TWI704208B - Adhesive tape for semiconductor processing and method for manufacturing semiconductor wafer or semiconductor component using the tape - Google Patents

Abstract

Provided are an adhesive sheet for semiconductor processing that suppresses wafer scattering and chipping during the dicing step, and does not easily cause adhesive residue, and a method for manufacturing a semiconductor wafer or semiconductor component using the adhesive sheet.

According to the present invention, there is provided an adhesive tape for semiconductor processing containing an adhesive layer on a substrate film, the adhesive component constituting the adhesive layer is 100 parts by mass of (meth)acrylate polymer, and a photopolymerizable compound Is a specific component, 2-20% by mass of the composition of the (meth)acrylate polymer is a monomer containing a carboxyl functional group, with a weight average molecular weight of 100,000 to 700,000, and the photopolymerizable compound is a specific propylene Adhesive tapes for semiconductor processing, such as wafer scattering during the dicing step, that have at least one functional group each and one or more functional groups of methacrylic group, and the total number of functional groups are 4 to 8, and the weight average molecular weight is 1000 to 5000. The tape is a method for manufacturing semiconductor wafers and semiconductor components.

Description

Adhesive tape for semiconductor processing and semiconductor crystal using the tape Method for manufacturing chip or semiconductor component

The present invention relates to an adhesive tape for semiconductor processing and a method for manufacturing a semiconductor wafer or semiconductor component using the tape.

The semiconductor wafer or substrate is bonded to the bonding sheet after the circuit is formed, and then divided (cut) into small component pieces, and transferred to the expansion of the bonding sheet (Expanding), peeling (pickup, pickup) of the component chips from the bonding sheet and other steps. The adhesive sheet (dicing tape) used in these steps preferably has sufficient adhesive force to the cut element chips (chips) during dicing, and at the same time, the adhesive force is reduced to the extent that no glue residue is generated during pickup.

As the adhesive sheet, there is the following adhesive sheet: a base film that is transparent to both ultraviolet rays and electron beams or any active rays of ultraviolet rays and electron beams is coated with an adhesive layer that causes polymerization and curing reaction by ultraviolet rays, etc. . The adhesive sheet is used in the pickup step, that is, after the dicing step, the adhesive layer is irradiated with ultraviolet rays to polymerize and solidify the adhesive layer to reduce the adhesive force, and then the step of picking up the wafer obtained after the dicing.

In recent years, with the miniaturization and thinning of electronic components, the miniaturization of chip sizes has gradually progressed, and chip flying and chipping (chip defects) are likely to occur in the cutting step of semiconductor wafers or substrates, which has reduced the yield main reason. In addition, in the pick-up step, the adhesive layer of the adhesive sheet may be damaged due to the protrusion of the stitches. After the adhesive layer is damaged, the damaged adhesive layer adheres to the chip (residual glue), causing contamination and adversely affecting the assembly steps.

【Existing technical documents】

【Patent Literature】

[Patent Document 1] JP 2004-256793 A

[Patent Document 2] JP 2007-246633 A

The object of the present invention is to provide an adhesive tape for semiconductor processing that can suppress chip scattering and chipping in the dicing step, and is easy to peel off during the pick-up step, and is not prone to contamination such as residual glue, even for small and thin electronic components, and use The tape semiconductor wafer or semiconductor component manufacturing method.

In order to solve the aforementioned problems, the present invention adopts the following means.

(1) An adhesive tape for semiconductor processing, which has an adhesive layer on a base film, and is characterized in that: the adhesive constituting the adhesive layer contains 100 parts by mass of a (meth)acrylate polymer, and photopolymerizable 20~150 parts by mass of compound, 1~10 parts by mass of curing agent, 1~10 parts by mass of photopolymerization initiator, 2~20% by mass of the (meth)acrylate polymer is a monomer containing a carboxyl group, weight average The molecular weight (weight average molecular weight) is 100,000 to 700,000, the photopolymerizable compound contains at least one acryloyl group and at least one methacryloyl group, and 4 to 8 in total, and the weight average molecular weight is 1,000 to 5,000.

