TWI780883B - Chemical mechanical polishing pad conditioner and manufacture method thereof - Google Patents

Abstract

Provided are a chemical mechanical polishing pad conditioner and manufacture method thereof. The method includes steps as follows: Step (A): providing raw abrasive particles and screening the raw abrasive particles to pick out multiple diamond grains having a shape of tetrakis-dodecahedron; Step (B): heating the diamond grains having a shape of tetrakis-dodecahedron to a predetermined temperature, so as to get multiple rounding diamond grains; wherein the predetermined temperature ranges from 800°C to 1000°C; Step (C): providing a substrate, which has a bonding layer on the surface of the substrate; and Step (D): burying the rounding diamond grains in the bonding layer to obtain the chemical mechanical polishing pad conditioner, wherein at least parts of the diamond grains respectively protrude from an outer surface of the bonding layer.

Description

Chemical mechanical polishing pad dresser and its manufacturing method

The present invention relates to a grinding tool and its manufacturing method, in particular to a chemical mechanical grinding pad dresser containing diamond particles.

In the semiconductor manufacturing process, chemical mechanical polishing (CMP) is the most effective and common way to achieve large-area planarization of the dielectric layer or conductive layer on the wafer, and the polishing pad (also called polishing pad ) is the most important accessory for performing CMP. By contacting the surface of the wafer with the polishing pad and applying the polishing slurry (CMP slurry) to the polishing pad at the same time, the polishing pad and the polishing slurry can remove impurities or impurities on the surface of the wafer through chemical corrosion and mechanical removal. flat structure. When the polishing pad is used for a period of time, because the grinding debris generated during the grinding process accumulates on the surface of the polishing pad, and will cause the surface of the polishing pad to be glazed (glazing), resulting in a decrease in the grinding effect and efficiency. Therefore, the industry often uses chemical machinery The polishing pad conditioner modifies the surface of the polishing pad and restores the roughness of the surface of the polishing pad to maintain the polishing quality.

In order to roughen the surface of the polishing pad, the chemical mechanical polishing pad dresser needs to have a bonding layer arranged on the substrate, and a plurality of abrasive particles (such as diamond particles) are embedded in the bonding layer; wherein, the abrasive particles have protruding The sharp points on the outer surface of the combination layer, and the sharp points protruding from the outer surface of the combination layer form a flat surface. The sharp points protruding from the outer surface of the bonding layer can remove debris on the surface of the polishing pad when pressed against the polishing pad. However, the grinding action of the chemical mechanical polishing pad dresser is not easy to control, often causing the polishing pad to produce a lot of grinding pad debris of different sizes, especially large debris may cause the consumption of the polishing pad to become faster or block the flow of the polishing liquid , can not ensure the expected dressing effect; even, if the large pieces of grinding pad debris are not completely removed, the large pieces of grinding pad debris are likely to cause multiple tiny protrusions on the surface of the polishing pad, and these tiny protrusions will also increase the impact of the subsequent grinding pad on the surface. Risk of scratching the wafer during wafer action (i.e. grinding and polishing).

In view of the defective of above-mentioned chemical mechanical polishing pad dresser, the purpose of the present invention is to provide a kind of method for making of chemical mechanical polishing pad dresser, the chemical mechanical polishing pad dresser that it makes can reduce, even avoid to use when finishing polishing pad. The situation that the polishing pad produces large debris, thereby reducing the risk of faster consumption of the polished polishing pad or blocking the flow of the polishing liquid when the aforementioned chemical mechanical polishing pad dresser is used for dressing, so as to ensure the expected dressing effect and reduce the risk caused by this The risk of scratching the wafer when the polished pad of the chemical mechanical polishing pad dresser acts on the wafer.

Another object of the present invention is to provide a method for manufacturing a chemical mechanical polishing pad dresser, which does not need to limit the specifications of the chemical mechanical polishing pad dresser or the arrangement of abrasive particles, so it has the advantage of simple manufacturing process.

To achieve the aforementioned purpose, the present invention provides a method for preparing a chemical mechanical polishing pad dresser, which includes steps (A) to (D). Step (A): Provide abrasive grain raw material, and carry out a screening operation on the abrasive grain raw material to select a plurality of diamond particles whose shape is hexoctahedron; Step (B): heating the diamond grains whose shape is hexoctahedron solid diamond particles to a predetermined temperature to obtain a plurality of rounded diamond particles; wherein, the predetermined temperature is 800 ° C to 1000 ° C; step (C): provide a substrate, the surface of the substrate has a A bonding layer; and, step (D): embedding the rounded diamond particles in the bonding layer, and at least part of the rounded diamond particles protrude from the outer surface of the bonding layer to obtain the chemical mechanical polishing pad dressing device.

