TWI779155B - Overcurrent protection device - Google Patents
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Abstract
一種過電流保護裝置包括一第一電極、一第二電極,及一設置在該第一電極及該第二電極間的正溫度係數(PTC)多層結構。該正溫度係數多層結構包括一接合該第一電極的第一聚合物層、一接合該第一聚合物層且包括一第二聚合物層的中間層狀單元(intermediate layered unit),及一接合並設置在該中間層狀單元及該第二電極間的第三聚合物層。 該第一聚合物層、該第二聚合物層及該第三聚合物層分別具有一第一體積電阻率、一第二體積電阻率及一第三體積電阻率,且該第二體積電阻率高於該第一體積電阻率及該第三體積電阻率。An overcurrent protection device includes a first electrode, a second electrode, and a positive temperature coefficient (PTC) multilayer structure arranged between the first electrode and the second electrode. The positive temperature coefficient multilayer structure includes a first polymer layer bonded to the first electrode, an intermediate layered unit bonded to the first polymer layer and including a second polymer layer, and a bonded And a third polymer layer is arranged between the middle layer unit and the second electrode. The first polymer layer, the second polymer layer and the third polymer layer respectively have a first volume resistivity, a second volume resistivity and a third volume resistivity, and the second volume resistivity higher than the first volume resistivity and the third volume resistivity.
Description
本發明是有關於一種過電流保護裝置,特別是指一種包含三層聚合物層的過電流保護裝置,且其中一個聚合物層夾設在另兩層聚合物層間,並具有高於另兩層聚合物層的體積電阻率的體積電阻率。 The present invention relates to an overcurrent protection device, in particular to an overcurrent protection device comprising three polymer layers, wherein one polymer layer is sandwiched between the other two polymer layers, and has a structure higher than the other two layers. The volume resistivity of the volume resistivity of the polymer layer.
一種正溫度係數(positive temperature coefficient,簡稱PTC)過電流保護裝置呈現出PTC效應,而該PTC效應使得該正溫度係數過電流保護裝置利於作為一電路保護裝置。參閱圖1,以往電路保護裝置1包括PTC聚合物層11,及兩個連接該PTC聚合物層11的兩個相反面的電極12。該PTC聚合物層11包含一包括一結晶區及一非結晶區的聚合物基質,及一分散在該聚合物基質的非結晶區域內並形成一連續的導電通路以電導通該等電極12的粒狀導電填料。該PTC效應是一種現象,即當聚合物基質的溫度升高至其熔點時,在該結晶區域內的晶體開始熔化並造成一新的非晶區域產生。隨著該新的非晶區域增加至某一程度且與原始非晶區域融合,該粒狀導電填料的導電通路將變得不連續,且該PTC聚合物材料的電阻將迅速增加,從而導致該等電極間電不連接。
A positive temperature coefficient (PTC) overcurrent protection device exhibits a PTC effect, and the PTC effect makes the positive temperature coefficient overcurrent protection device useful as a circuit protection device. Referring to FIG. 1 , a conventional
該電路保護裝置1用於保護電子設備,並且該PTC聚合物層11的聚合物基質是依據該電子設備的工作電流和工作電壓來
選擇。該PTC聚合物層11的聚合物基質通常由聚乙烯系組成物所製成。然而,由於該PTC聚合物層11與該等電極12間的黏著性相當差,使得該電路保護裝置1可能不具有期望的導電性。
The
美國專利公告第6238598號揭示一種PTC聚合物共混組合物及一電路保護裝置。該PTC聚合物共混組合物包括一未接枝聚烯烴、一接枝聚烯烴及一顆粒導電材料。該電路保護裝置包括一具有該PTC聚合物共混組合物的PTC元件,及兩個分別連接該PTC元件的兩個相反側的電極。隨著在該PTC聚合物共混組合物中的接枝聚烯烴的納入,該電路保護裝置具有相當好的電穩定性,且該PTC元件與該等電極間的黏著性良好。 US Patent No. 6238598 discloses a PTC polymer blend composition and a circuit protection device. The PTC polymer blend composition includes an ungrafted polyolefin, a grafted polyolefin and a particle conductive material. The circuit protection device includes a PTC element with the PTC polymer blend composition, and two electrodes respectively connected to two opposite sides of the PTC element. With the inclusion of grafted polyolefin in the PTC polymer blend composition, the circuit protection device has good electrical stability, and the adhesion between the PTC element and the electrodes is good.
