TWI798767B - Photoelectric conversion element and manufacturing method thereof - Google Patents

Abstract

The invention provides a photoelectric conversion element and manufacturing method thereof. The photoelectric conversion element includes: a first circuit board, a filling layer, and a plurality of transistors. The first circuit board includes: a first light-transmitting substrate, a plurality of first photoelectric conversion units and a first common transparent electrode. The first photoelectric conversion unit and the first common transparent electrode are formed on two opposite surfaces of the first transparent substrate. The filling layer is formed on the first transparent substrate for covering the first photoelectric conversion unit, and the transistors are formed on the surface of the filling layer.

Description

Photoelectric conversion element and manufacturing method thereof

The invention relates to a photoelectric conversion module, in particular to a photoelectric conversion element with an optical image display function.

Night vision, most commonly used in military operations or surveillance purposes. In the prior art, night vision devices can be divided into low-light night vision devices and infrared night vision devices according to imaging technology.

As far as infrared night vision devices are concerned, they can be subdivided into passive night vision mode and active night vision mode. In the infrared night vision mode, it will actively emit infrared light to the target object to be observed, and then convert the infrared light reflected back by the target object into visible light. As for the low-light night vision device, the weak light is mainly enhanced by an image intensifier, so that the user can clearly observe the image.

However, the manufacturing process of the display module in the existing night vision device is relatively complicated, and the relative volume is relatively large. Therefore, how to provide a light and thin photoelectric conversion element so that it can be more easily applied to an optical image display device with night vision function is the technical problem to be solved by the present invention.

The main purpose of the present invention is to provide a photoelectric conversion element which is light and thin and can be applied to an optical image display device with night vision function.

In order to achieve the aforementioned purpose, the present invention provides a method for manufacturing a photoelectric conversion element, comprising the following steps: (a). A first circuit board is provided. The first circuit board includes a first light-transmitting substrate, a plurality of first photoelectric conversion units, and a first common transparent electrode. The first light-transmitting substrate has opposite first and second surfaces , the first photoelectric conversion unit is formed on the first surface, each first photoelectric conversion unit includes a first photoelectric material layer and a first electrode formed on the first photoelectric material layer, and the first common transparent electrode is formed on the second surface superior; (b). Forming a filling layer covering the first photoelectric conversion unit on the first surface; (c). Forming a plurality of transistors on the surface of the filling layer; (d). Forming a plurality of through holes in the filling layer, each through hole is located at one side of each transistor, and each first electrode is partially exposed in each through hole; and (e). Conductive lines are formed in each through hole, and the conductive lines are used to electrically connect the first electrode and each transistor to form a photoelectric conversion element.

In the above-mentioned preferred embodiment, wherein step (b) includes: (b1). Forming a layer of filling material on the first surface by deposition; and (b2). Planarize the surface of the filling material layer to form the filling layer.

In the above preferred implementation manner, in the step (b1), the material of the filling material layer is silicon, germanium or gallium arsenide.

In the above-mentioned preferred embodiment, wherein step (b) includes: (b1). Forming a first filling material layer on the first surface by deposition; (b2). Forming a second filling material layer on the surface of the first filling material layer by deposition; and (b3). Planarizing the surface of the second filling material layer to form a filling layer.

In the preferred embodiment above, in step (b1), the material of the first filling material layer is: indium phosphide, gallium nitride, silicon carbide, aluminum oxide, gallium phosphide, indium gallium phosphide or phosphide Aluminum Gallium Indium.

In the above preferred implementation manner, in the step (b2), the material of the second filling material layer is silicon, germanium or gallium arsenide.

In the above-mentioned preferred embodiment, wherein in step (a). The photoelectric conversion unit is a light emitting unit or a light absorbing unit.

