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TWI784806B - Bias circuit and signal amplification device - Google Patents

Bias circuit and signal amplification device Download PDF

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Publication number
TWI784806B
TWI784806B TW110143374A TW110143374A TWI784806B TW I784806 B TWI784806 B TW I784806B TW 110143374 A TW110143374 A TW 110143374A TW 110143374 A TW110143374 A TW 110143374A TW I784806 B TWI784806 B TW I784806B
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voltage
circuit
terminal
mirror
coupled
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TW110143374A
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Chinese (zh)
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TW202222031A (en
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彭天雲
陳智聖
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立積電子股份有限公司
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Priority to CN202111408710.4A priority Critical patent/CN114564065B/en
Priority to EP21210672.8A priority patent/EP4007163A1/en
Priority to US17/535,701 priority patent/US12184251B2/en
Publication of TW202222031A publication Critical patent/TW202222031A/en
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Publication of TWI784806B publication Critical patent/TWI784806B/en

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Abstract

A bias circuit includes a current mirror circuit, an operational amplifier, and a bias signal generating circuit. The current mirror circuit includes a reference branch circuit and at least one mirror branch circuit. The reference branch circuit generates a reference current according to a base current, and the at least one mirror branch circuit generates at least one mirrored current according to the reference current. The operational amplifier is coupled to the reference branch circuit and the at least one mirror branch circuit, receives a first voltage and a second voltage, and adjusts the first voltage by generating a control voltage according to the second voltage. The bias signal generating circuit is coupled to the at least one mirror branch circuit and generates a bias signal according to the at least one mirrored current. The first voltage is a voltage on the reference branch circuit. The second voltage is a voltage on the at least one mirror branch circuit or an adjusted version of the voltage on the at least one mirror branch circuit.

Description

偏壓電路及訊號放大裝置 Bias circuit and signal amplifier

本發明是有關於一種偏壓電路,特別是一種能夠根據鏡射電流產生穩定的偏壓訊號的偏壓電路。 The invention relates to a bias circuit, in particular to a bias circuit capable of generating a stable bias signal according to mirror current.

理想上,電壓源是用以提供具有固定電壓值的參考電壓,以使偏壓電路可根據參考電壓來產生偏壓訊號。然而,因為製程上無法控制的變異或其他因素,參考電壓的電壓值可能會出現偏移(offset),連帶影響偏壓訊號的穩定性。 Ideally, the voltage source is used to provide a reference voltage with a fixed voltage value, so that the bias circuit can generate a bias signal according to the reference voltage. However, due to uncontrollable variations in the manufacturing process or other factors, the voltage value of the reference voltage may be offset, which affects the stability of the bias signal.

本發明之一實施例提供一種偏壓電路,偏壓電路包含電流鏡射電路、運算放大器及偏壓訊號產生電路。電流鏡射電路包含參考分支電路及至少一鏡射分支電路。參考分支電路根據基準電流產生參考電流,而至少一鏡射分支電路根據參考電流產生至少一鏡射電流。運算放大器耦接參考分支電路及至少一鏡射分支電路,接收第一電壓及第二電壓,並根據第二電壓產生控制電壓以調節第一電壓。偏壓訊號產生電路耦接至少一鏡射分支電路,並根據至少一鏡射電流產生偏壓訊號。第一電壓為參考分支電路上的電壓,第二電壓為至少一鏡射分支電路上的電壓或經調節的至少一鏡射分支電路上的電壓。 An embodiment of the present invention provides a bias circuit, which includes a current mirror circuit, an operational amplifier, and a bias signal generating circuit. The current mirror circuit includes a reference branch circuit and at least one mirror branch circuit. The reference branch circuit generates a reference current according to the reference current, and at least one mirror branch circuit generates at least one mirror current according to the reference current. The operational amplifier is coupled to the reference branch circuit and at least one mirror branch circuit, receives the first voltage and the second voltage, and generates a control voltage according to the second voltage to adjust the first voltage. The bias signal generating circuit is coupled to at least one mirror branch circuit, and generates a bias signal according to at least one mirror current. The first voltage is the voltage on the reference branch circuit, and the second voltage is the voltage on at least one mirroring branch circuit or the adjusted voltage on at least one mirroring branch circuit.

本發明之另一實施例提供一種訊號放大裝置。訊號放大裝置包含偏 壓電路、輸入端、輸出端及放大器。偏壓電路包含電流鏡射電路、運算放大器及偏壓訊號產生電路。電流鏡射電路接收參考電壓,並包含參考分支電路及至少一鏡射分支電路。參考分支電路根據基準電流產生參考電流,而至少一鏡射分支電路根據參考電流產生至少一鏡射電流。運算放大器耦接參考分支電路及至少一鏡射分支電路,接收第一電壓及第二電壓,並根據參第二電壓產生一控制電壓以調節第一電壓。偏壓訊號產生電路耦接至少一鏡射分支電路,並根據至少一鏡射電流產生偏壓訊號。第一電壓為參考分支電路上的電壓,第二電壓為至少一鏡射分支電路上的電壓或經調節的至少一鏡射分支電路上的電壓。輸入端接收射頻訊號,而輸出端輸出放大後之射頻訊號。放大器耦接訊號放大裝置的輸入端與訊號放大裝置的輸出端之間,接收偏壓訊號及放大射頻訊號。 Another embodiment of the present invention provides a signal amplifying device. The signal amplifying device includes partial Pressure circuit, input terminal, output terminal and amplifier. The bias circuit includes a current mirror circuit, an operational amplifier and a bias signal generating circuit. The current mirror circuit receives a reference voltage and includes a reference branch circuit and at least one mirror branch circuit. The reference branch circuit generates a reference current according to the reference current, and at least one mirror branch circuit generates at least one mirror current according to the reference current. The operational amplifier is coupled to the reference branch circuit and at least one mirror branch circuit, receives the first voltage and the second voltage, and generates a control voltage according to the reference second voltage to adjust the first voltage. The bias signal generating circuit is coupled to at least one mirror branch circuit, and generates a bias signal according to at least one mirror current. The first voltage is the voltage on the reference branch circuit, and the second voltage is the voltage on at least one mirroring branch circuit or the adjusted voltage on at least one mirroring branch circuit. The input terminal receives the radio frequency signal, and the output terminal outputs the amplified radio frequency signal. The amplifier is coupled between the input terminal of the signal amplifying device and the output terminal of the signal amplifying device, receives the bias voltage signal and amplifies the radio frequency signal.

10、20:訊號放大裝置 10, 20: Signal amplification device

100至500、1001至1003、2001至2003:偏壓電路 100 to 500, 1001 to 1003, 2001 to 2003: bias circuit

110、510:電流鏡射電路 110, 510: current mirror circuit

112、512:參考分支電路 112, 512: reference branch circuit

114、514、516:鏡射分支電路 114, 514, 516: mirror branch circuits

120、520:運算放大器 120, 520: operational amplifier

130、530:偏壓訊號產生電路 130, 530: bias signal generation circuit

132、532、560:穩壓電路 132, 532, 560: regulator circuit

240、440、540:啟動電路 240, 440, 540: start circuit

350、450、550:電壓選擇電路 350, 450, 550: voltage selection circuit

671至673、771、772:低壓降穩壓器 671 to 673, 771, 772: Low Dropout Regulators

AMP、AMP1至AMP3:放大器 AMP, AMP1 to AMP3: Amplifiers

C1A、C2A、C1B至C4B、C0:電容 C1A, C2A, C1B to C4B, C0: capacitance

CSA、CSB:電流源 CSA, CSB: current source

D1A、D2A、D1B至D4B:二極體 D1A, D2A, D1B to D4B: Diodes

IB:基準電流 IB: Reference current

Im1、Im2:鏡射電流 Im1, Im2: mirror current

Iref:參考電流 Iref: reference current

Is:啟動電流 Is: starting current

N1至N3:節點 N1 to N3: nodes

NB、NB1至NB3:偏壓端 NB, NB1 to NB3: Bias terminals

P1:對外接腳 P1: external pin

R1A至R3A、R1B至R4B:電阻 R1A to R3A, R1B to R4B: Resistors

RFIN:輸入端 RFIN: input terminal

RFOUT:輸出端 RFOUT: output terminal

Sbias、Sbias1至Sbias3:偏壓訊號 Sbias, Sbias1 to Sbias3: Bias signal

Srf1、Srf2:射頻訊號 Srf1, Srf2: RF signal

T1A至T5A、T1B至T6B:電晶體 T1A to T5A, T1B to T6B: Transistors

V1:第一電壓 V1: first voltage

V2:第二電壓 V2: second voltage

Vctrl:控制電壓 Vctrl: control voltage

VDD1、VDD2:操作電壓端 VDD1, VDD2: operating voltage terminal

VN1至VN3:電壓 VN1 to VN3: voltage

VR1至VR3:參考電壓 VR1 to VR3: Reference voltage

Vref、Vref1至Vref3:參考電壓端 Vref, Vref1 to Vref3: reference voltage terminals

Vset1:第一預設電壓 Vset1: the first preset voltage

Vset2:第二預設電壓 Vset2: the second preset voltage

VSP:供應電壓端 VSP: supply voltage terminal

VSS:基準電壓端 VSS: reference voltage terminal

第1圖是本發明一實施例之偏壓電路的示意圖。 Fig. 1 is a schematic diagram of a bias circuit according to an embodiment of the present invention.

第2圖是本發明另一實施例之偏壓電路的示意圖。 Fig. 2 is a schematic diagram of a bias circuit according to another embodiment of the present invention.

第3圖是本發明另一實施例之偏壓電路的示意圖。 Fig. 3 is a schematic diagram of a bias circuit according to another embodiment of the present invention.

第4圖是本發明另一實施例之偏壓電路的示意圖。 FIG. 4 is a schematic diagram of a bias circuit according to another embodiment of the present invention.

第5圖是本發明另一實施例之偏壓電路的示意圖。 Fig. 5 is a schematic diagram of a bias circuit according to another embodiment of the present invention.

第6圖是本發明一實施例之訊號放大裝置的示意圖。 Fig. 6 is a schematic diagram of a signal amplifying device according to an embodiment of the present invention.

第7圖是本發明另一實施例之訊號放大裝置的示意圖。 Fig. 7 is a schematic diagram of a signal amplifying device according to another embodiment of the present invention.

第1圖是本發明一實施例之偏壓電路100的示意圖。偏壓電路100包含電流鏡射電路110、運算放大器120及偏壓訊號產生電路130。 FIG. 1 is a schematic diagram of a bias circuit 100 according to an embodiment of the present invention. The bias circuit 100 includes a current mirror circuit 110 , an operational amplifier 120 and a bias signal generating circuit 130 .

電流鏡射電路110可包含參考分支電路112及鏡射分支電路114。參考分支電路112可以根據基準電流IB產生參考電流Iref,而鏡射分支電路114可以根據參考電流Iref產生鏡射電流Im1。 The current mirror circuit 110 can include a reference branch circuit 112 and a mirror branch circuit 114 . The reference subcircuit 112 can generate the reference current Iref according to the reference current IB, and the mirror subcircuit 114 can generate the mirror current Im1 according to the reference current Iref.

運算放大器120可耦接參考分支電路112及鏡射分支電路114,用以接收第一電壓V1及第二電壓V2,並可用以根據第二電壓V2產生控制電壓Vctrl以調節第一電壓V1,使第一電壓V1及第二電壓V2趨於相等。在有些實施例中,第一電壓V1可以是參考分支電路112上的電壓,第二電壓V2可以是鏡射分支電路114上的電壓或是經調節的鏡射分支電路114上的電壓。偏壓訊號產生電路130可耦接於鏡射分支電路114,並可根據鏡射電流Im1產生偏壓訊號Sbias。 The operational amplifier 120 can be coupled to the reference branch circuit 112 and the mirror branch circuit 114 to receive the first voltage V1 and the second voltage V2, and can be used to generate the control voltage Vctrl according to the second voltage V2 to adjust the first voltage V1, so that The first voltage V1 and the second voltage V2 tend to be equal. In some embodiments, the first voltage V1 may be the voltage on the reference sub-circuit 112 , and the second voltage V2 may be the voltage on the mirroring sub-circuit 114 or the voltage on the regulated mirroring sub-circuit 114 . The bias signal generating circuit 130 can be coupled to the mirror branch circuit 114 and can generate a bias signal Sbias according to the mirror current Im1.

