TWI788465B - Light-transmitting conductive film, manufacturing method thereof, light-adjusting film, and light-adjusting member - Google Patents
Light-transmitting conductive film, manufacturing method thereof, light-adjusting film, and light-adjusting member Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
本發明之透光性導電膜係於第1方向、及與第1方向正交之第2方向上延伸,且具備基材膜、及透光性導電層。於對透光性導電膜實施自20℃升溫至160℃後降溫至20℃之熱機械分析步驟時,下述式所表示之面內尺寸變化率R為0.55%以下。 R=(ΔL1 2 +ΔL2 2 )1/2 其中,ΔL1 表示上述第1方向上之上述分析步驟前後之尺寸變化率(%),ΔL2 表示上述第2方向上之上述分析步驟前後之尺寸變化率(%)。The light-transmitting conductive film of the present invention extends in a first direction and a second direction perpendicular to the first direction, and includes a base film and a light-transmitting conductive layer. When the thermomechanical analysis step is performed on the light-transmitting conductive film from 20°C to 160°C and then cooled to 20°C, the in-plane dimensional change rate R represented by the following formula is 0.55% or less. R=(ΔL 1 2 +ΔL 2 2 ) 1/2 Wherein, ΔL 1 represents the dimensional change rate (%) in the above-mentioned first direction before and after the above-mentioned analysis step, and ΔL 2 represents the dimensional change rate (%) in the above-mentioned second direction before and after the above-mentioned analysis step Dimensional change rate (%).
Description
本發明係關於一種透光性導電膜、其製造方法、以及具備該透光性導電膜之調光膜及調光構件。The present invention relates to a light-transmitting conductive film, a manufacturing method thereof, a light-adjusting film and a light-adjusting member provided with the light-transmitting conductive film.
近年來,由於空調負載之降低或設計性等而對於以智慧型窗戶等為代表之調光裝置之需求提高。調光裝置係用於建築物或交通工具之窗玻璃、隔板、室內裝飾等各種用途。In recent years, the demand for dimming devices such as smart windows has increased due to the reduction of air-conditioning loads and design features. Dimming devices are used in various applications such as window glass, partitions, and interior decoration of buildings and vehicles.
作為用於調光裝置之調光膜,例如於專利文獻1中提出有具備2片透明導電性樹脂基材、及由2片透明導電性樹脂基材所夾持之調光層之膜(例如參照專利文獻1)。As a dimming film for a dimming device, for example, a film with two transparent conductive resin substrates and a dimming layer sandwiched by two transparent conductive resin substrates is proposed in Patent Document 1 (for example, Refer to Patent Document 1).
專利文獻1之調光膜藉由施加電場而調整通過調光層之光之吸收、散射,藉此可實現調光。關於此種調光膜之透明導電性樹脂基材,採用於聚酯膜等支持基材上積層包含銦錫複合氧化物(ITO)之透明電極而成之膜。 先前技術文獻 專利文獻The dimming film of
專利文獻1:WO2008/075773Patent Document 1: WO2008/075773
[發明所欲解決之問題][Problem to be solved by the invention]
調光膜有貼附於大型玻璃(例如1~10 m2 之窗玻璃)等而使用之情形。具體而言,經由熱硬化性或熱熔融性之接著劑等於玻璃上配置與該玻璃大致相同尺寸之調光膜並進行加熱硬化或加熱熔融,藉此將調光膜貼附於玻璃。Light-adjusting films are sometimes attached to large glass (such as window glass of 1-10 m 2 ) and used. Specifically, through a thermosetting or heat-melting adhesive, a light-adjusting film approximately the same size as the glass is placed on the glass and heat-hardened or heat-melted, thereby attaching the light-adjustable film to the glass.
然而,貼附後之調光膜會因加熱而產生較加熱前之狀態發生收縮之不良情況。其結果為,於玻璃(尤其是周端部)上產生未貼附調光膜之部位。成為對象之玻璃之面積越大,該未貼附之部位越明顯。However, the attached light-adjusting film will have the disadvantage of shrinking compared with the state before heating due to heating. As a result, a portion where the light-adjusting film is not attached is produced on the glass (especially the peripheral portion). The larger the area of the target glass, the more obvious the unattached part will be.
本發明在於提供一種可減少未貼附於對象物之面積之透光性導電膜、其製造方法、調光膜、及調光構件。 [解決問題之技術手段]The present invention is to provide a light-transmitting conductive film capable of reducing the area not attached to an object, a manufacturing method thereof, a light-adjusting film, and a light-adjusting member. [Technical means to solve the problem]
本發明[1]包含一種透光性導電膜,其係於第1方向、及與上述第1方向正交之第2方向上延伸者,且具備基材膜、及透光性導電層,於對上述透光性導電膜實施自20℃升溫至160℃後降溫至20℃之熱機械分析步驟時,下述式所表示之面內尺寸變化率R為0.55%以下。The present invention [1] includes a light-transmitting conductive film extending in a first direction and a second direction perpendicular to the above-mentioned first direction, and comprising a base film and a light-transmitting conductive layer. When the thermomechanical analysis step of raising the temperature from 20°C to 160°C and then lowering the temperature to 20°C is performed on the above-mentioned light-transmitting conductive film, the in-plane dimensional change rate R represented by the following formula is 0.55% or less.
R=(ΔL1 2 +ΔL2 2 )1/2 (其中,ΔL1 表示上述第1方向上之上述分析步驟前後之尺寸變化率(%),ΔL2 表示上述第2方向上之上述分析步驟前後之尺寸變化率(%)) 本發明[2]包含如[1]所記載之透光性導電膜,其中ΔL1 之絕對值、及ΔL2 之絕對值兩者均為0.50以下。R=(ΔL 1 2 +ΔL 2 2 ) 1/2 (wherein, ΔL 1 represents the dimensional change rate (%) in the above-mentioned first direction before and after the above-mentioned analysis step, and ΔL 2 represents the above-mentioned analysis step in the above-mentioned second direction Dimensional change rate (%)) The present invention [2] includes the translucent conductive film described in [1], wherein both the absolute value of ΔL 1 and the absolute value of ΔL 2 are 0.50 or less.
本發明[3]包含如[1]或[2]所記載之透光性導電膜,其中ΔL1 、及ΔL2 之至少一者為正值。The present invention [3] includes the translucent conductive film described in [1] or [2], wherein at least one of ΔL 1 and ΔL 2 is a positive value.
本發明[4]包含如[3]所記載之透光性導電膜,其中ΔL1 、及ΔL2 兩者均為正值。The present invention [4] includes the translucent conductive film described in [3], wherein both ΔL 1 and ΔL 2 are positive values.
本發明[5]包含如[1]至[4]中任一項所記載之透光性導電膜,其中上述基材膜為於大氣環境下經加熱處理之膜。The present invention [5] includes the light-transmitting conductive film described in any one of [1] to [4], wherein the above-mentioned base film is a film subjected to heat treatment in an air environment.
本發明[6]包含如[1]至[5]中任一項所記載之透光性導電膜,其中上述基材膜為聚酯系膜。The present invention [6] includes the translucent conductive film according to any one of [1] to [5], wherein the base film is a polyester film.
本發明[7]包含一種調光膜,其依序具備第1透光性導電膜、調光功能層、及第2透光性導電膜,且上述第1透光性導電膜及/或上述第2透光性導電膜為如[1]至[6]中任一項所記載之透光性導電膜。The present invention [7] includes a light-adjusting film comprising a first light-transmitting conductive film, a light-adjusting functional layer, and a second light-transmitting conductive film in sequence, and the above-mentioned first light-transmitting conductive film and/or the above-mentioned The second light-transmitting conductive film is the light-transmitting conductive film described in any one of [1] to [6].
本發明[8]包含一種調光構件,其具備保護構件、及供貼附於上述保護構件之如[7]所記載之調光膜。The present invention [8] includes a dimming member comprising a protective member and the dimming film described in [7] attached to the protective member.
本發明[9]包含一種透光性導電膜之製造方法,其係製造如[1]至[6]中任一項所記載之透光性導電膜之方法,且包括:於大氣環境下對基材膜進行加熱之步驟、及繼而於使上述基材膜未達40℃之狀態下於上述基材膜上設置透光性導電層之步驟。 [發明之效果]The present invention [9] includes a method of manufacturing a light-transmitting conductive film, which is a method of manufacturing a light-transmitting conductive film as described in any one of [1] to [6], and includes: A step of heating the base film, and then a step of forming a light-transmitting conductive layer on the base film in a state where the base film is kept below 40°C. [Effect of Invention]
本發明之透光性導電膜於實施20℃-160℃-20℃之熱機械分析步驟時之面內尺寸變化率R為0.55%以下。The translucent conductive film of the present invention has an in-plane dimensional change rate R of 0.55% or less when subjected to a thermomechanical analysis step at 20°C-160°C-20°C.
