TWI770466B - Three-dimensional surface detection method and semiconductor detection equipment - Google Patents
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本發明涉及一種檢測方法及檢測設備,尤其涉及一種立體表面檢測方法及半導體檢測設備。 The present invention relates to a detection method and detection equipment, in particular to a three-dimensional surface detection method and semiconductor detection equipment.
現有的半導體檢測設備及其檢測方法在對一電子元件的環側面進行缺陷檢測時,現有半導體檢測設備需以多個視覺單元來對電子元件的環側面不同部位進行對位與取像,但上述的檢測方法顯然過於費時。再者,現有的半導體檢測設備及其檢測方法所能檢測的電子元件類型也有其侷限性存在,難以符合種類逐日增多的各式電子元件。 When the existing semiconductor inspection equipment and its inspection method are used for defect inspection on the ring side of an electronic component, the existing semiconductor inspection equipment needs to use a plurality of vision units to align and image different parts of the ring side of the electronic component, but the above The detection method is obviously too time-consuming. Furthermore, the types of electronic components that can be detected by the existing semiconductor testing equipment and its testing methods also have limitations, and it is difficult to meet the various electronic components that are increasing day by day.
於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the inventor believes that the above-mentioned defects can be improved. Nate has devoted himself to research and application of scientific principles, and finally proposes an invention with reasonable design and effective improvement of the above-mentioned defects.
本發明實施例在於提供一種立體表面檢測方法及半導體檢測設備,其能有效地改善現有半導體檢測設備及其檢測方法所可能產生的缺陷。 The embodiments of the present invention provide a three-dimensional surface inspection method and a semiconductor inspection device, which can effectively improve the defects that may occur in the existing semiconductor inspection device and the inspection method.
本發明實施例公開一種立體表面檢測方法,其用來檢測一電子元件,並且所述電子元件的外表面包含有兩個端面及位於兩個所述端面之間的一環側面,所述立體表面檢測方法包括:一環側面檢測步驟:使所述電子 元件與一反射件進行相對移動,以將所述電子元件置放於所述反射件的一反射面與一側視覺單元之間;其中,所述反射面包圍形成有一截圓錐狀空間,所述電子元件的至少部分所述環側面位於所述截圓錐狀空間之內,以使所述環側面的影像通過所述反射面的反射而投射至所述側視覺單元。 An embodiment of the present invention discloses a three-dimensional surface detection method, which is used to detect an electronic component, and the outer surface of the electronic component includes two end surfaces and a ring side surface located between the two end surfaces. The three-dimensional surface detection method The method includes: a ring side detection step: making the electronic The element and a reflector are relatively moved to place the electronic element between a reflecting surface of the reflector and one side of the visual unit; wherein, the reflecting surface surrounds and forms a truncated cone-shaped space, and the At least a part of the side surface of the ring of the electronic component is located in the truncated cone-shaped space, so that the image of the side surface of the ring is projected to the side vision unit through the reflection of the reflective surface.
本發明實施例也公開一種半導體檢測設備,其用來檢測一電子元件,並且所述電子元件的外表面包含有兩個端面及位於兩個所述端面之間的一環側面,所述半導體檢測設備包括:一反射件,其內側包含有一反射面,並且所述反射面包圍形成有一截圓錐狀空間;一側視覺單元,其用來接收來自所述反射面所反射的光線;以及一取放單元,能用來固持並移動所述電子元件至所述反射面與所述側視覺單元之間,以使至少部分所述環側面位於所述截圓錐狀空間之內,並且所述環側面的影像通過所述反射面的反射而投射至所述側視覺單元。 The embodiment of the present invention also discloses a semiconductor testing device, which is used for testing an electronic component, and the outer surface of the electronic component includes two end surfaces and a ring side surface located between the two end surfaces. The semiconductor testing device It includes: a reflector, the inner side of which includes a reflecting surface, and the reflecting surface surrounds a truncated cone-shaped space; a visual unit on one side is used to receive the light reflected from the reflecting surface; and a pick-and-place unit , can be used to hold and move the electronic component between the reflective surface and the side vision unit, so that at least part of the ring side is located in the frustoconical space, and the image of the ring side Projected to the side vision unit through the reflection of the reflective surface.
