TWI790028B - Deposition apparatus and deposition method - Google Patents

Abstract

A deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber, wherein the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off. A deposition method is also provided.

Description

Deposition equipment and deposition method

The present disclosure relates to a deposition device and a deposition method, and in particular to an atomic layer deposition device and an atomic layer deposition method.

Atomic Layer Deposition (ALD) and Plasma Assisted Atomic Layer Deposition (PEALD) are widely used in semiconductor manufacturing process to form a thin film with full coverage and uniform thickness on the surface of a substrate. Atomic layer deposition is similar to ordinary chemical vapor deposition (CVD).

Taking a substrate with a high aspect ratio structure as an example, atomic layer deposition technology injects precursors along the horizontal direction. Although a thin film with uniform thickness can be formed in a high aspect ratio structure, the growth rate in the vertical direction is not good. As a result, the coating efficiency cannot be improved. In contrast, the plasma-assisted atomic layer deposition technology injects precursors in the vertical direction. Although it can accelerate the growth rate in the vertical direction, the thickness of the film formed in the high aspect ratio structure is not uniform, resulting in the coating uniformity cannot be improved. .

The disclosure provides a deposition device and a deposition method, which help to improve the coating efficiency and uniformity.

The deposition equipment according to an embodiment of the present disclosure is suitable for atomic layer deposition of high aspect ratio structures. The deposition equipment includes a cavity, a platform, a shower head, a bias power supply, a first injection device and a second injection device. The platform and the shower head are arranged in the cavity, and the platform is used for supporting the base material with a high aspect ratio structure. The bias power is coupled to the platform. The first injection device and the second injection device are connected to the cavity, wherein the first injection device is used to inject the first precursor or the first inert gas into the cavity through the shower head along the first direction, and the second injection device is used to inject the first precursor or the first inert gas into the cavity along the vertical direction. A second precursor or a second inert gas is injected into the cavity in a second direction from the first direction. The first injection device and the second injection device sequentially inject the first precursor and the second precursor into the cavity through the shower head. When the first precursor or the second precursor is injected into the cavity, the bias power supply is turned on. After the first precursor or the second precursor is injected into the cavity, the first injection device injects the first inert gas into the cavity or the second injection device injects the second inert gas into the cavity, and the bias power is turned off.

A deposition method according to an embodiment of the present disclosure includes the following steps. The first precursor is injected into the cavity along the first direction, and the bias power is turned on, so as to attract the first precursor to the substrate with the high aspect ratio structure. injecting a second precursor into the cavity along a second direction perpendicular to the first direction, and turning on a bias power supply to attract the second precursor to the substrate with a high aspect ratio structure. Injecting a first inert gas into the cavity along a first direction, and turning off the bias power supply to remove excess first precursor or excess second precursor or by-products. Injecting a second inert gas into the cavity along a second direction, and turning off the bias power supply to remove excess first precursor or excess second precursor or secondary product.

In order to make the above-mentioned features of the present disclosure more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

10: Substrate

11: High aspect ratio structure

20: The first precursor

21: The first inert gas

25: sprinkler head

30: Second precursor

31: Second inert gas

40: Extract air flow

50: film

100, 100A~100G: deposition equipment

101: Low pressure cavity

102: Valve

110: Cavity

111: Intake channel

112: air extraction channel

120: platform

130: Bias power supply

140: The first injection device

150: Second injection device

160: RF power supply

170: Air extraction device

180: the first heater

181:Second heater

D1: the first direction

D2: Second direction

S1: first half reaction step

S2: second cleaning step

S3: second half reaction step

S4: first cleaning step

S5: cleaning step

1A to 1H are schematic diagrams of deposition equipment according to the first to eighth embodiments of the present disclosure.

2A to 2E are partially enlarged schematic diagrams of a deposition process of a high aspect ratio structure according to an embodiment of the present disclosure.

FIG. 3A is a schematic flowchart of a deposition method according to a first embodiment of the present disclosure.

FIG. 3B is a timing diagram of the deposition method of FIG. 3A .

FIG. 4A is a schematic flowchart of a deposition method according to a second embodiment of the present disclosure.

FIG. 4B is a timing diagram of the deposition method of FIG. 4A .

