TWI790462B - Plasma treatment device and method including adjustable lifting thimble assembly - Google Patents

Abstract

The invention discloses a plasma processing device with an adjustable lifting thimble assembly and a method thereof, which comprises: a vacuum reaction chamber, the vacuum reaction chamber contains a configuration plate, and an electrostatic chamber for placing wafers to be processed is arranged above the configuration plate. The chuck, configuration tray and electrostatic chuck are all provided with a plurality of through holes. Each through hole on the configuration tray and the corresponding through hole on the electrostatic chuck form a vertical guiding channel, and a plurality of lifting thimble assemblies pass through the corresponding through holes respectively. The guide channel is used to pick and place the wafer. The lifting thimble assembly includes: the lifting thimble structure and the central axis of the lifting thimble bellows. The lifting thimble structure and the central axis of the lifting thimble bellows are connected through threads. Its advantages are: through the improvement of the lifting thimble assembly, the height adjustment method of the lifting thimble structure is more convenient, and the adjustment process can be completed without dismantling many components of the plasma treatment device, which improves the working efficiency and reduces the electric current. Dismantling loss of pulp processing unit.

Description

A plasma treatment device and method including an adjustable lifting thimble assembly

The invention relates to the technical field of microelectronic processing and the field of plasma processing device and substrate adjustment thereof, in particular to a plasma processing device with an adjustable lifting thimble assembly and a method thereof.

At present, plasma etching, physical vapor deposition, chemical vapor deposition and other process methods are often used to micro-process semiconductor process components or substrates, such as manufacturing flexible display screens, flat panel displays, light-emitting diodes, solar cells, etc. The different steps of microfabrication can include plasma-assisted processing, which is typically performed in a vacuum chamber. In order to ensure the uniformity of the wafer during the process, it is necessary to ensure that the wafer is placed horizontally. In addition, it is also necessary to ensure the cleanliness of the vacuum reaction chamber to prevent contamination of the wafer sample.

In the plasma processing device, the traditional carrier is an electrostatic chuck, which uses electrostatic force to clamp or fix the wafer during the plasma processing process. An electrostatic chuck of opposite polarity is generated between the electrostatic chuck and the wafer, resulting in an electrostatic clamping force.

A traditional plasma processing device generally includes: a vacuum reaction chamber 101, which contains a configuration plate 102 (facility plate) for supporting the wafer, and the configuration plate 102 contains an electrostatic clamp for placing the wafer to be processed The disk 104, the configuration disk 102 and the electrostatic chuck 104 are all provided with a plurality of through holes, each through hole on the configuration disk 102 and each corresponding through hole on the electrostatic chuck 104 form a vertical guide channel 105, and the lifting thimble assembly 106 Contacts the wafer through the guide channel 105 . Each lifting thimble assembly 106 includes a lifting thimble 1061 and a lifting thimble bellows central shaft 1062. The lower part of the lifting thimble 1061 is embedded in the upper part of the lifting thimble bellows 1062. The lifting thimble 1061 is mainly fixed on the lifting thimble by an O-ring 107. Bellows central axis 1062 to achieve a fixed connection.

The commonly used lifting thimble assembly 106 and its matching components are generally composed of a plurality of parts, which have more installation tolerances and are more complicated in structure. Usually the lifting thimble 1061 is fixed by the O-ring 107, and the vertical height cannot be adjusted directly.

If it is necessary to adjust the height of the lifting thimble 1061, only the electrostatic chuck 104 and the configuration plate 102 can be removed, which is very troublesome. Multiple disassembly will also affect the service life of the device, and particles may be brought in during the adjustment, which is easy to cause Particle deposition affects the chamber environment of the device, and it cannot be guaranteed that the tops of all lifting thimbles 1061 are at the same height after reinstalling the electrostatic chuck 104, and it is difficult to ensure the verticality of the adjusted lifting thimbles 1061 and the distance between parts. Flatness results in low assembly accuracy, which brings inconvenience to the maintenance and use of plasma treatment equipment.

The object of the present invention is to provide a plasma treatment device and method including an adjustable lifting thimble assembly. Through the improvement of the lifting thimble assembly, the device makes the height adjustment of the lifting thimble structure more convenient and does not need to disassemble the plasma processing device. The adjustment process can be completed with more parts, the working efficiency is improved, and the disassembly loss of the plasma treatment device is reduced.

