TWI713991B - Die bonding device and manufacturing method of semiconductor device - Google Patents
Die bonding device and manufacturing method of semiconductor device Download PDFInfo
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Abstract
本發明的課題是在於提供一種可洗滌基板的背面的黏晶裝置。 其解決手段,黏晶裝置是具備: 搬送部,其係將具有複數列載置晶粒的區域的基板搬送於第一方向; 第一異物除去裝置,其係除去前述基板的第一面的異物; 第二異物除去裝置,其係除去與前述基板的前述第一面相反側的第二面的異物;及 接合頭,其係將拾取後的晶粒接合於前述基板。 前述第一異物除去裝置是在離開前述基板的位置具備板,在前述基板與前述板之間流動氣體,除去前述基板的前述第一面的異物。The subject of the present invention is to provide a die bonding device capable of washing the back surface of a substrate. The solution is that the die bonding device has: A conveying part, which conveys the substrate with a plurality of rows of areas where the crystal grains are placed in the first direction; The first foreign matter removing device, which removes foreign matter on the first surface of the aforementioned substrate; A second foreign matter removing device that removes foreign matter on the second surface of the substrate opposite to the first surface; and Bonding head, which bonds the picked up die to the aforementioned substrate. The first foreign matter removing device includes a plate at a position away from the substrate, and a gas flows between the substrate and the plate to remove foreign matter on the first surface of the substrate.
Description
本案是有關黏晶裝置,可適用在例如具備洗滌基板的裝置的黏晶裝置。This case relates to a die-bonding device, which can be applied to, for example, a die-bonding device equipped with a device for cleaning substrates.
在半導體裝置的製造工程的一部分有將半導體晶片(以下簡稱為晶粒)搭載於配線基板或引線架等(以下簡稱為基板)而組合封裝的工程,在組合封裝(package)的工程的一部分有從半導體晶圓(以下簡稱為晶圓)分割晶粒的工程(切割工程)及將分割後的晶粒搭載於基板上的接合(Bonding)工程。被使用在接合工程的半導體製造裝置為黏晶機(die bonder)等的黏晶裝置。As part of the manufacturing process of semiconductor devices, there is a process in which a semiconductor chip (hereinafter referred to as a die) is mounted on a wiring board or a lead frame (hereinafter referred to as a substrate) to be assembled and packaged, and part of the process in a package package is A process of dividing a die from a semiconductor wafer (hereinafter referred to as a wafer) (dicing process) and a bonding process of mounting the divided die on a substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonder or other die bonder.
在晶粒往基板的接合雖使用黏著劑,但將晶粒黏著於基板時,一旦垃圾附著於基板的表面,則黏著劑的黏著力會降低,因此除去基板上的垃圾(以下稱為異物)是在安裝晶粒上極為重要。在專利文獻1中,提案將具有空氣的吹出孔與吸入孔為形成一體的洗滌噴嘴的異物除去裝置移動於與基板的移動方向正交的方向來除去基板上的異物。
[先前技術文獻]
[專利文獻]Although an adhesive is used for the bonding of the die to the substrate, when the die is adhered to the substrate, once the garbage adheres to the surface of the substrate, the adhesive force of the adhesive will be reduced, so the garbage on the substrate (hereinafter referred to as foreign matter) is removed. It is extremely important to install the die. In
[專利文獻1]日本特開2012-199458號公報[Patent Document 1] JP 2012-199458 A
(發明所欲解決的課題)(The problem to be solved by the invention)
然而,在專利文獻1中,雖可除去基板的表面的異物,但背面的異物是無法除去。
本案的課題是在於提供可洗滌基板的背面的黏晶裝置。
其他的課題及新穎的特徵是可由本說明書的記述及附圖明確得知。
(用以解決課題的手段)However, in
若簡單說明本案之中具代表性者的概要,則如下述般。 亦即,黏晶裝置是具備: 搬送部,其係將具有複數列載置晶粒的區域的基板搬送於第一方向; 第一異物除去裝置,其係除去前述基板的第一面的異物; 第二異物除去裝置,其係除去與前述基板的前述第一面相反側的第二面的異物;及 接合頭,其係將拾取後的晶粒接合於前述基板。 前述第一異物除去裝置是在離開前述基板的位置具備板,在前述基板與前述板之間流動氣體,除去前述基板的前述第一面的異物。 [發明的效果]If you briefly explain the outline of the representative person in this case, it is as follows. That is, the die bonding device has: A conveying part, which conveys the substrate with a plurality of rows of areas where the crystal grains are placed in the first direction; The first foreign matter removing device, which removes foreign matter on the first surface of the aforementioned substrate; A second foreign matter removing device that removes foreign matter on the second surface of the substrate opposite to the first surface; and Bonding head, which bonds the picked up die to the aforementioned substrate. The first foreign matter removing device includes a plate at a position away from the substrate, and a gas flows between the substrate and the plate to remove foreign matter on the first surface of the substrate. [Effects of the invention]
若根據上述黏晶裝置,則可洗滌基板的背面。According to the above die bonding device, the back surface of the substrate can be cleaned.
以下,利用圖面來說明有關實施形態、變形例、比較例及實施例。但,在以下的說明中,有在同一構成要素附上同一符號省略重複的說明的情形。另外,圖面為了使說明更明確,相較於實際的形態,有關各部的寬度、厚度、形狀等,有模式性地表示的情形,但終究只是一例,不是限定本發明的解釋者。Hereinafter, the embodiments, modified examples, comparative examples, and examples will be explained using the drawings. However, in the following description, the same reference numerals may be attached to the same constituent elements to omit overlapping descriptions. In addition, in order to make the description clearer, the drawings show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual form, but it is only an example after all, and does not limit the interpreter of the present invention.
利用圖1、2來說明有關本案發明者們針對基板的表面及背面的兩面的洗滌進行檢討的技術(比較例)。圖1是說明比較例的基板的表面的洗滌方法的圖面,圖1(A)是表示基板從吸附平台分離的狀態的剖面圖,圖1(B)是表示基板與吸附平台接觸的狀態的剖面圖。圖2是說明基板的彎曲的圖,圖2(A)是表示洗滌上彎曲的基板的表面時的剖面圖,圖2(B)是表示洗滌下彎曲的基板的背面時的剖面圖。With reference to FIGS. 1 and 2, the technique (comparative example) that the inventors of the present application examined for the cleaning of both the front and back surfaces of the substrate will be explained. Fig. 1 is a diagram illustrating a method of cleaning the surface of a substrate of a comparative example, Fig. 1(A) is a cross-sectional view showing a state where the substrate is separated from an adsorption platform, and Fig. 1(B) is a view showing a state where the substrate is in contact with the adsorption platform Sectional view. FIG. 2 is a diagram illustrating the curvature of the substrate, FIG. 2(A) is a cross-sectional view when the surface of the upper curved substrate is washed, and FIG. 2(B) is a cross-sectional view when the back surface of the lower curved substrate is washed.
比較例的異物除去裝置9是具備洗滌噴嘴91。在洗滌噴嘴91是具備空氣供給配管91a及空氣排出配管91b。空氣排出配管91b是如圖1(B)所示般,配管徑會比空氣供給配管91a大。這是因為空氣排出配管91b作為異物搬送用使用。最接近基板S的面的是如圖1(B)所示般為噴嘴面91c。The foreign
此噴嘴面91c是平面視為矩形狀,在中央部設有複數個圓形的空氣吹出口91d,以環狀地包圍此空氣吹出口91d的周圍之方式設有複數個空氣吸入口91e。This
藉此,藉由從空氣吹出口91d吐出的空氣來吹跑的異物是如以圖1(B)的箭號所示般藉由空氣吸入口91e來立即被吸引,最終被廢棄。Thereby, the foreign matter blown away by the air discharged from the
洗滌噴嘴91是上下作動,通常洗滌噴嘴91會下降至基板S的適正位置(例如基板S上2mm的位置),在基板S的移動或更換時是上昇。又,洗滌噴嘴91是如圖1(B)所示般,如箭號C般,移動於基板S的寬度方向(Y方向)而進行異物的除去動作。The
如圖1(A)所示般,藉由夾緊裝置(clamp)(基板搬送爪)51來將兩端藉由搬送引導裝置(滑運道、搬送道)52所支撐的基板S搬送於X方向至吸附平台AS上。使吸附平台AS上昇而使與基板S接觸,從吸附孔AH吸引,藉此將基板S固定於吸附平台AS。As shown in Fig. 1(A), the substrate S supported by the conveying guides (slide path, conveyance path) 52 at both ends by the clamp (substrate conveying claw) 51 is conveyed to X Direction to the adsorption platform AS. The suction platform AS is raised to be in contact with the substrate S and sucked from the suction holes AH, thereby fixing the substrate S to the suction platform AS.