In the present invention, the diamond particles with a specific shape are selected as candidates for abrasive particles, and then the selected diamond particles are subjected to a heating treatment step in a specific temperature range, so that the sharp ridges of the diamond particles before heating are passed through. After heating, it becomes rounded, that is, rounded diamond particles are obtained. These rounded diamond particles are not easy to break at the junction of crystal planes, and the decrease in hardness due to heat treatment is smaller than that of unrounded diamond particles after the same heat treatment, so it can maintain proper sharpness and improve wear resistance , so that the chemical mechanical polishing pad dresser comprising it can reduce or even avoid the abrasive particle breakage and large-size debris of the chemical mechanical polishing pad dresser when dressing the polishing pad, and reduce the chemical mechanical polishing pad dresser simultaneously. When the polishing pad dresser is dressing the polishing pad, the risk of blocking the flow of the polishing liquid can ensure the expected dressing effect, thereby improving the overall economic benefits of the polishing process.

According to the present invention, the abrasive raw material can be natural diamond, artificial diamond or polycrystalline diamond (polycrystalline diamond, PCD), etc., but not limited thereto. When the above-mentioned diamond is used as the abrasive material, the shape of the above-mentioned diamond can also include hexahedron, octahedron, rhombic dodecahedron, tetrahexahedron (tetrahexahedron), triangular octahedron, Tetragonal trioctahedron, truncated octahedron, etc., but not limited thereto.

According to the present invention, in the step (A), the diamond particles in the shape of hexahedron have a Feret Ratio greater than 0.80. The Feret ratio is the ratio of the shortest Feret diameter to the longest Feret diameter; the Feret diameter is defined as the distance between two parallel planes that need to be clamped Objects (such as the aforementioned diamond particles), and perpendicular to the specified direction, can also be called the caliper distance. .

Preferably, in the step (A), the average particle diameter of the hexocahedral diamond particles is 40 micrometers (μm) to 1500 μm, but not limited thereto. More preferably, in the step (A), the average particle size of the diamond particles in the shape of hexahedron is 60 μm to 1200 μm.

Preferably, the manufacturing method of the chemical mechanical polishing pad dresser may further include a step (M) between the step (A) and the step (B); step (M): the The diamond particles are subjected to a ball milling process. The feret ratio of the hexahedral diamond particles after ball milling treatment is greater than that of the hexocahedral diamond particles without ball milling treatment.

According to the present invention, there is no special limitation on the environment for heating the diamond particles whose shape is hexahedral. For example, the step (B) can be carried out in an atmospheric environment, an oxygen atmosphere environment, a nitrogen atmosphere environment or an inert atmosphere environment for heating. Preferably, the step (B) is carried out in an atmospheric environment.

Preferably, in the step (B), the heating time is from 4 hours to 18 hours. The heating time includes heating time and temperature holding time.

In some implementations, in this step (B), the heating method can adopt a one-stage heating method, that is, heating to the predetermined temperature at the same heating rate, for example, it can be fixed at 1 ° C / minute to 7 The heating rate of °C/min is heated from room temperature to the predetermined temperature; or, in other implementations, in this step (B), the heating method can adopt a multi-stage heating method, that is, in different temperature ranges in stages Heating to the predetermined temperature at different heating rates, for example, when the multi-stage heating method is a two-stage heating method, it includes a first heating stage and a second heating stage; wherein, the first heating stage It is heated to 300°C at a heating rate of 3°C/minute to 7°C/minute, and the second heating stage starts from 300°C, and is changed to a heating rate of 1°C/minute to 3°C/minute heated to the predetermined temperature. In order to make the diamond particles in the shape of the hexahedron be heated more uniformly, preferably, in the step (B), the diamond particles in the shape of the hexahedron are heated by a heating method including a multi-stage heating method to the predetermined temperature. In some other implementations, in this step (B), the heating method can adopt a temperature-holding method, that is, after heating to the predetermined temperature, the diamond particles in the shape of hexocahedron are allowed to cool at the predetermined temperature. The bottom is heated.

