TWI703901B - Plasma processing device - Google Patents

Abstract

Provided is a plasma processing device with plasma resistance and a lightweight metal window.

The plasma processing device (1) that performs plasma processing on the substrate (G) to be processed in the processing space (100) is equipped with a processing container (10) that places the substrate (G) to be processed in a grounded metal , 11) The metal window (3) formed by arranging a plurality of conductive partial windows (30) side by side in the mounting table in 11) forms a processing space (100) by blocking the opening on the upper side of the processing container (10, 11), A resin insulating member (31) is arranged between adjacent partial windows (30). The ceramic insulating member cover (20) covers the surface of the insulating member (31) on the side of the processing space. On the upper side of the metal window (3), a device is provided to make the processing gas plasma by inductive coupling. Plasma antenna (5).

Description

Plasma processing device

The present invention relates to a plasma processing device that performs plasma processing of a substrate to be processed by using plasmaized processing gas.

In the manufacturing process of flat panel displays (FPD) such as liquid crystal display devices (LCD), there is a process of supplying plasma-forming processing gas to the substrate to be processed, that is, the glass substrate placed in the processing space, and then performing etching or forming processes. Plasma treatment such as membrane treatment. In these plasma processing, various plasma processing apparatuses such as a plasma etching apparatus and a plasma CVD apparatus are used. In recent years, inductively coupled plasma (ICP), which has one of the major advantages of obtaining high-density plasma under high vacuum, has attracted attention as a method of plasmating processing gas.

On the other hand, the size of glass substrates has been increasing in size. For example, a rectangular glass substrate for LCD requires a plasma processing device capable of processing the length of the short side × the long side of about 2200 mm × about 2400 mm, or even about 2800 mm × about 3000 mm.

With the enlargement of glass substrates like this, the plasma The processing device is also moving towards large-scale development. However, the plasma processing device using inductively coupled plasma is installed on the ceiling surface of the processing space, and the rigidity of the dielectric window made of quartz or the like is low, which is an obstacle to the enlargement of the device.

Therefore, Patent Document 1 describes an inductively coupled plasma method in which a metal window with higher rigidity than quartz is divided into a plurality of divided pieces (partial windows) and the divided pieces are insulated from each other, thereby realizing a larger metal window Plasma processing device.

However, Patent Document 1 does not describe the selection of an insulating member suitable for insulating the divided pieces from each other, or the technical matters that should be paid attention to when selecting a specific material.

In addition, Patent Document 2 describes a technique such as the following: In the same inductively coupled plasma system plasma processing device, a dielectric window formed by using a plurality of divided dielectric members is provided with To protect the removable dielectric cover of the dielectric window, the dielectric cover is divided into a plurality of divided pieces. The dielectric cover is provided with a cover plate, which is used to prevent the dielectric window from being damaged or the gap caused by the opening of the gap between the divided pieces when the divided pieces are thermally expanded The deposition of sediments.

However, the cited document 2 is not a document about the technique of using a plurality of conductive partial windows that are insulated from each other to form a metal window.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2015-22806: Patent application Scope item 1, paragraphs 0028~0029, figure 1

[Patent Document 2] Japanese Patent Application Laid-Open No. 2013-149377: No. 1 of the scope of patent application, paragraphs 0042, 0057, Figure 3

The present invention is based on the research conducted under such circumstances, and its object is to provide a plasma processing device having plasma resistance and a lightweight metal window.

The plasma processing device of the present invention is to perform plasma processing by plasmaized processing gas on the substrate to be processed in a processing space that is evacuated. The plasma processing device is characterized by: : A metal processing container is provided with a mounting table on which the substrate to be processed is placed, and the upper surface opposite to the mounting table has an opening and is electrically grounded; a metal window is formed by blocking the opening of the processing container and side by side The aforementioned processing space is composed of a plurality of conductive partial windows; resin-made insulating members are arranged between the aforementioned processing container and partial windows and between adjacent partial windows; ceramic-made insulating member covers cover the aforementioned The surface of the insulating member on the side of the processing space; and the plasma antenna, which is arranged on the aforementioned metal in a manner facing the metal window The upper side of the window is used to plasmaize the processing gas by inductive coupling.

The aforementioned plasma processing device may also have the following configuration.

(a) The insulating member cover is divided into a plurality of partial covers, and a gap cover made of ceramic that covers the gap between adjacent partial covers from the processing space side is provided. The partial cover and the gap cover are connected to the partial window by metal bolts, and a ceramic bolt cover covering the bolts from the processing space side is provided.

(b) In (a), the metal window doubles as a gas shower head for supplying processing gas to the processing space, and the gap cover is for supplying processing gas to at least the substrate to be processed in the processing space Part of the cover in the area.

