TWI793123B - Stripping device - Google Patents
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- TWI793123B TWI793123B TW107115379A TW107115379A TWI793123B TW I793123 B TWI793123 B TW I793123B TW 107115379 A TW107115379 A TW 107115379A TW 107115379 A TW107115379 A TW 107115379A TW I793123 B TWI793123 B TW I793123B
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Abstract
不會在晶圓的外周部分殘留樹脂,而適當地將保護構件從晶圓剝離。 剝離裝置(1),為將在晶圓(W)的一方的面介著樹脂(R)而將膜固著而成之保護構件(P)從晶圓剝離之物。剝離裝置,具備將保護構件從晶圓剝離而殘留保護構件的外周的一部分之外周剝離手段(4)、及將保護構件全體從晶圓剝離之全體剝離手段(5)。全體剝離手段,具備把持未藉由外周剝離手段被剝離而殘留之外周的一部分之把持部(50)、及將保護構件的下面中央部分予以推壓之輥部(52b)。全體剝離手段,一面將在輥部之保護構件的中央部分朝向晶圓推抵一面將保護構件全部剝離。The protective member is properly peeled off from the wafer without resin remaining on the outer peripheral portion of the wafer. The peeling device (1) is for peeling the protective member (P) formed by fixing a film on one surface of the wafer (W) through a resin (R) from the wafer. The peeling device includes outer peripheral peeling means (4) for peeling the protective member from the wafer to leave a part of the outer periphery of the protective member, and overall peeling means (5) for peeling the entire protective member from the wafer. The whole peeling means includes a holding part (50) for holding a part of the outer periphery that has not been peeled off by the outer peripheral peeling means, and a roller part (52b) for pressing the central part of the lower surface of the protective member. The whole peeling means completely peels off the protective member while pushing the central part of the protective member on the roller portion toward the wafer.
Description
本發明有關將被貼附於晶圓的表面之膜予以剝離之剝離裝置。The present invention relates to a peeling device for peeling off a film attached to the surface of a wafer.
在從矽等的鑄錠(ingot)切出而被切片而成之晶圓的表面,會形成有起伏。為了除去起伏,在晶圓的表面,會介著液狀樹脂而貼附有薄片(本發明中稱為膜)作為保護構件。晶圓的表面形狀會被轉印至液狀樹脂,令液狀樹脂硬化後藉由將晶圓的相反面做磨削加工便會除去起伏。磨削後,將硬化的樹脂及薄片從晶圓剝離。Undulations are formed on the surface of wafers cut out from an ingot of silicon or the like and sliced. In order to remove waviness, a sheet (referred to as a film in the present invention) is attached as a protective member on the surface of the wafer through a liquid resin. The surface shape of the wafer is transferred to the liquid resin, and after the liquid resin is cured, the undulations are removed by grinding the opposite side of the wafer. After grinding, the hardened resin and flakes are peeled off from the wafer.
不過,當對晶圓的表面供給液狀樹脂而貼附薄片時,液狀樹脂會被擠壓攤開,藉此液狀樹脂會從晶圓的外周(邊緣)溢出。液狀樹脂係照射紫外線而被硬化,由樹脂及薄片成為保護構件。作為將這樣從晶圓的外周溢出之樹脂及薄片(保護構件)予以剝離之裝置,例如提出有專利文獻1記載之剝離裝置。However, when the liquid resin is supplied to the surface of the wafer to attach the sheet, the liquid resin is squeezed and spread, whereby the liquid resin overflows from the outer periphery (edge) of the wafer. The liquid resin is irradiated with ultraviolet rays to be hardened, and the resin and the sheet become a protective member. As an apparatus for peeling the resin and the sheet (protective member) protruding from the outer periphery of the wafer in this way, a peeling apparatus described in Patent Document 1, for example, has been proposed.
專利文獻1中,對於從晶圓的外周溢出的樹脂於厚度方向賦予外力,藉此在晶圓的邊緣與樹脂之間形成局部性的間隙,來造出將薄片及樹脂剝離時之開端。 [先前技術文獻] [專利文獻]In Patent Document 1, an external force is applied in the thickness direction to the resin protruding from the outer periphery of the wafer, thereby forming a local gap between the edge of the wafer and the resin, and creating a starting point for peeling off the chip and the resin. [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2012-151275號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2012-151275
然而,即使是專利文獻1記載之剝離裝置,料想仍會導致在晶圓的外周部分有樹脂殘留,而無法將保護構件適當地剝離。在此情形下,於後續的磨削加工中,外周部分的厚度恐不會成為均一。However, even with the peeling device described in Patent Document 1, it is expected that resin remains on the outer peripheral portion of the wafer, and the protective member cannot be properly peeled off. In this case, the thickness of the outer peripheral portion may not become uniform in the subsequent grinding process.
本發明係有鑑於這點而創作,目的之一在於提供一種不會在晶圓的外周部分殘留樹脂,而能夠適當地將保護構件從晶圓剝離之剝離裝置。The present invention was made in view of this point, and one object of the present invention is to provide a peeling device capable of properly peeling a protective member from a wafer without resin remaining on the outer peripheral portion of the wafer.
本發明一個態樣之剝離裝置,係於形成有膜從晶圓的外周緣溢出之溢出部的狀態下將膜介著樹脂固著於晶圓的一方的面,而將由樹脂與膜所成之保護構件從晶圓剝離之剝離裝置,其特徵為,具備:保持手段,具有保持面,該保持面是將保護構件面向下而將成為上面之晶圓的另一方的面予以吸引保持;及外周剝離手段,把持溢出部,將保護構件的外周部分從晶圓剝離而殘留外周的一部分;及全體剝離手段,把持殘留之外周的一部分的溢出部,從保護構件的外周部分側將保護構件全體從晶圓剝離;全體剝離手段,具備:第1把持部,把持未藉由外周剝離手段被剝離而殘留之外周的一部分的溢出部;及輥,將未藉由外周剝離手段被剝離而固著於晶圓之保護構件的中央部分予以推壓;及移動手段,令第1把持部與保持手段相對地於保持面方向移動;藉由輥,一面將保持手段保持的晶圓的中央部分之保護構件朝向晶圓推抵,一面將保護構件從晶圓全部剝離。 In the peeling device according to one aspect of the present invention, the film is fixed on one side of the wafer with a resin interposed therebetween in the state where an overflow portion where the film overflows from the outer periphery of the wafer is formed, and the film formed by the resin and the film is fixed to one surface of the wafer. A peeling device for peeling a protective member from a wafer, characterized by comprising: holding means having a holding surface for attracting and holding the other surface of the upper wafer with the protective member facing downward; The peeling means grasps the overflow part, and peels the outer peripheral part of the protective member from the wafer to leave a part of the outer periphery; Wafer peeling; the whole peeling means is equipped with: a first holding part that holds a part of the overflow part of the outer periphery that has not been peeled off by the outer peripheral peeling means; The central part of the protection member of the wafer is pushed; and the moving means moves the first holding part and the holding means relative to the direction of the holding surface; the protection member of the central part of the wafer held by the holding means on one side by means of rollers While pushing against the wafer, the protective member is completely peeled off from the wafer.
