TWI785801B - Method and system for testing radiation susceptibility - Google Patents
Method and system for testing radiation susceptibility Download PDFInfo
- Publication number
- TWI785801B TWI785801B TW110134364A TW110134364A TWI785801B TW I785801 B TWI785801 B TW I785801B TW 110134364 A TW110134364 A TW 110134364A TW 110134364 A TW110134364 A TW 110134364A TW I785801 B TWI785801 B TW I785801B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- under test
- reference voltage
- device under
- radiation
- Prior art date
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 96
- 230000005855 radiation Effects 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000008878 coupling Effects 0.000 claims abstract description 50
- 238000010168 coupling process Methods 0.000 claims abstract description 50
- 238000005859 coupling reaction Methods 0.000 claims abstract description 50
- 238000005259 measurement Methods 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 230000035945 sensitivity Effects 0.000 claims description 24
- 230000000875 corresponding effect Effects 0.000 claims description 9
- 238000012937 correction Methods 0.000 claims description 3
- 230000002596 correlated effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Images
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
本發明關於一種測試輻射敏感度之方法及系統,尤指可模擬輻射波對於受測裝置之影響的測試輻射敏感度之方法及系統。 The present invention relates to a method and system for testing radiation sensitivity, in particular to a method and system for testing radiation sensitivity that can simulate the influence of radiation waves on a device under test.
對於電子設備而言,例如電腦或伺服器,輻射敏感度(radiated susceptibility,RS)之測試至關重要。由於電磁場無處不在,若無法通過輻射敏感度測試,電子設備可能會受到輻射波之侵擾而導致功能性的故障及損壞。 For electronic equipment, such as computers or servers, the test of radiated susceptibility (RS) is very important. Due to the ubiquity of electromagnetic fields, if the radiation sensitivity test fails, the electronic equipment may be disturbed by radiation waves, resulting in functional failure and damage.
目前,為了測試輻射敏感性,須將電子設備放在電波暗室(Anechoic chamber),發射電波至電子設備,再測量電子設備受到的影響。若產生的結果為未通過,則須以試錯(trial and error)方式,讓工程人員進入電波暗室,調整設定,再反覆執行相關操作,以進行分析或除錯。 At present, in order to test the radiation susceptibility, the electronic equipment must be placed in an anechoic chamber, and radio waves are emitted to the electronic equipment, and then the impact on the electronic equipment is measured. If the result is not passed, it is necessary to use trial and error (trial and error) methods to allow engineering personnel to enter the anechoic chamber, adjust the settings, and then perform relevant operations repeatedly for analysis or debugging.
此過程須消耗大量的場地資源、操作時間,也不易找出發生錯誤的根本原因。此外,由於工程人員須時常進入高輻射區域,故也不利於工程人員的安全與健康。 This process consumes a lot of site resources and operating time, and it is not easy to find out the root cause of the error. In addition, since engineering personnel must often enter high-radiation areas, it is not conducive to the safety and health of engineering personnel.
實施例提供一種測試輻射敏感度之方法,包含發射一輻射波至一受測裝置;測量該受測裝置以根據該輻射波測得一第一電壓;輸出一參考電壓至一耦合裝置,以使該耦合裝置根據該參考電壓產生一第二電壓;調整該參考電壓以使該第二電壓近似於該第一電壓;儲存調整後的該參考電壓;及根據調整後的該參考電壓輸出該第二電壓至該受測裝置以模擬該輻射波對於該受測裝置 之影響。 The embodiment provides a method for testing radiation sensitivity, including transmitting a radiation wave to a device under test; measuring the device under test to obtain a first voltage according to the radiation wave; outputting a reference voltage to a coupling device, so that The coupling device generates a second voltage according to the reference voltage; adjusts the reference voltage so that the second voltage is close to the first voltage; stores the adjusted reference voltage; and outputs the second voltage according to the adjusted reference voltage voltage to the device under test to simulate the radiation wave for the device under test influence.