然而,該美國專利案所揭示的電路保護裝置的某些電特性(例如體積電阻率、耐受電壓等)可以進一步地改進,以滿足工業要求。 However, some electrical characteristics (such as volume resistivity, withstand voltage, etc.) of the circuit protection device disclosed in the US patent can be further improved to meet industrial requirements.
因此,本發明之一目的,即在提供一種可以克服上述先前技術的至少一個缺點的過電流保護裝置。 Therefore, it is an object of the present invention to provide an overcurrent protection device that can overcome at least one of the disadvantages of the above-mentioned prior art.
於是,本發明過電流保護裝置包含一第一電極、一第二電極,及一正溫度係數(positive temperature coefficient,簡稱PTC)多層結構。 Therefore, the overcurrent protection device of the present invention includes a first electrode, a second electrode, and a positive temperature coefficient (positive temperature coefficient, PTC for short) multilayer structure.
該正溫度係數多層結構設置在該第一電極與該第二電極間,且包括一第一聚合物層、一中間層狀單元,及一第三聚合物層。 The positive temperature coefficient multilayer structure is disposed between the first electrode and the second electrode, and includes a first polymer layer, an intermediate layer unit, and a third polymer layer.
該第一聚合物層接合該第一電極,且包括一第一聚合物基質及一分散在該第一聚合物基質內的第一顆粒狀導電填料。該第一聚合物基質由第一聚合物混合物所製成。 The first polymer layer joins the first electrode and includes a first polymer matrix and a first granular conductive filler dispersed in the first polymer matrix. The first polymer matrix is made from a first polymer mixture.
該中間層狀單元接合該第一聚合物層,且包括一第二聚合物層。該第二聚合物層包括一第二聚合物基質及一分散在第二聚合物基質內的第二顆粒狀導電填料。第二聚合物基質由一第二聚合物混合物所製成。 The intermediate layered unit joins the first polymer layer and includes a second polymer layer. The second polymer layer includes a second polymer matrix and a second granular conductive filler dispersed in the second polymer matrix. The second polymer matrix is made of a second polymer mixture.
第三聚合物層接合並設置在該中間層狀單元與該第二電極間,且包括一第三聚合物基質及一分散在該第三聚合物基質內的第三顆粒狀導電填料。該第三聚合物基質由一第三聚合物混合物所製成。 The third polymer layer is bonded and disposed between the middle layer unit and the second electrode, and includes a third polymer matrix and a third granular conductive filler dispersed in the third polymer matrix. The third polymer matrix is made of a third polymer mixture.
該第一聚合物層、該第二聚合物層,及該第三聚合物層分別具有一第一體積電阻率、一第二體積電阻率及一第三體積電阻率,且該第二體積電阻率高於該第一體積電阻率及該第三體積電阻率。 The first polymer layer, the second polymer layer, and the third polymer layer respectively have a first volume resistivity, a second volume resistivity, and a third volume resistivity, and the second volume resistivity rate is higher than the first volume resistivity and the third volume resistivity.
本發明之功效在於:藉由控制該第二聚合物層的體積電阻率高於該第一聚合物層及該第三聚合物層的體積電阻率,本發明的過電流保護裝置表現出良好的電性質。 The effect of the present invention is: by controlling the volume resistivity of the second polymer layer to be higher than the volume resistivity of the first polymer layer and the third polymer layer, the overcurrent protection device of the present invention exhibits good performance electrical properties.
2:第一電極 2: The first electrode
3:正溫度係數多層結構 3: Positive temperature coefficient multi-layer structure
30:中間層狀單元 30: Intermediate layered unit
31:第一聚合物層 31: first polymer layer
32:第二聚合物層 32: second polymer layer
33:第三聚合物層 33: third polymer layer
34:第四聚合物層 34: fourth polymer layer
35:第五聚合物層 35: fifth polymer layer
4:第二電極 4: Second electrode
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是以往過電流保護裝置的一立體圖;圖2是本發明過電流保護裝置的第一實施例的一立體圖; 圖3是本發明過電流保護裝置的第二實施例的一立體圖;及圖4是本發明過電流保護裝置的第二實施例的一變化態樣的立體圖。 Other features and effects of the present invention will be clearly presented in the implementation manner with reference to the drawings, wherein: FIG. 1 is a perspective view of a conventional overcurrent protection device; FIG. 2 is a first embodiment of the overcurrent protection device of the present invention a stereogram of 3 is a perspective view of the second embodiment of the overcurrent protection device of the present invention; and FIG. 4 is a perspective view of a variation of the second embodiment of the overcurrent protection device of the present invention.
