TWI712851B - Photomask, method of manufacturing a photomask, and method of manufacturing an electronic device - Google Patents

Abstract

Object: To provide a photomask capable of carrying out high-resolution photolithography by using a proximate exposure apparatus. Solution: A photomask 10 is for use in proximate exposure and has a transfer pattern obtained by patterning a transmission control film formed on a transparent substrate 21. The transfer pattern includes a transmission control portion 36 obtained by forming the transmission control film on the transparent substrate 21 and having a line shape with a width of 10 μm or less, and a light transmitting portion 37 in which the transparent substrate 21 is exposed and which is adjacent to the transmission control portion 36. The transmission control portion 36 has a phase shift amount exceeding 180 degrees with respect to exposure light for exposing the photomask 10.

Description

Photomask, photomask manufacturing method and electronic component manufacturing method

The invention relates to a photomask, a manufacturing method of a photomask, and a manufacturing method of an electronic component.

In the production of electronic components such as flat panel displays and semiconductor integrated circuits, a photomask having a transfer pattern formed by patterning an optical film such as a light shielding film on a main surface of a transparent substrate is used.

In particular, as a mask for manufacturing a semiconductor integrated circuit (hereinafter, LSI: Large-scale Integrated Circuit), a halftone type phase shift mask is known. This mask sets the light-shielding area in the binary mask to have a transmittance to the extent that the pattern will not be transferred, as a structure that shifts the phase of the transmitted light by 180 degrees, and improves the resolution performance (Non-Patent Document 1) .

On the other hand, in the image display device, there is also a requirement for an increase in the number of pixels and a higher resolution. Therefore, an attempt is being made to use a phase shift mask in the manufacture of the image display device ( Patent Document 1).

In addition, there are known multi-stage halftone masks used in the manufacture of flat panel displays. For example, a semi-transmitting film pattern and a light-shielding film pattern having a transmittance of 20-50% and a retardation of 60-90 degrees are provided on a transparent substrate. By using such a multi-step halftone mask, a photoresist pattern with a different film thickness depending on the position can be formed with one exposure, which can reduce the number of lithography steps in the manufacturing steps of flat panel displays, thereby reducing manufacturing cost. The half-tone mask for this purpose can use transparent substrates, semi-transmissive films and shading films to achieve 3 gray scales, and it can also realize half-tone masks with 4 gray levels or more using multiple semi-transmissive films (patent Literature 2). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2014-092727 [Patent Document 2] Japanese Patent Application Publication No. 2018-005072 [Non-Patent Literature] [Non-Patent Document 1] Tian Xie Gong, Takehana Yoichi, Homoto Morihisa, First edition of "Basic Technology of Mask Electronic Parts Manufacturing", Tokyo Denki University Publishing Bureau, April 20, 2011, p.245-246

[The problem to be solved by the invention]

In the manufacture of flat panel displays, there are situations where proximity exposure methods are used. Compared with a projection exposure device, the proximity exposure device is inferior to the projection exposure device in terms of analytical performance. However, the proximity exposure device does not provide an imaging optical system between the photomask and the transferred body (display substrate, etc.). Therefore, the device structure is simple, the device introduction is relatively easy, and the manufacturing cost advantage is high. The proximity exposure device is mainly used in the manufacture of black matrix or black stripes (hereinafter also referred to as black matrix, etc.) or photosensitive spacer (PS: Photo Spacer) used in the color filter (CF: Color Filter) of liquid crystal display devices . In addition, it can also be used for the manufacture of black matrixes of organic EL display devices.

On the other hand, due to the increased pixel density or brightness of flat panel displays, and the requirements for power saving, the photomask used in the manufacturing process has a significant tendency to refine the pattern for transfer. If the projection exposure method is used for the transfer of fine patterns, the resolution is more advantageous, but the above advantages of using the proximity exposure are lost. Therefore, the application of the proximity exposure method and the fine transfer of fine patterns are a new issue. [Technical means to solve the problem]

The first aspect of the present invention is a close-up exposure photomask provided with a transfer pattern formed by patterning a transmission control film formed on a transparent substrate, The transfer pattern has: a transmission control portion formed by forming a transmission control film on the transparent substrate and having a linear shape with a width of 10 μm or less; and A light-transmitting portion for exposing the transparent substrate, and adjacent to the transmission control portion to sandwich the transmission control portion; and The transmission control unit has a phase shift amount exceeding 180 degrees with respect to the exposure light for exposing the photomask.

The second aspect of the present invention is the mask of the first aspect, wherein The phase shift ϕ of the above-mentioned transmission control unit with respect to the exposure light satisfies the following formula: ϕ≧195.

The third aspect of the present invention is the mask of the first or second aspect, wherein The phase shift ϕ of the above-mentioned transmission control unit with respect to the exposure light satisfies the following formula: 225≦ϕ≦330.

The fourth aspect of the present invention is the mask of any one of the first to third aspects, wherein The transmittance of the above-mentioned transmission control unit with respect to the exposure light is less than 30%.

The fifth aspect of the present invention is the photomask of any one of the first to fourth aspects, wherein The above-mentioned photomask is used for exposing a positive photosensitive material.

The sixth aspect of the present invention is the photomask of any one of the first to fifth aspects, wherein The above-mentioned photomask is used for close exposure by exposure light having a wavelength range of 313-365 nm.

The seventh aspect of the present invention is the mask of any one of the first to sixth aspects, wherein The transmission control part has a line pattern with a width of 3-10 μm.

The eighth aspect of the present invention is the photomask of any one of the first to seventh aspects, wherein The pattern for transfer is a pattern for forming a black matrix or black stripes.

The ninth aspect of the present invention is a manufacturing method of electronic components for flat panel displays, which includes the following steps: Prepare the mask of any one of the first to eighth aspects; and The transfer step involves exposing the above-mentioned photomask by a proximity exposure device, and transferring the above-mentioned transfer pattern on the positive photosensitive material film formed on the transferable body; and In the above transfer step, a close-up exposure with the close-up gap set to a range of 50-150 μm is applied.