在有些實施例中,偏壓訊號產生電路130可以將偏壓訊號Sbias提供至放大器AMP。舉例來說,放大器AMP可將自輸入端RFIN接收的射頻訊號Srf1放大以自輸出端RFOUT輸出放大後的射頻訊號Srf2,而偏壓訊號產生電路130可將偏壓訊號Sbias輸出至放大器AMP的偏壓端NB,使得放大器AMP能夠操作在適當的偏壓,以維持放大器AMP的性能表現。在有些實施例中,偏壓訊號Sbias可為電流訊號。 In some embodiments, the bias signal generating circuit 130 can provide the bias signal Sbias to the amplifier AMP. For example, the amplifier AMP can amplify the radio frequency signal Srf1 received from the input terminal RFIN to output the amplified radio frequency signal Srf2 from the output terminal RFOUT, and the bias signal generating circuit 130 can output the bias signal Sbias to the bias signal of the amplifier AMP. The voltage terminal NB enables the amplifier AMP to operate at a proper bias voltage to maintain the performance of the amplifier AMP. In some embodiments, the bias signal Sbias can be a current signal.

在第1圖中,電流鏡射電路110還可包含電流源CSA及電晶體T3A,而參考分支電路112可包含節點N1、電晶體T1A及T4A。電流源CSA可耦接於操作電壓端VDD1用以產生基準電流IB。電晶體T3A具有第一端、第二端及控制端。電晶體T3A的第一端可耦接於電流源CSA用以接收基準電流IB,電晶體T3A的第二端可耦接於基準電壓端VSS,而電晶體T3A的控制端可耦接於電晶體T3A的第一端。節點N1可設置於電晶體T1A及T4A之間。電晶體T1A可具有第一端、第二端及控制端。電晶體T1A的第一端可耦接參考電壓端Vref,電晶體T1A的第二端可耦接於節點N1。電晶體T4A具有第一端、第二端及控制端。電晶體T4A的第一端可耦接於節點N1,電晶體T4A的第二端可耦接於基準電壓端VSS,而電晶體 T4A的控制端可耦接於電晶體T3A的控制端。也就是說,電晶體T3A及T4A可以形成電流鏡的結構,用於鏡射基準電流IB以產生參考電流Iref。 In FIG. 1 , the current mirror circuit 110 may further include a current source CSA and a transistor T3A, and the reference branch circuit 112 may include a node N1 , transistors T1A and T4A. The current source CSA can be coupled to the operating voltage terminal VDD1 for generating the reference current IB. The transistor T3A has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T3A can be coupled to the current source CSA to receive the reference current IB, the second terminal of the transistor T3A can be coupled to the reference voltage terminal VSS, and the control terminal of the transistor T3A can be coupled to the transistor The first end of T3A. The node N1 can be disposed between the transistors T1A and T4A. The transistor T1A may have a first terminal, a second terminal and a control terminal. The first terminal of the transistor T1A can be coupled to the reference voltage terminal Vref, and the second terminal of the transistor T1A can be coupled to the node N1. The transistor T4A has a first terminal, a second terminal and a control terminal. The first end of the transistor T4A can be coupled to the node N1, the second end of the transistor T4A can be coupled to the reference voltage terminal VSS, and the transistor The control terminal of T4A can be coupled to the control terminal of transistor T3A. That is to say, the transistors T3A and T4A can form a current mirror structure for mirroring the reference current IB to generate the reference current Iref.

此外,鏡射分支電路114可包含節點N2及電晶體T2A。節點N2可設置於電晶體T2A及偏壓訊號產生電路130之間。電晶體T2A具有第一端、第二端及控制端。電晶體T2A的第一端可耦接於參考電壓端Vref,電晶體T2A的第二端可耦接於節點N2,而電晶體T2A的控制端可耦接於電晶體T1A的控制端。如此一來,電晶體T1A的控制端和第一端之間的電壓差可實質上相等於電晶體T2A的控制端和第一端之間的電壓差,且電晶體T1A及T2A可形成電流鏡的結構,用於鏡射參考電流Iref以產生鏡射電流Im1。在有些實施例中,設計者可以選擇電晶體T1A與T2A的尺寸(即電晶體T1A與T2A的寬長比),以調整參考電流Iref及鏡射電流Im1之間的比例。舉例來說,電晶體T2A的尺寸可大於電晶體T1A的尺寸,以使鏡射電流Im1大於參考電流Iref。 In addition, the mirror branch circuit 114 may include a node N2 and a transistor T2A. The node N2 can be disposed between the transistor T2A and the bias signal generating circuit 130 . The transistor T2A has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T2A can be coupled to the reference voltage terminal Vref, the second terminal of the transistor T2A can be coupled to the node N2, and the control terminal of the transistor T2A can be coupled to the control terminal of the transistor T1A. In this way, the voltage difference between the control terminal and the first terminal of the transistor T1A can be substantially equal to the voltage difference between the control terminal and the first terminal of the transistor T2A, and the transistors T1A and T2A can form a current mirror The structure of is used to mirror the reference current Iref to generate the mirror current Im1. In some embodiments, the designer can select the size of the transistors T1A and T2A (ie, the width-to-length ratio of the transistors T1A and T2A) to adjust the ratio between the reference current Iref and the mirror current Im1. For example, the size of the transistor T2A can be larger than that of the transistor T1A, so that the mirror current Im1 is larger than the reference current Iref.

在第1圖中,運算放大器120可具有第一輸入端、第二輸入端及輸出端。運算放大器120的第一輸入端可耦接於節點N1,運算放大器120的第二輸入端可耦接於節點N2,而運算放大器120的輸出端可耦接電晶體T1A的控制端及電晶體T2A的控制端。第1圖是以第一電壓V1為節點N1上的電壓VN1(即參考分支電路112上的電壓),而第二電壓V2為節點N2上的電壓VN2(即鏡射分支電路114上的電壓)作為範例說明。 In FIG. 1 , the operational amplifier 120 may have a first input terminal, a second input terminal and an output terminal. The first input terminal of the operational amplifier 120 can be coupled to the node N1, the second input terminal of the operational amplifier 120 can be coupled to the node N2, and the output terminal of the operational amplifier 120 can be coupled to the control terminal of the transistor T1A and the transistor T2A. the control terminal. In Fig. 1, the first voltage V1 is the voltage VN1 on the node N1 (ie, the voltage on the reference branch circuit 112), and the second voltage V2 is the voltage VN2 on the node N2 (ie, the voltage on the mirror branch circuit 114) As an example.

在有些實施例中,偏壓訊號產生電路130可包含穩壓電路132、電晶體T5A、電阻R1A及電容C1A。穩壓電路132具有第一端及第二端。穩壓電路132的第一端可耦接於節點N2,穩壓電路132的第二端可耦接於基準電壓端VSS。穩壓電路132可包含電阻R2A、二極體D1A及D2A。電阻R2A具有第一端及第二端。電阻R2A的第一端可耦接於穩壓電路132的第一端。二極體D1A具有第一端及第二端。二極體D1A的第一端可耦接於電阻R2A的第二端。二極體D2A具有第一端 及第二端。二極體D2A的第一端可耦接於二極體D1A的第二端,而二極體D2A的第二端可耦接於穩壓電路132的第二端。電晶體T5A具有第一端、第二端及控制端。電晶體T5A的第一端可耦接於操作電壓端VDD2,電晶體T5A的控制端可耦接於電阻R2A的第二端。電阻R1A具有第一端及第二端。電阻R1A的第一端可耦接於電晶體T5A的第二端,而電阻R1A的第二端可耦接於放大器AMP的偏壓端NB並可用於輸出偏壓訊號Sbias。電容C1A具有第一端及第二端。電容C1A的第一端可耦接於電晶體T5A的控制端,而電容C1A的第二端可耦接至基準電壓端VSS。 In some embodiments, the bias signal generating circuit 130 may include a voltage stabilizing circuit 132 , a transistor T5A, a resistor R1A, and a capacitor C1A. The voltage stabilizing circuit 132 has a first terminal and a second terminal. The first terminal of the voltage stabilizing circuit 132 can be coupled to the node N2, and the second terminal of the voltage stabilizing circuit 132 can be coupled to the reference voltage terminal VSS. The voltage stabilizing circuit 132 may include a resistor R2A, diodes D1A and D2A. The resistor R2A has a first terminal and a second terminal. The first end of the resistor R2A can be coupled to the first end of the voltage stabilizing circuit 132 . The diode D1A has a first end and a second end. The first terminal of the diode D1A can be coupled to the second terminal of the resistor R2A. Diode D2A has a first terminal and the second end. The first terminal of the diode D2A can be coupled to the second terminal of the diode D1A, and the second terminal of the diode D2A can be coupled to the second terminal of the voltage stabilizing circuit 132 . The transistor T5A has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T5A can be coupled to the operating voltage terminal VDD2, and the control terminal of the transistor T5A can be coupled to the second terminal of the resistor R2A. The resistor R1A has a first terminal and a second terminal. The first terminal of the resistor R1A can be coupled to the second terminal of the transistor T5A, and the second terminal of the resistor R1A can be coupled to the bias terminal NB of the amplifier AMP and can be used to output the bias signal Sbias. The capacitor C1A has a first terminal and a second terminal. The first terminal of the capacitor C1A can be coupled to the control terminal of the transistor T5A, and the second terminal of the capacitor C1A can be coupled to the reference voltage terminal VSS.

在有些實施例中,為使參考電流Iref能被精準地鏡射以產生穩定的鏡射電流Im1,不僅需將電晶體T1A的控制端和第一端之間的電壓差與電晶體T2A的控制端和第一端之間的電壓差設計為實質上相等,且電晶體T1A的第二端和第一端之間的電壓差與電晶體T2A的第二端和第一端之間的電壓差亦需設計為實質上相等。進一步而言,當鏡射電流Im1流經穩壓電路132時,電阻R2A會產生壓降,並將二極體D1A及D2A導通。在此情況下,第二電壓V2(也即電壓VN2)可視為電阻R2A的壓降與二極體D1A及D2A的導通電壓(turn-on voltage)的和(sum)。電晶體T1A與運算放大器120可形成負回授迴路,因此運算放大器120的第一輸入端與第二輸入端可具有虛短路(virtual short)特性。也就是說,運算放大器120產生的控制電壓Vctrl可用以使第一電壓V1跟隨第二電壓V2的變化,以當偏壓電路100操作於操作模式時,第一電壓V1及第二電壓V2可為實質上相等。如此一來,電晶體T1A的第二端和第一端之間的電壓差便可實質上相等於電晶體T2A的第二端和第一端之間的電壓差,使得參考電流Iref能夠被精準地鏡射以產生穩定的鏡射電流Im1,進而使偏壓訊號產生電路130可以據以產生穩定的偏壓訊號Sbias。 In some embodiments, in order to accurately mirror the reference current Iref to generate a stable mirror current Im1, not only the voltage difference between the control terminal and the first terminal of the transistor T1A and the control terminal of the transistor T2A need to be The voltage difference between the terminal and the first terminal is designed to be substantially equal, and the voltage difference between the second terminal and the first terminal of the transistor T1A is the same as the voltage difference between the second terminal and the first terminal of the transistor T2A They also need to be designed to be substantially equal. Furthermore, when the mirror current Im1 flows through the voltage stabilizing circuit 132 , the resistor R2A will generate a voltage drop and turn on the diodes D1A and D2A. In this case, the second voltage V2 (ie, the voltage VN2 ) can be regarded as the sum of the voltage drop of the resistor R2A and the turn-on voltages of the diodes D1A and D2A. The transistor T1A and the operational amplifier 120 can form a negative feedback loop, so the first input terminal and the second input terminal of the operational amplifier 120 can have a virtual short characteristic. That is to say, the control voltage Vctrl generated by the operational amplifier 120 can make the first voltage V1 follow the change of the second voltage V2, so that when the bias circuit 100 operates in the operation mode, the first voltage V1 and the second voltage V2 can be controlled. to be substantially equal. In this way, the voltage difference between the second terminal and the first terminal of the transistor T1A can be substantially equal to the voltage difference between the second terminal and the first terminal of the transistor T2A, so that the reference current Iref can be accurately measured. The ground is mirrored to generate a stable mirror current Im1, so that the bias signal generating circuit 130 can generate a stable bias signal Sbias accordingly.

