TWI706445B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

There is provided a substrate processing method using a processing chamber that is provided with a first process gas supply region, a first exhaust port through which a first process gas supplied to the first process gas supply region is exhausted, a second process gas supply region, a second exhaust port through which a second process gas supplied to the second process gas supply region is exhausted, and a communication space through which the first exhaust port and the second exhaust port communicate with each other, wherein an exhaust pressure in the first exhaust port is set higher than an exhaust pressure in the second exhaust port by a predetermined pressure so as to perform a substrate process while preventing infiltration of the second process gas into the first exhaust port.

Description

Substrate processing method and substrate processing device

The invention relates to a substrate processing method and a substrate processing device.

In the past, at least two types of reaction gases that react with each other are sequentially supplied to the surface of the substrate and the supply cycle is performed to form a thin film by stacking a large number of reaction product layers. The film forming method includes: a rotating table in a vacuum container The process of placing the substrate on the rotary table and rotating the rotary table; from the first reaction gas supply mechanism and the second reaction gas supply mechanism that are separated from each other in the rotation direction and installed in the vacuum vessel, the surface of the rotary table on the side of the substrate placement area The process of separately supplying the first reaction gas and the second reaction gas; and, the separation gas supply mechanism provided in the separation area between the first reaction gas supply mechanism and the second reaction gas supply mechanism in the rotation direction supplies the separation gas , And on both sides of the rotation direction of the separation gas supply mechanism, the separation gas diffuses into the narrow space between the ceiling surface of the vacuum vessel and the rotating table.

A related film forming method includes: viewing from the rotation center of the spin table, the row of the first exhaust flow path opened between the first processing area and the separation area adjacent to the first processing area on the downstream side in the rotation direction The gas port and the gas port of the second exhaust flow path that opens between the second processing area and the separation area adjacent to the second processing area on the downstream side in the rotation direction as viewed from the rotation center of the spin table, When the reaction gas and the separated gas diffused on both sides of the separation area are exhausted, the first processing area and the second processing area are independently exhausted by these gases; and, the first exhaust flow path The internal and the second exhaust flow path are respectively evacuated independently by the first vacuum exhaust mechanism and the second vacuum exhaust mechanism, and the first reaction area is separated from the first processing area and the second processing area. Gas and second reagent gas The body is independently exhausted. In addition, since the interstitial space that exists under the turntable is extremely narrow, the first reaction gas supplied to the first processing area and the second reaction gas supplied to the second processing area do not communicate under the turntable. On the other hand, exhaust is received independently from the first exhaust port and the second exhaust port.

However, with the diversification of programs in recent years, it is sometimes necessary to perform programs with a gap formed under the rotating table. Specifically, in a high-temperature process, when the wafer is loaded into a vacuum container and placed on a turntable, the wafer warps significantly, and the process cannot be started until the warpage disappears. In order to start the process as soon as possible, the turntable sometimes It is constructed in a liftable manner. When the wafer is placed, the rotating table is lowered to increase the space. After the warpage disappears, the rotating table is raised to execute the program.

In the related procedures, since the program is carried out in the state after the rotating table is raised, a gap may sometimes be generated under the rotating table. The first reaction gas and the second reaction gas are mixed through the gap, making it impossible to perform independent separation. exhaust. Since the first reaction gas and the second reaction gas will react with each other to produce reaction products, it is unnecessary if the first reaction gas and the second reaction gas react near the first exhaust port or near the second exhaust port. The reaction product is generated in the first exhaust port or the second exhaust port, causing the problem of contamination inside the vacuum container.

Therefore, the present invention provides a substrate processing method and a substrate processing apparatus. Even if a gap is generated under the related rotating table, the first and second exhaust ports can be individually and independently exhausted.

A substrate processing method related to one aspect of the present invention uses a processing chamber to perform substrate processing. The processing chamber has: a first processing gas supply area; and a first exhaust port for supplying the first processing gas The first processing gas in the supply area is exhausted; the second processing gas supply area; the second exhaust port is used to exhaust the second processing gas supplied to the second processing gas supply area者; And the communication space, the first exhaust port and the second exhaust port are connected; the exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second exhaust port by a predetermined pressure , To prevent the second processing gas from being mixed into the first exhaust port to perform substrate processing.

A substrate processing apparatus related to other aspects of the present invention has: a processing chamber; The rotating table is installed in the processing chamber, and the substrate can be placed on the surface, and can be raised and lowered; the first and second processing gas supply areas are separated from each other above the rotating table along the circumference of the rotating table; The first and second exhaust ports respectively correspond to the first and second processing gas supply areas and are provided below the rotating table; the first and second pressure regulating valves are used to adjust the first and second pressure regulating valves. The exhaust pressure of the second exhaust port; the separation area is protruding downward from the ceiling surface of the processing chamber, and the first processing gas supply area and the second processing gas supply area are separated above the rotating table The method is set between the first processing gas supply area and the second processing gas supply area; and the control mechanism is controlled in the following manner: when the substrate is placed on the rotating table, the rotating table is lowered When the turntable is rotated for substrate processing, the turntable is raised, and in order to prevent the second processing gas from passing through the first exhaust port and the second exhaust caused by the rising of the turntable The communication space of the port is exhausted from the first exhaust port, and the first exhaust port is controlled so that the exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second exhaust port by a predetermined pressure. And the second pressure regulating valve.

Another aspect of the present invention relates to a substrate processing method that uses a processing chamber for substrate processing; the processing chamber has: a rotating table on which substrates can be placed; above the rotating table, the substrate is separated from each other in the direction of rotation A first source gas supply area for supplying source gas to the substrate, a first reaction gas supply area for reacting with the source gas to produce a reaction product, and a second source gas supply for supplying the source gas Area, and a second reaction gas supply area for supplying the reaction gas; a first exhaust port provided for exhausting the raw material gas supplied to the first raw material gas supply area, and for supplying the first gas 1 The second exhaust port provided for exhausting the reactive gas in the reactive gas supply region, the third exhaust port provided for exhausting the raw material gas supplied to the second raw material gas supply region, and A fourth exhaust port for exhausting the reaction gas supplied to the second reaction gas supply area; and a communication space for communicating the first to fourth exhaust ports; The exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second to fourth exhaust ports by a predetermined pressure, and the reaction gas is prevented from being mixed into the first exhaust port for substrate processing.

Another aspect of the present invention relates to a substrate processing apparatus, including: a processing chamber; a rotating table, which is installed in the processing chamber, can place substrates on the surface, and can be raised and lowered; and rotates along the rotation direction of the rotating table. A first raw material gas supply area for supplying raw gas to the rotating table separated from each other above the table, a first reaction gas supply area for supplying a reaction gas that can react with the raw material gas to produce a reaction product, and a first reaction gas supply area for supplying the raw gas The second source gas supply area and the second reaction gas supply area for supplying the reaction gas; respectively correspond to the first source gas supply area, the first reaction gas supply area, the second source gas supply area, and the second The reactive gas supply area is compared with the first to fourth exhaust ports provided below the rotating table; the first to fourth pressure regulating valves are used to adjust the exhaust pressure of the first to fourth exhaust ports; The separation area protrudes downward from the ceiling surface of the processing chamber, and the first raw material gas supply area, the first reaction gas supply area, the second raw material gas supply area, and the second The reaction gas supply areas are separated from each other in the first raw material gas supply area, the first reaction gas supply area, the second raw gas supply area, and the second reaction gas supply area; the control mechanism is The control is performed in the following manner: when the substrate is placed on the rotating table, the rotating table is lowered, when the rotating table is rotated to perform substrate processing, the rotating table is raised, and in order to prevent the reaction gas from passing through the factor The communication space where the first to fourth exhaust ports communicate with each other generated by the rising of the rotating table is exhausted from the first exhaust port, and the exhaust pressure of the first exhaust port is higher than that of the second exhaust port. The first to fourth pressure regulating valves are controlled in such a way that the exhaust pressure to the fourth exhaust port is higher than the predetermined pressure.

1‧‧‧Vacuum container

2‧‧‧Rotating table

4‧‧‧Convex

5‧‧‧Protrusion

7‧‧‧Heater unit

7a‧‧‧Cover member

10‧‧‧Transfer arm

11‧‧‧Top plate

12‧‧‧Container body

12a‧‧‧Protrusion

13‧‧‧Sealing components

14‧‧‧Bottom

15‧‧‧Transportation port

16‧‧‧Corrugated pipe

17‧‧‧Lifting mechanism

20‧‧‧Box body

21‧‧‧Core Department

22‧‧‧Rotation axis

23‧‧‧Drive

24‧‧‧Concave

31‧‧‧Processing gas nozzle

31a‧‧‧Gas inlet

32‧‧‧Processing gas nozzle

32a‧‧‧Gas inlet

33‧‧‧Gas ejection hole

41‧‧‧Separation gas nozzle

41a‧‧‧Gas inlet

42‧‧‧Separation gas nozzle

42a‧‧‧Gas inlet

42h‧‧‧Gas ejection hole

43‧‧‧Groove

44‧‧‧Ceiling surface

45‧‧‧Ceiling surface

46‧‧‧Bending part

50‧‧‧Gap

51‧‧‧Separation gas supply pipe

52‧‧‧Space

71‧‧‧Cover member

71a‧‧‧Inner member

71b‧‧‧Outside member

72‧‧‧Flushing gas supply pipe

73‧‧‧Flushing gas supply pipe

80‧‧‧Plasma Generator

92‧‧‧Plasma gas nozzle

92a‧‧‧Gas inlet

100‧‧‧Control Department

101‧‧‧Memory Department

102‧‧‧Recording media

310‧‧‧The third processing gas nozzle

320‧‧‧4th process gas nozzle

410‧‧‧Separation gas nozzle

420‧‧‧Separation gas nozzle

481‧‧‧Space

482‧‧‧Space

610‧‧‧First exhaust port

611‧‧‧Exhaust port

620‧‧‧The second exhaust port

621‧‧‧Exhaust port

630‧‧‧Exhaust pipe

631‧‧‧Exhaust pipe

640‧‧‧Vacuum pump

641‧‧‧Vacuum pump

650‧‧‧Automatic pressure control machine

651‧‧‧Automatic pressure controller

C‧‧‧Central area

D‧‧‧Separated area

d1,d2‧‧‧distance

E1‧‧‧First exhaust zone

E2‧‧‧Second exhaust zone

H‧‧‧Separated space

h1‧‧‧Height

P1‧‧‧The first processing area

P2‧‧‧Second processing area

P3‧‧‧3rd processing area

P4‧‧‧4th processing area

W‧‧‧wafer

The attached drawings are incorporated into a part of this specification to show the embodiments of the present disclosure, together with the above general description and the detailed content of the embodiments described later to illustrate the concept of the present disclosure.

Fig. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic perspective view showing the internal structure of the vacuum container of the substrate processing apparatus of FIG. 1. FIG.

3 is a schematic plan view showing the internal structure of the vacuum container of the substrate processing apparatus of FIG. 1.

FIG. 4 is a schematic cross-sectional view of the vacuum container of the substrate processing apparatus of FIG. 1 along the concentric circles of the rotating table arranged in a rotatable manner.

FIG. 5 is another schematic cross-sectional view showing the substrate processing apparatus of FIG. 1. FIG.

Figure 6 is a diagram showing an example of the state after the turntable is lowered.

Fig. 7 is a diagram showing an example of the state after the rotating table is raised.

FIG. 8 is a diagram showing the basic processing conditions of the container body configuration state including the simulation results shown in FIG. 9 and later.

Fig. 9 is a graph showing the first simulation result.

Figure 10 is a graph showing the second simulation result.

Figure 11 is a graph showing the third simulation result.

Figure 12 is a graph showing the fourth simulation result.

Fig. 13 is a diagram for explaining an embodiment of the present invention.

