TWI711132B - Epoxy resin composition - Google Patents
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- TWI711132B TWI711132B TW105139260A TW105139260A TWI711132B TW I711132 B TWI711132 B TW I711132B TW 105139260 A TW105139260 A TW 105139260A TW 105139260 A TW105139260 A TW 105139260A TW I711132 B TWI711132 B TW I711132B
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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Abstract
本發明提供可較好地作為三次元安裝用之底部填充材之鈾含量低、填充性優異且孔隙之發生受抑制之環氧樹脂組成物。本發明之環氧樹脂組成物係含有(A)液狀環氧樹脂、(B)硬化劑、(C)氧化鋁填充劑之環氧樹脂組成物,其特徵為前述(C)氧化鋁填充劑之平均粒徑為0.1~4.9μm,且鈾含量為0.1~9ppb。 The present invention provides an epoxy resin composition that can be used as an underfill material for three-dimensional installation, which has low uranium content, excellent filling properties and suppressed pore generation. The epoxy resin composition of the present invention is an epoxy resin composition containing (A) liquid epoxy resin, (B) hardener, (C) alumina filler, and is characterized by the aforementioned (C) alumina filler The average particle size is 0.1~4.9μm, and the uranium content is 0.1~9ppb.
Description
本發明有關可作為半導體密封材或接著劑使用之環氧樹脂組成物。 The present invention relates to epoxy resin compositions that can be used as semiconductor sealing materials or adhesives.
隨著電子機器之小型化、輕量化、高性能化而使半導體之安裝形態自金屬線黏合型變化為覆晶型。 With the miniaturization, lighter weight, and higher performance of electronic equipment, the mounting form of semiconductors has changed from wire bonding type to flip chip type.
覆晶型之半導體裝置具有透過凸塊電極使基板上之電極部與半導體元件連接之構造。該構造之半導體裝置於熱循環等之施加附加熱時,因環氧樹脂等之有機材料製之基板與半導體元件之熱膨脹係數差而對凸塊電極施加應力,而於凸塊電極發生龜裂等之缺陷而成為問題。為了抑制該缺陷發生,已廣泛進行藉由使用稱為底部填充材之液狀半導體密封材,密封半導體元件與基板之間之間隙,使兩者相互固定,而提高耐熱循環性。 The flip-chip semiconductor device has a structure in which the electrode on the substrate and the semiconductor element are connected through bump electrodes. When additional heat is applied to the semiconductor device of this structure during thermal cycles, etc., due to the difference in thermal expansion coefficient between the substrate made of organic materials such as epoxy resin and the semiconductor element, stress is applied to the bump electrode, and cracks occur in the bump electrode. The defect becomes a problem. In order to suppress the occurrence of this defect, it has been widely used to seal the gap between the semiconductor element and the substrate by using a liquid semiconductor sealing material called an underfill material to fix the two to each other to improve the heat cycle resistance.
作為底部填充材之供給方法,一般為將半導體元件與基板上之電極部連接後,沿著半導體元件外周塗佈底部填充材(佈膠),利用毛細管現象,於兩者之間隙注 入底部填充材之毛細管流動。底部填充材注入後,藉由使該底部填充材加熱硬化而補強兩者之連接部位。 As the supply method of underfill material, generally after connecting the semiconductor element and the electrode part on the substrate, the underfill material (cloth glue) is applied along the outer periphery of the semiconductor element, and the capillary phenomenon is used to inject the gap between the two. Flow into the capillary of the underfill material. After the underfill material is injected, the underfill material is heated and hardened to strengthen the connection between the two.
底部填充材要求注入性、接著性、硬化性、保存安定性等優異。且,藉底部填充材密封之部位要求耐濕性、耐熱循環性等優異。 The underfill material is required to be excellent in injectability, adhesiveness, curability, storage stability, etc. In addition, the parts sealed with the underfill material are required to be excellent in moisture resistance and heat cycle resistance.
為了滿足上述要求,作為底部填充材已廣泛使用以環氧樹脂為主劑者。 In order to meet the above requirements, epoxy resins have been widely used as underfill materials.
為了提高藉由底部填充材密封之部位的耐濕性及耐熱循環性尤其是耐熱循環性,已知藉由於底部填充材中添加由無機物質所成之填充材(以下稱為「無機填充材」),進行環氧樹脂等之有機材料製之基板與半導體元件之熱膨脹係數差之控制,或補強凸塊電極較為有效(參考專利文獻1)。 In order to improve the moisture resistance and heat cycle resistance of the part sealed by the underfill material, especially the heat cycle resistance, it is known to add a filler made of an inorganic substance to the underfill material (hereinafter referred to as "inorganic filler"). ), it is effective to control the difference in thermal expansion coefficient between a substrate made of an organic material such as epoxy resin and a semiconductor element, or to reinforce bump electrodes (refer to Patent Document 1).
作為基於該目的添加之無機填充材,基於電絕緣性高及熱膨脹係數低,較好使用氧化矽填充劑。 As an inorganic filler added for this purpose, a silica filler is preferably used because of high electrical insulation and low thermal expansion coefficient.
另一方面,為了實現高密度.高機能安裝,已自通常之平面配置之二次元安裝轉變為重疊零件進行安裝之三次元安裝。作為三次元安裝,舉例為使用層合裸晶片之三次元封裝(例如堆疊型CSP)者,或使用將半導體晶片暫時以獨立板封裝後,將該等重疊複數個而實現三次元化之封裝層合三次元模組者。再者,亦有安裝電子零件(半導體晶片、被動零件等)使配線基板多段化,而實現高密度.高機能安裝之技術。 On the other hand, in order to achieve high density. High-performance installation has changed from the two-dimensional installation of the usual plane configuration to the three-dimensional installation of overlapping parts for installation. As a three-dimensional mounting, for example, a three-dimensional package (such as a stacked CSP) using a laminated bare chip, or a package layer where a semiconductor chip is temporarily packaged in a separate board and then stacked in plural to achieve three-dimensionalization Combine the three-dimensional module. Moreover, there are also electronic components (semiconductor chips, passive components, etc.) installed to multi-segment wiring boards to achieve high density. High-performance installation technology.
以往之二次元安裝中由於晶片露出,故自晶 片之發熱的散熱不成為問題,但層合複數晶片之構造的三次元安裝由於不易散熱故熱設計成為較大問題。為了容易進行熱設計,較好使用底部填充材之熱傳導率較高者。 In the past two-dimensional installation, because the chip is exposed, the self-crystal The heat dissipation of the chip is not a problem, but the three-dimensional installation of the structure of laminated multiple chips is not easy to dissipate heat, so the thermal design becomes a major problem. In order to facilitate thermal design, it is better to use the underfill material with higher thermal conductivity.
作為無機填充材而廣泛使用之氧化矽填充劑熱傳導率絕對不高。因此,三次元安裝所用之底部填充材較好使用熱傳導率高於氧化矽填充劑之無機填充材。作為熱傳導率高於氧化矽填充劑之無機填充材舉例為氧化鋁填充劑、或氧化鎂、氮化硼、氮化鋁、金剛石等之填充劑。該等中,氧化鋁填充劑因低成本,且易提高真球度,且耐濕性優異故較佳。 The thermal conductivity of silica filler, which is widely used as an inorganic filler, is definitely not high. Therefore, it is better to use inorganic fillers with higher thermal conductivity than silica fillers for underfill materials used for three-dimensional installation. Examples of inorganic fillers with higher thermal conductivity than silica fillers include alumina fillers, or fillers such as magnesium oxide, boron nitride, aluminum nitride, and diamond. Among them, the alumina filler is preferred because of its low cost, easy improvement of sphericity, and excellent moisture resistance.