在有些實施例中,偏壓訊號產生電路130及放大器AMP可以設置於第 一晶粒(die),而電流鏡射電路110以及運算放大器120可以設置於第二晶粒。 In some embodiments, the bias signal generating circuit 130 and the amplifier AMP can be arranged in the first One die, and the current mirror circuit 110 and the operational amplifier 120 can be disposed on the second die.

在有些實施例中,於系統剛上電時,第一電壓V1及第二電壓V2可能會為基準電壓端VSS上的電壓(例如0V)或參考電壓端Vref上的電壓(例如3V),導致電流鏡射電路110無法正常運作。為解決第一電壓V1及第二電壓V2可能會為基準電壓端VSS上的電壓之問題,偏壓電路100還可包含啟動電路,用以在偏壓電路100啟動時,使第二電壓V2具有適當的操作電位,從而據以調節第一電壓V1。 In some embodiments, when the system is just powered on, the first voltage V1 and the second voltage V2 may be the voltage on the reference voltage terminal VSS (such as 0V) or the voltage on the reference voltage terminal Vref (such as 3V), resulting in The current mirror circuit 110 cannot work normally. In order to solve the problem that the first voltage V1 and the second voltage V2 may be the voltage on the reference voltage terminal VSS, the bias circuit 100 may further include a startup circuit, which is used to make the second voltage V2 has an appropriate operating potential, so as to adjust the first voltage V1 accordingly.

第2圖是本發明另一實施例之偏壓電路200的示意圖。偏壓電路200與100具有相似的結構,並可根據相似的原理操作。然而,偏壓電路200還可包含啟動電路240。啟動電路240可耦接參考電壓端Vref及節點N2,並且可以在偏壓電路200操作於啟動模式時,產生啟動電流Is以使電壓VN2達到預設值,而第二電壓V2也將因此達到預設值而具有適當的操作電位。也就是說,第2圖是以第二電壓V2為經調節的鏡射分支電路114上的電壓作為範例說明。在有些實施例中,啟動電流Is可為脈衝訊號。如此一來,運算放大器120將可對應地輸出控制電壓Vctrl,以使第一電壓V1由初始值跟隨第二電壓V2的預設值變化,而當偏壓電路200進入操作模式時,第一電壓V1將會與第二電壓V2趨於相等。於是,電流鏡射電路110將可正常運作,使得參考電流Iref能夠被精準地鏡射以產生穩定的鏡射電流Im1,進而使偏壓訊號產生電路130能夠據以產生穩定的偏壓訊號Sbias。 FIG. 2 is a schematic diagram of a bias circuit 200 according to another embodiment of the present invention. Bias circuits 200 and 100 have similar structures and operate according to similar principles. However, the bias circuit 200 may also include a startup circuit 240 . The start-up circuit 240 can be coupled to the reference voltage terminal Vref and the node N2, and can generate a start-up current Is to make the voltage VN2 reach a preset value when the bias circuit 200 operates in the start-up mode, and the second voltage V2 will also reach a predetermined value accordingly. Preset value with proper operating potential. That is to say, FIG. 2 takes the second voltage V2 as the adjusted voltage on the mirror branch circuit 114 as an example for illustration. In some embodiments, the starting current Is can be a pulse signal. In this way, the operational amplifier 120 can correspondingly output the control voltage Vctrl, so that the first voltage V1 changes from the initial value to follow the preset value of the second voltage V2, and when the bias circuit 200 enters the operation mode, the first The voltage V1 tends to be equal to the second voltage V2. Therefore, the current mirroring circuit 110 can operate normally, so that the reference current Iref can be accurately mirrored to generate a stable mirrored current Im1, so that the bias signal generating circuit 130 can generate a stable bias signal Sbias accordingly.

不僅如此,由於啟動電路240可以在偏壓電路200啟動時,將第二電壓V2預先提升到預設值,因此可以縮短運算放大器120調節第一電壓V1的時間,並確保電流鏡射電路110能夠操作在穩定的狀態下以提供穩定的鏡射電流Im1。除此之外,放大器AMP的溫度會隨運作時間增加,導致增益降低,然而,啟動電路240在偏壓電路200啟動時產生的啟動電流Is還可用於預熱(preheat)放大器AMP,而有助於放大器AMP在後續的運作過程中能夠將增益維持在預定範圍內。 Not only that, since the start-up circuit 240 can raise the second voltage V2 to a preset value in advance when the bias circuit 200 starts up, it can shorten the time for the operational amplifier 120 to adjust the first voltage V1 and ensure that the current mirror circuit 110 Can operate in a stable state to provide a stable mirror current Im1. In addition, the temperature of the amplifier AMP will increase with the operation time, resulting in a decrease in gain. However, the start-up current Is generated by the start-up circuit 240 when the bias circuit 200 starts up can also be used to preheat the amplifier AMP, and there is It helps the amplifier AMP to maintain the gain within a predetermined range during subsequent operation.

第3圖是本發明另一實施例之偏壓電路300的示意圖。偏壓電路300與100具有相似的結構,並可根據相似的原理操作。然而偏壓電路300還可包含電壓選擇電路350。電壓選擇電路350可耦接於運算放大器120的第二輸入端及節點N2。電壓選擇電路350可根據電壓VN2設定第二電壓V2。舉例來說,當電壓VN2大於一上限電壓時,電壓選擇電路350可將第二電壓V2設定為小於或等於上限電壓的第一預設電壓Vset1。在有些實施例中,上限電壓可小於參考電壓端Vref上的電壓,而第一預設電壓Vset1可例如但不限於為2.8V。或者,當電壓VN2小於一下限電壓時,電壓選擇電路350可將第二電壓V2設定為大於或等於下限電壓的第二預設電壓Vset2。在有些實施例中,第二預設電壓Vset2可例如但不限於為2V。在有些實施例中,第一預設電壓Vset1及第二預設電壓Vset2可被設定為滿足運算放大器120的操作電壓以及電晶體T3A及T4A所形成的電流鏡的操作電壓。又或者,當電壓VN2介於上限電壓及下限電壓之間時,電壓選擇電路350則可將第二電壓V2設定為與電壓VN2相等。也就是說,第3圖是以第二電壓V2為經調節的鏡射分支電路114上的電壓或鏡射分支電路114上的電壓作為範例說明。在有些實施例中,第二電壓V2可被設定為能夠使電晶體T1A及T2A操作於飽和區(saturation region)之值。 FIG. 3 is a schematic diagram of a bias circuit 300 according to another embodiment of the present invention. Bias circuits 300 and 100 have a similar structure and operate according to similar principles. However, the bias circuit 300 may also include a voltage selection circuit 350 . The voltage selection circuit 350 can be coupled to the second input terminal of the operational amplifier 120 and the node N2. The voltage selection circuit 350 can set the second voltage V2 according to the voltage VN2. For example, when the voltage VN2 is greater than an upper limit voltage, the voltage selection circuit 350 can set the second voltage V2 to a first preset voltage Vset1 that is less than or equal to the upper limit voltage. In some embodiments, the upper limit voltage may be lower than the voltage on the reference voltage terminal Vref, and the first preset voltage Vset1 may be, for example but not limited to, 2.8V. Alternatively, when the voltage VN2 is less than the lower limit voltage, the voltage selection circuit 350 can set the second voltage V2 to a second preset voltage Vset2 greater than or equal to the lower limit voltage. In some embodiments, the second preset voltage Vset2 may be, for example but not limited to, 2V. In some embodiments, the first predetermined voltage Vset1 and the second predetermined voltage Vset2 can be set to meet the operating voltage of the operational amplifier 120 and the operating voltage of the current mirror formed by the transistors T3A and T4A. Alternatively, when the voltage VN2 is between the upper limit voltage and the lower limit voltage, the voltage selection circuit 350 can set the second voltage V2 to be equal to the voltage VN2 . That is to say, FIG. 3 takes the second voltage V2 as the adjusted voltage on the mirroring branch circuit 114 or the voltage on the mirroring branch circuit 114 as an example for illustration. In some embodiments, the second voltage V2 can be set to a value enabling the transistors T1A and T2A to operate in a saturation region.

由於電壓選擇電路350可以根據電壓VN2的大小來調節第二電壓V2,因此可以在偏壓電路300啟動時,將第二電壓V2設定為適當的電壓值,從而使運算放大器120能夠據以調節第一電壓V1,而當偏壓電路300進入操作模式時,第一電壓V1將會與第二電壓V2趨於相等。如此一來,不僅可解決第1圖中,第一電壓V1及第二電壓V2可能會為基準電壓端VSS上的電壓或參考電壓端Vref上的電壓之問題,亦可縮短運算放大器120調節第一電壓V1的時間,並確保電流鏡射電路110能夠操作在穩定的狀態下以提供穩定的鏡射電流Im1。 Since the voltage selection circuit 350 can adjust the second voltage V2 according to the magnitude of the voltage VN2, the second voltage V2 can be set to an appropriate voltage value when the bias circuit 300 starts, so that the operational amplifier 120 can adjust accordingly The first voltage V1, and when the bias circuit 300 enters the operation mode, the first voltage V1 will tend to be equal to the second voltage V2. In this way, it can not only solve the problem that the first voltage V1 and the second voltage V2 may be the voltage on the reference voltage terminal VSS or the voltage on the reference voltage terminal Vref in the first figure, but also shorten the operation amplifier 120 to adjust the first voltage. A voltage V1, and ensure that the current mirror circuit 110 can operate in a stable state to provide a stable mirror current Im1.

第4圖是本發明另一實施例之偏壓電路400的示意圖。偏壓電路400與 偏壓電路200及300具有相似的結構,並可根據相似的原理操作。然而,偏壓電路400可包含啟動電路440及電壓選擇電路450。舉例來說,偏壓電路400在啟動模式中,不僅可以利用電壓選擇電450來根據電壓VN2設定第二電壓V2,還可利用啟動電路440來預熱放大器AMP。如此一來,不僅可解決第1圖中,第一電壓V1及第二電壓V2可能會為基準電壓端VSS上的電壓或參考電壓端Vref上的電壓之問題,亦可縮短運算放大器120調節第一電壓V1的時間,並確保電流鏡射電路110能夠操作在穩定的狀態下以提供穩定的鏡射電流Im1。除此之外,還有助於將放大器AMP的增益維持在預定範圍內。也就是說,第4圖是以第二電壓V2為經調節的鏡射分支電路114上的電壓或鏡射分支電路114上的電壓作為範例說明。 FIG. 4 is a schematic diagram of a bias circuit 400 according to another embodiment of the present invention. bias circuit 400 with Bias circuits 200 and 300 have similar structures and operate according to similar principles. However, the bias circuit 400 may include a startup circuit 440 and a voltage selection circuit 450 . For example, in the startup mode, the bias circuit 400 can not only use the voltage selection circuit 450 to set the second voltage V2 according to the voltage VN2, but also use the startup circuit 440 to preheat the amplifier AMP. In this way, it can not only solve the problem that the first voltage V1 and the second voltage V2 may be the voltage on the reference voltage terminal VSS or the voltage on the reference voltage terminal Vref in the first figure, but also shorten the operation amplifier 120 to adjust the first voltage. A voltage V1, and ensure that the current mirror circuit 110 can operate in a stable state to provide a stable mirror current Im1. In addition, it also helps to maintain the gain of the amplifier AMP within a predetermined range. That is to say, FIG. 4 takes the second voltage V2 as the adjusted voltage on the mirroring branch circuit 114 or the voltage on the mirroring branch circuit 114 as an example for illustration.

