TWI792146B - Wafer soaking and cleeaning device - Google Patents
Wafer soaking and cleeaning device Download PDFInfo
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本發明係關於一種晶圓裝置;詳細而言,係關於一種晶圓浸泡清洗裝置。The present invention relates to a wafer device; in detail, it relates to a wafer soaking and cleaning device.
隨者半導體元件的微小化(miniaturization),以及晶片導線連接(interconnection)圖案密度的持續增加,導線逐漸朝向更小線寬與線距(fine line width and space)的方向發展,這使得半導體清洗蝕刻製程面臨更加嚴峻的挑戰。With the miniaturization of semiconductor components and the continuous increase in the pattern density of wafer wire connections (interconnection), the wires gradually develop in the direction of smaller line width and line spacing (fine line width and space), which makes semiconductor cleaning and etching The manufacturing process is facing more severe challenges.
目前晶圓或基板通常需要進行多道清洗與蝕刻處理製程,才能確保最終清洗蝕刻效果,進而滿足元件之製程規格需求。Currently, wafers or substrates usually require multiple cleaning and etching processes in order to ensure the final cleaning and etching effect and meet the process specification requirements of components.
現階段的晶圓清洗仍以濕式清洗為主。濕式清洗通常分為浸泡式清洗和單晶圓旋轉噴洗兩種方式。At this stage, wafer cleaning is still dominated by wet cleaning. Wet cleaning is usually divided into immersion cleaning and single wafer spin spray cleaning.
浸泡式清洗能同時處理複數片晶圓,具有很高的清洗效率。然而隨著半導體元件關鍵尺寸的縮小,浸泡式清洗已經越來越無法滿足濕式清洗的要求,其原因之一在於浸泡式清洗的污染物去除率受到一定的限制。這是因為即使在清洗中使用高純度的化學試劑與去離子水,從晶圓上清洗下來的污染物仍會存在於清洗液中而對基板造成二次污染。為了避免晶圓被二次污染,單晶圓旋轉噴洗正逐步取代浸泡式清洗。Immersion cleaning can process multiple wafers at the same time, and has high cleaning efficiency. However, with the shrinking of the critical dimensions of semiconductor components, immersion cleaning has become increasingly unable to meet the requirements of wet cleaning. One of the reasons is that the removal rate of pollutants in immersion cleaning is limited to a certain extent. This is because even if high-purity chemical reagents and deionized water are used in cleaning, the pollutants cleaned from the wafer will still exist in the cleaning solution and cause secondary pollution to the substrate. In order to avoid secondary contamination of wafers, single-wafer spin spray cleaning is gradually replacing immersion cleaning.
又或者,如本案申請人所獲頒的「晶圓溼處理工作站」專利(證書號:TW I1710017B)所示,可先透過浸泡式清洗的方式處理複數片晶圓,於清洗完畢後將複數片晶圓進行90度翻轉,使複數晶圓呈現水平設置的態樣後,再逐片取出以單晶圓旋轉噴洗完成後續處理,如此便可於避免二次污染的同時,仍提高整體的晶圓清洗效率。Or, as shown in the "Wafer Wet Processing Workstation" patent (Certificate No.: TW I1710017B) issued by the applicant in this case, multiple wafers can be processed by immersion cleaning first, and then the multiple wafers can be processed after cleaning. The wafer is flipped 90 degrees so that multiple wafers are placed horizontally, and then taken out one by one to complete the follow-up treatment with single-wafer spin spray cleaning, so as to avoid secondary pollution while still improving the overall wafer quality. Round cleaning efficiency.
