TWI706555B - Light emitting device - Google Patents

Abstract

A light emitting device includes a substrate, an active component, a first blocking layer, a light conversion layer, a transparent electrode, a second blocking layer, an electroluminescence component, a top electrode, and a light sensing component. The first blocking layer is on the active component and includes a first opening. The light conversion layer is in the first opening. The transparent electrode is on the first blocking layer and the light conversion layer and is electrically connected to the active component. The second blocking layer is on the transparent electrode and includes a second opening corresponding to the first opening. The electroluminescence component is in the second opening. The transparent electrode is between the first opening and the second opening. The electroluminescence component is between the top electrode and the transparent electrode. The light sensing component includes a first electrode, a second electrode, and a light sensing layer. The light sensing layer is positioned corresponding to the first opening. The first electrode and the second electrode are respectively electrically connected to the light sensing layer.

Description

Light-emitting device

The present invention relates to a light-emitting device, and more particularly, to a light-emitting device for a display panel.

There is a display panel. The display panel has a plurality of light-emitting devices. Each light-emitting device includes quantum dots and corresponding active elements. The light-emitting opening of each quantum dot can form a pixel, and the light-emitting openings of these quantum dots are arranged to form Pixel array, and this pixel array can be used to display images. Each quantum dot is filled with electroluminescent material and light conversion material, and the electroluminescent element in each quantum dot is electrically connected to the corresponding active element. The control module of the display panel can control each active element, and use the active element to drive the electroluminescent element in the corresponding quantum dot to make the electroluminescent material emit light. The corresponding light conversion material converts the light emitted by the electroluminescent material into light of a specific color, and the light of the specific color is emitted from the corresponding light exit opening. When the control module of the display panel gives each active element the same voltage or current in the same frame, the brightness of each electroluminescent material should be the same, and the brightness of each light conversion material should also be the same Yes, and the brightness or color of the pixel array in this frame should be consistent overall.

According to the existing display panel of this kind, even if the voltage or current received by the electroluminescent material in each quantum dot is the same, the brightness of each pixel corresponding to each quantum dot may be Inconsistent. One of the reasons is the error in the manufacturing process and the tolerance of the device itself, resulting in that the efficiency of the electroluminescent device in the quantum dots or the thickness of the light conversion material cannot be exactly the same. Therefore, under the same voltage or current, the electroluminescence in each quantum dot The light-emitting brightness of the luminescent material may be slightly different, and the light-emitting brightness of the light conversion material in each quantum dot may also be slightly different. In addition, the light conversion material needs to convert the incident light provided by the electroluminescent element into light of a specific wavelength, so that the light emitted from the light exit opening will have a specific color. However, because the thickness of the light conversion material is limited, the incident light that should be converted will still leak out at a certain rate. Moreover, since the thickness of the light conversion material of each quantum dot cannot be exactly the same, the light leakage rate of each quantum dot is also different, which will also cause the brightness and color purity of the light emitted by each pixel to not be completely consistent. It can be seen that the light emitting device of the existing display panel will cause the phenomenon of color unevenness (mura).

At least one embodiment of the present invention provides a light-emitting device to ensure that the brightness of the light-emitting device can meet expectations and reduce the phenomenon of color unevenness.

At least one embodiment of the present invention provides a light-emitting device, which includes a substrate, an active element, a first light-shielding layer, a light conversion layer, a transparent electrode, a second light-shielding layer, an electroluminescent element, a top electrode, and a light sensing element. The active device is located on the substrate, the first light shielding layer is located on the active device and includes a first opening, the light conversion layer is located in the first opening, and the transparent electrode is located on the first light shielding layer and the light conversion layer and is electrically connected to the active device. The light shielding layer is located on the transparent electrode and includes a second opening corresponding to the first opening, and the electroluminescent element is located in the second opening. The transparent electrode is located between the first opening and the second opening, and the electroluminescent element is located between the top electrode and the transparent electrode. The light sensing element includes a first electrode, a second electrode, and a light sensing layer. The light sensing layer is disposed corresponding to the first opening, and the first electrode and the second electrode are electrically connected to the light sensing layer, respectively.

In summary, according to at least one embodiment of the light-emitting device of the present invention, it can be The light-sensing element senses the light-emitting brightness of the first opening to facilitate maintaining or adjusting the voltage or current used by the active element to drive the electroluminescent element according to the brightness, thereby ensuring that the light-emitting device's light-emitting brightness can meet expectations and reducing color Uneven phenomenon.

The detailed features and advantages of the present invention are described in detail in the following embodiments. The content is sufficient to enable anyone familiar with the relevant technology to understand the technical content of the present invention and implement it accordingly, and according to the content disclosed in this specification, the scope of patent application and the drawings Anyone familiar with related technologies can easily understand the related objectives and advantages of the present invention.

