TWI794579B - Sputtering target structure - Google Patents

Abstract

A sputtering target structure comprises a protecting element, a carrier plate and a target material plate. The carrier plate comprises a carrying surface. The target material plate is on the carrying surface, and comprises at least one sidewall target material surface. The target material plate has only the at least one sidewall target material surface having the protecting element disposed thereon.

Description

Sputtering target structure

The present invention relates to a sputtering target structure, and in particular to a sputtering target structure including a protection element and/or a magnetic element.

At present, sputtering technology (sputtering) is one of the methods used in the main deposition coating technology. The sputtering technology generally forms a plasma in the sputtering chamber of the sputtering machine, and the plasma (plasma) will carry out ion bombardment on the metal target plate, so that the metal atoms of the target plate are knocked out, and the The formation of gas molecules is emitted to the substrate to be deposited. After the gas molecules undergo sputtering such as attachment, adsorption, surface migration, and nucleation, a metal film with metal atoms is finally formed on the substrate. Sputtering technology is widely used in industrial production and scientific research. However, the distribution of the magnetic field generated by the sputtering machine in the target plate will affect the sputtering and etching conditions. Different positions of the target plate may have different erosion amounts due to different magnetic field strengths, resulting in uneven sputtering erosion depths of the target plate. Usually, when one position of the target plate is too thin, even if most of the other positions still have sufficient thickness, the new target plate must still be replaced, resulting in waste of the target plate (because most of the other positions still have sufficient thickness) .

The invention relates to a sputtering target structure.

According to a first aspect of the present invention, a sputtering target structure is provided, which includes a carrier plate, a target plate and a magnetic element. The carrier plate includes a bearing surface. The target plate is on the carrier surface and includes target notches. A magnetic element is disposed in the target recess.

According to the second aspect of the present invention, a sputtering target structure is provided, which includes a carrier plate, a target plate and a protection element. The carrier plate includes a bearing surface. The target plate is on the carrier surface and includes target notches. The protection element is arranged in the target notch.

According to a third aspect of the present invention, a sputtering target structure is provided, which includes a carrier plate, a target plate, and a magnetic element. The carrier plate includes a bearing surface. The target plate is on the carrier surface and includes a sidewall target surface. Magnetic elements are disposed on the surface of the sidewall target.

According to a fourth aspect of the present invention, a sputtering target structure is provided, which includes a protection element, a carrier plate, and a target plate. The carrier plate includes a bearing surface. The target plate is on the carrying surface and includes at least one sidewall target surface. The target plate only has a protective element arranged on the target surface of at least one side wall.

In order to have a better understanding of the above-mentioned and other aspects of the present invention, the following specific examples are given in detail with the accompanying drawings as follows:

102: carrier board

110: bearing surface

111: lower surface

204: Adhesive layer

306,4306: target plate

312,4312: Sidewall target surface

312A: first side wall target surface

312B: Second side wall target surface

314: Lower target surface

316L, 4316L: part of the lower side wall surface

316T: part of the upper side wall surface

4328: target notch

4330: Lower target surface

408: Protection element

408A: The first protection element

408B: Second protection element

420: side wall protection surface

432: lower protective surface

434: upper protective surface

518, 3518, 5518, 7518: Magnetic components

518A: first magnetic element

518B: second magnetic element

3524: Longitudinal extension magnetic part

3526, 7526, 5526: Transversely extended magnetic part

3526G: Lower Magnetic Surface

3526U: Upper Magnetic Surface

H, H1, H2, H3, H31, H32, H33: Height

L: size

L1, L2, L3: Length

W1: size

W, W2, W3: width

FIG. 1A shows a perspective view of the sputtering target structure of the first embodiment.

FIG. 1B shows a schematic cross-sectional view of the sputtering target structure of the first embodiment.

FIG. 2A shows a top view of the sputtering target structure of the first embodiment.

FIG. 2B shows a schematic cross-sectional view of the sputtering target structure of the second embodiment.

FIG. 3 shows a schematic cross-sectional view of the sputtering target structure of the third embodiment.