因此,即便藉由加熱將本發明之透光性導電膜向對象物貼附,透光性導電膜亦可維持與加熱前之狀態接近之尺寸。因此,可減少未貼附於對象物之面積,而可將所需尺寸之透光性導電膜貼附於對象物。Therefore, even if the light-transmitting conductive film of the present invention is attached to an object by heating, the light-transmitting conductive film can maintain a size close to the state before heating. Therefore, the area not attached to the object can be reduced, and a translucent conductive film of a desired size can be attached to the object.
本發明之調光膜及調光構件由於具備本發明之透光性導電膜,故而可減少透光性導電膜未貼附於對象物之面積。Since the light-adjusting film and the light-adjusting member of the present invention are equipped with the light-transmitting conductive film of the present invention, the area where the light-transmitting conductive film is not attached to the object can be reduced.
本發明之製造方法可獲得一種可減少未貼附於對象物之面積之透光性導電膜。The manufacturing method of the present invention can obtain a light-transmitting conductive film that can reduce the area not attached to the object.
於圖1A中,紙厚方向為前後方向(第1方向),紙面近前側為前側(第1方向一側),紙面裏側為後側(第1方向另一側)。於圖1A中,紙面左右方向為左右方向(寬度方向,與第1方向正交之第2方向),紙面左側為左側(第2方向一側),紙面右側為右側(第2方向另一側)。於圖1A中,紙面上下方向為上下方向(厚度方向,與第1方向及第2方向正交之第3方向),紙面上側為上側(厚度方向一側,第3方向一側),紙面下側為下側(厚度方向另一側,第3方向另一側)。具體而言,依據各圖之方向箭頭。In FIG. 1A , the paper thickness direction is the front-rear direction (first direction), the front side of the paper is the front side (one side in the first direction), and the back side of the paper is the rear side (the other side in the first direction). In Fig. 1A, the left-right direction of the paper is the left-right direction (the width direction, the second direction perpendicular to the first direction), the left side of the paper is the left side (one side of the second direction), and the right side of the paper is the right side (the other side of the second direction). ). In Fig. 1A, the up and down direction on the paper is the up and down direction (thickness direction, the third direction perpendicular to the first direction and the second direction), the upper side on the paper is the upper side (the side in the thickness direction, the third direction side), and the lower side on the paper is The side is the lower side (the other side in the thickness direction and the other side in the third direction). Specifically, according to the direction arrows in each figure.
<一實施形態> 1.透光性導電膜 作為本發明之一實施形態之透光性導電膜1為例如用於作為調光元件之例之調光膜、調光構件、調光裝置等之膜(即調光用透光性導電膜)。如圖1所示,透光性導電膜1形成具有特定厚度之膜形狀(包含片狀),在與上下方向(厚度方向)正交之特定方向(前後方向及左右方向,即面方向)上延伸,且具有平坦之上表面(厚度方向一面)及平坦之下表面(厚度方向另一面)。透光性導電膜1例如為調光膜4(下文敍述,參照圖3)、調光構件6(下文敍述,參照圖4D)及調光裝置(下文敍述)等之一零件,即,並非調光膜4等。即,透光性導電膜1係用以製作調光膜4等之零件,不包含調光功能層5等而以單獨之零件之形式流通,為產業上可利用之器件。<One Embodiment> 1. Light-transmitting conductive film The light-transmitting
具體而言,透光性導電膜1依序具備基材膜2、及透光性導電層3。即,透光性導電膜1具備基材膜2、及配置於基材膜2之上側之透光性導電層3。較佳為透光性導電膜1僅由基材膜2、及透光性導電層3構成。以下,對各層進行詳細敍述。Specifically, the translucent
2.基材膜 基材膜2係透光性導電膜1之最下層,為確保透光性導電膜1之機械強度之支持材。又,基材膜2為具有透光性及可撓性之支持材。基材膜2支持透光性導電層3。2. Substrate film The
基材膜2具有膜形狀(包含片狀)。The
基材膜2例如包含高分子膜。作為高分子膜之材料,可列舉:例如聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等聚酯樹脂、例如聚甲基丙烯酸酯等(甲基)丙烯酸系樹脂(丙烯酸系樹脂及/或甲基丙烯酸系樹脂)、例如聚乙烯、聚丙烯、環烯烴聚合物等烯烴樹脂、例如聚碳酸酯樹脂、聚醚碸樹脂、聚芳酯樹脂、三聚氰胺樹脂、聚醯胺樹脂、聚醯亞胺樹脂、纖維素樹脂、聚苯乙烯樹脂、降𦯉烯樹脂等。該等高分子膜可單獨使用或將2種以上併用。就透光性、耐熱性、機械強度等觀點而言,基材膜2較佳為可列舉由聚酯樹脂形成之聚酯系膜,更佳為可列舉聚對苯二甲酸乙二酯膜。The
就耐熱性、機械強度進一步優異之觀點而言,基材膜2較佳為延伸膜,更佳為雙軸延伸膜。From the viewpoint of further excellent heat resistance and mechanical strength, the
基材膜2較佳為如下所述般於大氣環境下經加熱處理之膜,更佳為於大氣環境下經加熱處理之雙軸延伸膜。若使用此種基材膜2,則存在於基材膜2內部之應力得到緩和,故而於藉由加熱將透光性導電膜1貼附至對象物之情形時,可抑制透光性導電膜1之過度收縮。The
基材膜2之全光線透過率(JIS K-7105)例如為80%以上,較佳為85%以上,且例如為100%以下,較佳為95%以下。The total light transmittance (JIS K-7105) of the
基材膜2之霧度(JIS K-7105)例如為2.0%以下,較佳為1.8%以下,更佳為1.5%以下,進而較佳為1.2%以下,且例如為0.1%以上。The haze (JIS K-7105) of the
基材膜2之厚度例如為2 μm以上,較佳為50 μm以上,更佳為100 μm以上,且例如為300 μm以下,較佳為250 μm以下。若基材膜2之厚度為上述下限以上,則於形成透光性導電層3時,可更多地將高分子膜中所含有之水分賦予至透光性導電層3,故而可抑制透光性導電層3之結晶化。因此,可維持透光性導電層3之非晶質性。又,若基材膜2之厚度為上述下限以上,則透光性導電膜1之強度優異。The thickness of the
基材膜2之厚度例如可使用膜厚計進行測定。The thickness of the
於基材膜2之下表面亦可具備隔離膜等。A separator or the like may be provided on the lower surface of the
3.透光性導電層 透光性導電層3為視需要可於後續步驟中藉由蝕刻進行圖案化之透明性導電層。3. Light-transmitting conductive layer The light-transmitting
透光性導電層3具有膜形狀(包含片狀),且以與基材膜2之上表面接觸之方式配置於基材膜2之整個上表面。The translucent
作為透光性導電層3之材料,例如可列舉包含選自由In、Sn、Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W所組成之群中之至少1種金屬之金屬氧化物。於金屬氧化物中亦可視需要進而摻雜上述群所示之金屬原子。As the material of the light-transmitting
作為透光性導電層3,可列舉:例如銦錫複合氧化物(ITO)等銦系導電性氧化物、例如銻錫複合氧化物(ATO)等銻系導電性氧化物等。就可確保優異之導電性及透光性之觀點而言,透光性導電層3含有銦系導電性氧化物,更佳為含有銦錫複合氧化物(ITO)。即,透光性導電層3較佳為銦系導電性氧化物層,更佳為ITO層。Examples of the translucent
於使用ITO作為透光性導電層3之材料之情形時,氧化錫(SnO2
)含量相對於氧化錫及氧化銦(In2
O3
)之合計量例如為0.5質量%以上,較佳為3質量%以上,更佳為8質量%以上,進而較佳為超過10質量%,且例如為25質量%以下,較佳為15質量%以下,更佳為13質量%以下。若氧化錫之含量為上述下限以上,則可實現透光性導電層3之優異導電性,並且可更確實地抑制結晶化。又,若氧化錫之含量為上述上限以下,則可提高透光性或導電性之穩定性。When using ITO as the material of the light-transmitting
所謂本說明書中之「ITO」,只要為至少包含銦(In)及錫(Sn)之複合氧化物即可,亦可包含該等以外之追加成分。作為追加成分,例如可列舉In、Sn以外之金屬元素,具體而言,可列舉Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W、Fe、Pb、Ni、Nb、Cr、Ga等。"ITO" in this specification should just be a composite oxide containing at least indium (In) and tin (Sn), and may contain additional components other than these. Examples of additional components include metal elements other than In and Sn, and specific examples include Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, W, Fe, and Pb. , Ni, Nb, Cr, Ga, etc.