當進行浸泡式清洗時,承載有複數晶圓的晶舟除了要完全浸入至浸泡槽內,尚須控制晶舟在浸泡槽內進行昇降振盪,才能夠讓晶舟內的複數晶圓與浸泡槽內的化學液體充分作用,達到清洗晶圓表面的效果。此外,晶圓被承載於晶舟內時,為了避免晶圓彼此之間發生碰撞,晶圓會對應地被設置於晶舟所具有的晶舟凹槽內,如此一來,當晶舟內的複數晶圓隨著晶舟同步進行昇降振盪時,各晶圓的振盪作動始終會被各晶舟凹槽所限制,這使浸泡槽內的化學液體在清洗晶圓時,化學液體的流場會受到晶舟凹槽的影響,造成流場阻礙,導致靠近晶舟凹槽處的晶圓的二側邊與化學液體無法充分或完全接觸,從而嚴重影響清洗效果。When performing immersion cleaning, in addition to completely immersing the wafer boat carrying multiple wafers into the soaking tank, the wafer boat must be controlled to lift and vibrate in the soaking tank so that the multiple wafers in the wafer boat can be aligned with the soaking tank. The chemical liquid inside is fully functional to achieve the effect of cleaning the wafer surface. In addition, when the wafer is carried in the wafer boat, in order to avoid the wafers from colliding with each other, the wafer will be correspondingly arranged in the wafer boat groove of the wafer boat. In this way, when the wafers in the wafer boat When a plurality of wafers are lifted and oscillated synchronously with the wafer boat, the oscillation movement of each wafer will always be limited by the groove of each wafer boat, which makes the flow field of the chemical liquid in the immersion tank when cleaning the wafers. Affected by the groove of the wafer boat, the flow field is hindered, and the two sides of the wafer near the groove of the wafer boat cannot fully or completely contact with the chemical liquid, thereby seriously affecting the cleaning effect.
有鑑於此,如何提供一種晶圓浸泡清洗裝置,使當晶圓被設置於浸泡槽的化學液體內進行振盪時,化學液體能完全接觸到靠近晶舟凹槽處的晶圓的二側邊,乃為此一業界亟待解決之問題。In view of this, how to provide a wafer immersion cleaning device so that when the wafer is placed in the chemical liquid in the immersion tank for oscillation, the chemical liquid can completely contact the two sides of the wafer near the groove of the wafer boat, This is a problem that the industry needs to solve urgently.
本發明之一目的在於提供一種晶圓浸泡清洗裝置,當晶舟具有的複數晶舟凹槽承載複數晶圓並完全浸入浸泡槽內的化學液體後,振盪機構所具有的頂起平台適可頂持於各晶圓的一底部,頂起平台接著朝上移動一特定距離以帶動複數晶圓朝上移動該特定距離,藉此顯露出原本靠近晶舟凹槽處的晶圓的二側邊。晶圓的二側邊露出於晶舟凹槽後,振盪機構驅動頂起平台,使頂起平台同步驅動複數晶圓進行往復振盪,讓化學液體得以充分且完全地接觸原本靠近晶舟凹槽處的晶圓的二側邊,提升晶圓的清洗效果。One object of the present invention is to provide a wafer immersion and cleaning device. When the plurality of crystal boat grooves of the wafer boat carry multiple wafers and are completely immersed in the chemical liquid in the immersion tank, the jacking platform of the oscillation mechanism is suitable for lifting Holding a bottom of each wafer, the jacking platform then moves upward for a certain distance to drive the plurality of wafers to move upward for the certain distance, thereby exposing two sides of the wafer that were originally close to the groove of the wafer boat. The two sides of the wafer are exposed behind the groove of the wafer boat, and the oscillation mechanism drives the jacking platform, so that the jacking platform synchronously drives multiple wafers to reciprocate and oscillate, so that the chemical liquid can fully and completely contact the place close to the groove of the wafer boat The two sides of the wafer can improve the cleaning effect of the wafer.
為達上述目的,本發明揭示一種晶圓浸泡清洗裝置,包含:To achieve the above purpose, the present invention discloses a wafer immersion cleaning device, comprising:
一浸泡槽,浸泡槽內側用以容納一化學液體;a soaking tank, the inner side of the soaking tank is used to hold a chemical liquid;
一升降機構,設置於浸泡槽上方,升降機構具有一晶舟,晶舟具有複數晶舟凹槽以承載複數晶圓;以及a lifting mechanism, arranged above the soaking tank, the lifting mechanism has a crystal boat, and the crystal boat has a plurality of crystal boat grooves to carry a plurality of wafers; and
一振盪機構,鄰設於浸泡槽,振盪機構具有連接設置的一頂起平台,且頂起平台浸設於浸泡槽之化學液體內;An oscillating mechanism, adjacent to the immersion tank, the oscillating mechanism has a jacking platform connected to it, and the lifting platform is immersed in the chemical liquid in the immersion tank;
其中,當晶舟朝下方的浸泡槽移動,使複數晶舟凹槽所承載的複數晶圓完全浸入化學液體後,頂起平台適可頂持於各晶圓的一底部,頂起平台接著朝上移動一特定距離以帶動複數晶圓朝上移動該特定距離,使各晶圓脫離各晶舟凹槽之限制後,振盪機構驅動頂起平台,使頂起平台驅動複數晶圓進行一往復振盪。Wherein, when the wafer boat moves toward the dipping tank below, after the plurality of wafers carried by the plurality of wafer boat grooves are completely immersed in the chemical liquid, the jacking platform can be held on a bottom of each wafer, and the jacking platform then moves toward the bottom of each wafer. Move up a specific distance to drive a plurality of wafers to move up the specific distance, so that each wafer is free from the restriction of each wafer boat groove, and the oscillation mechanism drives the jacking platform, so that the jacking platform drives multiple wafers to perform a reciprocating oscillation .
