TWI718373B - Force sensor and manufacture method thereof - Google Patents
Force sensor and manufacture method thereof Download PDFInfo
- Publication number
- TWI718373B TWI718373B TW107115601A TW107115601A TWI718373B TW I718373 B TWI718373 B TW I718373B TW 107115601 A TW107115601 A TW 107115601A TW 107115601 A TW107115601 A TW 107115601A TW I718373 B TWI718373 B TW I718373B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- bump
- force sensor
- package body
- integrated circuit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 231
- 239000003990 capacitor Substances 0.000 claims description 30
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000003825 pressing Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
本發明是有關一種力量感測器以及其製造方法,特別是一種以微機電系統裝置所實現之力量感測器以及其製造方法。 The present invention relates to a force sensor and a manufacturing method thereof, in particular to a force sensor realized by a micro-electromechanical system device and a manufacturing method thereof.
自1970年代微機電系統(Microelectromechanical System,MEMS)裝置概念成形起,微機電系統裝置已從實驗室的探索對象進步至成為高階系統整合的對象,並已在大眾消費性裝置中有廣泛的應用,展現了驚人且穩定的成長。微機電系統裝置包含一可動之微機電系統元件,藉由感測或控制可動之微機電系統元件之運動物理量可實現微機電系統裝置的各項功能。力量感測器即為一例,其可偵測是否產生按壓動作及/或按壓的力道。 Since the formation of the concept of Microelectromechanical System (MEMS) devices in the 1970s, MEMS devices have progressed from being the object of laboratory exploration to being the object of high-level system integration, and have been widely used in mass consumer devices. Shows amazing and stable growth. The MEMS device includes a movable MEMS element, and various functions of the MEMS device can be realized by sensing or controlling the motion physical quantity of the movable MEMS element. An example is a force sensor, which can detect whether a pressing action and/or pressing force is generated.
習知之力量感測器主要有壓電電阻器式(piezoresistor)壓力感測器以及電容式壓力感測器。請參照圖1,習知之壓電電阻器式壓力感測器是在可動薄膜11上設置多個壓電電阻器12。當按壓的應力導致可動薄膜11產生形變時,壓電電阻器12即產生相對應之偵測訊號。請參照圖2,習知之電容式壓力感測器包含一可動薄膜21以及一固定電極22,其中可動薄膜21與固定電極22相對應,以構成一感測電容。感測電容所產生之偵測訊號則透過引線23輸出至一特定應用積體電路晶片24進行處理。可以理解的是,為了保護裝置,上述元件需以封裝體25
加以封裝。而按壓所產生之應力則透過封裝體25造成可動薄膜21產生形變,並使感測電容輸出相對應之偵測訊號。
The conventional force sensors mainly include piezoresistor pressure sensors and capacitive pressure sensors. Please refer to FIG. 1, the conventional piezoresistor type pressure sensor is provided with a plurality of
依據上述結構,反覆按壓所產生之應力可能導致封裝體25及/或打線的可靠度降低,甚至損毀可動薄膜。此外,按壓所產生之應力大小僅能透過封裝體25之厚度來控制,因此不同規格之力量感測器不容易以標準的組裝製程進行封裝。有鑑於此,如何提升力量感測器之可靠度以及標準化封裝製程便是目前極需努力的目標。
According to the above structure, the stress generated by repeated pressing may reduce the reliability of the
本發明提供一種力量感測器以及其製造方法,其是設置一第三基板於一封裝體以及一微機電系統元件之間,以作為微機電系統元件之蓋體,蓋體且與微機電系統元件連接,使微機電系統元件隨著蓋體形變而產生相對應之運動量。依據此結構,力量感測器內之引線可遠離按壓所產生之應力源,且微機電系統元件不易因反覆按壓而損壞,因此裝置之可靠度可大幅提升。此外,不同規格之力量感測器可藉由調整第三基板之厚度加以控制,因此不同規格之力量感測器能夠以相同之組裝製程進行封裝。 The present invention provides a force sensor and a manufacturing method thereof. A third substrate is provided between a package body and a MEMS element to serve as the cover of the MEMS element, and the cover is in contact with the MEMS element. The components are connected, so that the MEMS components produce corresponding motions along with the deformation of the cover. According to this structure, the leads in the force sensor can be far away from the stress source generated by pressing, and the MEMS components are not easily damaged by repeated pressing, so the reliability of the device can be greatly improved. In addition, the force sensors of different specifications can be controlled by adjusting the thickness of the third substrate, so the force sensors of different specifications can be packaged by the same assembly process.
