TWI781977B - Plasma processing device - Google Patents

Abstract

[Problem] To provide a plasma processing apparatus capable of adjusting the composition of a processing gas for each of a plurality of gas shower heads while using a common processing gas raw material supply unit. [Solution] In a plasma processing apparatus (1) for performing plasma processing on a substrate (G) to be processed, in a processing space (100) for accommodating a stage (13) on which the substrate to be processed (G) is placed The first and second processing gas raw material supply parts (4a, 4b) for supplying the first and second processing gas raw materials are respectively provided with first and second supply flow rate adjustment parts (41a, 41b), and for A plurality of gas shower heads (30a-30d), a plurality of first and second distribution channels (401, 402) for distributing the first and second processing gas raw materials, are also respectively provided with first and second distribution flow regulators parts (421a-424a, 421b-424b).

Description

Plasma treatment device

The present invention relates to the technique of plasma processing the substrate to be processed by using the plasmaized processing gas.

In the manufacturing process of flat-panel displays (FPD) such as liquid crystal display devices (LCD), there is a process of etching by supplying plasmaized processing gas to the glass substrate as the substrate to be processed placed in the processing space. Or plasma treatment such as film-forming treatment. Various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD apparatus, are used for these plasma processing.

On the other hand, the size of the glass substrate is increasing. For example, in a rectangular glass substrate for LCD, the length of the short side x the long side is about 2200mm x about 2400mm, and even the size of the surface to be treated is about 2800mm x about 3000mm, and the required amount of treatment is provided. The gas, furthermore, must be processed uniformly within the plane of the glass substrate.

In addition, as the size of the above-mentioned glass substrate increases, the concentration of the processing gas reaching the glass substrate, the state of plasma formation, and the like may vary greatly within the surface to be processed. Therefore, there arises a problem that the processing state of the glass substrate is uneven in the plane due to the processing gas. Furthermore, it is also difficult to supply the required amount of processing gas to each position of such a large glass substrate.

For example, Patent Document 1 describes that the inside of the shower head is divided into concentric circles to install, for example, three buffer chambers, and a common gas supply source is distributed to these buffer chambers, and power is supplied to the processing chamber in which the substrate is processed. Etching gas technology for slurry etching. According to this patent document 1, an additional gas for adjusting the etching characteristics is supplied to the etching gas supplied to the two buffer chambers located on the peripheral side of the buffer chambers, and the etching gas is locally adjusted within the substrate surface. The concentration of etching gas. However, in the technology described in Patent Document 1, when supplying additional gas, since a dedicated gas supply source is provided for each supply path for supplying etching gas to each buffer chamber, the structure of the gas supply source may be enlarged. Yu. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent No. 4358727: Claim 1, Paragraphs 0004, 0028, 0049-0050, Figure 5

[Problem to be Solved by the Invention]

The present invention was conceived in view of such circumstances, and an object of the present invention is to provide a plasma processing apparatus capable of adjusting the composition of the processing gas for each of a plurality of gas shower heads using a common processing gas raw material supply unit. [Means to solve the problem]

The plasma processing apparatus of the present invention implements the plasma processing by the plasmaized processing gas on the substrate to be processed in the processing space that is evacuated. The plasma processing apparatus is characterized in that it has: a processing container , which is equipped with a mounting platform for placing the above-mentioned substrate to be processed, and constitutes a processing space for implementing the above-mentioned plasma treatment; a plurality of gas shower heads are respectively arranged on the zenith surface constituting the above-mentioned processing space, and the above-mentioned zenith surface A plurality of areas divided in the radial direction from the central part side toward the peripheral part side are formed with gas discharge holes for supplying the processing gas to the above-mentioned processing space; The processing gas supplied to the processing space is plasmaized; the first processing gas raw material supply part for supplying the first processing gas raw material contained in the above processing gas, and the second processing gas for supplying the second processing gas raw material a raw material supply unit; a first supply flow adjustment unit, which is used to adjust the flow rate of the first processing gas raw material supplied from the first processing gas raw material supply unit to the above-mentioned processing space; a plurality of first distribution flow adjustment units, which They are respectively installed in the plurality of first distribution channels for distributing and supplying the first processing gas raw material whose flow rate is regulated in the first supply flow adjustment part to the plurality of gas shower heads, so as to be supplied to The flow rate adjustment of the first raw material gas of each gas shower head; The second supply flow rate adjustment part is used to perform the flow rate of the second processing gas raw material supplied from the second processing gas raw material supply part to the above-mentioned processing space adjustment; and a plurality of second distribution flow adjustment parts, which are respectively arranged in order to distribute and supply the second processing gas raw material whose flow rate is adjusted in the second supply flow adjustment part to the plurality of the above-mentioned plurality of gas shower heads. The second distribution channel is used to adjust the flow rate of the second source gas supplied to each gas shower head. [Invention effect]

In the present invention, the first and second supply flow adjustment parts for adjusting the flow rate of the first and second processing gas raw materials are respectively provided in the first and second processing gas raw material supply parts, and for distributing these flow rates to a plurality of shower heads The plurality of first and second distribution channels for the first and second process gas raw materials are also provided with first and second distribution flow rate regulators. As a result, the first and second processing gas raw materials obtained from the common first and second processing gas raw material supply units can be mixed in an arbitrary ratio and supplied to each position of the substrate to be processed.

Before explaining the specific configuration of the plasma processing apparatus 1 related to the embodiment of the present invention, regarding the example of the plasma processing implemented in the plasma processing apparatus 1, the problems grasped during the implementation of the process are as follows: It will be described while referring to FIGS. 1 and 2 . Figures 1 and 2 show enlarged longitudinal side views of different areas on the upper surface (processed surface) of the substrate G to be processed. The substrate G to be processed is stacked on the glass substrate 701 in the order of SiO film 702 and SiN film 703 as silicon-containing films, and on the SiN film 703, a photoresist film 704 to be exposed and developed is patterned. .

For example, the substrate G to be processed is constituted by a rectangular glass substrate 701 for FPD. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (Electro Luminescence: EL) display, a plasma display panel (PDP), and the like.

For the above-mentioned substrate G to be processed, at least one of carbon tetrafluoride (CF ₄ ) gas or nitrogen trifluoride (NF ₃ ) gas that is the first processing gas raw material, and oxygen gas that is the second processing gas raw material Etching gas of (O ₂ ) gas is plasma-formed and supplied, and the photoresist film 704 is gradually ashed, and the SiO film 702 and SiN film 703 in the area not covered by the photoresist film 704 are removed. . The SiO film 702 or the SiN film 703 corresponds to the film to be etched in this embodiment.

Regarding the above-mentioned processing, the present inventors found out that the longitudinal cross-sectional shape of the patterned photoresist film 704 is different according to the position in the processed surface of the substrate G to be processed. As a result, the results of the etching process tend to be different from each other.

For example, in the photoresist film 704 formed on the peripheral side of the substrate G to be processed, as shown in FIG. situation.

For the portion where the end of the patterned photoresist film 704 has a large inclination, use one with a low concentration (partial pressure) of O ₂ gas (for example, a fluid ratio of O ₂ gas/CF ₄ gas of 1:3). When the etching process is performed by etching gas, the SiO film 702 and the SiN film 703 on the glass substrate 701 are etched away in a good state as shown in FIG. 1( b ). In addition, when etching is performed using an etching gas having a high O ₂ concentration (for example, the flow ratio of O ₂ gas/CF ₄ gas is 3:2), as shown in FIG. At the end of the SiN film 703, residues depending on the shape of the taper of the photoresist film 704 (tapered residues 71a) or small needle-shaped etching residues 71b may remain.

Furthermore, for example, in the photoresist film 704 formed on the central part side of the substrate G to be processed, as shown in FIG. The situation of becoming smaller.