(c) In order to expand the electrical distance between the processing container and partial windows or adjacent partial windows, the lower surface of the insulating member is formed to extend along the extending direction of the lower surface of the insulating member and have a cross-sectional shape toward the processing space The side protruding ridge portion is formed with a groove part to be fitted into the aforementioned ridge portion in the insulating member cover covering the insulating member.

(d) A section is formed on the opposing side wall surface of the processing container and the partial windows or the side wall surfaces of the adjacent partial windows facing each other. The aforementioned insulating member cover is clamped at its side edge. It is attached to the metal window in the state of stopping at the aforementioned stage. At this time, on the side wall surface of the processing container or partial window lower than the aforementioned section, a notch surface is formed to increase the electrical distance between the processing container and the partial window or adjacent partial windows. Before The insulating member cover is divided into a plurality of partial covers, and the end of one side of the adjacent partial cover overlaps the upper surface of the partial cover on the other side.

(e) The surface on the side of the processing space of the aforementioned partial window is coated with plasma resistance by anodizing or ceramic spraying.

(f) The insulating member is composed of a resin having a volume resistivity greater than that of the ceramic constituting the cover of the insulating member.

Thanks to the present invention, an insulating member made of resin with light weight and high insulation performance is used to insulate the processing container and partial windows and between adjacent partial windows. On the other hand, a ceramic insulating member cover is used. Since the insulating member made of resin is not affected by the plasma, the metal window can be reduced in weight while maintaining the required function of the metal window when the processing gas supplied to the processing space is plasma-formed.

G‧‧‧Glass substrate

1‧‧‧Plasma processing device

10‧‧‧Container body

100‧‧‧Processing space

11‧‧‧Metal frame

13‧‧‧Mounting table

20‧‧‧Insulation member cover

2, 2a~2m, 2A, 2B‧‧‧Part of the cover

21, 21a~21c‧‧‧Gap cover

22‧‧‧Bolt cover

30, 30a~30c‧‧‧Part of the window

31, 31a~31d, 31A, 31B‧‧‧Insulation member

5‧‧‧High frequency antenna

8‧‧‧Control Department

[Fig. 1] A longitudinal sectional side view of the plasma processing apparatus of the embodiment.

[Fig. 2] A plan view of a metal window installed in the aforementioned plasma processing device.

[Fig. 3] An enlarged plan view of the insulating member cover provided on the aforementioned metal window.

[Fig. 4] An enlarged plan view of the metal window in a state where the aforementioned insulating member cover is removed.

[Fig. 5] A first enlarged longitudinal sectional view of the aforementioned metal window.

[Fig. 6] A second enlarged longitudinal sectional view of the aforementioned metal window.

[Fig. 7] A third enlarged longitudinal sectional view of the aforementioned metal window.

[Fig. 8] An enlarged plan view of the insulating member cover on the outer peripheral side of the metal window.

[Fig. 9] A first enlarged longitudinal sectional view of the metal window of the second embodiment.

[Fig. 10] A second enlarged longitudinal sectional view of the metal window of the second embodiment.

[Fig. 11] A third enlarged longitudinal sectional view of the metal window of the second embodiment.

[Fig. 12] An enlarged plan view of the metal window of the third embodiment.

[Fig. 13] A first enlarged longitudinal sectional view of the metal window of the third embodiment.

[Fig. 14] A second enlarged longitudinal sectional view of the metal window of the third embodiment.

First, referring to FIGS. 1 and 2, the overall configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described.

The plasma processing device 1 can be used to form a metal film, an ITO film, and an oxide film when forming thin-film transistors on a rectangular substrate such as a glass substrate for FPD (hereinafter referred to as "substrate G") to be processed. Various plasma treatments such as film forming treatments such as etching treatments for etching these films and ashing treatments for photoresist films. Here, as the FPD, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), etc. are exemplified. In addition, the plasma processing apparatus 1 is not limited to the substrate G for FPD, and the various plasma processing described above may be used for the substrate G for solar cell panels.

As shown in the longitudinal cross-sectional side view of FIG. 1, the plasma processing apparatus 1 is provided with a container body 10 in the shape of a rectangular tube made of a conductive material such as aluminum whose inner wall surface is anodized. Sexual grounding. An opening is formed on the upper surface of the container body 10, and the opening is airtightly blocked by a rectangular metal window 3 provided to be insulated from the container body 10. The space surrounded by the container body 10 and the metal window 3 becomes the processing space 100 of the substrate G, and the space above the metal window 3 becomes the antenna room where the high-frequency antenna (plasma antenna) 5 is arranged 50. In addition, on the side wall of the processing space 100, an import/export port 101 for loading/unloading the glass substrate G and a gate valve 102 for opening and closing the import/export port 101 are provided.