在有些實施例中,當放大器AMP在運作時,射頻訊號Srf1可能會從輸入端RFIN經由偏壓訊號產生電路130洩漏至鏡射分支電路114,導致電壓VN2的穩定性受到影響,連帶影響第二電壓V2的穩定性。然而,在偏壓電路100至400中,偏壓訊號產生電路130中的電阻R2A及電容C1A可作為低通濾波器,用以濾除不期望的射頻訊號Srf1,以降低射頻訊號Srf1對電壓VN2之干擾,從而維持第二電壓V2的穩定性。此外,偏壓電路100至400還可包含電阻R3A及電容C2A。電阻R3A具有第一端及第二端。電阻R3A的第一端可耦接至運算放大器120的第二輸入端,而電阻R3A的第二端可耦接於節點N2。電容C2A具有第一端及第二端。電容C2A的第一端可耦接於電阻R3A的第一端,而電容C2A的第二端可耦接於基準電壓端VSS。電阻R3A及電容C2A亦可作為低通濾波器,用以濾除不期望的射頻訊號Srf1,以降低射頻訊號Srf1對第二電壓V2之干擾。在有些實施例中,為提升第二電壓V2的穩定性,還可以在電流鏡射電路110中增設另一鏡射分支電路。 In some embodiments, when the amplifier AMP is in operation, the radio frequency signal Srf1 may leak from the input terminal RFIN to the mirror branch circuit 114 through the bias signal generating circuit 130, causing the stability of the voltage VN2 to be affected, thereby affecting the second Stability of voltage V2. However, in the bias circuits 100 to 400, the resistor R2A and the capacitor C1A in the bias signal generating circuit 130 can be used as a low-pass filter to filter out the undesired radio frequency signal Srf1, so as to reduce the radio frequency signal Srf1 to the voltage The disturbance of VN2 maintains the stability of the second voltage V2. In addition, the bias circuits 100 to 400 may further include a resistor R3A and a capacitor C2A. The resistor R3A has a first terminal and a second terminal. The first terminal of the resistor R3A can be coupled to the second input terminal of the operational amplifier 120 , and the second terminal of the resistor R3A can be coupled to the node N2 . The capacitor C2A has a first terminal and a second terminal. The first terminal of the capacitor C2A can be coupled to the first terminal of the resistor R3A, and the second terminal of the capacitor C2A can be coupled to the reference voltage terminal VSS. The resistor R3A and the capacitor C2A can also be used as a low-pass filter to filter out the undesired radio frequency signal Srf1, so as to reduce the interference of the radio frequency signal Srf1 to the second voltage V2. In some embodiments, in order to improve the stability of the second voltage V2 , another mirror branch circuit can be added in the current mirror circuit 110 .

第5圖是本發明另一實施例之偏壓電路500的示意圖。偏壓電路500與400具有相似的結構,並可根據相似的原理操作。然而,偏壓電路500的電流鏡 射電路510可包含參考分支電路512、鏡射分支電路514及鏡射分支電路516。鏡射分支電路514可以根據參考電流Iref產生鏡射電流Im1,而鏡射分支電路516可以根據參考電流Iref產生鏡射電流Im2。在此情況下,偏壓訊號產生電路530則可以根據鏡射電流Im1產生偏壓訊號Sbias。 FIG. 5 is a schematic diagram of a bias circuit 500 according to another embodiment of the present invention. Bias circuits 500 and 400 have similar structures and operate according to similar principles. However, the current mirror of bias circuit 500 The mirror circuit 510 may include a reference branch circuit 512 , a mirror branch circuit 514 and a mirror branch circuit 516 . The mirroring branch circuit 514 can generate the mirroring current Im1 according to the reference current Iref, and the mirroring branch circuit 516 can generate the mirroring current Im2 according to the reference current Iref. In this case, the bias signal generating circuit 530 can generate the bias signal Sbias according to the mirror current Im1.

在第5圖中,電流鏡射電路510還可包含電流源CSB及電晶體T3B,而參考分支電路512可包含節點N1、電晶體T1B及T4B。電流源CSB可耦接於操作電壓端VDD1用以產生基準電流IB。電晶體T3B具有第一端、第二端及控制端。電晶體T3B的第一端可耦接於電流源CSB用以接收基準電流IB,電晶體T3B的第二端可耦接於基準電壓端VSS,而電晶體T3B的控制端可耦接於電晶體T3B的第一端。節點N1可設置於電晶體T1B及T4B之間。電晶體T1B具有第一端、第二端及控制端。電晶體T1B的第一端可耦接參考電壓端Vref,電晶體T1B的第二端可耦接於節點N1。電晶體T4B具有第一端、第二端及控制端。電晶體T4B的第一端可耦接於節點N1,電晶體T4B的第二端可耦接於基準電壓端VSS,而電晶體T4B的控制端可耦接於電晶體T3B的控制端。也就是說,電晶體T3B及T4B可以形成電流鏡的結構,用於鏡射基準電流IB以產生參考電流Iref。 In FIG. 5, the current mirror circuit 510 may further include a current source CSB and a transistor T3B, and the reference branch circuit 512 may include a node N1, transistors T1B and T4B. The current source CSB can be coupled to the operating voltage terminal VDD1 for generating the reference current IB. The transistor T3B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T3B can be coupled to the current source CSB to receive the reference current IB, the second terminal of the transistor T3B can be coupled to the reference voltage terminal VSS, and the control terminal of the transistor T3B can be coupled to the transistor The first end of T3B. The node N1 can be disposed between the transistors T1B and T4B. The transistor T1B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T1B can be coupled to the reference voltage terminal Vref, and the second terminal of the transistor T1B can be coupled to the node N1. The transistor T4B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T4B can be coupled to the node N1, the second terminal of the transistor T4B can be coupled to the reference voltage terminal VSS, and the control terminal of the transistor T4B can be coupled to the control terminal of the transistor T3B. That is to say, the transistors T3B and T4B can form a current mirror structure for mirroring the reference current IB to generate the reference current Iref.

鏡射分支電路516可包含節點N2、電晶體T2B及穩壓電路560。節點N2可設置於電晶體T2B及穩壓電路560之間。電晶體T2B具有第一端、第二端及控制端。電晶體T2B的第一端可耦接至參考電壓端Vref,電晶體T2B的第二端可耦接至節點N2,而電晶體T2B的控制端可耦接至電晶體T1B的控制端。穩壓電路560具有第一端及第二端。穩壓電路560的第一端可耦接於節點N2,而穩壓電路560的第二端可耦接於基準電壓端VSS。穩壓電路560可包含電阻R4B、二極體D3B及二極體D4B。電阻R4B具有第一端及第二端。電阻R4B的第一端可耦接於穩壓電路560的第一端。二極體D3B具有第一端及第二端。二極體D3B的第一端可耦接於電阻R4B的第二端。二極體D4B具有第一端及第二端。二極體D4B的第 一端可耦接於二極體D3B的第二端,而二極體D4B的第二端可耦接於穩壓電路560的第二端。 The mirror branch circuit 516 may include a node N2 , a transistor T2B and a voltage stabilizing circuit 560 . The node N2 can be disposed between the transistor T2B and the voltage stabilizing circuit 560 . The transistor T2B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T2B can be coupled to the reference voltage terminal Vref, the second terminal of the transistor T2B can be coupled to the node N2, and the control terminal of the transistor T2B can be coupled to the control terminal of the transistor T1B. The voltage stabilizing circuit 560 has a first terminal and a second terminal. The first terminal of the voltage stabilizing circuit 560 can be coupled to the node N2, and the second terminal of the voltage stabilizing circuit 560 can be coupled to the reference voltage terminal VSS. The voltage stabilizing circuit 560 may include a resistor R4B, a diode D3B, and a diode D4B. The resistor R4B has a first terminal and a second terminal. The first end of the resistor R4B can be coupled to the first end of the voltage stabilizing circuit 560 . The diode D3B has a first end and a second end. The first end of the diode D3B can be coupled to the second end of the resistor R4B. The diode D4B has a first end and a second end. Diode D4B's first One terminal can be coupled to the second terminal of the diode D3B, and the second terminal of the diode D4B can be coupled to the second terminal of the voltage stabilizing circuit 560 .

運算放大器520可具有第一輸入端、第二輸入端及輸出端。運算放大器520的第一輸入端可耦接於節點N1,運算放大器520的第二輸入端可耦接於節點N2,而運算放大器520的輸出端可耦接電晶體T1B的控制端及電晶體T2B的控制端。 The operational amplifier 520 may have a first input terminal, a second input terminal and an output terminal. The first input terminal of the operational amplifier 520 can be coupled to the node N1, the second input terminal of the operational amplifier 520 can be coupled to the node N2, and the output terminal of the operational amplifier 520 can be coupled to the control terminal of the transistor T1B and the transistor T2B. the control terminal.

鏡射分支電路514可包含節點N3及電晶體T6B。節點N3可設置於電晶體T6B及偏壓訊號產生電路530之間。電晶體T6B具有第一端、第二端及控制端。電晶體T6B的第一端可耦接於參考電壓端Vref,電晶體T6B的第二端可耦接於節點N3,而電晶體T6B的控制端可耦接電晶體T2B的控制端。如此一來,電晶體T1B的控制端和第一端之間的電壓差、電晶體T2B的控制端和第一端之間的電壓差以及電晶體T6B的控制端和第一端之間的電壓差皆可為實質上相等,且電晶體T1B、T2B及T6B可形成電流鏡的結構,用於鏡射參考電流Iref以分別產生鏡射電流Im2及Im1。 The mirror branch circuit 514 may include a node N3 and a transistor T6B. The node N3 can be disposed between the transistor T6B and the bias signal generating circuit 530 . The transistor T6B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T6B can be coupled to the reference voltage terminal Vref, the second terminal of the transistor T6B can be coupled to the node N3, and the control terminal of the transistor T6B can be coupled to the control terminal of the transistor T2B. In this way, the voltage difference between the control terminal and the first terminal of transistor T1B, the voltage difference between the control terminal and the first terminal of transistor T2B, and the voltage between the control terminal and the first terminal of transistor T6B The differences can be substantially equal, and the transistors T1B, T2B and T6B can form a current mirror structure for mirroring the reference current Iref to generate mirror currents Im2 and Im1 respectively.