實施例提供一種測試輻射敏感度之系統,包含一耦合裝置、一訊號產生器及一受測裝置。該耦合裝置包含一第一端、一第二端及一第三端,其中該第一端用以接收一參考電壓,且該第二端用以根據該參考電壓輸出對應於一第一電壓之一第二電壓。該訊號產生器耦接於該耦合裝置之該第一端,用以輸出該參考電壓。該受測裝置耦接至該耦合裝置之該第二端,用以接收該第二電壓。當一輻射波施加於該受測裝置時可測得該第一電壓,且該參考電壓係被設定以使該第二電壓近似於該第一電壓以模擬該輻射波對於該受測裝置之影響。 The embodiment provides a system for testing radiation sensitivity, which includes a coupling device, a signal generator and a device under test. The coupling device includes a first end, a second end and a third end, wherein the first end is used to receive a reference voltage, and the second end is used to output a signal corresponding to a first voltage according to the reference voltage a second voltage. The signal generator is coupled to the first end of the coupling device for outputting the reference voltage. The device under test is coupled to the second end of the coupling device for receiving the second voltage. The first voltage can be measured when a radiation wave is applied to the device under test, and the reference voltage is set so that the second voltage is close to the first voltage to simulate the influence of the radiation wave on the device under test .
110:電波暗室 110:Anechoic chamber
ANT:天線 ANT: Antenna
W:輻射波 W: radiation wave
EUT:受測裝置 EUT: Equipment under test
MD:測量裝置 MD: measuring device
FC:法拉第籠 FC: Faraday Cage
CT:耦合裝置 CT: coupling device
VRS:第一電壓 VRS: first voltage
SG:訊號產生器 SG: signal generator
PD:週邊控制裝置 PD: peripheral control device
Vi:參考電壓 Vi: reference voltage
P1:第一端 P1: first end
P2:第二端 P2: the second end
P3:第三端 P3: the third end
V’RS:第二電壓 V'RS: the second voltage
300:方法 300: method
310至360,510至530:步驟 310 to 360, 510 to 530: STEP
400:系統 400: system
T,T1,T2:工作桌 T, T1, T2: work table
Sr:測量結果 Sr: measurement result
Sc1:第一控制訊號 Sc1: the first control signal
Sc2:第二控制訊號 Sc2: Second control signal
610:扼流電路 610: Choke circuit
A:放大器 A: Amplifier
C:轉接器 C: Adapter
第1圖為實施例中,施加輻射波至受測裝置的示意圖。 Fig. 1 is a schematic diagram of applying radiation waves to the device under test in the embodiment.
第2圖為實施例中,模擬輻射波對於受測裝置之影響的示意圖。 Fig. 2 is a schematic diagram of the influence of the simulated radiation wave on the device under test in the embodiment.
第3圖為實施例中,測試輻射敏感度之方法的流程圖。 Fig. 3 is a flowchart of a method for testing radiation sensitivity in an embodiment.
第4圖為實施例中,測試輻射敏感度之系統的示意圖。 Fig. 4 is a schematic diagram of a system for testing radiation sensitivity in an embodiment.
第5圖為使用第4圖之系統,測試輻射敏感度的流程圖。 Fig. 5 is a flow chart of testing radiation sensitivity using the system in Fig. 4 .
第6圖為第2圖及第4圖之耦合裝置的示意圖。 Fig. 6 is a schematic diagram of the coupling device in Fig. 2 and Fig. 4 .
為了改善前述的缺失,實施例可提供測試輻射敏感度之系統及方法,如下文所述。 In order to improve the aforementioned deficiencies, embodiments may provide a system and method for testing radiation sensitivity, as described below.
根據實施例,可先於電波暗室中,以天線發射輻射波至受測裝置,並量測受測裝置以得到對應的第一電壓,而根據天線發射輻射波的頻率之高低(例如,100MHz、125MHz、250MHz、400MHz及1,000MHz等)量測受測裝置 會取得不同的第一電壓。之後,再以訊號產生器提供參考電壓,以透過耦合裝置據以產生第二電壓以施加於受測裝置。訊號產生器所產生的參考電壓可被調整,以使第二電壓近似於第一電壓。調整後的參考電壓可儲存備用;之後,則不須再使用電波暗室,而可使用儲存的參考電壓,再透過耦合裝置產生第二電壓,施加於受測裝置,以模擬輻射波對受測裝置的影響。 According to an embodiment, the antenna can be used to transmit radiation waves to the device under test in the anechoic chamber, and the device under test can be measured to obtain the corresponding first voltage, and according to the frequency of the radiation waves emitted by the antenna (for example, 100MHz, 125MHz, 250MHz, 400MHz and 1,000MHz, etc.) measurement of the device under test Different first voltages will be obtained. Afterwards, the signal generator is used to provide a reference voltage to generate a second voltage through the coupling device to apply to the device under test. The reference voltage generated by the signal generator can be adjusted so that the second voltage is close to the first voltage. The adjusted reference voltage can be stored for later use; after that, it is no longer necessary to use the anechoic chamber, but the stored reference voltage can be used, and then the second voltage is generated through the coupling device and applied to the device under test to simulate the impact of radiation waves on the device under test. Impact.
