TWI711135B - Die heat dissipation structure - Google Patents
Die heat dissipation structure Download PDFInfo
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- TWI711135B TWI711135B TW109100176A TW109100176A TWI711135B TW I711135 B TWI711135 B TW I711135B TW 109100176 A TW109100176 A TW 109100176A TW 109100176 A TW109100176 A TW 109100176A TW I711135 B TWI711135 B TW I711135B
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- Prior art keywords
- heat dissipation
- contact portion
- die
- bare
- curved surface
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011257 shell material Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部,該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。A heat dissipation structure for a bare crystal includes a heat dissipation unit and a bare crystal. The heat dissipation unit has a first side and a second side. A contact portion is protrudingly formed on the second side, and one end of the contact portion is a Slightly convexly curved surface, the bare die has an upper surface and a lower surface, one end of the contact portion is in contact with the upper surface, and the upper surface is in a slightly concavely curved surface for contact with the contact portion Slightly convex surface appearance matches.
Description
本發明是有關於一種裸晶的散熱結構,尤指一種可大幅減少熱阻問題並有效提升散熱效能之裸晶的散熱結構。The present invention relates to a heat dissipation structure of a bare crystal, in particular to a heat dissipation structure of a bare crystal that can greatly reduce the thermal resistance problem and effectively improve the heat dissipation efficiency.
半導體積體電路工業已經經歷了快速增長,半導體積體電路材料和設計中的技術進展已經產生了多代半導體積體電路,每一代半導體積體電路都比前一代半導體積體電路具有更小和更複雜的電路,然而,這些進展也已增加處理和製造半導體積體電路的複雜度。 傳統的晶片係包括裸晶(Die)及封裝殼體,通常裸晶與封裝殼體利用銦焊接方式或其他結合方式將其結合,然而,該結構設計會導致裸晶與封裝殼體的界面熱阻非常大,因此,近年來隨著功率變高及熱流密度變大,為了有效提升晶片的散熱效能,晶片廠於設計上取消了包覆晶片的封裝殼體元件,想藉以減少封裝殼體材料本體的熱傳導熱阻及界面材料的熱阻,始其成為裸晶、導熱膏及散熱器的結構之設計模式,但由於此種設計的裸晶矽材料的平面度、散熱器的重量、扣合力等要求相對較高,當裸晶於高溫工作時會產生形變,使得裸晶表面呈現一微凹曲面形狀,導致與散熱器相接觸貼合時會有一間隙而仍然存在熱阻問題,使得裸晶的熱量無法被散熱器迅速帶離,造成散熱效能的提升也非常有限。 以上所述,習知具有下列之缺點: 1.嚴重的熱阻問題; 2.散熱效能較差。 是以,要如何解決上述習用之問題與缺失,即為本案之發明人與從事此行業之相關廠商所亟欲研究改善之方向所在者。 The semiconductor integrated circuit industry has experienced rapid growth. The technological progress in semiconductor integrated circuit materials and design has produced multiple generations of semiconductor integrated circuits. Each generation of semiconductor integrated circuits is smaller and smaller than the previous generation of semiconductor integrated circuits. More complex circuits, however, these advances have also increased the complexity of processing and manufacturing semiconductor integrated circuits. The traditional chip system includes die and package shell. Usually the die and package shell are combined by indium welding or other bonding methods. However, this structural design will cause the interface between the die and the package shell to be heated. The resistance is very large. Therefore, in recent years, with the increase of power and heat flow density, in order to effectively improve the heat dissipation efficiency of the chip, the chip factory has eliminated the package shell components that cover the chip in the design, and wants to reduce the package shell material The thermal resistance of the main body and the thermal resistance of the interface material have become the design mode of the structure of the bare crystal, thermal paste and heat sink. However, due to the flatness of the bare silicon material of this design, the weight of the heat sink, and the fastening force The requirements are relatively high. When the die is working at a high temperature, it will deform, making the surface of the die appear a slightly concave curved shape, resulting in a gap when it is in contact with the heat sink and there is still a thermal resistance problem, which makes the die The heat cannot be quickly taken away by the radiator, resulting in a very limited improvement in heat dissipation efficiency. As mentioned above, conventional knowledge has the following shortcomings: 1. Serious thermal resistance problem; 2. Poor heat dissipation efficiency. Therefore, how to solve the above-mentioned conventional problems and deficiencies is the direction that the inventor of this case and the related manufacturers engaged in this industry urgently want to study and improve.
