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TWI771695B - Claw, air lock chamber and host platform of plasma processing device - Google Patents

Claw, air lock chamber and host platform of plasma processing device Download PDF

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Publication number
TWI771695B
TWI771695B TW109119244A TW109119244A TWI771695B TW I771695 B TWI771695 B TW I771695B TW 109119244 A TW109119244 A TW 109119244A TW 109119244 A TW109119244 A TW 109119244A TW I771695 B TWI771695 B TW I771695B
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Taiwan
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wafer
lock chamber
air lock
soft wear
claw
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TW109119244A
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Chinese (zh)
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TW202046404A (en
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王凱麟
朱海波
左濤濤
王謙
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大陸商中微半導體設備(上海)股份有限公司
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    • H10P72/76
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H10P72/32

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明係提供一種托爪、氣鎖室及電漿處理裝置主機平臺,成對的兩個托爪與晶圓的邊緣部分接觸以承托晶圓;托爪包括軟質耐磨材料,軟質耐磨材料設置在托爪上,用於減少或避免當晶圓與托爪接觸時所產生的顆粒。本發明透過在托爪上設置軟質耐磨材料實現了托爪與晶圓的軟接觸,有效避免了晶圓與托爪硬接觸所產生的摩擦,進而能夠防止顆粒的產生,大大降低了晶圓的缺陷率。The invention provides a support claw, an air lock chamber and a host platform of a plasma processing device. The pair of two support claw contacts with the edge part of the wafer to support the wafer; the support claw includes soft wear-resistant material, which is soft and wear-resistant. Material is placed on the jaws to reduce or avoid particles generated when the wafer comes into contact with the jaws. The invention realizes the soft contact between the support claw and the wafer by arranging the soft wear-resistant material on the support claw, effectively avoiding the friction caused by the hard contact between the wafer and the support claw, thereby preventing the generation of particles and greatly reducing the wafer consumption. defect rate.

Description

托爪、氣鎖室及電漿處理裝置主機平臺Claw, air lock chamber and host platform of plasma processing device

本發明係關於半導體製造領域,特別是關於一種托爪、氣鎖室及電漿處理裝置主機平臺。The invention relates to the field of semiconductor manufacturing, in particular to a holding claw, an air lock chamber and a host platform of a plasma processing device.

現有的電漿處理裝置內的晶圓傳送路徑中常發現有顆粒(particle)污染。顆粒污染是衡量電漿處理裝置性能的重要指標之一,顆粒掉落在晶圓上會造成製程缺陷,甚至導致晶圓作廢。Particle contamination is often found in wafer transport paths within existing plasma processing apparatuses. Particle contamination is one of the important indicators to measure the performance of plasma processing equipment. Particles falling on the wafer can cause process defects and even lead to the waste of the wafer.

特別是氣鎖室(loadlock)內用於放置晶圓的托爪處是產生顆粒的主要污染源之一。氣鎖室在電漿處理裝置主機平臺中被用來為複數個製程模組(process module)提供未處理的晶圓以及從複數個製程模組接收處理過的晶圓。氣鎖室為腔體結構,並與傳輸模組(transfer module)相連,每一氣鎖室設置有複數個托爪用於放置晶圓。In particular, the claws for placing wafers in the loadlock are one of the main sources of contamination of particles. Airlocks are used in plasma processing apparatus host platforms to provide unprocessed wafers to and receive processed wafers from a plurality of process modules. The air lock chamber has a cavity structure and is connected with a transfer module. Each air lock chamber is provided with a plurality of claws for placing wafers.

如第1圖及第5圖所示,造成氣鎖室20內顆粒污染的原因在於,陶瓷材質的托爪22與晶圓10都非常硬且脆,晶圓10與托爪22的摩擦或碰撞容易產生顆粒污染。此外,電漿處理裝置主機平臺中的傳輸模組40內佈置有用於傳輸晶圓10的機械臂70(robot arm)。但是,當機械臂70在電漿去膠設備(plasma stripping equipment)內承托高溫的晶圓10後,機械臂70承托晶圓10處的O型圈71表面會黏上電漿去膠設備中的複合有機物而變黏,進而黏在晶圓10的下表面上。當機械臂70在氣鎖室20內放置晶圓10時,機械臂70向下移動,黏在晶圓10上的O型圈71與晶圓10的完全脫離會導致晶圓10彈跳從而與托爪22發生碰撞或摩擦,最終使得顆粒污染更為嚴重。As shown in FIG. 1 and FIG. 5, the reason for particle contamination in the air lock chamber 20 is that both the ceramic claws 22 and the wafer 10 are very hard and brittle, and the friction or collision between the wafer 10 and the claws 22 prone to particle pollution. In addition, a robot arm 70 for transferring the wafer 10 is arranged in the transfer module 40 in the host platform of the plasma processing apparatus. However, after the robotic arm 70 supports the wafer 10 with high temperature in the plasma stripping equipment, the surface of the O-ring 71 where the robotic arm 70 supports the wafer 10 will stick to the plasma stripping equipment. The composite organic matter in the wafer becomes sticky, and then sticks to the lower surface of the wafer 10 . When the robotic arm 70 places the wafer 10 in the air lock chamber 20 , the robotic arm 70 moves downward, and the complete separation of the O-ring 71 stuck on the wafer 10 from the wafer 10 will cause the wafer 10 to bounce and thus contact the carrier. The claws 22 collide or rub, eventually making particle contamination worse.

