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TWI799617B - 半導體元件檢查方法及半導體元件檢查裝置 - Google Patents

半導體元件檢查方法及半導體元件檢查裝置 Download PDF

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Publication number
TWI799617B
TWI799617B TW108125021A TW108125021A TWI799617B TW I799617 B TWI799617 B TW I799617B TW 108125021 A TW108125021 A TW 108125021A TW 108125021 A TW108125021 A TW 108125021A TW I799617 B TWI799617 B TW I799617B
Authority
TW
Taiwan
Prior art keywords
semiconductor element
element inspection
inspection apparatus
inspection method
semiconductor
Prior art date
Application number
TW108125021A
Other languages
English (en)
Other versions
TW202029369A (zh
Inventor
鈴木信介
Original Assignee
日商濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商濱松赫德尼古斯股份有限公司 filed Critical 日商濱松赫德尼古斯股份有限公司
Publication of TW202029369A publication Critical patent/TW202029369A/zh
Application granted granted Critical
Publication of TWI799617B publication Critical patent/TWI799617B/zh

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/303Contactless testing of integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31728Optical aspects, e.g. opto-electronics used for testing, optical signal transmission for testing electronic circuits, electro-optic components to be tested in combination with electronic circuits, measuring light emission of digital circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
TW108125021A 2018-09-26 2019-07-16 半導體元件檢查方法及半導體元件檢查裝置 TWI799617B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018180647A JP7158224B2 (ja) 2018-09-26 2018-09-26 半導体デバイス検査方法及び半導体デバイス検査装置
JP2018-180647 2018-09-26

Publications (2)

Publication Number Publication Date
TW202029369A TW202029369A (zh) 2020-08-01
TWI799617B true TWI799617B (zh) 2023-04-21

Family

ID=69953013

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125021A TWI799617B (zh) 2018-09-26 2019-07-16 半導體元件檢查方法及半導體元件檢查裝置

Country Status (7)

Country Link
US (1) US11971364B2 (zh)
EP (1) EP3859360A4 (zh)
JP (1) JP7158224B2 (zh)
KR (1) KR102698426B1 (zh)
CN (1) CN112752980B (zh)
TW (1) TWI799617B (zh)
WO (1) WO2020066177A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4131350A4 (en) * 2020-06-08 2024-05-08 Hamamatsu Photonics K.K. SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS
JP7374937B2 (ja) * 2021-01-13 2023-11-07 株式会社アドバンテスト 試験装置、試験方法およびプログラム
JP7386190B2 (ja) 2021-01-21 2023-11-24 株式会社アドバンテスト 試験装置、試験方法およびプログラム
JP7355773B2 (ja) 2021-02-26 2023-10-03 株式会社アドバンテスト 試験装置、試験方法およびプログラム
KR102637850B1 (ko) * 2021-11-18 2024-02-19 와이아이케이 주식회사 반도체 디바이스 테스트 장치 및 그것의 리던던시 분석 방법
TWI809730B (zh) * 2021-12-09 2023-07-21 南亞科技股份有限公司 待測元件的多重測試裝置及其測試方法
US12181515B2 (en) 2021-12-09 2024-12-31 Nanya Technology Corporation Apparatus for performing multiple tests on a device under test

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200616060A (en) * 2004-08-02 2006-05-16 Matsushita Electric Industrial Co Ltd Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks
TW200703409A (en) * 2005-03-03 2007-01-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
US20090040512A1 (en) * 2004-04-13 2009-02-12 Komatsu Electronic Metals Co., Ltd. Semiconductor wafer inspection device and method
TW200921126A (en) * 2007-06-29 2009-05-16 Nec Electronics Corp Method and device for inspection and failure analysis
US20150024520A1 (en) * 2012-04-27 2015-01-22 Fuji Electric Co., Ltd. Semiconductor device manufacturing method and manufacturing device
TW201705325A (zh) * 2015-07-31 2017-02-01 台灣積體電路製造股份有限公司 檢測基材中之缺陷之存在與位置的方法 與晶圓
US20170200658A1 (en) * 2016-01-08 2017-07-13 Samsung Electronics Co., Ltd. Methods of inspecting substrates and semiconductor fabrication methods incorporating the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970505B2 (ja) * 1995-11-21 1999-11-02 日本電気株式会社 半導体デバイスの配線電流観測方法、検査方法および装置
JP3875383B2 (ja) 1997-12-02 2007-01-31 株式会社トプコン 表面検査装置
US6104481A (en) * 1997-11-11 2000-08-15 Kabushiki Kaisha Topcon Surface inspection apparatus
JP3698904B2 (ja) * 1999-01-11 2005-09-21 沖電気工業株式会社 半導体評価方法及び欠陥位置特定装置
CN1685220B (zh) * 2002-09-30 2010-04-28 应用材料以色列股份有限公司 暗场检测系统
JP2004327858A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体装置の検査方法および検査装置
JP2007127499A (ja) * 2005-11-02 2007-05-24 Nec Electronics Corp 非破壊検査装置および非破壊検査方法
JP2009300202A (ja) * 2008-06-12 2009-12-24 Toshiba Corp 半導体装置の検査方法及び半導体装置の検査装置
JP2010103320A (ja) * 2008-10-23 2010-05-06 Topcon Corp 半導体検査装置
JP2012222263A (ja) * 2011-04-13 2012-11-12 Renesas Electronics Corp 半導体装置の不良解析方法、チップ状半導体装置の不良解析方法及び半導体装置の動的不良解析装置
JP5894745B2 (ja) * 2011-05-31 2016-03-30 浜松ホトニクス株式会社 集積回路検査装置
JP2015032686A (ja) * 2013-08-02 2015-02-16 信越半導体株式会社 半導体素子の評価方法及び半導体素子の評価装置
JP5996687B2 (ja) * 2015-02-10 2016-09-21 浜松ホトニクス株式会社 検査装置及び検査方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090040512A1 (en) * 2004-04-13 2009-02-12 Komatsu Electronic Metals Co., Ltd. Semiconductor wafer inspection device and method
TW200616060A (en) * 2004-08-02 2006-05-16 Matsushita Electric Industrial Co Ltd Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks
TW200703409A (en) * 2005-03-03 2007-01-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
TW200921126A (en) * 2007-06-29 2009-05-16 Nec Electronics Corp Method and device for inspection and failure analysis
US20150024520A1 (en) * 2012-04-27 2015-01-22 Fuji Electric Co., Ltd. Semiconductor device manufacturing method and manufacturing device
TW201705325A (zh) * 2015-07-31 2017-02-01 台灣積體電路製造股份有限公司 檢測基材中之缺陷之存在與位置的方法 與晶圓
US20170200658A1 (en) * 2016-01-08 2017-07-13 Samsung Electronics Co., Ltd. Methods of inspecting substrates and semiconductor fabrication methods incorporating the same

Also Published As

Publication number Publication date
WO2020066177A1 (ja) 2020-04-02
TW202029369A (zh) 2020-08-01
EP3859360A4 (en) 2022-06-15
JP7158224B2 (ja) 2022-10-21
JP2020051858A (ja) 2020-04-02
US11971364B2 (en) 2024-04-30
CN112752980B (zh) 2024-12-03
EP3859360A1 (en) 2021-08-04
KR20210062623A (ko) 2021-05-31
US20210270752A1 (en) 2021-09-02
KR102698426B1 (ko) 2024-08-26
CN112752980A (zh) 2021-05-04

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