Fig. 14 is a graph showing the result of the embodiment shown in Fig. 13.

Fig. 15 is a graph showing the result of the fifth simulation.

Figure 16 is a graph showing the sixth simulation result.

Figure 17 is a graph showing the seventh simulation result.

Figure 18 is a graph showing the results of the eighth simulation.

Fig. 19 is a diagram showing an example of a substrate processing apparatus according to the second embodiment of the present invention.

Fig. 20 is a diagram showing the results of the first simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 21 is a diagram showing the results of a second simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 22 is a diagram showing the result of the third simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 23 is a diagram showing the result of a fourth simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 24 is a diagram showing the result of the fifth simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 25 is a diagram showing the results of a sixth simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Fig. 26 is a diagram showing the result of a seventh simulation experiment of the substrate processing method related to the second embodiment of the present invention.

Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In the following detailed description, many specific details are given in a manner that can fully understand the present disclosure. However, even without such a detailed description, it is obvious that people in the industry can complete this disclosure. In other examples, in order to avoid difficulty in understanding the various embodiments, well-known methods, procedures, systems, and components are not shown in detail.

[First Embodiment]

1 to 3, the substrate processing apparatus related to the first embodiment of the present invention is provided with: a flat vacuum container 1 having a substantially circular planar shape; and a rotating table 2 installed in the vacuum container 1 Inside, there is a center of rotation in the center of the vacuum container 1. The vacuum container 1 is a processing chamber in which wafers W are housed for substrate processing. The vacuum container 1 has a container body 12 having a cylindrical shape with a bottom, and a top plate 11 which is arranged in an airtight detachable manner on the upper surface of the container body 12 via a sealing member 13 such as an O-ring (FIG. 1 ).

The rotating table 2 is fixed to a cylindrical core 21 with its center, and the core 21 is fixed to the upper end of a rotating shaft 22 extending in the vertical direction. The rotating shaft 22 penetrates through the bottom 14 of the vacuum container 1, and its lower end is installed at a driving part 23 that makes the rotating shaft 22 (FIG. 1) rotate around a vertical axis. The rotating shaft 22 and the driving part 23 are housed in a cylindrical box 20 with an open upper surface. The flange part provided on the upper surface of the box body 20 is air-tightly installed under the bottom 14 of the vacuum container 1 to maintain the airtight state of the inner atmosphere and the outer atmosphere of the box body 20.

On the surface of the turntable 2 as shown in Figs. 2 and 3 along the rotation direction (circumferential direction), there are provided semiconductor wafers (hereinafter referred to as " Wafer") W has a circular recess 24. In addition, the wafer W is shown expediently in only one recess 24 in FIG. 3. this The recess 24 has an inner diameter slightly larger than the diameter of the wafer W, for example, 4 mm, and a depth approximately equal to the thickness of the wafer W. Therefore, if the wafer W is accommodated in the recess 24, the surface of the wafer W and the surface of the turntable 2 (a region where the wafer W is not placed) will be the same height. A through hole (neither shown) is formed on the bottom surface of the recess 24 to support the inner surface of the wafer W so that the wafer W can be raised and lowered, for example, three lift pins can penetrate therethrough.

Figures 2 and 3 are diagrams illustrating the internal structure of the vacuum container 1, and the top plate 11 is omitted for expediency. As shown in FIGS. 2 and 3, above the rotating table 2, there are processing gas nozzles 31, processing gas nozzles 32, separation gas nozzles 41, 42, and plasma gas nozzles 92 made of quartz, respectively, in the vacuum vessel 1. The circumferential direction (the direction of rotation of the rotating table 2 (arrow A in Fig. 3)) is arranged at intervals. In the example shown in the figure, a plasma gas nozzle 92, a separation gas nozzle 41, a processing gas nozzle 31, a separation gas nozzle 42, and a processing gas are sequentially arranged clockwise (the rotation direction of the turntable 2) from the transfer port 15 described later. Nozzle 32. These nozzles 92, 31, 32, 41, 42 are fixed to the gas inlet ports 92a, 31a, 32a, 41a, 42a (Figure 3) that are the base ends of the nozzles 92, 31, 32, 41, 42. The outer peripheral wall of the container body 12 is introduced from the outer peripheral wall of the vacuum container 1 into the vacuum container 1, and is installed so as to extend the rotating table 2 horizontally along the radial direction of the container body 12.

In addition, a plasma generator 80 is provided above the plasma gas nozzle 92 in a simplified manner shown in dashed lines in FIG. 3. The plasma generator 80 only needs to be installed as necessary, or it is not necessary. Therefore, the display is simplified in this embodiment.

The processing gas nozzle 31 is connected to a supply source (not shown) of Si (silicon)-containing gas as the first processing gas via a pipe, a flow regulator, etc., not shown. The processing gas nozzle 32 is connected to a supply source (not shown) of an oxidizing gas as a second processing gas via a pipe, a flow regulator, etc., not shown. The separation gas nozzles 41 and 42 are all connected to a supply source (not shown) of nitrogen (N ₂ ) gas as a separation gas via pipes and flow control valves not shown in the figure.

As the Si-containing gas, organic amino silane gas such as diisopropyl amino silane can be used, and as the oxidizing gas, O ₃ (ozone) gas or O ₂ (oxygen) gas or these mixed gases can be used.

In the processing gas nozzles 31 and 32, a plurality of gas ejection holes 33 that open toward the turntable 2 are arranged along the longitudinal direction of the processing gas nozzles 31 and 32 at intervals of, for example, 10 mm. The area below the processing gas nozzle 31 becomes the first processing area P1 for adsorbing Si-containing gas to the wafer W. The area below the processing gas nozzle 32 becomes a second processing area P2 where the Si-containing gas adsorbed on the wafer W in the first processing area P1 is oxidized. In addition, since the first processing area P1 and the second processing area P2 are areas for supplying the first processing gas and the second processing gas, respectively, they can also be referred to as the first processing gas supply area P1 and the second processing gas supply area P2.

2 and 3, two convex portions 4 are provided in the vacuum container 1. Since the convex portion 4 and the separation gas nozzles 41 and 42 constitute the separation area D, it is attached to the inner surface of the top plate 11 so as to protrude toward the turntable 2 as described later. In addition, the convex portion 4 has a fan-shaped planar shape in which the top portion is cut into an arc shape. In this embodiment, the inner arc is connected to the protrusion 5 (described later), and the outer arc is along the container body of the vacuum container 1 The inner circumference is configured within 12.

FIG. 4 shows the cross section of the vacuum vessel 1 along the concentric circle of the rotating table 2 from the processing gas nozzle 31 to the processing gas nozzle 32. As shown in the figure, since the convex portion 4 is installed on the inner surface of the top plate 11, there is a flat low ceiling surface 44 (first ceiling surface) as the lower surface of the convex portion 4 in the vacuum vessel 1 , And a ceiling surface 45 (second ceiling surface) located on both sides of the ceiling surface 44 in the circumferential direction and higher than the ceiling surface 44. The ceiling surface 44 has a fan-shaped planar shape in which the top is cut into an arc shape. In addition, as shown in the figure, a groove portion 43 formed to extend in the radial direction is formed in the center of the convex portion 4 in the circumferential direction, and the separation gas nozzle 42 is accommodated in the groove portion 43. The other convex portion 4 is also formed with a groove portion 43 in the same manner, and the separation gas nozzle 41 is accommodated there. In addition, processing gas nozzles 31 and 32 are respectively provided in spaces 481 and 482 below the high ceiling surface 45. These processing gas nozzles 31 and 32 are separated from the ceiling surface 45 and provided in the vicinity of the wafer W.

In addition, the separation gas nozzles 41, 42 accommodated in the groove portion 43 of the convex portion 4, and the plurality of gas ejection holes 42h (see FIG. 4) opening to the turntable 2 are along the longitudinal direction of the separation gas nozzles 41, 42 They are arranged at intervals of 10 mm, for example.

The ceiling surface 44 is a separation space H that forms a narrow space with respect to the turntable 2. If N ₂ gas is supplied from the ejection hole 42 h of the separation gas nozzle 42, this N ₂ gas will flow through the separation space H to the space 481 and the space 482. At this time, since the volume of the separation space H is smaller than the volumes of the spaces 481 and 482, the pressure of the separation space H can be higher than the pressures of the spaces 481 and 482 by using N ₂ gas. That is, a high-pressure separation space H is formed between the spaces 481 and 482. In addition, the N ₂ gas system flowing out from the separation space H to the spaces 481 and 482 functions as a countercurrent flow of the Si-containing gas from the first region P1 and the oxidizing gas from the second region P2. Therefore, the Si-containing gas from the first region P1 and the oxidizing gas from the second region P2 are separated by the separation space H. Therefore, it is possible to prevent the Si-containing gas and the oxidizing gas from mixing and reacting in the vacuum container 1.

In addition, the height h1 of the ceiling surface 44 with respect to the upper surface of the turntable 2 takes into account the pressure in the vacuum vessel 1 during film formation, the rotation speed of the turntable ₂ , the supply amount of the supplied separation gas (N ₂ gas), etc. It is better to set a height suitable for making the pressure of the separation space H higher than the pressure of the spaces 481 and 482.

On the other hand, on the lower surface of the top plate 11, there is provided a protruding portion 5 that surrounds the outer periphery of the core portion 21 of the fixed rotating table 2 (FIGS. 1 to 3 ). This protruding portion 5 is continuous with the rotation center side portion of the convex portion 4 in the present embodiment, and its lower surface is formed to be the same height as the ceiling surface 44.

Fig. 1 previously referred to is a cross-sectional view taken along line II' of Fig. 3, showing the area where the ceiling surface 45 is provided. On the other hand, FIG. 5 is a cross-sectional view showing the area where the ceiling surface 44 is provided. As shown in FIG. 5, on the peripheral edge of the fan-shaped convex portion 4 (the outer edge side portion of the vacuum vessel 1 ), a curved portion 46 that is bent in an L shape is formed so as to face the outer end surface of the turntable 2. In the same manner as the convex portion 4, the curved portion 46 suppresses the intrusion of the processing gas from both sides of the separation area D and suppresses the mixing of the two processing gases. The fan-shaped convex portion 4 is provided on the top plate 11, and the top plate 11 can be removed from the container body 12, so there is a slight gap between the outer circumferential surface of the curved portion 46 and the container body 12. The gap between the inner peripheral surface of the curved portion 46 and the outer end surface of the turntable 2 and the gap between the outer peripheral surface of the curved portion 46 and the container body 12 are set to the same size as the height of the ceiling surface 44 with respect to the upper surface of the turntable 2, for example.

The inner peripheral wall of the container body 12 is formed as a vertical surface close to the outer peripheral surface of the curved portion 46 in the separation area D as shown in FIG. 4, and parts other than the separation area D are shown in FIG. The portion where the outer end surface is opposed is recessed toward the outer side of the entire bottom 14. Hereinafter, for expediency of the description, the recessed portion having a substantially rectangular cross-sectional shape is referred to as the exhaust area. Specifically, the exhaust area communicating with the first processing area P1 is referred to as a first exhaust area E1, and the area communicating with the second processing area P2 is referred to as a second exhaust area E2. At the bottom of the first exhaust area E1 and the second exhaust area E2, a first exhaust port 610 and a second exhaust port 620 are respectively formed as shown in FIGS. 1 to 3. The first exhaust port 610 and the second exhaust port 620 are as As shown in FIG. 1 and FIG. 3, they are connected to vacuum pumps 640 and 641 as vacuum exhaust mechanisms via exhaust pipes 630 and 631, respectively. In addition, the exhaust pipe 630 between the first exhaust port 610 and the vacuum pump 640 is provided with an automatic pressure controller (APC, Auto Pressure Controller) 650 as a pressure adjusting mechanism. Similarly, the exhaust pipe 631 between the second exhaust port 620 and the vacuum pump 641 is provided with an automatic pressure controller 651 as a pressure adjustment mechanism, and the first exhaust port 610 and the second exhaust port 620 are exhausted. The pressure can be controlled independently.