100: Light-emitting device

110: substrate

120: Active component

121: Channel layer

122: gate insulating layer

123: Interlayer insulation layer

124: first conductor layer

125: second conductor layer

130: first shading layer

131: First opening

132: Part One

133: Part Two

140: light conversion layer

141: color resist layer

150: Transparent electrode

160: second shading layer

161: second opening

170: Electroluminescent element

171: The first transport layer

172: second transport layer

173: light-emitting layer

180: top electrode

190: light sensing element

191: first electrode

192: second electrode

193: light sensing layer

210: third shading layer

211: Third Opening

220: first insulating layer

230: second insulating layer

240: encapsulation layer

250: second light sensing element

251: first electrode

252: second electrode

253: light sensing layer

300: control module

D: Dip pole

G: Gate

ND: Normal direction

S: source

W11, W12, W21, W22: width

Fig. 1 is a schematic bottom view of the light-emitting device according to the first embodiment of the present invention; Fig. 2 is a schematic cross-sectional view at the line 2-2 of Fig. 1; Fig. 3 is a system block diagram of the light-emitting device of Fig. 1 4 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the present invention; FIG. 5 is a schematic cross-sectional view of a light-emitting device according to a third embodiment of the present invention; Fig. 7 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment of the present invention; and Fig. 8 is a schematic cross-sectional view of a light-emitting device according to a sixth embodiment of the present invention.

Please refer to FIGS. 1 and 2. FIG. 1 is a schematic bottom view of a light emitting device 100 according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view at the line 2-2 of FIG. As shown in FIGS. 1 and 2, in this embodiment, the light-emitting device 100 includes a substrate 110, an active element 120, a first light-shielding layer 130, a light conversion layer 140, a transparent electrode 150, a second light-shielding layer 160, and electroluminescence. Element 170, The top electrode 180 and the light sensing element 190. The active device 120 is located on the substrate 110, and the first light shielding layer 130 is located on the active device 120. The first light shielding layer 130 includes a first opening 131, and the light conversion layer 140 is located in the first opening 131. The transparent electrode 150 is located on the first light shielding layer 130 and the light conversion layer 140, and the transparent electrode 150 is electrically connected to the active device 120. The second light shielding layer 160 is located on the transparent electrode 150, and the second light shielding layer 160 includes a second opening 161, and the electroluminescent element 170 is located in the second opening 161. The second opening 161 corresponds to the first opening 131, for example, the first opening 131 and the second opening 161 are aligned with each other in the normal direction ND of the substrate 110. The transparent electrode 150 is located on the first light shielding layer 130, and the transparent electrode 150 is located between the first opening 131 and the second opening 161. The top electrode 180 is located on the side of the second opening 161 away from the transparent electrode 150, the electroluminescent element 170 is located between the top electrode 180 and the transparent electrode 150, and both ends of the electroluminescent element 170 are electrically connected to the transparent electrode 150 and the top Electrodes 180. In some embodiments, the top electrode 180 may also be located on the second light-shielding layer 160, and the top electrode 180 extends into the second opening 161 to be electrically connected to the electroluminescent element 170.

As shown in FIG. 2, in this embodiment, the active device 120 includes a channel layer 121, a gate insulating layer 122, an interlayer insulating layer 123, a gate G of the first conductor layer 124, and a source S of the second conductor layer 125. And drain D. The channel layer 121 is located on the substrate 110, the gate insulating layer 122 is located on the channel layer 121, the gate G is located on the gate insulating layer 122, and the gate insulating layer 122 is located between the gate G and the channel layer 121. The interlayer insulating layer 123 is located on the gate G and the gate edge layer, the source S and the drain D are located on the interlayer insulating layer 123, and the interlayer insulating layer 123 is located between the source S and the gate G, and the drain D and the gate Between extremely G. The gate G is formed by the first conductive layer 124. For example, after the first conductive layer 124 is formed on the gate insulating layer 122, the first conductive layer 124 is further patterned to form the gate G. The source S and the drain D are formed by the second conductor layer 125, for example, on the second conductor layer 125 After being formed on the interlayer insulating layer 123, the second conductive layer 125 is further patterned to form a source S and a drain D. The gate G and the channel layer 121 are separated by the gate insulating layer 122, and the source S and the drain D pass through the interlayer insulating layer 123 and the gate insulating layer 122, respectively, and are electrically connected to the channel layer 121.