又,為了防止容易受α線影響之裝置之誤動作,有必要減低自底部填充材所含之無機填充材中之鈾、釭、其壞變物質所放出之α線(專利文獻2~4)。氧化鋁填充劑係上述例示之熱傳導率高於氧化矽填充劑之無機填充材中,α線之釋出量較少,但仍要求進一步減低α線之釋出量。 In addition, in order to prevent malfunctions of devices that are susceptible to the alpha line, it is necessary to reduce the alpha lines emitted from the uranium, nightmare, and degraded substances contained in the inorganic filler contained in the underfill material (Patent Documents 2 to 4). Alumina filler is the above-exemplified inorganic filler whose thermal conductivity is higher than that of silica filler. The amount of alpha ray released is relatively small, but it is still required to further reduce the amount of alpha ray released.
專利文獻2~4中,作為原料使用之氫氧化鋁粉末中,或由氫氧化鋁粉末製造之氧化鋁填充劑中之鈾、釭之合計量設為未達10ppb。 In Patent Documents 2 to 4, the total amount of uranium and nightma in aluminum hydroxide powder used as a raw material or in an alumina filler made from aluminum hydroxide powder is less than 10 ppb.
然而,由專利文獻2~4所得之以往氧化鋁填充劑,由於藉由雷射繞射散射法所得之平均粒徑D50為2μm以上而較大,故添加於三次元安裝所用之底部填充材時,由於該底部填充材之填充性低,故填充時易發生孔隙。 However, the conventional alumina fillers obtained from Patent Documents 2 to 4 have a large average particle size D50 of 2 μm or more by the laser diffraction scattering method, so when they are added to the underfill material for three-dimensional mounting Because of the low filling properties of the underfill material, pores are prone to occur during filling.
[專利文獻1]日本特開平10-173103號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 10-173103
[專利文獻2]日本特開2005-248087號公報 [Patent Document 2] JP 2005-248087 A
[專利文獻3]日本特開2014-5359號公報 [Patent Document 3] JP 2014-5359 A
[專利文獻4]日本特開2011-236118號公報 [Patent Document 4] JP 2011-236118 A
本發明係為了解決上述先前技術之問題點,目的在於提供鈾含量低,作為三次元安裝用之底部填充材使用時,該底部填充材之填充性優異且孔隙之發生受抑制之環氧樹脂組成物。 The present invention is to solve the above-mentioned problems of the prior art, and aims to provide an epoxy resin composition with low uranium content, and when used as an underfill material for three-dimensional installation, the underfill material has excellent filling properties and suppresses the occurrence of pores Things.
為達成上述目的,本發明提供一種環氧樹脂組成物,其係含有(A)液狀環氧樹脂、(B)硬化劑、(C)氧化鋁填充劑之環氧樹脂組成物,其特徵前述(C)氧化鋁填充劑之平均粒徑為0.1~4.9μm,且鈾含量為0.1~9ppb。 In order to achieve the above-mentioned object, the present invention provides an epoxy resin composition containing (A) liquid epoxy resin, (B) hardener, and (C) alumina filler, the characteristics of which are described above (C) The average particle size of the alumina filler is 0.1~4.9μm, and the uranium content is 0.1~9ppb.
本發明之環氧樹脂組成物中,較好前述(B)硬化劑為芳香族胺硬化劑。 In the epoxy resin composition of the present invention, the curing agent (B) is preferably an aromatic amine curing agent.
本發明之環氧樹脂組成物中,較好芳香族胺硬化劑之含量係相對於前述(A)液狀環氧樹脂之環氧當量為0.5~1.5當量。 In the epoxy resin composition of the present invention, the content of the aromatic amine hardener is preferably 0.5 to 1.5 equivalents relative to the epoxy equivalent of the liquid epoxy resin (A).
本發明之環氧樹脂組成物中,較好前述(C)氧化鋁填充劑之含量係相對於環氧樹脂組成物之全部成分之合計質量100質量份為45~90質量份。 In the epoxy resin composition of the present invention, the content of the aforementioned (C) alumina filler is preferably 45 to 90 parts by mass relative to 100 parts by mass of the total mass of all components of the epoxy resin composition.
本發明之環氧樹脂組成物較好硬化物中之α線量為0.0020count/cm2.h以下。 The epoxy resin composition of the present invention preferably has an alpha line amount of 0.0020count/cm 2 in the hardened substance. h or less.
本發明之環氧樹脂組成物亦可進而含有(D)矽烷偶合劑。 The epoxy resin composition of the present invention may further contain (D) a silane coupling agent.
本發明之環氧樹脂組成物較好前述(C)氧化鋁填充劑之真圓度為0.9以上。 The epoxy resin composition of the present invention preferably has a roundness of 0.9 or more of the aforementioned (C) alumina filler.
又,本發明提供一種半導體密封劑,其含有本發明之環氧樹脂組成物。 Furthermore, the present invention provides a semiconductor sealing agent containing the epoxy resin composition of the present invention.
又,本發明提供一種接著劑,其含有本發明之環氧樹脂組成物。 In addition, the present invention provides an adhesive containing the epoxy resin composition of the present invention.
又,本發明提供一種樹脂硬化物,其係使本發明之環氧樹脂組成物加熱而得。 In addition, the present invention provides a resin cured product obtained by heating the epoxy resin composition of the present invention.
又,本發明提供一種半導體裝置,其具有使用本發明之半導體密封材密封之覆晶型半導體元件。 Moreover, the present invention provides a semiconductor device having a flip-chip semiconductor element sealed with the semiconductor sealing material of the present invention.
本發明之環氧樹脂組成物係使用氧化鋁填充劑作為無機填充材,故作為三次元安裝之底部填充材使用時,熱設計容易。 The epoxy resin composition of the present invention uses alumina filler as an inorganic filler, so when it is used as an underfill material for three-dimensional installation, thermal design is easy.
本發明之環氧樹脂組成物,由於使用鈾含量為0.1~9ppb之氧化鋁填充劑作為無機填充材,故其硬化物中之α 線量低如0.0020count/cm2.h以下,於作為底部填充材使用時,可防止容易受到α線影響之裝置之誤動作。 Since the epoxy resin composition of the present invention uses alumina filler with a uranium content of 0.1-9 ppb as an inorganic filler, the amount of alpha line in the hardened substance is as low as 0.0020count/cm 2 . Below h, when used as an underfill material, it can prevent malfunction of devices that are susceptible to alpha rays.
本發明之環氧樹脂組成物係使用平均粒徑為0.1~4.9μm之氧化鋁填充劑作為無機填充材,故作為三次元安裝之底部填充材使用時,填充性良好,且抑制孔隙之發生。 The epoxy resin composition of the present invention uses an alumina filler with an average particle size of 0.1-4.9 μm as an inorganic filler, so when used as an underfill material for three-dimensional mounting, it has good filling properties and suppresses the occurrence of voids.
以下針對本發明詳細說明。 The following describes the present invention in detail.
本發明之環氧樹脂組成物含有以下所示之(A)~(C)成分作為必要成分。 The epoxy resin composition of the present invention contains the components (A) to (C) shown below as essential components.
(A)成分之液狀環氧樹脂係成為本發明之環氧樹脂組成物之主劑的成分。 (A) The liquid epoxy resin of component is a component which becomes the main agent of the epoxy resin composition of this invention.
本發明中所謂液狀環氧樹脂意指於常溫液狀之環氧樹脂。 The liquid epoxy resin in the present invention means an epoxy resin that is liquid at room temperature.