使洗滌噴嘴91下降,相對於基板S的搬送方向(X方向),使動作於垂直的方向(Y方向),洗滌基板S的表面。The
由於洗滌噴嘴91的前端會接近基板S的表面側,因此基板平坦化為必要。但,如圖2(A)所示般,基板S有上彎曲或下彎曲的情形,因此藉由真空吸附來將基板S固定於吸附平台AS。Since the tip of the
若洗滌基板S的背面時,也在基板S的背面側設置洗滌噴嘴91,則由於噴嘴前端會接近,因此基板平坦化為必要。如圖2(B)所示般,基板S會有下彎曲或上彎曲的情形,因此檢討藉由真空吸附來將基板S固定於吸附平台AS,但基板S的表面側是有晶粒或晶粒設置場所,恐有將晶粒破損之虞,及恐有使異物附著於晶粒設置場所之虞,因此難以直接使基板S的表面接觸吸附於吸附平台AS而使基板平坦化。When cleaning the back surface of the substrate S, if the
並且,在基板S有彎曲時,難以以適當的位置關係將兩面同時以適當的和洗滌噴嘴91的位置關係來安定進行洗滌。In addition, when the substrate S is curved, it is difficult to clean both surfaces in an appropriate positional relationship at the same time with an appropriate positional relationship with the
於是,在實施形態中,在離開基板的位置具備板,在基板與板之間流動氣體,進行基板的背面的洗滌。以下,說明有關幾個的實施形態。Therefore, in the embodiment, a plate is provided at a position away from the substrate, and gas flows between the substrate and the plate to clean the back surface of the substrate. Hereinafter, some embodiments will be described.
<第一實施形態> 利用圖3、4來說明有關第一實施形態的基板的洗滌。圖3是說明第一實施形態的基板背面用的異物除去裝置的圖,圖3(A)是平面圖,圖3(B)是圖3(A)的B1-B2線的剖面圖,圖3(C)是圖3(A)的C1-C2線的剖面圖。圖4是說明第一實施形態的基板表面用的異物除去裝置及背面用的異物除去裝置的圖,圖4(A)是平面圖,圖4(B)是圖4(A)的B1-B2線的剖面圖,圖4(C)是圖4(A)的C1-C2線的剖面圖。<The first embodiment> The cleaning of the substrate according to the first embodiment will be described with reference to FIGS. 3 and 4. Fig. 3 is a diagram illustrating the foreign matter removing device for the back surface of the substrate of the first embodiment, Fig. 3(A) is a plan view, Fig. 3(B) is a cross-sectional view taken along line B1-B2 of Fig. 3(A), and Fig. 3( C) is a cross-sectional view taken along the line C1-C2 of FIG. 3(A). 4 is a diagram illustrating the foreign matter removing device for the substrate surface and the foreign matter removing device for the back surface of the first embodiment. FIG. 4(A) is a plan view, and FIG. 4(B) is a line B1-B2 of FIG. 4(A) Fig. 4(C) is a cross-sectional view taken along the line C1-C2 in Fig. 4(A).
基板背面用的異物除去裝置(第一異物除去裝置)100是具備可接觸於基板S的背面(第一面)側的板101。板101是在其上面側具備沿著基板寬度方向(Y方向)延伸的溝102。板101是具備:在溝102的一端從下方供給氣體的供給管103,及在溝102的另一端排出氣體的排出口104。供給管103是在溝102內彎曲成排出氣體於Y方向。以圖3的箭號所示般,異物除去裝置100是藉由從板101的一端的供給管103往另一端的排出口104供給流動縮小流路的高速的氣體(藉由白努利效應(Bernoulli effect))來使產生對基板S的吸引力,且藉由該氣體的流動來進行基板S的背面側的洗滌。由於基板S的背面的接觸位置是溝的細的境界部分,因此可儘可能減少接觸面積。The foreign matter removing device (first foreign matter removing device) 100 for the back surface of the substrate is provided with a
並且,在基板與溝的境界的部分接觸的部分是以和溝的境界的部分所配置的間隔不同的間距來搬送基板,藉此可洗滌。In addition, the part where the substrate is in contact with the part of the border of the groove is transported at a pitch different from the part of the border of the groove, so that the substrate can be washed.
與基板S的背面的洗滌並行,如圖4所示般,利用異物除去裝置9的洗滌噴嘴91來與圖1同樣地進行基板S的表面(第二面)的洗滌。在此,異物除去裝置100擔任圖1的吸附平台AS的任務。In parallel with the cleaning of the back surface of the substrate S, as shown in FIG. 4, the
如圖4所示般,基板S是在其表面具備被配置成格子狀的封裝區域P,封裝區域P是包含接合晶粒的區域(晶粒設置場所)。在此,在基板寬度方向(Y方向)排列成一列的封裝區域會對應於一個的基板洗滌區域。在圖4中,基板S是具有八個的基板洗滌區域,在一個的基板洗滌區域含有四個的封裝區域P。基板S是按每一個的基板洗滌區域搬送於X方向。As shown in FIG. 4, the substrate S is provided with a package area P arranged in a lattice shape on the surface thereof, and the package area P is a region (die installation location) containing bonded die. Here, the packaging areas arranged in a row in the substrate width direction (Y direction) correspond to one substrate washing area. In FIG. 4, the substrate S has eight substrate washing regions, and one substrate washing region includes four packaging regions P. The substrate S is transported in the X direction for each substrate cleaning area.
板101的X方向的長度(Lp)是比基板S的X方向的長度(Ls)更短,在圖4是三列的基板洗滌區域(三列的封裝區域)的長度。The length (Lp) of the
溝102的寬度(X方向的長度(Wt))是以和封裝區域P的寬度(Wp)不同的寬度(間距)所構成。在圖4是Wt>Wp。藉此,基板S的溝102的境界所位置的部分是在將基板S搬送至其次的基板洗滌區域時,可進行洗滌。設為比基板洗滌區域(基板搬送間距)長的板(背面吸引洗滌區域)的情況,設置可按每個溝進行氣體的供給的ON、OFF的機能。藉此,可停止對溝上未有基板S位置的溝供給氣體。The width of the groove 102 (the length (Wt) in the X direction) is constituted by a width (pitch) different from the width (Wp) of the package region P. In Fig. 4, Wt>Wp. Thereby, the part at the boundary of the
其次,利用圖5來說明有關基板S的表面及背面的洗滌動作。圖5是說明第一實施形態的異物除去裝置的洗滌動作的流程圖。Next, the cleaning operation on the front and back surfaces of the substrate S will be described using FIG. 5. Fig. 5 is a flowchart illustrating the washing operation of the foreign matter removing apparatus of the first embodiment.