The tenth aspect of the present invention is a method for manufacturing a photomask, which includes a method for manufacturing a photomask for proximity exposure with a transfer pattern formed by patterning a transmission control film formed on a transparent substrate, and the method includes The following steps: Prepare a mask base with the transmission control film formed on the transparent substrate; and The patterning step is to pattern the transmission control film to form the pattern for transfer, and The transfer pattern includes: a transmission control portion formed by forming the transmission control film on the transparent substrate and having a linear shape with a width of 10 μm or less; and A light-transmitting portion for exposing the transparent substrate, and adjacent to the transmission control portion to sandwich the transmission control portion; and The transmission control unit has a transmittance of less than 30% and a phase shift amount of more than 180 degrees with respect to the exposure light for exposing the photomask. [Effects of Invention]

According to the present invention, it is possible to provide a photomask capable of transferring a transfer pattern having a finer size with a high resolution using a proximity exposure device.

When the design of electronic components to be obtained such as flat-panel displays is high-definition and the density increases, it is inconvenient to simply refine the transfer pattern of the mask used to manufacture the electronic components.

For example, when the proximity exposure method is used to expose a transfer pattern containing a pattern of lines and gaps, as the pattern width (CD: Critical Dimension) or pitch width becomes finer, the pattern analysis in the transferred body Becomes difficult. The reason is that with the miniaturization, the influence of light diffraction becomes larger.

FIG. 1 shows an example of a transfer pattern 35 for forming a black matrix or the like. The transfer pattern 35 is formed on the transparent substrate 21 (see FIG. 5 ), and has a transmission control portion 36 and a light transmission portion 37. The light-transmitting portion 37 is an interval portion where the front surface of the transparent substrate 21 is exposed, and the transmission control portion 36 is formed on the transparent substrate 21 with a line portion that transmits a control film. That is, the transfer pattern 35 includes a line pattern that passes through the control portion 36 and a light-transmitting portion 37 adjacent to it repeats regularly, and is arranged in parallel with a fixed pitch P.

However, in the previous photomask, the area corresponding to the transmission control portion 36 is formed on the transparent substrate as a light-shielding portion formed with a light-shielding film that does not substantially transmit light to be exposed. In this case, as the pattern becomes finer and the CD becomes smaller, the contrast of the transferred image formed on the transferred body by the proximity exposure deteriorates. It is believed that the reason lies in the fact that light is diffracted at the edge of the line pattern, and its influence becomes larger to a level that cannot be ignored as the pattern becomes finer.

At this time, a photosensitive material pattern (a three-dimensional structure that becomes a part of the element to be obtained, or a resist pattern used as an etching mask) formed by the photosensitive material on the transferred body is exposed and developed. The shape or size is different from the design defect. Furthermore, hereinafter, for convenience, the photosensitive material on the transferred body is also referred to as resist.

On the other hand, a so-called halftone type phase shift mask with a structure (phase shift film) that has a specific range of light transmittance with respect to the exposed light and shifts the phase of the exposed light by 180 degrees is mainly used instead of the light shielding film. It is used in the field of semiconductor device manufacturing photomask (LSI photomask) for projection exposure. Therefore, it is considered that the transfer pattern can be transferred more accurately by using this halftone type phase shift mask as a proximity exposure mask. Therefore, the improvement of the transferability of the pattern when the transmission control unit 36 in FIG. 1 is formed with a phase shift film that shifts the phase of the transmitted light by 180 degrees has been studied. However, as shown in the following embodiment, the effect is not necessarily as expected.

Generally speaking, it is known that Fresnel diffraction works in the principle of forming a transfer image by proximity exposure. FIG. 24 is a schematic diagram showing a situation in which exposure light passing through a mask having a light-shielding portion formed by a light-shielding film and a light-transmitting portion reaches a point on the transferred body in the proximity exposure. Light waves are represented by the periodic structure of solid and dashed lines. The solid line represents the mountain of waves, and the dotted line represents the valley of waves (the mountain and valley can also be considered inverted). It can be seen that the light passing through the mask moves forward while being diffracted (scattered) on the edge. As shown in Fig. 24, a part of the diffracted light can also reach the area on the transferred body corresponding to the light shielding portion.

Next, FIG. 25 shows a case where a transmission control portion formed by a transmission control film having a specific transmittance and phase shift function is provided instead of the above-mentioned light shielding portion. Here, in addition to the diffracted light from the light-transmitting portion, the transmitted light (having a phase different from the light transmitted through the light-transmitting portion) that has passed through the control portion also reaches the transferred body. In FIG. 25, the light transmitted through the transmission control portion has a light intensity corresponding to its transmittance, and therefore, it is represented by thin lines (straight lines and dotted lines).

In any of the above-mentioned cases of Fig. 24 and Fig. 25, the amplitude information U(x, y) of the light at a point (x, y) on the transferred body is in the following Fresnel diffraction equation (1) approximate. (J. W. Goodman, Introduction to Fourier Optics (3rd Edition); Roberts & Company Publishers (2016): 66-7)

In formula (1), ξ and η respectively represent the X and Y coordinates on the mask. That is, U(ξ, η) is the amplitude information of the light in the coordinates (ξ, η) on the mask. Also, z represents the proximity gap, λ represents the wavelength of the exposure light, k represents the wave number, and j represents the imaginary unit.

[Number 1]

Moreover, the above-mentioned amplitude information U(x, y) in all positions in a specific surface on the transfer body is integrated to determine the light intensity distribution of the transfer image and is transferred to the transfer body.

It can be seen from the above formula (1) that when performing close-up exposure to the transfer pattern of the mask, it is more useful to optimize the phase and amplitude of the light on the transferred body to improve the resolution of the formed transfer image . Therefore, for the Fresnel diffraction generated in the existing binary mask, the possibility of making it a more favorable light intensity distribution is considered.

According to the research of the present inventor, when investigating the above situation, it is found that the phase shift amount (180 degrees) of the halftone type phase shift mask used in projection exposure is not necessarily the best in close-up exposure.

Moreover, as a result of research, it is found that the transfer pattern for proximity exposure (for example, the transmission control portion 36 in FIG. 1) is formed by a transmission control film with a phase shift effect, and the phase shift amount is set to be relatively high. When the phase shift amount of some halftone type phase shift masks is larger, it can more effectively suppress the degradation of the resolution of fine patterns.

[Embodiment 1] 1 and 5, the mask 10 of the first embodiment is constructed by arranging a specific transfer pattern 35 on one main surface of a transparent substrate 21 with a rectangular or square plate-shaped main surface. The transparent substrate is made by processing a transparent material such as synthetic quartz and polishing the main surface to be flat and smooth. As the photomask substrate for flat panel displays, it is preferable to use one whose main surface is 300-2000 mm and the thickness is 5-16 mm, for example.

