TWI791580B - How to set the alignment pattern - Google Patents
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Abstract
[課題]提供一種對準圖案的設定方法,即使對準圖案不包含特徵部分,也可抑制對準精度的降低。 [解決手段]對準圖案的設定方法具備:拍攝包含晶圓的切割道的交叉部之圖像之拍攝步驟;在顯示有包含交叉部之圖像之裝置的操作畫面中,指定2個以上包含切割道與相異器件間的界線之區域之指定步驟;製作包含所有指定之區域之全體圖之全體圖製作步驟;在全體圖中,將指定之區域以外進行遮蓋之遮蓋步驟;將經過遮蓋之全體圖設定為對準圖案之設定步驟;及儲存對準圖案與切割道的寬度方向的中心間的距離之儲存步驟。[Problem] To provide a method of setting an alignment pattern that can suppress a decrease in alignment accuracy even if the alignment pattern does not include a characteristic portion. [Solution] The setting method of the alignment pattern includes: a step of capturing an image including the intersection of the dicing lines of the wafer; and specifying two or more images including the intersection on the operation screen of the device displaying the image including the intersection. The step of specifying the area of the boundary line between the dicing line and the different devices; the step of making the overall map including all the designated areas; the covering step of covering the area outside the designated area in the overall drawing; the covering step The overall image setting is a step of setting the alignment pattern; and a storage step of storing the distance between the alignment pattern and the center of the width direction of the scribe line.
Description
發明領域 本發明是關於一種對準圖案(alignment pattern)的設定方法,是在分割晶圓時,設定檢測加工位置時所使用之對準圖案。Field of the Invention The present invention relates to a setting method of an alignment pattern, which is an alignment pattern used for setting and detecting processing positions when a wafer is divided.
發明背景 將矽、藍寶石、鎵等作為母材之圓板狀的半導體晶圓或光器件晶圓等的晶圓,藉由正面的格子狀的分割預定線所區劃之複數個區域中,形成有器件。晶圓是藉由雷射加工裝置或切割裝置等的加工裝置,沿著分割預定線而被分割成一個個的器件(例如,參照專利文獻1)。Background of the Invention In wafers such as disc-shaped semiconductor wafers or optical device wafers, which use silicon, sapphire, gallium, etc. device. A wafer is divided into individual devices along planned dividing lines by a processing device such as a laser processing device or a dicing device (for example, refer to Patent Document 1).
專利文獻1等所示之加工裝置,是藉由全自動加工而分割前述之晶圓時,將預先設定之對準圖案,與拍攝了加工對象的晶圓之圖像,實施圖案匹配(pattern matching)等的圖像處理,而執行對於晶圓進行加工機構的位置整合之對準,並且執行判定加工機構所加工之加工位置是否適當之切口檢查(kerf check)。 先前技術文獻 專利文獻The processing apparatuses shown in Patent Document 1 etc. perform pattern matching on a preset alignment pattern and an image of a wafer to be processed when dividing the above-mentioned wafer by fully automatic processing. ) and other image processing, and perform alignment of the position integration of the processing mechanism for the wafer, and perform a kerf check (kerf check) to determine whether the processing position processed by the processing mechanism is appropriate. Prior Art Documents Patent Documents
專利文獻1:日本專利特開2014-203836號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-203836
發明概要 發明欲解決之課題 為了執行前述之對準及切口檢查,專利文獻1等所示之加工裝置的加工對象的晶圓在每個器件上形成有對準圖案,並且為了避免被誤認為是其他部分,對準圖案較佳的是包含其他部分沒有之特徵部分。SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In order to perform the above-mentioned alignment and kerf inspection, the wafer to be processed in the processing apparatus shown in Patent Document 1 etc. has an alignment pattern formed on each device, and in order to avoid being mistaken as a For other parts, the alignment pattern preferably includes features that are not found in other parts.
本發明是有鑑於此問題點而作成者,其目的在於提供一種對準圖案的設定方法,即使是對準圖案沒有包含特徵部分,也可抑制對準精度的降低。 用以解決課題之手段The present invention was made in view of this problem, and an object of the present invention is to provide a method for setting an alignment pattern that can suppress a decrease in alignment accuracy even if the alignment pattern does not include a characteristic portion. means to solve problems
為了解決上述課題並達成目的,本發明的對準圖案的設定方法,是將正面形成有藉由複數條切割道而被區劃成格子狀之器件之晶圓,沿著該切割道分割時,用以檢測該切割道的位置的對準圖案的設定方法,該對準圖案的設定方法之特徵在於具備:拍攝包含該切割道的交叉部之圖像之拍攝步驟;在顯示有包含該交叉部之圖像之裝置的操作畫面之中,指定至少2個以上包含該切割道與器件間的界線之區域之指定步驟;製作包含所有的指定區域之全體圖之全體圖製作步驟;在該全體圖中,將指定之區域以外進行遮蓋之遮蓋步驟;將被遮蓋之全體圖設定為對準圖案之設定步驟;及儲存該對準圖案的任一區域、與該切割道的寬度方向的中心間的距離之儲存步驟。In order to solve the above-mentioned problems and achieve the purpose, the setting method of the alignment pattern of the present invention is to divide the wafer with the devices partitioned into a lattice shape by a plurality of dicing lines on the front side, and use A method for setting an alignment pattern for detecting the position of the scribe line, characterized in that the method for setting the alignment pattern includes: a step of photographing an image including an intersection of the scribe line; In the operation screen of the image device, specifying at least two or more regions including the boundary between the scribe line and the device; the step of making a general diagram including all the designated regions; in the general diagram , the masking step of covering outside the designated area; the setting step of setting the covered overall image as the alignment pattern; and storing the distance between any area of the alignment pattern and the center of the width direction of the cutting line storage steps.