本發明一實施例之力量感測器包含一第一基板、一第二基板、一第三基板以及一封裝體。第一基板包含一固定電極、至少一第一導電接點以及至少一第二導電接點。第二基板包含一第一表面、一相對之第二表面以及一微機電系統元件,其與固定電極相對應,其中第二基板以第一表面朝向第一基板設置於第一基板,並與第一基板之第一導電接點電性連接。第三基板設置於第二基板之第二表面,其中第三基板包含一凸柱,其與微機電系統元件連接。封裝體則覆蓋第三基板。 A force sensor according to an embodiment of the present invention includes a first substrate, a second substrate, a third substrate, and a package. The first substrate includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact. The second substrate includes a first surface, an opposite second surface, and a microelectromechanical system element, which corresponds to the fixed electrode. The second substrate is disposed on the first substrate with the first surface facing the first substrate, and is connected to the The first conductive contact of a substrate is electrically connected. The third substrate is disposed on the second surface of the second substrate, wherein the third substrate includes a protrusion, which is connected with the microelectromechanical system component. The package body covers the third substrate.
本發明另一實施例之力量感測器之製造方法包含提供一第三基板,並定義出至少一第一連接部以及一凸柱;提供一第二基板,其包含一第一表面以及一相對之第二表面;以第二表面朝向第三基板,接合第二基板於第三基板之第一連接部以及凸柱;於第二基板之第一表面定義出至少一第二連接部;於第二基板定義出一微機電系統元件,其中微機電系統元件與凸柱連接;提供一第一基板,其包含一固定電極、至少一第一導電接點以及至少一第二導電接點;接合第一基板以及第二基板,其中至少一第一導電接點與至少一第二連接部電性連接,且微機電系統元件與固定電極相對應;以及以一封裝體覆蓋第三基板。 A method of manufacturing a force sensor according to another embodiment of the present invention includes providing a third substrate and defining at least one first connecting portion and a protrusion; providing a second substrate including a first surface and an opposite The second surface; with the second surface facing the third substrate, join the second substrate to the first connection portion and the protruding post of the third substrate; define at least one second connection portion on the first surface of the second substrate; The two substrates define a MEMS element, wherein the MEMS element is connected to the bump; a first substrate is provided, which includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact; A substrate and a second substrate, in which at least one first conductive contact is electrically connected to at least one second connection portion, and the MEMS element corresponds to the fixed electrode; and a package body covers the third substrate.
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。 The following detailed descriptions are provided with specific embodiments and accompanying drawings to make it easier to understand the purpose, technical content, characteristics and effects of the present invention.
11:可動薄膜 11: Movable film
12:壓電電阻器 12: Piezo resistor
21:可動薄膜 21: Movable film
22:固定電極 22: fixed electrode
23:引線 23: Lead
24:特定應用積體電路晶片 24: Integrated circuit chips for specific applications
25:封裝體 25: Package body
31:第一基板 31: The first substrate
311:固定電極 311: fixed electrode
312:第一導電接點 312: The first conductive contact
313:第二導電接點 313: second conductive contact
314:參考電極 314: Reference electrode
32:第二基板 32: second substrate
32a:第一表面 32a: first surface
32b:第二表面 32b: second surface
321:第二連接部 321: second connecting part
322:導電材料 322: conductive material
323:微機電系統元件 323: MEMS components
324:參考元件 324: Reference Components
33:第三基板 33: third substrate
331:第一連接部 331: first connection part
332:凸柱 332: Convex Column
333:凹槽 333: Groove
34:封裝基板 34: Package substrate
341:外部導電接點 341: External conductive contact
35a、35b:引線 35a, 35b: lead
36:封裝體 36: Package body
361:突出部 361: protruding part
37:特定應用積體電路晶片 37: Application-specific integrated circuit chip
38:突出件 38: Protruding pieces
381:凸塊 381: bump
382:平板 382: Tablet
383:連接腳 383: connecting pin
39:膠體 39: colloid
圖1為一示意圖,顯示習知之壓電電阻器式壓力感測器。 Figure 1 is a schematic diagram showing a conventional piezoresistor pressure sensor.
