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TWI711135B - Die heat dissipation structure - Google Patents

Die heat dissipation structure Download PDF

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Publication number
TWI711135B
TWI711135B TW109100176A TW109100176A TWI711135B TW I711135 B TWI711135 B TW I711135B TW 109100176 A TW109100176 A TW 109100176A TW 109100176 A TW109100176 A TW 109100176A TW I711135 B TWI711135 B TW I711135B
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heat dissipation
contact portion
die
bare
curved surface
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TW109100176A
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Chinese (zh)
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TW202127610A (en
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劉漢敏
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大陸商深圳興奇宏科技有限公司
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Abstract

一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部,該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。A heat dissipation structure for a bare crystal includes a heat dissipation unit and a bare crystal. The heat dissipation unit has a first side and a second side. A contact portion is protrudingly formed on the second side, and one end of the contact portion is a Slightly convexly curved surface, the bare die has an upper surface and a lower surface, one end of the contact portion is in contact with the upper surface, and the upper surface is in a slightly concavely curved surface for contact with the contact portion Slightly convex surface appearance matches.

Description

裸晶的散熱結構Die heat dissipation structure

本發明是有關於一種裸晶的散熱結構,尤指一種可大幅減少熱阻問題並有效提升散熱效能之裸晶的散熱結構。The present invention relates to a heat dissipation structure of a bare crystal, in particular to a heat dissipation structure of a bare crystal that can greatly reduce the thermal resistance problem and effectively improve the heat dissipation efficiency.

半導體積體電路工業已經經歷了快速增長,半導體積體電路材料和設計中的技術進展已經產生了多代半導體積體電路,每一代半導體積體電路都比前一代半導體積體電路具有更小和更複雜的電路,然而,這些進展也已增加處理和製造半導體積體電路的複雜度。 傳統的晶片係包括裸晶(Die)及封裝殼體,通常裸晶與封裝殼體利用銦焊接方式或其他結合方式將其結合,然而,該結構設計會導致裸晶與封裝殼體的界面熱阻非常大,因此,近年來隨著功率變高及熱流密度變大,為了有效提升晶片的散熱效能,晶片廠於設計上取消了包覆晶片的封裝殼體元件,想藉以減少封裝殼體材料本體的熱傳導熱阻及界面材料的熱阻,始其成為裸晶、導熱膏及散熱器的結構之設計模式,但由於此種設計的裸晶矽材料的平面度、散熱器的重量、扣合力等要求相對較高,當裸晶於高溫工作時會產生形變,使得裸晶表面呈現一微凹曲面形狀,導致與散熱器相接觸貼合時會有一間隙而仍然存在熱阻問題,使得裸晶的熱量無法被散熱器迅速帶離,造成散熱效能的提升也非常有限。 以上所述,習知具有下列之缺點: 1.嚴重的熱阻問題; 2.散熱效能較差。 是以,要如何解決上述習用之問題與缺失,即為本案之發明人與從事此行業之相關廠商所亟欲研究改善之方向所在者。 The semiconductor integrated circuit industry has experienced rapid growth. The technological progress in semiconductor integrated circuit materials and design has produced multiple generations of semiconductor integrated circuits. Each generation of semiconductor integrated circuits is smaller and smaller than the previous generation of semiconductor integrated circuits. More complex circuits, however, these advances have also increased the complexity of processing and manufacturing semiconductor integrated circuits. The traditional chip system includes die and package shell. Usually the die and package shell are combined by indium welding or other bonding methods. However, this structural design will cause the interface between the die and the package shell to be heated. The resistance is very large. Therefore, in recent years, with the increase of power and heat flow density, in order to effectively improve the heat dissipation efficiency of the chip, the chip factory has eliminated the package shell components that cover the chip in the design, and wants to reduce the package shell material The thermal resistance of the main body and the thermal resistance of the interface material have become the design mode of the structure of the bare crystal, thermal paste and heat sink. However, due to the flatness of the bare silicon material of this design, the weight of the heat sink, and the fastening force The requirements are relatively high. When the die is working at a high temperature, it will deform, making the surface of the die appear a slightly concave curved shape, resulting in a gap when it is in contact with the heat sink and there is still a thermal resistance problem, which makes the die The heat cannot be quickly taken away by the radiator, resulting in a very limited improvement in heat dissipation efficiency. As mentioned above, conventional knowledge has the following shortcomings: 1. Serious thermal resistance problem; 2. Poor heat dissipation efficiency. Therefore, how to solve the above-mentioned conventional problems and deficiencies is the direction that the inventor of this case and the related manufacturers engaged in this industry urgently want to study and improve.