In order to achieve the above object, the present invention is achieved through the following technical solutions: a plasma processing device containing an adjustable lifting thimble assembly, the device includes: a vacuum reaction chamber, a configuration plate is included in the vacuum reaction chamber, a The electrostatic chuck on which the wafer to be processed is placed, the configuration tray and the electrostatic chuck are provided with a plurality of through holes, and each through hole on the configuration tray and each corresponding through hole on the electrostatic chuck form a vertical guiding channel, and the plurality of The lifting thimble assembly passes through the corresponding guide channel to realize the pick-and-place of the wafer. The lifting thimble assembly includes: the lifting thimble structure and the central axis of the lifting thimble bellows. The lifting thimble structure and the central axis of the lifting thimble bellows are connected through threads. So that the elevating thimble structure can utilize rotation to adjust its own height.

Preferably, a hollow groove is provided on the central axis of the bellows of the lifting thimble, and a thread structure is provided on the side wall of the hollow groove, which is connected with the structure of the lifting thimble through threads. The structure of the lifting thimble includes: a lifting thimble with a thread structure at the end, and The hollow groove of the central axis of the bellows matches.

Preferably, a hollow groove is provided on the central axis of the bellows of the lifting thimble, and a thread structure is provided on the side wall of the hollow groove, which is connected with the structure of the lifting thimble through threads. The structure of the lifting thimble includes: a lifting thimble and an external thread structure The sleeve, the lifting thimble is embedded in the threaded sleeve, and the threaded sleeve matches the hollow groove of the central axis of the bellows of the lifting thimble.

Preferably, the lifting thimble is made of ceramic material or metal material.

Preferably, there are three lifting thimble assemblies, which are distributed in isosceles triangles in each corresponding guide channel formed by the electrostatic chuck and the configuration plate.

Preferably, the lifting thimble assembly further includes: an elastic body, the elastic body is placed under the lifting thimble structure, the upper end of the elastic body is in contact with the bottom of the lifting thimble structure, and the lower end of the elastic body is in contact with the hollow groove of the central axis of the lifting thimble bellows The bottom contact of the elastic body can provide a rebound force for the lifting thimble structure.

Preferably, the elastic body is an elastic material or a spring device, and the radius of the spring device is smaller than the radius of the bottom of the elevating thimble structure.

Preferably, at least one air hole structure is opened on the side wall of the hollow groove of the central axis of the bellows of the lifting thimble.

Preferably, there is a gap between the lifting thimble assembly and the side wall of the guide channel, and the lifting thimble assembly further includes: a supporting tool, which can be inserted into the guiding channel to rotate the lifting thimble structure.

Preferably, a method for adjusting the height of a lifting thimble structure using a plasma treatment device including an adjustable lifting thimble assembly, the method includes the following steps: S1. Install the lifting thimble structure into the through hole of the configuration plate; S2. Using the configuration plate as a height measuring device, compare the height of the top position of each lifting thimble structure with the upper end position of the configuration plate to determine whether each lifting thimble structure is level; S3. When there is a lifting thimble structure to be adjusted that is not flush with the upper end of the configuration plate, adjust the lifting thimble structure to rise or fall by rotating the lifting thimble structure to be adjusted until the height difference between the lifting thimble structure to be adjusted and the configuration plate It is the same as the height difference between other lifting thimble structures and the configuration plate, and finally makes the height of each lifting thimble structure consistent; S4. Install the electrostatic chuck so that each through-hole of the electrostatic chuck and each through-hole of the configuration plate respectively form guide channels.

Preferably, it further includes: S5, using the electrostatic chuck as a height measuring device, comparing the height of the top position of each lifting thimble structure with the upper end position of the electrostatic chuck, and judging whether each lifting thimble structure is level; S6. When there is a lifting thimble structure to be adjusted that is not flush with the upper end of the electrostatic chuck, The top position of the lifting thimble structure to be adjusted is located in the guide channel, and the supporting tool is inserted into the guiding channel, and the supporting tool is used to drive the lifting thimble structure to be adjusted to rotate, so as to adjust the lifting thimble structure to rise or fall until the lifting thimble to be adjusted The height difference between the structure and the electrostatic chuck is the same as the height difference between other lift pin structures and the electrostatic chuck, and finally the height of each lift pin structure is consistent; Alternatively, the top position of the lifting thimble structure to be adjusted is located above the upper end of the electrostatic chuck, and the lifting or lowering of the lifting thimble structure is adjusted by rotating the lifting thimble structure to be adjusted until the height difference between the lifting thimble structure to be adjusted and the electrostatic chuck It is the same as the height difference between other lift pin structures and the electrostatic chuck, and finally makes the height of each lift pin structure consistent.