The space between the turntable 2 and the bottom 14 of the vacuum vessel 1 is provided with a heater unit 7 as a heating mechanism as shown in FIG. 1 and FIG. 5, and the wafer on the turntable 2 is transferred through the turntable 2 W is heated to the temperature determined by the program recipe (for example, 450°C). On the lower side near the periphery of the turntable 2, in order to divide the atmosphere from the space above the turntable 2 to the exhaust areas E1 and E2 and the atmosphere where the heater unit 7 is located to prevent gas from entering the lower area of the turntable 2 A ring-shaped cover member 71 is provided (Figure 5). The cover member 71 is provided with: an inner member 71a, which is provided near the outer edge of the turntable 2 and the outer peripheral side of the outer edge from below; and an outer member 71b, which is provided on the inner member 71a and the vacuum container 1 between the inner wall surface. The outer member 71b is arranged adjacent to the curved portion 46 in the separation area D below the curved portion 46 formed by the outer edge of the convex portion 4, and the inner member 71a is arranged below the outer edge of the turntable 2 (and relative to the outer edge). Slightly below the outer part) is to surround the heater unit 7 all around.

The bottom 14 near the center of rotation with respect to the space where the heater unit 7 is arranged protrudes upward as a protrusion 12a so as to be close to the core 21 near the center of the lower surface of the turntable 2. A narrow space is formed between the protruding portion 12 a and the core portion 21, and the gap between the inner peripheral surface of the through hole of the rotating shaft 22 that penetrates the bottom 14 and the rotating shaft 22 is narrow, and these narrow spaces are connected to the case 20. In addition, the box body 20 is provided with a flushing gas supply pipe 72 for supplying N ₂ gas of the flushing gas to the narrow space for flushing. In addition, on the bottom 14 of the vacuum vessel 1, a plurality of flushing gas supply pipes 73 for flushing the arrangement space of the heater unit 7 are provided at predetermined angular intervals below the heater unit 7 (a flushing gas is shown in FIG. 5). Supply pipe 73). In addition, a cover member 7a covering the entire circumference from the inner peripheral wall of the outer member 71b (the upper surface of the inner member 71a) to the upper end of the protruding portion 12a is provided between the heater unit 7 and the turntable 2 to The intrusion of gas into the area where the heater unit 7 is provided is suppressed. The cover member 7a can be made of, for example, quartz.

In addition, a separation gas supply pipe 51 is connected to the center of the top plate 11 of the vacuum vessel 1 to supply N ₂ gas as a separation gas to the space 52 between the top plate 11 and the core 21. The separation gas system supplied to this space 52 is sprayed toward the periphery along the surface of the wafer placement area side of the turntable 2 through the narrow gap 50 between the protrusion 5 and the turntable 2. The space 50 can be maintained at a higher pressure than the space 481 and the space 482 by separating gas. Therefore, the space 50 can prevent the Si-containing gas supplied to the first processing region P1 and the oxidizing gas supplied to the second processing region P2 from passing through the central region C and being mixed. That is, the space 50 (or the central area C) can perform the same function as the separation space H (or the separation area D).

Furthermore, as shown in FIG. 3, on the side wall of the vacuum vessel 1, a transfer port 15 for transferring the substrate, that is, the wafer W, between the transfer arm 10 and the turntable 2 on the outside is formed. This transfer port 15 is opened and closed by a gate valve not shown. In addition, the recessed portion 24 in the turntable 2 as the wafer placement area is located close to the transfer port 15 to transfer the wafer W with the transfer arm 10. Therefore, the lower side of the turntable 2 corresponds to the transfer position The portion is provided with a through recess 24 for transporting lift pins and their lift mechanisms (none of which are shown) to lift the wafer W from the inner surface.

In addition, the substrate processing apparatus of this embodiment is provided with a control unit 100 constituted by a computer for controlling the operation of the entire apparatus as shown in FIG. 1, and the memory of the control unit 100 is stored in the memory of the control unit 100. Under control, the substrate processing apparatus implements the program of the substrate processing method described later. This program is organized into a group of steps by implementing the substrate processing method described below, and is stored in the recording medium 102 such as hard disk, optical disk, optical disk, memory card, floppy disk, etc., and is read to the memory section by a predetermined reading device 101, and installed in the control unit 100.

Furthermore, as shown in FIG. 1, a bellows 16 is provided between the bottom 14 of the container body 12 around the rotating shaft 22 and the box body 20. In addition, an elevating mechanism 17 capable of raising and lowering the rotating table 2 to change the height of the rotating table 2 is provided on the outer side of the bellows 16. The related lifting mechanism 17 causes the rotating table 2 to lift, and corresponds to the lifting of the rotating table 2 to make the bellows 16 expand and contract, so that the distance between the ceiling surface 45 and the wafer W can be changed. By arranging the bellows 16 and the elevating mechanism 17 in one of the components constituting the rotating shaft of the turntable 2, the distance between the ceiling surface 45 and the wafer W can be changed while keeping the processing surface of the wafer W parallel. . In addition, the elevating mechanism 17 only needs to be capable of raising and lowering the rotating table 2 and can be realized by various configurations, for example, a structure in which the length of the rotating shaft 22 is extended and contracted by a gear or the like.

The reason for installing the related lifting mechanism 17 is that when the vacuum container 1 is kept at a high temperature of 400°C or higher and the substrate is processed, even if the heater unit 7 is stopped for carrying out and carrying the wafer W, the vacuum container 1 The inside is still maintained at a high temperature. Therefore, when the wafer W is loaded into the vacuum container 1 and placed on the turntable 2, the wafer W may warp significantly.

FIG. 6 is a partial enlarged view showing an example of the lowered state of the rotating table 2. As shown in FIGS. 5 and 6, when the wafer W is placed on the turntable 2, the turntable 2 is lowered in advance. Even if the wafer W is warped, it still has a surface that does not touch the ceiling surface 44. The space of distance d1 (the ceiling surface 44 and the lower surface of the protrusion 5 have the same height). On the other hand, when all the wafers W are restored and the turntable 2 is rotated to apply the film forming process to the wafer W, the gap between the wafer W and the ceiling surface 44 must be kept narrow, and the turntable 2 In the ascending state, the film forming process is performed. By providing the lifting mechanism 17 of the turntable 2 in this way, it is possible to prevent the wafer W from being damaged due to the contact between the warped wafer W and the ceiling surfaces 44 and 45. In addition, even if the wafer W placed on the turntable 2 is still in a warped state, the turntable 2 can be rotated intermittently without waiting for the warpage to recover, and the wafers W can be placed in sequence In the plural recesses 24, productivity can be improved. That is, since the space elasticity is maintained between the turntable 2 and the ceiling surfaces 44, 45, one wafer W can be placed on the recessed portion 24 of the turntable 2, and then the wafer Before the warpage of W is restored, the next wafer W is placed on the next recess 24. Thereby, the overall time for placing a plurality of wafers W on the turntable 2 can be shortened, and the productivity can be improved. In addition, the distance d1 of the space between the rotating table 2 and the ceiling surface 44 is in the range of 8 to 18 mm, preferably set in the range of 10 to 15 mm, and can be specifically set to, for example, 13 mm.

As shown in Figures 5 and 6, when the turntable 2 is lowered, a space with a distance d1 from the ceiling surface 44 is formed above the turntable 2, and the distance between the bottom surface of the turntable 2 and the cover member 7a is The distance d2 becomes very narrow, for example, about 3 mm. In this state, the processing gas hardly passes under the turntable 2, and the second processing gas supplied to the second processing area P2 hardly passes under the turntable 2 to reach the first processing area P1 and exits from the first exhaust port. 610 is exhausted.

FIG. 7 is a diagram showing an example of the state after the turntable 2 is raised. As shown in FIG. 7, when the turntable 2 rises, the distance d1 between the turntable 2 and the processing gas nozzles 31, 32 becomes very narrow, for example, about 3 mm, and the distance between the turntable 2 and the cover member 7a The distance d2 becomes larger, It becomes a space where the processing gas can communicate. As described above, if the bottom surface of the rotating table 2 is initially a gap of 3 mm (distance d2), and after it rises, it becomes a gap of 3 mm (distance d1) from the ceiling surface 44, the distance d2 between the cover member 7a under the rotating table 2 It will be about 8-18mm (for example, 13mm). If the wafer W is processed in such a state as film formation, it will happen that the processing gas will communicate with the communication space formed under the turntable 2, and the second processing gas will reach the first processing area P1 and move from the first row The air port 610 is exposed to the phenomenon of exhaust. In this way, the first processing gas and the second processing gas undergo a CVD (Chemical Vapor Deposition) reaction, and undesirable reaction products such as silicon oxide films are deposited in the first exhaust port 610.

In order to prevent related phenomena, the substrate processing method and substrate processing apparatus related to the embodiment of the present invention are controlled by adjusting the exhaust pressure of the first exhaust port 610 and the second exhaust port 620 so that the second processing gas does not escape from Exhaust is exhausted from the first exhaust port 610 but is exhausted from the second exhaust port 620. Hereinafter, the specific content will be explained using simulation results.

FIG. 8 is a diagram showing basic processing conditions of the disposition state of the container body 12 including the simulation results shown in FIG. 9 and later. As shown in FIG. 8, the container body 12 is arranged in such a way that the conveyance port 15 is arranged on the lower side of the paper, the first exhaust port 610 is arranged on the upper right, and the second exhaust port 620 is arranged on the upper left, showing the subsequent simulation result. In addition, from the processing gas nozzle 31, diisopropylaminosilane gas, which is a kind of Si-containing gas, is supplied at a flow rate of 300 sccm (0.3 slm) together with Ar gas as a carrier gas (Ar gas is 1000 sccm (1 slm)) flow). In addition, ozone gas was supplied from the processing gas nozzle 32 at a flow rate of 6 slm. Furthermore, the plasma gas nozzle 92 is supplied as a mixed gas at a flow rate of 15 slm of Ar gas and 75 sccm of oxygen gas. In addition, the pressure in the vacuum container 1 is 2 Torr, and the temperature of the wafer W is set at 400°C. In addition, the separation gas supply pipe 51 above the rotating shaft 22 is supplied with Ar gas at 3 slm, and the flushing gas supply pipe 72 is supplied with Ar gas at 10 slm. Ar gas was supplied from the separation gas nozzles 41 and 42 at 5 slm.

Here, the processing gas nozzle 31 is in the first processing area P1, the processing gas nozzle 32 is in the second processing area P2, and the second processing area P2 has a width three times or more the first processing area P1. For example, the opening angle of the first processing area P1 is about 30 to 60 degrees, while the opening angle of the second processing area P2 is about 120 to 270 degrees. Typically, the first processing area P1 is set at 75 degrees. , The second processing area P2 is set at about 165 degrees. In addition, the first and second exhaust ports 610, 620 are in the rotation direction of the turntable 2 in the first and second processing regions P1, P2 At the downstream end, since the processing gas nozzle 32 is located at the upstream end of the second processing area P2, the distance between the processing gas nozzle 32 and the first exhaust port 610 is smaller than the distance between the processing gas nozzle 32 and the second exhaust port 620.

From the relevant basic conditions, the conditions including the exhaust pressure of the first and second exhaust ports 610 and 620 are changed. For the ozone gas supplied by the processing gas nozzle 32 and the diisopropyl group supplied by the processing gas nozzle 31 The flow distribution of aminosilane gas was simulated.