此外,偏壓訊號產生電路530可包含穩壓電路532、電晶體T5B、電阻R1B及電容C1B。穩壓電路532可具有第一端及第二端。穩壓電路532的第一端可耦接於節點N3,而穩壓電路532的第二端可耦接於基準電壓端VSS。在第5圖中,穩壓電路532及穩壓電路560可具有相似的結構。舉例來說,穩壓電路532可包含電阻R2B、二極體D1B及二極體D2B。電阻R2B具有第一端及第二端。電阻R2B的第一端可耦接於穩壓電路532的第一端。二極體D1B具有第一端及第二端。二極體D1B的第一端可耦接於電阻R2B的第二端。二極體D2B具有第一端及第二端。二極體D2B的第一端可耦接於二極體D1B的第二端,而二極體D2B的第二端可耦接於穩壓電路532的第二端。電晶體T5B具有第一端、第二端及控制端。電晶體T5B的第一端可耦接於操作電壓端VDD2,電晶體T5B的控制端可耦接於電 阻R2B的第二端。電阻R1B具有第一端及第二端。電阻R1B的第一端可耦接於電晶體T5B的第二端,而電阻R1B的第二端可耦接於放大器AMP的偏壓端NB並可用於輸出偏壓訊號Sbias。電容C1B具有第一端及第二端。電容C1B的第一端可耦接於電晶體T5B的控制端,而電容C1B的第二端可耦接至基準電壓端VSS。在有些實施例中,當鏡射電流Im1流經穩壓電路532時,電阻R2B會產生壓降,並可將二極體D1B及D2B導通。在此情況下,節點N3上的電壓VN3可視為電阻R2B的壓降與二極體D1B及D2B的導通電壓的和。 In addition, the bias signal generating circuit 530 may include a voltage stabilizing circuit 532 , a transistor T5B, a resistor R1B and a capacitor C1B. The voltage stabilizing circuit 532 may have a first terminal and a second terminal. The first terminal of the voltage stabilizing circuit 532 can be coupled to the node N3, and the second terminal of the voltage stabilizing circuit 532 can be coupled to the reference voltage terminal VSS. In FIG. 5 , the voltage stabilizing circuit 532 and the voltage stabilizing circuit 560 may have similar structures. For example, the voltage stabilizing circuit 532 may include a resistor R2B, a diode D1B, and a diode D2B. The resistor R2B has a first terminal and a second terminal. The first end of the resistor R2B can be coupled to the first end of the voltage stabilizing circuit 532 . The diode D1B has a first end and a second end. The first end of the diode D1B can be coupled to the second end of the resistor R2B. The diode D2B has a first end and a second end. The first terminal of the diode D2B can be coupled to the second terminal of the diode D1B, and the second terminal of the diode D2B can be coupled to the second terminal of the voltage stabilizing circuit 532 . The transistor T5B has a first terminal, a second terminal and a control terminal. The first terminal of the transistor T5B can be coupled to the operating voltage terminal VDD2, and the control terminal of the transistor T5B can be coupled to the voltage terminal VDD2. Block the second terminal of R2B. The resistor R1B has a first terminal and a second terminal. The first terminal of the resistor R1B can be coupled to the second terminal of the transistor T5B, and the second terminal of the resistor R1B can be coupled to the bias terminal NB of the amplifier AMP and can be used to output the bias signal Sbias. The capacitor C1B has a first terminal and a second terminal. The first terminal of the capacitor C1B can be coupled to the control terminal of the transistor T5B, and the second terminal of the capacitor C1B can be coupled to the reference voltage terminal VSS. In some embodiments, when the mirror current Im1 flows through the voltage stabilizing circuit 532 , the resistor R2B will generate a voltage drop and turn on the diodes D1B and D2B. In this case, the voltage VN3 on the node N3 can be regarded as the sum of the voltage drop of the resistor R2B and the conduction voltages of the diodes D1B and D2B.

在有些實施例中,為使參考電流Iref能被精準地鏡射以分別產生穩定的鏡射電流Im2及Im1,不僅需將電晶體T1B的控制端和第一端之間的電壓差、電晶體T2B的控制端和第一端之間的電壓差以及電晶體T6B的控制端和第一端之間的電壓差設計為實質上相等,且電晶體T1B的第二端和第一端之間的電壓差、電晶體T2B的第二端和第一端之間的電壓差以及電晶體T6B的第二端和第一端之間的電壓差亦需設計為實質上相等。進一步而言,當鏡射電流Im2流經穩壓電路560時,電阻R4B會產生壓降,並可將二極體D3B及D4B導通。在此情況下,節點N2上的電壓VN2可視為電阻R4B的壓降與二極體D3B及D4B的導通電壓的和。電晶體T1B與運算放大器520可形成負回授迴路,因此運算放大器520的第一輸入端與第二輸入端可具有虛短路特性。當第5圖是以第一電壓V1為節點N1上的電壓VN1(即參考分支電路512上的電壓),而第二電壓V2為電壓VN2(即鏡射分支電路516上的電壓)作為範例時,運算放大器520產生的控制電壓Vctrl可用以使第一電壓V1跟隨第二電壓V2的變化,以當偏壓電路500操作於操作模式時,第一電壓V1及第二電壓V2可為實質上相等。在有些實施例中,電晶體T6B與電晶體T2B可具有相同的電氣特性,且穩壓電路532也可與穩壓電路560具有相同的電氣特性,因此電壓VN3與VN2可為實質上相等。如此一來,電晶體T1B的第二端和第一端之間的電壓差、電晶體T2B的第二端和第一端之間的電壓差與電晶體 T6B的第二端和第一端之間的電壓差便可皆為實質上相等,使得參考電流Iref能夠被精準地鏡射以分別產生穩定的鏡射電流Im2及Im1,進而使偏壓訊號產生電路530可以據以輸出穩定的偏壓訊號Sbias。 In some embodiments, in order to accurately mirror the reference current Iref to generate stable mirrored currents Im2 and Im1 respectively, not only the voltage difference between the control terminal and the first terminal of the transistor T1B, the transistor The voltage difference between the control terminal and the first terminal of T2B and the voltage difference between the control terminal and the first terminal of the transistor T6B are designed to be substantially equal, and the voltage difference between the second terminal and the first terminal of the transistor T1B The voltage difference, the voltage difference between the second terminal and the first terminal of the transistor T2B, and the voltage difference between the second terminal and the first terminal of the transistor T6B also need to be designed to be substantially equal. Furthermore, when the mirror current Im2 flows through the voltage stabilizing circuit 560 , the resistor R4B will generate a voltage drop, which can turn on the diodes D3B and D4B. In this case, the voltage VN2 on the node N2 can be regarded as the sum of the voltage drop of the resistor R4B and the conduction voltages of the diodes D3B and D4B. The transistor T1B and the operational amplifier 520 can form a negative feedback loop, so the first input terminal and the second input terminal of the operational amplifier 520 can have a virtual short circuit characteristic. When FIG. 5 takes the first voltage V1 as the voltage VN1 on the node N1 (that is, the voltage on the reference branch circuit 512), and the second voltage V2 is the voltage VN2 (that is, the voltage on the mirror branch circuit 516) as an example , the control voltage Vctrl generated by the operational amplifier 520 can be used to make the first voltage V1 follow the change of the second voltage V2, so that when the bias circuit 500 operates in the operation mode, the first voltage V1 and the second voltage V2 can be substantially equal. In some embodiments, the transistor T6B and the transistor T2B may have the same electrical characteristics, and the voltage stabilizing circuit 532 may also have the same electrical characteristics as the voltage stabilizing circuit 560 , so the voltages VN3 and VN2 may be substantially equal. In this way, the voltage difference between the second terminal and the first terminal of the transistor T1B, the voltage difference between the second terminal and the first terminal of the transistor T2B and the transistor The voltage difference between the second terminal and the first terminal of T6B can be substantially equal, so that the reference current Iref can be accurately mirrored to generate stable mirror currents Im2 and Im1 respectively, and then the bias signal can be generated. Accordingly, the circuit 530 can output a stable bias signal Sbias.

由於偏壓訊號產生電路530是與鏡射分支電路514耦接,且第二電壓V2是相關於鏡射分支電路516上的電壓,因此從輸入端RFIN經由偏壓訊號產生電路530洩漏的射頻訊號Srf1比較不會影響到第二電壓V2的穩定性。 Since the bias signal generating circuit 530 is coupled to the mirroring branch circuit 514, and the second voltage V2 is related to the voltage on the mirroring branch circuit 516, the RF signal leaked from the input terminal RFIN through the bias signal generating circuit 530 Srf1 will relatively not affect the stability of the second voltage V2.

在有些實施例中,偏壓電路500還可包含電容C3B及電容C4B。電容C3B具有第一端及第二端。電容C3B的第一端可耦接於節點N3,而電容C3B的第二端可耦接於基準電壓端VSS。在第5圖中,不僅可將偏壓訊號產生電路530中的電阻R2B及電容C1B作為低通濾波器,電阻R2B亦可與電容C3B作為另一低通濾波器,用以濾除不期望的射頻訊號Srf1,降低射頻訊號Srf1對電壓VN3之干擾,從而維持電壓VN3的穩定性。電容C4B具有第一端及第二端。電容C4B的第一端可耦接於節點N2,而電容C4B的第二端可耦接於基準電壓端VSS。穩壓電路560中的電阻R4B可與電容C4B作為低通濾波器,用以濾除不期望的射頻訊號Srf1,降低射頻訊號Srf1對電壓VN2之干擾,從而維持第二電壓V2的穩定性。再者,偏壓電路500還可包含啟動電路540、電壓選擇電路550、電阻R3B及電容C2B,其電路連接關係與操作原理可相似於前述,故不再贅述。在有些實施例中,可根據不同的應用或根據系統的需求而選擇性地設置啟動電路540及/或電壓選擇電路550。當偏壓電路500包含啟動電路540及/或電壓選擇電路550時,第二電壓V2可為經調節的鏡射分支電路516上的電壓或鏡射分支電路516上的電壓。 In some embodiments, the bias circuit 500 may further include a capacitor C3B and a capacitor C4B. The capacitor C3B has a first terminal and a second terminal. A first terminal of the capacitor C3B can be coupled to the node N3, and a second terminal of the capacitor C3B can be coupled to the reference voltage terminal VSS. In Fig. 5, not only the resistor R2B and the capacitor C1B in the bias signal generating circuit 530 can be used as a low-pass filter, but the resistor R2B and the capacitor C3B can also be used as another low-pass filter to filter out unwanted The radio frequency signal Srf1 reduces the interference of the radio frequency signal Srf1 to the voltage VN3, thereby maintaining the stability of the voltage VN3. The capacitor C4B has a first terminal and a second terminal. A first terminal of the capacitor C4B can be coupled to the node N2, and a second terminal of the capacitor C4B can be coupled to the reference voltage terminal VSS. The resistor R4B and the capacitor C4B in the voltage stabilizing circuit 560 can be used as a low-pass filter to filter out the undesired radio frequency signal Srf1 and reduce the interference of the radio frequency signal Srf1 to the voltage VN2, thereby maintaining the stability of the second voltage V2. Furthermore, the bias circuit 500 may further include a start-up circuit 540 , a voltage selection circuit 550 , a resistor R3B, and a capacitor C2B. The circuit connections and operating principles thereof are similar to those described above, so details are not repeated here. In some embodiments, the start-up circuit 540 and/or the voltage selection circuit 550 can be selectively configured according to different applications or according to system requirements. When the bias circuit 500 includes the start-up circuit 540 and/or the voltage selection circuit 550 , the second voltage V2 can be the adjusted voltage on the mirrored sub-circuit 516 or the voltage on the mirrored sub-circuit 516 .

在有些實施例中,電晶體T3A、T4A、T3B及T4B可為N型金氧半導體電晶體(NMOS),據此,電晶體T3A、T4A、T3B及T4B的第一端可為汲極,第二端可為源極,且控制端可為閘極。電晶體T1A、T2A、T1B及T2B可為P型金氧半導體電晶體(PMOS),據此,電晶體T1A、T2A、T1B及T2B的第一端可為源極, 第二端可為汲極,且控制端可為閘極。而電晶體T5A及T5B可為雙極性接面型電晶體(BJT),據此,電晶體T5A及T5B的第一端可為集極,第二端可為射極,且控制端可為基極。 In some embodiments, the transistors T3A, T4A, T3B, and T4B can be N-type metal oxide semiconductor transistors (NMOS). Accordingly, the first ends of the transistors T3A, T4A, T3B, and T4B can be drains, and the first terminals of the transistors T3A, T4A, T3B, and T4B can be drains. The two terminals can be sources, and the control terminal can be gates. Transistors T1A, T2A, T1B and T2B can be P-type metal oxide semiconductor transistors (PMOS), accordingly, the first ends of transistors T1A, T2A, T1B and T2B can be source electrodes, The second end can be a drain, and the control end can be a gate. The transistors T5A and T5B can be bipolar junction transistors (BJT), and accordingly, the first ends of the transistors T5A and T5B can be collectors, the second ends can be emitters, and the control ends can be bases. pole.

