TWI799617B - 半導體元件檢查方法及半導體元件檢查裝置 - Google Patents
半導體元件檢查方法及半導體元件檢查裝置 Download PDFInfo
- Publication number
- TWI799617B TWI799617B TW108125021A TW108125021A TWI799617B TW I799617 B TWI799617 B TW I799617B TW 108125021 A TW108125021 A TW 108125021A TW 108125021 A TW108125021 A TW 108125021A TW I799617 B TWI799617 B TW I799617B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor element
- element inspection
- inspection apparatus
- inspection method
- semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/303—Contactless testing of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31728—Optical aspects, e.g. opto-electronics used for testing, optical signal transmission for testing electronic circuits, electro-optic components to be tested in combination with electronic circuits, measuring light emission of digital circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018180647A JP7158224B2 (ja) | 2018-09-26 | 2018-09-26 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP2018-180647 | 2018-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202029369A TW202029369A (zh) | 2020-08-01 |
| TWI799617B true TWI799617B (zh) | 2023-04-21 |
Family
ID=69953013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108125021A TWI799617B (zh) | 2018-09-26 | 2019-07-16 | 半導體元件檢查方法及半導體元件檢查裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11971364B2 (zh) |
| EP (1) | EP3859360A4 (zh) |
| JP (1) | JP7158224B2 (zh) |
| KR (1) | KR102698426B1 (zh) |
| CN (1) | CN112752980B (zh) |
| TW (1) | TWI799617B (zh) |
| WO (1) | WO2020066177A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4131350A4 (en) * | 2020-06-08 | 2024-05-08 | Hamamatsu Photonics K.K. | SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS |
| JP7374937B2 (ja) * | 2021-01-13 | 2023-11-07 | 株式会社アドバンテスト | 試験装置、試験方法およびプログラム |
| JP7386190B2 (ja) | 2021-01-21 | 2023-11-24 | 株式会社アドバンテスト | 試験装置、試験方法およびプログラム |
| JP7355773B2 (ja) | 2021-02-26 | 2023-10-03 | 株式会社アドバンテスト | 試験装置、試験方法およびプログラム |
| KR102637850B1 (ko) * | 2021-11-18 | 2024-02-19 | 와이아이케이 주식회사 | 반도체 디바이스 테스트 장치 및 그것의 리던던시 분석 방법 |
| TWI809730B (zh) * | 2021-12-09 | 2023-07-21 | 南亞科技股份有限公司 | 待測元件的多重測試裝置及其測試方法 |
| US12181515B2 (en) | 2021-12-09 | 2024-12-31 | Nanya Technology Corporation | Apparatus for performing multiple tests on a device under test |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200616060A (en) * | 2004-08-02 | 2006-05-16 | Matsushita Electric Industrial Co Ltd | Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks |
| TW200703409A (en) * | 2005-03-03 | 2007-01-16 | Ebara Corp | Mapping projection type electron beam apparatus and defects inspection system using such apparatus |
| US20090040512A1 (en) * | 2004-04-13 | 2009-02-12 | Komatsu Electronic Metals Co., Ltd. | Semiconductor wafer inspection device and method |
| TW200921126A (en) * | 2007-06-29 | 2009-05-16 | Nec Electronics Corp | Method and device for inspection and failure analysis |
| US20150024520A1 (en) * | 2012-04-27 | 2015-01-22 | Fuji Electric Co., Ltd. | Semiconductor device manufacturing method and manufacturing device |
| TW201705325A (zh) * | 2015-07-31 | 2017-02-01 | 台灣積體電路製造股份有限公司 | 檢測基材中之缺陷之存在與位置的方法 與晶圓 |