第1圖為實施例中,施加輻射波W至受測裝置EUT的示意圖。第2圖為實施例中,模擬輻射波W對於受測裝置EUT之影響的示意圖。第3圖為實施例中,測試輻射敏感度之方法300的流程圖。第1圖可對應於第3圖之步驟310至320,第2圖可對應於第3圖之步驟330至360。如第1圖至第3圖所示,方法300可包含以下步驟:步驟310:天線ANT發射輻射波W至受測裝置EUT;步驟320:測量裝置MD測量受測裝置EUT以根據輻射波W測得第一電壓VRS;步驟330:輸出參考電壓Vi至耦合裝置CT,以使耦合裝置CT根據參考電壓Vi產生一第二電壓V’RS;步驟340:調整參考電壓Vi以使第二電壓V’RS近似於第一電壓VRS;步驟350:儲存調整後的參考電壓Vi;及步驟360:根據調整後的參考電壓Vi輸出第二電壓V’RS至受測裝置EUT,以模擬輻射波W對於受測裝置EUT之影響。
FIG. 1 is a schematic diagram of applying radiation waves W to the device under test EUT in the embodiment. Fig. 2 is a schematic diagram of the influence of the simulated radiation wave W on the device under test EUT in the embodiment. FIG. 3 is a flowchart of a
如第1圖所示,步驟310至320可於電波暗室110中進行,其中天線ANT發射的輻射波W根據測試之需求可具有預定頻率。舉例而言,測量裝置MD可為示波器,例如數位儲存示波器(DSO)。於第1圖中,測量裝置MD可置於法拉第籠(Faraday cage)FC之中,以避免被輻射波影響。受測裝置EUT可包含網路纜線(CAT cable)及網路接頭,舉例而言,網路纜線可為CAT 5E纜線,網路接頭
可為RJ45 LAN接頭。因此,可測試網路纜線及接頭的輻射敏感度。根據實施例,第1圖中,測量裝置MD及受測裝置EUT可置於工作桌T上。工作桌T可具有絕緣性,例如為木桌,以符合測試相關的規範。
As shown in FIG. 1 ,
經量測及計算,可證實第二電壓V’RS確可模擬第一電壓VRS,僅於波形具有相位差,因此,以第二電壓V’RS模擬輻射波W之影響,具有可行性及準確度。 After measurement and calculation, it can be verified that the second voltage V'RS can indeed simulate the first voltage VRS, and only the waveform has a phase difference. Therefore, it is feasible and accurate to use the second voltage V'RS to simulate the influence of the radiation wave W Spend.