在本發明被詳細描述前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numerals.
參照圖2,本發明過電流保護裝置的一第一實施例包括一第一電極2、一第二電極4,及一設置在該第一電極2及該第二電極4間的正溫度係數(positive temperature coefficient,簡稱PTC)多層結構3。
Referring to Fig. 2, a first embodiment of the overcurrent protection device of the present invention comprises a
該正溫度係數多層結構3包括一第一聚合物層31、一中間層狀單元30,及一第三聚合物層33。
The
該第一聚合物層31接合該第一電極2,且包括一第一聚合物基質及一分散在該第一聚合物基質內的第一顆粒狀導電填料。該第一聚合物基質由一第一聚合物混合物所製成。
The
該中間層狀單元30接合該第一聚合物層31,且包括一第二聚合物層32。該第二聚合物層32包括一第二聚合物基質及一分散在第二聚合物基質內的第二顆粒狀導電填料。該第二聚合物基質由一第二聚合物混合物所製成。
The middle
該第三聚合物層33接合並設置在該中間層狀單元30及該第二電極4間。該第三聚合物層33包括一第三聚合物基質及一分散在該第三聚合物基質內的第三顆粒狀導電填料。該第三聚合物基質由一第三聚合物混合物所製成。
The
該第一聚合物層31、該第二聚合物層32,及該第三聚合物層33分別具有一第一體積電阻率、一第二體積電阻率及一第三體積電阻率,且該第二體積電阻率高於該第一體積電阻率及該第三體積電阻率。
The
在某些實施例中,該第二體積電阻率高於該第一體積電阻率及該第三體積電阻率至少1.4倍。 In some embodiments, the second volume resistivity is at least 1.4 times higher than the first volume resistivity and the third volume resistivity.
在本發明中,該第一聚合物混合物、該第二聚合物混合物及該第三聚合物混合物中的每一者獨立地包含一未接枝烯烴系聚合物及一接枝烯烴系聚合物。 In the present invention, each of the first polymer mixture, the second polymer mixture and the third polymer mixture independently comprises an ungrafted olefinic polymer and a grafted olefinic polymer.
該第一聚合物混合物、該第二聚合物混合物及該第三聚合物混合物中的每一者的未接枝烯烴系聚合物是高密度聚乙烯。該第一聚合物混合物、該第二聚合物混合物及該第三聚合物混合物中的每一者的接枝烯烴系聚合物包括一不飽和羧酸接枝聚烯烴。 The ungrafted olefinic polymer of each of the first polymer mixture, the second polymer mixture, and the third polymer mixture is high density polyethylene. The grafted olefinic polymer of each of the first polymer mixture, the second polymer mixture, and the third polymer mixture includes an unsaturated carboxylic acid grafted polyolefin.
在某些實施例中,以該第一聚合物混合物及該第一顆粒狀導電填料的總量計,該第一聚合物混合物的接枝烯烴系聚合物的含量範圍為19wt%至23wt%。以該第三聚合物混合物及該第三顆粒狀導電填料的總量計,該第三聚合物混合物的接枝烯烴系聚合物的含量範圍為19wt%至23wt%。 In some embodiments, based on the total amount of the first polymer mixture and the first particulate conductive filler, the content of the grafted olefin-based polymer in the first polymer mixture ranges from 19 wt % to 23 wt %. Based on the total amount of the third polymer mixture and the third granular conductive filler, the content of the grafted olefin polymer in the third polymer mixture ranges from 19wt% to 23wt%.
在某些實施例中,以該第二聚合物混合物及該第二顆粒狀導電填料的總量計,該第二聚合物混合物的接枝烯烴系聚合物的含量範圍為22wt%至25wt%。 In some embodiments, based on the total amount of the second polymer mixture and the second particulate conductive filler, the content of the grafted olefin-based polymer in the second polymer mixture ranges from 22 wt % to 25 wt %.
該第一顆粒狀導電填料、該第二顆粒狀導電填料及該第三顆粒狀導電填料中每一者例如但不限於碳黑、金屬粉末、導電陶瓷粉末,或上述任意的組合。 Each of the first granular conductive filler, the second granular conductive filler and the third granular conductive filler is, for example but not limited to, carbon black, metal powder, conductive ceramic powder, or any combination thereof.
在某些實施例中,該第一顆粒狀導電填料、該第二顆粒狀導電填料及該第三顆粒狀導電填料為碳黑。 In some embodiments, the first granular conductive filler, the second granular conductive filler and the third granular conductive filler are carbon black.