As shown in FIG. 2, in this embodiment, the first light shielding layer 130 includes a first portion 132 and a second portion 133, and the first portion 132 and the second portion 133 are connected to each other. The first part 132 substantially covers the active device 120, the second part 133 extends into the interlayer insulating layer 123 and the gate insulating layer 122, and the first opening 131 penetrates the second part 133 of the first light shielding layer 130. The transparent electrode 150 passes through the first portion 132 of the first light shielding layer 130 and is electrically connected to the drain electrode D. In this embodiment, the second portion 133 penetrates the interlayer insulating layer 123 and the gate insulating layer 122.

As shown in FIGS. 1 and 2, in this embodiment, the light-emitting device 100 further includes a third light shielding layer 210. The third light shielding layer 210 is located between the substrate 110 and the active device 120, and the third light shielding layer 210 includes a third opening 211. The third opening 211 corresponds to the first opening 131, for example, the first opening 131 and the third opening 211 are aligned with each other in the normal direction ND of the substrate 110.

As shown in FIG. 2, in this embodiment, the active device 120 is used to drive the electroluminescent device 170. For example, the active device 120 drives the electroluminescent device 170 with a specific voltage or current to make the electroluminescent device 170 emit light. In addition, the first light shielding layer 130, the second light shielding layer 160, the third light shielding layer 210, and the top electrode 180 are opaque, and the substrate 110 is transparent. The light emitted by the electroluminescent element 170 will pass through the transparent electrode 150 from the second opening 161 and enter the first opening 131, and the light conversion layer 140 in the first opening 131 will convert the light from the electroluminescent element 170 For a specific color. For example, the light emitted by the electroluminescent element 170 is blue light, and the light conversion layer 140 converts the blue light into light of a specific wavelength, and converts the blue light into green light, red light or light of a specific color. The light of a specific color converted by the light conversion layer 140 is emitted from the second opening 161 toward the third opening 211, and the light emitted from the second opening 161 is further emitted through the third opening 211 and the substrate 110. In this embodiment, the light emitted from the second opening 161 may diffuse in the form of a spherical surface. The third light shielding layer 210 can block the diffused light and restrict the light from only emitting from the third opening 211, so as to pass through the substrate. The light of 110 will be concentrated in a range corresponding to the third opening 211. In some embodiments, the light emitting device 100 may not include the third light shielding layer 210, so the light passing through the substrate 110 will be concentrated in the area corresponding to the first opening 131.

As shown in FIG. 2, in this embodiment, the light conversion layer 140 includes a color resist layer 141, and the color resist layer 141 is located on the side of the first opening 131 away from the transparent electrode 150. The color resist layer 141 can absorb light leakage. For example, the light emitted by the electroluminescent element 170 is blue light, and the light conversion layer 140 converts blue light into red light. The color resist layer 141 may include a red color resist material to absorb the leaked blue light. , The light emitted from the light conversion layer 140 is red light. In some embodiments, the light conversion layer 140 includes quantum dot materials, such as perovskite materials, cadmium selenide, indium phosphide, etc., but is not limited thereto. In some embodiments, the color resist layer 141 includes filter materials, such as dyes, pigments, fluorescent materials, etc., but is not limited thereto.

As shown in FIG. 2, in this embodiment, the electroluminescent element 170 includes a first transmission layer 171, a light emitting layer 173 and a second transmission layer 172. The light-emitting layer 173 is between the first transmission layer 171 and the second transmission layer 172, the first transmission layer 171 is connected to the transparent electrode 150, and the second transmission layer 172 is connected to the top electrode 180. One of the first transport layer 171 and the second transport layer 172 is an electron transport layer, and the other is a hole transport layer. In some embodiments, the first transmission layer 171 may include nickel oxide, and the second transmission layer 172 may include zinc oxide, but is not limited thereto. In some embodiments, the light-emitting layer 173 may include organic light-emitting materials or quantum dot materials, such as perovskite, but is not limited thereto.

As shown in Figure 2, in this embodiment, the first opening 131 is inverted cone shape, and The second opening 161 is tapered. The width W11 of the side of the first opening 131 away from the transparent electrode 150 is smaller than the width W12 of the side of the first opening 131 close to the transparent electrode 150, and the first opening 131 is from the side away from the transparent electrode 150 to the side close to the transparent electrode 150 One side becomes wider. The width W22 of the side of the second opening 161 away from the transparent electrode 150 is smaller than the width W21 of the side of the second opening 161 close to the transparent electrode 150, and the second opening 161 is from the side away from the transparent electrode 150 to the side close to the transparent electrode 150 One side becomes wider. In this embodiment, the width W21 of the side of the second opening 161 close to the transparent electrode 150 is greater than or equal to the width W12 of the side of the first opening 131 close to the transparent electrode 150, but is not limited thereto. In some embodiments, the second opening 161 may also have an inverted cone shape, that is, the width W22 of the second opening 161 away from the transparent electrode 150 is greater than the width W21 of the second opening 161 near the transparent electrode 150. In some embodiments, the second opening 161 may also be cylindrical, that is, the width W22 of the side of the second opening 161 away from the transparent electrode 150 is equal to the width W21 of the side of the second opening 161 close to the transparent electrode 150.