(2) The adhesive tape for semiconductor processing according to (1), wherein the carboxyl group-containing monomer is acrylic acid.

(3) A method for manufacturing a semiconductor wafer or semiconductor component, characterized by having the following steps: a step of attaching, attaching the adhesive tape for semiconductor processing described in (1) or (2) to a semiconductor wafer or substrate, And a ring frame; a cutting step, cutting the semiconductor wafer or the substrate into semiconductor wafers or semiconductor parts; a light irradiation step, irradiating active light on the adhesive tape for semiconductor processing; an extending step, to enlarge the semiconductor The gap between the wafer or the semiconductor component is stretched on the adhesive tape for semiconductor processing; and the pickup step is to pick up the semiconductor wafer or the semiconductor component from the adhesive tape for semiconductor processing.

According to the present invention, it is possible to provide an adhesive tape for semiconductor processing that can suppress chip scattering and chipping in the dicing step, is easy to pick up, and does not easily cause adhesive residue even for small and thin electronic components, and semiconductor wafers or semiconductor components using the tape的制造方法。 Manufacturing method.

Hereinafter, preferred embodiments of the present invention will be described. In addition, the embodiment described below is only an example of a representative embodiment of the present invention, and the scope of the present invention will not be interpreted too narrowly.

<Term Description>

In this specification, compounds containing (methyl) such as (meth)acrylic acid refer to the general term for compounds containing "methyl" in the name and compounds not containing "methyl".

The adhesive tape for semiconductor processing of the present invention contains an adhesive layer on the base film, and the adhesive constituting the adhesive layer contains 100 parts by mass of (meth)acrylate polymer, 20 to 150 parts by mass of photopolymerizable compound, and curing agent 1~10 parts by mass, 1~10 parts by mass of photopolymerization initiator, The 2-20% by mass of the (meth)acrylate polymer is a monomer containing a carboxyl group, and the weight average molecular weight is 100,000 to 700,000. The photopolymerizable compound contains at least an acrylic group and a methacrylic acid group. 1 or more, and 4 to 8 in total, with a weight average molecular weight of 1000 to 5000.

((Meth)acrylate copolymer)

In the present invention, as the (meth)acrylate copolymer, there are a polymer obtained by polymerizing a monomer having a carboxyl group such as (meth)acrylic acid and its ester monomer, and an unsaturated monomer copolymerizable with these monomers. Copolymer (for example, vinyl acetate, styrene, acrylonitrile) copolymerized. In the adhesive of this embodiment, 2-20% by mass in the (meth)acrylate polymer is a carboxyl group-containing monomer. If the mixing ratio of the carboxyl group-containing monomer is less than 2% by mass, the adhesion to the adherend will be insufficient, resulting in reduced wafer retention during dicing, and wafer scattering will occur. Conversely, if the mixing ratio of the carboxyl group-containing monomer is greater than 20% by mass, the modulus of elasticity is too high, the adhesive and the adherend are insufficiently adhered, and chip flying occurs during dicing.

The weight average molecular weight of the (meth)acrylate polymer is 100,000 to 700,000. If the weight average molecular weight of the (meth)acrylate polymer is less than 100,000, the modulus of elasticity is too low and cracking occurs during cutting. On the other hand, if the weight average molecular weight of the (meth)acrylate polymer is more than 700,000, the modulus of elasticity is too high, the adhesive and the adherend are insufficiently adhered, and the chip is scattered during dicing.

As the ester monomer of the (meth)acrylic polymer, for example, butyl (meth)acrylate, 2-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate , Octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)propylene Nonyl acid, decyl (meth)acrylate, lauryl (meth)acrylate, methyl (meth)acrylate, ethyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylic acid Tridecyl ester, tetradecyl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate Ester etc.