因此,如何減少氣鎖室內的顆粒污染源,以最佳化晶圓表面顆粒的表現,已成為業者極力發展的目標之一。Therefore, how to reduce the source of particle pollution in the airlock to optimize the performance of particles on the wafer surface has become one of the goals of the industry.

本發明的目的是提供一種托爪、氣鎖室及電漿處理裝置主機平臺,以減少氣鎖室內的顆粒污染源,最佳化晶圓表面顆粒的表現。The purpose of the present invention is to provide a holding claw, an air lock chamber and a host platform of a plasma processing device, so as to reduce the source of particle pollution in the air lock chamber and optimize the performance of particles on the wafer surface.

為達到上述目的,本發明提供了一種托爪,成對的兩個托爪與晶圓的邊緣部分接觸以承托晶圓;托爪包括軟質耐磨材料,軟質耐磨材料設置在托爪上,用於減少或避免當晶圓與托爪接觸時所產生的顆粒。In order to achieve the above purpose, the present invention provides a support claw, two pairs of support claw are in contact with the edge portion of the wafer to support the wafer; the support claw includes a soft wear-resistant material, and the soft wear-resistant material is arranged on the support claw. , used to reduce or avoid particles generated when the wafer is in contact with the jaws.

上述的托爪,其中,軟質耐磨材料為覆蓋在托爪表面的軟質耐磨塗層。In the above-mentioned support claw, the soft wear-resistant material is a soft wear-resistant coating covering the surface of the support claw.

上述的托爪,其中,軟質耐磨塗層的厚度為10μm-120μm。In the above-mentioned support claw, the thickness of the soft wear-resistant coating is 10 μm-120 μm.

上述的托爪,其中,軟質耐磨塗層透過噴塗處理得到。In the above-mentioned claws, the soft wear-resistant coating is obtained by spraying.

上述的托爪,其中,軟質耐磨材料為嵌入或貼合設置在托爪上的軟質耐磨件。In the above-mentioned support claw, wherein, the soft wear-resistant material is a soft wear-resistant piece embedded or fitted on the support claw.

上述的托爪,其中,軟質耐磨件與托爪可拆卸連接。In the above-mentioned support claw, wherein the soft wear-resistant piece is detachably connected with the support claw.

上述的托爪,其中,軟質耐磨材料為聚合物。In the above-mentioned claws, the soft wear-resistant material is a polymer.

上述的托爪,其中,聚合物為特氟龍。In the above-mentioned claws, the polymer is Teflon.

本發明進一步提供了一種氣鎖室,氣鎖室包括氣鎖室腔體及設置在氣鎖室腔體內的複數個上述的托爪,其中,成對的兩個托爪與晶圓的邊緣部分接觸以承托晶圓。The present invention further provides an air lock chamber, the air lock chamber includes an air lock chamber cavity and a plurality of the above-mentioned supporting claws arranged in the air lock chamber cavity, wherein the pair of two supporting claws and the edge part of the wafer contact to support the wafer.

本發明更進一步提供了一種電漿處理裝置主機平臺,其包括上述的氣鎖室、設備前端模組、傳輸模組及製程模組。The present invention further provides a host platform of a plasma processing device, which includes the above-mentioned air lock chamber, an equipment front-end module, a transmission module and a process module.

上述的電漿處理裝置主機平臺,其中,傳輸模組內安裝有機械臂,用於在氣鎖室與製程模組之間傳輸晶圓,機械臂上設置有O型圈以承載晶圓。In the above-mentioned host platform of the plasma processing device, a robot arm is installed in the transfer module for transferring wafers between the air lock chamber and the process module, and an O-ring is arranged on the robot arm to carry the wafer.

