TWI784319B - Euv lithography system for dense line patterning - Google Patents

Abstract

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N＞1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Description

Ultra-short UV lithography system for dense patterning

The present invention relates to exposure tools for use in the lithographic processing of semiconductor wafers, and more particularly to exposure tools configured to form patterns of parallel lines separated from each other by tens of nanometers or less on the wafer Simplified exposure tools. [Related applications]

This application claims priority from each and every of the following U.S. Provisional Patent Applications: No. 62 filed June 20, 2016 and entitled "Dense Line Extreme Ultraviolet Lithography System with Distortion Matching" /352,545; No. 62/353,245, filed June 22, 2016 and entitled "Extreme Ultraviolet Lithography System that Utilizes Pattern Stitching"; filed March 24, 2017 and entitled "Temperature Controlled Heat Transfer Frame for Pellicle" No. 62/476,476; No. 62/487,245 filed on April 19, 2017 and titled "Optical Objective for Dense Line Patterning in EUV Spectral Region"; No. 62/490,313 of "Illumination System with Flat 1D-Patterned Mask for Use in EUV-Exposure Tool"; Exposure Tool, No. 62/504,908. This application also claims priority from International Patent Application No. PCT/US2017/033637, filed May 19, 2017, and entitled "EUV Lithography for Dense Line Patterning." The disclosures of each of the patent documents identified above are incorporated herein by reference. Collectively, the patent documents identified above are referred to herein as our prior applications.

Current commercially available EUV lithography equipment (hereinafter referred to as general EUV system) is configured to image a photomask mask carrying an arbitrary two-dimensional (2D) pattern thereon onto a semiconductor wafer (substrate) on the rectangular area. Due to the 2D nature of this pattern that must be optically transferred and imaged from the reticle onto the wafer, prior art EUV systems had to be implemented as scanning systems to provide the relative displacement between the substrate and reticle (the scanning systems are currently By using a moving stage for the reticle and at least one or more moving stages for the substrate, the reticle pattern can be scanned with sufficient accuracy and resolution without the scanning system The transfer of all features of the substrate to the substrate is rather complex and practically impossible). The structural and operational complexity of currently used systems necessarily and substantially increases operating costs and reduces the number of exposed substrates per unit of time, in part due to the limited transmission of EUV light through the optical system. Furthermore, since pattern transfer requires a process of optical imaging in 2D, the optical element strings of existing general-purpose EUV systems require and are characterized by high complexity. For example, such systems include: six ground mirrors in the projection portion of the optical string, wherein the mirror surface roughness is less than 0.1 nm rms and the mirror alignment tolerance is less than about 1 nm; Structurally complex and adjustable lighting sections; and large masks or masks with complex reflective coatings. Additionally, correct pattern transfer requires the use of complex combinations of alignment marks. All of this necessarily results in high costs for the design and manufacture of general EUV systems.

Other major issues (which are well recognized and require practical solutions) in ensuring the commercial competitiveness of general EUV systems include: (A) Insufficient optical power from EUV light sources that general EUV systems are typically equipped with. Currently, the typical output is about 40 W to 80 W. This problem is exacerbated by the fact that the optical power delivered from the EUV light source to the reticle by the illumination subsystem of the EUV system is further reduced due to the limited (approximately 70% each) reflectivity of the EUV mirrors. The illumination subsystem is otherwise interchangeably referred to as an illumination unit (IU) or an illumination lens (IL). (B) Sensitivity to defects and/or particles on the reticle mask. In fact, since common EUV systems are configured to image 2D patterns from the reticle onto the wafer at high resolution, the pattern transferred to the wafer can be easily damaged by defects or particles on the reticle. In other words, every defect or particle larger than tens of nanometers on the reticle can damage the pattern printed on the wafer. (C) Very stringent requirements on the optical aberrations of the projection subsystem imposed by the 2D nature and high resolution of the arbitrary pattern to be printed. The projection subsystem is otherwise interchangeably referred to as the projection optics (PO) subsystem (also known as the projection lens, PL).

Currently used alternatives to EUV lithography processes, and in particular, include processes for multiple patterning of substrates with Deep Ultraviolet (DUV) light, preferably having a wavelength around 193 nm and using immersion lenses ) can be less expensive but involves complex wafer handling between multiple exposures. Eventually, as the required resolution of features increases, a point will be reached where the cost of the patterning process is similar to that of general purpose EUV exposure.

The use of such general EUV systems and/or alternative immersion systems for printing patterns with simple geometries is not economically attractive for any of the above reasons. Therefore, there is a need to configure a simplified EUV system whose design and operating characteristics will not only meet the optomechanical requirements involved in simplifying the image transfer of reticle patterns to semiconductor substrates, but also whose cost will be beneficial to the industry.

Embodiments of the present invention illustrate a dedicated 1D extremely short UV (EUV) exposure tool or scriber specifically configured to print an array of straight lines on a patternable surface of a substrate. Embodiments additionally provide methods for delivering radiation through an extremely short UV (EUV) exposure tool and forming an optical image of an object (including an array of rectilinear lines) on such a substrate.

In particular, embodiments provide a 1D EUV scriber comprising: an EUV source configured to emit EUV radiation; a holder configured to hold a pattern source defining a substantially 1D pattern in a substantially stationary position In position; a workpiece stage configured to move a surface of the workpiece stage relative to a pattern source held by the holder; an IU configured to illuminate a substantially 1D pattern with EUV radiation from the source; and A PO subsystem between the IU and the workpiece stage, the PO subsystem configured to form an optical image of the 1D pattern in the image surface as the image surface is being repositioned by the workpiece stage. In certain instances, the image surface is optically conjugated to the substantially 1D pattern.

Embodiments also provide a ID EUV liner comprising: an EUV source configured to emit EUV radiation; a pattern source carrying a substantially ID pattern; an IU configured to illuminate with EUV radiation from the source a substantially 1D pattern; a workpiece stage; and a PO subsystem between the IU and the workpiece stage configured to form in the image surface as the image surface is being moved by the workpiece stage Optical image of the 1D pattern. Here, the PO subsystem includes first and second reflectors, at least one of which includes first and second spatially distinct reflective elements. In one case, the spatially distinct reflective elements are spatially disconnected from each other.

Embodiments of the present invention also provide a ID EUV liner comprising an EUV source configured to emit EUV radiation; a pattern source carrying a substantially ID pattern; an IU configured to apply EUV from the source radiation irradiating the substantially 1D pattern; and a PO subsystem configured to reduce by a factor of N > 1 when the image surface is being repositioned relative to the pattern source and when the image surface is optically conjugated to the substantially 1D pattern An optical image of a 1D pattern is formed on the image surface. Here, the ruler is configured such that the 1D pattern has a first spatial frequency, its optical image has a second spatial frequency, and the second spatial frequency is at least twice the first spatial frequency.

In accordance with preferred embodiments of the present invention, EUV exposure tools and methods are disclosed for using novel one-dimensional patterns containing spatially densely packed parallel lines to image selected substrates (and in specific cases— substrates with shadow-defined patterns and in certain cases spatially distorted patterns) for photolithographic marking.

As used herein, and unless otherwise specified, the term "one-dimensional pattern" (or "1D pattern") refers to a pattern defined on a photomask or on the surface of a reticle for transfer to a selected substrate using photolithographic methods. photoresist (such as a semiconductor wafer) to create an image of this 1D pattern) and generally extend the geometric pattern across the surface along two axes transverse to each other. A 1D pattern can vary along a first axis of the pattern while remaining substantially constant along a second axis (i.e., a 1D pattern can be characterized by geometric variations along a second axis that do not exceed values along the 50% of the variation observed along the first axis, preferably no more than 20% of the variation observed along the first axis, more preferably no more than 10% of the variation observed along the first axis, or even more preferably within 5% or less of the variation observed along the first axis, and optimally within 1% or less of the variation observed along the first axis). An example of a 1D pattern is provided by any collection of spaced substantially identical, parallel, elongated pattern elements, such as a combination of straight parallel lines or slits in an otherwise opaque screen defined at a light mask. In particular cases, a 1D pattern in the vicinity may form a linear (1D ) grating (such as a 1D diffraction grating). Additionally, the 1D pattern may still have small variations along the first and/or second axis in order to correct for imaging distortions caused by deformation of the optical system or substrate, as will be appreciated by those skilled in the art. For the purposes of this disclosure, an element or component containing a substantially 1D pattern (and regardless of the particular configuration of such element or component, eg, whether as a reticle or mask) may be referred to interchangeably as a pattern source.

In contrast, the term "two-dimensional pattern (2D pattern)" is defined to mean a collection of pattern elements, the variation or alteration of which must be defined along two mutually transverse axes. One of the simplest examples of a 2D pattern is provided by a grid or mesh (which forms a 2D grating when it has a spatial period defined along two transverse axes). With respect to the pattern of a photomask of a reticle as disclosed herein, 1D and 2D patterns are considered as such regardless of the curvature of the surface of the substrate (or photomask) on which the 1D and 2D patterns are formed. For simplicity, the EUV system of the present invention, in which the specific examples of objective lenses discussed here are intended to be used, is specifically and purposefully configured for imaging a 1D reticle pattern, and is referred to herein as a 1D EUV system. For simplicity and in comparison, an EUV system configured to provide imaging for a 2D patterned reticle, such as a general-purpose EUV system, may be referred to as a 2D EUV system.