於本發明之晶圓浸泡清洗裝置中,複數晶舟凹槽彼此等距設置。In the wafer immersion cleaning device of the present invention, a plurality of wafer boat grooves are equidistant from each other.
於本發明之晶圓浸泡清洗裝置中,晶舟凹槽自晶圓的側邊及側邊下方頂持晶圓。In the wafer immersion cleaning device of the present invention, the wafer boat groove supports the wafer from the side and below the side of the wafer.
於本發明之晶圓浸泡清洗裝置中,當頂起平台設置於浸泡槽內時,頂起平台不與浸泡槽之一底部接觸。In the wafer immersion cleaning device of the present invention, when the lifting platform is arranged in the soaking tank, the lifting platform does not contact with a bottom of the soaking tank.
於本發明之晶圓浸泡清洗裝置中,頂起平台具有複數頂起平台凹槽,且各頂起平台凹槽頂持於各晶圓的底部。In the wafer immersion cleaning device of the present invention, the jacking platform has a plurality of jacking platform grooves, and each jacking platform groove is supported on the bottom of each wafer.
於本發明之晶圓浸泡清洗裝置中,該特定距離介於5 mm~10 mm之間。In the wafer immersion cleaning device of the present invention, the specified distance is between 5 mm and 10 mm.
於本發明之晶圓浸泡清洗裝置中,頂起平台驅動複數晶圓進行往復振盪時,往復振盪的頻率介於30 rpm~100 rpm之間。In the wafer immersion cleaning device of the present invention, when the platform is lifted to drive a plurality of wafers for reciprocating oscillation, the frequency of reciprocating oscillation is between 30 rpm and 100 rpm.
於本發明之晶圓浸泡清洗裝置中,往復振盪為沿一垂直方向之上下振盪。In the wafer immersion cleaning device of the present invention, the reciprocating oscillation is oscillation up and down along a vertical direction.
於本發明之晶圓清洗裝置中,複數晶圓沿一垂直方向或一水平方向插設於複數晶舟凹槽內。In the wafer cleaning device of the present invention, a plurality of wafers are inserted into the grooves of the plurality of wafer boats along a vertical direction or a horizontal direction.
於本發明之晶圓清洗裝置中,當該複數晶圓由一水平式傳動機構送至該晶圓浸泡清洗裝置時,該複數晶圓沿一水平方向插設於該複數晶舟凹槽內,隨後可利用該升降機構之翻轉功能將該晶舟進行垂直翻轉,使該複數晶圓處於垂直設置的方向後,該晶舟再朝下浸入於該浸泡槽的該化學液體內。In the wafer cleaning device of the present invention, when the plurality of wafers are sent to the wafer immersion cleaning device by a horizontal transmission mechanism, the plurality of wafers are inserted into the grooves of the plurality of wafer boats along a horizontal direction, Then the crystal boat can be turned vertically by using the flip function of the lifting mechanism, so that the plurality of wafers are placed in a vertical direction, and then the crystal boat is immersed in the chemical liquid in the immersion tank downwards.
於本發明之晶圓清洗裝置中,當晶舟朝下方的浸泡槽移動,使複數晶舟凹槽所承載的複數晶圓完全浸入化學液體後,晶舟維持固定不動。In the wafer cleaning device of the present invention, when the wafer boat moves toward the dipping tank below to completely immerse the plurality of wafers carried in the grooves of the plurality of wafer boats into the chemical liquid, the wafer boat remains fixed.