在有些實施例中,由於射頻訊號的強度較弱,因此單靠一級放大器可能無法將射頻訊號放大到具有足夠的強度,在此情況下,就會利用多級的放大器來放大射頻訊號。然而,射頻訊號可能會洩漏至最後一級放大器的偏壓電路,且當多級放大器的偏壓電路都耦接到相同的參考電壓端時,射頻訊號還可能進一步地經由參考電壓端洩漏至其他級放大器,導致每一級放大器的線性度受到影響。 In some embodiments, because the strength of the radio frequency signal is weak, the radio frequency signal may not be amplified to a sufficient strength by a single amplifier. In this case, multi-stage amplifiers are used to amplify the radio frequency signal. However, the RF signal may leak to the bias circuit of the last stage amplifier, and when the bias circuits of multi-stage amplifiers are all coupled to the same reference voltage terminal, the RF signal may further leak to the other stages of amplifiers, causing the linearity of each stage of amplifiers to be affected.

第6圖是本發明一實施例之訊號放大裝置10的示意圖。訊號放大裝置10可包含偏壓電路1001及1002、輸入端RFIN、輸出端RFOUT及放大器AMP1及AMP2。在有些實施例中,偏壓電路1001及1002可例如與偏壓電路100、200、300、400或500具有相同的結構,並根據相同的原理操作。輸入端RFIN可接收射頻訊號Srf1,而輸出端RFOUT可輸出放大後之射頻訊號Srf2。放大器AMP1可接收偏壓電路1001所產生的偏壓訊號Sbias1,而放大器AMP2可接收偏壓電路1002所產生的偏壓訊號Sbias2。在第6圖中,放大器AMP1及AMP2可耦接於訊號放大裝置10的輸入端RFIN與輸出端RFOUT之間。進一步而言,放大器AMP2可耦接於訊號放大裝置10的輸入端RFIN與放大器AMP1之間。也就是說,訊號放大裝置10可包含兩級的放大器:放大器AMP1及AMP2,並可利用兩者相繼地放大射頻訊號Srf1。 FIG. 6 is a schematic diagram of a signal amplifying device 10 according to an embodiment of the present invention. The signal amplifying device 10 may include bias circuits 1001 and 1002 , an input terminal RFIN, an output terminal RFOUT, and amplifiers AMP1 and AMP2 . In some embodiments, the bias circuits 1001 and 1002 may have the same structure as the bias circuits 100 , 200 , 300 , 400 or 500 and operate according to the same principle. The input terminal RFIN can receive the radio frequency signal Srf1, and the output terminal RFOUT can output the amplified radio frequency signal Srf2. The amplifier AMP1 can receive the bias signal Sbias1 generated by the bias circuit 1001 , and the amplifier AMP2 can receive the bias signal Sbias2 generated by the bias circuit 1002 . In FIG. 6 , the amplifiers AMP1 and AMP2 can be coupled between the input terminal RFIN and the output terminal RFOUT of the signal amplifying device 10 . Further, the amplifier AMP2 can be coupled between the input terminal RFIN of the signal amplifying device 10 and the amplifier AMP1 . That is to say, the signal amplifying device 10 may include two stages of amplifiers: the amplifiers AMP1 and AMP2, and the radio frequency signal Srf1 may be sequentially amplified by the two amplifiers.

此外,偏壓電路1001可耦接於參考電壓端Vref1與放大器AMP1的偏壓端NB1之間,用以接收參考電壓VR1。偏壓電路1002則可耦接於參考電壓端Vref2與放大器AMP2的偏壓端NB2之間,用以接收參考電壓VR2。訊號放大裝置10還可包含低壓降穩壓器(Low Dropout Regulator,LDO)671及低壓降穩壓器 672。低壓降穩壓器671可用以根據供應電壓端VSP上的供應電壓產生參考電壓VR1至參考電壓端Vref1,而低壓降穩壓器672可用以根據供應電壓端VSP上的供應電壓產生參考電壓VR2至參考電壓端Vref2。在有些實施例中,為了維持放大器AMP1及AMP2的線性度,可透過設置電容C0以將不期望的射頻訊號Srf1濾除。進一步而言,供應電壓端VSP可另耦接至訊號放大裝置10的對外接腳P1,並可將電容C0耦接至對外接腳P1,即電容C0是設置在訊號放大裝置10的外部。如此一來,便可以選用電容值較大的電容C0以有效地濾除不期望的射頻訊號Srf1,而不會增加訊號放大裝置10的面積,使得訊號放大裝置10在設計上更有彈性。 In addition, the bias circuit 1001 can be coupled between the reference voltage terminal Vref1 and the bias terminal NB1 of the amplifier AMP1 for receiving the reference voltage VR1. The bias circuit 1002 can be coupled between the reference voltage terminal Vref2 and the bias terminal NB2 of the amplifier AMP2 for receiving the reference voltage VR2. The signal amplifying device 10 may also include a low dropout regulator (Low Dropout Regulator, LDO) 671 and a low dropout regulator 672. The low-dropout voltage regulator 671 can be used to generate the reference voltage VR1 to the reference voltage terminal Vref1 according to the supply voltage on the supply voltage terminal VSP, and the low-dropout voltage regulator 672 can be used to generate the reference voltage VR2 to the reference voltage terminal according to the supply voltage on the supply voltage terminal VSP. Reference voltage terminal Vref2. In some embodiments, in order to maintain the linearity of the amplifiers AMP1 and AMP2, the unwanted radio frequency signal Srf1 can be filtered out by setting the capacitor C0. Furthermore, the supply voltage terminal VSP can be further coupled to the external pin P1 of the signal amplifying device 10 , and the capacitor C0 can be coupled to the external pin P1 , that is, the capacitor C0 is disposed outside the signal amplifying device 10 . In this way, the capacitor C0 with larger capacitance can be selected to effectively filter the unwanted radio frequency signal Srf1 without increasing the area of the signal amplifying device 10 , making the design of the signal amplifying device 10 more flexible.

在有些實施例中,訊號放大裝置10還可包含放大器AMP3、偏壓電路1003及低壓降穩壓器673。也就是說,訊號放大裝置10可包含更多的放大器,例如三級的放大器:放大器AMP1至AMP3,並可相繼地放大射頻訊號Srf1。放大器AMP3可設置在訊號放大裝置10的輸入端RFIN及放大器AMP2之間,並可接收偏壓電路1003所產生的偏壓訊號Sbias3。偏壓電路1003可耦接於參考電壓端Vref3與放大器AMP3的偏壓端NB3之間,用以接收參考電壓VR3。低壓降穩壓器673則用以根據供應電壓端VSP上的供應電壓產生參考電壓VR3至參考電壓端Vref3。然而,本發明並不限定訊號放大裝置10中所包含的低壓降穩壓器數量,在有些實施例中,根據系統的需求,訊號放大裝置10可能包含更少數量的低壓降穩壓器,而將低壓降穩壓器672或673省略。 In some embodiments, the signal amplifying device 10 may further include an amplifier AMP3 , a bias circuit 1003 and a low dropout regulator 673 . That is to say, the signal amplifying device 10 can include more amplifiers, such as three stages of amplifiers: amplifiers AMP1 to AMP3, and can amplify the radio frequency signal Srf1 successively. The amplifier AMP3 can be disposed between the input terminal RFIN of the signal amplifying device 10 and the amplifier AMP2 , and can receive the bias signal Sbias3 generated by the bias circuit 1003 . The bias circuit 1003 can be coupled between the reference voltage terminal Vref3 and the bias terminal NB3 of the amplifier AMP3 for receiving the reference voltage VR3. The low dropout regulator 673 is used to generate the reference voltage VR3 to the reference voltage terminal Vref3 according to the supply voltage on the supply voltage terminal VSP. However, the present invention does not limit the number of LDOs included in the signal amplifying device 10. In some embodiments, the signal amplifying device 10 may include fewer LDOs according to system requirements, and The low dropout regulator 672 or 673 is omitted.

第7圖是本發明另一實施例之訊號放大裝置20的示意圖。訊號放大裝置20可包含偏壓電路2001、2002及2003、輸入端RFIN、輸出端RFOUT、放大器AMP1至AMP3及低壓降穩壓器771及772。訊號放大裝置20與10具有相似的結構及操作原理,其主要的差別在於訊號放大裝置20中的偏壓電路2003及低壓降穩壓器771及772。 FIG. 7 is a schematic diagram of a signal amplifying device 20 according to another embodiment of the present invention. The signal amplifying device 20 may include bias circuits 2001 , 2002 and 2003 , an input terminal RFIN, an output terminal RFOUT, amplifiers AMP1 to AMP3 , and low dropout regulators 771 and 772 . The signal amplifying devices 20 and 10 have similar structures and operating principles, and the main difference lies in the bias circuit 2003 and the low-dropout regulators 771 and 772 in the signal amplifying device 20 .

在第7圖中,偏壓電路2001可耦接於參考電壓端Vref1與放大器AMP1 的偏壓端NB1之間,用以接收參考電壓VR1。偏壓電路2002可耦接於參考電壓端Vref2與放大器AMP2的偏壓端NB2之間,用以接收參考電壓VR2。偏壓電路2003則可耦接於參考電壓端Vref2與放大器AMP3的偏壓端NB3之間,用以接收參考電壓VR2。低壓降穩壓器771可用以根據供應電壓端VSP上的供應電壓產生參考電壓VR1至參考電壓端Vref1,而低壓降穩壓器772可用以根據供應電壓端VSP上的供應電壓產生參考電壓VR2至參考電壓端Vref2。也就是說,偏壓電路2003可以和偏壓電路2002使用相同的低壓降穩壓器。 In Figure 7, the bias circuit 2001 can be coupled to the reference voltage terminal Vref1 and the amplifier AMP1 Between the bias terminals NB1 for receiving the reference voltage VR1. The bias circuit 2002 can be coupled between the reference voltage terminal Vref2 and the bias terminal NB2 of the amplifier AMP2 for receiving the reference voltage VR2. The bias circuit 2003 can be coupled between the reference voltage terminal Vref2 and the bias terminal NB3 of the amplifier AMP3 for receiving the reference voltage VR2. The low-dropout voltage regulator 771 can be used to generate the reference voltage VR1 to the reference voltage terminal Vref1 according to the supply voltage on the supply voltage terminal VSP, and the low-dropout voltage regulator 772 can be used to generate the reference voltage VR2 to the reference voltage terminal according to the supply voltage on the supply voltage terminal VSP. Reference voltage terminal Vref2. That is to say, the bias circuit 2003 and the bias circuit 2002 can use the same low-dropout voltage regulator.

在有些實施例中,為了維持放大器AMP1至AMP3的線性度,可透過設置電容C0以將不期望的射頻訊號Srf1濾除。進一步而言,供應電壓端VSP可另耦接至訊號放大裝置20的對外接腳P1,並可將電容C0耦接至對外接腳P1,即電容C0是設置在訊號放大裝置20的外部。如此一來,便可以選用電容值較大的電容C0以有效地濾除不期望的射頻訊號Srf1,而不會增加訊號放大裝置20的面積,使得訊號放大裝置20在設計上更有彈性。 In some embodiments, in order to maintain the linearity of the amplifiers AMP1 to AMP3, the unwanted radio frequency signal Srf1 can be filtered out by setting the capacitor C0. Furthermore, the supply voltage terminal VSP can be further coupled to the external pin P1 of the signal amplifying device 20 , and the capacitor C0 can be coupled to the external pin P1 , that is, the capacitor C0 is disposed outside the signal amplifying device 20 . In this way, the capacitor C0 with larger capacitance can be selected to effectively filter the unwanted radio frequency signal Srf1 without increasing the area of the signal amplifying device 20 , making the design of the signal amplifying device 20 more flexible.

綜上所述,本發明之實施例所提供的偏壓電路及訊號放大裝置可經設計而使內部電流鏡射電路中不同分支電路的電晶體能滿足所需的操作電壓條件,從而提供穩定的鏡射電流,使得偏壓訊號產生電路能夠產生穩定的偏壓訊號,進而維持放大器的性能表現。此外,當訊號放大裝置包含多級的放大器時,還可以透過設置外部電容,來減少不期望的射頻訊號對各級放大器所造成之影響。 In summary, the bias circuit and signal amplifying device provided by the embodiments of the present invention can be designed so that the transistors of different branch circuits in the internal current mirror circuit can meet the required operating voltage conditions, thereby providing stable The mirror current enables the bias signal generating circuit to generate a stable bias signal, thereby maintaining the performance of the amplifier. In addition, when the signal amplifying device includes multi-stage amplifiers, the influence of undesired radio frequency signals on the amplifiers of each stage can also be reduced by setting external capacitors.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.