首先,將兩端藉由搬送引導裝置52所支撐的基板S搬送於X方向至板101上(步驟S31)。First, the substrate S supported by the conveying
其次,使板101上昇而使與基板S接觸,供給氣體至板101的溝102,吸附基板S的同時進行基板S的背面的洗滌(步驟S32)。Next, the
其次,以區域感測器或非接觸變位感測器等來確認基板S被吸附,彎曲消失的情形(步驟S33),在基板S無彎曲時,與圖1的比較例同樣,例如使洗滌噴嘴91下降至基板S上2mm的位置,使動作於對基板S的搬送方向(X方向)垂直的方向(Y方向),洗滌基板S的表面(步驟S34)。Next, use an area sensor or a non-contact displacement sensor to confirm that the substrate S is adsorbed and the warping disappears (step S33). When the substrate S is not warped, it is the same as the comparative example in FIG. The
其次,判斷基板S的表面的洗滌是否終了(步驟S35),當洗滌終了時,停止往溝102的氣流,解除吸引,使板101下降,使洗滌噴嘴91上昇,將基板S搬送至其次的基板洗滌區域(步驟S36)。重複步驟S32~S36,洗滌至最後的基板洗滌區域(在圖4是第八個的基板洗滌區域)。Next, it is judged whether the cleaning of the surface of the substrate S is completed (step S35). When the cleaning is completed, the air flow to the
最後的基板洗滌區域的基板S的表面的洗滌終了時,停止往溝102的氣流,解除吸引,使板101下降,使洗滌噴嘴91上昇,將基板S搬送至接合平台(步驟S37)。When the cleaning of the surface of the substrate S in the last substrate cleaning area is completed, the air flow to the
在第一實施形態中,可藉由在基板的背面側流動氣體來一邊吸引基板而矯正基板的彎曲,一邊以基板的背面側的氣流來進行基板的背面的洗滌。In the first embodiment, the back surface of the substrate can be cleaned by the air flow on the back surface of the substrate while sucking the substrate to correct the curvature of the substrate by flowing a gas on the back surface of the substrate.
<第一實施形態的變形例> 以下,有關第一實施形態的代表性的變形例,舉幾個例示。在以下的變形例的說明中,對於具有與在上述的第一實施形態說明者同樣的構成及機能的部分,可使用與上述的第一實施形態同樣的符號。而且,有關如此的部分的說明是在技術上不矛盾的範圍內可適當援用上述的第一實施形態的說明。又,上述的實施形態的一部分及複數的變形例的全部或一部分是在技術上不矛盾的範圍內可適當地複合性地適用。<Modifications of the first embodiment> Hereinafter, a few examples will be given for representative modifications of the first embodiment. In the description of the following modification examples, the same reference numerals as those of the first embodiment described above may be used for parts having the same configuration and functions as those described in the first embodiment described above. In addition, the description of such a part is that the description of the above-mentioned first embodiment can be appropriately used within the range of technically not contradictory. In addition, part of the above-mentioned embodiment and all or part of the plural modified examples can be suitably applied in a complex manner within a range that is not technically contradictory.
(第一變形例) 利用圖5來說明有關第一變形例的異物除去裝置。圖6是說明第一變形例的基板背面用的異物除去裝置的圖,圖5(A)是平面圖,圖5(B)是圖6(A)的B1-B2線的剖面圖,圖6(C)是圖6(A)的C1-C2線的剖面圖。(First modification) The foreign matter removing device according to the first modified example will be described with reference to FIG. 5. Fig. 6 is a diagram illustrating a foreign matter removing device for the back surface of a substrate of a first modification. Fig. 5(A) is a plan view, Fig. 5(B) is a cross-sectional view taken along the line B1-B2 of Fig. 6(A), and Fig. 6( C) is a cross-sectional view taken along the line C1-C2 of Fig. 6(A).
第一變形例的異物除去裝置100A是具備可接觸於基板S的背面的板101A。板101A的X方向的長度是與板101相同。板101A是在其上面側具備沿著基板寬度方向(Y方向)延伸的溝102A。溝102A是從一端往另一端慢慢地擴大寬度的構造,溝102A是左右交替地配置。板101是具備:在溝102A的一端從下方供給氣體的供給管103A,及在溝102A的另一端從下方排出氣體的排出口104A。如以圖5的箭號所示般,溝102A是藉由從寬度窄的側供給氣體往寬的側流動,使根據白努利的效應之吸引力產生,且以該氣流來進行基板S的背面的洗滌。背面的吸附力雖依該氣體所流動的場所的寬度、面積、深度等而產生不平衡,但藉由左右交替地配置從氣體供給側往排氣側的方向,可解消不平衡,可保持基板的左右的吸引力的平衡。The foreign
利用本變形例的洗滌裝置,與第一實施形態同樣地洗滌基板S的表面及背面。With the cleaning device of this modification, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment.
(第二變形例) 利用圖7來說明有關第二變形例的異物除去裝置。圖7是說明第二變形例的基板背面用的異物除去裝置的圖,圖7(A)是平面圖,圖7(B)是圖7(A)的B1-B2線的剖面圖,圖7(C)是圖7(A)的C1-C2線的剖面圖。(Second Modification) The foreign matter removing device according to the second modified example will be described with reference to FIG. 7. Fig. 7 is a diagram illustrating a foreign matter removing apparatus for the back surface of a substrate of a second modification. Fig. 7(A) is a plan view, Fig. 7(B) is a cross-sectional view taken along the line B1-B2 of Fig. 7(A), and Fig. 7( C) is a cross-sectional view taken along the line C1-C2 of Fig. 7(A).
第二變形例的異物除去裝置100B是在第一變形例的異物除去裝置100A的溝102A的供給管103A附近設置平面視三角形狀的突起105,藉由寬德效應(Coandă effect)來提高吸引效率者。The foreign
利用本變形例的異物除去裝置,與第一實施形態同樣洗滌基板S的表面及背面。With the foreign matter removing apparatus of this modification, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment.
(第三變形例) 利用圖8來說明有關第三變形例的異物除去裝置。圖8是說明第三變形例的基板背面用的異物除去裝置的圖,圖8(A)是平面圖,圖8(B)是圖8(A)的B1-B2線的剖面圖,圖8(C)是圖8(A)的C1-C2線的剖面圖。(Third modification) The foreign matter removing device according to the third modification will be explained with reference to FIG. 8. FIG. 8 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a third modification, FIG. 8(A) is a plan view, FIG. 8(B) is a cross-sectional view taken along the line B1-B2 of FIG. 8(A), and FIG. 8( C) is a cross-sectional view taken along the line C1-C2 of FIG. 8(A).
第三變形例的異物除去裝置100C是在第一變形例的異物除去裝置100A的板101A之與基板S的接觸面側設置複數個0.1~0.2mm的高度的銷(突起部)106,而使能在基板的吸引時保持基板的平坦度。在本例中,銷106是在基板寬度方向的兩端部各設五個,在中央部設七個,在兩端部與中央部之間各設三個。在包含本變形例的實施形態的白努利吸附中,即使在基板與吸引部之間有間隙,吸引力也會起作用,因此可藉由近接間隔的點接觸來只以銷一邊吸附一邊保持基板S的平坦度,將與基板S的背面的接觸部保持於最小限度(減低接觸面積),將來自接觸部的異物附著形成最小限度(減低異物附著的潛能(potential))。The foreign
利用本變形例的異物除去裝置,與第一實施形態同樣洗滌基板S的表面及背面。With the foreign matter removing apparatus of this modification, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment.
(第四變形例) 利用圖9來說明有關第四變形例的基板的洗滌。圖9是說明第四變形例的基板背面用的異物除去裝置的圖,圖9(A)是平面圖,圖9(B)是圖9(A)的B1-B2線的剖面圖,圖9(C)是圖9(A)的C1-C2線的剖面圖。(Fourth modification) The cleaning of the substrate related to the fourth modification example will be described with reference to FIG. 9. Fig. 9 is a diagram illustrating a foreign matter removing device for the back surface of a substrate of a fourth modification. Fig. 9(A) is a plan view, Fig. 9(B) is a cross-sectional view taken along the line B1-B2 of Fig. 9(A), and Fig. 9( C) is a cross-sectional view taken along the line C1-C2 of FIG. 9(A).