FIG. 5A is a schematic flowchart of a deposition method according to a third embodiment of the present disclosure.

FIG. 5B is a schematic timing diagram of the deposition method of FIG. 5A .

FIG. 6A is a schematic flowchart of a deposition method according to a fourth embodiment of the present disclosure.

FIG. 6B is a schematic timing diagram of the deposition method of FIG. 6A .

FIG. 7A is a schematic flowchart of a deposition method according to a fifth embodiment of the present disclosure.

FIG. 7B is a schematic timing diagram of the deposition method of FIG. 7A .

1A to 1H are schematic diagrams of deposition equipment according to the first to eighth embodiments of the present disclosure. Referring to FIG. 1A , in this embodiment, the deposition equipment 100 may be an atomic layer deposition equipment, and is suitable for atomic layer deposition of structures with high aspect ratios. In detail, the deposition apparatus 100 includes a cavity 110, a platform 120, a shower head 25, a bias power supply 130, a first injection device 140, and a second injection device 150, wherein the platform 120 is disposed in the cavity 110, and the substrate 10 It is configured on the platform 120 . On the other hand, the substrate 10 has a plurality of high aspect ratio structures 11 such as blind holes or trenches.

The spray head 25 is disposed in the cavity 110 corresponding to the first injection device 140 and is located above the platform 120 . The first injection device 140 and the second injection device 150 are connected to the cavity 110, wherein the first injection device 140 is used to inject the first precursor 20 or the first inert gas 21 into the cavity 110 evenly through the shower head 25 along the first direction D1 , and the second injection device 150 is used for injecting the second precursor 30 or the second inert gas 31 into the cavity 110 along the second direction D2 perpendicular to the first direction D1. Further, the first precursor 20 is uniformly injected into the chamber 110 through the shower head 25 along the first direction D1 (for example, the vertical direction) and flows to the substrate 10 to form a vertical flow, which helps to accelerate the growth of the film in the vertical direction. rate. In contrast, the second precursor 30 is injected into the cavity 110 along the second direction D2 (for example, the horizontal direction) and flows through the substrate 10 to form a cross flow, which helps to improve the uniformity of the film formed in the high aspect ratio structure 11. Spend.

During the average injection of the first precursor 20 into the cavity 110 through the shower head 25, the first precursor 20 produces chemical adsorption of a single atomic layer on the surface of the substrate 10 and the inner wall surface of the high aspect ratio structure 11, so that the substrate Functional groups are generated on the surface of 10 and the inner wall of the high aspect ratio structure 11, which is the first half reaction step. In the second precursor 30 During injection into the cavity 110, the second precursor 30 reacts with the functional group of the first precursor 20 located on the surface of the substrate 10 and the inner wall of the high aspect ratio structure 11 to form a single atomic layer, which is the second half-layer. Reaction steps.

That is to say, in the first half-reaction step and the second half-reaction step, the first precursor 20 and the second precursor 30 are respectively injected into the cavity 110 along two different directions, which not only helps to improve the coating efficiency, but also helps To improve the uniformity of the thin film formed in the high aspect ratio structure 11.

As shown in FIG. 1A, the bias power supply 130 is electrically coupled to the platform 120. When the first precursor 20 or the second precursor 30 is injected into the cavity 110, the bias power supply 130 is turned on to apply a bias voltage to the platform 120 and the platform 120. Substrate 10 thereon. Under the action of the bias voltage, the first precursor 20 or the second precursor 30 is attracted to the substrate 10 and moves into the high aspect ratio structure 11, which helps to improve the coating efficiency and uniformity.

After the first precursor 20 or the second precursor 30 is injected into the cavity 110, the first injection device 140 injects the first inert gas 21 into the cavity 110 or the second injection device 150 injects the second inert gas 31 into the cavity 110, And turn off the bias power supply 130, so as to remove or dredge the first precursor 20 or the second precursor 30 blocked in the opening of the high aspect ratio structure 11, and make the first precursor 20 or the second precursor 30 fall smoothly into the high aspect ratio structure 11.