In some embodiments, the light emitting device 100 can be applied to an active light emitting display panel, and the active device 120 can include multiple sets of source S, drain D, channel layer 121 and gate G, and the first light shielding layer 130, The second light shielding layer 160 and the third light shielding layer 210 may include a plurality of first openings 131, a plurality of second openings 161, and a plurality of third openings 211, respectively. The source electrode S, the drain electrode D, the drain electrode D in the channel layer 121 and the gate electrode G of each group are electrically connected to the electroluminescent element 170 in the corresponding second opening 161 through the corresponding transparent electrode 150, and each second The opening 161 is aligned with the corresponding first opening 131 and the third opening 211 in the normal direction ND of the substrate 110. As shown in FIG. 1, the plurality of third openings 211 of the third light shielding layer 210 are arranged in a matrix, but it is not limited thereto. As shown in FIG. 2, each third opening 211 is aligned with a set of corresponding electroluminescent element 170 and light conversion layer 140. Each group of source S, drain D, channel layer 121 and gate G can independently drive the corresponding electro-induced The light emitting element 170 emits light, and the light emitted by the electroluminescent element 170 will be emitted from the corresponding third opening 211. In other words, each third opening 211 is each pixel light-emitting port of the pixel array of the display panel.

As shown in FIG. 2, in this embodiment, the light sensing element 190 includes a first electrode 191, a second electrode 192 and a light sensing layer 193. The light sensing layer 193 is disposed corresponding to the first opening 131 to receive the light passing through the first opening 131 or the light emitted from the first opening 131. The first electrode 191 and the second electrode 192 are respectively electrically connected to the light sensing layer 193 to generate a photocurrent after the light sensing layer 193 receives light. The first electrode 191 is located between the substrate 110 and the active device 120, and the second electrode 192 is located between the active device 120 and the first light shielding layer 130. In this embodiment, when the light emitted by the electroluminescent element 170 is converted by the light conversion layer 140 and emitted from the first opening 131, the light sensing element 190 can be used to sense the brightness of the light emitted by the first opening 131. In some embodiments, the light sensing layer 193 includes a photodiode, but is not limited thereto.

As shown in FIG. 2, in this embodiment, the third light shielding layer 210 is a metal layer. The first electrode 191 of the light sensing element 190 is integrated with the third light shielding layer 210. That is, the third light shielding layer 210 can also serve as the first electrode 191 of the light sensing element 190 in addition to shielding light. The light sensing layer 193 is in contact with the third light shielding layer 210 and is adjacent to the third opening 211, and the second electrode 192 is located between the interlayer insulating layer 123 and the first light shielding layer 130. In this embodiment, the interlayer insulating layer 123 and the gate insulating layer 122 are located between the second electrode 192 and the light sensing layer 193, and the source S, the drain D, and the second electrode 192 are formed at the same time. In other words, the second conductive layer 125 is patterned to form the source S, the drain D, and the second electrode 192 at the same time. The second electrode 192 penetrates the interlayer insulating layer 123 and the gate insulating layer 122 to connect to the light sensing layer. 193. In some embodiments, the third light shielding layer 210 reflects the light diffused by the first opening 131, and the light sensing element 190 can also sense the light from the third shielding layer. Light reflected by the optical layer 210.

As shown in FIG. 2, in this embodiment, the light emitting device 100 further includes a first insulating layer 220 and a second insulating layer 230. The first insulating layer 220 is located on the third light shielding layer 210, and the first insulating layer 220 contacts the substrate 110 through the third opening 211. The second insulating layer 230 is located on the first insulating layer 220, and the second insulating layer 230 is located between the active device 120 and the first insulating layer 220, the second portion 133 of the first light shielding layer 130 and the first insulating layer 220 And between the light conversion layer 140 and the first insulating layer 220. In some embodiments, the second portion 133 of the first light shielding layer 130 may also penetrate at least one layer of the first insulating layer 220 and the second insulating layer 230.

As shown in FIG. 2, in this embodiment, the light-emitting device 100 further includes an encapsulation layer 240. The encapsulation layer 240 is located on the second shading element and the top electrode 180, and the encapsulation layer 240 may include a glass substrate, an insulating material, etc., but is not limited thereto.