FIG. 4 shows a schematic cross-sectional view of the sputtering target structure of the fourth embodiment.

FIG. 5 shows a schematic cross-sectional view of the sputtering target structure of the fifth embodiment.

FIG. 6 shows a schematic cross-sectional view of the sputtering target structure of the sixth embodiment.

FIG. 7 shows a schematic cross-sectional view of the sputtering target structure of the seventh embodiment.

The sputtering target structure of the first embodiment is described with reference to Figure 1A and Figure 1B, wherein Figure 1A is a perspective view of the sputtering target structure, and Figure 1B is a schematic cross-sectional view drawn along the EF line shown in Figure 1A . The sputtering target structure includes a carrier plate 102 , an adhesive layer 204 , a target plate 306 and a protection element 408 . The carrier board 102 includes a carrier surface 110 . The carrier board 102 can be a backplane. The target plate 306 and the protection element 408 are disposed on the carrier surface 110 and can be fixed on the carrier plate 102 by the adhesive layer 204 . In one embodiment, the adhesive layer 204 includes metal adhesive or soft solder. In one embodiment, the material of the adhesive layer 204 includes, for example, tin, zinc, indium or a combination thereof. But the present disclosure is not limited thereto. In other embodiments, the protection element 408 can be fixed to the carrier 102 by using a fixing member or a bonding member (not shown), so as to assemble and complete the sputtering target structure. Fasteners or joints may include, but are not limited to, screws, plugs, and the like.

In one embodiment, the target plate 306 and the protection element 408 can be simultaneously bonded on the carrier plate 102 through the adhesive layer 204 in the same process step, without adding additional manufacturing processes. Compared with the sputtering target structure (not shown) in which the protection element is disposed in the carrier 102 (the gap for the installation position needs to be dug out first), according to the embodiment of the present disclosure, the protection element 408 is disposed on the carrying surface 110 Sputtering target structure does not need to increase With an additional manufacturing process, the manufacturing method is simpler.

In this embodiment, the target plate 306 has the protective element 408 disposed thereon only on the sidewall target surface 312 . In other words, the protective element 408 is only located on the sidewall target surface 312 of the target plate 306, but not on other surfaces of the target plate 306, for example, the protective element 408 is not arranged on the lower target of the target plate 306. on the surface 314 of the material.

For example, the protection element 408 includes a first protection element 408A and a second protection element 408B separated from each other by the target plate 306 . The sidewall target surface 312 of the target plate 306 includes opposing first and second sidewall target surfaces 312A, 312B. The first sidewall target surface 312A and the second sidewall target surface 312B each include an upper sidewall surface portion 316T and a lower sidewall surface portion 316L that are aligned with each other. Of the upper sidewall surface portion 316T and the lower sidewall surface portion 316L of the first sidewall target surface 312A, only the lower sidewall surface portion 316L has the first protection element 408A disposed thereon, that is, the first protection element 408A is not disposed. on the upper sidewall surface portion 316T. Similarly, only the lower sidewall surface portion 316L of the second sidewall target surface 312B has the second protective element 408B disposed thereon.

In one embodiment, the target plate 306 has the first protection element 408A and the second protection element 408B disposed thereon only on the first sidewall target surface 312A and the second sidewall target surface 312B, respectively. However, the present disclosure is not limited thereto, and the sputtering target structure may have other numbers of protection elements 408 and/or the protection elements 408 may be disposed on other portions of the sidewall target surface 312 . The shape and/or size of the protection element 408 can be appropriately adjusted, for example, the thickness of the protection element 408 can be the same as the thickness of the target plate 306 To a certain degree, the upper protective surface of the protective element 408 may be aligned with the upper plate surface of the target plate 306 .

The protection element 408 can be disposed in a region where the carrier 102 may be impacted when the sputtering target structure is sputtering in the sputtering chamber, so as to prevent the carrier 102 from being damaged or dented by the impact. The protection element 408 can prevent the carrier plate 102 disposed thereunder from being damaged by the sputtering impact during the sputtering process.