Further, the first inert gas 21 is injected into the cavity 110 along the first direction D1 (for example, the vertical direction) and flows toward the substrate 10 to accelerate the first precursor 20 or the second precursor 30 to fall into the high aspect ratio structure 11 , and cover the inner wall surface of the high aspect ratio structure 11, and at the same time remove the excess first precursor or second precursor, which is the first Clear steps. In contrast, the second inert gas 31 is injected into the cavity 110 along the second direction D2 (for example, the horizontal direction) and flows through the substrate 10 to remove or dredge the first precursor 20 or the second Two precursors 30, this is the second cleaning step.

In the deposition process of the first embodiment, the first half-reaction step, the second cleaning step, the second half-reaction step and the first cleaning step are executed in sequence, and are executed twice.

In the deposition procedure of the second embodiment, the first half-reaction step and the second cleaning step are executed sequentially and performed twice, and then the second half-reaction step and the first cleaning step are sequentially executed twice.

In the deposition procedure of the third embodiment, the first half-reaction step, the first cleaning step, the second half-reaction step and the second cleaning step are executed in sequence, and are executed twice.

In the deposition procedure of the fourth embodiment, the first half-reaction step, the first cleaning step, the second half-reaction and the first cleaning step are executed sequentially, and then, the first half-reaction step, the second cleaning step, the second The half reaction and the second cleanup step are performed sequentially.

In the deposition procedure of the fifth embodiment, the first half-reaction step and the first cleaning step are executed in sequence twice, and then the second half-reaction step and the second cleaning step are executed in sequence twice.

Please refer to the schematic diagram of the deposition equipment of the first embodiment in FIG. Sexually coupled to the shower head 25, and the RF power supply 160 is turned on when injecting the first precursor 20, through generating plasma to accelerate the dissociation reaction of the first precursor 20, and at the same time, the bias power supply 130 can be turned on, In order to apply a bias voltage to the platform 120 and the substrate 10 thereon. Under the action of the bias voltage, the first precursor 20 is attracted to the substrate 10 and moves into the high aspect ratio structure 11, which helps to improve the coating efficiency and uniformity. In addition, the suction device 170 is connected to the cavity 110 and generates the suction air flow 40 in the second direction D2. After the deposition process is completed, the exhaust device 170 is turned on to extract excess first precursor 20 and/or excess second precursor 30 and/or by-products out of the cavity 110 .

Please refer to the schematic diagram of the deposition equipment of the second embodiment of FIG. 1B , the difference between the deposition equipment 100A and the deposition equipment 100 of the first embodiment of FIG. The first heater 180 and the second heater 181 thermally coupled to the second injection device 150 . Further, when the first precursor 20 is injected into the cavity 110 , the first heater 180 is turned on and heats the first precursor 20 to provide energy required for the reaction of the first precursor 20 . In addition, when the second precursor 30 is injected into the cavity 110 , the second heater 181 is turned on and heats the second precursor 30 to provide energy required for the reaction of the second precursor 30 .

Please refer to the schematic diagram of the deposition equipment of the third embodiment of FIG. 1C, the difference between the deposition equipment 100B and the deposition equipment 100 of the first embodiment of FIG. The pumping device 170 is connected to the low-pressure cavity 101, and the pumping device 170 pumps air to the low-pressure cavity 101, so that the low-pressure cavity 101 is kept in a state close to vacuum, such as 10 ⁻⁴ torr.

Furthermore, the suction device 170 is indirectly connected to the cavity 110 through the low-pressure cavity 101 , and the pressure of the low-pressure cavity 101 is lower than the pressure of the cavity 110 . That is to say, there is a pressure difference between the cavity 110 and the low-pressure cavity 101 . Further, Shen The deposition device 100B further includes a valve 102 disposed between the chamber 110 and the low-pressure chamber 101 , and the valve 102 is closed during the deposition procedure. After the deposition process is completed, the valve 102 is opened to communicate with the chamber 110 and the low-pressure chamber 101, and an air extraction flow 40 is generated in the second direction D2, so that the excess first precursor 20 and/or the excess first precursor 20 and/or the excess second The secondary precursors 30 and/or by-products are rapidly drawn out of the chamber 110 .