Preferably, in the step (B), the heating method can be combined with multi-stage temperature raising method and temperature maintaining method at the same time. Specifically, the heating method is to heat the diamond particles in the shape of hexahedron at the predetermined temperature for 5 minutes to 30 minutes after heating to the predetermined temperature by a multi-stage heating method.

In some implementations, in the step (B), the predetermined temperature may be greater than or equal to 855°C and less than 900°C; in other implementations, in the step (B), the predetermined temperature The temperature may be greater than 900°C and less than 950°C; or, in yet other implementations, in the step (B), the predetermined temperature may be greater than 950°C and less than or equal to 1000°C; or , In still other implementations, in the step (B), the predetermined temperature may be greater than 800°C and less than 850°C.

Preferably, in the step (B), the average diameter of the rounded diamond particles is 30 μm to 1150 μm, but not limited thereto. Preferably, in the step (B), the rounded diamond particles have a Feret ratio greater than 0.84.

According to the present invention, the material of the substrate may include metal or resin, but is not limited thereto. For example, the metal may include stainless steel; the resin may include melamine resins, acrylic resins, alkyd resins, polyester resins, reactive Reactive urethane resins, phenolic resins, phenolic/latex resins, epoxy resins, isocyanate resins, isocyanurate resins , polysiloxane resins (polysiloxane resins), reactive vinyl resins (reactive vinyl resins), polyethylene resins (polyethylene resins), polypropylene resins (polypropylene resins), polystyrene resins (polystyrene resins, PS resins), Phenoxy resins (phenoxy resins), polysulfone resins (polysulfone resins), acrylonitrile-butadiene-styrene resins (acrylonitrile-butadiene-styrene resins, ABS resins), polycarbonate resins (polycarbonate resins), Polyethylene polyimide resins or any combination.

According to the present invention, the bonding layer is made of polymer resin, metal or ceramics, or other bonding materials that can make the rounded diamond particles and the substrate have sufficient bonding force. The polymer resin can be a thermosetting resin or photocurable resin that can be cured by proper heating and baking or ultraviolet (UV) irradiation, or a room temperature curable resin that can be cured at room temperature . The bonding layer containing metal can be formed by electroplating, welding or sintering. For example, the metal plating layer can use electroplating nickel (or other metals) to coat and fix the rounded diamond particles on the bottom. On the base material; the metal solder is to use the high temperature vacuum furnace brazing method to melt the metal solder (usually nickel-chromium alloy) and weld the rounded diamond particles on the metal base material; metal powder can also be used through high temperature Sintering fixes the rounded diamond particles. That is to say, the rounded diamond particles are disposed on the bonding layer by curing method, electroplating method, brazing method or sintering method.

Another object of the present invention is to provide a chemical mechanical polishing pad dresser made by the method for preparing the chemical mechanical polishing pad dresser; the chemical mechanical polishing pad dresser includes: a base material, a bonding layer and a plurality of circles The rounded diamond particles are arranged on the substrate, the rounded diamond particles are embedded in the combined layer, and at least part of the rounded diamond particles protrude from the outer surface of the combined layer. The chemical mechanical polishing pad dresser can reduce or even avoid the situation that the large debris is generated on the polishing pad when dressing the polishing pad, thereby reducing the risk of blocking the flow of the polishing liquid, and reducing the risk of grinding by the chemical mechanical polishing pad dresser. After padding, a plurality of tiny protrusions are produced on the surface of the polishing pad, which can not only ensure the expected trimming effect, but also reduce the risk of scratching the wafer when the aforementioned polishing pad acts on the wafer subsequently.

According to the present invention, the arrangement of the rounded diamond particles in the binding layer can be arranged in a regular arrangement or in an irregular random arrangement according to requirements. For example, the regular arrangement may be arranged in the form of annular concentric circles, or in the form of an array, but it is not limited thereto.

Hereinafter, those skilled in the art can easily understand the advantages and effects of the present invention from the following examples. Therefore, it should be understood that the descriptions presented herein are only for illustrating the preferred embodiments and not for limiting the scope of the present invention, and that various modifications and changes may be made for implementation or application without departing from the spirit and scope of the present invention Contents of the present invention.

