TWI715991B - Aqueous composition for depositing a tin silver alloy and method for electrolytically depositing such an alloy - Google Patents
Aqueous composition for depositing a tin silver alloy and method for electrolytically depositing such an alloy Download PDFInfo
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Abstract
Description
本發明係關於一種用於沉積錫銀合金之水性組合物;一種用於將該合金電解沉積於基板上之方法;及一種該組合物之用途,其用於將錫銀合金焊料凸塊或錫銀合金焊蓋電解沉積於支柱上。The present invention relates to an aqueous composition for depositing tin-silver alloys; a method for electrolytically depositing the alloy on a substrate; and a use of the composition to deposit tin-silver alloy solder bumps or tin The silver alloy welding cover is electrolytically deposited on the pillar.
在現代封裝技術中,觀測到尺寸減小的明顯趨勢,以實現電子裝置效能之上升及其功能之改良。已發現銅柱上之焊蓋為一個有趣的且有前景的習知焊球應用之替代物,對於用於微電子裝置中之覆晶應用尤其如此。In modern packaging technology, an obvious trend of size reduction is observed to realize the increase in the performance of electronic devices and the improvement of their functions. Solder caps on copper pillars have been found to be an interesting and promising alternative to conventional solder ball applications, especially for flip-chip applications in microelectronic devices.
銅柱上之焊蓋通常由兩個元件組成:(i)由形成例如圓柱的支柱之銅製成的結構元件及(ii)在該支柱之頂部的焊蓋。大量此類封蓋銅柱通常配置於晶粒上,該晶粒為晶圓之一部分。與習知焊球應用相比,銅柱上之焊蓋由於封蓋支柱中相當大量之銅而提供改良之熱性能及電性能,其提供極佳電連接及增加之傳導率。該焊蓋提供各別支柱與相應特徵(例如另一晶粒之支柱)之間的電連接以及機械連接。The welding cap on the copper pillar is usually composed of two elements: (i) a structural element made of copper forming a pillar, such as a cylinder, and (ii) the welding cap on the top of the pillar. A large number of such capped copper pillars are usually arranged on the die, which is a part of the wafer. Compared with conventional solder ball applications, the solder cap on the copper pillar provides improved thermal and electrical properties due to the substantial amount of copper in the capping pillar, which provides excellent electrical connection and increased conductivity. The solder cap provides electrical and mechanical connections between the individual pillars and corresponding features (such as the pillars of another die).
銅柱上之焊蓋之額外優勢為,相較於球狀習知焊球應用,支柱之形狀細長。此允許兩個相鄰支柱之間的距離(亦稱作間距)減小,此係高級封裝之關鍵因素。The additional advantage of the solder cap on the copper pillar is that the shape of the pillar is slender compared to the spherical conventional solder ball application. This allows the distance (also called pitch) between two adjacent pillars to be reduced, which is a key factor in advanced packaging.
焊蓋通常包括錫且在許多情況下為錫銀合金;通常不含鉛。此合金通常提供極佳可焊性,且分別為先前所用之含鉛焊蓋及焊球之合適替代物。The solder cap usually contains tin and in many cases is a tin-silver alloy; usually it does not contain lead. This alloy generally provides excellent solderability and is a suitable replacement for the leaded solder caps and solder balls previously used.
沉積該等錫銀合金為此項技術中已知的。舉例而言,JP 2006-265573 A揭示一種無氰化物之錫銀合金電鍍浴,其改良自錫銀浴獲得之電沉積膜之可焊接性及外觀。Depositing these tin-silver alloys is known in the art. For example, JP 2006-265573 A discloses a cyanide-free tin-silver alloy electroplating bath, which improves the solderability and appearance of electrodeposited films obtained from the tin-silver bath.
EP 0 854 206 B1係關於一種實質上不含氰化物之酸性錫銀合金電鍍浴及一種用於將錫銀合金電鍍於基板上之方法。
US 2014/0251818 A1提及一種不含氰化物之錫合金電鍍溶液,其具有出色的連續穩定性,以及一種使用錫合金電鍍溶液將錫合金電鍍於導電物件上之方法。錫合金電鍍溶液含有錫離子及銀、銅、鉍、銦、鈀、鉛、鋅或鎳之一或多種額外金屬離子及具有半胱胺酸殘基之肽。US 2014/0251818 A1 mentions a cyanide-free tin alloy electroplating solution, which has excellent continuous stability, and a method for electroplating tin alloy on conductive objects using a tin alloy electroplating solution. The tin alloy electroplating solution contains tin ions, one or more additional metal ions of silver, copper, bismuth, indium, palladium, lead, zinc or nickel, and peptides with cysteine residues.
WO 03/046260 A2係關於一種用於電沉積銀錫合金之電解浴,除充當pH值小於1.5之溶劑的水以外,其含有水溶性銀化合物、水溶性錫化合物及有機錯合劑。為了獲得能夠用任何類型組合物均勻沉積緻密錫銀合金之穩定電解浴,使用具有硫基及胺基之脂族錯合劑作為錯合劑,由此該等官能基鍵結至不同碳原子。WO 03/046260 A2 relates to an electrolytic bath used for electrodeposition of silver-tin alloys. In addition to water serving as a solvent with a pH value of less than 1.5, it contains water-soluble silver compounds, water-soluble tin compounds and organic complexing agents. In order to obtain a stable electrolytic bath capable of uniformly depositing dense tin-silver alloys with any type of composition, aliphatic complexing agents with sulfur groups and amine groups are used as complexing agents, whereby these functional groups are bonded to different carbon atoms.
EP 1 553 211 B1係關於一種錫銀銅電鍍溶液,其包含30-90重量%之水、磺酸、錫離子、銅離子及銀離子,其中銀離子之濃度為0.01至0.1 mol/L,錫離子之濃度為0.21至2 mol/L,銅離子之濃度為0.002至0.02 mol/L,且銀離子與銅離子之莫耳比在4.5至5.58之範圍內。
US 6,607,653 B1係關於一種含有可溶金屬化合物及特定含硫化合物之錫銅合金電鍍浴、錫銅鉍合金電鍍浴或錫銅銀合金電鍍浴。US 6,607,653 B1 relates to a tin-copper alloy electroplating bath, tin-copper-bismuth alloy electroplating bath or tin-copper-silver alloy electroplating bath containing soluble metal compounds and specific sulfur-containing compounds.
EP 2 221 396 A1係關於一種組合物,其包含一或多種錫離子源、一或多種合金金屬離子源,該等金屬離子係選自由以下組成之群:銀離子、銅離子及鉍離子、一或多種黃酮化合物及一或多種具有下式之化合物:HOR(R'')SR'SR(R'')OH,其中R、R'及R''為相同或不同的,且為具有1至20個碳原子之伸烷基。
儘管有已知方法,但沉積錫銀合金(通常藉助於電解沉積手段進行)需要高度複雜及精確之沉積方法以獲得具有高均勻性量測值之焊帽。只有到那時才能有效地減少或甚至完全避免支柱上樹枝狀結晶的出現。此類樹枝狀結晶為不規則不均勻的焊蓋,甚至有可能橋接兩個相鄰支柱。在此狀況下,攜帶大量具有焊蓋之支柱之整個晶粒可能變得無用,且需要扔掉。仍缺少分別地獲得具有基本上無樹枝狀結晶之焊蓋之銅柱的適合方法及組合物,且極需要其來降低次品之數目。Although there are known methods, the deposition of tin-silver alloys (usually by electrolytic deposition) requires highly complex and precise deposition methods to obtain welding caps with high uniformity measurements. Only then can the appearance of dendrites on the pillars be effectively reduced or even completely avoided. Such dendrites are irregular and uneven welding caps, and may even bridge two adjacent pillars. In this situation, the entire die carrying a large number of pillars with solder caps may become useless and need to be thrown away. There is still a lack of suitable methods and compositions for separately obtaining copper pillars with substantially dendritic-free solder caps, and they are extremely needed to reduce the number of defective products.
本發明之目的 本發明之目的為提供一種用於沉積錫銀合金之水性組合物,其克服上文所提及之問題。詳言之,目的尤其為獲得具有高均勻性之錫銀合金,例如從而獲得支柱上之極均勻焊帽且基本上避免樹枝狀結晶(如上文所定義);尤其在20 A/dm2 至30 A/dm2 範圍內之相當高的電流密度下。此外,目的為該錫銀合金亦可用於形成具有上文所提及之優勢之焊料凸塊。 Objective of the present invention The objective of the present invention is to provide an aqueous composition for depositing tin-silver alloys, which overcomes the above-mentioned problems. In detail, the purpose is especially to obtain a tin-silver alloy with high uniformity, for example to obtain extremely uniform welding caps on the pillars and substantially avoid dendrites (as defined above); especially at 20 A/dm 2 to 30 At a very high current density in the A/dm 2 range. In addition, the purpose is that the tin-silver alloy can also be used to form solder bumps with the advantages mentioned above.
本發明之另一目的為亦提供用於電解沉積該錫銀合金之相應方法,其尤其用於將錫銀合金焊料凸塊及錫銀合金焊蓋電解沉積於支柱上,從而抑制焊蓋及焊料凸塊兩者的樹枝狀結晶之出現。Another object of the present invention is to also provide a corresponding method for electrolytic deposition of the tin-silver alloy, which is especially used for electrolytically depositing tin-silver alloy solder bumps and tin-silver alloy solder caps on pillars, thereby suppressing solder caps and solder The appearance of dendrites of both bumps.
本發明之概述 此等目的藉由用於沉積錫銀合金之水性組合物解決,該組合物包含 (a) 錫離子, (b) 銀離子, (c) 至少一種第一化合物,其獨立地選自由以下組成之群:未經取代之雙(胺基苯基)二硫化物、經取代之雙(胺基苯基)二硫化物、未經取代之二吡啶基二硫化物及經取代之二吡啶基二硫化物,以及 (d) 至少一種式(II)之第二化合物 (II)及其鹽, 其中獨立地 X表示包含一或多個氫硫基之C1至C10烷基部分, R1 表示氫、甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基,且 R2 表示甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基。 SUMMARY OF THE INVENTION These objects are solved by an aqueous composition for depositing tin-silver alloys, the composition comprising (a) tin ions, (b) silver ions, (c) at least one first compound, which are independently selected Free from the group consisting of: unsubstituted bis(aminophenyl) disulfide, substituted bis(aminophenyl) disulfide, unsubstituted dipyridyl disulfide and substituted two Pyridyl disulfide, and (d) at least one second compound of formula (II) (II) and salts thereof, wherein independently X represents a C1 to C10 alkyl moiety containing one or more sulfhydryl groups, R 1 represents hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 To C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl or substituted benzyl, and R 2 represents methyl, ethyl, linear C3 to C5 alkyl , Branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl or substituted benzyl.
此外,另一目的藉由用於將錫銀合金電解沉積於基板上之方法解決,該方法包含以下步驟: (A) 提供該基板, (B) 提供根據本發明之水性組合物,較佳如本文全文所述為較佳的, (C) 使該基板與該水性組合物接觸且供應電流,使得該錫銀合金電解沉積於該基板上。In addition, another object is solved by a method for electrolytically depositing a tin-silver alloy on a substrate. The method includes the following steps: (A) Provide the substrate, (B) Provide an aqueous composition according to the present invention, preferably as described throughout this article, (C) contacting the substrate with the aqueous composition and supplying electric current, so that the tin-silver alloy is electrolytically deposited on the substrate.
另外,該等目的藉由使用根據本發明之水性組合物來解決,較佳如本文全文所述為較佳的,該水性組合物用於將錫銀合金焊料凸塊或錫銀合金焊蓋電解沉積於金屬柱上,較佳用於將錫銀合金焊蓋電解沉積於銅柱上。In addition, these objects are solved by using the aqueous composition according to the present invention, preferably as described throughout the text, the aqueous composition is used to electrolyze tin-silver alloy solder bumps or tin-silver alloy solder caps Deposited on metal pillars, preferably used to electrolytically deposit tin-silver alloy solder caps on copper pillars.
吾人之實驗顯示如上文所定義之水性組合物、方法及用途產生極佳的均勻錫銀焊蓋。此等蓋子可極好地用於金屬柱,尤其銅柱(參見下文之實例)。此外,令人印象深刻地減少或甚至完全防止樹枝狀結晶形成。Our experiments show that the water-based composition, method and use as defined above produce excellent uniform tin-silver solder caps. These covers are excellent for metal pillars, especially copper pillars (see examples below). In addition, the formation of dendrites is reduced or even completely prevented.