在前述對準圖案的設定方法中,其中該指定步驟也可將避開形成於該切割道之構件或是加工痕之位置,指定為該區域。In the method for setting the aforementioned alignment pattern, the specifying step may also specify a position avoiding the member or the processing mark formed in the scribe line as the region.
在前述對準圖案的設定方法中,其中該指定步驟也可藉由描繪顯示有包含該交叉部之圖像之裝置的操作畫面,來指定該區域。 發明效果In the method for setting the aforementioned alignment pattern, the specifying step may also specify the region by drawing and displaying an operation screen of a device including the image including the intersection. Invention effect
即使對準圖案不包含特徵部分,本發明的對準圖案的設定方法也可具有抑制對準精度的降低之效果。Even if the alignment pattern does not include a feature portion, the alignment pattern setting method of the present invention has an effect of suppressing a reduction in alignment accuracy.
用以實施發明之形態 針對用於實施本發明之形態(實施形態),參照圖式並且詳細地進行說明。本發明並非因以下實施形態所記載之內容而受到限定的發明。又,在以下所記載之構成要件中,包含所屬技術領域中具有通常知識者可輕易設想得到的或實質上是相同的。此外,以下所記載之構成是可適當組合的。又,在不脫離本發明之要旨的範圍內,可進行各種構成之省略、置換或變更。Modes for Carrying Out the Invention Modes for carrying out the present invention (embodiments) will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the components described below include those that can be easily imagined by those skilled in the art or are substantially the same. In addition, the configurations described below can be appropriately combined. In addition, omissions, substitutions, or changes of various configurations can be made without departing from the gist of the present invention.
[實施形態1] 依據圖式來說明本發明的實施形態1之對準圖案的設定方法。圖1是顯示實施實施形態1之對準圖案的設定方法的雷射加工裝置之構成例的立體圖。圖2是圖1所示之雷射加工裝置的加工對象之晶圓的立體圖。[Embodiment 1] A method of setting an alignment pattern according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a configuration example of a laser processing apparatus for carrying out a method of setting an alignment pattern according to Embodiment 1. FIG. FIG. 2 is a perspective view of a wafer to be processed by the laser processing apparatus shown in FIG. 1 .
實施形態1之對準圖案的設定方法是半導體製程等所使用之加工裝置在分割圖1及圖2所示之晶圓100時所實施之方法。加工裝置是藉由雷射加工而分割晶圓100之圖1所示的雷射加工裝置1、或者是切割晶圓100以進行分割之切割裝置。The alignment pattern setting method of Embodiment 1 is a method implemented when the
晶圓100是以矽、藍寶石、鎵等為母材之圓板狀的半導體晶圓與光器件晶圓。如圖2所示,晶圓100在正面101形成有被複數條切割道102區劃成格子狀的器件103。又,晶圓100在切割道102上形成有構件,即TEG (Test Element Group,測試元件群)104。TEG104是由金屬等所形成,並且是用以發現器件103的設計、製造上的問題的測試圖案。TEG104配置在晶圓100的切割道102的預先設定之規定位置上。The
又,在實施形態1中,雖然TEG104的配置位置與各個切割道102不同,但本發明之晶圓100也可具備與TEG104的配置位置相同之複數條切割道102。再者,圖2顯示了配置在部分的切割道102上之TEG104,省略了配置於其他切割道102上之TEG104。又,在實施形態1中,雖然晶圓100是在切割道102上形成構件,即TEG104,但本發明並不限定於TEG104,也可形成CMP (Chemical Mechanical Polishing,化學機械拋光)用的虛擬(dummy)圖案以作為構件。CMP的虛擬圖案是在CMP研磨時,為了均等地磨削晶圓100以抑制厚度的不一致,而在切割道102上形成圖案者,且圖案是由金屬、氧化膜或是樹脂等構成。又,在實施形態1中,晶圓100藉由將黏著膠帶110貼附在正面101的背面側的背面105上,並且將環狀框架111貼附在黏著膠帶110的外周上,而與環狀框架111成為一體。Also, in Embodiment 1, although the arrangement position of TEG 104 is different from that of each