本發明係關於一種晶圓浸泡清洗裝置,其乃是基於本案申請人先前獲頒的「晶圓溼處理工作站」專利(證書號:TW I1710017B)而進行的改良。於「晶圓溼處理工作站」專利中,被裝載於晶舟內的複數晶圓乃是以垂直於浸泡槽清洗液之液面的方式朝下浸入於清洗液內。在完成浸泡槽的清洗程序後,將晶舟上升使複數晶圓離開浸泡槽,並透過翻轉部將晶舟進行90度翻轉,使原本垂直設置的晶圓被翻轉為水平設置的晶圓,繼而利用機械手臂將複數晶圓逐片取出以進行單晶圓旋轉噴洗。換言之,申請人先前獲頒的「晶圓溼處理工作站」專利即是透過一站式的「Soaking & Sing wafer Spin 設備」,結合浸泡式清洗與單晶圓旋轉噴洗來提高整體的晶圓清洗效率。The present invention relates to a wafer immersion cleaning device, which is an improvement based on the patent (Certificate No.: TW I1710017B) previously granted to the applicant of this case for "Wafer Wet Processing Workstation". In the "Wafer Wet Processing Workstation" patent, a plurality of wafers loaded in the wafer boat are immersed in the cleaning solution vertically to the liquid surface of the cleaning solution in the immersion tank. After completing the cleaning process of the soaking tank, the wafer boat is raised to allow multiple wafers to leave the soaking tank, and the wafer boat is turned 90 degrees through the flipping part, so that the wafers that were originally set vertically are turned over to wafers that are set horizontally, and then Use the robotic arm to take out multiple wafers one by one for single wafer spin cleaning. In other words, the applicant's previous patent on "Wafer Wet Processing Workstation" is a one-stop "Soaking & Sing Wafer Spin Equipment" that combines immersion cleaning and single wafer spin spraying to improve overall wafer cleaning efficiency.
本發明的晶圓浸泡清洗裝置則是針對晶圓處於浸泡式清洗階段時所進行的優化改良。當複數晶圓處於浸泡式清洗時,本發明晶圓浸泡清洗裝置所具有的頂起平台可朝上移動一特定距離以帶動複數晶圓朝上移動該特定距離,藉此顯露出原本靠近晶舟凹槽處的晶圓的二側邊。晶圓的二側邊露出於晶舟凹槽後,振盪機構驅動頂起平台,使頂起平台驅動複數晶圓進行往復振盪,讓化學液體得以充分且完全地接觸原本靠近晶舟凹槽處的晶圓的二側邊,提升晶圓的清洗效果。The wafer immersion cleaning device of the present invention is optimized and improved when the wafer is in the immersion cleaning stage. When a plurality of wafers are in immersion cleaning, the lifting platform of the wafer immersion cleaning device of the present invention can move upward for a specific distance to drive the plurality of wafers upward to move the specific distance, thereby revealing the Two sides of the wafer at the groove. After the two sides of the wafer are exposed to the groove of the wafer boat, the oscillating mechanism drives the jacking platform, so that the jacking platform drives a plurality of wafers to reciprocate and oscillate, so that the chemical liquid can fully and completely contact the surface that was originally close to the groove of the wafer boat. The two sides of the wafer improve the cleaning effect of the wafer.
參閱圖1,本發明之晶圓浸泡清洗裝置100包含一浸泡槽200、一升降機構300及一振盪機構400。浸泡槽200的內側用以容納一化學液體500。升降機構300設置於浸泡槽200上方,升降機構300具有一晶舟310,且晶舟310具有複數晶舟凹槽312以承載複數晶圓600(圖式中僅繪示單一晶圓600以方便說明)。振盪機構400鄰設於浸泡槽200,振盪機構400具有連接設置的一頂起平台410,且頂起平台410浸設於浸泡槽200之化學液體500內。Referring to FIG. 1 , the wafer
利用升降機構300之翻轉功能將晶舟310進行垂直翻轉(即:90度翻轉),使複數晶圓600處於垂直設置的方向後,晶舟310再朝下浸入於浸泡槽200的化學液體500內。Use the flip function of the