按照此構成,從晶圓的外周緣溢出之溢出部,是藉由外周剝離手段而朝水平方向及垂直方向被拉伸。藉此,在晶圓的外周,除一部分以外會在樹脂與晶圓之間形成間隙。然後,以該間隙為開端,能夠藉由全體剝離手段將保護構件從晶圓剝離。此時,是一面讓保護構件的中央部分藉由輥被推壓一面讓第1把持部移動,因此能夠防止在晶圓的外周部分發生剝離不全。亦即,不會在晶圓的外周部分殘留樹脂,而可適當地將保護構件從晶圓剝離。 According to this configuration, the overflow portion protruding from the outer periphery of the wafer is stretched horizontally and vertically by the peripheral peeling means. As a result, a gap is formed between the resin and the wafer except for a part of the outer periphery of the wafer. Then, starting from this gap, the protective member can be peeled off from the wafer by the whole peeling means. At this time, since the first gripping portion is moved while the central portion of the protective member is pushed by the roller, it is possible to prevent incomplete peeling from occurring at the outer peripheral portion of the wafer. That is, the protective member can be properly peeled off from the wafer without resin remaining on the outer peripheral portion of the wafer.
此外,本發明一個態樣之上述剝離裝置中,外周剝離手段,具備:複數個第1外周剝離手段,以晶圓的中心為中心而以規定的角度間隔配設;複數個第2外周剝離手段,配設於第1外周剝離手段之間;第1外周剝離手段與第2外周剝離手段,具備:第2把持部,把持溢出部;及水平移動部,令第2把持部於保持面方向朝自晶圓的外周遠離之方向移動;及下降部,令藉由水平移動部而移動 了的第2把持部,於相對於保持面而言正交之垂直方向下降。 In addition, in the above peeling device according to one aspect of the present invention, the peripheral peeling means includes: a plurality of first peripheral peeling means arranged at predetermined angular intervals around the center of the wafer; a plurality of second peripheral peeling means , arranged between the first peripheral peeling means; the first peripheral peeling means and the second peripheral peeling means have: a second holding part, holding the overflow part; and a horizontal movement part, so that the second holding part faces in the direction of the holding surface Move in a direction away from the outer periphery of the wafer; and the descending portion moves by the horizontal moving portion The second gripping portion that has been placed descends in a vertical direction that is perpendicular to the holding surface.
此外,本發明一個態樣之上述剝離裝置中,外周剝離手段,具備:第2把持部,把持溢出部;及水平移動部,令第2把持部於保持面方向朝自晶圓的外周遠離之方向移動;及下降部,令藉由水平移動部而移動了的第2把持部,於相對於保持面而言正交之垂直方向移動;及外周移動手段,令第2把持部、及水平移動部、及下降部藉由以晶圓的中心為軸之旋轉軸而沿著晶圓的外周旋轉移動。 In addition, in the above peeling device according to one aspect of the present invention, the peripheral peeling means includes: a second gripping part that grips the overflow part; and a horizontal movement part that moves the second gripping part away from the outer periphery of the wafer in the direction of the holding surface. direction; and the descending part, which moves the second holding part moved by the horizontal moving part in the vertical direction perpendicular to the holding surface; and the outer peripheral moving means, which makes the second holding part and the second holding part move horizontally The lower portion and the descending portion rotate and move along the outer periphery of the wafer with a rotation axis about the center of the wafer.
按照本發明,不會在晶圓的外周部分殘留樹脂,而能夠適當地將保護構件從晶圓剝離。 According to the present invention, the protective member can be properly peeled off from the wafer without resin remaining on the outer peripheral portion of the wafer.
以下參照所附圖面,說明本實施形態之剝離裝置。圖1為本實施形態之剝離裝置的全體立體圖。另,本實施形態之剝離裝置,不限定於如圖1所示般剝離專用的裝置構成,例如,亦可組入至以全自動實施磨削加工、研磨加工、洗淨等一連串加工之全自動型式的加工裝置。此外,圖1中,將X軸方向臨面側訂為剝離裝置的前側、X軸方向裏側訂為剝離裝置的後側、Y軸方向臨面側訂為剝離裝置的左側、Y軸方向裏側訂為剝離裝置的右側。此外,圖1所示之晶圓,為便於說明,係誇張表示其大小。 The peeling device of this embodiment will be described below with reference to the attached drawings. Fig. 1 is an overall perspective view of a peeling device according to this embodiment. In addition, the stripping device of the present embodiment is not limited to the configuration of a dedicated stripping device as shown in FIG. type of processing device. In addition, in Fig. 1, the side facing the X-axis direction is defined as the front side of the stripping device, the back side of the X-axis direction is defined as the rear side of the stripping device, the side facing the Y-axis direction is defined as the left side of the stripping device, and the back side of the Y-axis direction is defined as is the right side of the stripper. In addition, the size of the wafer shown in FIG. 1 is exaggerated for convenience of description.
如圖1所示,剝離裝置1,構成為將被貼附於圓形的晶圓W之保護構件P予以剝離。晶圓W,例如為形 成元件圖樣之前的原切片晶圓(as-sliced wafer),係將圓柱狀的鑄錠以線鋸切片而形成。 As shown in FIG. 1 , the peeling device 1 is configured to peel the protective member P attached to the circular wafer W. As shown in FIG. Wafer W, for example of shape The as-sliced wafer before patterning is formed by slicing a cylindrical ingot with a wire saw.
晶圓W,不限定於矽、砷化鎵、碳化矽等的工件。例如,亦可將陶瓷、玻璃、藍寶石系的無機材料基板、板狀金屬或樹脂的延性材料、要求微米尺度至次微米尺度的平坦度(TTV:Total Thickness Variation)之各種加工材料訂為晶圓W。此處所謂的平坦度,例如表示將晶圓W的被磨削面訂為基準面而測定厚度方向得出的高度當中,最大值與最小值之差。 The wafer W is not limited to workpieces such as silicon, gallium arsenide, and silicon carbide. For example, ceramics, glass, sapphire-based inorganic material substrates, sheet metal or resin ductile materials, and various processing materials that require flatness (TTV: Total Thickness Variation) from the micrometer scale to the submicrometer scale can also be ordered as wafers. W. The flatness here means, for example, the difference between the maximum value and the minimum value among the heights measured in the thickness direction with the surface to be ground of the wafer W as a reference plane.
保護構件P,是在具有晶圓W的外徑以上之外徑的膜F的全面例如塗布光硬化性的樹脂R而構成。亦即,保護構件P,具備:膜F,具有比晶圓W還寬的面積而從晶圓W的外周溢出的溢出部E;及樹脂R,形成於膜F與晶圓W的下面(一方的面)之間(參照圖2)。 The protective member P is formed by coating, for example, a photocurable resin R on the entire surface of the film F having an outer diameter equal to or larger than the outer diameter of the wafer W. That is, the protective member P includes: a film F having an area wider than the wafer W and an overflow portion E overflowing from the outer periphery of the wafer W; and a resin R formed on the lower surface of the film F and the wafer W (one side). face) between (refer to Figure 2).
樹脂R,例如藉由被紫外線光照射而被硬化,膜F介著該樹脂R而被固著於晶圓W的下面。藉此,晶圓W的下面,會藉由薄片狀的保護構件P而被全體性地覆蓋,受到保護。此外,於晶圓W的外周側,在溢出部E的上面,樹脂R的一部分係溢出。另,樹脂R的材質並無特別限定,可適當變更。 The resin R is cured by, for example, being irradiated with ultraviolet light, and the film F is fixed on the lower surface of the wafer W through the resin R. Thereby, the lower surface of the wafer W is entirely covered and protected by the sheet-shaped protective member P. As shown in FIG. In addition, on the outer peripheral side of the wafer W, on the upper surface of the overflow portion E, a part of the resin R overflows. In addition, the material of resin R is not specifically limited, It can change suitably.