如第2圖所示,步驟330至350中,可使用耦合裝置CT及訊號產生器SG以產生第二電壓V’RS,以模擬輻射波W之影響。如第2圖所示,耦合裝置CT可包含第一端P1、第二端P2及第三端P3,其中第一端P1可接收參考電壓Vi,第二端P2可根據參考電壓Vi輸出對應於第一電壓VRS(示於第1圖)之第二電壓V’RS,第三端P3可耦接於週邊控制裝置PD,以存取第一控制訊號Sc1。關於第一控制訊號Sc1,將述於後文。由於耦合裝置CT具有第一端P1至第三端P3,故耦合裝置CT可為三埠耦合裝置。
As shown in FIG. 2, in
訊號產生器SG可耦接於耦合裝置CT之第一端P1,以輸出參考電壓Vi。受測裝置EUT可耦接至耦合裝置CT之第二端P2,以接收第二電壓V’RS。根據實施例,第二電壓V’RS可正相關於第一電壓VRS及校正因數(correction factor)CF之和,例如等式eq-1所示:Vi=V’RS+CF...eq-1 The signal generator SG can be coupled to the first terminal P1 of the coupling device CT to output the reference voltage Vi. The device under test EUT can be coupled to the second terminal P2 of the coupling device CT to receive the second voltage V'RS. According to an embodiment, the second voltage V'RS may be positively related to the sum of the first voltage VRS and a correction factor (correction factor) CF, as shown in the equation eq-1: Vi=V'RS+CF...eq- 1
如步驟340至350所示,由於步驟320中已求得第一電壓VRS,故可調整參考電壓Vi,以使第二電壓V’RS近似於第一電壓VRS。舉例而言,第一電壓VRS及第二電壓V’RS的差異可不大於第一電壓VRS的10%、5%或1%。如步驟360所述,可根據調整後的參考電壓Vi輸出第二電壓V’RS至受測裝置EUT,以模擬輻射波W對於受測裝置EUT之影響。
As shown in
根據實施例,步驟310至350可重複執行,以取得對應於相異頻率的
參考電壓Vi。舉例而言,步驟310中,輻射波W可具有第一頻率,故步驟340至350中,調整後的參考電壓Vi可對應於該第一頻率。之後,可將輻射波W由第一頻率調整第二頻率,以另求得對應於第二頻率之參考電壓Vi,依此類推。
According to an embodiment, steps 310 to 350 may be repeatedly performed to obtain
Reference voltage Vi. For example, in
藉由多次校準及操作,可得到多個頻率與多個參考電壓Vi之對照表,之後,若欲對於受測裝置EUT施加預定頻率的輻射波W,則可直接以第2圖的方式,使用對應的參考電壓Vi輸出第二電壓V’RS至受測裝置EUT以進行模擬。舉例而言,對照表之多個參考電壓Vi所對應的多個頻率可介於數十至數百百萬赫茲(MHz),但小於1吉赫茲(GHz),以避免頻率過高時,雜訊比例過多。根據實施例,第2圖中,週邊控制裝置PD、耦合裝置CT及受測裝置EUT之間可使用局部區域網路(Local Area Network,LAN)之資料傳輸。 Through multiple calibrations and operations, a comparison table of multiple frequencies and multiple reference voltages Vi can be obtained. After that, if you want to apply a radiation wave W of a predetermined frequency to the device under test EUT, you can directly use the method in Figure 2, Using the corresponding reference voltage Vi to output the second voltage V'RS to the device under test EUT for simulation. For example, the multiple frequencies corresponding to the multiple reference voltages Vi of the look-up table can range from tens to hundreds of million hertz (MHz), but less than 1 gigahertz (GHz), so as to avoid confusion when the frequency is too high. Too many messages. According to the embodiment, in FIG. 2 , the data transmission of the peripheral control device PD, the coupling device CT and the device under test EUT may use a local area network (Local Area Network, LAN).
第4圖為實施例中,測試輻射敏感度之系統400的示意圖。系統400可包含第2圖所示的耦合裝置CT、訊號產生器SG、受測裝置EUT、週邊控制裝置PD及測量裝置MD。週邊控制裝置PD可耦接於耦合裝置CT之第三端P3,用以存取第一控制訊號Sc1。測量裝置MD可耦接於週邊控制裝置PD及受測裝置EUT,用以於測量裝置MD及週邊控制裝置PD之間存取第二控制訊號Sc2,及當耦合裝置CT輸出第二電壓V’RS至受測裝置EUT時,測量受測裝置EUT以得到測量結果Sr。
FIG. 4 is a schematic diagram of a
根據實施例,第一控制訊號Sc1可相關於第二控制訊號Sc2,第二控制訊號Sc2可相關於測量結果Sr。第一控制訊號Sc1及第二控制訊號Sc2可用以執行相關的控制及資料傳輸。測量結果Sr係對應於所模擬之輻射波W對於受測裝置EUT之影響。因此,可根據測量結果Sr,分析輻射波W對於受測裝置EUT之影響與干擾。 According to an embodiment, the first control signal Sc1 may be correlated with the second control signal Sc2, and the second control signal Sc2 may be correlated with the measurement result Sr. The first control signal Sc1 and the second control signal Sc2 can be used to perform related control and data transmission. The measurement result Sr corresponds to the effect of the simulated radiation wave W on the device under test EUT. Therefore, the influence and interference of the radiation wave W on the device under test EUT can be analyzed according to the measurement result Sr.
