TWI782100B - Through-electrode substrate and semiconductor device using through-electrode substrate - Google Patents

Abstract

A through-electrode substrate, comprising: a substrate made of an inorganic material; a first wiring provided on the substrate; a through hole provided in the substrate at a position separated from the first wiring; and a through hole provided on the inner wall of the through hole a through-electrode; and a second wiring connecting the first wiring and the through-electrode. According to the present invention, it is possible to provide a through-electrode substrate and a method of manufacturing the same. The through-electrode substrate is a through-electrode substrate with a high aspect ratio of a glass substrate, which can ensure conduction between the through-electrode and wiring on the substrate, and the electrical connection between the through-electrode substrate and the substrate. Reliability is improved.

Description

Through-electrode substrate and semiconductor device using through-electrode substrate

The invention relates to a through-electrode substrate. In particular, it relates to a through-electrode substrate having cross-linked wiring for cross-linking the through-electrode and the wiring on the substrate.

In recent years, with the downsizing and speeding up of electronic equipment such as smartphones and notebook computers, the density and speed of semiconductor components constituting electronic equipment or wiring boards on which semiconductor components are mounted are also increasing.

In a multilayer wiring board in which a plurality of wiring boards are laminated, a through-electrode board on which a through-electrode penetrating the wiring board is formed is used in order to connect upper and lower wirings. As a method of forming such a through-hole electrode, when the base material is an organic substrate, in order to form the wiring in the through-hole to achieve conduction, by performing electroless copper plating, the wiring formed on the substrate and the wiring formed on the substrate can be obtained. Conduction of the through-electrode in the through-hole.

In Patent Document 1, a printed wiring substrate is disclosed. The printed wiring substrate has a via hole. The via hole is formed by forming a hole with a bottom on the substrate, and then forming a conductive layer in the hole with the bottom. The substrate is glass epoxy. [Prior Art Literature] [Patent Document]

Patent Document 1: Japanese Patent Laid-Open No. 2008-205070

[Problem to be Solved by the Invention]

However, when the base material is a substrate made of inorganic materials such as glass, silicon, or ceramics, it is difficult to roughen the inner walls of the through holes in the same way, and an adhesive layer must be formed in advance to form electroless copper plating. Moreover, when performing electroless copper plating after forming an adhesive layer, copper plating will be formed only in the part in which the adhesive layer was formed. In this case, if electroless copper plating is used to connect the wiring on the substrate and the through-electrode in the through-hole, the wiring and the through-electrode will be connected through the insulating adhesive layer, so there will be problems in electrical reliability.

In view of the above-mentioned problems, one object of the present invention is to provide a through-electrode substrate and a method of manufacturing the same. The conduction between the electrodes and the wiring on the substrate improves the electrical reliability. [Means to solve the problem]

A through-electrode substrate according to an embodiment of the present invention has: Substrates made of inorganic materials; The first wiring provided on the aforementioned substrate; A through hole provided in the aforementioned substrate at a position separated from the aforementioned first wiring; a through-electrode provided on the inner wall of the aforementioned through-hole; and The first wiring and the second wiring of the penetrating electrode are connected.

The through-electrode substrate according to an embodiment of the present invention may further include an adhesive layer provided between the substrate and the through-electrodes.

In the through-electrode substrate according to one embodiment of the present invention, the second wiring may further be in contact with the adhesive layer.

In the through-electrode substrate according to one embodiment of the present invention, the adhesion layer may contain an organic resin material.

The through-electrode substrate according to an embodiment of the present invention may further include: an insulating layer provided on the first wiring, the second wiring, and the through-electrode; a third wiring provided on the aforementioned insulating layer; and A fourth wiring in contact with the insulating layer, the third wiring, and the through-electrode.

In the through-electrode substrate according to an embodiment of the present invention, the insulating layer may be made of an organic resin material, and the through-electrode may be provided on the inner wall of the through-hole and inside the opening of the insulating layer.

In the through-electrode substrate according to an embodiment of the present invention, the above-mentioned through-electrode may also contain: a first through electrode provided on the inner wall of the through hole; and The second penetrating electrode provided inside the opening provided in the insulating layer.