上述的電漿處理裝置主機平臺,其中,製程模組是電漿去膠設備。In the above-mentioned host platform of the plasma processing device, the process module is a plasma degumming device.

相對於現有技術,本發明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

本發明透過在托爪上設置軟質耐磨材料(例如特氟龍等材料)實現了托爪與晶圓的軟接觸,有效避免了晶圓與托爪直接硬接觸所產生的摩擦及碰撞,進而能夠防止顆粒的產生,大大最佳化了晶圓表面顆粒的表現。本發明可以利用噴塗等方法將軟質耐磨塗層覆蓋在氣鎖室內托爪的表面,也可以透過製作獨立的軟質耐磨件嵌入或貼合設置在托爪上,製程簡單,易於實現。The present invention realizes the soft contact between the support claw and the wafer by arranging soft wear-resistant materials (such as Teflon and other materials) on the support claw, effectively avoiding the friction and collision caused by the direct hard contact between the wafer and the support claw, and furthermore It can prevent the generation of particles and greatly optimize the performance of particles on the wafer surface. The invention can cover the surface of the support claw in the air lock chamber with the soft wear-resistant coating by spraying and other methods, and can also be embedded or fitted on the support claw by making an independent soft wear-resistant piece. The process is simple and easy to implement.

下文將結合示意圖對本發明的具體實施方式進行更詳細的描述。根據下列描述及申請專利範圍,本發明的優點及特徵將更清楚。需說明的是,附圖均採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。The specific embodiments of the present invention will be described in more detail below with reference to the schematic diagrams. The advantages and features of the present invention will become more apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

為了清楚,不描述實際一實施例的全部特徵。在下列描述中,不詳細描述公知的功能及結構,因為它們會使本發明由於不必要的細節而混亂。應當認為在任何實際一實施例的開發中,必須作出大量實施細節以實現開發者的特定目標,例如按照有關系統或有關商業的限制,由一個實施例改變為另一個實施例。另外,應當認為這種開發工作可能是複雜及耗費時間的,但是對於發明所屬技術領域通常知識者來說僅僅是常規工作。In the interest of clarity, not all features of an actual embodiment are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be recognized that in the development of any actual embodiment, numerous implementation details must be made to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with system-related or business-related constraints. In addition, it should be appreciated that such a development effort may be complex and time consuming, but would be merely routine work to one of ordinary skill in the art to which the invention pertains.

需說明的是,附圖均採用非常簡化的形式且均使用非精準的比率,僅用以方便、明晰地輔助說明本發明一實施例的目的。It should be noted that, the accompanying drawings are in a very simplified form and use imprecise ratios, and are only used to facilitate and clearly assist the purpose of explaining an embodiment of the present invention.

如第2圖所示,本發明提供了一種氣鎖室20,其包括氣鎖室腔體21及設置在其內的多對托爪22,成對的兩個托爪與晶圓的邊緣部分接觸以承托晶圓;托爪22包括軟質耐磨材料,軟質耐磨材料設置在托爪上,用於減少或避免當晶圓與托爪接觸時所產生的顆粒。在該實施例中,氣鎖室腔體21內設置有4對托爪22,可以用來在電漿處理裝置主機平臺的設備前端模組30與氣鎖室20之間以及氣鎖室20與傳輸模組40之間傳遞晶圓10時的臨時放置。氣鎖室腔體21還與真空泵23相連,用於為氣鎖室20內提供真空環境,以實現氣鎖室20內及傳輸模組40內的晶圓10可以進行交換。As shown in FIG. 2, the present invention provides an air lock chamber 20, which includes an air lock chamber cavity 21 and a plurality of pairs of claws 22 disposed therein, and the pair of two claws are connected to the edge portion of the wafer. Contact to support the wafer; the support claw 22 includes soft wear-resistant material, and the soft wear-resistant material is arranged on the support claw to reduce or avoid particles generated when the wafer is in contact with the support claw. In this embodiment, the air lock chamber cavity 21 is provided with four pairs of claws 22, which can be used between the equipment front-end module 30 of the host platform of the plasma processing apparatus and the air lock chamber 20 and between the air lock chamber 20 and the air lock chamber 20. Temporary placement when transferring wafers 10 between transfer modules 40 . The air lock chamber body 21 is also connected with a vacuum pump 23 for providing a vacuum environment in the air lock chamber 20 so that the wafers 10 in the air lock chamber 20 and the transfer module 40 can be exchanged.