如圖1所示,作為加工裝置的一例的雷射加工裝置1,具備:工作夾台10,藉由保持面11而吸引保持晶圓100,並且藉由旋轉驅動源而可繞軸心旋轉;雷射光線照射單元20,將對於保持在工作夾台10上之晶圓100具有吸收性之波長的雷射光線,照射在晶圓100上;圖未示之X軸移動單元,使工作夾台10在X軸方向上移動;及圖未示之Y軸移動單元,使工作夾台10在Y軸方向上移動。又,雷射加工裝置1具備:載置收納雷射加工前後的晶圓100之匣盒30,並且使匣盒30在Z軸方向上昇降之匣盒昇降部40;在匣盒30與工作夾台10之間搬送晶圓100之圖未示之搬送單元;拍攝保持在工作夾台10之晶圓100之拍攝單元50;及控制各構成要件之電腦,即控制單元60。As shown in FIG. 1 , a laser processing device 1 as an example of a processing device is provided with: a
雷射光線照射單元20具備加工頭21,前述加工頭21對保持在工作夾台10上的晶圓100相向,且照射雷射光線。拍攝單元50安裝在雷射光線照射單元20的加工頭21上。拍攝單元50具備將保持在工作夾台10之晶圓100的正面101進行攝影之CCD(Charge Coupled Device)拍攝元件等。拍攝單元50將拍攝而得之圖像輸出至控制單元60。The laser
控制單元60是分別控制雷射加工裝置1的上述之構成要件,並使雷射加工裝置1實施對晶圓100之加工動作的單元。再者,控制單元60是電腦。控制單元60具有運算處理裝置、儲存裝置及輸入輸出介面裝置,該運算處理裝置具有如CPU(central processing unit,中央處理單元,)的微處理器,該儲存裝置具有如ROM(read only memory,唯讀記憶體)或RAM(random access memory,隨機存取記憶體)之記憶體。The control unit 60 is a unit that individually controls the above-mentioned constituent elements of the laser processing apparatus 1 and causes the laser processing apparatus 1 to perform processing operations on the
控制單元60的運算處理裝置是依照儲存於儲存裝置中之電腦程式實施運算處理,並將用於控制雷射加工裝置1的控制訊號透過輸入輸出介面裝置輸出至雷射加工裝置1的上述之構成要件。又,控制單元60是與顯示單元70及輸入單元80相連接,前述顯示單元70是顯示加工動作的狀態或圖像等,前述輸入單元80是在操作人員登錄加工內容資訊等之時使用。The arithmetic processing device of the control unit 60 implements arithmetic processing according to the computer program stored in the storage device, and outputs the control signal for controlling the laser processing device 1 to the laser processing device 1 through the input and output interface device. essentials. In addition, the control unit 60 is connected to a
顯示單元70包含液晶顯示器(liquid crystal display)、有機EL顯示器(organic electro-luminescence display),或者是無機EL顯示器(Inorganic electro-luminescence display)等的顯示器件。顯示器件的畫面71即為操作畫面。顯示單元70將文字、圖像、記號及圖形等顯示於畫面內。又,顯示單元70顯示拍攝單元50拍攝而得之圖像。The
輸入單元80具備重疊在構成顯示單元70之顯示器件的畫面71上之觸控面板81,及鍵盤等的圖未示之外部輸入裝置。觸控面板81檢測手指、筆,或是觸控筆等的接觸或接近。觸控面板81可檢測複數個手指、筆或是觸控筆等接觸或是接近時的觸控面板81上的位置。在以下的說明中,將觸控面板81所檢測之複數個手指、筆及觸控筆等接觸或接近時之位置,表示為「檢測位置」。輸入單元80將手指等的接觸或接近及檢測位置輸出至控制單元60。The
雷射加工裝置1從雷射光線照射單元20的加工頭21照射雷射光線於晶圓100上,並且藉由X軸移動單元、旋轉驅動源及Y軸移動單元,而使工作夾台10與加工頭21沿著切割道102進行相對地移動並實施燒蝕加工,以在切割道102上形成雷射加工溝。在實施形態1中,將藉由雷射加工裝置1而在切割道102上形成有雷射加工溝之晶圓100,沿著雷射加工溝被切斷等,而分割成一個個的器件103。The laser processing device 1 irradiates laser light on the
又,在雷射加工裝置1中,控制單元60將拍攝單元50拍攝而得之圖像輸出至顯示單元70,並且顯示於顯示單元70上。在晶圓100的雷射加工前,控制單元60執行使晶圓100與加工頭21進行對位之對準,並且在晶圓100的雷射加工中執行切口檢查,前述切口檢查是用以判定是否可容許實際形成於切割道102之雷射加工溝的位置,及形成於雷射加工溝的寬度方向的兩側緣之碎片的大小。雷射加工裝置1在執行對準時,使控制單元60將預先儲存於儲存裝置之對準圖案200與拍攝單元50拍攝而得之圖像,實施圖案匹配等的圖像處理。In addition, in the laser processing device 1 , the control unit 60 outputs the image captured by the