Embodiments of the present invention provide solutions to a combination of practical problems encountered in the prior art by using a 2D EUV system:

- The problem with the current unavailability of cost-effective lithography methods and systems configured to print periodic features at 10 nm (and smaller) pitches in the manufacture of advanced semiconductors is the use of The following are addressed by the design of EUV exposure tools that optically image spatially dense patterns of high-quality linear gratings (interchangeably referred to herein as "dense lines"): 1) EUV light; 2) reticles, It is configured (on an appropriate reticle stage) to be (2i) positioned in a substantially fixed relationship relative to the illumination and projection subsystems of the exposure tool, and (2ii) in contrast to common EUV systems, which do not scan, and (2iii) carrying thereon a substantially linear diffraction grating (which may be an amplitude grating or a phase grating); 3) a projection optical system having an NA of 0.40 to 0.60 and an obscuration of 20% to 40% (in terms of NA ; pupil obscuration is therefore squared); and 4) scanning the wafer stage.

- The problem presented by the lack of proper matching overlay between the image of the mask pattern and other patterns already present on the wafer is by properly adjusting the scanning trajectory of the wafer stage, and by Rationally varying the optical magnification of the reticle pattern during the circular process and the "magnification tilt" (the latter term representing a linear change in magnification across the exposure field) are addressed by using the 1D EUV system of the present invention. In this case, the problem of geometrically matching the continuous scanning exposure field with the distortion of layers printed using known tools (the operation of which produces discontinuities between adjacent frames) is solved by scanning, as the case may be, Each line is solved twice, exposing every other frame in the first pass, and exposing the alternate frame in the second pass.

- The persistent problem of insufficient quality stitches formed between directly adjacent exposure fields on a wafer is achieved by positioning and properly shaping one of the approaching reticle, wafer, and intermediate image planes to span The entire exposure area of the wafer is established in a spatially consistent and regular exposure manner. The "blind" field diaphragm defining the periphery of the individual exposure field is included in the 1D EUV system of the present invention. In a particular case, the blind field diaphragm has an aperture with a polygonal perimeter.

- The persistent problem of insufficient illumination levels commonly used in exposure tools utilizing EUV light is solved by providing first and second reflectors with (1) an array of polyhedral fly-eye reflectors and (2) placement in The illumination optics assembly of the relay mirror between the reflector and the mask is solved in the dense-circuit 1D EUV lithography system of the present invention. In this 1D EUV system, the shape of one of the fly's-eye array reflectors preferably matches a projection optics assembly optimized for two-beam interference across the entire range of pitch values characterizing the 1D reticle pattern The shape of the entrance pupil.

- The persistent problem of insufficient illumination levels commonly used in exposure tools utilizing EUV light is solved by providing first and second reflectors with (1) an array of polyhedral fly-eye reflectors and (2) their surfaces A reticle having a finite radius of curvature (ie, curved) and having a substantially linear diffraction grating pattern thereon is addressed in the dense line 1D EUV lithography system of the present invention. In this 1D EUV system, the shape of one of the fly's-eye array reflectors preferably matches a projection optics assembly optimized for two-beam interference across the entire range of pitch values characterizing the 1D reticle pattern The shape of the entrance pupil. In addition, this 1D EUV system is designed to image, each reflector of one of the fly's eye arrays to projection optics optimized for two-beam interference across the entire range of pitch values characterizing the 1D reticle pattern The entrance pupil of the assembly.

Implementation of the idea of the present invention provides for optically high-resolution (in this case, periodic line patterns, for example, corresponding to ten to twenty nanometer pitches or periods, configured to be cost-effectively Preferably less than 10nm, more preferably several nanometers (for example, 5nm or less) to transfer dense wiring patterns to realize 10nm and 7nm node semiconductor devices (according to the international technology roadmap for semiconductors (e.g. ITRS 2.0) exposure tool or machine. The idea of the present invention stems from the realization that modern high density semiconductor wafer design is increasingly based on 1D geometric patterns. Embodiments of the 1D EUV system of the present invention, specifically configured to optically image a 1D pattern from a reticle, such as a pattern representing a 1D grating, onto a substrate of interest possess a transparent structure and Operational advantages due to:

- The optical system of a 1D EUV system is substantially simplified compared to that of a 2D EUV system and may be able to include fewer mirror surfaces, which actually utilizes the required smaller optical power from the light source (e.g. tens of watts, at As low as about 20 W in one instance) provides good quality exposure.

- Due to the 1D nature of the reticle pattern to be transferred onto the semiconductor wafer, (a) there is no longer a need to scan the reticle stage relative to the wafer stage; Mask stages or supports do not include scanning stages with long mechanical strokes; (b) in certain cases, the mask pattern defines a linear grating and can be detected by a substantially linear diffraction grating (binary pure amplitude grating, or pure phase grating) form. In a specific implementation where the reticle is formatted as a phase grating, the diffraction efficiency of the 1D EUV system is greatly improved, thereby increasing effective product yield; (c) since the optical imaging of the 1D reticle pattern is reduced to (Essentially) 1D imaging—that is, 1D EUV systems require more relaxed requirements for the optical aberrations of PL since the spatial variation of the image formed on the resist carried by the substrate exists in only one direction ( compared to those requirements of conventional 2D EUV systems).

- Since the system's optical train eliminates some or even multiple optical surfaces (compared to 2D EUV systems) from scanning reticle stages, pellicles, and other components, the cost of the proposed EUV grating machine can be much lower.

- It is also understood that minor defects and particles on the grating pattern of the reticle do not significantly affect the exposure since the exposure at any point on the wafer is the result of the integration of light passing through the reticle at different points across the reticle . For example, micron-sized particles or pattern defects on the reticle will destroy the fidelity of images printed by 2D EUV systems, but will only produce Negligible variation in exposure dose.

In accordance with the concepts of the present invention, one specific instance of a 1D EUV system is at least configured to perform the following operations - Utilize an EUV light source configured to deliver at least 20 W of optical power to the IU with a central lobe-shaped monopole illumination pattern; - Provides for aligning 1D patterns in predefined directions (optional, To facilitate exposing patterns in different orientations for different layers (e.g. vertical orientation for a given 1D pattern on a first layer and horizontal orientation for a 1D pattern on a second layer), the substrate can be rotated 90 degrees for exposure layers) onto a substrate (preferably having a diameter of 300 mm or greater) from a reflective or transmissive mask; - By using a central obscuration with an NA of 0.4 or greater and a NA of 40% or less and at an irradiation dose (as measured at the wafer plane) of approximately 30 mJ/cm2 of at least 50 per hour The PL of wafer (wph) throughput (preferably 70 wph; more preferably 100 wph; even more preferably greater than 100 wph) defines the operation of the lithographically exposed substrate. In one implementation, the exposure fields (on the substrate) are configured as diamond shapes for reliable and repeatable stitching of immediately adjacent fields; - In one implementation, optical adjustments via mag-tele shifting are employed; and - Ensure that the overlay between the printed layer and the underlying layer has an average +3 sigma value of 1.7 nm or less.

Details of various specific examples, portions, components of the overall system are discussed in several priority provisional applications (identified above; collectively - "our Prior Applications"), the disclosures of each of which are described in The manner of citation is incorporated in the present invention.

1D EUV A general schematic of a concrete instance of the system

A generalized schematic diagram of an embodiment 100 of a ID EUV system configured in accordance with the inventive concept is shown in FIGS. 1A and 1B . The system may include one or more EUV light sources (as shown—eg, light source 114 operating at a wavelength of 13.5 nanometers). The system includes: an optical illumination subsystem or unit (IU), which includes a first reflector 118 and a second reflector 122, and a relay reflector 126; and a PO subsystem, a reflective objective reflector comprising two or more mirrors, at least one of which has an area defining an optical obscuration (a two-mirror objective is shown containing a first mirror 130 and a second mirror 134, each containing a corresponding central obscuration 130A, 134A). The term optical obscuration is used herein to mean at least a portion (of an optical element) within the boundaries of which further transmission of light incident on the optical element to the optical element in the next line is prevented or even blocked. A non-limiting example of occlusion in the case of a reflective objective as shown is provided by (i) a through-opening in the substrate of a curved mirror, such as curved primary mirror 130A, within its boundaries, incident thereto Light on the mirror is not reflected further towards bend assist mirror 130B but is actually transmitted through the through opening, and (ii) lack of reflective coating in predetermined areas of the mirror (essentially defining the same optical effect). The term central obscuration defines an obscuration centered on the optical axis.

Reflector 118 collects radiation 150 emitted by light source 114 and transmits radiation 150 as radiation 140 to relay mirror 126 via reflection off reflector 122 . The system further includes a pattern source 144 (configured as a reticle in this example) disposed in optical communication with the IU and PO. Pattern source 144 carries a spatially dense 1D pattern and is positioned so as to illuminate with radiation 148 delivered from light source 114 and reflected to pattern source 144 by relay reflector 126 via obscuration 134A. As shown, pattern 144 is a photomask operating in reflection (in a related embodiment, the photomask may optionally be configured as a transmissive photomask). It is also intended that, depending on the particular implementation of the system 100, the substrate surface of the pattern source 144 on which the 1D pattern is carried may be curved (in which case the reflective pattern source has non-zero optical power and may be referred to as a curved pattern source) or flat (in which case the reflective pattern source has zero optical power and may be referred to as a flat pattern source).

