TWI706206B - Pixel structure - Google Patents

Abstract

A pixel structure includes an active device, a first planarization layer, an auxiliary electrode, a second planarization layer, and a light emitting device. The active device is on a substrate. The active device includes a drain and a source. The first planarization layer is on the active device. The auxiliary electrode is on the first planarization layer. The second planarization layer is on the auxiliary electrode and the first planarization layer. The light emitting device includes a first electrode layer, an active layer, and a second electrode layer sequentially disposed on the substrate. The first electrode layer is on the second planarization layer and is electrically connected to the drain or the source through the first through hole. The second electrode layer is electrically connected to the auxiliary electrode the through the second through hole.

Description

Pixel structure

This disclosure is about a pixel structure.

The organic electroluminescence device is a self-luminous (Emissive) display. Because organic electroluminescence devices have wide viewing angles, high response speeds (about a hundred times that of liquid crystals), light weight, miniaturization and thinning with hardware equipment, high luminous efficiency, high color rendering index and surface Light source and other characteristics. Therefore, organic electroluminescent devices have great development potential and are expected to become the next generation of novel flat panel displays.

Top emission display is currently one of the display technologies commonly used in organic electroluminescence devices to increase the aperture ratio of pixels. However, the traditional top-emitting display technology has high difficulty in manufacturing thin electrode thickness, high electrode resistance, and serious power supply voltage drop (IR drop) when organic electroluminescent devices are developed toward large sizes, which will cause active The brightness of the array of light-emitting elements for matrix organic light-emitting diode (AMOLED) panels is uneven. In order to effectively reduce the power supply voltage drop, the addition of auxiliary electrodes has become another option to solve the problem. However, the addition of auxiliary electrodes will often greatly increase the layout area of the device, resulting in a loss of aperture ratio.

The embodiment of the present disclosure provides a pixel structure, which has a second flat layer, so that the first electrode layer is formed on a surface with good flatness, thereby improving the uniformity of light emission of the light-emitting element. A part of the first electrode layer adjacent to the auxiliary electrode is further away from the substrate than the auxiliary electrode due to the height of the second flat layer, which facilitates the disconnection of the electrical connection between the first electrode layer and the auxiliary electrode during the manufacturing process, thereby solving the problem of the first electrode The problem of short-circuit between the layer and the auxiliary electrode, thereby improving the yield and stability of the process, and thus shortening the horizontal distance between the first electrode layer and the auxiliary electrode in the first direction and the horizontal distance in the second direction, thereby increasing the opening rate. The pixel structure further has the first part of the pixel electrode located in the auxiliary hole, thereby shortening the horizontal distance between the first electrode layer and the auxiliary electrode in the first direction and the horizontal distance in the second direction, thereby increasing the aperture ratio .

In one embodiment, a pixel structure includes an active element, a first flat layer, an auxiliary electrode, a second flat layer, and a light-emitting element. The active device is located on the substrate, and the active device includes a drain and a source. The first flat layer is located on the active element. The auxiliary electrode is located on the first flat layer. The second flat layer is located on the auxiliary electrode and the first flat layer. The light-emitting element includes a first electrode layer, an active layer, and a second electrode layer sequentially disposed on a substrate. The first electrode layer is located on the second flat layer and is electrically connected to the drain or source through the first contact hole. The two electrode layers are electrically connected to the auxiliary electrode through the second contact hole.

In one embodiment, a pixel structure includes an active device, a first flat layer, an auxiliary electrode, a light emitting device, and a pixel definition layer (PDL). The active element is located on the substrate, and the active element includes a drain. The first flat layer is located on the active element. The auxiliary electrode is located on the first flat layer. The light-emitting elements include The first electrode layer, the active layer and the second electrode layer on the substrate, wherein the first electrode layer is electrically connected to the drain through the first contact hole. The pixel definition layer is located on the first electrode layer, and has a first part located in the auxiliary hole, and the auxiliary hole and the first contact hole are separated by a distance.