9 is a diagram showing the simulation results of the state where the exhaust pressures of the first and second exhaust ports 610 and 620 are both 2 Torr, and the Ar gas supply amount from the flushing gas supply pipe 720 below the rotating shaft 22 is reduced to 1.8 slm . FIG. 9(a) is a graph showing the simulation result of the oxygen concentration on the rotating table 2, and FIG. 9(b) is a graph showing the simulation result of the oxygen concentration under the rotating table 2. In addition, the area where the oxygen concentration is detected with high concentration is displayed as level A, the area where the oxygen concentration is not clearly detected as level B, and the area where the oxygen concentration is hardly detected as level C.

As shown in FIG. 9(a), an oxygen concentration of 60% was detected at the first exhaust port 610 on the turntable 2, and it was confirmed that the ozone gas was mixed into the first exhaust port 610 in a small amount.

On the other hand, as shown in FIG. 9(b), it can be seen that the ozone gas also reaches the second exhaust port 620 under the turntable 2 and also reaches the first exhaust port 610 at the same time. That is, all ozone gas should be exhausted from the second exhaust port 620, but a considerable amount is exhausted from the first exhaust port 610.

FIG. 9(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and FIG. 9(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2. In addition, the area where the concentration of diisopropylaminosilane is detected at a high concentration is displayed as grade A, and the area where the concentration of diisopropylaminosilane is not clearly detected is displayed as grade B, and almost no diisopropyl is detected. The area of aminosilane concentration is shown as grade C.

As shown in FIG. 9( c ), it can be seen that on the turntable 2, diisopropylaminosilane gas is supplied to the first processing region P1 and appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 9(d), it can be seen that even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, it can be seen that when the exhaust pressures of the first exhaust port 610 and the second exhaust port 620 are also 2 Torr, the ozone gas will be mixed into the first exhaust port 610 under the turntable 2.

10 is a diagram showing the simulation results of the state where the exhaust pressures of the first and second exhaust ports 610 and 620 are both 2 Torr, and the supply amount of Ar gas from the flushing gas supply pipe 72 under the rotating shaft 22 is increased to 10 slm. FIG. 10(a) is a graph showing the simulation result of the oxygen concentration on the rotating table 2, and FIG. 10(b) is a graph showing the simulation result of the oxygen concentration below the rotating table 2. In addition, similar to Fig. 9(a) and (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as level B, and almost no oxygen concentration is detected. The area is displayed as level C.

As shown in Fig. 10(a), on the turntable 2, an oxygen concentration of 40% is detected at the first exhaust port 610. It can be seen that by increasing the flow rate of Ar gas from below the rotating shaft 22, the mixing of some ozone gas into the first exhaust port 610 can be reduced compared to the case of FIG. 9(a). However, there is still a small amount of mixing into the first exhaust port 610.

In addition, as shown in FIG. 10(b), it can be seen that under the turntable 2 compared to the case of FIG. 9(b), the dispersion of oxygen concentration is reduced, but the ozone gas still reaches the first and second exhaust ports 610, Both sides of 620. That is, originally all ozone gas should be exhausted from the second exhaust port 620, but as in the case of FIG. 9(b), a considerable amount of the exhaust gas is received from the first exhaust port 610.

FIG. 10(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and FIG. 10(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2. In addition, similar to Figure 9(c) and (d), the area where the concentration of diisopropylaminosilane is detected at a high concentration is shown as level A, and the area where the concentration of diisopropylaminosilane is not clearly detected is shown It is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 10( c ), it can be seen that on the turntable 2, diisopropylaminosilane gas is supplied to the first processing region P1 and exhausted appropriately from the first exhaust port 610.

In addition, as shown in FIG. 10(d), it can be seen that even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, it can be seen that when the exhaust pressure of the first exhaust port 610 and the second exhaust port 620 are also 2 Torr, even if the amount of flushing gas supplied from below the rotating shaft 22 is increased, below the rotating table 2, Ozone gas will still be mixed into the first exhaust port 610.

FIG. 11 is a graph showing the simulation results of the state where the exhaust pressure of the first exhaust port 610 is set to 2.1 Torr, the exhaust pressure of the second exhaust port 620 is set to 2 Torr, and the pressure difference of 0.1 Torr is set. Figure 11(a) is a graph showing the simulation results of the oxygen concentration on the turntable 2, and Figure 11(b) shows the bottom of the turntable 2 Figure of the simulated results of the oxygen concentration. In addition, as in Fig. 9(a), (b) and Fig. 10(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in Fig. 11(a), it can be seen that on the turntable 2, the oxygen concentration at the first exhaust port 610 is only detected at the level of B, and the mixing is not clearly seen.

In addition, as shown in FIG. 11(b), it can be seen that although the dispersion of the oxygen concentration under the turntable 2 is reduced compared to the case of FIG. 10(b), the ozone gas also reaches the first exhaust port 610 in a small amount. That is, all ozone gas should be exhausted from the second exhaust port 620, but a small amount of ozone gas is exhausted from the first exhaust port 610.

Fig. 11(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and Fig. 11(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2 . In addition, as in Fig. 9(c), (d) and Fig. 10(c), (d), the area where the concentration of diisopropylaminosilane is detected at a high concentration is displayed as grade A, and the second is not clearly detected. The area where the concentration of isopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 11( c ), it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P1 and appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 11(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, it can be seen that the exhaust pressure of the first exhaust port 610 is set to 2.1 Torr, the exhaust pressure of the second exhaust port 620 is set to 2 Torr, and the pressure difference of 0.1 Torr is set. Although improvement is seen, A small amount of ozone gas is mixed into the first exhaust port 610 under the rotating table 2.

12 is a diagram showing the simulation results of the state where the exhaust pressure of the first exhaust port 610 is set to 2.2 Torr, the exhaust pressure of the second exhaust port 620 is set to 2 Torr, and the pressure difference of 0.2 Torr is set. FIG. 12(a) is a graph showing the simulation result of the oxygen concentration on the rotating table 2, and FIG. 12(b) is a graph showing the simulation result of the oxygen concentration under the rotating table 2. In addition, as in Figures 9(a), (b) and even Figures 11(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in FIG. 12(a), it can be seen that on the turntable 2, only the oxygen concentration of the level C is detected at the first exhaust port 610, and it is in a state where there is almost no mixing.

In addition, as shown in FIG. 12( b ), even under the turntable 2, the ozone gas does not reach the first exhaust port 610, but only reaches the second exhaust port 620. In this way, it can be seen that the ozone gas as the second processing gas is exhausted only from the second exhaust port 620, and the original state is achieved.

Fig. 12(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and Fig. 12(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2 . In addition, as in Figure 9(c), (d) and even Figure 11(c), (d), the area where the concentration of diisopropylaminosilane is detected at a high concentration is displayed as level A, and no obvious detection The area where the concentration of diisopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 12(c), it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P1 and is appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 12(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, the exhaust pressure of the first exhaust port 610 is set to 2.2 Torr, the exhaust pressure of the second exhaust port 620 is set to 2 Torr, and the pressure difference of 0.2 Torr can be set to prevent the pressure under the turntable 2. Ozone gas is mixed into the first exhaust port 610.

FIG. 13 is used to illustrate that 6 wafers W are placed on the turntable 2 when the turntable 2 is not rotating, and the exhaust pressure conditions of the first and second exhaust ports 610, 620 are changed to perform A diagram of an embodiment of film processing. FIG. 13(a) is a diagram showing the arrangement position of the wafer W, and FIG. 13(b) is a diagram showing the film thickness measurement points.

As shown in Figure 13(a), the conveyance port 15 is arranged on the lower side, the first exhaust port 610 is arranged on the upper right, the second exhaust port 620 is arranged on the upper left, the processing gas nozzle 31 is arranged on the upper right, and the processing gas nozzle 31 is arranged on the lower right. The state of the processing gas nozzle 32 was simulated.

In addition, as shown in Figure 13(b), 49 film thickness measurement points from P1 to P49 are set. The film thickness measurement points are arranged in three rows in the radial direction, and individual rows are almost completely arranged at 360 degrees. In addition, as shown in FIG. 13(a), the first exhaust port 610 is in the vicinity of the film thickness measurement point P44.

FIG. 14 is a graph showing the result of the embodiment shown in FIG. 13. As shown in Figure 14, when the exhaust pressure of the first exhaust port 610 and the second exhaust port 620 are also set to 1.8 Torr, the film thickness measurement The film thickness near the fixed points P42~P46 will increase. Since it is near the first exhaust port 610, this means that a CVD reaction has occurred near the first exhaust port 610.

On the other hand, when the exhaust pressure of the first exhaust port 610 is set to 2.0 Torr and the exhaust pressure of the second exhaust port 620 is set to 1.8 Torr, it will not be possible even in the vicinity of the film thickness measurement points P42~P46. Increase the film thickness without any film formation. This means that the second processing gas is not mixed into the first exhaust port 610.

In this way, it can be seen from this embodiment that when the exhaust pressure of the first exhaust port 610 and the exhaust pressure of the second exhaust port 620 are set to around 2.0 Torr, by setting a 10% pressure difference of 0.2 Torr By making the exhaust pressure of the first exhaust port 610 higher than the exhaust pressure of the second exhaust port 620, the mixed exhaust of the second processing gas from the first exhaust port 610 can be prevented.

FIG. 15 shows a simulation result diagram when the exhaust pressures of the first and second exhaust ports 610 and 620 are all set to 4 Torr and the pressure difference is not set. FIG. 15(a) is a graph showing the simulation result of the oxygen concentration on the rotating table 2, and FIG. 15(b) is a graph showing the simulation result of the oxygen concentration under the rotating table 2. In addition, similar to Figures 9(a), (b) and even Figures 12(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in FIG. 15(a), it can be seen that on the turntable 2, the oxygen concentration at the first exhaust port 610 is only detected at the level B, and the mixing is not clearly seen.

On the other hand, as shown in FIG. 15(b), it can be seen that the ozone gas reaches the second exhaust port 620 under the turntable 2, but also reaches the vicinity of the first exhaust port 610 at the same time. That is, all ozone gas should be exhausted from the second exhaust port 620, but it is in a state where it can also be exhausted from the first exhaust port 610.

Fig. 15(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and Fig. 15(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2 . In addition, similar to Figure 9(c), (d) and Figure 12(c), (d), the area where the high concentration of diisopropylaminosilane concentration is detected is displayed as level A, and no obvious detection The area where the concentration of diisopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 15(c), it can be seen that on the turntable 2, the diisopropylaminosilane gas system is supplied to the first processing zone P1 and exhausted appropriately from the first exhaust port 610.

In addition, as shown in FIG. 15(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, it can be seen that when the exhaust pressures of the first and second exhaust ports 610 and 620 are also set to 4 Torr and no pressure difference is set, there is no problem on the rotating table 2, but under the rotating table 2, do The ozone gas, which is the second processing gas, may be mixed into the first exhaust port 610.

16 is a diagram showing the simulation results of the state where the exhaust pressure of the first exhaust port 610 is set to 4.075 Torr, the exhaust pressure of the second exhaust port 620 is set to 4 Torr, and the pressure difference of 0.75 Torr is set. FIG. 16(a) is a graph showing the simulation result of the oxygen concentration on the rotating table 2, and FIG. 16(b) is a graph showing the simulation result of the oxygen concentration under the rotating table 2. In addition, similar to Figures 9(a), (b) and even Figures 12(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in FIG. 16(a), it can be seen that on the turntable 2, only the oxygen concentration of level C is detected at the first exhaust port 610, and it is in a state where there is almost no contamination.

In addition, as shown in FIG. 16( b ), even under the turntable 2, the ozone gas does not reach the first exhaust port 610, but only reaches the second exhaust port 620. In this way, it can be seen that the ozone gas as the second processing gas is exhausted only from the second exhaust port 620, and the original state is achieved.