In the through-electrode substrate according to an embodiment of the present invention, the aspect ratio of the through-holes may be 3 or more. [Effect of Invention]

According to the present invention, it is possible to provide a through-electrode substrate and a manufacturing method thereof. The through-electrode substrate is a through-electrode substrate with a high aspect ratio using a glass substrate, which ensures conduction between the through-electrodes and wiring on the substrate, and improves electrical reliability. .

Hereinafter, various embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in various forms within a range not departing from the gist thereof, and should not be construed as limited to the descriptions of the following exemplary embodiments.

In order to clarify the description, the drawings sometimes schematically show the width, thickness, shape, etc. of each part compared with the actual form, but these are just examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those described in the already disclosed figures may be assigned the same symbols and redundant descriptions will be omitted.

In this specification and the scope of the patent application, when expressing the aspect of disposing another structure on a certain structure, when it is only described as "on", unless otherwise specified, it includes " There are two cases of placing another structure directly above a certain structure in such a way as to be in contact with a certain structure" and "the case of further placing another structure above a certain structure through a different structure". Also, in this specification and the scope of the patent application, "U" and its arrow indicate up or above in section, while "D" and its arrow indicate down or below in section.

In this specification and the scope of the patent application, the expression that a certain structure "overlaps" another structure means that at least a part of them overlaps when these structures are viewed from above. In other words, it means that when any one of these structures is positioned above or below the other, and these structures are viewed from above or below, at least a part of them overlaps with each other.

The configuration of the through-electrode substrate 100 and the manufacturing method of the through-electrode substrate 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 6 .

[Structure of semiconductor device] FIG. 1 shows a plan view showing an example of a semiconductor device 1000 having a through-electrode substrate 100 which is one embodiment of the present invention. The semiconductor device 1000 has a printed circuit board 200 , a through-electrode substrate 100 , an integrated circuit 300 , bumps 122 , and a wiring layer 120 .

Multiple integrated circuits 300 can also be disposed on the wiring layer 120 , and multiple integrated circuits 300 can also be electrically connected to each other through the wiring layer 120 . Furthermore, each integrated circuit 300 is electrically connected to the through-electrode substrate 100 through conductors such as the wiring layer 120 and the bump 122 . The through electrode substrate 100 is electrically connected to the printed circuit board 200 through the through electrode 108 described later.

In FIG. 1 , although an example in which one integrated circuit 300 electrically connected to the wiring layer 120 is mounted on the through-electrode substrate 100 is shown, it is not limited to the example shown here. The number of terminals of the integrated circuit 300 may be four, five or more, or less than four. In addition, the number of integrated circuits 300 mounted on the through-electrode substrate 100 may be plural or one. Furthermore, the integrated circuit 300 mounted on the through-electrode substrate 100 may also be composed of a plurality of integrated circuits with different numbers of terminals. It can be appropriately selected according to the application of the semiconductor device 1000 . In addition, in FIG. 1 , although an example in which the through-electrode substrate 100 is mounted on the printed circuit board 200 is disclosed, it is not limited to this example. The through-electrode substrate 100 can be constructed, for example, on a glass substrate, or on a flexible material such as FPC. It can be appropriately selected according to the application of the semiconductor device.

[Structure of wiring board 1] An example of a through-electrode substrate according to an embodiment of the present invention is shown in FIG. 2 . FIG. 2(A) is a plan view of a through-electrode substrate according to an embodiment of the present invention. Fig. 2(B) is a sectional view of the section line shown in Fig. 2(A).

FIG. 2 shows a partial plan view and a partial cross-sectional view of the through-electrode substrate 100 shown in FIG. 1 . The through electrode substrate 100 has a glass substrate 102 and a through electrode 108 provided on the inner wall of the through hole 10. The glass substrate 102 has a first surface 102a, a second surface 102b, and a through hole penetrating the first surface 102a and the second surface 102b. 10. In addition, in FIG. 2, although a part is omitted, a multilayer wiring layer such as the wiring layer 120 shown in FIG. 1 may be provided on the first surface 102a. The first wiring 104 shown in FIG. 2 constitutes a part of the wiring layer 120 shown in FIG. 1 .

The wiring layer 120 and the bump 122 are electrically connected to the through electrode 108 . The through electrodes 108 are electrically connected to the bumps 122 . The integrated circuit 300 is electrically connected to the wiring layer 120 through the bump 122 . The through-electrode substrate 100 is electrically connected to the printed substrate 200 through the bumps 122 . In addition, the relationship between the first surface 102 a and the second surface 102 b is up and down, or front and back, with respect to the through-electrode substrate 100 .