The present invention further provides a photoelectric conversion element, comprising: A first circuit board comprising: The first light-transmitting substrate has opposite first and second surfaces; A plurality of first photoelectric conversion units formed on the first surface, each first photoelectric conversion unit comprising a first photoelectric material layer and a first electrode formed on the first photoelectric material layer; and a first common transparent electrode formed on the second surface; a filling layer formed on the first surface and covering the first photoelectric conversion unit; and a plurality of transistors formed on the surface of the filling layer; Wherein, the filling layer has a plurality of through holes, each through hole is located on one side of each transistor, and each first electrode is partially exposed in each through hole, each through hole has a conductive circuit, and the conductive circuit is used for Electrically connected to the first electrode and each transistor.

In the above preferred implementation manner, the filling layer is made of silicon, germanium or gallium arsenide.

In the above preferred embodiment, wherein the filling layer includes a first filling material layer and a second filling material layer, the first filling material layer is formed on the first surface, and the second filling material layer is formed on the first filling material layer superior.

In the above preferred implementation manner, the material of the first filling material layer is: indium phosphide, gallium nitride, silicon carbide, aluminum oxide, gallium phosphide, indium gallium phosphide or aluminum gallium indium phosphide.

In the above preferred implementation manner, the material of the second filling material layer is silicon, germanium or gallium arsenide.

In the above preferred implementation manner, it further includes a plurality of second photoelectric conversion units.

In the above preferred implementation manner, each second photoelectric conversion unit is formed on each transistor and is electrically connected to each transistor.

In the above-mentioned preferred implementation manner, the second photoelectric conversion units are formed on the filling layer, and are respectively electrically connected to the transistors.

In the above preferred implementation manner, the first photoelectric conversion unit is a light absorption unit, and the second photoelectric conversion unit is a light emission unit.

In the above preferred embodiment, the first photoelectric conversion unit is a light emitting unit, and the second photoelectric conversion unit is a light absorption unit.

In the preferred embodiment above, it further includes a second photoelectric conversion element, the second photoelectric conversion element includes a second light-transmitting substrate, a plurality of second photoelectric conversion units, and a second common transparent electrode, and the second light-transmitting substrate has opposite The third surface and the fourth surface of the second photoelectric conversion unit are formed on the third surface, and each second photoelectric conversion unit includes a second photoelectric material layer and a second electrode formed on the second photoelectric material layer. Two common transparent electrodes are formed on the fourth surface, wherein the second photoelectric conversion unit is respectively electrically connected to the transistor through the second electrode.

In the above preferred implementation manner, the first photoelectric conversion unit is a light absorption unit, and the second photoelectric conversion unit is a light emission unit.

In the above preferred embodiment, the first photoelectric conversion unit is a light emitting unit, and the second photoelectric conversion unit is a light absorption unit.

The beneficial effect of the present invention is that, through the improvement of the manufacturing process, the volume of the photoelectric conversion element is lighter and thinner, and it is easier to be widely used in various optical image display devices with night vision functions.

The advantages and features of the present invention and methods for attaining the same will be more easily understood by more detailed description with reference to exemplary embodiments and accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. On the contrary, for those skilled in the art, these embodiments are provided to make this disclosure more thorough, complete and fully convey the scope of the present invention.

The optical amplifying module provided by the present invention is mainly produced by photoelectric semiconductor-related processes, and the related processes are known to those skilled in the art, and the details of the processes will not be repeated here.

Please refer to FIG. 1 , FIG. 2A and FIG. 2B . Fig. 1 is the flowchart of the photoelectric conversion element manufacturing method provided by the present invention; Fig. 2A is the detailed decomposition flowchart of the first embodiment of step S102 in Fig. 1; Fig. 2B is the photoelectric conversion element manufacturing method provided by the present invention A schematic flow chart of the first embodiment.