參閱圖3,說明本發明過電流保護裝置的第二實施例。本發明過電流保護裝置的第二實施例具有與該第一實施例類似的結構,不同之處在於,在該第二實施例中,該中間層狀單元30還包括兩個額外的聚合物層,也就是,一第四聚合物層34及一第五聚合物層35。
Referring to FIG. 3 , a second embodiment of the overcurrent protection device of the present invention is illustrated. The second embodiment of the overcurrent protection device of the present invention has a similar structure to the first embodiment, except that, in the second embodiment, the
在某些實施例中,該第二聚合物層32設置在該第四聚合物層34及該第五聚合物層35間,但是這些聚合物層32,34,35的排列並不限於此。在該第二實施例的一變化態樣中,該第四聚合物層34設置在該第二聚合物層32及該第五聚合物層35間(參閱圖4)。在該第二實施例的另一變化態樣中,該第五聚合物層35設置在該第二聚合物層32及該第四聚合物層34間。
In some embodiments, the
該第四聚合物層34及該第五聚合物層35中的每一者包括一由一聚合物混合物所製成的聚合物基質,及一分散在該聚合物基質內的顆粒狀導電填料。該第四聚合物層34及該第五聚合物層35的聚合物混合物及顆粒狀導電填料的合適成分可參考該第一聚合物混合物、該第二聚合物混合物及該第三聚合物混合物,以及該第一顆粒狀導電填料、該第二顆粒狀導電填料及該第三顆粒狀導電填料所定義的,因此為了簡潔起見,故不再贅述。
Each of the
該第四聚合物層34及該第五聚合物層35分別具有一第四體積電阻率及一第五體積電阻率。該第四體積電阻率及該第五體積電阻率可以高於或低於該第一體積電阻率、該第二體積電阻率及該第三體積電阻率,只要該第二體積電阻率高於該第一體積電阻率及該第三體積電阻率即可。
The
在某些實施例中,該第二體積電阻率高於該第四體積電阻率及該第五體積電阻率中的至少一者。在一示範的實施例中,該第二體積電阻率高於該第四體積電阻率及該第五體積電阻率中的至少一者至少1.4倍。 In some embodiments, the second volume resistivity is higher than at least one of the fourth volume resistivity and the fifth volume resistivity. In an exemplary embodiment, the second volume resistivity is at least 1.4 times higher than at least one of the fourth volume resistivity and the fifth volume resistivity.
在其它的實施例中,該第四體積電阻率及該第五體積電阻率中的每一者都高於該第一體積電阻率及該第三體積電阻率。在一示範的實施例中,該第二體積電阻率高於該第四體積電阻率及該第五體積電阻率中的每一者至少1.4倍,且該第四體積電阻率及該第五體積電阻率高於該第一體積電阻率及該第三體積電阻率至少1.4倍。 In other embodiments, each of the fourth volume resistivity and the fifth volume resistivity is higher than the first volume resistivity and the third volume resistivity. In an exemplary embodiment, the second volume resistivity is at least 1.4 times higher than each of the fourth volume resistivity and the fifth volume resistivity, and the fourth volume resistivity and the fifth volume resistivity The resistivity is at least 1.4 times higher than the first volume resistivity and the third volume resistivity.
值得注意的是,在該中間層狀單元30中的聚合物層的數量可根據實際需求而變化。舉例來說,除了該第二聚合物層32外,該中間層狀單元30可以僅進一步包括設置在第一聚合物層31及該第二聚合物層32間的第四聚合物層34,或包括設置在該第二聚合物層32及該第三聚合物層33間的第四聚合物層34。
It should be noted that the number of polymer layers in the middle
本發明將就以下實施例來作進一步說明,但應瞭解的是,該等實施例僅為例示說明之用,而不應被解釋為本發明實施之限制。 The present invention will be further described with reference to the following examples, but it should be understood that these examples are for illustrative purposes only, and should not be construed as limitations on the implementation of the present invention.
聚合物共混組合物的製備Preparation of polymer blend compositions
以下實施例所使用的三種聚合物共混組合物(也就是,R-H、R-M及R-L)是利用作為顆粒狀導電填料的碳黑(簡稱CB)及聚合物混合物來製備。其中,該碳黑購自Columbian Chemicals Company、型號為Raven 430UB,且具有0.95的DBP/D及0.53g/cm3的堆積密度;該聚合物混合物包括作為未接枝烯烴系聚合物的高密度聚乙烯(簡稱HDPE,購自Formosa Plastics Corp.且型號為HDPE9002)及作為接枝烯烴系聚合物的不飽和羧酸接枝聚烯烴。該不飽和羧酸接枝聚烯烴為馬來酸酐接枝-高密度聚乙烯(簡稱MA-G-HDPE)且購自Dupont,及型號為MB100D。該三種聚合物共混組合物中的每一者的HDPE、MA-G-HDPE及CB的重量百分比如表1所示。 The three polymer blend compositions (ie, RH, RM and RL) used in the following examples were prepared using carbon black (abbreviated as CB) as the particulate conductive filler and the polymer mixture. Wherein, the carbon black is purchased from Columbian Chemicals Company, the model is Raven 430UB, and has a DBP/D of 0.95 and a bulk density of 0.53g /cm ; Ethylene (referred to as HDPE, purchased from Formosa Plastics Corp. and model is HDPE9002) and unsaturated carboxylic acid grafted polyolefin as a grafted olefin polymer. The unsaturated carboxylic acid grafted polyolefin is maleic anhydride grafted-high-density polyethylene (abbreviated as MA-G-HDPE) and purchased from Dupont, and its model is MB100D. The weight percentages of HDPE, MA-G-HDPE and CB in each of the three polymer blend compositions are shown in Table 1.
將碳黑及聚合物混合物分別在Brabender混合器中配混。該配混的溫度為200℃、攪拌速度為30rpm,且配混時間為10分鐘,以獲得三種聚合物共混組合物(也就是R-H、R-M及R-L)。將該等聚合物共混組合物中的每一者置於一模具中,然後,在200℃及80kg/cm2的壓力下熱壓4分鐘,以形成一片材。將該片材移出並放置在兩個厚度為0.43mm的鍍鎳銅箔間。然後利用上述熱壓的條件將該片材及該等鍍鎳銅箔組合在一起,形成一個厚度為0.5mm的薄板。將該薄板切割成多個芯片,且每個芯片的面積為64cm2。利用鈷-60伽馬射線照射由各聚合共混組合物製成的芯片,而該鈷-60伽馬射線是由一輻射器產生且具有150kGy的總輻射劑量。使用微歐姆計測量每個芯片在25℃的溫度下的初始電阻。由各聚合物共混組合物製成的芯片的電阻的平均值及體積電阻率顯示於表1中。如表1所示,該聚合物共混組合物R-H的體積電阻率高於該聚合物 共混組合物R-M的體積電阻率,且該聚合物共混組合物R-M的體積電阻率高於該聚合物共混組合物R-L的體積電阻率。 The carbon black and polymer mixture were compounded separately in a Brabender mixer. The compounding temperature was 200° C., the stirring speed was 30 rpm, and the compounding time was 10 minutes to obtain three polymer blend compositions (ie, RH, RM and RL). Each of the polymer blend compositions was placed in a mold, and then hot-pressed at 200° C. and a pressure of 80 kg/cm 2 for 4 minutes to form a sheet. The sheet was removed and placed between two nickel-plated copper foils with a thickness of 0.43 mm. Then, the sheet and the nickel-plated copper foils were assembled together using the above hot pressing conditions to form a thin plate with a thickness of 0.5 mm. The thin plate was cut into a plurality of chips, and each chip had an area of 64 cm 2 . Chips made from each polymeric blend composition were irradiated with cobalt-60 gamma rays generated by an irradiator with a total radiation dose of 150 kGy. The initial resistance of each chip at a temperature of 25 °C was measured using a micro-ohmmeter. The average value of electrical resistance and volume resistivity of chips made from each polymer blend composition are shown in Table 1. As shown in Table 1, the volume resistivity of the polymer blend composition RH is higher than that of the polymer blend composition RM, and the volume resistivity of the polymer blend composition RM is higher than that of the polymer blend composition RM. The volume resistivity of the blend composition RL.
電路保護裝置的製備 Preparation of circuit protection device
實施例1至12及比較例1至18中的每一者的電路保護裝置是使用上述三種聚合物共混組合物R-H、R-M及R-L中至少一者來製備,以形成單層結構或多層結構(參見表2)。製備每個實施例的電路保護裝置的詳細步驟及條件描述如下。 The circuit protection devices of each of Examples 1-12 and Comparative Examples 1-18 were prepared using at least one of the above three polymer blend compositions R-H, R-M, and R-L to form a single-layer structure or a multi-layer structure (See Table 2). The detailed steps and conditions for preparing the circuit protection device of each embodiment are described below.
