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TWI787785B - Wafer testing method - Google Patents

Wafer testing method Download PDF

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TWI787785B
TWI787785B TW110113477A TW110113477A TWI787785B TW I787785 B TWI787785 B TW I787785B TW 110113477 A TW110113477 A TW 110113477A TW 110113477 A TW110113477 A TW 110113477A TW I787785 B TWI787785 B TW I787785B
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wafer
vacuum release
release type
type substrate
vacuum
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TW110113477A
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Chinese (zh)
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TW202224046A (en
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廖惇材
范維如
林宏毅
劉永欽
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旺矽科技股份有限公司
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Abstract

A wafer testing method adapted to test wafers is disclosed. The wafer is combined with a first vacuum-release substrate to form a wafer assembly. An attaching surface of the first vacuum-release substrate attaches a front surface of the wafer with an attaching force which is sensitive to the air pressure. The method includes transporting the wafer assembly to a first chuck and making a back surface of the first vacuum-release substrate face down and the front surface of the wafer face up. The method also includes attaching a second vacuum-release substrate to the front surface of the wafer and removing the attaching force between the first vacuum-release substrate and the wafer. The method also includes transporting the second vacuum-release substrate and the wafer to a second chuck. The method also includes eliminating the attaching force between the second vacuum-release substrate and the wafer and removing the second vacuum-release substrate to expose the front surface of the wafer. The method also includes performing a wafer test procedure to the wafer by a testing apparatus.

Description

晶圓測試方法Wafer Test Method

本發明是關於一種晶圓測試方法,特別是一種應用於薄晶圓之晶圓測試方法。 The invention relates to a wafer testing method, in particular to a wafer testing method applied to thin wafers.

晶圓表面在經過多道製程之後,除了會歷經多次熱處理,表面也會佈滿多個鍍層、走線與元件。由於晶圓、鍍層、走線以及元件彼此間的熱膨脹率均不相同,因此晶圓之表面會承受一定程度的收縮應力及/或張應力,導致產品晶圓本身均會存在一定程度的翹曲。而此種翹曲隨著晶圓之厚度變薄將更加顯著,嚴重者甚至會呈現如同「洋芋片」般的嚴重翹曲。 After the wafer surface has gone through multiple processes, in addition to undergoing multiple heat treatments, the surface will also be covered with multiple coatings, wiring and components. Due to the different thermal expansion rates of the wafer, plating, wiring and components, the surface of the wafer will bear a certain degree of shrinkage stress and/or tensile stress, resulting in a certain degree of warpage in the product wafer itself . This kind of warping will become more significant as the thickness of the wafer becomes thinner, and even severe warping like "potato chips" will appear.

實務上會需要將晶圓研磨至如此薄的情況大多是因應行動電子裝置愈來愈輕薄短小的趨勢。尤其是應用於智慧型手機中的各種晶片,包含用於人臉辨識的垂直共振腔面雷射晶片(VCSEL)、位於攝影鏡頭後方的感光元件乃至於關乎手機運作效能的系統晶片等,均需要盡可能的薄化,方能滿足後續組裝成品的厚度規格。 In practice, the fact that the wafer needs to be ground to such a thin thickness is mostly due to the trend of mobile electronic devices becoming thinner, lighter and smaller. In particular, various chips used in smartphones, including vertical cavity surface laser chips (VCSEL) for face recognition, photosensitive elements behind the camera lens, and system chips related to the operating performance of mobile phones, etc., all require Thinning as much as possible can meet the thickness specifications of subsequent assembled products.

本說明書所說的「薄晶圓」泛指厚度在200微米以下的晶圓,此厚度以下的晶圓之翹曲十分明顯,導致後續檢測程序十分難以進行。 The "thin wafer" mentioned in this specification generally refers to wafers with a thickness of less than 200 microns. Wafers with a thickness below this thickness are very obvious, which makes subsequent inspection procedures very difficult.

本發明提出一種晶圓測試方法,適用於檢測一晶圓。晶圓與 一第一真空釋放型基板構成一晶圓組件。第一真空釋放型基板具有一附著面與相對於附著面之一背面,且所述第一真空釋放型基板之附著面以一附著力附著於晶圓之背面,所述附著力對氣壓敏感。本方法包含以下步驟:以一機器手臂運送晶圓組件至一第一晶圓卡盤,其中第一真空釋放型基板之背面朝向第一晶圓卡盤,晶圓之正面朝上;以所述機器手臂或另一機器手臂運送一第二真空釋放型基板至第一晶圓卡盤的上方,並使第二真空釋放型基板之附著面朝向晶圓之正面;使第二真空釋放型基板之附著面附著於晶圓組件之晶圓之正面;以第一晶圓卡盤對晶圓組件之第一真空釋放型基板提供一負壓以去除第一真空釋放型基板與晶圓之間的附著力;以所述機器手臂或所述另一機器手臂運送第二真空釋放型基板與晶圓至一第二晶圓卡盤,並以第二晶圓卡盤對晶圓提供一吸附力;以所述機器手臂或所述另一機器手臂對第二真空釋放型基板提供一負壓以去除第二真空釋放型基板與晶圓之間的附著力;以所述機器手臂或所述另一機器手臂取出第二真空釋放型基板以露出晶圓之正面;以及以一測試裝置測試晶圓。 The invention provides a wafer testing method, which is suitable for testing a wafer. wafer with A first vacuum release type substrate constitutes a wafer assembly. The first vacuum release substrate has an attachment surface and a back surface opposite to the attachment surface, and the attachment surface of the first vacuum release substrate is attached to the back surface of the wafer with an adhesive force that is sensitive to air pressure. The method comprises the following steps: using a robotic arm to transport the wafer assembly to a first wafer chuck, wherein the back side of the first vacuum release substrate faces the first wafer chuck, and the front side of the wafer faces upward; The robot arm or another robot arm transports a second vacuum release type substrate to the top of the first wafer chuck, and makes the attachment surface of the second vacuum release type substrate face the front side of the wafer; The attachment surface is attached to the front side of the wafer of the wafer assembly; the first wafer chuck is used to provide a negative pressure on the first vacuum release type substrate of the wafer assembly to remove the adhesion between the first vacuum release type substrate and the wafer force; using the robot arm or the other robot arm to transport the second vacuum release type substrate and the wafer to a second wafer chuck, and provide an adsorption force to the wafer with the second wafer chuck; The robot arm or the other robot arm provides a negative pressure to the second vacuum release type substrate to remove the adhesion between the second vacuum release type substrate and the wafer; the robot arm or the other machine arm The arm removes the second vacuum release type substrate to expose the front side of the wafer; and tests the wafer with a testing device.