本發明實施例另公開一種半導體檢測設備,其用來檢測一電子元件,並且所述電子元件的外表面包含有兩個端面及位於兩個所述端面之間的一環側面,所述半導體檢測設備包括:一反射件,其內側包含有一反射面,並且所述反射面包圍形成有一截圓錐狀空間;一側視覺單元,其用來接收來自所述反射面所反射的光線;以及一載台,用來供所述電子元件置放;其中,當所述電子元件置放於所述載台上時,所述反射件能被朝向所述電子元件移動,以使至少部分所述環側面位於所述截圓錐狀空間之內,並且所述環側面的影像通過所述反射面的反射而投射至所述側視覺單元。 An embodiment of the present invention further discloses a semiconductor testing device, which is used for testing an electronic component, and the outer surface of the electronic component includes two end surfaces and a ring side surface located between the two end surfaces. The semiconductor testing device It includes: a reflector, the inner side of which includes a reflecting surface, and the reflecting surface surrounds a truncated cone-shaped space; a visual unit on one side is used to receive the light reflected from the reflecting surface; and a stage, used for placing the electronic components; wherein, when the electronic components are placed on the carrier, the reflector can be moved towards the electronic components so that at least part of the side of the ring is located on the stage inside the truncated cone-shaped space, and the image on the side surface of the ring is projected to the side vision unit through the reflection of the reflective surface.
綜上所述,本發明實施例所公開的立體表面檢測方法及半導體檢測設備,其在反射件的反射面形成有截圓錐狀空間,以使位於上述截圓錐狀空間內的電子元件能夠通過反射面的反射而將環側面的影像投射至所述側視覺單元,據以令所述電子元件的環側面能夠被側視覺單元所完整地取像。 據此,所述立體表面檢測方法及半導體檢測設備進可以適用於各種不同類型的電子元件檢測。 To sum up, in the three-dimensional surface detection method and the semiconductor detection device disclosed in the embodiments of the present invention, a truncated cone-shaped space is formed on the reflection surface of the reflector, so that the electronic components located in the above-mentioned truncated cone-shaped space can pass the reflection The image of the side of the ring is projected to the side vision unit through the reflection of the surface, so that the side of the ring of the electronic component can be completely captured by the side vision unit. Accordingly, the three-dimensional surface inspection method and the semiconductor inspection apparatus can be applied to inspection of various types of electronic components.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, rather than make any claims to the protection scope of the present invention. limit.
100:半導體檢測設備 100: Semiconductor testing equipment
1:取放單元 1: Pick and place unit
11:吸取器 11: Extractor
12:支架 12: Bracket
2:供應單元 2: Supply unit
3:載台 3: Carrier
4:校正視覺單元 4: Correct the vision unit
5:承載單元 5: Bearing unit
6:反射件 6: Reflector
61:反射面 61: Reflective surface
62:截圓錐狀空間 62: frustoconical space
63:中心軸線 63: Central axis
64:貫孔 64: Through hole
7:側視覺單元 7: Side Vision Unit
8:底視覺單元 8: Bottom visual unit
P:圓環狀投影區 P: annular projection area
E:電子元件 E: electronic components
E1:端面 E1: end face
E2:環側面 E2: Ring side
圖1為本發明實施例一的半導體檢測設備的示意圖。 FIG. 1 is a schematic diagram of a semiconductor testing apparatus according to Embodiment 1 of the present invention.
圖2為圖1中的電子元件的環側面投射至側視覺單元的平面示意圖。 FIG. 2 is a schematic plan view of the ring side of the electronic component in FIG. 1 projected onto the side vision unit.
圖3為圖1中的反射件與側視覺單元的結構搭配採用態樣A的示意圖。 FIG. 3 is a schematic diagram of the structural combination of the reflector and the side vision unit in FIG. 1 using aspect A. FIG.
圖4為圖1中的反射件與側視覺單元的結構搭配採用態樣B的示意圖。 FIG. 4 is a schematic diagram of the structural combination of the reflector and the side vision unit in FIG. 1 using aspect B. FIG.
圖5為圖1中的反射件與側視覺單元的結構搭配採用態樣C的示意圖。 FIG. 5 is a schematic diagram of the structural matching of the reflector and the side vision unit in FIG. 1 using aspect C. FIG.
圖6為本發明實施例一的取放單元的立體示意圖。 FIG. 6 is a three-dimensional schematic diagram of the pick-and-place unit according to the first embodiment of the present invention.