圖2為一示意圖,顯示習知之電容式壓力感測器。 Figure 2 is a schematic diagram showing a conventional capacitive pressure sensor.
圖3為一示意圖,顯示本發明第一實施例之力量感測器。 Fig. 3 is a schematic diagram showing the force sensor according to the first embodiment of the present invention.
圖4為一示意圖,顯示本發明第二實施例之力量感測器。 Fig. 4 is a schematic diagram showing the force sensor according to the second embodiment of the present invention.
圖5為一俯視示意圖,顯示本發明第三實施例之力量感測器之第二基板。 FIG. 5 is a schematic top view showing the second substrate of the force sensor according to the third embodiment of the present invention.
圖6為一示意圖,顯示本發明第四實施例之力量感測器。 Fig. 6 is a schematic diagram showing the force sensor of the fourth embodiment of the present invention.
圖7為一示意圖,顯示本發明第五實施例之力量感測器。 Fig. 7 is a schematic diagram showing the force sensor of the fifth embodiment of the present invention.
圖8為一示意圖,顯示本發明第六實施例之力量感測器。 Fig. 8 is a schematic diagram showing the force sensor of the sixth embodiment of the present invention.
圖9為一示意圖,顯示本發明第七實施例之力量感測器。 Fig. 9 is a schematic diagram showing the force sensor of the seventh embodiment of the present invention.
圖10為一俯視示意圖,顯示本發明第七實施例之力量感測器之突出件。 Fig. 10 is a schematic top view showing the protrusion of the force sensor of the seventh embodiment of the present invention.
圖11為一示意圖,顯示本發明第八實施例之力量感測器。 Fig. 11 is a schematic diagram showing the force sensor of the eighth embodiment of the present invention.
圖12為一示意圖,顯示本發明第九實施例之力量感測器。 Fig. 12 is a schematic diagram showing the force sensor of the ninth embodiment of the present invention.
圖13為一示意圖,顯示本發明第十實施例之力量感測器。 FIG. 13 is a schematic diagram showing the force sensor of the tenth embodiment of the present invention.
圖14a至圖14j為示意圖,顯示本發明第一實施例之力量感測器之製造步驟。 14a to 14j are schematic diagrams showing the manufacturing steps of the force sensor according to the first embodiment of the present invention.
以下將詳述本發明之各實施例,並配合圖式作為例示。除了這些詳細說明之外,本發明亦可廣泛地施行於其它的實施例中,任何所述實施例的輕易替代、修改、等效變化都包含在本發明之範圍內,並以申請專利範圍為準。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免對本發明形成不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是,圖式僅為示意之用,並非代表元件實際之尺寸或數量,有些細節可能未完全繪出,以求圖式之簡潔。 Hereinafter, various embodiments of the present invention will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and easy substitutions, modifications, and equivalent changes of any of the embodiments are included in the scope of the present invention, and the scope of the patent application is quasi. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific details are provided; however, the present invention may still be implemented under the premise of omitting some or all of the specific details. In addition, well-known steps or elements are not described in details to avoid unnecessary limitation of the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. It is especially important to note that the drawings are for illustrative purposes only, and do not represent the actual size or quantity of the components. Some details may not be completely drawn in order to keep the drawings concise.