Please refer to the schematic diagram of the deposition equipment of the fourth embodiment in FIG. 1D , the difference between the deposition equipment 100C and the deposition equipment 100B of the third embodiment in FIG. The first heater 180 and the second heater 181 thermally coupled to the second injection device 150 . The deposition apparatus 100C has a low-pressure chamber 101 connected to the chamber 110, and when the first precursor 20 is injected into the chamber 110, the first heater 180 is turned on and heats the first precursor 20 to provide the first precursor 20 The energy required for the reaction. In addition, when the second precursor 30 is injected into the cavity 110 , the second heater 181 is turned on and heats the second precursor 30 to provide energy required for the reaction of the second precursor 30 .

Please refer to the schematic diagram of the deposition equipment of the fifth embodiment of FIG. 1E, the difference between the deposition equipment 100D and the deposition equipment 100 of the first embodiment of FIG. . In this embodiment, a plurality of air intake channels 111 and a plurality of air extraction channels 112 are arranged alternately inside the cavity 110, and the plurality of air intake channels 111 and the plurality of air extraction channels 112 are located on the platform 120 above. In this embodiment, the plurality of intake passages 111 and the plurality of suction passages 112 are located between the first injection device 140 and the platform 120 .

In detail, the first injection device 140 connects the plurality of intake passages 111 , and the first precursor 20 flows toward the substrate 10 through the plurality of gas inlet channels 111 . On the other hand, the suction device 170 connects the plurality of suction channels 112 to generate the suction airflow 40 in the first direction D1. After the deposition process is completed, the exhaust device 170 is turned on to extract excess first precursor 20 and/or excess second precursor 30 and/or by-products out of the cavity 110 .

Please refer to the schematic diagram of the deposition equipment of the sixth embodiment in FIG. 1F , the difference between the deposition equipment 100E and the deposition equipment 100D of the fifth embodiment in FIG. The first heater 180 and the second heater 181 thermally coupled to the second injection device 150 . Further, when the first precursor 20 is injected into the cavity 110 , the first heater 180 is turned on and heats the first precursor 20 to provide energy required for the reaction of the first precursor 20 . In addition, when the second precursor 30 is injected into the cavity 110 , the second heater 181 is turned on and heats the second precursor 30 to provide energy required for the reaction of the second precursor 30 .

Please refer to the schematic diagram of the deposition equipment of the seventh embodiment in FIG. 1G. The difference between the deposition equipment 100F and the deposition equipment 100D of the fifth embodiment in FIG. The pumping device 170 is connected to the low-pressure cavity 101, and the pumping device 170 pumps air to the low-pressure cavity 101, so that the low-pressure cavity 101 is kept in a state close to vacuum, such as 10 ⁻⁴ torr.

Furthermore, the suction device 170 is indirectly connected to the cavity 110 through the low-pressure cavity 101 , and the pressure of the low-pressure cavity 101 is lower than the pressure of the cavity 110 . That is to say, there is a pressure difference between the cavity 110 and the low-pressure cavity 101 . Furthermore, the deposition apparatus 100B further includes a valve disposed between the chamber 110 and the low-pressure chamber 101 102. During the process of performing the deposition procedure, the valve 102 is closed. After the deposition process is completed, the valve 102 is opened to communicate with the chamber 110 and the low-pressure chamber 101, and an air extraction flow 40 is generated in the first direction D1 to remove the excess first precursor 20 and/or the excess first precursor 20. The secondary precursors 30 and/or by-products are rapidly drawn out of the chamber 110 .

Please refer to the schematic diagram of the deposition equipment of the eighth embodiment in FIG. 1H , the difference between the deposition equipment 100G and the deposition equipment 100F of the seventh embodiment in FIG. The first heater 180 and the second heater 181 thermally coupled to the second injection device 150 . The deposition apparatus 100G includes a low-pressure chamber 101 connected to the chamber 110, and when the first precursor 20 is injected into the chamber 110, the first heater 180 is turned on and heats the first precursor 20 to provide the first precursor 20 The energy required for the reaction. In addition, when the second precursor 30 is injected into the cavity 110 , the second heater 181 is turned on and heats the second precursor 30 to provide energy required for the reaction of the second precursor 30 .