Additionally, the 1D pattern on the reticle can be distorted in a way that compensates for the undesirable distortion of the PO. When the 1D pattern carried by the reticle is configured as an appropriately sized linear diffraction grating, the pattern source 144 diffracts the radiation 148 incident thereon to form a diffraction pattern comprising spatially distinct beams 152A, 152B. Beams, beams 152A, 152B respectively represent diffraction orders (in one example, +1 and -1 orders of diffraction) and propagate towards the mirror 130 of the PO (zero order diffraction can be suitably blocked from such propagation, as in this technique A known). In combination, the PO's first reflector 130 and second reflector 134 redirect the diffracted beam via obscuration 130A onto the workpiece or substrate 156 of interest to expose an image of the 1D pattern bearing the pattern source 144 thereon. at least one layer of photoresist. It should be understood that according to the inventive concept, the reticle is placed in a substantially fixed spatial and optical relationship with respect to the IU and PO subsystems, since the position and orientation of the reticle are both selected and defined in 1D EUV The exposure tool is internally fixed (except for optional minor adjustments that may be required to maintain focus and alignment). The term "substantially fixed" means and is defined when a component, such as a reticle, whose mechanical support does not contain components configured to synchronize with the motion of the workpiece-stage or wafer-stage during operation of the exposure tool. spatial relationships and/or situation.

The system may also include: a fixed size or a variable aperture 160 (e.g., a variable slit of a particular shape; ” or “blind field stop” or simply “field stop”); the pupil stop or aperture 164 (sized to match the desired shape of the entrance pupil of the PO); the carrier supporting the reticle stage/mounting unit (not shown); wafer stage 156A equipped with appropriate stage movers (not shown) to provide alignment of the wafer relative to pattern source 144 and beams 152A, 152B as required by the lithography exposure process 156 for scanning; and other auxiliary components (eg, vacuum chamber, weighing system, and temperature control system) as needed. The x-axis is defined to be perpendicular to the axis along which scanning is performed during system operation, and the y-axis is defined to be parallel to this scanning axis. In the specific example shown in FIGS. 1A and 1B , the 1D pattern includes lines parallel to the Y axis.

Various variations of the proposed implementation are within the scope of the invention. For example, FIG. 5 schematically illustrates an embodiment 170 of a ID EUV system in which the relay mirror 126 has been removed compared to the embodiment 100 of FIG. 1B . This 1D EUV system without relay reflectors is discussed in more detail below. 12 provides an illustration of yet another alternative implementation of a train of optical elements for a 1D EUV system, in which a pattern source (shown as 144' and having a non-zero curvature of the surface carrying a substantially 1D pattern) is illuminated off-axis, as discussed below. .

Referring again to Figures 1A, 1B, the 1D EUVD exposure tool is additionally supplemented by a control unit (control electronics), optionally equipped with a programmable processor and configured to control at least the wafer-stage (and in some In a specific example, the operation of at least one of the light source, IU and PO subsystem). (For simplicity of description, Figure 5 and Figure 12 do not illustrate the control unit.)

lighting unit ( IU ) instance

In accordance with the inventive idea, in one example of an embodiment, the IU as a whole is configured to operably correspond to a 2-mirror format as discussed in more detail below and in our prior application (or in the related embodiment , a 3-mirror) embodiment of the PO of an astigmatic lens and works optically with the embodiment of the PO, and may include at least one reflector unit having a "fly's eye" configuration. One implementation of the IU design assumes a 16.5 mm wide diamond-shaped exposure field on the image surface (e.g., the surface of the workpiece, such as a wafer mounted on an upper wafer-stage in certain cases), which achieves a Sew properly. It is also assumed and implemented that the zeroth order diffracted beams formed at the substantially 1D pattern of the pattern source 144 are blocked such that the optical interaction of the +1 and -1 order beams forming the optical image of the substantially 1D pattern at the image plane Doubles the spatial frequency of the 1D pattern in the optical image and also allows near normal incidence illumination. (Proper blocking of the zeroth order diffracted beam can be achieved when desired by central obscuration in the PO, or by use of dedicated radiation blocking elements as discussed elsewhere in this application.)

Schematic diagrams representing some details of one specific example of an IU are shown in FIGS. 2A, 2B, and 2C. Additional details and/or specific examples are disclosed in our prior applications. A particular example of illuminator 200 is configured to operate with multiple EUV radiation sources (as discussed below) and provide:

- A reasonably defined illumination pattern, the shape of which is chosen for the maximum incoherence of light that is incompatible with an array of straight lines formed with a pitch of tens of nanometers (eg, 20nm to 30nm) Provides contrast loss. For example, the IU and pattern source cooperate in an operable manner to form an illumination pupil (for PO subsystem). The goal of maintaining the highest possible contrast is achieved by directing all EUV radiation collected by the IU from the EUV source within the boundaries of the illumination pupil thus defined;

- the two first fly-eye reflectors FE1-A and FE1-B of the individual reflectors 210, which may have a diamond-shaped perimeter, as shown in Figure 2B; and

- A second "fly's eye" reflector array FE2 configured from tiles formed by reflectors 220 (with hexagonal or annular perimeters) to define leaf-shaped apertures B24 and efficiently combined from multiple radiation sources 214- A. Radiation inputs LA, LB received by 214-B simultaneously conserve optical expansion, and

- A curved relay mirror as part of the lighting unit;

Each of the fly-eye arrays of reflectors (FE1-A, FE1-B, FE2) is configured to correspond to a two-dimensional The array captures and reflects radiant energy obtained from respective corresponding radiating objects. This array of mirrors or facets may be referred to as a "fly-eye reflector" (or even a "fly-eye lens", as is sometimes used in the art), usually without the aid of an additional larger viewing lens and/or reflector. so called). As shown, light from light source 214-A is captured by reflector FE1-A; light from light source 214-B is captured by reflector FE1-B; light reflected by FE1-A and FE1-B is captured by FE2. Each individual mirror forms an image of the radiating object as seen from the viewpoint of that individual mirror's position. In other words, there is one unique element in either FE1-A or FE1-B (but not both) associated with each element of FE2. Thus, as configured, each of the individual mirrors of FE1-A and FE1-B have a respective corresponding mirror in the FE2 array. For example, individual reflector 210-i of array FE1-A forms an image of light source 214-A at individual reflector 210-i of array FE2, while individual reflector 210-j of array FE1-B forms an image of light source 214-A at individual reflector 210-i of array FE2. An image of light source 214-B is formed at individual reflector 210-j.

In the design discussed above, there are only three sequential reflections of the beam propagating through the illuminator, when compared to more complex designs of the prior art, and since each mirror typically has a reflectivity of only 65% to 70% , which leads to a significant improvement in optical transmission. Compared to existing designs used in general EUV machines, the number of reflections is approximately half, so the amount of light transmitted through the IU of embodiments of the present invention is approximately doubled compared to that of general EUV systems. In practice, the transmittance through the system can be estimated as a value of X^N, where X is the typical reflectance (65% to 70%) and N is the number of reflections. In conventional general systems, the IU has at least five (or more than five) mirrors, while specific examples of the present invention include as few as 3 mirrors. Thus, the IU transmission increases from 11% to 17% (for a generic EUV system with 5 mirrors) to 27% to 34% for the specific examples of the present invention. The effect is even more pronounced after considering the PO subsystem, which uses about six mirrors in a general EUV system and only two mirrors in the specific example of the present invention. In this case, the transmission of 0.9% to 2% for a typical general-purpose EUV system (which includes transmission via IU and PO, but does not include the presence of a reticle) increases by orders of magnitude to 12% when using the specific example of the present invention to 17%.

的光學擴展，其中N_FE 為FE2陣列中的個別鏡的數目（及FE1-A及FE-B中的個別鏡的總和）。With further reference to Figures 1, 2A, 2B, a first-order layout of the IU is shown schematically in Figure 2D, where the mirror elements (each having a specified surface area ai and focal length fi) are drawn as equivalent lens elements for simplicity of illustration . In general, it should be appreciated that multiple arrays of FE1 mirrors are used to multiplex light received from multiple light sources to provide an IU equal to

where NFE is the number of individual mirrors in the FE2 array (and the sum of the individual mirrors in FE1-A and _FE -B).

In practice, the number of individual mirror elements in the FE2 array can be determined based on considerations of the required uniformity of light at the reticle 144 and the filling of the entrance pupil of the PO. In one particular embodiment, the FE2 mirror array includes 98 hexagonal elements 220 (as shown in FIG. 2C ), each of which has an angular width of 0.01996 radians as seen from the position of wafer 156 . With the solid angle subtended by each of the 220 elements (as seen from the wafer) being 3.451e ^-4 steradians, this results in an elemental optical spread of ^0.04698 mm sr (for a 16.5 mm wide regular rhomboid field) (associated with each of the 220 elements), and a total optical extension of 4.604 mm ² sr for the entire FE2 array.

The angular size of the individual elements 210 of the array FE1-A (or FE1-B, each of which has 98/2=49 individual micromirror elements) can be obtained by understanding the angular size of the individual elements of the FE2 array and the size of the light source Under the evaluation:

分別表示FE1及FE2的個別鏡元件所對的角度。雙撇號表示其為所成像所對的角度。

表示自光瞳至影像平面的距離，且

表示自源至FE1的距離。in

Denote the angles subtended by the individual mirror elements of FE1 and FE2, respectively. Double primes indicate that it is the angle being imaged.

represents the distance from the pupil to the image plane, and

Indicates the distance from the source to FE1.

To complete the evaluation of the first-order design of the 1D EUV system, additional free parameters are selected: In a specific implementation, the distance from the light source to the corresponding FE1 array is chosen to be t ₀ =500 mm; the separation relay mirror 126 and the grating mask 144 The distance of is selected as t ₃ =1 meter, and the distance between the FE2 array and the relay mirror 126 (corresponding to the case of unit magnification imaging) is t ₂ =t ₃ +t ₄ . The distance from FE1 to FE2 is t ₁ =d ₂ *t ₀ /d _S of about 872 mm. It should be appreciated that other sets of free parameters may be used to design related specific instances.