For the portion where the inclination of the end of the photoresist film 704 after patterning is small, use a low concentration of O ₂ gas (for example, the same flow ratio of O ₂ gas/CF ₄ gas as in FIG. 1( b )). When the etching process is performed by etching gas, as shown in FIG. In addition, when the etching process is performed using an etching gas with a high concentration of O ₂ gas (for example, the same flow ratio of O ₂ gas/CF ₄ gas as in the case of FIG. 1( c ), as shown in FIG. 2( c ), Generally, the SiO film 702 and the SiN film 703 on the glass substrate 701 are removed by etching in a good state.

According to the correspondence relationship between the concentration of O gas in the _etching gas described above and the results of the etching process in each position of the substrate G to be processed, in order to obtain a good etching process on the peripheral portion side of the substrate G to be processed As a result, when an etching gas with a low concentration of O gas is supplied to the entire surface of the substrate G to be processed, needle _- shaped etching residues remain at the ends of the SiO film 702 and the SiN film 703 on the central portion side of the substrate G to be processed. The danger of 71b.

Furthermore, in order to obtain a good etching treatment result _on the central portion side of the substrate G to be processed, when an etching gas having a high concentration of O gas is supplied to the entire surface of the substrate G to be processed, there may be a problem at the peripheral portion side of the substrate G to be processed. The end portions of the SiO film 702 and the SiN film 703 may have tapered residues 71a or needle-shaped etching residues 71b. In response to the problem described above, the plasma processing apparatus 1 according to the present embodiment can change the concentration of O ₂ gas in the etching gas according to the position of the substrate G to be processed.

The configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described using FIGS. 3 and 4 . As shown in the longitudinal side view of Figure 3, the plasma processing device 1 is provided with a container body 10 in the shape of an angle tube made of a conductive material, such as aluminum whose inner wall surface is anodized. grounded. An opening is formed on the upper surface of the container body 10 , and the opening is airtightly sealed by a rectangular metal window 3 provided insulated from the container body 10 .

The space surrounded by the container bodies 10 and the metal windows 3 becomes the processing space 100 for the substrate G to be processed. The space on the upper side of the metal window 3 serves as an antenna room 50 in which a high-frequency antenna (plasma antenna) 5 is disposed. Furthermore, on the side wall of the container body 10, there are provided a loading and unloading port 101 for loading and unloading the substrate G to be processed and a gate valve 102 for closing the loading and unloading port 101.

On the lower side of the processing space 100 , a mounting table 13 for mounting the substrate G to be processed is provided so as to face the metal window 3 . The mounting table 13 is made of conductive material, such as aluminum with anodized surface, and its shape is rectangular when viewed from above. The substrate G to be processed placed on the stage 13 is sucked and held by an electrostatic chuck (not shown). The mounting table 13 is accommodated in the insulator frame 14 and arranged on the bottom surface of the container main body 10 through the insulator frame 14 .

A second high-frequency power supply 152 is connected to the mounting table 13 via a matching unit 151 . The second high-frequency power supply 152 applies high-frequency power for biasing the stage 13 , for example, high-frequency power with a frequency of 3.2 MHz. Ions in the plasma generated in the processing space 100 are introduced into the substrate G to be processed by the self-bias voltage generated based on the high-frequency power for the bias voltage. In addition, in the mounting table 13, in order to control the temperature of the substrate G to be processed, a temperature control mechanism composed of a heating means such as a ceramic heater and a refrigerant flow path, a temperature sensor, and a temperature sensor for controlling the substrate G to be processed are provided. The back side supplies the gas flow path of He gas for heat transfer (both are not shown).

Furthermore, an exhaust port 103 is formed on the bottom surface of the container body 10, and a vacuum exhaust unit 12 including a vacuum pump and the like is connected to the exhaust port 103. The inside of the processing space 100 is evacuated by the vacuum exhaust part 12 to the pressure during plasma processing. As shown in FIG. 3, a plurality of exhaust ports 103 are provided around the mounting table 13, and are disposed near the four corners of the mounting table 13, which is rectangular in plan view, and along the four sides of the mounting table 13. Wait.

As shown in FIG. 3 and FIG. 4 which is a top view of the metal window 3 viewed from the side of the processing space 100, on the upper side of the side wall of the container body 10, a rectangular frame made of metal such as aluminum, that is, a metal window is provided. Box 11. A sealing member 110 for keeping the processing space 100 airtight is provided between the container body 10 and the metal frame 11 . Here, the container body 10 and the metal frame 11 constitute the processing container of this embodiment.

Furthermore, the metal window 3 of this example is divided into a plurality of partial windows 30, and these partial windows 30 are arranged inside the metal frame 11 to form a rectangular metal window 3 as a whole. Each partial window 30 is made of, for example, a non-magnetic and conductive metal, aluminum, or an alloy including aluminum.

Each partial window 30 also serves as gas shower heads 30a to 30d for supplying process gas. For example, as shown in FIG. 3, a gas diffusion chamber 301 for diffusing etching gas is formed inside each of the gas shower heads 30a to 30d. Furthermore, a plurality of gas discharge holes 302 for supplying processing gas to the processing space 100 are formed on the lower surface side of the region where the gas diffusion chamber 301 is formed. The partial windows 30 (gas shower heads 30a to 30d ) having these structures are held by a holding portion not shown in the figure, and constitute the metal window 3 described above, and also constitute the zenith surface of the processing space 100 .

When describing the planar shape and arrangement of the respective gas shower heads 30a to 30d while referring to FIG. The plurality of areas are provided with zenith surfaces, that is, metal windows 3 . In the above-mentioned 3-divided area, a gas shower head 30a is provided in the rectangular area on the side of the central part, and a gas shower head 30a is provided in an angular ring-shaped area around the gas shower head 30a. Shower head 30b.

In addition, among the plurality of regions formed by dividing the zenith surface, the corner ring-shaped region on the outermost peripheral side is divided into four regions including corners of the corner ring (corners of the rectangular zenith surface) , and four regions including the side portions of the above-mentioned corner ring (rectangular shape) sandwiched between the adjacent above-mentioned corner portions. In addition, peripheral gas shower heads 30d are provided in four regions including corners, and peripheral gas shower heads 30c are provided in four regions including edges.

Moreover, in order to perform vacuum exhaust in the processing space 100, the aforementioned exhaust ports 103 arranged around the mounting table 13 are provided below the annular region where the peripheral gas shower heads 30c, 30d are provided. position, or a position on the outer side than the lower position (Figure 3).

The mutually divided gas shower heads 30a-30d (partial windows 30) are electrically insulated from the metal frame 11 or the container body 10 on the lower side by the insulating member 31, while the adjacent gas shower heads 30a-30d They are also insulated from each other by an insulating member 31 (see FIGS. 3 and 4 ).

Moreover, in order to improve the plasma resistance of the partial windows 30, the surface of each partial window 30 on the processing space 100 side (below the gas shower heads 30a-30d) is coated with plasma resistance. Specific examples of plasma-resistant coating include formation of a dielectric film by anodizing oxidation treatment or ceramic spraying.

As shown in FIG. 3, the gas diffusion chamber 301 of each of the gas shower heads 30a-30d is connected to the CF4 gas supply part _4a and the _O2 gas supply part 4b through the gas supply pipes 43a-43d. The CF ₄ gas supply unit 4a corresponds to the first processing gas raw material supply unit of the present embodiment (the "first processing gas raw material supply unit" is shown in FIGS. 3 and 5 ), and the first processing gas is supplied from the CF ₄ gas supply unit 4a. The raw material is CF ₄ gas. In addition, even if an NF ₃ gas supply unit is provided instead of the CF ₄ gas supply unit 4a, it is of course also possible to supply NF ₃ gas as the first processing gas raw material.