本案的其中一個特點在於提出一種嶄新晶圓檢測流程,用於解決翹曲晶圓難以進行檢測的問題。 One of the characteristics of this case is to propose a new wafer inspection process to solve the problem that warped wafers are difficult to inspect.

100:晶圓 100: Wafer

110:晶圓之正面 110: The front of the wafer

120:晶圓之背面 120: The back side of the wafer

200A:第一真空釋放型基板 200A: The first vacuum release type substrate

210A:第一真空釋放型基板之附著面 210A: Attachment surface of the first vacuum release type substrate

220A:第一真空釋放型基板之背面 220A: the back side of the first vacuum release type substrate

200B:第二真空釋放型基板 200B: Second vacuum release type substrate

210B:第二真空釋放型基板之附著面 210B: Attachment surface of the second vacuum release type substrate

220B:第二真空釋放型基板之背面 220B: the back side of the second vacuum release type substrate

300:晶圓組件 300: wafer assembly

400:機器手臂 400:Robot Arm

420:負壓 420: negative pressure

500:晶圓匣 500:Wafer Cassette

600:翹曲檢測裝置 600: Warpage detection device

601:光發射器 601: Optical transmitter

602:光接收器 602: Optical receiver

620:第一晶圓卡盤 620: The first wafer chuck

700:測試裝置 700: Test device

720:第二晶圓卡盤 720: Second wafer chuck

OP:光徑 OP: Optical path

S11~S17:步驟 S11~S17: Steps

[圖1]為本發明之晶圓測試方法的例示流程圖。 [ FIG. 1 ] is an exemplary flow chart of the wafer testing method of the present invention.

[圖2A]為晶圓組件之分解示意圖。 [FIG. 2A] is an exploded schematic diagram of a wafer assembly.

[圖2B]為晶圓組件之組合示意圖。 [FIG. 2B] is a schematic diagram of the assembly of wafer components.

[圖3A]為本發明之晶圓測試方法的作動示意圖(一)。 [FIG. 3A] is a schematic diagram (1) of the operation of the wafer testing method of the present invention.

[圖3B]為本發明之晶圓測試方法的作動示意圖(二)。 [FIG. 3B] is a schematic diagram (2) of the operation of the wafer testing method of the present invention.

[圖3C]為本發明之晶圓測試方法的作動示意圖(三)。 [FIG. 3C] is a schematic diagram (3) of the operation of the wafer testing method of the present invention.

[圖3D]為本發明之晶圓測試方法的作動示意圖(四)。 [FIG. 3D] is a schematic diagram (4) of the operation of the wafer testing method of the present invention.

[圖3E]為本發明之晶圓測試方法的作動示意圖(五)。 [FIG. 3E] is a schematic diagram (5) of the operation of the wafer testing method of the present invention.

[圖3F]為本發明之晶圓測試方法的作動示意圖(六)。 [FIG. 3F] is a schematic diagram (6) of the operation of the wafer testing method of the present invention.

[圖3G]為本發明之晶圓測試方法的作動示意圖(七)。 [FIG. 3G] is a schematic diagram (7) of the operation of the wafer testing method of the present invention.

[圖3H]為本發明之晶圓測試方法的作動示意圖(八)。 [ FIG. 3H ] is a schematic diagram (8) of the operation of the wafer testing method of the present invention.

[圖3I]為本發明之晶圓測試方法的作動示意圖(九)。 [FIG. 3I] is a schematic diagram (9) of the operation of the wafer testing method of the present invention.

[圖3J]為本發明之晶圓測試方法的作動示意圖(十)。 [FIG. 3J] is a schematic diagram (10) of the operation of the wafer testing method of the present invention.

[圖3K]為本發明之晶圓測試方法的作動示意圖(十一)。 [FIG. 3K] is a schematic diagram (11) of the operation of the wafer testing method of the present invention.

[圖3L]為本發明之晶圓測試方法的作動示意圖(十一)。 [FIG. 3L] is a schematic diagram (11) of the operation of the wafer testing method of the present invention.

[圖3M]為本發明之晶圓測試方法的作動示意圖(十一)。 [FIG. 3M] is a schematic diagram (11) of the operation of the wafer testing method of the present invention.

[圖3N]為本發明之晶圓測試方法的作動示意圖(十一)。 [FIG. 3N] is a schematic diagram (11) of the operation of the wafer testing method of the present invention.

[圖4A]為本發明之晶圓測試方法的翹曲檢測示意圖(一)。 [ FIG. 4A ] is a schematic diagram (1) of warpage detection of the wafer testing method of the present invention.

[圖4B]為本發明之晶圓測試方法的翹曲檢測示意圖(二)。 [ FIG. 4B ] is a schematic diagram (2) of warpage detection of the wafer testing method of the present invention.

在本案說明書與申請專利範圍中,「上」或「下」僅是用來說明其在圖式中所呈現的方位,並非限制其實際位向。晶圓之「正面」一詞係指半導體製程的主要加工面,亦即形成有多個半導體裝置的表面。晶圓之「背面」則是相對於晶圓之「正面」,一般是光滑表面,但部分晶圓之背面則是導電平面,例如VCSEL晶圓。 In the description of this case and the scope of the patent application, "upper" or "lower" is only used to describe its orientation shown in the drawings, not to limit its actual orientation. The term "front side" of a wafer refers to the main processing surface of the semiconductor manufacturing process, that is, the surface on which multiple semiconductor devices are formed. The "back" of the wafer is relative to the "front" of the wafer, which is generally a smooth surface, but the back of some wafers is a conductive plane, such as a VCSEL wafer.