Fig. 16(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and Fig. 16(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2 . In addition, similar to Figure 9(c), (d) and Figure 12(c), (d), the area where the high concentration of diisopropylaminosilane concentration is detected is displayed as level A, and no obvious detection The area where the concentration of diisopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 16(c), it can be seen that on the turntable 2, the diisopropylaminosilane gas system is supplied to the first processing region P1 and is appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 16(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, the exhaust pressure of the first exhaust port 610 is set to 4.075 Torr, the exhaust pressure of the second exhaust port 620 is set to 4 Torr, and a pressure difference of 0.75 Torr is set at an exhaust pressure of about 4 Torr In this case, it is possible to prevent ozone gas from being mixed into the first exhaust port 610 under the turntable 2.

FIG. 17 is a diagram showing the simulation results of the case where the exhaust pressures of the first and second exhaust ports 610 and 620 are both set to 7 Torr and no pressure difference is set. In terms of other film forming conditions, the supply amount of Ar gas from the flushing gas supply pipe 72 was reduced to 6 slm, and the supply amount of Ar gas from the separation gas nozzles 41 and 42 was increased to 8 slm. FIG. 17(a) is a graph of the simulation result of the oxygen concentration on the turntable 2, and FIG. 17(b) is a graph of the simulation result of the oxygen concentration below the turntable 2. In addition, similar to Figures 9(a), (b) and even Figures 12(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in FIG. 17(a), it can be seen that on the turntable 2, the oxygen concentration at the first exhaust port 610 is only detected at level C, and it is in a state where there is almost no mixing.

On the other hand, as shown in FIG. 17(b), it can be seen that the ozone gas reaches the second exhaust port 620 under the turntable 2 but also reaches the vicinity of the first exhaust port 610 at the same time. In other words, all ozone gas should be exhausted from the second exhaust port 620, but it is also in a state of receiving exhaust from the first exhaust port 610.

FIG. 17(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and FIG. 17(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2. In addition, similar to Figure 9(c), (d) and Figure 12(c), (d), the area where the high concentration of diisopropylaminosilane concentration is detected is displayed as level A, and no obvious detection The area where the concentration of diisopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 17(c), it can be seen that on the turntable 2, the diisopropylaminosilane gas is supplied to the first processing region P1 and is appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 17(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, it can be seen that when the exhaust pressures of the first and second exhaust ports 610 and 620 are also set to 7 Torr and no pressure difference is set, there is no problem on the turntable 2, but it is below the turntable 2. The ozone gas used as the second processing gas may be mixed into the first exhaust port 610.

FIG. 18 is a diagram showing the simulation results of the state where the exhaust pressure of the first exhaust port 610 is set to 7.02 Torr, the exhaust pressure of the second exhaust port 620 is set to 7 Torr, and the pressure difference of 0.02 Torr is set. In terms of other film forming conditions, the supply amount of Ar gas from the flushing gas supply pipe 72 was reduced to 6 slm, and the supply amount of Ar gas from the separation gas nozzles 41 and 42 was increased to 8 slm. FIG. 18(a) is a graph of the simulation result of the oxygen concentration on the turntable 2, and FIG. 18(b) is a graph of the simulation result of the oxygen concentration below the turntable 2. In addition, similar to Figures 9(a), (b) and even Figures 12(a), (b), the area where the high concentration of oxygen concentration is detected is displayed as level A, and the area where the oxygen concentration is not clearly detected is displayed as Level B shows an area where almost no oxygen concentration is detected as level C.

As shown in FIG. 18(a), it can be seen that on the turntable 2, only the oxygen concentration of the level C is detected at the first exhaust port 610, and it is in a state where there is almost no mixing.

In addition, as shown in FIG. 18( b ), even under the turntable 2, the ozone gas does not reach the first exhaust port 610, but only reaches the second exhaust port 620. In this way, it can be seen that the ozone gas as the second processing gas is exhausted only from the second exhaust port 620, and the original state is achieved.

FIG. 18(c) is a graph showing the simulation result of the concentration of diisopropylaminosilane on the rotating table 2, and FIG. 18(d) is a graph showing the simulation result of the concentration of diisopropylaminosilane under the rotating table 2. In addition, similar to Figure 9(c), (d) and Figure 12(c), (d), the area where the high concentration of diisopropylaminosilane concentration is detected is displayed as level A, and no obvious detection The area where the concentration of diisopropylaminosilane is shown as grade B, and the area where the concentration of diisopropylaminosilane is hardly detected is shown as grade C.

As shown in FIG. 18( c ), it can be seen that on the turntable 2, diisopropylaminosilane gas is supplied to the first processing region P1 and appropriately exhausted from the first exhaust port 610.

In addition, as shown in FIG. 18(d), even under the turntable 2, the concentration of the diisopropylaminosilane gas at the first exhaust port 610 is level B, which is a level without problems.

In this way, the exhaust pressure of the first exhaust port 610 is set to 7.02 Torr, the exhaust pressure of the second exhaust port 620 is set to 7 Torr, and a pressure difference of 0.02 Torr is set at an exhaust pressure of about 7 Torr In this case, it is possible to prevent ozone gas from being mixed into the first exhaust port 610 below the turntable 2.

In this way, as illustrated in FIGS. 12 to 14, 16 and 18, the higher the exhaust pressure of the first and second exhaust ports 610 and 620, the higher the exhaust pressure of the first exhaust port 610 and The second exhaust port 620 has a small pressure difference between the exhaust pressure and sufficient independent exhaust effect of the processing gas can be obtained.

The simulation test shows that these pressures are correlated with the pressure in the vacuum vessel 1. Specifically, as the pressure-dependent condition of the vacuum vessel 1, it is preferable that when the pressure in the vacuum vessel 1 is 1 to 3 Torr, the exhaust pressure of the first exhaust port 610 is set to be lower than that of the second exhaust port 620. The exhaust pressure is higher than the pressure range of 0.1~0.3 Torr. When the pressure in the vacuum vessel 1 is 3~5 Torr, the exhaust pressure of the first exhaust port 610 is set to be 0.05 higher than the exhaust pressure of the second exhaust port 620 The pressure range of ~0.1 Torr. When the pressure in the vacuum vessel 1 is 5~10 Torr, the exhaust pressure of the first exhaust port 610 is set to be 0.01~0.05 Torr higher than the exhaust pressure of the second exhaust port 620 range.

In addition, the setting of the exhaust pressure of the first and second exhaust ports 610, 620 can also be performed by the control unit 100 controlling the pressure setting values of the automatic pressure controllers 651, 652. The control unit 100 can also control the pressure and temperature in the vacuum container 1. In addition, the control unit 100 can also control the raising and lowering actions of the turntable 2, so the substrate processing method related to the embodiment of the present invention can be implemented by the control performed by the control unit 100. In addition, the operation of the control unit 100 can be specified by a recipe, and the recipe can be supplied in a state of being recorded on the recording medium 102 or the like in the form of a computer program, and installed in the memory unit 101.

Next, the substrate processing method related to the first embodiment of the present invention will be described by taking a case where the substrate processing apparatus described above is used as an example. Therefore, it is appropriate to refer to the diagrams that have been seen so far.

First, when the turntable 2 is completely lowered, a gate valve (not shown) is opened, and the transfer arm 10 is used from the outside to transfer the wafer W into the recess 24 of the turntable 2 through the transfer port 15 (FIG. 3 ). The lowering of the turntable 2 can also be performed by the control unit 100 controlling the lifting mechanism 17. This transfer is carried out by raising and lowering a lift pin (not shown) from the bottom side of the vacuum container 1 through the through hole of the bottom surface of the recess 24 when the recess 24 stops at a position close to the conveying port 15. The transfer of the wafer W is performed by the turntable 2 intermittently rotating, and the wafer W is placed in the five recesses 24 of the turntable 2 respectively. At this time, although the wafer W may warp, since the turntable 2 has been lowered and a space is formed above, the turntable 2 is sequentially rotated intermittently before waiting for the warpage of the wafer W to converge. A plurality of wafers W are placed on the recess 24. After the placement of the wafer W is completed and the warpage of the wafer W is sufficiently reduced, the control unit 100 controls the lifting mechanism 17 to raise the turntable 2 so that the turntable 2 stops at a suitable position for substrate processing.

After closing the gate valve, the vacuum container 1 is exhausted to the lowest vacuum degree by the vacuum pump 640, and Ar gas or N ₂ gas as the separation gas is ejected from the separation gas nozzles 41 and 42 at a predetermined flow rate, and the separation gas is supplied The pipe 51 and the flushing gas supply pipes 72 and 73 also eject Ar gas or N ₂ gas at a predetermined flow rate. Along with this, the automatic pressure controllers 650 and 651 are used to adjust the inside of the vacuum vessel 1 to the pre-set processing pressure, and the exhaust port is set so that the first exhaust port 610 and the second exhaust port 620 have an appropriate pressure difference. Air pressure. As mentioned above, an appropriate pressure difference is set in accordance with the set pressure in the vacuum vessel 1.

In addition, when an adsorbing raw material gas is supplied from the processing gas nozzle 31, and a reaction gas that reacts with the raw material gas such as oxidizing gas and nitriding gas is supplied from the processing gas nozzle 32, it corresponds to the setting of the processing gas nozzle 31 The exhaust pressure of the first exhaust port 610 is higher than the exhaust pressure of the second exhaust port 620. Since the raw material gases such as Si-containing gas and Ti-containing gas are heavy adsorbent gases, they will hardly reach the second exhaust port 620, while reactive gases such as oxidizing gas and nitriding gas have diffusivity due to their light weight. It will fully reach the first exhaust port 610. In addition, when the reaction gas is supplied from the processing gas nozzle 31 and the raw material gas is supplied from the processing gas nozzle 32, it goes without saying that the pressure relationship between the first exhaust port 610 and the second exhaust port 620 is reversed. In addition, the pressure-dependent conditions are as described above.

Next, while the turntable 2 is rotated clockwise at a rotation speed of, for example, 20 rpm, the heater unit 7 heats the wafer W to, for example, 400°C.

After that, Si-containing gas and O ₃ gas are ejected from the processing gas nozzles 31 and 32, respectively. In addition, the mixed gas of Ar gas, O ₂ gas, and H ₂ gas mixed at a predetermined flow ratio can be supplied from the plasma gas nozzle 92 into the vacuum vessel 1 as necessary, and the plasma generator 80 can be supplied from the high-frequency power supply. The antenna supplies high frequency power with, for example, 700W of power. In this way, plasma is generated, and the modification of the film after the film is formed.

Here, during one rotation of the turntable 2, a silicon oxide film is formed on the wafer W as follows. That is, when the wafer W first passes through the first processing region P1 below the first processing gas nozzle 31, the Si-containing gas is adsorbed on the surface of the wafer W. The Si-containing gas may be, for example, an organic amino silane gas, and specifically may be, for example, diisopropyl amino silane. Next, when the wafer W passes through the second processing area P2 under the second processing gas nozzle 32, the Si-containing gas on the wafer W is oxidized by the O ₃ gas from the second processing gas nozzle 32 to form oxidation A molecular layer (or several molecular layers) of silicon. Secondly, when the wafer W passes under the plasma generator 80, the silicon oxide layer on the wafer W is exposed to the active oxygen source and the active hydrogen source. Active oxygen sources such as oxygen radicals exist in Si-containing gas, for example, and play a function of oxidizing residual organic matter in the silicon oxide layer to release it from the silicon oxide layer. Thereby, the silicon oxide layer can be highly purified.

Here, although a communication space where O ₃ gas can reach the first exhaust port 610 is formed under the turntable 2, the exhaust pressure of the first exhaust port 610 is compared with that of the second exhaust port 620 The gas pressure is set to a high predetermined pressure, so the O ₃ gas does not reach the first exhaust port 610, but is exhausted from the second exhaust port 620 together with Ar gas. Thereby, it is possible to prevent unnecessary silicon oxide film from being formed in the first exhaust port 610.

In addition, if the exhaust pressure of the first exhaust port 610 is too high, it may happen that the Si-containing gas reaches the second exhaust port 620. Therefore, the pressure difference between the first exhaust port 610 and the second exhaust port 620 is Set in an appropriate range.