接著,說明實施形態1之對準圖案的設定方法。圖3是顯示實施形態1之對準圖案的設定方法的流程之流程圖。圖4是顯示圖3所示之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。圖5是顯示在圖4所示之圖像中,實施圖3所示之對準圖案的設定方法的指定步驟之一例之圖式。圖6是將圖5所示之圖像的主要部分放大顯示之圖式。圖7是顯示在圖5所示之圖像中,實施圖3所示之對準圖案的設定方法的全體圖製作步驟之一例之圖式。圖8是顯示在圖7所示之圖像中,實施圖3所示之對準圖案的設定方法的遮蓋步驟之一例之圖式。圖9是顯示在對準圖案的設定方法的儲存步驟中所儲存之對準圖案與切割道間的距離等的一例之圖式。Next, the setting method of the alignment pattern of Embodiment 1 is demonstrated. Fig. 3 is a flow chart showing the flow of the alignment pattern setting method in the first embodiment. FIG. 4 is a diagram showing an example of an image obtained in an imaging step of the alignment pattern setting method shown in FIG. 3 . FIG. 5 is a diagram showing an example of a specified procedure for implementing the alignment pattern setting method shown in FIG. 3 on the image shown in FIG. 4 . Fig. 6 is an enlarged view showing a main part of the image shown in Fig. 5 . FIG. 7 is a diagram showing an example of an overall image creation procedure for implementing the alignment pattern setting method shown in FIG. 3 on the image shown in FIG. 5 . FIG. 8 is a diagram showing an example of a masking step for implementing the alignment pattern setting method shown in FIG. 3 on the image shown in FIG. 7 . 9 is a diagram showing an example of the distance between the alignment pattern and the scribe line and the like stored in the storage step of the alignment pattern setting method.
實施形態1之對準圖案的設定方法(以下,簡稱為設定方法),是在晶圓100的切割道102上形成雷射加工溝,並且將晶圓100沿著切割道102而分割成一個個的器件103時,設定用以檢測切割道102的位置的對準圖案200之方法。對準圖案200是一種當雷射加工裝置1的控制單元60檢測在切割道102上加工雷射加工溝之位置(座標資訊)(亦即,執行對準)時所使用的圖案匹配之圖像資訊,且是藉由實施形態1之設定方法而設定,並儲存在儲存裝置中。再者,在實施形態1中,位置(座標資訊)顯示了從晶圓100的預先設定之基準位置的X軸方向及Y軸方向的座標。The setting method of the alignment pattern of Embodiment 1 (hereinafter referred to simply as the setting method) is to form a laser processing groove on the
設定方法是首先操作員將收納與環狀框架111成為一體之晶圓100之匣盒30,載置於雷射加工裝置1的匣盒昇降部40上,然後,操作員操作輸入單元80,而將執行對準時拍攝單元50拍攝之晶圓100的正面101的位置登錄於控制單元60。再者,在實施形態1中,執行對準時拍攝之晶圓100的正面101的位置,是可拍攝各個切割道102交叉之交叉部106(如圖2所示)之位置。如圖3所示,設定方法具備拍攝步驟ST1、指定步驟ST2、全體圖製作步驟ST3、遮蓋步驟ST4、設定步驟ST5及儲存步驟ST6。The setting method is firstly that the operator places the
拍攝步驟ST1是拍攝包含晶圓100的切割道102的交叉部106之圖像300(如圖4所示)之步驟。在拍攝步驟ST1中,當操作員操作輸入單元80,並輸入對準圖案200的設定開始指示時,控制單元60在搬送單元中從匣盒30取出1片雷射加工前的晶圓100,並且載置於工作夾台10的保持面11上,而使晶圓100被吸引保持在工作夾台10的保持面11上。The photographing step ST1 is a step of photographing an image 300 (as shown in FIG. 4 ) including the