The pattern 35 for transfer which the photomask 10 has is shown in FIG. 1 as an example. The transfer pattern 35 is formed with a line and gap pattern formed by a line-shaped transmission control portion 36 formed by a transmission control film formed on the front surface of the transparent substrate 21 and a light transmission portion 37 is regularly arranged at a specific interval .

The pattern 35 for transfer preferably has the following shape. For example, the transfer pattern 35 includes a line pattern including the transmission control portion 36, and its width B is preferably 3≦B≦10(μm), Better 3≦B≦8(μm), Better 3≦B≦6(μm).

According to the above, in a flat panel display, a good black matrix or black stripes with a high aperture ratio can be obtained (hereinafter, these are also collectively referred to as black matrix 52). Even with such a high-definition pattern with a fine CD, if the present invention is applied, the degradation of resolution can be reduced, and the effect is remarkable.

In addition, the transfer pattern 35 may be a line pattern of the above-mentioned width and a pattern of lines and gaps arranged regularly through a space pattern including the light-transmitting portion 37, or may further have an intersection with the above-mentioned line pattern (at a right angle or an acute angle). Or obtuse angle) other line patterns. That is, it is also possible to form a grid pattern in which lines and gap patterns are arranged vertically and horizontally. This other line pattern may also be set to include the transmission control part 36 on the transparent substrate. Other line patterns can also be those that include the light-shielding portion of width B'. In this case, it is preferable that B'>B.

Here, in the line and gap pattern of FIG. 1, the width of the transmission control portion 36 constituting the line pattern is B, and the width of the light transmission portion 37 constituting the interval pattern is D. Therefore, the distance P between the line and the gap pattern is B+D.

Moreover, the distance P between the line and the gap pattern in Figure 1 can be set as 10≦P≦35(μm), Better to be set 15≦P≦35(μm). When the pitch P is this level, it can be suitably used for high-definition displays ranging from 250 ppi to a maximum of 850 ppi.

In addition, when performing proximity exposure using such a transfer pattern, the proximity gap G is preferably 50 to 200 μm. Furthermore, according to the present invention, even when there is in-plane unevenness in the proximity gap G, the in-plane unevenness of the transferred image caused thereby can be reduced. The collimation angle of the close-up exposure is preferably about 1.5 to 2.5 degrees.

Considering the use of the transfer pattern as described above, a linear pattern having a width of 10 μm or less is formed on the body 51 to be transferred corresponding to the linear transmission control portion 36 of the aforementioned width B. For example, as a width of 3 to 10 μm and finer, a pattern having a width of 3 to 8 μm and further a width of 3 to 6 μm can be formed to form a black matrix 52 with a fine width.

In the photomask 10 of the first embodiment, the transmission control film used to form the transmission control portion 36 has the effect of shifting the phase of the light for exposing the photomask 10 by ϕ (degree). That is, the phase shift amount ϕ through the control film is ϕ>180 (degrees).

Furthermore, the so-called ϕ>180, that is, the phase offset exceeding 180 degrees represents the range of the phase offset ϕ defined by equation (2). In formula (2), M represents a non-negative integer. 180+360M＜ϕ＜360+360M(degree) ‥‥‥(2)

Here, the so-called exposure light for exposing the photomask 10 is to expose the transfer pattern 35 by the proximity exposure device 50 (refer to FIG. 2), and the light used for the transfer is preferably used including 313 Exposure light with a wavelength in the range of ~365 nm. In the exposure light including a plurality of wavelengths, any wavelength (preferably a wavelength with an intensity peak) included in the above-mentioned wavelength range can be used as a representative wavelength and set as a reference for the above-mentioned phase shift amount ϕ.

For example, when using exposure light that includes a wavelength in the range of 313 to 365 nm, 313 nm on the short-wavelength side can be used as the representative wavelength, or 334 nm, which is close to the central value of the above wavelength range, can be used as the representative wavelength . Alternatively, 365 nm on the longest side of the above-mentioned wavelength range can also be set as the representative wavelength.

Furthermore, when the light for exposure includes a plurality of wavelengths, it is preferable to set ϕ>180 for all wavelengths included in the above-mentioned wavelength range.

Therefore, for example, when the photomask 10 is a photomask for close-exposure by exposure light in the wavelength region of 313 to 365 nm, the transmission control section 36 can be set to be on the longest wavelength side. A mask with a phase shift of more than 180 degrees for light with a wavelength of 365 nm. In this case, substantially, with respect to all wavelengths in the aforementioned wavelength range included in the exposure light, the phase shift amount transmitted through the control portion 36 becomes a value exceeding 180 degrees. Or, when the wavelength of the exposure light is set to include 365-436 nm (i-ray, h-ray, g-ray), 436 nm on the longest wavelength side can also be set as the representative wavelength, which will transmit relative to it. The phase shift of the control film ϕ is set to ϕ>180. Furthermore, in the wavelength region of the exposure light used, the wavelength with the highest light intensity can also be set as the representative wavelength. When the high-pressure mercury lamp is used as the light source for exposure and i-rays, h-rays, and g-rays are used, the one with the highest light intensity is generally the i-ray.

In addition, the transmission control film used to form the transmission control portion 36 has a transmittance T with respect to the exposure light. The transmittance T is the value when the transmittance of the transparent substrate is 1.0 (100%). In addition, the transmittance referred to here can be the transmittance with respect to the same representative wavelength as described with respect to the phase shift amount.

The transmission control unit 36 is preferably set to a positive transmission rate T less than 0.3 (30%). The details of the transmittance T and the phase shift amount ϕ through the control unit 36 will be described below.

The mask 10 of the first embodiment is preferably used for the production of the black matrix 52 (see FIG. 3) that separates the sub-pixels constituting the flat panel display.

That is, the photomask 10 is a two-gray mask formed on the transferred body 51 where the photosensitive material is left and the part where the photosensitive material is not left, and passes through the control part 36 and the light-shielding part of the previous binary mask correspond.

The black matrix 52 is formed at a position corresponding to the transmission control portion 36 in FIG. 1 on the transferred body 51 (display panel substrate, etc.). The black matrix formation step is described below. Furthermore, a flat panel display is an example of an electronic component manufactured using the photomask 10 of the first embodiment.

When the flat panel display is a liquid crystal display, it is produced by sealing the liquid crystal between the color filter substrate and the TFT (Thin-Film-Transistor) substrate arranged oppositely. The black matrix 52 is formed on one surface of the color filter substrate. Between adjacent black matrices 52, red, green, and blue color filters are formed in a specific order.