在本發明之上下文中,術語「至少一種」表示(且可與之交換)「一種、兩種、三種或超過三種」。In the context of the present invention, the term "at least one" means (and can be exchanged with) "one, two, three or more than three".
術語「獨立地」表示例如在至少一種式(II)之第二化合物中,在式(II)之第一化合物中之X、R1 及R2 係獨立地選自本發明之水性組合物中之式(II)之第二化合物及另外化合物中之X、R1 及R2 。此外,例如至少一種第一化合物係獨立地選自多個化合物群。此意謂若例如選擇兩種第一化合物,則各化合物可選自不同化合物組,例如一種化合物為經取代之雙(胺基苯基)二硫化物,另一種為經取代之二吡啶基二硫化物。換言之,該兩種第一化合物之第一化合物選擇獨立於該兩種第一化合物之第二種第一化合物選擇。The term "independently" means that, for example, in at least one second compound of formula (II), X, R 1 and R 2 in the first compound of formula (II) are independently selected from the aqueous composition of the present invention X, R 1 and R 2 in the second compound of formula (II) and other compounds. In addition, for example, at least one first compound is independently selected from a plurality of compound groups. This means that if, for example, two first compounds are selected, each compound can be selected from a different group of compounds. Sulfide. In other words, the first compound selection of the two first compounds is independent of the second first compound selection of the two first compounds.
本發明之組合物為水性組合物,其意謂水為主要組份。因此,以水性組合物之總重量計,水性組合物超過50重量%,較佳至少60重量%,甚至更佳至少70重量%,最佳80重量%或更高為水。較佳地,水性組合物實質上不含有機溶劑;更佳完全不含有機溶劑。此外,水性組合物較佳為水溶液,亦即為均質且因此較佳不含任何粒子。The composition of the present invention is an aqueous composition, which means that water is the main component. Therefore, based on the total weight of the aqueous composition, the aqueous composition exceeds 50% by weight, preferably at least 60% by weight, even more preferably at least 70% by weight, and most preferably 80% by weight or more is water. Preferably, the aqueous composition contains substantially no organic solvent; more preferably, it contains no organic solvent at all. In addition, the aqueous composition is preferably an aqueous solution, that is, homogeneous and therefore preferably does not contain any particles.
在本發明之上下文中,術語「至少」結合特定值表示(且可與之交換)此值或大於此值。舉例而言,「至少70重量%」表示(且可與之交換)「70重量%或大於70重量%」。In the context of the present invention, the term "at least" in combination with a specific value means (and can be exchanged with) this value or greater than this value. For example, "at least 70% by weight" means (and can be exchanged for) "70% by weight or greater than 70% by weight".
在本發明之上下文中,術語「實質上不含」對象物(例如,化合物、材料等)獨立地表示該對象物完全不存在或僅以極小及無干擾之量(範圍中)存在而不影響本發明之預期目的。舉例而言,可能無意地添加或利用此對象物,例如作為不可避免的雜質。「實質上不含」較佳表示以本發明之水性組合物之總重量計(針對該水性組合物定義時)為0 (零) ppm至50 ppm,或以錫銀合金之總重量計(針對該合金定義時);較佳0 ppm至25 ppm,更佳0 ppm至10 ppm,甚至更佳0 ppm至5 ppm,最佳0 ppm至1 ppm。零ppm表示完全不包含相應對象物。In the context of the present invention, the term "substantially free of" an object (for example, a compound, material, etc.) independently means that the object does not exist at all or exists only in a minimal and non-interfering amount (in the range) without affecting The intended purpose of the present invention. For example, the object may be added or used unintentionally, for example as an inevitable impurity. "Substantially free" preferably means 0 (zero) ppm to 50 ppm based on the total weight of the aqueous composition of the present invention (when defined for the aqueous composition), or based on the total weight of the tin-silver alloy (for When the alloy is defined); preferably 0 ppm to 25 ppm, more preferably 0 ppm to 10 ppm, even more preferably 0 ppm to 5 ppm, most preferably 0 ppm to 1 ppm. Zero ppm means that the corresponding object is not included at all.
較佳為本發明之水性組合物,其中該組合物為酸性的,較佳地該組合物具有在-2至+4範圍內、更佳在-1至+2範圍內、最佳在-0.5至+1.2範圍內之pH。一般而言,酸性組合物(尤其具有如上文所定義之pH範圍)通常不含氰化物,其出於環境原因是合需要的。因此,本發明之組合物亦較佳不含氰化物。此外,相比於pH顯著高於4或甚至為鹼性之組合物,上文所提及之pH範圍導致沉積錫銀合金之品質改良。此外,若pH在上文所定義之pH範圍內,則穩定性提高。尤其若pH顯著高於4或甚至為鹼性,則觀測到不當的析出。為了防止pH顯著高於4或甚至為鹼性之組合物中之析出,通常利用極強效之錯合劑,諸如對環境有害之氰化物。然而,此可在本發明之組合物及方法中成功地避免。因此,簡化廢水處理且防止環境問題。在本發明之上下文中,參考20℃溫度下的pH。It is preferably the aqueous composition of the present invention, wherein the composition is acidic, preferably the composition has a range of -2 to +4, more preferably a range of -1 to +2, and most preferably -0.5 To a pH in the range of +1.2. In general, acidic compositions (especially having a pH range as defined above) generally do not contain cyanide, which is desirable for environmental reasons. Therefore, the composition of the present invention is also preferably free of cyanide. In addition, the pH range mentioned above results in improved quality of deposited tin-silver alloys compared to compositions with a pH significantly higher than 4 or even alkaline. In addition, if the pH is within the pH range defined above, the stability is improved. Especially if the pH is significantly higher than 4 or even alkaline, improper precipitation is observed. In order to prevent precipitation in compositions whose pH is significantly higher than 4 or even alkaline, very powerful complexing agents such as cyanide which are harmful to the environment are usually used. However, this can be successfully avoided in the composition and method of the present invention. Therefore, wastewater treatment is simplified and environmental problems are prevented. In the context of the present invention, reference is made to pH at a temperature of 20°C.
本發明之水性組合物係用於沉積錫銀合金,較佳實質上不含硫之錫銀合金。The aqueous composition of the present invention is used to deposit tin-silver alloys, preferably tin-silver alloys that are substantially free of sulfur.
本發明之水性組合物包含(a)錫離子及(b)銀離子以便沉積錫銀合金。在水性組合物中,錫離子較佳為錫(II)離子且銀離子較佳為銀(I)離子。The aqueous composition of the present invention contains (a) tin ions and (b) silver ions to deposit tin-silver alloys. In the aqueous composition, the tin ion is preferably tin(II) ion and the silver ion is preferably silver(I) ion.
較佳為本發明之水性組合物,其中在水性組合物中,以水性組合物之總體積計,錫離子以在20 g/L至200 g/L範圍內,較佳在25 g/L至150 g/L範圍內,更佳在30 g/L至120 g/L範圍內,甚至更佳在35 g/L至100 g/L範圍內,最佳在40 g/L至90 g/L範圍內之總濃度存在。顯著低於20 g/L之濃度通常導致不當的低沉積速率。若濃度顯著超過200 g/L,則經常觀測到溶解度問題。在上文所定義之較佳濃度範圍內獲得沉積速率與溶解度之理想平衡。已獲得濃度分別在35 g/L至100 g/L及40 g/L至90 g/L範圍內之最佳結果。Preferably it is the aqueous composition of the present invention, wherein in the aqueous composition, based on the total volume of the aqueous composition, tin ions are in the range of 20 g/L to 200 g/L, preferably 25 g/L to In the range of 150 g/L, more preferably in the range of 30 g/L to 120 g/L, even more preferably in the range of 35 g/L to 100 g/L, most preferably in the range of 40 g/L to 90 g/L The total concentration within the range exists. Concentrations significantly below 20 g/L usually result in unduly low deposition rates. If the concentration significantly exceeds 200 g/L, solubility problems are often observed. The ideal balance of deposition rate and solubility is obtained within the preferred concentration range defined above. The best results have been obtained with concentrations ranging from 35 g/L to 100 g/L and 40 g/L to 90 g/L.
錫離子係來自錫離子源。該等錫離子之錫離子源較佳為至少一種錫鹽,更佳為至少一種無機錫鹽及/或至少一種有機錫鹽。較佳之無機錫鹽係選自由以下組成之群:氧化錫、硫酸錫及硫化錫。較佳之有機錫鹽係選自由以下組成之群:乙酸錫、檸檬酸錫、草酸錫及烷基磺酸錫。更佳為本發明之水性組合物,其中錫離子係來自至少一種有機錫鹽,較佳來自至少一種烷基磺酸錫。在本發明之水性組合物中,最佳為甲磺酸錫。較佳地,在各錫離子源中,錫以錫(II)形式存在。The tin ion system comes from a tin ion source. The tin ion source of the tin ions is preferably at least one tin salt, more preferably at least one inorganic tin salt and/or at least one organic tin salt. The preferred inorganic tin salt is selected from the group consisting of tin oxide, tin sulfate and tin sulfide. The preferred organotin salts are selected from the group consisting of tin acetate, tin citrate, tin oxalate and tin alkyl sulfonate. More preferably, it is the aqueous composition of the present invention, wherein the tin ion is derived from at least one organotin salt, preferably from at least one tin alkyl sulfonate. In the aqueous composition of the present invention, tin methanesulfonate is most preferred. Preferably, in each tin ion source, tin is present in the form of tin (II).
較佳為本發明之水性組合物,其中在水性組合物中,以水性組合物之總體積計,銀離子以在0.1 g/L至10 g/L範圍內,較佳在0.2 g/L至8 g/L範圍內,更佳在0.3 g/L至6 g/L範圍內,甚至更佳在0.4 g/L至4 g/L範圍內,最佳在0.5 g/L至2 g/L範圍內之總濃度存在。顯著低於0.1 g/L之濃度通常導致錫銀合金中銀之量不足,從而產生相應焊蓋及焊料凸塊中之不當的機械特性及電學特性。若濃度顯著超過10 g/L,則組合物不夠穩定且有時觀測到析出。此外,通常有過多銀併入錫銀合金中,顯著提高相應焊蓋之熔點,其在後續回焊製程中為不當的。獲得之理想熔點係在上文所定義之較佳濃度範圍內,最佳分別在0.4 g/L至4 g/L及0.5 g/L至2 g/L範圍內。Preferably it is the aqueous composition of the present invention, wherein in the aqueous composition, based on the total volume of the aqueous composition, the silver ion is in the range of 0.1 g/L to 10 g/L, preferably 0.2 g/L to In the range of 8 g/L, more preferably in the range of 0.3 g/L to 6 g/L, even more preferably in the range of 0.4 g/L to 4 g/L, most preferably in the range of 0.5 g/L to 2 g/L The total concentration within the range exists. Concentrations significantly lower than 0.1 g/L usually result in insufficient amounts of silver in the tin-silver alloy, resulting in improper mechanical and electrical properties in the corresponding solder caps and solder bumps. If the concentration significantly exceeds 10 g/L, the composition is not stable enough and precipitation is sometimes observed. In addition, usually too much silver is incorporated into the tin-silver alloy, which significantly increases the melting point of the corresponding solder cap, which is improper in the subsequent reflow process. The ideal melting point obtained is within the preferred concentration range defined above, the best being within the range of 0.4 g/L to 4 g/L and 0.5 g/L to 2 g/L, respectively.
銀離子來自銀離子源。該等銀離子之銀離子源較佳為至少一種銀鹽,更佳為至少一種無機銀鹽及/或至少一種有機銀鹽。較佳之無機銀鹽係選自由以下組成之群:氧化銀、硫酸銀及硝酸銀。較佳之有機銀鹽係選自由以下組成之群:乙酸銀、檸檬酸銀、草酸銀及烷基磺酸銀。更佳為本發明之水性組合物,其中銀離子係來自至少一種有機銀鹽,較佳來自至少一種烷基磺酸銀。在本發明之水性組合物中,最佳為甲磺酸銀。較佳地,在各銀離子源中,銀以銀(I)形式存在。The silver ions come from a source of silver ions. The silver ion source of the silver ions is preferably at least one silver salt, more preferably at least one inorganic silver salt and/or at least one organic silver salt. The preferred inorganic silver salt is selected from the group consisting of silver oxide, silver sulfate and silver nitrate. The preferred organic silver salt is selected from the group consisting of silver acetate, silver citrate, silver oxalate and silver alkyl sulfonate. More preferably, it is the aqueous composition of the present invention, wherein the silver ion is derived from at least one organic silver salt, preferably from at least one silver alkyl sulfonate. In the aqueous composition of the present invention, silver methanesulfonate is most preferred. Preferably, in each silver ion source, silver exists in the form of silver (I).