In the present invention, the sputtering target structure can be disassembled. The disassembly method includes removing the target plate 306 from the carrier plate 102 . The protection element 408 can also be removed from the carrier board 102 . In the embodiment, after the protection element 408 is impacted and damaged by the sputtering process, only the protection element 408 can be replaced directly without rework on the carrier 102, such as smoothing the depression with sandpaper and filling it, and there is no need to replace it Therefore, the manufacturing cost of the entire carrier 102 can be reduced, and the method for replacing the protection element 408 is simple and fast, which can improve the process efficiency.

Compared with the sputtering target structure (not shown) in which the protection element is disposed in the carrier 102 (the gap for the installation position needs to be dug out first), according to the embodiment of the present disclosure, the protection element 408 is disposed on the carrying surface 110 The sputtering target structure does not require an additional manufacturing process, and the manufacturing method is simpler, which can improve process efficiency and reduce material loss.

The material of the target plate 306 may depend on the material of the film to be deposited on the substrate by sputtering, such as metal or oxide. Materials of the carrier plate 102 and the target plate 306 may be the same or different. In one embodiment, the carrier plate 102 is made of metals such as aluminum, titanium or copper, and the target plate 306 is made of metals such as aluminum, titanium or copper or indium tin oxide thing. The material of the protection element 408 can be the same as or different from the carrier 102 . For example, the material of the protection element 408 may include but not limited to metals such as copper, titanium, aluminum, or other suitable materials.

The size W1 of the protection element 408 (such as 90mm to 190mm, such as length) must be determined in accordance with the width of the carrier plate 102 and the target plate 306, so that it does not exceed the width W of the carrier plate 102 and is not less than the width W2 of the target plate 306. As a benchmark, if the width W2 of the target plate 306 is 90 mm, the size W1 of the protection element 408 is not less than 90 mm. In one embodiment, the width W2 of the target plate 306 is about 180 mm, and the width W of the carrier plate 102 is about 190 mm, so the size W1 of the protection element 408 is between 180 mm and 190 mm. Therefore, the size W1 of the protection element 408 occupies about 47% to 100% of the width W of the carrier 102 . In one embodiment, the dimension W1 of the protection element 408 is the same as the width W of the carrier 102 . The dimension L (eg width) of the protection element 408 is about 90-150 mm, the length L1 of the carrier plate 102 is about 3000 mm, and the length L2 of the target plate 306 is about 2650 mm. The dimension L of the protection element 408 accounts for about 3% to 5% of the length L1 of the carrier 102 . The length L3 of the part of the carrier 102 between the first protection element 408A and the second protection element 408B is about 90 mm to 3000 mm. The length L3 is about 3% to 100% of the length L1. The height (or thickness) H of the protection element 408 is about 0.1-4 mm, such as 0.1-2 mm, such as 2 mm. The height (or thickness) H1 of the carrier 102 is about 10-20 mm, such as 16 mm. In one embodiment, the height H of the protection element 408 is lower than the height (or thickness) H2 of the target plate 306 . The height H2 of the target plate 306 is about 20 mm. The height H of the protection element 408 accounts for the safety ratio of the height H2 of the target plate 306 to be less than 10%, so as to avoid the protection during the sputtering process. The element 408 collides with the fixture located above the target plate 306 .

The sputtering target structure of the second embodiment is described with reference to Fig. 2A and Fig. 2B, wherein Fig. 2A is a top view of the sputtering target structure, and Fig. 2B is a section drawn along the line IJ shown in Fig. 2A schematic diagram. Differences between the sputtering target structures of the first embodiment and the second embodiment are explained below. The sputtering target structure further includes a magnetic element 518 . The material of the magnetic element 518 can be selected from iron (Fe), cobalt (Co), nickel (Ni), stainless steel, permalloy, metal foil (foil) and any combination thereof, wherein the stainless steel is such as SUS430. The magnetic element 518 can be fixed on the carrier 102 by the adhesive layer 204 . Magnetic element 518 is disposed between sidewall target surface 312 of target plate 306 and sidewall protective surface 420 (inner sidewall protective surface) of protective element 408 .