此外,在切片後的晶圓W的表面,會形成起伏。此起伏,是藉由在貼附有保護構件P的狀態下晶圓W的上面受到磨削加工,而事先被除去。 In addition, undulations are formed on the surface of wafer W after dicing. These undulations are removed in advance by subjecting the upper surface of the wafer W to a grinding process with the protective member P attached thereto.
如上述般,剝離裝置1,構成為將由樹脂R與膜F所成之保護構件P從晶圓W剝離,又,將剝離的保護構件P丟棄至裝置內的垃圾桶9。具體而言剝離裝置1,構成為在從俯視矩形狀的基台10的上面朝Z軸方向立起之立壁部11的側面,設置保持而搬送晶圓W之保持手段2、及從晶圓W將保護構件P剝離之剝離手段3。保持手段2配置於立壁部11的上側,剝離手段3配置於保持手段2的下方。As described above, the peeling device 1 is configured to peel the protective member P made of the resin R and the film F from the wafer W, and to discard the peeled protective member P into the trash can 9 inside the device. Specifically, the peeling device 1 is configured such that a
保持手段2,構成為將保護構件P面向下方而保持晶圓W的上面(另一方的面)。具體而言保持手段2,是以和晶圓W略同直徑的搬送墊20來將晶圓W的上面予以吸引保持。搬送墊20,為將晶圓W吸引保持之多孔夾盤(porous chuck),在圓板狀的框體的下面形成有由陶瓷等多孔質材所構成之保持面21(參照圖2)。藉由在保持面21產生的負壓,可將晶圓W吸引保持。The
搬送墊20,懸吊於朝Y軸方向延伸之臂22的先端(左端)而受到支撐。保持手段2,藉由昇降手段23構成為可於Z軸方向昇降,並且藉由水平移動手段24構成為可於X軸方向移動。昇降手段23,令將臂22的基端予以支撐之Z軸桌台25藉由馬達驅動的導引致動器而於Z軸方向移動。The
水平移動手段24,令將Z軸桌台25予以支撐之X軸桌台26藉由馬達驅動的導引致動器而於X軸方向移動。另,昇降手段23及水平移動手段24,不限定於馬達驅動的導引致動器,例如亦可由空氣驅動的導引氣缸來構成。The horizontal moving means 24 makes the X-axis table 26 supporting the Z-axis table 25 move in the X-axis direction by the motor-driven guide actuator. In addition, the elevating
剝離手段3,藉由將保護構件P的外周部分從晶圓W剝離之外周剝離手段4、及將保護構件P的全體從晶圓W剝離之全體剝離手段5所構成。外周剝離手段4及全體剝離手段5,設於略同一高度,外周剝離手段4配置於X軸方向裏側(後側),全體剝離手段5配置於X軸方向臨面側(前側)。有關外周剝離手段4的詳細構成後述之。The peeling means 3 is composed of an outer peripheral peeling means 4 for peeling the outer peripheral portion of the protective member P from the wafer W, and a whole peeling means 5 for peeling the entire protective member P from the wafer W. The outer peripheral peeling means 4 and the whole peeling means 5 are arranged at approximately the same height, the outer peripheral peeling means 4 is arranged on the inner side (rear side) in the X-axis direction, and the
全體剝離手段5,構成為包含將溢出部E予以把持之把持部50(第1把持部)、及令把持部50於規定方向移動之移動手段51、及推壓膜F的下面而引導保護構件P的剝離之導引輥52。The
把持部50,構成為藉由一對爪部50a,而於厚度方向挾持溢出部E的一部分。一對爪部50a相向配置,構成為可互相遠離接近。把持部50,設於朝Y軸方向延伸之臂53的先端(左端)。把持部50,構成為可以臂53的延伸方向為軸而旋轉,並且藉由移動手段51而可於Z軸方向及X軸方向移動。The
移動手段51,令將臂53的基端予以支撐之X軸桌台54藉由馬達驅動的導引致動器而於X軸方向移動。此外,雖未圖示,但臂53構成為可在X軸桌台54上上下地昇降。另,移動手段51,不限定於馬達驅動的導引致動器,例如亦可由空氣驅動的導引氣缸來構成。The moving means 51 moves the X-axis table 54 supporting the base end of the
導引輥52,設於搬送墊20與移動手段51之間。導引輥52,構成為在從立壁部11朝Y軸方向左側突出之軸部52a的先端安裝以規定長度延伸之輥部52b。輥部52b,在搬送墊20的下方朝Y軸方向延伸,具有和晶圓W的直徑相比充分短之圓柱形狀。此外,輥部52b,構成為可繞軸旋轉。詳細後述之,惟全體剝離工程中,輥部52b,係推壓未藉由外周剝離手段4被剝離而固著於晶圓W之保護構件P(膜F的下面)的中央部分。The
在剝離手段4的下方,設有回收剝離後的保護構件P之垃圾桶9。垃圾桶9,上方具有比晶圓W還大而開放之俯視方形狀。此外,在垃圾桶9,在於X方向相向之一邊的上端部分設有一對光學感測器90。一對光學感測器90,一方由發光部,另一方由受光部所構成。光學感測器90,係受光部接受從發光部發生的光,基於受光部的受光量變化,來偵測被回收至垃圾桶9之保護構件P是否裝滿。Below the peeling means 4, a
此外,在垃圾桶9的上方,設有令剝離後的保護構件P層積於垃圾桶9內之層積手段6。層積手段6,藉由令保護構件P引導至垃圾桶9之第1導引手段7及第2導引手段8所構成。第1導引手段7,於垃圾桶9的後下方,設於全體剝離手段5的下方,藉由愈向前方則愈朝下方傾斜之一對導軌70所構成。In addition, above the
導軌70,例如形成為具有圓形截面之棒狀,具有和保護構件P的外形略同一之長度。此外,導軌70的先端(下端)部分,朝水平方向屈曲。該先端部分,配置於垃圾桶9的X方向後方側中的一邊的上端部分。此外,一對導軌70,設計成夾著垃圾桶9的Y方向之中心線而相向,以比保護構件P的外徑還充分小之間隔而平行配置。The
第2導引手段8,藉由以前後地跨越垃圾桶9的上方之方式水平延伸之一對導軌80所構成。導軌80,例如形成為具有圓形截面之棒狀,以比保護構件P的外徑還大之長度延伸。導軌80的一端(後端),位於垃圾桶9的X方向後方側中的一邊的上端部分,另一端(先端)位於垃圾桶9的X方向前方側中的一邊的上端部分。此外,一對導軌80,是以愈從後方向前方而其相向間隔愈變大之方式,配置成俯視(上箭視)八字狀。The second guide means 8 is constituted by a pair of
像這樣構成之剝離裝置1,是將被除去起伏後的晶圓W藉由保持手段2予以吸引保持,而將貼附有保護構件P的狀態之晶圓W先搬送至外周剝離手段4。外周剝離手段4中,僅保護構件P的外周部分從晶圓W被剝離。然而,藉由全體剝離手段5而保護構件P的全體從晶圓W被剝離。被剝離的保護構件P,藉由構成層積手段6之第1導引手段7及第2導引手段8而受到導引,落下至垃圾桶9內。一旦在垃圾桶9內層積複數個保護構件P,垃圾桶9被保護構件P裝滿,則因應光學感測器90之輸出,對操作者做通報。In the peeling apparatus 1 thus constituted, the wafer W from which the waviness has been removed is sucked and held by the holding means 2 , and the wafer W with the protective member P attached thereto is first conveyed to the peripheral peeling means 4 . In the peripheral peeling means 4 , only the peripheral portion of the protective member P is peeled from the wafer W. As shown in FIG. However, the whole protection member P is peeled from the wafer W by the whole peeling means 5 . The peeled protective member P is guided by the first guide means 7 and the second guide means 8 constituting the stacking
接下來,參照圖1及圖2,針對本實施形態之外周剝離手段詳細說明。圖2為本實施形態之剝離裝置的模型圖。Next, referring to FIG. 1 and FIG. 2 , the peripheral peeling means of this embodiment will be described in detail. Fig. 2 is a model diagram of a peeling device according to this embodiment.