On the downstream side of the CF ₄ gas supply unit 4a, a first supply flow adjustment unit 41a for adjusting the flow rate of the CF ₄ gas supplied to the processing space 100 is provided, and on the downstream side of the first supply flow adjustment unit 41a , a plurality of first distributing channels 401 such as four are connected through the on-off valve V1. Each of the first distribution channels 401 is connected to the gas supply pipes 43a to 43d on the sides of the gas shower heads 30a to 30d, and distributes and supplies the CF ₄ gas whose flow rate is regulated by the first supply flow rate regulator 41a to multiple gases. Functions of the shower heads 30a-30d. For example, the first supply flow rate regulator 41a is constituted by a mass flow controller (MFC).

In addition, first distribution flow rate regulators 421a to 424a for adjusting the flow rate of CF ₄ gas supplied to each of the gas shower heads 30a to 30d are provided in each of the first distribution channels 401 . For example, the first distribution flow rate regulators 421a to 424a are constituted by MFC. Since the CF4 gas whose flow rate is regulated in the first supply flow adjustment part 41a on the upstream side is distributed to any flow ratio in the first distribution flow adjustment parts 421a to _424a on the downstream side, when the flow rate is adjusted in the first supply flow adjustment part When the set value of the flow rate of the CF ₄ gas in 41a is F ₁ , and the set values of the respective flow rates of the first distribution flow rate regulators 421a to 424a are set to f ₁₁ to f ₁₄ , F ₁ =f ₁₁ +f ₁₂ +f ₁₃ The relationship of +f ₁₄ is established.

On-off valves V31-V34 are provided on the downstream side of each of the first distribution flow rate regulators 421a-424a, and the first distribution channel 401 is connected to the gas supply pipes 43a-43d at positions downstream of the on-off valves V31-V34. At this time, the length and cross-sectional area of the gas flow paths from each of the first distribution flow rate adjustment parts 421a to 424a to the plurality of gas shower heads 30a to 30d are unified to make the conductance of the gas flow paths equal. The plurality of gas shower heads 30a to 30d supply gas more evenly.

In addition, the O ₂ gas supply unit 4b corresponds to the second processing gas raw material supply unit in this embodiment (the “second processing gas raw material supply unit” is shown in FIGS. 3 and 5 ), and the second gas is supplied from the O ₂ gas supply unit 4b. The processing gas raw material is _O2 gas. On the downstream side of the _O2 gas supply part 4b, a second supply flow rate adjustment part 41b for adjusting the flow rate of the _O2 gas supplied to the processing space 100 is provided, and on the downstream side of the second supply flow rate control part 41b A plurality of, for example, a first distribution channel 401 is connected via an on-off valve V2, and four second distribution channels 402 are similarly connected. Each of the second distribution channels 402 joins with different first distribution channels 401, and these are connected to the gas supply pipes 43a to 43d already described on the sides of the gas shower heads 30a to 30d via the first distribution channels 401. . Even for each of the second distribution channels 402, the function of distributing and supplying the O ₂ gas whose flow rate is regulated in the second supply flow rate regulator 41b to the plurality of gas shower heads 30a to 30d is also exhibited. For example, the 2nd supply flow rate adjustment part 41b is comprised by MFC.

In addition, second distribution flow rate regulators 421b to 424b for adjusting the flow rate of O ₂ gas supplied to each of the gas shower heads 30a to 30d are provided in each of the second distribution channels 402 . For example, the second distribution flow rate regulators 421b to 424b are constituted by MFC. Because the O2 gas whose flow rate is adjusted in the second supply flow adjustment part 41b on the upstream side is distributed to any flow ratio in the second distribution flow adjustment parts 421b to 424b on the downstream side, when the _O2 gas in the second supply flow adjustment part When the set value of the flow rate of O ₂ gas in 41b is F ₂ , and the set values of the respective flow rates of the second distribution flow rate regulators 421b to 424b are set to f ₂₁ to f ₂₄ , F ₂ =f ₂₁ +f ₂₂ +f The relationship of ₂₃ +f ₂₄ is established.

On-off valves V41-V44 are provided on the downstream side of each of the second distribution flow adjustment parts 421b-424b, and each second distribution flow path 402 is connected to the gas supply pipes 43a-43d at the downstream side of the on-off valves V41-V44. The first distribution channel 401 joins together. At this time, the length and cross-sectional area of the gas flow path from each of the second distribution flow rate adjustment parts 421b to 424b to the plurality of gas shower heads 30a to 30d are unified to make the conductance of the gas flow path equal. The plurality of gas shower heads 30a to 30d supply gas more evenly.

Fig. 5 shows the first and second distribution channels 401 and 402 provided with the gas shower heads 30a to 30d constituting the metal window 3 and the first and second distribution flow regulators 421a to 424a and 421b to 424b. connection relationship. When according to Fig. 5, for the gas shower head 30a on the central part side and the gas shower head 30b around it, the first distribution flow adjustment parts 421a, 422a, and the second distribution flow adjustment parts 421b, 422b are used. Flow adjustment of each gas.

In addition, the gas whose flow rate is adjusted by using the common first and second distribution flow rate adjustment parts 423a and 423b is distributed and supplied to the four peripheral gas shower heads 30c constituting the edge portion of the corner ring on the peripheral portion side. Furthermore, for the four peripheral gas shower heads 30d constituting the corners of the above-mentioned corner ring, the gas flow rate is adjusted by using the common first and second distribution flow regulators 424a and 424b different from the sides. gas.

Furthermore, as shown in FIG. 3 , a top plate portion 61 is disposed above the metal window 3 , and the top plate portion 61 is supported by a side wall portion 63 provided on the metal frame 11 . The antenna room 50 is formed by the space surrounded by the metal window 3 , the side wall 63 and the top plate 61 , and the high-frequency antenna 5 is arranged in the antenna room 50 so as to face part of the window 30 .

The high-frequency antenna 5 is arranged to be spaced apart from the partial window 30 via a spacer made of, for example, an insulating member not shown. The high-frequency antenna 5 is formed in a spiral shape (not shown in plan) so as to surround the rectangular metal window 3 in the plane corresponding to each partial window 30 . In addition, the shape of the high-frequency antenna 5 is not limited to a spiral, and it may be a loop antenna in which one or a plurality of antenna lines are looped. Furthermore, it is also possible to use a multi-antenna in which a plurality of antennas are wound while offsetting the angle, and the whole is formed into a spiral shape. In this way, if the antenna wires are arranged in the plane corresponding to the metal window 3 or each partial window 30 so as to go around along the circumferential direction, it does not matter what the structure of the high-frequency antenna 5 is.

A first high-frequency power supply 512 is connected to each high-frequency antenna 5 via a matching unit 511 . Each high-frequency antenna 5 is supplied with high-frequency power of, for example, 13.56 MHz from a first high-frequency power supply 512 via a matching unit 511 . Accordingly, eddy currents are excited on each surface of the partial window 30 between plasma treatments, and an induced electric field is formed inside the processing space 100 by the eddy currents. The processing gas discharged from the gas discharge hole 302 is plasmaized in the processing space 100 by the induced electric field.

Furthermore, as shown in FIG. 3 , a control unit 6 is provided in this plasma processing apparatus 1 . The control unit 6 is composed of a computer with a CPU (Central Processing Unit) and a memory unit, which are not shown in the figure. In the memory unit, programs for outputting control signals or flow rate adjustment units 41a, 41b, 421a-424a, 421b are recorded. The program of the step (command) group of the flow rate setting value of ~424b, and the control signal is to implement vacuum exhaust in the processing space 100 where the substrate G to be processed is disposed, and use the high-frequency antenna 5 to send the etching gas (processing gas) The operation of processing the substrate G to be processed by making it plasma. The program is stored in a memory medium such as a hard disk, CD, magneto-optical disk, memory card, etc., and then installed in the memory.

