TWI772656B - 濺鍍成膜裝置 - Google Patents
濺鍍成膜裝置 Download PDFInfo
- Publication number
- TWI772656B TWI772656B TW108122913A TW108122913A TWI772656B TW I772656 B TWI772656 B TW I772656B TW 108122913 A TW108122913 A TW 108122913A TW 108122913 A TW108122913 A TW 108122913A TW I772656 B TWI772656 B TW I772656B
- Authority
- TW
- Taiwan
- Prior art keywords
- sputtering
- target
- film
- magnet
- forming apparatus
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 137
- 230000002093 peripheral effect Effects 0.000 claims abstract description 85
- 238000005477 sputtering target Methods 0.000 claims abstract description 32
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 7
- 239000013077 target material Substances 0.000 description 27
- 239000002245 particle Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 10
- 230000008034 disappearance Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018123681 | 2018-06-28 | ||
| JP2018-123681 | 2018-06-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202014542A TW202014542A (zh) | 2020-04-16 |
| TWI772656B true TWI772656B (zh) | 2022-08-01 |
Family
ID=68984940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108122913A TWI772656B (zh) | 2018-06-28 | 2019-06-28 | 濺鍍成膜裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6959447B2 (ja) |
| KR (1) | KR102351170B1 (ja) |
| CN (1) | CN111417741B (ja) |
| TW (1) | TWI772656B (ja) |
| WO (1) | WO2020004619A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12359338B2 (en) | 2020-11-16 | 2025-07-15 | Ebara Corporation | Plate, apparatus for plating, and method of manufacturing plate |
| JP7745578B2 (ja) * | 2023-01-18 | 2025-09-29 | 株式会社アルバック | スパッタリング装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736021A (en) * | 1996-07-10 | 1998-04-07 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
| US20080110747A1 (en) * | 1999-10-08 | 2008-05-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4450472B2 (ja) * | 2000-03-08 | 2010-04-14 | 株式会社アルバック | スパッタリング装置 |
| KR100993046B1 (ko) * | 2001-11-14 | 2010-11-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합플라즈마 |
| WO2008149891A1 (ja) * | 2007-06-04 | 2008-12-11 | Canon Anelva Corporation | 成膜装置 |
| KR101305114B1 (ko) * | 2008-08-01 | 2013-09-05 | 샤프 가부시키가이샤 | 스퍼터링 장치 |
| KR20120130335A (ko) | 2010-03-01 | 2012-11-30 | 가부시키가이샤 알박 | 스퍼터링 장치 |
| JP5265811B2 (ja) * | 2010-06-03 | 2013-08-14 | 株式会社アルバック | スパッタ成膜装置 |
| JP5824072B2 (ja) * | 2011-12-27 | 2015-11-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| KR102182674B1 (ko) * | 2013-12-20 | 2020-11-26 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
-
2019
- 2019-06-28 TW TW108122913A patent/TWI772656B/zh active
- 2019-06-28 WO PCT/JP2019/025800 patent/WO2020004619A1/ja not_active Ceased
- 2019-06-28 KR KR1020207015923A patent/KR102351170B1/ko active Active
- 2019-06-28 CN CN201980006240.3A patent/CN111417741B/zh active Active
- 2019-06-28 JP JP2020527680A patent/JP6959447B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736021A (en) * | 1996-07-10 | 1998-04-07 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
| US20080110747A1 (en) * | 1999-10-08 | 2008-05-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020004619A1 (ja) | 2020-01-02 |
| KR20200083568A (ko) | 2020-07-08 |
| CN111417741B (zh) | 2022-05-10 |
| TW202014542A (zh) | 2020-04-16 |
| JPWO2020004619A1 (ja) | 2020-12-17 |
| KR102351170B1 (ko) | 2022-01-14 |
| JP6959447B2 (ja) | 2021-11-02 |
| CN111417741A (zh) | 2020-07-14 |
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