10, 10a, 10b‧‧‧Pixel structure

100‧‧‧Substrate

102‧‧‧Auxiliary electrode

104‧‧‧Pixel definition layer

106‧‧‧Light-emitting element

108‧‧‧First electrode layer

108P‧‧‧Part

110‧‧‧Pixel opening area

112‧‧‧Active Components

114‧‧‧First flat layer

116‧‧‧Second flat layer

118‧‧‧Gate

120‧‧‧Gate insulation layer

122‧‧‧Semiconductor layer

124‧‧‧Interlayer dielectric layer

126‧‧‧Dip pole

128‧‧‧Source

130‧‧‧Dip pole area

132‧‧‧Source Region

134‧‧‧Access area

136‧‧‧Inorganic insulating layer

138‧‧‧Active layer

140‧‧‧Second electrode layer

142‧‧‧Accommodation space

144‧‧‧Electron transport layer

146‧‧‧Hole Transmission Layer

148‧‧‧hole injection layer

150‧‧‧Electron injection layer

152‧‧‧First sub-layer

154‧‧‧Second sub-layer

1040‧‧‧Part 1

1040a‧‧‧Top

1040b‧‧‧Bottom

1042‧‧‧Part 2

AH‧‧‧Auxiliary hole

D1‧‧‧First direction

D2‧‧‧Second direction

H‧‧‧Segment difference

HS1, HS2, HS3, HS4‧‧‧Horizontal distance

L1‧‧‧Length

L2‧‧‧Extended length

L3‧‧‧Extended length

O‧‧‧Open

T1, T2‧‧‧Thickness

TH1‧‧‧First contact hole

TH2‧‧‧Second contact hole

W1, W2, W3, W4, W5, W6, W7‧‧‧Width

Read the following detailed description and match the corresponding drawings to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion.

Figure 1A is a top view of a pixel structure according to an embodiment; Figure 1B is a schematic cross-sectional view along the line Y-Y' of Figure 1A; Figure 1C is a schematic cross-sectional view along the line X-X' of Figure 1A Figure 2A is a top view of a pixel structure according to another embodiment; Figure 2B is a schematic cross-sectional view along the line Y-Y' of Figure 2A; Figure 2C is a cross-sectional view along the line X-X' of Figure 2A Fig. 3A is a top view of a pixel structure according to another embodiment; Fig. 3B is a schematic cross-sectional view along the line Y-Y' in Fig. 3A; and Fig. 3C is a schematic view along the line X- of Fig. 3A Schematic cross-section of X'.

The following will clearly illustrate the spirit of the present disclosure with drawings and detailed descriptions. Anyone with ordinary knowledge in the relevant technical field can change and modify the techniques taught in the present disclosure after understanding the embodiments of the present disclosure. Depart from the spirit and scope of this disclosure. For example, the statement that "the first feature is formed on or on the second feature" will include the first feature and the second feature having direct contact; and will also include the first feature and the second feature being indirect The contact has an additional feature formed between the first feature and the second feature. In addition, the present disclosure will reuse component numbers and/or text in multiple examples. The purpose of repetition is to simplify and clarify, and it does not determine the relationship between multiple embodiments and/or the discussed configurations.

In addition, relative terms such as "below", "below", "below", "above" or "up" or similar terms are used in this article to facilitate the description of the words shown in the diagram The relationship of one element or feature to another element or feature. In addition to describing the position of the device in the diagram, the relative position vocabulary includes the different positions of the device under use or operation. When the device is additionally set (rotated by 90 degrees or other facing orientation), the relative terms of the orientation used in this article can also be explained accordingly.

FIG. 1A is a top view of a pixel structure 10 according to an embodiment. Referring to FIG. 1A, the pixel structure 10 includes a substrate 100, an auxiliary electrode 102, a pixel definition layer (PDL) 104, and a first electrode layer 108 of a light emitting element 106 (not shown). For the convenience of explanation, other components are omitted from the figure. The first electrode layer 108 and the auxiliary electrode 102 are disposed on the substrate 100. The first electrode layer 108 and the auxiliary electrode 102 are separated from each other by a distance and are electrically insulated from each other. In other words, the vertical projection of the first electrode layer 108 on the substrate 100 It is separated from the vertical projection of the auxiliary electrode 102 on the substrate 100 by a distance. The pixel defining layer 104 is located on the first electrode layer 108 and the auxiliary electrode 102. The pixel defining layer 104 defines a plurality of pixel opening regions 110. The pixel opening regions 110 have a long axis and a short axis, and the long axis is parallel to the first direction D1 , The minor axis is parallel to the first The two directions D2, the first direction D1 and the second direction D2 are orthogonal, but the disclosure is not limited to this. The material of the substrate 100 is, for example, glass, quartz, organic polymer, metal, etc., but not limited thereto.