Compared with the prior art, the present invention has the following advantages:

(1) The plasma treatment device with adjustable lifting thimble assembly of the present invention, through the improvement of the lifting thimble assembly, makes the height adjustment method of the lifting thimble structure more convenient, and does not need to disassemble more components of the plasma processing device. Complete the adjustment process, realize the precise adjustment of the height of the lifting thimble structure, improve the working efficiency, and reduce the disassembly loss of the plasma treatment device;

(2) The plasma processing device including the adjustable lifting thimble assembly of the present invention adopts an elastomer structure, which makes the connection between the lifting thimble structure and the central axis of the lifting thimble bellows more tightly, and ensures the stability of the lifting thimble structure;

(3) In the plasma processing device with adjustable lifting thimble assembly of the present invention, for the lifting thimble that is not suitable for thread processing, it is combined with the threaded sleeve so that it can be closely connected with the central axis of the bellows of the lifting thimble, which expands the lifting capacity. The selection range of thimble;

(4) The plasma processing device containing the adjustable lifting thimble assembly of the present invention further includes a supporting device, so that when the top position of the lifting thimble assembly is located in the guide channel, the lifting thimble structure can be completed without removing the electrostatic chuck. The height adjustment improves the debugging efficiency of the staff, and the adjustment process can be completed without dismantling more components, which increases the service life of the plasma processing device and further prevents the chamber environment of the vacuum reaction chamber from being polluted.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts fall within the protection scope of the present invention.

It should be noted that, in this document, the terms "comprising", "comprising", "having" or any other variant thereof are intended to cover a non-exclusive inclusion such that a process, method, article or terminal device comprising a series of elements Include not only those elements, but further include other elements not expressly listed, or further include elements inherent in such process, method, article or terminal equipment. Without further limitations, an element defined by a statement "comprising..." or "comprising..." does not exclude the further presence of additional elements in the process, method, article or terminal device comprising said element.

It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used to facilitate and clearly illustrate an embodiment of the present invention.

Embodiment one

As shown in Figure 2, it is a schematic diagram of a partial component (lifting thimble assembly 206) of a plasma processing device containing an adjustable lifting thimble assembly of the present invention. The plasma processing device includes: a vacuum reaction chamber, and a vacuum reaction chamber contains a A configuration plate 202 (facility plate), a radio frequency power source is connected and supplies radio frequency power to the configuration plate 202 , and an electrostatic chuck 204 for placing wafers to be processed is arranged above the configuration plate 202 . A vacuum pump for vacuuming is connected below the vacuum reaction chamber, and an opening for transferring the wafer between the inside and outside of the reaction chamber is provided on the side wall of the vacuum reaction chamber. The vacuum reaction chamber includes a side wall of the reaction chamber made of metal materials. A gas spray device is arranged above the side wall of the reaction chamber. The gas spray device is connected to the gas supply device. The reaction gas in the gas supply device enters the vacuum reaction chamber through the gas spray device. .

Both the configuration tray 202 and the electrostatic chuck 204 are provided with a plurality of through holes, and each through hole on the configuration tray 202 forms a vertical guide channel 205 with each corresponding through hole on the electrostatic chuck 204, and the plurality of lifting thimble assemblies 206 are respectively Contact the wafer through the corresponding guide channel 205 (one lift pin assembly 206 passes through one guide channel 205 ), and there is a gap between the lift pin assembly 206 and the side wall of the guide channel 205 .

The lifting thimble assembly 206 is connected with the adjustment bracket, and the other end of the adjustment bracket is connected with the air cylinder. When the height of the lifting thimble assembly 206 needs to be adjusted, the cylinder pushes the adjustment bracket to move, and the adjustment bracket drives the lifting thimble assembly 206 to move to adjust the height.