爰此,為有效解決上述之問題,本發明之主要目的在於提供一種大幅減少熱阻問題之裸晶的散熱結構。 本發明之次要目的,在於提供一種大幅提升散熱效能之裸晶的散熱結構。 為達上述目的,本發明係提供一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。 透過本發明此結構的設計,當該裸晶開始工作時會產生熱量,使得該裸晶在高溫狀態下其上表面會產生形變而呈現一微凹曲面態樣,藉由該散熱單元的接觸部一端之結構係呈一微凸曲面態樣,令該裸晶的上表面得以完全與該接觸部相接觸貼附結合,有效降低熱阻問題,進而達到該裸晶上的熱量可迅速被該散熱單元帶離,大幅提升散熱效能。 Therefore, in order to effectively solve the above-mentioned problems, the main purpose of the present invention is to provide a heat dissipation structure for bare crystals that greatly reduces the thermal resistance problem. The secondary objective of the present invention is to provide a heat dissipation structure of a bare die with greatly improved heat dissipation efficiency. To achieve the above objective, the present invention provides a heat dissipation structure of a bare die, which includes a heat dissipation unit and a bare die. The heat dissipation unit has a first side and a second side, and a contact is protrudingly formed on the second side. Portion (ie, the contact portion 210 is formed on the surface of the protrusion on the second side 21 of the heat dissipation unit), one end of the contact portion is in the form of a slightly convex curved surface, the die has an upper surface and a lower surface, the contact portion One end is in contact with the upper surface, and the upper surface is in a slightly concave curved surface to match the slightly convex curved surface of the contact portion. Through the design of the structure of the present invention, heat will be generated when the die starts to work, so that the top surface of the die will be deformed at a high temperature to present a slightly concave curved surface. The contact portion of the heat dissipation unit The structure at one end is in the form of a slightly convex curved surface, so that the upper surface of the die can be completely contacted and attached to the contact part, which effectively reduces the thermal resistance problem, so that the heat on the die can be quickly dissipated by the heat The unit is separated, which greatly improves the heat dissipation efficiency.