<實施例1><Example 1>
首先,將聚合物共混組合物R-M置於一模具中,然後,將該聚合物共混組合物R-H及該聚合物共混組合物R-M依次堆疊,也就是,將該聚合物共混組合物R-H夾設在兩種聚合物共混組合物R-M間。在200℃及80kg/cm2下熱壓4分鐘後,該兩種聚合物共混組合物R-M形成一第一聚合物層31及一第三聚合物層33,且該聚合物共混組合物R-H形成一中間層狀單元30(也就是,第二聚合物層32),而該中間層狀單元30連接至該第一聚合物層31及該第三聚合物層33,如圖2所示。該第一聚合物層31、該第二聚合物層32及該第三聚合物層33的厚度為0.64mm。
First, the polymer blend composition RM is placed in a mold, and then the polymer blend composition RH and the polymer blend composition RM are stacked in sequence, that is, the polymer blend composition RH is sandwiched between two polymer blend compositions RM. After hot pressing at 200°C and 80kg/cm 2 for 4 minutes, the two polymer blend compositions RM form a
接著,將兩個鍍鎳銅箔片(作為該第一電極2及該第二電極4)分別連接相反於該第二聚合物層32的該第一聚合物層31及該第三聚合物層33,並在200℃及80kg/cm2持續熱壓4分鐘,形成厚度為2mm的PTC聚合物積層板。將該PTC聚合物積層板切割成多個芯片,且每個芯片的面積尺寸為8mm×8mm。利用鈷-60伽馬射線照射該等芯片,且該鈷-60伽馬射線是由一輻射器產生並具有
150kGy的總輻射劑量,從而形成實施例1的多個測試電路保護裝置。
Next, two nickel-plated copper foils (as the
<實施例2至4><Examples 2 to 4>
製備實施例2至4的測試電路保護裝置的步驟及條件與該實施例1類似,而不同在於使用於該第一聚合物層31、該第二聚合物層32及該第三聚合物層33的聚合物共混組合物。應當注意的是,在實施例1至實施例4的每一者中,該第二聚合物層32的體積電阻率高於該第一聚合物層31及該第三聚合物層33的體積電阻率。
The steps and conditions for preparing the test circuit protection device of Examples 2 to 4 are similar to those of Example 1, but the difference is that the
<實施例5至12><Examples 5 to 12>
製備實施例5至12的測試電路保護裝置的步驟及條件與該實施例1類似,而不同在於實施例5至12中的每一者的中間層狀單元30包括一第四聚合物層34及一第五聚合物層35。此外,在該實施例5中,該第二聚合物層32設置在該第四聚合物層34及該第五聚合物層35間,而該第四聚合物層34及該第五聚合物層35分別連接該第一聚合物層31及該第三聚合物層33(參閱圖3)。在該實施例6至實施例12中,該第四聚合物層34設置在該第二聚合物層32及該第五聚合物層35,而該第二聚合物層32及該第五聚合物層35分別連接該第一聚合物層31及該第三聚合物層33(參閱圖4)。
The steps and conditions of preparing the test circuit protection devices of Examples 5 to 12 are similar to those of Example 1, but the difference is that the middle
該第一聚合物層31、該第二聚合物層32、該第三聚合物層33、該第四聚合物層34,及該第五聚合物層35中的每一者由表2中列出的聚合物共混組合物所製成,且具有0.39mm的厚度。
Each of the
<比較例1、比較例4及比較例7)><Comparative Example 1, Comparative Example 4 and Comparative Example 7)>
製備比較例1、比較例4及比較例7的測試電路保護裝置的步驟及條件與該實施例1類似,而不同在於該比較例1、比較例4及比較例7不具有該第二聚合物層32及該第三聚合物層33(也就是,單層結構),且兩個鍍鎳銅箔片分別連接該第一聚合物層31的兩個相反面上(參閱圖1)。此外,該第一聚合物層31的厚度為1.93mm,且由表2中列出的聚合物共混組合物所製成。
The steps and conditions for preparing the test circuit protection devices of Comparative Example 1, Comparative Example 4, and Comparative Example 7 are similar to those of Example 1, but the difference is that Comparative Example 1, Comparative Example 4, and Comparative Example 7 do not have the
<比較例2、比較例5、比較例8及比較例10至12><Comparative Example 2, Comparative Example 5, Comparative Example 8, and Comparative Examples 10 to 12>
製備比較例2、比較例5、比較例8及比較例10至12的測試電路保護裝置的步驟及條件與該實施例1類似,而不同在於比較例2、比較例5、比較例8及比較例10至12的測試電路保護裝置不具有該第二聚合物層32(也就是,雙層結構),且該第一聚合物層31及該第三聚合物層33中的每一者具有0.97mm的厚度並由表2中列出的聚合物共混組合物所製成。
The steps and conditions of preparing the test circuit protection devices of Comparative Example 2, Comparative Example 5, Comparative Example 8 and Comparative Examples 10 to 12 are similar to those of Example 1, but the difference lies in Comparative Example 2, Comparative Example 5, Comparative Example 8 and Comparative Example The test circuit protection devices of Examples 10 to 12 did not have the second polymer layer 32 (that is, a bilayer structure), and each of the