2A to 2E are partially enlarged schematic diagrams of a deposition process of a high aspect ratio structure according to an embodiment of the present disclosure. Please refer to FIG. 1A and FIG. 2A , firstly, the first precursor 20 is uniformly injected into the cavity 110 along the first direction D1 through the shower head 25 , and flows toward the substrate 10 . Next, as shown in FIG. 2B , the second inert gas 31 is injected into the cavity 110 along the second direction D2 to remove or dredge the first precursor 20 blocked in the opening of the high aspect ratio structure 11, so that the first precursor 20 can be smoothly ground into the high aspect ratio structure 11, as shown in FIG. 2A and FIG. 2B. Next, please refer to FIG. 1A and FIG. 2C , the second precursor 30 is injected into the cavity 110 along the second direction D2 and flows through the substrate 10 . Next, as shown in FIG. 2D , the first inert gas 21 is evenly injected into the cavity through the shower head 25 along the first direction D1 110 and flow toward the substrate 10 to accelerate the second precursor 30 to fall into the high aspect ratio structure 11 and spread on the inner wall surface of the high aspect ratio structure 11 , as shown in FIG. 2C and FIG. 2D . Finally, a thin film 50 with a uniform thickness is formed in the high aspect ratio structure 11 , and the excess first precursor 20 and excess second precursor 30 and/or by-products are extracted, as shown in FIG. 2E .

FIG. 3A is a schematic flowchart of a deposition method according to a first embodiment of the present disclosure. FIG. 3B is a timing diagram of the deposition method of FIG. 3A . Referring to FIG. 3A and FIG. 3B , the deposition method can be performed by any one of the deposition equipment 100 and the deposition equipment 100A to 100G.

Specifically, the deposition method of the first embodiment of the present disclosure includes a first reaction step and a second reaction step, as shown in FIG. 3A and FIG. 3B , wherein: the first reaction step is the first half-reaction step S1 performed sequentially (inject the first precursor 20 along the first direction D1, and turn on the bias power supply 130) and the second cleaning step S2 (inject the second inert gas 31 along the second direction D2, and turn off the bias power supply 130); the second reaction The steps are to sequentially execute the second half-reaction S3 (inject the second precursor 30 along the second direction D2, and turn on the bias power supply 130) and the first cleaning step S4 (inject the first inert gas 21 along the first direction D1, and Turn off the bias power supply 130).

As shown in FIG. 3A and FIG. 3B , the steps of the deposition method according to the first embodiment of the present disclosure are alternately performing the first reaction step and the second reaction step twice. That is to say, the first half-reaction step S1, the second cleaning step S2, the second half-reaction S3, and the first cleaning step S4 are executed sequentially, and the first half-reaction step S1 and the second cleaning step S2 are sequentially executed again. , the second half-reaction S3 and the first cleaning step S4. Finally, execute The step of clearing and pumping (namely cleaning step S5). In the cleaning step S5, an inert gas (such as a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 and/or other by-products, and clean the chamber The body 110 performs an action of pumping to draw excess first precursor 20 , excess second precursor 30 and/or other by-products out of the cavity 110 . Wherein, the cleaning step S5 can be omitted, and the present disclosure is not limited thereto.

FIG. 4A is a schematic flowchart of a deposition method according to a second embodiment of the present disclosure. FIG. 4B is a timing diagram of the deposition method of FIG. 4A . Referring to FIG. 4A and FIG. 4B , the deposition method can be performed by any one of the deposition equipment 100 and the deposition equipment 100A to 100G.

Specifically, the deposition method of the second embodiment of the present disclosure includes a first reaction step and a second reaction step, as shown in FIG. 4A and FIG. 4B , wherein: the first reaction step is the first half-reaction step S1 performed sequentially (inject the first precursor 20 along the first direction D1, and turn on the bias power supply 130) and the second cleaning step S2 (inject the second inert gas 31 along the second direction D2, and turn off the bias power supply 130); the second reaction The steps are to sequentially execute the second half-reaction S3 (inject the second precursor 30 along the second direction D2, and turn on the bias power supply 130) and the first cleaning step S4 (inject the first inert gas 21 along the first direction D1, and Turn off the bias power supply 130).

As shown in FIG. 4A and FIG. 4B , the steps of the deposition method according to the second embodiment of the present disclosure are first to perform the first reaction step twice, and then to perform the second reaction step twice. That is to say, the first half-reaction step S1, the second cleaning step S2, the first half-reaction step S1 and the second cleaning step S2 are executed sequentially, and then the second half-reaction S3, The first cleaning step S4, the second half-reaction S3 and the first cleaning step S4. Finally, the steps of purging and pumping (namely cleaning step S5) are performed. In the cleaning step S5, an inert gas (such as a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 and/or other by-products, and clean the chamber The body 110 performs an action of pumping to draw excess first precursor 20 , excess second precursor 30 and/or other by-products out of the cavity 110 . Wherein, the cleaning step S5 can be omitted, and the present disclosure is not limited thereto.