作為本發明之液狀環氧樹脂例示有雙酚A型環氧樹脂之平均分子量約400以下者;如對-縮水甘油氧基苯基二甲基參雙酚A二縮水甘油醚之分支狀多官能雙酚A型環氧樹脂;雙酚F型環氧樹脂;酚酚醛清漆型環氧樹脂之平均分子量約570以下者;如乙烯基(3,4-環己烯)二氧化物、3,4-環氧基環己基羧酸(3,4-環氧基環己基)甲酯、己二酸雙(3,4-環氧基-6-甲基環己基甲基)酯、2-(3,4-環氧基環 己基)5,1-螺(3,4-環氧基環己基)-間-二噁烷之脂環式環氧樹脂;如3,3’,5,5’-四甲基-4,4’-二縮水甘油氧基聯苯之聯苯型環氧樹脂;如六氫鄰苯二甲酸二縮水甘油酯、3-甲基六氫鄰苯二甲酸二縮水甘油酯、六氫對苯二甲酸二縮水甘油酯之縮水甘油酯型環氧樹脂;如二縮水甘油基苯胺、二縮水甘油基甲苯胺、三縮水甘油基-對-胺基酚、四縮水甘油基-間-二甲苯二胺、四縮水甘油基雙(胺基甲基)環己烷之縮水甘油基胺型環氧樹脂;以及1,3-二縮水甘油基-5-甲基-5-乙基乙內醯脲之乙內醯脲型環氧樹脂;含萘環之環氧樹脂。且亦可使用如1,3-雙(3-縮水甘油氧基丙基)-1,1,3,3-四甲基二矽氧烷之具有聚矽氧骨架之環氧樹脂。再者,亦例示有如(聚)乙二醇二縮水甘油醚、(聚)丙二醇二縮水甘油醚、丁二醇二縮水甘油醚、新戊二醇二縮水甘油醚、環己烷二甲醇二縮水甘油醚之二環氧化合物;如三羥甲基丙烷三縮水甘油醚、甘油三縮水甘油醚之三環氧化物化合物等。 The liquid epoxy resin of the present invention is exemplified by bisphenol A type epoxy resins with an average molecular weight of about 400 or less; for example, p-glycidoxyphenyl dimethyl ginseng bisphenol A diglycidyl ether has many branches Functional bisphenol A epoxy resin; bisphenol F epoxy resin; phenol novolac epoxy resin with an average molecular weight of about 570 or less; such as vinyl (3,4-cyclohexene) dioxide, 3, 4-Epoxycyclohexylcarboxylic acid (3,4-epoxycyclohexyl) methyl ester, bis(3,4-epoxy-6-methylcyclohexylmethyl) adipate, 2-( 3,4-epoxy ring Hexyl) 5,1-spiro (3,4-epoxycyclohexyl)-m-dioxane alicyclic epoxy resin; such as 3,3',5,5'-tetramethyl-4,4 '-Diglycidyloxybiphenyl biphenyl type epoxy resin; such as diglycidyl hexahydrophthalate, diglycidyl 3-methylhexahydrophthalate, and hexahydroterephthalic acid Diglycidyl glycidyl ester type epoxy resin; such as diglycidyl aniline, diglycidyl toluidine, triglycidyl-p-aminophenol, tetraglycidyl-m-xylene diamine, Tetraglycidyl bis (aminomethyl) cyclohexane glycidyl amine epoxy resin; and 1,3-diglycidyl-5-methyl-5-ethylhydantoin Urea type epoxy resin; epoxy resin containing naphthalene ring. In addition, epoxy resins with polysiloxane skeletons such as 1,3-bis(3-glycidoxypropyl)-1,1,3,3-tetramethyldisiloxane can also be used. Furthermore, (poly)ethylene glycol diglycidyl ether, (poly)propylene glycol diglycidyl ether, butanediol diglycidyl ether, neopentyl glycol diglycidyl ether, cyclohexane dimethanol diglycidyl ether are also exemplified. Diepoxy compounds of glycerol ether; such as trimethylolpropane triglycidyl ether, triepoxide compounds of glycerol triglycidyl ether, etc.
其中較好為液狀雙酚型環氧樹脂、液狀胺基酚型環氧樹脂、聚矽氧改性環氧樹脂、萘型環氧樹脂。又更好為液狀雙酚A型環氧樹脂、液狀雙酚F型環氧樹脂、對-胺基酚型液狀環氧樹脂、1,3-雙(3-縮水甘油氧基丙基)四甲基二矽氧烷、萘型環氧樹脂。 Among them, a liquid bisphenol type epoxy resin, a liquid aminophenol type epoxy resin, a silicone modified epoxy resin, and a naphthalene type epoxy resin are preferable. More preferably, liquid bisphenol A type epoxy resin, liquid bisphenol F type epoxy resin, p-aminophenol type liquid epoxy resin, 1,3-bis(3-glycidoxypropyl) ) Tetramethyldisiloxane, naphthalene type epoxy resin.
作為(A)成分之液狀環氧樹脂可單獨使用亦可併用2種以上。 (A) The liquid epoxy resin as a component may be used individually or may use 2 or more types together.
且,即使常溫為固體之環氧樹脂,於藉由併用液狀環 氧樹脂,而作為混合物顯示液狀之情況亦可使用。 Moreover, even if the epoxy resin is solid at room temperature, by using a liquid ring Oxygen resin can also be used when the mixture is liquid.
(B)成分之硬化劑若為環氧樹脂之硬化劑則未特別限制,可使用習知者,可使用胺系硬化劑、酸酐系硬化劑及酚系硬化劑之任一者。 (B) If the hardener of component (B) is an epoxy resin hardener, it is not particularly limited, and conventional ones can be used, and any one of amine hardeners, acid anhydride hardeners, and phenol hardeners can be used.
作為胺系硬化劑之具體例舉例為三伸乙基四胺、四伸乙基五胺、間-二甲苯二胺、三甲基六亞甲基二胺、2-甲基五亞甲基二胺等之脂肪族聚胺,如異佛酮二胺、1,3-雙胺基甲基環己烷、雙(4-胺基環己基)甲烷、降冰片烯二胺、1,2-二胺基環己烷等之脂環式聚胺,N-胺基乙基哌啶、1,4-雙(2-胺基-2-甲基丙基)哌啶等之哌啶型之聚胺,二乙基甲苯二胺、二甲基硫代甲苯二胺、4,4’-二胺基-3,3’-二乙基二苯基甲烷、雙(甲硫基)甲苯二胺、二胺基二苯基甲烷、間-伸苯二胺、二胺基二苯基碸、二乙基甲苯二胺、三亞甲基雙(4-胺基苯甲酸酯)、聚四亞甲基氧化物-二-對-胺基苯甲酸酯等之芳香族聚胺類。且作為市售品,舉例為T-12(商品名,三洋化成工業製)(胺基當量116)。 Specific examples of amine hardeners are triethylenetetramine, tetraethylenepentamine, m-xylene diamine, trimethylhexamethylene diamine, 2-methylpentamethylene diamine Aliphatic polyamines such as amines, such as isophorone diamine, 1,3-diaminomethylcyclohexane, bis(4-aminocyclohexyl)methane, norbornene diamine, 1,2-diamine Alicyclic polyamines such as aminocyclohexane, piperidine-type polyamines such as N-aminoethylpiperidine, 1,4-bis(2-amino-2-methylpropyl)piperidine, etc. , Diethyltoluenediamine, dimethylthiotoluenediamine, 4,4'-diamino-3,3'-diethyldiphenylmethane, bis(methylthio)toluenediamine, two Amino diphenylmethane, meta-phenylene diamine, diamino diphenyl sulfide, diethyl toluene diamine, trimethylene bis (4-amino benzoate), polytetramethylene oxide Aromatic polyamines such as bis-p-aminobenzoate. In addition, as a commercially available product, T-12 (trade name, manufactured by Sanyo Chemical Industry Co., Ltd.) (amine equivalent 116) is exemplified.
作為酸酐系硬化劑之具體例舉例為甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等之烷基化四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、甲基腐植酸酐、經烯基取代之琥珀酸酐、甲基納迪克酸酐、戊二酸酐等。 Specific examples of acid anhydride hardeners include methyl tetrahydrophthalic anhydride, methyl hexahydrophthalic anhydride, methyl tetrahydrophthalic anhydride, etc. alkylated tetrahydrophthalic acid Acid anhydride, hexahydrophthalic anhydride, methyl humic anhydride, alkenyl substituted succinic anhydride, methyl nadic anhydride, glutaric anhydride, etc.