<比較例3、比較例6、比較例9及比較例13至16><Comparative Example 3, Comparative Example 6, Comparative Example 9, and Comparative Examples 13 to 16>
製備比較例3、比較例6、比較例9及比較例13至16的測試電路保護裝置的步驟及條件與該實施例1類似,而不同在於比較例3、比較例6、比較例9及比較例13至16的第二聚合物層32的體積電阻率低於該第一聚合物層31及該第三聚合物層33的體積電阻率。該等比較例的該第一聚合物層31及該第三聚合物層33中的每一者是由表2中列出的聚合物共混組合物所製成。
The steps and conditions for preparing the test circuit protection devices of Comparative Example 3, Comparative Example 6, Comparative Example 9 and Comparative Examples 13 to 16 are similar to those of Example 1, but the difference lies in Comparative Example 3, Comparative Example 6, Comparative Example 9 and Comparative Example The volume resistivity of the
<比較例17至18><Comparative Examples 17 to 18>
製備比較例17至18的測試電路保護裝置的步驟及條件與該實施例6類似,而不同在於比較例17至18的第二聚合物層32、第四聚合物層34及第五聚合物層35中的每一者的體積電阻率低於
該第一聚合物層31及該第三聚合物層33的體積電阻率。比較例17至18的該第一聚合物層31、該第二聚合物層32、該第三聚合物層33、該第四聚合物層34,及該第五聚合物層35中的每一者由表2中列出的聚合物共混組合物所製成。
The steps and conditions for preparing the test circuit protection devices of Comparative Examples 17 to 18 are similar to those of Example 6, but the difference lies in the
性能測試Performance Testing
[初始電阻測試](於室溫下的電阻)[Initial resistance test] (resistance at room temperature)
使用一微歐姆表對實施例1至12及比較例1至18中的每一個測試電路保護裝置進行電阻測試。 A resistance test was performed on each of the test circuit protection devices in Examples 1 to 12 and Comparative Examples 1 to 18 using a micro-ohmmeter.
實施例1至12及比較例1至18中的每一個測試電路保護裝置的初始電阻是在25℃進行測量。實施例1至12及比較例1至18中的每一個測試電路保護裝置的初始電阻的平均值及體積電阻率如表3所示。該體積電阻率是利用初始電阻及電阻定律計算出來的。 The initial resistance of each test circuit protection device in Examples 1 to 12 and Comparative Examples 1 to 18 was measured at 25°C. Table 3 shows the average value of initial resistance and volume resistivity of each tested circuit protection device in Examples 1 to 12 and Comparative Examples 1 to 18. The volume resistivity is calculated using the initial resistance and the law of resistance.
[擊穿測試(Breakdown Test)][Breakdown Test]
對實施例1至12及比較例1至18中的每一個測試電路保護裝置進行擊穿測試,並計算出通過該擊穿測試而未燒毀的該等測試電路保護裝置的通過率。該擊穿測試以10個循環來進行。每個循環是對測試電路保護裝置施予一定DC電壓(100V、150V及200V)及一定電流(3A、5A及7A)60秒,然後,停止施予該定DC電壓及該定電流60秒。 A breakdown test was performed on each test circuit protection device in Examples 1 to 12 and Comparative Examples 1 to 18, and the pass rate of the test circuit protection devices that passed the breakdown test without being burned was calculated. The breakdown test was performed in 10 cycles. Each cycle is to apply a certain DC voltage (100V, 150V and 200V) and a certain current (3A, 5A and 7A) to the test circuit protection device for 60 seconds, and then stop applying the constant DC voltage and the constant current for 60 seconds.
該擊穿測試的結果(n/10×100%,n表示通過擊穿測試而未燒毀的測試電路保護裝置的數量)如表3所示。 The results of the breakdown test (n/10×100%, n represents the number of test circuit protection devices that passed the breakdown test without being burned) are shown in Table 3.