如圖1及圖2所示,外周剝離手段4構成為,於全體剝離手段5的後方,在從立壁部11朝Y軸方向突出之基台40的上面,設置具有以Z軸方向為中心軸之圓筒狀的限制環41、及配置於限制環41的周圍之複數個把持手段42。限制環41,構成為具有比晶圓W或搬送墊20的外徑還小之外徑,可於Z軸方向昇降。詳細後述之,惟此限制環41,發揮限制外周緣剝離工程中的保護構件P的剝離餘邊之功用。As shown in Fig. 1 and Fig. 2, the outer peripheral peeling means 4 is constituted such that, at the rear of the whole peeling means 5, on the upper surface of the base 40 protruding from the
限制環41的周圍,以等角度間隔被分成8個區域,在除了X軸方向裏側的1區域之7個區域各配置1個把持手段42。亦即,7個把持手段42,以晶圓W的中心為中心而以規定角度間隔配設。此處如圖1所示,將從和X軸方向裏側的區域鄰接之區域起算每跳1個地配置之4個把持手段42定義成第1剝離群組G1(第1外周剝離手段),將配置於構成第1剝離群組G1的把持手段42之間之3個把持手段42定義成第2剝離群組G2(第2外周剝離手段)。另,7個把持手段42,為求說明簡便,訂為全部以同一的符號表示。The periphery of the restricting
把持手段42,構成為包含把持溢出部E之把持部43(第2把持部)、及令把持部43於保持手段2的保持面方向(水平方向)移動之水平移動部44、及令把持部43於相對於保持面21而言垂直方向移動(下降)之垂直移動部(下降部)。把持部43,藉由支撐溢出部E的下面之下面支撐部45、及支撐溢出部E的上面之上面支撐部46所構成。上面支撐部46,和下面支撐部45相向配置。上面支撐部46,構成為例如藉由空氣汽缸而可相對於下面支撐部45而言於Z軸方向昇降。以上面支撐部46及下面支撐部45夾住溢出部E,藉此便可把持溢出部E。The holding means 42 is configured to include a holding part 43 (second holding part) for holding the overflow part E, a horizontal moving
下面支撐部45,設於側視L字狀的移動塊47的上端側,藉由未圖示之垂直移動部(下降部),上面支撐部46及下面支撐部45可沿著移動塊47昇降。此外,水平移動部44,藉由馬達驅動的導引致動器而令移動塊47於水平方向(晶圓W的徑方向)移動。另,垂直移動部及水平移動部44,不限定於馬達驅動的導引致動器,例如亦可由空氣驅動的導引氣缸來構成。The lower supporting
另一方面,習知的剝離裝置中,存在一種對於從晶圓的外周溢出的樹脂於厚度方向賦予外力,藉此在晶圓的邊緣與樹脂之間形成局部性的間隙,來造出將薄片及樹脂剝離時之開端者。然後,將和該開端的部分相對應之保護構件予以把持,令保護構件以翻捲之方式動作,藉此便可從晶圓將保護構件剝離。然而,即使是這樣的剝離裝置,料想仍會導致在晶圓的外周部分有樹脂殘留,而無法將保護構件適當地剝離。在此情形下,於後續的磨削加工中,外周部分的厚度恐不會成為均一。On the other hand, in the known peeling device, there is a method of applying an external force in the thickness direction to the resin overflowing from the outer periphery of the wafer, whereby a local gap is formed between the edge of the wafer and the resin to produce a thin film. And the beginning of resin peeling. Then, the protective member corresponding to the portion of the opening is grasped, and the protective member is rolled up so that the protective member can be peeled off from the wafer. However, even with such a peeling device, it is expected that resin remains on the outer peripheral portion of the wafer, and the protective member cannot be properly peeled off. In this case, the thickness of the outer peripheral portion may not become uniform in the subsequent grinding process.
鑑此,本案發明者等,想到了不在晶圓的外周部分殘留樹脂,而適當地將保護構件從晶圓剝離。具體而言本實施形態中,是藉由外周剝離手段4將保護構件P的外周予以剝離而僅殘留一部分,藉由全體剝離手段5把持該保護構件P的一部分而沿著晶圓W的面方向朝向相反側的外周部拉伸,藉此將保護構件全體從晶圓W剝下。此時,導引保護構件P的剝離之導引輥52(輥部52b),是對膜F的下面僅推壓Y方向的中央部分。In view of this, the inventors of the present application thought of appropriately peeling the protective member from the wafer without leaving resin on the outer peripheral portion of the wafer. Specifically, in the present embodiment, the outer periphery of the protective member P is peeled off by the peripheral peeling means 4 to leave only a part, and the part of the protective member P is grasped by the whole peeling means 5 along the surface direction of the wafer W. By stretching toward the outer peripheral portion on the opposite side, the entire protective member is peeled off from the wafer W. At this time, the guide roller 52 (
像這樣,將輥部52b的Y軸方向的長度設計成僅接觸膜F的中央部分之大小,藉此,先藉由外周剝離手段4而剝離的保護構件P的外周部分,於藉由全體剝離手段5將保護構件P的全體剝離時,不會因輥部52b而妨礙其剝離。其結果,能夠防止在晶圓W的外周部分發生剝離不全。亦即,不會在晶圓W的外周部分殘留樹脂R,而能夠適當地將保護構件P從晶圓W剝離。In this way, the length of the
接下來,參照圖2至圖7,針對本實施形態之保護構件的剝離方法詳細說明。圖3為本實施形態之剝離裝置的把持工程之一例示意圖。圖3A表示把持保護構件前的狀態,圖3B表示把持保護構件後的狀態。圖4為本實施形態之剝離裝置的外周緣剝離工程之一例示意圖。圖5為本實施形態之剝離裝置的外側剝離工程之一例示意圖。圖6為本實施形態之剝離裝置的全體剝離工程之一例示意圖。圖6A至圖6D表示全體剝離工程的動作變遷。圖7為本實施形態之剝離方法的一連串流程示意俯視模型圖。圖7A表示第1剝離群組所做的保護構件之外周剝離的情況,圖7B表示第2剝離群組所做的保護構件之外周剝離的情況,圖7C表示全體剝離手段所做的保護構件之全體剝離的情況。另,圖3至圖5中,示例第1剝離群組所做的剝離。Next, the peeling method of the protective member of this embodiment is described in detail with reference to FIG. 2 to FIG. 7 . Fig. 3 is a schematic view showing an example of the holding process of the peeling device of the present embodiment. FIG. 3A shows a state before the protection member is held, and FIG. 3B shows a state after the protection member is held. Fig. 4 is a schematic view showing an example of the outer peripheral edge peeling process of the peeling device of the present embodiment. Fig. 5 is a schematic view showing an example of the outer peeling process of the peeling device of the present embodiment. Fig. 6 is a schematic diagram showing an example of the overall peeling process of the peeling device of the present embodiment. 6A to 6D show the operation transition of the whole peeling process. FIG. 7 is a schematic top model view of a series of processes of the peeling method of this embodiment. Fig. 7 A shows the situation that the outer periphery of the protective member that the 1st peeling group is done peels off, and Fig. 7 B shows the situation that the outer periphery of the protective member that the 2nd peeling group does is peeled off, and Fig. 7 C shows the situation of the protective member that whole peeling means does The case of overall stripping. In addition, in FIG. 3 to FIG. 5 , the peeling by the first peeling group is exemplified.