托爪22的材質為陶瓷等硬質材料,以具有足夠強度對晶圓10進行支撐放置,但也相應造成了與晶圓10的硬接觸,進而導致了顆粒污染。透過在托爪22上設置軟質耐磨材料,以避免晶圓10與托爪22直接接觸,可以在不影響現有操作的情況之下實現晶圓10及托爪22的軟接觸,進而減少顆粒污染,最佳化晶圓10表面顆粒的表現,防止製程缺陷的發生。The claws 22 are made of hard materials such as ceramics, and have sufficient strength to support and place the wafer 10 , but correspondingly cause hard contact with the wafer 10 , thereby causing particle contamination. By disposing a soft wear-resistant material on the claws 22 to avoid direct contact between the wafer 10 and the claws 22, soft contact between the wafer 10 and the claws 22 can be achieved without affecting the existing operation, thereby reducing particle contamination , to optimize the performance of particles on the surface of the wafer 10 and prevent the occurrence of process defects.

在本發明所提供的能夠減少顆粒污染的氣鎖室20中,軟質耐磨材料在托爪22上的設置方式可以採用不同的實施方式,只要能夠避免托爪22及晶圓10直接硬接觸,透過設置在托爪22與晶圓10之間並與晶圓10軟接觸即可。In the air lock chamber 20 provided by the present invention capable of reducing particle contamination, the arrangement of the soft wear-resistant material on the claws 22 can be implemented in different ways, as long as direct hard contact between the claws 22 and the wafer 10 can be avoided, It can be arranged between the claws 22 and the wafer 10 and is in soft contact with the wafer 10 .

鑒於本發明所要解決的技術問題,所選擇的軟質耐磨材料只要滿足軟質耐磨特點,即實現軟質耐磨材料與晶圓10的軟接觸的一類材料皆可。例如,軟質耐磨材料可以選擇為具有軟質耐磨特點的聚合物。更進一步地,該聚合物可以選擇為價格低廉的特氟龍。具有軟質耐磨特點的特氟龍與矽片摩擦後不會產生顆粒,實驗證明晶圓10表面的顆粒數量明顯降低,達到了本發明預期的目的。In view of the technical problem to be solved by the present invention, the selected soft wear-resistant material can be any kind of material as long as it satisfies the soft wear-resistant characteristics, that is, the soft wear-resistant material realizes soft contact with the wafer 10 . For example, the soft wear material may be selected as a polymer with soft wear characteristics. Still further, the polymer can be selected as inexpensive Teflon. The Teflon with soft and wear-resistant characteristics does not generate particles after friction with the silicon wafer. Experiments show that the number of particles on the surface of the wafer 10 is significantly reduced, which achieves the intended purpose of the present invention.

軟質耐磨材料可以選擇為覆蓋在托爪22表面的軟質耐磨塗層。在如第3圖所示的實施例中,該軟質耐磨塗層可以較佳為特氟龍塗層221。該塗層可以覆蓋整個托爪22的表面,也可以是覆蓋在與晶圓10接觸的上表面,亦或者是僅在托爪22上表面僅與晶圓10接觸到的地方設置一層軟質耐磨塗層。以上方式均能達到本發明所能實現的技術效果,但是在實際加工過程中,將整個托爪22的表面覆蓋軟質耐磨塗層是更為簡便易行的方式,且在成本上的增加可以忽略不計。The soft wear-resistant material can be selected as a soft wear-resistant coating covering the surface of the claws 22 . In the embodiment shown in FIG. 3 , the soft wear-resistant coating may preferably be a Teflon coating 221 . The coating may cover the entire surface of the claws 22 , or may cover the upper surfaces in contact with the wafer 10 , or may be provided with a soft wear-resistant layer only on the upper surfaces of the claws 22 that only contact the wafer 10 . coating. The above methods can all achieve the technical effect that the present invention can achieve, but in the actual processing process, it is a simpler and easier way to cover the surface of the entire supporting claw 22 with a soft wear-resistant coating, and the increase in cost can be can be ignored.

上述實施例中軟質耐磨層的厚度並不會對本發明所能實現的技術效果產生根本性的影響。但是考慮到具體製程的限制以及實際效果與成本的平衡,軟質耐磨塗層的厚度為10μm-120μm是一個更為適宜的方案。The thickness of the soft wear-resistant layer in the above embodiment does not have a fundamental impact on the technical effect that can be achieved by the present invention. However, considering the limitations of the specific process and the balance between the actual effect and the cost, the thickness of the soft wear-resistant coating is 10μm-120μm is a more suitable solution.