Examples of the carboxyl group-containing monomer include methacrylic acid, crotonic acid, maleic acid, itaconic acid, fumaric acid, acrylamide-N-glycolic acid, and cinnamic acid, and methacrylic acid is preferred. For acrylic acid, by containing a curing agent, the adhesive force can be adjusted more accurately, which is particularly preferred.

(Photopolymerizable compound)

As the photopolymerizable compound in the present invention, a urethane acrylate oligomer is used. The urethane acrylate oligomer can be obtained, for example, by reacting a polyisocyanate containing an acryloxy group or a methacryloxy group with a (meth)acrylate containing a hydroxyl group.

As the polyvalent isocyanate compound, for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, 4,4- Diphenylmethane diisocyanate, trimethylhexamethylene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, etc.

In addition, hydroxyl-containing (meth)acrylates, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, polyethylene glycol (meth)acrylate, pentapentane Tetraol triacrylate, glycidyl di(meth)acrylate, dipentaerythritol monohydroxy pentaacrylate, etc.

The mixing amount of the photopolymerizable compound is 20 to 150 parts by mass relative to 100 parts by mass of the (meth)acrylate copolymer, and preferably 50 to 100 parts by mass. If the mixing amount of the photopolymerizable compound is less than 20 parts by mass, the releasability of the adhesive sheet after light irradiation is reduced, and pickup failure of the semiconductor wafer is likely to occur. If the mixing amount of the photopolymerizable compound is more than 150 parts by mass, the light irradiation step may cause the elastic modulus of the adhesive to be too high, gel cracking occurs in the pickup step, resulting in a decrease in productivity.

The photopolymerizable compound has a weight average molecular weight of 1,000 to 5,000, and contains at least one acryloyl group and at least one methacryloyl group, and 4 to 8 in total. If the weight average molecular weight of the photopolymerizable compound is less than 1,000, the adhesive will be picked up during dicing and adhesive residue will occur on the wafer. On the other hand, if the weight average molecular weight of the photopolymerizable compound is greater than 5000, the modulus of elasticity will be too high due to ultraviolet curing, and wafer loosening occurs during pickup. In addition, when the total number of acrylic groups and methacrylic groups is 3 or less, the curability of the adhesive after irradiated with ultraviolet rays or the like is reduced, which is likely to cause pick-up failure. When the total is 9 or more, the light irradiation step causes the adhesive to change. It is fragile, and gel cracking occurs during the picking step, resulting in lower productivity.

(Hardener)

As the curing agent, a polyfunctional isocyanate curing agent, a polyfunctional epoxy curing agent, an oxypropylene compound, a melamine compound, and the like can be cited.

As the polyfunctional isocyanate curing agent, for example, an aromatic polyisocyanate curing agent, an aliphatic polyisocyanate curing agent, and an alicyclic polyisocyanate curing agent are used, and an adduct of a dimer or more is generally used.

The aromatic polyisocyanate is not particularly limited, and examples include 1,3-phenylene diisocyanate, 4,4'-diphenyl diisocyanate, 1,4-phenylene diisocyanate, 4,4'-diphenylmethane group Diisocyanate, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-toluidine diisocyanate, 2,4,6-triisocyanate toluene, 1,3,5-triisocyanate benzene, biphenyl Anisidine diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4',4'-triphenylmethane triisocyanate, ω,ω'-diisocyanate-1,3-dimethylbenzene, ω , Ω'-diisocyanate-1,4-dimethylbenzene, ω,ω'-diisocyanate-1,4-diethylbenzene, 1,4-tetramethylxylene diisocyanate and 1,3- Tetramethylxylene diisocyanate, etc.

The aliphatic polyisocyanate is not particularly limited, and examples include trimethylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, pentamethylene diisocyanate, 1,2-propylene diisocyanate, 2,3-Butylene diisocyanate, 1,3-butylene diisocyanate, dodecamethylene diisocyanate and 2,4,4-trimethylhexamethylene diisocyanate.