作為酚系硬化劑之具體例係指具有酚性羥基之單體、寡聚物、聚合物全部,舉例為例如酚酚醛清漆樹脂及其烷基化物或烯丙基化物、甲酚酚醛清漆樹脂、酚芳烷基(包含伸苯基、伸聯苯基骨架)樹脂、萘酚芳烷基樹脂、三酚甲烷樹脂、二環戊二烯型酚樹脂等。 Specific examples of phenolic hardeners refer to all monomers, oligomers, and polymers having phenolic hydroxyl groups, and examples include phenol novolac resins and their alkyl or allyl compounds, cresol novolac resins, Phenol aralkyl (including phenylene and biphenyl skeleton) resin, naphthol aralkyl resin, trisphenol methane resin, dicyclopentadiene type phenol resin, etc.
該等中,胺系硬化劑由於耐濕性及耐熱循環性優異故而較佳,其中二乙基甲苯二胺、二甲基硫代甲苯二胺、4,4’-二胺基-3,3’-二乙基二苯基甲烷等之芳香族胺硬化劑,基於耐熱性、機械特性、密著性、電性特性、耐濕性等之觀點而言較佳。且常溫呈液狀之方面,亦較好作為本發明之環氧樹脂組成物中之環氧樹脂之硬化劑。 Among them, amine hardeners are preferred due to their excellent moisture resistance and heat cycle resistance. Among them, diethyltoluenediamine, dimethylthiotoluenediamine, 4,4'-diamino-3,3 Aromatic amine hardeners such as'-diethyldiphenylmethane are preferable from the viewpoints of heat resistance, mechanical properties, adhesion, electrical properties, and moisture resistance. In addition, since it is liquid at room temperature, it is also preferable as a curing agent for the epoxy resin in the epoxy resin composition of the present invention.
(B)成分之硬化劑可單獨使用,亦可併用2種以上。 (B) The hardener of the component may be used alone or in combination of two or more kinds.
本發明之樹脂組成物中,(B)成分之硬化劑之調配比例並未特別限制,但芳香族胺硬化劑時,相對於(A)成分之液狀環氧樹脂之環氧基1當量,較好為0.5~1.5當量,更好為0.7~1.3當量。 In the resin composition of the present invention, the mixing ratio of the curing agent of the component (B) is not particularly limited, but in the case of an aromatic amine curing agent, it is equivalent to 1 equivalent of the epoxy group of the liquid epoxy resin of the component (A). It is preferably 0.5 to 1.5 equivalents, more preferably 0.7 to 1.3 equivalents.
(C)成分之氧化鋁填充劑於將本發明之環氧樹脂組成物作為底部填充材使用時,以提高密封部位之耐濕性及耐熱循環性,尤其是耐熱循環性之目的而添加。藉由添加氧化鋁填充劑而提高耐熱循環性之理由係藉由降低線膨脹係數而可抑制因熱循環所致之環氧樹脂組成物之硬化物之膨 脹.收縮。 When using the epoxy resin composition of the present invention as an underfill material, the alumina filler of component (C) is added for the purpose of improving the moisture resistance and heat cycle resistance of the sealing part, especially the heat cycle resistance. The reason why the heat cycle resistance is improved by adding alumina filler is that by reducing the coefficient of linear expansion, the swelling of the hardened epoxy resin composition caused by thermal cycling can be suppressed. Expansion. Contraction.
使用氧化鋁填充劑作為(C)成分之理由係如上述與氧化矽填充劑相比,由於熱傳導率高,故作為三次元安裝所用之底部填充材使用時,熱設計變容易。又,對於上述例示之熱傳導率高於氧化矽填充劑之無機填充材,因係低成本,易於提高真球度,且耐濕性優異之故。 The reason for using the alumina filler as the component (C) is that the thermal conductivity is higher than that of the silica filler as described above, so when it is used as an underfill material for three-dimensional mounting, the thermal design becomes easier. In addition, the above-exemplified inorganic fillers with higher thermal conductivity than silica fillers are low-cost, easy to improve sphericity, and are excellent in moisture resistance.
又為了防止易受α線影響之裝置之誤動作,必須減低自底部填充材中所含之無機填充材中之鈾、釷、其壞變物質釋出之α線(專利文獻2~4)。 In addition, in order to prevent the malfunction of devices that are susceptible to the alpha line, it is necessary to reduce the alpha line released from the uranium, thorium, and its degrading substances in the inorganic filler contained in the underfill material (Patent Documents 2 to 4).
本發明之環氧樹脂組成物中,(C)成分之氧化鋁填充劑之平均粒徑為0.1~4.9μm。其理由為作為三次元安裝所用之底部填充材使用時,填充性優異且可抑制孔隙之發生。(C)成分之氧化鋁填充劑之平均粒徑未達0.1μm時,環氧樹脂組成物之黏度變非常高,故作為三次元安裝所用之底部填充材使用時,填充性、作業性惡化。 In the epoxy resin composition of the present invention, the average particle size of the alumina filler of the component (C) is 0.1 to 4.9 μm. The reason is that when used as an underfill material for three-dimensional mounting, it has excellent filling properties and can suppress the occurrence of voids. When the average particle size of the alumina filler of component (C) is less than 0.1μm, the viscosity of the epoxy resin composition becomes very high, so when used as an underfill material for three-dimensional mounting, the filling and workability deteriorate.
另一方面,(C)成分之氧化鋁填充劑之平均粒徑超過4.9μm時,作為三次元安裝所用之底部填充材使用時,大的粒子會阻塞於間隙間而有發生填充不良之虞。且即使可填充易由於填充時夾帶入孔隙故而不適當。 On the other hand, when the average particle size of the alumina filler of the component (C) exceeds 4.9 μm, when it is used as an underfill material for three-dimensional mounting, large particles may block the gaps and may cause poor filling. And even if it can be filled, it is not suitable because it is entrained into the pores during filling.
(C)成分之氧化鋁填充劑之平均粒徑更好為0.1~3.0μm,又更好為0.1~1.7μm。 The average particle diameter of the alumina filler of the component (C) is more preferably 0.1 to 3.0 μm, and more preferably 0.1 to 1.7 μm.
(C)成分之氧化鋁填充劑之形狀並未特別限定,可為粒狀、粉末狀、鱗片狀等之任一種形態。又,氧化鋁填充劑之形狀為粒狀以外時,所謂氧化鋁填充劑之平 均粒徑意指氧化鋁填充劑之平均最大徑。 (C) The shape of the alumina filler of the component is not particularly limited, and it may be in any form such as granular, powder, and scale. In addition, when the shape of the alumina filler is other than granular, the so-called flat alumina filler The average particle size means the average maximum diameter of the alumina filler.
但,(C)成分之氧化鋁填充劑之真圓度為0.9以上時,基於於環氧樹脂組成物中之氧化鋁填充劑之分散性及作為三次元安裝用之底部填充材使用時之注入性提高,並且氧化鋁填充劑更接近最密填充狀態之觀點係較佳。本說明書中之「真圓度」係定義為以掃描型電子顯微鏡(SEM)觀察之二次元圖像中之「粒子之最小徑對於最大徑之比」。亦即係指以掃描型電子顯微鏡(SEM)觀察之二次元圖像中之最小徑對於最大徑之比為0.9以上。 However, when the roundness of the alumina filler of component (C) is 0.9 or more, it is based on the dispersibility of the alumina filler in the epoxy resin composition and the injection when used as an underfill material for three-dimensional installation It is better to improve the performance and the alumina filler is closer to the densest filling state. The "roundness" in this manual is defined as the "ratio of the smallest diameter to the largest diameter of a particle" in the two-dimensional image observed with a scanning electron microscope (SEM). It means that the ratio of the smallest diameter to the largest diameter in the two-dimensional image observed with a scanning electron microscope (SEM) is 0.9 or more.