The above simulation results show that the better situation is: when the pressure in the vacuum vessel 1 is 1~3 Torr, the exhaust pressure of the first exhaust port 610 is set to be 0.1~ higher than the exhaust pressure of the second exhaust port 620 The pressure range of 0.3 Torr. When the pressure in the vacuum container 1 is 3~5 Torr, the exhaust pressure of the first exhaust port 610 is set to be 0.05~0.1 Torr higher than the exhaust pressure of the second exhaust port 620 When the pressure in the vacuum container 1 is 5-10 Torr, the exhaust pressure of the first exhaust port 610 is set to a pressure range that is 0.01-0.05 Torr higher than the exhaust pressure of the second exhaust port 620.

In addition, it is explained that when the exhaust pressure is around 2 Torr, the pressure difference of about 0.2 Torr is appropriate. When the exhaust pressure is around 4 Torr, the pressure difference of about 0.75 Torr is appropriate. When the exhaust pressure is around 7 Torr A pressure difference of 0.03 Torr is appropriate for the situation.

By setting such an appropriate pressure difference, even if there is a communication space of 10 mm or more below the turntable 2, separate exhaust can be performed between the first exhaust port 610 and the second exhaust port 620.

Next, after rotating the turntable 2 the number of times to form a silicon oxide film with a desired film thickness, the mixing of Si-containing gas, O ₃ gas, and optionally supplied Ar gas, O ₂ gas, and NH ₃ gas is stopped The supply of gas ends the substrate processing method. Then, the supply of Ar gas or N ₂ gas from the separation gas nozzles 41, 42, the separation gas supply pipe 51, and the flushing gas supply pipes 72, 73 is also stopped, and the rotation of the turntable 2 is stopped. After that, the wafer W is carried out from the vacuum container 1 in the reverse order when the wafer W is carried into the vacuum container 1.

In this way, according to the substrate processing method and the substrate processing apparatus related to the first embodiment of the present invention, it is possible to prevent the oxidizing gas which is a reactive gas from being mixed into the first exhaust port 610 as the exhaust port for the raw material gas.

[Second Embodiment]

Next, the substrate processing method and the substrate processing apparatus related to the second embodiment of the present invention will be described.

Fig. 19 is a diagram showing an example of a substrate processing apparatus according to the second embodiment of the present invention. The substrate processing apparatus according to the second embodiment is different from the substrate processing apparatus according to the first embodiment in that it has a third processing area P3 and a fourth processing area P4 in addition to the first processing area P1 and the second processing area P2 . In addition, with the addition of the third and fourth processing regions P3 and P4 in the substrate processing apparatus related to the second embodiment, a third exhaust port 611 and a third exhaust port 611 are added in addition to the first exhaust port 610 and the second exhaust port 620. The fourth exhaust port 621 is different from the substrate processing apparatus related to the first embodiment in this point.

The third processing region P3 is a region in which a raw material gas such as a silicon-containing gas is supplied to the wafer W similarly to the first processing region P1. In addition, in the fourth processing area P4 and the second processing area P2, a reaction gas capable of reacting with the source gas to produce a reaction product is supplied to the reaction gas supply area of the wafer W. In addition, the third processing area P3 and the fourth processing area P4 are arranged to be separated from each other from the upstream side along the rotation direction of the turntable 2, and have the same relationship as the first processing area P1 and the second processing area P2. In addition, between the first processing area P1 and the second processing area P2, between the second processing area P2 and the third processing area P3, between the third processing area P3 and the fourth processing area P4, and the fourth processing area A separation area D is arranged between P4 and the first processing area P1, respectively.

In addition, as shown in FIG. 19, a third processing gas nozzle 310 for supplying a raw material gas to the wafer W is provided in the third processing area P3, and a third processing gas nozzle 310 for supplying a reactive gas to the wafer W is provided in the fourth processing area P4. 4Processing gas nozzle 320. In addition, the separation gas nozzles 410 and 420 similar to the separation gas nozzles 41 and 42 are respectively provided in the newly installed separation area D.

With the related structure, the raw material gas adsorbed on the wafer W in the first processing area P1 reacts with the reaction gas in the second processing area P2 to generate reaction products, and then the raw gas is adsorbed in the third processing area P3 On the wafer W (or on the film of the reaction product), the reaction product is generated by reacting with the reaction gas in the fourth processing region P4. Then, the procedure from the first processing area P1 is repeated again. In this way, the substrate processing apparatus according to the second embodiment will be an ALD process that is performed twice on the wafer W while the turntable 2 is rotated once, and the substrate processing speed can be increased. For example, if it is a film forming process, the deposition rate can be increased.

In addition, in order to form such four processing areas P1 to P4 along the circumferential direction of the turntable 2, the four processing areas P1 to P4 must be arranged with appropriate sizes (angles). For example, in the substrate processing apparatus according to the first embodiment, the conveying section including the conveying port 15 is set to 72°, the separation area D is set to 60°×2, and the first processing area (material gas supply area) P1 It is set to 60°, and the second processing area P2 is set to 67.5°. In the substrate processing apparatus related to the second embodiment, since each area must be narrowed, for example, although the conveying section including the conveying port 15 is secured at 72° as in the first embodiment, the separation area D is set to 20°×4 , The first and third processing regions (raw material gas supply regions) P1 and P3 are set to 52°×2, and the second and fourth processing regions (reactive gas supply regions) P2 and P4 are set to 52°×2, and Each area must be set to be slightly narrow in this way.

In addition, since the first and third processing regions P1 and P3 are regions for supplying source gas to the wafer W, the first processing region P1 can be referred to as the first source gas supply region P1, and the third processing region P3 This is called the second source gas supply area P3. Similarly, since the second and fourth processing regions P2 and P4 are regions for supplying reactive gas to the wafer W, the second processing region P2 can be referred to as the first reactive gas supply region P2, and the fourth processing region P4 is called a second reaction gas supply area P4. Furthermore, when plasma processing is performed in the second and fourth processing regions P2 and P4 while supplying reactive gas, the second and fourth processing regions P2 and P4 can be referred to as the first and second plasma processing regions P2 , P4.

The exhaust ports 610, 611, 620, and 621 are provided corresponding to the first and second source gas supply regions P1, P3, and the first and second reactant gas supply regions P2, P4, respectively, and are supplied to the exhaust port 610 The raw material gas in the first processing area P1 is exhausted, the reaction gas supplied to the second processing area P2 is exhausted at the exhaust port 620, and the exhaust port 611 is supplied to the third processing area The raw material gas in the area P3 is exhausted, and the reaction gas supplied to the fourth processing area P4 is exhausted at the exhaust port 621 is the same as the substrate processing apparatus according to the first embodiment.

However, even in the substrate processing apparatus of the second embodiment, the turntable 2 is still configured to be movable up and down. When the wafer W is loaded into the vacuum vessel 1, the turntable 2 is lowered, and the wafer W The lifting action is carried out at the stage of recovery and start of substrate processing. Therefore, when the substrate is processed, a gap is generated under the turntable 2, and the first to fourth exhaust ports 610, 611, 620, and 621 are connected to each other, and it is caused, for example, to be exhausted at the second exhaust port 620. The reactive gas of the gas is mixed in the first exhaust port 610 where the raw material gas is to be exhausted.

Even in the substrate processing method and substrate processing apparatus according to the second embodiment, by adjusting the pressure of the first to fourth exhaust ports 610, 611, 620, and 621, substrate processing without such mixing is performed. Hereinafter, a description of the substrate processing method and substrate processing apparatus related to the second embodiment will be made using the results of simulation experiments.

Fig. 20 is a diagram showing the results of the first simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the first simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 were all set to 2 Torr. In addition, in terms of other process conditions, the temperature of the wafer W is set to 400° C., and the rotation speed of the turntable 2 is set to 20 rpm. The raw material gas uses DCS (dichlorosilane; Si ₂ Cl ₂ ), and the reaction gas uses NH ₃ , which becomes the process of forming SiN. In addition, the second and fourth processing regions P2 and P4 become procedures for plasma processing. From the separation gas supply pipe 51 above the rotating shaft 22, Ar gas is supplied at 3 slm, and from the separation gas nozzles 41, 42 (4 because they are installed in all separation regions D), 5 slm×4 Ar gas is supplied. In addition, the flow rate of DCS as the raw material gas is set at 0.5 slm×2, and the flow rate of NH ₃ as the reaction gas is set at 5 slm×2.

FIG. 20(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. The density level is the same as in the first embodiment, the highest density level is designated as level A, the medium density level is designated as level B, and the lowest negligible level is designated as level C. In addition, the arrangement of the processing areas P1 to P4 in the vacuum vessel 1 is the same as the arrangement shown in FIG. 19. This point is the same even in the subsequent simulation results, and this description will not be repeated later.

As shown in Figure 20(a), the range of grades A and B of DCS as the raw material gas is controlled in the first and third processing areas P1 and P3 above the turntable 2, indicating that the raw material gas is properly performed The separation.

FIG. 20(b) is a graph of the simulation result of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in Fig. 20(b), the ranges of levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas separation is appropriately performed above the turntable 2.

Fig. 20(c) is a graph of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Fig. 20(c), the range of DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw material gas is properly performed even under the turntable 2.

FIG. 20(d) is a graph of the simulation result of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in FIG. 20(d), the range of the class B reaches the vicinity of the first exhaust port 610 of the first processing region P1. This shows that the influence of the reaction gas and the exhaust port 610 in the material gas supply area P1 are not sufficiently separated from the reaction gas, and the reaction gas is mixed.

Fig. 20(e) is a graph showing the simulation results of the concentration distribution of NH ₃ plasma under the turntable 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in FIG. 20(e), the range of the level A reaches the first exhaust port 610 of the first processing region P1, which shows that the reaction gas is obviously mixed into the first exhaust port 610.

In this way, it shows that when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all set to 2 Torr, the reaction gas will be mixed into the first exhaust port 610 under the turntable 2 and Unable to adopt related substrate processing methods.

Fig. 21 is a diagram showing the results of a second simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the second simulation experiment, the pressure of the first exhaust port 610 was set to 2.027 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 2 Torr. The other conditions are the same as the first simulation experiment.

FIG. 21(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 21(a), the range of the concentration levels A and B of the DCS as the raw material gas is controlled in the first and third processing areas P1 and P3 above the turntable 2, indicating that the raw material is properly processed Separation of gas.

FIG. 21(b) is a simulation result diagram of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in Fig. 21(b), the range of concentration levels A and B are controlled within the second and fourth processing regions P2 and P4, indicating that the reaction gas is appropriately separated from the top of the rotating table 2.

Fig. 21(c) is a graph of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Fig. 21(c), the range of DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw material gas is properly performed even under the turntable 2.

FIG. 21(d) is a graph of the simulation result of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in Figure 21(d), the concentration level B is controlled within the range of the second and fourth processing areas P2 and P4, and the reaction gas in the second processing area P2 does not reach the first row of the first processing area P1气口610。 Air port 610. This shows that the separation of the reaction gas is appropriately performed even under the rotating table 2.

Fig. 21(e) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in Figure 21(e), even if the plasma concentration is 10% of the maximum value, the range of the concentration levels A and B in the second treatment area P2 still does not reach the first exhaust port 610 of the first treatment area P1 . In this way, it shows that by using the conditions of the second simulation experiment, that is, setting the pressure of the first exhaust port 610 slightly higher than the other second to fourth exhaust ports 611, 620, and 621, the reaction gas can be reliably prevented Mix into the first exhaust port 610.

Fig. 22 is a diagram showing the results of a third simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the third simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 were all set to 4 Torr. In addition, the pressure in the vacuum container 1 is set to 4 Torr. Conditions other than the pressure of the exhaust port and the pressure in the vacuum vessel 1 are the same as the first and second simulation experiments.