對於實際加工製程而言,軟質耐磨塗層透過噴塗處理得到。在一實施例中,可以選擇在氣鎖室20內的托爪22表面噴塗一層特氟龍塗層221,以減少晶圓10表面的顆粒數量。具體可以採用以下製程步驟:For the actual processing process, the soft wear-resistant coating is obtained by spraying. In one embodiment, a Teflon coating 221 may be sprayed on the surface of the claws 22 in the air lock chamber 20 to reduce the number of particles on the surface of the wafer 10 . Specifically, the following process steps can be used:

(1)托爪22的處理(1) Handling of the claws 22

為了使托爪22表層獲得足夠的表面附著力,必須先除去待塗表面的全部油脂。具體步驟為:首先,使用有機溶劑溶解油脂並加溫至約400度使其完全揮發;然後,清潔托爪22表面,可以進一步透過應用黏接助劑(底漆)的方式來改善特氟龍塗層221同工件表層的結合能力。In order to obtain sufficient surface adhesion for the surface layer of the claws 22, all grease on the surface to be coated must be removed first. The specific steps are: first, use an organic solvent to dissolve the grease and heat it to about 400 degrees to make it completely volatilized; then, clean the surface of the claws 22, and further improve the Teflon by applying an adhesive (primer) The ability of the coating 221 to bond to the surface of the workpiece.

(2)特氟龍塗層221噴塗(2) Teflon coating 221 spraying

首先特氟龍塗層221材料均勻地分佈在溶劑中形成分散液,再將這種混合物透過高壓空氣霧化噴塗於托爪22表面。噴塗塗層材料須均勻一致。First, the Teflon coating 221 material is evenly distributed in the solvent to form a dispersion, and then the mixture is sprayed on the surface of the support claw 22 through high-pressure air atomization. The spray coating material must be uniform.

(3)乾燥(3) Drying

在烘爐中將濕的特氟龍塗層221加熱,溫度控制在100度以下,直至大部分的溶劑已蒸發。The wet Teflon coating 221 is heated in an oven controlled below 100 degrees until most of the solvent has evaporated.

(4)燒結(4) Sintering

將乾燥後的托爪22加熱至一個較高的溫度,直至一個不可逆的反應發生:特氟龍塗層221材料熔融,同黏接助劑形成網狀結構。The dried claws 22 are heated to a higher temperature, until an irreversible reaction occurs: the Teflon coating 221 material melts and forms a network structure with the adhesive agent.

透過上述方法即可獲得具有特氟龍塗層221的托爪22,有效避免晶圓10與托爪22直接接觸。且該特氟龍塗層221可以進一步透過改性處理以提高其在實際應用過程的耐磨性。Through the above method, the claws 22 with the Teflon coating 221 can be obtained, which effectively avoids the direct contact between the wafer 10 and the claws 22 . And the Teflon coating 221 can be further modified to improve its wear resistance in practical application.

軟質耐磨材料可以選擇設計為一個具有一定形狀結構的立體單獨部件,該軟質耐磨件可以透過嵌入或貼合等方式設置在托爪22上。在如第4圖所示的實施例中,在托爪22上插入一個軟質耐磨件222,該軟質耐磨件222頂端從托爪22上端面凸出以與晶圓10直接接觸並對其支撐。可選地,該軟質耐磨件222是特氟龍件。該方法製作比較簡單,不需要將整個托爪22零件進行鍍層。The soft wear-resistant material can be optionally designed as a three-dimensional separate component with a certain shape and structure, and the soft wear-resistant material can be arranged on the support claw 22 by means of embedding or fitting. In the embodiment shown in FIG. 4 , a soft wear-resistant piece 222 is inserted on the claw 22 , and the top end of the soft wear-resistant piece 222 protrudes from the upper end face of the claw 22 to directly contact the wafer 10 and align it with the wafer 10 . support. Optionally, the soft wear piece 222 is a Teflon piece. This method is relatively simple to manufacture, and does not need to coat the entire part of the supporting claw 22 .

例如,可以在托爪22上開設一凹槽結構,將形狀與該凹槽配合的軟質耐磨件插入該凹槽中並與托爪22固定連接,同時該軟質耐磨件的一部分從凹槽中凸出出來以對晶圓10進行支撐,因而可以避免該托爪22與晶圓10的直接接觸。For example, a groove structure can be formed on the support claw 22, and a soft wear-resistant piece with a shape matching the groove is inserted into the groove and fixedly connected with the support claw 22, and a part of the soft wear-resistant piece is removed from the groove. The center protrudes out to support the wafer 10 , so that direct contact between the claws 22 and the wafer 10 can be avoided.