Figure 1B is a schematic cross-sectional view along the line Y-Y' of Figure 1A. Figure 1C is a schematic cross-sectional view taken along the line X-X' of Figure 1A. Referring to FIGS. 1A to 1C together, the pixel structure 10 further includes an active device 112, a first planar layer 114, a second planar layer 116 and a light emitting device 106 which are sequentially arranged on the substrate 100. The first flat layer 114 is located on the active device 112, and the auxiliary electrode 102 is located on the first flat layer 114. The first flat layer 114 has a flat surface, so that the film layer (such as the auxiliary electrode 102) formed thereon has a low Roughness. For example, the first flat layer 114 is a film layer with insulating properties, such as a dielectric material. The material of the first flat layer 114 can be an inorganic material, an organic material, or a combination thereof. The inorganic material is, for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the foregoing materials. The organic material is, for example, a polymer material such as polyimide resin, epoxy resin, or acrylic resin.

Specifically, the active device 112 includes a gate electrode 118, a gate insulating layer 120, a semiconductor layer 122, an interlayer dielectric layer 124, a drain electrode 126, and a source electrode 128. The gate electrode 118 is located on the substrate 100, the gate insulating layer 120 is located on the gate electrode 118, the semiconductor layer 122 is located on the gate insulating layer 120, and the interlayer dielectric layer 124 is located on the semiconductor layer 122. The semiconductor layer 122 has a drain region 130, The source region 132 and the channel region 134 are located between the drain region 130 and the source region 132. The drain 126 and the source 128 are located on the interlayer dielectric layer 124 and are connected to the drain region 130 and the source region 132 through the opening O. The material of the semiconductor layer 122 is, for example, amorphous silicon, polycrystalline silicon, microcrystalline silicon, monocrystalline silicon, organic semiconductor materials, and oxide semiconductor materials. Bulk materials (for example: indium zinc oxide, indium germanium zinc oxide, or other suitable materials, or a combination of the above), or other suitable materials, or containing dopants in the above materials, or the above的组合。 The combination. The first electrode layer 108 is located on the second flat layer 116 and is electrically connected to the source 128 through the first contact hole TH1, so that the light-emitting element 106 is controlled by the active element 112.

The gate electrode 118 can be a single layer or multiple layers, and its material is, for example, a metal, a metal oxide, an organic conductive material, or a combination of the foregoing. The gate insulating layer 120 can be a single layer or multiple layers, and its material includes silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof. The interlayer dielectric layer 124 can be a single-layer or multi-layer structure, and the material can include inorganic materials, organic materials, or other suitable materials. The inorganic materials include, but are not limited to, silicon oxide, silicon nitride, or silicon oxynitride. ; Organic materials for example include (but are not limited to): polyimide resins, epoxy resins or acrylic resins. In this embodiment, the active element 112 is, for example, a thin film transistor (TFT), such as but not limited to a top gate type thin film transistor, a bottom gate type thin film transistor or other suitable types of thin film transistors. .

In one embodiment, the pixel structure 10 further includes an inorganic insulating layer 136 located between the interlayer dielectric layer 124 and the first planar layer 114, such as silicon nitride, silicon oxide, or aluminum oxide.

The light-emitting element 106 further includes an active layer 138 and a second electrode layer 140 sequentially disposed on the substrate 100. Furthermore, the active layer 138 is driven by the voltage difference generated between the first electrode layer 108 and the second electrode layer 140. Emit light. The pixel definition layer 104 has an accommodation space 142, wherein at least a part of the active layer 138 is located in the accommodation space 142.