When the flat panel display is an organic EL (electro-luminescence) display, red, green, and blue organic EL light-emitting elements are formed between adjacent black matrices 52 in a specific order.

In any case, the black matrix 52 has the function of preventing color mixing or light leakage between sub-pixels to make the images and images displayed on the flat panel display vivid. In order to realize a high-definition, that is, a flat panel display with small pixels and large pixel density and bright, the width of the black matrix 52 must be narrow (for example, 3-10 μm, more preferably 3-8 μm) and finely formed. In other words, it is important that the pattern with a fine width can be analyzed on the body 51 to be transferred.

Hereinafter, a case where the widths B and D shown in FIG. 1 are the values shown in Table 1 will be described as an example.

[Table 1]

The proximity exposure device 50 is preferably used in the exposure of the photomask 10 of the present invention. FIG. 2 is an explanatory diagram schematically illustrating the configuration of the proximity exposure device 50. When the proximity exposure device 50 irradiates the light emitted from the light source 57 to the back surface 12 side of the photomask 10 via the illumination system 58, it passes through to the front surface 11 side where the transfer pattern is formed, and reaches the transfer target body 51. A proximity gap G is provided between the photomask 10 and the transferred body 51.

The light source 57 can be a high-pressure mercury lamp. The high-pressure mercury lamp has strong peaks in i-rays, h-rays, and g-rays. However, in the exposure of the mask 10 of this embodiment 1, it is preferable to use i-rays (wavelength λ=365 nm) and shorter wavelengths Spectral group on the side. For example, it is more useful to use a positive resist having a good sensitivity range with respect to the peaks at 365 nm, 334 nm, and 313 nm.

Furthermore, FIGS. 3 and 4 illustrate the black matrix 52 formed on the transferred body 51. The black matrix 52 shown here includes a pattern of lines and gaps in which line portions of a positive photosensitive material are arranged at a specific pitch P. If the width (CD) of the line portion is set to E (μm) and the width (CD) of the space portion is set to F (μm), the pitch P is E+F, and the distance P (also That is, B+D) is the same as P=E+F=B+D.

On the other hand, the width E of the line portion of the black matrix 52 may be the same as the width B of the line pattern in FIG. 1, or may be smaller than B. Namely E≦B. In the case of E＜B, if it is set as: β=B-E(>0), Then β(μm) (bias voltage) can be set as: 0<β≦2.

The value of β can be adjusted according to the relative relationship between the amount of irradiated light during exposure and the resist sensitivity threshold.

However, when the transfer image with the required width is formed on the transferred body 51 as the line portion E of the black matrix 52, the light intensity value representing the width on the corresponding light intensity distribution curve can be set as the resist Agent sensitivity threshold.

5 is an explanatory diagram illustrating an example of the light intensity distribution formed on the transferred body 51 when the line pattern possessed by the photomask 10 is subjected to close-up exposure.

That is, FIG. 5(a) shows the cross-section of the photomask 10 having a line pattern (width 5 μm) including the transmission control portion 36 described using FIG. 1, and FIG. 5(b) shows the close exposure of the photomask 10 The pattern position and the light intensity distribution on the transferred body 51 corresponding to it. In FIG. 5(b), the horizontal axis represents the position where the center of the line pattern is set as the center, and the vertical axis represents the light intensity on the transferred body 51.

Here, 100 (%) on the vertical axis scale in Figure 5(b) means that the light intensity is 100%. This is equal to the intensity of the light received by the transferred body 51 by the light passing through the transparent substrate (that is, the light-transmitting portion 37 having a sufficiently large CD with respect to the resolution limit of the exposure device). On the other hand, zero on the vertical axis scale means that the transferred body 51 is not substantially exposed to exposure light. The following optical simulations are quantified based on the above standards.

Furthermore, in FIG. 5, the part where the light intensity exceeds 100% is observed due to the interference of the light reaching the position on the transferred body 51.

Such light intensity distribution can be obtained with high accuracy by optical simulation.

Figure 6 shows the simulation results of the light intensity distribution obtained according to the design of a plurality of transfer patterns. Here, it means the change of the light intensity distribution on the transferred body 51 that occurs when the proximity gap G, the transmittance T of the transmission control portion 36 constituting the line pattern, and the phase shift amount ϕ are respectively changed.

Table 2 shows the combination of the transmittance T and the phase shift amount ϕ of the transmission control unit 36.

[Table 2]

In the symbols a to i, the pattern of the photomask 10 is set to be infinitely arranged at equal intervals by using the line and gap pattern explained using FIG. 1.

The symbol a is a so-called binary mask through which the control portion 36 is formed by a light-shielding film that does not substantially transmit light to be exposed.

The symbol b is a halftone mask (shown as HTM in FIG. 6) that transmits part of the exposed light through the control unit 36 and does not have a phase shift effect.

Symbols c to i refer to the mask 10 (shown as PSM in FIG. 6) that transmits part of the transmitted light through the control unit 36 and has a different phase shift amount. The phase shift mask whose phase shift amount ϕ shown by the symbol f is 180 degrees has been used in the projection exposure mode since the previous. In the following description, the phase shift mask indicated by symbol f is described as a 180 degree phase shift mask.

In addition, the mask 10 with symbols c, d, and e whose phase shift amount is less than 180 degrees is set as a low phase shift mask, and the mask 10 with symbols g, h, and i whose phase shift is greater than 180 degrees is set as an over-offset angle Phase shift mask.

The general example of light intensity distribution is shown at the right end of Figure 6. As in FIG. 5, the horizontal axis represents the relative position with the center of the line pattern as the center, and the vertical axis represents the light intensity on the transferred body 51. The vertical axis ranges from 0% to 180%.

Figure 6 shows the light intensity distribution formed on the transferred body 51 when the proximity gap G explained using Figure 2 is set to 50 μm, 75 μm, 100 μm, 125 μm, and 150 μm, arranged in order from the left end of the row The simulation results.

Furthermore, the photomask 10 installed in the proximity exposure device 50 is bent due to its own weight, so the proximity gap between the center and the outer edge of the photomask 10 has different values. Or, there are cases where a more complicated in-plane distribution (unevenness) of the proximity gap is caused by a holding mechanism that applies a load to the mask 10 for the purpose of reducing the bending. In particular, the tendency of the mask 10 for a flat panel display with a larger size is remarkable. In Figure 6, the change in the level of the proximity gap G is based on the influencer.