| US20170200658A1 (en) * | 2016-01-08 | 2017-07-13 | Samsung Electronics Co., Ltd. | Methods of inspecting substrates and semiconductor fabrication methods incorporating the same |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970505B2 (ja) * | 1995-11-21 | 1999-11-02 | 日本電気株式会社 | 半導体デバイスの配線電流観測方法、検査方法および装置 |
| JP3875383B2 (ja) | 1997-12-02 | 2007-01-31 | 株式会社トプコン | 表面検査装置 |
| US6104481A (en) * | 1997-11-11 | 2000-08-15 | Kabushiki Kaisha Topcon | Surface inspection apparatus |
| JP3698904B2 (ja) * | 1999-01-11 | 2005-09-21 | 沖電気工業株式会社 | 半導体評価方法及び欠陥位置特定装置 |
| CN1685220B (zh) * | 2002-09-30 | 2010-04-28 | 应用材料以色列股份有限公司 | 暗场检测系统 |
| JP2004327858A (ja) * | 2003-04-25 | 2004-11-18 | Toshiba Corp | 半導体装置の検査方法および検査装置 |
| JP2007127499A (ja) * | 2005-11-02 | 2007-05-24 | Nec Electronics Corp | 非破壊検査装置および非破壊検査方法 |
| JP2009300202A (ja) * | 2008-06-12 | 2009-12-24 | Toshiba Corp | 半導体装置の検査方法及び半導体装置の検査装置 |
| JP2010103320A (ja) * | 2008-10-23 | 2010-05-06 | Topcon Corp | 半導体検査装置 |
| JP2012222263A (ja) * | 2011-04-13 | 2012-11-12 | Renesas Electronics Corp | 半導体装置の不良解析方法、チップ状半導体装置の不良解析方法及び半導体装置の動的不良解析装置 |
| JP5894745B2 (ja) * | 2011-05-31 | 2016-03-30 | 浜松ホトニクス株式会社 | 集積回路検査装置 |
| JP2015032686A (ja) * | 2013-08-02 | 2015-02-16 | 信越半導体株式会社 | 半導体素子の評価方法及び半導体素子の評価装置 |
| JP5996687B2 (ja) * | 2015-02-10 | 2016-09-21 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
-
2018
- 2018-09-26 JP JP2018180647A patent/JP7158224B2/ja active Active
-
2019
- 2019-06-25 US US17/278,683 patent/US11971364B2/en active Active
- 2019-06-25 KR KR1020217001671A patent/KR102698426B1/ko active Active
- 2019-06-25 EP EP19866090.4A patent/EP3859360A4/en active Pending
- 2019-06-25 WO PCT/JP2019/025249 patent/WO2020066177A1/ja not_active Ceased
- 2019-06-25 CN CN201980063019.1A patent/CN112752980B/zh active Active
- 2019-07-16 TW TW108125021A patent/TWI799617B/zh not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090040512A1 (en) * | 2004-04-13 | 2009-02-12 | Komatsu Electronic Metals Co., Ltd. | Semiconductor wafer inspection device and method |
| TW200616060A (en) * | 2004-08-02 | 2006-05-16 | Matsushita Electric Industrial Co Ltd | Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks |
| TW200703409A (en) * | 2005-03-03 | 2007-01-16 | Ebara Corp | Mapping projection type electron beam apparatus and defects inspection system using such apparatus |
| TW200921126A (en) * | 2007-06-29 | 2009-05-16 | Nec Electronics Corp | Method and device for inspection and failure analysis |
| US20150024520A1 (en) * | 2012-04-27 | 2015-01-22 | Fuji Electric Co., Ltd. | Semiconductor device manufacturing method and manufacturing device |
| TW201705325A (zh) * | 2015-07-31 | 2017-02-01 | 台灣積體電路製造股份有限公司 | 檢測基材中之缺陷之存在與位置的方法 與晶圓 |
| US20170200658A1 (en) * | 2016-01-08 | 2017-07-13 | Samsung Electronics Co., Ltd. | Methods of inspecting substrates and semiconductor fabrication methods incorporating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020066177A1 (ja) | 2020-04-02 |
| TW202029369A (zh) | 2020-08-01 |
| EP3859360A4 (en) | 2022-06-15 |
| JP7158224B2 (ja) | 2022-10-21 |
| JP2020051858A (ja) | 2020-04-02 |
| US11971364B2 (en) | 2024-04-30 |
| CN112752980B (zh) | 2024-12-03 |
| EP3859360A1 (en) | 2021-08-04 |
| KR20210062623A (ko) | 2021-05-31 |
| US20210270752A1 (en) | 2021-09-02 |
| KR102698426B1 (ko) | 2024-08-26 |
| CN112752980A (zh) | 2021-05-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |