TWI785626B - Peripheral portion coating apparatus and peripheral portion coating method - Google Patents
Peripheral portion coating apparatus and peripheral portion coating method Download PDFInfo
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- TWI785626B TWI785626B TW110119233A TW110119233A TWI785626B TW I785626 B TWI785626 B TW I785626B TW 110119233 A TW110119233 A TW 110119233A TW 110119233 A TW110119233 A TW 110119233A TW I785626 B TWI785626 B TW I785626B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
- B05B13/0228—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts the movement of the objects being rotative
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
- B05B13/0405—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
- B05B15/70—Arrangements for moving spray heads automatically to or from the working position
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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Abstract
本發明係利用旋轉保持部保持基板而使基板繞著基板之中心軸旋轉。於基板旋轉之狀態下,藉由利用塗布液供給部向基板一面之周緣部供給塗布液,從而於基板一面之除中央區域以外之周緣部形成塗布膜。當於基板一面之周緣部形成塗布膜之後,反覆進行預定次數2次以上之利用旋轉保持部之攪拌動作。於各攪拌動作中,使基板加速而提高基板之轉速。於基板加速之後,使基板減速而減小基板之轉速。於基板減速之後,維持基板之轉速。In the present invention, the substrate is held by the rotation holder to rotate the substrate around the central axis of the substrate. By supplying the coating liquid to the peripheral portion of one side of the substrate by the coating liquid supply unit while the substrate is rotating, a coating film is formed on the peripheral portion of one side of the substrate except for the central region. After the coating film is formed on the peripheral portion of one surface of the substrate, the stirring operation by the rotating holding portion is repeated for a predetermined number of times or more. In each stirring operation, the substrate is accelerated to increase the rotational speed of the substrate. After the substrate is accelerated, the substrate is decelerated to reduce the rotational speed of the substrate. After the substrate is decelerated, the rotational speed of the substrate is maintained.
Description
本發明係關於一種在基板周緣部形成塗布膜之周緣部塗布裝置及周緣部塗布方法。The present invention relates to a peripheral portion coating device and a peripheral portion coating method for forming a coating film on the peripheral portion of a substrate.
半導體裝置等之製造中之微影步驟中,藉由旋轉吸盤使得被水平支持之基板旋轉。於該狀態下,藉由向基板之被處理面之大致中央部噴出抗蝕液,從而於基板之整個被處理面形成抗蝕膜。又,藉由向基板周緣部噴出清洗液,從而去除周緣部之抗蝕膜。然後,藉由將基板曝光及顯影,從而於除周緣部以外之基板之中央區域形成抗蝕圖案。近年來,於基板周緣部進一步形成有環狀塗布膜(例如,參照日本專利5682521號公報、日本專利5779168號公報)。In a lithography step in the manufacture of semiconductor devices, etc., a substrate supported horizontally is rotated by a rotating chuck. In this state, a resist film is formed on the entire surface of the substrate to be processed by spraying the resist liquid toward the substantially central portion of the surface to be processed of the substrate. In addition, the resist film on the peripheral portion is removed by spraying the cleaning liquid toward the peripheral portion of the substrate. Then, by exposing and developing the substrate, a resist pattern is formed on the central region of the substrate except the peripheral portion. In recent years, a ring-shaped coating film has been further formed on the peripheral portion of the substrate (for example, refer to Japanese Patent No. 5682521 and Japanese Patent No. 5779168).
於基板之周緣部塗布中,於基板中央區域之抗蝕圖案與周緣部內緣之塗布膜之交界部分,塗布膜之乾燥較快。藉此可知,塗布膜厚度局部變大,於周緣部內緣處塗布膜局部凸起。基板周緣部之塗布膜將會於之後之步驟中藉由蝕刻等被去除。然而,於塗布膜之凸起部分之厚度較大之情形時,該部分有時會以殘渣之形式殘留。於此種情形時,基板存在缺陷。因此,要求提高塗布膜厚度之均勻性。In the coating of the peripheral portion of the substrate, the coating film dries faster at the boundary portion between the resist pattern in the central region of the substrate and the coating film on the inner edge of the peripheral portion. From this, it can be seen that the thickness of the coating film is locally increased, and the coating film is partially raised at the inner edge of the peripheral portion. The coating film on the peripheral portion of the substrate will be removed by etching or the like in a subsequent step. However, when the thickness of the convex part of a coating film is large, this part may remain as a residue. In this case, the substrate is defective. Therefore, it is required to improve the uniformity of coating film thickness.
本發明之目的在於提供一種能夠提高形成於基板周緣部之塗布膜厚度之均勻性之周緣部塗布裝置及周緣部塗布方法。An object of the present invention is to provide a peripheral portion coating device and a peripheral portion coating method capable of improving the uniformity of thickness of a coating film formed on the peripheral portion of a substrate.
(1)本發明之一態樣之周緣部塗布裝置具備:旋轉保持部,其保持基板使基板繞著基板之中心軸旋轉;塗布液供給部,其於利用旋轉保持部使基板旋轉之狀態下,藉由向基板一面之周緣部供給塗布液,從而於基板一面之除中央區域以外之周緣部形成塗布膜;及控制部,其在利用塗布液供給部於基板一面之周緣部形成塗布膜之後,以反覆進行預定次數2次以上之攪拌動作之方式控制旋轉保持部;且攪拌動作包括:使基板加速而提高基板之轉速;於基板加速之後使基板減速而減小基板之轉速;及於基板減速之後維持基板之轉速。(1) A peripheral portion coating apparatus according to an aspect of the present invention includes: a rotation holding unit that holds a substrate so as to rotate the substrate around a central axis of the substrate; and a coating liquid supply unit that rotates the substrate by the rotation holding unit. , by supplying the coating liquid to the peripheral portion of one side of the substrate, thereby forming a coating film on the peripheral portion of one side of the substrate except for the central region; , controlling the rotation holding part in such a way as to repeatedly perform a predetermined number of times of agitation for more than 2 times; and the agitation action includes: accelerating the substrate to increase the rotation speed of the substrate; decelerating the substrate after accelerating the substrate to reduce the rotation speed of the substrate; and Maintain the rotation speed of the substrate after deceleration.
於該周緣部塗布裝置中,利用旋轉保持部保持基板而使基板繞著基板之中心軸旋轉。於利用旋轉保持部使基板旋轉之狀態下,藉由利用塗布液供給部向基板一面之周緣部供給塗布液,從而於基板一面之除中央區域以外之周緣部形成塗布膜。利用塗布液供給部於基板一面之周緣部形成塗布膜之後,反覆進行預定次數2次以上之利用旋轉保持部之攪拌動作。於各攪拌動作中,使基板加速而提高基板之轉速。於基板加速之後,使基板減速而減小基板之轉速。於基板減速之後,維持基板之轉速。In this peripheral portion coating device, the substrate is held by the rotation holding unit to rotate the substrate around the central axis of the substrate. By supplying the coating liquid to the peripheral portion of one side of the substrate by the coating liquid supply portion while the substrate is rotated by the rotation holding unit, a coating film is formed on the peripheral portion of one side of the substrate except for the central region. After the coating film is formed on the peripheral edge of one side of the substrate by the coating solution supply unit, the stirring operation by the rotation holding unit is repeated a predetermined number of times or more. In each stirring operation, the substrate is accelerated to increase the rotational speed of the substrate. After the substrate is accelerated, the substrate is decelerated to reduce the rotational speed of the substrate. After the substrate is decelerated, the rotational speed of the substrate is maintained.
各攪拌動作中,當基板加速時,施加於基板周緣部之塗布液之離心力增加,當基板減速時,施加於基板周緣部之塗布液之離心力減少。因此,根據上述構成,藉由反覆進行攪拌動作,從而使施加於塗布液之離心力反覆增減。因此,塗布液於基板周緣部得到攪拌。如此一來,基板周緣部之塗布液變得均勻,所形成之塗布膜近乎平坦。In each stirring operation, when the substrate is accelerated, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate increases, and when the substrate is decelerated, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate decreases. Therefore, according to the above configuration, the centrifugal force applied to the coating liquid is repeatedly increased and decreased by repeating the stirring operation. Therefore, the coating liquid is stirred at the peripheral edge of the substrate. In this way, the coating solution on the periphery of the substrate becomes uniform, and the formed coating film is almost flat.
又,若基板長時間高速旋轉,則於基板周緣部會產生促進塗布液乾燥之亂流。於此種情形時,所形成之塗布膜厚度局部變大,塗布膜局部凸起。對此,根據上述構成,藉由反覆進行攪拌動作,從而抑制於基板周緣部產生亂流,防止促進塗布液之乾燥。就結果而言,能夠提高形成於基板周緣部之塗布膜厚度之均勻性。Also, if the substrate is rotated at high speed for a long time, a turbulent flow that promotes drying of the coating liquid will be generated at the periphery of the substrate. In such a case, the thickness of the formed coating film becomes locally large, and the coating film is partially raised. On the other hand, according to the above configuration, by repeating the stirring operation, generation of turbulent flow at the peripheral edge of the substrate is suppressed, and drying of the coating liquid is prevented from being accelerated. As a result, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved.
(2)預定次數亦可為因利用塗布液供給部形成於基板一面之周緣部之塗布膜喪失流動性而使塗布膜乾燥之次數。於此種情形時,能夠更加提高形成於基板周緣部之塗布膜厚度之均勻性。(2) The predetermined number of times may be the number of times the coating film is dried due to loss of fluidity of the coating film formed on the peripheral portion of one side of the substrate by the coating liquid supply unit. In such a case, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be further improved.
(3)控制部亦可於反覆進行2次以上之攪拌動作中之最後攪拌動作中,以省略執行維持基板轉速這一步之方式控制旋轉保持部。於此種情形時,能夠提高形成於基板周緣部之塗布膜厚度之均勻性,並且能夠縮短基板處理所需之時間。(3) The control unit may control the rotation holding unit so as to omit the step of maintaining the rotation speed of the substrate in the last stirring operation among the stirring operations repeated two or more times. In this case, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved, and the time required for substrate processing can be shortened.
(4)控制部亦可於各攪拌動作中,以基板之旋轉加速度之絕對值為基板之旋轉減速度之絕對值以上之方式控制旋轉保持部。於此種情形時,由於基板之旋轉加速度較大,故而能夠縮短基板高速旋轉之時間。因此,能更加容易地防止促進塗布液之乾燥。如此一來,能夠更加容易地提高形成於基板周緣部之塗布膜厚度之均勻性。(4) The control unit may control the rotation holding unit so that the absolute value of the rotational acceleration of the substrate is equal to or greater than the absolute value of the rotational deceleration of the substrate during each stirring operation. In this case, since the rotational acceleration of the substrate is relatively large, the time for the substrate to rotate at a high speed can be shortened. Therefore, acceleration of drying of the coating liquid can be prevented more easily. In this way, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be more easily improved.
(5)亦可為,塗布液供給部包括噴出塗布液之塗布噴嘴,且控制部於使塗布噴嘴向第1方向移動以使得塗布噴嘴所噴出之塗布液之供給位置從基板周緣部之外緣向內緣移動之後,再使塗布噴嘴向與第1方向相反之第2方向移動以使得塗布噴嘴所噴出之塗布液之供給位置從基板周緣部之內緣向外緣移動。於此種情形時,於基板一面之除中央區域以外之周緣部,能夠容易地形成塗布膜。(5) The coating liquid supply part may include a coating nozzle for ejecting the coating liquid, and the control part may move the coating nozzle in the first direction so that the supply position of the coating liquid ejected from the coating nozzle is away from the outer edge of the peripheral edge of the substrate. After moving toward the inner edge, the coating nozzle is moved in a second direction opposite to the first direction so that the supply position of the coating liquid ejected from the coating nozzle moves from the inner edge to the outer edge of the peripheral edge of the substrate. In such a case, the coating film can be easily formed on the periphery of one surface of the substrate except for the central region.
(6)控制部亦可以向第2方向移動之速度大於向第1方向移動之速度之方式使塗布噴嘴移動。當於基板之中央區域形成有抗蝕圖案等時,由於在抗蝕圖案與周緣部內緣之塗布膜之交界部分,塗布膜之乾燥較快,故而於周緣部內緣處塗布膜局部凸起。儘管於此種情形時,根據上述構成,仍能夠增大周緣部外緣處塗布膜之厚度。因此,形成於基板周緣部之塗布膜近乎平坦。如此一來,能夠提高形成於基板周緣部之塗布膜厚度之均勻性。(6) The control unit may move the coating nozzle so that the speed in the second direction is higher than the speed in the first direction. When a resist pattern or the like is formed in the central area of the substrate, the coating film dries faster at the interface between the resist pattern and the coating film at the inner edge of the peripheral portion, so that the coating film partially bulges at the inner edge of the peripheral portion. Even in such a case, according to the above constitution, it is possible to increase the thickness of the coating film at the outer edge of the peripheral portion. Therefore, the coating film formed on the peripheral portion of the substrate is almost flat. In this way, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved.
(7)本發明之另一態樣之周緣部塗布方法包括如下步驟:利用旋轉保持部保持基板而使基板繞著基板之中心軸旋轉;於利用旋轉保持部使基板旋轉之狀態下,藉由利用塗布液供給部向基板一面之周緣部供給塗布液,從而於基板一面之除中央區域以外之周緣部形成塗布膜;及利用塗布液供給部於基板一面之周緣部形成塗布膜之後,反覆進行預定次數2次以上之利用旋轉保持部之攪拌動作;且攪拌動作包括:使基板加速而提高基板之轉速;於基板加速之後使基板減速而減小基板之轉速;及於基板減速之後維持基板之轉速。(7) A method for coating a peripheral portion of another aspect of the present invention includes the steps of: rotating the substrate around the central axis of the substrate while being held by the rotation holding unit; Use the coating liquid supply part to supply the coating liquid to the peripheral part of one side of the substrate, thereby forming a coating film on the peripheral part of one side of the substrate except the central area; and after using the coating liquid supply part to form the coating film on the peripheral part of one side of the substrate, repeat Stirring action using the rotating holding part for a predetermined number of times or more; and the stirring action includes: accelerating the substrate to increase the rotational speed of the substrate; decelerating the substrate after accelerating the substrate to reduce the rotational speed of the substrate; and maintaining the rotational speed of the substrate after decelerating the substrate Rotating speed.
根據該周緣部塗布方法,利用旋轉保持部保持基板而使基板繞著基板之中心軸旋轉。於利用旋轉保持部使基板旋轉之狀態下,藉由利用塗布液供給部向基板一面之周緣部供給塗布液,從而於基板一面之除中央區域以外之周緣部形成塗布膜。利用塗布液供給部於基板一面之周緣部形成塗布膜之後,反覆進行預定次數2次以上之利用旋轉保持部之攪拌動作。於各攪拌動作中,使基板加速而提高基板之轉速。於基板加速之後,使基板減速而減小基板之轉速。於基板減速之後,維持基板之轉速。According to this peripheral portion coating method, the substrate is held by the rotation holding unit to rotate the substrate around the central axis of the substrate. By supplying the coating liquid to the peripheral portion of one side of the substrate by the coating liquid supply portion while the substrate is rotated by the rotation holding unit, a coating film is formed on the peripheral portion of one side of the substrate except for the central region. After the coating film is formed on the peripheral edge of one side of the substrate by the coating solution supply unit, the stirring operation by the rotation holding unit is repeated a predetermined number of times or more. In each stirring operation, the substrate is accelerated to increase the rotational speed of the substrate. After the substrate is accelerated, the substrate is decelerated to reduce the rotational speed of the substrate. After the substrate is decelerated, the rotational speed of the substrate is maintained.
各攪拌動作中,當基板加速時,施加於基板周緣部之塗布液之離心力增加,當基板減速時,施加於基板周緣部之塗布液之離心力減少。因此,根據上述構成,藉由反覆進行攪拌動作,從而使施加於塗布液之離心力反覆增減。因此,塗布液於基板周緣部得到攪拌。如此一來,基板周緣部之塗布液變得均勻,所形成之塗布膜近乎平坦。In each stirring operation, when the substrate is accelerated, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate increases, and when the substrate is decelerated, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate decreases. Therefore, according to the above configuration, the centrifugal force applied to the coating liquid is repeatedly increased and decreased by repeating the stirring operation. Therefore, the coating liquid is stirred at the peripheral edge of the substrate. In this way, the coating solution on the periphery of the substrate becomes uniform, and the formed coating film is almost flat.
又,若基板長時間高速旋轉,則於基板周緣部會產生促進塗布液乾燥之亂流。於此種情形時,所形成之塗布膜厚度局部變大,塗布膜局部凸起。對此,根據上述構成,藉由反覆進行攪拌動作,從而抑制於基板周緣部產生亂流,防止促進塗布液之乾燥。就結果而言,能夠提高形成於基板周緣部之塗布膜厚度之均勻性。Also, if the substrate is rotated at high speed for a long time, a turbulent flow that promotes drying of the coating liquid will be generated at the periphery of the substrate. In such a case, the thickness of the formed coating film becomes locally large, and the coating film is partially raised. On the other hand, according to the above configuration, by repeating the stirring operation, generation of turbulent flow at the peripheral edge of the substrate is suppressed, and drying of the coating liquid is prevented from being accelerated. As a result, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved.
(8)預定次數亦可為因利用塗布液供給部形成於基板一面之周緣部之塗布膜喪失流動性而使塗布膜乾燥之次數。於此種情形時,能夠更加提高形成於基板周緣部之塗布膜厚度之均勻性。(8) The predetermined number of times may be the number of times the coating film is dried due to loss of fluidity of the coating film formed on the peripheral portion of one side of the substrate by the coating liquid supply unit. In such a case, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be further improved.
(9)亦可於反覆進行2次以上之攪拌動作中之最後攪拌動作中,省略執行維持基板轉速這一步。於此種情形時,能夠提高形成於基板周緣部之塗布膜厚度之均勻性,並且能夠縮短基板處理所需之時間。(9) It is also possible to omit the step of maintaining the rotation speed of the substrate in the last stirring operation among the stirring operations repeated more than two times. In this case, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved, and the time required for substrate processing can be shortened.
(10)亦可於各攪拌動作中,基板之旋轉加速度之絕對值為基板之旋轉減速度之絕對值以上。於此種情形時,由於基板之旋轉加速度較大,故而能夠縮短基板高速旋轉之時間。因此,更加容易地防止促進塗布液之乾燥。如此一來,能夠更加容易地提高形成於基板周緣部之塗布膜厚度之均勻性。(10) In each stirring operation, the absolute value of the rotational acceleration of the substrate may be greater than or equal to the absolute value of the rotational deceleration of the substrate. In this case, since the rotational acceleration of the substrate is relatively large, the time for the substrate to rotate at a high speed can be shortened. Therefore, it is easier to prevent accelerated drying of the coating liquid. In this way, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be more easily improved.
(11)形成塗布膜之步驟亦可包括:於使塗布噴嘴向第1方向移動以使得塗布液供給部之塗布噴嘴所噴出之塗布液之供給位置從基板周緣部之外緣向內緣移動之後,再使塗布噴嘴向與第1方向相反之第2方向移動以使得塗布噴嘴所噴出之塗布液之供給位置從基板周緣部之內緣向外緣移動。於此種情形時,於基板一面之除中央區域以外之周緣部,能夠容易地形成塗布膜。(11) The step of forming the coating film may also include: after moving the coating nozzle in the first direction so that the supply position of the coating liquid ejected from the coating nozzle of the coating liquid supply part is moved from the outer edge to the inner edge of the peripheral edge of the substrate. and then moving the coating nozzle in a second direction opposite to the first direction so that the supply position of the coating liquid ejected from the coating nozzle moves from the inner edge to the outer edge of the peripheral edge of the substrate. In such a case, the coating film can be easily formed on the periphery of one surface of the substrate except for the central region.
(12)塗布噴嘴向第2方向移動之速度亦可大於塗布噴嘴向第1方向移動之速度。當於基板之中央區域形成有抗蝕圖案等時,由於在抗蝕圖案與周緣部內緣之塗布膜之交界部分,塗布膜之乾燥較快,故而於周緣部內緣處塗布膜局部凸起。儘管於此種情形時,根據上述方法,仍能夠增大周緣部外緣處塗布膜之厚度。因此,形成於基板周緣部之塗布膜近乎平坦。如此一來,能夠提高形成於基板周緣部之塗布膜厚度之均勻性。(12) The speed at which the coating nozzle moves in the second direction may be greater than the speed at which the coating nozzle moves in the first direction. When a resist pattern or the like is formed in the central area of the substrate, the coating film dries faster at the interface between the resist pattern and the coating film at the inner edge of the peripheral portion, so that the coating film partially bulges at the inner edge of the peripheral portion. Even in this case, according to the method described above, it is possible to increase the thickness of the coating film at the outer edge of the peripheral portion. Therefore, the coating film formed on the peripheral portion of the substrate is almost flat. In this way, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate can be improved.
(1)周緣部塗布裝置
以下,針對本發明一實施方式之周緣部塗布裝置及周緣部塗布方法,參照附圖進行說明。圖1係本發明一實施方式之周緣部塗布裝置之概略剖視圖。如圖1所示,周緣部塗布裝置100具備旋轉保持部10、護罩20、塗布液供給部30、清洗液供給部40及控制部50。旋轉保持部10包括旋轉吸盤11及馬達12。旋轉吸盤11安裝於馬達12之旋轉軸12a之前端,被驅動而以將基板W保持水平姿勢之狀態繞著鉛直軸旋轉。(1) Peripheral coating device
Hereinafter, a peripheral portion coating device and a peripheral portion coating method according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic cross-sectional view of a peripheral portion coating device according to an embodiment of the present invention. As shown in FIG. 1 , the peripheral
護罩20設置為包圍被旋轉吸盤11所保持之基板W之周圍,接住從基板W飛散之塗布液或清洗液。於護罩20之上部形成有用於向護罩20內部導入基板W之開口部21。又,於護罩20之下部形成有廢液口22及排氣口23。廢液口22及排氣口23分別連接於工廠內之廢液設備及排氣設備。The
塗布液供給部30包括塗布噴嘴31、塗布液貯存部32、配管33及閥34。塗布噴嘴31經由配管33與塗布液貯存部32連接。塗布液貯存部32中貯存有塗布液。本實施方式中,塗布液為感光性抗蝕液,但實施方式並不限定於此。塗布液亦可為非感光性抗蝕液,還可為含樹脂之溶液。配管33中介插有閥34。The coating
塗布噴嘴31設置為能夠於基板W周緣部上方之處理位置與護罩20外之待機位置之間移動,且當處理基板時移動至處理位置。於該狀態下,藉由打開閥34,從塗布液貯存部32經過配管33向塗布噴嘴31供給塗布液。如此一來,從塗布噴嘴31向基板W之周緣部噴出塗布液。此處,基板W之周緣部係指基板W之距離外周部僅特定寬度之內側區域。The
清洗液供給部40包括1個以上(本例中為2個)之後部清洗液噴嘴41、清洗液貯存部42、配管43及閥44。各後部清洗液噴嘴41設置於基板W之下方,且經由配管43與清洗液貯存部42連接。清洗液貯存部42中貯存有清洗液。清洗液例如包括PGMEA(propyleneglycol monomethyl ether acetate,丙二醇甲醚乙酸酯)、PGME(propyleneglycol monomethyl ether,丙二醇甲醚)或環己酮(cyclohexanone)。配管43中介插有閥44。The cleaning
當處理基板時,藉由打開閥44,而從清洗液貯存部42經過配管43向各後部清洗液噴嘴41供給清洗液。於此種情形時,從各後部清洗液噴嘴41向基板W之背面(與被處理面相反側之面)噴出清洗液。如此一來,基板W之背面得到洗淨。When the substrate is processed, the cleaning liquid is supplied from the cleaning
控制部50例如包括CPU(central processing unit,中央運算處理裝置),控制塗布噴嘴31之移動。又,控制部50藉由控制馬達12之轉速,從而控制被旋轉吸盤11所保持之基板W之轉速。進而,控制部50藉由控制閥34、44之打開與關閉,從而分別控制塗布液及清洗液之噴出時機。The
(2)基板處理之概要
圖2~圖6係表示基板處理步驟中基板之側視圖。如圖2所示,基板W以被處理面朝向上方之方式被旋轉吸盤11保持。此處,於基板W之除周緣部以外之被處理面之中央區域,形成有未圖示之抗蝕圖案。繼而,利用圖1之馬達12使得基板W旋轉。(2) Outline of
接下來,當塗布噴嘴31從待機位置移動至基板W外上方之位置之後,如圖2中箭頭A所示,朝著基板W之中心移動。以下,將塗布噴嘴31從基板W之外側朝向基板W之中心移動稱作向內掃描。如圖3所示,於向內掃描中,當塗布噴嘴31到達基板W周緣部之外緣附近之上方位置時,從塗布噴嘴31開始噴出塗布液。Next, when the
當塗布噴嘴31移動至基板W周緣部之內緣附近之上方位置時,如圖4中箭頭B所示,朝向基板W之外側移動。以下,將塗布噴嘴31從基板W之中心朝向基板W之外側移動稱作向外掃描。如圖5所示,於向外掃描中,當塗布噴嘴31到達基板W之周緣部上方附近之位置時,停止從塗布噴嘴31噴出塗布液。然後,塗布噴嘴31移動至待機位置。When the
於基板W周緣部之塗布膜乾燥之後,如圖6所示,從後部清洗液噴嘴41向基板W之背面噴出清洗液。如此一來,基板W之背面得到洗淨,並且基板W之斜面部之塗布膜被去除。然後,藉由乾燥清洗液,從而結束基板處理。After the coating film on the peripheral portion of the substrate W is dried, a cleaning solution is sprayed from the rear
根據上述控制,執行塗布噴嘴31所噴出之塗布液之供給位置從基板W周緣部之外緣向內緣移動之向內掃描之後,再執行塗布液之供給位置從基板W周緣部之內緣向外緣移動之向外掃描。如此一來,於基板W之被處理面之除中央區域以外之周緣部形成塗布膜。本例中,向外掃描之塗布噴嘴31之移動速度大於向內掃描之塗布噴嘴31之移動速度。According to the above control, after the inward scanning in which the supply position of the coating liquid ejected from the
圖7係表示基板處理後基板W之側視圖。上述基板處理中,於基板W之中央區域之抗蝕圖案與周緣部內緣之塗布膜之交界部分,塗布膜之乾燥較快。如此一來,如圖7所示,塗布膜厚度局部變大,於周緣部內緣處塗布膜凸起。將該塗布膜中凸起之部分稱作隆起。基板W之周緣部之塗布膜會於周緣部塗布裝置100之外部所進行的之後之步驟中,藉由蝕刻等被去除。FIG. 7 is a side view showing a substrate W after substrate processing. In the substrate processing described above, the coating film dries quickly at the boundary between the resist pattern in the central region of the substrate W and the coating film on the inner edge of the peripheral portion. In this way, as shown in FIG. 7 , the thickness of the coating film becomes locally large, and the coating film protrudes at the inner edge of the peripheral portion. The raised part in this coating film is called a bump. The coating film on the peripheral portion of the substrate W is removed by etching or the like in a subsequent step performed outside the peripheral
然而,於隆起之厚度較大之情形時,隆起之部分有時以殘渣之形式殘留。於此種情形時,基板W存在缺陷。因此,於基板處理中,為了使隆起厚度h2相對於塗布膜之平均膜厚h1之比(以下,稱作膜厚比)變小,執行攪拌動作。再者,平均膜厚h1係指塗布膜中除隆起以外之部分之厚度之平均值。又,隆起厚度h2係指隆起之最大厚度。以下,對基板處理之詳情進行說明。However, when the thickness of the bulge is large, the bulged part may remain as a residue. In this case, the substrate W has defects. Therefore, in the substrate processing, a stirring operation is performed in order to reduce the ratio of the bump thickness h2 to the average film thickness h1 of the coating film (hereinafter referred to as film thickness ratio). In addition, average film thickness h1 means the average value of the thickness of the part except a protrusion in a coating film. Also, the uplift thickness h2 refers to the maximum thickness of the uplift. The details of the substrate processing will be described below.
(3)基板處理之詳情
圖8係表示基板W之處理步驟中基板W之轉速變化之圖。如圖8所示,於初始時點t0,基板W靜止。即,基板W之轉速為0 rpm。又,圖1之閥34、44關閉。首先,藉由基板W開始旋轉,從而提高基板W之轉速,並於時點t1達到固定轉速,例如100 rpm。基板W之轉速維持至時點t2。(3) Details of substrate processing
FIG. 8 is a graph showing changes in the rotational speed of the substrate W in the processing steps of the substrate W. As shown in FIG. As shown in FIG. 8 , at the initial time point t0 , the substrate W is stationary. That is, the rotation speed of the substrate W is 0 rpm. Also, the
又,依次執行圖1之塗布噴嘴31之向內掃描及向外掃描。此處,於時點t1,藉由打開閥34而開始向基板W之周緣部噴出塗布液,並於時點t2,藉由關閉閥34而停止噴出塗布液。如此一來,於基板W之周緣部形成塗布膜。將從時點t1開始至時點t2為止之步驟稱作噴出步驟。Also, the inward scanning and outward scanning of the
於時點t2,基板W之轉速急遽提高。如此一來,於時點t3,基板W之轉速例如達到3000 rpm。將從時點t2開始至時點t3為止之步驟稱作加速步驟。又,以下,將加速步驟中基板W之旋轉加速度簡稱為基板W之旋轉加速度。基板W之旋轉加速度例如為5000 rpm/秒以上,本例中為25000 rpm/秒。At time t2, the rotation speed of the substrate W increases rapidly. In this way, at the time point t3, the rotation speed of the substrate W reaches, for example, 3000 rpm. The step from time t2 to time t3 is called an acceleration step. Hereinafter, the rotational acceleration of the substrate W in the acceleration step is simply referred to as the rotational acceleration of the substrate W. The rotational acceleration of the substrate W is, for example, 5000 rpm/sec or more, and in this example, it is 25000 rpm/sec.
於時點t3,於基板W之轉速維持較短時間(例如大於0秒且1秒以下)之後,基板W之轉速急遽減小。如此一來,於時點t4,基板W之轉速例如達到1000 rpm以下(本例中為500 rpm)。於時點t4,基板W之轉速亦可減小至小於500 rpm (例如0 rpm)。At time t3, after the rotation speed of the substrate W is maintained for a short period of time (for example, greater than 0 seconds and less than 1 second), the rotation speed of the substrate W decreases sharply. In this way, at the time point t4, the rotation speed of the substrate W reaches below 1000 rpm (500 rpm in this example), for example. At the time point t4, the rotation speed of the substrate W may also be reduced to less than 500 rpm (for example, 0 rpm).
將從時點t3開始至時點t4為止之步驟稱作減速步驟。又,以下,將減速步驟中基板W之旋轉減速度簡稱為基板W之旋轉減速度。本例中,基板W之旋轉減速度之絕對值與基板W之旋轉加速度之絕對值大致相等,但實施方式並不限定於此。基板W之旋轉減速度之絕對值亦可小於基板W之旋轉加速度之絕對值。The step from the time point t3 to the time point t4 is called a deceleration step. Hereinafter, the rotational deceleration of the substrate W in the deceleration step is simply referred to as the rotational deceleration of the substrate W. In this example, the absolute value of the rotational deceleration of the substrate W is substantially equal to the absolute value of the rotational acceleration of the substrate W, but the embodiment is not limited thereto. The absolute value of the rotational deceleration of the substrate W may also be smaller than the absolute value of the rotational acceleration of the substrate W.
接下來,於時點t4至時點t5期間,基板W之轉速維持於固定轉速。時點t4與時點t5相隔之時間例如為0.01秒以上10秒以下,本例中為0.15秒。將從時點t4開始至時點t5為止之步驟稱作速度維持步驟。速度維持步驟係用於調整形成於基板W之周緣部之塗布膜厚度之步驟。因此,速度維持步驟之時間係根據塗布膜所需之厚度來決定。Next, during the period from time point t4 to time point t5, the rotation speed of the substrate W is maintained at a constant rotation speed. The time interval between the time point t4 and the time point t5 is, for example, from 0.01 second to 10 seconds, and in this example is 0.15 seconds. The step from time t4 to time t5 is called a speed maintaining step. The speed maintaining step is a step for adjusting the thickness of the coating film formed on the peripheral portion of the substrate W. Therefore, the time of the speed maintaining step is determined according to the required thickness of the coating film.
加速步驟、減速步驟及速度維持步驟中,旋轉保持部10之一連串之動作即為攪拌動作。於時點t5之後,反覆進行多次攪拌動作。此處,預先規定攪拌動作之反覆次數為因形成於基板W之周緣部之塗布膜喪失流動性而使塗布膜乾燥之次數。本例中,攪拌動作之反覆次數為5次,攪拌動作之反覆次數只要為2次以上,則亦可並非5次。又,本例中,省略最後執行之減速步驟後之速度維持步驟。於此種情形時,能夠提高形成於基板W周緣部之塗布膜厚度之均勻性,並且能夠縮短基板處理所需之時間。In the acceleration step, the deceleration step and the speed maintenance step, a series of actions of the rotating holding
最後(本例中為第5次)之攪拌動作中,於執行完減速步驟之後,於時點t6,基板W之轉速達到固定轉速,例如400 rpm。於該狀態下,藉由打開閥44,從而向基板W之背面開始噴出清洗液。如此一來,基板W之背面得到洗淨,並且基板W之斜面部之塗布膜被去除。繼而,於時點t7,基板W之轉速提高,並於時點t8達到固定轉速,例如800 rpm。In the last (fifth time in this example) stirring operation, after the deceleration step is performed, at time t6, the rotation speed of the substrate W reaches a fixed rotation speed, for example, 400 rpm. In this state, by opening the
接下來,於時點t9,藉由關閉閥44,從而停止噴出清洗液。又,基板W之轉速提高,於時點t10例如達到2000 rpm。如此一來,基板W得到乾燥。然後,於時點t11,基板W之轉速減小。於時點t12,藉由基板W停止旋轉,從而結束基板處理。Next, at time t9, the
(4)效果
於本實施方式之周緣部塗布裝置100中,利用旋轉保持部10保持基板W,基板W繞著基板W之中心軸旋轉。於利用旋轉保持部10使基板W旋轉之狀態下,藉由利用塗布液供給部30向基板W之被處理面之周緣部供給塗布液,從而於基板W之被處理面之除中央區域以外之周緣部形成塗布膜。利用塗布液供給部30於基板W之被處理面之周緣部形成塗布膜之後,反覆進行預定次數2次以上之利用旋轉保持部10之攪拌動作。於各攪拌動作中,使基板W加速而提高基板W之轉速。於基板W加速之後,使基板W減速而減小基板W之轉速。於基板W減速之後,維持基板W之轉速。(4) Effect
In the peripheral
各攪拌動作中,當基板W加速時,施加於基板W周緣部之塗布液之離心力增加,當基板W減速時,施加於基板W周緣部之塗布液之離心力減少。因此,根據上述構成,藉由反覆進行攪拌動作,從而使施加於塗布液之離心力反覆增減。因此,塗布液於基板W之周緣部得到攪拌。如此一來,基板W之周緣部之塗布液變得均勻,所形成之塗布膜近乎平坦。In each stirring operation, when the substrate W is accelerated, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate W increases, and when the substrate W decelerates, the centrifugal force of the coating liquid applied to the peripheral portion of the substrate W decreases. Therefore, according to the above configuration, the centrifugal force applied to the coating liquid is repeatedly increased and decreased by repeating the stirring operation. Therefore, the coating liquid is stirred on the peripheral portion of the substrate W. As shown in FIG. In this way, the coating liquid on the peripheral portion of the substrate W becomes uniform, and the formed coating film is almost flat.
又,若基板W長時間高速旋轉,則於基板W之周緣部會產生促進塗布液乾燥之亂流。於此種情形時,所形成之塗布膜厚度局部變大,塗布膜局部凸起。對此,根據上述構成,藉由反覆進行攪拌動作,從而抑制於基板W之周緣部產生亂流,防止促進塗布液之乾燥。就結果而言,能夠提高形成於基板W周緣部之塗布膜厚度之均勻性。Also, if the substrate W is rotated at high speed for a long time, a turbulent flow that promotes drying of the coating liquid will be generated on the peripheral edge of the substrate W. In such a case, the thickness of the formed coating film becomes locally large, and the coating film is partially raised. On the other hand, according to the above configuration, by repeating the stirring operation, generation of turbulent flow in the peripheral portion of the substrate W is suppressed, and drying of the coating liquid is prevented from being accelerated. As a result, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate W can be improved.
於各攪拌動作中,基板W之旋轉加速度之絕對值為基板W之旋轉減速度之絕對值以上。於此種情形時,由於基板W之旋轉加速度較大,故而能夠縮短基板W高速旋轉之時間。因此,更加容易地防止促進塗布液之乾燥。如此一來,更加容易地提高形成於基板W周緣部之塗布膜厚度之均勻性。In each stirring operation, the absolute value of the rotational acceleration of the substrate W is equal to or greater than the absolute value of the rotational deceleration of the substrate W. In this case, since the rotational acceleration of the substrate W is high, the time for the substrate W to rotate at a high speed can be shortened. Therefore, it is easier to prevent accelerated drying of the coating liquid. In this way, the uniformity of the thickness of the coating film formed on the peripheral portion of the substrate W can be improved more easily.
又,向外掃描之塗布噴嘴31之移動速度大於向內掃描之塗布噴嘴31之移動速度。於此種情形時,能夠增大基板W之周緣部外緣處塗布膜之厚度。因此,形成於基板W之周緣部之塗布膜近乎平坦。如此一來,能夠更加提高形成於基板W周緣部之塗布膜厚度之均勻性。Also, the moving speed of the
(5)另一實施方式 (a)上述實施方式中,雖於反覆進行2次以上之攪拌動作之中,省略執行最後攪拌動作中之速度維持步驟,但實施方式並不限定於此。亦可執行最後攪拌動作之速度維持步驟。(5) Another embodiment (a) In the above-mentioned embodiment, the step of maintaining the speed in the last stirring operation is omitted when the stirring operation is repeated twice or more, but the embodiment is not limited thereto. A speed maintenance step for the final stirring action may also be performed.
(b)上述實施方式中,基板W之旋轉減速度之絕對值雖為基板W之旋轉加速度之絕對值以下,但實施方式並不限定於此。基板W之旋轉減速度之絕對值亦可大於基板W之旋轉加速度之絕對值。(b) In the above embodiment, the absolute value of the rotational deceleration of the substrate W is equal to or less than the absolute value of the rotational acceleration of the substrate W, but the embodiment is not limited thereto. The absolute value of the rotational deceleration of the substrate W may also be greater than the absolute value of the rotational acceleration of the substrate W.