FIG. 22(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 22(a), the range of concentration levels A and B of the DCS as the raw material gas is controlled in the first and third processing areas P1 and P3 above the turntable 2, indicating that the raw material is properly processed Separation of gas.

FIG. 22(b) is a graph showing the simulation results of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in FIG. 22(b), the range of concentration levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas is appropriately separated from the top of the rotating table 2.

Fig. 22(c) is a graph of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Figure 22(c), the range of DCS concentration levels A and B is controlled within the first and third processing areas P1 and P3, showing that the separation of the raw gas is properly performed even under the turntable 2 .

Fig. 22(d) is a graph showing the simulation result of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in FIG. 22(d), the range of the level B reaches the vicinity of the first exhaust port 610 of the first processing region P1. This shows the influence of the reaction gas and the vicinity of the exhaust port 610 in the material gas supply area P1. It can be seen that the separation of the reaction gas is not sufficiently performed, and there is a risk of mixing of the reaction gas.

Fig. 22(e) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in FIG. 22(e), the range of the level A reaches the first exhaust port 610 of the first processing region P1, which indicates that the reaction gas is mixed into the first exhaust port 610.

In this way, it can be seen that when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all set to 4 Torr, when the plasma concentration is the maximum, the reaction gas will be mixed into the first under the turntable 2 1 exhaust port 610, and related substrate processing methods cannot be used.

Fig. 23 is a diagram showing the results of a fourth simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the fourth simulation experiment, the pressure of the first exhaust port 610 was set to 4.01 Torr, and the pressure of the second to fourth exhaust ports 611, 620, and 621 were all set to 4 Torr. Conditions other than the exhaust port pressure are the same conditions as in the third simulation experiment.

FIG. 23(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 23(a), the range of the concentration levels A and B of the DCS as the raw material gas is controlled above the turntable 2 in the first and third processing areas P1 and P3, indicating that the raw material gas is properly performed The separation.

FIG. 23(b) is a simulation result diagram of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in Fig. 23(b), the range of concentration levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas is appropriately separated from the top of the rotating table 2.

FIG. 23(c) is a diagram of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Figure 23(c), the DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw gas is appropriately performed even under the turntable 2.

FIG. 23(d) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in Figure 23(d), the range of concentration levels A and B is controlled within the range of the second and fourth processing areas P2 and P4, and the reaction gas in the second processing area P2 does not reach the first processing area P1. 1Exhaust port 610. This shows that the separation of the reaction gas is appropriately performed even under the rotating table 2.

Figure 23(e) is a graph showing the simulation results of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in Fig. 23(e), even if the plasma concentration becomes 10% of the maximum value, the range of concentration levels A and B in the second treatment area P2 does not reach the first exhaust port 610 of the first treatment area P1 . In this way, by adopting the conditions of the fourth simulation experiment, that is, setting the pressure of the first exhaust port 610 to be slightly higher than the other second to fourth exhaust ports 611, 620, and 621, the reaction gas can be reliably prevented from being mixed into the first exhaust port 610. 1Exhaust port 610.

Fig. 24 is a graph showing the result of the fifth simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the fifth simulation experiment, the pressure of the first exhaust port 610 was set to 4.015 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 4 Torr. Conditions other than the pressure of the first exhaust port 610 are the same conditions as in the fourth simulation experiment.

FIG. 24(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 24(a), the range of the concentration levels A and B of the DCS as the raw material gas is controlled above the turntable 2 in the first and third processing areas P1 and P3, indicating that the raw material gas is properly performed The separation.

FIG. 24(b) is a graph of the simulation result of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in Fig. 24(b), the range of concentration levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas is appropriately separated from the top of the rotating table 2.

Fig. 24(c) is a graph of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Fig. 24(c), the range of DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw gas is appropriately performed even under the turntable 2.

FIG. 24(d) is a graph of the simulation result of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in Figure 24(d), the range of concentration levels A and B is controlled within the range of the second and fourth processing areas P2 and P4, and the reaction gas in the second processing area P2 does not reach the first processing area P1. 1Exhaust port 610. This shows that the separation of the reaction gas is appropriately performed even under the rotating table 2.

Fig. 24(e) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in Fig. 24(e), even if the plasma concentration is 10% of the maximum value, the range of concentration levels A and B in the second treatment area P2 does not reach the first exhaust port 610 of the first treatment area P1 . In addition, the degree of expansion of the range of the concentration levels A and B is smaller than the result of the fourth simulation experiment, and is farther from the first exhaust port 610. Therefore, it is shown that in the fifth simulation experiment, that is, when the pressure of the first exhaust port 610 is set to be 4.015 Torr slightly higher than 4.01 Torr by 0.005 Torr, mixing of reaction gas into the first exhaust port 610 can be more reliably prevented. In this way, by subtly changing the pressure of the first exhaust port 610, an optimal condition for preventing the reaction gas from being mixed into the first exhaust port 610 can be obtained.

Fig. 25 is a graph showing the results of a sixth simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the sixth simulation experiment, the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all set to 6 Torr. In addition, the pressure in the vacuum container 1 is set to 6 Torr. Conditions other than the pressure of the exhaust port and the pressure in the vacuum vessel 1 are the same as the first to fifth simulation experiments.

FIG. 25(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 25(a), the range of the concentration levels A and B of the DCS as the raw material gas is controlled in the first and third processing areas P1 and P3 above the turntable 2, indicating that the raw material is properly processed Separation of gas.

FIG. 25(b) is a graph showing the simulation result of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in FIG. 25(b), the range of concentration levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas is appropriately separated from the top of the rotating table 2.

FIG. 25(c) is a diagram of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Fig. 25(c), the range of DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw material gas is properly performed even under the turntable 2.

FIG. 25(d) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in FIG. 25(d), although the range of class B extends to the first exhaust port 610 of the first processing region P1, it does not reach the vicinity of the first exhaust port 610. It is shown that even below the turntable 2, a level that can satisfy the separation of the reaction gas is performed.

Figure 25(e) is a graph showing the simulation result of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in FIG. 25(e), the range of the level B reaches the first exhaust port 610 of the first processing region P1, indicating that the reaction gas is mixed into the first exhaust port 610.

In this way, it can be seen that when the pressures of the first to fourth exhaust ports 610, 611, 620, and 621 are all set to 6 Torr, if the plasma concentration becomes the maximum, the reaction gas will be mixed under the turntable 2 The first exhaust port 610 cannot use related substrate processing methods.

Fig. 26 is a graph showing the results of a seventh simulation experiment of the substrate processing method related to the second embodiment of the present invention. In the seventh simulation experiment, the pressure of the first exhaust port 610 was set to 6.01 Torr, and the pressures of the second to fourth exhaust ports 611, 620, and 621 were all set to 6 Torr. Conditions other than the pressure of the first exhaust port 610 are the same conditions as in the sixth simulation experiment.

FIG. 26(a) is a diagram of the simulation result of the DCS concentration distribution above the rotating table 2. As shown in Figure 26(a), the range of the concentration levels A and B of DCS as the raw material gas is controlled in the first and third processing areas P1 and P3 above the turntable 2, indicating that the raw material is properly processed Separation of gas.

FIG. 26(b) is a graph of the simulation result of the concentration distribution of NH ₃ plasma above the rotating table 2. As shown in Fig. 26(b), the range of concentration levels A and B are controlled within the second and fourth processing areas P2 and P4, indicating that the reaction gas is appropriately separated from the upper side of the rotating table 2.

Fig. 26(c) is a graph of the simulation result of the DCS concentration distribution under the rotating table 2. As shown in Fig. 26(c), the range of DCS concentration levels A and B are controlled within the first and third processing areas P1 and P3, showing that the separation of the raw material gas is appropriately performed even under the turntable 2.

FIG. 26(d) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2. As shown in Figure 26(d), the range of concentration levels A and B is controlled within the range of the second and fourth processing areas P2 and P4, and the reaction gas in the second processing area P2 does not reach the first processing area P1 The first exhaust port 610. This shows that the separation of the reaction gas is appropriately performed even under the rotating table 2.

Fig. 26(e) is a simulation result diagram of the concentration distribution of NH ₃ plasma under the rotating table 2 when the concentration of NH ₃ plasma is set to 10% of the maximum value. As shown in Figure 26(e), even if the plasma concentration becomes 10% of the maximum value, the range of the concentration levels A and B in the second treatment area P2 does not reach the first exhaust port 610 of the first treatment area P1 . In addition, the degree of expansion of the range of concentration levels A and B is as small as the result of the fifth simulation experiment. In this way, by adopting the conditions of the seventh simulation experiment, that is, setting the pressure of the first exhaust port 610 slightly higher than the other second to fourth exhaust ports 611, 620, and 621, the reaction gas can be prevented from being mixed into the 1Exhaust port 610.

In addition, the pressure in the vacuum vessel 1 and the pressure condition of the first exhaust port 610 adjacent to the second processing area P2 are preferably as follows.

When the pressure in the vacuum vessel 1 is 1~3 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing area P1 is higher than that of the other second to fourth exhaust ports 611, 620, 621 It is better to have a pressure higher than 0.015~0.06 Torr, or a ballast with the same pressure.

In addition, when the pressure in the vacuum vessel 1 is 3 to 5 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing area P1 is higher than that of the other second to fourth exhaust ports 611, 620, 621 The exhaust pressure is higher than the pressure of 0.01~0.03 Torr, or it is better to circulate the counterweight with the same pressure.

Furthermore, when the pressure in the vacuum vessel 1 is 5-10 Torr, the exhaust pressure of the first exhaust port 610 corresponding to the first processing region P1 is higher than that of the other second to fourth exhaust ports 611, 620, 621 The exhaust pressure is higher than the pressure of 0.005~0.015 Torr, or the circulation becomes a counterweight with the same pressure.

In addition, the relevant conditions are also consistent with the results of the first to seventh simulation experiments.

As explained above, even if the number of processing areas P1 to P4 is increased to four, by setting the exhaust pressure of the first exhaust port 610 to be slightly higher than the other second to fourth exhaust ports 611, 620 The exhaust pressure of 621 can prevent the reaction gas from being mixed into the first exhaust port 610. In addition, the third and fourth exhaust ports 611, 621, the third processing area P3, and the fourth processing area P4 are relatively narrow, away from the exhaust ports of the other processing areas P1, P2, and the exhaust ports in the processing areas P3, P4 611 and 621 become the closest exhaust ports 611 and 612 to the processing areas P3 and P4. In this case, since there will be no special problems, there is no need to change the exhaust pressure of the third and fourth exhaust ports 611, 621 for complicated settings, as long as it is better than the second processing gas nozzle 32. The first exhaust port 610, which is closer to the second exhaust port 620, may perform pressure difference control.

Although the second embodiment is described as an example of increasing the processing area to 4, even if the processing area is further increased to 6, 8, etc., the exhaust port in the processing area only needs to be processed in the adjacent processing area. The area where the exhaust port becomes the approaching position applies the above-mentioned pressure difference control, which can sufficiently prevent the reaction gas from mixing into the exhaust port of other processing areas.

In the present embodiment, although silicon-containing gas is used as a raw material gas, and an oxidizing gas is used as a reactive gas, various combinations can be adopted for the combination of raw gas and reactive gas. For example, a silicon-containing gas may be used for the source gas, and a nitriding gas such as ammonia may be used for the reaction gas to form a silicon nitride film. In addition, a titanium-containing gas may be used as a raw material gas, and a nitriding gas may be used as a reaction gas to form a titanium nitride film. In this way, the raw material gas can be selected from various gases such as organometallic gas, and the reaction gas can also be used to react with the raw material gas such as oxidizing gas and nitriding gas to produce reaction products.

In addition, in the present embodiment, the substrate processing is described as an example of film formation processing, but as long as it has a plurality of exhaust ports, the processing gas corresponding to each processing area is independently exhausted. It can also be applied to substrate processing equipment other than film forming equipment.