On the lower side of the processing space 100, a mounting table 13 for mounting the substrate G is provided so as to face the metal window 3 described above. The mounting table 13 is made of a conductive material, such as aluminum whose surface is anodized. The substrate G placed on the mounting table 13 is sucked and held by an electrostatic clamp (not shown). The mounting table 13 is housed in the insulator frame 14 and is provided on the bottom surface of the container body 10 via the insulator frame 14.

The mounting table 13 is connected to a second high-frequency power source 152 via a matching device 151. The second high-frequency power supply 152 is a high-frequency power for applying a bias voltage to the mounting table 13, for example, a high-frequency power with a frequency of 3.2 MHz. The ions in the plasma generated in the processing space 100 can be introduced to the substrate G by the self-sufficient bias voltage generated by the high-frequency power for the bias voltage.

In addition, in the mounting table 13, in order to control the temperature of the substrate G, A temperature control mechanism composed of heating means such as a ceramic heater and a refrigerant flow path, a temperature sensor, and a gas flow path for supplying He gas for heat transfer to the back of the substrate G (all not shown) are provided Show).

In addition, an exhaust port 103 is formed on the bottom surface of the container body 10, and a vacuum exhaust unit 12 including a vacuum pump or the like is connected to the exhaust port 103. The inside of the processing space 100 is evacuated by the vacuum exhaust unit 12 to a pressure during plasma processing.

As shown in Fig. 1 and a plan view of the metal window 3 viewed from the processing space 100 side, that is, as shown in Fig. 2, on the upper side of the side wall of the container body 10, a rectangular frame made of metal such as aluminum, that is, a metal frame is provided.体11。 Body 11. Between the container body 10 and the metal frame 11, a sealing member 110 for keeping the processing space 100 airtight is provided. Here, the container main body 10 and the metal frame 11 constitute the processing container of this embodiment.

In addition, the metal window 3 of this example is divided into a plurality of partial windows 30, and these partial windows 30 are arranged inside the metal frame 11 to constitute a rectangular metal window 3 as a whole. Each partial window 30 is made of, for example, a non-magnetic and conductive metal, aluminum, or an alloy containing aluminum.

In addition, each partial window 30 also serves as a shower head for supplying processing gas. For example, as shown in FIG. 5, each partial window 30 is formed with a spray plate 305 and a metal window body 303 sequentially stacked from the bottom. The spray plate 305 is formed to supply processing gas to the processing space 100. A plurality of processing gas discharge holes 302, and the metal window body 303 are used to form a processing gas diffusion chamber 301 for diffusing processing gas between the metal window body 303 and the shower plate 305. The spray plate 305 is made of metal bolts 201, and the composition is processed The gas diffusion chamber 301 is connected to the lower surface of the area outside the recessed portion. The partial windows provided with these configurations are held on the ceiling surface side of the processing space 100 via a holding portion not shown.

In addition, in order to improve the plasma resistance of the partial windows 30, the surface of each partial window 30 on the side of the processing space 100 (the lower surface of the shower plate 305) is coated with plasma resistance. As a specific example of resistance to plasma coating, the formation of a dielectric film by anodizing treatment or ceramic spraying can be cited.

As shown in FIG. 1, the processing gas diffusion chamber 301 of each partial window 30 is connected to the processing gas supply unit 42 via a gas supply pipe 41. The processing gas required for the aforementioned film formation processing, etching processing, ashing processing, etc. is supplied from the processing gas supply unit 42. In addition, for the sake of illustration, FIG. 1 shows the state where the processing gas supply unit 42 is connected to one partial window 30, but in fact, the processing gas diffusion chamber 301 of each partial window 30 is connected to the processing gas supply部42.

Furthermore, as shown in FIGS. 1, 5, etc., in each partial window 30, for example, in the metal window body 303, a temperature adjustment flow path 307 for circulating a temperature adjustment fluid for temperature adjustment is formed. The temperature-regulating flow path 307 is connected to the temperature-regulating fluid supply part. According to the temperature detection result of the temperature sensor provided in the partial window 30, the temperature-regulating fluid supplied from the temperature-regulating fluid supply part is used to make Part of the window 30 is adjusted to a preset temperature (the temperature-regulating fluid supply part and the temperature sensor are not shown).