FIG. 5A is a schematic flowchart of a deposition method according to a third embodiment of the present disclosure. FIG. 5B is a schematic timing diagram of the deposition method of FIG. 5A . Referring to FIG. 5A and FIG. 5B , the deposition method can be performed by any one of the deposition equipment 100 and the deposition equipment 100A to 100G.

Specifically, the deposition method of the third embodiment of the present disclosure includes a first reaction step and a second reaction step, as shown in FIG. 5A and FIG. 5B , wherein: the first reaction step is the first half-reaction step S1 performed sequentially (inject the first precursor 20 along the first direction D1, and turn on the bias power supply 130) and the first cleaning step S4 (inject the first inert gas 21 along the first direction D1, and turn off the bias power supply 130); the second reaction The steps are to sequentially execute the second half-reaction S3 (inject the second precursor 30 along the second direction D2, and turn on the bias power supply 130) and the second cleaning step S2 (inject the second inert gas 31 along the second direction D2, and Turn off the bias power supply 130).

As shown in FIG. 5A and FIG. 5B , the steps of the deposition method according to the third embodiment of the present disclosure are alternately performing the first reaction step and the second reaction step twice. That is to say, the first half-reaction step S1, the first cleaning step S4, and the second half-reaction step are sequentially performed. S3 and the second cleaning step S2, and execute the first half reaction step S1, the first cleaning step S4, the second half reaction S3 and the second cleaning step S2 in sequence. Finally, the steps of purging and pumping (namely cleaning step S5) are performed. In the cleaning step S5, an inert gas (such as a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 and/or other by-products, and clean the chamber The body 110 performs an action of pumping to draw excess first precursor 20 , excess second precursor 30 and/or other by-products out of the cavity 110 . Wherein, the cleaning step S5 can be omitted, and the present disclosure is not limited thereto.

FIG. 6A is a schematic flowchart of a deposition method according to a fourth embodiment of the present disclosure. FIG. 6B is a schematic timing diagram of the deposition method of FIG. 6A . The deposition method may be performed by any one of the deposition apparatus 100 and the deposition apparatuses 100A to 100G.

Specifically, the deposition method of the fourth embodiment of the present disclosure includes the first reaction step to the fourth reaction step, as shown in FIG. 6A and FIG. 6B , wherein: the first reaction step is the first half-reaction step S1 performed sequentially (inject the first precursor 20 along the first direction D1, and turn on the bias power supply 130) and the first cleaning step S4 (inject the first inert gas 21 along the first direction D1, and turn off the bias power supply 130); the second reaction The steps are sequentially executing the second half-reaction S3 (injecting the second precursor 30 along the second direction D2, and turning on the bias power supply 130) and the first cleaning step S4; the third reaction step is sequentially executing the first half-reaction step S1 and the second cleaning step S2 (inject the second inert gas 31 along the second direction D2, and turn off the bias power supply 130); the fourth reaction step is to execute the second half-reaction S3 and the second cleaning step in sequence S2.

The steps of the deposition method in the fourth embodiment of the present disclosure are sequentially performing the first reaction step to the fourth reaction step. As shown in Figure 6B, the first half-reaction step S1 and the first cleaning step S4 are executed sequentially, then the second half-reaction S3 and the first cleaning step S4 are executed, and then the first half-reaction step S1 and the second cleaning step are executed S2, then execute the second half-reaction S3 and the second cleaning step S2. Finally, the steps of purging and pumping (namely cleaning step S5) are performed. In the cleaning step S5, an inert gas (such as a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 and/or other by-products, and clean the chamber The body 110 performs an action of pumping to draw excess first precursor 20 , excess second precursor 30 and/or other by-products out of the cavity 110 . Wherein, the cleaning step S5 can be omitted, and the present disclosure is not limited thereto.

