TWI789375B - 發光二極體晶片的製造方法 - Google Patents

發光二極體晶片的製造方法 Download PDF

Info

Publication number: TWI789375B
Authority: TW; Taiwan
Prior art keywords: transparent substrate; wafer; transparent; emitting diode; light
Prior art date: 2017-03-06

Application number

TW107104141A

Other languages

English (en)

Chinese (zh)

Other versions

TW201838000A (zh

Inventor

岡村卓

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-06

Filing date

2018-02-06

Publication date

2023-01-11

2018-02-06 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2018-10-16 Publication of TW201838000A publication Critical patent/TW201838000A/zh

2023-01-11 Application granted granted Critical

2023-01-11 Publication of TWI789375B publication Critical patent/TWI789375B/zh

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Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
- H10P54/00—
- H10W10/00—
- H10W10/01—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

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Engineering & Computer Science (AREA)
Led Devices (AREA)
Dicing (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Laser Beam Processing (AREA)

TW107104141A 2017-03-06 2018-02-06 發光二極體晶片的製造方法 TWI789375B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017-041315		2017-03-06
JP2017041315A JP2018148016A (ja)	2017-03-06	2017-03-06	発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number	Publication Date
TW201838000A TW201838000A (zh)	2018-10-16
TWI789375B true TWI789375B (zh)	2023-01-11

Family

ID=63485903

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW107104141A TWI789375B (zh)	2017-03-06	2018-02-06	發光二極體晶片的製造方法

Country Status (4)

Country	Link
JP (1)	JP2018148016A (ja)
KR (1)	KR102315305B1 (ja)
CN (1)	CN108538995A (ja)
TW (1)	TWI789375B (ja)

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TW201347242A (zh) *	2012-02-27	2013-11-16	三菱化學股份有限公司	波長變換構件及使用其之半導體發光裝置
TW201444120A (zh) *	2013-05-08	2014-11-16	Ind Tech Res Inst	發光二極體晶圓及其製造方法
TW201511331A (zh) *	2013-08-30	2015-03-16	Asahi Kasei E Materials Corp	半導體發光元件及光學膜
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2017
- 2017-03-06 JP JP2017041315A patent/JP2018148016A/ja active Pending
2018
- 2018-02-06 TW TW107104141A patent/TWI789375B/zh active
- 2018-02-27 KR KR1020180023657A patent/KR102315305B1/ko active Active
- 2018-03-01 CN CN201810171673.1A patent/CN108538995A/zh active Pending

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2013114480A1 (ja) *	2012-02-01	2013-08-08	パナソニック株式会社	半導体発光素子、その製造方法及び光源装置
TW201347242A (zh) *	2012-02-27	2013-11-16	三菱化學股份有限公司	波長變換構件及使用其之半導體發光裝置
TW201444120A (zh) *	2013-05-08	2014-11-16	Ind Tech Res Inst	發光二極體晶圓及其製造方法
JP2016521463A (ja) *	2013-05-15	2016-07-21	コーニンクレッカフィリップスエヌヴェＫｏｎｉｎｋｌｉｊｋｅＰｈｉｌｉｐｓＮ．Ｖ．	基板内に散乱機構を有するｌｅｄ
TW201511331A (zh) *	2013-08-30	2015-03-16	Asahi Kasei E Materials Corp	半導體發光元件及光學膜

Also Published As

Publication number	Publication date
CN108538995A (zh)	2018-09-14
KR102315305B1 (ko)	2021-10-19
KR20180102010A (ko)	2018-09-14
JP2018148016A (ja)	2018-09-20
TW201838000A (zh)	2018-10-16

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