The action of the plasma processing apparatus 1 having the configuration described above will be described. First, the gate valve 102 is opened, and the substrate G to be processed is carried into the processing space 100 from the adjacent vacuum transfer chamber through the transfer mechanism (neither of which is shown in the figure) through the loading and unloading port 101. Next, the substrate G to be processed is placed on the mounting table 13 and fixed by an electrostatic chuck (not shown), and the transfer mechanism is retracted from the processing space 100 to close the gate valve 102 .

Then, each on-off valve V1, V2, V31-V34, V41-V44 is opened, and the supply of CF4 gas and _O2 gas whose flow rates are adjusted by the first supply flow rate regulator 41a and the second supply flow rate regulator 41b, respectively, is started _. . The O ₂ gas system is divided into the four second distribution flow channels 402 , and after the flow rates are adjusted in the second distribution flow rate regulators 421 b to 424 b , they join together in the first distribution flow channel 401 . In addition, the CF ₄ gas system is divided into four first distribution channels 401 and mixed with the O ₂ gas supplied from the second distribution channel 402 side after the flow rates are adjusted by the first distribution flow rate regulators 421a to 424a.

For CF ₄ gas and O ₂ gas, the first supply flow rate regulator 41 a, the second supply flow rate regulator 41 b, the first distribution flow rate regulators 421 a to 424 a, and the second distribution flow rate regulators 421 b to 424 b are passed through respectively. Before and after splitting, two-stage flow adjustment can be performed, and the first and second processing gas raw materials obtained from the first and second processing gas raw material supply parts can be mixed and supplied in a relatively simple structure at an arbitrary ratio independent of each other. To each position of the substrate to be processed. As a result, etching can be performed at a flow rate ratio of O ₂ gas/CF ₄ gas corresponding to the inclination of the end portion of the photoresist film 704 for each region of the glass substrate 701 . The etching gas obtained by mixing CF ₄ gas and O ₂ gas is introduced into the gas diffusion chamber 301 of each of the gas shower heads 30 a to 30 d through the gas supply pipes 43 a to 43 d.

When describing the flow ratio of O ₂ gas/CF ₄ gas, the etching gas distributed to the gas shower head 30a is adjusted to be in the range of O ₂ gas/CF ₄ gas=1:3～3:2 The etching gas distributed to the peripheral gas shower heads 30c and 30d is adjusted to a value within the range of O ₂ gas/CF ₄ gas=1:3 to 3:2. Also, for the etching gas distributed to the gas shower head 30b located between the gas shower head 30a and the peripheral gas shower heads 30c, 30d, the flow rate ratio of _O2 gas/CF4 gas is adjusted to the above _- mentioned values in each range. Furthermore, as will be described later, the peripheral gas shower head 30c at the side and the peripheral gas shower head 30d at the corner may be supplied with etching gases having different flow ratios of O ₂ gas/CF ₄ gas.

In addition, on the side of the container body 10, the vacuum evacuation in the processing space 100 is performed by the vacuum exhaust part 12, and the pressure atmosphere in the processing space 100 is adjusted to, for example, about 0.66 to 26.6 Pa. Furthermore, the temperature of the substrate G to be processed placed on the mounting table 13 is adjusted, and at the same time, He gas for heat transfer is supplied to the back side of the substrate G to be processed.

Next, high-frequency power is applied to the high-frequency antenna 5 from the first high-frequency power supply 512 , thereby generating a uniform induced electric field in the processing space 100 through the metal window 3 . As a result, the etching gas is plasmaized in the processing space 100 by the induced electric field, and high-density inductively coupled plasma is generated. Then, ions in the plasma are introduced toward the substrate G to be processed by the high frequency power for bias applied to the mounting table 13 from the second high frequency power supply 152 , and the substrate G to be processed is etched.

At this time, the first and second distribution flow rate regulators 421a to 424a, 421b to 424b are located at the central portion compared to the peripheral gas shower heads 30c and 30d located on the zenith surface, that is, at the peripheral portion side of the metal window 3. The flow rates of CF ₄ gas and O ₂ gas are respectively set in such a way that the concentration of O ₂ gas in the etching gas supplied to the side gas shower heads 30 b and 30 a is relatively high. In other words, the first and second distribution flow adjustment parts 421a-424a, 421b-424b are in accordance with the taper of the end of the photoresist film 704 patterned on the upper side of the SiO film 702 or SiN film 703 (the film to be etched). For the areas of different sizes, the gas shower heads 30c, 30d are used to supply the etching gas to the area with a large taper, and the gas shower heads 30b, 30b are used to supply the etching gas to the area with a small taper. 30a In the case where the oxygen concentration in the supplied etching gas is high, the flow rates of CF ₄ gas and O ₂ gas are respectively set.

By setting the flow rates of CF4 gas and _O2 gas mentioned above, the region _on the peripheral side of the substrate G to be processed (FIG. 1(a)) where the photoresist film 704 with a large tapered end is patterned can use O ₂ Etching process is carried out with etching gas with low concentration of gas. As a result, the SiO film 702 and the SiN film 703 of the glass substrate 701 can be etched and removed in a good state ( FIG. 1( b )).

At this time, the peripheral gas shower head 30c at the edge of the peripheral side and the peripheral gas shower head 30d at the corner are connected to different first and second distribution flow adjustment parts 423a, 424a, 423b , 424b, the concentration of O ₂ gas in the etching gas supplied to each peripheral gas shower head 30c, 30d may also be different.

In addition, in the area on the central portion side of the substrate G to be processed (FIG. 2(a)) where the photoresist film 704 with a small taper at the end is patterned, the etching process can be performed using an etching gas with a high concentration of _O2 gas. . As a result, the SiO film 702 and the SiN film 703 can be etched and removed from the glass substrate 701 in a good state ( FIG. 2( c )).

Moreover, if the plasma treatment is performed only for the time set in advance, even if the power supply from the high-frequency power sources 512, 152 is stopped, and the CF ₄ gas and O ₂ gas are supplied from the CF ₄ gas supply unit 4a and the O ₂ gas supply unit 4b, The gas is also exhausted from the processing space 100 . Thereafter, the substrate G to be processed is carried out in the reverse order of the carrying-in.

When using the plasma processing apparatus 1 related to this embodiment, the following effects can be obtained. The CF ₄ gas supply unit 4a and the O ₂ gas supply unit 4b are respectively provided with first and second supply flow rate regulators 41a and 41b for adjusting the flow rates of the CF ₄ gas and the O ₂ gas _. The gas and _O2 gas are distributed to the multiple first and second distribution channels 401 and 402 of the multiple gas shower heads 30a to 30d, and the first and second distribution flow adjustment parts 421a to 424a and 421b to 424b are also provided respectively. . As a result, CF ₄ gas and O ₂ gas obtained from the common CF ₄ gas supply unit 4 a and O ₂ gas supply unit 4 b can be mixed in any ratio, and etching after these gases are mixed in a desired ratio can be performed. The gas is supplied to each position of the substrate G to be processed. Accordingly, even if the vertical cross-sectional shape of the patterned photoresist film 704 is different depending on the position of the processed surface of the substrate G to be processed, CF gas and O gas can be flowed at a flow rate corresponding to the vertical cross _- sectional shape _. Since the ratio is supplied to each of the plurality of gas shower heads 30a to 30d, a good etching process result can be obtained.

Here, the plasma processing apparatus 1 configured to be able to supply etching gases having different O ₂ concentrations from the plurality of gas shower heads 30a to 30d is not limited to the case described with reference to FIG. 1 and FIG. In the process in which the remaining of tapered residue 71a or etching residue 71b is a problem, it is the case of etching to remove the etching target film (in the above example, SiO film 702 or SiN film 703 which is a silicon-containing film) in good condition. For example, when the already-described slope formed at the end of the photoresist film 704 is transferred to the pattern after etching, the above-mentioned plasma treatment can also be used for the purpose of aligning the transferred tapered shape. device 1.