爰此,為有效解決上述之問題,本發明之主要目的在於提供一種大幅減少熱阻問題之裸晶的散熱結構。
本發明之次要目的,在於提供一種大幅提升散熱效能之裸晶的散熱結構。
為達上述目的,本發明係提供一種裸晶的散熱結構,係包括一散熱單元及一裸晶,該散熱單元具有一第一側及一第二側,於該第二側凸設形成一接觸部(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部一端係呈一微凸曲面態樣,該裸晶具有一上表面及一下表面,所述接觸部一端與該上表面相接觸貼合,並該上表面係呈一微凹曲面態樣以與所述接觸部之微凸曲面態樣相匹配。
透過本發明此結構的設計,當該裸晶開始工作時會產生熱量,使得該裸晶在高溫狀態下其上表面會產生形變而呈現一微凹曲面態樣,藉由該散熱單元的接觸部一端之結構係呈一微凸曲面態樣,令該裸晶的上表面得以完全與該接觸部相接觸貼附結合,有效降低熱阻問題,進而達到該裸晶上的熱量可迅速被該散熱單元帶離,大幅提升散熱效能。
Therefore, in order to effectively solve the above-mentioned problems, the main purpose of the present invention is to provide a heat dissipation structure for bare crystals that greatly reduces the thermal resistance problem.
The secondary objective of the present invention is to provide a heat dissipation structure of a bare die with greatly improved heat dissipation efficiency.
To achieve the above objective, the present invention provides a heat dissipation structure of a bare die, which includes a heat dissipation unit and a bare die. The heat dissipation unit has a first side and a second side, and a contact is protrudingly formed on the second side. Portion (ie, the
本發明之上述目的及其結構與功能上的特性,將依據所附圖式之較佳實施例予以說明。
請參閱第1、2圖,係為本發明之裸晶的散熱結構之分解圖及放大示意圖,如圖所示,一種裸晶的散熱結構,係包括一散熱單元2及一裸晶3,該散熱單元2係為一散熱器、散熱基座、均溫板等具散熱之元件,其具有一第一側20及一第二側21,於該第一側20上形成有複數散熱鰭片200,於該第二側21凸設形成一接觸部210(即,接觸部210形成於散熱單元第二側21凸出處的表面上),該接觸部210一端係呈一微凸曲面態樣,於本實施例中,所述接觸部210與所述散熱單元2係以一體成形做說明,但並不限於此,使用者也可依照使用需求令該接觸部210及該散熱單元2為非一體成形,並且該接觸部210與該散熱單元2係選擇由銀、銅、鋁、鐵或其他高導熱材料所製成,該接觸部210與該散熱單元2可以是相同材質或不同材質,合先敘明。
所述裸晶3具有一上表面30及一下表面31,所述接觸部210一端與該上表面30相接觸貼合,並該上表面30係呈一微凹曲面態樣而得以與所述接觸部210之微凸曲面態樣相匹配,該下表面31則對應裝設於一基板4上。
續請參閱第2圖,本發明之散熱單元2及裸晶3的接觸面之間更形成有一微間隙(圖中未示),該微間隙對應塗佈設置一導熱塗層32,該導熱塗層32係為一導熱膏(Thermal grease)、導熱膠、導熱pad,而該導熱塗層32係用以更緊密填滿該微間隙以為了避免形成前述微間隙的產生而導致熱阻的產生。
因此,透過本發明此結構的設計,當該裸晶3開始工作時會產生熱量使得該裸晶3逐漸升溫,而由於裸晶3本身的材質及其製造過程等因素,會使該裸晶3在高溫狀態下產生形變,即,該裸晶3上表面30的中央處產生形變逐漸下凹而呈現一微凹曲面態樣,此時,透過該散熱單元2的接觸部210一端之結構係呈一微凸曲面態樣,而微凸曲面態樣與微凹曲面態樣的形狀係完全相匹配,得以令該接觸部210與該裸晶3的上表面30完全相接觸貼附,如此一來,可改善習知散熱單元的接觸界面呈平面狀與形變後的裸晶上表面之間相接觸貼合時產生的間隙而導致熱阻問題,本發明有效改善習知結構的熱阻問題,進而達到該裸晶3上的熱量可被該散熱單元2迅速帶離,大幅提升散熱效能。
需注意的是,由於該裸晶3上表面30所產生的形變(微凹曲面態樣)非常微小,其形變量通常以微米(
㎛)為單位量級,因此形變的彎曲弧度係介於50
㎛~70
㎛,而本發明所表示之圖式係以放大數倍進行說明,如此得以更加清楚明瞭本發明之結構設計,該散熱單元2接觸部210的微凸曲面態樣之彎曲弧度也是相當微小,另外,由於為微米(
㎛)量級的彎曲弧度,故該散熱單元2之第二側21係通常選擇利用研磨加工方式令該接觸部210呈一微凸曲面態樣,然而,微凸曲面態樣的製造方式並不限於研磨加工,也可利用CNC加工、刨削加工或其他加工方式,合先敘明。
以上所述,本發明相較於習知具有下列優點:
1.大幅減少熱阻問題;
2.大幅提升散熱效能。
以上已將本發明做一詳細說明,惟以上所述者,僅為本發明之一較佳實施例而已,當不能限定本發明實施之範圍,即凡依本發明申請範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍。
The above-mentioned objects and structural and functional characteristics of the present invention will be described based on the preferred embodiments of the accompanying drawings. Please refer to Figures 1 and 2, which are an exploded view and an enlarged schematic view of the heat dissipation structure of the die of the present invention. As shown in the figure, a heat dissipation structure of a die includes a