=39.7毫米； -    FE2寬度（六邊形的平大小至平大小）：d₂ =d₂ p*t₂ /(t₃ +t₄ ) = 7.24毫米；In addition, the lateral dimensions of the FE1-A, FE1-B and FE2 arrays are set as follows: - FE1 width (corner to corner of rhombus): d ₁ =t ₀

=39.7 mm; - FE2 width (flat size to flat size of the hexagon): d ₂ =d ₂ p*t ₂ /(t ₃ +t ₄ ) = 7.24 mm;

The total dimension across the FE1-A (or FE1-B) array is 8 elements, each 39.7 mm wide (corner to corner) in the particular example, totaling about 317.6 in the x-direction as shown in Figure B-2 mm wide, or 9*39.7/sqrt(2)=252.65 mm wide along an axis inclined at 45 degrees relative to the x-axis in Figure B-2. In general, the width of the FE1 array along the x-axis is generally between 10 mm and 300 mm.

Width of the FE2 array: In the particular implementation of Figure 2C, there are 7 individual 220 mirror elements across the array, each 7.24 meters wide, resulting in the FE2 array having a width along the x-axis of 50.68 millimeters as shown. In general, however, this "waist" of the FE2 array is between 10 mm and 300 mm, preferably between 30 mm and 70 mm.

The width of the relay mirror 126 away from the mask 144 is 1 meter, and the relay mirror 126 faces 0.125*0.429 radians in the x direction and the y direction. In certain cases, the reticle 144 is 6*16.5=99 mm wide (corner to corner), resulting in a 215 mm by 520 mm dimension for the relay mirror 126 . Generally, however, the size of the relay mirror 126 is in the range between 100 mm by 700 mm and 300 mm by 400 mm.

；一般而言，在0.01屈光度與100屈光度之間； （B）對於中繼鏡126：在一個具體實例中

； （C）對於陣列FE2：在一個具體實例中

； 大體在0.01屈光度與100屈光度之間。應理解，術語光功率為透鏡、鏡或其他光學系統的特性，其界定此系統會聚或發散入射於其上的光的空間分佈所達到的程度。光功率的量測值等於與光學系統的焦距值互逆的值。In a specific example the optical power of the mirror is chosen to be: (A) For the array FE1: in a specific example

; Generally speaking, between 0.01 diopters and 100 diopters; (B) For the relay lens 126: in a specific example

; (C) for array FE2: in a concrete instance

; Generally between 0.01 diopters and 100 diopters. It should be understood that the term optical power is a property of a lens, mirror, or other optical system that defines the degree to which this system converges or diverges the spatial distribution of light incident thereon. The measured value of optical power is equal to the reciprocal value of the focal length of the optical system.

It should be appreciated that the proposed embodiment of the IU provides an image plane between the FE-2 reflector 122 and the relay mirror 126 . This plane is optically conjugate to both the reticle 144 and the plane of the wafer 156 and provides a suitable location to position (variable size as the case may be) the aperture 160 to control the dose of radiant power delivered to the reticle 144 and to define the radiant power delivered to the reticle 144 and defined on the wafer. The boundary of the exposure field formed at .

Additional relevant embodiments of IUs configured according to the ideas of the present invention (and, in particular, configured to operate with a single EUV-only radiation source) are found in our previous applications (and in particular, in Discussed in U.S. Provisional Application Nos. 62/490,313 and 62/504,908).

Examples of Projection Optics Subsystems

In one specific example, a 1D EUV system for projection lithography is configured to employ a PO section comprising a 2-mirror system. The PO portion is supplemented by a reticle carrying a substantially 1D mask pattern on a flat surface (eg, a reticle formed by defining a 1D reflective diffraction grating on a planar juxtaposed substrate). The PO in this embodiment was configured to include a 2-mirror, unipolar (ie, the distribution of light at either pupil plane contains one "pole" or area of illumination) illumination subsystem. In a related embodiment, the PO includes a 3-mirror anstigmator lens.

In one specific implementation shown in FIG. 3A , for example, a 1D EUV system includes a 1D EUV system configured to provide a 6x reduction or reduction (of the reticle pattern due to imaging), NA=0.4, and 16.5 mm on wafer (diameter) times 5 mm diamond exposure (16.5 mm represents the field width in the X direction perpendicular to the scan direction; 5 mm represents the field length in the Y direction, which is parallel to the printed line and wafer stage scanning motion The direction of the optical imaging of the astigmatic projection optics two-mirror system 300 in the case of optical imaging, when using coaxial illumination, the aberration is small (about 12 millimeter wave or less) in the rhombic exposure. The chosen shape of this diamond-shaped exposure field is suitable for stitching immediately adjacent fields. The primary mirror 310 of this design has a diameter of approximately 583 millimeters. The aspheric distribution of the mirrors 310, 320 is mainly rotationally symmetric with minimal astigmatic terms. The coma Rennick term is not used in the case of on-axis illumination, but can be introduced in specific cases where the illumination is off-axis. The system further utilizes a flat reticle separated from the auxiliary mirror by a distance of between about 800 mm and 2000 mm (as shown - about 1400 mm). The entrance pupil of the system 300 is about 2.175 meters from the reticle of the 1D EUV system (near the wafer/substrate), while the distance from the reticle to the mirror 310 is about 1 meter. The parameters for the simulated Zernike aberration of the system 300 are listed in FIG. 3B ). In a 1D EUV system so implemented, the beam from the source undergoes interactions with only six reflectors (two reflections at the reflector array of the IU and one reflection at the relay mirror) after traveling towards the target substrate. ; one reflection at the reflective reticle; and two reflections at the mirror of the PO), thereby reducing the optical power loss after reflection compared to 2D EUV systems, and therefore, reducing the output power requirements for the EUV light source How demanding. (In fact, in a typical 2D EUV system, the beam is reflected at least a dozen or more times by the reflectors that form the system's string of optics.)

Since the pattern on the reticle contains a 1D grating, the incident light is diffracted approximately in the XZ plane. Accordingly, each of the mirrors 310, 320 may be configured as two separate segments providing the necessary portion of a theoretically continuous annular curved reflective surface.

In a related embodiment, another flat field 6x reduction was implemented with a primary mirror having a diameter of 835 mm and other components as described above, this time scaled up to a field diameter of 26 mm.

In another related embodiment, bonding is performed by defining a 1D mask pattern on a curved substrate (i.e., on a surface of a substrate having a non-zero curvature value (and thus a finite radius of curvature); e.g., on a concave surface). Formed reticles utilize 2 or 3-mirror PO subsystems. The wavefront curvature of radiation incident on the reticle changes upon interaction with the reticle.

In general, the PO subsystem has a reference axis and is configured to receive EUV radiation transmitted through the IU from a reflective pattern source and initiate at the pattern source by using a beam of EUV radiation incident on the pattern source in response to Only two radiation beams of the pattern source form an optical image of a substantially 1D pattern of the pattern source on a plane optically conjugate to the pattern source with a reduction factor of N>1. In general, the PO subsystem is configured to reduce the contrast of the optical image in a spatial frequency independent manner.

Additional details and/or related specific examples of PO subsystems configured in accordance with the concepts of the present invention are disclosed in our prior applications. In some embodiments, the PO subsystem is designed to operatively tolerate a certain level of optical aberration. In other words, the PO subsystem may have residual optical aberrations which, if present, may include one or more of: curvature of field not exceeding 100 microns; spherical aberration not exceeding 0.1 wave, coma any of image aberration and astigmatism; and distortion not exceeding 20%. In some embodiments, the PO subsystem includes a first reflector and a second reflector, the first reflector has a first radius of curvature, the second reflector includes a second radius of curvature, the first radius of curvature and the second radius of curvature have Opposite sign. The PO subsystem may include a reflective system comprising a primary and secondary mirror system, at least one of which includes two reflective elements that are spatially distinct (e.g., spatially disconnected) from each other (as in our prior application case and described in detail in U.S. Provisional Application No. 62/487,245). A particular implementation of this PO subsystem will be understood from the schematic diagrams of Figures 13A, 13B in which elements of the IU (specifically, the relay reflector 126) are shown and where the main reflector of the PO subsystem ( denoted M1 ) and the auxiliary reflector of the PO subsystem (denoted M2 ) each comprise two reflective elements (M1-A, M1-B; and M2-A, M2 -B). Considering the symmetry of the 1D pattern on the pattern source 144, 144', the gap between the two reflective elements of the reflector of the PO subsystem is preferably configured along the direction of the 1D pattern (when the pattern is formed by a 1D diffraction grating In case, for example, the gap or split between elements M1-A and M1-B is substantially parallel to the lines of the 1D diffraction grating). In some embodiments, the constituent reflective elements of the PO subsystem reflector are symmetrical to each other about a plane containing the reference axis of the PO subsystem. In another embodiment, the reflective surface of at least one of the reflective elements from a pair of reflective elements forming a given reflector of the PO subsystem is defined as a surface that may be rotationally symmetric about a reference axis of the PO subsystem. part.

Elements of Pupil Construction

While the elements of pupil construction are detailed in our previous application, some criteria and parameters specific to a particular implementation are discussed here.