如上述,與氧化矽填充劑相比,氧化鋁填充劑由於熱傳導率較高,故作為三次元安裝所用之底部填充材使用時,熱設計變容易。 As mentioned above, compared with silica fillers, alumina fillers have higher thermal conductivity, so when used as underfill materials for three-dimensional mounting, thermal design becomes easier.
然而,氧化鋁填充劑由於其製造原料的填充部位含有鈾作為不可避免之雜質,於製造之氧化鋁填充劑亦具有作為不可避免雜質之鈾,故作為三次元安裝所用之底部填充材使用時,因自鈾釋出之α線而有使裝置誤動作之虞。 However, because alumina fillers contain uranium as an unavoidable impurity in the filling part of its manufacturing raw materials, the manufactured alumina filler also has uranium as an inevitable impurity, so when used as an underfill material for three-dimensional installation, There is a risk of the device malfunctioning due to the alpha line released from the uranium.
本發明之樹脂組成物由於(C)成分之氧化鋁填充劑之鈾含量為0.1~9ppb,故來自樹脂組成物之硬化物之α線量可減低至不使裝置誤動作之程度。具體而言,使來自樹脂組成物之硬化物之α線量減低至0.0020count/cm2.h以下。 In the resin composition of the present invention, since the uranium content of the alumina filler of the component (C) is 0.1-9 ppb, the amount of alpha rays from the hardened substance of the resin composition can be reduced to the extent that the device does not malfunction. Specifically, the amount of alpha rays from the cured product of the resin composition is reduced to 0.0020count/cm 2 . h or less.
本發明之樹脂組成物中,(C)成分之氧化鋁填充劑之鈾含量較好為0.1~4.9ppb以下。 In the resin composition of the present invention, the uranium content of the alumina filler of the component (C) is preferably 0.1 to 4.9 ppb or less.
依據專利文獻2~4中記載之方法,由氫氧化 鋁粉末可製造鈾、釷之合計量未達10ppb之氧化鋁填充劑,但該氧化鋁填充劑之藉由雷射繞射散射法所得之平均粒徑D50為2μm以上,無法製造平均粒徑為0.1~4.9μm之氧化鋁填充劑。 According to the methods described in Patent Documents 2 to 4, Aluminum powder can be used to produce alumina fillers whose total amount of uranium and thorium is less than 10ppb. However, the average particle size D50 of this alumina filler obtained by the laser diffraction scattering method is 2μm or more. Alumina filler of 0.1~4.9μm.
平均粒徑為0.1~4.9μm且鈾含量為0.1~9ppb之氧化鋁填充劑可藉由例如日本特開2002-285003號公報、日本特開2003-119019號公報、VMC法(Vapourized Metal Combution Method,蒸發金屬焚化方法)製造。所謂VMC法係於含氧之氛圍內藉由燃燒器形成化學火焰,於該化學火焰中將形成成為目的之氧化物微粒子(此處為氧化鋁填充劑,以下同)之一部分的金屬(此處為Al,以下同)粉末以形成粉塵雲之程度之量投入,引起爆燃而合成氧化物微粒子之方法。 Alumina fillers with an average particle size of 0.1 to 4.9 μm and a uranium content of 0.1 to 9 ppb can be obtained by, for example, Japanese Patent Application Publication No. 2002-285003, Japanese Patent Application Publication No. 2003-119019, VMC method (Vapourized Metal Combution Method, Evaporated metal incineration method) manufacturing. The so-called VMC method is to form a chemical flame by a burner in an oxygen-containing atmosphere, in which a part of the metal (here, alumina filler, the same below) will be formed as the target oxide particles It is Al, the same below) A method in which powder is injected in an amount that forms a dust cloud to cause deflagration to synthesize oxide particles.
若針對VMC法加以說明則如以下。首先於容器中充滿反應氣體的含氧之氣體,於該反應氣體中形成化學火焰。其次於該化學火焰中投入金屬粉末形成高濃度(500g/m3以上)之粉塵雲。接著,藉由化學火焰對金屬粉末表面賦予熱能,使金屬粉末之表面溫度上升,來自金屬粉末表面之金屬蒸氣擴散至周圍。該金屬蒸氣粉末與氧氣反應,起火發生火焰。因該火焰產生之熱進一步促進金屬粉末之氣化,產生之金屬蒸氣與反應氣體混合,連鎖地傳播起火。此時金屬粉末本身被破壞並分散,促進火焰傳播。藉由燃燒後生成之氣體自然冷卻,可成為氧化物微粒子之雲。所得之氧化物微粒子可藉由電性集塵器等帶電而 被捕獲。 If it is explained for the VMC method, it is as follows. First, the container is filled with oxygen-containing gas of reaction gas, and a chemical flame is formed in the reaction gas. Secondly, metal powder is thrown into the chemical flame to form a high-concentration (500g/m 3 or more) dust cloud. Then, the chemical flame imparts heat energy to the surface of the metal powder to increase the surface temperature of the metal powder, and the metal vapor from the surface of the metal powder diffuses to the surroundings. The metal vapor powder reacts with oxygen to cause fire and flame. The heat generated by the flame further promotes the vaporization of the metal powder, and the generated metal vapor is mixed with the reaction gas to spread the fire in a chain. At this time, the metal powder itself is destroyed and dispersed, promoting flame propagation. By natural cooling of the gas generated after combustion, it can become a cloud of oxide particles. The resulting oxide particles can be captured by charging with an electric dust collector or the like.
VMC法係利用粉塵爆發原理者,瞬間獲得大量之氧化物微粒子,該微粒子成為略真球之形狀。藉由調整所投入之粉末之粒徑、投入量、火焰溫度等,可調整微粒子之粒徑,可合成平均粒徑為0.1~4.9μm之氧化鋁填充劑。 The VMC system uses the principle of dust explosion to obtain a large number of oxide particles in an instant, and the particles become a slightly true spherical shape. The particle size of fine particles can be adjusted by adjusting the particle size, amount, flame temperature, etc. of the injected powder, and alumina filler with an average particle size of 0.1~4.9μm can be synthesized.
本發明之樹脂組成物中,(C)成分之氧化鋁填充劑之含量相對於樹脂組成物之全部成分之合計質量100質量份較好為45~90質量份。 In the resin composition of the present invention, the content of the alumina filler of the component (C) is preferably 45 to 90 parts by mass relative to 100 parts by mass of the total mass of all components of the resin composition.
(C)成分之氧化鋁填充劑之含量未達45質量份時,樹脂組成物之線膨脹係數變大,作為三次元安裝所用之底部填充材使用時,密封部位之耐熱循環性降低。 When the content of the alumina filler of component (C) is less than 45 parts by mass, the linear expansion coefficient of the resin composition becomes larger, and when used as an underfill material for three-dimensional installation, the heat cycle resistance of the sealing part is reduced.
另一方面,(C)成分之氧化鋁填充劑之含量超過90質量份時,樹脂組成物之黏度增加,作為三次元安裝所用之底部填充材使用時,作為覆晶封裝用液狀密封材使用時,對半導體元件與基板之間隙之注入性降低。 On the other hand, when the content of the alumina filler of component (C) exceeds 90 parts by mass, the viscosity of the resin composition increases. When used as an underfill material for three-dimensional mounting, it is used as a liquid sealing material for flip chip packaging. At this time, the implantability into the gap between the semiconductor element and the substrate decreases.
(C)成分之氧化鋁填充劑之含量相對於樹脂組成物之全部成分之合計質量100質量份更好為50~80質量份,又更好為55~75質量份。 (C) The content of the alumina filler of the component is preferably 50 to 80 parts by mass, and more preferably 55 to 75 parts by mass relative to 100 parts by mass of the total mass of all components of the resin composition.