最佳地,銀離子源以及錫離子源包含烷基磺酸鹽,更佳為烷基磺酸鹽。若藉助於烷基磺酸(再)調節本發明之水性組合物中之pH,則此為尤其較佳的。在此情況下,僅一種類型之有機酸陰離子存在於本發明之組合物中。Most preferably, the silver ion source and the tin ion source comprise alkyl sulfonate, more preferably alkyl sulfonate. This is especially preferred if the pH in the aqueous composition of the present invention is (re)adjusted by means of alkyl sulfonic acid. In this case, only one type of organic acid anion is present in the composition of the present invention.
較佳為本發明之水性組合物,其中錫離子與銀離子之莫耳比在200:1至5:1範圍內,較佳在150:1至10:1範圍內,更佳在125:1至12:1範圍內,最佳在100:1至15:1範圍內。若莫耳比顯著超過200:1,則通常銀不會充分地併入至錫銀合金中。若莫耳比顯著低於5:1,則在一些情況下,錫銀合金包含過多銀。然而,若莫耳比如上文所定義,尤其分別在125:1至12:1及100:1至15:1範圍內,則獲得極佳的均勻錫銀合金且在焊蓋之支柱中樹枝狀結晶受到很大程度上的抑制。Preferably it is the aqueous composition of the present invention, wherein the molar ratio of tin ion to silver ion is in the range of 200:1 to 5:1, preferably in the range of 150:1 to 10:1, more preferably in the range of 125:1 It is in the range of 12:1, preferably in the range of 100:1 to 15:1. If the molar ratio significantly exceeds 200:1, the silver will generally not be fully incorporated into the tin-silver alloy. If the molar ratio is significantly lower than 5:1, in some cases, the tin-silver alloy contains too much silver. However, if the mole is as defined above, especially in the range of 125:1 to 12:1 and 100:1 to 15:1, respectively, an excellent uniform tin-silver alloy is obtained and dendritic in the pillars of the solder cap Crystallization is largely suppressed.
極佳為本發明之組合物,其中該組合物實質上不含,較佳不包含鹵離子,最佳氯離子。首先,氯化銀極不溶於水性環境中。其次,在一些情況下已觀測到,尤其氯離子儘管以低量存在且未必導致不可溶氯化物之立即沉澱,其會導致錫銀合金中之沉積缺陷。因此,較佳不利用包含鹵陰離子,最佳氯離子之錫離子源及銀離子源。It is very preferably the composition of the present invention, wherein the composition is substantially free of halide ions, and most preferably, chloride ions. First, silver chloride is extremely insoluble in aqueous environments. Secondly, in some cases, it has been observed that, in particular, the presence of chloride ions in low amounts does not necessarily cause the immediate precipitation of insoluble chlorides, which can lead to deposition defects in tin-silver alloys. Therefore, it is better not to use the tin ion source and the silver ion source containing halide anions, optimal chloride ion.
在一些情況下,本發明之水性組合物為較佳的,其中該組合物另外包含銅(II)離子,以水性組合物之總體積計,總濃度較佳為0.06 g/L至5 g/L,總濃度更佳為0.3 g/L至4 g/L,總濃度甚至更佳為0.8 g/L至3 g/L。此組合物用於基本上沉積錫銀銅合金。In some cases, the aqueous composition of the present invention is preferred, wherein the composition additionally contains copper (II) ions, and the total concentration is preferably 0.06 g/L to 5 g/L based on the total volume of the aqueous composition. L, the total concentration is more preferably 0.3 g/L to 4 g/L, and the total concentration is even more preferably 0.8 g/L to 3 g/L. This composition is used to substantially deposit tin-silver-copper alloys.
在一些此等情況下,本發明之水性組合物為較佳的,其中以水性組合物之總體積計,組合物包含總濃度為0.06 g/L至0.6 g/L,較佳0.2 g/L至0.5 g/L,更佳0.3 g/L至0.4 g/L之銅(II)離子。在此類情況下,銅僅以極有限之程度併入至錫銀合金中。In some such cases, the aqueous composition of the present invention is preferred, wherein the total concentration of the composition is 0.06 g/L to 0.6 g/L, preferably 0.2 g/L based on the total volume of the aqueous composition To 0.5 g/L, more preferably 0.3 g/L to 0.4 g/L of copper (II) ion. In such cases, copper is only incorporated into the tin-silver alloy to a very limited extent.
在替代情況下,本發明之水性組合物為較佳的,其中以水性組合物之總體積計,組合物包含總濃度為0.7 g/L至5 g/L,較佳1 g/L至4.2 g/L,更佳1.3 g/L至3.6 g/L,甚至更佳2.1 g/L至3.1 g/L之銅(II)離子。在此類情況下,銅以較顯著之程度併入至錫銀合金中。In an alternative case, the aqueous composition of the present invention is preferred, wherein the composition contains a total concentration of 0.7 g/L to 5 g/L, preferably 1 g/L to 4.2 based on the total volume of the aqueous composition g/L, more preferably 1.3 g/L to 3.6 g/L, even more preferably 2.1 g/L to 3.1 g/L of copper (II) ion. In such cases, copper is incorporated into the tin-silver alloy to a significant degree.
然而,在大多數情況下,尤其希望本發明之水性組合物中不包括銅離子,使得所獲得之錫銀合金實質上不含銅,較佳不包含銅。因此,在此類情況下,本發明之水性組合物為較佳的,其中組合物實質上不含銅離子,較佳不包含銅離子,較佳地實質上不含銅離子及鉍離子,較佳不包含銅離子及鉍離子。However, in most cases, it is particularly desirable that the aqueous composition of the present invention does not include copper ions, so that the obtained tin-silver alloy is substantially free of copper, and preferably does not contain copper. Therefore, in such cases, the aqueous composition of the present invention is preferred, wherein the composition does not substantially contain copper ions, preferably does not contain copper ions, and preferably does not substantially contain copper ions and bismuth ions. It does not contain copper ions and bismuth ions.
較佳為本發明之水性組合物實質上不含鎳離子、鋅離子、鐵離子、鉛離子及鋁離子,較佳不包含鎳離子、鋅離子、鐵離子、鉛離子及鋁離子。Preferably, the aqueous composition of the present invention does not substantially contain nickel ion, zinc ion, iron ion, lead ion and aluminum ion, and preferably does not contain nickel ion, zinc ion, iron ion, lead ion and aluminum ion.
較佳地,該等錫離子及該等銀離子為水性組合物中僅有的可沉積金屬離子。此意謂此等金屬離子為僅有的沉積於錫銀合金中之金屬離子。較佳為本發明之水性組合物,其中在水性組合物中,以水性組合物中所有第3族至第15族金屬陽離子之總重量計,該等錫離子及該等銀離子之重量總共占水性組合物中所有第3族至第15族金屬陽離子之80重量%至100重量%,較佳至少90重量%,更佳至少95重量%,甚至更佳至少98重量%,最佳至少99重量%。第3族至第15族係指元素週期表中之18個族。Preferably, the tin ions and the silver ions are the only depositable metal ions in the aqueous composition. This means that these metal ions are the only metal ions deposited in the tin-silver alloy. It is preferably the aqueous composition of the present invention, wherein in the aqueous composition, based on the total weight of all metal cations from
除(a)錫離子及(b)銀離子以外,本發明之水性組合物包含(c)至少一種(較佳一種)第一化合物(如本文全文所述)及另外(d)至少一種(較佳一種)式(II)之第二化合物。In addition to (a) tin ions and (b) silver ions, the aqueous composition of the present invention comprises (c) at least one (preferably one) first compound (as described throughout this article) and in addition (d) at least one (more Preferably one) the second compound of formula (II).
至少一種第一化合物係獨立地選自由以下組成之群:未經取代之雙(胺基苯基)二硫化物、經取代之雙(胺基苯基)二硫化物、未經取代之二吡啶基二硫化物及經取代之二吡啶基二硫化物,較佳獨立地選自由以下組成之群:未經取代之雙(胺基苯基)二硫化物、經取代之雙(胺基苯基)二硫化物及未經取代之二吡啶基二硫化物,更佳獨立地選自由以下組成之群:未經取代之雙(胺基苯基)二硫化物及經取代之雙(胺基苯基)二硫化物,最佳獨立地選自由未經取代之雙(胺基苯基)二硫化物組成之群。在本發明之上下文中,未經取代表示不包括額外取代基(亦即官能基),其中經取代表示存在額外取代基(亦即官能基)。The at least one first compound is independently selected from the group consisting of: unsubstituted bis(aminophenyl) disulfide, substituted bis(aminophenyl) disulfide, unsubstituted dipyridine Disulfides and substituted dipyridyl disulfides are preferably independently selected from the group consisting of unsubstituted bis(aminophenyl) disulfides, substituted bis(aminophenyl) ) Disulfide and unsubstituted dipyridyl disulfide, more preferably independently selected from the group consisting of: unsubstituted bis(aminophenyl) disulfide and substituted bis(aminobenzene) The disulfides are preferably independently selected from the group consisting of unsubstituted bis(aminophenyl) disulfides. In the context of the present invention, unsubstituted means that no additional substituents (that is, functional groups) are included, and substituted means that there are additional substituents (that is, functional groups).
在未經取代之雙(胺基苯基)二硫化物中,各苯基部分較佳包含單個胺基。較佳地,未經取代之雙(胺基苯基)二硫化物係選自由以下組成之群:4,4'-二胺基二苯基二硫化物(亦稱為4,4'-二硫代二苯胺)及2,2'-二胺基二苯基二硫化物(亦稱為2,2'-二硫代二苯胺)。更佳為本發明之水性組合物,其中至少一種第一化合物為2,2'-二胺基二苯基二硫化物。最佳為本發明之水性組合物,其中2,2'-二胺基二苯基二硫化物為唯一之第一化合物。In the unsubstituted bis(aminophenyl) disulfide, each phenyl moiety preferably contains a single amino group. Preferably, the unsubstituted bis(aminophenyl) disulfide is selected from the group consisting of 4,4'-diaminodiphenyl disulfide (also known as 4,4'-disulfide) Thiodiphenylamine) and 2,2'-diaminodiphenyl disulfide (also known as 2,2'-dithiodiphenylamine). More preferably, it is the aqueous composition of the present invention, wherein at least one of the first compounds is 2,2'-diaminodiphenyl disulfide. The most preferred is the aqueous composition of the present invention, in which 2,2'-diaminodiphenyl disulfide is the only first compound.
未經取代之二吡啶基二硫化物較佳係選自由以下組成之群:4,4'-二吡啶基二硫化物及2,2'-二吡啶基二硫化物。The unsubstituted dipyridyl disulfide is preferably selected from the group consisting of 4,4'-dipyridyl disulfide and 2,2'-dipyridyl disulfide.
較佳為本發明之水性組合物,其中經取代之雙(胺基苯基)二硫化物及經取代之二吡啶基二硫化物具有至少一個取代基,其獨立地選自由以下組成之群:C1至C4烷基、C1至C4烷氧基、羥基、氫硫基、羧基、胺基、硝基及鹵離子。Preferably, it is the aqueous composition of the present invention, wherein the substituted bis(aminophenyl) disulfide and the substituted dipyridyl disulfide have at least one substituent, which is independently selected from the group consisting of: C1 to C4 alkyl, C1 to C4 alkoxy, hydroxyl, sulfhydryl, carboxyl, amine, nitro and halide.
在經取代之雙(胺基苯基)二硫化物之情況下,胺基取代基表示兩個苯基部分中之至少一者中之第二胺基。In the case of substituted bis(aminophenyl) disulfides, the amino substituent represents the second amino group in at least one of the two phenyl moieties.