請參照圖3,本發明之一實施例之力量感測器包含一第一基板31、一第二基板32、一第三基板33以及一封裝體36。第一基板31包含一固定電極311、至少一第一導電接點312以及至少一第二導電接點313。於圖3所示之實施例中,第一基板31包含多個金屬層,且彼此以內連接結構連接而形成所需之電路。最上層之金屬層部分曝露於第一基板31之表面,以作為固定電極311、第一導電接點312以及第二導電接點313。
Please refer to FIG. 3, a force sensor according to an embodiment of the present invention includes a
第二基板32包含一第一表面(即圖3所示之第二基板32之朝下表面)、一相對之第二表面以及一微機電系統元件323。第二基板32以第一表面朝向
第一基板31設置於第一基板31,並與第一基板31之第一導電接點312電性連接。舉例而言,第二基板32以至少一第二連接部321以及第二連接部321端部之導電材料322與第一基板31之第一導電接點312接合。微機電系統元件323與第一基板31之固定電極311相對應,以形成一感測電容。可以理解的是,隨著微機電系統元件323相對於固定電極311運動將造成感測電容之電容值變化,並輸出相對應之偵測訊號。
The
第三基板33設置於第二基板32之第二表面(即圖3所示之第二基板32之朝上表面)。舉例而言,第三基板33藉由第一連接部331與第二基板32之第二表面連接,以作為蓋體。此外,第三基板33包含一凸柱332,其與第二基板32之微機電系統元件323連接。封裝體36則覆蓋於第三基板33上。舉例而言,接合後之第一基板31、第二基板32以及第三基板33設置封裝基板34上,接著透過打線製程以引線35a電性連接第一基板31之第二導電接點313以及封裝基板34,最後再以封裝體36包覆第一基板31、第二基板32、第三基板33以及引線35a,以保護上述元件。第一基板31即可透過第二導電接點313以及封裝基板34之外部導電接點341與外部電性連接。
The
依據圖3所示之結構,當第三基板33受到按壓而產生形變時,微機電系統元件323將藉由凸柱332而隨著第三基板33運動。藉由量測感測電容之電容值變化量,力量感測器即可判斷是否被按壓以及按壓的力道。換言之,本發明之力量感測器之微機電系統元件323不會直接承受按壓之應力,因此不易因反覆按壓而損壞。此外,如圖3所示,設置第三基板33可使力量感測器內之引線35a遠離按壓所產生之應力源,因此打線以及裝置之可靠度可大幅提升。另需說明的是,本發明之力量感測器除了可藉由調整微機電系統元件323之厚度、微機電系統元件323之彈性臂設計以及封裝體之厚度或材料來調整不同的量測範圍,還能
夠藉由調整第三基板之厚度來控制不同的量測範圍,例如10牛頓、100牛頓或更高。因此,不同量測範圍之力量感測器能夠以相同之組裝製程進行封裝。
According to the structure shown in FIG. 3, when the
於一實施例中,第一基板31可包含驅動電路及/或感測電路等。舉例而言,於第一基板31中可使用類比及/或數位電路,其通常係以特定應用積體電路(Application-specific integrated circuit,ASIC)設計之電路實施。但不限於此,於一實施例中,第一基板31亦可稱為電極基板。舉例而言,第一基板10可為任何具有適宜機械剛性的基板,包括互補式金氧半導體(CMOS)基板、玻璃基板等。請參照圖4,本發明之力量感測器包含一特定應用積體電路晶片37。圖4所示之實施例中,第一基板31堆疊於特定應用積體電路晶片37上,第一基板31之第二導電接點313以引線35a與特定應用積體電路晶片37電性連接,特定應用積體電路晶片37再以引線35b與封裝基板34電性連接。依據此架構,第一基板31即可透過第二導電接點313、特定應用積體電路晶片37以及封裝基板34之外部導電接點341與外部電性連接。可以理解的是,第一基板31與特定應用積體電路晶片並列設置亦能夠實現本發明之力量感測器。
In an embodiment, the
請再參照圖3,於一實施例中,第一基板31更包含至少一參考電極314,而第二基板32包含至少一參考元件324,其與第一基板31之參考電極314相對應,以形成一參考電容。參考電容能夠與感測電容組成一差分電容對,如此可提升量測之精確度。需說明的是,第二基板32之參考元件324可為一固定元件,如圖3所示。但不限於此,第二基板32之參考元件324亦可為一可動元件。舉例而言,請參照圖5,第二基板32之微機電系統元件323以及參考元件324以第二連接部321作為錨點,形成類似一蹺蹺板結構。依據此結構,微機電系統元件323受到按壓應力而向下運動時,參考元件324將向上運動,因此,微機電系統元件323之微小運動量可藉由感測電容之變化量以及參考電容之變化量之差值量測出來,進而提升量測之精確度。
3 again, in one embodiment, the