本發明之環氧樹脂組成物除上述(A)~(C)成分以外,亦可根據需要含有以下所述之成分。 In addition to the above-mentioned (A) to (C) components, the epoxy resin composition of the present invention may contain the following components as necessary.
本發明之環氧樹脂組成物為了提高作為三次元安裝所用之底部填充材使用時之密著性,亦可含有偶合劑作為 (D)成分。 In order to improve the adhesion of the epoxy resin composition of the present invention as an underfill material for three-dimensional installation, it may also contain a coupling agent as (D) Ingredients.
作為(D)成分之偶合劑可使用環氧系、胺系、乙烯系、甲基丙烯酸系、丙烯酸系、硫醇系等之各種矽烷偶合劑。該等中,環氧系矽烷偶合劑由於提高將環氧樹脂組成物作為三次元安裝所用之底部填充材使用時之密著性及機械強度之效果優異故而較佳。 As the coupling agent of the component (D), various silane coupling agents such as epoxy-based, amine-based, vinyl-based, methacrylic-based, acrylic-based, and thiol-based, can be used. Among them, the epoxy-based silane coupling agent is preferable because it has an excellent effect of improving the adhesion and mechanical strength when the epoxy resin composition is used as an underfill material for three-dimensional mounting.
作為環氧系矽烷偶合劑之具體例舉例為3-縮水甘油氧基丙基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷(商品名:KBM-303,信越化學股份有限公司製)、3-縮水甘油氧基丙基甲基二甲氧基矽烷(商品名:KBM-402,信越化學股份有限公司製)、3-縮水甘油氧基丙基三甲氧基矽烷(商品名:KBM-403,信越化學股份有限公司製)、3-縮水甘油氧基丙基甲基二乙氧基矽烷(商品名:KBE-402,信越化學股份有限公司製)、3-縮水甘油氧基丙基三乙氧基矽烷(商品名:KBE-403,信越化學股份有限公司製)等。 Specific examples of epoxy-based silane coupling agents include 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (trade name: KBM- 303, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-glycidoxypropylmethyldimethoxysilane (trade name: KBM-402, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-glycidoxypropyl trimethyl Oxyoxysilane (trade name: KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-glycidoxypropylmethyl diethoxysilane (trade name: KBE-402, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-glycidoxypropyltriethoxysilane (trade name: KBE-403, manufactured by Shin-Etsu Chemical Co., Ltd.) and the like.
含有矽烷偶合劑作為(D)成分時,以相對於(A)成分之液狀環氧樹脂及(B)成分之硬化劑之合計質量的質量百分率計,較好為0.1~3.0質量%,更好為0.3~2.0質量%,又更好為0.5~1.5質量%。 When a silane coupling agent is contained as component (D), it is preferably 0.1 to 3.0% by mass in terms of mass percentage relative to the total mass of the liquid epoxy resin of component (A) and hardener of component (B), and more It is preferably 0.3 to 2.0% by mass, and more preferably 0.5 to 1.5% by mass.
本發明之液狀密封材亦可含有硬化促進劑作為(E)成分。作為(B)成分之硬化劑使用酸酐系硬化劑或酚系硬化 劑時,較好含有作為(E)成分之硬化促進劑。 The liquid sealing material of the present invention may contain a hardening accelerator as the (E) component. As the hardener of component (B), use acid anhydride hardener or phenol hardener In the case of an agent, it is preferable to contain a hardening accelerator as the component (E).
作為(E)成分之硬化促進劑若為環氧樹脂之硬化促進劑,則未特別限定,可使用習知者。舉例為例如咪唑系硬化促進劑(包含微膠囊型、環氧加成型)、三級胺系硬化促進劑、磷化合物系硬化促進劑等。 If the hardening accelerator as the component (E) is an epoxy resin hardening accelerator, it is not particularly limited, and a conventional one can be used. Examples include imidazole hardening accelerators (including microcapsule type and epoxy addition molding), tertiary amine hardening accelerators, phosphorus compound hardening accelerators, and the like.
該等中咪唑系硬化促進劑由於與半導體樹脂密封材之其他成分之相溶性及半導體樹脂密封材之硬化速度之方面優異故而較佳。 These imidazole-based hardening accelerators are preferable because they are excellent in compatibility with other components of the semiconductor resin sealing material and the hardening speed of the semiconductor resin sealing material.
作為咪唑系硬化促進劑之具體例,舉例為2-甲基咪唑、2-十一烷基咪唑、2-十五烷基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑等之咪唑化合物等。 Specific examples of imidazole-based hardening accelerators include 2-methylimidazole, 2-undecylimidazole, 2-pentadecylimidazole, 2-ethyl-4-methylimidazole, and 2-phenylimidazole. , 2-Phenyl-4-methylimidazole and other imidazole compounds.
且亦可使用稱為微膠囊型咪唑或環氧加成型咪唑之膠囊化咪唑。亦即,亦可使用以尿素或異氰酸酯化合物加成咪唑化合物,進而其表面以異氰酸酯化合物予以封阻而膠囊化之咪唑系潛在性硬化劑、或以環氧基化合物加成咪唑化合物,進而其表面以異氰酸酯化合物予以封阻而膠囊化之咪唑系潛在性硬化劑。具體而言可舉例為例如NOVACURE HX3941HP、NOVACURE HXA3042HP、NOVACURE HXA3922HP、NOVACURE HXA3792、NOVACURE HX3748、NOVACURE HX3721、NOVACURE HX3722、NOVACURE HX3088、NOVACURE HX3741、NOVACURE HX3742、NOVACURE HX3613(均為旭化成化學公司製,商品名)等,AMICURE PN-40J(味之素精密技 術股份有限公司製,商品名)、FUJICURE FXR-1121(富士化成工業股份有限公司製,商品名)。 In addition, encapsulated imidazoles called microencapsulated imidazoles or epoxy addition-formed imidazoles can also be used. That is, it is also possible to use an imidazole-based latent hardener whose surface is blocked and encapsulated with urea or isocyanate compound, or an imidazole compound is added with epoxy compound, and its surface Imidazole is a latent hardener that is blocked and encapsulated by isocyanate compounds. Specifically, for example, NOVACURE HX3941HP, NOVACURE HXA3042HP, NOVACURE HXA3922HP, NOVACURE HXA3792, NOVACURE HX3748, NOVACURE HX3721, NOVACURE HX3722, NOVACURE HX3088, NOVACURE HX3741, NOVACURE HX3741, NOVACURE HX3742, manufactured by Asahi Chemical Etc., AMICURE PN-40J (Ajinomoto Precision Technology FUJICURE FXR-1121 (manufactured by Fuji Chemical Co., Ltd., trade name), FUJICURE FXR-1121 (manufactured by Fuji Chemical Industry Co., Ltd., trade name).
本發明之液狀密封材可進而含有除上述(A)~(E)成分以外之成分。作為此種成分之具體例可調配彈性體、硬化促進劑、金屬錯合物、調平劑、著色劑、離子捕捉劑、消泡劑、難燃劑等。各調配劑之種類、調配量如常用方法。 The liquid sealing material of the present invention may further contain components other than the aforementioned (A) to (E) components. As specific examples of such components, elastomers, hardening accelerators, metal complexes, leveling agents, colorants, ion scavengers, defoamers, flame retardants, etc. can be formulated. The type and amount of each compounding agent are as usual.
本發明之液狀密封材係藉由將上述(A)~(C)成分以及於含有時之進而(D)成分、(E)成分以及進而根據需要調配之其他調配劑混合、攪拌而調製。 The liquid sealing material of the present invention is prepared by mixing and stirring the above-mentioned (A) to (C) components and, when contained, the (D) component, (E) component, and other compounding agents that are further compounded as necessary.