FIG. 7A is a schematic flowchart of a deposition method according to a fifth embodiment of the present disclosure. FIG. 7B is a schematic timing diagram of the deposition method of FIG. 7A .

Specifically, the deposition method of the fifth embodiment of the present disclosure includes a first reaction step and a second reaction step, as shown in FIG. 7A and FIG. 7B , wherein: the first reaction step is to execute the first half-reaction step S1 sequentially (inject the first precursor 20 along the first direction D1, and turn on the bias power supply 130) and the first cleaning step S4 (inject the first inert gas 21 along the first direction D1, and turn off the bias power supply 130); the second reaction The steps are to sequentially execute the second half-reaction S3 (inject the second precursor 30 along the second direction D2, and turn on the bias power supply 130) and the second cleaning step S2 (inject the second inert gas 31 along the second direction D2, and Turn off the bias power supply 130).

The steps of the deposition method according to the fifth embodiment of the present disclosure are firstly performing the first reaction step twice, and then performing the second reaction step twice. As shown in Figure 7B, the first half-reaction step S1, the first cleaning step S4, the first half-reaction step S1, and the first cleaning step S4 are executed sequentially, and then the second half-reaction S3 and the second cleaning step are sequentially executed. S2, the second half-reaction S3 and the second cleaning step S2. Finally, the steps of purging and pumping (namely cleaning step S5) are performed. In the cleaning step S5, an inert gas (such as a first inert gas 21 or a second inert gas 31) is injected to remove excess first precursor 20, excess second precursor 30 and/or other by-products, and clean the chamber The body 110 performs an action of pumping to draw excess first precursor 20 , excess second precursor 30 and/or other by-products out of the cavity 110 . Wherein, the cleaning step S5 can be omitted, and the present disclosure is not limited thereto.

To sum up, in the deposition equipment and method disclosed in the present disclosure, the first precursor and the second precursor are respectively injected into the cavity along two directions perpendicular to each other, wherein the first precursor forms a vertical flow to the substrate, And the second precursor forms a cross-flow through the substrate. Under the alternating effect of vertical flow and cross flow, it not only helps to accelerate the growth rate of the film in the vertical direction, but also helps to improve the uniformity of the film formed in the high aspect ratio structure. On the other hand, in the process of alternating vertical flow and cross flow, the bias power supply is turned on and applies a bias voltage to the platform and the substrate on it. Under the action of the bias voltage, the first precursor and the second precursor are attracted to the substrate and move into the high aspect ratio structure, which helps to improve the coating efficiency and uniformity.

Although the present disclosure has been disclosed above with the embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in the technical field can do so without departing from the present disclosure. Within the spirit and scope, some changes and modifications can be made, so the scope of protection of this disclosure should be defined by the scope of the appended patent application.

10: Substrate

11: High aspect ratio structure

20: The first precursor

21: The first inert gas

25: sprinkler head

30: Second precursor

31: Second inert gas

40: Extract air flow

100: deposition equipment

110: Cavity

120: platform

130: Bias power supply

140: The first injection device

150: Second injection device

160: RF power supply

170: Air extraction device

D1: the first direction

D2: Second direction

Claims (18)