In this embodiment, only the sidewall target surface 312 of the target plate 306 has the magnetic element 518 disposed thereon. In other words, the magnetic element 518 is only located on the sidewall target surface 312 of the target plate 306, but not on other surfaces of the target plate 306, for example, the magnetic element 518 is not arranged on the lower target of the target plate 306. on the surface 314 of the material. The magnetic element 518 has a longitudinally extending shape, or alternatively, the magnetic element 518 has a longitudinally extending magnetic portion.

For example, the magnetic element 518 includes a first magnetic element 518A and a second magnetic element 518B separated from each other by the target plate 306 . Of the upper sidewall surface portion 316T and the lower sidewall surface portion 316L of the first sidewall target surface 312A, only the lower sidewall surface portion 316L has the first magnetic element 518A disposed thereon, that is, the first magnetic element 518A is not disposed. on the upper sidewall surface portion 316T. Similarly, the second sidewall target surface 312B has only the lower sidewall surface portion 316L has a second magnetic element 518B disposed thereon.

In one embodiment, the target plate 306 has the first magnetic element 518A and the second magnetic element 518B disposed thereon only on the opposite first sidewall target surface 312A and the second sidewall target surface 312B, respectively. However, the present disclosure is not limited thereto, and the sputtering target structure may have other numbers of magnetic elements 518 and/or the magnetic elements 518 may be disposed on other portions of the sidewall target surface 312 . Shape and/or size of magnetic element 518

Depending on the desired magnetic field, it can be appropriately adjusted. For example, the thickness of the magnetic element 518 can be the same as the thickness of the target plate 306, the thickness of the magnetic element 518 can be the same or different from the thickness of the protective element 408, and the upper magnetic surface of the magnetic element 518 can be Aligned with the upper plate surface of the target plate 306 , the upper magnetic surface of the magnetic element 518 may or may not be aligned with the upper protective surface of the protective element 408 . The configuration of the magnetic element 518 can be determined according to the desired magnetic field distribution, so that the consumption rate of the target plate 306 at each position is more even, so as to increase the service life of the target plate 306 .

In the embodiment, after seeing the loss distribution of the target plate 306 through the sputtering process, the configuration of the magnetic element 518 is changed, thereby adjusting the magnetic field distribution of the process and the loss of the target plate 306 at different positions, for example, making the target plate 306 Thicker sections have a greater consumption rate and vice versa, thus increasing the useful life of the target plate 306 . The method for changing the configuration of the magnetic element 518 is simple and fast, which can improve the process efficiency.

In one embodiment, an adhesive layer (not shown) can also be optionally provided between the magnetic element 518 and the sidewall target surface 312 of the target plate 306 to be bonded to each other, or can be bonded in other suitable ways or components (not shown) will magnetic components 518 is secured to the sidewall target surface 312 of the target plate 306 .

In one embodiment, the target plate 306 and the magnetic element 518 can be bonded on the carrier plate 102 through the adhesive layer 204 in the same process step, without adding additional manufacturing processes. Compared with the sputtering target structure (not shown) with the magnetic element disposed in the carrier 102 (the space for the position needs to be dug out first), or disposed on the lower surface 111 of the carrier 102 (not shown), according to the implementation of the present disclosure For example, the sputtering target structure in which the magnetic element 518 is disposed on the carrying surface 110 does not require additional manufacturing processes, and the manufacturing method is simpler.

The height (or thickness) H3 of the magnetic element 518 is between 0.1 mm and 0.5 mm. The magnetic element 518 is, for example, metal foil, but it can also be a thicker magnetic plate. In one embodiment, the width W3 (eg, the maximum width) of the magnetic element 518 ranges from 20% to 100% of the width W2 of the target plate 306 .