In order to ensure that the lifting force of the lifting pin assembly 206 to lift the wafer is evenly distributed, the plasma processing device of this embodiment includes three lifting pin assemblies 206, which are distributed in an isosceles triangle on the surface formed by the electrostatic chuck 204 and the configuration plate 202. In each corresponding guide channel 205, but the lifting ejector pin assembly 206 of the present invention is not limited to three, and can be other numbers, as long as the number can achieve the purpose of evenly lifting the wafer, there is no limit to this.

Lifting thimble assembly 206 includes: lifting thimble structure 2061 and lifting thimble bellows central axis 2062, lifting thimble structure 2061 and lifting thimble bellows central axis 2062 are connected through threads, lifting thimble structure 2061 can use rotation to adjust its height, lifting thimble bellows The central shaft 2062 is connected with the adjustment bracket, and the movement of the adjustment bracket can drive the central shaft 2062 of the bellows of the lifting thimble to move. After the wafer processing is completed, the cylinder in the plasma processing device synchronously pushes each adjustment bracket to drive the lifting thimble bellows central axis 2062 corresponding to the adjustment bracket to move upward, and the upward movement of the lifting thimble bellows central axis 2062 will also drive the lifting thimble The structure 2061 rises along the guide channel 205 , and the top of the lift pin structure 2061 contacts the wafer and lifts the wafer up.

In this embodiment, a hollow groove is provided at the top of the bellows 2062 of the lifting thimble, and a threaded structure is provided on the side wall of the hollow groove, which is connected to the lifting thimble structure 2061 through threads.

Among them, the lifting thimble structure 2061 is a lifting thimble with a threaded structure at the end. The lifting thimble is inserted into the hollow groove of the central shaft 2062 of the bellows of the lifting thimble and connected with it by threads, so that the electrostatic chuck 204 can be rotated without dismantling the lifting thimble. Adjust the height (when the top position of the lifting thimble structure 2061 is above the upper end surface of the electrostatic chuck). The lifting thimble of the present invention can be made of ceramic material or metal, preferably, the lifting thimble is made of ceramic material.

The plasma processing device of the present invention further includes supporting tools. Because there is a gap between the lifting thimble assembly 206 and the side wall of the guide channel 205, when the top position of the lifting thimble structure 2061 is located in the guide channel 205, the supporting tool can extend into the guide channel Rotate the lifting thimble structure 2061 in 205, so that the lifting thimble structure 2061 can be rotated without removing the electrostatic chuck 204, so as to complete the height adjustment process of the lifting thimble structure 2061. Through the setting of the supporting tool, it is not necessary to dismantle the electrostatic chuck 204 when adjusting the lifting thimble structure 2061, which reduces the disassembly loss of the plasma processing device and increases the service life of the device.

In order to ensure the stability of the lifting thimble assembly 206, the lifting thimble assembly 206 of the present invention further includes an elastic body 2063, which is made of elastic and stretchable material. The elastic body 2063 is placed below the lifting thimble, the upper end surface of the elastic body 2063 is in contact with the bottom of the lifting thimble, and the lower end surface of the elastic body 2063 is in contact with the bottom of the hollow groove of the central shaft 2062 of the lifting thimble bellows. The lifting thimble squeezes the elastic body 2063 below to obtain an upward rebound force, and the rebound force can ensure that the lifting thimble and the side wall of the hollow groove of the central shaft 2062 of the bellows 2062 of the lifting thimble are close to each other, so that the connection between the two is tighter. It should be noted that after the height of the lifting thimble is installed and adjusted, the elastic body 2063 is always in a compressed state.

An electrostatic chuck 204, an intermediate flange 2021, a configuration plate 202, and a bellows 209 are arranged on the outside of the central axis 2062 of the lifting thimble bellows from top to bottom. 2062 sealing connection, the middle flange 2021 is placed in the configuration plate 202, and its upper end surface and the lower end surface of the electrostatic chuck 204 are sealed through the sealing ring. The lower end surface of the configuration plate 202 is sealed through the sealing ring. The middle flange 2021 puts the upper end and the lower end of the bellows central axis 2062 of the lifting thimble respectively in the electrostatic chuck 204 and the configuration plate 202 of the guide channel 205, that is, in the gas environment and the atmospheric environment of the vacuum reaction chamber, respectively. .

In order to ensure that the gas environment in the vacuum reaction chamber of the plasma processing device is not polluted when the wafer is working, at least one air hole structure 2064 is opened on the side wall of the hollow groove of the central shaft 2062 of the lifting thimble bellows. When the reaction chamber is evacuated, the hollow groove is also in a vacuum environment, which prevents the environment of the vacuum reaction chamber from being polluted. Preferably, the hollow groove is provided with an air hole structure 2064 .