又例如,可以將軟質耐磨件黏貼或貼合固定在托爪22的表面,以使托爪22不與晶圓10直接接觸。進一步地,為了在使用一段時間後的更換,所述軟質耐磨件與托爪22可拆卸連接。For another example, a soft wear-resistant member may be pasted or fixed on the surface of the support claw 22 so that the support claw 22 does not directly contact the wafer 10 . Further, for replacement after a period of use, the soft wear-resistant parts are detachably connected to the claws 22 .

根據本發明的技術概念,可以將本發明所提出的解決氣鎖室20內顆粒污染的技術思路應用於整個電漿處理裝置主機平臺的其他位置中,只要是由於摩擦或碰撞導致的顆粒污染源,在設置軟質耐磨材料後仍能滿足原始技術要求,均可以採用本發明所提供的技術思路實現。According to the technical concept of the present invention, the technical idea of solving the particle contamination in the air lock chamber 20 proposed by the present invention can be applied to other positions on the host platform of the entire plasma processing device, as long as it is the source of particle contamination caused by friction or collision, After the soft wear-resistant material is set, the original technical requirements can still be met, which can be realized by using the technical ideas provided by the present invention.

如第5圖所示,本發明還進一步提供了一種包含上述氣鎖室20的電漿處理裝置主機平臺,該主機平臺包括設備前端模組30、氣鎖室20、傳輸模組40以及複數個製程模組50,例如製程模組50是電漿去膠設備。晶圓10被送入大氣環境中並被放置在設備前端模組30上。隨後,晶圓10需要被傳送到氣鎖室20中,氣鎖室20的功能是從大氣環境向真空環境傳送晶圓10或者反向傳送。維持在真空環境下的傳輸模組40內安裝有機械臂70,該機械臂70用於將待處理晶圓10從氣鎖室20內取出,並透過位於傳輸模組40與各個處理腔50之間的門閥60將晶圓10加載到複數個製程模組50中,對待處理晶圓10進行處理(例如蝕刻/光刻膠剝除/化學氣相沉積等)。待晶圓10處理完成後,機械臂70再把處理完的晶圓10從製程模組50內取出,將其透過氣鎖室20傳送到外界大氣環境中。As shown in FIG. 5 , the present invention further provides a host platform of a plasma processing device including the above-mentioned air lock chamber 20 . The host platform includes a device front-end module 30 , an air lock chamber 20 , a transmission module 40 and a plurality of The process module 50, for example, the process module 50 is a plasma stripping device. Wafer 10 is brought into the atmosphere and placed on equipment front end module 30 . Subsequently, the wafer 10 needs to be transferred into the air lock chamber 20, the function of which is to transfer the wafer 10 from the atmospheric environment to the vacuum environment or vice versa. A robot arm 70 is installed in the transfer module 40 maintained in a vacuum environment, and the robot arm 70 is used to take out the wafer 10 to be processed from the air lock chamber 20 and pass through the space between the transfer module 40 and each processing chamber 50 . The gate valve 60 between them loads the wafers 10 into a plurality of process modules 50, and processes the wafers 10 to be processed (eg, etching/resist stripping/chemical vapor deposition, etc.). After the wafer 10 is processed, the robot arm 70 takes out the processed wafer 10 from the process module 50 , and transmits the processed wafer 10 to the outside atmosphere through the air lock chamber 20 .

具體地,氣鎖室20具有兩個不會同時打開的門閥60,其中一個門閥60與設備前端模組30連通,另一個門閥60與傳輸模組40連通。當設備前端模組30側的門閥60打開時,氣鎖室20維持在大氣環境,氣鎖室20內及設備前端模組30內的晶圓10可以進行交換。當傳輸模組40側的門閥60打開時,氣鎖室20透過真空泵23維持在真空環境,氣鎖室20內及傳輸模組40內的晶圓10可以進行交換。Specifically, the air lock chamber 20 has two gate valves 60 that cannot be opened at the same time, wherein one gate valve 60 communicates with the equipment front-end module 30 , and the other gate valve 60 communicates with the transmission module 40 . When the gate valve 60 on the equipment front-end module 30 side is opened, the air lock chamber 20 is maintained in the atmospheric environment, and the wafers 10 in the air lock chamber 20 and the equipment front-end module 30 can be exchanged. When the gate valve 60 on the transfer module 40 side is opened, the air lock chamber 20 is maintained in a vacuum environment by the vacuum pump 23, and the wafers 10 in the air lock chamber 20 and the transfer module 40 can be exchanged.