The alicyclic polyisocyanate is not particularly limited. For example, there are 3-isocyanatomethyl-3,5,5-trimethylcyclohexyl isocyanate, 1,3-cyclopentane diisocyanate, and 1,3-ring Hexane diisocyanate, 1,4-cyclohexane diisocyanate, methyl-2,4-cyclohexane diisocyanate, methyl 2,6-cyclohexane diisocyanate, 4,4'-methylenebis(cyclohexylisocyanate), 1,4-bis(isocyanatomethyl)cyclohexane, and 1,4-bis( Isocyanatomethyl)cyclohexane.

Among polyisocyanates, 1,3-benzene diisocyanate, 4,4'-diphenyl diisocyanate, 1,4-benzene diisocyanate, 4,4'-diphenylmethane diisocyanate, 2,4-toluene are preferably used Diisocyanate, 2,6-toluene diisocyanate, 4,4'-toluidine diisocyanate, hexamethylene diisocyanate.

Multifunctional epoxy curing agents are mainly compounds containing more than 2 epoxy groups and more than 1 tertiary nitrogen atom, such as N‧N-glycidylaniline, N‧N-glycidyltoluidine, m-N ‧N-glycidylaminophenol glycidyl ether, p-N‧N-glycidylaminophenol glycidyl ether, triglycidyl isocyanurate, N‧N‧N'‧N'-tetraglycidyl two Amino diphenylmethane, N‧N‧N'‧N'-tetraglycidyl metaxylylenediamine, N‧N‧N'‧N'‧N"-pentaglycidyl diethylenetriamine, etc.

The mixing amount of the curing agent is 1 to 10 parts by mass with respect to 100 parts by mass of the (meth)acrylate copolymer, preferably 1.5 to 5 parts by mass. If the mixing amount of the curing agent is less than 1 part by mass, adhesive residue is likely to occur. On the other hand, if the mixing amount of the curing agent is more than 10 parts by mass, it will cause insufficient adhesion, loose wafers, and reduce productivity.

(Photopolymerization initiator)

As the photopolymerization initiator, benzoin, benzoic acid alkyl ethers, acetophenones, anthraquinones, thioxanthones, ketals, benzophenones, xanthones, etc. are used.

Examples of benzoin include benzoin, benzoin methyl ether, benzoin ethyl ether, and benzoin propyl ether.

Examples of acetophenone include benzoin alkyl ethers, acetophenone, 2,2-dimethoxy-2-acetophenone, 2,2-diethoxy-2-acetophenone, 1 , 1-Dichloroacetophenone and so on.

As the anthraquinones, there are 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquinone, and the like.

Examples of thioxanthones include 2,4-dimethylthioxanthone, 2,4-diisopropylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone, etc. .

Examples of ketals include acetophenone dimethyl ketal, benzyl dimethyl ketal, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, bibenzyl , Biacetin, β-chloroanthraquinone, etc.

The mixing amount of the photopolymerization initiator is 1 to 10 parts by mass with respect to 100 parts by mass of the (meth)acrylate polymer, preferably 1.5 to 5 parts by mass. If the mixing amount is less than 1 part by mass, light irradiation Later, the peelability from the adhesive sheet is reduced, and it is easy to cause poor pickup of semiconductor chips. If the mixing amount is more than 10 parts by mass, the photopolymerization initiator oozes to the surface of the adhesive, causing contamination.

In the photopolymerization initiator, one type or two or more types of conventionally known photopolymerization accelerators may be used in combination as necessary.

Among the photopolymerization accelerators, benzoic acid-based or tertiary amines can be used. Examples of tertiary amines include triethylamine, tetraethylpentamine, dimethylamino ether, and the like.

(Adhesive and resin)

As the adhesion-imparting resin, a terpene phenol resin obtained by completely or partially hydrogenating a terpene phenol resin can be added.

(Additives, etc.)

Various additives such as softeners, anti-aging agents, fillers, conductive agents, ultraviolet absorbers, and light stabilizers can be added to the adhesive.

The thickness of the adhesive layer is preferably 3 to 7 μm. If the adhesive layer is too thick, it is easy to cause cracking. If the thickness of the adhesive layer is too thin, the adhesive force may become too low, resulting in reduced wafer retention during dicing, resulting in wafer scattering, or peeling between the ring frame and the sheet.