圖式中各元件的相對大小、厚薄僅為例示,並非限制各元件 的實際相對尺寸關係。 The relative sizes and thicknesses of the components in the drawings are for illustration only, and are not intended to limit the components The actual relative size relationship.

參照圖1、圖2A與圖2B,分別為本發明之晶圓測試方法的例示流程圖以及晶圓組件之分解示意圖與組合示意圖。本發明之晶圓測試方法適用於檢測晶圓100,特別是適用於檢測厚度低於200微米的晶圓100。所述晶圓100設置於第一真空釋放型基板200A上而與第一真空釋放型基板200A共同構成一晶圓組件300。第一真空釋放型基板200A具有附著面210A與相對於附著面210A之背面220A,第一真空釋放型基板200A之附著面210A以一附著力附著於晶圓100之背面120。 Referring to FIG. 1 , FIG. 2A and FIG. 2B , they are respectively an exemplary flow chart of the wafer testing method of the present invention and an exploded schematic diagram and a schematic assembly schematic diagram of the wafer assembly. The wafer testing method of the present invention is suitable for testing the wafer 100, especially suitable for testing the wafer 100 with a thickness below 200 microns. The wafer 100 is disposed on the first vacuum release substrate 200A to form a wafer assembly 300 together with the first vacuum release substrate 200A. The first vacuum release substrate 200A has an attachment surface 210A and a back surface 220A opposite to the attachment surface 210A. The attachment surface 210A of the first vacuum release substrate 200A is attached to the back surface 120 of the wafer 100 with an adhesive force.

所述第一真空釋放型基板200A是一種廣為半導體製造業者所使用的基板,其特性在於其所提供的附著力對於氣壓敏感。當第一真空釋放型基板200A之背面220A相對於附著面210A的壓力差為零或者小於一預設值時,第一真空釋放型基板200A之附著面210A可對晶圓100之表面提供附著力。當第一真空釋放型基板200A之背面220A相對於附著面210A的壓力差大於該預設值時,則第一真空釋放型基板200A之附著面210A對晶圓100之表面所提供的附著力將大幅下降,使得第一真空釋放型基板200A可以與晶圓100相互分離。以下將配合圖式說明本發明之晶圓測試方法。 The first vacuum release type substrate 200A is a substrate widely used by semiconductor manufacturers, and its characteristic is that the adhesion provided by it is sensitive to air pressure. When the pressure difference between the back surface 220A of the first vacuum releasing substrate 200A and the attaching surface 210A is zero or less than a preset value, the attaching surface 210A of the first vacuum releasing substrate 200A can provide adhesion to the surface of the wafer 100 . When the pressure difference between the back surface 220A of the first vacuum release substrate 200A and the attachment surface 210A is greater than the preset value, the adhesion provided by the attachment surface 210A of the first vacuum release substrate 200A to the surface of the wafer 100 will be reduced. significantly lower, so that the first vacuum release type substrate 200A and the wafer 100 can be separated from each other. The wafer testing method of the present invention will be described below with reference to the drawings.

晶圓測試的生產線在收到待測晶圓產品時,通常待測晶圓產品係存放於晶圓匣中。因此在進行晶圓測試時,作業人員須先將存放於晶圓匣中的待測晶圓產品(晶圓組件300)取出放置於測試機台上進行測試。通常每個晶圓匣會存放不只一片晶圓組件300,常見係存放25片晶圓組件300。 When the wafer testing production line receives the wafer products to be tested, the wafer products to be tested are usually stored in wafer cassettes. Therefore, when performing wafer testing, the operator must first take out the wafer product to be tested (wafer assembly 300 ) stored in the wafer cassette and place it on the testing machine for testing. Usually, each wafer cassette stores more than one wafer assembly 300 , and usually stores 25 wafer assemblies 300 .

如圖3A所示,在進行晶圓測試時,首先利用機器手臂400將晶圓組件300自晶圓匣500中或者自其他用來存放晶圓組件300的特定儲存容器中取出。然後如圖3B所示,將晶圓組件300運送至第一晶圓卡盤620,並且將晶圓組件300放在第一晶圓卡盤620上(步驟S11)。在本實施例中當晶圓組件300放在第一晶圓卡盤620上時係以第一真空釋放型基板200A之背面220A朝向第一晶圓卡盤620,並且使晶圓100的正面110朝上。 As shown in FIG. 3A , when wafer testing is performed, the robot arm 400 is firstly used to take out the wafer assembly 300 from the wafer cassette 500 or from other specific storage containers for storing the wafer assembly 300 . Then, as shown in FIG. 3B , the wafer assembly 300 is transported to the first wafer chuck 620 , and the wafer assembly 300 is placed on the first wafer chuck 620 (step S11 ). In this embodiment, when the wafer assembly 300 is placed on the first wafer chuck 620, the back side 220A of the first vacuum release type substrate 200A faces the first wafer chuck 620, and the front side 110 of the wafer 100 is up.

接著如圖3C所示,以機器手臂400(或者是以另一機器手臂)吸附第二真空釋放型基板200B之背面220B以運送一第二真空釋放型基板200B至第一晶圓卡盤620的上方,並使第二真空釋放型基板200B之附著面210B朝向晶圓100之正面110。第二真空釋放型基板200B的特性與使用方式與第一真空釋放型基板200A相同,於此不再重複贅述。在此需特別說明,本發明之測試方法可以視實際產能需求而自始以單一機器手臂進行操作,或者是以二支以上的機器手臂進行操作以提高產能。 Then, as shown in FIG. 3C , the back surface 220B of the second vacuum release type substrate 200B is sucked by the robot arm 400 (or another robot arm) to transport a second vacuum release type substrate 200B to the first wafer chuck 620. above, and make the attachment surface 210B of the second vacuum release type substrate 200B face the front surface 110 of the wafer 100 . The characteristics and usage of the second vacuum-releasing substrate 200B are the same as those of the first vacuum-releasing substrate 200A, and will not be repeated here. It should be noted here that the testing method of the present invention can be operated with a single robot arm from the beginning, or with two or more robot arms to increase production capacity, depending on the actual production capacity requirements.