本發明之上述目的及其結構與功能上的特性,將依據所附圖式之較佳實施例予以說明。 請參閱第1、2圖,係為本發明之裸晶的散熱結構之分解圖及放大示意圖,如圖所示,一種裸晶的散熱結構,係包括一散熱單元2及一裸晶3,該散熱單元2係為一散熱器、散熱基座、均溫板等具散熱之元件,其具有一第一側20及一第二側21,於該第一側20上形成有複數散熱鰭片200,於該第二側21凸設形成一接觸部210(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部210一端係呈一微凸曲面態樣,於本實施例中,所述接觸部210與所述散熱單元2係以一體成形做說明,但並不限於此,使用者也可依照使用需求令該接觸部210及該散熱單元2為非一體成形,並且該接觸部210與該散熱單元2係選擇由銀、銅、鋁、鐵或其他高導熱材料所製成,該接觸部210與該散熱單元2可以是相同材質或不同材質,合先敘明。 所述裸晶3具有一上表面30及一下表面31,所述接觸部210一端與該上表面30相接觸貼合,並該上表面30係呈一微凹曲面態樣而得以與所述接觸部210之微凸曲面態樣相匹配,該下表面31則對應裝設於一基板4上。 續請參閱第2圖,本發明之散熱單元2及裸晶3的接觸面之間更形成有一微間隙(圖中未示),該微間隙對應塗佈設置一導熱塗層32,該導熱塗層32係為一導熱膏(Thermal grease)、導熱膠、導熱pad,而該導熱塗層32係用以更緊密填滿該微間隙以為了避免形成前述微間隙的產生而導致熱阻的產生。 因此,透過本發明此結構的設計,當該裸晶3開始工作時會產生熱量使得該裸晶3逐漸升溫,而由於裸晶3本身的材質及其製造過程等因素,會使該裸晶3在高溫狀態下產生形變,即,該裸晶3上表面30的中央處產生形變逐漸下凹而呈現一微凹曲面態樣,此時,透過該散熱單元2的接觸部210一端之結構係呈一微凸曲面態樣,而微凸曲面態樣與微凹曲面態樣的形狀係完全相匹配,得以令該接觸部210與該裸晶3的上表面30完全相接觸貼附,如此一來,可改善習知散熱單元的接觸界面呈平面狀與形變後的裸晶上表面之間相接觸貼合時產生的間隙而導致熱阻問題,本發明有效改善習知結構的熱阻問題,進而達到該裸晶3上的熱量可被該散熱單元2迅速帶離,大幅提升散熱效能。 需注意的是,由於該裸晶3上表面30所產生的形變(微凹曲面態樣)非常微小,其形變量通常以微米( )為單位量級,因此形變的彎曲弧度係介於50 ~70 ,而本發明所表示之圖式係以放大數倍進行說明,如此得以更加清楚明瞭本發明之結構設計,該散熱單元2接觸部210的微凸曲面態樣之彎曲弧度也是相當微小,另外,由於為微米( )量級的彎曲弧度,故該散熱單元2之第二側21係通常選擇利用研磨加工方式令該接觸部210呈一微凸曲面態樣,然而,微凸曲面態樣的製造方式並不限於研磨加工,也可利用CNC加工、刨削加工或其他加工方式,合先敘明。 以上所述,本發明相較於習知具有下列優點: 1.大幅減少熱阻問題; 2.大幅提升散熱效能。 以上已將本發明做一詳細說明,惟以上所述者,僅為本發明之一較佳實施例而已,當不能限定本發明實施之範圍,即凡依本發明申請範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍。 The above-mentioned objects and structural and functional characteristics of the present invention will be described based on the preferred embodiments of the accompanying drawings. Please refer to Figures 1 and 2, which are an exploded view and an enlarged schematic view of the heat dissipation structure of the die of the present invention. As shown in the figure, a heat dissipation structure of a die includes a heat dissipation unit 2 and a die 3. The The heat dissipating unit 2 is a heat sink, a heat dissipating base, a temperature equalizing plate and other components capable of dissipating heat. It has a first side 20 and a second side 21. A plurality of heat dissipating fins 200 are formed on the first side 20 A contact portion 210 is protrudingly formed on the second side 21 (that is, the contact portion 210 is formed on the surface of the protrusion of the second side 21 of the heat dissipation unit), and one end of the contact portion 210 is in a slightly convex curved shape. In this embodiment, the contact portion 210 and the heat dissipation unit 2 are described as being integrally formed, but it is not limited to this, and the user can also make the contact portion 210 and the heat dissipation unit 2 non-integrally formed according to usage requirements. And the contact portion 210 and the heat dissipation unit 2 are selected to be made of silver, copper, aluminum, iron or other high thermal conductivity materials. The contact portion 210 and the heat dissipation unit 2 can be made of the same material or different materials. Bright. The die 3 has an upper surface 30 and a lower surface 31, one end of the contact portion 210 is in contact with the upper surface 30, and the upper surface 30 is in a slightly concave curved shape to be in contact with the The slightly convex curved surface of the portion 210 matches, and the lower surface 31 is correspondingly installed on a substrate 4. Continuing to refer to Figure 2, a micro gap (not shown in the figure) is formed between the contact surface of the heat dissipation unit 2 and the die 3 of the present invention. The micro gap is correspondingly coated with a thermally conductive coating 32. The thermally conductive coating The layer 32 is a thermal grease, a thermally conductive glue, and a thermally conductive pad, and the thermally conductive coating 32 is used to more closely fill the micro-gap in order to avoid the formation of the aforementioned micro-gap and cause thermal resistance. Therefore, through the design of the structure of the present invention, when the die 3 starts to work, heat will be generated to make the die 3 gradually heat up, and due to factors such as the material of the die 3 and its manufacturing process, the die 3 Deformation occurs in a high temperature state, that is, the deformation at the center of the upper surface 30 of the bare die 3 gradually dents and presents a slightly concave curved surface. At this time, the structure at one end of the contact portion 210 of the heat sink 2 is A slightly convex curved surface, and the shape of the slightly convex curved surface and the slightly concave curved surface are completely matched, so that the contact portion 210 and the upper surface 30 of the die 3 are completely contacted and attached. , It can improve the thermal resistance problem caused by the gap generated when the contact interface of the conventional heat dissipation unit is planar and the upper surface of the deformed bare die contacting and bonding. The present invention effectively improves the thermal resistance problem of the conventional structure, and then The heat reaching the die 3 can be quickly removed by the heat dissipation unit 2, which greatly improves the heat dissipation efficiency. It should be noted that since the deformation (dimple curved surface state) produced by the upper surface 30 of the bare die 3 is very small, the deformation is usually in the order of micrometers ( ), so the curvature of the deformation is between 50 ~70 , and the drawing shown in the present invention is illustrated by magnification several times, so that the structural design of the present invention can be more clearly understood. The curvature of the slightly convex surface of the contact portion 210 of the heat dissipation unit 2 is also equivalent The second side 21 of the heat dissipating unit 2 usually chooses to use a grinding process to make the contact portion 210 appear a slightly convex curved surface because it is a curved arc on the order of micrometers ( ). The manufacturing method of the curved surface is not limited to grinding processing, CNC processing, planing processing or other processing methods can also be used. As mentioned above, the present invention has the following advantages compared with the prior art: 1. The problem of thermal resistance is greatly reduced; 2. The heat dissipation efficiency is greatly improved. The present invention has been described in detail above, but what is described above is only a preferred embodiment of the present invention, and should not limit the scope of implementation of the present invention, that is, all equivalent changes and modifications made in accordance with the scope of application of the present invention Etc., should still be covered by the patent of the present invention.