本實施形態之保護構件P的剝離方法,係經由把持保護構件P的外周(溢出部E)之把持工程(參照圖3)、及將樹脂的外周緣剝離之外周緣剝離工程(參照圖4)、及將樹脂及膜的外側部分剝離之外側剝離工程(參照圖5)、及將保護構件全體剝離之全體剝離工程(參照圖6)而實施。The peeling method of the protective member P of this embodiment is through the holding process of holding the outer periphery (overflow portion E) of the protective member P (refer to FIG. 3 ), and the peeling process of peeling the outer peripheral edge of the resin (refer to FIG. 4 ). , and the outer peeling process (see FIG. 5 ) of peeling the outer part of the resin and the film, and the overall peeling process (see FIG. 6 ) of peeling the entire protective member.
如圖2所示,保持手段2,是以保護構件P面向下方之方式將晶圓W的上面予以吸引保持。保持手段2,是以限制環41的中心和晶圓W的中心一致之方式,被定位至外周剝離手段4的上方。此時把持部43(上面支撐部46)的先端(徑方向內側的端部),呈被定位至比膜F的外周還外側之狀態。As shown in FIG. 2 , the holding means 2 attracts and holds the upper surface of the wafer W with the protection member P facing downward. The holding means 2 is positioned above the peripheral peeling means 4 so that the center of the
如圖3所示,把持工程中,於限制環41被定位至上昇端之狀態下,晶圓W被載置於限制環41上。亦即,膜F的下面抵接至限制環41的上面,晶圓W及保護構件P成為被夾在限制環41與搬送墊20之間之狀態。As shown in FIG. 3 , in the holding process, the wafer W is placed on the
然後,如圖3A所示,各把持部43,藉由水平移動部44而被移動,使得上面支撐部46及下面支撐部45的徑方向內側的端部和膜F的外周部分於徑方向重疊。又,把持部50,藉由垂直移動部(未圖示)而高度受到調整,使得下面支撐部45的上面和限制環41的上面成為同一高度。藉此,膜F的外周部下面抵接至下面支撐部45的上面。Then, as shown in FIG. 3A , each gripping
然後,如圖3B所示,上面支撐部46降下,上面支撐部46的下面抵接至膜F的上面。藉此,把持部43,把持膜F的外周緣(溢出部E)。Then, as shown in FIG. 3B , the upper
接下來,實施外周緣剝離工程。如圖4所示,外周緣剝離工程中,於把持部43把持了溢出部E之狀態下,各把持部43朝向保持面方向(晶圓W的徑方向外側)移動。藉此,保護構件P朝從晶圓W的外周緣往外側遠離之方向被拉伸。其結果,會從晶圓W的外周,在溢出的樹脂R與晶圓W的外周緣之間形成些微的間隙。Next, the outer peripheral edge peeling process is implemented. As shown in FIG. 4 , in the outer peripheral edge peeling process, each gripping
接下來,實施外側剝離工程。圖4中令把持部43藉由水平移動部44朝徑方向外側(自晶圓W的外周遠離之方向)移動後,如圖5所示,外側剝離工程中,令把持部43進一步朝鉛直方向下方移動。亦即,把持部43,朝從保持面21遠離之方向移動。藉此,樹脂R及膜F的外周部分(溢出部E),朝下方被下拉。其結果,圖4中形成的樹脂R與晶圓W的外周緣之間隙會被擴大,該間隙會到達至晶圓W的外周部下面。Next, the outer peeling process is carried out. In FIG. 4, after the holding
此時,晶圓W的下面,亦即膜F的下面係藉由限制環41而受到支撐,因此上述間隙的擴大會在限制環41的外周緣受到限制。像這樣,藉由限制環41,支撐膜F的下面的規定範圍,藉此便可限制保護構件P的剝離量,亦即剝離餘邊。藉由以上,便能從晶圓W僅剝離保護構件P的外周的規定範圍。At this time, the lower surface of the wafer W, that is, the lower surface of the film F is supported by the
另,圖3至圖5中,是藉由第1剝離群組G1實施把持工程、外周緣剝離工程、外側剝離工程,藉此如圖7A所示,便能將保護構件P的外周的4處以規定的剝離餘邊予以剝離。於第2剝離群組G2中,亦如圖3至圖5般,實施把持工程、外周緣剝離工程、外側剝離工程,藉此便能將位於4個剝離處之間的3處亦以規定的剝離餘邊予以剝離。其結果,如圖7B所示,會成為殘留保護構件P的外周的一部分而保護構件P從晶圓W的外周被剝離之狀態。In addition, in FIGS. 3 to 5, the gripping process, the outer peripheral edge peeling process, and the outer peeling process are implemented by the first peeling group G1. As shown in FIG. The specified stripping margin shall be stripped. In the second peeling group G2, as shown in Fig. 3 to Fig. 5, the holding process, the outer peripheral edge peeling process, and the outer peeling process are carried out, so that the 3 places between the 4 peeling places can also be separated by a predetermined Peel off the remaining edges to peel off. As a result, as shown in FIG. 7B , a part of the outer periphery of the protective member P remains and the protective member P is peeled off from the outer periphery of the wafer W. As shown in FIG.