接著,如圖3D所示,使第二真空釋放型基板200B之附著面210B附著於晶圓100之正面110(步驟S12),然後以第一晶圓卡盤620對第一真空釋放型基板200A之背面220A提供一負壓420以去除第一真空釋放型基板200A與晶圓100之間的附著力(步驟S13)。步驟S12與步驟S13可以同步進行,或者先進行步驟S12後再執行步驟S13。 Next, as shown in FIG. 3D , attach the attachment surface 210B of the second vacuum release type substrate 200B to the front surface 110 of the wafer 100 (step S12 ), and then align the first vacuum release type substrate 200A with the first wafer chuck 620 The backside 220A provides a negative pressure 420 to remove the adhesion between the first vacuum release type substrate 200A and the wafer 100 (step S13 ). Step S12 and step S13 can be performed synchronously, or step S12 can be performed first and then step S13 can be performed.

接著,如圖3E至3F所示,機器手臂400將第二真空釋放型基板200B以及附著於第二真空釋放型基板200B上之晶圓100一同運送至第二晶圓卡盤720,然後,以第二晶圓卡盤720對晶圓100之背面120提供吸 附力(步驟S14)。在部分實施例中,第二晶圓卡盤720的表面會設置有多個流道或微孔,且各流道或微孔藉由管線連通於一真空幫浦,並藉由真空幫浦抽氣來對晶圓100之背面120施加真空吸附力。之所以必須對晶圓100之背面120提供吸附力是為了防止在晶圓100在後續步驟中因為第二真空釋放型基板200B被移除而回復成翹曲狀態。 Next, as shown in FIGS. 3E to 3F , the robotic arm 400 transports the second vacuum release type substrate 200B and the wafer 100 attached to the second vacuum release type substrate 200B to the second wafer chuck 720, and then, with The second wafer chuck 720 provides suction to the back side 120 of the wafer 100. Adhesion (step S14). In some embodiments, the surface of the second wafer chuck 720 is provided with a plurality of flow channels or microholes, and each flow channel or microholes are connected to a vacuum pump through pipelines, and are evacuated by the vacuum pump. The gas is used to apply a vacuum suction force to the back surface 120 of the wafer 100 . The reason why the suction force must be provided on the backside 120 of the wafer 100 is to prevent the wafer 100 from returning to the warped state due to the removal of the second vacuum release type substrate 200B in subsequent steps.

在完成步驟S14之後,晶圓100之正面110仍被第二真空釋放型基板200B所覆蓋,因此後續需要將第二真空釋放型基板200B移除方能對晶圓100進行測試。如圖3G所示,藉由機器手臂400對第二真空釋放型基板200B提供一負壓420便可去除第二真空釋放型基板200B與晶圓100之間的附著力(步驟S15)。然後,如圖3H所示,透過機器手臂400將第二真空釋放型基板200B取出便可使晶圓100之正面110裸露出來(步驟S16)。最後如圖3I所示,此時已可透過測試裝置700對晶圓100上的晶粒進行測試(步驟S17)。在此需特別說明,上述步驟S14與步驟S15可以同步進行,或者先進行步驟S14後再執行步驟S15。 After step S14 is completed, the front side 110 of the wafer 100 is still covered by the second vacuum release substrate 200B, so the second vacuum release substrate 200B needs to be removed to test the wafer 100 later. As shown in FIG. 3G , the robot arm 400 provides a negative pressure 420 to the second vacuum release substrate 200B to remove the adhesion between the second vacuum release substrate 200B and the wafer 100 (step S15 ). Then, as shown in FIG. 3H , the front side 110 of the wafer 100 can be exposed by taking out the second vacuum release type substrate 200B through the robotic arm 400 (step S16 ). Finally, as shown in FIG. 3I , at this time, the die on the wafer 100 can be tested through the testing device 700 (step S17 ). It should be specially noted here that the above step S14 and step S15 can be performed synchronously, or step S14 can be performed first and then step S15 can be performed.

在部分實施例中,於使第二真空釋放型基板200B之附著面210B附著於晶圓100之正面110之前,更包含執行一對位步驟,使第二真空釋放型基板200B之附著面210B與晶圓100之正面110相互對準。 In some embodiments, before the attachment surface 210B of the second vacuum release substrate 200B is attached to the front surface 110 of the wafer 100, it further includes performing an alignment step, so that the attachment surface 210B of the second vacuum release substrate 200B is aligned with the front surface 110 of the wafer 100. The front sides 110 of the wafers 100 are aligned with each other.

在部分實施例中,於運送第二真空釋放型基板200B與晶圓100至第二晶圓卡盤720之過程中,係保持晶圓100之背面120朝下,在運送過程中全程以攝影模組(例如攝影機、照相機等)持續擷取第二真空釋放型基板200B與晶圓100的影像,藉由分析影像來判斷第二真空釋放型基板200B與晶圓100之間是否存在間隙。倘若分析結果發現間隙存在,則立即 透過機器手臂翻轉第二真空釋放型基板200B與晶圓100,使晶圓100之背面120朝上並將晶圓100與第二真空釋放型基板200B運送回晶圓匣500,以避免晶圓100於運送過程中掉落。 In some embodiments, during the process of transporting the second vacuum release type substrate 200B and the wafer 100 to the second wafer chuck 720, the back side 120 of the wafer 100 is kept facing down, and the whole process of transporting is carried out with a photographic model. A group (such as a video camera, a camera, etc.) continuously captures images of the second vacuum releasing substrate 200B and the wafer 100 , and determines whether there is a gap between the second vacuum releasing substrate 200B and the wafer 100 by analyzing the images. If the analysis results show that a gap exists, immediately Flip the second vacuum release type substrate 200B and the wafer 100 through the robotic arm, make the back side 120 of the wafer 100 face up and transport the wafer 100 and the second vacuum release type substrate 200B back to the wafer cassette 500 to avoid the wafer 100 dropped during shipping.