In some embodiments, the thickness of the third light shielding layer 210 is greater than 50 nanometers. In some embodiments, the thickness of the transparent electrode 150 is less than 139 nm. In some embodiments, the thickness of the light conversion layer 140 is greater than 5 micrometers, and the thickness of the color resist layer 141 is less than 1 micrometer.

Please refer to FIG. 3, which is a system block diagram of the light emitting device 100 of FIG. 1. As shown in FIG. 3, in this embodiment, the light emitting device 100 further includes a control module 300. The control module 300 is electrically connected to the light sensing element 190 and the active element 120, and the control module 300 can control the active element 120 To drive the electroluminescent element 170 to emit light. In FIG. 3, the solid arrows between the control module 300, the active element 120, the electroluminescent element 170, and the light sensing element 190 represent electrical connections, and the light sensing element 190, the light conversion layer 140 and the electrical The dotted arrows between the electroluminescent elements 170 indicate optical connections.

In some embodiments, the control module 300 can control the gate G voltage so that the channel The layer 121 is electrically connected or disconnected. When the channel layer 121 is turned on, the control module 300 can apply a voltage or current to the electroluminescent element 170 through the source S, the channel layer 121, the drain D, and the transparent electrode 150 to make the electroluminescent element 170 emit light. For example, when the control module 300 controls the active device 120 to apply a first voltage to the electroluminescent device 170, the electroluminescent device 170 emits light corresponding to the first voltage, and the light emitted by the electroluminescent device 170 has the first voltage. brightness. The light emitted by the electroluminescent element 170 enters the first opening 131 from the second opening 161, is converted by the light conversion layer 140, and then exits from the first opening 131 toward the third opening 211. At this time, a part of the light emitted from the light conversion layer 140 is projected to the light sensing layer 193, and a photocurrent is generated between the first electrode 191 and the second electrode 192, and this photocurrent is fed back to the control module 300, and converted to brightness by the control module 300, that is, the photocurrent feedback from the light sensing element 190 can be regarded as a brightness signal or a reference signal corresponding to the brightness. The control module 300 correspondingly controls the active device 120 and applies the second voltage to the electroluminescent device 170 according to the brightness converted by the brightness signal, so as to drive the electroluminescent device 170 to emit light with the second brightness. According to the brightness signal, the second voltage can be equal to, greater than or less than the first voltage, and accordingly, the second brightness can be equal to, greater than or less than the first brightness. In other words, the control module 300 can determine whether to maintain or adjust the voltage applied to the electroluminescent device 170 by the active device 120 according to the brightness sensed by the light sensing device 190 to maintain or compensate the electroluminescent device 170 The brightness of the light.

For example, when the control module 300 controls the active device 120 to apply a voltage of 3 volts to the electroluminescent device 170, the light emitting brightness of the electroluminescent device 170 is 2 lumens. The control module 300 compares the brightness sensed by the light sensing layer 193 with the expected brightness. The expected brightness corresponds to the light output of the light conversion layer 140 when the first voltage is applied to the electroluminescent element 170. brightness. Assume that the expected brightness is 1.8 lumens, and the brightness sensed by the light sensing layer 193 is 1.5 lumens If the brightness is lower than the expected brightness (for example, there is an error between the thickness of the light conversion layer 140 and the design standard value, which causes the light output loss of the light conversion layer 140), the control module 300 will apply the voltage applied to the electroluminescent element 170 Increasing to 3.5 volts increases the brightness of the electroluminescent element 170 and the brightness of the light conversion layer 140 correspondingly. At this time, the brightness sensed by the light sensing element 190 reaches the expected brightness of 1.8 lumens. If the brightness sensed by the light sensing layer 193 is 1.9 lumens, which is higher than the expected brightness (for example, there is an error between the thickness of the light conversion layer 140 and the design standard value, which causes the light leakage rate of the light conversion layer 140 to increase), then control The module 300 reduces the voltage applied to the electroluminescent element 170 to 2.8 volts, and the light-emitting brightness of the light conversion layer 140 is correspondingly reduced, so that the brightness sensed by the light sensing element 190 reaches the expected brightness of 1.8 lumens. In some embodiments, the control module 300 can also adjust the current to change the brightness of the electroluminescent element 170.

In some embodiments, the light-emitting device 100 is applied to a display panel, and when the same voltage is applied to each electroluminescent element 170, the expected brightness of the light from each light conversion layer 140 is the same, and each display panel The brightness of the pixels should also be the same. However, based on the above-mentioned various errors, the brightness of each pixel of the display panel may be slightly different, resulting in uneven color. Therefore, by each light sensing element 190 respectively sensing the light output brightness of each light conversion layer 140 and feedback the brightness signal, the control module 300 can adjust the application to each electroluminescent element 170 through the active element 120 in real time and respectively. The voltage makes the brightness of each pixel of the display panel reach the expected brightness, thereby avoiding the phenomenon of uneven color.