Reference example chemical machinery Pad Dresser

A commercially available chemical mechanical polishing pad dresser is provided: commodity model: DiaGrid ^R , manufactured by KINIK Company. The artificial diamond particles contained in the chemical mechanical polishing pad dresser of the reference example have not previously passed through the screening and heat treatment steps of the present invention, and the Ferret of these artificial diamond particles contained in the chemical mechanical polishing pad dresser of the reference example The specific ratio is 0.78.

Example 1 chemical machinery Manufacturing Method of Abrasive Pad Dresser

First, abrasive grain raw material is provided. A screening operation was carried out on the aforementioned abrasive grain raw materials, from which a plurality of artificial diamond particles in the shape of hexocahedron were selected, and the artificial diamond particles in the shape of hexocahedron had an average particle diameter of 105 μm, and the shapes were The Feret ratio of the hexahedral artificial diamond grains is 0.84.

Secondly, in the atmospheric environment of normal pressure, heat treatment is carried out to these artificial diamond grains that are hexocahedral: put these artificial diamond grains that are hexocahedral in a boiler, first heat treatment at 5° C/min heating rate from room temperature to 300°C, then, from 300°C, change to 2°C/min heating rate to 900°C; then, at 900°C, continue The man-made diamond particles in the shape of hexahedron were heated for 15 minutes, that is to say, the total heating time for heating the man-made diamond particles in the shape of hexocahedron was about 6 hours in total. After the heat treatment is completed, the temperature is naturally lowered to room temperature. These artificial diamond particles in the shape of hexahedron originally had sharp edges and angular outlines before heating, but after heating, they have been transformed into rounded artificial diamond particles with rounded outlines. The rounded synthetic diamond particles had an average particle diameter of 95 μm, and the Feret ratio of the hexocahedral synthetic diamond particles was 0.86.

Next, a metal substrate is provided, and the surface of the substrate has a bonding material layer formed of bonding material. Wherein, the bonding material layer is a thin metal layer with uniform thickness formed by solder metal.

Subsequently, the rounded artificial diamond particles are introduced through the template and embedded in the bonding material layer, and at least part of the rounded artificial diamond particles protrude from the outer surface of the bonding material layer; then, at 1006 ° C. The bonding material layer is brazed at a high temperature to form a bonding layer, so that the rounded artificial diamond particles can be firmly attached to the bonding layer, and finally the chemical mechanical polishing pad dresser is obtained. The chemical mechanical polishing pad dresser comprises a metal substrate, a bonding layer and a plurality of rounded artificial diamond particles, the bonding layer is arranged on the substrate, and the rounded synthetic diamond particles are embedded in the bonding layer, And at least part of the rounded artificial diamond particles protrude from the outer surface of the bonding layer. The main difference between the chemical mechanical polishing pad dresser of this embodiment and the reference example is whether the artificial diamond particles used have been screened out for a specific shape and Feret ratio, and whether a heat treatment step is performed. As for other technical features, such as metal base The types of materials included in the base material and the bonding layer, the respective thicknesses of the metal substrate and the bonding layer, the number and arrangement of diamond particles, and the overall dimensions of the chemical mechanical polishing pad dresser are all the same.

"The Shape of Diamond Grains"

Use a scanning electron microscope (scanning electron microscope, SEM) to observe the rounded synthetic diamond particles used in the chemical mechanical polishing pad dresser of the embodiment 1, and the rounded synthetic diamond particles used in the chemical mechanical polishing pad dresser of the reference example. Appearance of synthetic diamond particles.

Under the observation conditions after the same magnification, please refer to Fig. 1A to Fig. 1D, which are the man-made diamond particles in the shape of hexahedron in Example 1 before heating, heating to 800°C, and heating to 850°C , and reheated to 900 ° C scanning electron microscope photographs. Obviously, after the selected diamond particles with a specific shape are heated in a specific temperature range, the original sharp edges gradually become much more rounded. The shape of the diamond particles of the reference example before heating is a photo taken by a scanning electron microscope as shown in FIG. 2 .

Please refer to Fig. 3A and Fig. 3B, which are the SEM images of the rounded artificial diamond particles in Example 1 under magnification of 150 times and magnification of 1000 times, and Fig. 4 is the magnification of the artificial diamond particles in the reference example SEM image at 150X. Obviously, the artificial diamond particles obtained after the screening operation of step (A) and the heating method of step (B) of the present invention, the original sharp edges have been rounded; on the contrary, the artificial diamonds used in the reference example are It has not been treated with the screening operation of step (A) and the heating method of step (B) of the present invention, so it still has quite sharp ridges. It can be seen that the shape of diamond particles with the shape of hexahedron will indeed be rounded after being heated at a temperature of 800°C to 900°C.