透光性導電層3可為結晶質或非晶質(非晶)之任一者,較佳為非晶質,更具體而言,較佳為非晶質ITO層。若透光性導電層3為非晶質,則耐龜裂性、耐擦傷性優異,故而加工性優異。即,將透光性導電膜1貼附加工於供貼附之對象物(例如下文敍述之玻璃等保護構件)時,可抑制透光性導電膜1上所產生之龜裂或損傷之產生。因此,可良好地維持所貼附之透光性導電膜1之外觀或特性。The translucent
關於透光性導電層3為非晶質或結晶質之情況,例如於透光性導電層3為ITO層之情形時,可藉由如下方式進行判斷,即,於20℃之鹽酸(濃度5質量%)中浸漬15分鐘後,進行水洗、乾燥,測定15 mm左右間之端子間電阻。於本說明書中,於將透光性導電膜1於鹽酸(20℃,濃度:5質量%)中浸漬並進行水洗、乾燥後透光性導電層中之15 mm間之端子間電阻為10 kΩ以上之情形時,透光性導電層為非晶質。Regarding the case where the light-transmitting
透光性導電層3之表面電阻值例如為1 Ω/□以上,較佳為10 Ω/□以上,且例如為200 Ω/□以下,較佳為100 Ω/□以下,更佳為85 Ω/□以下。若透光性導電層3之表面電阻值為上述範圍內,則即便於作為大型調光裝置而使用之情形時,亦可實現良好之電氣驅動。The surface resistance value of the translucent
透光性導電層3之比電阻值例如為6×10-4
Ω・cm以下,較佳為5.5×10-4
Ω・cm以下,更佳為5×10-4
Ω・cm以下,進而較佳為4.8×10-4
Ω・cm以下,且例如為3×10-4
Ω・cm以上,較佳為3.5×10-4
Ω・cm以上,更佳為4.0×10-4
Ω・cm以上。若透光性導電層3之比電阻值為上述上限以下,則即便於作為大型調光裝置而使用之情形時,亦可實現良好之電氣驅動。又,若比電阻值為上述下限以上,則可更確實地維持透光性導電層3之非晶質性。The specific resistance value of the translucent
透光性導電層3之厚度例如為10 nm以上,較佳為30 nm以上,更佳為50 nm以上,且例如為200 nm以下,較佳為150 nm以下,更佳為100 nm以下。透光性導電層3之厚度例如可藉由使用穿透式電子顯微鏡之剖面觀察進行測定。The thickness of the translucent
4.透光性導電膜之製造方法 接下來,對製造透光性導電膜1之方法進行說明。4. Method of Manufacturing Light-Transmitting Conductive Film Next, a method of manufacturing the light-transmitting
透光性導電膜1之製造方法例如包括:預加熱步驟,其係於大氣環境下對基材膜2進行加熱;及繼而於使基材膜2未達40℃之狀態下於基材膜2上設置透光性導電層3之導電層配置步驟。透光性導電膜1之製造方法較佳為如參照圖2般以捲對捲方式實施。The manufacturing method of the light-transmitting
於預加熱步驟中,首先準備基材膜2。例如,於捲對捲方式之情形時,使用於搬送方向(例如第1方向)上為長條且捲繞成輥狀之基材膜2。In the preheating step, first, the
就機械強度、耐熱性、透光性之觀點而言,較佳為準備雙軸延伸基材膜2。From the viewpoint of mechanical strength, heat resistance, and light transmittance, it is preferable to prepare the biaxially stretched
繼而,於大氣環境下對基材膜2進行加熱。即,於設置透光性導電層3之前對基材膜2進行加熱。基材膜2之加熱較佳為以捲對捲方式實施,例如,於大氣環境下將捲繞成長條之輥狀之基材膜2捲出,一面加熱一面搬送後,再次捲繞成長條之輥狀。Next, the
藉由該加熱處理,可解除基材膜2所內在之應力,可抑制透光性導電膜1之貼附時之熱收縮。尤其是雙軸延伸膜於其製造時藉由延伸而被施加有較強之內部應力,因此可更確實地抑制作為基材膜2之雙軸延伸膜之熱收縮。By this heat treatment, the internal stress of the
又,由於在大氣環境下進行加熱,故而與在真空下進行加熱相比,可抑制基材膜2上所產生之褶皺或損傷,而可良好地維持透光性導電膜1之外觀。即,於將輥狀之基材膜2自輥捲出時或捲取時,由於可使大氣介於所積層之基材膜2之間,故而可抑制基材膜2之密接或摩擦,從而抑制褶皺或損傷。又,於搬送基材膜2時,由於亦可使大氣介於搬送輥(例如導輥)與基材膜2之間,故而亦可抑制與搬送輥之過度密接,從而抑制褶皺或損傷。該等抑制對於大多以大面積使用之調光裝置之外觀尤其有效果。In addition, since heating is performed in an air environment, wrinkles or damages generated on the
加熱溫度例如為100℃以上,較佳為130℃以上,更佳為150℃以上,且例如為220℃以下,較佳為200℃以下,更佳為180℃以下。加熱溫度係用以對基材膜2進行加熱之加熱設備(例如IR(infrared,紅外線)加熱器或加熱輥)之設定溫度。The heating temperature is, for example, above 100°C, preferably above 130°C, more preferably above 150°C, and for example below 220°C, preferably below 200°C, more preferably below 180°C. The heating temperature is a set temperature of a heating device (such as an IR (infrared) heater or a heating roller) for heating the
加熱時間例如為0.3分鐘以上,較佳為0.5分鐘以上,更佳為1分鐘以上,且例如為10分鐘以下,較佳為5分鐘以下。若加熱時間為上述上限以下,則可抑制自基材膜2產生過剩之析出物(低聚物等),從而可抑制基材膜2之透明性降低或高霧度化。又,若加熱時間為上述下限以上,則可充分解除基材膜2之殘留應力,而可更確實地抑制透光性導電膜1之貼附時之熱收縮。The heating time is, for example, 0.3 minutes or more, preferably 0.5 minutes or more, more preferably 1 minute or more, and for example, 10 minutes or less, preferably 5 minutes or less. When heating time is below the said upper limit, generation|occurrence|production of excessive precipitates (oligomer etc.) from the
於導電層配置步驟中,例如藉由乾式於基材膜2之上表面形成透光性導電層3。In the step of arranging the conductive layer, for example, a light-transmitting
作為乾式,例如可列舉真空蒸鍍法、濺鍍法、離子鍍覆法等。較佳為可列舉濺鍍法。As a dry method, a vacuum evaporation method, a sputtering method, an ion plating method, etc. are mentioned, for example. Preferably, a sputtering method is mentioned.
濺鍍法係於真空裝置之腔室(成膜室)內將靶及被附體(基材膜2)對向配置,供給氣體並且施加電壓,藉此加速氣體離子並使之照射至靶,從而使靶材料自靶表面彈出而使該靶材料積層於被附體表面。The sputtering method is to arrange the target and the adherend (substrate film 2) facing each other in the chamber (film-forming chamber) of the vacuum device, supply gas and apply voltage, thereby accelerating gas ions and irradiating them to the target. Thereby, the target material is ejected from the target surface, and the target material is deposited on the surface of the attached body.
作為濺鍍法,例如可列舉:二極濺鍍法、ECR(electron cyclotron resonance,電子回旋共振)濺鍍法、磁控濺鍍法、離子束濺鍍法等。較佳為列舉磁控濺鍍法。As a sputtering method, a diode sputtering method, an ECR (electron cyclotron resonance, electron cyclotron resonance) sputtering method, a magnetron sputtering method, an ion beam sputtering method, etc. are mentioned, for example. Preferably, a magnetron sputtering method is mentioned.
用於濺鍍法之電源例如可為直流(DC)電源、交流中頻(AC/MF)電源、高頻(RF)電源、重疊有直流電源之高頻電源之任一者。The power source used for the sputtering method may be, for example, any one of a direct current (DC) power source, an alternating current medium frequency (AC/MF) power source, a high frequency (RF) power source, and a high frequency power source superimposed with a DC power source.
作為靶,可列舉構成透光性導電層3之上述金屬氧化物。例如,於使用ITO作為透光性導電層3之材料之情形時,使用包含ITO之靶。靶中之氧化錫(SnO2
)含量相對於氧化錫及氧化銦(In2
O3
)之合計量例如為0.5質量%以上,較佳為3質量%以上,更佳為8質量%以上,進而較佳為超過10質量%,且例如為25質量%以下,較佳為15質量%以下,更佳為13質量%以下。As a target, the said metal oxide which comprises the translucent
於濺鍍時,較佳為於真空下實施,其氣壓例如為1.0 Pa以下,較佳為0.5 Pa以下,更佳為0.2 Pa以下,且例如為0.01 Pa以上。Sputtering is preferably carried out under vacuum, and the gas pressure is, for example, 1.0 Pa or less, preferably 0.5 Pa or less, more preferably 0.2 Pa or less, and for example, 0.01 Pa or more.