6(a), 7(a) show an example of patterning a photoresist film 704 on polysilicon or molybdenum, that is, an etching target film 707, on a substrate G to be processed for forming a thin film transistor (the etching target is omitted. The description of the lower layer side of the film 707).

The polysilicon film or the molybdenum film, that is, the etching target film 707 can be made of carbon tetrafluoride (CF ₄ ) gas, sulfur hexafluoride (SF ₆ ) gas, nitrogen trifluoride (NF ₃ ) gas, etc., which are the first processing gas. At least one gas or chlorine (Cl ₂ ) gas is selected, and the second process gas, which is oxygen (O ₂ ) gas, is plasmatized and removed. In this example, the same as the removal of the silicon-containing film (SiO film 702 or SiN film 703) described above, the case where the above-mentioned etching target film 707 is removed using an etching gas containing CF ₄ gas and O ₂ gas will be described.

Here, the taper of the photoresist film 704 is also affected by the coating and development process of the photoresist film 704. Depending on the process, there are also examples similar to those shown in Figures 1(a) and 2(a). Conversely, there is a case where the taper becomes larger on the central portion side of the substrate G to be processed and becomes smaller on the peripheral portion side. 6(a), 7(a) show such an example.

In this way, for the substrate G to be processed on which the photoresist film 704 with different tapers is formed, for example, on the entire surface of the substrate G to be processed, an etching process with an equal mixing ratio of CF4 gas/ _O2 gas ( _O2 mixing ratio concentration) is supplied _. The case of etching with gas is discussed. In the etching process using the photoresist film 704, the photoresist film 704 is gradually ashed by the action of O ₂ gas contained in the etching gas, and the etching target film 707 is etched. Therefore, by controlling the concentration of O ₂ gas contained in the etching gas, the ashing rate of the photoresist film 704 during etching of the etching target film 707 can be changed.

At this time, when the concentration of O gas in the _etching gas is almost equal between the central part side and the peripheral part side of the substrate G to be processed, the ashing amount per unit time of the photoresist film 704 at each position is almost equal. Under the same conditions, etching was performed. As a result, since etching is performed while maintaining the different taper of the photoresist film 704, even the taper transferred to the pattern 707a is in a different state within the surface of the substrate G to be processed. That is, there is a discrepancy in that the taper angle θ ₁ of the end portion of the pattern 707a formed on the central portion side of the substrate G to be processed is larger than the taper angle θ ₂ of the end portion of the pattern 707a formed on the peripheral portion side ( FIG. 6 (b), 7(b)).

In addition, there are cases where it is necessary to make the taper of the polysilicon or molybdenum pattern 707a as uniform as possible in the plane of the substrate G to be processed due to the requirements of subsequent processing following the etching process. The plasma processing apparatus 1 demonstrated using FIG. 3 can be utilized also in such a case. In this case, the flow rates of the CF ₄ gas are respectively set in the first distribution flow rate regulators 421a to 424a so that the etching process is completed within a specific process time. Moreover, the second distribution flow rate regulators 421b to 424b, compared with the peripheral gas shower heads 30c and 30d located on the zenith surface, that is, the peripheral part side of the metal window 3, from the gas shower head located on the central part side 30b and 30a are supplied with a higher concentration of O ₂ gas in the etching gas, the flow rate of O ₂ gas is set respectively.

In other words, the first and second distribution flow rate regulators 421a to 424a, 421b to 424b supply etching to a region with a smaller taper than the end of the photoresist film 704 patterned on the upper surface side of the etching target film 707. The gas shower heads 30c and 30d at the position of the gas are set so that the oxygen concentration in the etching gas supplied from the gas shower heads 30b and 30a at the position where the etching gas is supplied to the above-mentioned large tapered region is relatively high. Flow rate of CF ₄ gas and O ₂ gas.

By setting the flow rates of the above _- mentioned CF4 gas and _O2 gas, in the region ₍ FIG. An etching gas with a high concentration is used for etching, and an etching process with a low concentration of _O2 gas is used in the area on the peripheral side of the substrate G to be processed ( FIG. 7( a )) where the photoresist film 704 with a small taper is patterned. gas for etching.

At this time, since the ashing speed of the photoresist film 704 with a large taper angle is faster than that of the photoresist film 704 with a small taper angle, ashing is performed in a direction in which the taper angle difference of each region is reduced. As a result, etching can be performed while making the tapers θ' ₁ and θ' ₂ of the end portions of the pattern 707a formed by the photoresist films 704 approach each other (FIG. 6(c) and FIG. 7(c)).

Next, while referring to Figs. 8 and 9, the configuration and applicable process of the plasma processing apparatus 1a related to the second embodiment will be described.

Fig. 8(a) is an enlarged longitudinal sectional side view showing the upper surface of the substrate G to be processed. In this substrate G to be processed, an aluminum film 705 having a thickness of about several hundreds of nm is formed on a glass substrate 701, and an SiO ₂ film 706 of about several tens of nm is formed thereon.

Further, on the SiO ₂ film 706, a photoresist film 704a is patterned for etching the laminated film of these aluminum film 705 and SiO ₂ film 706 into a line and space shape. The photoresist film 704a is patterned so that the line width and the space width of the line and the space become about tens of nm, respectively.

By supplying a first processing gas raw material, which is chlorine (Cl ₂ ) gas which is also a main etching gas, and a second processing gas raw material, which is nitrogen which is also an additive gas, to the substrate G to be processed having the above-mentioned structure, Adding gas (N ₂ ) gas and halogen-containing gas (hereinafter, also referred to as "halogen-containing additive gas"), such as trifluoromethane (CHF ₃ ), is plasmaized and removed without passing through the photoresist. Etching treatment of the Al film 705 and the SiO ₂ film 706 in the area covered by the film 704a. Here, as the halogen-containing added gas, trifluoromethane (CHF ₃ ) is used as an example, but CF ₄ , C ₂ HF ₅ , C ₄ F ₈ , BCl ₃ , HCl, etc. can be used.

With respect to the substrate G to be processed as described above, the present inventors have found that depending on the position within the surface to be processed of the substrate G to be processed, there are areas where etching is easy to perform, and where it is difficult to obtain the desired line-and-space pattern 72 by etching. The situation of the area.

For example, on the peripheral portion side of the substrate G to be processed, as shown in FIG. 8( b ), a relatively good line and space pattern 72 is formed. As shown, an incomplete pattern 73 due to poor etching is formed.

The reason why the incomplete pattern 73 is formed on the central portion side of the substrate G to be processed is estimated to be that the amount of carbon generated by etching the photoresist film 704a is larger than that on the peripheral portion side of the substrate G to be processed. Furthermore, due to _The generated carbon has a low degassing capability, so the etching process by the main etching gas, that is, the Cl gas, which is the main etching gas, that is, the carbon attached to the aluminum film 705 and the SiO film 706 not covered by the photoresist film 704a is _suppressed . caused by inhibition.

Therefore, the plasma processing apparatus 1a according to the second embodiment has a configuration capable of supplying different flow rates of etching gas to each region of the substrate G to be processed using the gas shower heads 30a to 30d divided into plural. Fig. 9 is a schematic representation from the first processing gas raw material supply part, that is, the Cl gas supply part 4c (shown as "the first processing gas raw material supply part" in Fig. 9), and the _second processing gas raw material supply part, that is _The N gas supply part 4d and the halogen-containing added gas supply part 4e (respectively "the second processing gas raw material supply part (1) and the second processing gas raw material supply part (2) shown in Fig. 9 " are sprayed toward each gas. Head 30a～30d supply the supply path of each gas.In addition, the concrete device structure of plasma processing apparatus 1a is because of using Fig. In the plasma processing apparatus 1a shown in FIG. 9 and the plasma processing apparatus 1b shown in FIG. 10 described later, the components common to those explained using FIGS. 3 and 4 are indicated with the symbols used in these drawings. same symbol.