尤其較佳為本發明之水性組合物,其中經取代之雙(胺基苯基)二硫化物具有至少一個取代基,其獨立地選自由以下組成之群:C1至C4烷基、C1至C4烷氧基、羥基、氫硫基、羧基、胺基、硝基及鹵離子,較佳選自由以下組成之群:C1至C3烷基、C1至C4烷氧基、羥基及氫硫基,更佳選自由以下組成之群:C1至C3烷基、C1至C3烷氧基及羥基。Particularly preferred is the aqueous composition of the present invention, wherein the substituted bis(aminophenyl) disulfide has at least one substituent, which is independently selected from the group consisting of: C1 to C4 alkyl, C1 to C4 Alkoxy, hydroxyl, sulfhydryl, carboxyl, amine, nitro and halide are preferably selected from the group consisting of C1 to C3 alkyl, C1 to C4 alkoxy, hydroxyl and sulfhydryl, more It is preferably selected from the group consisting of C1 to C3 alkyl, C1 to C3 alkoxy and hydroxyl.
尤其較佳為本發明之水性組合物,其中經取代之二吡啶基二硫化物具有至少一個取代基,其獨立地選自由以下組成之群:C1至C4烷基、C1至C4烷氧基、羥基、氫硫基、羧基、胺基、硝基及鹵離子,較佳選自由以下組成之群:C1至C3烷基、C1至C4烷氧基、羥基、氫硫基及胺基,更佳選自由以下組成之群:C1至C3烷基、C1至C3烷氧基、羥基及胺基。Especially preferred is the aqueous composition of the present invention, wherein the substituted dipyridyl disulfide has at least one substituent, which is independently selected from the group consisting of C1 to C4 alkyl, C1 to C4 alkoxy, Hydroxy, sulfhydryl, carboxyl, amine, nitro, and halide are preferably selected from the group consisting of C1 to C3 alkyl, C1 to C4 alkoxy, hydroxyl, sulfhydryl and amino, more preferably It is selected from the group consisting of C1 to C3 alkyl, C1 to C3 alkoxy, hydroxyl and amino.
甚至更佳為本發明之水性組合物,其中經取代之二吡啶基二硫化物具有至少一個取代基,其獨立地選自由以下組成之群:甲氧基、乙氧基、甲基、乙基、羥基及胺基。Even better is the aqueous composition of the present invention, wherein the substituted dipyridyl disulfide has at least one substituent, which is independently selected from the group consisting of methoxy, ethoxy, methyl, and ethyl , Hydroxyl and amino groups.
最佳地,經取代之二吡啶基二硫化物具有至少一個胺基取代基。Most preferably, the substituted dipyridyl disulfide has at least one amine substituent.
較佳為本發明之水性組合物,其中所有第一化合物之總濃度以水性組合物之總體積計在1 mmol/L至100 mmol/L,較佳為5 mmol/L至80 mmol/L,更佳為10 mmol/L至60 mmol/L,甚至更佳為15 mmol/L至50 mmol/L,最佳為20 mmol/L至40 mmol/L之範圍內。較佳地,如上文所定義之總濃度僅由一種第一化合物形成,最佳由2,2'-二胺基二苯基二硫化物(2,2'-二硫代二苯胺)形成。若總濃度顯著低於1 mmol/L或顯著高於100 mmol/L,則經常觀測到錫銀合金中之不當的變化。此外,在許多情況下,觀測到關於浴液穩定性之問題。Preferably it is the aqueous composition of the present invention, wherein the total concentration of all the first compounds is 1 mmol/L to 100 mmol/L, preferably 5 mmol/L to 80 mmol/L, based on the total volume of the aqueous composition, It is more preferably 10 mmol/L to 60 mmol/L, even more preferably 15 mmol/L to 50 mmol/L, and most preferably 20 mmol/L to 40 mmol/L. Preferably, the total concentration as defined above is formed by only one first compound, most preferably by 2,2'-diaminodiphenyl disulfide (2,2'-dithiodiphenylamine). If the total concentration is significantly lower than 1 mmol/L or significantly higher than 100 mmol/L, undue changes in tin-silver alloys are often observed. In addition, in many cases, problems with the stability of the bath are observed.
至少一種式(II)之第二化合物 (II)及其鹽, 殘基X中包含一或多個,較佳一個氫硫基(SH基)。At least one second compound of formula (II) (II) and its salts, the residue X contains one or more, preferably one sulfhydryl group (SH group).
在式(II)之化合物中,X表示包含該一或多個,較佳一個氫硫基之C1至C10烷基部分,較佳C1至C8烷基部分,更佳C1至C6部分,甚至更佳C1至C5烷基部分,最佳C1至C4烷基部分,其各自包含該一或多個,較佳一個氫硫基。舉例而言,若X為包含一個氫硫基之C1烷基部分,則X表示-CH2 -SH。In the compound of formula (II), X represents a C1 to C10 alkyl moiety containing the one or more, preferably a sulfhydryl group, preferably a C1 to C8 alkyl moiety, more preferably a C1 to C6 moiety, or even more Preferably the C1 to C5 alkyl moiety, most preferably the C1 to C4 alkyl moiety, each contains one or more, preferably one sulfhydryl group. For example, if X is a C1 alkyl moiety containing one sulfhydryl group, then X represents -CH 2 -SH.
在該C1至C10烷基部分中,具有三個或更多個碳原子之烷基部分為直鏈或分支鏈,較佳直鏈。直鏈烷基部分較佳經直鏈烷基部分中之末端碳原子與式(II)中之氮原子共價連接。因此,直鏈烷基部分較佳為正烷基部分。Among the C1 to C10 alkyl moieties, the alkyl moiety having three or more carbon atoms is linear or branched, preferably linear. The linear alkyl moiety is preferably covalently linked to the nitrogen atom in formula (II) via a terminal carbon atom in the linear alkyl moiety. Therefore, the linear alkyl moiety is preferably a normal alkyl moiety.
在式(II)之化合物中,R1 表示氫、甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基,較佳R1 表示氫、甲基、乙基、直鏈C3至C5烷基或分支鏈C3至C5烷基,更佳R1 表示氫、甲基、乙基或直鏈C3至C5烷基,最佳R1 表示甲基或乙基。在本發明之上下文中,分支鏈C3烷基表示其異構形式。In the compound of formula (II), R 1 represents hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted Substituted benzyl or substituted benzyl, preferably R 1 represents hydrogen, methyl, ethyl, linear C3 to C5 alkyl or branched C3 to C5 alkyl, more preferably R 1 represents hydrogen, Methyl, ethyl or straight-chain C3 to C5 alkyl, most preferably R 1 represents methyl or ethyl. In the context of the present invention, branched C3 alkyl means its isomeric form.
在式(II)之化合物中,R2 表示甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基,較佳R2 表示甲基、乙基、直鏈C3至C5烷基或分支鏈C3至C5烷基,更佳R2 表示甲基、乙基或直鏈C3至C5烷基,最佳R2 表示甲基或乙基。In the compound of formula (II), R 2 represents methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted Benzyl or substituted benzyl, preferably R 2 represents methyl, ethyl, linear C3 to C5 alkyl or branched C3 to C5 alkyl, more preferably R 2 represents methyl, ethyl or Straight chain C3 to C5 alkyl group, most preferably R 2 represents methyl or ethyl.
該經取代之苯基及經取代之苯甲基中之較佳取代基獨立地選自由以下組成之群:羥基、C1至C3烷基、C1至C3烷氧基、胺基、硝基及羧基。Preferred substituents in the substituted phenyl and substituted benzyl groups are independently selected from the group consisting of hydroxyl, C1 to C3 alkyl, C1 to C3 alkoxy, amine, nitro and carboxyl .
至少一種式(II)之第二化合物充當本發明之水性組合物中之錯合劑。較佳為本發明之水性組合物,其中式(II)之化合物為組合物中僅有的錯合劑。尤其較佳地,本發明之水性組合物實質上不含甘胺酸、半胱胺酸及麩胱甘肽,較佳不包含甘胺酸、半胱胺酸及麩胱甘肽,更佳實質上不含具有至少一個氫硫基之胺基酸及具有至少一個氫硫基之肽,較佳不包含具有至少一個氫硫基之胺基酸及具有至少一個氫硫基之肽,最佳實質上不含胺基酸及肽,較佳完全不包含胺基酸及肽。吾人之實驗指示胺基酸及肽對本發明之水性組合物之存放期具有負面影響,最終引起穩定性問題。在一些情況下,已觀測到存放期不超過六個月,其為不當的。相比之下,希望得到超過六個月之存放期,且式(II)之化合物不會對存放期產生負面影響,較佳得到超過六個月之存放期。At least one second compound of formula (II) acts as a complexing agent in the aqueous composition of the present invention. Preferably, it is the aqueous composition of the present invention, wherein the compound of formula (II) is the only complexing agent in the composition. Especially preferably, the aqueous composition of the present invention does not substantially contain glycine, cysteine and glutathione, preferably does not contain glycine, cysteine and glutathione, and more preferably The above does not contain amino acids with at least one sulfhydryl group and peptides with at least one sulfhydryl group, preferably without amino acids with at least one sulfhydryl group and peptides with at least one sulfhydryl group, the most substantial It does not contain amino acids and peptides, and preferably does not contain amino acids and peptides at all. Our experiments indicate that amino acids and peptides have a negative impact on the shelf life of the aqueous composition of the present invention, and ultimately cause stability problems. In some cases, it has been observed that the storage period does not exceed six months, which is inappropriate. In contrast, it is desirable to obtain a storage period of more than six months, and the compound of formula (II) will not have a negative impact on the storage period, preferably a storage period of more than six months.
在本發明之水性組合物中,式(II)之化合物出人意料地提供第二優勢。通常,在利用本發明之水性組合物期間,至少一種第一化合物之化合物發生還原,導致其單體化。此單體化基本上符合需要。通常,由於具有氫硫基之芳環,此產生極難聞的氣味。然而,在本發明之上下文中,已觀測到式(II)之化合物僅將至少一種第一化合物之化合物還原至很大程度上防止難聞氣味的程度。取而代之地,獲得漸進式及自調節之還原以使得單體第一化合物之總量保持極低但足夠高以確保水性組合物之操作能力。此有利於密切接觸對應組合物工作的人。In the aqueous composition of the present invention, the compound of formula (II) unexpectedly provides a second advantage. Generally, during the use of the aqueous composition of the present invention, at least one compound of the first compound is reduced, resulting in its monomerization. This singulation basically meets the needs. Generally, due to the aromatic ring with a hydrogen sulfide group, this produces an extremely unpleasant odor. However, in the context of the present invention, it has been observed that the compound of formula (II) only reduces the compound of at least one first compound to a degree that prevents unpleasant odors to a large extent. Instead, a gradual and self-adjusting reduction is obtained so that the total amount of monomeric first compounds remains extremely low but high enough to ensure the operational ability of the aqueous composition. This is beneficial to people who work in close contact with the corresponding composition.
因此,至少一種式(II)之第一化合物與至少一種式(II)之第二化合物之組合產生多種出人意料的優勢。Therefore, the combination of at least one first compound of formula (II) and at least one second compound of formula (II) produces a number of unexpected advantages.
較佳為本發明之水性組合物,其中至少一種式(II)之第二化合物為式(IIa)之化合物 (IIa)及其鹽, 其中獨立地 R1 表示氫、甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基,較佳R1 表示氫、甲基、乙基、直鏈C3至C5烷基或分支鏈C3至C5烷基,更佳R1 表示氫、甲基、乙基或直鏈C3至C5烷基,最佳R1 表示甲基或乙基, R2 表示甲基、乙基、直鏈C3至C5烷基、分支鏈C3至C5烷基、未經取代之苯基、經取代之苯基、未經取代之苯甲基或經取代之苯甲基,較佳R2 表示甲基、乙基、直鏈C3至C5烷基或分支鏈C3至C5烷基,更佳R2 表示甲基、乙基或直鏈C3至C5烷基,最佳R2 表示甲基或乙基,且 n表示1、2、3或4,較佳n表示1、2或3。Preferably it is the aqueous composition of the present invention, wherein at least one second compound of formula (II) is a compound of formula (IIa) (IIa) and salts thereof, wherein independently R 1 represents hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, Unsubstituted benzyl or substituted benzyl, preferably R 1 represents hydrogen, methyl, ethyl, linear C3 to C5 alkyl or branched C3 to C5 alkyl, more preferably R 1 represents hydrogen , Methyl, ethyl, or linear C3 to C5 alkyl, most preferably R 1 represents methyl or ethyl, R 2 represents methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl , Unsubstituted phenyl, substituted phenyl, unsubstituted benzyl or substituted benzyl, preferably R 2 represents methyl, ethyl, linear C3 to C5 alkyl or branched C3 to C5 alkyl, more preferably R 2 represents methyl, ethyl or linear C3 to C5 alkyl, most preferably R 2 represents methyl or ethyl, and n represents 1, 2, 3 or 4, preferably n Represents 1, 2 or 3.