接下來,實施全體剝離工程。如圖6所示,保持手段2,將晶圓W從外周剝離手段4搬送至全體剝離手段5。全體剝離工程中,首先如圖6A所示,外周緣剝離工程中未被剝離而殘留之保護構件P的外周的一部分(溢出部E),藉由把持部50而被把持。此時,保持手段2被定位,使得輥部52b位於晶圓W的一端側(把持部50把持之側)。又,輥部52b抵接至膜F的下面,晶圓W及保護構件P成為在搬送墊20與輥部52b之間被夾住之狀態。Next, the whole stripping process is implemented. As shown in FIG. 6 , holding means 2 transports wafer W from peripheral peeling means 4 to overall peeling means 5 . In the overall peeling process, first, as shown in FIG. 6A , a part of the outer periphery of the protective member P (overflow portion E) remaining without peeling in the outer peripheral edge peeling process is gripped by the gripping
然後,令保持手段2朝從把持部50遠離之方向移動,如圖6B所示,將外周剝離工程中未被剝離而殘留之保持構件P的外周的一部分(溢出部E)從晶圓的外周緣剝下。接下來,把持部50,以從膜F的把持位置起算朝後方平移之位置為支點,一面旋轉一面朝下方移動。其結果,如圖6C所示,把持部50鄰近的保護構件P從晶圓W的外周被剝下,保護構件P一面抵接至輥部52b(被引導)一面略直角地屈曲。Then, the holding means 2 is moved in a direction away from the holding
再來,如圖6D所示,一面調整把持部50的旋轉角度與高度,一面令把持部50朝向前方,亦即從晶圓W的外周起算以中央為基準之相反側的外周移動,並且令保持手段2亦朝向後方移動。像這樣,令把持部50與晶圓W沿著保持面21的面方向相對移動,藉此便可將保護構件P的全體從晶圓W剝離。Furthermore, as shown in FIG. 6D , while adjusting the rotation angle and height of the holding
此外,如圖7C所示,剝離的途中,保護構件P會藉由輥部52b一面受到引導一面屈曲,但輥部52b係僅推壓膜F的下面中央部分,因此曾被剝離的保護構件P的外周部分不會因輥部52b而朝晶圓W側被推壓。因此,不會阻礙保護構件P的剝離。其結果,不會在晶圓W的外周部分殘留樹脂R,而能夠適當地將保護構件P從晶圓W剝離。In addition, as shown in FIG. 7C , during peeling, the protective member P is bent while being guided by the
另,剝離後的保護構件P,藉由層積手段6(參照圖1)而被層積於垃圾桶9內。此外,圖6中,是設計成令把持部50朝向前方而將保護構件P剝離之構成,但不限定於此構成。例如,亦可令把持部50不朝前方移動而是朝下方持續移動,令保護構件P直角地屈曲而使全體剝離。In addition, the protective member P after peeling is laminated|stacked in the
像以上這樣,按照本實施形態,從晶圓W的外周緣溢出之溢出部E,是藉由外周剝離手段4而朝水平方向及垂直方向被拉伸。藉此,在晶圓W的外周,除一部分以外會在樹脂R與晶圓W之間形成間隙。然後,以該間隙為開端,能夠藉由全體剝離手段5將保護構件P從晶圓W剝離。此時,是一面讓保護構件P的中央部分藉由輥部52b被推抵一面讓把持部50移動,因此能夠防止在晶圓W的外周部分發生剝離不全。亦即,不會在晶圓W的外周部分殘留樹脂,而可適當地將保護構件P從晶圓W剝離。As described above, according to the present embodiment, the overflow portion E overflowing from the outer peripheral edge of the wafer W is stretched horizontally and vertically by the outer peripheral peeling means 4 . As a result, a gap is formed between the resin R and the wafer W on the outer periphery of the wafer W except for a part. Then, starting from this gap, the protective member P can be peeled off from the wafer W by the whole peeling means 5 . At this time, since the holding
例如,上述實施形態中,於圖3所示把持工程中,是設計成將晶圓W載置於限制環41上後再藉由把持部43把持溢出部E之構成,但不限定於此構成。例如,亦可藉由把持部43把持溢出部E後,再令限制環41上昇而使限制環41的上面抵接至膜F的下面。For example, in the above embodiment, in the holding process shown in FIG. 3 , the wafer W is placed on the confining
此外,上述實施形態中,是設計成將外周剝離手段4分成第1剝離群組G1與第2剝離群組G2,而將把持手段42設置7個之構成,但不限定於此構成。把持手段42的個數可適當變更。例如,亦可構成為將把持手段42以等角度間隔配置4個,將保護構件P的外周剝離了規定的4處後,令晶圓W與把持手段42以晶圓W的中心為軸而以規定角度(例如45度)相對旋轉,而將位於先剝離的4個剝離處之間的3處的保護構件P予以剝離。在此情形下,可令搬送墊20繞中心軸旋轉,亦可令4個把持手段42繞晶圓W(或限制環41)的中心軸旋轉。In addition, in the said embodiment, the peripheral peeling means 4 was divided into the 1st peeling group G1 and the 2nd peeling group G2, and the structure which provided seven holding means 42 was designed, but it is not limited to this structure. The number of holding means 42 can be changed appropriately. For example, it may also be configured such that four holding means 42 are arranged at equal angular intervals, and after the outer periphery of the protective member P is peeled off at predetermined four places, the wafer W and the holding means 42 are aligned with the center of the wafer W as an axis. By relative rotation at a predetermined angle (for example, 45 degrees), the protective member P at three locations between the four peeled locations that were peeled off earlier is peeled off. In this case, the
此處,參照圖8至圖13說明變形例之剝離裝置。圖8為變形例之剝離裝置的全體立體圖。圖9~12為變形例之剝離裝置的全體剝離工程示意動作變遷圖。圖13為變形例之剝離裝置的廢棄工程示意圖。Here, a peeling device according to a modified example will be described with reference to FIGS. 8 to 13 . Fig. 8 is an overall perspective view of a peeling device according to a modified example. 9 to 12 are schematic action transition diagrams of the entire peeling process of the peeling device of the modified example. Fig. 13 is a schematic diagram of a disposal process of a peeling device according to a modified example.
如圖8所示,變形例之剝離裝置1,其外周剝離手段4與全體剝離手段5之構成和本實施形態略微相異。具體而言,外周剝離手段4,在基台40的上面設有轉盤40a,在轉盤40a的上面中央設有限制環41。把持手段42,以夾著轉盤40a的中央(限制環41)而相向之方式設有2個。轉盤40a,藉由由電動馬達等所構成之旋轉手段40b,可以轉盤40a的中心為軸而旋轉。藉此,把持手段42,構成為可以被載置於限制環41上之晶圓W的中心為軸而旋轉。亦即,轉盤40a及旋轉手段40b,係構成外周移動手段,令把持手段42藉由以晶圓W的中心為軸之旋轉軸而沿著晶圓W的外周旋轉移動。As shown in FIG. 8 , the peeling device 1 of the modified example is slightly different from the present embodiment in the configuration of the peripheral peeling means 4 and the whole peeling means 5 . Specifically, the peripheral peeling means 4 is provided with a
像這樣構成的外周剝離手段4中,是將保護構件P的外周以2個把持手段42把持規定的2處而予以剝離後,令轉盤40a旋轉規定角度,以把持手段42把持保護構件P的其他處而剝離。將此反覆複數次,便可除規定處以外將保護構件P的外周從晶圓W剝離。In the outer peripheral peeling means 4 thus constituted, after the outer periphery of the protective member P is gripped and peeled at two predetermined places by the two gripping
此外,變形例之全體剝離手段5,並非可以臂53的延伸方向為軸而旋轉而是被固定,這點和本實施形態相異。此外,臂53及把持部50,可藉由由馬達驅動的導引致動器所構成之昇降手段53a而昇降。昇降手段53a,設於X軸桌台54上。In addition, the entire peeling means 5 of the modified example is different from the present embodiment in that it is not rotatable but fixed in the direction in which the