The plasma processing apparatus 1a shown in FIG. 9 is a point in which the gas types of the first and second processing gas raw materials are different, and the two types supplied from the _N2 gas supply part 4d and the halogen-containing additive gas supply part 4e are mixed. The point where the gas is branched in the second distribution channel 402 is different from the plasma processing apparatus 1 related to the first embodiment already described. Furthermore, in this example, the flow rate ratio of _N2 gas/halogen-containing additive is set to be the same among the gas shower heads 30a-30d, and in addition, Cl can be distributed from each of the gas shower heads 30a-30d. _2. The gas distribution ratio is different, and the flow rate adjustment by the first and second distribution flow rate adjustment parts 421a to 424a, 421b to 424b is performed.

If the plasma processing apparatus 1a equipped with the above-mentioned structure is used, the gas shower head 30a positioned on the central portion side of the substrate G to be processed, where carbon is easily adhered due to the photoresist film 704a during etching, is used to control the main body. The distribution ratio of the etching gas, that is, the Cl ₂ gas distribution, the addition gas, that is, the N ₂ gas, and the halogen-containing additive gas, is smaller than that of the peripheral gas shower heads 30c and 30d located on the peripheral side, and can suppress the gas caused by the photoresist film 704a. A good line and space pattern 72 can be obtained by the adhesion of the carbon. Furthermore, the supply flow rate of the main etching gas which is the first processing gas source and the additional gas which is the second processing gas source can be made different between the circumferentially divided peripheral gas shower heads 30c and 30d.

As above, in the plasma processing apparatuses 1 and 1a related to the first and second embodiments described with reference to FIGS. 3, 4 and 7, the peripheral gas shower head 30c, Although the peripheral gas shower head 30d is divided in the circumferential direction, the peripheral gas shower head 30c and the peripheral gas shower head 30d divided in the circumferential direction are not limited to the outermost peripheral area.

The partial window 30, which is the zenith surface, is divided into four in the radial direction, and the annular regions on the inner side of the outermost circumference are divided in the circumferential direction, and the peripheral gas shower heads 30c and 30d may be arranged. For example, if it is located in an area on the outer peripheral side of 1/2 of the distance from the center position of the partial window 30 to the peripheral position, by providing the peripheral gas shower heads 30c and 30d divided in the circumferential direction, it is possible to In order to improve the processing result by adjusting the flow ratio of etching gas (processing gas) and adjusting the supply flow rate in accordance with the positional relationship with the exhaust port 103 .

In addition, it is not necessary to divide the area located on the outer peripheral side of the partial window 30 in the circumferential direction. As shown in the plasma processing apparatus 1b of FIG. 10, for the gas shower head 30e arranged in the area on the outer peripheral side formed by radially dividing the rectangular partial window 30, even if the division in the circumferential direction is not performed, The processing gas may be supplied from the angular ring-shaped gas shower head 30e.

Fig. 10 shows that by combining the first processing gas raw material, i.e. silicon tetrafluoride (SiF ₄ ) gas and silicon tetrachloride (SiCl ₄ ) gas, and the second processing gas raw material, i.e. nitrogen (N ₂ ) gas or A configuration example of a plasma processing apparatus 1b for forming a SiO ₂ film or a SiN film on a substrate G to be processed by plasma forming and supplying a film-forming gas of oxygen (O ₂ ) gas.

In Fig. 10, SiCl ₄ gas supply part 4f and SiF ₄ gas supply part 4h are set as examples as the first processing gas raw material supply part (shown in Fig. 10 as "the first processing gas raw material supply part (1), the first processing gas Gas raw material supply part (2)", set _N2 gas supply part 4g and _O2 gas supply part 4i as the situation of the 2nd processing gas raw material supply part (indicate respectively in Fig. 10 " the 2nd processing gas raw material supply part (1 ), the second processing gas raw material supply part (2)". At the downstream side of the SiCl ₄ gas supply part 4f and the SiF ₄ gas supply part 4h, the first supply flow rate adjustment parts 41a, 41c are respectively provided, and further in the first supply flow rate On the downstream side of the regulating parts 41a and 41c, three first distribution channels 401 are commonly connected through the on-off valves V1 and V3. Moreover, on the downstream side of the _N2 gas supply part 4g and the _O2 gas supply part 4i, respectively The first supply flow rate regulators 41b and 41d are provided, and three second distribution channels 402 are commonly connected downstream of the first supply flow rate regulators 41b and 41d via on-off valves V2 and V4.

In the plasma processing apparatus 1b shown in FIG. 10, after mixing the two types of gases supplied from the SiCl ₄ gas supply part 4f and the SiF ₄ gas supply part 4h, the point where the first distribution channel 401 is divided, and the gas from the N ₂ The gas supplied to either one of the gas supply unit 4g and the O ₂ gas supply unit 4i is different from the plasma processing apparatus 1 related to the first embodiment described above at the point where the gas is branched in the second distribution channel 402 . By switching supply of N ₂ gas and O ₂ gas from any one of the N ₂ gas supply unit 4 g and the O ₂ gas supply unit 4 i, the SiN film or the SiO ₂ film can be switched to be formed.

In addition, even the specific apparatus configuration of the plasma processing apparatus 1b is the same as that of the plasma processing apparatus 1 described using FIGS. 3 and 4 , so further description is omitted.

11 shows the pressure at each position in the path from the gas box provided with SiCl4 gas supply part 4f or SiF4 gas supply part _4h , _N2 gas supply part _4g to the gas shower head 30a, 30b, 30e.

The drawing of the four corners in Fig. 11 shows that the second distribution channel 402 is not provided, but on the upstream side of the first distribution flow adjustment parts 421a~423a, SiCl4 gas supply part _4f , SiF4 gas supply part _4h , _N2 The gas supply unit 4g mixes SiF ₄ gas whose flow rate is adjusted to 150 sccm, SiCl ₄ gas whose flow rate is adjusted to 150 sccm, and N ₂ gas whose flow rate is adjusted to 4000 sccm, and supplies it to the gas shower through the first distribution channel 401. The pressure at each position in the case of the head 30a, 30b, 30e.

When SiCl ₄ gas, SiF ₄ gas and N ₂ gas are mixed in advance, the MFC, that is, the total pressure in the upstream path of the first distribution flow rate regulators 421a to 423a rises to about 33kPa (250torr). When referring to the vapor pressure curve of SiCl ₄ (boiling point 57.6°C) shown in Fig. 12, the pressure is the vapor pressure at a temperature higher than 25°C. Therefore, if the piping on the upstream side of the first distribution flow rate regulators 421a to 423a through which the mixed gas (film-forming gas) of SiCl ₄ gas, SiF ₄ gas and N ₂ gas flows is not heated, SiCl ₄ may condense.

Furthermore, since the conductance of the first distribution flow adjustment parts 421a to 423a becomes smaller, the pressure of the mixed gas increases upstream of the first distribution flow adjustment parts 421a to 423a, so it is also difficult to accurately supply the SiCl4 gas with a low vapor pressure _. question.

Then, as shown in FIG. 10, by separating the SiCl ₄ gas and the SiF ₄ gas supplied from the SiCl ₄ gas supply part 4f and the SiF ₄ gas supply part 4h, the first distribution channel 401 is supplied from the N ₂ gas. The second distribution channel 402 for supplying the _N2 gas supplied to the part 4g, as shown by the rhombus in FIG. Condensation of SiCl ₄ gas with low vapor pressure is suppressed, and SiCl ₄ gas is supplied correctly. Furthermore, even if N ₂ gas is supplied from the N ₂ gas supply part 4g and O ₂ gas is supplied from the O ₂ gas supply part 4i, a mixed gas of SiCl ₄ gas, SiF ₄ gas and O ₂ gas (film-forming gas) is used. ) in the case of film formation, the same effect can also be obtained.