在本發明之上下文中,直鏈C3至C5烷基及分支鏈C3至C5烷基較佳且明確地包括正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基、2-甲基丁烷-2-基、2,2-二甲基丙基、3-甲基丁基、戊烷-2-基、戊烷-3-基、3-甲基丁烷-2-基及2-甲基丁基。In the context of the present invention, linear C3 to C5 alkyl groups and branched C3 to C5 alkyl groups preferably and specifically include n-propyl, isopropyl, n-butyl, isobutyl, second butyl, and first Tributyl, n-pentyl, 2-methylbutan-2-yl, 2,2-dimethylpropyl, 3-methylbutyl, pentane-2-yl, pentane-3-yl, 3-methylbutan-2-yl and 2-methylbutyl.
最佳為本發明之組合物,其中至少一種式(II)之第二化合物為2-(二甲基胺基)乙硫醇。The most preferred is the composition of the present invention, wherein at least one second compound of formula (II) is 2-(dimethylamino)ethanethiol.
在本發明之水性組合物中,式(II)之化合物由於較佳高度酸性pH(關於pH,參見上文之細節)而較佳在氮原子處帶正電荷。In the aqueous composition of the present invention, the compound of formula (II) preferably has a positive charge at the nitrogen atom due to the preferred highly acidic pH (for pH, see the details above).
較佳為本發明之水性組合物,其中所有該等式(II)之第二化合物之總濃度以水性組合物之總體積計在5 mmol/L至100 mmol/L,較佳8 mmol/L至80 mmol/L,更佳10 mmol/L至60 mmol/L,甚至更佳15 mmol/L至50 mmol/L,最佳20 mmol/L至40 mmol/L之範圍內。較佳地,如上文所定義之總濃度僅由一種第二化合物形成,最佳僅由2-(二甲胺基)乙硫醇形成。若總濃度顯著低於5 mmol/L,則銀離子未充分錯合且通常觀測到不當的析出。Preferably it is the aqueous composition of the present invention, wherein the total concentration of all the second compounds of the formula (II) is 5 mmol/L to 100 mmol/L, preferably 8 mmol/L based on the total volume of the aqueous composition To 80 mmol/L, more preferably 10 mmol/L to 60 mmol/L, even more preferably 15 mmol/L to 50 mmol/L, most preferably 20 mmol/L to 40 mmol/L. Preferably, the total concentration as defined above is formed by only one second compound, and most preferably only by 2-(dimethylamino)ethanethiol. If the total concentration is significantly lower than 5 mmol/L, the silver ions are not sufficiently complexed and improper precipitation is usually observed.
較佳為本發明之水性組合物,其中所有第一化合物與所有第二化合物之莫耳比在10:1至1:10範圍內,較佳在7:1至1:7範圍內,更佳在5:1至1:5範圍內,甚至更佳在4:1至1:4範圍內,最佳在3:1至1:3範圍內,甚至最佳在2:1至1:2範圍內。若莫耳比顯著高於10:1或顯著低於1:10,則水性組合物之穩定性在一些情況下受負面影響。此外,在一些情況下,在錫銀合金中,銀之總量受負面影響,產生包含過高量或過少量銀之錫銀合金。It is preferably the aqueous composition of the present invention, wherein the molar ratio of all the first compounds to all the second compounds is in the range of 10:1 to 1:10, preferably in the range of 7:1 to 1:7, more preferably In the range of 5:1 to 1:5, even better in the range of 4:1 to 1:4, most preferably in the range of 3:1 to 1:3, even best in the range of 2:1 to 1:2 Inside. If the molar ratio is significantly higher than 10:1 or significantly lower than 1:10, the stability of the aqueous composition is negatively affected in some cases. In addition, in some cases, the total amount of silver in the tin-silver alloy is negatively affected, resulting in a tin-silver alloy containing too high or too little silver.
本發明之水性組合物較佳包含其他化合物。The aqueous composition of the present invention preferably contains other compounds.
較佳為本發明之水性組合物,其進一步包含 (e) 至少一種有機酸陰離子,較佳烷基磺酸陰離子,最佳甲磺酸陰離子。It is preferably the aqueous composition of the present invention, which further comprises (e) At least one organic acid anion, preferably alkylsulfonic acid anion, most methanesulfonic acid anion.
該至少一種有機酸陰離子較佳自錫離子源及/或銀離子源獲得。The at least one organic acid anion is preferably obtained from a tin ion source and/or a silver ion source.
亦較佳地,該至少一種有機酸陰離子係自有機酸、較佳至少一種烷基磺酸、最佳自甲磺酸獲得。Also preferably, the at least one organic acid anion is obtained from organic acids, preferably at least one alkyl sulfonic acid, and most preferably from methanesulfonic acid.
最佳地,該至少一種有機酸陰離子係自錫離子源、銀離子源及有機酸獲得。在此情況下,本發明之水性組合物較佳僅含有一種類型之有機酸陰離子,此為極佳的。因此,最佳為本發明之水性組合物,其中在該組合物中,烷基磺酸鹽,較佳甲磺酸鹽為唯一的有機酸陰離子。此提供多種優勢,因為在烷基磺酸之存在下金屬離子之溶解度通常較高。此外,錫(II)離子至錫(IV)離子之不當氧化顯著地減少。另外,已觀測到與強無機酸相比,烷基磺酸之腐蝕作用降低。Preferably, the at least one organic acid anion is obtained from a tin ion source, a silver ion source and an organic acid. In this case, the aqueous composition of the present invention preferably contains only one type of organic acid anion, which is excellent. Therefore, it is most preferable to be the aqueous composition of the present invention, wherein in the composition, alkylsulfonate, preferably methanesulfonate is the only organic acid anion. This provides several advantages because the solubility of metal ions is generally higher in the presence of alkyl sulfonic acid. In addition, the improper oxidation of tin (II) ions to tin (IV) ions is significantly reduced. In addition, it has been observed that the corrosive effect of alkyl sulfonic acids is reduced compared to strong mineral acids.
烷基磺酸為較佳酸,此係因為其充當最佳pH調節劑且通常產生極強酸性pH。若利用其他有機酸陰離子,較佳乙酸根、草酸根及檸檬酸根作為有機酸或用於錫離子源及/或銀離子源中,則通常需要額外強酸以獲得較佳強酸性pH,例如強無機酸,其包括額外無機陰離子。例如出於上文所陳述之原因,此為較佳的。因此,較佳為本發明之水性組合物,其中該組合物實質上不含無機酸,較佳不包含無機酸。取而代之地,在本發明之組合物中強有機酸為較佳的。Alkyl sulfonic acid is the preferred acid because it acts as an optimal pH adjuster and generally produces a very strong acidic pH. If other organic acid anions are used, preferably acetate, oxalate and citrate as organic acids or used in tin ion sources and/or silver ion sources, additional strong acids are usually required to obtain a better strong acid pH, such as strong inorganic Acid, which includes additional inorganic anions. This is preferable for the reasons stated above, for example. Therefore, it is preferably the aqueous composition of the present invention, wherein the composition contains substantially no inorganic acid, preferably no inorganic acid. Instead, strong organic acids are preferred in the composition of the present invention.
較佳為本發明之水性組合物,其中在水性組合物中,所有有機酸陰離子之總濃度以水性組合物之總體積計在0.5 mol/L至4.0 mol/L,較佳0.6 mol/L至2.5 mol/L,更佳0.7 mol/L至2 mol/L,甚至更佳0.8 mol/L至1.5 mol/L,最佳0.9 mol/L至1.3 mol/L之範圍內。較佳地,如上文所定義之總濃度僅由一種類型之有機酸陰離子形成,更佳僅由烷基磺酸鹽形成,最佳僅由甲磺酸鹽形成。若總濃度顯著超過4.0 mol/L,則組合物不再足夠穩定。此外,過高總濃度在基板上造成嚴重問題或甚至損壞。若總濃度顯著低於0.5 mol/L,則水性組合物之傳導率通常不夠。Preferably it is the aqueous composition of the present invention, wherein in the aqueous composition, the total concentration of all organic acid anions is 0.5 mol/L to 4.0 mol/L, preferably 0.6 mol/L to the total volume of the aqueous composition 2.5 mol/L, more preferably 0.7 mol/L to 2 mol/L, even more preferably 0.8 mol/L to 1.5 mol/L, and most preferably 0.9 mol/L to 1.3 mol/L. Preferably, the total concentration as defined above is formed by only one type of organic acid anion, more preferably only by alkyl sulfonate, and most preferably only by methanesulfonate. If the total concentration significantly exceeds 4.0 mol/L, the composition is no longer sufficiently stable. In addition, an excessively high total concentration causes serious problems or even damage on the substrate. If the total concentration is significantly lower than 0.5 mol/L, the conductivity of the aqueous composition is usually insufficient.
為提高可濕性,本發明之水性組合物較佳包含至少一種界面活性劑。界面活性劑之種類不受特別限制。因此,較佳為本發明之水性組合物,其進一步包含 (f) 至少一種界面活性劑,較佳選自由以下組成之群:非離子界面活性劑、兩性界面活性劑、陽離子界面活性劑及陰離子界面活性劑,較佳非離子界面活性劑及陽離子界面活性劑,更佳烷氧基化陽離子界面活性劑及聚醚非離子界面活性劑,甚至更佳環氧烷共聚物及烷氧基化胺,最佳環氧乙烷/環氧丙烷共聚物及乙氧基化胺。In order to improve the wettability, the aqueous composition of the present invention preferably contains at least one surfactant. The type of surfactant is not particularly limited. Therefore, it is preferably the aqueous composition of the present invention, which further comprises (f) At least one surfactant, preferably selected from the group consisting of nonionic surfactants, amphoteric surfactants, cationic surfactants and anionic surfactants, preferably nonionic surfactants and cationic surfactants Better alkoxylated cationic surfactants and polyether nonionic surfactants, even better alkylene oxide copolymers and alkoxylated amines, best ethylene oxide/propylene oxide copolymers and ethylene oxide Oxylated amines.
較佳為本發明之水性組合物,其中所有界面活性劑之總濃度以水性組合物之總體積計在0.1 g/L至20 g/L,較佳0.4 g/L至10 g/L,更佳0.6 g/L至8 g/L,最佳1 g/L至5 g/L之範圍內。若總濃度顯著低於0.1 g/L,則在許多情況下可濕性不足。若總濃度顯著超過20 g/L,則通常觀測到形成不當的泡沫。It is preferably the aqueous composition of the present invention, wherein the total concentration of all surfactants is 0.1 g/L to 20 g/L, preferably 0.4 g/L to 10 g/L, based on the total volume of the aqueous composition. Best 0.6 g/L to 8 g/L, best 1 g/L to 5 g/L. If the total concentration is significantly lower than 0.1 g/L, the wettability is insufficient in many cases. If the total concentration significantly exceeds 20 g/L, improper foam formation is usually observed.
為了避免或至少抑制起泡,本發明之水性組合物至少在許多情況下進一步較佳包含至少一種消泡劑。In order to avoid or at least suppress foaming, the aqueous composition of the present invention further preferably contains at least one defoamer, at least in many cases.
本發明之水性組合物較佳包含錫(II)離子。然而,錫(II)離子容易氧化,其產生錫(IV)離子。此氧化為不當的,因為其促進錫(IV)物種(諸如氧化錫(IV))之沉澱。為避免氧化,較佳利用抗氧化劑。因此,較佳為本發明之水性組合物,其進一步包含 (g) 至少一種抗氧化劑,其較佳選自由包含羥化環部分之化合物組成之群,最佳選自由以下組成之群:兒茶酚、氫醌、間苯二酚、酚磺酸、抗壞血酸及萘磺酸。The aqueous composition of the present invention preferably contains tin (II) ions. However, tin (II) ions are easily oxidized, which generates tin (IV) ions. This oxidation is inappropriate because it promotes the precipitation of tin (IV) species such as tin (IV) oxide. To avoid oxidation, it is better to use antioxidants. Therefore, it is preferably the aqueous composition of the present invention, which further comprises (g) At least one antioxidant, which is preferably selected from the group consisting of compounds containing hydroxylated ring moieties, most preferably selected from the group consisting of catechol, hydroquinone, resorcinol, phenolsulfonic acid, ascorbic acid And naphthalene sulfonic acid.