According to the present invention, even if there is a communication space below the turntable, independent exhaust can be performed with a plurality of exhaust ports.

It should be noted that the embodiments disclosed in this specification are illustrative in all points and not intended to limit the present invention. Actually, the above-mentioned embodiment can be presented in various forms. In addition, the above-mentioned embodiments can be omitted, replaced, and changed in various forms without departing from the scope and spirit of the attached patent application. The scope of the present invention is intended to include the scope of the appended patent application and its equivalent meaning and all changes within the scope.

This disclosure is based on the priority benefits of Japanese Patent Application No. 2015-130757 filed on June 30, 2015 and Japanese Patent Application No. 2015-229391 filed on November 25, 2015. The contents of this Japanese application are referred to here. The form of the literature is included in this case.

4‧‧‧Convex

5‧‧‧Protrusion

10‧‧‧Transfer arm

12‧‧‧Container body

15‧‧‧Transportation port

21‧‧‧Core Department

24‧‧‧Concave

31‧‧‧Processing gas nozzle

31a‧‧‧Gas inlet

32‧‧‧Processing gas nozzle

32a‧‧‧Gas inlet

41‧‧‧Separation gas nozzle

41a‧‧‧Gas inlet

42‧‧‧Separation gas nozzle

42a‧‧‧Gas inlet

80‧‧‧Plasma Generator

92‧‧‧Plasma gas nozzle

92a‧‧‧Gas inlet

100‧‧‧Control Department

610‧‧‧First exhaust port

620‧‧‧The second exhaust port

630‧‧‧Exhaust pipe

631‧‧‧Exhaust pipe

640‧‧‧Vacuum pump

641‧‧‧Vacuum pump

650‧‧‧Automatic pressure control machine

651‧‧‧Automatic pressure controller

D‧‧‧Separated area

E1‧‧‧Exhaust area

E2‧‧‧Exhaust area

P1‧‧‧The first processing area

P2‧‧‧Second processing area

W‧‧‧wafer

Claims (21)

A substrate processing method uses a processing chamber to perform substrate processing. The processing chamber has: a rotating table; a first processing gas supply area located on the rotating table; and a first exhaust port formed on the first The processing gas supply area should be below, and set to exhaust the first processing gas supplied to the first processing gas supply area; the second processing gas supply area is located on the turntable; the second exhaust The port is formed below the second processing gas supply area and is provided for exhausting the second processing gas supplied to the second processing gas supply area; and a communication space is formed in the rotating table Below, the first exhaust port and the second exhaust port are connected, and a space common to the first processing gas and the second processing gas; in the substrate processing, the first row The exhaust pressure of the port is higher than the exhaust pressure of the second exhaust port by a predetermined pressure, so as to exhaust the first process gas from the first exhaust port and the second exhaust port from the second exhaust port. 2 When the processing gas is exhausted, the first processing gas flowing into the communication space and the second processing gas of the second processing gas are prevented from being mixed into the first exhaust port. For example, the substrate processing method of the first item in the scope of the patent application, wherein the predetermined pressure is within the predetermined pressure range. For example, the substrate processing method of item 2 of the scope of patent application, wherein the predetermined pressure range is a pressure range in which the first processing gas is not mixed into the second exhaust port. For example, in the substrate processing method of item 2 of the scope of patent application, the communication space is the space below the rotating table on which the substrate can be placed; the first and second exhaust ports are arranged below the communication space; the first 1 The processing gas supply area and the second processing gas supply area are separated above the turntable by a separation area protruding downward from the ceiling surface of the processing chamber to prevent the second processing gas from being mixed into the first 1 processing gas supply area and the first processing gas is mixed into the second processing gas supply area; while performing the first and second processing gas from the first exhaust port and the second exhaust port The substrate processing is performed while exhausting, supplying the first processing gas to the first processing gas supply area, and supplying the second processing gas to the second processing gas supply area while rotating the turntable. Such as the substrate processing method of claim 4, wherein the flushing gas is supplied from the separation area, the first processing gas and the flushing gas are exhausted from the first exhaust port, and the second exhaust port The second processing gas and the flushing gas are exhausted. For example, the substrate processing method of item 4 of the scope of patent application, wherein the first exhaust port is provided at the downstream end of the first processing gas supply area in the rotation direction of the turntable, and the second exhaust port is provided at the The second processing gas supply area is at the downstream end of the rotating table in the rotation direction, the second processing gas supply area is longer in the rotation direction than the first processing gas supply area, and the second processing gas is supplied to the The second processing gas supply nozzle of the second processing gas supply area is close to the first exhaust port with respect to the second exhaust port. Such as the substrate processing method of the 6th patent application, wherein the substrate processing is ALD film formation processing. For example, the substrate processing method of item 7 of the scope of patent application, wherein the first processing gas is a raw material gas; the second processing gas is a reaction gas that can react with the raw material gas to generate a reaction product. Such as the substrate processing method of item 8 of the scope of patent application, wherein the predetermined pressure range is different according to the pressure in the processing chamber. For example, in the substrate processing method of item 9 of the scope of patent application, the predetermined pressure range is set to a smaller pressure range when the pressure in the processing chamber is higher. For example, the substrate processing method of item 10 of the scope of patent application, when the pressure in the processing chamber is 1 to 3 Torr, the predetermined pressure range is set at 0.1 to 0.3 Torr; when the pressure in the processing chamber is 3 to 5 Torr , The predetermined pressure range is set at 0.05~0.1 Torr; when the pressure in the processing chamber is 5-10 Torr, the predetermined pressure range is set at 0.01~0.05 Torr. For example, the substrate processing method of item 4 of the scope of patent application, wherein the rotating table can be raised and lowered, the substrate is loaded when the rotating table is in a descending state, and the substrate processing is performed in the state after the rotating table is raised. For example, the substrate processing method in the first item of the scope of patent application, wherein the temperature in the processing chamber is set to be above 400°C. A substrate processing device has: a processing chamber; a rotating table, which is installed in the processing chamber, can place a substrate on the surface, and can be raised and lowered; a first and a second processing gas supply area are along the circumference of the rotating table The first and second exhaust ports respectively correspond to the first and second processing gas supply areas and are arranged below the rotating table; the first and second pressure adjustment The valve is used to adjust the exhaust pressure of the first and second exhaust ports; the separation area is protruding downward from the ceiling surface of the processing chamber, and the first processing gas supply area is above the rotating table It is provided between the first processing gas supply area and the second processing gas supply area so as to be separated from the second processing gas supply area; and the control mechanism is controlled in the following manner: when the substrate is placed on the When the rotary table is on, the rotary table is lowered, and when the rotary table is rotated to perform substrate processing, the rotary table is raised, and in order to prevent the second processing gas from passing through the second process gas generated by the rising of the rotary table and communicating with the second 1 The communication space between the exhaust port and the second exhaust port is exhausted from the first exhaust port, so that the exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second exhaust port The first and second pressure regulating valves are controlled in a way to output a predetermined pressure. For example, the substrate processing device of the 14th patent application, wherein the control mechanism also controls the pressure of the processing chamber; the predetermined pressure is changed according to the pressure of the processing chamber. A substrate processing method that uses a processing chamber to process substrates; the processing chamber has: a rotating table on which a substrate can be placed; above the rotating table, materials are supplied to the substrate separated from each other in the direction of rotation The first raw material gas supply area of the gas, the supply can react with the raw material gas to generate reaction gas The first reaction gas supply area for the reaction gas of the finished product, the second raw material gas supply area for supplying the raw gas, and the second reaction gas supply area for supplying the reaction gas; formed below the first raw gas supply area The first exhaust port provided to exhaust the raw material gas supplied to the first raw material gas supply area is formed below the first reaction gas supply area and is provided for supplying the raw material gas to the The second exhaust port for exhausting the reaction gas in the first reaction gas supply area is formed below the second raw material gas supply area and is provided for supplying the raw material supplied to the second raw gas supply area A third exhaust port through which gas is exhausted, and a fourth row formed below the second reactive gas supply region and provided for exhausting the reactive gas supplied to the second reactive gas supply region Gas port; and a communication space is formed under the turntable to communicate the first to fourth exhaust ports with each other, and is opposite to the first and second source gases and the first and second reaction gases It is a common space; in the substrate processing, the exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second to fourth exhaust ports by a predetermined pressure, so as to be from the first exhaust port The first source gas is exhausted, the first reaction gas is exhausted from the second exhaust port, the second source gas is exhausted from the third exhaust port, and the fourth exhaust port is exhausted. When the second reaction gas is exhausted, the second source gas and the first and second reaction gases in the first and second source gases and the first and second reaction gases flowing into the communication space are prevented from being mixed into the The first exhaust port. For example, the substrate processing method of claim 16, wherein the communication space is the space below the turntable; the first to fourth exhaust ports are arranged below the communication space; the first raw material gas supply The area, the first reaction gas supply area, the second raw material gas supply area, and the second reaction gas supply area are mutually above the turntable by a separation area protruding downward from the ceiling surface of the processing chamber. Separation to avoid mixing of the reaction gas into the first and second raw material gas supply regions and the manner in which the raw material gas is mixed into the first and second reaction gas supply regions; while performing exhaust from the first to fourth The exhaust of the raw material gas and the reaction gas, the supply of the raw material gas to the first and second raw material gas supply regions, and the first And the second reaction gas supply area supplies the reaction gas while rotating the turntable to perform the substrate processing. For example, the substrate processing method of item 16 in the scope of patent application, wherein the predetermined pressure is within the predetermined pressure range. For example, the substrate processing method of item 18 of the scope of patent application, where the pressure in the processing chamber is 1~3 Torr, the predetermined pressure range is set at 0.015~0.06 Torr; when the pressure in the processing chamber is 3~5 Torr , The predetermined pressure range is set at 0.01~0.03 Torr; when the pressure in the processing chamber is 5~10 Torr, the predetermined pressure range is set at 0.005~0.015 Torr. A substrate processing device has: a processing chamber; a rotary table, which is arranged in the processing chamber, can place a substrate on the surface, and can be raised and lowered; a pair of pairs arranged above the rotary table along the direction of rotation of the rotary table are separated from each other The turntable supplies a first raw material gas supply area for raw gas, a first reaction gas supply area for a reaction gas that can react with the raw material gas to produce a reaction product, a second raw gas supply area for supplying the raw gas, And a second reaction gas supply area for supplying the reaction gas; corresponding to the first source gas supply area, the first reaction gas supply area, the second source gas supply area, and the second reaction gas supply area, respectively The 1st to 4th exhaust ports below the rotary table; the 1st to 4th pressure regulating valves to adjust the exhaust pressure of the first to fourth exhaust ports; the separation area is from the treatment The ceiling surface of the chamber protrudes downward, and the first source gas supply area, the first reaction gas supply area, the second source gas supply area, and the second reaction gas supply area are separated from each other above the turntable The method is installed between the first raw material gas supply area, the first reactive gas supply area, the second raw gas supply area, and the second reactive gas supply area; the control mechanism is controlled in the following manner: When the substrate is placed on the rotating table, the rotating table is lowered, and when the rotating table is rotated to perform substrate processing, the rotating table is raised, and in order to prevent the reaction gas from passing due to the rising of the rotating table From 1 to The communication space where the fourth exhaust ports communicate with each other is exhausted from the first exhaust port, and the exhaust pressure of the first exhaust port is higher than the exhaust pressure of the second to fourth exhaust ports The first to fourth pressure regulating valves are controlled by a predetermined pressure method. For example, the substrate processing method of item 17 of the scope of patent application is to supply flushing gas from the separation area, and exhaust the raw material gas together with the flushing gas from the first and third exhaust ports, and from the second and fourth The exhaust port allows the reaction gas and the flushing gas to be exhausted.

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