(Base film)

As the material of the base film, for example, polyvinyl chloride, polyethylene terephthalate, ethylene-vinyl acetate copolymer, ethylene acrylic acid-acrylate film, ethylene-ethyl acrylate copolymer, polyethylene, Polypropylene, propylene-based copolymers, ethylene-acrylic acid copolymers, and ethylene-(meth)acrylic acid copolymers or ethylene-(meth)acrylic acid-(meth)acrylate copolymers, etc., are crosslinked with metal ions and metals Resulting ionomer resin and so on. The base film may also be a mixture or copolymer of these resins.

The base film may be a single-layer or multi-layer film or sheet composed of the above-mentioned materials, or may be a film formed by laminating films or the like composed of different materials. The thickness of the base film is preferably 50 to 200 μm, and most preferably 70 to 150 μm.

It is preferable to perform antistatic treatment on the base film. As the antistatic treatment, there are treatment of mixing an antistatic agent on the base film, treatment of applying an antistatic agent on the surface of the base film, and treatment based on corona discharge.

As the antistatic agent, for example, a quaternary ammonium salt can be used. Examples of the quaternary ammonium salt monomer include dimethylaminoethyl (meth)acrylate quaternary ammonium chloride, diethylaminoethyl (meth)acrylate quaternary ammonium chloride, and methyl ethyl (meth)acrylate. The quaternary ammonium chloride of ethyl aminoethyl, the quaternary ammonium chloride of p-dimethylaminostyrene and the quaternary ammonium chloride of p-diethylaminostyrene. Among them, dimethylaminoethyl methacrylate quaternary ammonium chloride is preferred.

The method of using the sliding agent and the antistatic agent is not particularly limited. For example, the adhesive can be coated on one side of the substrate film, and both or one of the sliding agent and the antistatic agent can be coated on the back of the substrate film. Two or one of the antistatic agents is mixed into the resin of the base film to form a sheet.

The adhesive can be laminated on one side of the base film, and the other side can be an embossed surface with an average surface roughness (Ra) of 0.3 to 1.5 μm. By providing an embossed surface on the machine tool side of the spreading device, the base film can be easily expanded in the spreading step after cutting.

In order to improve the ductility after cutting, a sliding agent may be applied to the adhesive non-contact surface of the base film, or a sliding agent may be mixed in the base film.

The sliding agent is not particularly limited as long as it reduces the coefficient of friction between the adhesive sheet and the stretching device. Examples include organosilicon compounds such as silicone resin or (modified) silicone oil, fluororesin, hexagonal boron nitride, carbon black, and Molybdenum disulfide, etc. These friction reducers can also mix multiple components. Since the manufacture of electronic components is performed in a clean room, it is preferable to use organic silicon compounds or fluororesins. Among organosilicon compounds, especially copolymers with organosilicon macromonomer units have good compatibility with the antistatic layer, and can achieve a balance between antistatic properties and ductility, and are therefore preferably used.

The steps of the manufacturing method of the electronic component of the present invention will be described.

(1) Attaching steps

In the attaching step, the adhesive tape for semiconductor processing is attached to the semiconductor wafer or substrate and the ring frame. The wafer may be a silicon wafer, a gallium nitride wafer, a silicon carbide wafer, or a sapphire wafer. The substrate may be a general-purpose substrate such as a package substrate, an LED package substrate, and a porcelain substrate formed by packaging a chip with resin.

(2) Cutting steps

In the dicing step, a silicon wafer or the like is diced to form a semiconductor wafer or semiconductor component.

(3) Light irradiation step

In the light irradiation step, the curable adhesive layer is irradiated with active rays such as ultraviolet rays from the base film side. As the light source of ultraviolet rays, low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, metal halide lamps, and black light lamps can be used. In addition, an electron beam may be used instead of ultraviolet rays, and α rays, β rays, and γ rays may be used as the light source of the electron beam.