第四變形例的異物除去裝置100D是具備可接觸於基板S的背面的板101D。板101D是在其上面側具備沿著基板寬度方向(Y方向)延伸的溝102D。在此,板101D的X方向及Y方向的長度是與板101A的X方向及Y方向的長度相同。溝102D是寬度(X方向的長度)為一定,從一端往另一端慢慢地加深深度的構造,溝102D是左右交替地配置。板101D是具備:在溝102D的一端從下方供給氣體的供給管103D,及在溝102D的另一端從下方排出氣體的排出口104D。如以圖8的箭號所示般,溝102D是從深度淺的側供給氣體,往深的側流動,藉此使吸引力產生的同時進行基板S的背面的洗滌。溝102D是藉由左右交替地配置,可保持基板的左右的吸引力的平衡。The foreign
藉此,溝寬度會被均一化,容易按照晶粒的設置寬度來自由設定洗滌區域寬度。並且,吸引力的強度是可無關溝寬度(洗滌區域)以溝的深度及氣流的強度來調整。Thereby, the width of the groove is uniformized, and it is easy to freely set the width of the washing area according to the setting width of the die. In addition, the strength of the suction force can be adjusted by the depth of the groove and the strength of the air flow regardless of the groove width (washing area).
利用本變形例的異物除去裝置,與第一實施形態同樣洗滌基板S的表面及背面。With the foreign matter removing apparatus of this modification, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment.
(第五變形例) 利用圖10來說明有關第五變形例的基板的洗滌。圖10是說明第五變形例的基板背面用的異物除去裝置的圖,圖10(A)是平面圖,圖10(B)是圖10(A)的B1-B2線的剖面圖,圖10(C)是圖10(A)的C1-C2線的剖面圖,圖10(D)是白努利吸盤的剖面圖。(Fifth Modification) The cleaning of the substrate related to the fifth modification example will be described with reference to FIG. 10. Fig. 10 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a fifth modification, Fig. 10(A) is a plan view, Fig. 10(B) is a cross-sectional view taken along line B1-B2 of Fig. 10(A), and Fig. 10( C) is a cross-sectional view taken along the line C1-C2 of FIG. 10(A), and FIG. 10(D) is a cross-sectional view of the Bernoulli sucker.
第五變形例的異物除去裝置100E是在基板S的背面側具備板101E。在此,板101E的X方向及Y方向的長度是與板101A的X方向及Y方向的長度相同。板101E是具備:交錯配置於其上面側,平面視圓形狀的白努利吸盤107,及交錯配置於白努利吸盤107之間,比白努利吸盤107的上面高0.1~0.2mm的銷(突起部)106E,及供給氣體至白努利吸盤107的供給口103E,以及將從白努利吸盤107噴出的氣體排出的排出口104E。基板S是以和銷106E接觸,不和白努利吸盤107接觸的方式設定銷106E的高度。亦即,基板S是藉由銷106E來保持。白努利吸盤107是從中央部的下方使氣體噴出,藉由流動於白努利吸盤107的上面與基板S的間隙的高速氣流所造成的白努利效應的負壓來使吸引力產生的同時進行基板S的背面側的洗滌。藉由銷(突起部)106E,在基板S的吸引時,可保持基板S的平坦度。The foreign
使用本變形例的異物除去裝置,與第一實施形態同樣地洗滌基板S的表面及背面。此情況,藉由白努利吸盤107的外周的氣流的流動的部分來進行洗滌,但一次的吸附是在白努利吸盤107的中央附近或白努利吸盤107間的氣流碰撞的部分發生氣流弱的部分(成為局部性的氣流的流動,發生洗滌效率差的場所,流動的異物的放出去處也變零亂),但藉由每次使基板S移動進行吸附、洗滌,交錯地配置的白努利吸盤107被隨機地配置,因此可消除洗滌力弱的部分。Using the foreign matter removing apparatus of this modification example, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment. In this case, washing is performed by the part where the airflow on the outer circumference of the
(第六變形例) 利用圖11來說明有關第六變形例的基板的洗滌。圖11是說明第六變形例的基板背面用的異物除去裝置的圖,圖11(A)是平面圖,圖11(B)是圖11(A)的B1-B2線的剖面圖,圖11(C)是圖11(A)的C1-C2線的剖面圖。(Sixth Modification) The cleaning of the substrate related to the sixth modification example will be described with reference to FIG. 11. FIG. 11 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a sixth modification. FIG. 11(A) is a plan view, FIG. 11(B) is a cross-sectional view taken along the line B1-B2 of FIG. 11(A), and FIG. 11( C) is a cross-sectional view taken along the line C1-C2 of FIG. 11(A).
第六變形例的異物除去裝置100F是不使用第五變形例的異物除去裝置100E的銷106E,藉由白努利吸盤107,板101E與基板S是在非接觸的狀態下進行洗滌。另外,基板S的寬度方向的兩端部是藉由搬送引導裝置52來保持。The foreign
如圖10(D)所示般,白努利吸盤107是具有從中央部的下方噴出氣體的噴嘴107a,在噴嘴107a的周邊具有複數的凹部107b。如參考文獻所示般,當白努利吸盤107的上面(作動面)107c與基板S的間隙大時,噴嘴107a、凹部107b及作動面107c與基板S的間隙是分別實現執行噴嘴、真空室及擴散器(Diffuser)的機能,因此在凹部107b產生負壓,吸引基板S。一旦基板S被吸引,與作動面107c的間隙變小,則凹部107b實現壓力室型空氣緩衝(氣墊)的機能,凹部107b的壓力會急劇地上昇,拉開基板S。可將保持此凹部107b的均衡的壓力的作動面107c與基板S的距離以自動地保持的距離保持於非接觸的狀態。
[參考文獻]「採用『氣體垂直噴流方式』,使氣體流的摩擦損失減少『白努利吸盤』『浮動吸盤SA-C(SAN)型』理論解析」,URL http://www.solarlab.co.jp/sacr
藉此,基板S是可保持固定的狀態,使交錯地配置白努利吸盤107的板101E以晶粒的間距(基板洗滌區域)以上的寬度來移動於前後(X方向),可在非接觸狀態下均等地進行洗滌。另外,亦可藉由圓形地構成板使旋轉,在非接觸狀態下均等地進行洗滌。As shown in FIG. 10(D), the
利用本變形例的洗滌裝置,與第一實施形態同樣地洗滌基板S的表面及背面。但,在第一實施形態的洗滌動作的步驟S2或步驟S3中,如上述般使板101E移動。With the cleaning device of this modification, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment. However, in step S2 or step S3 of the washing operation of the first embodiment, the
(第七變形例) 利用圖12來說明有關第七變形例的基板的洗滌。圖12是說明第七變形例的基板背面用的異物除去裝置的圖,圖12(A)是平面圖,圖12(B)是圖12(A)的B1-B2線的剖面圖,圖12(C)是圖11(A)的C1-C2線的剖面圖。(Seventh modification) The cleaning of the substrate related to the seventh modification will be described with reference to FIG. 12. FIG. 12 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a seventh modification. FIG. 12(A) is a plan view, FIG. 12(B) is a cross-sectional view taken along the line B1-B2 of FIG. 12(A), and FIG. 12( C) is a cross-sectional view taken along the line C1-C2 of FIG. 11(A).