The partial windows 30 divided from each other are electrically insulated from the metal frame 11 or the container body 10 below it by the insulating member 31, and the adjacent partial windows 30 are also insulated from each other by the insulating member 31. E.g As shown in FIG. 5, the insulating member 31 has a longitudinal cross-sectional shape that fits into the gap between the adjacent partial windows 30, and is formed by a section of the opposite side surface of each partial window 30 (in the figure In the example of 5, it is supported by a shower plate 305 protruding from the side wall surface of the metal window body 303).

Here, FIG. 2 is a view of the metal window 3 viewed from the processing space 100 side. Although the insulating member 31 is blocked by the partial cover 2 described later, the insulating member 31 is provided above the arrangement position of the partial cover 2 31.

In the plasma processing apparatus 1 of this example, the insulating member 31 is made of fluororesin such as PTFE (Polytetrafluoroethylene). For example, PTFE has a volume resistivity> 10 ¹⁸ [Ω. cm(23℃)], the density is about 2.1~2.2[g/cm ³ ]. By using the insulating member 31 made of resin like this, and using alumina (volume resistivity>10 ¹⁴ approximately [Ω·cm(23°C)] approximately, density approximately 3.9 [g/cm ³ ]), for example Compared with the case of the material of the insulating member 31, it is possible to simultaneously achieve high insulation performance and the weight reduction of the metal window 3 including the insulating member 31.

Moreover, as shown in FIG. 1, on the upper side of the metal window 3, a top plate portion 61 is arranged, and the top plate portion 61 is supported by a side wall portion 63 provided on the metal frame 11.

The space surrounded by the metal window 3, the side wall portion 63, and the top plate portion 61 described above constitutes the antenna room 50. Inside the antenna room 50, the high-frequency antenna 5 ( figure 1). The high-frequency antenna 5 is arranged to be spaced apart from the partial window 30 via a spacer formed of an insulating member not shown, for example. The high-frequency antenna 5 is located in the plane corresponding to each partial window 30 so as to follow the circumferential direction of the rectangular metal window 3 The circling method is formed in a spiral shape (planar illustration omitted). In addition, the shape of the high-frequency antenna 5 is not limited to a vortex, and may be a loop antenna in which one or a plurality of antenna wires are looped. In addition, a multiple antenna in which a plurality of antenna wires are wound on the side with the angle shifted and the whole is turned into a spiral shape may be adopted. In this way, as long as the antenna wire is arranged in a plane corresponding to the metal window 3 or each partial window 30 constituting the metal window 3 in a circumferential direction, the structure of the high-frequency antenna 5 is irrelevant.

Each high-frequency antenna 5 is connected to a first high-frequency power supply 512 via a matching unit 511. Each high-frequency antenna 5 is supplied with high-frequency power of, for example, 13.56 MHz from the first high-frequency power supply 512 via a matching device 511. Thereby, an eddy current is induced on each surface of the partial window 30 between plasma processing, and an induced electric field is formed in the processing space 100 by the eddy current. The processing gas discharged from the gas discharge hole 302 is plasma-ized in the processing space 100 by the induced electric field.

In addition, as shown in FIG. 1, the plasma processing apparatus 1 is provided with a control unit 8. The control unit 8 is composed of a computer with a CPU (Central Processing Unit) (not shown) and a memory unit. In the memory unit, a program incorporated into a group of steps (commands) for outputting control signals is recorded This control signal executes the operation of vacuum exhausting the processing space 100 in which the substrate G is arranged, and plasmating the processing gas using the high-frequency antenna 5 to process the substrate G. The program is stored in storage media such as hard disk, optical disk, magneto-optical disk, memory card, etc., since these are installed in the memory section.

In the plasma processing device 1 having the above-described configuration In the partial window 30, in order to suppress the damage caused by the plasma generated in the processing space 100, plasma resistant coating is performed by anodizing or ceramic spraying. On the other hand, the insulating member 31 that insulates the metal frame 11 and the partial window 30 or the adjacent partial window 30 from each other is made of resin such as PTFE, which has high insulating properties and is light. However, compared with ceramics such as alumina, the resistance of resin to plasma is not high. Moreover, these resins are also difficult to coat with plasma resistance by anodizing or ceramic spraying.

Therefore, in the plasma processing apparatus 1 of this example, the insulating member 31 is not affected by the plasma by providing a ceramic insulating member cover 20 covering the surface of the insulating member 31 on the processing space 100 side.

Hereinafter, referring to FIGS. 2 to 8, the specific configuration of the insulating member cover 20 will be described.

As shown in FIG. 2, the partial window 30 is divided into various shapes according to the needs. Due to the divided shapes of the partial windows 30, the shape of the insulating member 31 arranged between the metal frame 11 and the partial windows 30 and between the adjacent partial windows 30 becomes complicated. Although the insulating member cover 20 must cover all the surfaces of the insulating members 31 on the side of the processing space 100, it is difficult to cover such a complex-shaped area with the integral insulating member cover 20.