根據實施例,如第4圖所示,系統400可選擇性地包含轉接器C,耦接於週邊控制裝置PD及測量裝置MD之間。舉例而言,轉接器C可為通用串列匯流
排(Universal Serial Bus,USB)與通用介面匯流排(General Purpose Interface Bus,GPIB)之間的轉接器。系統400可選擇性地包含放大器A,耦接於訊號產生器SG及耦合裝置CT之第一端P1之間,用以放大參考電壓Vi。
According to an embodiment, as shown in FIG. 4 , the
根據實施例,週邊控制裝置PD可包含桌上型電腦、伺服器、筆記型電腦、平板電腦及/或運算裝置,用以進行相關的控制。測量裝置MD可包含示波器,例如數位儲存示波器。 According to an embodiment, the peripheral control device PD may include a desktop computer, a server, a notebook computer, a tablet computer and/or a computing device for related control. The measuring device MD may comprise an oscilloscope, such as a digital storage oscilloscope.
第4圖中,訊號產生器SG及測量裝置MD之間的路徑可例如使用通用介面匯流排(GPIB)之介面。訊號產生器SG及耦合裝置CT之間的路徑可為電壓充電路徑,以傳送參考電壓Vi及放大之參考電壓Vi。 In Fig. 4, the path between the signal generator SG and the measuring device MD may for example use a general purpose interface bus (GPIB) interface. The path between the signal generator SG and the coupling device CT may be a voltage charging path for transmitting the reference voltage Vi and the amplified reference voltage Vi.
耦合裝置CT及週邊控制裝置PD之間的路徑、以及耦合裝置CT及受測裝置EUT之間的路徑可為測試路徑,用以存取測試相關的訊號及電壓。舉例而言,於耦合裝置CT及受測裝置EUT之間的路徑上,可將第二電壓V’RS載於局部區域網路(LAN)之訊號上。 The path between the coupling device CT and the peripheral control device PD, and the path between the coupling device CT and the device under test EUT may be test paths for accessing test-related signals and voltages. For example, the second voltage V'RS can be carried on a signal of a local area network (LAN) on the path between the coupling device CT and the device under test EUT.
週邊控制裝置PD及測量裝置MD之間的路徑、以及訊號產生器SG及測量裝置MD之間的路徑可為控制路徑,用以藉由週邊控制裝置PD操控及監看訊號產生器SG及測量裝置MD。 The path between the peripheral control device PD and the measurement device MD, and the path between the signal generator SG and the measurement device MD can be control paths for controlling and monitoring the signal generator SG and the measurement device by the peripheral control device PD MD.
測量裝置MD及受測裝置EUT之間的路徑可為測量路徑,舉例而言,可藉由示波器探針(probe)對受測裝置EUT進行測量。 The path between the measurement device MD and the device under test EUT may be a measurement path, for example, the device under test EUT may be measured by an oscilloscope probe.
根據實施例,如第4圖所示,可將訊號產生器SG、放大器A及耦合裝置CT設置於工作桌T1,且將待測裝置EUT、週邊控制裝置PD、轉接器C及測量裝置MD設置於工作桌T2,以進行輻射敏感度之模擬測試。 According to the embodiment, as shown in FIG. 4, the signal generator SG, the amplifier A and the coupling device CT can be arranged on the work table T1, and the device under test EUT, the peripheral control device PD, the adapter C and the measuring device MD Set up at work table T2 for simulation test of radiation sensitivity.