100:偏壓電路 100: bias circuit

110:電流鏡射電路 110: current mirror circuit

112:參考分支電路 112: Reference branch circuit

114:鏡射分支電路 114: mirror branch circuit

120:運算放大器 120: Operational amplifier

130:偏壓訊號產生電路 130: Bias signal generating circuit

132:穩壓電路 132: Regulator circuit

AMP:放大器 AMP: Amplifier

C1A、C2A:電容 C1A, C2A: capacitance

CSA:電流源 CSA: current source

D1A、D2A:二極體 D1A, D2A: Diode

IB:基準電流 IB: Reference current

Im1:鏡射電流 Im1: mirror current

Iref:參考電流 Iref: reference current

N1、N2:節點 N1, N2: nodes

NB:偏壓端 NB: Bias terminal

R1A至R3A:電阻 R1A to R3A: Resistors

RFIN:輸入端 RFIN: input terminal

RFOUT:輸出端 RFOUT: output terminal

Sbias:偏壓訊號 Sbias: bias signal

Srf1、Srf2:射頻訊號 Srf1, Srf2: RF signal

T1A至T5A:電晶體 T1A to T5A: Transistors

V1:第一電壓 V1: first voltage

V2:第二電壓 V2: second voltage

Vctrl:控制電壓 Vctrl: control voltage

VDD1、VDD2:操作電壓端 VDD1, VDD2: operating voltage terminal

VN1、VN2:電壓 VN1, VN2: Voltage

Vref:參考電壓端 Vref: reference voltage terminal

VSS:基準電壓端 VSS: reference voltage terminal

Claims (21)