2:散熱單元 20:第一側 200:散熱鰭片 21:第二側 210:接觸部 3:裸晶 30:上表面 31:下表面 32:導熱塗層 4:基板2: Cooling unit 20: First side 200: cooling fins 21: second side 210: Contact 3: bare die 30: upper surface 31: lower surface 32: Thermally conductive coating 4: substrate

第1圖係為本發明裸晶的散熱結構之分解圖; 第2圖係為本發明裸晶的散熱結構之放大示意圖。 Figure 1 is an exploded view of the heat dissipation structure of the die of the present invention; Figure 2 is an enlarged schematic diagram of the heat dissipation structure of the bare die of the present invention.

2:散熱單元 2: Cooling unit

20:第一側 20: First side

200:散熱鰭片 200: cooling fins

21:第二側 21: second side

210:接觸部 210: Contact

3:裸晶 3: bare die

30:上表面 30: upper surface

31:下表面 31: lower surface

4:基板 4: substrate

Claims (7)

一種裸晶的散熱結構,係包括: 一散熱單元,具有一第一側及一第二側,於該第二側凸設形成一接觸部,該接觸部一端係呈一微凸曲面;及 一裸晶,具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面以與所述接觸部之微凸曲面相匹配。 A heat dissipation structure for bare crystals, including: A heat dissipation unit having a first side and a second side, a contact portion is convexly formed on the second side, and one end of the contact portion is a slightly convex curved surface; and A bare chip has an upper surface and a lower surface, one end of the contact part is in contact with the upper surface, and the upper surface is a slightly concave curved surface to match the slightly convex curved surface of the contact part. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元及裸晶間更形成一微間隙,該微間隙塗設一導熱塗層。The heat dissipation structure of the bare die according to claim 1, wherein a micro gap is formed between the heat dissipation unit and the bare die, and a thermally conductive coating is applied to the micro gap. 如請求項1所述之裸晶的散熱結構,其中所述接觸部與所述散熱單元係為一體成形或非一體成形其中任一。The heat dissipation structure of the bare die according to claim 1, wherein the contact portion and the heat dissipation unit are formed integrally or non-integrally. 如請求項1所述之裸晶的散熱結構,其中所述微凸曲面及微凹曲面之彎曲弧度係介於0.05mm~0.07mm。The heat dissipation structure of the bare crystal according to claim 1, wherein the curvature of the slightly convex curved surface and the slightly concave curved surface is between 0.05 mm and 0.07 mm. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元更形成有複數散熱鰭片,該等散熱鰭片係間隔排列於所述第一側上。The heat dissipation structure of the bare crystal according to claim 1, wherein the heat dissipation unit is further formed with a plurality of heat dissipation fins, and the heat dissipation fins are arranged at intervals on the first side. 如請求項1所述之裸晶的散熱結構,其中所述裸晶之下表面係對應裝設於一基板上。The heat dissipation structure of the bare die according to claim 1, wherein the lower surface of the bare die is correspondingly installed on a substrate. 如請求項1所述之裸晶的散熱結構,其中所述散熱單元之接觸部係透過研磨加工方式令該接觸部一端呈一微凸曲面。In the heat dissipation structure of the bare die as described in claim 1, wherein the contact portion of the heat dissipation unit is processed to make one end of the contact portion a slightly convex curved surface.
TW109100176A 2020-01-03 2020-01-03 Die heat dissipation structure TWI711135B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM244581U (en) * 2003-09-09 2004-09-21 Via Tech Inc Heat dissipating structure capable of protecting bare die package
TW200612810A (en) * 2004-10-13 2006-04-16 Mitac Int Corp Heat radiator
US20190378810A1 (en) * 2016-11-21 2019-12-12 Mitsubishi Electric Corporation Semiconductor device
TWM593131U (en) * 2020-01-03 2020-04-01 大陸商深圳興奇宏科技有限公司 Heat dissipation structure of bare crystal (die)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM244581U (en) * 2003-09-09 2004-09-21 Via Tech Inc Heat dissipating structure capable of protecting bare die package
TW200612810A (en) * 2004-10-13 2006-04-16 Mitac Int Corp Heat radiator
US20190378810A1 (en) * 2016-11-21 2019-12-12 Mitsubishi Electric Corporation Semiconductor device
TWM593131U (en) * 2020-01-03 2020-04-01 大陸商深圳興奇宏科技有限公司 Heat dissipation structure of bare crystal (die)

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