作為濺鍍時之導入氣體,例如可列舉Ar等惰性氣體。又,於該方法中併用氧氣等反應性氣體。反應性氣體之流量相對於惰性氣體之流量之比(反應性氣體之流量(sccm)/惰性氣體之流量(sccm))例如為0.1/100以上且5/100以下。As an introduction gas at the time of sputtering, an inert gas, such as Ar, is mentioned, for example. In addition, reactive gases such as oxygen are used together in this method. The ratio of the flow rate of the reactive gas to the flow rate of the inert gas (flow rate of the reactive gas (sccm)/flow rate of the inert gas (sccm)) is, for example, 0.1/100 to 5/100.
形成透光性導電層3時之基材膜2之溫度未達40℃,較佳為20℃以下,更佳為10℃以下,進而較佳為5℃以下,尤佳為未達0℃,最佳為-3℃以下,且例如為-40℃以上,較佳為-20℃以上。若基材膜2之溫度超過上述上限,則基材膜2會因搬送方向之張力而於搬送方向上延伸,從而所獲得之透光性導電膜1之基材膜2上殘留有較大應力。其結果為,於將透光性導電膜1貼附至對象物時有大幅熱收縮之虞。The temperature of the
為了將基材膜2進行冷卻,例如使基材膜2之下表面與冷卻裝置(例如冷卻輥)等接觸。In order to cool the
於捲對捲方式中,例如可將成膜輥或夾輥進行冷卻而製成冷卻輥。上述基材膜2之溫度係設為冷卻裝置之設定溫度。In the roll-to-roll system, for example, a film-forming roll or a nip roll can be cooled to form a cooling roll. The temperature of the above-mentioned
濺鍍時之氛圍(腔室內)較佳為含水,水分氣體相對於濺鍍氣壓(全壓)之比(水分氣體之分壓(Pa)/濺鍍氣壓(Pa))例如為0.006以上,較佳為0.008以上,更佳為0.01以上,且例如為0.3以下,較佳為0.1以下,更佳為0.07以下,進而較佳為0.05以下。若將含水量設為上述範圍內,則可使透光性導電層3含有微量之水,可抑制透光性導電層3之結晶化。The atmosphere (in the chamber) during sputtering is preferably water-containing, and the ratio of the moisture gas to the sputtering gas pressure (full pressure) (partial pressure of the moisture gas (Pa)/sputtering gas pressure (Pa)) is, for example, 0.006 or more. It is preferably at least 0.008, more preferably at least 0.01, and for example, at most 0.3, preferably at most 0.1, more preferably at most 0.07, and still more preferably at most 0.05. When the water content is within the above range, a small amount of water can be contained in the light-transmitting
藉此獲得具備基材膜2、及透光性導電層3之透光性導電膜1。此時之透光性導電層3為非晶質。Thereby, the
於所獲得之透光性導電膜1中,其總厚度例如為2 μm以上,較佳為20 μm以上,且例如為300 μm以下,較佳為200 μm以下。In the obtained translucent
透光性導電膜1之面內尺寸變化率R為0.55%以下,較佳為0.30%以下。The in-plane dimensional change rate R of the translucent
面內尺寸變化率R係對透光性導電膜1實施自20℃升溫至160℃後降溫至20℃之熱機械分析步驟(上述分析步驟,以下亦簡稱為「TMA」)時之斜方向(與第1方向及第2方向兩方向交叉之方向)之尺寸變化率,具體而言由下述式表示。The in-plane dimensional change rate R is the oblique direction ( The rate of dimensional change in the direction intersecting both the first direction and the second direction) is specifically expressed by the following formula.
R=(ΔL1 2 +ΔL2 2 )1/2 式中,ΔL1 表示前後方向(第1方向)上之TMA前後之尺寸變化率(%),具體而言由下述式表示。R=(ΔL 1 2 +ΔL 2 2 ) 1/2 In the formula, ΔL 1 represents the dimensional change rate (%) before and after TMA in the front-back direction (first direction), and is specifically represented by the following formula.
ΔL1 ={(L1 '-L1 )/L1 }×100 (%) L1 表示實施TMA前之20℃下之前後方向長度,L1 '表示實施TMA後之20℃下之前後方向長度。ΔL 1 ={(L 1 '-L 1 )/L 1 }×100 (%) L 1 represents the length in the front-to-back direction at 20°C before performing TMA, and L 1 ' represents the length in the front-to-back direction at 20°C after performing TMA length.
式中,ΔL2 表示左右方向(第2方向)上之TMA前後之尺寸變化率(%),具體而言由下述式表示。In the formula, ΔL 2 represents the dimensional change rate (%) before and after TMA in the left-right direction (second direction), and is specifically represented by the following formula.
ΔL2 ={(L2 '-L2 )/L2 }×100 (%) L2 表示實施TMA前之20℃下之左右方向長度,L2 '表示實施TMA後之20℃下之左右方向長度。ΔL 2 ={(L 2 '-L 2 )/L 2 }×100 (%) L 2 represents the length in the left-right direction at 20°C before performing TMA, and L 2 ' represents the length in the left-right direction at 20°C after performing TMA length.
尺寸變化率ΔL1 之絕對值例如為0.50以下,較佳為0.30以下。又,尺寸變化率ΔL1 例如為-0.50以上,較佳為超過0,且例如為0.50以下,較佳為0.30以下。The absolute value of the dimensional change rate ΔL 1 is, for example, 0.50 or less, preferably 0.30 or less. Also, the dimensional change rate ΔL 1 is, for example, not less than -0.50, preferably more than 0, and is, for example, not more than 0.50, preferably not more than 0.30.
尺寸變化率ΔL2 之絕對值例如為0.50以下,較佳為0.30以下。又,尺寸變化率ΔL2 例如超過0,較佳為0.10以上,且例如為0.50以下,較佳為0.30以下。The absolute value of the dimensional change rate ΔL 2 is, for example, 0.50 or less, preferably 0.30 or less. Also, the dimensional change rate ΔL 2 is, for example, more than 0, preferably not less than 0.10, and for example, not more than 0.50, preferably not more than 0.30.
若尺寸變化率ΔL1
之絕對值、及尺寸變化率ΔL2
之絕對值分別為上述範圍,則於藉由加熱將透光性導電膜1貼附至對象物之情形時,可防止透光性導電膜1之過度收縮,可維持與加熱前之狀態接近之尺寸。尤其是若尺寸變化率ΔL1
之絕對值、及尺寸變化率ΔL2
之絕對值兩者均為上述範圍,則可更確實地將所貼附之透光性導電膜1維持為與加熱前之狀態接近之尺寸或使之大於加熱前之狀態。If the absolute value of the dimensional change rate ΔL 1 and the absolute value of the dimensional change rate ΔL 2 are within the above-mentioned ranges, when the translucent
又,尺寸變化率ΔL1
及尺寸變化率ΔL2
可為正值或負值之任一者,較佳為尺寸變化率ΔL1
及尺寸變化率ΔL2
之至少一者為正值,更佳為尺寸變化率ΔL1
及尺寸變化率ΔL2
兩者均為正值。再者,於上述尺寸變化率為正值之情形時,TMA後之透光性導電膜1之尺寸變化顯示膨脹。Also, the dimensional change rate ΔL 1 and the dimensional change rate ΔL 2 can be any one of positive or negative values, preferably at least one of the dimensional change rate ΔL 1 and the dimensional change rate ΔL 2 is a positive value, more preferably Both the dimensional change rate ΔL 1 and the dimensional change rate ΔL 2 are positive values. In addition, when the said dimensional change rate is a positive value, the dimensional change of the translucent
若各尺寸變化率之至少一者為正值,則於藉由加熱將透光性導電膜1貼附至對象物之情形時,可更確實地將所貼附之透光性導電膜1維持為與加熱前之狀態接近之尺寸。尤其是若各尺寸變化率兩者均為正值,則所貼附之透光性導電膜1由於加熱而膨脹,而可成為較加熱前之尺寸大之尺寸。因此,可將透光性導電膜1確實地貼附於對象物一整面。If at least one of the dimensional change rates is a positive value, when the light-transmitting
於TMA中,施加於透光性導電膜1之負荷為19.6 mN,測定時之透光性導電膜1(測定樣品)之大小係設為長邊(施加負荷之方向)20 mm、短邊3 mm。其他條件係依照實施例。In TMA, the load applied to the translucent
再者,於捲對捲方式之情形時,例如將搬送基材膜2之搬送方向(MD方向)設為前後方向(第1方向),將與搬送方向正交之正交方向(TD方向)設為左右方向(第2方向)(參照圖2)。Furthermore, in the case of the roll-to-roll method, for example, the conveyance direction (MD direction) of the
又,於依據JIS C 2151對透光性導電膜1實施自20℃升溫至150℃後降溫至20℃之加熱步驟(以下亦簡稱為「上述加熱步驟」)時,前後方向上之加熱前後之尺寸變化率ΔM1
之絕對值例如為0.50%以下,較佳為未達0.30%。又,尺寸變化率ΔM1
例如為-0.50%以上,較佳為-0.30%以上,且例如為0.50%以下,較佳為未達0%。In addition, when the translucent
尺寸變化率ΔM1 係將實施上述加熱步驟前之20℃下之前後方向長度設為M1 ,將實施上述加熱步驟後之20℃下之前後方向長度設為M1 '並由下述式表示。The dimensional change rate ΔM 1 is represented by the following formula, where M 1 is the length in the front-back direction at 20°C before the heating step and M 1 ′ is the length in the front-back direction at 20°C after the heating step. .