一種偏壓電路,包含:一電流鏡射電路,包含一參考分支電路用以根據一基準電流鏡射產生一參考電流,以及至少一鏡射分支電路用以根據該參考電流產生至少一鏡射電流;一運算放大器,耦接該參考分支電路及該至少一鏡射分支電路,用以接收一第一電壓及一第二電壓,並用以根據該第二電壓產生一控制電壓,該控制電壓是用以調節該第一電壓;以及一偏壓訊號產生電路,耦接該至少一鏡射分支電路,用以根據該至少一鏡射電流產生一偏壓訊號;其中該第一電壓為該參考分支電路上的一電壓,該第二電壓為該至少一鏡射分支電路上的一電壓或經調節的該至少一鏡射分支電路上的該電壓。 A bias circuit, comprising: a current mirror circuit, including a reference branch circuit for generating a reference current according to a reference current mirror, and at least one mirror branch circuit for generating at least one mirror image according to the reference current Current; an operational amplifier, coupled to the reference branch circuit and the at least one mirror branch circuit, for receiving a first voltage and a second voltage, and for generating a control voltage according to the second voltage, the control voltage is used to adjust the first voltage; and a bias signal generating circuit, coupled to the at least one mirror branch circuit, for generating a bias signal according to the at least one mirror current; wherein the first voltage is the reference branch A voltage on the circuit, the second voltage being a voltage on the at least one mirrored sub-circuit or the regulated voltage on the at least one mirrored sub-circuit. 如請求項1所述之偏壓電路,其中:該至少一鏡射分支電路包含一第一鏡射分支電路,該第一鏡射分支電路用以產生該至少一鏡射電流中的一第一鏡射電流;該偏壓訊號產生電路用以根據該第一鏡射電流產生該偏壓訊號;該參考分支電路包含:一第一電晶體,具有一第一端耦接一第一參考電壓端,一第二端耦接一第一節點,以及一控制端;以及該第一鏡射分支電路包含:一第二電晶體,具有一第一端耦接該第一參考電壓端,一第二端耦接一第二節點,以及一控制端耦接該第一電晶體的該控制端。 The bias circuit as claimed in claim 1, wherein: the at least one mirroring branch circuit includes a first mirroring branch circuit, and the first mirroring branch circuit is used to generate a first mirroring current in the at least one mirroring current A mirror current; the bias signal generating circuit is used to generate the bias signal according to the first mirror current; the reference branch circuit includes: a first transistor having a first terminal coupled to a first reference voltage Terminal, a second terminal coupled to a first node, and a control terminal; and the first mirror branch circuit includes: a second transistor, with a first terminal coupled to the first reference voltage terminal, a first Two terminals are coupled to a second node, and a control terminal is coupled to the control terminal of the first transistor. 如請求項2所述之偏壓電路,其中:該偏壓訊號產生電路包含一第一穩壓電路,具有一第一端耦接於該第二節點,及一第二端耦接於一基準電壓端,該第一穩壓電路還包含:一第一電阻,具有一第一端耦接於該第一穩壓電路之該第一端,及一第二端;一第一二極體,具有一第一端耦接於該第一電阻的該第二端,及一第二端;及一第二二極體,具有一第一端耦接於該第一二極體之該第二端,及一第二端耦接於該第一穩壓電路之該第二端。 The bias circuit as described in claim 2, wherein: the bias signal generating circuit includes a first voltage stabilizing circuit, has a first terminal coupled to the second node, and a second terminal coupled to a The reference voltage terminal, the first voltage stabilizing circuit also includes: a first resistor having a first end coupled to the first end of the first voltage stabilizing circuit, and a second end; a first diode , having a first end coupled to the second end of the first resistor, and a second end; and a second diode, having a first end coupled to the second end of the first diode Two terminals, and a second terminal coupled to the second terminal of the first voltage stabilizing circuit. 如請求項3所述之偏壓電路,其中該第二電壓係為該第一電阻的壓降與該第一二極體及該第二二極體的導通電壓的和。 The bias circuit according to claim 3, wherein the second voltage is the sum of the voltage drop of the first resistor and the conduction voltages of the first diode and the second diode. 如請求項2所述之偏壓電路,其中該運算放大器具有一第一輸入端耦接該第一節點,一第二輸入端耦接該第二節點,以及一輸出端耦接該第一電晶體的該控制端及該第二電晶體的該控制端。 The bias circuit as described in claim 2, wherein the operational amplifier has a first input terminal coupled to the first node, a second input terminal coupled to the second node, and an output terminal coupled to the first the control end of the transistor and the control end of the second transistor. 如請求項5所述之偏壓電路,其中該第一電晶體的該控制端和該第一端之間的一電壓差與該第二電晶體的該控制端和該第一端之間的一電壓差實質上相等,且該第一電晶體的該第二端和該第一端之間的一電壓差與該第二電晶體的該第二端和該第一端之間的一電壓差實質上相等。 The bias circuit as described in claim 5, wherein a voltage difference between the control terminal and the first terminal of the first transistor is the same as that between the control terminal and the first terminal of the second transistor a voltage difference between the second terminal and the first terminal of the first transistor is substantially equal to a voltage difference between the second terminal and the first terminal of the second transistor The voltage differences are substantially equal. 如請求項5所述之偏壓電路,其中當該偏壓電路操作於一操作模 式時,該第一電壓與該第二電壓實質上相等。 The bias circuit as described in claim 5, wherein when the bias circuit operates in an operation mode In the formula, the first voltage is substantially equal to the second voltage. 如請求項5所述之偏壓電路,還包含一第一啟動電路,用以當該偏壓電路操作於一啟動模式時,產生一第一啟動電流以使該第二電壓達到一預設值,且該第一電壓係由一初始值跟隨該第二電壓的該預設值變化。 The bias circuit as described in claim 5, further comprising a first start-up circuit for generating a first start-up current to make the second voltage reach a predetermined value when the bias circuit is operated in a start-up mode set value, and the first voltage changes from an initial value following the preset value of the second voltage. 如請求項5所述之偏壓電路,還包含一電壓選擇電路,用以根據該第二節點上的一電壓設定該第二電壓。 The bias circuit according to claim 5 further includes a voltage selection circuit for setting the second voltage according to a voltage on the second node. 如請求項9所述之偏壓電路,其中當該第二節點上的該電壓大於一上限電壓時,該電壓選擇電路將該第二電壓設定為小於或等於該上限電壓的一第一預設電壓。 The bias circuit as described in claim 9, wherein when the voltage on the second node is greater than an upper limit voltage, the voltage selection circuit sets the second voltage to a first predetermined value less than or equal to the upper limit voltage Set the voltage. 如請求項9所述之偏壓電路,其中當該第二節點上的該電壓小於一下限電壓時,該電壓選擇電路將該第二電壓設定為大於或等於該下限電壓的一第二預設電壓。 The bias circuit as described in Claim 9, wherein when the voltage on the second node is less than a lower limit voltage, the voltage selection circuit sets the second voltage to a second predetermined value greater than or equal to the lower limit voltage Set the voltage. 如請求項9所述之偏壓電路,其中當該第二節點上的該電壓介於一上限電壓及一下限電壓之間時,該電壓選擇電路將該第二電壓設定為與該第二節點上的該電壓相等。 The bias circuit as described in claim 9, wherein when the voltage on the second node is between an upper limit voltage and a lower limit voltage, the voltage selection circuit sets the second voltage to be equal to the second The voltages on the nodes are equal. 如請求項1所述之偏壓電路,其中該至少一鏡射分支電路包含一第一端、一第二端及一控制端,及該偏壓訊號產生電路耦接該至少一鏡射分支電路的該第二端。 The bias voltage circuit as described in claim 1, wherein the at least one mirror branch circuit includes a first terminal, a second terminal and a control terminal, and the bias signal generating circuit is coupled to the at least one mirror branch the second end of the circuit. 一種偏壓電路,包含:一電流鏡射電路,包含一參考分支電路用以根據一基準電流產生一參考電流,以及至少一鏡射分支電路用以根據該參考電流產生至少一鏡射電流,該至少一鏡射分支電路包含一第一鏡射分支電路以及一第二鏡射分支電路,該第一鏡射分支電路用以產生該至少一鏡射電流中的一第一鏡射電流,及該第二鏡射分支電路用以產生該至少一鏡射電流中的一第二鏡射電流;一運算放大器,耦接該參考分支電路及該至少一鏡射分支電路,用以接收一第一電壓及一第二電壓,並用以根據該第二電壓產生一控制電壓,該控制電壓是用以調節該第一電壓;以及一偏壓訊號產生電路,耦接該第一鏡射分支電路,該偏壓訊號產生電路用以根據該第一鏡射電流產生該偏壓訊號;其中該第一電壓為該參考分支電路上的一電壓,該第二電壓為該第二鏡射分支電路上的一電壓或經調節的該第二鏡射分支電路上的該電壓。 A bias circuit, comprising: a current mirror circuit, comprising a reference branch circuit for generating a reference current according to a reference current, and at least one mirror branch circuit for generating at least one mirror current according to the reference current, The at least one mirroring branch circuit includes a first mirroring branch circuit and a second mirroring branch circuit, the first mirroring branch circuit is used to generate a first mirroring current in the at least one mirroring current, and The second mirror branch circuit is used to generate a second mirror current in the at least one mirror current; an operational amplifier, coupled to the reference branch circuit and the at least one mirror branch circuit, is used to receive a first voltage and a second voltage, and is used to generate a control voltage according to the second voltage, and the control voltage is used to adjust the first voltage; and a bias signal generating circuit, coupled to the first mirror branch circuit, the The bias signal generating circuit is used to generate the bias signal according to the first mirror current; wherein the first voltage is a voltage on the reference branch circuit, and the second voltage is a voltage on the second mirror branch circuit voltage or the regulated voltage on the second mirrored branch circuit. 如請求項14所述之偏壓電路,其中:該參考分支電路包含一第三電晶體,具有一第一端耦接一第二參考電壓端,一第二端耦接一第三節點,以及一控制端;該第二鏡射分支電路包含:一第四電晶體,具有一第一端耦接該第二參考電壓端,一第二端耦接一第四節點,以及一控制端耦接該第三電晶體的該控制端;以及一第二穩壓電路,具有一第一端耦接該第四節點,以及一第二端耦接一基準電壓端。 The bias circuit as described in claim 14, wherein: the reference branch circuit includes a third transistor, has a first terminal coupled to a second reference voltage terminal, and a second terminal coupled to a third node, and a control terminal; the second mirror branch circuit includes: a fourth transistor having a first terminal coupled to the second reference voltage terminal, a second terminal coupled to a fourth node, and a control terminal coupled connected to the control terminal of the third transistor; and a second voltage stabilizing circuit having a first terminal coupled to the fourth node and a second terminal coupled to a reference voltage terminal. 如請求項15所述之偏壓電路,其中:該第一鏡射分支電路包含一第五電晶體,具有一第一端耦接於該第二參考電壓端,一第二端耦接一第五節點,以及一控制端耦接該第四電晶體的該控制端;該偏壓訊號產生電路包含一第三穩壓電路,具有一第一端耦接該第五節點,以及一第二端耦接該基準電壓端。 The bias circuit as described in claim 15, wherein: the first mirror branch circuit includes a fifth transistor, with a first end coupled to the second reference voltage end, and a second end coupled to a The fifth node, and a control terminal coupled to the control terminal of the fourth transistor; the bias signal generating circuit includes a third voltage stabilizing circuit, having a first terminal coupled to the fifth node, and a second The terminal is coupled to the reference voltage terminal. 如請求項16所述之偏壓電路,其中該第五電晶體的電氣特性與該第四電晶體的電氣特性相同,該第三穩壓電路的電氣特性與該第二穩壓電路的電氣特性相同。 The bias circuit as claimed in item 16, wherein the electrical characteristics of the fifth transistor are the same as the electrical characteristics of the fourth transistor, and the electrical characteristics of the third voltage stabilizing circuit are the same as those of the second voltage stabilizing circuit The characteristics are the same. 如請求項15所述之偏壓電路,其中該運算放大器具有一第一輸入端耦接該第三節點,一第二輸入端耦接該第四節點,以及一輸出端耦接該第三電晶體的該控制端及該第四電晶體的該控制端。 The bias circuit as described in claim 15, wherein the operational amplifier has a first input terminal coupled to the third node, a second input terminal coupled to the fourth node, and an output terminal coupled to the third node the control end of the transistor and the control end of the fourth transistor. 一種訊號放大裝置,包含:一第一偏壓電路,包含:一第一電流鏡射電路,用以接收一第一參考電壓,及包含一第一參考分支電路及至少一第一鏡射分支電路,該第一參考分支電路用以根據一第一基準電流鏡射產生一第一參考電流,以及該至少一第一鏡射分支電路用以根據該第一參考電流產生至少一第一鏡射電流;一第一運算放大器,耦接該第一參考分支電路及該至少一第一鏡射分支電路,用以接收一第一電壓及一第二電壓,並用以根據該第二 電壓產生一第一控制電壓,其中該第一控制電壓是用以調節該第一電壓;以及一第一偏壓訊號產生電路,耦接該至少一第一鏡射分支電路,用以根據該至少一第一鏡射電流產生一第一偏壓訊號;其中該第一電壓為該第一參考分支電路上的一電壓,該第二電壓為該至少一第一鏡射分支電路上的一電壓或經調節的該至少一第一鏡射分支電路上的該電壓;一輸入端,用以接收一射頻訊號;一輸出端,用以輸出放大後之該射頻訊號;以及一第一放大器,耦接該訊號放大裝置的該輸入端與該訊號放大裝置的該輸出端之間,用以接收該第一偏壓訊號及放大該射頻訊號。 A signal amplifying device, comprising: a first bias circuit, including: a first current mirror circuit for receiving a first reference voltage, and comprising a first reference branch circuit and at least one first mirror branch circuit, the first reference branch circuit is used to generate a first reference current according to a first reference current mirror, and the at least one first mirror branch circuit is used to generate at least a first mirror image according to the first reference current Current; a first operational amplifier, coupled to the first reference sub-circuit and the at least one first mirror sub-circuit, for receiving a first voltage and a second voltage, and for receiving a first voltage and a second voltage according to the second a voltage to generate a first control voltage, wherein the first control voltage is used to adjust the first voltage; and a first bias signal generating circuit, coupled to the at least one first mirror branch circuit, for according to the at least one A first mirror current generates a first bias signal; wherein the first voltage is a voltage on the first reference sub-circuit, and the second voltage is a voltage on the at least one first mirror sub-circuit or The adjusted voltage on the at least one first mirror branch circuit; an input terminal for receiving a radio frequency signal; an output terminal for outputting the amplified radio frequency signal; and a first amplifier coupled to Between the input end of the signal amplifying device and the output end of the signal amplifying device is used for receiving the first bias signal and amplifying the radio frequency signal. 如請求項19所述之訊號放大裝置,還包含:一第二偏壓電路,包含:一第二電流鏡射電路,用以接收該第一參考電壓,及包含一第二參考分支電路及至少一第二鏡射分支電路,該第二參考分支電路用以根據一第二基準電流產生一第二參考電流,以及該至少一第二鏡射分支電路用以根據該第二參考電流產生至少一第二鏡射電流;一第二運算放大器,耦接該第二參考分支電路及該至少一第二鏡射分支電路,用以接收一第三電壓及一第四電壓,並用以根據該第四電壓產生一第二控制電壓,其中該第二控制電壓是用以調節該第三電壓;以及一第二偏壓訊號產生電路,耦接該至少一第二鏡射分支電路,用以根據該至少一第二鏡射電流產生一第二偏壓訊號; 其中該第三電壓為該第二參考分支電路上的一電壓,該第四電壓為該至少一第二鏡射分支電路上的一電壓或經調節的該至少一第二鏡射分支電路上的該電壓;以及一第二放大器,耦接該訊號放大裝置的該輸入端與該第一放大器之間,用以接收該第二偏壓訊號及放大該射頻訊號。 The signal amplifying device as described in claim 19, further includes: a second bias circuit, including: a second current mirror circuit, used to receive the first reference voltage, and includes a second reference branch circuit and At least one second mirror branch circuit, the second reference branch circuit is used to generate a second reference current according to a second reference current, and the at least one second mirror branch circuit is used to generate at least A second mirror current; a second operational amplifier, coupled to the second reference sub-circuit and the at least one second mirror sub-circuit, for receiving a third voltage and a fourth voltage, and for receiving a third voltage and a fourth voltage according to the first four voltages to generate a second control voltage, wherein the second control voltage is used to adjust the third voltage; and a second bias signal generating circuit, coupled to the at least one second mirror branch circuit, for according to the At least one second mirror current generates a second bias signal; Wherein the third voltage is a voltage on the second reference sub-circuit, the fourth voltage is a voltage on the at least one second mirroring sub-circuit or the adjusted voltage on the at least one second mirroring sub-circuit the voltage; and a second amplifier coupled between the input terminal of the signal amplifying device and the first amplifier for receiving the second bias voltage signal and amplifying the radio frequency signal. 如請求項19所述之訊號放大裝置,還包含:一第三偏壓電路包含:一第三電流鏡射電路,用以接收一第二參考電壓,及包含一第三參考分支電路及至少一第三鏡射分支電路,該第三參考分支電路用以根據一第三基準電流產生一第三參考電流,以及該至少一第三鏡射分支電路用以根據該第三參考電流產生至少一第三鏡射電流;一第三運算放大器,耦接該第三參考分支電路及該至少一第三鏡射分支電路,用以接收一第五電壓及一第六電壓,並用以根據該第六電壓產生一第三控制電壓,其中該第三控制電壓是用以調節該第五電壓;以及一第三偏壓訊號產生電路,耦接該至少一第三鏡射分支電路,用以根據該至少一第三鏡射電流產生一第三偏壓訊號;其中該第五電壓為該第三參考分支電路上的一電壓,該第六電壓為該至少一第三鏡射分支電路上的一電壓或經調節的該至少一第三鏡射分支電路上的該電壓;一第三放大器,耦接該訊號放大裝置的該輸入端與該第一放大器之間,用以接收該第三偏壓訊號及放大該射頻訊號;一第一低壓降穩壓器,用以根據一供應電壓產生該第一參考電壓;以及 一第二低壓降穩壓器,用以根據該供應電壓產生該第二參考電壓。 The signal amplifying device as described in claim 19, further comprising: a third bias circuit comprising: a third current mirror circuit for receiving a second reference voltage, and comprising a third reference branch circuit and at least A third mirroring branch circuit, the third reference branch circuit is used to generate a third reference current according to a third reference current, and the at least one third mirroring branch circuit is used to generate at least one The third mirror current; a third operational amplifier, coupled to the third reference branch circuit and the at least one third mirror branch circuit, used to receive a fifth voltage and a sixth voltage, and used for receiving a fifth voltage and a sixth voltage according to the sixth a voltage to generate a third control voltage, wherein the third control voltage is used to adjust the fifth voltage; and a third bias signal generating circuit, coupled to the at least one third mirror branch circuit, for according to the at least one A third mirror current generates a third bias signal; wherein the fifth voltage is a voltage on the third reference branch circuit, and the sixth voltage is a voltage on the at least one third mirror branch circuit or the adjusted voltage on the at least one third mirror branch circuit; a third amplifier coupled between the input terminal of the signal amplifying device and the first amplifier for receiving the third bias signal and amplifying the radio frequency signal; a first low-dropout regulator for generating the first reference voltage according to a supply voltage; and A second low-drop voltage regulator is used to generate the second reference voltage according to the supply voltage.
TW110143374A 2020-11-27 2021-11-22 Bias circuit and signal amplification device TWI784806B (en)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046609A1 (en) * 2002-09-11 2004-03-11 Jie Xu Active current bias network for compensating hot-carrier injection induced bias drift
US20070164721A1 (en) * 2006-01-19 2007-07-19 Han Kang K Regulated internal power supply and method
US20080284501A1 (en) * 2007-05-16 2008-11-20 Samsung Electronics Co., Ltd. Reference bias circuit for compensating for process variation
US20090085549A1 (en) * 2007-10-02 2009-04-02 Qualcomm Incorporated Bandgap reference circuit with reduced power consumption
US8618862B2 (en) * 2010-12-20 2013-12-31 Rf Micro Devices, Inc. Analog divider
TW201603481A (en) * 2011-05-13 2016-01-16 西凱渥資訊處理科技公司 Apparatus and methods for biasing power amplifiers
US20170019082A1 (en) * 2015-07-14 2017-01-19 Murata Manufacturing Co., Ltd. Power amplification module
US20190068131A1 (en) * 2017-03-13 2019-02-28 Murata Manufacturing Co., Ltd. Power amplifier module
US20190280658A1 (en) * 2018-03-09 2019-09-12 Murata Manufacturing Co., Ltd. Power amplifier module

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040046609A1 (en) * 2002-09-11 2004-03-11 Jie Xu Active current bias network for compensating hot-carrier injection induced bias drift
US20070164721A1 (en) * 2006-01-19 2007-07-19 Han Kang K Regulated internal power supply and method
US20080284501A1 (en) * 2007-05-16 2008-11-20 Samsung Electronics Co., Ltd. Reference bias circuit for compensating for process variation
US20090085549A1 (en) * 2007-10-02 2009-04-02 Qualcomm Incorporated Bandgap reference circuit with reduced power consumption
US8618862B2 (en) * 2010-12-20 2013-12-31 Rf Micro Devices, Inc. Analog divider
TW201603481A (en) * 2011-05-13 2016-01-16 西凱渥資訊處理科技公司 Apparatus and methods for biasing power amplifiers
US20170019082A1 (en) * 2015-07-14 2017-01-19 Murata Manufacturing Co., Ltd. Power amplification module
US20190068131A1 (en) * 2017-03-13 2019-02-28 Murata Manufacturing Co., Ltd. Power amplifier module
US20190280658A1 (en) * 2018-03-09 2019-09-12 Murata Manufacturing Co., Ltd. Power amplifier module

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