When the plasma treatment device of this embodiment is installed and debugged, the following method steps can be used to adjust the height of the lifting thimble structure 2061:

S1. Install the lifting thimble structure 2061 into the through hole of the configuration plate 202;

S2. Using the configuration plate 202 as a height measuring device, compare the height of the top position of each lifting thimble structure 2061 with the upper end position of the configuration plate 202, and judge whether each lifting thimble structure 2061 is flush;

S3. When there is a lifting thimble structure 2061 to be adjusted that is not flush with the upper end of the configuration plate 202, the lifting thimble structure 2061 is adjusted to rise or fall by rotating the lifting thimble structure 2061 to be adjusted until the lifting thimble structure 2061 to be adjusted is aligned with the configuration plate 202 The height difference is the same as the height difference between other lifting thimble structures 2061 and the configuration plate 202, and finally the heights of each lifting thimble structure 2061 are consistent;

S4. Install the electrostatic chuck 204 so that each through hole of the electrostatic chuck 204 and each through hole of the configuration plate 202 respectively form guide channels 205 .

Preferably, after the electrostatic chuck 204 is installed, the electrostatic chuck 204 can be used as a height measuring device, and the height of the top position of each lifting thimble structure 2061 is compared with the upper end position of the electrostatic chuck 204 to judge the height of each lifting thimble structure 2061. Whether it is flush or not, when there is a lifting thimble structure 2061 to be adjusted that is not flush with the upper end of the electrostatic chuck 204, it can be divided into the following two situations:

1) As shown in Figure 2, when the top position of the lifting thimble structure 2061 to be adjusted is located in the guide channel 205, insert the supporting tool into the guiding channel 205, and use the supporting tool to drive the lifting thimble structure 2061 to be adjusted to rotate, thereby adjusting The lifting thimble structure 2061 rises or falls until the height difference between the lifting thimble structure 2061 to be adjusted and the electrostatic chuck 204 is the same as the height difference between the other lifting thimble structures 2061 and the electrostatic chuck 204, and finally the heights of each lifting thimble structure 2061 are consistent ;

2) As shown in Figure 3, when the top position of the lifting thimble structure 2061 to be adjusted is located above the upper end of the electrostatic chuck 204, the lifting or lowering of the lifting thimble structure 2061 is adjusted by rotating the lifting thimble structure 2061 to be adjusted until it is to be adjusted The height difference between the lifting thimble structure 2061 and the electrostatic chuck 204 is the same as the height difference between the other lifting thimble structures 2061 and the electrostatic chuck 204, so that the height of each lifting thimble structure 2061 is finally consistent.

Therefore, adjusting the height of the lifting thimble structure 2061 by the above method can avoid disassembling the electrostatic chuck 204 and the configuration plate 202, improve the work efficiency of the staff, reduce the disassembly loss of the plasma processing device, and increase the number of plasma processing devices. service life.

Embodiment two

Based on the structural characteristics of the plasma processing device in Embodiment 1, this embodiment makes some changes to the structure of the lifting thimble assembly 206, mainly for the central shaft 2062 of the lifting thimble bellows and the lifting thimble structure 2061.

A hollow groove is arranged on the top of the bellows central axis 2062 of the lifting thimble, and a thread structure is arranged on the outside of the side wall of the hollow groove. Correspondingly, the lifting thimble structure 2061 includes a lifting thimble. The bottom end of the lifting thimble has a hole structure. The side wall of the hole structure is provided with a thread structure. The center of the hole structure is a solid cylinder. The external thread structure on the side wall of the hollow groove cooperates, and the height of the lifting thimble can be adjusted by rotating the lifting thimble. The lifting thimble can be made of ceramic material or stainless steel material, preferably, the lifting thimble pin of this embodiment is made of stainless steel material.

In addition, other structures and functioning modes of the components in this embodiment, such as the elastic body 2063 and the air hole structure 2064, are the same as those described in the first embodiment, and will not be repeated here.

Embodiment three

Based on the structural characteristics of the plasma processing device in Embodiment 1, this embodiment makes some changes to the structure of the lifting thimble assembly 206 , mainly for the lifting thimble structure 2061 .