Please refer to FIG. 4, which is a schematic cross-sectional view of a light emitting device 100 according to a second embodiment of the present invention. The difference between the embodiment of FIG. 4 and FIG. 2 lies in the position of the second electrode 192 of the light sensing element 190 of FIG. 4. In this embodiment, the second electrode 192 is located between the light sensing layer 193 and the interlayer insulating layer 123, and the gate insulating layer 122 is located between the second electrode 192 and the light sensing layer 193, and The second electrode 192 and the gate G are formed at the same time. The first conductive layer 124 is patterned to form the gate G and the second electrode 192 at the same time, and the second electrode 192 passes through the gate insulating layer 122 to connect to the light sensing layer 193.

Please refer to FIG. 5, which is a schematic cross-sectional view of a light emitting device 100 according to a third embodiment of the present invention. The difference between the embodiment of FIG. 5 and FIG. 2 is that the light emitting device 100 of FIG. 5 further includes a second light sensing element 250. In this embodiment, the second light sensing element 250 includes a first electrode 251, a second electrode 252 and a light sensing layer 253. The light sensing layer 253 of the second light sensing element 250 is located between the transparent electrode 150 and the interlayer insulating layer 123, and the light sensing layer 253 is provided corresponding to the second opening 161, and the second light sensing element 250 The first electrode 251 and the second electrode 252 are electrically connected to the light sensing layer 253 respectively. Since there may also be an error between the luminous efficiency of the electroluminescent element 170 and the design standard value, the light output brightness may not match the expected brightness, so the light sensing layer 253 can be used to sense the light output brightness of the electroluminescent element 170, and the second The light sensing element 250 will feedback the corresponding brightness signal to the control module 300 as shown in FIG. 3, and the control module 300 can maintain or adjust the voltage or voltage applied by the active element 120 to the electroluminescent element 170 according to the brightness signal. Current.

As shown in FIG. 5, in this embodiment, the first electrode 251 of the second light sensing element 250 is located between the interlayer insulating layer 123 and the first light shielding layer 130, and the source S, drain D, and light sensing The second electrode 192 of the element 190 and the first electrode 251 of the second light sensing element 250 are simultaneously formed, that is, the second conductive layer 125 is patterned to form the source S, the drain D, and the light sensing element at the same time. The second electrode 192 of 190 and the first electrode 251 of the second light sensing element 250. In this embodiment, the second electrode 252 of the second light sensing element 250 is located between the first light shielding layer 130 and the second light shielding layer 160, and the second electrode 252 of the second light sensing element 250 and the transparent electrode 150 It is simultaneously formed. In some embodiments, the transparent electrode 150 is made of indium tin oxide film. The tin film is first formed on the first light shielding layer 130 and the light conversion layer 140, and the indium tin oxide film is patterned to form the second electrode 252 and the transparent electrode 150 of the second light sensing element 250 at the same time.

Please refer to FIG. 6, which is a schematic cross-sectional view of a light emitting device 100 according to a fourth embodiment of the present invention. The difference between the embodiment of FIG. 6 and FIG. 2 lies in the position of the light sensing element 190 in FIG. 6. In this embodiment, the light sensing layer 193 is adjacent to the side of the first opening 131 away from the transparent electrode 150. For example, the light sensing layer 193 and the color resist layer 141 do not overlap in the normal direction ND of the substrate 110. In this embodiment, the light sensing layer 193 and the channel layer 121 are formed at the same time, and the light sensing layer 193 and the channel layer 121 include the same material, such as polysilicon, but it is not limited thereto. In this embodiment, the first electrode 191 is located between the light sensing layer 193 and the interlayer insulating layer 123, and the second electrode 192 is located between the interlayer insulating layer 123 and the first light shielding layer 130. The first electrode 191 and the gate G are formed at the same time, and the second electrode 192, the source S and the drain D are formed at the same time. The first conductive layer 124 is patterned to form the gate G and the first electrode 191 at the same time, and the second conductive layer 125 is patterned to form the source S, the drain D, and the second electrode 192 at the same time. In this embodiment, the gate insulating layer 122 may not exist between the photo-sensing layer 193 and the interlayer insulating layer 123, that is, the gate insulating layer 122 here will be removed during the manufacturing process, and then the first The gate G of a conductive layer 124 and the first electrode 191, the source S, drain D, and the second electrode 192 of the interlayer insulating layer 123 and the second conductive layer 125, and the first electrode 191 is directly connected to the light sensing layer 193 , And the second electrode 192 penetrates the interlayer insulating layer 123 to connect to the light sensing layer 193.