As shown in FIG. 2 , the through-electrode substrate 100 has a "glass substrate 102", "a through-hole 10 penetrating from the first surface 102a of the glass substrate 102 to the second surface 102b", and "a hole 10 formed on the first surface 102a of the glass substrate 102". On the first surface 102a of the glass substrate 102, there are electrically connected through electrodes 108. The second wiring 110 connected to the first wiring 104 .

In this embodiment, although an example of using a glass substrate 102 made of a glass material as a substrate is disclosed, the present invention is not limited thereto, and a silicon substrate made of a material containing silicon or a material containing alumina may also be used. ceramic substrate.

The glass substrate 102 has a first surface 102a and a second surface 102b as two main surfaces, and the first wiring 104 is formed on at least the first surface 102a. The first wiring 104 may be, for example, what constitutes a TFT (thin film transistor, thin film transistor).

In this embodiment, although the first wiring 104 is only formed on the first surface 102a, the present invention is not limited thereto, and wiring may be formed on both surfaces of the first surface 102a and the second surface 102b of the glass substrate 102. . The material of the first wiring 104 can be copper etc., for example.

The thickness of the glass substrate 102 may be, for example, about 200 μm to 900 μm.

On the sidewall of the through-hole 10 of the glass substrate 102, an "adhesive layer 106" and a "through electrode 108 formed on the adhesive layer 106" are formed. The adhesion layer 106 functions as a base for forming the material of the through electrode 108 on the glass substrate 102 by electroless plating. The adhesive layer 106 can be formed of a material containing organic resin. The material containing organic resin constituting the adhesive layer 106 can be, for example, epoxy resin, acrylic resin, polyimide resin, urethane resin, and the like. By forming the adhesion layer 106, compared with the glass surface, more functional groups with excellent catalyst adsorption can be introduced, and electroless plating of copper or nickel with good adhesion can be formed into a film.

The penetrating electrode 108 is formed on a portion of the surface of the glass substrate 102 where the adhesive layer 106 is formed. Penetrating electrode 108 is formed to obtain conduction between the upper and lower sides of glass substrate 102 , so it is formed to cover the entire side wall of through hole 10 of glass substrate 102 , and is formed in a hollow cylindrical shape along the inner wall of through hole 10 . The hollow portion of the through electrode 108 is sometimes referred to as a through hole (through hole) 130 . In addition, in order to electrically connect the through-hole electrodes 108 to upper and lower wirings, lands (land) 108-1 (larger in diameter than the through-holes) may be provided on the periphery of the through-holes 130 on the first surface 102 a or the second surface 102 b of the glass substrate 102 . The "receiving (landing) part). The material of the through-electrode 108 can be copper or nickel, for example.

As shown in FIG. 2 , the through hole 10 and the through hole 130 may be concentric circles with the same central axis. The diameter of the through hole 10 may be, for example, about 40 μm to 140 μm, and the diameter of the through hole 130 may be, for example, about 30 μm to 135 μm. In the wiring board shown in FIG. 2 , the diameter of the through hole 10 is larger than the diameter of the through hole 130 .

Although the hollow through-hole 130 is shown in FIG. 2 , the inside of the through-hole 130 may be filled with the same plating as that of the through-electrode 108 , and may also be filled with an organic resin or a metal different from the through-electrode 108 .

On the first surface 102 a of the glass substrate 102 , the second wiring 110 in contact with the glass substrate 102 , the first wiring 104 , and the penetrating electrode 108 is formed. The second wiring 110 has a function as a crosslinking wiring that electrically connects the first wiring 104 and the land 108 - 1 of the penetrating electrode 108 on the first surface 102 a. The material of the second wiring 110 may be any material as long as it is a conductive material such as copper, nickel, or tin.

The second wiring 110 may be a single layer as shown in FIG. 2 , but the present invention is not limited thereto. For example, when the material of the second wiring 110 is copper, the following multilayer structure can also be used: In order to improve the adhesion between the copper and the glass substrate 102, one or more layers of Ti are included between the copper and the glass substrate 102. Adhesive layer composed of metal film with low resistance.