請參照圖6,於一實施例中,封裝體36包含一突出部361。突出部361與微機電系統元件323相對應。換言之,突出部361與第三基板33相對應,更精確而言,突出部361與第三基板33之凸柱332相對應。依據此結構,當組裝公差導致不同偏移量時,突出部361能夠使按壓之應力集中在突出部361,進而使本發明之力量感測器在不同偏移量之組裝條件下仍能輸出較為一致的偵測訊號。
Please refer to FIG. 6, in one embodiment, the
請參照圖7,於一實施例中,本發明之力量感測器包含一突出件38,其設置於封裝體36上。突出件38包含一凸塊381,其與微機電系統元件323相對應。相似於封裝體36之突出部361,凸塊381相對於封裝體36較為突出,因此凸塊381能夠使按壓之應力集中在凸塊381,進而使本發明之力量感測器能容許較大的組裝公差。於圖7所示之實施例中,凸塊381之一頂表面為一平面,但不限於此。請參照圖8,於一實施例中,凸塊381之頂表面可為一曲面。可以理解的是,凸塊381能夠以膠體39黏著於封裝體36上。
Please refer to FIG. 7, in one embodiment, the force sensor of the present invention includes a protruding
請參照圖9,於一實施例中,突出件38包含一凸塊381以及一平板382,其中平板382設置於凸塊381以及封裝體36之間。舉例而言,突出件38可為一體成型之元件,亦即凸塊381以及平板382為單一元件,其材料可為金屬。平板382之一投影區域可等於或小於第三基板33。於圖9所示之實施例中,平板382對應於第三基板33之形變區域。於一實施例中,請參照圖10,平板382之一投影區域可大於第三基板33,覆蓋封裝體36之上表面。同樣的,凸塊381之一頂表面可為平面(如圖9所示)或為一曲面(如圖10所示)。需說明的是,藉由調整平板382的厚度亦可控制本發明之力量感測器的量測範圍。
Please refer to FIG. 9, in one embodiment, the protruding
於一實施例中,請參照圖11以及圖12,平板382可設置於凸塊381上,亦即凸塊381位於封裝體36以及平板382之間。依據此結構,按壓於平板382時,應力可集中至凸塊381,因此,本發明之力量感測器所容許的組裝公差能進
一步增加。於一實施例中,平板382包含至少一連接腳383,其連接至封裝體36,如此可避免平板382因按壓而傾斜。
In one embodiment, referring to FIG. 11 and FIG. 12, the
請參照圖13,於一實施例中,凸塊381可利用點膠的方式,在封裝體36設置由膠體構成的凸塊381。可以理解的是,凸塊381之材料為高分子聚合物。
Please refer to FIG. 13, in one embodiment, the
請參照圖14a至圖14j,以說明圖3所示之本發明力量感測器之製造方法。雖然這些剖面圖中僅顯示單一裝置,但可以理解的是,於單一基板上可製造多個晶粒。因此,這些圖中所示的單一裝置僅為代表,並非用以限制本發明於單一裝置之製造方法。於本說明書中將更完整的描述以晶圓級製程於一基板上製造多個晶粒或裝置。於製造裝置後,再利用切割(dicing)與切單(singulation)技術產生單獨的裝置封裝以於各種應用中使用。 Please refer to FIGS. 14a to 14j to illustrate the manufacturing method of the force sensor of the present invention shown in FIG. 3. Although these cross-sectional views only show a single device, it is understandable that multiple dies can be manufactured on a single substrate. Therefore, the single device shown in these figures is only a representative, and is not intended to limit the manufacturing method of the present invention to a single device. In this specification, a more complete description will be given to fabricate multiple dies or devices on a substrate using a wafer-level process. After the device is manufactured, dicing and singulation technologies are then used to produce individual device packages for use in various applications.
