TWI770742B - Light sensor - Google Patents
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- TWI770742B TWI770742B TW109146771A TW109146771A TWI770742B TW I770742 B TWI770742 B TW I770742B TW 109146771 A TW109146771 A TW 109146771A TW 109146771 A TW109146771 A TW 109146771A TW I770742 B TWI770742 B TW I770742B
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Abstract
Description
本發明是有關一光感測器,特別是關於一種降低底噪的光感測器。 The present invention relates to a light sensor, and more particularly, to a light sensor with reduced noise floor.
圖1顯示習知的光感測器10的剖面圖,光感測器10可以是例如近接感測器(proximity sensor),用來偵測物體的接近。光感測器10包括一基板12、一光源模組14、一擋牆16及一感測模組18。光源模組14包含一發光元件142及一可透光封裝體144,其中可透光封裝體144覆蓋發光元件142。發光元件142可以是垂直腔面發射雷射器(Vertical-Cavity Surface-Emitting Laser;VCSEL)或發光二極體(Light-Emitting Diode;LED),發光元件142是設置在基板12上。感測模組18包括一感測晶片182、多條打線(bonding wire)184及一可透光封裝體186,其中可透光封裝體186覆蓋感測晶片182及多條打線184。感測晶片182用以感測光線。多條打線184連接感測晶片182及基板12。感測晶片182及基板12上的電路可以透過多條打線184傳遞信號。在理想狀態下,發光元件142發出的光線只會從可透光封裝體144中往上射出,例如圖1中的光線L1所示。然而,發光元件142發出的部份光線L2仍可能從可透光封裝體144的側邊射出,這些從可透光封裝體144側邊射出的光線L2被稱為內漏光。如果內漏光進入可透光封裝體186,會形成底噪(Air Cross-Talk;ACT)影響感測晶片182的準確度。因此,光源模組14與感測模組18之間會設置一個不透光的擋牆16來防止內漏光進入感測模組18以降低底噪。
FIG. 1 shows a cross-sectional view of a
然而,要增加擋牆16需要增加製程步驟,這不只導致製程複雜度提升,也增加製程的時間。此外,擋牆16的應力(stress)也可能造成可透光封裝體144及186損傷,進而降低良率(yield)。
However, to increase the
本發明的目的之一,在於提出一種減少製程複雜度的光感測器。 One of the objectives of the present invention is to provide a photo sensor with reduced process complexity.
本發明的目的之一,在於提出一種降低底噪的光感測器。 One of the objectives of the present invention is to provide a light sensor with a reduced noise floor.
根據本發明,一種光感測器包括一基板、一光源模組、一感測晶片及一可透光封裝體。該基板具有一表面。該光源模組設置在該表面上,用以提供一第一光線。該感測晶片設置在該表面上,用以感測進入該光感測器的第二光線。該可透光封裝體設置在該表面上且覆蓋該感測晶片,該可透光封裝體與該光源模組之間具有一間距。該可透光封裝體靠近該光源模組的一側具有一第一斜面及一與該第一斜面相連的第二斜面。該第一斜面與該第二斜面之間有一轉折點,該第一斜面在該基板及該轉折點之間,該第二斜面在該轉折點及該可透光封裝體的頂部之間。該第一斜面與垂直於該表面的法線之間具有一第一傾斜角,該第二斜面與該法線之間具有一第二傾斜角。該第一傾斜角與該第二傾斜角為正值,該第二傾斜角大於該第一傾斜角。 According to the present invention, a light sensor includes a substrate, a light source module, a sensing chip, and a light-transmitting package. The substrate has a surface. The light source module is arranged on the surface to provide a first light. The sensing chip is disposed on the surface for sensing the second light entering the light sensor. The transparent package body is disposed on the surface and covers the sensing chip, and there is a gap between the transparent package body and the light source module. One side of the transparent package body close to the light source module has a first inclined surface and a second inclined surface connected with the first inclined surface. There is a turning point between the first slope and the second slope, the first slope is between the substrate and the turning point, and the second slope is between the turning point and the top of the transparent package. There is a first inclination angle between the first inclined plane and the normal line perpendicular to the surface, and a second inclination angle between the second inclined plane and the normal line. The first inclination angle and the second inclination angle are positive values, and the second inclination angle is greater than the first inclination angle.
本發明的光感測器無需擋牆,因此可以減少製程複雜度並有助於提高製程的良率。該可透光封裝體靠近該光源模組具有二段式的斜面結構以減少進入該可透光封裝體的內漏光,進而降低該感測晶片的底噪。 The photo sensor of the present invention does not need a blocking wall, so the complexity of the process can be reduced and the yield of the process can be improved. The light-transmitting package body has a two-segment inclined surface structure close to the light source module to reduce internal light leakage entering the light-transmitting package body, thereby reducing the noise floor of the sensing chip.