FIG. 3 shows a schematic cross-sectional view of the sputtering target structure of the third embodiment, and the differences between it and the sputtering target structure of the second embodiment are described as follows. Magnetic element 3518 has an L shape. The magnetic element 3518 includes a vertically extending magnetic portion 3524 and a laterally extending magnetic portion 3526 adjacent to each other. The longitudinally extending magnetic portion 3524 is between the sidewall target surface 312 of the target plate 306 and the sidewall protective surface 420 of the protective element 408 . The laterally extending magnetic portion 3526 is disposed in a direction facing away from the protection element 408 , and the laterally extending magnetic portion 3526 is located between the carrying surface 110 of the carrier plate 102 and the lower target surface 314 of the target plate 306 . The upper magnetic surface 3526U of the laterally extending magnetic portion 3526 is adjacent to the target plate 4306 and the lower magnetic surface 3526G of the laterally extending magnetic portion 3526 is adjacent to the carrier plate 102 .

In one embodiment, the target plate 306, the protection element 408, and the magnetic element 3518/the laterally extending magnetic portion 3526 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing process. Compared with the sputtering target structure (not shown) with the magnetic element disposed in the carrier 102 (the space for the position needs to be dug out first), or disposed on the lower surface 111 of the carrier 102 (not shown), according to the implementation of the present disclosure For example, the sputtering target structure in which the magnetic element 3518 is disposed on the bearing surface 110 does not require additional manufacturing processes, and the manufacturing method is simpler.

In one embodiment, the surface of the laterally extending magnetic portion 3526 is completely covered by the adhesive layer 204 , such as but not limited to the upper magnetic surface 3526U and/or the lower magnetic surface 3526G of the laterally extending magnetic portion 3526 .

In one embodiment, an adhesive layer (not shown) may also be selectively provided between the magnetic element 3518, the protective element 408, and two adjacent surfaces of the surface of the target plate 306 to adhere to each other, or other methods can be used. Suitable engagement means or engagement elements (not shown) are secured to each other. The height (or thickness) H31 of the magnetic element 3518 is between 0.1 mm and 0.5 mm.

FIG. 4 shows a schematic cross-sectional view of the sputtering target structure of the fourth embodiment, and the differences between it and the sputtering target structure of the second embodiment are described as follows. The target plate 4306 includes a target notch 4328 at a lower edge portion of the target plate 4306 . Target recess 4328 is defined by lower target surface 4330 and lower sidewall surface portion 4316L of sidewall target surface 4312 . In this embodiment, the upper sidewall surface portion 316T and the lower sidewall surface portion 4316L of the sidewall target surface 4312 are offset from each other. The lower target surface 4330 of the target plate 4306 adjoins the upper sidewall surface portion 316T and the lower sidewall surface portion Divided between 4316L. The lower target surface 314 of the target plate 4306 is fixed on the carrier plate 102 by the adhesive layer 204 . The magnetic element 518 is disposed in the target notch 4328 together with the protective element 408 .

In one embodiment, the target plate 4306 , the protection element 408 and the magnetic element 518 can be simultaneously bonded on the carrier plate 102 through the adhesive layer 204 in the same process step without adding additional manufacturing processes.

In one embodiment, an adhesive layer (not shown) may optionally be provided between the magnetic element 518, the protection element 408, and the target plate 4306 to adhere to each other, or other suitable bonding methods or bonding elements ( not shown) are fixed to each other.

FIG. 5 shows a schematic cross-sectional view of the sputtering target structure of the fifth embodiment, and the differences between it and the sputtering target structure shown in FIG. 4 are explained as follows. Magnetic element 5518 has an L shape. The magnetic element 5518 includes a vertically extending magnetic portion 3524 and a laterally extending magnetic portion 5526 adjacent to each other. The longitudinally extending magnetic portion 3524 is between the sidewall protective surface 420 of the protective element 408 and the lower sidewall surface portion 4316L of the sidewall target surface 4312 of the target plate 4306 . The laterally extending magnetic portion 5526 is between the loading surface 110 of the carrier board 102 and the lower protection surface 432 of the protection element 408 .

In one embodiment, the target plate 4306 , the protection element 408 and the magnetic element 5518 can be simultaneously bonded on the carrier plate 102 through the adhesive layer 204 in the same process step, without adding additional manufacturing processes.