第七變形例的異物除去裝置100G是具備:在第六變形例的異物除去裝置100F的板101E的白努利吸盤107以外的場所設置吸引口101a的板101G,及覆蓋板101G的側面及下面的漏斗狀的罩(cover)108。在此,板101G的X方向及Y方向的長度是與板101E的X方向及Y方向的長度相同。以氣流去除的異物是從罩108的排出口吸引。The foreign
利用本變形例的異物除去裝置,與第一實施形態同樣地洗滌基板S的表面及背面。但,在第一實施形態的洗滌動作的步驟S2或步驟S3中,如上述般藉由吸引機構經由吸引口101a來吸引異物。With the foreign matter removing apparatus of this modification example, the front and back surfaces of the substrate S are cleaned in the same manner as in the first embodiment. However, in step S2 or step S3 of the washing operation of the first embodiment, the suction mechanism sucks foreign objects through the
亦可設置:在第五變形例的異物除去裝置100E的板101E的白努利吸盤107以外的場所設置吸引口,吸引以氣流去除的異物之機構。It is also possible to provide a mechanism for installing a suction port in a place other than the
若根據第一實施形態及其變形例,則可在矯正了基板的彎曲之狀態下進行基板的背面的洗滌。並且,可同時洗滌基板的表面及背面的雙方。進行基板的兩面的洗滌時,可縮短洗滌時間。而且,在基板的彎曲的矯正不須新的機構,可減低成本。又,由於在基板的表面的洗滌時不用真空吸附平台,因此可減低異物往基板的背面的附著。而且,基板的背面的洗滌也成為可能,可減低基板的背面的異物所造成接合時的孔隙等的發生。並且,可期待處理能力提升。According to the first embodiment and its modification, the back surface of the substrate can be cleaned in a state where the curvature of the substrate is corrected. In addition, both the front surface and the back surface of the substrate can be cleaned at the same time. When washing both sides of the substrate, the washing time can be shortened. Moreover, no new mechanism is required for the correction of the curvature of the substrate, and the cost can be reduced. In addition, since the vacuum suction stage is not used when cleaning the surface of the substrate, it is possible to reduce the adhesion of foreign matter to the back surface of the substrate. Furthermore, it is possible to clean the back surface of the substrate, and it is possible to reduce the occurrence of voids during bonding caused by foreign matter on the back surface of the substrate. And, the processing capacity can be expected to increase.
<第二實施形態> 第一實施形態是一邊藉由白努利效應來吸附基板,一邊進行洗滌,但第二實施形態不是藉由白努利效應來吸附基板,而藉由吹氣(air blow)來進行洗滌。<The second embodiment> In the first embodiment, washing is performed while adsorbing the substrate by the Bernoulli effect, but the second embodiment is not by adsorbing the substrate by the Bernoulli effect, but by air blow.
利用圖13~15來說明有關第二實施形態的基板的洗滌。圖13是說明第二實施形態的異物除去裝置的基板的表面側的圖,圖13(A)是平面圖,圖13(B)是圖13(A)的B1-B2線的剖面圖,圖13(C)是圖13(A)的C1-C2線的剖面圖。圖14是說明第二實施形態的異物除去裝置的基板的背面側的圖,圖14(A)是平面圖,圖14(B)是圖14(A)的B1-B2線的剖面圖,圖14(C)是圖14(A)的C1-C2線的剖面圖。圖15是說明第二實施形態的異物除去裝置的基板的表面側及背面側的圖,圖15(A)是平面圖,圖15(B)是圖15(A)的B1-B2線的剖面圖,圖15(C)是圖15(A)的C1-C2線的剖面圖。The cleaning of the substrate according to the second embodiment will be described with reference to FIGS. 13 to 15. 13 is a diagram illustrating the surface side of the substrate of the foreign matter removing apparatus of the second embodiment, FIG. 13(A) is a plan view, FIG. 13(B) is a cross-sectional view taken along the line B1-B2 of FIG. 13(A), and FIG. 13 (C) is a cross-sectional view taken along the line C1-C2 of FIG. 13(A). 14 is a diagram illustrating the back side of the substrate of the foreign matter removing device of the second embodiment, FIG. 14(A) is a plan view, FIG. 14(B) is a cross-sectional view taken along the line B1-B2 of FIG. 14(A), and FIG. 14 (C) is a cross-sectional view taken along the line C1-C2 of Fig. 14(A). 15 is a diagram illustrating the front side and back side of the substrate of the foreign matter removing apparatus of the second embodiment, FIG. 15(A) is a plan view, and FIG. 15(B) is a cross-sectional view taken along the line B1-B2 of FIG. 15(A) , Fig. 15(C) is a cross-sectional view taken along the line C1-C2 of Fig. 15(A).
如圖13所示般,第二實施形態的異物除去裝置200是具備:覆蓋被搬送於搬送引導裝置52的基板S的上面的上罩(板)201U,及用以在上罩201U與基板S之間從搬送引導裝置52的附近流動氣體於Y方向的噴嘴203U。噴嘴203U是從上罩201U的上方延伸至基板S側,彎曲成與基板S平行地吹出氣體。基板搬送位置(高度)與上罩201U的間隔是設為2~5mm程度,上罩的X方向的長度,亦即基板S的通過部分的長度(Lc)是比基板長(Ls)長,最好與使用的基板的最大寬度同等的寬度。As shown in FIG. 13, the foreign
如圖14所示般,第二實施形態的異物除去裝置200是具備:覆蓋被搬送於搬送引導裝置52的基板S的下面的下罩(板)201L,及用以在下罩201L與基板S之間從搬送引導裝置52的附近流動氣體於Y方向的噴嘴203L。噴嘴203L是從下罩201L的下方延伸至基板S側,彎曲成與基板S平行地吹出氣體。基板搬送位置(高度)與下罩201L之間隔是設為2~5mm程度,下罩的X方向的長度,亦即基板S的通過部分的長度(Lc)是比基板長(Ls)長,最好與使用的基板的最大寬度同等的寬度。As shown in FIG. 14, the foreign
如圖15所示般,在異物除去裝置200的上罩201U與下罩201L之間,一邊將基板S搬送於X方向,一邊從一方的搬送引導裝置52的附近的噴嘴203U及噴嘴203L吹出氣體,在Y方向流動氣體,藉由從相反側的搬送引導裝置52的附近吸引的吹氣來進行基板S的表面及背面的洗滌。As shown in FIG. 15, between the
<第二實施形態的變形例> 以下,有關第二實施形態的代表性的變形例,舉幾個例示。在以下的變形例的說明中,對於具有與在上述的第二實施形態說明者同樣的構成及機能的部分,可使用與上述的第二實施形態同樣的符號。而且,有關如此的部分的說明是在技術上不矛盾的範圍內可適當援用上述的第二實施形態的說明。又,上述的第一實施形態或第二實施形態的一部分及第一實施形態或第二實施形態的複數的變形例的全部或一部分是在技術上不矛盾的範圍內可適當地複合性地適用。<Modifications of the second embodiment> Hereinafter, a few examples will be given for representative modifications of the second embodiment. In the description of the following modification examples, the same reference numerals as those of the second embodiment described above can be used for parts having the same configuration and functions as those described in the second embodiment described above. In addition, the description of such a part is that the description of the above-mentioned second embodiment can be appropriately used within a range that is not technically contradictory. In addition, part of the first embodiment or the second embodiment described above, and all or part of the plural modification examples of the first embodiment or the second embodiment can be appropriately combined and applied within a range that is not technically contradictory. .
(第八變形例) 圖16是說明第八變形例的異物除去裝置的基板的表面側及背面側的剖面圖。(Eighth Modification) 16 is a cross-sectional view illustrating the front side and the back side of the substrate of the foreign matter removing apparatus of the eighth modification.
在第二實施形態是設為藉由彎曲的噴嘴203U,203L來從上方或下方導入氣體,與基板平行地吹出氣體的構成,但第八變形例的異物除去裝置200A是取代噴嘴203U,203L,藉由下述的構成來吹出氣體。In the second embodiment, the
在異物除去裝置200A中,從被設在一方的搬送引導裝置52的上方的氣體供給部203UA的氣體吹出口203a來吹出氣體至上罩201U與基板S之間,從設在該搬送引導裝置52的下方的氣體供給部203LA的氣體吹出口203b吹出氣體至下罩201L與基板S之間。藉由吹氣來從基板S的兩面除去的異物是藉由具備被設在另一方的搬送引導裝置52的上方的吸入口204a及被設在下方的吸入口204b之排氣部204來從排氣口204c排氣。In the foreign
(第九變形例) 圖17是說明第九變形例的異物除去裝置的基板的表面側及背面側的剖面圖。(Ninth modification) FIG. 17 is a cross-sectional view illustrating the front side and the back side of the substrate of the foreign matter removing device of the ninth modification.