10:光感測器 10: Light sensor
12:基板 12: Substrate
14:光源模組 14: Light source module
142:發光元件 142: Light-emitting element
144:可透光封裝體 144: light-transmitting package
16:擋牆 16: Retaining Wall
18:感測模組 18: Sensing module
182:感測晶片 182: Sensing chip
184:打線 184: Wire
186:可透光封裝體 186: transparent package
20:光感測器 20: Light sensor
22:基板 22: Substrate
222:表面 222: Surface
24:光源模組 24: Light source module
242:發光元件 242: Light-emitting element
244:可透光封裝體 244: light-transmitting package
26:感測模組 26: Sensing module
262:感測晶片 262: Sensing chip
264:打線 264: Wire
266:可透光封裝體 266: transparent package
2662:第一斜面 2662: First Bevel
2664:第二斜面 2664: Second Bevel
2666:轉折點 2666: Turning Point
28:法線 28: Normal
30:能量分佈 30: Energy Distribution
302:位置 302: Location
G1:間距 G1: Gap
H1:距離 H1: Distance
L1:光線 L1: light
L2:光線 L2: light
L3:光線 L3: Light
θ1:第一傾斜角 θ1: first tilt angle
θ2:第二傾斜角 θ2: Second tilt angle
圖1顯示習知的光感測器的剖面圖。 FIG. 1 shows a cross-sectional view of a conventional photosensor.
圖2顯示本發明的光感測器的剖面圖。 FIG. 2 shows a cross-sectional view of the photo sensor of the present invention.
圖3說明圖2如何避免內漏光影響感測晶片。 FIG. 3 illustrates how FIG. 2 prevents internal light leakage from affecting the sensing chip.
圖2顯示本發明的光感測器20的剖面圖。本發明的光感測器20可以作為近接感測器(Proximity Sensor;PS)及環境光感測器(Ambient Light Sensor;ALS),但本發明不限於此。圖2的光感測器20包括一基板22、一光源模組24及一感測模組26,其中光源模組24及感測模組26是設置在基板22的表面222上。光源模組24包含一發光元件242及一可透光封裝體244。發光元件242設置在表面222上,用以提供光線L1。發光元件242可以是但不限於VCSEL或LED。可透光封裝體244設置在表面222上且覆蓋發光元件242。感測模組26設置在光源模組24的X方向上。感測模組26包括一感測晶片262、至少一條打線264及一可透光封裝體266。感測晶片262設置在表面222上,用以感測光線L3。在一實施例中,光線L3可以是光線L1的反射光線或是光感測器20周遭的環境光。多條打線264連接感測晶片262及基板22。感測晶片262及基板22上的電路可以透過多條打線264傳遞信號。可透光封裝體266設置在表面222上且覆蓋感測晶片262及多條打線264。可透光封裝體266與光源模組24之間具有一間距G1。在一實施例中,間距G1為0.3mm~0.5mm,但本發明不限於此。可透光封裝體266靠近光源模組24的一側具有一第一斜面2662及一第二斜面2664,且第一斜面2662與第二斜面2664經由一轉折點2666相連。第一斜面2662在基板22及轉折點2666之間。第二斜面2664在轉折點2666及可透光封裝體266的頂部之間。第一斜面2662與垂直於表面222的法線28之間具有一第一傾斜角θ1。第二斜面2664與法線28之間具有一第二傾斜角θ2。第一傾斜角θ1與第二傾斜角θ2皆為正值,且第二傾斜角θ2大於第一傾斜角θ1。在一實施例中,第一傾斜角θ1為4°~6°,第二傾斜角θ2為50°~80°,轉折點2666與表面222的距離H1為0.056mm~0.146mm,但本發明不限於此。打線264的一端位於感測晶片262與第一斜面2662之間,另一端連接感測晶片262上靠近該第一斜面的接點。
FIG. 2 shows a cross-sectional view of the
圖3說明圖2如何減少內漏光進入可透光封裝體266。發光元件242發出的光線L1在可透光封裝體244中傳遞時,部分光線L2可能從可透光封裝體244的側邊射出,如圖3所示,這些從可透光封裝體244側邊射出的光線L2被稱為內漏光。透過設備或光學模擬,可以得到光源模組24的內漏光在X方向上且在可透光封裝體266的邊緣處的能量分佈30。請注意,圖3中,能量分佈30僅係為說明內漏光的能量分佈,能量分佈30並非是一個實體的物件。在能量分佈30中,顏色越深代表內漏光的能量越大。在可透光封裝體266的邊緣處的Y方向上,位置302為內漏光能量的最大值所在的位置。可透光封裝體266的轉折點2666在Y方向的位置(也就是高度)低於能量分佈30中能量最大值在Y方向的位置302。因此,內漏光的最大能量不會從第一斜面2662進入可透光封裝體266。另一方面,由於第二斜面2664具有較大的傾斜角,有助於反射掉更多的光線L2,可以達到儘量避免感測晶片262感測到光線L2的效果。換言之,本發明可以降低進入可透光封裝體266的內漏光,進而降低感測晶片262的底噪(ACT)。
FIG. 3 illustrates how FIG. 2 reduces internal leakage of light into the light
在本發明的光感測器20中,第一斜面2662的第一傾斜角θ1、第二斜面2664的第二傾斜角θ2、可透光封裝體266與光源模組24之間的間距G1以及轉折點2666與表面222的距離H1等參數會影響感測晶片262的底噪。第一傾斜角θ1與第二傾斜角θ2越大,感測晶片262的底噪越小。間距G1越大,感測晶片262的底噪越小。距離H1越小,感測晶片262的底噪越小。
In the
在圖2的實施例中,感測晶片262靠近光源模組24的一側有打線264連接。在其他實施例中,感測晶片262靠近光源模組24的一側也可以不設置打線264,在此情形下,第一傾斜角θ1與第二傾斜角θ2可以被加大以進一步降低底噪。