That is, the optical simulation using Fresnel diffraction is used for the effect on the transfer image on the transfer object 51 when the value of the proximity gap cannot be avoided to a certain extent in the mask surface. verification.

In the simulation, exposure conditions in a wide wavelength region including light with wavelengths of 313 nm, 334 nm and 365 nm (intensity ratio 0.25:0.25:0.5) are applied. It is the main peak component below the i-ray in the photosensitive region of the resist suitable for the manufacture of the black matrix 52 in the emission spectrum of the high-pressure mercury lamp. Also, in the simulation, the collimation angle was set to 2.0 degrees. Furthermore, the phase shift amount ϕ transmitted through the control unit 36 is as shown in each of the masks a to i in FIG. 6 (the characteristic of the simulator is consistent with the specific ϕ at each wavelength).

The light intensity distribution obtained under each condition shown in Figure 6 was evaluated from the following viewpoints. The light intensity distribution curves are related to the shape of the resist pattern (including the three-dimensional structure containing the photosensitive material) obtained on the transferred body 51 by the exposure of the photomask 10. First, it is more ideal that the contrast of the light intensity distribution is higher. For example, it is preferable that in the light intensity distribution curve, the minimum value in the bottom of the light intensity near the center is sufficiently smaller than the maximum value observed on both sides. This aspect can be evaluated quantitatively by the following Michelson Contrast.

On the other hand, in the light intensity distribution curve, when the bottom with respect to the center of both sides is not low enough, the resolution of the line pattern deteriorates. For example, in FIG. 6, this tendency exists in the mask 10 (the mask in the area (A)) of the symbols a, b, and c. In particular, it shows that the line pattern is not easily resolved as the proximity gap G becomes larger. status.

Furthermore, it is preferable that in the light intensity distribution curve when the fine line pattern is formed, the downward convex shape near the bottom is more sharp.

Furthermore, according to Fig. 6, in the low phase shift mask (area (B)) where the phase shift amount ϕ indicated by symbols d to f is 90 degrees or more and 180 degrees or less, when the proximity gap G is small (for example, 50 μm), the light intensity distribution curve shows a cracked shape (depressed shape) at the front end with a small peak in the center. When such a cracked tip shape occurs, depending on the depth of the recess, there are also disadvantages such as unnecessary recesses in the structure of the positive photosensitive material formed on the transferred body 51 due to the exposure of the photomask 10 situation. Therefore, in order to form a pattern with a fine width on the transferred body 51, it is preferable to apply a mask 10 or a condition that does not significantly produce a tip crack shape.

On the other hand, in the over-offset phase shift mask (area (C)) shown by the symbols g to i, in the light intensity distribution curve, the minimum value at the bottom relative to the maximum value on both sides is relative to the other The photomask 10 is relatively small, showing an excellent profile, and also obtains good resolution in a wide range for the variation of the proximity gap G. Furthermore, no tip crack shape appeared in the light intensity distribution.

In addition, in FIG. 6, comparing the symbol f (a phase difference of 180 degrees) and the symbol g (a phase difference of 225 degrees), it can be seen that regardless of the proximity gap, the light intensity distribution of the latter is more favorable than the former. That is, it can be seen that if the phase difference passing through the control portion 36 exceeds 180 degrees, it is in a direction in which the transferability is improved.

Based on the above, the over-offset angle phase shift mask shown in FIG. 6 with the transmission control portion 36 having a phase shift amount exceeding 180 degrees is more advantageous than other masks 10.

The results of a more detailed evaluation of the offset angle phase shift mask using optical simulation are shown in FIG. 7.

Fig. 7 is the result of superimposing the light intensity distribution of the mask 10 with symbols a, b, f, g, h, and i when the proximity gap is set to 50 μm in the case shown in Fig. 5. Therefore, the advantages of the over-offset phase shift mask of the present invention over the existing mask 10 can be understood.

According to Fig. 7, in the over-offset phase shift mask shown by symbol h, the minimum value of light intensity is smaller, and the maximum value of light intensity is also larger. Therefore, the contrast Co of the exposed light becomes higher. In the light intensity distribution, no tip cracked shape was generated. Moreover, the over-offset angle mask 10 shown by the symbol g and the symbol i also forms a large difference between the maximum value and the minimum value of the light intensity, which is more advantageous.

It can be understood that in the over-offset phase shift mask (g～i), in the region where the phase shift ϕ exceeds 225 degrees and does not reach 315 degrees, the contrast (lower degree relative to the minimum value of the maximum value) It is also excellent. It can be seen that in this area, especially when 270≦ϕ, the downward convex shape near the bottom is sharp. If it is used for positive photosensitive materials, it will be beneficial to the formation of the fine pattern of tightening. The fine width of the line pattern The resolution is excellent.

The contrast Co of the exposed light can be quantitatively evaluated by the following methods. Use equation (3) to define the contrast Co in the first embodiment.

Co係對比度(Michelson contrast)。 Imin為被轉印體51上之光強度分佈之最小值。 Imax為被轉印體51上之光強度分佈之最大值。[Number 2]

Co system contrast (Michelson contrast). Imin is the minimum value of the light intensity distribution on the transferred body 51. Imax is the maximum value of the light intensity distribution on the transferred body 51.

In addition to the evaluation using the value of contrast, the following shows the evaluation of the shape of the light intensity curve. This evaluation is about the characteristics of component manufacturing using the offset angle phase shift mask. Therefore, more opinions are expected. Therefore, referring to FIG. 8, the evaluation method of the light intensity distribution shape will be described. As in FIG. 5, the horizontal axis represents the position, and the vertical axis represents the light intensity on the transferred body 51.

Assume the three light intensity distribution curves of L1 ~ L3 shown in Figure 8. Here, the maximum value (Imax) of both sides ("shoulder") is the highest in L2, which is relatively advantageous. In addition, L2, which has the lowest minimum value (Imin) of the central bottom part, is also relatively most advantageous in this respect.

On the other hand, according to the inventor's research, the shape of the light intensity distribution curves is also worth noting. That is, from the viewpoint of obtaining the resolution of fine patterns, the light intensity distribution curve of the downward convex shape of L3 is very advantageous. Therefore, from the viewpoint of the ease of forming the fine pattern, it is more useful to use the position of the inflection point N where the curve appears for evaluation. Specifically, when the position of the inflection point N is more inside (closer to the center), a higher evaluation corresponds to.