接著,控制單元60藉由X軸移動單元而使工作夾台10朝向雷射光線照射單元20的加工頭21的下方移動,並且使工作夾台10配置在安裝於加工頭21之拍攝單元50的下方且執行保持於工作夾台10之晶圓100的對準時所進行拍攝之位置上,使拍攝單元50拍攝晶圓100的正面101。如圖4所示,控制單元60將圖像300顯示於顯示單元70的操作畫面,即畫面71上,該圖像300包含拍攝單元50拍攝而得之晶圓100的正面101的切割道102的交叉部106。再者,由於圖像300是拍攝單元50拍攝而得之圖像,因此是以規定的灰階而顯示有光的強弱之圖像,亦即為具有濃淡之圖像。設定方法是當圖像300顯示於顯示單元70的畫面71時,則進入指定步驟ST2。Next, the control unit 60 uses the X-axis moving unit to move the work clamp table 10 toward the lower side of the
指定步驟ST2是在顯示有包含交叉部106之圖像300之裝置中,即顯示單元70的畫面71中,指定至少2個以上之區域400之步驟,區域400包含切割道102與相異器件103間的界線。實施形態中,在指定步驟ST2,操作員在顯示於顯示單元70的畫面71之圖像300中,使觸控筆90接觸並在區域400的外緣上移動,藉由觸控筆90進行描繪,前述區域400是包含切割道102與各器件103間之界線,且圍繞避開配置於切割道102之TEG104之位置。The specifying step ST2 is a step of specifying at least two or
在指定步驟ST2中,控制單元60從輸入單元80的觸控面板81的觸控筆90的檢測位置,來檢測觸控筆90在畫面71上移動之軌跡,以作為區域400的外緣的位置,並且儲存於儲存裝置中。再者,雖然在實施形態1中,指定步驟ST2中是以觸控筆90進行描繪,但本發明不限定於觸控筆90,也可以手指或是筆等來描繪。In specifying step ST2, the control unit 60 detects the track of the
再者,當控制單元60檢測並儲存區域400的外緣的位置時,輸入單元80的觸控面板81以顯示單元70的畫面71的像素(pixel)單位來檢測觸控筆90的位置,並將觸控面板81的觸控筆90的檢測位置的畫素數值化,例如為「1」,且將檢測位置以外之畫素數值化,例如為「0」。控制單元60從前述數值化之像素的位置,及在執行登錄後之對準時,拍攝單元50所拍攝之晶圓100的正面101的位置等,來計算區域400的外緣的位置,並且指定為區域400。又,在指定步驟ST2中,如圖5所示,控制單元60在顯示單元70的畫面71中,顯示所指定之區域400。又,實施形態1中,在指定步驟ST2雖然指定了4個區域400,但本發明並不限定於4個,只要指定2個以上的區域400即可。Moreover, when the control unit 60 detects and stores the position of the outer edge of the
再者,若區域400的外緣如圖6所示地而斷開,如圖6中的虛線所示,控制單元60將斷開的兩端401、402之間以通過最短的線來連結,來計算區域400的外緣的位置。如此,在指定步驟ST2中,操作員將包含顯示於顯示單元70的畫面71之圖像300的切割道102與器件103間的界線且避開配置於切割道102之TEG104的位置,指定為區域400,並至少指定2個以上之區域400。又,在指定步驟ST2中,操作員藉由觸控筆90描繪顯示有顯示單元70的圖像300之畫面71,來指定區域400。設定方法是當操作員操作輸入單元80,而輸入區域400的指定已結束之指令時,則進入全體圖製作步驟ST3。Furthermore, if the outer edge of the
全體圖製作步驟ST3是製作包含指定步驟ST2所指定之所有的區域400之全體圖500的步驟。在全體圖製作步驟ST3中,控制單元60計算在指定之各區域400的X軸方向及Y軸方向各自的座標中最大的座標與最小的座標。控制單元60計算在所有的區域400的X軸方向的複數個最大座標中的最大X軸方向座標501,及複數個最小座標中的最小X軸方向座標502,並且計算在所有的區域400的Y軸方向的複數個最大座標中的最大Y軸方向座標503,及複數個最小座標中的最小Y軸方向座標504。The overall map creating step ST3 is a step of creating an
控制單元60將最大X軸方向座標501、最小X軸方向座標502、最大Y軸方向座標503與最小Y軸方向座標504所圍繞之區域,製作成全體圖500。在全體圖製作步驟ST3中,如圖7所示,控制單元60將全體圖500顯示於顯示單元70的畫面71上。設定方法是當控制單元60製作全體圖500時,則進入遮蓋步驟ST4。The control unit 60 makes an
遮蓋步驟ST4是在全體圖500中,遮蓋指定之區域400以外的步驟。在遮蓋步驟ST4中,控制單元60將顯示於顯示單元70之全體圖500中的所有的區域400的外側,如圖8之網格所示,進行變黑之圖像處理,而形成遮罩510。亦即,在遮蓋步驟ST4中,控制單元60將全體圖500中的所有的區域400的外側,形成為遮罩510。再者,本發明在遮蓋步驟ST4中,控制單元60也可將顯示於顯示單元70之全體圖500中的所有的區域400的外側,進行變白之圖像處理,而形成遮罩510。設定方法是當控制單元60形成遮罩510時,則進入設定步驟ST5。The masking step ST4 is a step of masking other than the designated
設定步驟ST5是將形成有遮罩510之全體圖500,設定為對準圖案200的步驟。在設定步驟ST5中,控制單元60將包含以規定灰階的光的強弱所顯示之各區域400與遮罩510之全體圖500,設定為對準圖案200,並儲存於儲存裝置中。設定方法是當控制單元60儲存對準圖案200時,則進入儲存步驟ST6。The setting step ST5 is a step of setting the