ΔM1 ={(M1 '-M1 )/M1 }×100 (%) 又,於實施上述加熱步驟時,左右方向上之加熱前後之尺寸變化率ΔM2 之絕對值例如為0.50%以下,較佳為未達0.30%,更佳為0.10%以下。又,尺寸變化率ΔM2 例如為-0.50%以上,較佳為-0.30%以上,且例如為0.50%以下,較佳為未達0%。ΔM 1 ={(M 1 ′-M 1 )/M 1 }×100 (%) In addition, when the above-mentioned heating step is performed, the absolute value of the dimensional change rate ΔM 2 in the left-right direction before and after heating is, for example, 0.50% or less , preferably less than 0.30%, more preferably less than 0.10%. Also, the dimensional change rate ΔM 2 is, for example, -0.50% or more, preferably -0.30% or more, and is, for example, 0.50% or less, preferably less than 0%.
尺寸變化率ΔM2 係將實施上述加熱步驟前之20℃下之左右方向長度設為M2 ,將實施上述加熱步驟後之20℃下之左右方向長度設為M2 '而由下述式表示。The dimensional change rate ΔM 2 is represented by the following formula, where the length in the left-right direction at 20°C before the above-mentioned heating step is taken as M 2 , and the length in the left-right direction at 20°C after the above-mentioned heating step is taken as M 2 ' .
ΔM2 ={(M2 '-M2 )/M2 }×100 (%) 又,尺寸變化率ΔM1 及尺寸變化率ΔM2 之絕對值之至少一者較佳為未達0.30%。更佳為ΔM1 之絕對值及ΔM2 之絕對值兩者均未達0.30%。ΔM 2 ={(M 2 ′−M 2 )/M 2 }×100 (%) In addition, at least one of the absolute values of the dimensional change rate ΔM 1 and the dimensional change rate ΔM 2 is preferably less than 0.30%. More preferably, neither the absolute value of ΔM 1 nor the absolute value of ΔM 2 reaches 0.30%.
依據JIS C 2151之方法係於未對透光性導電膜1施加拉伸負荷等負荷之狀態下對透光性導電膜1進行加熱之方法。The method according to JIS C 2151 is a method of heating the translucent
尺寸變化率ΔM1
及尺寸變化率ΔM2
可為正值或負值之任一者,較佳為尺寸變化率ΔM1
及尺寸變化率ΔM2
之至少一者為負值,更佳為尺寸變化率ΔM1
及尺寸變化率ΔM2
兩者均為負值。於尺寸變化率為負值之情形時,上述加熱步驟後之透光性導電膜1之尺寸變化顯示收縮。Dimensional change rate ΔM 1 and dimensional change rate ΔM 2 can be either positive or negative, preferably at least one of dimensional change rate ΔM 1 and dimensional change rate ΔM 2 is negative, more preferably dimensional change Both the rate ΔM 1 and the dimensional change rate ΔM 2 are negative values. When the dimensional change rate is a negative value, the dimensional change of the light-transmitting
透光性導電膜1之霧度(JIS K-7105)例如為2.0%以下,較佳為1.8%以下,更佳為1.5%以下,進而較佳為1.2%以下,且例如為0.1%以上。若透光性導電膜1之霧度為上述範圍內,則可較佳地用作調光用透光性導電膜。The haze (JIS K-7105) of the translucent
該透光性導電膜1可視需要實施蝕刻而將透光性導電層3圖案化成特定形狀。The light-transmitting
5.調光膜之製造方法 接下來,參照圖3對使用透光性導電膜1製造調光膜4之方法進行說明。5. Manufacturing method of light-adjusting film Next, a method of manufacturing the light-adjusting
調光膜4之製造方法例如包括:製造2片透光性導電膜1之步驟、及繼而利用2片透光性導電膜1夾住調光功能層5之步驟。The manufacturing method of the light-adjusting
首先,製造2片透光性導電膜1。再者,亦可對1片透光性導電膜1進行切斷加工而準備2片透光性導電膜1。First, two translucent
2片透光性導電膜1為第1透光性導電膜1A、及第2透光性導電膜1B。The two translucent
繼而,例如藉由濕式於第1透光性導電膜1A中之透光性導電層3之上表面(表面)形成調光功能層5。Next, the light-adjusting
例如,將液晶組合物或其溶液塗佈於第1透光性導電膜1A中之透光性導電層3之上表面而形成塗膜。液晶組合物只要為可用於調光用途者,則無限定,可列舉公知者,例如可列舉日本專利特開平8-194209號公報中所記載之液晶分散樹脂。For example, a liquid crystal composition or a solution thereof is applied to the upper surface of the light-transmitting
繼而,以第2透光性導電膜1B之透光性導電層3與塗膜接觸之方式將第2透光性導電膜1B積層於塗膜之上表面。藉此,利用2片透光性導電膜1、即第1透光性導電膜1A及第2透光性導電膜1B夾住塗膜。Next, the second light-transmitting
其後,視需要對塗膜實施適當之處理(例如熱乾燥處理、光硬化處理)而形成調光功能層5。調光功能層5係配置於第1透光性導電膜1A之透光性導電層3、與第2透光性導電膜1B之透光性導電層3之間。Thereafter, the coating film is subjected to appropriate treatment (such as thermal drying treatment, photohardening treatment) as needed to form the light-adjusting
藉此獲得依序具備第1透光性導電膜1A、調光功能層5、及第2透光性導電膜1B之調光膜4。Thereby, the
6.調光構件之製造方法 接下來,參照圖4A-D對使用調光膜4製造調光構件6之方法進行說明。6. Manufacturing method of the dimming member Next, a method of manufacturing the dimming member 6 using the
調光構件6之製造方法例如包括:於保護構件7上形成熱硬化性接著劑層8之步驟、於熱硬化性接著劑層8上配置調光膜4之步驟、及將熱硬化性接著劑層8進行加熱硬化之步驟。The manufacturing method of the dimming member 6 includes, for example: the step of forming a thermosetting
首先,如圖4A所示,準備保護構件7。保護構件7係供貼附調光膜4之對象物,例如可列舉窗玻璃、隔板、室內裝飾等。具體而言,保護構件7係使用具有適當之機械強度及厚度之硬質性透明板,例如可列舉玻璃板、強化塑膠板(例如聚碳酸酯系樹脂)等。First, as shown in FIG. 4A , the
繼而,如圖4B所示,於保護構件7上形成熱硬化性接著劑層8。例如將液狀之熱硬化性接著組合物塗佈於保護構件7之整個上表面(表面)。Next, as shown in FIG. 4B , a thermosetting
作為熱硬化性接著組合物,例如可列舉:環氧系熱硬化性接著組合物、丙烯酸系熱硬化性接著組合物等。再者,熱硬化性接著組合物只要於熱硬化後可維持調光膜4與保護構件7之貼附,則可採用任意之樹脂,不限定於上述例示。As a thermosetting adhesive composition, an epoxy-type thermosetting adhesive composition, an acryl-type thermosetting adhesive composition, etc. are mentioned, for example. Furthermore, as long as the thermosetting adhesive composition can maintain the attachment of the light-adjusting
作為塗佈方法,例如可列舉:使用敷料器之方法、灌注、流延塗佈、旋轉塗佈、輥塗等。As a coating method, the method using an applicator, pouring, cast coating, spin coating, roll coating etc. are mentioned, for example.
繼而,如圖4C所示,於熱硬化性接著劑層8上配置調光膜4。即,介隔熱硬化性接著劑層8將調光膜4配置於保護構件7之上表面。Next, as shown in FIG. 4C , the light-adjusting
此時,調光膜4係以成為與保護構件7大致相同之尺寸之方式配置。具體而言,將調光膜4以成為與保護構件7大致相同之尺寸(相同之前後方向長度及相同之左右方向長度)之方式切斷,繼而,以保護構件7之周端緣與調光膜4之周端緣於投影至上下方向時一致之方式將調光膜4配置於熱硬化性接著劑層8之上表面。At this time, the light-adjusting
繼而,如圖4D所示,將熱硬化性接著劑層8進行加熱硬化。Next, as shown in FIG. 4D , the thermosetting
加熱溫度例如為80℃以上,較佳為100℃以上,且例如為180℃以下,較佳為160℃以下。The heating temperature is, for example, 80°C or higher, preferably 100°C or higher, and for example, 180°C or lower, preferably 160°C or lower.