混合攪拌可使用輥磨機進行,但當然並非限定於此。(A)成分之環氧樹脂為固形時,較好藉由加熱等予以液狀化以及流動化而混合。 Mixing and stirring can be performed using a roll mill, but of course it is not limited to this. (A) When the epoxy resin of the component is in a solid form, it is preferably liquefied and fluidized by heating or the like to be mixed.
可同時混合各成分,亦可先混合一部分,隨後混合其餘部分等,亦可適當變更均無妨。 The ingredients can be mixed at the same time, or a part can be mixed first, and then the rest can be mixed, etc., and it can be changed appropriately.
其次針對本發明之環氧樹脂組成物之特性加以描述。 Next, the characteristics of the epoxy resin composition of the present invention will be described.
本發明之環氧樹脂組成物於常溫(25℃)之黏度較好為200Pa.s以下,可使作為三次元安裝用之底部填充材使用時之注入性良好。 The epoxy resin composition of the present invention preferably has a viscosity of 200Pa at normal temperature (25°C). Below s, it can be used as an underfill material for three-dimensional installation with good injectability.
本發明之環氧樹脂組成物於常溫(25℃)之黏度更好為 150Pa.s以下。 The viscosity of the epoxy resin composition of the present invention at room temperature (25°C) is better 150Pa. s or less.
又,本發明之環氧樹脂組成物之加熱硬化物之玻璃轉移溫度(Tg)較好為50℃以上,作為三次元安裝用之底部填充材使用時,以底部填充材密封之部位之耐熱循環性優異。 Furthermore, the glass transition temperature (Tg) of the heat-hardened product of the epoxy resin composition of the present invention is preferably 50°C or higher. When used as an underfill material for three-dimensional installation, heat resistance cycle of the part sealed with the underfill material Excellent performance.
本發明之環氧樹脂組成物之加熱硬化物之玻璃轉移溫度(Tg)更好為80℃以上。 The glass transition temperature (Tg) of the heat-hardened product of the epoxy resin composition of the present invention is more preferably 80°C or higher.
又,本發明之環氧樹脂組成物之加熱硬化物之熱傳導率較好為0.3W/(m.K)以上,作為三次元安裝用之底部填充材使用時,熱設計容易。 Furthermore, the thermal conductivity of the heat-cured product of the epoxy resin composition of the present invention is preferably 0.3 W/(m.K) or higher, and when used as an underfill material for three-dimensional installation, thermal design is easy.
本發明之環氧樹脂組成物之加熱硬化物之熱傳導率更好為0.5W/(m.K)以上,又更好為0.7W/(m.K)以上。 The thermal conductivity of the heat-hardened product of the epoxy resin composition of the present invention is more preferably 0.5 W/(m.K) or more, and more preferably 0.7 W/(m.K) or more.
又,本發明之環氧樹脂組成物之硬化物中之α線量較好為0.0020count/cm2.h以下,作為三次元安裝用之底部填充材使用時,可防止易受α線影響之裝置的誤動作。 In addition, the amount of α line in the cured product of the epoxy resin composition of the present invention is preferably 0.0020 count/cm 2 . Below h, when used as an underfill material for three-dimensional installation, it can prevent malfunctions of devices that are susceptible to α-line.
又,本發明之環氧樹脂組成物之硬化物中之α線量更好為0.0015count/cm2.h以下,又更好為0.0010count/cm2.h以下。 Furthermore, the amount of alpha line in the cured product of the epoxy resin composition of the present invention is more preferably 0.0015 count/cm 2 . Below h, it is more preferably 0.0010count/cm 2 . h or less.
又,本發明之環氧樹脂組成物作為三次元安裝用之底部填充材使用時,藉由毛細管之注入性良好。具體而言,以後述實施例中記載之順序評價對間隙之注入性時,對20μm間隙之注入時間較好為800秒以下,更好為750秒以下,又更好為650秒以下。 In addition, when the epoxy resin composition of the present invention is used as an underfill material for three-dimensional mounting, the injectability by the capillary tube is good. Specifically, when evaluating the injectability into the gap in the order described in the examples described later, the injection time into the 20 μm gap is preferably 800 seconds or less, more preferably 750 seconds or less, and still more preferably 650 seconds or less.
且,間隙之注入時不發生孔隙。 Moreover, no porosity occurs when the gap is injected.
其次本發明之環氧樹脂組成物之使用方法舉例作為底部填充材使用為例加以說明。 Next, the use method of the epoxy resin composition of the present invention will be described as an example of using it as an underfill material.
本發明之環氧樹脂組成物作為底部填充材使用時,藉以下順序將本發明之環氧樹脂組成物填充於基板與半導體元件之間之間隙。 When the epoxy resin composition of the present invention is used as an underfill material, the epoxy resin composition of the present invention is filled in the gap between the substrate and the semiconductor element by the following procedure.
將基板邊加熱至例如70~130℃,邊於半導體元件之一端塗佈本發明之環氧樹脂組成物,藉由毛細管現象,將本發明之環氧樹脂組成物填充於基板與半導體元件之間之間隙。此時,為了縮短本發明之環氧樹脂組成物填充所需之時間,亦可使基板傾斜,使該間隙內外產生壓力差。 While heating the substrate to 70~130°C, for example, the epoxy resin composition of the present invention is applied to one end of the semiconductor element, and the epoxy resin composition of the present invention is filled between the substrate and the semiconductor element by capillary phenomenon之 gap. At this time, in order to shorten the time required for filling the epoxy resin composition of the present invention, the substrate may be tilted to cause a pressure difference between the inside and outside of the gap.
於該間隙中填充本發明之環氧樹脂組成物後,使該基板於特定溫度加熱特定時間,具體而言,於80~200℃加熱0.2~6小時,藉由使環氧樹脂組成物加熱硬化而密封該間隙。 After filling the gap with the epoxy resin composition of the present invention, the substrate is heated at a specific temperature for a specific time, specifically, heated at 80-200°C for 0.2-6 hours, and the epoxy resin composition is cured by heating And seal the gap.
本發明之半導體裝置係使用本發明之環氧樹脂組成物作為底部填充材,以上述順序對密封部位亦即基板與半導體元件間之間隙予以密封者。此處,作為進行密封之半導體元件為積體電路、大型積體電路、電晶體、晶體閘流管及二極體以及電容器等而未特別限定。 The semiconductor device of the present invention uses the epoxy resin composition of the present invention as an underfill material to seal the sealing portion, that is, the gap between the substrate and the semiconductor element, in the above-mentioned order. Here, the semiconductor element to be sealed is an integrated circuit, a large integrated circuit, a transistor, a thyristor, a diode, a capacitor, etc., and is not particularly limited.
但因上述之加熱硬化物之熱傳導率高,故而較好為使用將裸晶片層合之三次元封裝(例如堆疊型CSP)者,或使用使半導體晶片以獨立單體暫時封裝後將該等重疊複數個而實現三次元化之封裝層合三次元模組者之具有三次元安 裝構造之半導體裝置。 However, due to the high thermal conductivity of the above-mentioned heat-cured material, it is better to use a three-dimensional package (such as a stacked CSP) in which bare chips are laminated, or to use a semiconductor chip that is temporarily packaged with independent monomers and then overlapped The three-dimensional package and laminated three-dimensional module have three-dimensional safety Semiconductor device with structure.
又,本發明之環氧樹脂組成物亦可用於接著劑、焊料阻劑等之用途。 In addition, the epoxy resin composition of the present invention can also be used for applications such as adhesives and solder resists.
以下藉由實施例詳細說明本發明,但本發明不限定於此。 Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited thereto.
以成為下述表所示之調配比例之方式,使用輥磨機混練原料而調製實施例1~4、比較例1~2之環氧樹脂組成物。又,表中各組成相關之數值表示質量份。 The raw materials were kneaded using a roll mill to prepare the epoxy resin compositions of Examples 1 to 4 and Comparative Examples 1 to 2 so as to have the mixing ratio shown in the following table. In addition, the numerical values related to each composition in the table indicate parts by mass.