In order to quantitatively represent the above situation, the light intensity distribution curve formed on the transferred body 51 by the over-offset phase shift mask under various conditions is compared with the existing reference mask (a binary mask (a ), and the light intensity distribution curve of the 180° phase shift mask (f)), and perform the scoring shown in Table 3. Furthermore, in Table 3, the two so-called reference masks refer to the binary mask (a) and the 180° phase shift mask (f).

[table 3]

The maximum score is +3 and the minimum is -3. Based on Table 4, classify the scores of each over-offset phase shift mask. Hereinafter, this scoring result is also referred to as a shape level.

[Table 4]

That is, if it is A grade, the contour of the light intensity distribution curve obtained on the transferred body 51 corresponding to that of the existing reference mask is improved, if it is B grade, it is equal, if it is C grade, it is better. That corresponds to the deterioration of the quality of the transferred image.

Furthermore, the presence or absence of the tip crack shape and the depth of the tip crack portion were evaluated. As shown in Figure 9, in the light intensity distribution with the cracked tip shape, the minimum light intensity (Imin) (%) and the light intensity of the smaller peak at the center of the tip cracked part (Q) (%) The difference is defined as the depth δ of the tip crack. δ=Q－Imin(% points)・・・(4)

Figures 10 to 21 are explanatory diagrams of the simulation results of the close-up exposure. Figure 10 shows the contrast Co of a phase shift mask with a transmittance T of 5%. For example, the top row represents a 180-degree phase shift mask with a transmittance T of 5% and a phase shift amount of 180 degrees. The bottom is a binary mask with a transmittance T of 0%. The 180-degree phase shift mask and the binary mask are equivalent to the above-mentioned reference mask. The penultimate column represents a halftone mask without phase shift.

The 4-digit value below the decimal point represents the transmittance T of the transmission control unit 36, the phase shift amount ϕ, and the contrast Co of the proximity gap G. The inner side of the thick frame represents an area where the contrast Co is higher than any of the reference masks.

According to the result, it can be seen that the phase offset ϕ satisfies ϕ≧195 ・・・(5) In the over-offset phase shift mask, a higher contrast ratio than the reference mask can be obtained. Better 195≦ϕ≦345.

Furthermore, in 225≦ϕ≦330 ・・・(6) In this case, a higher contrast ratio than the reference mask is obtained in a wider range of the proximity gap G. That is, it can be seen that regardless of the in-plane variation of the proximity gap G, excellent contrast is obtained.

On the other hand, FIG. 11 shows the result of the above-mentioned ranking of the shape of the light intensity distribution curve using the same mask 10 as that of FIG. 10. The layout and bold frame of the figure are the same as in figure 10.

According to FIG. 11, within the range of the above formula (5), a favorable light intensity distribution curve shape is obtained at the same level as the reference mask, and it can be seen that it is easy to form fine patterns.

Fig. 12, Fig. 14, Fig. 16, Fig. 18, and Fig. 20 respectively show the contrast ratio Co for the phase shift masks with transmittance T of 10%, 15%, 20%, 30%, and 40%, as in Fig. 10. In addition, FIG. 13, FIG. 15, FIG. 17, FIG. 19, and FIG. 21 similarly show the shape levels of the phase shift masks with transmittance T of 10%, 15%, 20%, 30%, and 40%, respectively.

Furthermore, the hatched lines in Figs. 13, Fig. 15, Fig. 17, Fig. 19 and Fig. 21 indicate the part where the shape of the tip cracked portion is observed in the light intensity distribution curve. The shadow line of the vertical line indicates that the depth δ of the tip cracked part exceeds 5% points and is less than 10% points. The hatched line towards the lower right indicates that the depth δ of the tip cracked part exceeds 10% and the point is 15% or less. The shaded line towards the lower left indicates that the depth δ of the crack at the tip exceeds 15% points.

According to the simulation results, it can be seen that the over-offset phase shift mask is advantageous, especially when the phase shift ϕ satisfies the formula (5), the contrast or light intensity distribution curve above the existing reference mask can be obtained The shape level (hereinafter referred to as the shape level).

In particular, when the transmittance T is 30% or less, the contrast and shape level above the reference mask can be obtained within a wide range of the proximity gap G.

The range of phase offset ϕ is preferably set to ϕ≦330. Especially when the transmittance T is 10% or more, the contrast Co is more advantageous. Furthermore, it is preferably ϕ≦315. Especially when the transmittance T is 15% or more, a favorable contrast Co can be obtained. Also, Yu Wei ϕ≦300 In this case, a better contrast Co and shape level can be obtained within a wider numerical range of the proximity gap G.

Furthermore, for the range of the phase shift amount ϕ, the shape level is good when the proximity gap G is small (for example, 100 μm or less). However, in a region where the proximity gap G is small, depending on the value of the phase shift amount ϕ, there is a possibility that the front-end cracking shape may occur in the light intensity distribution curve. Therefore, if this situation is considered, it can be set as ϕ≧210, Better to be set ϕ≧240, It can also be set as ϕ≧255.

Also, for that ϕ≧255 In the range of, the contrast and shape level above the reference mask can be obtained within a wider range of the value of the proximity gap G. At ϕ≧270 In, the same effect is more significant.

For example, if T is 5-15%, then 210≦ϕ≦315 , It can show a better contrast or shape level than the reference mask. 240≦ϕ≦315 At this time, in a wider range of the proximity gap G, better contrast or shape levels than the reference mask can be obtained.

If T is 5-20%, then 210≦ϕ≦315 , It can show the contrast or shape level better than the reference mask, in 255≦ϕ≦315 At this time, in a wider range of the proximity gap G, better contrast or shape levels than the reference mask can be obtained.

Furthermore, the light intensity distribution of the tip cracked shape is observed in the over-offset phase shift mask of T≧15%, and the tip cracking depth δ exceeds in the over-offset phase shift mask of T≧30% 15% of points. From this viewpoint, the transmittance T of the transmission control portion 36 of the over-offset phase shift mask is preferably less than 30%.

That is, it is preferably T＜30, Better 5≦T<30. When the transmittance T is less than 5%, there is a risk that the effect of the over-offset phase shift mask cannot be sufficiently obtained.

However, even if the transmittance T is more than 30%, if the over-offset angle ϕ is selected as ϕ≧240, There is no problem with front end cracking, and pattern transfer can be performed.

In addition, when the transmittance T is 30% or more, it is also possible to obtain regions with excellent contrast or shape levels. However, in this region, compared to the case where T is 20% or less, the proximity gap G is better Small areas (for example, G<100 μm) have a tendency to decrease in the width within the thick frame, and also to decrease the area of shape grade A. Considering this aspect, the case where the transmittance T is 20% or less is more advantageous.