儲存步驟ST6是儲存對準圖案200的任一區域400及與切割道102的寬度方向的中心107間的距離201(如圖9所示)之步驟。再者,本發明在儲存步驟ST6中,也可儲存任一區域400與切割道102的端部之間的距離,簡而言之,可儲存任一區域400與切割道102的任意位置間的距離。在儲存步驟ST6中,操作員操作輸入單元80,並且輸入對準圖案200的複數個區域400中的任一者與切割道102的寬度方向的中心107間的距離201,且控制單元60將輸入之距離201儲存於儲存裝置,並如圖9所示,在顯示單元70的畫面71上顯示切割道102的中心107。設定方法是當控制單元60儲存距離201時則結束。The storing step ST6 is a step of storing any
如上所述,設定有對準圖案200之雷射加工裝置1的控制單元60,在執行對準時,使拍攝單元50拍攝在晶圓100的正面101中的預先登錄之對準執行時所拍攝的位置。控制單元60在執行對準時,在拍攝單元50所拍攝而得之圖像、及對準圖案200的區域400的圖像,實施圖案匹配等的圖像處理。控制單元60基於圖像處理的結果,從拍攝單元50拍攝而得之圖像等,來算出切割道102的位置。As described above, the control unit 60 of the laser processing apparatus 1 with the
控制單元60使工作夾台10繞著軸心旋轉,而使互相正交之切割道102中的一者與X軸方向平行,並且使晶圓100與雷射光線照射單元20的加工頭21進行對位,而使雷射光線從區域400照射在成為儲存步驟ST6所儲存之距離201之位置上。然後,控制單元60令旋轉驅動源將晶圓100繞著軸心旋轉90度,且使互相正交之切割道102中的另一者的對準與其中一者同樣地被執行。然後,控制單元60根據加工條件,並藉由X軸移動單元、Y軸移動單元與旋轉驅動源,使雷射光線照射單元20的加工頭21與晶圓100沿著切割道102進行相對地移動,而在切割道102上形成雷射加工溝。The control unit 60 rotates the work clamp table 10 around the axis, so that one of the mutually
在實施形態1之設定方法是在指定步驟ST2中指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法會將包含複數條切割道102與器件103間的界線之區域400,包含在對準圖案200中。其結果為,由於設定方法可使用複數個包含複數條切割道102與器件103間的界線之區域400來進行對準,因此即使區域400,即對準圖案200不包含特徵部分,也可抑制對準精度的降低。The setting method in Embodiment 1 is to designate four
又,實施形態1之設定方法是在指定步驟ST2中,將避開配設在切割道102之TEG104的位置指定為區域400,並且在遮蓋步驟ST4中,將全體圖500的區域400的外側形成為遮罩510。因此,可抑制設定方法所設定之對準圖案200包含配設於切割道102上的TEG104。其結果為,由於設定方法是可抑制對準圖案200包含反射光之TEG104,因此可抑制對準精度的降低。In addition, in the setting method of Embodiment 1, in the specifying step ST2, a position avoiding the
又,在實施形態1之設定方法中,由於藉由描繪顯示單元70的畫面71來指定區域400,因此可輕易地指定區域400,並且可輕易地設定對準圖案200。Also, in the setting method of the first embodiment, since the
[實施形態2] 依據圖式來說明本發明的實施形態2之對準圖案的設定方法。圖10是顯示實施形態2之對準圖案的設定方法的指定步驟的圖像的一例之圖式。圖11是顯示實施實施形態2之對準圖案的設定方法的指定步驟後的圖像的一例之圖式。再者,圖10及圖11是對與實施形態1相同的部分附加相同的符號且省略說明。[Embodiment 2] A method of setting an alignment pattern according to Embodiment 2 of the present invention will be described with reference to the drawings. Fig. 10 is a diagram showing an example of an image showing a designated step in the method of setting an alignment pattern according to the second embodiment. Fig. 11 is a diagram showing an example of an image after carrying out a designated step in the setting method of the alignment pattern according to the second embodiment. In addition, in Fig. 10 and Fig. 11, the same reference numerals are assigned to the same parts as those in the first embodiment, and description thereof will be omitted.
實施形態2之對準圖案的設定方法(以下,簡稱為設定方法),除了指定步驟ST2與實施形態1不同之外,其他與實施形態1的設定方法是相同的。The setting method of the alignment pattern of the second embodiment (hereinafter, simply referred to as the setting method) is the same as the setting method of the first embodiment except that the specifying step ST2 is different from that of the first embodiment.