In this embodiment, the light-emitting element 106 is a top-emission type organic light-emitting display. In this case, the first electrode layer 108 is, for example, a reflective electrode. The second electrode layer 140 is, for example, a penetration electrode. The first electrode layer 108 may include a reflective material, such as a conductive material such as a metal, an alloy, a transparent metal oxide, or a stacked layer of a metal and a transparent metal oxide conductive material, such as gold, silver, Aluminum, molybdenum, copper, titanium, chromium, tungsten or other suitable metals, but the present disclosure is not limited thereto. The second electrode layer 140 may also include a metal, an alloy, a transparent metal oxide conductive material, or a stacked layer of a metal and a transparent metal oxide conductive material. The transparent metal oxide conductive material is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable metal oxides, or a stack of at least two of the foregoing However, this disclosure is not limited to this. The first electrode layer 108 and the second electrode layer 140 can be formed by an evaporation process and a metal mask, but the disclosure is not limited thereto. For example, the first electrode layer 108 and the second electrode layer 140 can also be formed using a sputtering process, or a chemical vapor deposition process or physical vapor deposition combined with a photolithography process or a metal mask. In this embodiment, the first electrode layer 108 is, for example, an anode, and the second electrode layer 140 is, for example, a cathode. However, it must be noted that whether the first electrode layer 108 and the second electrode layer 140 are cathode or anode is determined by The design requirements are subject to change.

The auxiliary electrode 102 may include conductive materials with relatively low resistivity, such as silver, aluminum, copper, magnesium, molybdenum, composite layers of the foregoing materials, or alloys of the foregoing materials, but it is not limited thereto. The second electrode layer 140 is electrically connected to the auxiliary electrode 102 through the second contact hole TH2. By electrically connecting the auxiliary electrode 102 with a lower resistivity to the second electrode layer 140, it can be improved when the second electrode layer 140 needs Maintain one The phenomenon of power supply voltage drop (IR drop) that may occur when thinner metal materials or transparent conductive materials with higher impedance are used for a certain light transmittance.

The second flat layer 116 is located on the auxiliary electrode 102 and the first flat layer 114. The first electrode layer 108 and the auxiliary electrode 102 are electrically insulated from each other through the second flat layer 116, and a part 108P of the first electrode layer 108 is larger than the auxiliary electrode. 102 is further away from the substrate 100. Specifically, a portion 108P of the first electrode layer 108 adjacent to the auxiliary electrode 102 is further away from the substrate 100 than the auxiliary electrode 102 due to the height of the second flat layer 116. As a result, it is beneficial to the interruption during the manufacturing process. Opening the electrical connection between the first electrode layer 108 and the auxiliary electrode 102 solves the problem of short circuit between the first electrode layer 108 and the auxiliary electrode 102, thereby improving the yield and stability of the process, and thus shortening the first electrode layer The horizontal distance HS1 between 108 and the auxiliary electrode 102 along the first direction D1 and the horizontal distance HS2 along the second direction D2, wherein the minimum horizontal distance HS1 between the first electrode layer 108 and the auxiliary electrode 102 along the first direction D1 is between Between about 2.5 microns and about 5.5 microns, the minimum horizontal distance HS2 between the first electrode layer 108 and the auxiliary electrode 102 along the second direction D2 is between about 2.5 microns and about 5.5 microns, and the first contact hole The minimum horizontal distance HS3 between TH1 and the second contact hole TH2 along the first direction D1 is between about 8.5 μm and about 11.5 μm, and the minimum horizontal distance between the auxiliary electrode 102 and the first contact hole TH1 along the first direction D1 HS4 is between about 5.5 microns and about 8.5 microns. As a result, the length L1 of the accommodating space 142 along the first direction D1 (that is, the long axis of the pixel opening area 110) can be increased by about 6 microns at most, along the second direction The width W1 of D2 (ie, the short axis of the pixel opening area 110) can be increased by about 6 microns at most, thereby increasing the opening ratio of the pixel structure 10 and providing good display quality. In one embodiment, the aperture ratio of the pixel structure 10 can be increased from about 40% to about 55% at most.

In addition, the second flat layer 116 has a flat surface. In this way, the first electrode layer 108 can be formed on a surface with good flatness through the stack of the first flat layer 114 and the second flat layer 116. , So that the first electrode layer 108 has a low roughness, thereby improving the uniformity of light emission of the light emitting element 106 and providing a good display quality. The material of the second flat layer 116 can be similar to that of the first flat layer 114, and will not be repeated here. In one embodiment, the thickness T2 of the second flat layer 116 is substantially greater than the thickness T1 of the first flat layer 114. For example, the thickness T1 of the first flat layer 114 is between about 1 micrometer and about 3 micrometers. The thickness T2 of the two flat layers 116 is greater than about 3 micrometers. In this way, the flatness of the first electrode layer 108 can be improved, thereby improving the uniformity of light emission of the light-emitting element 106 and providing good display quality.