"Feret ratio analysis of diamond particles"

Desktop scanner: model CanoScan FS4000US

After taking 0.5 grams of the diamond sample to be measured, spread it evenly on the measuring platform of the desktop scanner to carry out the Feret ratio analysis of the aforementioned diamond sample. The analysis results are as follows:

The feret ratio of the hexahedral artificial diamond particles used in Example 1 before heating was 0.84. After the heat treatment is completed, the Feret ratio of the rounded diamond particles in Example 1 is 0.86. In addition, the Feret ratio of the diamond particles used in the reference example was 0.78.

"Particle Size Analysis of Debris Produced by Dressing Abrasive Pads"

In order to ensure the experimental significance of the analysis, the chemical mechanical polishing pad dresser of the reference example and embodiment 1 carries out the dressing effect on the same type of polishing pad for the same time with the same grinding machine platform and grinding conditions, and the polishing pad to be dressed The resulting debris was collected and analyzed by the same method.

"Shape of Detritus"

SEM was used to observe the appearance of debris produced by the polishing pads dressed by the chemical mechanical polishing pad dressers of Example 1 and Reference Example.

Please refer to Fig. 5, which is the SEM image of the debris produced by the abrasive pad after using the chemical mechanical polishing pad dresser of embodiment 1 at a magnification of 2000 times, please refer to Fig. 6, which is the chemical mechanical polishing pad using the reference example SEM image at 1000X magnification of debris generated by a mechanical pad dresser. Obviously, the debris in Figure 5 exhibits a phenomenon of high uniformity in size, while the debris in Figure 6 presents a phenomenon of uneven size, and the size of the debris in Figure 6 is obviously larger.

"Average Particle Size and Particle Size Distribution Analysis of Debris"

With laser nanometer particle size potential analyzer (manufacturer: Malvern Panalytical (Malvern Panalytical); model: Zetasizer Nano ZS90) analyze the chemical mechanical polishing pad dresser after using embodiment 1 and reference example to dress respectively The particle size range and average particle size of the debris generated by the grinding pad, and the analysis results are listed in Table 1. As shown in the results in Table 1, compared with the reference example, the average particle size of the chips produced by the chemical mechanical polishing pad dresser of Example 1 is significantly smaller. It can thus be proved that using the chemical mechanical polishing pad dresser prepared by the present invention can indeed reduce the situation that the polishing pad produces large debris when dressing the polishing pad. Table 1 Analysis results of particle size range and average particle size of debris Particle size range of debris generated The average particle size of debris generated Example 1 28nm~190nm 79 nm Reference example 164nm~1990nm 615 nm

Compared with the existing chemical mechanical polishing pad dresser, the diamond particles used in the chemical mechanical polishing pad dresser of the present invention are firstly screened and then heated, so rounded diamond particles with round contours can be obtained. Since the rounded diamond particles are not easily broken at the junction of the crystal planes and the decrease in hardness due to heat treatment is smaller than that of the unrounded diamond particles after the same heat treatment, it is possible to make the rounded diamond particles as active abrasive particles The diamond particles have proper sharpness and higher wear resistance, so that the chemical mechanical polishing pad dresser containing it can reduce or even avoid the uneven size of the polishing pad after dressing debris and large-sized debris, while reducing the chemical mechanical polishing pad dresser when dressing the polishing pad, the risk of faster consumption of the polished polishing pad or blocking the flow of the polishing liquid, ensuring the expected dressing effect, and The risk of scratching the wafer when the polishing pad trimmed by the chemical mechanical polishing pad dresser acts on the wafer is reduced.

In addition, because the preparation method of the chemical mechanical polishing pad dresser of the present invention is mainly the pretreatment of screening and heating the diamond particles, it will not affect the arrangement of the drills in the subsequent preparation of the chemical mechanical polishing pad dresser or limit the chemical mechanical The specifications of the abrasive pad dresser, so it also has the advantage of simple manufacturing process.