Therefore, the insulating member cover 20 of this example is divided into a plurality of partial covers 2. For example, each partial cover 2 is formed of a ceramic member such as alumina shaped into an elongated flat plate shape. The plurality of partial covers 2 are arranged in parallel to form an insulating member cover 20 covering the arrangement area of the insulating member 31.

However, arranging only a plurality of partial cover bodies 2 will result in the formation of gaps between the adjacent partial cover bodies 2. For such a gap, the opening width is increased due to the expansion of part of the cover 2 caused by the temperature rise during the plasma treatment, so that the plasma enters from here and damages the insulating member 31, or the gap The change in the opening width may cause the deposits deposited in the gap to peel off and contaminate the substrate G.

Therefore, the insulating member cover 20 of this example is formed so that when a plurality of partial covers 2 are combined to form the insulating member cover 20, the damage of the insulating member 31 or the peeling of deposits caused by the above-mentioned gap can be suppressed. constitute.

For example, in the insulating member cover 20 shown in FIG. 2, the area where the gap between the partial cover 2 is formed refers to the area where a plurality of the partial cover 2 merge with each other. In Figure 2, the area formed by the gap like this is surrounded by a dotted line, and symbols (i) ~ (v) are given. Figures 3 to 7 of Figures 3 to 8 described below show the structure of the partial cover 2 installed in the area (i), and Figure 8 shows the structure of the partial cover 2 installed in the area (iv) .

Fig. 3 is a plan view of part of the cover 2 in the area (i) (also marked with the identification code "2a~2c" corresponding to the arrangement position. The following is the same for "2d~2m"); Fig. 4 is the removal of these In the state of partial covers 2a to 2c, the partial windows 30 (also marked with the identification code "30a-30c" corresponding to the placement position) and the insulating member 31 (also marked with the identification code "31a, 31b" corresponding to the placement position. The following is about "31c, 31d" is also the same) plan view. Also, Figures 5 to 7 are along Figures 3 and 4 respectively A vertical cross-sectional side view shown by arrows in the A-A', B-B', and C-C' lines shown by the one-dot chain line.

As shown in FIGS. 3 and 4, in the area (i), an insulating member having a T-shape as viewed from the processing space 100 is installed to fit into the gap between the adjacent partial windows 30a-30c. 31a, 31b. The area (i) covers the insulating members 31a, 31b from the processing space 100 side by arranging three partial covers 2a-2c under the insulating members 31a, 31b.

As shown by the dashed line in Figure 4 or Figures 5 to 7, the width of each partial cover 2a~2c in the short-side direction is formed to cover the underside of the spanning insulating members 31a, 31b and the underside of the partial windows 30a~30c The size of the area on the side periphery. In this way, by covering the insulating members 31a, 31b on the wide partial covers 2a~2c, even when the plasma enters from the side of the partial covers 2a~2c, the plasma can be prevented from reaching the insulating members 31a. , 31b.

Moreover, as shown in FIG. 3, the end part of the partial cover body 2a arrange|positioned adjacent to the end part of the partial cover body 2b, 2c is a part of the corner of the partial cover body 2a. In addition, the partial cover bodies 2b and 2c are arranged so as to fit in the notch. By forming the notch in this way to reduce the width of the partial cover 2a, the regions where the gaps between the partial covers 2b-2a and 2c-2a are formed can be close to each other and enclosed in a smaller area.

Moreover, as shown in Figures 3, 6, and 7, the formation area of these gaps is from the processing space 100 side with a gap cover 21 made of a ceramic flat plate (also marked with identification symbols corresponding to the placement position "21a". Hereinafter, the same applies to "21b, 21c") to cover. As shown in FIG. 7, the gap cover 21a is connected to the lower surface side of the partial window 30a by a metal bolt 202 having a multi-stage head. As a result, the partial cover bodies 2a-2c interposed between the gap cover 21a and the partial window 30a are also connected to the lower surface of the partial window 30a.

Here, as shown in FIG. 7, the head of the metal bolt 202 protrudes from the bottom of the gap cover 21 toward the processing space 100, but the head is made of a ceramic bolt cover 22. cover. For example, between the side peripheral surface of the head and the inner peripheral surface of the recessed portion of the bolt cover 22 accommodating the head, there is provided a screw thread that can be screwed to each other, and the bolt cover 22 is fixed to the aforementioned head.