請參照圖14a,首先,提供一第三基板33,並定義出至少一第一連接部331以及一凸柱332。舉例而言,可在第三基板33上蝕刻出適當之凹槽333,即可定義出突出之第一連接部331以及凸柱332。
Please refer to FIG. 14a. First, a
接著,提供一第二基板32,其包含一第一表面32a以及一相對之第二表面32b,並將第二基板32以第二表面32b朝向第三基板33,接合於第三基板33之第一連接部331以及凸柱332,如圖14b所示。舉例而言,第二基板32以及第三基板33能夠以熔接(fusion bond)方式接合。於一實施例中,可在第二基板32接合於第三基板33後,薄化第二基板32。舉例而言,薄化後之第二基板32厚度等於或小於30μm。
Next, a
接著,於第二基板32之第一表面32a定義出至少一第二連接部321,如圖14c所示。於一實施例中,依據後續接合第二基板32與第一基板31所採用之接合方法,可在第二連接部321上形成適當之接合材料。舉例而言,接合材料可為一導電材料322,如圖14d所示。
Next, at least one second connecting
接著,請參照圖14e,於第二基板32定義出一微機電系統元件323。需強調的,第二基板32之微機電系統元件323需與第三基板33之凸柱332連接。於一實施例中,定義微機電系統元件323時,亦可同時於第二基板32定義出至少一參考元件324。
Next, referring to FIG. 14e, a
接著,請參照圖14f,提供一第一基板31,其包含一固定電極311、至少一第一導電接點312以及至少一第二導電接點313。於一實施例中,第一基板31更包含一參考電極314。
Next, referring to FIG. 14f, a
接著,請參照圖14g,將第二基板32與第一基板31接合,其中第一基板31之第一導電接點312與第二基板32之第二連接部321透過導電材料322電性連接,且微機電系統元件323與固定電極311相對應。於一實施例中,第二基板32與第一基板31之接合能夠以共晶鍵合(eutectic bonding)、熔接、銲接以及黏合至少其中之一加以實現。
Next, referring to FIG. 14g, the
接著,請參照圖14h,薄化第三基板33至適當厚度。接著,移除部分第三基板33,以曝露出第一基板31之第二導電接點313,如圖14i所示。接著,切割第一基板31,以進行後續之封裝程序。舉例而言,請參照圖14j,將切單後之第一基板31設置於封裝基板34,並以引線35a電性連接第一基板31之第二導電接點313以及封裝基板34。最後,以一封裝體36覆蓋第三基板33即可形成如圖3所示之力量感測器。可以理解的是,利用適當的模具進行模封(molding),即可在封裝體36上形成一突出部361,如圖6所示。
Next, referring to FIG. 14h, thin the
不同封裝設計之力量感測器則以不同的封裝程序加以實現。舉例而言,封裝圖4所示之力量感測器時,需先將第一基板31設置於特定應用積體電路晶片37上,再以引線35a電性連接第一基板31之至少一第二導電接點313以及特定應用積體電路晶片37,最後再以封裝體36封裝即可。可以理解的是,本發明
之力量感測器亦可與特定應用積體電路晶片並列設置於封裝基板,再經打線以及模封程序完成封裝。
The force sensors of different package designs are implemented in different package procedures. For example, when the force sensor shown in FIG. 4 is packaged, the
於一實施例中,本發明之力量感測器之製造方法更包含在封裝體36上設置包含一凸塊381之一突出件38,如圖7至圖12所示。或者,利用點膠方式在封裝體36上形成凸塊381,如圖13所示。
In one embodiment, the manufacturing method of the force sensor of the present invention further includes disposing a
綜合上述,本發明之力量感測器是於一封裝體以及一微機電系統元件之間設置一第三基板作為微機電系統元件之蓋體,使微機電系統元件與封裝體在空間上分離。且蓋體與微機電系統元件連接,使微機電系統元件隨著蓋體形變而產生相對應之運動量。依據此結構,本發明之力量感測器內之引線可遠離按壓所產生之應力源,且微機電系統元件不易因反覆按壓而損壞,因此裝置之可靠度可大幅提升。此外,不同規格之力量感測器可藉由調整第三基板之厚度加以控制,因此不同量測範圍之力量感測器能夠以相同之組裝製程進行封裝。 In summary, in the force sensor of the present invention, a third substrate is arranged between a package body and a MEMS device as the cover of the MEMS device, so that the MEMS device and the package body are separated in space. And the cover body is connected with the MEMS element, so that the MEMS element generates a corresponding amount of movement along with the deformation of the cover body. According to this structure, the leads in the force sensor of the present invention can be far away from the stress source caused by pressing, and the MEMS components are not easily damaged by repeated pressing, so the reliability of the device can be greatly improved. In addition, force sensors of different specifications can be controlled by adjusting the thickness of the third substrate, so force sensors of different measurement ranges can be packaged with the same assembly process.