On the other hand, when the transmittance T is 30% or more, in the area with a larger proximity gap G (for example, G≧100 μm), compared with the smaller transmittance T, it can be seen that the value of the contrast Co is higher. high. Therefore, the optimal design of the transmittance T of the transmittance control portion 36 of the mask 10 can also be achieved according to the conditions or environment of the proximity exposure device 50 and the value of the center gap value.

According to the first embodiment, it is possible to provide a photomask 10 that is advantageous for transferring a transfer pattern of a fine width with high resolution using the proximity exposure device 50. That is, it is possible to provide a large-scale photomask 10 that can produce high-definition flat panel displays without using a projection exposure device, but by using a proximity exposure device 50 to improve cost efficiency.

According to the first embodiment, it is possible to provide a photomask 10 capable of performing high-resolution pattern transfer even when the proximity gap G in the photomask surface cannot be avoided due to its own weight. In particular, in a large-scale photomask 10 used for a flat panel display, the proximity gap G is easily changed due to bending. Therefore, the photomask 10 of the first embodiment is more effective.

According to the first embodiment, it is possible to provide a photomask 10 that can advantageously utilize the characteristics of Fresnel diffraction when photolithography is performed using a resist using a positive-type photosensitive material, thereby enabling fine pattern transfer to be performed .

As long as the transfer pattern 35 does not impair the effects of the present invention, in addition to the light-transmitting portion 37 for exposing the transparent substrate and the transmission control portion 36 including the transmission control film, it may also include a light-shielding film that does not substantially transmit light to be exposed. Additional patterns such as the formed shading part. As an additional pattern, there may be a semi-transmissive portion having a transmittance and a phase shift amount that are different from the transmission control portion 36 described above.

The photomask 10 is particularly advantageous for forming the black matrix 52 using a positive photosensitive material, but the application is not limited to these.

The mask 10 of the first embodiment can be preferably applied to a so-called dense pattern that includes, in addition to the line and gap patterns mentioned above, a lattice pattern that regularly repeats unit patterns at a distance that optically influence each other. Patterns for transfer.

[Embodiment 2] Fig. 22 is a schematic enlarged front view of the transfer pattern of the photomask 10 of the second embodiment. Compared with FIG. 1, it is a dense pattern in which line and space patterns, that is, line patterns and space patterns of the same shape are regularly arranged, and FIG. 22 is an isolated line pattern. Furthermore, when a plurality of unit patterns are arranged regularly to produce an optical effect with each other, they are often called dense patterns, but such patterns without interaction are called isolated patterns. The transfer pattern of the mask 10 of the second embodiment is an isolated line pattern with a fixed width B, where B is 5 μm.

In the transfer pattern of FIG. 22, similarly to the first embodiment, a close-up exposure simulation was performed, and the transferability of the offset angle phase shift mask was examined. The behavior of the contrast and light intensity distribution curve shape in the isolated line pattern is the same as the behavior of the contrast and light intensity distribution curve shape in the above-mentioned Embodiment 1. Therefore, it has been confirmed that in the isolated pattern, the over-offset phase shift mask is also it works.

FIG. 23 is an explanatory diagram illustrating an example of a simulation result of the exposure amount distribution on the transferred body 51 of the photomask 10 of the second embodiment.

Furthermore, here, since it is an isolated pattern, and there is no light interference between repeated patterns, the value of Imax is lower than that of the line and gap patterns. However, it can be seen that the over-offset phase shift masks shown by the symbols g, h, and i here are also the same as those in FIG. 7 and show superior transfer performance compared with the existing masks.

As shown in the above-mentioned embodiments 1 and 2, it can be seen that according to the over-offset angle phase shift mask, it is possible to provide a photolithography mask capable of stably analyzing fine line patterns using the proximity exposure device 50 10.

In addition, according to the research of the present inventors, even if the transfer pattern provided in the photomask 10 is an isolated pattern, excellent effects can be obtained as in the above-mentioned first embodiment. That is, according to the present invention, it is possible to provide a photomask 10 that can reduce the change in the shape of the transferred image (including CD) caused by the change in the proximity gap G according to the in-plane position of the photomask 10.

In particular, in a large-scale photomask 10 used for flat panel displays, it is more effective to use the photomask 10 of the first and second embodiments when the change of the in-plane proximity gap G cannot be avoided.

Furthermore, according to the above-mentioned embodiments 1 and 2, it is possible to provide a photomask 10 that can perform high-resolution transfer using a resist using a positive photosensitive material.

The transmission control film constituting the transmission control section 36 is set to have a specific exposure light transmittance and phase shift amount. Therefore, its composition or film thickness has been determined, and its composition can be uniform in the film thickness direction, or, It can be formed by laminating films of different composition or different physical properties to form a transmission control film.

However, as long as the effects of the present invention are not impaired, films with different additions (light-shielding films, etching stop films, etc.) can also be provided, and they can also have additions on the upper or lower surface side of the pattern of the transmission control film. The film pattern of the film.

In addition, it is also possible to have an additional film pattern (such as a light-shielding film pattern) on the outer peripheral side of the transfer pattern 35, and it is also possible to form such an additional film pattern as a mark pattern referred to during exposure or operation of the mask 10 .

In common with the above two embodiments, the photomask 10 of the present invention can be manufactured by the following manufacturing method, for example.

First, a mask base with a transmission control film formed on the transparent substrate 21 is prepared. When forming a film through the control film, select its material and film thickness in a way that satisfies a specific transmittance and phase shift with respect to the exposed light. As the film forming method, a known film forming method such as a sputtering method can be applied.

Next, a resist-attached photomask base with a resist film formed on the transmission control film is prepared. The resist may be positive or negative, but is preferably positive.

Then, the above-mentioned resist-attached photomask substrate is patterned. Specifically, a drawing device such as a laser drawing device is used to perform drawing using specific pattern data, and to perform development. Furthermore, a resist pattern formed by development is used as a photomask, and the transmission control film is subjected to dry or wet etching to form a transfer pattern 35. Then, the resist pattern is peeled off.

According to the above steps, the mask 10 can be formed by patterning only once (that is, drawing only once). That is, it is preferable to use only the photomask 10 formed by patterning the transmission control film. Optionally, additional film formation and patterning can be performed.

The material of the transmission control film can be, for example, a film containing Si, Cr, Ta, Zr, etc., and an appropriate one can be selected from these compounds.