較佳羥化環部分為羥化芳族化合物,更佳苯二醇,甚至更佳選自由以下組成之群:兒茶酚、氫醌及間苯二酚,最佳選自由間苯二酚及氫醌組成之群。最佳為本發明之水性組合物,其中至少一種抗氧化劑為間苯二酚,更佳間苯二酚為本發明之水性組合物中僅有的抗氧化劑。如上文所定義之抗氧化劑足夠強以避免錫(II)離子氧化成錫(IV)離子而不將錫(II)離子還原成金屬錫。Preferably the hydroxylated ring part is a hydroxylated aromatic compound, more preferably benzenediol, even more preferably selected from the group consisting of catechol, hydroquinone and resorcinol, most preferably selected from resorcinol and The group consisting of hydroquinone. The most preferred is the aqueous composition of the present invention, in which at least one antioxidant is resorcinol, and more preferably, resorcinol is the only antioxidant in the aqueous composition of the present invention. The antioxidant as defined above is strong enough to avoid oxidation of tin (II) ions to tin (IV) ions without reducing tin (II) ions to metallic tin.
本發明之水性組合物較佳用於電解沉積錫銀合金且較佳不用於無電沉積。The aqueous composition of the present invention is preferably used for electrolytic deposition of tin-silver alloys and is preferably not used for electroless deposition.
較佳為本發明之水性組合物,其中所有抗氧化劑之總濃度以水性組合物之總體積計在1.0 mmol/L至100 mmol/L,較佳2.0 mmol/L至70 mmol/L,更佳4.0 mmol/L至40 mmol/L,甚至更佳5.0 mmol/L至20 mmol/L,最佳6.0 mmol/L至15 mmol/L之範圍內。較佳地,如上文所定義之總濃度僅由一種類型之抗氧化劑形成,更佳僅由苯二醇形成,最佳僅由間苯二酚形成。若如上文所定義之總濃度顯著超過100 mmol/L,則在許多情況下觀測到電鍍效能不充足。若總濃度顯著低於1.0 mmol/L,則不能充分防止錫(II)離子氧化成不可溶錫(IV)物種且在一些情況下可觀測到不當的沉澱。Preferably it is the aqueous composition of the present invention, wherein the total concentration of all antioxidants is 1.0 mmol/L to 100 mmol/L, preferably 2.0 mmol/L to 70 mmol/L, more preferably based on the total volume of the aqueous composition 4.0 mmol/L to 40 mmol/L, even better 5.0 mmol/L to 20 mmol/L, most preferably 6.0 mmol/L to 15 mmol/L. Preferably, the total concentration as defined above is formed by only one type of antioxidant, more preferably formed only by benzenediol, and most preferably formed only by resorcinol. If the total concentration as defined above significantly exceeds 100 mmol/L, insufficient plating efficiency is observed in many cases. If the total concentration is significantly lower than 1.0 mmol/L, oxidation of tin (II) ions into insoluble tin (IV) species cannot be sufficiently prevented and improper precipitation may be observed in some cases.
若已知至少一種抗氧化劑為典型抗氧化劑,則較佳將此化合物之量在上述所有抗氧化劑之總濃度中計數。特定言之,若至少一種抗氧化劑為有機酸且包含羥化環部分,則將該化合物之量在上述所有抗氧化劑之總濃度當中計數。If it is known that at least one antioxidant is a typical antioxidant, it is preferable to count the amount of this compound in the total concentration of all the antioxidants mentioned above. In particular, if at least one antioxidant is an organic acid and contains a hydroxylated ring moiety, the amount of the compound is counted among the total concentrations of all the antioxidants mentioned above.
如上文所提及,本發明亦關於一種用於將錫銀合金電解沉積於基板上之方法,該方法包含以下步驟: (A) 提供該基板, (B) 提供根據本發明之水性組合物,較佳如上文描述為較佳的, (C) 使該基板與該水性組合物接觸且供應電流,使得該錫銀合金電解沉積於該基板上。As mentioned above, the present invention also relates to a method for electrolytically depositing a tin-silver alloy on a substrate. The method includes the following steps: (A) Provide the substrate, (B) Provide an aqueous composition according to the present invention, preferably as described above, (C) contacting the substrate with the aqueous composition and supplying electric current, so that the tin-silver alloy is electrolytically deposited on the substrate.
關於本發明之水性組合物所提及之上文同樣適用於本發明之方法。The above mentioned about the aqueous composition of the present invention also applies to the method of the present invention.
在本發明之方法的步驟(A)中,提供基板,較佳為導電基板。在一些情況下,較佳為本發明之方法,其中基板為半導體基底基板,上面較佳包含導電層或半導電層。此導電或半導電層亦常稱為晶種層。晶種層之種類不受特別限制。最佳晶種層為銅晶種層。In step (A) of the method of the present invention, a substrate is provided, preferably a conductive substrate. In some cases, it is preferable to use the method of the present invention, wherein the substrate is a semiconductor base substrate, and preferably includes a conductive layer or a semiconductive layer on it. This conductive or semi-conductive layer is also often referred to as a seed layer. The type of seed layer is not particularly limited. The best seed layer is a copper seed layer.
基板較佳為或包含至少一種類金屬及/或鎵,更佳為或包含至少一種選自由以下組成之群的元素:矽、鍺及鎵,最佳為或包含矽。若基板自身導電性不足,則其較佳包含上文所提及之導電層或半導電層。The substrate is preferably or includes at least one metalloid and/or gallium, more preferably or includes at least one element selected from the group consisting of silicon, germanium and gallium, and most preferably or includes silicon. If the substrate itself has insufficient conductivity, it preferably includes the conductive layer or semi-conductive layer mentioned above.
最佳為本發明之方法,其中基板為晶圓,較佳上面包含導電層或半導電層之晶圓,最佳包含銅晶種層。The method of the present invention is most preferred, wherein the substrate is a wafer, preferably a wafer containing a conductive layer or a semi-conductive layer thereon, and most preferably a copper seed layer.
在其他情況下,較佳為本發明之方法,其中基板為不導電基板,較佳為玻璃或塑膠之基板或包含玻璃或塑膠之基板。在此情況下,基板較佳已至少部分地包含導電晶種層,或在後續處理步驟中沉積之導電晶種層。In other cases, the method of the present invention is preferred, wherein the substrate is a non-conductive substrate, preferably a glass or plastic substrate or a substrate containing glass or plastic. In this case, the substrate preferably already at least partially contains a conductive seed layer, or a conductive seed layer deposited in a subsequent processing step.
較佳為本發明之方法,其中基板(如先前所定義)包含複數個個別結構部件。較佳為本發明之方法,其中基板包含複數個金屬特徵,較佳複數個金屬柱及/或具有至少一個金屬層之區域,更佳複數個銅柱及/或具有至少一個銅層之區域。Preferably, the method of the present invention, wherein the substrate (as previously defined) includes a plurality of individual structural components. Preferably the method of the present invention, wherein the substrate includes a plurality of metal features, preferably a plurality of metal pillars and/or a region with at least one metal layer, more preferably a plurality of copper pillars and/or a region with at least one copper layer.
較佳地,金屬特徵之縱橫比在1:40至15:1 (高度:寬度)之範圍內,較佳地在1:30至10:1之範圍內,更佳地在1:20至7:1之範圍內。金屬柱及銅柱的較佳縱橫比分別在1:1至10:1之範圍內,更佳在1:1至7:1之範圍內。金屬凸塊及銅凸塊的較佳縱橫比分別在1:40至1:1範圍內,較佳在1:30至1:10範圍內。在本發明之上下文中,個別結構特徵及金屬特徵分別包括個別幾何形式,諸如支柱、點及區域,其藉助於本發明方法使得錫銀合金沉積可達到。Preferably, the aspect ratio of the metal feature is in the range of 1:40 to 15:1 (height:width), preferably in the range of 1:30 to 10:1, more preferably in the range of 1:20 to 7. :1 within the range. The preferred aspect ratios of the metal pillars and the copper pillars are in the range of 1:1 to 10:1, and more preferably in the range of 1:1 to 7:1. The preferred aspect ratios of the metal bumps and the copper bumps are in the range of 1:40 to 1:1, and preferably in the range of 1:30 to 1:10. In the context of the present invention, individual structural features and metal features include individual geometrical forms, such as pillars, points, and regions, respectively, which can be achieved by the method of the present invention for the deposition of tin-silver alloys.
較佳為本發明之方法,其中該等金屬柱及銅柱分別具有圓柱形形狀。較佳地,該等金屬柱及銅柱分別具有在3 µm至100 µm範圍內,較佳5 µm至90 µm範圍內,更佳9 µm至80 µm範圍內,甚至更佳15 µm至70 µm範圍內,最佳20 µm至70 µm範圍內之高度。較佳地,該等金屬柱及銅柱分別具有在5 µm至100 µm範圍內,較佳10 µm至80 µm範圍內,更佳10 µm至30 µm範圍內之寬度。Preferably, it is the method of the present invention, wherein the metal pillars and the copper pillars each have a cylindrical shape. Preferably, the metal pillars and copper pillars respectively have a range of 3 µm to 100 µm, preferably a range of 5 µm to 90 µm, more preferably a range of 9 µm to 80 µm, even more preferably 15 µm to 70 µm The best height is within the range of 20 µm to 70 µm. Preferably, the metal pillars and copper pillars have a width in the range of 5 µm to 100 µm, preferably in the range of 10 µm to 80 µm, and more preferably in the range of 10 µm to 30 µm.
在本發明之方法中,該等金屬凸塊及銅凸塊分別可具有任何形狀;較佳為圓柱形、多邊形及/或矩形形狀。In the method of the present invention, the metal bumps and the copper bumps can have any shape; preferably, they are cylindrical, polygonal, and/or rectangular.
較佳地,金屬凸塊及銅凸塊分別具有在0.5 µm至50 µm,較佳1 µm至30 µm,更佳2 µm至25µm,甚至更佳3 µm至20 µm,最佳4 µm至15 µm範圍內之高度。較佳地,凸塊具有至少50 µm,較佳至少80 µm,更佳至少100 µm之寬度。Preferably, the metal bumps and the copper bumps have a thickness of 0.5 µm to 50 µm, preferably 1 µm to 30 µm, more preferably 2 µm to 25 µm, even more preferably 3 µm to 20 µm, most preferably 4 µm to 15 µm. Height within µm. Preferably, the bump has a width of at least 50 µm, preferably at least 80 µm, and more preferably at least 100 µm.
在步驟(B)中提供較佳如本文全文中描述為較佳的本發明之水性組合物,通常於用於電解金屬沉積之槽中。In step (B), the aqueous composition of the present invention, which is preferably as described in the entire text, is provided, usually in a tank for electrolytic metal deposition.
在本發明之方法的步驟(C)中,將錫銀合金電解沉積於基板上。步驟(C)需要基板充分導電以便電解沉積錫銀合金。步驟(A)中所提供之基板已經充分導電,或在後續步驟中處理步驟(A)中所提供之基板以使得其在步驟(C)之前充分導電。因此,步驟(C)中之基板較佳包含至少一個導電層或半導電層以使得錫銀合金在上面電解沉積。較佳地,至少一個導電層或半導電層為導電金屬層、導電半金屬層或導電非金屬層。最佳地,其為導電金屬層,較佳為金屬銅層,通常為銅晶種層。In step (C) of the method of the present invention, a tin-silver alloy is electrolytically deposited on the substrate. Step (C) requires that the substrate is sufficiently conductive to electrolytically deposit a tin-silver alloy. The substrate provided in step (A) is already sufficiently conductive, or the substrate provided in step (A) is processed in a subsequent step to make it sufficiently conductive before step (C). Therefore, the substrate in step (C) preferably includes at least one conductive layer or semi-conductive layer so that a tin-silver alloy is electrolytically deposited thereon. Preferably, at least one conductive layer or semi-conductive layer is a conductive metal layer, a conductive semi-metal layer or a conductive non-metal layer. Most preferably, it is a conductive metal layer, preferably a metal copper layer, usually a copper seed layer.
本發明之方法為較佳的,其中在步驟(C)中錫銀合金沉積為支柱上之焊蓋及/或焊料凸塊。The method of the present invention is preferred, wherein in step (C), the tin-silver alloy is deposited as solder caps and/or solder bumps on the pillars.