，對應於IU的光學擴展可以

評估。The construction and relative dimensions of the pupil of an embodiment of the invention are illustrated in Figures 4A, 4B based on the examples of parameters of PO and IU presented above. 16.5 mm wide regular rhomboid field at the wafer (i.e., a square field with a 16.5 mm long diagonal oriented at 45° to the X and Y axes) and assuming light from a source (114, 214-A; 214-B) The solid angle into which the radiation enters is

, the optical extension corresponding to IU can be

Evaluate.

With further reference to Figures 1 and 2A: it will be appreciated that embodiment 100 (with details from 200) is suitably configured to provide optical elements 118 (FE1-A, FE1-B), 160 (blind field diaphragm), 144 (reticle) and surfaces associated with wafer-stage 156A (e.g., the surface of wafer 156 supported by the wafer stage) are optically conjugate elements as understood in the art because One of the elements illuminated with light incident thereon is optically imaged to a point of the other of the elements via the optical system of embodiment 100 . Embodiments are configured to form images overlapping FE1 -A and FE1 -B at reticle element 144 . Embodiments 100, 200 are also configured such that light source 114 (214-A, 214-B), element 122 (FE2) and aperture stop (of the PO subsystem) are optically conjugated. It should be appreciated that FIG. 1B is a schematic diagram and the degree of divergence or convergence of a particular light beam after reflection from or transmission through a particular optical element of system 100 (the degree of which may vary depending on the particular detailed design of system 100) May not be exactly represented in the drawing. For disclosures of additional details of pupil construction, the reader is referred to our prior applications (the disclosures of each of which are incorporated herein by reference), and for details to U.S. Provisional Application Serial No. 62/487,245 No.

1D EUV A general schematic diagram of a relevant concrete instance of the system

Figure 5 schematically illustrates an embodiment 500 of a 1D EUV system in which the relay mirror 126 has been removed and a reticle 144' carrying a grating pattern (in a reticle holder , not shown) the surface of the substrate has a non-zero curvature and thus a non-zero optical power. When the reticle 144' is configured to operate in reflection, the reticle 144' images the FE2 reflector 122 into the entrance pupil of the PO subsystem. After transmission from the light source 114, the radiation beam 510 traverses very close to the reticle 144' (as shown) with the radiation beam diffracted by the reticle pattern towards the PO subsystem (as schematically shown using dashed line EE). ) or alternatively a field stop 160 ′ positioned very close to the wafer 156 . The approach distance separating the field stop 160' from the reticle (or wafer) is typically less than 3 mm, preferably less than 1 mm, more preferably less than 100 microns, and even more preferably less than 50 microns .

Blind Field Stop (Pattern Blind) Referring to Figures 8A, 8B, 8C, the blind field stop 160 of the system defines exposure fields 810, 820, 830 ( The optical apertures on the image surface 156 ), in particular cases—rhombic shape (shown as rhombus shape 810 in FIG. 8A ) or hexagonal shape (820 in FIG. 8B ). The intended exposure field (and thus the exposure field forming optical aperture) may be bounded by a concave polygon (830 of Figure 8C). Thus, for example, the perimeter of aperture 160 of embodiment 100 is generally bounded by a polygon. This configuration addresses the practical problem of providing effective spatial overlap between immediately adjacent exposure fields to create a uniform exposure area across the entire imaging surface/wafer 156 . In particular, as understood by those of ordinary skill in the art, the polygonal shape facilitates efficient geometric stitching of images from subsequently formed exposure fields. For example, the orientation of the example exposure field shown on substrate 156 in FIG. 8A is such that the diagonal of polygonal exposure field 810 is parallel to the x- and y-axes of the system. While aperture 160 is shown in FIG. 1B as operating in transmission, it should be understood that in related embodiments pattern blind 160 may be configured to reflect light within the boundaries of the polygonal perimeter of its optical aperture.

It should be appreciated that, depending on the particular type/shape of the polygonal exposure field, greater than two exposure passes across the image surface may be required to fully and cleanly expose the image surface without leaving any non-exposed patches. For this purpose, one advantage of having an exposure field shaped according to the specific example 830 (which would require 6 passes to complete the exposure cycle) is that this implementation would allow the overall system to be more tolerant to field dependent aberrations.

Additional details and/or specific examples are discussed in our prior applications and in detail in US Provisional Application Nos. 62/352,545 and 62/353,245.

The size of the gobo blind does not affect the exposure time and should be chosen to match the total optical extension of the illumination source. The wafer stage scan speed is inversely proportional to the width of the pattern blind aperture measured along the x-axis. In some cases, it may be preferable for a pattern-blind aperture to have a high aspect ratio shape (wide in X and very thin in Y) (eg, with an aspect ratio of 5 to 1 or higher).

The required optical output of the light source with which the 1D EUV system of the present invention may be equipped will understandably depend on the amount of radiant power necessary to properly expose the resist on the wafer and the economic yield.

EUV Source and Radiated Power Considerations

An example of a light source for use with the 1D EUV system of the present invention may be driven (laser pumped) by a plasmonic-based light source such as, for example, the lasers described in US 8,242,695 and/or US 8,525,138. At least a portion of the plasma light source) is provided. The disclosure of each of these patent documents is incorporated herein by reference. If necessary, the housing of the plasma source can be electrically grounded and/or reconfigured for varying the total optical power delivered through the source's window. As a heat source, this light source emits radiation in the UV spectral region, the visible spectral region and the IR spectral region.

While the total power emitted by this source in a solid angle of 4π steradians can be estimated to be about 10 W based on the power passing the source through its clear aperture, the applicable output from any source suitable for the particular example is only The output delivered to the aperture of the illuminator 200 . It is worth noting that the radiant power output from the light source required for proper operation of the overall 1D EUV system also depends on the performance rate of the system (measured, for example, in the number of wafers processed in an hour (wph)) . An example of a graph representing the estimated required radiation power output as a function of delivery rate in a 1D EUV system was built based on the following assumptions: a target delivery rate of 100 wph; double pass of each portion of ; a square exposure field (oriented at 45° to the x- and y-axes, measuring 16.5 mm along both diagonals, see 210 in FIG. 2B ); 5 per wafer seconds of overhead time (main wafer exchange and alignment metrology); total acceleration time of 5 seconds per wafer; 30 pulses minimum for each exposure zone; each at 65% reflectivity with Six reflective surfaces for 50% diffraction efficiency; and an additional "geometry factor" of a possible 50% loss of optical spread due to mismatch between illuminator and PO. In other words, the "geometry factor" is the fraction of the source output power directed into the PO entrance pupil. The graph shows the required power at the illuminator inlet, as well as the required pulse repetition rate and wafer stage acceleration for a given execution rate. Parts of this graph are shown in Figure 6 for a particular value of the assumed parameter and for three different values of the geometry factor. Table 1 additionally summarizes the results.

Table 1: Execution rate model results: exacutive rate Lighting power, W Repetition rate, kHz The average acceleration of the stage, g Scanning speed, mm/s 100 43 0.60 0.50 165 80 32 0.45 0.37 122 60 twenty three 0.31 0.26 86 40 14 0.19 0.16 54 20 7 0.09 0.08 25 10 3 0.04 0.04 12

，其中

為單個光源的光學擴展。It should be appreciated that depending on the particular choice of light source used with a particular example of a 1D EUV system, the optical extension of this source may be less than that of the IU. In this case, the system can be configured for use with multiple light sources (eg, 214-A and 214-B, as shown in FIG. 2A). The number of (otherwise identical) light sources required in this case can be estimated as

,in

Optical extension for a single light source.

Additional details and/or specific examples of EUV radiation sources properly configured for operation in the ID EUV systems of the present invention are discussed in our previous applications. An example of a light collection schematic for such an EUV source used with the optical system of a 1D EUV exposure tool is shown in Figures 9A, 9B, for example. Figure 9A illustrates the configuration of a laser-driven plasma light source with an ellipsoidal mirror for refocusing EUV radiation from the LPP to the IF, which in turn serves as the light source for an embodiment of the IU of the present invention. The 5 sr collector and 1.6 sr subaperture configurations are shown schematically for comparison. 9B is a schematic diagram illustrating a ray-based model of the LDP source of FIG. 9A having a central opening 910A, a tin injector 214 , and a collector 910 with an auxiliary light source IF 916 .

The specific model of the EUV source of Fig. 9A, Fig. 9B includes an aperture and an occlusion mask (formed by a combination of two circles and a rectangle) that set the boundaries of a Gaussian-shaped irradiance distribution of light proportional to the distance from the IF 916 .

The model further includes the following effects: i) three-dimensional (3D) distribution of plasma emission 918 ; (ii) ellipsoidal mirror aberration, obscuration and reflectivity variation; (iii) obscuration caused by tin injector 214 . The model of the source is further assumed to have: a) a 650 mm diameter ellipsoidal collector; b) a source with a NA bounded by a 5 sr solid angle; c) a 90 micron diameter at FWHM (or at 1/e2 level Plasma 918 radiation distribution of approximately Gaussian projection under approximately 910 micrometers). Results of simulated projections of this distribution with FRED® are presented in Figures 9C, 9D; d) IF 916 with NA of 0.25; e) 20% central disc obscuration 910A (about 130 mm diameter); and f) 15% linear obscuration (100 mm width) caused by tin injector 914. The reflectivity of the collector 910 was assumed to be about 50%, and the effective diameter of the IF 916 (to account for the instability of the laser driven plasma source) was assumed to be about 2 mm. The modeled spatial distribution of light generated by the plasma source and at the plane of the IF 916 can be obtained from Figures 10A, 10B illustrating the intensity distribution, ray points at the plane of the IF 916 shown in Figure 11A Schema and schema evaluation of ray directions at the same plane as shown in Figure 1 IB.