For example, the active layer 138 may be a white light emitting material layer or a light emitting material layer of other specific colors (such as red light, green light, blue light, ultraviolet light, etc.). The method for forming the active layer 138 is, for example, an evaporation method, a coating method, a deposition method, or other suitable methods. In this embodiment, in order to further improve the luminous efficiency of the light emitting element 106, an electron transport layer 144 and a hole transport layer 146 are further provided. The electron transport layer 144 is made of an electron transport material, for example, is disposed between the active layer 138 and the second electrode layer 140. The hole transport layer 146 is made of a hole transport material, for example, is disposed between the active layer 138 and the first electrode layer 108. In addition, a hole injection layer 148 may be further included. The hole injection layer 148 is made of a hole injection material, for example, is disposed between the first electrode layer 108 and the hole transport layer 146. In another embodiment, an electron injection layer 150 may be further disposed between the second electrode layer 140 and the electron transport layer 144. However, it must be mentioned that the configuration of the hole injection layer 148, the hole transport layer 146, the electron transport layer 144 and the electron injection layer 150 is Optionally, it may not exist in the light-emitting element 106. In this embodiment, the light-emitting element 106 is an up-emitting type as an example, but the disclosure is not limited to this. In other embodiments, if the materials of the first electrode layer 108 and the second electrode layer 140 are both Using transparent conductive materials, the formed organic electroluminescent device is a double-sided light emitting device.

FIG. 2A is a top view of a pixel structure 10a according to another embodiment. Figure 2B is a schematic cross-sectional view taken along the line Y-Y' of Figure 2A. Figure 2C is a schematic cross-sectional view taken along the line X-X' of Figure 2A. It must be noted that the embodiments in Figures 2A to 2C follow the component numbers and part of the content of the embodiments in Figures 1A to 1C, and the same reference numbers are used to denote the same or similar components, and the same is omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here.

The pixel structure 10a of this embodiment is similar to the pixel structure 10 of the embodiment of FIG. 1A to FIG. 1C. The difference between the two is that the pixel structure 10a does not have the second flat layer 116, and the pixel definition layer 104 has The first part 1040 and the second part 1042, the first part 1040 is located in the auxiliary hole AH, the auxiliary electrode 102 is electrically insulated from the first electrode layer 108 through the first part 1040 of the pixel definition layer 104 located in the auxiliary hole AH, The auxiliary hole AH and the first contact hole TH1 are separated from each other by a distance, and the distance between the auxiliary electrode 102 and the substrate 100 is substantially the same as the distance between the first electrode layer 108 on the first flat layer 114 and the substrate 100. In some embodiments, the first electrode layer 108 and the auxiliary electrode 102 are manufactured through the same lithography and etching process, for example. In other words, the first electrode layer 108 and the auxiliary electrode 102 belong to the same patterned film, and the first electrode layer 108 and the auxiliary electrode 102 have substantially the same material and substantially the same thickness. Auxiliary hole AH along The width W2 of the first direction D1 is between about 3 μm and about 5.5 μm, and the width W3 of the auxiliary hole AH along the second direction D2 is between about 3 μm and about 5.5 μm. In this way, it is beneficial to disconnect the electrical connection between the first electrode layer 108 and the auxiliary electrode 102 during the etching process, and the first electrode layer 108 and the auxiliary electrode 102 will not be electrically connected due to the residue of incomplete etching. The problem of short circuit between the first electrode layer 108 and the auxiliary electrode 102 improves the yield and stability of the process. Therefore, the horizontal distance HS1 between the first electrode layer 108 and the auxiliary electrode 102 along the first direction D1 and the horizontal distance HS2 along the second direction D2 can be shortened, wherein the distance between the first electrode layer 108 and the auxiliary electrode 102 along the first direction The minimum horizontal distance HS1 between D1 is between about 3 μm and about 5.5 μm, and the minimum horizontal distance HS2 between the first electrode layer 108 and the auxiliary electrode 102 along the second direction D2 is between about 3 μm and about 5.5 μm. The minimum horizontal distance HS3 between the first contact hole TH1 and the second contact hole TH2 along the first direction D1 is between about 9 μm and about 11.5 μm. The auxiliary electrode 102 and the first contact hole TH1 are along the first The minimum horizontal distance HS4 from one direction D1 is between about 6 microns and about 8.5 microns. As a result, the length L1 of the accommodating space 142 along the first direction D1 (ie the long axis of the pixel opening area 110) can be increased at most About 5 microns, the width W1 along the second direction D2 (ie, the short axis of the pixel opening area 110) can be increased by about 5 microns at most, thereby increasing the aperture ratio of the pixel structure 10a and providing good display quality. In one embodiment, the aperture ratio of the pixel structure 10a can be increased from about 40% to about 52% at most. The second portion 1042 contacts the sidewall of the first electrode layer 108 through the first contact hole TH1, and the extension length L2 of the second portion 1042 toward the substrate 100 is greater than the extension length L3 of the first portion 1040 toward the substrate 100.