在本發明之方法中,將基板作為陰極操作以便在步驟(C)中沉積錫銀合金。In the method of the present invention, the substrate is operated as a cathode to deposit a tin-silver alloy in step (C).
較佳為本發明之方法,其中電流為直流電,較佳具有在1 A/dm2 至100 A/dm2 範圍內之陰極電流密度,更佳具有在3 A/dm2 至70 A/dm2 範圍內之陰極電流密度,最佳具有在5 A/dm2 至50 A/dm2 範圍內之陰極電流密度。在一些情況下,較佳步驟(C)中之直流電不藉由電流脈衝補充。此意謂較佳地在步驟(C)中,直流電為唯一電流。It is preferably the method of the present invention, wherein the current is direct current, preferably having a cathode current density in the range of 1 A/dm 2 to 100 A/dm 2 , more preferably having a cathode current density in the range of 3 A/dm 2 to 70 A/dm 2 The cathode current density within the range is preferably within the range of 5 A/dm 2 to 50 A/dm 2 . In some cases, the direct current in the preferred step (C) is not supplemented by current pulses. This means that preferably in step (C), direct current is the only current.
吾人之實驗展示,尤其在相當高的電流密度下,本發明之方法產生極佳結果。此意謂在此類電流密度下沉積極佳及極均勻之錫銀合金,且另外樹枝狀結晶之數目十分低。與包含具有至少一個氫硫基之胺基酸(例如半胱胺酸)的組合物相比的情況尤其如此(參見以下實例)。因此,尤其較佳為本發明之方法,其中電流包含具有在10 A/dm2 至40 A/dm2 範圍內、更佳在12 A/dm2 至35 A/dm2 範圍內的陰極電流密度之直流電。Our experiments show that the method of the present invention produces excellent results, especially at relatively high current densities. This means that an excellent and uniform tin-silver alloy is deposited under such current density, and in addition, the number of dendrites is very low. This is especially true when compared to compositions containing amino acids with at least one sulfhydryl group, such as cysteine (see the examples below). Therefore, the method of the present invention is particularly preferred, wherein the current includes a cathode current density in the range of 10 A/dm 2 to 40 A/dm 2 , more preferably in the range of 12 A/dm 2 to 35 A/dm 2 The direct current.
本發明之方法為較佳的,其中在步驟(C)中,接觸及施加電流持續3秒至400分鐘,較佳5秒至200分鐘,最佳6秒至100分鐘。若接觸進行顯著少於3秒,則通常沉積不完全之錫銀合金且焊帽之均勻性不足。The method of the present invention is preferred, wherein in step (C), the contact and current application lasts for 3 seconds to 400 minutes, preferably 5 seconds to 200 minutes, most preferably 6 seconds to 100 minutes. If the contact is significantly less than 3 seconds, usually an incomplete tin-silver alloy is deposited and the uniformity of the welding cap is insufficient.
在本發明之方法的步驟(C)中,較佳沉積錫銀合金層,層厚度較佳在1 µm至150 µm範圍內,更佳在4 µm至100 µm範圍內,甚至更佳在7 µm至90 µm範圍內,最佳在10 µm至80 µm範圍內。In step (C) of the method of the present invention, it is preferable to deposit a tin-silver alloy layer, the thickness of the layer is preferably in the range of 1 µm to 150 µm, more preferably in the range of 4 µm to 100 µm, even more preferably in the range of 7 µm Within the range of 90 µm, preferably within the range of 10 µm to 80 µm.
較佳為本發明之方法,其中經電解沉積之錫銀合金中之銀含量以經電解沉積之錫銀合金之總重量計在0.1重量%至10重量%範圍內,較佳在0.5重量%至5重量%範圍內,最佳在1.5重量%至3.5重量%範圍內。最佳地,錫銀合金之其餘部分為錫。因此,錫銀合金中之主要金屬為錫。因此,本發明之方法為較佳的,其中經電解沉積之錫銀合金中之錫含量以經電解沉積之錫銀合金之總重量計為至少60重量%,較佳至少70重量%,更佳至少80重量%,甚至更佳至少90重量%或至少95重量%,最佳至少96.5重量%,且甚至最佳至少98.5重量%或至少99.5重量%。非常希望得到如上文所描述之錫銀合金且由於其極佳的可焊接性,非常適合用於支柱上之焊蓋及作為焊料凸塊。Preferably, it is the method of the present invention, wherein the silver content in the electrolytically deposited tin-silver alloy is in the range of 0.1% to 10% by weight, preferably 0.5% to 10% by weight, based on the total weight of the electrolytically deposited tin-silver alloy In the range of 5% by weight, preferably in the range of 1.5% to 3.5% by weight. Optimally, the remainder of the tin-silver alloy is tin. Therefore, the main metal in the tin-silver alloy is tin. Therefore, the method of the present invention is preferable, wherein the tin content in the electrolytically deposited tin-silver alloy is at least 60% by weight, preferably at least 70% by weight, more preferably based on the total weight of the electrolytically deposited tin-silver alloy At least 80% by weight, even more preferably at least 90% by weight or at least 95% by weight, most preferably at least 96.5% by weight, and even best at least 98.5% by weight or at least 99.5% by weight. It is highly desirable to obtain the tin-silver alloy as described above and because of its excellent solderability, it is very suitable for use as a solder cap on a pillar and as a solder bump.
僅在一些情況下本發明之方法為較佳的,其中錫銀合金包含銅。The method of the present invention is preferred only in some cases where the tin-silver alloy contains copper.
在大多數情況下,極佳藉由本發明方法獲得之錫銀合金並非三元合金,更佳不為錫銀銅合金。較佳地,錫銀合金實質上不含,較佳不包含由以下組成之群中之一種、多於一種或所有元素:鋅、鎳、鐵、銅、鉍、鋁及鉛。特定言之,用本發明方法獲得之錫銀合金實質上不含鉛,較佳不包含鉛。In most cases, the tin-silver alloy obtained by the method of the present invention is not a ternary alloy, and more preferably is not a tin-silver-copper alloy. Preferably, the tin-silver alloy does not substantially contain, preferably does not contain one, more than one or all elements in the group consisting of zinc, nickel, iron, copper, bismuth, aluminum and lead. In particular, the tin-silver alloy obtained by the method of the present invention is substantially free of lead, and preferably does not contain lead.
較佳為本發明之方法,其中在步驟(C)中,水性組合物具有在5℃至90℃範圍內,較佳在15℃至60℃範圍內,更佳在20℃至50℃範圍內,最佳在22℃至40℃範圍內之溫度。若溫度顯著低於5℃,則未獲得足夠沉積速度。若溫度顯著高於90℃,則發生不當的蒸發且浴液不穩定。It is preferably the method of the present invention, wherein in step (C), the aqueous composition has a temperature in the range of 5°C to 90°C, preferably in the range of 15°C to 60°C, more preferably in the range of 20°C to 50°C , The best temperature in the range of 22℃ to 40℃. If the temperature is significantly lower than 5°C, a sufficient deposition rate is not obtained. If the temperature is significantly higher than 90°C, improper evaporation occurs and the bath is unstable.
本發明亦關於一種本發明之水性組合物之用途,其用於將錫銀合金焊料凸塊或錫銀合金焊蓋電解沉積於金屬柱上,較佳用於將錫銀合金焊蓋電解沉積於銅柱上。關於本發明之水性組合物及本發明之方法之前述內容分別同樣適用於前述用途。 藉由以下非限制性實例更詳細地描述本發明。The present invention also relates to the use of the aqueous composition of the present invention, which is used to electrolytically deposit tin-silver alloy solder bumps or tin-silver alloy solder caps on metal posts, preferably for electrolytic deposition of tin-silver alloy solder caps On the copper pillar. The foregoing contents regarding the aqueous composition of the present invention and the method of the present invention are equally applicable to the foregoing uses, respectively. The present invention is described in more detail by the following non-limiting examples.
實例
1. 用於沉積錫銀合金之水性組合物:
在第一步驟中,如下製備不同水性組合物:
1.1 水性組合物E-1 (根據本發明):
根據本發明之水性組合物E-1包含以下作為界面活性劑:45 g/L錫(II)離子、1 g/L銀(I)離子、大約1 mol/L甲磺酸、大約10 mmol/L間苯二酚、20 mmol/L至40 mmol/L 2,2'-二硫代二苯胺、20 mmol/L至40 mmol/L 2-(二甲胺基)乙硫醇及環氧乙烷/環氧丙烷共聚物及乙氧基化胺。pH大約為0。 Example 1. Aqueous composition for depositing tin-silver alloy: In the first step, different aqueous compositions were prepared as follows: 1.1 Aqueous composition E-1 (according to the invention): Aqueous composition E-1 according to the invention Contains the following as surfactants: 45 g/L tin (II) ion, 1 g/L silver (I) ion, about 1 mol/L methanesulfonic acid, about 10 mmol/L resorcinol, 20 mmol/L To 40 mmol/
1.2 比較水性組合物C-1 (並非根據本發明):
出於比較目的,比較水性組合物C-1包含40 g/L錫(II)離子、1 g/L銀(I)離子、大約1 mol/L甲磺酸、大約5 mmol/L氫醌、10 mmol/L至20 mmol/L 2,2'-二硫代二苯胺、大約20 mmol/L半胱胺酸及界面活性劑。pH大約為0。比較水性組合物C-1代表先前技術JP 2006-265573 A。1.2 Comparison of aqueous composition C-1 (not according to the invention):
For comparison purposes, the comparative aqueous composition C-1 contains 40 g/L tin (II) ion, 1 g/L silver (I) ion, about 1 mol/L methanesulfonic acid, about 5 mmol/L hydroquinone, 10 mmol/L to 20 mmol/
2. 用於將錫銀合金電解沉積於基板上之方法(沉積實驗): 在第二步驟中,進行沉積且在各沉積實驗中沉積錫銀合金。2. Method for electrolytic deposition of tin-silver alloy on the substrate (deposition experiment): In the second step, deposition was performed and a tin-silver alloy was deposited in each deposition experiment.
提供矽基晶圓試片作為基板,其藉助於大約500 nm銅晶種層呈現導電性,各自包含具有複數個圓柱形銅柱(高度:10 µm)之九個晶粒。在相應光阻內形成銅柱。在不移除光阻之情況下,將錫銀合金沉積於銅柱之頂部上以形成相應焊蓋。由此獲得具有錫銀焊蓋之銅柱。A silicon-based wafer test piece is provided as a substrate, which exhibits conductivity with the aid of a copper seed layer of approximately 500 nm, each containing nine crystal grains with a plurality of cylindrical copper pillars (height: 10 µm). A copper pillar is formed in the corresponding photoresist. Without removing the photoresist, a tin-silver alloy is deposited on the top of the copper pillar to form a corresponding solder cap. Thus, a copper pillar with a tin-silver solder cap was obtained.
為此,提供在第一步驟中製備之1000 ml相應水性組合物。To this end, 1000 ml of the corresponding aqueous composition prepared in the first step is provided.
隨後,根據所供應之電流密度將相應基板浸沒至相應組合物中維持不同接觸時間,使得在各情況下沉積大約15 µm錫銀焊蓋(視所施加之電流密度而定,浸沒60秒至120秒)。各組合物之溫度為25℃且將攪拌設定為300 rpm。在各沉積實驗之後,測定樹枝狀結晶之數目及平均面積以及焊蓋之均勻性。各沉積實驗之參數及相應結果概述於表1中。
表1,沉積實驗之參數及結果
表1展示在利用水性組合物E-1之沉積實驗中,樹枝狀結晶之數目不顯著,甚至在諸如30 A/dm2 之相當高的電流密度下仍不顯著。對於樹枝狀結晶之平均面積亦觀測到此情況,樹枝狀結晶之平均面積在比較水性組合物C-1中顯著較高。Table 1 shows that in the deposition experiment using the aqueous composition E-1, the number of dendrites was not significant, even at a relatively high current density such as 30 A/dm 2 . This was also observed for the average area of dendrites, and the average area of dendrites was significantly higher in the comparative aqueous composition C-1.
藉由光學顯微鏡(Olympus LEXT OLS4000)使用軟體「Olympus Stream Enterprise Desktop 2.2」來測定樹枝狀結晶之數目及樹枝狀結晶平均面積。An optical microscope (Olympus LEXT OLS4000) was used to measure the number of dendrites and the average area of dendrites using the software "Olympus Stream Enterprise Desktop 2.2".