Lithographic Process Considerations Using Embodiments of the Invention

When the mask (reticle) 144 used in the embodiment of the 1D EUV system of the present invention is configured as a phase shift mask (PSM) to increase the contrast of the image formed at the substrate, it is different from using conventional 2D EUV The resulting characteristics of the printed image are improved compared to those characteristics achieved by the system.

Simulations of the proposed 1D EUV system were performed under the imaging simulation conditions outlined in Table 2. For comparison, relevant parameters of the prior art 2D EUV system are also listed. parameter Specific examples of 1D EUV tools 0.33- NA tool (2D EUV tool of prior art ) 0.55- NA tool (prior art 2D EUV tool ) feature 10nm lines on 20nm pitch mask type Chrome-Free PSM (Phase Shift Mask) binary binary illumination Central ellipse (Figure 2B, Figure 2C), σ=0.1 width by 0.4 length Dipole, 0.2σ wide on a 0.9σ circle Dipole, 0.2σ wide on a 0.6σ circle center block 30% (less than 40%) none 20% aberration from design none none Table 2: Imaging simulation conditions.

Table 3 shows the area image contrast of 1D gratings printed using specific examples of the proposed 1D EUV tool and a standard 2D EUV tool of the prior art at 0.33 NA and 0.55 NA. The 0.33 NA tool was not at all printable with a 20nm pitch grating, and imaging with the 0.55 NA tool resulted in lower contrast. For comparison, Figure 7A shows data output from a resist model via focusing at optimal dose for a specific example of the present invention and a standard high NA 2D EUV tool of the prior art. EUVD type, PSM 0.33-NA EUV. Binary 0.55-NA EUV. Binary 20nm pitch 88% — 47% Table 3: Maximum area image contrast achievable with different types of imaging.

Figures 7B, 7C additionally illustrate the dependence of the radiation dose (in mJ/ Dependence of the critical dimension (CD) of the printed pattern on the substrate as a function of defocus (in micrometers) and defocus (in micrometers). While embodiments of the invention may require higher irradiation doses, the embodiments show substantially less reduction in image quality: the degradation in CD for a given value of defocus in a 1D EUV system is substantially less than Deterioration in 2D EUV systems. For example, as understood from the comparison of curves A and B in FIG. 7B and FIG. 7C , a defocus of about 0.05 μm causes an increase in the CD of the 2D EUV system from about 11 nm to about 14.5 nm, and that of the 1D EUV system. There is only an increase from about 12.5 nm to about 13.5 nm. Those skilled in the art will readily appreciate the advantages of increased contrast achieved by using embodiments of the present invention.

The concept of a 1D EUV exposure tool has been outlined based on the example of the specific example described with reference to FIGS. 1 to 11 . While specific values chosen for this particular example are recited, it is to be understood that within the scope of the invention, the values of all parameters may be varied within wide ranges to suit different applications. For example, embodiments of the invention have been described that are not telecentric at the plane of the reticle and have a fixed reticle position during exposure. However, between exposure executions, or during exposure, the reticle can be moved slightly along the z-axis (if necessary) to induce a change in the magnification of the image and effectively allow the exposure tool of the present invention to expand/contract the imaged 1D pattern to Used to geometrically match patterns already printed on a substrate.

Embodiments have been described as including a control circuit/processor governed by instructions stored in memory. The memory may be random access memory (RAM), read only memory (ROM), flash memory, or any other memory suitable for storing control software or other instructions and data, or a combination thereof. Those skilled in the art should also easily understand that the instructions or programs defining the functions of the present invention can be in multiple forms (including but not limited to permanent storage in non-writable storage media (for example, read-only memory devices (such as ROM) in computers) , or by attaching information on readable devices (such as CD-ROM or DVD discs) via computer I/O, variably stored in writable storage media (such as floppy disks, removable flash drives) memory and hard drive), or information transmitted to a computer via a communication medium, including a wired or wireless computer network) to the processor. Additionally, while the invention may be embodied in software, the functions necessary to implement the invention may optionally or alternatively be implemented using firmware and/or hardware components (such as combinational logic, application specific integrated circuits (ASICs), field programmable gate array (FPGA) or other hardware or some combination of hardware, software and/or firmware components) in whole or in part.

Table 4 summarizes the advantageous operating parameters of one particular embodiment of the invention compared to those of some 2D EUV systems. feature 0.40-NA specific example of 1D EUV tools 0.33-NA 2D EUV tools 0.55-NA 2D EUV Tool mask phase shift binary mask size small 6 inches by 6 inches feature 1-D raster only multiple Lens magnification 6× 4× 4×/8× pitch range 20 - 30 nm ~25nm+ ~15nm+ feature orientation By rotating the wafer, V and H in two prints V and H at the same time alignment mark unprinted standard Printed screen size N/A; printed entire wafer 26 x 33mm Lens Field Width 16.5 mm 26 mm overlay Target ~2nm Advocating 5nm MMO Target 3nm MMO Projection Execution Rate 50 wph or greater 50 wph (assumed) 100 wph (assumed) Dose at execution rate About 30 mJ/cm2 30 mJ/cm2 (assumed) Mains power required at the entrance of the luminaire ~20W 80 W (assumed) 250 W (assumed) source type Plasma discharge, Xe or Sn CO2 laser drives LPP wafer size 300mm 300mm Mask stage fixed scanning Table 4

Based on the combination of this disclosure and the disclosure of our previous application, those skilled in the art will readily appreciate the various specific examples of 1D EUV systems discussed that are dedicated to printing arrays of straight parallel lines on a selected workpiece. Such specific examples include, but are not limited to:

- A specific example of an (EUV) exposure tool comprising: an IU; a reflector (containing a pattern source on which a substantially 1D pattern is carried; this reflector is positioned to receive an incident beam of EUV radiation from the IU); a PO A system having a reference axis and configured to receive radiation from an incident beam transmitted from a reflector. In one specific example, the reflector includes a phase shift mask. The PO subsystem is also configured to apply a reduction factor of N > 1 by using only two radiation beams originating at the reflector from the incident beam to form a 1D pattern on a plane optically conjugate to the reflector. optical image. Essentially, the 1D pattern has a first spatial frequency, and its optical image has a second spatial frequency, and the second spatial frequency is at least twice the first spatial frequency. The reflectors are arranged in a substantially fixed spatial and optical relationship relative to the IU and PO subsystems. The only two radiation beams forming the optical image do not include the radiation beam representing the specular reflection of the incident beam at the reflector. The exposure tool may further include a workpiece configured to be movable transverse to the reference axis. In certain instances, the IU includes first and second fly's eye (FE) reflectors. Additionally or in the alternative, reflectors may be disposed between individual constituent reflective elements of the first FE reflector. In general, the PO subsystem includes first and second reflectors (the first reflector has a first radius of curvature, the second reflector includes a second radius of curvature, the first and second radii of curvature have opposite signs). In one implementation, the PO subsystem is a reflective system comprising a primary and secondary mirror system, at least one of which includes two reflective elements that are spatially distinct from each other.

- Relevant specific examples of 1D EUV exposure tools, which include: IU (with first and second fly-eye reflectors as constituent reflectors of IU); PO subsystem in optical communication with IU; reflective pattern source, with Disposed in substantially fixed spatial and optical relationship with respect to the IU and PO subsystems and carrying thereon a substantially 1D pattern (pattern source configured to receive a radiation beam from the IU and transmit radiation from this radiation beam to PO subsystem); and a workpiece movable laterally relative to the reference axis of the PO subsystem. The IU may further include a relay mirror disposed in optical communication with both the second fly's eye reflector and the reflective pattern source. In a particular implementation, the 1D EUV exposure tool additionally includes a field stop disposed between the second fly's eye reflector and the relay mirror. The field stop generally defines an optical aperture having a polygonal perimeter. Additionally or in the alternative, the 1D EUV exposure tool is configured such that the first fly's eye reflector, the field stop, the pattern source, and the surface associated with the workpiece are optically conjugate to each other. In general, a PO subsystem includes a first mirror and a second mirror, at least one of which has a central obscuration. These first and second mirrors are configured to collectively define an astigmatic optical system. In certain cases, the PO subsystem further includes a third mirror. In a specific implementation, the PO subsystem has only two reflectors. In a related implementation, the PO subsystem has only three reflectors. The exposure tool can be configured such that EUV radiation from the radiation beam passes through the IU by using no more than ten reflectors, where these ten reflectors include the first and second fly-eye reflectors and the reflector of the PO subsystem. and the PO subsystem are delivered toward the workpiece along the reference axis. The pattern source of the tool is generally equipped with a pattern source support that is free of structures configured to scan the pattern source in synchronization with the motion of the workpiece during operation of the exposure tool. In a particular implementation, the surface of the pattern source carrying the 1D pattern may have a non-zero radius of curvature to define a non-zero optical power of the pattern source. In this case, the surface of the pattern source has a first finite radius of curvature defined in a first plane transverse to the surface and containing the pattern source axis perpendicular to the surface. Additionally, the surface of the pattern source may have a second finite radius of curvature defined in a second plane transverse to the first plane and containing the axis of the pattern source. The first and second finite radii of curvature may be substantially equal to each other. The 1D EUV exposure tool may additionally include a radiation source configured to emit radiation at EUV wavelengths and positioned to be optically conjugate to the second fly's eye reflector and the entrance pupil of the PO subsystem. In one instance, the radiation source contains plasmonic-actuated light emitters. The 1D EUV exposure tool may be further equipped with a control unit (configured in operable communication with the workpiece) containing a processor programmed to perform: (i) along the first axis (via the PO subsystem using radiation delivered from a reflective pattern source relative to the position of an exposure field formed in a plane close to the surface of the workpiece) and scanning the workpiece along this first scan trajectory to form stripes of parallel lines extending along a first axis and (ii) adjusting the first scan trajectory to predeterminedly overlay the strip onto a portion of the pre-existing pattern when the pre-existing pattern has been associated with the workpiece prior to the scan in question. In certain cases, the processor is programmed to adjust the first scan trajectory during the process of scanning the workpiece to include at least one of (a) moving along the second axis and (ii) moving along the third axis, the second The axis is perpendicular to the first axis, and the third axis is perpendicular to both the first axis and the second axis. The control unit can further be operatively cooperating with at least one of the IU and PO subsystems, and the processor can be further programmed to adjust the spacing of the strips of parallel lines to deform the strips.