當複數晶圓600由一水平式傳動機構(圖未示出)傳送至晶圓浸泡清洗裝置100的上方時,複數晶圓600乃是先沿一水平方向插設於複數晶舟凹槽312內。隨後,參閱圖2,利用升降機構300之翻轉功能將晶舟310進行垂直翻轉(即:90度翻轉),使複數晶圓600處於垂直設置的方向後,晶舟310再朝下浸入於浸泡槽200的化學液體500內,使複數晶舟凹槽312所承載的複數晶圓600完全地浸入化學液體500內。When the plurality of
參閱圖3及圖4(為方便說明,已省略浸泡槽200與化學液體500的繪示),當複數晶圓600完全浸入化學液體500內後,頂起平台410適可頂持於各晶圓600的一底部610。如圖5及圖6所示,頂起平台410接著朝上移動一特定距離D以帶動複數晶圓600朝上移動特定距離D,使各晶圓600脫離各晶舟凹槽312之限制後,振盪機構400驅動頂起平台410,使頂起平台410同步驅動複數晶圓600進行一往復振盪。Referring to FIG. 3 and FIG. 4 (for the convenience of illustration, the drawing of the
於本實施例中,複數晶舟凹槽312彼此等距設置,且當晶舟310的複數晶舟凹槽312承載複數晶圓600時,晶舟凹槽312是自晶圓600的側邊620及側邊下方622頂持晶圓600。In this embodiment, the plurality of
於一較佳實施例中,當頂起平台410設置於浸泡槽200內時,頂起平台410不與浸泡槽200之一底部210接觸。換言之,頂起平台410是設置於浸泡槽200之底部210的上方。此設置之目的是為了使晶舟310完全浸入浸泡槽200內且頂起平台410頂持於各晶圓600的底部610時,晶圓600的底部610可不與浸泡槽200的底部210碰觸,避免晶圓600的底部610因不當碰觸到浸泡槽200的底部210時所可能對造成的損壞。In a preferred embodiment, when the
請再次參閱圖3,於本發明之晶圓浸泡清洗裝置100中,頂起平台410進一步具有複數頂起平台凹槽412,當複數晶舟凹槽312所承載的複數晶圓600完全浸入化學液體500內之後,便可透過頂起平台410具有的頂起平台凹槽412頂持於各晶圓600的底部610。Please refer to FIG. 3 again. In the wafer
於本發明之晶圓浸泡清洗裝置100中,頂起平台410帶動複數晶圓600朝上移動的特定距離D介於5 mm~10 mm之間。當頂起平台410驅動複數晶圓600進行昇降式的往復振盪時(即:為沿一垂直方向之上下振盪),往復振盪的頻率介於30 rpm~100 rpm之間,且往復振盪的震幅為4 mm。In the wafer
由於頂起平台410帶動複數晶圓600朝上移動特定距離D後,會使得各晶圓600的側邊620及側邊下方622脫離各晶舟凹槽312之限制,故晶圓600上原本靠近晶舟凹槽312處的二側邊620將自晶舟凹槽312處露出,讓化學液體500得以充分並完全地接觸原本靠近晶舟凹槽312處的二側邊620,防止產生化學液體500的流場阻礙,提升晶圓600的整體清洗效果。Since the
需說明的是,雖然頂起平台410帶動複數晶圓600朝上移動特定距離D後,會使得各晶圓600的側邊620及側邊下方622脫離各晶舟凹槽312之限制,但因為各晶圓600的底部610在此時已被頂起平台410的複數頂起平台凹槽412所頂持,且複數頂起平台凹槽412對應於複數晶舟凹槽312的設置方式,也具有彼此等距設置的結構,如此一來,即便各晶圓600處於被頂起平台410驅動而進行昇降式的往復振盪的狀態,各晶圓600在往復振盪期間依舊不會產生相互碰撞的情況。It should be noted that although the
於本實施例中,複數晶圓600是沿一垂直方向插設於晶舟310所具有的複數晶舟凹槽312內,但並非以此做為限制。換言之,複數晶圓600也可先沿一水平方向插設於晶舟310所具有的複數晶舟凹槽312內,隨後利用升降機構300將晶舟310進行翻轉,使複數晶圓600處於垂直設置的方向後,再朝下浸入於浸泡槽200的化學液體500內。In this embodiment, the plurality of
此外,當晶舟310朝下方的浸泡槽200移動,使複數晶舟凹槽312所承載的複數晶圓600完全浸入化學液體500後,晶舟310的位置便將維持固定不動。換言之,在頂起平台410帶動複數晶圓600朝上移動特定距離D,且隨後驅動複數晶圓600進行往復振盪的期間,晶舟310皆呈現固定不動的狀態。In addition, when the
綜上所述,本發明之晶圓浸泡清洗裝置100在將複數晶圓600完全地浸入浸泡槽200的化學液體500內後,透過頂起平台410的作動,使複數晶圓600朝上移動特定距離D,藉此顯露出原本靠近晶舟凹槽312處的晶圓600的二側邊620。晶圓600的二側邊620露出於晶舟凹槽312後,振盪機構400驅動頂起平台410,使頂起平台410同步驅動複數晶圓600進行昇降式的往復振盪,讓化學液體500得以充分且完全地接觸原本靠近晶舟凹槽312處的晶圓600的二側邊620,從而提升晶圓600的清洗效果。To sum up, after the wafer
另一方面,由於本發明的振盪機構400是獨立於升降機構300設置,故振盪機構400於進行驅動步驟時,僅需考慮頂起平台410的重量與複數晶圓600的重量,其所需的驅動力道與現有技術中將晶舟同步進行昇降振盪的驅動力道相比,將得以更為縮減,從而對降低功耗與提高節能效果有所助益。On the other hand, since the
上述之實施例僅用來例舉本發明之實施態樣,以及闡釋本發明之技術特徵,並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利保護範圍應以申請專利範圍為準。The above-mentioned embodiments are only used to illustrate the implementation of the present invention and explain the technical features of the present invention, and are not used to limit the scope of protection of the present invention. Any changes or equivalence arrangements that can be easily accomplished by those familiar with the technology fall within the scope of the present invention, and the protection scope of the present invention should be based on the scope of the patent application.