Although not shown in the longitudinal cross-sectional view, the shower plate 305 of the partial window 30a is connected to the head of the bolt 201 of the metal window body 303, and a part of the shower plate 305 protrudes downward from the lower surface of the shower plate 305. On the other hand, the partial covers 2b and 2c are formed with recesses into which the heads can be inserted. When the gap covers 21a fix the partial covers 2b and 2c, these heads are fitted into the recesses, thereby , Prevent the occurrence of the positional deviation of the partial cover 2b, 2c in the lateral direction.

In the areas (ii) and (iii) in FIG. 2, a gap cover 21 covering the area where part of the cover 2 converges is similarly provided.

Here, the structure of the partial cover 2 described with reference to FIGS. 3 to 7 is not limited to the case where it is applied to all the partial covers 2 provided in the metal window 3. For example, the gas discharge hole formation area 300 shown in FIG. 2 surrounded by a chain line (only part of the gas discharge hole 302 is shown), The area where the processing gas is supplied, and the substrate G is arranged so as to face the area.

Therefore, when the gap between the part of the cover 2 arranged in the gas ejection hole formation area 300 is exposed toward the processing space 100, it is easy for the plasma to enter through the gap, and the deposits deposited in the gap fall on the substrate G. the reason. Therefore, the partial cover 2 (the partial cover 2 provided in the regions (i) to (iii) in FIG. 2) disposed in the gas discharge hole formation area 300 is provided with a covering space from the processing space 100 side Gap cover 21.

On the other hand, there is also a case where it is provided outside the gas discharge hole formation area 300. The example shown in FIG. 2 is the partial lid 2 on the side of the metal frame 11 (the inner wall side of the container body 10). , Is arranged to be far away from the position opposite to the substrate G, and also away from the area where the plasma is formed. In such a case, like the partial cover 2 shown in areas (iv) to (v) in FIG. 2, the gap cover 21 that covers the gap between the adjacent partial covers 2 may not be provided. The simplification of the structure of the partial cover 2 is realized (in FIG. 8, the partial covers 2j and 2k showing the area (iv) are enlarged). In this case, the partial cover 2 is directly connected to the lower surface of the partial window 30 by the bolt 202.

Hereinafter, the function of the plasma processing apparatus 1 of the above-mentioned embodiment will be explained.

First, the gate valve 102 is opened, and the substrate G is transferred from the adjacent vacuum transfer chamber into the processing space 100 through the transfer port 101 by the transfer mechanism (none of which is shown). Next, the substrate G is placed on the mounting table 13, It is fixed by an electrostatic clamp not shown, on the other hand, the aforementioned transport mechanism is retracted from the processing space 100 and the gate valve 102 is closed. In addition, the metal window 3 is adjusted to a preset temperature by the temperature adjustment fluid supplied to the temperature adjustment flow path 307 of each partial window 30.

In addition, the processing gas is supplied into the processing space 100 from the processing gas supply unit 42 through the processing gas diffusion chamber 301 of each partial window 30. On the other hand, the vacuum exhaust unit 12 performs vacuum evacuation in the processing space 100. The pressure in the processing space 100 is adjusted to a pressure environment of about 0.66 to 26.6 Pa, for example. In addition, He gas for thermal conductivity is supplied to the back side of the substrate G.

Next, by applying high-frequency power to the high-frequency antenna 5 from the first high-frequency power supply 512, a uniform induced electric field is generated in the processing space 100 through the metal window 3. As a result, due to the induced electric field, the processing gas is plasma-formed in the processing space 100 to generate high-density inductively coupled plasma. Furthermore, by applying high-frequency power for bias voltage from the second high-frequency power supply 152 to the mounting table 13, ions in the plasma are introduced toward the substrate G, and plasma processing of the substrate G is performed.

Furthermore, when plasma processing is performed only for a preset time, the power supply from each of the high-frequency power supplies 512, 152, the processing gas supply from the processing gas supply unit 42, and the vacuum exhaust in the processing space 100 are stopped, so as When carrying in, carry out substrate G in reverse order.

Inside the processing space 100 described above, when plasma is used for the plasma processing of the substrate G, in the partial window 30, the gap between the adjacent partial covers 2 is from the processing space 100 side to between Cover 21 to cover it. As a result, the penetration of plasma through the aforementioned gap can be suppressed, and damage to the insulating member 31 can be prevented.

In addition, the gap is covered with the gap cover 21, thereby suppressing deposits in the gap or peeling of the deposits, and dropping of the peeled substances on the substrate G arranged opposite to the gap.