加熱時間例如為5分鐘以上,較佳為20分鐘以上,更佳為30分鐘以上,且例如為600分鐘以下,較佳為300分鐘以下。The heating time is, for example, 5 minutes or more, preferably 20 minutes or more, more preferably 30 minutes or more, and for example, 600 minutes or less, preferably 300 minutes or less.
加熱硬化可於大氣環境下或真空環境下實施,又,亦可施加適度之壓力。Heat hardening can be performed in an atmospheric environment or a vacuum environment, and moderate pressure can also be applied.
其後,將貼附至保護構件7之調光膜4冷卻至室溫(5~35℃)。Thereafter, the
藉此,使熱硬化性接著劑層8熱硬化而形成接著劑層8a。其結果為,調光膜4介隔接著劑層8a貼附(固著)於保護構件7。Thereby, the thermosetting
此時,透光性導電膜1、乃至調光膜4維持與加熱前之狀態接近之俯視尺寸或膨脹。再者,於調光膜4膨脹之情形時,如假想線所示,調光膜4之端部(伸出部9)自保護構件7之端緣向面方向側方伸出。即,調光膜4之周端緣較保護構件7之周端緣位於更外側。At this time, the light-transmitting
藉此,如圖4D所示,獲得具備保護構件7、設置於其上表面之接著劑層8a、及配置於接著劑層8a之上表面之調光膜4的調光構件6。Thereby, as shown in FIG. 4D , a dimming member 6 including a
其後,於調光膜4膨脹之情形時,視需要繼而如圖4D之假想線所示般將調光膜4切斷。即,將調光膜4之端部於上下方向上切斷而將調光膜4之伸出部9去除。藉此獲得保護構件7與調光膜4為大致相同之尺寸之調光構件6。Thereafter, when the light-adjusting
調光構件6藉由安裝配線(未圖示)、電源(未圖示)及控制裝置(未圖示)而例如製成電氣驅動型調光裝置(未圖示)而使用。作為電氣驅動型,可列舉電場驅動型及電流驅動型。作為一例,於電場驅動型調光裝置中,藉由配線及電源對第1透光性導電膜1A中之透光性導電層3與第2透光性導電膜1B中之透光性導電層3施加電壓,藉此於其等之間產生電場。並且,藉由基於控制裝置控制上述電場,而位於其等之間之調光功能層5成為配向狀態或不規則狀態,從而使光透過或將光遮斷(或使光散射)。The dimming member 6 is used as, for example, an electrically driven dimming device (not shown) by installing wiring (not shown), a power supply (not shown), and a control device (not shown). Examples of the electrically driven type include an electric field driven type and a current driven type. As an example, in an electric field-driven dimming device, the light-transmitting
該透光性導電膜1及調光膜4於實施20℃-160℃-20℃之熱機械分析步驟(TMA)時,面內尺寸變化率R為0.55%以下。因此,即便藉由加熱將透光性導電膜1貼附至保護構件7(對象物),透光性導電膜1亦可維持與加熱前之狀態接近之尺寸。因此,可減少未貼附於保護構件7之面積,可將所需尺寸之透光性導電膜1貼附於對象物。When the light-transmitting
雖然該機制不明確,但推測其原因在於:於藉由加熱將透光性導電膜1經由熱硬化性接著劑貼附至保護構件7之情形時、及對透光性導電膜1實施施加拉伸負荷並進行加熱之TMA之情形時,透光性導電膜1之膨脹、收縮顯示相同之行為。Although the mechanism is not clear, it is presumed that the reason is that when the light-transmitting
使用有調光膜4之調光構件6係於保護構件7之上表面(貼附面)未貼附調光膜4之面積得到減少。因此,能夠以保護構件7之大面積(尤其是於端部)具有調光功能。Using the light-adjusting member 6 with the light-adjusting
7.變化例 於圖1所示之實施形態中,於基材膜2之上表面直接配置有透光性導電層3,但例如可於基材膜2之上表面及/或下表面設置功能層,但未圖示。7. Variation In the embodiment shown in FIG. 1 , the light-transmitting
即,透光性導電膜1例如可具備基材膜2、配置於基材膜2之上表面之功能層、及配置於功能層之上表面之透光性導電層3。又,透光性導電膜1例如可具備基材膜2、配置於基材膜2之上表面之透光性導電層3、及配置於基材膜2之下表面之功能層。又,例如亦可於基材膜2之上側及下側依序具備功能層及透光性導電層3。That is, the translucent
作為功能層,可列舉易接著層、底塗層、硬塗層等。易接著層係為了提高基材膜2與透光性導電層3之密接性所設置之層。底塗層係為了調整透光性導電膜1之反射率或光學色相所設置之層。硬塗層係為了提高透光性導電膜1之耐擦傷性所設置之層。該等功能層可為單獨1種,亦可將2種以上併用。As a functional layer, an easy-adhesive layer, a primer layer, a hard coat layer, etc. are mentioned. The easy-adhesive layer is a layer provided in order to improve the adhesiveness of the
圖4D所示之實施形態中揭示了於保護構件7之上表面具備接著劑層8a及調光膜4之調光構件6,但例如亦可於調光膜4之上表面進而依序具備接著劑層8a及保護構件7,但未圖示。In the embodiment shown in FIG. 4D , the dimming member 6 is provided with the
又,亦可於將調光膜4貼附於保護構件7之前預先於調光膜4之透光性導電層3之外周部配置配線。In addition, wiring may be arranged on the outer peripheral portion of the light-transmitting
又,於圖4A-D中,調光構件6之製造方法係使用熱硬化性接著劑層8將調光膜4貼附於保護構件7,但作為接著劑層,只要藉由加熱可實現接著即可,不限定於熱硬化性接著層。例如亦可使用熱熔融性接著劑將調光膜4貼附於保護構件7,但未圖示。即,調光構件6之製造方法例如亦可包括:於保護構件7上形成熱熔融性接著劑層之步驟、於熱熔融性接著劑層上配置調光膜4之步驟、及將熱熔融性接著劑層進行加熱熔融之步驟。In addition, in Fig. 4A-D, the manufacturing method of the dimming member 6 is to use the thermosetting
作為形成熱熔融性接著劑層之方法,例如將包含熱熔融性接著組合物之片材積層於保護構件7之整個上表面。As a method of forming the hot-melt adhesive layer, for example, a sheet containing a hot-melt adhesive composition is laminated on the entire upper surface of the
作為熱熔融性接著組合物,例如可列舉:乙烯-乙酸乙烯酯系組合物、聚烯烴系組合物、聚醯胺系組合物、聚酯系組合物、聚丙烯系組合物、聚胺基甲酸酯系組合物等熱塑性樹脂組合物等。該等可為單獨1種,亦可將2種以上併用。此種熱熔融性接著組合物例如係用作熱熔接著劑。Examples of hot-melt adhesive compositions include ethylene-vinyl acetate compositions, polyolefin compositions, polyamide compositions, polyester compositions, polypropylene compositions, polyurethane compositions, Thermoplastic resin compositions such as ester-based compositions, etc. These may be used alone or in combination of two or more. Such a hot-melt adhesive composition is used, for example, as a hot-melt adhesive.
熱熔融性接著劑層之加熱溫度例如與上述熱硬化性接著劑層8之加熱溫度相同。The heating temperature of the heat-melting adhesive layer is, for example, the same as the heating temperature of the above-mentioned thermosetting
<其他實施形態> 於上述一實施形態中,例示有調光用透光性導電膜作為透光性導電膜1,但透光性導電膜例如亦可應用於調光用以外之用途。<Other Embodiments> In the above-mentioned one embodiment, the light-transmitting conductive film for light adjustment was exemplified as the light-transmitting
具體而言,透光性導電膜例如包含於圖像顯示裝置(LCD(Liquid Crystal Display,液晶顯示器)、有機EL(Electroluminescence,電致發光))等光學裝置中。透光性導電膜較佳為用作觸控面板用基材。作為觸控面板之形式,可列舉光學方式、超音波方式、靜電電容方式、電阻膜方式等各種方式,尤其是可較佳地用於靜電電容方式之觸控面板。 實施例Specifically, the light-transmitting conductive film is included in optical devices such as image display devices (LCD (Liquid Crystal Display, liquid crystal display), organic EL (Electroluminescence, electroluminescence)). A light-transmitting conductive film is preferably used as a base material for a touch panel. As a form of a touch panel, various systems, such as an optical system, an ultrasonic system, a capacitive system, and a resistive film system, can be mentioned, Especially, it can be suitably used for the touch panel of a capacitive system. Example
以下,使用實施例詳細地對本發明進行說明,本發明只要不超出其主旨,則不限定於實施例,可基於本發明之技術思想進行各種變化及變更。又,以下記載中所使用之調配比率(含有比率)、物性值、參數等具體數值可替代為上述「實施方式」中所記載之與其等對應之調配比率(含有比率)、物性值、參數等相應記載之上限(定義為「以下」、「未達」之數值)或下限(定義為「以上」、「超過」之數值)。Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the examples unless the gist is exceeded, and various changes and modifications can be made based on the technical idea of the present invention. In addition, specific numerical values such as blending ratios (content ratios), physical property values, and parameters used in the following descriptions may be replaced by corresponding blending ratios (content ratios), physical property values, parameters, etc. described in the above "embodiments" The upper limit (defined as the value of "below" or "less than") or the lower limit (defined as the value of "above" or "exceeding") of the corresponding records.