以上所述之實施例僅是為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。 The above-mentioned embodiments are only to illustrate the technical ideas and features of the present invention, and their purpose is to enable those who are familiar with the art to understand the content of the present invention and implement them accordingly. When they cannot be used to limit the patent scope of the present invention, That is, all equal changes or modifications made in accordance with the spirit of the present invention should still be covered by the patent scope of the present invention.
31:第一基板 31: The first substrate
311:固定電極 311: fixed electrode
312:第一導電接點 312: The first conductive contact
313:第二導電接點 313: second conductive contact
314:參考電極 314: Reference electrode
32:第二基板 32: second substrate
321:第二連接部 321: second connecting part
322:導電材料 322: conductive material
323:微機電系統元件 323: MEMS components
324:參考元件 324: Reference Components
33:第三基板 33: third substrate
331:第一連接部 331: first connection part
332:凸柱 332: Convex Column
34:封裝基板 34: Package substrate
341:外部導電接點 341: External conductive contact
35a:引線 35a: Lead
36:封裝體 36: Package body
Claims (25)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107115601A TWI718373B (en) | 2018-05-08 | 2018-05-08 | Force sensor and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107115601A TWI718373B (en) | 2018-05-08 | 2018-05-08 | Force sensor and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201947198A TW201947198A (en) | 2019-12-16 |
| TWI718373B true TWI718373B (en) | 2021-02-11 |
Family
ID=69582989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107115601A TWI718373B (en) | 2018-05-08 | 2018-05-08 | Force sensor and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI718373B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115403005B (en) * | 2022-11-02 | 2023-01-31 | 苏州敏芯微电子技术股份有限公司 | Pressure sensing module, resistance type pressure sensor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867080A (en) * | 2010-05-21 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | Bulk silicon micromechanical resonator and manufacturing method thereof |
| TW201402451A (en) * | 2012-07-13 | 2014-01-16 | Taiwan Semiconductor Mfg | MEMS devices, packaged MEMS devices, and method of manufacture thereof |
| US20170283250A1 (en) * | 2016-03-24 | 2017-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-pressure mems package |
-
2018
- 2018-05-08 TW TW107115601A patent/TWI718373B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867080A (en) * | 2010-05-21 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | Bulk silicon micromechanical resonator and manufacturing method thereof |
| TW201402451A (en) * | 2012-07-13 | 2014-01-16 | Taiwan Semiconductor Mfg | MEMS devices, packaged MEMS devices, and method of manufacture thereof |
| US20170283250A1 (en) * | 2016-03-24 | 2017-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-pressure mems package |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201947198A (en) | 2019-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110411614B (en) | Force sensor and method for manufacturing the same | |
| US11946817B2 (en) | Integrated digital force sensors and related methods of manufacture | |
| US9846097B2 (en) | Pressure sensor with variable sense gap | |
| US10538428B2 (en) | MEMS device and method for manufacturing the same | |
| CN111204703B (en) | Method of fabricating a microelectromechanical systems device | |
| TWI718373B (en) | Force sensor and manufacture method thereof | |
| CN105189337B (en) | Microelectromechanical device and manufacturing method | |
| CN117246972B (en) | Micro-electromechanical force sensor and preparation method thereof | |
| US10281350B2 (en) | Pressure sensor and manufacture method thereof | |
| TWI692623B (en) | Force sensor | |
| US11312624B2 (en) | MEMS device and manufacturing method thereof | |
| CN111473893B (en) | Force sensor | |
| TWI699330B (en) | Mems device and manufacturing method thereof | |
| JP2009294152A (en) | Capacity sensor package |