In addition, when SiCl ₄ gas or SiF ₄ gas is supplied separately from SiCl ₄ gas supply unit 4f or SiF ₄ gas supply unit 4h, the substances constituting each gas are condensed or it is difficult to supply accurately, It is also possible to separate the first distribution channel 401 for SiCl ₄ gas or SiF ₄ gas and the second distribution channel 402 for supplying N ₂ gas or O ₂ gas. Accordingly, condensation of each substance can be suppressed, and SiCl ₄ gas or SiF ₄ gas can be supplied accurately.

In the example described above, an example using SiCl ₄ gas and SiF ₄ gas was shown as an example of the first process gas raw material. Here, in the case of using the first processing gas raw material as the raw material of Si, in terms of gas species that can be used, in addition to the SiCl ₄ and SiF ₄ already described, SiBr ₄ , SiF ₂ Cl can also be used in combination. _2. Any gas species or two or more gas species selected from the SiH ₄ gas species. In addition, in the above-mentioned example, an example using N ₂ gas and O ₂ gas was shown as an example of the second process gas raw material. Here, in the case of using the second processing gas raw material as oxidizing gas, nitriding gas, diluent gas, and clean gas, the gas species that can be used can also be used in combination from O ₂ , N ₂ , N ₂ O, Ar Any gas species selected from the gas species of , He, and NF ₃ , or two or more gas species.

Like the plasma processing apparatus 1b described above, by the necessity of being more upstream than the gas shower heads 30a, 30b, 30e, the SiCl ₄ gas supply part 4f and the SiF ₄ gas supply part 4h (first Processing gas raw material supply part), N ₂ gas supply part 4g, or O ₂ gas supply part 4i (second processing gas raw material supply part), it is not necessary to divide the gas shower head 30e on the outer peripheral side in the circumferential direction. However, from the viewpoint of film thickness adjustment, etc., it is necessary to change the supply flow rate of the film-forming gas or the first and second processing gas raw materials for each region divided in the circumferential direction such as the corner and edge of the substrate G to be processed. In the case of the flow rate ratio, it is of course also possible to supply the film-forming gas using the peripheral gas shower heads 30c and 30d divided in the circumferential direction.

In the above, in the plasma processing apparatuses 1, 1a, and 1b related to the embodiments described using FIGS. 100 of the processing gas to be plasma for example. However, the method of plasmating the processing gas is not limited to the inductive coupling method. For example, even in the plasma processing apparatus 1 shown in FIG. 3 , the first high-frequency power supply 512 is connected to each of the gas shower heads 30 a to 30 d, instead of the arrangement of the high-frequency antenna 5, and the mounting table 13 and the metal window are configured. 3 (Gas shower heads 30a to 30d) The parallel plate-type plasma generation unit may plasmaize the process gas by capacitive coupling.

Furthermore, even in the case of inductively coupled plasma using the high-frequency antenna 5, it is not essential that the gas shower heads 30a to 30d, 30e be constituted by the partial windows 30 made of metal, even if they are made of, for example, quartz or the like. Dielectric windows made of dielectric materials are also acceptable.

Furthermore, the treatment of the substrate G to be processed is not limited to the above-mentioned etching treatment or film formation treatment, and other film formation treatment or etching of a metal film, an ITO film, an oxide film, etc. when forming a thin film transistor may also be used. Various plasma treatments such as other etching treatment of these films, ashing treatment of photoresist films, etc.

Furthermore, the plasma processing apparatuses 1, 1a, and 1b are not limited to the substrate G for FPDs, and may be used for the above-mentioned various plasma processings on the substrate G for solar cell panels.

Even when the distribution supply rectangular metal window 3 has a short side and a long side, the peripheral gas shower head 30c is divided into a peripheral gas shower head on the long side and a peripheral gas shower head on the short side, respectively. The gas whose flow rate is adjusted individually may be used using different first distribution flow rate adjustment parts and second distribution flow rate adjustment parts.

Although MFCs are used as the first distribution flow adjustment parts 421a to 424a and the second distribution flow adjustment parts 421b to 424b, even if they are replaced by them, pressure-type split flow controllers that distribute the supplied gas according to specific pressure ratios and specific flow rate controllers are used. Alternately assigned flow controllers are also available.

G‧‧‧Substrates to be processed 30a, 30b, 30e‧‧Gas shower head 30c, 30d‧‧Peripheral gas shower head (gas shower head) 4a‧‧CF ₄ gas supply part 4b‧ _‧‧O2 gas supply part _{4c‧‧‧Cl2} gas supply part _{4d‧‧‧N2} gas supply part 4e‧‧‧halogen-containing added gas supply part _{4f‧‧‧SiCl4} gas supply part _{4g‧‧‧N2} Gas supply unit _{4h‧‧‧SiF 4Gas} supply unit 4i‧‧‧O 2Gas supply unit 401‧‧‧First distribution channel 402‧‧‧Second distribution channel 41a‧‧‧First power supply flow adjustment unit 41b ‧‧‧Second power supply flow adjustment parts 421a～424a‧‧‧First distribution flow adjustment parts 421b～424b‧‧‧Second distribution flow adjustment parts 43a～43d‧‧Gas supply pipe 5‧‧High frequency antenna 6 ‧‧‧Control Department

FIG. 1 is a first explanatory diagram of a substrate to be processed processed in the plasma processing apparatus according to the embodiment. Fig. 2 is a second explanatory view of a substrate to be processed in a plasma processing apparatus. Fig. 3 is a longitudinal sectional side view of the plasma treatment device. FIG. 4 is a top view of a metal window provided in the above-mentioned plasma processing device. Fig. 5 is a diagram of a supply system for supplying etching gas to each gas shower head constituting the metal window. Fig. 6 is a first explanatory diagram related to another substrate to be processed in the plasma processing apparatus. Fig. 7 is a second explanatory diagram related to the above-mentioned other substrate to be processed. Fig. 8 is an explanatory diagram of a substrate to be processed processed in the plasma processing apparatus according to the second embodiment. Fig. 9 is a diagram of a supply system for supplying processing gas to the plasma processing apparatus according to the second embodiment. Fig. 10 is a diagram of a supply system for supplying processing gas to the plasma processing apparatus according to the third embodiment. Fig. 11 is an explanatory diagram showing the pressure at each position in the process gas supply flow path. Fig. 12 is a temperature-vapor pressure characteristic diagram of SiCl ₄ gas.