在實施形態2之設定方法的指定步驟ST2中,如圖10所示,控制單元60在顯示單元70的畫面71所顯示之圖像300內,顯示指定區域600,並且依照操作員從輸入單元80的操作,而使指定區域600在圖像300上移動。當操作員從輸入單元80輸入決定指定區域600的位置的操作時,如圖11所示,控制單元60將決定後之指定區域600,與實施形態1同樣地指定為前述之區域400(計算外緣的位置並儲存)。再者,在實施形態2中,雖然指定區域600的平面形狀為矩形,且圖像300上僅顯示指定區域600的各個角部601,但在本發明中,指定區域600的形狀及顯示方法並不限定於實施形態2所示者。In the specifying step ST2 of the setting method of Embodiment 2, as shown in FIG. operation to move the designated
實施形態2之設定方法是在指定步驟ST2中,指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法會是將包含複數條切割道102與器件103間的界線之複數個區域400,包含在對準圖案200中,並且與實施形態1同樣地,即使區域400,即對準圖案200不包含特徵部分,也可抑制對準精度的降低。The setting method of Embodiment 2 is to designate four
[實施形態3] 依據圖式來說明本發明的實施形態3之對準圖案的設定方法。圖12是顯示實施形態3之對準圖案的設定方法在拍攝步驟所得到之圖像的一例的圖式。圖13是顯示在實施形態3之對準圖案的設定方法的拍攝步驟所得到之圖像中,實施指定步驟後之一例之圖式。再者,圖12及圖13,是對與實施形態1相同的部分附加相同的符號且省略說明。[Embodiment 3] A method of setting an alignment pattern according to Embodiment 3 of the present invention will be described with reference to the drawings. Fig. 12 is a diagram showing an example of an image obtained in a photographing step of the alignment pattern setting method according to the third embodiment. Fig. 13 is a diagram showing an example after carrying out a predetermined step in the image obtained in the imaging step of the alignment pattern setting method according to the third embodiment. In addition, in Fig. 12 and Fig. 13, the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
如圖12所示,實施形態3之對準圖案的設定方法(以下,簡稱為設定方法),除了在晶圓100的各切割道102上配置有作為加工痕即雷射刻槽(laser grooving)痕之外,其他與實施形態1的設定方法相同。在晶圓100的正面101上形成有低介電值絕緣體被膜(Low-k膜)之情況下,為了抑制因切割加工而低介電值絕緣體被膜剝離等,而在各切割道102的寬度方向的兩端分別形成雷射刻槽痕108。雷射刻槽痕108是在各切割道102的寬度方向的兩端上,施行利用雷射光線之燒蝕加工,而形成為與切割道102平行之所謂雷射加工溝。再者,低介電值絕緣體被膜是由如SiOF或是BSG(SiOB)的無機物系的膜、與聚醯亞胺(polyimide)系或是聚對二甲苯(parylene)系等的聚合物膜,即有機物系的膜而構成。As shown in FIG. 12 , the setting method of the alignment pattern of Embodiment 3 (hereinafter referred to simply as the setting method), except that laser grooving (laser grooving) is arranged on each dicing
在實施形態3之設定方法的指定步驟ST2中,操作員以觸控筆90描繪區域400的外緣,且控制單元60計算區域400的外緣的位置,而指定為區域400,前述區域400是如下的位置:包含顯示於顯示單元70的畫面71之圖像300的切割道102與各器件103間的界線,且圍繞避開配置於切割道102上之TEG104及雷射刻槽痕108。又,在指定步驟ST2中,如圖13所示,控制單元60在顯示單元70的畫面71中顯示被指定之區域400。如此一來,雖然在實施形態3之設定方法的指定步驟ST2中,將避開TEG104及雷射刻槽痕108之位置指定為區域400,但本發明在切割道102上未配置TEG104,而僅配置有雷射刻槽痕108之情況下,在指定步驟ST2中,宜將避開雷射刻槽痕108之位置指定為區域400。亦即,本發明是在指定步驟ST2中,將避開TEG104或CMP用的虛擬圖案等的構件,與加工痕之雷射刻槽痕108的至少一者之位置,指定為區域400。In the designation step ST2 of the setting method of Embodiment 3, the operator draws the outer edge of the
實施形態3之設定方法是在指定步驟ST2中,指定4個包含切割道102與相異器件103間的界線之區域400。因此,設定方法與實施形態1同樣地,即使區域400即對準圖案200不包含特徵部分,也可抑制對準精度的降低。The setting method of the third embodiment is to designate four
又,實施形態3之設定方法是在指定步驟ST2中,將避開配設於切割道102之TEG104及雷射刻槽痕108之位置指定為區域400。其結果為,設定方法可抑制對準圖案200包含反射光之TEG104及雷射刻槽痕108,因此可抑制對準精度的降低。Also, in the setting method of the third embodiment, in the specifying step ST2, a position avoiding the
再者,本發明並不受限於上述實施形態。亦即,在不脫離本發明的主旨的範圍內可進行各種變形而實施。再者,在前述之實施形態1及實施形態2中,雖然揭露了以雷射加工裝置1作為加工裝置的一例,但本發明的對準圖案的設定方法也可用於切割裝置中。In addition, this invention is not limited to the said embodiment. That is, various deformation|transformation can be added and implemented in the range which does not deviate from the summary of this invention. Furthermore, in the above-mentioned Embodiment 1 and Embodiment 2, although the laser processing device 1 was disclosed as an example of the processing device, the setting method of the alignment pattern of the present invention can also be used in a cutting device.