Although the foregoing descriptions have set forth many features and advantages of the present invention, as well as details of the constitution and features of the present invention, these are only exemplary descriptions. All within the scope indicated by the general meaning of the patent scope of the present invention, the detailed changes made according to the principles of the present invention, especially the changes in shape, size and component arrangement, all still belong to the scope of the present invention.

none

FIG. 1A is a photograph taken by a scanning electron microscope of the hexocahedral diamond particles of Example 1 before heating. FIG. 1B is a photo taken by a scanning electron microscope heated to 800° C. of the hexahedral diamond particles of Example 1. FIG. FIG. 1C is a photo taken by a scanning electron microscope heated to 850° C. of the hexocahedral diamond particles of Example 1. FIG. FIG. 1D is a photo taken by a scanning electron microscope heated to 900° C. of the hexocahedral diamond particles of Example 1. FIG. Fig. 2 is a photograph taken by a scanning electron microscope of diamond particles of a reference example before heating. 3A is a scanning electron microscope photograph of rounded synthetic diamond particles contained in the chemical mechanical pad dresser of Example 1. FIG. FIG. 3B is an enlarged view of the framed area in FIG. 3A . FIG. 4 is a photograph taken by a scanning electron microscope of artificial diamond particles contained in a chemical mechanical polishing pad dresser of a reference example. FIG. 5 is a photograph taken by a scanning electron microscope of debris generated after dressing a polishing pad with the chemical mechanical polishing pad dresser of Example 1. FIG. FIG. 6 is a photograph taken by a scanning electron microscope of debris generated after dressing a polishing pad with a chemical mechanical polishing pad dresser of a reference example.

none.

Claims (10)

A method for preparing a chemical-mechanical polishing pad dresser, which includes the following steps: step (A): provide abrasive grain raw material, and carry out a screening operation to the abrasive grain raw material to select a plurality of diamond particles whose shape is hexahedron; step (B): heating the diamond particles whose shape is hexahedron to a predetermined temperature to obtain a plurality of rounded diamond particles; wherein, the predetermined temperature is 800°C to 1000°C; step (C): providing a a substrate, the surface of the substrate has a bonding layer; and step (D): embedding the rounded diamond particles in the bonding layer, and at least part of the rounded diamond particles protrude from the bonding layer Surface, obtain this chemical mechanical polishing pad dresser; Wherein, the preparation method of this chemical mechanical polishing pad dresser further comprises a step (M); This step (M): between this step (A) and this step (B) , carrying out a ball milling process on the diamond particles whose shape is hexahedron. The method for preparing a chemical mechanical polishing pad dresser as described in Claim 1, wherein the step (B) is carried out in an atmospheric environment. The method for preparing a chemical mechanical polishing pad dresser as described in Claim 1, wherein, in the step (B), the heating time is 4 hours to 18 hours. The method for preparing a chemical mechanical polishing pad dresser as described in Claim 1, wherein, in the step (B), the diamond particles in the shape of hexocahedron are heated to the Predetermined temperature. The method for making a chemical mechanical polishing pad dresser as described in claim 4, wherein the multi-stage heating method is a two-stage heating method, and the two-stage heating method includes a first heating stage and a second heating stage; wherein, the The first heating stage is heating to 300°C at a heating rate of 3°C/minute to 7°C/minute; the second heating stage is heating from 300°C to the predetermined temperature at a heating rate of 1°C/minute to 3°C/minute . The method for preparing a chemical mechanical polishing pad dresser as described in claim 4, wherein, in the step (B), the heating method further includes a temperature-holding method, and the temperature-holding method is continued at the predetermined temperature for 5 minutes to 30 minutes. The method for preparing a chemical mechanical polishing pad dresser as described in any one of claims 1 to 6, wherein, in the step (A), the average particle diameter of the diamond particles shaped as hexocahedral is 40 microns to 1500 microns. The method for preparing a chemical mechanical polishing pad dresser as described in any one of claims 1 to 6, wherein, in the step (B), the average diameter of the rounded diamond particles is 30 microns to 1150 microns. A kind of chemical mechanical polishing pad dresser, it is made by the preparation method of the chemical mechanical polishing pad dresser described in any one of claim item 1 to 8; Wherein, this chemical mechanical polishing pad dresser comprises: a base material, A bonding layer and a plurality of rounded diamond particles, the bonding layer is disposed on the base material, the rounded diamond particles are embedded in the bonding layer, and at least part of the rounded diamond particles protrude from the bonding layer outer surface of the layer. The chemical mechanical polishing pad dresser as claimed in claim 9, wherein the material of the base material includes metal; the material of the bonding layer includes polymer resin, metal or ceramics.

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