Light irradiation causes the adhesive layer to be three-dimensionally reticulated and cured, and the adhesive force of the adhesive layer decreases. The adhesive tape for semiconductor processing of the present invention does not excessively adhere to a wafer or the like even if heated, and therefore, the adhesive force can be sufficiently reduced by irradiating ultraviolet rays or the like.

(4) Extension and picking steps

In the stretching and picking step, the bonding sheet is stretched in order to expand the distance between the semiconductor wafers, and the wafers or components are pushed up with pins or the like. After that, use a vacuum chuck or a pneumatic chuck to attract the wafer or component to peel it from the adhesive layer of the adhesive tape for semiconductor processing and pick it up. take. The adhesive sheet of the present invention can maintain the elastic modulus of the adhesive by irradiation with ultraviolet rays and the like, and at the same time, can fully reduce the adhesive force. Therefore, the peeling between the wafer or the component and the adhesive layer becomes easy, the pick-up is good, and there is no residual glue And other undesirable phenomena.

<Manufacture of adhesive tape for semiconductor processing>

Coating an adhesive layer on the base film to manufacture adhesive tapes for semiconductor processing. As its manufacturing method, there are, for example, a method of directly coating the adhesive on the substrate film using a coater such as a gravure coater, a comma coater, a bar coater, a knife coater, or a roll coater; on the release film The method of applying adhesive/adhesive to the base film after drying. You can also use relief printing, gravure printing, offset printing, flexographic printing, offset printing, or screen printing to print the adhesive on the substrate film.

The adhesive composition and the adhesive tape for semiconductor processing according to the examples and the comparative examples were produced according to the following formulations. The mixing components and results are shown in Tables 1 to 3.

【Table 1】

In Tables 1 to 3, the numerical values related to the (meth)acrylate polymer, photopolymerizable compound, curing agent, and photoinitiator indicate parts by mass when the (meth)acrylate copolymer is 100 parts. In addition, the specific components of the (meth)acrylate copolymer, photopolymerizable compound, curing agent, and photopolymerization initiator are as follows.

<(Meth)acrylate polymer>

‧(Meth)acrylate polymer a~d:

A copolymer of 38% by mass of 2-ethylhexyl acrylate, 60% by mass of methyl acrylate, and 2% by mass of acrylic acid, and the weight average molecular weight was adjusted to 100,000, 300,000, 500,000, and 700,000.

‧(Meth)acrylate polymer e~h:

The copolymer of 32% by mass of 2-ethylhexyl acrylate, 60% by mass of methyl acrylate, and 8% by mass of acrylic acid has a weight average molecular weight adjusted to 100,000, 300,000, 500,000, and 700,000.

‧(Meth)acrylate polymer i~l:

The copolymer of 18% by mass of 2-ethylhexyl acrylate, 68% by mass of methyl acrylate, and 14% by mass of acrylic acid has a weight average molecular weight adjusted to 100,000, 300,000, 500,000, and 700,000.

‧(Meth)acrylate polymer m~p:

The copolymer of 20% by mass of 2-ethylhexyl acrylate, 60% by mass of methyl acrylate, and 20% by mass of acrylic acid has a weight average molecular weight adjusted to 100,000, 300,000, 500,000, and 700,000.

‧(Meth)acrylate polymer q~s:

The copolymer of 22% by mass of 2-ethylhexyl acrylate, 68% by mass of methyl acrylate, and 10% by mass of acrylic acid has a weight average molecular weight adjusted to 400,000, 50,000, and 800,000.

‧(Meth)acrylate polymer:

A copolymer of 39% by mass of 2-ethylhexyl acrylate, 60% by mass of methyl acrylate, and 1% by mass of acrylic acid has a weight average molecular weight adjusted to 400,000.

‧(Meth)acrylate polymer u:

A copolymer of 35% by mass of 2-ethylhexyl acrylate, 60% by mass of methyl acrylate, and 21% by mass of acrylic acid has a weight average molecular weight adjusted to 400,000.