FIG. 3A is a top view of a pixel structure 10b according to another embodiment. Figure 3B is a schematic cross-sectional view taken along the line Y-Y' of Figure 3A. Figure 3C shows A schematic cross-sectional view along the line X-X' in Figure 3A. It must be noted that the embodiments in Figures 3A to 3C follow the component numbers and part of the content of the embodiments in Figures 2A to 2C, in which the same reference numbers are used to denote the same or similar components, and the omitted Description of the same technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which is not repeated here. The pixel structure 10b of this embodiment is similar to the pixel structure 10a of the embodiment of FIG. 2A to FIG. 2C. The difference between the two is: the first flat layer 114 of this embodiment includes a first sublayer 152 and a second sublayer 152 The sub-layer 154 and the second sub-layer 154 are located on the first sub-layer 152. By providing the second sub-layer 154, the flatness of the first electrode layer 108 can be improved, thereby improving the light emission uniformity of the light-emitting element 106 and providing good display quality , Wherein the first contact hole TH1 penetrates the first sublayer 152 and the second sublayer 154, and the auxiliary hole AH penetrates the first sublayer 152 and the second sublayer 154. In this way, it can be ensured that the electrical connection between the first electrode layer 108 and the auxiliary electrode 102 will not be completely disconnected due to etching residue during the etching process, and the problem of the short circuit between the first electrode layer 108 and the auxiliary electrode 102 can be solved, thereby Improve the yield and stability of the process, and therefore shorten the horizontal distance HS1 between the first electrode layer 108 and the auxiliary electrode 102 along the first direction D1 and the horizontal distance HS2 along the second direction D2, where the first electrode layer 108 and The minimum horizontal distance HS1 between the auxiliary electrodes 102 along the first direction D1 is between about 3 microns and about 5.5 microns, and the minimum horizontal distance HS2 between the first electrode layer 108 and the auxiliary electrodes 102 along the second direction D2 Between about 3 microns and about 5.5 microns, and the minimum horizontal distance HS3 between the first contact hole TH1 and the second contact hole TH2 along the first direction D1 is between about 9 microns and about 11.5 microns, the auxiliary electrode 102 and The minimum horizontal distance HS4 between the first contact holes TH1 along the first direction D1 is between about 6 microns and about 8.5 microns. As a result, the accommodating space 142 along the first direction D1 The length L1 (that is, the long axis of the pixel opening area 110) can be increased by about 5 microns at most, and the width W1 (that is, the short axis of the pixel opening area 110) along the second direction D2 can be increased by about 5 microns, thereby enhancing the picture The aperture ratio of the element structure 10b provides good display quality. In one embodiment, the aperture ratio of the pixel structure 10b can be increased from about 40% to about 52% at most.