100:晶圓浸泡清洗裝置 200:浸泡槽 210:底部 300:升降機構 310:晶舟 312:晶舟凹槽 400:振盪機構 410:頂起平台 412:頂起平台凹槽 500:化學液體 600:晶圓 610:底部 620:側邊 622:側邊下方 D:特定距離 100: Wafer immersion cleaning device 200: soak tank 210: bottom 300: lifting mechanism 310: crystal boat 312: crystal boat groove 400: Oscillating mechanism 410: Jack up the platform 412: Jack up platform groove 500: chemical liquid 600: Wafer 610: bottom 620: side 622: Below the side D: specific distance
圖1為本發明晶圓清洗裝置的立體圖。 圖2為本發明晶圓清洗裝置之升降機構所具有的晶舟完全浸入浸泡槽內之化學液體的示意圖。 圖3為本發明晶圓清洗裝置之振盪機構所具有的頂起平台頂持於晶圓之底部的立體圖。 圖4為本發明晶圓清洗裝置之振盪機構所具有的頂起平台頂持於晶圓之底部的前視圖。 圖5為本發明晶圓清洗裝置之振盪機構所具有的頂起平台朝上移動一特定距離以帶動晶圓朝上移動該特定距離的立體圖。 圖6為本發明晶圓清洗裝置之振盪機構所具有的頂起平台朝上移動一特定距離以帶動晶圓朝上移動該特定距離的前視圖。 FIG. 1 is a perspective view of a wafer cleaning device of the present invention. FIG. 2 is a schematic diagram of the wafer boat completely immersed in the chemical liquid in the immersion tank included in the lifting mechanism of the wafer cleaning device of the present invention. 3 is a perspective view of the lifting platform of the oscillating mechanism of the wafer cleaning device of the present invention supported on the bottom of the wafer. FIG. 4 is a front view of the lifting platform of the oscillating mechanism of the wafer cleaning device of the present invention supported on the bottom of the wafer. 5 is a perspective view of the jacking platform of the oscillation mechanism of the wafer cleaning device of the present invention moving upward for a specific distance to drive the wafer upward for the specific distance. 6 is a front view of the jacking platform of the oscillation mechanism of the wafer cleaning device of the present invention moving upward for a specific distance to drive the wafer upward for the specific distance.
100:晶圓浸泡清洗裝置 100: Wafer immersion cleaning device
200:浸泡槽 200: soak tank
210:底部 210: bottom
300:升降機構 300: lifting mechanism
310:晶舟 310: crystal boat
312:晶舟凹槽 312: crystal boat groove
400:振盪機構 400: Oscillating mechanism
410:頂起平台 410: Jack up the platform
412:頂起平台凹槽 412: Jack up platform groove
500:化學液體 500: chemical liquid
600:晶圓 600: Wafer
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200731386A (en) * | 2005-11-18 | 2007-08-16 | Tokyo Electron Ltd | Drying device, drying method, substrate treating device, substrate treating method and computer readable recording medium having program |
| TWM347663U (en) * | 2008-05-22 | 2008-12-21 | Scientech Corp | Wafer drying apparatus |
| TWM589894U (en) * | 2019-11-01 | 2020-01-21 | 弘塑科技股份有限公司 | Wafer wet processing station |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200731386A (en) * | 2005-11-18 | 2007-08-16 | Tokyo Electron Ltd | Drying device, drying method, substrate treating device, substrate treating method and computer readable recording medium having program |
| TWM347663U (en) * | 2008-05-22 | 2008-12-21 | Scientech Corp | Wafer drying apparatus |
| TWM589894U (en) * | 2019-11-01 | 2020-01-21 | 弘塑科技股份有限公司 | Wafer wet processing station |
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