2:散熱單元 20:第一側 200:散熱鰭片 21:第二側 210:接觸部 3:裸晶 30:上表面 31:下表面 32:導熱塗層 4:基板2: Cooling unit 20: First side 200: cooling fins 21: second side 210: Contact 3: bare die 30: upper surface 31: lower surface 32: Thermally conductive coating 4: substrate
第1圖係為本發明裸晶的散熱結構之分解圖; 第2圖係為本發明裸晶的散熱結構之放大示意圖。 Figure 1 is an exploded view of the heat dissipation structure of the die of the present invention; Figure 2 is an enlarged schematic diagram of the heat dissipation structure of the bare die of the present invention.
2:散熱單元 2: Cooling unit
20:第一側 20: First side
200:散熱鰭片 200: cooling fins
21:第二側 21: second side
210:接觸部 210: Contact
3:裸晶 3: bare die
30:上表面 30: upper surface
31:下表面 31: lower surface
4:基板 4: substrate
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109100176A TWI711135B (en) | 2020-01-03 | 2020-01-03 | Die heat dissipation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109100176A TWI711135B (en) | 2020-01-03 | 2020-01-03 | Die heat dissipation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI711135B true TWI711135B (en) | 2020-11-21 |
| TW202127610A TW202127610A (en) | 2021-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109100176A TWI711135B (en) | 2020-01-03 | 2020-01-03 | Die heat dissipation structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI711135B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM244581U (en) * | 2003-09-09 | 2004-09-21 | Via Tech Inc | Heat dissipating structure capable of protecting bare die package |
| TW200612810A (en) * | 2004-10-13 | 2006-04-16 | Mitac Int Corp | Heat radiator |
| US20190378810A1 (en) * | 2016-11-21 | 2019-12-12 | Mitsubishi Electric Corporation | Semiconductor device |
| TWM593131U (en) * | 2020-01-03 | 2020-04-01 | 大陸商深圳興奇宏科技有限公司 | Heat dissipation structure of bare crystal (die) |
-
2020
- 2020-01-03 TW TW109100176A patent/TWI711135B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM244581U (en) * | 2003-09-09 | 2004-09-21 | Via Tech Inc | Heat dissipating structure capable of protecting bare die package |
| TW200612810A (en) * | 2004-10-13 | 2006-04-16 | Mitac Int Corp | Heat radiator |
| US20190378810A1 (en) * | 2016-11-21 | 2019-12-12 | Mitsubishi Electric Corporation | Semiconductor device |
| TWM593131U (en) * | 2020-01-03 | 2020-04-01 | 大陸商深圳興奇宏科技有限公司 | Heat dissipation structure of bare crystal (die) |
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| Publication number | Publication date |
|---|---|
| TW202127610A (en) | 2021-07-16 |
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