本發明所提供的電漿處理裝置主機平臺中的氣鎖室20內用於放置晶圓10的托爪22表面設置軟質耐磨材料,以避免晶圓10與托爪22直接接觸。透過在托爪22上設置軟質耐磨材料(例如特氟龍等材料)實現了托爪22與晶圓10的軟接觸,有效避免了晶圓10與托爪22硬接觸所產生的摩擦,進而能夠防止顆粒的產生,大大最佳化晶圓10表面顆粒的表現。此外,也避免了機械臂70從離子體去膠設備內承托高溫的晶圓10後,機械臂70承托晶圓10處的O型圈71變黏加重晶圓10與托爪22之間摩擦及碰撞的問題。In the air lock chamber 20 in the host platform of the plasma processing apparatus provided by the present invention, soft wear-resistant material is provided on the surface of the claw 22 for placing the wafer 10 to avoid direct contact between the wafer 10 and the claw 22 . By arranging a soft wear-resistant material (such as Teflon or the like) on the holding claw 22, the soft contact between the holding claw 22 and the wafer 10 is realized, which effectively avoids the friction caused by the hard contact between the wafer 10 and the holding claw 22, and further The generation of particles can be prevented, and the performance of the particles on the surface of the wafer 10 can be greatly optimized. In addition, after the robot arm 70 supports the high-temperature wafer 10 from the plasma debonding equipment, the O-ring 71 at the position where the robot arm 70 supports the wafer 10 becomes sticky and heavy between the wafer 10 and the holding claw 22 . Friction and collision issues.

儘管本發明的內容已經透過上述較佳實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在發明所屬技術領域通常知識者閱讀了上述內容後,對於本發明的多種修改及替代都將是顯而易見的。因此,本發明的保護範圍應由所附之申請專利範圍來界定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be construed as limiting the present invention. Various modifications and substitutions to the present invention will become apparent to those of ordinary skill in the art to which the invention pertains after reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

10:晶圓 20:氣鎖室 21:氣鎖室腔體 22:托爪 221:特氟龍塗層 222:軟質耐磨件 23:真空泵 30:設備前端模組 40:傳輸模組 50:製程模組 60:門閥 70:機械臂 71:O型圈10: Wafer 20: Air lock room 21: air lock chamber 22: Claws 221: Teflon coating 222: Soft wear parts 23: Vacuum pump 30: Equipment front-end module 40: Transmission module 50: Process module 60: Gate valve 70: Robotic Arm 71: O-ring

第1圖為現有的電漿處理裝置的氣鎖室出現顆粒污染的原理示意圖; 第2圖為本發明氣鎖室一較佳實施例的結構示意圖; 第3圖為本發明托爪上軟質耐磨材料設置方式的一較佳實施例的結構示意圖; 第4圖為本發明托爪上軟質耐磨材料設置方式的另一較佳實施例的結構示意圖; 第5圖為本發明電漿處理裝置主機平臺的一較佳實施例的結構示意圖。Figure 1 is a schematic diagram of the principle of particle contamination in the air lock chamber of the existing plasma processing device; Figure 2 is a schematic structural diagram of a preferred embodiment of an air lock chamber of the present invention; Figure 3 is a schematic structural diagram of a preferred embodiment of the arrangement of the soft wear-resistant material on the claws of the present invention; Figure 4 is a schematic structural diagram of another preferred embodiment of the arrangement of the soft wear-resistant material on the claws of the present invention; FIG. 5 is a schematic structural diagram of a preferred embodiment of the host platform of the plasma processing apparatus of the present invention.

22:托爪 22: Claws

221:特氟龍塗層 221: Teflon coating

Claims (11)