第九變形例的異物除去裝置200B是在第八變形例的異物除去裝置200A的上罩201U及下罩201L的基板S側的表面設置在與基板之間成為亂流般的突起205,使洗滌能力提升。亦可為溝來取代突起205。The foreign
(第十變形例) 圖18是說明第十變形例的異物除去裝置的基板的表面側及背面側的圖,圖18(A)是基板為上彎曲的情況的剖面圖,圖18(B)是基板為下彎曲的情況的剖面圖,圖18(C)是在基板無彎曲的情況的剖面圖。(Tenth Modification) 18 is a diagram illustrating the front side and the back side of the substrate of the foreign material removal device of the tenth modification. FIG. 18(A) is a cross-sectional view when the substrate is curved upward, and FIG. 18(B) is the substrate curved downward Fig. 18(C) is a cross-sectional view of the case where the substrate is not bent.
在第二實施形態是從一方的搬送引導裝置52的附近吹出氣體,在Y方向流動氣體,藉由從相反側的搬送引導裝置52的附近吸引的吹氣來進行基板S的表面及背面的洗滌,但在第十變形例的異物除去裝置200C是構成由上罩201U的中央部的吹出口201a及下罩201L的中央部的吹出口201b進行吹氣,將該空氣從搬送引導裝置52所位置的側的兩端排氣。藉由來自基板中央部的兩面的吹氣,一邊調整(矯正)基板S的彎曲,以平坦的狀態搬送,一邊同時進行基板S的兩面的洗滌。In the second embodiment, gas is blown from the vicinity of the
如圖18(A)所示般,當基板S為上彎曲時,增多上罩201U側的吹氣量,減少下罩201L側的吹氣量。如圖18(B)所示般,當基板S為下彎曲時,減少上罩201U側的吹氣量,增多下罩201L側的吹氣量。如圖18(C)所示般,在基板S無彎曲時,使上罩201U側的吹氣量與下罩201L側的吹氣量形成相同。As shown in FIG. 18(A), when the substrate S is bent upward, the amount of air blowing on the side of the
(第十一變形例) 圖19是說明第十一變形例的異物除去裝置的基板的表面側及背面側的剖面圖。(Eleventh Modification) 19 is a cross-sectional view illustrating the front side and the back side of the substrate of the foreign matter removing device of the eleventh modification.
第十一變形例的異物除去裝置200D是在第十變形例的異物除去裝置200C的吹出口201a、201b設置非接觸位移感測器206,測定與基板S的間隔,判斷彎曲,以將上罩201U及下罩201L與基板S保持於預定的間隔之方式調整空氣量進行控制。另外,上罩201U及下罩201L的高度(位置)是亦可設為可自動調整,一邊以非接觸位移感測器206來確認與基板S的間隔,一邊縮小上罩201U及下罩201L的位置,使洗滌效率提升。The foreign
在第二實施形態及其變形例是在基板搬送路的上下賦予蓋(罩),在與基板之間流動氣體,從基板的端部側吸引,進行搬送中的基板的洗滌。藉此,可在搬送區域的空間設置清靜區域,且以基板本身隔開基板的背面側與表面側。又,可一併洗滌基板全面,可拉長每面積的洗滌時間,可提升異物除去率。又,可同時在搬送中洗滌基板的表面及背面的雙方。可在搬送中進行洗滌,可削減洗滌噴嘴移動的時間,因此可縮短洗滌時間。又,洗滌中的除去異物的擴散會被防止,可防止異物再度附著於洗滌後的搬送中的基板。又,由於進行基板的背面的洗滌,因此可減低基板的背面的異物所造成接合時的孔隙等的發生。又,可將清靜空氣的流動的空間保持於適當的位置關係,可安定地維持最適的異物除去狀態。又,基板搬送時的彎曲也會被防止,可適當地保持上罩及下罩與基板的間隔,可防止接觸等,因此可使搬送故障減少。 [實施例]In the second embodiment and its modification, a cover (cover) is provided on the upper and lower sides of the substrate conveying path, gas flows between the substrate and the substrate is sucked from the end side of the substrate, and the substrate being conveyed is cleaned. Thereby, a quiet area can be provided in the space of the transfer area, and the back side and the front side of the substrate can be separated by the substrate itself. In addition, the entire substrate can be washed at one time, the washing time per area can be lengthened, and the foreign matter removal rate can be improved. In addition, both the front surface and the back surface of the substrate can be cleaned simultaneously during transportation. The washing can be carried out during conveyance, and the time for the washing nozzle to move can be reduced, so the washing time can be shortened. In addition, the diffusion of the removed foreign matter during washing is prevented, and the foreign matter can be prevented from reattaching to the substrate being transported after washing. In addition, since the back surface of the substrate is washed, it is possible to reduce the occurrence of voids during bonding caused by foreign matter on the back surface of the substrate. In addition, the space where the quiet air flows can be maintained in an appropriate positional relationship, and the optimum foreign matter removal state can be stably maintained. In addition, bending of the substrate during transportation is also prevented, and the distance between the upper cover and the lower cover and the substrate can be appropriately maintained, and contact, etc., can be prevented, so that transportation failures can be reduced. [Example]
圖20是表示實施例的黏晶機的概略的俯視圖。圖21是說明在圖20中由箭號A方向來看時,拾取頭及接合頭的動作的圖。Fig. 20 is a schematic plan view showing the die bonder of the embodiment. Fig. 21 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 20.