- Specific examples of methods for delivering radiation via 1D EUV exposure tools. The method comprises the step of delivering first EUV radiation (received by a first reflector of an IU of the EUV exposure tool) to a reflective pattern source of a ID EUV exposure tool, the pattern source being substantially fixed in space relative to the first reflector of the IU in relationship. The method comprises a second step of further transmitting first EUV radiation (that has interacted with the reflective pattern source) across the surface comprising the reflective surface of the first mirror. For example, such transmitting may include transmitting the first EUV radiation through a central aperture or central obscuration of the first mirror. In one instance, transmitting the first EUV radiation through the central obscuration may comprise transmitting the first EUV radiation through a central aperture having a surface area no greater than 40% of the area of the reflective surface of the first mirror. The act of transmitting may comprise impinging a first beam of first EUV radiation onto a first location at a surface of a first mirror and impinging a second beam of the first EUV radiation onto a second location at a surface of the same first mirror , the first position and the second position are defined on opposite sides of the first mirror with respect to the reference axis. Alternatively or additionally, the method further comprises (a) reflecting the first radiation from a surface of the pattern source carrying thereon a substantially one-dimensional (1D) pattern and/or (b) which further comprises applying a reduction factor of N>1 An optical image of a substantially 1D pattern is formed on a target surface optically conjugate to the reflective pattern source. The step of forming the optical image comprises forming the optical image using only two radiation beams originating at the reflective pattern source as a result of the transferring step, and these only two radiation beams do not include the first EUV radiation representing the first EUV radiation at the reflective pattern source. beam of specular reflection. The method may additionally comprise the step of forming an optical image, wherein the separation distance between two immediately adjacent linear elements of the image does not exceed 10 nm; and preferably does not exceed 7 nm. In one implementation, the method further includes the step of altering the curvature of the wavefront of the first EUV radiation after the radiation interacts with the reflective pattern source. The method may further comprise (i) transmitting the first EUV radiation through a second mirror and partially reflecting the first radiation at a surface of the second mirror on a side of the second mirror relative to the optical axis of the second mirror. In this case, the steps of further transmitting and transmitting the first radiation through the second mirror collectively define transmitting the radiation through an anastigmatic mirror system having a numerical aperture of at least 0.2.

For the purposes of this disclosure and the appended claims, the use of the terms "substantially", "approximately", "about" and similar terms with respect to a value, element, property or characteristic near the descriptor is intended to emphasize the reference The value, element, property or characteristic of , although not necessarily stated precisely, is, for practical purposes, deemed to be as stated by a person skilled in the art. These terms (as applied to a given characteristic or quality descriptor) mean "mostly", "mainly", "notably", "substantially", "substantially", "to a large extent", " Substantially but not necessarily exactly the same" in order to properly represent the approximate language and describe the specified characteristics or descriptors such that the scope thereof will be understood by those of ordinary skill in the art. In a particular instance, the terms "approximately", "substantially" and "about" when used in reference to a numerical value denote a range of plus or minus 20%, more preferably plus or minus 10%, even more preferably plus or minus 20% relative to the specified value. Or minus 5%, preferably plus or minus 2% relative to the specified value. As a non-limiting example, two values that are "substantially equal" to each other mean that the difference between the two values may be within +/- 20% of the value itself, preferably within +/- 10% of the value itself More preferably within +/- 5% of the value itself, and even better within +/- 2% or less of the value itself.

The use of these terms in describing selected properties or concepts is neither intended nor provided with any basis for uncertainty and for adding numerical limitations to specified properties or descriptors. As understood by those skilled in the art, when using measurement methods accepted in the art for such purposes, practical deviations from the exact value or characteristics of the value, element or property stated therein are attributed to the typical The numerical range defined by experimental measurement error and can vary within the numerical range defined by typical experimental measurement error.

For example, a reference to an identified vector or line or plane that is substantially parallel to a referenced line or plane would be considered such a vector or line or plane to be the same as, or very close to, the referenced line or plane ( Wherein the angular deviation from the referenced line or plane is regarded as a practical typical value in the prior art, for example, between zero degrees and fifteen degrees, preferably between zero degrees and ten degrees, more preferably between zero degrees and five degrees degrees, even better between zero degrees and 2 degrees, and optimally between zero degrees and 1 degree). For example, a reference to an identified vector or line or plane that is substantially perpendicular to a reference line or plane would be considered such a vector or line or plane whose surface normal is at or very close to the reference line or plane. plane (where the angular deviation from the referenced line or plane is considered to be a practically typical value in the prior art, for example, between zero and fifteen degrees, preferably between zero and ten degrees, more preferably between zero and and 5 degrees, even better between zero and 2 degrees, and optimally between zero and 1 degree). The term "substantially rigid" when used in relation to a housing or structural element providing mechanical support for the novel invention in question generally identifies a structural element having a stiffness higher than that of the novel invention supported by such structural element. As another example, the use of the term "substantially flat" in relation to a given surface means that this surface may possess unevenness and/or that are sized and expressed as generally understood by those skilled in the art in the particular situation at hand. or degree of roughness.

Other specific examples of the meaning of the terms "substantially", "about" and/or "approximately" as they apply to various practical situations may be provided elsewhere in this disclosure.

Embodiments of the system of the present invention include electronic circuitry (eg, a computer processor) controlled by instructions stored in memory to perform certain data collection/processing and calculation steps as disclosed above. The memory may be random access memory (RAM), read only memory (ROM), flash memory, or any other memory suitable for storing control software or other instructions and data, or a combination thereof. Those skilled in the art will readily appreciate that the instructions or programs defining the operation of the present invention may be permanently stored in many forms, including but not limited to, on a non-writable storage medium (e.g., a read-only memory device (such as a ROM) in a computer. , or by attaching information on readable devices (such as CD-ROM or DVD discs) via computer I/O, variably stored in writable storage media (such as floppy disks, removable flash drives) memory and hard drive), or information transmitted to a computer via a communication medium, including a wired or wireless computer network) to the processor. Additionally, while the invention may be embodied in software, the functions necessary to implement the invention may optionally or alternatively be implemented using firmware and/or hardware components (such as combinational logic, application specific integrated circuits (ASICs), field programmable gate array (FPGA) or other hardware or some combination of hardware, software and/or firmware components) in whole or in part.

The invention as described in the claims accompanying this disclosure is intended to be evaluated in light of this disclosure as a whole. Various changes in details, steps, and components that have been described may be made by those skilled in the art within the principle and scope of the invention.

For example, referring to FIG. 12 , there is shown a schematic diagram illustrating a portion of the optical system (of the 1D EUV exposure tool of the present invention) slightly modified from the specific example of FIG. 5 . (Note that for simplicity of illustration, this schematic diagram of FIG. 12 is presented without regard to scale, shape or accuracy of mutual orientation and/or positioning of depicted components). Here, as in the embodiment 500 of FIG. 5 , a pattern source 144' carrying a substantially 1D pattern that is optically imaged via the PO subsystem 134, 130 onto an image surface typically associated with the workpiece 156 The surface of is curved in space. However, in contrast to the specific example 500, the patterned source 144' utilizes EUV radiation (shown as arrow 1210) arriving from the auxiliary source 916 of the optical IF (formed as a result of operation of the EUV source of the system, as discussed above) in the available Orientation in irradiation is referred to as off-axis orientation. In particular, the general direction of propagation 1210 incident on the patterned source EUV radiation forms an oblique non-zero incidence angle relative to a normal 1220 defining an axis perpendicular to the surface of the curved patterned source 144'. In certain cases, the angle of incidence of the EUV radiation 1210 onto the patterned source 144' is selected to ensure, for example, that the projection of the average wavevector of the radiation 1210 onto the surface of the patterned source 144' is substantially parallel to that of the substantially 1D pattern. The axis along which the line expands. For example, in the case when the substantially 1D pattern of the pattern source is formed by a 1D diffraction grating, the plane of incidence of the radiation 1210 onto the pattern source 144' is substantially parallel to the grating lines and a reference axis such as the normal 1220 ). As shown in the view of FIG. 12 , the lines of the substantially 1D pattern of the pattern source 144 ′ extend along the y-axis.

Referring again to FIG. 1B , for example, it will be appreciated that off-axis illumination of a similar configuration of a pattern source can be employed in an optical system (of a 1D EUV exposure tool) employing a substantially planar or planar pattern source 144, and/or in employing Following reflector 126 is employed in the optical system. It should also be appreciated that off-axis illumination of a patterned source (whether flat or curved, as described above) can generally be performed with beams of EUB radiation characterized by different degrees of collimation. For example, off-axis illumination of the patterned source can be configured using a substantially collimated EUV radiation beam arriving from the IU; in another non-limiting example, this EUV radiation beam can be spatially focused towards the patterned source.