在部分實施例中,當第二真空釋放型基板200B之附著面210B附著於晶圓100之正面110之後,機器手臂400會進行翻轉,使晶圓100之背面120朝上,且運送第二真空釋放型基板200B與晶圓100至第二晶圓卡盤720之過程中,係保持晶圓100之背面120朝上。當第二真空釋放型基板200B與晶圓100運送至第二晶圓卡盤720之上方時,機器手臂400始進行翻轉讓晶圓100之背面120朝下,藉此減少晶圓100在運送過程中掉落的風險。 In some embodiments, after the attachment surface 210B of the second vacuum-releasing substrate 200B is attached to the front surface 110 of the wafer 100, the robotic arm 400 will turn over so that the back surface 120 of the wafer 100 faces up, and transport the second vacuum During the transfer of the release substrate 200B and the wafer 100 to the second wafer chuck 720 , the back side 120 of the wafer 100 is kept facing upward. When the second vacuum release type substrate 200B and the wafer 100 are transported above the second wafer chuck 720, the robot arm 400 starts to turn over so that the back side 120 of the wafer 100 faces down, thereby reducing the time spent on the transport of the wafer 100. risk of falling.

承上,在生產線上,第二真空釋放型基板200B均有使用壽期規範,一旦使用壽期屆滿便會予以更換。因此第二真空釋放型基板200B與晶圓100運送至第二晶圓卡盤720之過程中,無論晶圓100的背面120朝上或者朝下均可符合安全規範。 As mentioned above, in the production line, the second vacuum release type substrate 200B has a service life specification, and will be replaced once the service life expires. Therefore, during the process of transporting the second vacuum release type substrate 200B and the wafer 100 to the second wafer chuck 720 , no matter whether the back side 120 of the wafer 100 is facing up or down, safety regulations can be complied with.

在部分實施例中,於放置晶圓組件300於第一晶圓卡盤620後,更包含一翹曲檢測步驟。參照圖4A與圖4B,翹曲檢測步驟係以翹曲檢測裝置600檢測晶圓100之翹曲度是否小於一翹曲門檻值。在部分實施例中,翹曲檢測裝置600係為如圖4B所示之光遮斷感測裝置,且包含光發射器601與光接收器602。光發射器601與光接收器602分別位於第一晶圓卡盤620的相對二側,且光發射器601與光接收器602之間定義一光徑OP,其中光發射器601所發出的光(例如紅外線)會沿著光徑OP行進而抵達光接收器602。光徑OP相對於晶圓100之背面120之間的垂直距離係經過預先 設定。在進行翹曲度測試時,第一晶圓卡盤620會旋轉並帶動其上的晶圓組件300跟著一起旋轉。倘若旋轉過程中光徑OP被晶圓100所遮斷,則判斷晶圓100的翹曲度高於翹曲門檻值,此時機器手臂400會將晶圓組件300傳送回晶圓匣500而不進行檢測,以免後續發生晶圓破片。倘若第一晶圓卡盤620旋轉過程中光徑OP沒有被晶圓100所遮斷,則判斷晶圓100的翹曲度低於翹曲門檻值,此時便可續行後續步驟。 In some embodiments, after placing the wafer assembly 300 on the first wafer chuck 620 , a warpage detection step is further included. Referring to FIG. 4A and FIG. 4B , in the warpage detection step, the warpage detection device 600 is used to detect whether the warpage of the wafer 100 is less than a warpage threshold. In some embodiments, the warping detection device 600 is a light interruption sensing device as shown in FIG. 4B , and includes a light emitter 601 and a light receiver 602 . The light emitter 601 and the light receiver 602 are respectively located on opposite sides of the first wafer chuck 620, and an optical path OP is defined between the light emitter 601 and the light receiver 602, wherein the light emitted by the light emitter 601 (eg, infrared rays) will travel along the optical path OP and reach the optical receiver 602 . The vertical distance between the optical path OP and the back surface 120 of the wafer 100 is pre-set set up. When performing the warpage test, the first wafer chuck 620 rotates and drives the wafer assembly 300 on it to rotate together. If the optical path OP is blocked by the wafer 100 during the rotation, it is determined that the warpage of the wafer 100 is higher than the warpage threshold, and the robot arm 400 will transfer the wafer assembly 300 back to the wafer cassette 500 without Inspection is performed to avoid subsequent wafer breakage. If the optical path OP is not blocked by the wafer 100 during the rotation of the first wafer chuck 620 , it is determined that the warpage of the wafer 100 is lower than the warpage threshold, and the subsequent steps can be continued.

在部分實施例中,翹曲檢測裝置600係為攝影模組,並透過影像辨識手段來判斷晶圓翹曲程度。攝影模組及影像辨識手段組成視覺辨識系統。 In some embodiments, the warpage detection device 600 is a camera module, and determines the degree of wafer warpage through image recognition means. The camera module and image recognition means form a visual recognition system.

在部分實施例中,於放置晶圓組件300於第一晶圓卡盤620上時,會透過設置在第一晶圓卡盤620或者是設置在機器手臂400上的壓力感測器來控制晶圓組件300接觸第一晶圓卡盤620時的壓力小於一壓力門檻值,藉此避免在放置過程中損害晶圓100。 In some embodiments, when the wafer assembly 300 is placed on the first wafer chuck 620, the wafer will be controlled through the pressure sensor disposed on the first wafer chuck 620 or the robot arm 400. The pressure when the wafer assembly 300 contacts the first wafer chuck 620 is less than a pressure threshold, thereby avoiding damage to the wafer 100 during placement.