Moreover, the area where the insulating member cover 20 is provided is limited to the arrangement area of the metal window 3, thereby, compared with the case where the entire bottom side of the metal window 3 is covered with a ceramic cover, it is possible to include insulation The weight of the metal window 3 of the member 31 or the insulating member cover 20 is reduced. In addition to these, the disposition area of the partial cover 2 made of ceramics, which has a larger specific heat than the metal, is limited to the area defined by the extent to which the insulating member 31 can be covered, thereby improving the metal using the temperature-regulating fluid. Responsiveness during temperature adjustment of window 3.

According to the plasma processing apparatus 1 of this embodiment, the following effects are obtained. Since the insulating member 31 made of resin with light weight and high insulating performance is used, the metal frame 11 or the container body 10 (processing container) and the partial windows 30 and the adjacent partial windows 30 are insulated. On the one hand, the insulating member cover 20 made of ceramic is used to prevent the insulating member 31 from being affected by the plasma. Therefore, it is possible to maintain the required metal window 3 when the processing gas supplied into the processing space 100 is plasma-formed. Function, while making the metal window 3 lighter.

Next, in the second embodiment shown in Figs. 9 to 11, a labyrinth structure is installed for the purpose of preventing short circuits between the metal frame 11 (processing container) and partial windows 30 or adjacent partial windows 30 Insulating structure As an example between the member 31a and the partial cover 2a, the insulating member 31a is arranged between the metal frame 11 and the partial windows 30 or adjacent partial windows 30.

The longitudinal cross-sectional views of FIGS. 9 to 11 show an example in which the above-mentioned labyrinth structure is applied to the insulating members 31a, 31b or partial covers 2a to 2c in the area (i) of FIG. 2 (FIGS. 3, 4). In this example, on the lower surface of each insulating member 31a, 31b, a protruding portion 311 (insulating member 31A) extending along the extending direction of the insulating member 31 and having a cross-sectional shape protruding toward the processing space 100 side is formed. On the other hand, on the upper surface of the partial cover body 2a~2c (partial cover body 2A) constituting the insulating member cover body 20, there is formed a groove 23 (Figures 9 to 11, only Shows the groove 23 of the partial cover 2a).

In this way, the labyrinth structure is provided between the metal frame 11 and the partial window 30 or between the adjacent partial windows 30, whereby the mutual electrical distance is widened, which can prevent the occurrence of a short circuit. The occurrence of undesirable situations where inductively coupled plasma cannot be fully formed.

In addition, the protrusion portion 311 or the groove portion 23 forming the labyrinth structure is not limited to the case where only one row is provided along the extending direction of the insulating member 31, and plural rows may be provided.

Next, the third embodiment shown in FIGS. 12 to 14 is partially compared with the insulating member cover 20 of the first embodiment in which the partial cover 2 is sandwiched between the gap cover 21 and the partial window 30. The installation method of the cover 2B is different. That is, in this example, the metal frame 11 (processing container) and part of the window 30 are opposite to each other on the side walls, or the adjacent part of the window 30 The side walls facing each other form a segment 308, and the partial cover 2B is attached to the metal window 3 by locking the side edge of the partial cover 2B to the segment 308.

For example, FIG. 12 shows an example in which partial covers 21 and 2m (partial covers 2B) are installed so as to cover the insulating members 31a and 31b provided in the area (i) of FIG. 2. Figures 13 and 14 are longitudinal cross-sectional side views shown by arrows along the A-A' line and B-B' line shown by the one-dot chain line in Figure 12.

As shown in FIGS. 13 and 14, in the partial windows 30a-30c of this example, the shower plate 305A on the lower side protrudes outward than the side wall of the metal window body 303 to form a segment 308. As shown in Figure 12, the two partial covers 2m and 21 (2B) are locked by the aforementioned segment 308 at the side edges on both sides (the area shown by the long dashed line in Figure 12 is the placement On the side edge of the segment 308). In addition, the insulating members 31c and 31d (31B) are placed on the partial cover bodies 2m and 21 in a state of being fitted in the gap between the adjacent partial windows 30.

Moreover, as shown by the short dashed line in Fig. 12, and as shown in Fig. 14, one side of the partial cover 21, 2m arranged adjacently, that is, the partial cover 2m, is the partial cover whose end overlaps the other side. The top of the body 2l. By adopting such a laminated structure, even if the gap cover 21 is not provided, the formation of the gap between the partial cover 21 and 2m can be avoided. In addition, as shown in Figures 13 and 14, when stacking adjacent partial covers 21 and 2m, the height position of each partial cover 21 and 2m is also adjusted to lock the side edges. The height position of section 308.