A deposition device suitable for atomic layer deposition of a high aspect ratio structure, wherein the deposition device includes: a cavity; a platform configured in the cavity and used to carry a substrate having the high aspect ratio structure; a shower head configured In the cavity; a bias power supply, coupled to the platform; a first injection device, connected to the cavity, and used to inject the first precursor or the first inert gas into the cavity through the shower head along the first direction and a second injection device connected to the cavity and used to inject a second precursor or a second inert gas into the cavity along a second direction perpendicular to the first direction, the first injection device and the second The injection device sequentially injects the first precursor and the second precursor into the cavity, and when the first precursor or the second precursor is injected into the cavity, the bias power supply is turned on, and the first precursor After the substance or the second precursor is injected into the cavity, the first injection device injects the first inert gas into the cavity or the second injection device injects the second inert gas into the cavity, and closes the bias power supply. The deposition equipment as claimed in claim 1 further includes: a radio frequency power source coupled to the first injection device or the shower head. The deposition device as claimed in claim 1, further comprising: an air extraction device connected to the chamber and generating an air extraction flow in the second direction. The deposition equipment as described in claim 1, further comprising: a low-pressure chamber connected to the chamber; and an air extraction device connected to the low-pressure chamber, wherein the pressure of the low-pressure chamber is lower than the pressure of the chamber, and at The extraction air flow is generated in the second direction. The deposition device according to claim 4, further comprising: a valve disposed between the low-pressure chamber and the chamber. The deposition equipment according to claim 1, wherein the interior of the cavity is provided with a plurality of air intake channels and a plurality of air extraction channels arranged alternately, and the air intake channels and the air extraction channels are located above the platform , wherein the first injection device is connected to the intake channels, and the deposition apparatus further includes a suction device connected to the suction channels to generate a suction flow in the first direction. The deposition equipment according to claim 1, wherein the interior of the cavity is provided with a plurality of air intake channels and a plurality of air extraction channels arranged alternately, and the air intake channels and the air extraction channels are located above the platform , wherein the first injection device is connected to the intake passages, and the deposition apparatus further includes a low-pressure chamber connected to the suction passages and a suction device connected to the low-pressure chamber, wherein the pressure of the low-pressure chamber is lower than the pressure of the cavity, and generate an extraction air flow in the first direction. The deposition device according to claim 7, further comprising: a valve disposed between the low-pressure chamber and the chamber. The deposition apparatus as claimed in claim 1, further comprising: a first heater thermally coupled to the first injection device to heat the first precursor; and The second heater is thermally coupled to the second injection device to heat the second precursor. A deposition method, suitable for atomic layer deposition of high aspect ratio structures, wherein the deposition method includes: injecting a first precursor into the cavity along a first direction, and turning on a bias power supply to attract the first precursor to On the substrate having the high aspect ratio structure; injecting a second precursor into the cavity along a second direction perpendicular to the first direction, and turning on a bias power supply to attract the second precursor to the structure having the high aspect ratio on the substrate of the aspect ratio structure; injecting a first inert gas into the cavity along the first direction, and turning off the bias power supply to remove excess of the first precursor or excess of the second precursor or by-products and injecting a second inert gas into the cavity along the second direction, and turning off the bias power supply, so as to remove excess of the first precursor or excess of the second precursor or by-products. The deposition method as claimed in item 10, wherein sequentially injecting the first precursor into the cavity and injecting the second inert gas into the cavity is the first reaction step, and sequentially injecting the second precursor The cavity and injecting the first inert gas into the cavity are a second reaction step, and the first reaction step and the second reaction step are alternately performed twice. The deposition method as claimed in item 10, wherein sequentially injecting the first precursor into the cavity and injecting the second inert gas into the cavity is the first reaction step, and sequentially injecting the second precursor The cavity and the first inert Injecting the inert gas into the cavity is the second reaction step, first performing the first reaction step twice, and then performing the second reaction step twice. The deposition method according to claim 10, wherein the first reaction step is to inject the first precursor into the cavity and the first inert gas into the cavity in sequence, and the second precursor is injected in sequence The cavity and injecting the second inert gas into the cavity are a second reaction step, and the first reaction step and the second reaction step are alternately performed twice. The deposition method according to claim 10, wherein the first reaction step is to inject the first precursor into the cavity and the first inert gas into the cavity in sequence, and the second precursor is injected in sequence the cavity and injecting the first inert gas into the cavity is a second reaction step, sequentially injecting the first precursor into the cavity and injecting the second inert gas into the cavity is a third reaction step, and Sequentially injecting the second precursor into the cavity and injecting the second inert gas into the cavity is a fourth reaction step, and sequentially execute the first reaction step to the fourth reaction step. The deposition method according to claim 10, wherein the first reaction step is to inject the first precursor into the cavity and the first inert gas into the cavity in sequence, and the second precursor is injected in sequence The cavity and injecting the second inert gas into the cavity are the second reaction step, the first reaction step is performed twice, and then the second reaction step is performed twice. The deposition method as claimed in claim 10, further comprising: generating an exhaust gas flow to the cavity in the first direction or the second direction, so as to Excess of the first precursor or excess of the second precursor is drawn out of the cavity. The deposition method as claimed in claim 10, further comprising: heating the first precursor; and heating the second precursor. The deposition method as claimed in claim 10 further includes: turning on the radio frequency power to accelerate the reaction of the first precursor.

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