在部分實施例中,當晶圓100完成測試之後,由於晶圓100甚薄,通常需重新將測試完畢的晶圓100與第二真空釋放型基板200B結合,以避免晶圓100在後續運輸過程中受損。此時,如圖3J所示,透過機器手臂400將第二真空釋放型基板200B之附著面210B重新附著於晶圓100之正面110上。接著,如圖3K所示,機器手臂400將第二真空釋放型基板200B與晶圓100共同運送至第一晶圓卡盤620。接著,如圖3L所示,機器手臂400使晶圓100之背面120朝下而與位在第一晶圓卡盤620上之第一真空釋放型基板200A之附著面210A相結合。接著,如圖3M與圖3N所示,機器手臂400對第二真空釋放型基板200B提供負壓以去除第二真空釋放 型基板200B與晶圓100之間的附著力,然後取出第二真空釋放型基板200B。接著,機器手臂400將晶圓組件300自第一晶圓卡盤620取出而將其運送回原先的晶圓匣500,或者是運送至用來存放測試完畢的晶圓組件300的另一晶圓匣。後續,可對另一晶圓組件300執行前述步驟,如此周而復始便可對晶圓匣500中的所有晶圓組件300完成測試。使晶圓100與第一真空釋放型基板200A相結合的步驟及去除第二真空釋放型基板200B與晶圓100之間的附著力的步驟可以同步進行,或者前者步驟先進行再執行後者步驟。 In some embodiments, after the wafer 100 is tested, because the wafer 100 is very thin, it is usually necessary to combine the tested wafer 100 with the second vacuum-released substrate 200B to prevent the wafer 100 from being transported in the subsequent transportation process. damaged in. At this time, as shown in FIG. 3J , the attachment surface 210B of the second vacuum-releasing substrate 200B is reattached to the front surface 110 of the wafer 100 through the robotic arm 400 . Next, as shown in FIG. 3K , the robotic arm 400 transports the second vacuum release type substrate 200B together with the wafer 100 to the first wafer chuck 620 . Next, as shown in FIG. 3L , the robotic arm 400 makes the backside 120 of the wafer 100 face down to combine with the attachment surface 210A of the first vacuum release type substrate 200A on the first wafer chuck 620 . Next, as shown in FIG. 3M and FIG. 3N , the robot arm 400 provides negative pressure to the second vacuum release type substrate 200B to remove the second vacuum release type substrate 200B. Adhesion between the vacuum release type substrate 200B and the wafer 100, and then take out the second vacuum release type substrate 200B. Next, the robotic arm 400 takes the wafer assembly 300 out of the first wafer chuck 620 and transports it back to the original wafer cassette 500, or transports it to another wafer used to store the tested wafer assembly 300 box. Subsequently, the aforementioned steps can be performed on another wafer assembly 300 , and all the wafer assemblies 300 in the wafer cassette 500 can be tested by repeating this cycle. The step of combining the wafer 100 with the first vacuum release type substrate 200A and the step of removing the adhesion between the second vacuum release type substrate 200B and the wafer 100 may be performed simultaneously, or the former step is performed first and the latter step is performed.

於上述實施例中,可以透過末端設置有白努力吸盤、真空吸盤或者其他可用以吸附基板表面的端末作用器的機器手臂來運送晶圓組件或者第一/第二真空釋放型基板。需要注意的是,本案所指的機械手臂泛指可以用於運送晶圓組件或者第一/第二真空釋放型基板的機構或系統。於部分實施例中,在使真空釋放型基板與晶圓100之表面相結合的過程中,須藉由機器手臂400施加下壓力,且所施加的下壓力係控制在一上極限值與一下極限值之間。倘若施加的力道過大,將會造成晶圓100受損,倘若施加的力道過小,則真空釋放型基板之附著面可能會沒有完整貼附於晶圓100之表面,使其施加於晶圓100的附著力不足,導致晶圓100與真空釋放型基板可能在後續加工或運送過程中相互分離。 In the above-mentioned embodiments, the wafer assembly or the first/second vacuum release type substrate can be transported by a robotic arm with a Bernoulli chuck, a vacuum chuck or other end effectors capable of absorbing the surface of the substrate. It should be noted that the robotic arm referred to in this case generally refers to a mechanism or system that can be used to transport wafer assemblies or first/second vacuum release substrates. In some embodiments, in the process of combining the vacuum release type substrate with the surface of the wafer 100, a downward force must be applied by the robot arm 400, and the applied downward force is controlled between an upper limit and a lower limit. value between. If the applied force is too large, the wafer 100 will be damaged. If the applied force is too small, the attachment surface of the vacuum release type substrate may not be completely attached to the surface of the wafer 100, so that it is applied to the surface of the wafer 100. Insufficient adhesion may cause the wafer 100 and the vacuum release substrate to be separated from each other during subsequent processing or transportation.

雖然本發明已以實施例揭露如上然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之專利申請範圍所界定者為準。 Although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention shall be defined by the scope of the attached patent application.