Firstly, a first circuit board 10 is provided. The first circuit board 10 includes a first light-transmitting substrate 11, a plurality of first photoelectric conversion units 12 and a first common transparent electrode 13. The first light-transmitting substrate 11 has an opposite first surface. 111 and the second surface 112, the first photoelectric conversion unit 12 is formed on the first surface 111, and each first photoelectric conversion unit 12 includes a first photoelectric material layer 121 and a first electrode 122 formed on the first photoelectric material layer 121 , the first common transparent electrode 13 is formed on the second surface 112 (step S101; as shown in (i) of FIG. 2B ). The first photoelectric conversion unit 11 can be a light-absorbing unit or a light-emitting unit. If the first photoelectric conversion unit 12 is a light-absorbing unit, the first photoelectric material layer 111 is a light-absorbing material, such as silicon (Si), gallium arsenide, germanium (Ge), lead sulfide (PbS) or gallium indium arsenide (InGaAs); if the first photoelectric conversion unit 12 is a light-emitting unit, the first photoelectric material layer 111 is a light-emitting material, for example: silicon carbide (SiC), oxide aluminum (Al2O3), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), gallium nitride (GaN), or aluminum gallium indium phosphide (AlGaInP); on the other hand, the first electrode 122 The material can be: bismuth, tin, lead, cadmium, nickel, aluminum, silver, gold, metal oxide or organic conductive material.

The first common light-transmitting electrode 13 is a layered structure, and its material can be: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), zinc oxide (ZnO) or tin oxide ( SnO2).

Next, a filling layer 20 covering the first photoelectric conversion unit 12 is formed on the first surface 111 (step S102 ). In this embodiment, the filling material layer 21 is formed on the first surface 111 by deposition (step S1021 ; as shown in (ii) of FIG. 2B ). The filling material layer 21 is a material suitable for crystal growth, such as silicon (Si), germanium (Ge) or gallium arsenide (GaAs). On the other hand, after the filling material layer 21 is deposited and formed, the filling material layer 21 forms a protruding structure 211 corresponding to the first photoelectric conversion unit 12 on the surface. Next, the surface of the filling material layer 21 is planarized to form the filling layer 20 (step S1022 ; as shown in (iii) of FIG. 2B ). As in the present embodiment, the surface of the filling material layer 21 may be planarized by grinding, tempering, polishing or etching, so as to remove the protruding structure 211 .

Next, a plurality of transistors 30 are formed on the surface of the filling layer 20 (step S103 ; as shown in (iv) of FIG. 2B ). The transistor 30 is composed of a logic gate, an amplifier circuit (not shown in the figure) or a combination thereof, and the transistor 30 is electrically coupled to a power supply circuit (not shown in the figure) in the filling layer 20 . Next, a plurality of through holes 201 are formed in the filling layer 20, each through hole 201 is located on one side of each transistor 30, and each first electrode 122 is partially exposed in each through hole 201 (step S104; (v) of Figure 2B). In step S104 , the through holes 201 can be formed by mechanical drilling, laser drilling, etching and the like. Finally, a conductive circuit 40 is formed in each through hole, and the conductive circuit 40 is used to electrically connect the first electrode 122 and each transistor 30 to form a photoelectric conversion element 1 (step S105; as shown in (vi) of FIG. 2B ) . Wherein, the conductive circuit 40 is formed in the through hole 201 by deposition.

Please refer to FIG. 1 , FIG. 3A and FIG. 3B . FIG. 3A is a detailed exploded flow chart of the second embodiment of step S102 in FIG. 1; FIG. 3B is a schematic flow chart of the second embodiment of the photoelectric conversion element manufacturing method provided by the present invention. In this embodiment, steps S101 , S103 , S104 and S105 are the same as those in the first embodiment, and will not be repeated here. However, the difference is that step S102 further includes: forming a first filling material layer 22 on the first surface 111 by deposition (step S1021'; as shown in (ii) of FIG. 3B ). The first filling material layer 22 will form a plurality of raised structures 221, and its material is: indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), aluminum oxide (Al2O3), phosphide Gallium (GaP), indium gallium phosphide (InGaP) or aluminum gallium indium phosphide (AlGaInP) are materials suitable for light shielding. The first filling material layer 22 is not only used for shielding light and filling gaps, but also has a lattice size and temperature expansion characteristics similar to those of the photoelectric element. Next, the second filling material layer 23 is formed on the surface of the first filling material layer 22 by deposition (step S1022'; as shown in (iii) of FIG. 3B ). The second filling material layer 23 is formed on the surface of the first filling material layer 22 having the protruding structure 221 , and its material can be silicon, germanium or gallium arsenide and other materials suitable for crystal growth. Finally, the surface of the second filling material layer 23 is planarized to form the filling layer 20 (step S1023'; as shown in (iv) of FIG. 3B ). In this embodiment, it can be ground, heated and tempered, polished or etched A method is used to planarize the second filling material layer 23, thereby removing the protrusion structure 231.