10 is a cross-sectional view of a through-electrode substrate according to an embodiment of the present invention. The second wiring 110' shown in FIG. 10 has a two-layer structure. The two-layer structure is an adhesive layer 110-1 formed of a low-resistance metal mold such as Ti formed on the glass substrate 102 and an adhesive layer 110-1 formed on the adhesive layer 110-1. The second wiring portion 110-2 made of a conductive material such as copper is laminated. According to the structure shown in FIG. 10, the adhesiveness of the 2nd wiring part 110-2 and the glass substrate 102 of the 2nd wiring 110' can be improved. Moreover, although not shown in figure, the adhesive layer 110-1 of the 2nd wiring 110' shown in FIG.

In addition, the second wiring 110 may be any wiring as long as it can bridge and electrically connect the first wiring 104 separately formed on one main surface of the glass substrate 102 to the penetrating electrode 108 . For example, the second wiring 110 may be wire bonding for electrically connecting the first wiring 104 and the through-electrode 108 , or may be solder for electrically connecting the first wiring 104 and the through-electrode 108 . The material of the second wiring 110 can be, for example, metal oxides such as nickel, gold, tin, copper, aluminum, titanium, chromium, and ITO.

As shown in FIG. 2 , a plurality of second wirings 110 can be connected to one penetrating electrode 108 so as to be drawn in different directions. However, the present invention is not limited thereto. 11 is a plan view of a through-electrode substrate according to an embodiment of the present invention. As shown in FIG. 11 , only one second wiring 110 may be connected to one penetrating electrode 108 to be electrically connected to the first wiring 104 .

The first wiring 104, the second wiring 110, and the through-hole electrode 108 are formed of a conductive material. For example, gold, silver, copper, platinum, nickel, rhodium, ruthenium, iridium, or the like can be used. The same material may be used for the first wiring 104, the second wiring 110, and the leaf-through electrode 108, or a combination of different materials may be used. By forming the first wiring 104, the second wiring 110, and the through-hole electrode 108 with the same material, characteristic impedance matching can be improved.

In this embodiment, since the through-electrode 108 and the first wiring 104 are electrically connected by the second wiring 110, the conduction between the through-electrode 108 and the first wiring 104 on the glass substrate 102 can be ensured, and electrical reliability can be improved.

[Modification of structure 1 of wiring board] In the example shown in FIG. 2, the second wiring 110 is directly connected to the land 108-1 on the first surface 102a of the penetration electrode 108, but the present invention is not limited thereto. FIG. 9 is a diagram showing a modified example of the through-electrode substrate according to the embodiment of the present invention shown in FIG. 2 . FIG. 9(A) is a plan view of a through-electrode substrate according to an embodiment of the present invention. Fig. 9(B) is a sectional view along the line shown in Fig. 9(A).

As shown in FIG. 9 , the penetration electrode 108 may have a wiring portion 108 - 2 extending from the land 108 - 1 formed on the first surface 102 a. In this case, the second wiring 110 may be directly connected to the wiring portion 108 - 2 extending from the land 108 - 1 formed on the first surface 102 a of the penetration electrode 108 .

[Manufacturing method of wiring board 1] A method of manufacturing through electrode substrate 100 according to the first embodiment of the present invention shown in FIG. 2 will be described with reference to FIGS. 2 to 6 . In addition, in FIGS. 3 to 6 , the same components as those in FIGS. 1 to 2 will be described with the same symbols.

First, the first wiring 104 is formed on the glass substrate 102 (see FIG. 3 ). The first wiring 104 may be a component constituting a TFT or the like. In FIG. 3 , although the first wiring 104 is formed on the first surface 102a of the glass substrate 102, the present invention is not limited to this, and the first wiring 104 may be formed not only on the first surface 102a but also on the second surface 102b.

Next, the through hole 10 penetrating the first surface 102 a and the second surface 102 b is formed on the glass substrate 102 on which the first wiring 104 is formed on one or both surfaces (see FIG. 4 ). The through hole 10 is formed at a position of the glass substrate 102 , which is a portion where the first wiring 104 is not formed. The through hole 10 is formed at a position separated from the first wiring 104 . The shape of the through hole 10 may be a cylindrical shape with substantially constant upper and lower hole diameters.

The method of forming the through hole 10 in the glass substrate 102 may be any method.