S11~S17:步驟 S11~S17: Steps

Claims (14)

一種晶圓測試方法,適用於檢測一晶圓,該晶圓與一第一真空釋放型基板構成一晶圓組件,該第一真空釋放型基板具有一附著面與相對於該附著面之一背面,該第一真空釋放型基板之附著面以一附著力附著於該晶圓之背面,該附著力對氣壓敏感,該晶圓測試方法包含:以一機器手臂運送該晶圓組件至一第一晶圓卡盤,其中該第一真空釋放型基板之背面朝向該第一晶圓卡盤,該晶圓之正面朝上;以該機器手臂或另一機器手臂運送一第二真空釋放型基板至該第一晶圓卡盤的上方,並使該第二真空釋放型基板之附著面朝向該晶圓之正面;使該第二真空釋放型基板之附著面附著於該晶圓組件之晶圓之正面;以該第一晶圓卡盤對該晶圓組件之第一真空釋放型基板提供一負壓以去除該第一真空釋放型基板與該晶圓之間的附著力;以該機器手臂或該另一機器手臂運送該第二真空釋放型基板與該晶圓至一第二晶圓卡盤,並以該第二晶圓卡盤對該晶圓提供一吸附力;以該機器手臂或該另一機器手臂對該第二真空釋放型基板提供一負壓以去除該第二真空釋放型基板與該晶圓之間的附著力;以該機器手臂或該另一機器手臂取出該第二真空釋放型基板以露出該晶圓之正面;以及以一測試裝置測試該晶圓。 A wafer testing method suitable for testing a wafer which constitutes a wafer assembly with a first vacuum release type substrate, the first vacuum release type substrate having an attachment surface and a back surface opposite to the attachment surface , the attachment surface of the first vacuum-releasing substrate is attached to the back surface of the wafer with an adhesive force, the adhesive force is sensitive to air pressure, and the wafer testing method includes: transporting the wafer assembly to a first vacuum-released substrate with a robotic arm wafer chuck, wherein the back side of the first vacuum release type substrate faces the first wafer chuck, and the front side of the wafer faces up; transporting a second vacuum release type substrate to the robot arm or another robot arm above the first wafer chuck, and make the attachment surface of the second vacuum release type substrate face the front of the wafer; make the attachment surface of the second vacuum release type substrate attach to the wafer of the wafer assembly front side; using the first wafer chuck to provide a negative pressure to the first vacuum release type substrate of the wafer assembly to remove the adhesion between the first vacuum release type substrate and the wafer; using the robotic arm or The other robotic arm transports the second vacuum release type substrate and the wafer to a second wafer chuck, and uses the second wafer chuck to provide a suction force on the wafer; the robotic arm or the wafer Another robot arm provides a negative pressure to the second vacuum release type substrate to remove the adhesion between the second vacuum release type substrate and the wafer; take out the second vacuum with the robot arm or the other robot arm releasing the substrate to expose the front side of the wafer; and testing the wafer with a testing device. 如請求項1所述之晶圓測試方法,該機器手臂係自一晶圓匣中取出該晶圓組件而將該晶圓組件運送至該第一晶圓卡盤上。 In the wafer testing method described in Claim 1, the robotic arm takes out the wafer assembly from a wafer cassette and transports the wafer assembly to the first wafer chuck. 如請求項1所述之晶圓測試方法,於運送該晶圓組件至該第一晶圓卡盤之過程中,該機器手臂係吸附於該晶圓組件之第一真空釋放型基板之背面。 According to the wafer testing method described in Claim 1, during the process of transporting the wafer assembly to the first wafer chuck, the robotic arm is adsorbed to the back surface of the first vacuum release type substrate of the wafer assembly. 如請求項1所述之晶圓測試方法,於使該第二真空釋放型基板之附著面附著於該晶圓組件之晶圓之正面之步驟前,更包含:執行一對位步驟,使該第二真空釋放型基板之附著面與該晶圓之正面相互對準。 The wafer testing method as described in Claim 1, before the step of attaching the attachment surface of the second vacuum release type substrate to the front surface of the wafer of the wafer assembly, further includes: performing an alignment step, so that the The attachment surface of the second vacuum release substrate is aligned with the front side of the wafer. 如請求項1所述之晶圓測試方法,於運送該第二真空釋放型基板與該晶圓至該第二晶圓卡盤之步驟中,係保持該晶圓之背面朝下,該方法更包含:以一攝影模組擷取該第二真空釋放型基板與該晶圓之一影像;及分析該影像以判斷該第二真空釋放型基板與該晶圓之間是否存在一間隙,倘若該間隙存在,則以該機器手臂翻轉該第二真空釋放型基板與該晶圓,使該晶圓之背面朝上。 In the wafer testing method described in claim 1, in the step of transporting the second vacuum release type substrate and the wafer to the second wafer chuck, the back side of the wafer is kept facing down, and the method is further comprising: capturing an image of the second vacuum-releasing substrate and the wafer with a camera module; and analyzing the image to determine whether there is a gap between the second vacuum-releasing substrate and the wafer, if the If there is a gap, the robotic arm is used to turn over the second vacuum-releasing substrate and the wafer so that the back side of the wafer faces upward. 如請求項1所述之晶圓測試方法,於放置該晶圓組件於該第一晶圓卡盤後,更包含:以一翹曲檢測裝置檢測該晶圓之翹曲度是否小於一翹曲門檻值,若該晶圓之翹曲度小於該翹曲門檻值,始以該機器手臂或該另一機器手臂運送該第二真空釋放型基板至該第一晶圓卡盤的上方。 The wafer testing method as described in claim 1, after placing the wafer assembly on the first wafer chuck, further includes: using a warpage detection device to detect whether the warpage of the wafer is less than a warpage threshold value, if the warp degree of the wafer is less than the warp threshold value, the robot arm or the other robot arm is used to transport the second vacuum release type substrate to the top of the first wafer chuck. 如請求項6所述之晶圓測試方法,其中,該翹曲檢測裝置係為一光遮斷感測裝置。 The wafer testing method according to Claim 6, wherein the warpage detection device is a light interruption sensing device. 如請求項7所述之晶圓測試方法,其中,於檢測該晶圓之翹曲度之步驟包含:設置該光遮斷感測裝置之一光發射器與一光接收器於該第一晶圓卡盤之相對二側,該光發射器與該光接收器之間定義一光徑;及旋轉該第一晶圓卡盤,若該光徑於該第一晶圓卡盤的旋轉過程中未被該晶圓遮斷,則判斷該晶圓之翹曲度小於該翹曲門檻值。 