Please refer to Figure 4, Figure 5 and Figure 6. Fig. 4, Fig. 5 and Fig. 6 are optical amplification modules made of photoelectric conversion elements provided by the present invention. In FIG. 4 and FIG. 5, the second photoelectric conversion unit 50 can be formed on each transistor 30, and the second photoelectric conversion unit 50 can be electrically connected to the transistor 30 through the conductive circuit 60, to; or , the second photoelectric conversion unit 50 can be formed on the filling layer 20, and the second photoelectric conversion unit 50 can be electrically connected to the transistor 30 through the conductive line 60 to form an optical amplification module; on the other hand, the first The common transparent electrode 13 is connected to a drive circuit (not shown in the figure) including the circuit of the transistor 30 , and can be controlled by an external power supply and a signal from the transistor 30 . The light amplification module can be installed in an optical image display device, such as a night vision device.

In this embodiment, if the first photoelectric conversion unit 12 is used as a light absorbing unit; the second photoelectric conversion unit 50 is used as a light emitting unit. When weak ambient light enters from one side of the first circuit board 10 , the first photoelectric conversion unit 12 converts the received light into electric current, and transmits it to the transistor 30 through the conductive circuit 40 . After the transistor 30 receives the current signal, the power supplied by the power supply line in the filling layer 20 can drive the various functional elements built in the transistor 30, such as logic gates or amplifier circuits, and use the cooperation of each functional element to amplify current. Finally, the amplified current is transmitted to the second photoelectric conversion unit 50 through the conductive circuit 60 , so that the second photoelectric conversion unit 50 emits stronger image light to display images in the environment. At this time, the filling layer 20 can block the image light of the second photoelectric conversion unit 50 to prevent mutual interference between the image light and ambient light, so that the first photoelectric conversion unit 12 will not generate wrong photoelectric signals.

If the first photoelectric conversion unit 12 is used as a light emitting unit; the second photoelectric conversion unit 50 is used as a light absorption unit. When weak ambient light enters from one side of the second photoelectric conversion unit 50 , the second photoelectric conversion unit 50 converts the received light into electric current and transmits it to the transistor 30 through the conductive circuit 60 . After the transistor 30 receives the current signal, the power supplied by the power supply line in the filling layer 20 can drive the various functional elements built in the transistor 30, such as logic gates or amplifier circuits, and use the cooperation of each functional element to amplify current. Finally, the amplified current is transmitted to the first photoelectric conversion unit 12 through the conductive circuit 40 , so that the first photoelectric conversion unit 12 emits stronger image light. At this time, the filling layer 20 can block the image light generated by the first photoelectric conversion unit 12 , and not only prevent the image light from interfering with the second photoelectric conversion unit 50 to detect ambient light, but also improve the directivity of the image light.