Next, an adhesive layer 106 is formed on the inner wall of the through-hole 10 formed in the glass substrate 102 and the periphery of the through-hole on the first surface 102 a and the second surface 102 b (see FIG. 5 ). The adhesion layer 106 can be formed, for example, by methods such as spin coating, dip coating, and spray coating. The adhesive layer 106 functions later as an adhesive layer for forming a through-electrode material into a film. The adhesive layer 106 can be formed of a material containing organic resin.

Next, on the surface of the glass substrate 102 where the adhesive layer 106 is formed, the penetration electrodes 108 are formed (see FIG. 6 ). The through electrodes 108 are formed on the adhesive layer 106 formed on the surface of the glass substrate 102 . Penetrating electrode 108 is formed by forming a film of copper, nickel, or the like using an electroless plating method.

Here, when manufacturing the modified example of the structure 1 of the wiring board shown in FIG. The penetrating electrodes 108 are formed simultaneously in the above steps. Specifically, in the portion where the adhesive layer 106 is formed on the surface of the glass substrate 102, the penetration electrode 108 including the land 108-1 and the wiring portion 108-2 extending from the land 108-1 is formed (see FIG. 9 ). . The through electrodes 108 are formed on the adhesive layer 106 formed on the surface of the glass substrate 102 . Penetrating electrode 108 is formed by forming a film of copper, nickel, or the like using an electroless plating method.

In the present invention, by using the adhesive layer 106 as an adhesive layer or a reducing agent, the through-electrode material can be formed into a film in the through-hole 10 formed on the glass substrate 102 by electroless plating or the like.

There is also a method different from the present invention, that is, without forming the adhesion layer 106, a through-electrode material such as copper is formed into a film in the through-hole 10 formed on the glass substrate 102 by sputtering.

In the case where the aspect ratio of the through hole of the glass substrate is low (for example, when the thickness of the plate is thin or the hole diameter is large), even if an electrode material such as copper is formed into a film in the through hole by sputtering In the case of the method, it is also possible to form a through-hole electrode.

The so-called aspect ratio refers to the value of plate thickness/aperture diameter, and the relationship between "thickness of glass substrate 102" and "aperture diameter of through hole of glass substrate 102" is expressed by the aspect ratio of the through hole of glass substrate. For example, when the plate thickness is thick or the hole diameter is small, the aspect ratio becomes higher, and when the plate thickness is thin or the hole diameter is large, the aspect ratio becomes smaller.

However, when the aspect ratio of the through hole of the glass substrate is high (for example, the case of a thick plate or the case of a small hole diameter), the electrode material cannot be sufficiently formed into a film far from the main surface of the glass substrate by the sputtering method. Therefore, a blank portion (void or hollow) in which no electrode material is formed inside the through hole is likely to occur inside the through hole, which poses a problem in electrical reliability. For example, when the aspect ratio of the through-hole of the glass substrate is 3 or more, if the sputtering method is used, voids or hollow holes are likely to occur in the through-hole, which causes problems in electrical reliability.

In the present invention, by using the adhesive layer 106 as an adhesive layer or a reducing agent, even when the aspect ratio of the through-hole 10 formed in the glass substrate 102 is high, it can be sufficiently formed by electroless plating or the like. The through-electrode material is formed into a film in the through-hole 10 . Therefore, the present invention is useful in that the electrical reliability can be further improved especially for a high-density wiring substrate in which the through-holes 10 formed in the glass substrate 102 have an aspect ratio of 3 or more.

Next, in order to electrically connect the first wiring 104 formed on the glass substrate 102 to the through-electrode 108 formed at a position separated from the first wiring 104, a contact between the first wiring 104, the glass substrate 102, and the through-electrode 108 is formed. The second wiring 110 (see FIG. 2 ). In FIG. 2, although the 2nd wiring 110 is the wiring formed in contact with the 1st surface 102a of the glass substrate by a sputtering method etc., this invention is not limited to this.

As described above, in order to perform electroless copper plating on the glass substrate 102 to form the penetrating electrodes 108 , it is necessary to form the adhesive layer 106 as an adhesive layer on the glass substrate 102 . Also, if the penetration electrodes 108 are formed only through the adhesive layer 106 , conduction between the wiring layers such as the first wiring 104 formed in advance on the glass substrate 102 and the penetration electrodes 108 cannot be obtained. Therefore, in the present invention, the second wiring 110 is provided as a cross-linking wiring in order to obtain electrical conduction between the wiring layer such as the first wiring 104 formed in advance on the glass substrate 102 and the through electrode 108 formed through the adhesive layer 106 .