環氧樹脂A1:雙酚F型環氧樹脂,製品名YDF8170,新日鐵化學股份有限公司製,環氧當量158g/eq Epoxy resin A1: Bisphenol F type epoxy resin, product name YDF8170, manufactured by Nippon Steel Chemical Co., Ltd., epoxy equivalent 158g/eq
硬化劑B1:胺系硬化劑,4,4’-二胺基-3,3’-二乙基二苯基甲烷,製品名KAYAHARD A-A,日本化藥股份有限公司製 Hardener B1: Amine hardener, 4,4’-diamino-3,3’-diethyldiphenylmethane, product name Kayahard A-A, manufactured by Nippon Kayaku Co., Ltd.
氧化鋁填充劑C1:平均粒徑0.7μm,鈾含量0.1ppb Alumina filler C1: average particle size 0.7μm, uranium content 0.1ppb
氧化鋁填充劑C2:平均粒徑0.7μm,鈾含量3ppb Alumina filler C2: average particle size 0.7μm, uranium content 3ppb
氧化鋁填充劑C3:平均粒徑0.7μm,鈾含量9ppb Alumina filler C3: average particle size 0.7μm, uranium content 9ppb
氧化鋁填充劑C4:平均粒徑0.7μm,鈾含量16ppb Alumina filler C4: average particle size 0.7μm, uranium content 16ppb
氧化鋁填充劑C5:平均粒徑4.9μm,鈾含量9ppb Alumina filler C5: average particle size 4.9μm, uranium content 9ppb
氧化鋁填充劑C6:平均粒徑5μm,鈾含量9ppb Alumina filler C6: average particle size 5μm, uranium content 9ppb
偶合劑D1:環氧系矽烷偶合劑(3-縮水甘油氧基丙基三甲氧基矽烷),製品名KBM403(信越化學工業股份有限公司製) Coupling agent D1: Epoxy silane coupling agent (3-glycidoxypropyltrimethoxysilane), product name KBM403 (manufactured by Shin-Etsu Chemical Co., Ltd.)
調製之環氧樹脂組成物作為評價用試料實施以下評價。 The prepared epoxy resin composition was used as an evaluation sample and subjected to the following evaluations.
使用BrookField黏度計,於液溫25℃、50rpm測定剛調製後之評價用試料之黏度。 Using a BrookField viscometer, the viscosity of the evaluation sample immediately after preparation was measured at a liquid temperature of 25°C and 50 rpm.
針對將評價用試料於165℃加熱硬化120分鐘而成形為8mm×200mm之圓柱狀之硬化物,使用BRUKER ASX製TMA4000S,藉由TMA法測定玻璃轉移溫度。 For the evaluation sample, heat and harden at 165°C for 120 minutes to form 8mm The cylindrical hardened product of ×200mm uses TMA4000S manufactured by BRUKER ASX, and the glass transition temperature is measured by the TMA method.
藉以下順序測定評價用試料之硬化物之熱傳導率。 The thermal conductivity of the cured product of the evaluation sample was measured by the following procedure.
將評價用試料於165℃加熱硬化120分鐘之樹脂硬化物切成10mm×10mm,使用熱傳導率測定裝置(LFA447 NANOFLASH,NETZSCH公司製)進行熱傳導率之測定。 The resin cured product of the evaluation sample heated and cured at 165°C for 120 minutes was cut into 10 mm × 10 mm, and the thermal conductivity was measured using a thermal conductivity measuring device (LFA447 NANOFLASH, manufactured by NETZSCH).
於2片玻璃基板之間使用鋁膠帶設置20μm之間隙,替代半導體元件而固定玻璃板製作試驗片。將該試驗片載置於設定於110℃之加熱板上,於玻璃板之一端側塗佈評價用試料,測定注入距離直至到達20mm之時間。該順序實施2次,將測定值之平均值設為注入時間之測定值。 Use aluminum tape to set a gap of 20 μm between the two glass substrates, instead of semiconductor elements, fix the glass plate to make a test piece. The test piece was placed on a hot plate set at 110°C, a sample for evaluation was applied to one end of the glass plate, and the injection distance was measured until it reached 20 mm. This sequence is performed twice, and the average value of the measured value is set as the measured value of the injection time.
又,藉由目視確認所注入之評價用試料有無孔隙。 In addition, the presence or absence of voids in the injected sample for evaluation was confirmed visually.
實施例1~4之常溫(25℃)之黏度均為200Pa.s以下,加熱硬化物之Tg均為200℃以下,熱傳導率均為0.3W/(m.K)以上,α線量均為0.020count/cm2.h以下,20μm間隙之注入時間均為800秒以下,注入時未確認到孔隙。(C)成分之氧化鋁填充劑之鈾含量超過9ppb之比較例1,硬化物之α線量超過0.020count/cm2.h。(C)成分之氧化鋁填充劑之平均粒徑超過4.9μm之比較例2,20μm間隙之注入時間超過800秒,注入時確認到孔隙。 The viscosity of Examples 1 to 4 at room temperature (25°C) are all 200Pa. Below s, the Tg of the heat-cured material is below 200℃, the thermal conductivity is above 0.3W/(m.K), and the amount of α line is 0.020count/cm 2 . The injection time for a gap of less than h and 20μm is less than 800 seconds, and no voids are confirmed during injection. (C) In Comparative Example 1, where the uranium content of the alumina filler of component (C) exceeds 9ppb, the alpha line amount of the hardened product exceeds 0.020count/cm 2 . h. In Comparative Example 2 where the average particle size of the alumina filler of component (C) exceeded 4.9 μm, the injection time in the 20 μm gap exceeded 800 seconds, and voids were confirmed during injection.
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| CN115667353B (en) * | 2020-05-27 | 2025-08-26 | 住友化学株式会社 | Epoxy resin composition and cured product thereof |
| CN112080238B (en) * | 2020-09-07 | 2022-05-27 | 江苏矽时代材料科技有限公司 | Heat-conducting filling adhesive and preparation method and application thereof |
| TW202222692A (en) | 2020-11-02 | 2022-06-16 | 日商三菱化學股份有限公司 | Zeolite, method for producing zeolite, composition, liquid composition, liquid sealing agent, resin composite material, sealing material, method for manufatuctring sealing material, and device |
| JP2024535084A (en) * | 2021-09-24 | 2024-09-26 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | Thermally conductive adhesive composition, its manufacturing method and use |
| WO2023089878A1 (en) * | 2021-11-16 | 2023-05-25 | ナミックス株式会社 | Epoxy resin composition, liquid compression mold material, glob-top material, and semiconductor device |
| KR102693047B1 (en) | 2022-01-12 | 2024-08-09 | 주식회사 이포트 | Method of manufacturing alumina and alumina using thereof |
| CN114292613A (en) * | 2022-02-16 | 2022-04-08 | 武汉市三选科技有限公司 | Composite film, flip LED chip and manufacturing method thereof |
| JPWO2023210790A1 (en) | 2022-04-28 | 2023-11-02 | ||
| CN116445117B (en) * | 2023-04-23 | 2023-12-29 | 有行鲨鱼(上海)科技股份有限公司 | Photo-thermal double-solid edge sealing adhesive for reinforcing large-size chip and preparation and use thereof |
| JP2025060436A (en) * | 2023-09-29 | 2025-04-10 | 住友化学株式会社 | Resin composition and sheet molding compound |
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| JP2025060437A (en) * | 2023-09-29 | 2025-04-10 | 住友化学株式会社 | Resin composition and sheet molding compound, and alumina particles used in the resin composition |
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| TW201727848A (en) | 2017-08-01 |
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| WO2017104298A1 (en) | 2017-06-22 |
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