A hollow groove is arranged on the top of the central shaft 2062 of the bellows of the lifting thimble, and a thread structure is provided on the side wall of the hollow groove, which is connected with the lifting thimble structure 2061 through threads.

Lifting thimble structure 2061 includes: lifting thimble and thread sleeve. The lifting thimble is embedded in the threaded sleeve, and the threaded sleeve has a threaded structure on the outside to cooperate with the threaded structure on the side wall of the hollow groove. It should be noted that the material of the lifting thimble can be different from or the same as that of the threaded sleeve. If the material of the lifting thimble is not suitable for processing the thread structure, the combination of the lifting thimble structure 2061 is preferred.

In addition, other structures and functioning modes of the components in this embodiment, such as the elastic body 2063 and the air hole structure 2064, are the same as those described in the first embodiment, and will not be repeated here.

Embodiment four

Based on the structural characteristics of the plasma treatment device in the first embodiment, some changes are mainly made to the elastic body 2063 in this embodiment. In this embodiment, the elastic body 2063 is a spring device, and the diameter of the spring device is smaller than that of the lifting thimble, so that the spring device can provide enough rebound force for the lifting thimble to ensure that the lifting thimble and the central axis 2062 of the bellows of the lifting thimble a solid connection. Other structural parts and function modes of each component in this embodiment are the same as those described in Embodiment 1, and will not be repeated here.

To sum up, the plasma treatment device including the adjustable lifting thimble assembly 206 of the present invention, through the improvement of the lifting thimble assembly 206, makes the height adjustment method of the lifting thimble structure 2061 more convenient, and does not need to be disassembled for more plasma treatment The parts of the device can complete the adjustment process, which improves the debugging efficiency of the staff, and the adjustment process can be completed without dismantling many parts, which not only reduces the disassembly loss of the plasma treatment device, but also increases the efficiency of the plasma treatment. The service life of the device.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those of ordinary skill in the art after reading the above disclosure. Therefore, the protection scope of the present invention should be defined by the appended patent application scope.

101: Vacuum reaction chamber 102,202: configuration disk 104, 204: electrostatic chuck 105,205: Guidance channel 106,206: Lifting thimble assembly 107: O-ring 209: Bellows 2021: Intermediate flange 1061: Lifting thimble 2061: Lifting thimble structure 1062, 2062: central axis of lift thimble bellows 2063: Elastomer 2064: Pore structure

Fig. 1 is the plasma treatment device of prior art; Fig. 2 is a schematic diagram of the top position of the lifting thimble structure in the plasma processing device containing the adjustable lifting thimble assembly of the present invention located in the guide channel; FIG. 3 is a schematic diagram of the top position of the lift pin structure located above the upper end surface of the electrostatic chuck in the plasma processing device including the adjustable lift pin assembly of the present invention.

202: configuration disk

204: Electrostatic Chuck

205: guide channel

206: Lifting thimble assembly

209: Bellows

2021: Intermediate flange

2061: Lifting thimble structure

2062: Lifting thimble bellows central axis

2063: Elastomer

2064: Pore structure

Claims (11)