In the present invention, since the second wiring 110 electrically connects the first wiring 104 and the penetrating electrode 108 separately formed on one main surface of the glass substrate 102 in the form of a cross-linking wiring, it is possible to securely connect the penetrating electrode 108 and the first wiring 104. The conductive conduction can provide a through-electrode substrate with improved electrical reliability.

Moreover, as shown in FIG. 2, the 2nd wiring 110 may be the wiring formed in contact with the 1st surface 102a of a glass substrate by a sputtering method etc. FIG. In this case, the second wiring 110 is arranged so as to be in direct contact with one main surface of the glass substrate 102 (not insulated and separated), and will directly contact the first wiring 104 and the through-electrode 108 on the same surface (however, between the through-electrode 108 and the through-electrode 108 ). An adhesive layer 106 is interposed between the glass substrates 102.) Cross-linking. Specifically, in FIG. 2, the first wiring 104 directly in contact with the first surface 102a of the glass substrate and the land 108-1 of the through-electrode 108 on the first surface 102a are directly contacted by the first wiring 108-1 on the first surface 102a of the glass substrate. The second wiring 110 on the first surface 102a is electrically connected.

According to the structure of the second wiring 110 as shown in FIG. Since the second wiring 110 on the first surface 102a is electrically connected, the wiring density in a layer directly in contact with the first surface 102a of the glass substrate such as the land 108-1 formed with the first wiring 104 or the through-electrode 108 can be increased. In this way, if the wiring density in the layer directly in contact with the first surface 102a of the glass substrate is increased, it will be easier to form wiring to other layers correspondingly, and the degree of freedom in wiring design will increase.

In addition, since the first wiring 104 and the land 108-1 of the through-electrode 108 are connected in the same layer directly in contact with the first surface 102a of the glass substrate, the wiring length of the second wiring 110 can be shortened. Power on steadily. Moreover, since the second wiring 110 is in direct contact with the same surface as the first wiring 104 or the land 108 - 1 of the through-electrode 108 , the wiring layer can be lowered. In addition, when other wiring is laminated on the wiring layer through the insulating layer, the flatness of the lower wiring layer can be ensured.

In addition, since the first wiring 104, the land 108-1 of the through electrode 108, and the second wiring 110 are formed on the same first surface 102a of the glass substrate as a base, the heat generated by the thermal expansion of the first surface 102a of the glass substrate Since the stress acts uniformly on each of the first wiring 104, the through electrode 108, and the second wiring 110, twisting and disconnection of the wiring are less likely to occur, and the connection reliability is improved.

[Structure of Wiring Board 2] As the configuration 2 of the wiring board, a through-electrode board according to another embodiment of the present invention will be described with reference to FIGS. 7 and 8 . In addition, the same code|symbol is attached|subjected to the same structure as FIG. 1 and FIG. 2, and it demonstrates.

Penetrating electrode substrate 100' shown in FIG. 7 includes glass substrate 102 constituting penetrating electrode substrate 100 shown in FIG. 2 , first penetrating electrode 108a, first wiring 104, and second wiring 110. The through-electrode substrate 100' shown in FIG. 7 further includes an insulating layer 112, and on the insulating layer 112, a third wiring 114 constituting a wiring layer above the first wiring 104 is provided. The insulating layer 112 has an opening 20 on the first penetrating electrode 108 a , and the second penetrating electrode 108 b is formed on the inner wall of the opening 20 . The second penetrating electrode 108 b and the third wiring 114 have a structure cross-linked by the fourth wiring 116 on the insulating layer 112 .

The insulating layer 112 is provided so as to cover the first wiring 104 , the second wiring 110 , and the first penetrating electrode 108 on the first surface 102 a of the glass substrate 102 . The insulating layer 112 is an insulating layer made of an organic resin material, and functions as an interlayer insulating film for laminating another wiring layer made of the third wiring layer 114 on the wiring layer made of the first wiring layer 104 .