像這樣構成的全體剝離手段5中,如圖9所示,外周緣剝離工程中未被剝離而殘留之保護構件P的外周的一部分(溢出部E),藉由把持部50而被把持。此時,保持手段2被定位,使得輥部52b位於晶圓W的一端側(把持部50把持之側)。又,輥部52b抵接至膜F的下面,晶圓W及保護構件P成為在搬送墊20與輥部52b之間被夾住之狀態。In the overall peeling means 5 thus constituted, as shown in FIG. At this time, the holding means 2 is positioned such that the
然後,保持手段2朝從把持部50遠離之方向略微移動,殘留之保護構件P的外周部分從晶圓W被略微剝離。其後,如圖10所示,一面令把持部50藉由昇降手段53a朝下方移動,一面令保持手段2朝水平方向移動,藉此保護構件P會逐漸被剝離。然後,如圖11所示,再令把持部50朝下方移動,令保持手段2移動直到輥部52b越過晶圓W的其他端部,則保護構件P的全體便從晶圓W被剝離。Then, the holding means 2 is slightly moved in a direction away from the holding
如圖12所示,於剛從晶圓W將保護構件P剝離後,溢出部E的一端會藉由把持部50而維持被把持,保護構件P的另一端側則因自重而垂下。在此狀態下,把持部50藉由昇降手段53a而上昇並且藉由移動手段51(參照圖8)而朝水平方向移動,把持部50被定位至導軌70的鄰近。As shown in FIG. 12 , immediately after the protective member P is peeled off from the wafer W, one end of the overflow portion E is held by the gripping
如圖13所示,一旦把持部50移動到導軌70的上端,保護構件P的膜F側會抵接至一對導軌70的傾斜面。藉此,保護構件P,會以沿著一對導軌70之方式相對於鉛直方向而言略微傾斜。在使保護構件P沿著一對導軌70的狀態下,若一對爪部50a相互遠離,則溢出部E的把持會被解除。As shown in FIG. 13 , once the grasping
保護構件P,藉由自重而沿著一對導軌70朝斜下方傾斜落下,在垃圾桶9的上方,一面藉由一對導軌80而其移動方向被導引成水平方向,一面落下至垃圾桶9內。藉此,剝離後的保護構件P便被廢棄至垃圾桶9內。The protection member P falls obliquely downward along the pair of
此外,上述實施形態中,圖4及圖5所示之外周緣剝離工程、外側剝離工程中,是設計成令把持部43朝水平方向(晶圓W的徑方向外側)移動後,再令其朝垂直方向下方移動來階段性地將保護構件P的外周剝離之構成,但不限定於此。亦可將外周緣剝離工程及外側剝離工程以一連串的流程實施。例如,亦可藉由令把持部43旋轉而使把持部43圓弧移動,來將往徑方向外側之移動與往下方之移動以一連串的流程實施,藉此將保護構件P的外周剝離。In addition, in the above-mentioned embodiment, in the outer peripheral edge peeling process and the outer peeling process shown in FIG. 4 and FIG. Although it moves downward in a vertical direction and peels off the outer periphery of the protection member P step by step, it is not limited to this. It is also possible to perform the outer peripheral peeling process and the outer peeling process in a series of processes. For example, the outer circumference of the protective member P may be peeled off by rotating the gripping
此外,上述實施形態中,是設計成藉由外周剝離手段4來將保護構件P剝離而僅殘留外周的一部分之構成,但不限定於此構成。亦可藉由外周剝離手段4將保護構件P的外周全體剝離。亦即,雖分開實施了第1剝離群組G1所做的外周剝離與第2剝離群組G2所做的外周剝離及全體剝離,但只要將外周部分剝離後再將全體剝離即可。故,亦可第1剝離群組G1、第2剝離群組G2、全體剝離手段5的各自的把持部43、50把持溢出部E,而同時地令外周部分剝離。In addition, in the above-mentioned embodiment, the protection member P is peeled off by the peripheral peeling means 4, and only a part of outer periphery remains, but it is not limited to this structure. The entire periphery of the protective member P may also be peeled off by the peripheral peeling means 4 . That is, although the peripheral peeling by the 1st peeling group G1 and the peripheral peeling and the whole peeling by the 2nd peeling group G2 were implemented separately, what is necessary is just to peel off the whole after peeling off the outer peripheral part. Therefore, the first peeling group G1, the second peeling group G2, and the
另,本實施形態中,說明了剝離裝置單體之構成,但不限定於此構成。本發明,例如亦可適用於實施磨削、研磨、切削等各種加工之各種加工裝置。In addition, in this embodiment, although the structure of a peeling apparatus single body was demonstrated, it is not limited to this structure. The present invention can also be applied to various processing devices for performing various processing such as grinding, lapping, and cutting, for example.
此外,作為加工對象之工件,因應加工的種類,例如亦可使用半導體元件晶圓、光學元件晶圓、封裝基板、半導體基板、無機材料基板、氧化物晶圓、裸陶瓷基板、壓電基板等各種工件。作為半導體元件晶圓,亦可使用元件形成後的矽晶圓或化合物半導體晶圓。作為光學元件晶圓,亦可使用元件形成後的藍寶石晶圓或碳化矽晶圓。此外,作為封裝基板亦可使用CSP(Chip Size Package;晶片尺寸封裝)基板,作為半導體基板亦可使用矽或砷化鎵等,作為無機材料基板亦可使用藍寶石、陶瓷、玻璃等。又,作為氧化物晶圓,亦可使用元件形成後或元件形成前的鉭酸鋰、鈮酸鋰。In addition, as the workpiece to be processed, semiconductor element wafers, optical element wafers, packaging substrates, semiconductor substrates, inorganic material substrates, oxide wafers, bare ceramic substrates, piezoelectric substrates, etc. can also be used depending on the type of processing. Various artifacts. As the semiconductor element wafer, a silicon wafer or a compound semiconductor wafer after element formation may be used. As the optical element wafer, a sapphire wafer or a silicon carbide wafer after element formation can also be used. In addition, a CSP (Chip Size Package) substrate can also be used as a packaging substrate, silicon or gallium arsenide can be used as a semiconductor substrate, and sapphire, ceramics, glass, etc. can be used as an inorganic material substrate. In addition, lithium tantalate and lithium niobate after element formation or before element formation can also be used as the oxide wafer.
此外,上述實施形態中,是設計成導軌70、80形成為具有圓形截面的棒狀之構成,但不限定於此構成。導軌70、80,例如亦可形成為將金屬板彎折而成之板狀體。In addition, in the above-mentioned embodiment, the configuration in which the guide rails 70 and 80 are formed in the shape of a rod having a circular cross section is designed, but the configuration is not limited to this configuration. The guide rails 70 and 80 may be formed, for example, as a plate-shaped body formed by bending a metal plate.
此外,上述實施形態中,作為將保護構件P的中央部分予以推壓之輥,係舉出具備了圓柱狀的輥部52b之導引輥52為例來說明。在此情形下,於全體剝離工程時,膜F的下面與輥部52b的圓筒面是一面做線接觸或面接觸,一面導引保護構件P的剝離。然而,不限定於此構成,可適當變更。輥,只要是將保護構件P的中央部分予以推壓之物,則怎樣的構成均可,例如亦可由具備了球面的球狀之輥來構成。在此情形下,於全體剝離工程時,膜F的下面與輥的球面是一面做點接觸,一面導引保護構件P的剝離。In addition, in the said embodiment, the
此外,雖說明了本發明之各實施形態,但作為本發明之其他實施形態,亦可為將上述實施形態及變形例予以全體地或部分地組合而成者。In addition, although each embodiment of this invention was described, as another embodiment of this invention, what combined the above-mentioned embodiment and modification in whole or in part may be sufficient.