In addition to these, the partial cover bodies 21, 2m are locked to the segment 308 formed in the middle of the side wall surface of the partial window 30, and the insulating members 31c, 31d are provided on the partial cover bodies 21, 2m. In the third embodiment, a region where the insulating members 31c, 31d are not inserted is formed on the lower side of the partial cover bodies 21, 2m. Therefore, in order to prevent the occurrence of short circuit between the partial windows 30 in the area where the insulating members 31c and 31d are not inserted, the side walls of the partial windows 30a-30c on the lower side of the partial cover 21, 2m are formed to enlarge the adjacent The notch surface 306 of the electrical distance of the partial windows 30a-30c is configured.

In the above-described embodiments, the FPD substrate is used as an example of the substrate to be processed. However, as long as it is a rectangular substrate, it can also be applied to plasma processing of other types of substrates such as substrates for solar cell panels.

1‧‧‧Plasma processing device

2‧‧‧Part of the cover

3‧‧‧Metal window

5‧‧‧High frequency antenna

8‧‧‧Control Department

10‧‧‧Container body

11‧‧‧Metal frame

12‧‧‧Vacuum Exhaust Department

13‧‧‧Mounting table

14‧‧‧Insulator frame

30‧‧‧Part of the window

31‧‧‧Insulation member

41‧‧‧Gas supply pipe

42‧‧‧Processing gas supply unit

50‧‧‧Antenna Room

61‧‧‧Top Board

63‧‧‧Sidewall

100‧‧‧Processing space

101‧‧‧Move in and out

102‧‧‧Gate valve

103‧‧‧Exhaust port

110‧‧‧Sealing component

151‧‧‧matcher

152‧‧‧The second high frequency power supply

301‧‧‧Processing gas diffusion chamber

302‧‧‧Gas vent hole

307‧‧‧Temperature flow path

511‧‧‧matcher

512‧‧‧The first high frequency power supply

G‧‧‧Substrate

Claims (9)

A plasma processing device is used to perform plasma processing on a substrate to be processed in a processing space that is evacuated by a plasmaized processing gas. The plasma processing device is characterized by: metal The processing container is equipped with a stage on which the substrate to be processed is placed. The upper surface opposite to the stage has an opening and is electrically grounded; the metal window blocks the opening of the processing container and is arranged side by side to form the processing The space is composed of a plurality of conductive partial windows; resin-made insulating members are arranged between the aforementioned processing container and partial windows and between adjacent partial windows; ceramic-made insulating member covers covering the aforementioned insulating members The surface on the side of the processing space; and the plasma antenna, which is arranged on the upper side of the metal window in a manner opposite to the metal window for plasmating the processing gas by inductive coupling, the insulating member cover, It is divided into a plurality of partial covers, and a gap cover made of ceramic that covers the gap between the adjacent partial covers from the processing space side is provided. For example, the plasma processing device of the first item of the patent application, wherein the aforementioned partial cover and gap cover are connected to the aforementioned partial window by metal bolts, and are provided with ceramics covering the aforementioned bolts from the processing space side Bolt cover. If the plasma processing device of item 1 or 2 is applied for, its Wherein, the metal window doubles as a gas shower head for supplying processing gas to the processing space, and the gap cover is a part of the cover in the area where processing gas is supplied to at least the substrate to be processed in the processing space And set. For example, the plasma processing device of item 1 or 2 of the scope of patent application, wherein, under the aforementioned insulating member, in order to enlarge the electrical distance between the processing container and part of the window or adjacent part of the window, there is formed along the aforementioned The protruding strip part extending in the extending direction of the lower surface of the insulating member and having a cross-sectional shape protruding toward the processing space side is formed with a groove part to be fitted into the protruding strip part in the insulating member cover covering the insulating member. For example, the plasma processing device of the first item of the scope of patent application, wherein a section is formed on the sidewall surfaces of the processing container and the partial windows facing each other or the sidewall surfaces of the adjacent partial windows facing each other. The insulating member cover body is attached to the metal window in a state where the side edge portion is locked to the aforementioned step portion. For example, the plasma processing device of the fifth item of the scope of patent application, wherein the side wall surface of the processing container or part of the window lower than the aforementioned section is formed to expand the processing container and the partial window or the adjacent partial windows. The gap surface of the electrical distance. For example, the plasma processing device of item 5 or 6 of the scope of patent application, wherein the cover of the aforementioned insulating member is divided into a plurality of partial covers, adjacent The end of one side of the partial cover overlaps the upper surface of the partial cover on the other side. For example, the plasma processing device of item 1 or 2 of the scope of patent application, wherein the surface of the processing space side of the aforementioned partial window is coated with plasma resistance by anodizing or ceramic spraying. For example, the plasma processing device of the first or second patent application, wherein the insulating member is made of a resin having a volume resistivity greater than that of the ceramic constituting the cover of the insulating member.

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