一種氣鎖室,該氣鎖室包括一氣鎖室腔體及設置在該氣鎖室腔體內的複數個托爪,其中,成對的兩個該托爪與一晶圓的邊緣部分接觸以承托該晶圓;該托爪包括一軟質耐磨材料,該軟質耐磨材料設置在該托爪上,用於減少或避免當該晶圓與該托爪接觸時所產生的顆粒。 An air lock chamber, the air lock chamber includes an air lock chamber cavity and a plurality of claws arranged in the air lock chamber cavity, wherein two pairs of the claws are in contact with the edge part of a wafer to support supporting the wafer; the supporting claw includes a soft wear-resistant material, and the soft wear-resistant material is arranged on the supporting claw to reduce or avoid particles generated when the wafer is in contact with the supporting claw. 如請求項1所述之氣鎖室,其中該軟質耐磨材料為覆蓋在該托爪表面的一軟質耐磨塗層。 The air lock chamber of claim 1, wherein the soft wear-resistant material is a soft wear-resistant coating covering the surface of the claw. 如請求項2所述之氣鎖室,其中該軟質耐磨塗層的厚度為10μm-120μm。 The air lock chamber according to claim 2, wherein the thickness of the soft wear-resistant coating is 10 μm-120 μm. 如請求項2所述之氣鎖室,其中該軟質耐磨塗層透過噴塗處理得到。 The air lock chamber of claim 2, wherein the soft wear-resistant coating is obtained by spraying. 如請求項1所述之氣鎖室,其中該軟質耐磨材料為嵌入或貼合設置在該托爪上的一軟質耐磨件。 The air lock chamber according to claim 1, wherein the soft wear-resistant material is a soft wear-resistant piece embedded in or attached to the claw. 如請求項5所述之氣鎖室,其中該軟質耐磨件與該托爪可拆卸連接。 The air lock chamber as claimed in claim 5, wherein the soft wear-resistant member is detachably connected to the claw. 如請求項1所述之氣鎖室,其中該軟質耐磨材料為一聚合物。 The air lock chamber of claim 1, wherein the soft wear-resistant material is a polymer. 如請求項7所述之氣鎖室,其中該聚合物為特氟龍。 The air lock chamber of claim 7, wherein the polymer is Teflon. 一種電漿處理裝置主機平臺,其包括如請求項1~8中任一項所述之一氣鎖室、一設備前端模組、一傳輸模組及一製程模組。 A host platform for a plasma processing device, comprising an air lock chamber as described in any one of claims 1 to 8, an equipment front-end module, a transmission module and a process module. 如請求項9所述之電漿處理裝置主機平臺,其中該傳輸模組 內安裝有一機械臂,用於在該氣鎖室與該製程模組之間傳輸一晶圓,該機械臂上設置有一O型圈以承載該晶圓。 The plasma processing device host platform of claim 9, wherein the transmission module A robotic arm is installed inside for transferring a wafer between the air lock chamber and the process module, and an O-ring is arranged on the robotic arm to carry the wafer. 如請求項9所述之電漿處理裝置主機平臺,其中該製程模組包括一電漿去膠設備。The plasma processing device host platform of claim 9, wherein the process module includes a plasma degumming device.
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CN112908911A (en) * 2021-01-27 2021-06-04 江苏润阳世纪光伏科技有限公司 Method for improving edge pollution of battery piece and reducing fragment rate
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181095A1 (en) * 2003-07-11 2006-08-17 Bonora Anthony C Ultra low contact area end effector
US20090093906A1 (en) * 2007-10-04 2009-04-09 Asm Japan K.K. Position sensor system for substrate transfer robot
US20170117170A1 (en) * 2015-10-22 2017-04-27 Lam Research Corporation Front Opening Ring Pod

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020065984A (en) * 2001-02-08 2002-08-14 삼성전자 주식회사 Apparatus of transfering wafer with chuck
JP2004095942A (en) * 2002-09-02 2004-03-25 Kokusai Electric Semiconductor Service Inc Wafer cassette
JP4205405B2 (en) * 2002-11-19 2009-01-07 富士通マイクロエレクトロニクス株式会社 Transport adjustment system and transport adjustment method
KR200414793Y1 (en) * 2006-02-15 2006-04-25 (주)상아프론테크 Wafer support lathe
US20090200250A1 (en) * 2008-02-07 2009-08-13 Multimetrixs, Llc Cleanliness-improved wafer container
KR101553709B1 (en) * 2008-11-14 2015-09-17 주성엔지니어링(주) Load-lock chamber for semiconductor device fabrication and apparatus for manufacturing semiconductor device using the same
CN201374321Y (en) * 2009-02-26 2009-12-30 北京北方微电子基地设备工艺研究中心有限责任公司 Wafer frame cassette and semiconductor processing device
CN102610547A (en) * 2011-01-25 2012-07-25 家登精密工业股份有限公司 Front opening wafer box configured with inflatable support member module
JP2014154720A (en) * 2013-02-08 2014-08-25 Tokyo Electron Ltd Processed body holding member, carrier device and processing unit
CN204144231U (en) * 2014-10-29 2015-02-04 中芯国际集成电路制造(北京)有限公司 Brilliant boat
KR200488775Y1 (en) * 2017-07-07 2019-03-18 (주)슬러번 Blade for transferring wafer
CN208923074U (en) * 2018-10-26 2019-05-31 长鑫存储技术有限公司 Transmit arm

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181095A1 (en) * 2003-07-11 2006-08-17 Bonora Anthony C Ultra low contact area end effector
US20090093906A1 (en) * 2007-10-04 2009-04-09 Asm Japan K.K. Position sensor system for substrate transfer robot
US20170117170A1 (en) * 2015-10-22 2017-04-27 Lam Research Corporation Front Opening Ring Pod

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