A plasma treatment device with an adjustable lifting thimble assembly, comprising: A vacuum reaction chamber, the vacuum reaction chamber contains a configuration plate, an electrostatic chuck for placing a wafer to be processed is arranged above the configuration plate, and a plurality of channels are provided on the configuration plate and the electrostatic chuck. Each of the through holes on the configuration plate and the corresponding through holes on the electrostatic chuck form a guide channel in the vertical direction, and a plurality of lifting thimble assemblies pass through the corresponding guide channel respectively to realize the crystal Round pick and place where the lift pin assembly contains: A lifting thimble structure and a central axis of the bellows of the lifting thimble, the lifting thimble structure and the central axis of the bellows of the lifting thimble are connected through threads, so that the height of the lifting thimble structure can be adjusted by rotation. The plasma treatment device containing the adjustable lifting thimble assembly as described in claim 1, wherein The central axis of the corrugated pipe of the lifting thimble is provided with a hollow groove, and the side wall of the hollow groove is provided with a thread structure, which is connected with the structure of the lifting thimble through threads; The lifting thimble structure includes: A lifting thimble with threaded structure at the end matches with the hollow groove of the central axis of the bellows of the lifting thimble. The plasma treatment device containing the adjustable lifting thimble assembly as described in claim 1, wherein, A hollow groove is arranged on the central axis of the bellows of the lifting thimble, and a thread structure is provided on the side wall of the hollow groove, which is connected with the structure of the lifting thimble through threads; The lifting thimble structure includes: A lifting thimble and a threaded sleeve with a thread structure on the outside, the lifting thimble is embedded in the threaded sleeve, and the threaded sleeve is matched with the hollow groove of the central axis of the bellows of the lifting thimble. According to any one of claim 2 or claim 3, the plasma processing device including the adjustable lifting thimble assembly, wherein the lifting thimble is made of ceramic material or metal material. As described in any one of claim 1, claim 2, or claim 3, the plasma processing device containing the adjustable lifting thimble assembly, wherein there are three lifting thimble assemblies, which are distributed in an isosceles triangle by the The corresponding guide channels formed by the electrostatic chuck and the configuration plate. The plasma processing device containing an adjustable lifting thimble assembly as described in any one of claim 2 or claim 3, wherein the lifting thimble assembly further includes: An elastic body, the elastic body is placed under the lifting thimble structure, the upper end of the elastic body is in contact with the bottom of the lifting thimble structure, and the lower end of the elastic body is in contact with the hollow groove of the central axis of the lifting thimble bellows Bottom contact, the elastic body provides rebound force for the lifting thimble structure. The plasma processing device with an adjustable lift pin assembly as claimed in claim 6, wherein the elastic body is an elastic material or a spring device, and the radius of the spring device is smaller than the radius of the bottom of the lift pin structure. The plasma processing device containing the adjustable lifting thimble assembly according to any one of claim 2 or claim 3, wherein at least one air hole structure is opened on the side wall of the hollow groove of the central axis of the bellows of the lifting thimble . According to any one of Claim 1, Claim 2, or Claim 3, the plasma processing device containing the adjustable lifting thimble assembly, wherein there is a gap between the lifting thimble assembly and the side wall of the guide channel, the The lift pin assembly further includes: A supporting tool is used to extend into the guide channel to rotate the lifting thimble structure. A method for adjusting the height of the lifting thimble structure of a plasma treatment device containing an adjustable lifting thimble assembly as described in any one of claim 1 to claim 9, comprising the following steps: S1. Install the lifting thimble structure into the through hole of the configuration plate; S2, using the configuration plate as a height measuring device, comparing the height of the top position of each lifting thimble structure with the upper end position of the configuration plate, and judging whether each lifting thimble structure is flush; S3. When there is the lifting thimble structure to be adjusted that is not flush with the upper end of the configuration plate, adjust the lifting thimble structure to rise or fall by rotating the lifting thimble structure to be adjusted until the lifting thimble structure to be adjusted is in line with the The height difference of the configuration plate is the same as that of the other lifting thimble structures and the configuration plate, so that the heights of the lifting thimble structures are finally consistent; S4. Install the electrostatic chuck so that each of the through holes of the electrostatic chuck and each of the through holes of the configuration plate respectively form the guide channels. The method for adjusting the height of the lifting thimble structure of the plasma processing device including the adjustable lifting thimble assembly as described in claim 10, further comprising: S5, using the electrostatic chuck as a height measuring device, comparing the height of the top position of each lifting thimble structure with the upper end position of the electrostatic chuck, and judging whether each lifting thimble structure is level; S6. When there is the lifting thimble structure to be adjusted that is not flush with the upper end of the electrostatic chuck, The top position of the lifting thimble structure to be adjusted is located in the guide channel, the supporting tool is inserted into the guiding channel, and the supporting tool is used to drive the lifting thimble structure to be adjusted to rotate, thereby adjusting the lifting thimble structure to rise or fall. Descend until the height difference between the lifting thimble structure to be adjusted and the electrostatic chuck is the same as the height difference between the other lifting thimble structures and the electrostatic chuck, and finally make the heights of the lifting thimble structures consistent; Alternatively, the top position of the lifting thimble structure to be adjusted is located above the upper end of the electrostatic chuck, and the lifting or lowering of the lifting thimble structure is adjusted by rotating the lifting thimble structure to be adjusted until the lifting thimble structure to be adjusted is in line with the The height difference of the electrostatic chuck is the same as that of the other elevating pin structures and the electrostatic chuck, so that the heights of the elevating pin structures are finally consistent.

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