In one embodiment, there is a step H along the first direction D1 between the sidewall of the first sublayer 152 and the sidewall of the second sublayer 154. Specifically, the first pixel definition layer 104 in the auxiliary hole AH The portion 1040 has a stepped shape. For example, the first portion 1040 has a top 1040a and a bottom 1040b, the top 1040a is located on the bottom 1040b, and the top 1040a is sandwiched between the second sublayers 154 and contacts the sidewalls of the second sublayers 154. The bottom 1040b is sandwiched between the first sublayers 152 and contacts the sidewalls of the first sublayers 152. In one embodiment, the width W4 of the top 1040a along the first direction D1 and the width W5 along the second direction D2 are between about 3 microns and about 5.5 microns, and the width W6 of the bottom 1040b along the first direction D1 is smaller than or the width W6 of the top 1040a Along the width W4 of the first direction D1, the width W7 of the bottom 1040b in the second direction D2 is smaller than or the width W5 of the top 1040a in the second direction D2, and the width W6 of the bottom 1040b in the first direction D1 and width W6 in the second direction D2 W7 is between about 3 microns and about 5.5 microns. In this way, by the design of the step H, the step H can be used to accommodate the conductor layers (such as the first electrode layer 108 and the auxiliary electrode 102) that are broken during the manufacturing process. The first electrode layer 108 and the auxiliary electrode 102 are flush and connected together. In this way, it can be ensured that the electrical connection between the first electrode layer 108 and the auxiliary electrode 102 is disconnected during the etching process and will not be damaged by incomplete etching. The residue causes the first electrode layer 108 to be electrically connected to the auxiliary electrode 102, which solves the problem of short circuit between the first electrode layer 108 and the auxiliary electrode 102. In other embodiments, the bottom The width W6 of 1040b in the first direction D1 may be substantially equal to the width W4 of the top 1040a in the first direction D1, and the width W7 of the bottom 1040b in the second direction D2 may be substantially equal to the width W5 of the top 1040a in the second direction D2.

The embodiment of the present disclosure provides a pixel structure 10, 10a, and 10b. The pixel structure 10 has a second flat layer 116. In this way, the first electrode layer 108 is formed on a surface with good flatness, thereby enhancing light emission. The uniformity of light emission of the element 106. A portion 108P of the first electrode layer 108 adjacent to the auxiliary electrode 102 is heightened by the second flat layer 116 to be further away from the substrate 100 than the auxiliary electrode 102, which facilitates the disconnection between the first electrode layer 108 and the auxiliary electrode 102 during the etching process The electrical connection solves the problem of short circuit between the first electrode layer 108 and the auxiliary electrode 102, thereby improving the yield and stability of the process, and thus shortening the level of the first electrode layer 108 and the auxiliary electrode 102 along the first direction D1 The distance HS1 and the horizontal distance HS2 along the second direction D2 increase the aperture ratio. The pixel structures 10a and 10b have the first portion 1040 of the pixel definition layer 104 in the auxiliary hole AH, thereby shortening the horizontal distance HS1 between the first electrode layer 108 and the auxiliary electrode 102 in the first direction D1 and the second The horizontal distance HS2 in the direction D2, thereby increasing the aperture ratio.

The above summarizes the characteristics of several implementations or embodiments, so that those with ordinary knowledge in the field can better understand the present disclosure from various aspects. Those skilled in the art should understand, and can easily design or modify other processes and structures based on this disclosure, so as to achieve the same purpose and/or to achieve the implementation modes or embodiments introduced herein The same advantages. Those skilled in the art should also understand that these equivalent structures do not deviate from the spirit and scope of the disclosure. Without departing from the spirit and scope of this disclosure, Various changes, substitutions or modifications can be made to this disclosure.

10‧‧‧Pixel structure

100‧‧‧Substrate

102‧‧‧Auxiliary electrode

104‧‧‧Pixel definition layer

106‧‧‧Light-emitting element

108‧‧‧First electrode layer

108P‧‧‧Part

112‧‧‧Active Components

114‧‧‧First flat layer

116‧‧‧Second flat layer

118‧‧‧Gate

120‧‧‧Gate insulation layer

122‧‧‧Semiconductor layer

124‧‧‧Interlayer dielectric layer

126‧‧‧Dip pole

128‧‧‧Source

130‧‧‧Dip pole area

132‧‧‧Source Region

134‧‧‧Access area

136‧‧‧Inorganic insulating layer

138‧‧‧Active layer

140‧‧‧Second electrode layer

142‧‧‧Accommodation space

144‧‧‧Electron transport layer

146‧‧‧Hole Transmission Layer

148‧‧‧hole injection layer

150‧‧‧Electron injection layer

D1‧‧‧First direction

HS1, HS3, HS4‧‧‧Horizontal distance

L1‧‧‧Length

O‧‧‧Open

T1, T2‧‧‧Thickness

TH1‧‧‧First contact hole

TH2‧‧‧Second contact hole

Claims (11)