<Photopolymerizable compound>

‧Photopolymerizable compound a: A diisocyanate compound (Laromer LR9000 manufactured by BASF Corporation) containing acryloxy and methacryloxy A urethane acrylate having three acryloyl groups and three methacryloyl groups and a weight average molecular weight of 3,000 obtained by reacting with a compound with one hydroxyl group (Light Ester G-201P manufactured by Kyoeisha Chemical Co., Ltd.).

‧Photopolymerizable compound b: reacts a diisocyanate compound containing two acryloxy groups with a compound containing one methacryloxy group and one hydroxyl group (2-hydroxyethyl methacrylate manufactured by Mitsubishi Gas Chemical) The obtained urethane acrylate containing two acryl groups and two methacryl groups and a weight average molecular weight of 1,000.

‧Photopolymerizable compound c: A compound containing two diisocyanates each containing an acryloxy group and a methacryloxy group, and a compound containing one each of an acryloxy group, a methacryloxy group and a hydroxyl group (together Light Ester G-201P manufactured by Eisha Chemical Co., Ltd.) is a urethane acrylate having 4 acryloyl groups and 4 methacryloyl groups and a weight average molecular weight of 5,000 obtained by reaction.

‧Photopolymerizable compound d: A diisocyanate compound containing one acryloxy group and a compound containing one methacryloxy group and one hydroxyl group (2-hydroxyethyl methacrylate manufactured by Mitsubishi Gas Chemical Ester) A urethane acrylate having a weight average molecular weight of 500, containing one acryloyl group and two methacryloyl groups, obtained by the reaction.

‧Photopolymerizable compound e: a diisocyanate compound containing two acryloxy groups and three methacryloxy groups, and a compound containing one each of acryloxy group, methacryloxy group and hydroxyl group (Light Ester G-201P manufactured by Kyoeisha Chemical Co., Ltd.) A urethane acrylate having 4 acryloyl groups and 5 methacryloyl groups and a weight average molecular weight of 8,000 obtained by reaction.

<curing agent>

‧Curing agent a: 2,4-toluene diisocyanate trimethylolpropane adduct (CORONATE L-45E manufactured by Tosoh).

‧Curing agent b: Trimethylolpropane adduct of hexamethylene diisocyanate (CORONATE HL manufactured by Tosoh).

<Photoinitiator>

‧Photoinitiator a: 1-hydroxycyclohexylphenone (IRGACURE184 manufactured by BASF).

‧Photopolymerization initiator b: benzyl dimethyl ketal (IRGACURE651 manufactured by BASF).

(1) Weight average molecular weight

Measured by gel permeation chromatography (GPC).

Device: GPC-8020 SEC system (manufactured by Tosoh)

Column: TSK Guard HZ-L+HZM-N 6.0×150mm×3

Flow rate: 0.5ml/min

Detector: RI-8020

Concentration: 0.2wt/Vol%

Injection volume: 20μL

Column temperature: 40℃

System temperature: 40℃

Solvent: THF

Calibration curve: made using standard polystyrene (manufactured by PL).

Weight average molecular weight (Mw): Polystyrene conversion value.

(2) Evaluation of chipping, wafer retention, pickup and contamination

The adhesive tape for semiconductor processing is attached to a silicon wafer with a diameter of 8 inches × a thickness of 0.15 mm on which a dummy circuit pattern is formed, and a ring frame, and then diced and picked up.

The conditions of the cutting step are as follows.

Cutting device: DAD341 manufactured by DISCO

Cutting blade: NBC-ZH205O-27HEEE manufactured by DISCO

Cutting blade shape: outer diameter 55.56mm, blade width 35μm, inner diameter 19.05mm

Cutting blade speed: 40,000rpm

Cutting blade feed speed: 100mm/sec

Cutting size: 1.0mm square

Cut into the bonding sheet: 30μm

Cutting water temperature: 25℃

Cutting water volume: 1.0L/min

The conditions of the pickup step are as follows.