此外,本發明之實施形態不限定於上述的各實施形態,在不脫離本發明的技術性思想的意旨之範圍內亦可做各式各樣的變更、置換、變形。甚至,若因技術的進歩或衍生之其他技術,而能夠以別的方式實現本發明之技術性思想,則亦可用該方法來實施。是故,申請專利範圍,涵括本發明的技術性思想之範圍內可能包含之所有的實施態樣。 [產業利用性]In addition, the embodiments of the present invention are not limited to the above-mentioned embodiments, and various changes, substitutions, and deformations are possible without departing from the scope of the technical idea of the present invention. Even, if the technical idea of the present invention can be realized in other ways due to technical progress or other derived technologies, then this method can also be used for implementation. Therefore, the scope of the patent application includes all possible implementation aspects within the scope of the technical idea of the present invention. [Industrial Utilization]
如以上說明般,本發明,具有不會在晶圓的外周部分殘留樹脂,而能夠適當地將保護構件從晶圓剝離這樣的效果,對於將貼附於晶圓的表面的膜予以剝離之剝離裝置而言特別有用。As described above, the present invention has the effect that the protective member can be properly peeled off from the wafer without resin remaining on the outer peripheral portion of the wafer. Especially useful for devices.
W‧‧‧晶圓P‧‧‧保護構件R‧‧‧樹脂F‧‧‧膜E‧‧‧溢出部1‧‧‧剝離裝置2‧‧‧保持手段21‧‧‧保持面4‧‧‧外周剝離手段42‧‧‧把持手段(第1外周剝離手段、第2外周剝離手段)43‧‧‧把持部(第2把持部)44‧‧‧水平移動部G1‧‧‧第1剝離群組(第1外周剝離手段)G2‧‧‧第2剝離群組(第2外周剝離手段)5‧‧‧全體剝離手段50‧‧‧把持部(第1把持部)51‧‧‧移動手段52b‧‧‧輥部(輥)W‧‧‧wafer P‧‧‧protective member R‧‧‧resin F‧‧‧film E‧‧‧overflow part 1‧‧‧peeling
[圖1]本實施形態之剝離裝置的全體立體圖。 [ Fig. 1 ] An overall perspective view of a peeling device according to this embodiment.
[圖2]本實施形態之剝離裝置的模型圖。 [ Fig. 2 ] A schematic diagram of a peeling device according to this embodiment.
[圖3]本實施形態之剝離裝置的把持工程之一例示意圖。圖3A表示把持保護構件前的狀態,圖3B表示把持保護構件後的狀態。 [ Fig. 3 ] A schematic diagram showing an example of the holding process of the peeling device of the present embodiment. FIG. 3A shows a state before the protection member is held, and FIG. 3B shows a state after the protection member is held.
[圖4]本實施形態之剝離裝置的外周緣剝離工程之一例示意圖。 [ Fig. 4 ] A schematic diagram showing an example of the outer peripheral edge peeling process of the peeling device of the present embodiment.
[圖5]本實施形態之剝離裝置的外側剝離工程之一例 示意圖。 [Fig. 5] An example of the outer peeling process of the peeling device of this embodiment schematic diagram.
[圖6]本實施形態之剝離裝置的全體剝離工程之一例示意圖。圖6A至圖6D表示全體剝離工程的動作變遷。 [ Fig. 6 ] A schematic diagram showing an example of the whole peeling process of the peeling device of the present embodiment. 6A to 6D show the operation transition of the whole peeling process.
[圖7]本實施形態之剝離方法的一連串流程示意俯視模型圖。圖7A表示第1剝離群組所做的保護構件之外周剝離的情況,圖7B表示第2剝離群組所做的保護構件之外周剝離的情況,圖7C表示全體剝離手段所做的保護構件之全體剝離的情況。 [ Fig. 7 ] A schematic plan view of a series of processes of the peeling method of the present embodiment. Fig. 7 A shows the situation that the outer periphery of the protective member that the 1st peeling group is done peels off, and Fig. 7 B shows the situation that the outer periphery of the protective member that the 2nd peeling group does is peeled off, and Fig. 7 C shows the situation of the protective member that whole peeling means does The case of overall stripping.
[圖8]變形例之剝離裝置的全體立體圖。 [ Fig. 8 ] An overall perspective view of a peeling device according to a modified example.
[圖9]變形例之剝離裝置的全體剝離工程示意圖。 [ Fig. 9 ] A schematic diagram of the whole peeling process of the peeling device of the modified example.
[圖10]變形例之剝離裝置的全體剝離工程示意圖。 [ Fig. 10 ] A schematic diagram of the whole peeling process of the peeling device of the modified example.
[圖11]變形例之剝離裝置的全體剝離工程示意圖。 [ Fig. 11 ] A schematic diagram of the whole peeling process of the peeling device of the modified example.
[圖12]變形例之剝離裝置的全體剝離工程示意圖。 [ Fig. 12 ] A schematic diagram of the whole peeling process of the peeling device of the modified example.
[圖13]變形例之剝離裝置的廢棄工程示意圖。 [ Fig. 13 ] Schematic diagram of a disposal process of a peeling device according to a modified example.
50‧‧‧把持部(第1把持部) 50‧‧‧Control Department (1st Control Department)
50a‧‧‧爪部 50a‧‧‧claw
52‧‧‧導引輥 52‧‧‧Guide roller
52b‧‧‧輥部(輥) 52b‧‧‧roller part (roller)
E‧‧‧溢出部 E‧‧‧overflow
F‧‧‧膜 F‧‧‧film
P‧‧‧保護構件 P‧‧‧protection components
R‧‧‧樹脂 R‧‧‧resin
W‧‧‧晶圓 W‧‧‧Wafer
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| JP2017-121797 | 2017-06-22 | ||
| JP2017121797A JP6924625B2 (en) | 2017-06-22 | 2017-06-22 | Peeling device |
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| TW201906060A TW201906060A (en) | 2019-02-01 |
| TWI793123B true TWI793123B (en) | 2023-02-21 |
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| KR (1) | KR102475683B1 (en) |
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| WO2020261529A1 (en) * | 2019-06-28 | 2020-12-30 | 東芝三菱電機産業システム株式会社 | Peeling/gripping device, peeling inspection device, and ultrasonic vibration joining system |
| JP7488117B2 (en) * | 2020-06-04 | 2024-05-21 | 株式会社ディスコ | How to adjust the thickness of protective material |
| JP7488148B2 (en) * | 2020-08-03 | 2024-05-21 | 株式会社ディスコ | Peeling device |
| JP7609651B2 (en) * | 2021-02-16 | 2025-01-07 | 株式会社ディスコ | Peeling device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013149655A (en) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | Exfoliating device, exfoliating system, exfoliating method, and exfoliating program |
| JP2014063882A (en) * | 2012-09-21 | 2014-04-10 | Disco Abrasive Syst Ltd | Resin peeling method and resin peeling device |
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| JP5773660B2 (en) * | 2011-01-19 | 2015-09-02 | 株式会社ディスコ | Resin peeling device and grinding device |
| JP2014067873A (en) * | 2012-09-26 | 2014-04-17 | Nitto Denko Corp | Protective tape peeling method and protective tape peeling device |
| JP6730879B2 (en) * | 2016-08-18 | 2020-07-29 | 株式会社ディスコ | Peeling method and peeling device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013149655A (en) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | Exfoliating device, exfoliating system, exfoliating method, and exfoliating program |
| JP2014063882A (en) * | 2012-09-21 | 2014-04-10 | Disco Abrasive Syst Ltd | Resin peeling method and resin peeling device |
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| JP2019009200A (en) | 2019-01-17 |
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| TW201906060A (en) | 2019-02-01 |
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| KR102475683B1 (en) | 2022-12-07 |
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