The wafer testing method as described in Claim 7, wherein the step of detecting the warpage of the wafer includes: arranging a light emitter and a light receiver of the light interruption sensing device on the first wafer Opposite sides of the round chuck, an optical path is defined between the optical emitter and the optical receiver; and rotating the first wafer chuck, if the optical path is during the rotation of the first wafer chuck If it is not blocked by the wafer, it is determined that the warpage of the wafer is less than the warpage threshold. 如請求項1所述之晶圓測試方法,其中,於使該第二真空釋放型基板之附著面附著於該晶圓之正面的步驟中,更包含:沿該第二真空釋放型基板之附著面的一垂直方向對該晶圓施加一壓力以使該第二真空釋放型基板之附著面附著於該晶圓之正面。 The wafer testing method as described in Claim 1, wherein, in the step of attaching the attachment surface of the second vacuum release type substrate to the front side of the wafer, further comprising: attaching the second vacuum release type substrate along the A direction perpendicular to the surface applies a pressure to the wafer so that the attachment surface of the second vacuum release substrate is attached to the front surface of the wafer. 如請求項9所述之晶圓測試方法,其中,該機器手臂或該另一機器手臂沿該垂直方向向下移動對該晶圓施加該壓力。 The wafer testing method as claimed in claim 9, wherein the robot arm or the other robot arm moves downward along the vertical direction to exert the pressure on the wafer. 如請求項9所述之晶圓測試方法,其中,該第一晶圓卡盤沿該垂直方向向上移動以對該晶圓施加該壓力。 The wafer testing method as claimed in claim 9, wherein the first wafer chuck moves upward along the vertical direction to apply the pressure to the wafer. 如請求項1所述之晶圓測試方法,其中,於使該第二真空釋放型基板之附著面附著於該晶圓之正面的步驟前,更包含:執行一對位步驟,使該第二真空釋放型基板對準該晶圓。 The wafer testing method as described in Claim 1, wherein, before the step of attaching the attachment surface of the second vacuum release type substrate to the front surface of the wafer, it further includes: performing an alignment step, so that the second A vacuum release type substrate is aligned to the wafer. 如請求項1所述之晶圓測試方法,於該測試裝置測試該晶圓後,更包含:該機器手臂或該另一機器手臂運送該第二真空釋放型基板至該第二晶圓卡盤的上方,並使該第二真空釋放型基板之附著面朝向該晶圓之正面; 使該第二真空釋放型基板之附著面附著於該晶圓之正面;去除該第二晶圓卡盤與該晶圓之間的吸附力;以該機器手臂或該另一機器手臂運送該第二真空釋放型基板與該晶圓至該第一晶圓卡盤的上方,且該晶圓之背面朝下;使位於該第一晶圓卡盤上之該第一真空釋放型基板之附著面附著於該晶圓之背面;以該機器手臂或該另一機器手臂對該第二真空釋放型基板提供一負壓以去除該第二真空釋放型基板與該晶圓之間的附著力;以該機器手臂或該另一機器手臂取出該第二真空釋放型基板;以及以該機器手臂或該另一機器手臂自該第一晶圓卡盤取出該晶圓組件。 The wafer testing method as described in claim 1, after the testing device tests the wafer, further comprising: the robot arm or the other robot arm transports the second vacuum release type substrate to the second wafer chuck above, and make the attachment surface of the second vacuum release type substrate face the front side of the wafer; making the attachment surface of the second vacuum release type substrate attached to the front side of the wafer; removing the adsorption force between the second wafer chuck and the wafer; transporting the first robot arm or the other robot arm Two vacuum release type substrates and the wafer are placed above the first wafer chuck, and the back side of the wafer is facing down; the attachment surface of the first vacuum release type substrate located on the first wafer chuck is attaching to the back side of the wafer; using the robotic arm or the other robotic arm to provide a negative pressure to the second vacuum-releasing substrate to remove the adhesion between the second vacuum-releasing substrate and the wafer; The robot arm or the other robot arm takes out the second vacuum release type substrate; and the robot arm or the other robot arm takes out the wafer assembly from the first wafer chuck. 如請求項13所述之晶圓測試方法,其中,於自該第一晶圓卡盤取出該晶圓組件後更包含:以該機器手臂或該另一機器手臂運送該晶圓組件至一晶圓匣。 The wafer testing method as described in claim 13, wherein, after taking out the wafer assembly from the first wafer chuck, it further includes: using the robot arm or the other robot arm to transport the wafer assembly to a wafer round box.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200834255A (en) * 2006-12-07 2008-08-16 Nikon Corp Exposure apparatus and conveyance apparatus
TW201029902A (en) * 2009-02-05 2010-08-16 Au Optronics Corp Turnover apparatus and method for turning over substrate
US20130343841A1 (en) * 2003-11-10 2013-12-26 Brooks Automation, Inc. Semiconductor manufacturing systems
TW201618224A (en) * 2014-11-14 2016-05-16 Ming-Sheng Chen Substrate platform mechanism
US20160332301A1 (en) * 2015-05-13 2016-11-17 Boris Kesil Method of handling and transporting flat objects between a plurality of flat object pocessing units at robotic station
TW201911458A (en) * 2017-08-07 2019-03-16 煜峰投資顧問有限公司 A substrate transportation system and a method for transporating a substrate by using thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130343841A1 (en) * 2003-11-10 2013-12-26 Brooks Automation, Inc. Semiconductor manufacturing systems
TW200834255A (en) * 2006-12-07 2008-08-16 Nikon Corp Exposure apparatus and conveyance apparatus
TW201029902A (en) * 2009-02-05 2010-08-16 Au Optronics Corp Turnover apparatus and method for turning over substrate
TW201618224A (en) * 2014-11-14 2016-05-16 Ming-Sheng Chen Substrate platform mechanism
US20160332301A1 (en) * 2015-05-13 2016-11-17 Boris Kesil Method of handling and transporting flat objects between a plurality of flat object pocessing units at robotic station
TW201911458A (en) * 2017-08-07 2019-03-16 煜峰投資顧問有限公司 A substrate transportation system and a method for transporating a substrate by using thereof

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