A pixel structure includes: an active element located on a substrate, wherein the active element includes a drain and a source; a first flat layer on the active element; an auxiliary electrode on the first flat Layer, and the first flat layer is located between the auxiliary electrode and the substrate; a second flat layer is located on the auxiliary electrode and the first flat layer; and a light-emitting element including sequentially arranged on the substrate A first electrode layer, an active layer, and a second electrode layer of, the first electrode layer is located on the second flat layer, and is electrically connected to the drain or the source through a first contact hole, the second The two electrode layers are electrically connected to the auxiliary electrode through a second contact hole, and the auxiliary electrode overlaps the second contact hole in a normal direction of the substrate. The pixel structure according to claim 1, further comprising: a pixel definition layer (PDL) located on the first electrode layer and having an accommodation space, wherein at least a part of the active layer is located in the accommodation space Inside. The pixel structure according to claim 1, wherein a part of the first electrode layer is farther from the substrate than the auxiliary electrode. The pixel structure according to claim 1, wherein a minimum horizontal distance between the first contact hole and the second contact hole is between about 8.5 μm and about 11.5 μm. A pixel structure includes: an active element located on a substrate, wherein the active element includes a drain and a source; a first flat layer on the active element; an auxiliary electrode on the first flat Layer, and the first flat layer is located between the auxiliary electrode and the substrate; a light-emitting element includes a first electrode layer, an active layer and a second electrode layer sequentially disposed on the substrate, wherein the The first electrode layer is electrically connected to the drain or the source through a first contact hole, the second electrode layer is electrically connected to the auxiliary electrode through a second contact hole, and the auxiliary electrode is connected to a normal line of the substrate Overlaps the second contact hole in the direction; and a pixel definition layer (PDL) located on the first electrode layer and having a first part located in an auxiliary hole, the auxiliary hole and the first contact hole are mutually Keep a distance. The pixel structure according to claim 5, wherein the pixel definition layer further has a second part, wherein the second part contacts a side wall of the first electrode layer through the first contact hole, and the second part The extension length toward the substrate is greater than the extension length of the first portion toward the substrate. The pixel structure according to claim 5, wherein the width of the auxiliary hole is between about 3 microns and about 5.5 microns. The pixel structure according to claim 5, wherein the auxiliary electric The distance between the electrode and the substrate is substantially the same as the distance between the first electrode layer on the first flat layer and the substrate, and the auxiliary electrode and the first electrode layer have the same material. The pixel structure according to claim 5, wherein the first flat layer includes a first sub-layer and a second sub-layer, the second sub-layer is located on the first sub-layer, and the first contact hole penetrates The first sub-layer and the second sub-layer, and the auxiliary hole penetrates the second sub-layer. The pixel structure according to claim 9, wherein the auxiliary hole penetrates the first sublayer. A pixel structure includes: an active element located on a substrate, wherein the active element includes a drain and a source; a first flat layer on the active element; an auxiliary electrode on the first flat Layer, and the first flat layer is located between the auxiliary electrode and the substrate; a light-emitting element includes a first electrode layer, an active layer and a second electrode layer sequentially disposed on the substrate, wherein the The first electrode layer is electrically connected to the drain or the source through a first contact hole, the second electrode layer is electrically connected to the auxiliary electrode through a second contact hole, and the auxiliary electrode is connected to a normal line of the substrate Direction overlaps the second contact hole, the minimum horizontal distance between the first electrode layer and the auxiliary electrode along a first direction is between about 3 microns to about 5.5 microns, the first electrode layer and the A second direction between auxiliary electrodes The minimum horizontal distance between each other is between about 3 microns and about 5.5 microns, and the minimum horizontal distance between the first contact hole and the second contact hole along the first direction is between about 9 microns and about 11.5 microns, The minimum horizontal distance between the auxiliary electrode and the first contact hole along the first direction is between about 6 microns and about 8.5 microns, and the first direction and the second direction are orthogonal; and a pixel definition Layer, located on the first electrode layer, and having a first part located in an auxiliary hole, the auxiliary hole and the first contact hole are separated from each other by a distance, the pixel definition layer has an accommodating space, and the active layer At least a part of it is located in the accommodating space.

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