Therefore, the scope of the invention includes this mutual orientation of the IU and the pattern source within the optical system of a 1D EUV exposure tool, the last optical element of the IU, which is the FE reflector or the relay reflector, employs the optical system of the 1D EUV exposure tool. The system reflects EUV radiation towards the pattern source along an axis whose projection onto the pattern-bearing surface of the pattern source is parallel to the longitudinal extent of the elements of the substantially 1D pattern.

The choice of off-axis illumination configuration can be beneficial to reduce the loss of imaging contrast across the FOV, and in some cases to reduce or avoid phase effects that would otherwise need to be compensated by changing the structure of the light source or the structure of the pattern source itself. (The effect on the propagation of radiation from the pattern source through the PO subsystem and further towards the image surface). Considering the fact that, in general, acceptable variations in at least the structure of patterned sources used with embodiments of the invention are limited, the implementation of off-axis illumination of patterned sources may prove to be practically advantageous. Due to the substantially 1D nature of the patterns of the pattern sources 144, 144' and the fact that the system is configured to ensure that the optical components do not interfere with the propagation of the +1 and -1 order diffractions through the PO subsystem (as in our prior application The fact that zero order diffraction from incident radiation 1210 at the patterned source is substantially blocked while the zero order diffraction from incident radiation 1210 is substantially blocked, the requirement for a particular angle of incidence is somewhat relaxed in embodiments of the present invention. 12, for example, in one embodiment, the angle at which radiation arriving from the IU is incident on the pattern source is in the range of about zero degrees to about 40 degrees; in a related embodiment, about 10 degrees to about within 30 degrees. It should be understood that these ranges provide examples of angular ranges only. In practical embodiments, the angle or range of angles of incidence from 0 to substantially 90 degrees may be used anywhere.

Disclosed aspects, or portions of such aspects, may be combined in ways not listed above. Accordingly, the invention should not be seen as limited to the particular examples disclosed.

114: light source 118: The first reflector 122: Second reflector 126: Relay reflector 130: first shot 130A: Center Obstruction 134: second mirror 134A: Center Obstruction 140: Radiation 144:Pattern source 144': pattern source 148: Radiation 152A: Beam 152B: Beam 156: Wafer 156A: Wafer stage 160: Aperture 160': field diaphragm 164: pupil diaphragm/aperture 200: illuminator 210: reflector 210-i: Individual reflectors 210-j: individual reflectors 214-A: Radiation source 214-B: Radiation source 220: reflector 220-i: Individual reflectors 220-j: individual reflectors 300: Astigmatism-eliminated projection optics two-mirror system 310: main mirror 320: main mirror 320: Mirror 510:Radiation Beam 810: Rhombus shape exposure field 820: Hexagonal shape exposure field 830:Concave polygon exposure field 910: Collector 910A: center opening 914: Tin Injector 916: Auxiliary light source IF 918: Plasma 1210: arrow 1220: Normal M1: Main reflector of PO subsystem M1-A: reflective element M1-B: reflective element M2: Auxiliary reflector for PO subsystem M2-A: reflective element M2-B: reflective element

A more complete understanding of the invention can be obtained by reference to the following detailed description taken in conjunction with the drawings, which are not generally to scale, in which: [ FIG. 1A ] and [ FIG. 1B ] provide generalized schematic diagrams of specific examples of the present invention. [FIG. 2A] A schematic diagram illustrating a specific example of a lighting unit configured according to the idea of the present invention in a side view; [FIG. 2B, FIG. 2C] A schematic diagram showing the reflector of the specific example of FIG. 2A in a front view; [FIG. 2D] illustrates a first-order layout of the embodiment of FIG. 2A, wherein the reflector is replaced by an equivalent lens; [FIG. 3A] shows a specific example of projection optics design; [FIG. 3B] Listing the Rennicke parameters for the design of the projection optics (PO) of FIG. 3A; [Fig. 4A, Fig. 4B] illustrate the determination and related system of pupil parameters used in a specific example of the present invention; [ FIG. 5 ] presents an alternative embodiment of the system of the present invention; [FIG. 6] shows a graph representing the required radiation-power output from a light source used with a specific example of the system of the present invention under specified conditions; [ FIG. 7A ] Provides data output from a resist model by focusing at optimal dose for a standard high NA 2D EUV tool of the present invention and prior art; [FIG. 7B, FIG. 7C] provide a comparison of critical dimension of pattern features formed by photolithography using systems employed in the prior art and systems configured in accordance with embodiments of the present invention; [ FIG. 8A , FIG. 8B ] and [ FIG. 8C ] illustrate examples of the shape of the exposure field formed at the image surface by the system of the present invention. Each area of the image surface is finally scanned twice (along the arrows as shown); [ FIG. 9A ] Illustrates the light collection system of a laser-driven plasma light source with an ellipsoidal mirror for refocusing EUV radiation from LPP to the IF (IF in turn serving as the light source for a specific example of the IU of the present invention) configuration. For comparison, a 5 sr collector and a 1.6 sr subaperture configuration are schematically shown; [ FIG. 9B ] is a ray model-based schematic illustrating the LAP source of FIG. 9A with a central opening 910A, a tin injector 914 and a collector 910 with an auxiliary light source IF 916; [FIG. 9C, FIG. 9D] illustrating the assumed substantially Gaussian distribution of the plasma of the laser-driven plasma source according to the model used for the calculations; [FIG. 10A, FIG. 10B] illustrate the angular distribution of the radiation of a laser-driven plasma source model as viewed down the optical axis and the radiation of the same source in an identified cross-sectional plane transverse to the optical axis, respectively. Angular distribution; [Fig. 11A, Fig. 11B] respectively illustrate the rays generated by the modeled laser driving the plasma source and the direction cosines of these rays at the plane where the auxiliary light source passes through the convergent point of the rays reflected by the collector of the plasma source Distribution; [FIG. 12] Schematically illustrating a part of an optical element string of an alternative embodiment of a 1D EUV exposure tool according to the present inventive concept; [ FIG. 13A ] A perspective view schematically illustrating a specific implementation of an embodiment of a PO subsystem in which at least one of the primary and secondary reflectors is configured to include multiple reflective elements that are spatially distinct from each other; [ FIG. 13B ] is a schematic diagram supplementing the diagram of FIG. 13A by depicting the symmetry of the configuration of the multi-reflective element reflectors of the PO subsystem with respect to the direction of extension of the elements of the 1D pattern of the pattern source. The size and relative proportions of elements in the drawings may be set to be different from the actual size and proportions in order to facilitate simplicity, clarity and understanding of the drawings as appropriate. For the same reason, not all elements present in one drawing may necessarily be shown and/or labeled in another drawing.

114: light source

118: The first reflector

122: Second reflector

126: Relay reflector

130: first shot

130A: Center Obstruction

134: second mirror

134A: Center Obstruction

140: Radiation

144:Pattern source

148: Radiation

152A: Beam

152B: Beam

156: Wafer

156A: Wafer stage

160: Aperture

164: pupil diaphragm/aperture

Claims (12)

An exposure device comprising: an illumination system comprising reflectors that reflect light from the light source towards the pattern source; and A projection system, incident the plural diffracted lights diffracted by the aforementioned light from the aforementioned mirror at the aforementioned pattern source, projecting the incident aforementioned plural diffracted lights to the workpiece; The aforementioned reflection mirror of the aforementioned illumination system is located between the light paths of the aforementioned plurality of diffracted lights from the aforementioned pattern source. The exposure device as described in claim 1, which further has: a workpiece stage holding the aforementioned workpiece movable; The aforementioned workpiece moves relative to a light pattern formed by a plurality of diffracted lights from the aforementioned projection system. The exposure device according to claim 2, wherein, The aforementioned light patterns are essentially one-dimensional patterns. The exposure device according to claim 3, wherein, The distance direction between the aforementioned one-dimensional patterns is substantially perpendicular to the moving direction of the aforementioned workpiece. The exposure device according to claim 2, wherein, The light pattern is optically conjugated to the pattern source with respect to the projection system. The exposure device according to claim 2, wherein, The aforementioned reflector of the aforementioned lighting system includes: a first fly's eye reflector configured to concentrate light from the aforementioned light source; and a second fly's eye reflector configured to receive said light from said first fly's eye reflector; The second fly's-eye reflector is located between the light paths of the plurality of diffracted lights from the pattern source. The exposure device according to claim 6, wherein, A first dimension of the second fly's eye reflector in a direction in which the workpiece moves is different from a second dimension of the second fly's eye reflector in a direction intersecting the moving direction. The exposure device according to claim 7, wherein, The second size is larger than the first size. The exposure device according to claim 6, wherein, The lighting system further includes a relay reflector that reflects the light reflected by the second fly's eye reflector toward the pattern source. The exposure device according to claim 3, wherein, The reflection mirror of the illumination system has a first dimension in a direction intersecting the pitch direction of the one-dimensional pattern and the second dimension of the reflection mirror in the illumination system in the pitch direction is different. The exposure device according to claim 10, wherein, The second size is larger than the first size. A component manufacturing method for manufacturing components, comprising: Using the exposure device as described in any one of Claims 1 to 11, to form the pattern of the photosensitive layer on the aforementioned workpiece; and The aforementioned workpiece formed with the aforementioned pattern is processed.

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