實施例1 作為透光性基材膜,準備於第1方向(搬送方向,MD)上為長條之聚對苯二甲酸乙二酯(PET)膜(厚度188 μm,雙軸延伸膜)。Example 1 A long polyethylene terephthalate (PET) film (thickness 188 μm, biaxially stretched film) was prepared as a translucent base film.
將PET膜以捲對捲方式於大氣下以170℃加熱1分鐘(預加熱)。The PET film was heated in the atmosphere at 170° C. for 1 minute in a roll-to-roll manner (preheating).
繼而,將經加熱之PET膜設置於捲對捲型濺鍍裝置中,藉由DC磁控濺鍍法形成厚度65 nm之包含非晶質ITO之透光性導電層。再者,作為濺鍍之條件,將PET膜之溫度設定為-5℃。將濺鍍時之氛圍設為導入有Ar及O2 之氣壓設為0.2 Pa之真空氛圍(流量比為Ar:O2 =100:3.3),其含水量(水分氣體/全壓)係設為0.05。作為靶,使用12質量%之氧化錫與88質量%之氧化銦之燒結體。Next, the heated PET film was set in a roll-to-roll sputtering device, and a translucent conductive layer containing amorphous ITO with a thickness of 65 nm was formed by DC magnetron sputtering. In addition, as the condition of sputtering, the temperature of the PET film was set to -5 degreeC. The atmosphere during sputtering is set as a vacuum atmosphere with Ar and O2 introduced at a pressure of 0.2 Pa (flow ratio is Ar: O2 = 100:3.3), and its water content (moisture gas / total pressure) is set as 0.05. As a target, a sintered body of 12 mass % tin oxide and 88 mass % indium oxide was used.
實施例2 將PET膜之厚度設為50 μm,將濺鍍中之PET膜之溫度設定為0℃,將濺鍍時之氛圍設為導入有Ar及O2 之氣壓設為0.4 Pa之真空氛圍(流量比為Ar:O2 =100:3.0),作為靶,使用10質量%之氧化錫與90質量%之氧化銦之燒結體,將透光性導電層之厚度設為25 nm,除此以外,以與實施例1相同之方式製造透光性導電膜。Example 2 The thickness of the PET film was set to 50 μm, the temperature of the PET film during sputtering was set to 0°C, and the atmosphere during sputtering was set to a vacuum atmosphere with Ar and O2 introduced at a pressure of 0.4 Pa. (The flow ratio is Ar:O 2 =100:3.0). As a target, a sintered body of 10% by mass tin oxide and 90% by mass indium oxide is used, and the thickness of the light-transmitting conductive layer is set to 25 nm. Except that, the translucent conductive film was produced in the same manner as in Example 1.
比較例1 不對PET膜實施預加熱,除此以外,以與實施例1相同之方式製造透光性導電膜。Comparative example 1 Except having not given preheating to the PET film, it carried out similarly to Example 1, and manufactured the translucent electroconductive film.
比較例2 將濺鍍中之PET膜之溫度設定為140℃,將含水量設定為0.005,於形成透光性導電層後進而於大氣下以170℃、2分鐘之條件實施後加熱,除此以外,以與實施例2相同之方式製造透光性導電膜。Comparative Example 2 Set the temperature of the PET film in sputtering to 140°C, set the water content to 0.005, and then heat it under the conditions of 170°C for 2 minutes under the atmosphere after forming the light-transmitting conductive layer. Except that, the translucent conductive film was produced in the same manner as in Example 2.
(評價) (1)厚度 PET膜(基材膜)之厚度係使用膜厚計(尾崎製作所公司製造,裝置名「digital dial gauge DG-205」)所測得。ITO層(透光性導電層)之厚度係藉由使用穿透式電子顯微鏡(日立製作所製造,裝置名「HF-2000」)之剖面觀察所測得。(Evaluation) (1) Thickness The thickness of the PET film (substrate film) was measured using a film thickness gauge (manufactured by Ozaki Seisakusho Co., Ltd., device name "digital dial gauge DG-205"). The thickness of the ITO layer (translucent conductive layer) was measured by cross-sectional observation using a transmission electron microscope (manufactured by Hitachi, device name "HF-2000").
(2)藉由熱機械分析(TMA)之尺寸變化之測定 將各實施例及各比較例之透光性導電膜切成長邊20 mm、短邊3 mm之短條而製成測定樣品。再者,分別於測定MD方向(第1方向)之尺寸變化之情形時,以MD方向成為長邊且TD方向(與MD方向正交之方向,第2方向)成為短邊之方式進行切斷,又,於測定TD方向之尺寸變化之情形時,以TD方向成為長邊且MD方向成為短邊之方式進行切斷。藉此,製作用以測量各方向之尺寸變化之測定樣品。(2) Measurement of dimensional change by thermomechanical analysis (TMA) The light-transmitting conductive films of each example and each comparative example were cut into strips with a length of 20 mm and a length of 3 mm to prepare measurement samples. Furthermore, when measuring the dimensional change in the MD direction (the first direction), the MD direction becomes the long side and the TD direction (the direction perpendicular to the MD direction, the second direction) becomes the short side. Also, when measuring the dimensional change in the TD direction, cutting is performed so that the TD direction becomes the long side and the MD direction becomes the short side. In this way, measurement samples for measuring dimensional changes in various directions were produced.
將測定樣品設置於熱機械分析裝置(SII Technology公司製造,「TMA/SS71000」)中,對於MD方向及TD方向各者,測定自20℃升溫至160℃,進而降溫至20℃時之尺寸變化率。Set the measurement sample in a thermomechanical analysis device (manufactured by SII Technology, "TMA/SS71000"), and measure the dimensional change when the temperature rises from 20°C to 160°C and then cools down to 20°C for each of the MD and TD directions Rate.
即,將升溫前之20℃下之MD方向長度設為L1 ,將升溫後之20℃下之MD方向長度設為L1 ',利用「{(L1 '-L1 )/L1 }×100(%)」之式算出MD方向之尺寸變化率ΔL1 (%)。又,將升溫前之20℃下之TD方向長度設為M2 ,將升溫後之20℃下之TD方向長度設為L2 ',利用「{(L2 '-L2 )/L2 }×100(%)」之式算出TD方向之尺寸變化率ΔL2 (%)。進而,利用「{(ΔL1 )2 +(ΔL2 )2 }1/2 」之式算出測定樣品整體之面內尺寸變化率R。That is, let the length in the MD direction at 20°C before the temperature increase be L 1 , and the length in the MD direction at 20°C after the temperature increase be L 1 ′ , and use “{(L 1 ′−L 1 )/L 1 } ×100(%)” to calculate the dimensional change rate ΔL 1 (%) in the MD direction. Also, let the length in the TD direction at 20°C before the temperature increase be M 2 , and the length in the TD direction at 20°C after the temperature increase be L 2 ′ , and use “{(L 2 ′−L 2 )/L 2 } ×100(%)” to calculate the dimensional change rate ΔL 2 (%) in the TD direction. Furthermore, the in-plane dimensional change rate R of the entire measurement sample was calculated using the formula "{(ΔL 1 ) 2 +(ΔL 2 ) 2 } 1/2 ".
再者,熱機械分析之條件係設為如下。In addition, the conditions of thermomechanical analysis were set as follows.
測定模式:拉伸法 負荷:19.6 mN 升溫速度:10℃/min 測定氛圍:大氣(流量200 ml/min) 夾持距離:10 mm (3)依據JIS C 2151之尺寸變化率之測定 將各實施例及各比較例之透光性導電膜切斷成MD方向(第1方向)10 cm、TD方向(與MD方向正交之方向,第2方向)10 cm而製作樣品。此時之溫度為20℃。Measuring mode: Tensile method Load: 19.6 mN Heating rate: 10°C/min Measuring atmosphere: Atmosphere (flow rate: 200 ml/min) Clamping distance: 10 mm The translucent conductive films of Examples and Comparative Examples were cut to 10 cm in the MD direction (first direction) and 10 cm in the TD direction (the direction perpendicular to the MD direction, the second direction) to prepare samples. The temperature at this time was 20°C.