As the Si-containing film, Si compounds (SiON, etc.), or transition metal silicides (MoSi, TaSi, ZrSi, etc.) or their compounds (oxides, nitrides, carbides, oxynitrides, oxycarbonitrides) can be used Wait).

As the Cr-containing film, Cr compounds (oxide, nitride, carbide, oxynitride, carbonitride, oxycarbonitride) can be used.

The present invention includes a method of manufacturing electronic components for flat panel displays using the photomask 10.

That is, a method for manufacturing an electronic component for a flat panel display includes: the step of preparing the above-mentioned over-offset phase shift mask; and the transfer step, which is by approaching the exposure device 50 to the offset angle phase shift mask Exposure is performed, and the transfer pattern 35 is transferred on the transfer target body 51; in the transfer step, a proximity exposure with a proximity gap of 50 to 200 μm is applied.

The use of the mask 10 can be preferably used for the manufacture of black matrix or black stripes, but is not limited to them. Among them, the photomask 10 of the present invention can be particularly preferably used for the purpose of forming a three-dimensional structure obtained by using a photosensitive material on the transferred body 51. The reason is that it is extremely meaningful to form a three-dimensional structure with a fine width that can be reliably analyzed and formed under stable conditions.

The technical features (constitutive elements) described in each embodiment can be combined with each other, and new technical features can be formed by the combination. It should be considered that the embodiment disclosed this time is illustrative in all aspects and not restrictive. The scope of the present invention is not the above-mentioned meaning, but is represented by the scope of the patent application, and intends to include the meaning equivalent to the scope of the patent application and all changes within the scope.

10: Mask 11: positive 12: back 21: Transparent substrate 35: Pattern for transfer 36: Through the control department 37: Translucent part 50: Proximity exposure device 51: Transferred body 52: black matrix or black stripes 56: Glass substrate 57: light source 58: lighting system

Fig. 1 is a schematic diagram showing an example of a transfer pattern for forming a black matrix or the like. Fig. 2 is an explanatory diagram illustrating the structure of the proximity exposure device. Fig. 3 is a cross-sectional explanatory view of a state in which a black matrix and the like are formed on the transferred body. Fig. 4 is a schematic diagram illustrating a black matrix and the like formed on the transfer body. 5(a) and (b) are explanatory diagrams illustrating the light intensity distribution formed on the transferred body. Fig. 6 is an explanatory diagram illustrating an example of the simulation result of the light intensity distribution on the transferred body. FIG. 7 is an explanatory diagram illustrating the result of a more detailed evaluation of the offset angle phase shift mask using optical simulation. Fig. 8 is an explanatory diagram illustrating the evaluation method of the light intensity distribution on the transferred body. Fig. 9 is an explanatory diagram illustrating the presence or absence of the front-end crack shape and the evaluation of the depth of the front-end crack. Fig. 10 is an explanatory diagram illustrating the simulation result of close-up exposure. Fig. 11 is an explanatory diagram illustrating the simulation result of close-up exposure. Fig. 12 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 13 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 14 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 15 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 16 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 17 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 18 is an explanatory diagram illustrating the simulation result of close-up exposure. Fig. 19 is an explanatory diagram illustrating the simulation result of close-up exposure. Fig. 20 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 21 is an explanatory diagram illustrating the simulation result of the close-up exposure. Fig. 22 is a schematic enlarged front view of the mask of the second embodiment. FIG. 23 is an explanatory diagram illustrating an example of the simulation result of the transferred image (light intensity distribution) of the second embodiment. FIG. 24 is a schematic diagram showing a situation in which the exposure light passing through the mask having the light-shielding portion and the light-transmitting portion reaches a point on the transferred body in the proximity exposure. FIG. 25 is a schematic diagram showing a situation in which exposure light passing through a photomask provided with a transmission control section with a specific transmittance and phase shift function reaches a point on the transferred body in the proximity exposure.

21: Transparent substrate

36: Through the control department

37: Translucent part

Claims (10)

A photomask for proximity exposure, which is provided with a transfer pattern formed by patterning a transmission control film formed on a transparent substrate, The above-mentioned transfer pattern includes: The transmission control part is formed by forming a transmission control film on the above-mentioned transparent substrate, and has a linear shape with a width of 10 μm or less; and A light-transmitting portion, which exposes the transparent substrate and is adjacent to the transmission control portion; The transmission control unit has a phase shift amount exceeding 180 degrees with respect to the exposure light for exposing the photomask. Such as the photomask of claim 1, wherein the phase offset ϕ of the transmission control unit with respect to the exposure light satisfies the following formula: ϕ≧195. Such as the photomask of claim 1, wherein the phase offset ϕ of the transmission control unit with respect to the exposure light satisfies the following formula: 225≦ϕ≦330. Such as the photomask of any one of claims 1 to 3, wherein the transmittance of the transmission control portion with respect to the exposure light is less than 30%. The photomask according to any one of claims 1 to 3, wherein the photomask is used for exposing a positive photosensitive material. The photomask according to any one of claims 1 to 3, wherein the photomask is used for close exposure by exposure light having a wavelength region of 313 to 365 nm. The photomask according to any one of claims 1 to 3, wherein the transmission control section has a line pattern with a width of 3-10 μm. The photomask of any one of claims 1 to 3, wherein the pattern for transfer is a pattern for forming a black matrix or black stripes. A manufacturing method of electronic components for flat panel displays, which includes the following steps: Prepare the photomask of any one of requirements 1 to 3; and The transfer step involves exposing the above-mentioned photomask by a proximity exposure device, and transferring the above-mentioned transfer pattern on the positive photosensitive material film formed on the transferable body; and In the above transfer step, a close-up exposure with the close-up gap set to a range of 50-150 μm is applied. A method for manufacturing a photomask is a method for manufacturing a photomask for proximity exposure with a transfer pattern formed by patterning a transmission control film formed on a transparent substrate. The method includes the following steps: Prepare a mask base with the transmission control film formed on the transparent substrate; and The patterning step is to pattern the transmission control film to form the pattern for transfer; and The above-mentioned transfer pattern includes: The transmission control part is formed by forming the transmission control film on the transparent substrate, and has a linear shape with a width of 10 μm or less; and A light-transmitting portion for exposing the transparent substrate, and adjacent to the transmission control portion to sandwich the transmission control portion; and The transmission control unit has a transmittance of less than 30% and a phase shift amount of more than 180 degrees with respect to the exposure light for exposing the photomask.

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