黏晶機10是大致區分具有:供給安裝於基板S的晶粒D的晶粒供給部1、拾取部2、中間平台部3、接合部4、搬送部5、基板供給部6、基板搬出部7及監視控制各部的動作的控制部8,該基板S是印刷了一個或複數的最終成為1封裝的製品區域(以下稱為封裝區域P)。Y軸方向為黏晶機10的前後方向,X軸方向為左右方向。晶粒供給部1會被配置於黏晶機10的前側,接合部4會被配置於後側。The
首先,晶粒供給部1是供給安裝於基板S的封裝區域P的晶粒D。晶粒供給部1是具有:保持晶圓11的晶圓保持台12,及從晶圓11頂起晶粒D的以點線所示的頂起單元13。晶粒供給部1是藉由未圖示的驅動手段來移動於XY方向,使拾取的晶粒D移動至頂起單元13的位置。First, the
拾取部2是具有:拾取晶粒D的拾取頭21,及使拾取頭21移動於Y方向的拾取頭的Y驅動部23,以及使夾頭22昇降、旋轉及X方向移動的未圖示的各驅動部。拾取頭21是具有將被頂起的晶粒D吸附保持於前端的夾頭22(圖21也參照),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21是具有使夾頭22昇降、旋轉及X方向移動的未圖示的各驅動部。The pick-up
中間平台部3是具有:暫時性地載置晶粒D的中間平台31,及為了識別中間平台31上的晶粒D的平台識別攝影機32。The
接合部4是從中間平台31拾取晶粒D,接合於被搬送至接合平台BS上來的基板S的封裝區域P上,或層疊於已被接合於基板S的封裝區域P上的晶粒上的形式接合。接合部4是具有:具備與拾取頭21同樣地將晶粒D吸附保持於前端的夾頭42(圖21也參照)的接合頭41,及使接合頭41移動於Y方向的Y驅動部43,以及攝取基板S的封裝區域P的位置識別標記(未圖示),識別接合位置的基板識別攝影機44。
藉由如此的構成,接合頭41是根據平台識別攝影機32的攝像資料來修正拾取位置・姿勢,從中間平台31拾取晶粒D,根據基板識別攝影機44的攝像資料來將晶粒D接合至基板S。The
搬送部5是具有:抓住基板S搬送的基板搬送爪51,及基板S所移動的搬送引導裝置52。基板S是以沿著搬送引導裝置52而設的未圖示的滾珠螺桿來驅動被設在搬送引導裝置52的基板搬送爪51的未圖示的螺帽,藉此移動於X方向。
藉由如此的構成,基板S是從基板供給部6沿著搬送引導裝置52來移動至接合位置,接合後,移動至基板搬出部7,將基板S交給基板搬出部7。The conveying
控制部8是具備:儲存監視控制黏晶機10的各部的動作的程式(軟體)的記憶體,及實行被儲存於記憶體的程式的中央處理裝置(CPU)。The
異物除去裝置9是具有:進行空氣吹出及空氣吸入的洗滌噴嘴91,及將洗滌噴嘴91驅動於Y方向及Z方向的驅動部93。The foreign
其次,利用圖22、23來說明有關晶粒供給部1的構成。圖22是表示晶粒供給部的外觀立體圖的圖。圖23是表示晶粒供給部的主要部的概略剖面圖。Next, the structure of the crystal
晶粒供給部1是具備:移動於水平方向(XY方向)的晶圓保持台12,及移動於上下方向的頂起單元13。
晶圓保持台12是具有:
保持晶圓環14的膨脹環15;及
將被保持於晶圓環14黏著複數的晶粒D的切割膠帶16定位於水平的支撐環17。
頂起單元13是被配置於支撐環17的內側。The
晶粒供給部1是在晶粒D的頂起時,使保持晶圓環14的膨脹環15下降。其結果,被保持於晶圓環14的切割膠帶16會被拉伸,晶粒D的間隔擴大,藉由頂起單元13來從晶粒D下方頂起晶粒D,使晶粒D的拾取性提升。另外,隨著薄型化,將晶粒黏著於基板的黏著劑從液狀成為薄膜狀,在晶圓11與切割膠帶16之間貼附被稱為晶粒黏結薄膜(DAF;Die Attach Film)18的薄膜狀的黏著材料。在具有晶粒黏結薄膜18的晶圓11中,切割是對於晶圓11與晶粒黏結薄膜18進行。因此,在剝離工程中,從切割膠帶16剝離晶圓11與晶粒黏結薄膜18。晶粒黏結薄膜18是藉由加熱而硬化。The
黏晶機10是具有:識別晶圓11上的晶粒D的姿勢的晶圓識別攝影機24,及識別被載置於中間平台31的晶粒D的姿勢的平台識別攝影機32,以及識別接合平台BS上的安裝位置的基板識別攝影機44。必須修正識別攝影機間的姿勢偏差的是參與接合頭41的拾取的平台識別攝影機32及參與接合頭41的往安裝位置的接合的基板識別攝影機44。The
圖24是說明圖20的黏晶機的黏晶工程的流程圖。
在實施例的黏晶工程中,首先,控制部8是從晶圓盒取出保持晶圓11的晶圓環14而載置於晶圓保持台12,將晶圓保持台12搬送至進行晶粒D的拾取的基準位置(晶圓裝載)。其次,控制部8是從藉由晶圓識別攝影機24所取得的畫像,以晶圓11的配置位置會與該基準位置正確地一致的方式進行微調整。FIG. 24 is a flowchart illustrating the die bonding process of the die bonding machine of FIG. 20.
In the die bonding process of the embodiment, first, the
其次,控制部8是使載置有晶圓11的晶圓保持台12以預定間距移動,保持於水平,藉此將最初被拾取的晶粒D配置於拾取位置(晶粒搬送)。晶圓11是預先藉由探針等的檢查裝置來按每個晶粒進行檢查,產生按每個晶粒顯示良、不良的地圖資料,記憶於控制部8的記憶裝置。成為拾取對象的晶粒D為良品或不良品的判定是依據地圖資料來進行。控制部8是當晶粒D為不良品時,使載置有晶圓11的晶圓保持台12以預定間距移動,其次將被拾取的晶粒D配置於拾取位置,跳過不良品的晶粒D。Next, the
控制部8是藉由晶圓識別攝影機24來攝取拾取對象的晶粒D的主面(上面),從取得的畫像算出拾取對象的晶粒D離上述拾取位置的位移量。控制部8是根據此位移量來使載置有晶圓11的晶圓保持台12移動,將拾取對象的晶粒D正確地配置於拾取位置(晶粒確認(步驟S1))。The
控制部8是以基板供給部6來將基板S載置於搬送引導裝置52(基板裝載)。控制部8是使基板S移動至接合位置(基板搬送)。The
控制部8是為了除去基板的異物而洗滌基板S(基板洗滌(步驟S3))。基板洗滌,表面是利用異物除去裝置9,背面是利用第一實施形態、第一變形例~第七變形例的任一個的異物除去裝置,在實施形態如上述般進行。The
控制部8是為了接合而在接合前以基板識別攝影機44來攝取基板而識別基板S的封裝區域P的位置進行定位(基板識別(步驟S4))。The
控制部8是將拾取對象的晶粒D正確地配置於拾取位置之後,藉由包含夾頭42的接合頭41來從切割膠帶16拾取晶粒D(步驟S2),根據步驟S4的基板識別結果來黏晶於封裝區域P或已被接合於封裝區域P的晶粒(步驟S5)。After the
控制部8是接合晶粒D之後,檢查該接合位置是否正確。控制部8為了檢查接合安裝結果,再度以基板識別攝影機44來攝取基板S的封裝區域P而進行基板S的封裝區域P的位置識別(步驟S6)。控制部8是以基板識別攝影機44來攝取晶粒D而進行晶粒D的位置識別(步驟S7),由基板識別及晶粒識別結果來進行接合後的晶粒D的位置的檢查。控制部8是與事前登錄的接合位置作比較,進行數值輸出與檢查・判定。After the
以後,晶粒D會按照同樣的程序來1個1個接合於基板S的封裝區域P。一旦1個的基板的接合完了,則將基板S移動至基板搬出部7(基板搬送),將基板S交給基板搬出部7(基板卸載)。From now on, the die D will be bonded to the package area P of the substrate S one by one according to the same procedure. Once the bonding of one substrate is completed, the substrate S is moved to the substrate unloading section 7 (substrate transfer), and the substrate S is delivered to the substrate unloading section 7 (substrate unloading).
又,按照同樣的程序,晶粒D1個1個從切割膠帶16剝離。若去除不良品,全部的晶粒D的拾取完了,則將以晶圓11的外形來保持該等晶粒D的切割膠帶16及晶圓環14等卸載至晶圓盒。In addition, according to the same procedure, the die D1 is peeled from the dicing
以上,根據實施形態、變形例及實施例來具體地說明本發明者們所研發的發明,但本發明是不限於上述實施形態、變形例及實施例,當然亦可實施各種變更。In the foregoing, the invention developed by the inventors has been specifically explained based on the embodiment, modification, and embodiment. However, the present invention is not limited to the above embodiment, modification, and embodiment. Of course, various modifications can be implemented.
例如,在第一實施形態及其變形例中,亦可在板的氣流所流動的區域設置氣流會形成亂流之類的突起,使洗滌效率提升。For example, in the first embodiment and its modified examples, it is also possible to provide protrusions such as turbulent flow formed by the air flow in the area where the air flow of the plate flows, thereby improving the washing efficiency.
在第一實施形態及其變形例中,說明在基板的表面的洗滌使用異物除去裝置9的例子,但在基板的表面的洗滌亦可與基板的背面的洗滌同樣地使用第一實施形態及其變形例的異物除去裝置。此情況,基板的表面側的異物除去裝置的板的吸引力是設定成比基板的背面側的異物除去裝置的板弱。例如,減弱流至基板的表面側的異物除去裝置的板的氣流,或減緩溝的擴大,或減緩溝的深度的變化。In the first embodiment and its modified examples, an example in which the foreign
在第二實施形態是說明異物除去裝置洗滌基板的表面及背面的兩面的例子,但亦可只洗滌基板的表面或背面的任一方。In the second embodiment, an example was described in which the foreign matter removing device cleans both the front and back surfaces of the substrate, but it is also possible to clean only either the front surface or the back surface of the substrate.