In one embodiment, an adhesive layer (not shown) can also be optionally provided between the adjacent two surfaces of the magnetic element 5518, the protective element 408, and the surface of the target plate 4306 to adhere to each other, or can be used in other ways. Appropriate joining means or joining elements (not shown) are fixed to each other. The height (or thickness) H32 of the magnetic element 5518 is between 0.1 mm and 0.5 mm.

FIG. 6 shows a schematic cross-sectional view of the sputtering target structure of the sixth embodiment, and the differences between it and the sputtering target structure shown in FIG. 5 are explained as follows. The magnetic element 3518 includes a vertically extending magnetic portion 3524 and a laterally extending magnetic portion 5526 adjacent to each other. The laterally extending magnetic portion 5526 is disposed in a direction facing away from the protection element 408 , and the laterally extending magnetic portion 5526 is located between the carrying surface 110 of the carrier plate 102 and the lower target surface 4330 of the target plate 4306 . The upper magnetic surface 3526U and the lower magnetic surface 3526G of the laterally extending magnetic portion 3526 are completely covered by the adhesive layer 204 .

In one embodiment, the target plate 4306 , the protection element 408 and the magnetic element 3518 can be simultaneously bonded on the carrier plate 102 through the adhesive layer 204 in the same process step without adding additional manufacturing processes.

In one embodiment, an adhesive layer (not shown) can also be optionally provided between the adjacent two surfaces of the magnetic element 3518, the protective element 408, and the surface of the target plate 4306 to adhere to each other, or can be used in other ways. Suitable engagement means or engagement elements (not shown) are secured to each other.

In one embodiment, the upper magnetic surface 3526U of the laterally extending magnetic portion 3526 is adjacent to the target plate 4306 and/or the lower magnetic surface 3526G of the laterally extending magnetic portion 3526 is adjacent to the carrier plate 102 (not shown).

FIG. 7 shows a schematic cross-sectional view of the sputtering target structure of the seventh embodiment, and the differences between it and the sputtering target structure shown in FIG. 5 are explained as follows. The magnetic element 7518 includes a vertically extending magnetic portion 3524 and a laterally extending magnetic portion 7526 adjacent to each other. The laterally extending magnetic portion 7526 is between the lower target surface 4330 of the target plate 4306 and the upper protective surface 434 of the protective element 408 . The height (or thickness) H33 of the magnetic element 7518 is between 0.1 mm and 0.5 mm.

In one embodiment, an adhesive layer may also be selectively provided or bonded in other ways between the interface between the magnetic element 7518 and the protection element 408 (not shown in the figure).

In one embodiment, the magnetic element 7518 can be bonded to the protective element 408 first, and then bonded to the carrier 102 with the adhesive layer 204 at the same time, without adding additional manufacturing processes.

To sum up, although the present invention has been disclosed by the above embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

102: carrier board

110: bearing surface

204: Adhesive layer

306: target plate

312: Side wall target surface

312A: first side wall target surface

312B: Second side wall target surface

314: Lower target surface

316L: part of the lower side wall surface

316T: part of the upper side wall surface

408: Protection element

408A: The first protection element

408B: Second protection element

H, H1, H2: Height

L1, L2: Length

Claims (4)

A sputtering target structure, comprising: a carrier plate, including a bearing surface; a target plate, on the bearing surface, and including a target notch; and a magnetic element, arranged in the target notch, wherein The target notch is located at the lower edge portion of the target plate. A sputtering target structure, comprising: a carrier plate, including a bearing surface; a target plate, on the bearing surface, and including an upper side wall surface part, a lower side wall surface part and a lower target material surface adjacent to the upper side wall Between the surface portion and the lower sidewall surface portion, the target plate includes a target recess defined by the lower sidewall surface portion and the lower target surface; and a protective element disposed in the target recess, wherein The target plate only has the protection element on the lower sidewall surface portion and the lower target surface, wherein the target notch is located at the lower edge portion of the target plate. The sputtering target structure as claimed in claim 2 further includes a magnetic element, which is disposed in the target recess together with the protective element. The sputtering target structure as claimed in claim 1, wherein the target plate includes a lower target surface and a sidewall target surface, and the target notch is defined by the lower target surface and the sidewall target surface.

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