1‧‧‧Plasma treatment device

3‧‧‧Metal window

4a‧‧‧CF ₄ gas supply unit

4b‧‧‧O ₂ gas supply unit

5‧‧‧High Frequency Antenna

6‧‧‧Control Department

10‧‧‧Container body

11‧‧‧Metal frame

12‧‧‧Vacuum exhaust part

13‧‧‧Placing table

14‧‧‧Insulator frame

30‧‧‧partial window

30a, 30b‧‧‧gas spray head

30c, 30d‧‧‧peripheral gas spray head (gas spray head)

31‧‧‧Insulation components

41a‧‧‧The first power supply flow adjustment department

41b‧‧‧The second power supply flow adjustment unit

43a~43d‧‧‧gas supply pipe

50‧‧‧antenna room

61‧‧‧top plate

63‧‧‧side wall

100‧‧‧processing space

101‧‧‧Import and export

102‧‧‧gate valve

103‧‧‧Exhaust port

110‧‧‧Sealing components

151‧‧‧Matching Department

152‧‧‧High frequency power supply

301‧‧‧Gas diffusion chamber

302‧‧‧Gas outlet

401‧‧‧The first distribution channel

402‧‧‧The second distribution channel

421a~424a‧‧‧The first distribution flow adjustment part

421b~424b‧‧‧The second distribution flow adjustment part

511‧‧‧Matcher

512‧‧‧High frequency power supply

G‧‧‧Substrate to be processed

V1, V2, V31~V34, V41~V44‧‧‧on/off valve

Claims (10)

A plasma processing device, which performs plasma processing on a substrate to be processed in a processing space that is evacuated by a vacuum, and is characterized in that the plasma processing device includes: a processing container , which is equipped with a mounting platform for placing the above-mentioned substrate to be processed, and constitutes a processing space for performing the above-mentioned plasma treatment; a plurality of gas shower heads are respectively arranged on the zenith surface constituting the above-mentioned processing space, and the above-mentioned zenith surface A plurality of regions divided in the radial direction from the central part side toward the peripheral part side are formed with gas discharge holes for supplying processing gas to the above-mentioned processing space; the plasma generating part is used to inject the gas from the above-mentioned plurality of shower heads The processing gas supplied to the processing space is plasmaized; the first processing gas raw material supply part for supplying the first processing gas raw material contained in the above processing gas, and the second processing gas for supplying the second processing gas raw material a raw material supply unit; a first supply flow adjustment unit for adjusting the flow rate of the first processing gas raw material supplied from the first processing gas raw material supply unit to the processing space; and a plurality of first distribution flow adjustment units, They are respectively installed in the plurality of first distribution channels for supplying the first processing gas raw material whose flow rate is regulated in the first supply flow adjustment part to the plurality of first distribution flow paths of the plurality of gas shower heads. Adjustment of the flow rate of the first raw material gas to each gas spray head; The second supply flow adjustment part is used to adjust the flow rate of the second processing gas raw material supplied from the second processing gas raw material supply part to the above-mentioned processing space; and the plurality of second distribution flow adjustment parts are respectively controlled by It is provided to distribute and supply the second processing gas raw material whose flow rate is regulated in the second supply flow adjustment part to the plurality of second distribution flow paths of the plurality of gas shower heads, so as to be supplied to each gas shower head. The flow rate of the second raw material gas in the shower head is adjusted. The above-mentioned processing gas system is used to etch the etching target film formed on the glass substrate, that is, the substrate to be processed. The raw material of the second processing gas is oxygen, and it is set in The first and second distribution flow rate adjustment parts of the plurality of first and second distribution flow paths are adapted to correspond to the regions where the inclination of the end of the photoresist film that is patterned on the upper side of the above-mentioned etching target film is different in size, so that The flow rates of the first and second processing gas raw materials described above are set in such a manner that the oxygen concentration of the etching gas supplied from the gas shower head at the position where the etching gas is supplied to these regions changes. The plasma processing device as set forth in claim 1, wherein among the plurality of regions formed by radially dividing the zenith surface, the annular region on the peripheral side is divided into plural regions formed by dividing the annular region in the circumferential direction. In the region, a gas shower head with a gas discharge hole for supplying processing gas to the above-mentioned processing space, that is, a plurality of peripheral gas shower heads, is provided, The first processing gas is also distributed and supplied to each of the above-mentioned peripheral gas shower heads from the first distribution flow path provided with the first distribution flow adjustment part and the second distribution flow passage provided with the second distribution flow adjustment part. Raw material, second process gas raw material. The plasma processing device as set forth in claim 2, wherein the planar shape of the zenith surface is rectangular, and the peripheral gas shower head including the corners of the rectangular shape is provided on the peripheral gas shower head, and is Sandwiched between the adjacent corners, the peripheral gas shower heads including the rectangular sides are distributed and supplied from the common first and second distribution channels. The above-mentioned first and second processing gas raw materials are distributed and supplied to the first and second gas shower heads at the periphery of the edge from the common first and second distribution channels different from those at the periphery of the corner. 2 Handle gas raw materials. The plasma processing device as set forth in claim 2 or 3, wherein the exhaust port for vacuum exhaust in the above-mentioned processing space is arranged at the lower position of the annular area where the above-mentioned peripheral gas shower head is provided , or a position further outside than the lower position. The plasma processing device as set forth in any one of claims 1 to 3, wherein the second distribution flow paths merge at the first distribution flow paths on the downstream side of the first distribution flow adjustment section. The plasma processing device according to any one of Claims 1 to 3, wherein the plasma generating part is arranged above the gas shower head, and is used to generate the plasma of the processing gas by inductive coupling. In the plasmonic antenna, the plurality of gas shower heads are respectively composed of metal windows composed of conductive partial windows, and the adjacent gas shower heads are insulated from each other. The plasma processing device as set forth in Claim 1, wherein the above-mentioned etching target film is a silicon-containing film, and the above-mentioned first processing gas raw material is at least one of tetrafluorocarbon gas or trifluoronitrogen gas, and is installed in the plurality of first, The first and second distribution flow rate adjustment parts of the second distribution flow path are the gas at the position where the etching gas is supplied to the region where the inclination of the end of the photoresist film patterned on the upper surface side of the above-mentioned etching target film is larger than that of the second distribution channel. The shower head, the gas shower head at the position where the etching gas is supplied to the region where the inclination of the end of the photoresist film is small, performs the first and second steps respectively in a manner that the oxygen concentration of the etching gas supplied is high. 2 Flow rate setting of processing gas raw materials. The plasma processing device as set forth in Claim 1, wherein the film to be etched is a polysilicon film or a molybdenum film, and the raw material of the first processing gas is selected from carbon tetrafluoride gas, sulfur hexafluoride, nitrogen trifluoride or chlorine gas. at least one gas, The first and second distribution flow adjustment parts of the plurality of first and second distribution channels are provided so as to be smaller than the inclination of the end of the photoresist film patterned on the upper side of the etching target film The gas shower head at the position where the etching gas is supplied to the area, and the gas shower head at the position where the etching gas is supplied from the area with a large inclination to the end of the photoresist film is a method in which the oxygen concentration of the etching gas supplied is high , set the flow rates of the above-mentioned first and second processing gas raw materials respectively. The plasma processing device as described in any one of Claims 1 to 3, wherein the above-mentioned processing gas system is used to etch the aluminum film formed on the glass substrate, that is, the substrate to be processed, and the silicon dioxide on the upper side The film etching gas, the raw material of the first processing gas is chlorine gas, and the raw material of the second processing gas is nitrogen gas and halogen-containing gas, which are installed in the first and second distribution flow adjustment parts of the plurality of first and second distribution channels , compared with the gas shower head located on the peripheral side of the above-mentioned zenith surface, the distribution of chlorine, nitrogen and halogen-containing gases in the etching gas supplied from the gas shower head located on the central part side is relatively small , set the flow rates of the above-mentioned first and second processing gas raw materials respectively. The plasma processing device as described in any one of Claims 1 to 3, wherein the above-mentioned processing gas system is used to form a film-forming gas that is formed on a glass substrate, that is, a silicon-containing film on the substrate to be processed, and the above-mentioned first The processing gas raw material is at least one of silicon tetrafluoride gas or silicon tetrachloride gas, the second processing gas raw material is nitrogen or oxygen, The above-mentioned second distributing passages respectively merge at the first distributing passages on the downstream side of the above-mentioned first distributing flow regulating part, and the above-mentioned first supplying flow regulating part and the above-mentioned first distributing flow regulating part are supplied from the first supplying flow regulating part. The pressure in the flow path from the flow adjustment part to the first distribution flow adjustment part is maintained at a flow rate of the first processing gas raw material at a pressure lower than the vapor pressure of the first processing gas raw material at room temperature, Make flow settings.

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