又,在實施例中,說明基板的表面是使用異物除去裝置9,背面是使用第一實施形態及其變形例的任一個的異物除去裝置的例子,但表面也亦可使用第一實施形態及其變形例的任一個的異物除去裝置。又,表面及背面是亦可使用第二實施形態及其變形例的任一個的異物除去裝置。又,亦可表面是使用第二實施形態及其變形例的任一個的異物除去裝置,背面是使用第一實施形態及其變形例的任一個的異物除去裝置。In addition, in the embodiment, the foreign
又,在第二實施形態中,亦可在上罩及下罩設置空氣吹出口及吸引口,按各個的晶粒設置區域進行洗滌。Furthermore, in the second embodiment, the upper cover and the lower cover may be provided with air blowing ports and suction ports, and washing may be performed for each crystal grain installation area.
又,實施例為了縮短接合頭41的移動距離,縮短處理時間,而設置中間平台31,但亦可為不設中間平台31,直接以接合頭41來從晶圓拾取晶粒D的構成。In addition, in the embodiment, in order to shorten the moving distance of the
又,亦可設置旋轉夾頭的驅動部,作為可將拾取後的晶粒的上下反轉的反轉頭。In addition, a driving part of the rotating chuck may be provided as a reversing head capable of reversing the up and down of the picked-up die.
又,亦可為具備複數組包含拾取部、對準部和接合部的安裝部及搬送引導裝置之黏晶機,或亦可為具備複數組包含拾取部、對準部和接合部的安裝部,具備一個搬送引導裝置。In addition, it may also be a die bonder equipped with a plurality of mounting parts including a picking part, an alignment part, and a joining part, and a conveying guide device, or it may be equipped with a multiple mounting part including a picking part, an aligning part, and a joining part , Equipped with a conveying guide device.
又,第二實施形態是在基板搬送中實施洗滌,但不限於此,例如,亦可在對於先行的基板的黏晶中的待機位置停止中進行洗滌。In addition, in the second embodiment, the cleaning is performed during substrate transport, but it is not limited to this. For example, the cleaning may be performed while the standby position in the die bonding to the preceding substrate is stopped.
5‧‧‧搬送部
52‧‧‧搬送引導裝置
9‧‧‧異物除去裝置
91‧‧‧洗滌噴嘴
100‧‧‧異物除去裝置
101‧‧‧板
102‧‧‧溝
103‧‧‧供給管
104‧‧‧排出口
S‧‧‧基板
P‧‧‧封裝區域5‧‧‧
圖1是說明比較例的基板的表面的洗滌方法的圖面。 圖2是說明基板的彎曲的圖。 圖3是說明第一實施形態的基板背面用的異物除去裝置的圖。 圖4是說明第一實施形態的基板表面用的異物除去裝置及基板背面用的異物除去裝置的圖。 圖5是說明第一實施形態的異物除去裝置的洗滌動作的流程圖。 圖6是說明第一變形例的基板背面用的異物除去裝置的圖。 圖7是說明第二變形例的基板背面用的異物除去裝置的圖。 圖8是說明第三變形例的基板背面用的異物除去裝置的圖。 圖9是說明第四變形例的基板背面用的異物除去裝置的圖。 圖10是說明第五變形例的基板背面用的異物除去裝置的圖。 圖11是說明第六變形例的基板背面用的異物除去裝置的圖。 圖12是說明第七變形例的基板背面用的異物除去裝置的圖。 圖13是說明第二實施形態的異物除去裝置的基板表面側的圖。 圖14是說明第二實施形態的異物除去裝置的基板背面側的圖。 圖15是說明第二實施形態的異物除去裝置的基板表面側及背面側的圖。 圖16是說明第八變形例的異物除去裝置的基板表面側及背面側的剖面圖。 圖17是說明第九變形例的異物除去裝置的基板表面側及背面側的剖面圖。 圖18是說明第十變形例的異物除去裝置的基板表面側及背面側的剖面圖。 圖19是說明第十一變形例的異物除去裝置的基板表面側及背面側的剖面圖。 圖20是表示實施例的黏晶機的概略俯視圖。 圖21是從圖20的箭號A所見的概略側面圖。 圖22是表示圖20的晶粒供給部的外觀立體圖的圖。 圖23是表示圖20的晶粒供給部的主要部的概略剖面圖。 圖24是說明圖20的黏晶機的黏晶工程的流程圖。Fig. 1 is a diagram illustrating a method of cleaning the surface of a substrate of a comparative example. Fig. 2 is a diagram illustrating the bending of the substrate. Fig. 3 is a diagram illustrating the foreign matter removing device for the back surface of the substrate according to the first embodiment. 4 is a diagram illustrating the foreign matter removing device for the front surface of the substrate and the foreign matter removing device for the back surface of the substrate according to the first embodiment. Fig. 5 is a flowchart illustrating the washing operation of the foreign matter removing apparatus of the first embodiment. Fig. 6 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a first modification. Fig. 7 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a second modification. Fig. 8 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a third modification. Fig. 9 is a diagram illustrating a foreign matter removing device for a substrate back surface of a fourth modification. Fig. 10 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a fifth modification. FIG. 11 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a sixth modification. FIG. 12 is a diagram illustrating a foreign matter removing device for the back surface of a substrate according to a seventh modification. Fig. 13 is a diagram illustrating the surface side of the substrate of the foreign matter removing apparatus of the second embodiment. Fig. 14 is a view explaining the back surface side of the substrate of the foreign matter removing apparatus of the second embodiment. Fig. 15 is a view for explaining the front side and the back side of the substrate of the foreign matter removing device of the second embodiment. 16 is a cross-sectional view illustrating the front surface side and the back surface side of the substrate of the foreign matter removing device of the eighth modification. FIG. 17 is a cross-sectional view illustrating the front side and the back side of the substrate of the foreign matter removing device of the ninth modification. 18 is a cross-sectional view illustrating the front surface side and the back surface side of the substrate of the foreign matter removing apparatus of the tenth modification. 19 is a cross-sectional view illustrating the front side and the back side of the substrate of a foreign matter removing apparatus according to an eleventh modification. Fig. 20 is a schematic plan view showing the die bonder of the embodiment. Fig. 21 is a schematic side view seen from arrow A in Fig. 20. Fig. 22 is a diagram showing an external perspective view of the crystal grain supply part of Fig. 20. Fig. 23 is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 20. FIG. 24 is a flowchart illustrating the die bonding process of the die bonding machine of FIG. 20.
9‧‧‧異物除去裝置 9‧‧‧Foreign body removal device
52‧‧‧搬送引導裝置 52‧‧‧Transport guide device
91‧‧‧洗滌噴嘴 91‧‧‧Washing nozzle
100‧‧‧異物除去裝置 100‧‧‧Foreign body removal device
101‧‧‧板 101‧‧‧Board
103‧‧‧供給管 103‧‧‧Supply pipe
104‧‧‧排出口 104‧‧‧Exhaust outlet
S‧‧‧基板 S‧‧‧Substrate
P‧‧‧封裝區域 P‧‧‧Package area
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| KR102578464B1 (en) * | 2020-06-10 | 2023-09-14 | 세메스 주식회사 | Substrate transfer module and die bonding apparatus including the same |
| JP7520637B2 (en) * | 2020-08-18 | 2024-07-23 | ファスフォードテクノロジ株式会社 | Die bonding apparatus, cleaning head, and method for manufacturing semiconductor device |
| CN117296141A (en) * | 2021-05-14 | 2023-12-26 | 罗姆股份有限公司 | Support stand, support device, and method for manufacturing semiconductor device |
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| KR102715132B1 (en) * | 2024-03-05 | 2024-10-07 | 권석 | Workbench for PCB mounting |
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