The insulating layer 112 has an opening 20 at a position overlapping with the through hole 10 where the first penetrating electrode 108a is formed, and the second penetrating electrode 108b is formed on the inner wall of the opening 20 of the insulating layer 112 .

Since the second penetrating electrode 108b is formed in the opening 20 of the insulating layer 112 made of an organic resin material, unlike the first penetrating electrode 108a, it is not necessary to interpose an adhesive layer therebetween. Therefore, the second through-hole electrode 108b can be directly formed on the surface of the insulating layer 112 by electroless copper plating or the like.

The second through electrode 108b electrically connects the third wiring 114 formed on the upper layer with the first through electrode 108a, and is used to connect the third wiring 114 formed on the first surface 102a of the glass substrate 102 to the second surface 102b. Get up and down conduction between other wiring, etc.

The second penetrating electrode 108b and the third wiring are formed at separate positions on the insulating layer 112 , and the fourth wiring 116 bridges the second penetrating electrode 108b and the third wiring on the insulating layer 112 to electrically connect the layer.

Penetrating electrode substrate 100' shown in FIG. 7 has a structure in which a wiring layer including first wiring 104 and a wiring layer including third wiring are laminated on first surface 102a of glass substrate 102, and a wiring layer including third wiring is stacked on the first surface 102a of glass substrate 102. 1 In the wiring layer of the wiring 104, the first through electrode 108a in direct contact with the first surface 102a of the glass substrate 102 and the first wiring 104 are intersected in this layer by the second wiring 110 in direct contact with the first surface 102a of the glass substrate 102. couplet. In addition, the wiring layer including the third wiring 114 has a structure in which the second penetrating electrode 108 b directly in contact with the upper surface of the insulating layer 112 and the third wiring 114 are connected via the fourth wiring directly in contact with the upper surface of the insulating layer 112 . 116 is cross-linked in this layer. Other configurations are the same as those of the through-electrode substrate 100 shown in FIGS. 1 and 2 .

In FIG. 7, although two layers of a wiring layer including the first wiring 104 and a wiring layer including the third wiring are laminated on the first surface 102a of the glass substrate 102, the present invention is not limited thereto, and may be laminated. More than 3 wiring layers.

Furthermore, as shown in FIG. 7 , the through electrode substrate 100 ′ may further include a third through electrode 108 c vertically conducting the third wiring 114 with other wiring formed on the second surface 102 b of the glass substrate 102 . As shown in FIG. 7 , an insulating layer 112 may be formed between the third penetration electrode 108 c and the glass substrate 102 . As a method of manufacturing the insulating layer 112 , for example, the insulating layer 112 can be formed by applying an insulating liquid resist film (resist film) on the surface of the glass substrate 102 using a roller coater. In addition, the insulating layer 112 may also be formed by using a dip coater or a spray coater.

FIG. 8 is a top view of the through-electrode substrate shown in FIG. 7 . In FIG. 8 , the uppermost wiring or through-electrode is shown by a solid line, and the wiring or through-electrode located on the lower layer is shown by a dotted line in a perspective view. As shown in FIG. 7 and FIG. 8, a plurality of first through-hole electrodes 108a are connected to each other on the wiring layer including the first wiring 104, and the second through-hole electrodes 108b are on the upper layer of the first wiring 104, that is, on the layer including the third wiring 114. The wiring layer is connected to the third penetrating electrode 108c which is another penetrating electrode.

In the present invention, since the fourth wiring 116 cross-connects the third wiring 114 formed separately on the insulating layer 112 and the second penetrating electrode 108b in this layer, the connection between the second penetrating electrode 108b and the third wiring 114 can be ensured. Conduction can provide the through-electrode substrate 100' with improved electrical reliability.

As shown in FIGS. 7 and 8 , a land 108b-1 is formed on the periphery of the through hole 130b in the hollow portion of the second through-wire 108b, and this land functions as a connection portion for electrically connecting other wirings to the through-electrodes. In addition, the first through-hole electrode 108a and the third through-hole electrode 108c may have lands on the peripheral edge of the through hole similarly to the second through-hole electrode 108b.

According to the through-electrode substrate 100 ′ having multiple wiring layers shown in FIGS. 7 and 8 , electrical reliability can be ensured, and at the same time, the wiring density can be further increased by stacking the wiring layers.

