ELSZ-2000, and use it as an external standard sample. Then, for this external standard sample, the zeta potential was measured in the same manner as the measurement of the surface zeta potential described above, and this was used as the reference zeta potential. Furthermore, the measurement of the reference zeta potential of the external standard sample and the measurement of the surface zeta potential were performed continuously on the same day. <Transfer test of foreign matter from spacer paper and measurement of the amount of transferred foreign matter> Prepare 12 pieces of glass substrates obtained in Examples 1 to 4 and Comparative Examples and cut them into specific dimensions (370 mm×470 mm). Winner. Then, the FPD spacer paper (manufactured by Tokai Tokai Paper Co., Ltd., trade name: Kirari) was placed between the glass substrates and placed in a constant temperature and humidity bath (temperature 40°C, humidity 60%) at 20.6 g/ Hold for 3 hours under a load of cm 2. Then, the glass substrate was wiped and cleaned with pure water using a rotating brush made of PVA, and then the amount of foreign matter (particles) on the surface of the glass substrate was measured. The number of foreign objects is measured using a foreign object detection device for FPD (manufactured by Toray Engineering Co., Ltd., trade name: HS830e), and the number of foreign objects of various sizes of S, M, and L attached to the glass substrate is calculated (per unit area). Number) and the total number. In addition, the size of the foreign body detected by the above-mentioned foreign body detection device is divided into three categories: S, M, and L. The S size corresponds to 1.0 μm or more and less than 3.0 μm, and the M size corresponds to 3.0 μm or more and less than 5.0 μm, the L size corresponds to 5.0 μm or more. In addition, although two types of measurements, the normal mode and the high-sensitivity mode, can be performed based on the detection sensitivity, the number of foreign objects is measured in the high-sensitivity mode with higher sensitivity. <Measurement of Surface Al/Si Value> The Al concentration and Si concentration on the surface of the glass substrates obtained in Examples 1 to 4 and the comparative example were measured by XPS to obtain the Al/Si value. For the XPS measurement, a photoelectron spectrometer JPS-9010MC manufactured by JEOL Ltd. was used. The measurement conditions are as follows. X-ray source: Mg-Kα, acceleration voltage 12 kV-emission current 25 mA Neutralizing gun (FLG, Flood Gun): acceleration voltage 4.0 V-emission current 8.0 mA Detection angle (the angle between the sample surface and the detector) ：15° Detection area: 6 mmΦ Specimen size: 10 mm×10 mm Analysis software: SpecSurf Peak background removal method: Shirley method <Determination of internal Al/Si value> For the measurement of surface Al/Si value For the glass substrate of Example 1, the depth direction distribution of the Al concentration and the Si concentration was measured by XPS using C 60 ion sputtering. For the XPS measuring device, PHI5500 manufactured by ULVAC-PHI is used, and for the analysis software, MultiPak is used. In addition, the Shirley method is applied to remove the peak background. The measurement conditions are as follows: the pass energy is set to 117.4 eV, the energy level is set to 0.5 eV/level, the monitoring peaks are set to Si(2p) and Al(2p), and the detection angle is set to 75°. In addition, the sputtering interval was set to 5 minutes, and every 5 minutes of sputtering, the Al concentration and Si concentration at the bottom of the formed pits were measured. This measurement is performed until the Al concentration and the Si concentration become constant in the depth direction. According to the graph of the depth direction distribution of the Al concentration and the Si concentration in the glass substrate of Example 1 obtained in this way, it is judged that the Al concentration and the Si concentration are fixed when the sputtering time is 40 minutes. Furthermore, since the sputtering rate of C 60 ion sputtering in the thermal oxide film (SiO 2 film) on the Si wafer was measured, the result was 1.4 nm/min, so for the glass substrate, it is also assumed to be similar sputtering. Plating speed. Therefore, it is considered that the Al concentration and the Si concentration inside the glass substrate become constant at a depth equivalent to 40 minutes of sputtering time, that is, 56 nm or more, and the internal Al/Si value is 0.40. In addition, since Examples 1 to 4 and Comparative Example are glass substrates of the same composition, the internal Al/Si values of Examples 2 to 4 and Comparative Example are also regarded as the same as Example 1. For the glass substrates obtained in Examples 1 to 4 and Comparative Examples, the surface zeta potential, the reference zeta potential, the Δζ potential, the number of foreign matter (particles) transferred from the spacer paper, and the surface Al/ The Si value, internal Al/Si value, and ΔAl/Si value are shown in Table 1. [Table 1] Next, based on the measurement results in Table 1, check the total relationship between the Δζ potential of the glass substrate and the number of foreign matter transferred from the spacer paper, and the total of the ΔAl/Si value of the glass substrate and the number of foreign matter transferred from the spacer paper. relationship. The relationship between the Δζ potential of the glass substrate and the amount of foreign matter transferred from the spacer paper is shown in FIG. 3, and the relationship between the value of ΔAl/Si and the amount of foreign matter transferred from the spacer paper is shown in FIG. It can be seen from Figure 3 that there is a negative correlation between the Δζ potential of the glass substrate and the number of foreign matter transferred on the surface of the glass substrate. The greater the value of the Δζ potential of the glass substrate becomes, the number of foreign matter transferred from the spacer paper to the surface of the glass substrate Becomes less. In addition, it can be seen that when the Δζ potential of the glass substrate is -15 mV or more, a glass substrate with a sufficiently small number of transferred foreign substances on the surface of the glass substrate can be obtained. In addition, it can be seen from Figure 4 that there is a positive correlation between the ΔAl/Si value of the glass substrate and the number of foreign matter transferred on the surface of the glass substrate. The smaller the ΔAl/Si value of the glass substrate becomes, the number of foreign matter transferred on the surface of the glass substrate. Becomes less. In addition, it can be seen that when the ΔAl/Si value of the glass substrate is 0.2 or less, a glass substrate with a sufficiently small number of transferred foreign substances can be obtained. [Industrial Applicability] According to the glass substrate of the present invention, when a plurality of glass substrates are laminated and stored with spacer paper between them, the transfer of foreign matter from the spacer paper to the surface of the glass substrate is less , And can suppress defects such as disconnection or short circuit caused by foreign matter contamination, poor patterning, etc. Therefore, the glass substrate of the present invention can be effectively applied to glass substrates used in FPD applications such as LCDs.