In the embodiment of FIG. 2 , the side of the
在圖2的實施例中,可透光封裝體266只有二個斜面2662及2664,但在其他實施例中,可透光封裝體266也可以有三個或以上的斜面。
In the embodiment of FIG. 2 , the
以上所述僅是本發明的實施例而已,並非對本發明做任何形式上的限制,雖然本發明已以實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。 The above descriptions are only the embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field, Within the scope of not departing from the technical solution of the present invention, when the technical content disclosed above can be used to make some changes or modifications to equivalent embodiments with equivalent changes, but any content that does not depart from the technical solution of the present invention, according to the technical essence of the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solutions of the present invention.
20:光感測器 20: Light sensor
22:基板 22: Substrate
222:表面 222: Surface
24:光源模組 24: Light source module
242:發光元件 242: Light-emitting element
244:可透光封裝體 244: light-transmitting package
26:感測模組 26: Sensing module
262:感測晶片 262: Sensing chip
264:打線 264: Wire
266:可透光封裝體 266: transparent package
2662:第一斜面 2662: First Bevel
2664:第二斜面 2664: Second Bevel
2666:轉折點 2666: Turning Point
28:法線 28: Normal
G1:間距 G1: Gap
H1:距離 H1: Distance
L1:光線 L1: light
L3:光線 L3: Light
θ1:第一傾斜角 θ1: first tilt angle
θ2:第二傾斜角 θ2: Second tilt angle
Claims (8)
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| CN202110099410.6A CN112880817B (en) | 2020-09-28 | 2021-01-25 | Light Sensor |
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| US202063084533P | 2020-09-28 | 2020-09-28 | |
| US63/084,533 | 2020-09-28 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0653654A1 (en) * | 1993-11-09 | 1995-05-17 | Hewlett-Packard Company | Optical detectors and sources with merged holographic optical elements suitable for optoelectronic interconnects |
| CN105895595A (en) * | 2015-02-13 | 2016-08-24 | 台医光电科技股份有限公司 | Optical sensing module, optical sensing accessory and optical sensing device |
| US20180114875A1 (en) * | 2016-10-24 | 2018-04-26 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Optical sensor module and a wearable device including the same |
| TW202004457A (en) * | 2018-05-29 | 2020-01-16 | 義明科技股份有限公司 | Optical sensing module |
-
2020
- 2020-12-30 TW TW109146771A patent/TWI770742B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0653654A1 (en) * | 1993-11-09 | 1995-05-17 | Hewlett-Packard Company | Optical detectors and sources with merged holographic optical elements suitable for optoelectronic interconnects |
| CN105895595A (en) * | 2015-02-13 | 2016-08-24 | 台医光电科技股份有限公司 | Optical sensing module, optical sensing accessory and optical sensing device |
| US20180114875A1 (en) * | 2016-10-24 | 2018-04-26 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Optical sensor module and a wearable device including the same |
| TW202004457A (en) * | 2018-05-29 | 2020-01-16 | 義明科技股份有限公司 | Optical sensing module |
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