1‧‧‧雷射加工裝置10‧‧‧工作夾台11‧‧‧保持面100‧‧‧晶圓101‧‧‧正面102‧‧‧切割道103‧‧‧器件104‧‧‧TEG(構件)105‧‧‧背面106‧‧‧交叉部107‧‧‧中心108‧‧‧雷射刻槽痕110‧‧‧黏著膠帶111‧‧‧環狀框架20‧‧‧雷射光線照射單元21‧‧‧加工頭200‧‧‧對準圖案201‧‧‧距離30‧‧‧匣盒300‧‧‧圖像40‧‧‧匣盒昇降部400‧‧‧區域401、402‧‧‧兩端50‧‧‧拍攝單元500‧‧‧全體圖501‧‧‧最大X軸方向座標502‧‧‧最小X軸方向座標503‧‧‧最大Y軸方向座標504‧‧‧最小Y軸方向座標510‧‧‧遮罩60‧‧‧控制單元600‧‧‧指定區域601‧‧‧角部70‧‧‧顯示單元(裝置)71‧‧‧畫面(操作畫面)80‧‧‧輸入單元81‧‧‧觸控面板90‧‧‧觸控筆X、Y、Z‧‧‧方向ST1‧‧‧拍攝步驟ST2‧‧‧指定步驟ST3‧‧‧全體圖製作步驟ST4‧‧‧遮蓋步驟ST5‧‧‧設定步驟ST6‧‧‧儲存步驟1‧‧‧
圖1是顯示實施實施形態1之對準圖案的設定方法之雷射加工裝置的構成例之立體圖。 圖2是圖1所示之雷射加工裝置的加工對象的晶圓的立體圖。 圖3是顯示實施形態1之對準圖案的設定方法的流程之流程圖。 圖4是顯示在圖3所示之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。 圖5是顯示在圖4所示之圖像實施了圖3所示之對準圖案的設定方法的指定步驟之一例之圖式。 圖6是顯示將圖5所示之圖像的主要部分放大之圖式。 圖7是顯示在圖5所示之圖像實施了圖3所示之對準圖案的設定方法的全體圖製作步驟之一例之圖式。 圖8是顯示在圖7所示之圖像實施了圖3所示之對準圖案的設定方法的遮蓋步驟之一例之圖式。 圖9是顯示在對準圖案的設定方法的儲存步驟中所儲存之對準圖案與切割道間的距離等的一例之圖式。 圖10是顯示實施形態2之對準圖案的設定方法的指定步驟的圖像的一例之圖式。 圖11是顯示實施實施形態2之對準圖案的設定方法的指定步驟後的圖像的一例之圖式。 圖12是顯示在實施形態3之對準圖案的設定方法的拍攝步驟中所得到之圖像的一例之圖式。 圖13是顯示在實施形態3之對準圖案的設定方法的拍攝步驟中所得到之圖像,實施指定步驟後之一例之圖式。FIG. 1 is a perspective view showing a configuration example of a laser processing apparatus for carrying out a method of setting an alignment pattern according to Embodiment 1. FIG. FIG. 2 is a perspective view of a wafer to be processed by the laser processing apparatus shown in FIG. 1 . Fig. 3 is a flow chart showing the flow of the alignment pattern setting method in the first embodiment. FIG. 4 is a diagram showing an example of an image obtained in an imaging step of the alignment pattern setting method shown in FIG. 3 . FIG. 5 is a diagram showing an example of specifying steps in which the alignment pattern setting method shown in FIG. 3 is implemented on the image shown in FIG. 4 . FIG. 6 is a diagram showing an enlarged main part of the image shown in FIG. 5 . FIG. 7 is a diagram showing an example of an overall image creation procedure in which the alignment pattern setting method shown in FIG. 3 is implemented on the image shown in FIG. 5 . FIG. 8 is a diagram showing an example of a masking step in which the alignment pattern setting method shown in FIG. 3 is implemented on the image shown in FIG. 7 . 9 is a diagram showing an example of the distance between the alignment pattern and the scribe line and the like stored in the storage step of the alignment pattern setting method. Fig. 10 is a diagram showing an example of an image showing a designated step in the method of setting an alignment pattern according to the second embodiment. Fig. 11 is a diagram showing an example of an image after carrying out a designated step in the setting method of the alignment pattern according to the second embodiment. Fig. 12 is a diagram showing an example of an image obtained in the imaging step of the alignment pattern setting method according to the third embodiment. Fig. 13 is a diagram showing an example of an image obtained in the imaging step of the method for setting the alignment pattern according to the third embodiment, after carrying out a predetermined step.
ST1‧‧‧拍攝步驟 ST1‧‧‧Shooting steps
ST2‧‧‧指定步驟 ST2‧‧‧designated steps
ST3‧‧‧全體圖製作步驟 ST3‧‧‧Overall drawing making steps
ST4‧‧‧遮蓋步驟 ST4‧‧‧covering steps
ST5‧‧‧設定步驟 ST5‧‧‧Setting steps
ST6‧‧‧儲存步驟 ST6‧‧‧Store steps
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| JPS60244803A (en) * | 1984-05-21 | 1985-12-04 | Disco Abrasive Sys Ltd | Automatic precise positioning system |
| JP2008112882A (en) * | 2006-10-31 | 2008-05-15 | Okayama Univ | Defect detection method and apparatus for cream solder printing |
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| JPS60244803A (en) * | 1984-05-21 | 1985-12-04 | Disco Abrasive Sys Ltd | Automatic precise positioning system |
| JP2008112882A (en) * | 2006-10-31 | 2008-05-15 | Okayama Univ | Defect detection method and apparatus for cream solder printing |
| JP2014203836A (en) * | 2013-04-01 | 2014-10-27 | 株式会社ディスコ | Target pattern setting method, and key pattern detection method |
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