See Figure 6. In FIG. 6 , a second photoelectric conversion element 70 may be provided to combine with the photoelectric conversion element 1 . The second photoelectric conversion element 70 includes: a second transparent substrate 71 , a second photoelectric conversion unit 72 and a second common transparent electrode 73 . The second transparent substrate 71 has a third surface 711 and a fourth surface 712 opposite to each other. The second photoelectric conversion unit 72 is formed on the third surface 711, and each second photoelectric conversion unit 72 includes a second photoelectric material layer 721 and a second electrode 722 formed on the second photoelectric material layer 721; Two common transparent electrodes 73 are formed on the fourth surface 721 , and the second common transparent electrodes 73 are also connected to the driving circuit (not shown in the figure) including the circuit of the transistor 30 . On the other hand, the second photoelectric conversion unit 72 is electrically coupled to the transistor 30 through the second electrode 722 and the conductive circuit 60 . The operation mode of the second photoelectric conversion element 70 is similar to that of the second photoelectric conversion unit 50 in FIG. 4 and FIG. 5 , and also amplifies the current through the transistor 30 , which will not be repeated here.

Compared with the conventional technology, the photoelectric conversion element in the present invention is thinner and thinner through the improvement of the manufacturing process, and it is easier to be widely used in various optical image display devices with night vision functions; therefore, the present invention It is indeed a creation with great industrial value.

The present invention can be modified in various ways by those who are familiar with the art, but all of them will not break away from the intended protection of the appended patent scope.

S101~S105 Steps S1021~S1022 Steps S1021’~S1023’ Steps 1 Photoelectric conversion element 10 The first circuit board 11 The first transparent substrate 111 First surface 112 Second surface 12 The first photoelectric conversion unit 121 The first photoelectric material layer 122 The first electrode 13 The first common transparent electrode 20 Filling layer 201 Through hole 21 Filling material layer 22 The first filling material layer 23 The second filling material layer 211, 221, 231 Raised structures 30 Transistor 40, 60 Conductive lines 50, 72 The second photoelectric conversion unit 70 Second photoelectric conversion element 71 Second light-transmitting substrate 711 The third surface 712 The fourth surface 721 The second photoelectric material layer 722 Second electrode 73 The second common transparent electrode

Fig. 1: is the flow chart of the photoelectric conversion element manufacturing method provided by the present invention;

Fig. 2A: is the detailed decomposition flowchart of the first embodiment of step S102 in Fig. 1;

FIG. 2B: is a schematic flow diagram of the first embodiment of the method for producing a photoelectric conversion element provided by the present invention;

FIG. 3A: is a detailed decomposition flowchart of the second embodiment of step S102 in FIG. 1;

Fig. 3B: is a schematic flow diagram of the second embodiment of the method for producing a photoelectric conversion element provided by the present invention; and

Fig. 4, Fig. 5 and Fig. 6: are the optical amplification modules made of the photoelectric conversion element provided by the present invention.

S101~S105 Steps

Claims (19)