第5圖使用第4圖之系統400,測試輻射敏感度的流程圖,其可包含以下步驟:步驟510:於耦合裝置CT及週邊控制裝置PD之間存取第一控制訊號
Sc1;步驟520:於測量裝置MD及週邊控制裝置PD之間存取第二控制訊號Sc2;及步驟530:當耦合裝置CT輸出第二電壓V’RS至受測裝置EUT時,測量裝置MD測量受測裝置EUT以得到測量結果Sr。
FIG. 5 is a flow chart of testing radiation sensitivity using the
步驟510至530可包含於第3圖之步驟360,藉由使用週邊控制裝置PD進行相關控制,可使用參考電壓Vi產生第二電壓V’RS以模擬輻射敏感度測試。
第6圖為第2圖及第4圖之耦合裝置CT的示意圖。根據實施例,耦合裝置CT可包含一組電容及一組電阻,耦接於第一端P1。耦合裝置CT可另包含扼流電路610,耦接於第三端P3。扼流電路610可例如包含共模扼流圈(common mode choke)。扼流電路610可降低甚而阻隔第二電壓VR’S對於週邊控制裝置PD之干擾。舉例而言,SMA(SubMiniature version A)接頭可耦接於第一端P1,第一RJ45接頭可耦接於第二端P2,且第二RJ45接頭可耦接於第三端P3。耦合裝置CT之外部機構可例如為立方體,設有適宜的散熱孔。舉例而言,耦合裝置CT長度、寬度及高度可為(但不限於)180公釐、180公釐及50公釐,且第二端P2及第三端P3的RJ45接頭可設於立方體之同一面。根據實施例,藉由修改耦合裝置CT,可不限於使用RJ45接頭,亦可適用於其他接頭,例如通用串列匯流排(USB)接頭。
Fig. 6 is a schematic diagram of the coupling device CT in Fig. 2 and Fig. 4 . According to an embodiment, the coupling device CT may include a set of capacitors and a set of resistors coupled to the first terminal P1. The coupling device CT may further include a
綜上所述,藉由實施例提供的測試輻射敏感度之方法300及系統400,可於電波暗室110進行初始的量測與校準,而後續即可使用訊號產生器SG產生對應的參考電壓Vi,以產生第二電壓V’RS以模擬輻射波W對於待測裝置EUT的干擾與影響。由於可不再須反覆進入電波暗室110中進行操作,故可改善人員的健康與安全,降低裝備及時間之成本,及便於除錯與故障分析,對於處理本領域之長期難題,實有助益。本發明之測試輻射敏感度之方法可用於伺服
器的測試,以減少伺服器受到電磁輻射的干擾,增進伺服器的穩定性及可靠度,使伺服器更適合用於人工智慧(Artificial Intelligence,簡稱AI)運算、邊緣運算(Edge Computing),或可當作5G伺服器、雲端伺服器或車聯網伺服器使用。
In summary, with the
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.
300:方法 300: method
310至360:步驟 310 to 360: Steps
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110134364A TWI785801B (en) | 2021-09-15 | 2021-09-15 | Method and system for testing radiation susceptibility |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110134364A TWI785801B (en) | 2021-09-15 | 2021-09-15 | Method and system for testing radiation susceptibility |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI785801B true TWI785801B (en) | 2022-12-01 |
| TW202314264A TW202314264A (en) | 2023-04-01 |
Family
ID=85794762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110134364A TWI785801B (en) | 2021-09-15 | 2021-09-15 | Method and system for testing radiation susceptibility |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI785801B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200521464A (en) * | 2003-12-24 | 2005-07-01 | Ind Tech Res Inst | Electromagnetic signal sensing system |
| US20070139037A1 (en) * | 2003-11-12 | 2007-06-21 | White Drive Products, Inc | Device for Testing Magnetic Speed and Proximity Sensors Used with Rotating Machinery |
| TW200918914A (en) * | 2007-10-24 | 2009-05-01 | King Yuan Electronics Co Ltd | Testing system module |
| US20090140732A1 (en) * | 2007-12-04 | 2009-06-04 | Headway Technologies, Inc. | Low cost simplified spectrum analyzer for magnetic head/media tester |
| TW201229523A (en) * | 2011-01-12 | 2012-07-16 | Chunghwa Telecom Co Ltd | Wireless intelligent sensing-type alternating current measurement and report apparatus |
| TW201403082A (en) * | 2012-03-27 | 2014-01-16 | Rosenberger Hochfrequenztech | Vector network analyzer and method thereof for measuring control parameter of electronic object to be analyzed |
| US20160139229A1 (en) * | 2014-11-14 | 2016-05-19 | Allegro Microsystems, Llc | Dual-Path Analog to Digital Converter |
| TW201800769A (en) * | 2015-12-18 | 2018-01-01 | 塔拉檢視有限公司 | Automated test system for integrated circuits |
| US20190391212A1 (en) * | 2018-06-21 | 2019-12-26 | Allegro Microsystems, Llc | Diagnostic Methods and Apparatus for Magnetic Field Sensors |
| TW202022398A (en) * | 2018-12-13 | 2020-06-16 | 國立成功大學 | Detection device and detection circuit thereof |
-
2021
- 2021-09-15 TW TW110134364A patent/TWI785801B/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070139037A1 (en) * | 2003-11-12 | 2007-06-21 | White Drive Products, Inc | Device for Testing Magnetic Speed and Proximity Sensors Used with Rotating Machinery |
| TW200521464A (en) * | 2003-12-24 | 2005-07-01 | Ind Tech Res Inst | Electromagnetic signal sensing system |