從表3可以看出,比較例1至3、比較例4至6及比較例7至9的測試電路保護裝置表現出實質上相同的初始電阻及相同的體積電阻率,此表示,使用相同的聚合物共混組合物來形成單層結構或多層結構,並不會改變所得到的電路保護裝置的電阻。 It can be seen from Table 3 that the test circuit protection devices of Comparative Examples 1 to 3, Comparative Examples 4 to 6, and Comparative Examples 7 to 9 exhibit substantially the same initial resistance and the same volume resistivity, which means that using the same Blending the polymer composition to form a single layer structure or a multilayer structure does not change the electrical resistance of the resulting circuit protection device.
此外,幾乎所有實施例1至12的測試電路保護裝置都通過了擊穿測試。比較例1至18的測試電路保護裝置在200Vdc的高電壓(範圍從0%至80%)下具有相當低的通過率,此表示,比較例1至18的測試電路保護裝置容易在高壓下損壞或燒毀。 In addition, almost all of the test circuit protection devices of Examples 1 to 12 passed the breakdown test. The test circuit protection devices of Comparative Examples 1 to 18 had relatively low pass rates at a high voltage of 200Vdc (ranging from 0% to 80%), which means that the test circuit protection devices of Comparative Examples 1 to 18 were easily damaged under high voltage or burnt.
詳細地說,相較於比較例1至3的測試電路保護裝置,實施例1至3的測試電路保護裝置(也就是,該第二聚合物層32夾設在具有相當低電阻的第一聚合物層31及第三聚合物層33間)具有相當低的體積電阻率,及相當高的擊穿測試的通過率,特別是在高壓下。在實施例4及比較例4至9的測試電路保護裝置可以觀察到類似的結果。此外,相較於實施例1至4,比較例13至16的測試電路保護裝置(包含夾設在該第一聚合物層與該第三聚合物層間的該第二聚合物層)因該第一聚合物層31及該第三聚合物層33的體積電阻率高於該第二聚合物層32,而導致易於被破壞。然而,藉由納入具有體積電阻率高於該第一聚合物層31及該第三聚合物層33的體積電阻率的第二聚合物層32,該過電流保護裝置可以有效地承受擊穿。本發明申請人認為當具有相當高電阻的聚合物層在高電壓及高電流下直接接合到電極(例如,比較例10至16)時,可能發生不期望的電弧(electric arc)及閃絡(flashover),從而導致過電流保護裝置的損壞或燒毀。然而,在本內容中,由於每個具有相當高電阻的聚合物層沒有直接接觸該等電極,因此可以顯著避免不期望的電弧及閃絡現象。
In detail, compared with the test circuit protection devices of Comparative Examples 1 to 3, the test circuit protection devices of Examples 1 to 3 (that is, the
關於具有五層結構的測試電路保護裝置(即實施例5至12及比較例17至18),實施例5至12的測試電路保護裝置在200Vdc的高電壓下具有相當高的通過率,而比較例17至18的測試電路保
護裝置只有10%至50%的通過率,此表示,當該中間層狀單元30的第二聚合物層32的體積電阻率高於該第一聚合物層31及該第三聚合物層33的體積電阻率,該實施例5至12的測試電路保護裝置的擊穿測試的通過率可以顯著地增加。
Regarding the test circuit protection devices having a five-layer structure (i.e., Embodiments 5 to 12 and Comparative Examples 17 to 18), the test circuit protection devices of Embodiments 5 to 12 have a relatively high passing rate at a high voltage of 200Vdc, while the comparison The test circuit of Examples 17 to 18 guarantees
The protection device has only a pass rate of 10% to 50%, which means that when the volume resistivity of the
綜上所述,藉由控制該第二聚合物層32的體積電阻率高於該第一聚合物層31及該第三聚合物層33的體積電阻率,本發明的過電流保護裝置表現出良好的電性質。
In summary, by controlling the volume resistivity of the
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 But what is described above is only an embodiment of the present invention, and should not limit the scope of the present invention. All simple equivalent changes and modifications made according to the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. Within the scope covered by the patent of the present invention.
2:第一電極 2: The first electrode
3:正溫度係數多層結構 3: Positive temperature coefficient multi-layer structure
30:中間層狀單元 30: Intermediate layered unit
31:第一聚合物層 31: first polymer layer
32:第二聚合物層 32: second polymer layer
33:第三聚合物層 33: third polymer layer
4:第二電極 4: Second electrode
Claims (15)
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