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TWI799541B - 形成於金屬層下方之薄膜電阻器(tfr)及製造方法 - Google Patents

形成於金屬層下方之薄膜電阻器(tfr)及製造方法 Download PDF

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Publication number
TWI799541B
TWI799541B TW108109161A TW108109161A TWI799541B TW I799541 B TWI799541 B TW I799541B TW 108109161 A TW108109161 A TW 108109161A TW 108109161 A TW108109161 A TW 108109161A TW I799541 B TWI799541 B TW I799541B
Authority
TW
Taiwan
Prior art keywords
tfr
fabrication
thin
metal layer
formed under
Prior art date
Application number
TW108109161A
Other languages
English (en)
Other versions
TW201947664A (zh
Inventor
耀儉 冷
波尼 哈姆林
安卓 泰勒
珍妮特 凡德里
賈斯丁 薩托
Original Assignee
美商微晶片科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商微晶片科技公司 filed Critical 美商微晶片科技公司
Publication of TW201947664A publication Critical patent/TW201947664A/zh
Application granted granted Critical
Publication of TWI799541B publication Critical patent/TWI799541B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H10P14/44—
    • H10P50/283—
TW108109161A 2018-05-14 2019-03-18 形成於金屬層下方之薄膜電阻器(tfr)及製造方法 TWI799541B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862670880P 2018-05-14 2018-05-14
US62/670,880 2018-05-14
US16/034,394 2018-07-13
US16/034,394 US10818748B2 (en) 2018-05-14 2018-07-13 Thin-film resistor (TFR) formed under a metal layer and method of fabrication

Publications (2)

Publication Number Publication Date
TW201947664A TW201947664A (zh) 2019-12-16
TWI799541B true TWI799541B (zh) 2023-04-21

Family

ID=68463354

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108109161A TWI799541B (zh) 2018-05-14 2019-03-18 形成於金屬層下方之薄膜電阻器(tfr)及製造方法

Country Status (5)

Country Link
US (1) US10818748B2 (zh)
CN (1) CN112119511B (zh)
DE (1) DE112019002455T5 (zh)
TW (1) TWI799541B (zh)
WO (1) WO2019221915A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7267786B2 (ja) * 2019-03-13 2023-05-02 エイブリック株式会社 半導体装置の製造方法
KR102766491B1 (ko) 2020-08-27 2025-02-14 삼성전자주식회사 반도체 소자
US11626474B2 (en) 2020-12-31 2023-04-11 Microchip Technology Incorporated Thin-film resistor (TFR) with improved contacts
DE112021006719T5 (de) 2020-12-31 2023-11-02 Microchip Technology Incorporated Dünnschichtwiderstand (tfr) mit verbesserten kontakten
WO2023287457A1 (en) * 2021-07-15 2023-01-19 Microchip Technology Incorporated Thin-film resistor (tfr) module
US11670439B2 (en) 2021-07-15 2023-06-06 Microchip Technology Incorporated Thin-film resistor (TFR) module
US20230154915A1 (en) * 2021-11-12 2023-05-18 Texas Instruments Incorporated Dual resistor integration
US12396185B2 (en) 2022-05-04 2025-08-19 Microchip Technology Incorporated Thin-film resistor (TFR) module including a TFR element formed in a metal cup structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW389993B (en) * 1998-11-18 2000-05-11 United Microelectronics Corp Method for producing thin film resistance of dual damascene interconnect
US20150008560A1 (en) * 2011-05-06 2015-01-08 Texas Instruments Deutschland Gmbh Semiconductor device and method for low resistive thin film resistor interconnect
US20160197135A1 (en) * 2012-12-28 2016-07-07 Texas Instruments Incorporated Single photomask high precision thin film resistor
TW201711156A (zh) * 2015-06-18 2017-03-16 微晶片科技公司 具有一增加之遮罩層的鑲嵌薄膜電阻器

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US5447763A (en) * 1990-08-17 1995-09-05 Ion Systems, Inc. Silicon ion emitter electrodes
US5593602A (en) * 1993-03-29 1997-01-14 Pilkington Plc Metal substrate for a magnetic disc and manufacture thereof
US5593601A (en) * 1995-06-01 1997-01-14 Industrial Technology Research Institute Etching recipe for the CrSi film
US6534374B2 (en) * 2001-06-07 2003-03-18 Institute Of Microelectronics Single damascene method for RF IC passive component integration in copper interconnect process
US7012499B2 (en) * 2003-06-02 2006-03-14 International Business Machines Corporation Method of fabrication of thin film resistor with 0 TCR
JP4345626B2 (ja) 2004-09-27 2009-10-14 豊田合成株式会社 半導体素子及びその製造方法。
US7669313B2 (en) * 2005-07-11 2010-03-02 Texas Instruments Incorporated Method for fabricating a thin film resistor semiconductor structure
US7485540B2 (en) * 2005-08-18 2009-02-03 International Business Machines Corporation Integrated BEOL thin film resistor
JP5560595B2 (ja) * 2009-06-18 2014-07-30 富士電機株式会社 半導体装置の製造方法
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
US8680618B2 (en) * 2011-10-17 2014-03-25 Texas Instruments Incorporated Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
KR20130076979A (ko) * 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자 및 이의 제조방법
CN104051614A (zh) 2013-03-15 2014-09-17 联华电子股份有限公司 埋入式电阻
TWI653367B (zh) * 2013-06-11 2019-03-11 美商應用材料股份有限公司 具有高薄片電阻之工件上的電化學沉積

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW389993B (en) * 1998-11-18 2000-05-11 United Microelectronics Corp Method for producing thin film resistance of dual damascene interconnect
US20150008560A1 (en) * 2011-05-06 2015-01-08 Texas Instruments Deutschland Gmbh Semiconductor device and method for low resistive thin film resistor interconnect
US20160197135A1 (en) * 2012-12-28 2016-07-07 Texas Instruments Incorporated Single photomask high precision thin film resistor
TW201711156A (zh) * 2015-06-18 2017-03-16 微晶片科技公司 具有一增加之遮罩層的鑲嵌薄膜電阻器

Also Published As

Publication number Publication date
WO2019221915A1 (en) 2019-11-21
US20190348494A1 (en) 2019-11-14
TW201947664A (zh) 2019-12-16
DE112019002455T5 (de) 2021-01-28
CN112119511B (zh) 2024-06-21
US10818748B2 (en) 2020-10-27
CN112119511A (zh) 2020-12-22

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