Please refer to FIG. 7, which is a schematic cross-sectional view of a light emitting device 100 according to a fifth embodiment of the present invention. The difference between the embodiment of FIG. 7 and FIG. 6 lies in the position of the light sensing layer 193 of FIG. 7. In this embodiment, the light sensing layer 193 and the light conversion layer 140 are in the normal direction ND of the substrate 110 Overlap, for example, the color resist layer 141 and the light sensing layer 193 overlap in the normal direction ND of the substrate 110 and contact each other. In addition, the light sensing layer 193 and the channel layer 121 are simultaneously formed, and the light sensing layer 193 and the channel layer 121 include the same material. In this embodiment, the first electrode 191 and the second electrode 192 are located on opposite sides of the first opening 131, the first electrode 191 and the gate electrode G are formed at the same time, and the second electrode 192, the source electrode S and the drain electrode D It is formed at the same time, and the second electrode 192 penetrates the interlayer insulating layer 123 and the gate insulating layer 122 to connect to the photo sensing layer 193.

As shown in FIG. 7, in this embodiment, the light sensing layer 193 can allow the light of the light conversion layer 140 to pass through, and can sense all the light from the light conversion layer 140, so the brightness returned by the light sensing element 190 is The signal has higher accuracy. However, the light sensing layer 193 absorbs part of the light, so that the brightness of the light emitted by the third opening 211 is reduced. In order to take into account the effects of light transmission and light sensing, the thickness of the light sensing layer 193 needs to be controlled within a certain range. In this embodiment, the thickness of the light sensing layer 193 is between 20 nanometers and 500 nanometers. In some embodiments, the thickness of the light sensing layer 193 is 430 nm.

Please refer to FIG. 8, which is a schematic cross-sectional view of a light emitting device 100 according to a sixth embodiment of the present invention. The difference between the embodiment of FIG. 8 and FIG. 2 lies in the position of the light sensing layer 193 of FIG. 8. In this embodiment, the light sensing layer 193 is located in the first opening 131, and the light sensing layer 193 and the light conversion layer 140 are integrated as a whole. In other words, the light conversion layer 140 itself can also serve as a light sensing layer. material. In this embodiment, the first electrode 191 and the gate G are formed at the same time, and the second electrode 192, the source S and the drain D are formed at the same time. In addition, the first electrode 191 is located between the gate insulating layer 122 and the interlayer insulating layer 123, and the first electrode 191 penetrates the first opening 131 to contact one side of the light conversion layer 140. The second electrode 192 is located between the gate insulating layer 122 and the first light shielding layer 130, and the second electrode 192 penetrates the interlayer insulating layer 123 and the first opening 131 and contacts the light conversion layer 140 far away. From the other side of the first electrode 191. In this embodiment, after the light conversion layer 140 receives light from the electroluminescent element 170, a photocurrent is generated between the first electrode 191 and the second electrode 192, and this photocurrent can be regarded as a kind of brightness signal or corresponding brightness. The reference signal and the brightness signal will be fed back to the control module 300 shown in FIG. 3, and the control module 300 can maintain or adjust the voltage or current applied by the active device 120 to the electroluminescent device 170 according to the brightness signal.

In summary, according to the light-emitting device of at least one embodiment of the present invention, the light-emitting luminance of the first opening can be sensed by the light-sensing element, so as to facilitate maintaining or adjusting the active element to drive the electroluminescence according to the luminance. The voltage or current of the element ensures that the brightness of the light-emitting device can meet expectations. When the light-emitting device is applied to a display panel, the light-emitting brightness of the corresponding first opening can be sensed by each light sensing element, so as to ensure that the brightness or color of each pixel of the display panel meets expectations, and to avoid color unevenness The phenomenon.

Although the technical content of the present invention has been disclosed in preferred embodiments as above, it is not intended to limit the present invention. Anyone who is familiar with this technique and makes some changes and modifications without departing from the spirit of the present invention should be covered by the present invention Therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

100 Light-emitting device 110 Substrate 120 Active components 121 Channel layer 122 Gate insulation layer 123 Interlayer insulation layer 124 First conductor layer 125 Second conductor layer 130 First light-shielding layer 131 First opening 132 Part One 133 Part Two 140 Light conversion layer 141 Color resist layer 150 Transparent electrode 160 Second light-shielding layer 161 Second opening 170 Electroluminescent element 171 First transmission layer 172 The second transmission layer 173 Light-emitting layer 180 Top electrode 190 Light sensing element 191 First electrode 192 Second electrode 193 Light sensing layer 210 Third shading layer 211 The third opening 220 First insulation layer 230 Second insulating layer 240 Encapsulation layer D Dip pole G Gate ND Normal direction S Source W11, W12, W21, W22 width

Claims (20)

A light-emitting device includes: a substrate; an active element on the substrate; a first light shielding layer on the active element and including a first opening; a light conversion layer located in the first opening; and a transparent An electrode located on the first light-shielding layer and the light conversion layer and electrically connected to the active element; a second light-shielding layer located on the transparent electrode and including a second opening corresponding to the first opening; an electroluminescence Element located in the second opening, wherein the transparent electrode is located between the first opening and the second opening; a top electrode, wherein the electroluminescent element is located between the top electrode and the transparent electrode; and a light The sensing element includes a first electrode, a second electrode, and a light sensing layer. The light sensing layer is disposed corresponding to the first opening, and the first electrode and the second electrode are electrically connected to the light sensing layer. Measured layer. The light-emitting device according to claim 1, wherein the first electrode is located between the substrate and the active device, and the second electrode is located between the active device and the first light shielding layer. The light-emitting device according to claim 1, further comprising a third light-shielding layer, wherein the third light-shielding layer is located between the substrate and the active device and includes a third opening corresponding to the first opening 口, the first electrode and the third light shielding layer are integrated into one body, and the light sensing layer contacts the third light shielding layer and is adjacent to the third opening. The light-emitting device according to claim 3, wherein the thickness of the third light shielding layer is greater than 50 nm. The light-emitting device according to claim 1, wherein the active device includes: a channel layer on the substrate; a gate electrode on the channel layer; and a gate insulating layer on the gate electrode and the channel layer Between; a source and a drain, respectively, electrically connected to the channel layer; and an interlayer insulating layer located between the source and the gate and between the drain and the gate, wherein the first The light shielding layer includes: a first part substantially covering the active device; and a second part connecting the first part, the second part penetrating the interlayer insulating layer and the gate insulating layer, and the first opening penetrating the the second part. The light emitting device according to claim 5, wherein the first electrode is located between the light sensing layer and the interlayer insulating layer. The light-emitting device according to claim 5, wherein the interlayer insulating layer and the gate insulating layer are located between the second electrode and the photo sensing layer. The light-emitting device according to claim 5, wherein the second electrode is located between the light sensing layer and the interlayer insulating layer. The light-emitting device according to claim 5, further comprising a second light sensing element, the second light sensing element including a first electrode, a second electrode and a light sensing layer, the second light sensing element The light sensing layer of the device is located between the transparent electrode and the interlayer insulating layer and is disposed corresponding to the second opening, and the first electrode and the second electrode of the second light sensing device are electrically connected to the first electrode, respectively The light sensing layer of two light sensing elements. The light-emitting device according to claim 9, wherein the first electrode of the second light sensing element is located between the interlayer insulating layer and the first light shielding layer. The light-emitting device according to claim 9, wherein the second electrode of the second light sensing element is located between the first light-shielding layer and the second light-shielding layer. The light emitting device according to claim 5, wherein the light sensing layer is adjacent to a side of the first opening away from the transparent electrode. The light emitting device according to claim 12, wherein the light sensing layer and the light conversion layer overlap in the normal direction of the substrate. The light emitting device according to claim 13, wherein the thickness of the light sensing layer is between 20 nanometers and 500 nanometers. The light emitting device according to claim 1, wherein the light sensing layer is located in the first opening, and the light sensing layer and the light conversion layer are integrated as a whole. The light-emitting device according to claim 1, wherein the light conversion layer includes a color resist layer, and the color resist layer is located on a side of the first opening away from the transparent electrode. The light emitting device according to claim 16, wherein the thickness of the light conversion layer is greater than 5 micrometers, and the thickness of the color resist layer is less than 1 micrometer. The light emitting device according to claim 1, wherein the width of the side of the second opening away from the transparent electrode is smaller than the width of the side of the second opening close to the transparent electrode, and the second opening is close to a side of the transparent electrode The width of the side is greater than or equal to the width of the side of the first opening close to the transparent electrode. The light-emitting device according to claim 1, wherein the thickness of the transparent electrode is less than 139 nm. The light-emitting device according to claim 1, further comprising a control module, wherein the control module is electrically connected to the light sensing element and the active element, and the control module controls the active element to drive the electroluminescent element Generate light with a first brightness, the light sensing element senses the light emitted from the light conversion layer to generate a brightness signal, and the control module controls the active element according to the brightness signal to drive the electroluminescent element Generate a second brightness.

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