A method for manufacturing a photoelectric conversion element, comprising the following steps: (a). Provide a first circuit board, the first circuit board includes a first light-transmitting substrate, a plurality of first photoelectric conversion units and a first common transparent electrode, the first light-transmitting substrate has an opposite first A surface and a second surface, the first photoelectric conversion units are formed on the first surface, each of the first photoelectric conversion units includes a first photoelectric material layer and a first photoelectric material layer formed on the first photoelectric material layer an electrode, the first common transparent electrode is formed on the second surface; (b). forming a filling layer covering the first photoelectric conversion units on the first surface; (c). Forming a plurality of transistors on the surface of the filling layer; (d). Forming a plurality of through holes in the filling layer, each of the through holes is located at one side of each of the transistors, and each of the first electrodes is partially exposed in each of the through holes; and (e). A conductive line is formed in each of the through holes, and the conductive line is used to electrically connect the first electrode and each of the transistors to form a photoelectric conversion element. The method for making a photoelectric conversion element as described in item 1 of the scope of the patent application, wherein the step (b) includes: (b1). forming a layer of filling material on the first surface by deposition; and (b2). Planarizing the surface of the filling material layer to form the filling layer. The method for manufacturing a photoelectric conversion element as described in item 2 of the scope of the patent application, wherein in the step (b1), the material of the filling material layer is silicon, germanium or gallium arsenide. The method for making a photoelectric conversion element as described in item 1 of the scope of the patent application, wherein the step (b) includes: (b1). Forming a first filling material layer on the first surface by deposition; (b2). Forming a second filling material layer on the surface of the first filling material layer by deposition; and (b3). Planarizing the surface of the second filling material layer to form the filling layer. The method for manufacturing a photoelectric conversion element as described in item 4 of the scope of the patent application, wherein in the step (b1), the material of the first filling material layer is: indium phosphide, gallium nitride, silicon carbide, aluminum oxide, Gallium phosphide, indium gallium phosphide, or aluminum gallium indium phosphide. The method for manufacturing a photoelectric conversion element as described in item 4 of the scope of the patent application, wherein in the step (b2), the material of the second filling material layer is silicon, germanium or gallium arsenide. The method for manufacturing a photoelectric conversion element as described in item 1 of the scope of the patent application, wherein in the step (a). These photoelectric conversion units are light-emitting units or light-absorbing units. A photoelectric conversion element, comprising: a first circuit board, including: a first light-transmitting substrate having a first surface opposite to a second surface; a plurality of first photoelectric conversion units formed on the first surface, Each of the first photoelectric conversion units includes a first photoelectric material layer and a first electrode formed on the first photoelectric material layer; and a first common transparent electrode formed on the second surface; a filling layer formed On the first surface and covering the first photoelectric conversion units, the material of the filling layer is silicon, germanium or gallium arsenide; and a plurality of transistors are formed on the surface of the filling layer; wherein, the filling layer has a plurality of each of the through openings is located on one side of each of the transistors, and each of the first electrodes is partially exposed in each of the through openings, each of the through openings has a conductive circuit, and the conductive circuit is used for The first electrode is electrically connected with each of the transistors. The photoelectric conversion element as described in claim 8 of the patent application, wherein the filling layer includes a first filling material layer and a second filling material layer, the first filling material layer is formed on the first surface, and the first filling material layer is formed on the first surface. Two filling material layers are formed on the first filling material layer. The photoelectric conversion element as described in item 9 of the patent application, wherein the material of the first filling material layer is: indium phosphide, gallium nitride, silicon carbide, aluminum oxide, gallium phosphide, indium gallium phosphide or phosphide Aluminum Gallium Indium. The photoelectric conversion element as described in item 9 of the scope of the patent application, wherein the material of the second filling material layer is silicon, germanium or gallium arsenide. The photoelectric conversion element described in claim 8 of the patent application further includes a plurality of second photoelectric conversion units. The photoelectric conversion element as described in claim 12, wherein each of the second photoelectric conversion units is formed on each of the transistors and is electrically connected to each of the transistors. The photoelectric conversion element as described in claim 12, wherein the second photoelectric conversion units are formed on the filling layer and are respectively electrically connected to the transistors. The photoelectric conversion element as described in claim 12 of the patent application, wherein the first photoelectric conversion units are light-absorbing units, and the second photoelectric conversion units are light-emitting units. The photoelectric conversion element as described in claim 12 of the patent application, wherein the first photoelectric conversion units are light-emitting units, and the second photoelectric conversion units are light-absorbing units. The photoelectric conversion element as described in item 8 of the scope of the patent application, which further includes a second photoelectric conversion element, the second photoelectric conversion element includes a second light-transmitting substrate, a plurality of second photoelectric conversion units and a second common The transparent electrode, the second light-transmitting substrate has a third surface and a fourth surface opposite, the second photoelectric conversion units are formed on the third surface, each of the second photoelectric conversion units The conversion unit includes a second photoelectric material layer and a second electrode formed on the second photoelectric material layer, the second common transparent electrode is formed on the fourth surface, wherein the second photoelectric conversion units are formed by the The second electrodes are respectively electrically connected with the transistors. The photoelectric conversion element as described in claim 17 of the patent application, wherein the first photoelectric conversion units are light-absorbing units, and the second photoelectric conversion units are light-emitting units. The photoelectric conversion element as described in claim 17 of the patent application, wherein the first photoelectric conversion units are light-emitting units, and the second photoelectric conversion units are light-absorbing units.

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