本發明之水性組合物之益處進一步展現於圖1及圖2中,其中圖1展示利用水性組合物E-1之結果及圖2展示比較水性組合物C-1之結果,兩者均在30 A/dm2 下。在圖1中幾乎不存在樹枝狀結晶,其中在圖2中可看到顯著更多的樹枝狀結晶。The benefits of the aqueous composition of the present invention are further shown in Figures 1 and 2, where Figure 1 shows the result of using the aqueous composition E-1 and Figure 2 shows the result of the comparative aqueous composition C-1, both of which are at 30 Under A/dm 2 . In Figure 1 there are almost no dendrites, of which significantly more dendrites can be seen in Figure 2.
此外,與用比較水性組合物C-1獲得之相應封蓋銅柱相比,用水性組合物E-1獲得之具有焊蓋之銅柱呈現較高的均勻性,在30 A/dm2 之電流密度下尤其如此。此可參見參數WIP及WID,其為在此技術領域中所熟知的。In addition, compared with the corresponding capped copper pillars obtained with the comparative water-based composition C-1, the copper pillars with welded caps obtained with the aqueous composition E-1 showed higher uniformity, at a level of 30 A/dm 2 This is especially true at current density. This can be seen in the parameters WIP and WID, which are well known in this technical field.
在銅凸塊而非銅柱之情況下已觀測到相同改良(資料未展示)。The same improvement has been observed in the case of copper bumps instead of copper pillars (data not shown).
3. 藉由滴定實驗測定錯合特性: 為了評估各種化合物對於銀離子之錯合特性,進行若干次滴定。結果概述於圖3中。3. Determining the complex characteristics by titration experiment: In order to evaluate the complex properties of various compounds for silver ions, several titrations were performed. The results are summarized in Figure 3.
該等滴定如下進行: 在第一步驟中,製備包含用於銀離子之相應化合物之儲備水溶液(錯合化合物濃度:50 g/L)。These titrations are performed as follows: In the first step, a stock aqueous solution (concentration of complex compound: 50 g/L) containing the corresponding compound for silver ions is prepared.
在第二步驟中,將來自儲備溶液之部分逐步添加至包含甲磺酸銀(濃度對應於1 g/L Ag (I)離子)及銀旋轉圓盤電極(RDE) (1000 rpm)之滴定溶液中。參照參考電極在添加來自儲備溶液之部分後測定過電勢之變化。滴定溶液之溫度為25℃。In the second step, the portion from the stock solution is gradually added to the titration solution containing silver methanesulfonate (concentration corresponding to 1 g/L Ag (I) ion) and silver rotating disk electrode (RDE) (1000 rpm) in. The reference electrode was used to measure the overpotential change after adding a portion from the stock solution. The temperature of the titrated solution is 25°C.
圖3展示在測試化合物中錯合特性顯著不同。Figure 3 shows that the complex properties are significantly different in the test compounds.
單獨的化合物A (2,2'-二硫代二苯胺)不提供任何顯著錯合特性。過電勢在化合物A之0 g/L至6 g/L範圍內保持幾乎為零。 單獨的化合物B (2-(二甲胺基)乙硫醇)展示針對銀離子之顯著錯合特性。根據圖3,在大約3 g/L化合物B下獲得大約-250 mV之最大過電勢。Compound A alone (2,2'-dithiodiphenylamine) does not provide any significant complex properties. The overpotential remains almost zero in the range of 0 g/L to 6 g/L of compound A. Compound B alone (2-(dimethylamino)ethanethiol) exhibited significant complex properties for silver ions. According to Figure 3, a maximum overpotential of approximately -250 mV is obtained at approximately 3 g/L of compound B.
類似於化合物B,單獨的化合物D (麩胱甘肽)展示顯著錯合特性及類似的約-250 mV之最大過電勢。然而,相比於化合物B,化合物D形成相應錯合物之能力較弱。此可在較高濃度的化合物D中發現,其為獲得過電勢所必需的,特別是在-50 mV至-200 mV範圍內。此意謂化合物D在較低濃度下不如化合物B有效。此外,麩胱甘肽作為一種有機化合物在一些情況下具有以下缺點:其在相應水性組合物中隨時間推移不夠穩定(存放期)。Similar to compound B, compound D (glutathione) alone exhibited significant mismatch characteristics and a similar maximum overpotential of about -250 mV. However, compared to compound B, compound D has a weaker ability to form corresponding complexes. This can be found in higher concentrations of compound D, which is necessary to obtain an overpotential, especially in the range of -50 mV to -200 mV. This means that Compound D is not as effective as Compound B at lower concentrations. In addition, glutathione as an organic compound has the following disadvantages in some cases: it is not stable enough over time in the corresponding aqueous composition (storage period).
單獨的化合物C (L-半胱胺酸)亦展示針對銀離子之顯著錯合特性,且為已知組合物中之典型錯合化合物(比較JP 2006-265573 A)。圖3展示化合物C為一種能力非常強的錯合化合物。在小於2 g/L之相當低濃度下已獲得大約-250 mV之最大值。一般而言,若錯合物形成在已經極低之濃度下發生,則對應水性組合物中之工作濃度通常亦較低。在此種情況下,保持如此低的工作濃度具有挑戰性且需要極敏感的分析工具,此通常為不希望得到的。Compound C (L-cysteine) alone also exhibits significant complexing properties for silver ions, and is a typical complex compound in known compositions (compare JP 2006-265573 A). Figure 3 shows that compound C is a very powerful complex compound. The maximum value of approximately -250 mV has been obtained at a relatively low concentration of less than 2 g/L. Generally speaking, if complex formation occurs at an already extremely low concentration, the working concentration in the corresponding aqueous composition is usually also low. In this case, maintaining such a low working concentration is challenging and requires extremely sensitive analytical tools, which is usually undesirable.
化合物E亦展示約-250 mV之最大過電勢,且因此在此方面與化合物B、化合物C及化合物D相比極其類似。相比之下,化合物E極快速地形成強錯合物。此可在1 g/L下已幾乎獲得最大過電勢之事實中發現。儘管化合物D在形成錯合物方面能力極強,但工作濃度通常過低且在相應水性組合物中維持該工作濃度要求很高。Compound E also exhibits a maximum overpotential of about -250 mV, and therefore is very similar to compound B, compound C, and compound D in this respect. In contrast, compound E forms strong complexes very quickly. This can be found in the fact that the maximum overpotential is almost obtained at 1 g/L. Although compound D is extremely capable of forming complexes, the working concentration is usually too low and it is very demanding to maintain this working concentration in the corresponding aqueous composition.
A與B以及A與C之組合為獲得極強錯合物僅有的手段。在各情況下,獲得大約-400 mV之最大過電勢。需要此強錯合物形成以避免不當的銀析出。通常若銀離子不充分地錯合,使得不可溶的銀物種在水性組合物中沉澱或銀甚至在不存在電流之情況下過快地沉積於相應基板上,則出現析出。然而,僅A與B組合額外展示獲得範圍在-250 mV至-400 mV內之過電勢的所需工作濃度範圍。此外,A與C組合具有以下缺點:相應焊蓋更容易形成樹枝狀結晶(比較上述事項2)。分別在A與B組合及A與C組合之儲備溶液中,分別相較於50 g/L之化合物B及C,化合物A以大約等莫耳量存在。化合物A於儲備溶液中之總濃度分別與化合物A對於A與B組合及A與C組合之濃度相同。The combination of A and B and A and C is the only way to obtain extremely strong complexes. In each case, a maximum overpotential of approximately -400 mV is obtained. This strong complex formation is required to avoid undue silver precipitation. Generally, if the silver ions are not sufficiently complexed to cause the precipitation of insoluble silver species in the aqueous composition or the silver is deposited on the corresponding substrate too quickly even in the absence of current, precipitation will occur. However, only the combination of A and B additionally shows the required working concentration range to obtain an overpotential in the range of -250 mV to -400 mV. In addition, the combination of A and C has the following disadvantages: the corresponding solder caps are more likely to form dendrites (compare
A‧‧‧強調形成於圓柱形銅柱頂部上之樹枝狀結晶的字母A‧‧‧A letter emphasizing the dendritic crystal formed on the top of the cylindrical copper pillar
圖1為根據本發明獲得之包含複數個銅柱之晶粒之區段的俯視圖,該複數個銅柱具有錫銀焊蓋(顯示為黑點)。關於其他細節,參見下文之實例。以淺灰色顯示包含晶粒之矽基晶圓試片。Fig. 1 is a top view of a section of crystal grains containing a plurality of copper pillars obtained according to the present invention, the plurality of copper pillars having tin-silver solder caps (shown as black dots). For other details, see the examples below. The silicon-based wafer test piece containing the die is displayed in light gray.
圖2為根據先前技術(JP 2006-265573 A,參見下文實例)獲得之包含複數個銅柱之晶粒之區段的俯視圖,該複數個銅柱具有錫銀焊蓋(顯示為黑點) 。再次,以淺灰色顯示包含晶粒之矽基晶圓試片。在右上角中,藉由字母「A」強調形成於圓柱形銅柱頂部上之樹枝狀結晶。 圖3為顯示銀離子之各種化合物之錯合特性的圖表。在x軸上,給出以g/L為單位之相應化合物之濃度,其中在y軸上,給出取決於化合物濃度之過電勢。在圖中,字母具有以下含義:A:2,2'-二硫代二苯胺、B:2-(二甲胺基)乙硫醇、C:L-半胱胺酸、D:麩胱甘肽以及E:半胱胺。2 is a top view of a section of crystal grains containing a plurality of copper pillars obtained according to the prior art (JP 2006-265573 A, see the examples below), the plurality of copper pillars having tin-silver solder caps (shown as black dots). Again, the silicon-based wafer test piece containing the die is displayed in light gray. In the upper right corner, the letter "A" emphasizes the dendrites formed on the top of the cylindrical copper pillar. Figure 3 is a graph showing the complex properties of various compounds of silver ions. On the x-axis, the concentration of the corresponding compound in g/L is given, and on the y-axis, the overpotential depending on the compound concentration is given. In the figure, the letters have the following meanings: A: 2,2'-dithiodiphenylamine, B: 2-(dimethylamino)ethanethiol, C: L-cysteine, D: glutathione Peptides and E: Cysteamine.
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| JP3301707B2 (en) | 1997-01-20 | 2002-07-15 | ディップソール株式会社 | Tin-silver alloy acid electroplating bath |
| DE10158227A1 (en) | 2001-11-15 | 2003-06-05 | Siemens Ag | Electrolysis bath for the electrodeposition of silver-tin alloys |
| JP4756887B2 (en) | 2005-03-22 | 2011-08-24 | 石原薬品株式会社 | Non-cyan tin-silver alloy electroplating bath |
| EP2221396A1 (en) * | 2008-12-31 | 2010-08-25 | Rohm and Haas Electronic Materials LLC | Lead-Free Tin Alloy Electroplating Compositions and Methods |
| JP6088295B2 (en) | 2013-03-07 | 2017-03-01 | ローム・アンド・ハース電子材料株式会社 | Tin alloy plating solution |
-
2018
- 2018-06-08 PT PT181767880T patent/PT3578693T/en unknown
- 2018-06-08 EP EP18176788.0A patent/EP3578693B1/en active Active
-
2019
- 2019-06-05 WO PCT/EP2019/064621 patent/WO2019234088A1/en not_active Ceased
- 2019-06-05 TW TW108119427A patent/TWI715991B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW589411B (en) * | 1999-09-27 | 2004-06-01 | Ishihara Chemical Co Ltd | Alloy plating bath containing tin and copper, plating method for depositing alloy containing and copper, and article having a plated coating of alloy containing tin and copper formed thereon |
| CN1662679A (en) * | 2002-07-25 | 2005-08-31 | 新菱电子株式会社 | Electroplating solution containing tin-silver-copper, electroplating film and electroplating method |
| TW201739969A (en) * | 2015-12-28 | 2017-11-16 | 三菱綜合材料股份有限公司 | SnAg alloy plating solution |
| TW201816194A (en) * | 2016-06-13 | 2018-05-01 | 石原化學股份有限公司 | Tin and tin alloy plating bath, electronic components for forming electrodeposits using the plating bath |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202000999A (en) | 2020-01-01 |
| EP3578693B1 (en) | 2020-04-15 |
| EP3578693A1 (en) | 2019-12-11 |
| PT3578693T (en) | 2020-06-16 |
| WO2019234088A1 (en) | 2019-12-12 |
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