依據JIS C 2151,將樣品於熱風烘箱中以150℃加熱30分鐘後,使之降溫至20℃。對於MD方向及TD方向各者測定該高溫處理後之尺寸變化率。According to JIS C 2151, the sample was heated in a hot air oven at 150°C for 30 minutes, and then cooled to 20°C. The dimensional change rate after the high-temperature treatment was measured for each of the MD direction and the TD direction.
即,將升溫前之20℃下之MD方向之長度設為M1 ,將升溫後之20℃下之MD方向長度設為M1 ',利用「{(M1 '-M1 )/M1 }×100(%)」之式算出MD方向之尺寸變化率ΔM1 (%)。又,將升溫前之20℃下之TD方向長度設為M2 ,將升溫後之20℃下之TD方向長度設為M2 ',利用「{(M2 '-M2 )/M2 }×100(%)」之式算出TD方向之尺寸變化率ΔM2 (%)。That is, the length in the MD direction at 20°C before the temperature rise is M 1 , and the length in the MD direction at 20°C after the temperature rise is M 1 ′ , using “{(M 1 ′-M 1 )/M 1 }×100(%)” to calculate the dimensional change rate ΔM 1 (%) in the MD direction. Also, let the length in the TD direction at 20°C before the temperature increase be M 2 , and the length in the TD direction at 20°C after the temperature increase be M 2 ′ , and use “{(M 2 ′-M 2 )/M 2 } ×100(%)” to calculate the dimensional change rate ΔM 2 (%) in the TD direction.
(4)向玻璃之貼附試驗 於市售之玻璃板(前後方向長度30 cm×左右方向長度25 cm)之一整面塗佈熱硬化性樹脂(丙烯酸系接著劑)。繼而,準備與玻璃板相同尺寸之實施例及各比較例之透光性導電膜,將各透光性導電膜以玻璃板之周端緣與透光性導電膜之周端緣一致之方式配置於熱硬化性接著劑之上表面,其後,於大氣環境下以150℃加熱60分鐘。藉此,將透光性導電膜貼附至玻璃板。(4) Adhesion test to glass A thermosetting resin (acrylic adhesive) was coated on the entire surface of a commercially available glass plate (30 cm in the front-back direction x 25 cm in the left-right direction). Next, the translucent conductive films of Examples and Comparative Examples having the same size as the glass plate were prepared, and each translucent conductive film was placed on the thermosetting thermosetting film in such a way that the peripheral edge of the glass plate coincided with the peripheral edge of the translucent conductive film. The upper surface of the agent was bonded, and then heated at 150° C. for 60 minutes in the atmosphere. Thereby, the translucent conductive film was attached to the glass plate.
將玻璃之一整面完全地由透光性導電性膜1覆蓋且透光性導電性膜之端部之伸出為於實用上無障礙之等級之情形評價為○,將玻璃之一面之端緣略微露出,但為於實用上無障礙之等級之情形評價為△,將玻璃之一面之端緣露出較多,為於實用上存在障礙之等級之情形評價為×。The case where the entire surface of the glass is completely covered with the translucent
再者,可知於實施例1中,所貼附之透光性導電膜較玻璃板自縱方向及橫方向略微膨脹,因此藉由將膨脹之膜端部切斷,而可於玻璃板整體貼附與玻璃板相同尺寸之透光性導電膜。Furthermore, it can be seen that in Example 1, the light-transmitting conductive film attached is slightly expanded from the longitudinal direction and the lateral direction of the glass plate, so by cutting off the end of the expanded film, it can be attached to the glass plate as a whole. Attach a light-transmitting conductive film of the same size as the glass plate.
(5)非晶質性 將實施例及各比較例之透光性導電膜於大氣環境下以80℃、20小時之條件進行加熱。其後,將經加熱之透光性導電膜於鹽酸(濃度:5質量%)中浸漬15分鐘後進行水洗、乾燥,測定各導電層之15 mm左右間之兩端子間電阻。將15 mm間之兩端子間電阻超過10 kΩ之情形判斷為非晶質並評價為○。將未超過10 kΩ之情形判斷為結晶質並評價為×。將結果示於表1。(5) Amorphous property The translucent conductive films of Examples and Comparative Examples were heated at 80° C. for 20 hours in an air environment. Thereafter, the heated translucent conductive film was immersed in hydrochloric acid (concentration: 5% by mass) for 15 minutes, washed with water, dried, and the resistance between the two terminals of each conductive layer at a distance of about 15 mm was measured. The case where the resistance between both terminals of 15 mm exceeds 10 kΩ was judged to be amorphous and evaluated as ◯. The case where it did not exceed 10 kΩ was judged to be crystalline and evaluated as x. The results are shown in Table 1.
(6)外觀 以肉眼觀察各實施例及各比較例之透光性導電膜之表面。將於膜表面完全未觀察到褶皺或條紋之情形評價為◎,將觀察到少許褶皺或條紋,但為作為調光裝置不會產生故障之等級之情形評價為○,將觀察到稍大之褶皺或條紋,但為作為調光裝置不會產生較大故障之等級之情形評價為△,將觀察到作為調光裝置無法使用之等級之褶皺或條紋之情形評價為×。將結果示於表1。(6) Appearance The surface of the translucent conductive film of each Example and each Comparative Example was observed with the naked eye. The case where no wrinkles or streaks are observed on the surface of the film is rated as ◎, the case where a few wrinkles or streaks are observed, but is rated as a level that does not cause trouble as a light control device is rated as ○, and slightly larger wrinkles are observed Or stripes, but the case of a level that does not cause major failure as a light adjustment device is evaluated as △, and the case where wrinkles or streaks of a level that cannot be used as a light adjustment device is observed is evaluated as ×. The results are shown in Table 1.
[表1]
再者,上述發明係作為本發明所例示之實施形態而提供,其只不過為例示,不能限定性地進行解釋。由該技術領域之業者明確之本發明之變化例包含於下述申請專利範圍中。 [產業上之可利用性]In addition, the above-mentioned invention is provided as the illustrated embodiment of this invention, it is only an illustration, and it cannot interpret it restrictively. Variations of the present invention that are clear to those skilled in the art are included in the following patent claims. [Industrial availability]
本發明之透光性導電膜可應用於各種工業製品,例如可較佳地應用於調光構件所具備之調光膜、或圖像顯示裝置所具備之觸控面板用基材等。The light-transmitting conductive film of the present invention can be applied to various industrial products, for example, it can be preferably applied to a light-adjusting film included in a light-adjusting member, or a base material for a touch panel included in an image display device.
1‧‧‧透光性導電膜1A‧‧‧第1透光性導電膜1B‧‧‧第2透光性導電膜2‧‧‧基材膜3‧‧‧透光性導電層4‧‧‧調光膜5‧‧‧調光功能層6‧‧‧調光構件7‧‧‧保護構件8‧‧‧熱硬化性接著劑層8a‧‧‧接著劑層9‧‧‧伸出部1‧‧‧Light-transmitting conductive film 1A‧‧‧First light-transmitting
圖1A~B表示本發明之透光性導電膜之一實施形態,圖1A表示剖視圖,圖1B表示立體圖。 圖2表示製造圖1A所示之透光性導電膜之步驟之立體圖。 圖3表示具備圖1A所示之透光性導電膜之調光膜之剖視圖。 圖4A~D係使用圖2所示之調光膜製造調光構件之步驟圖,圖4A表示準備保護構件之步驟,圖4B表示於保護構件上設置熱硬化性接著劑層之步驟,圖4C表示將調光膜配置於熱硬化性接著劑層之步驟,圖4D表示將熱硬化性接著劑層進行加熱硬化之步驟。1A to B show one embodiment of the light-transmitting conductive film of the present invention, FIG. 1A shows a cross-sectional view, and FIG. 1B shows a perspective view. FIG. 2 is a perspective view showing the steps of manufacturing the light-transmitting conductive film shown in FIG. 1A. FIG. 3 shows a cross-sectional view of a light-adjusting film provided with the light-transmitting conductive film shown in FIG. 1A . Figures 4A-D are step diagrams of manufacturing a dimming member using the dimming film shown in Figure 2, Figure 4A shows the steps of preparing a protective member, Figure 4B shows the steps of setting a thermosetting adhesive layer on the protective member, Figure 4C It shows the step of disposing the light-adjusting film on the thermosetting adhesive layer, and FIG. 4D shows the step of heating and hardening the thermosetting adhesive layer.
1‧‧‧透光性導電膜 1‧‧‧Light-transmitting conductive film
2‧‧‧基材膜 2‧‧‧Substrate film
3‧‧‧透光性導電層 3‧‧‧Light-transmitting conductive layer
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