The above-mentioned respective embodiments which are embodiments of the present invention can be implemented in combination as appropriate unless they contradict each other. Moreover, based on each embodiment, the addition, deletion, or design change of the appropriate constituent elements by the industry is included in the scope of the present invention as long as it has the gist of the present invention.

Also, even if it is other effects different from the effects achieved by the above-mentioned embodiments, as long as they are clearly known from the description in this specification or can be easily expected by those in the industry, it is of course understood that they are achieved by means of Achieved by the present invention.

10‧‧‧through hole 20‧‧‧opening 100, 100'‧‧‧through electrode substrate 102‧‧‧Glass substrate 102a‧‧‧Side 1 102b‧‧‧Side 2 104‧‧‧1st wiring 106, 110－1‧‧‧adhesive layer 108, 108a, 108b‧‧‧through electrodes 108c‧‧‧Third penetrating electrode 108-1, 108b-1‧‧‧connection plate 108－2‧‧‧Wiring part 110‧‧‧Second wiring 110－2‧‧‧The second wiring part 112‧‧‧Insulation layer 114‧‧‧3rd wiring 116‧‧‧4th wiring 120‧‧‧wiring layer 122‧‧‧Bump 130, 130b‧‧‧perforation 200‧‧‧Printed substrate 300‧‧‧integrated circuits 1000‧‧‧semiconductor devices

FIG. 1 is a cross-sectional view of a semiconductor device using a through-electrode substrate according to an embodiment of the present invention. FIG. 2: FIG. 2(A) is a top view of a through-electrode substrate according to an embodiment of the present invention. Fig. 2(B) is a sectional view along the line shown in Fig. 2(A). 3 is a cross-sectional view illustrating a method of manufacturing a through-electrode substrate according to an embodiment of the present invention. 4 is a cross-sectional view illustrating a method of manufacturing a through-electrode substrate according to an embodiment of the present invention. 5 is a cross-sectional view illustrating a method of manufacturing a through-electrode substrate according to an embodiment of the present invention. 6 is a cross-sectional view illustrating a method of manufacturing a through-electrode substrate according to an embodiment of the present invention. 7 is a cross-sectional view of a through-electrode substrate according to another embodiment of the present invention. FIG. 8 is a top view of the through-electrode substrate shown in FIG. 7 . FIG. 9 : FIG. 9(A) is a plan view of a through-electrode substrate according to an embodiment of the present invention. Fig. 9(B) is a sectional view along the line shown in Fig. 9(A). 10 is a cross-sectional view of a through-electrode substrate according to an embodiment of the present invention. 11 is a plan view of a through-electrode substrate according to an embodiment of the present invention.

10‧‧‧through hole

100‧‧‧through electrode substrate

102‧‧‧Glass substrate

102a‧‧‧Side 1

102b‧‧‧Side 2

104‧‧‧1st wiring

106‧‧‧adhesive layer

108‧‧‧through electrode

108-1‧‧‧connection plate

110‧‧‧Second wiring

130‧‧‧perforation

Claims (6)

A through-electrode substrate, comprising: a substrate made of inorganic materials; a first wiring provided on the substrate; a through hole provided in the substrate at a position separated from the first wiring; and a through hole provided on the inner wall of the through hole the through-electrode; the second wiring connecting the first wiring and the through-electrode; the insulating layer provided on the first wiring, the second wiring and the through-electrode; the third wiring provided on the insulating layer; and A fourth wiring in contact with the insulating layer, the third wiring, and the through-electrode; the insulating layer is made of an organic resin material; and the through-electrode includes: a first through-electrode provided on the inner wall of the through-hole; and The second penetrating electrode provided inside the opening of the insulating layer. A through-electrode substrate, comprising: a substrate made of inorganic materials; a first wiring provided on the substrate; a through hole provided in the substrate at a position separated from the first wiring; and a through hole provided on the inner wall of the through hole and the second wiring connecting the first wiring and the through-electrode; and the aspect ratio of the through-hole is 3 or more. The through-electrode substrate according to claim 1 or 2, further comprising an adhesive layer provided between the substrate and the through-electrode. The through-electrode substrate according to claim 3, wherein the second wiring is further connected to the tight layer contact. The through-electrode substrate according to claim 3, wherein the adhesive layer contains an organic resin material. A semiconductor device using the through-electrode substrate according to any one of claims 1 to 5.

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