(c)上述實施方式中,向外掃描之塗布噴嘴31之移動速度雖大於向內掃描之塗布噴嘴31之移動速度,但實施方式並不限定於此。向外掃描之塗布噴嘴31之移動速度亦可為向內掃描之塗布噴嘴31之移動速度以下。又,於形成塗布膜時,亦可不進行塗布噴嘴31之向內掃描及向外掃描,而將塗布噴嘴31固定於起始位置。(c) In the above embodiment, although the moving speed of the
(d)上述實施方式中,塗布噴嘴31雖以塗布液之噴出口朝向下方之方式設置為直立狀態,但實施方式並不限定於此。塗布噴嘴31亦可以塗布液之噴出口朝向斜下外側之方式設置為傾斜狀態。(d) In the above-mentioned embodiment, although the
(6)實施例 第1實施例中,當改變速度維持步驟之持續時間時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖9係表示第1實施例之測定結果之曲線圖。圖9之橫軸表示速度維持步驟之持續時間,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。再者,第1實施方式中,攪拌動作之反覆步驟為5次,下述第3~第6實施方式中亦同樣如此。(6) Embodiment In the first embodiment, when the duration of the speed maintaining step was changed, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured. Fig. 9 is a graph showing the measurement results of the first example. The horizontal axis of FIG. 9 represents the duration of the speed maintaining step, and the vertical axis represents the average film thickness h1, the bump thickness h2, or the film thickness ratio. In addition, in the first embodiment, the repetition procedure of the stirring operation is five times, and the same is true in the third to sixth embodiments described below.
如圖9所示,若延長速度維持步驟之持續時間,則平均膜厚h1變大,而隆起厚度h2幾乎不變。就結果而言,若延長速度維持步驟之持續時間,則膜厚比變小。因此確認了,藉由延長速度維持步驟之持續時間,從而能夠使膜厚比變小。As shown in FIG. 9, when the duration of the speed maintaining step is prolonged, the average film thickness h1 becomes larger, while the bump thickness h2 hardly changes. As a result, when the duration of the speed maintaining step is prolonged, the film thickness ratio becomes smaller. Therefore, it was confirmed that the film thickness ratio can be reduced by extending the duration of the speed maintaining step.
第2實施例中,當改變攪拌動作之執行次數時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖10係表示第2實施例之測定結果之曲線圖。圖10之橫軸表示攪拌動作之執行次數,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。In the second embodiment, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured when the number of stirring operations performed was changed. Fig. 10 is a graph showing the measurement results of the second example. The horizontal axis of FIG. 10 represents the number of execution times of the stirring operation, and the vertical axis represents the average film thickness h1, the raised thickness h2 or the film thickness ratio.
如圖10所示,儘管改變攪拌動作之執行次數,平均膜厚h1仍幾乎不變。另一方面,若增加攪拌動作之執行次數,則隆起厚度h2變小,若攪拌動作之執行次數達到固定次數以上,則隆起厚度h2幾乎不變。就結果而言,若增加攪拌動作之執行次數,則膜厚比變小,若攪拌動作之執行次數達到固定次數以上,則膜厚比幾乎不變。因此確認了,藉由反覆進行固定次數之攪拌動作,從而能夠維持平均膜厚h1且使膜厚比變小。As shown in FIG. 10, the average film thickness h1 remained almost unchanged even though the number of times the stirring operation was performed was changed. On the other hand, when the number of stirring operations is increased, the raised thickness h2 becomes smaller, and when the number of times of stirring operations exceeds a fixed number, the raised thickness h2 hardly changes. As a result, the film thickness ratio becomes smaller as the number of stirring operations is increased, and the film thickness ratio hardly changes when the number of stirring operations is performed more than a fixed number of times. Therefore, it was confirmed that the average film thickness h1 can be maintained and the film thickness ratio can be reduced by repeating the stirring operation for a fixed number of times.
第3實施例中,當改變加速步驟後基板W之轉速時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖11係表示第3實施例之測定結果之曲線圖。圖11之橫軸表示加速步驟後基板W之轉速,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。In the third embodiment, when the rotation speed of the substrate W after the acceleration step was changed, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured. Fig. 11 is a graph showing the measurement results of the third example. The horizontal axis of FIG. 11 represents the rotational speed of the substrate W after the acceleration step, and the vertical axis represents the average film thickness h1, the bump thickness h2 or the film thickness ratio.
如圖11所示,若增大加速步驟後基板W之轉速,則平均膜厚h1及隆起厚度h2變小。就結果而言,儘管增大加速步驟後基板W之轉速,膜厚比仍幾乎不變。因此確認了,加速步驟後基板W之轉速對於減小膜厚比而言幾乎不起作用。As shown in FIG. 11 , when the rotation speed of the substrate W after the acceleration step is increased, the average film thickness h1 and the bump thickness h2 become smaller. As a result, the film thickness ratio remained almost unchanged even though the rotation speed of the substrate W after the acceleration step was increased. Therefore, it was confirmed that the rotation speed of the substrate W after the acceleration step has little effect on reducing the film thickness ratio.
第4實施例中,當改變基板W之旋轉加速度時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖12係表示第4實施例之測定結果之曲線圖。圖12之橫軸表示基板W之旋轉加速度,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。In the fourth example, when the rotational acceleration of the substrate W was changed, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured. Fig. 12 is a graph showing the measurement results of the fourth example. The horizontal axis of FIG. 12 represents the rotational acceleration of the substrate W, and the vertical axis represents the average film thickness h1, the bump thickness h2, or the film thickness ratio.
如圖12所示,若提高基板W之旋轉加速度,則平均膜厚h1變大,若旋轉加速度達到固定值以上,則平均膜厚h1幾乎不變。另一方面,儘管提高旋轉加速度,隆起厚度h2仍幾乎不變。就結果而言,若提高旋轉加速度,則膜厚比變小,若旋轉加速度達到固定值以上,則膜厚比幾乎不變。因此確認了,藉由使基板W之旋轉加速度為固定值以上,從而能夠使膜厚比變小。As shown in FIG. 12 , when the rotational acceleration of the substrate W is increased, the average film thickness h1 increases, and when the rotational acceleration exceeds a fixed value, the average film thickness h1 hardly changes. On the other hand, the bump thickness h2 hardly changes despite increasing the rotational acceleration. As a result, when the rotational acceleration is increased, the film thickness ratio becomes small, and when the rotational acceleration exceeds a fixed value, the film thickness ratio hardly changes. Therefore, it was confirmed that the film thickness ratio can be reduced by setting the rotational acceleration of the substrate W to a constant value or more.
第5實施例中,當改變速度維持步驟中基板W之轉速時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖13係表示第5實施例之測定結果之曲線圖。圖13之橫軸表示速度維持步驟中基板W之轉速,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。In the fifth embodiment, when changing the rotation speed of the substrate W in the speed maintaining step, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured. Fig. 13 is a graph showing the measurement results of the fifth example. The horizontal axis of FIG. 13 represents the rotational speed of the substrate W in the speed maintaining step, and the vertical axis represents the average film thickness h1, the bump thickness h2, or the film thickness ratio.