Pickup device: CAP-300II manufactured by Canon Machinery

Extension: 8mm

Pin shape: 70μmR

Number of pins: 1

Pin push up height: 0.5mm

The following evaluation was performed in the cutting step and the picking step.

(2-1) Cracked

Randomly select 50 wafers picked up by the chipping, observe the 4 sides of the back of the wafer with a microscope at 500 times, and evaluate the size of the largest defect according to the following criteria.

◎(Excellent): The size of the largest defect is less than 25μm

○ (Good): The size of the largest defect is 25μm or more and less than 50μm

× (not possible): The maximum defect size is 50μm or more

(2-2) Wafer retention

Wafer retention was evaluated based on the following criteria based on the remaining rate of the semiconductor wafer held by the dicing tape after the dicing step.

◎(Excellent): Chip scattering is less than 5%

○(Good): The chip scattering is more than 5% and less than 10%

× (not possible): chip scattering is more than 10%

(2-3) Pickup

The pick-up performance was evaluated based on the ratio of semiconductor wafers that can be picked up in the pick-up step, based on the following criteria.

◎(Excellent): The success rate of chip picking is over 95%

○(Good): The picking success rate of the wafer is above 80% and below 95%

× (not possible): The picking success rate of the wafer is less than 80%

(2-4) Pollution

Attach the adhesive sheet to the silicon mirror wafer, and after 20 minutes, use a high-pressure mercury lamp to irradiate 150mJ/cm2 of ultraviolet rays, and then peel off the adhesive sheet. A particle counter was used to measure the number of particles above 0.28 μm remaining on the attaching surface of the silicon mirror wafer.

◎(Excellent): The number of particles is less than 500

○ (good): The number of particles is 501 or more and less than 2000.

X (not possible): The number of particles is 2000 or more.

(2-5) Chip loose

Wafer looseness was evaluated according to the following criteria based on the proportion of semiconductor wafers adjacent to the semiconductor wafers to be picked up due to the impact of pin pins that were loosened during the pickup step.

◎(Excellent): Chip looseness is less than 1%

○(Good): The chip looseness is more than 1% and less than 3%

× (not possible): the chip looseness is more than 3%

(2-6) Comprehensive judgment

In the above evaluation of chipping to wafer looseness, the worst evaluation result is used as a comprehensive judgment.

According to the results of Tables 1, 2 and 3, it can be seen that the adhesive tape for semiconductor processing according to the embodiment of the present invention can suppress chip flying and chipping in the dicing step, is easy to peel off in the picking step, and is less likely to cause contamination such as glue residue.

Claims (3)

An adhesive tape for semiconductor processing, which has an adhesive layer on a substrate film, and is characterized in that the adhesive constituting the adhesive layer contains 100 parts by mass of a (meth)acrylate polymer and a photopolymerizable compound 20 ~150 parts by mass, 1~10 parts by mass of curing agent, 1~10 parts by mass of photopolymerization initiator, 2~20% by mass of the (meth)acrylate polymer is a monomer containing a carboxyl group, and the weight average molecular weight is Between 100,000 and 500,000, the photopolymerizable compound contains at least one acryl group and at least one methacryl group, and contains 4 to 8 in total, and has a weight average molecular weight of 1,000 to 5,000. The adhesive tape for semiconductor processing according to claim 1, wherein the carboxyl group-containing monomer is acrylic acid. A method for manufacturing a semiconductor wafer or a semiconductor component, characterized in that it has the following steps: an attaching step of attaching the adhesive tape for semiconductor processing described in claim 1 or 2 to the semiconductor wafer or substrate and the ring frame; The dicing step is to cut the semiconductor wafer or the substrate into semiconductor wafers or semiconductor parts; the light irradiation step is to irradiate the adhesive tape for semiconductor processing with active light; the stretching step is to enlarge the semiconductor wafer or the semiconductor The space between the components is stretched on the adhesive tape for semiconductor processing; the picking step is to pick up the semiconductor wafer or the semiconductor component from the adhesive tape for semiconductor processing.