| TW200918914A (en) * | 2007-10-24 | 2009-05-01 | King Yuan Electronics Co Ltd | Testing system module |
| US20090140732A1 (en) * | 2007-12-04 | 2009-06-04 | Headway Technologies, Inc. | Low cost simplified spectrum analyzer for magnetic head/media tester |
| TW201229523A (en) * | 2011-01-12 | 2012-07-16 | Chunghwa Telecom Co Ltd | Wireless intelligent sensing-type alternating current measurement and report apparatus |
| TW201403082A (en) * | 2012-03-27 | 2014-01-16 | Rosenberger Hochfrequenztech | Vector network analyzer and method thereof for measuring control parameter of electronic object to be analyzed |
| US20160139229A1 (en) * | 2014-11-14 | 2016-05-19 | Allegro Microsystems, Llc | Dual-Path Analog to Digital Converter |
| TW201800769A (en) * | 2015-12-18 | 2018-01-01 | 塔拉檢視有限公司 | Automated test system for integrated circuits |
| US20190391212A1 (en) * | 2018-06-21 | 2019-12-26 | Allegro Microsystems, Llc | Diagnostic Methods and Apparatus for Magnetic Field Sensors |
| TW202022398A (en) * | 2018-12-13 | 2020-06-16 | 國立成功大學 | Detection device and detection circuit thereof |
Non-Patent Citations (1)
| Title |
|---|
| H. M. Quinn, D. A. Black, W. H. Robinson, and S. P. Buchner, "Fault Simulation and Emulation Tools to Augment Radiation-Hardness Assurance Testing," IEEEE Transactions on Nuclear Science. June 2013, Vol. 60, No. 3, page 2119-2142. * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202314264A (en) | 2023-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sipila et al. | High-frequency periodic time-domain waveform measurement system | |
| US7038468B2 (en) | Method and a test setup for measuring large-signal S-parameters that include the coefficients relating to the conjugate of the incident waves | |
| US8212572B2 (en) | Electromagnetic compatibility multi-carrier immunity testing system and method | |
| CN109828162A (en) | Electromagnetic interference prediction technique and system | |
| CN112230069A (en) | Integrated circuit electromagnetic interference diagnostic system and method | |
| Yao et al. | Time-domain simulation and measurement of a guided-wave EMP simulator's field uniformity | |
| CN103063939B (en) | Ground cascade system external radio frequency electromagnetic environment test method | |
| KR101939758B1 (en) | Method for measuring performance of antenna | |
| CN114755563A (en) | System and method for testing radio frequency packaged chip | |
| TWI785801B (en) | Method and system for testing radiation susceptibility | |
| CN116148549B (en) | Systems and methods for testing radiation susceptibility | |
| TWI771232B (en) | System and method for testing radiation susceptibility | |
| US11740273B2 (en) | Method and system for testing radiation susceptibility | |
| Nicolae et al. | Using GTEM cells for immunity tests on electronic boards with microcontroller | |
| Albarracin et al. | Spectral Response of the Conical Monopole as Field Sensor Calibration Setup | |
| Atanasković et al. | Study of loop probe dimensions influence on a probe calibration factor in near-field measurements | |
| Jiang et al. | Determining the effect of relative size of sensor on calibration accuracy of TEM cells | |
| CN105021870A (en) | Measurement method for induced voltage of cable terminal | |
| Pous et al. | Time domain double-loaded electromagnetic field probe applied to unmanned air vehicles | |
| KR102921952B1 (en) | System and method for testing ElectroMagnetic Compatibility(EMC) | |
| Zheng et al. | Conducted Electromagnetic Susceptibility Analysis of Chips Based on BCI Method | |
| Trip et al. | TEM Cell Measurements in Automotive EMC: A Case Study | |
| Luo et al. | Experimental Verification of the Correlation Between Continuous Wave (CW) and Electromagnetic Pulse (EMP) Irradiation Methodologies | |
| Parra et al. | Uncertainty estimation in H-field time domain shielding effectiveness measurements | |
| Sarif et al. | Development of Uniform Technique for Electromagnetic Compatibility Testing in Sony and External Facilities |