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TWI780118B - 用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術 - Google Patents

用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術 Download PDF

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Publication number
TWI780118B
TWI780118B TW107106750A TW107106750A TWI780118B TW I780118 B TWI780118 B TW I780118B TW 107106750 A TW107106750 A TW 107106750A TW 107106750 A TW107106750 A TW 107106750A TW I780118 B TWI780118 B TW I780118B
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TW
Taiwan
Prior art keywords
feature
protective film
deposited
substrate
deposition
Prior art date
Application number
TW107106750A
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English (en)
Chinese (zh)
Other versions
TW201842225A (zh
Inventor
尼基 朵爾
艾瑞克 Ａ 哈得森
喬治 馬踏米斯
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US15/449,799 external-priority patent/US10170324B2/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201842225A publication Critical patent/TW201842225A/zh
Application granted granted Critical
Publication of TWI780118B publication Critical patent/TWI780118B/zh

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    • H10W20/089—
    • H10P50/242—
    • H10P50/267—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
TW107106750A 2017-03-03 2018-03-01 用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術 TWI780118B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/449,799 2017-03-03
US15/449,799 US10170324B2 (en) 2014-12-04 2017-03-03 Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch

Publications (2)

Publication Number Publication Date
TW201842225A TW201842225A (zh) 2018-12-01
TWI780118B true TWI780118B (zh) 2022-10-11

Family

ID=63593128

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107106750A TWI780118B (zh) 2017-03-03 2018-03-01 用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術
TW111134903A TWI876204B (zh) 2017-03-03 2018-03-01 用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術

Family Applications After (1)

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TW111134903A TWI876204B (zh) 2017-03-03 2018-03-01 用於高深寬比圓筒狀物蝕刻之側壁保護層沉積保形的調節技術

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KR (2) KR102659567B1 (ko)
TW (2) TWI780118B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11702751B2 (en) * 2019-08-15 2023-07-18 Applied Materials, Inc. Non-conformal high selectivity film for etch critical dimension control
US11791167B2 (en) * 2020-03-31 2023-10-17 Tokyo Electron Limited Cyclic self-limiting etch process
US11171012B1 (en) * 2020-05-27 2021-11-09 Tokyo Electron Limited Method and apparatus for formation of protective sidewall layer for bow reduction
CN113808929A (zh) * 2020-06-12 2021-12-17 中微半导体设备(上海)股份有限公司 一种半导体结构的形成方法
US11417527B2 (en) * 2020-08-28 2022-08-16 Tokyo Electron Limited Method and device for controlling a thickness of a protective film on a substrate
KR102789195B1 (ko) * 2020-12-02 2025-04-01 주식회사 원익아이피에스 박막형성방법
CN112989754B (zh) * 2021-03-29 2022-06-07 武汉大学 柔性印刷电路板蚀刻工艺的多尺度耦合仿真方法
KR102587031B1 (ko) 2021-06-01 2023-10-12 충남대학교산학협력단 고종횡비 컨택홀 식각 공정에 적용 가능한 적응형 펄스 공정 장치 및 방법, 이를 구현하기 위한 프로그램이 저장된 기록매체 및 이를 구현하기 위해 매체에 저장된 컴퓨터프로그램
CN114477077B (zh) * 2022-02-11 2025-03-21 丹东华顺电子有限公司 一种硅的深槽刻蚀方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100173494A1 (en) * 2007-06-09 2010-07-08 Rolith, Inc Method and apparatus for anisotropic etching

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US9378971B1 (en) * 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9384998B2 (en) * 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9385318B1 (en) * 2015-07-28 2016-07-05 Lam Research Corporation Method to integrate a halide-containing ALD film on sensitive materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100173494A1 (en) * 2007-06-09 2010-07-08 Rolith, Inc Method and apparatus for anisotropic etching

Also Published As

Publication number Publication date
TWI876204B (zh) 2025-03-11
KR20240063062A (ko) 2024-05-10
KR102659567B1 (ko) 2024-04-19
KR102816167B1 (ko) 2025-06-02
TW202305174A (zh) 2023-02-01
KR20180101204A (ko) 2018-09-12
TW201842225A (zh) 2018-12-01

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