如圖13所示,若增大速度維持步驟中基板W之轉速,則平均膜厚h1變小,隆起厚度h2變大。就結果而言,若增大速度維持步驟中基板W之轉速,則膜厚比變小。因此確認了,藉由減小速度維持步驟中基板W之轉速,從而能夠使膜厚比變小。As shown in FIG. 13 , when the rotation speed of the substrate W in the speed maintenance step is increased, the average film thickness h1 becomes smaller and the bump thickness h2 becomes larger. As a result, if the rotation speed of the substrate W in the speed maintenance step is increased, the film thickness ratio becomes smaller. Therefore, it was confirmed that the film thickness ratio can be reduced by reducing the rotational speed of the substrate W in the speed maintaining step.
第6實施例中,當改變噴出步驟中基板W之轉速時,測定平均膜厚h1、隆起厚度h2及膜厚比之變化。圖14係表示第6實施例之測定結果之曲線圖。圖14之橫軸表示噴出步驟中基板W之轉速,縱軸表示平均膜厚h1、隆起厚度h2或膜厚比。In the sixth embodiment, when the rotation speed of the substrate W in the discharge step was changed, changes in the average film thickness h1, the bump thickness h2, and the film thickness ratio were measured. Fig. 14 is a graph showing the measurement results of the sixth example. The horizontal axis of FIG. 14 represents the rotation speed of the substrate W in the discharge step, and the vertical axis represents the average film thickness h1, the raised thickness h2, or the film thickness ratio.
如圖14所示,儘管增大噴出步驟中基板W之轉速,平均膜厚h1仍不變,且隆起厚度h2幾乎不變。就結果而言,儘管增大噴出步驟中基板W之轉速,膜厚比仍幾乎不變。因此確認了,噴出步驟中基板W之轉速對於減小膜厚比而言幾乎不起作用。As shown in FIG. 14, even though the rotation speed of the substrate W in the ejection step was increased, the average film thickness h1 remained unchanged, and the bump thickness h2 hardly changed. As a result, the film thickness ratio remained almost unchanged even though the rotation speed of the substrate W in the ejection step was increased. Therefore, it was confirmed that the rotation speed of the substrate W in the ejection step hardly contributes to reducing the film thickness ratio.
(7)請求項之各構成要素與實施方式之各要素之對應關係
上述實施方式中,旋轉保持部10係旋轉保持部之例,塗布液供給部30係塗布液供給部之例,控制部50係控制部之例,塗布噴嘴31係塗布噴嘴之例。(7) Correspondence between each constituent element of the claim and each element of the embodiment
In the above embodiment, the
10:旋轉保持部
11:旋轉吸盤
12:馬達
12a:旋轉軸
20:護罩
21:開口部
22:廢液口
23:排氣口
30:塗布液供給部
31:塗布噴嘴
32:塗布液貯存部
33:配管
34:閥
40:清洗液供給部
41:後部清洗液噴嘴
42:清洗液貯存部
43:配管
44:閥
50:控制部
100:周緣部塗布裝置
A:箭頭
B:箭頭
h1:平均膜厚
h2:隆起厚度
W:基板10: Rotation holding part
11:Rotary suction cup
12:
圖1係本發明之一實施方式之周緣部塗布裝置之概略剖視圖。 圖2係表示基板處理步驟中基板之側視圖。 圖3係表示基板處理步驟中基板之側視圖。 圖4係表示基板處理步驟中基板之側視圖。 圖5係表示基板處理步驟中基板之側視圖。 圖6係表示基板處理步驟中基板之側視圖。 圖7係表示基板處理後基板之側視圖。 圖8係表示基板處理步驟中基板轉速變化之圖。 圖9係表示第1實施例之測定結果之曲線圖。 圖10係表示第2實施例之測定結果之曲線圖。 圖11係表示第3實施例之測定結果之曲線圖。 圖12係表示第4實施例之測定結果之曲線圖。 圖13係表示第5實施例之測定結果之曲線圖。 圖14係表示第6實施例之測定結果之曲線圖。Fig. 1 is a schematic cross-sectional view of a peripheral portion coating device according to an embodiment of the present invention. Fig. 2 is a side view showing a substrate in a substrate processing step. Fig. 3 is a side view showing a substrate in a substrate processing step. Fig. 4 is a side view showing a substrate in a substrate processing step. Fig. 5 is a side view showing a substrate in a substrate processing step. Fig. 6 is a side view showing a substrate in a substrate processing step. Fig. 7 is a side view showing a substrate after substrate processing. FIG. 8 is a graph showing changes in the rotational speed of a substrate in a substrate processing step. Fig. 9 is a graph showing the measurement results of the first example. Fig. 10 is a graph showing the measurement results of the second example. Fig. 11 is a graph showing the measurement results of the third example. Fig. 12 is a graph showing the measurement results of the fourth example. Fig. 13 is a graph showing the measurement results of the fifth example. Fig. 14 is a graph showing the measurement results of the sixth example.
10:旋轉保持部 10: Rotation holding part
11:旋轉吸盤 11:Rotary suction cup
12:馬達 12: Motor
12a:旋轉軸 12a: axis of rotation
20:護罩 20: shield
21:開口部 21: opening
22:廢液口 22: Waste liquid port
23:排氣口 23: Exhaust port
30:塗布液供給部 30: Coating liquid supply part
31:塗布噴嘴 31: coating nozzle
32:塗布液貯存部 32: Coating liquid storage part
33:配管 33: Piping
34:閥 34: valve
40:清洗液供給部 40:Cleaning solution supply part
41:後部清洗液噴嘴 41: Rear washer fluid nozzle
42:清洗液貯存部 42: Cleaning solution storage part
43:配管 43: Piping
44:閥 44: valve
50:控制部 50: Control Department
100:周緣部塗布裝置 100: Peripheral coating device
W:基板 W: Substrate
Claims (12)
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| JP2020094883A JP7469145B2 (en) | 2020-05-29 | 2020-05-29 | Edge coating device and edge coating method |
| JP2020-094883 | 2020-05-29 |
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| KR (1) | KR102483535B1 (en) |
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- 2021-05-26 KR KR1020210067583A patent/KR102483535B1/en active Active
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| TW333663B (en) * | 1997-10-01 | 1998-06-11 | Vanguard Int Semiconduct Corp | The method for uniformly coating photoresist |
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| JP2021190572A (en) | 2021-12-13 |
| TW202201485A (en) | 2022-01-01 |
| KR102483535B1 (en) | 2023-01-02 |
| KR20210147940A (en) | 2021-12-07 |
| CN113731673A (en) | 2021-12-03 |
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