圖7為本發明實施例二的半導體檢測設備的示意圖。
FIG. 7 is a schematic diagram of a semiconductor testing device according to
圖8為本發明實施例三的半導體檢測設備的示意圖。
FIG. 8 is a schematic diagram of a semiconductor testing device according to
以下是通過特定的具體實施例來說明本發明所公開有關“立體表面檢測方法及半導體檢測設備”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實 施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following are specific embodiments to illustrate the embodiments of the "three-dimensional surface inspection method and semiconductor inspection device" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention may be embodied in other different embodiments Embodiments are implemented or applied, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although terms such as "first", "second" and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one element from another element, or a signal from another signal. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
請參閱圖1至圖6所示,其為本發明的實施例一。本實施例公開一種立體表面檢測方法及半導體檢測設備100,並且所述立體表面檢測方法於本實施例中是通過上述半導體檢測設備100來實施,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述立體表面檢測方法也可以是通過其他檢測設備來實現。
Please refer to FIG. 1 to FIG. 6 , which are Embodiment 1 of the present invention. This embodiment discloses a three-dimensional surface inspection method and a
再者,如圖1所示,所述立體表面檢測方法及半導體檢測設備100各是用來檢測一電子元件E,並且所述電子元件E的外表面包含有兩個端面E1及位於兩個所述端面E1之間的一環側面E2。需說明的是,現有的半導體檢測設備及其檢測方法最不適合檢測的電子元件類型為:電子元件的環側面包含有曲面區域、或是電子元件包含有圓柱段。據此,於本實施例的電子元件E是以包含有一圓柱段(其所對應的環側面E2相當於包含有一曲面區域)來說明,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,所述立體表面檢測方法及半導體檢測設備100也可以是用來檢測呈方柱狀的電子元
件。
Furthermore, as shown in FIG. 1 , the three-dimensional surface inspection method and the
此外,為了便於說明本實施例,以下將先介紹所述半導體檢測設備100的構造及其具備的功能,而後再介紹通過上述半導體檢測設備100來實施的立體表面檢測方法。其中,所述半導體檢測設備100於本實施例中主要是以說明其相關於所述立體表面檢測方法的構件,但本發明不受限於此。也就是說,在本發明未繪示的其他實施例中,所述半導體檢測設備100也可以包含未記載於下述的其他構件。
In addition, in order to facilitate the description of this embodiment, the structure and functions of the
所述半導體檢測設備100於本實施例中包含有一取放單元1、一供應單元2、一載台3與一校正視覺單元4、一承載單元5、以及一反射件6與一側視覺單元7。其中,所述供應單元2、載台3、反射件6、及承載單元5是位於所述取放單元1的移動路徑上,所述校正視覺單元4對應於所述載台3設置,而所述側視覺單元7對應於所述反射件6設置。
The
所述取放單元1是用來固持並移動所述電子元件E,所以取放單元1可以是能符合上述要求的各種構件(如:機械手臂或吸取器),本發明在此不加以限制。再者,所述取放單元1於本實施例中是以一次固持並移動單個電子元件E來說明,但在本發明未繪示的其他實施例中,所述取放單元1也可以是能夠同時固持並移動多個電子元件E的構造。 The pick-and-place unit 1 is used to hold and move the electronic component E, so the pick-and-place unit 1 can be various components (eg, a robotic arm or an extractor) that can meet the above requirements, which is not limited in the present invention. Furthermore, the pick-and-place unit 1 is described by holding and moving a single electronic component E at one time in this embodiment, but in other embodiments not shown in the present invention, the pick-and-place unit 1 may also be capable of A structure for holding and moving a plurality of electronic components E at the same time.
所述供應單元2(如:托盤)用以供多個所述電子元件E置放,以使所述取放單元1能自所述供應單元2擷取所述電子元件E並朝所述載台3移動。當所述電子元件E被置放於上述載台3時,所述載台3能通過所述校正視覺單元4來對所述電子元件E進行對位校正。其中,所述校正視覺單元4例如是影像擷取器,並且所述載台3能依據上述校正視覺單元4所取得的資訊,來對所述電子元件E進行相對移動,據以令電子元件E處在預定的位置上。
The supply unit 2 (eg: a tray) is used for placing a plurality of the electronic components E, so that the pick-and-place unit 1 can extract the electronic components E from the
所述反射件6的內側包含有一反射面61,並且所述反射面61包圍
形成有一截圓錐狀空間62,而所述側視覺單元7(如:影像擷取器)用來接收來自所述反射面61所反射的光線。其中,所述反射件6與上述側視覺單元7之間的配合關係較佳是:所述側視覺單元7位於所述反射面61的正下方,並且所述側視覺單元7坐落在所述反射面61的一中心軸線63上,而所述截圓錐狀空間62的尺寸(或容積)是由遠離所述側視覺單元7朝向所述側視覺單元7的方向漸增。
The inner side of the reflecting
進一步地說,當所述電子元件E進行對位校正之後,所述取放單元1能由所述載台3固持並移動所述電子元件E至所述反射面61與所述側視覺單元7之間,以使所述電子元件E被所述取放單元1所固持且其至少部分所述環側面E2位於所述截圓錐狀空間62之內,並且所述環側面E2的影像通過所述反射面61的反射而投射至所述側視覺單元7。再者,所述承載單元5(如:基板)用以供所述取放單元1在所述側視覺單元7接收所述環側面E2的所述影像之後,將所述電子元件E置放於其上。
Further, after the electronic component E is aligned and corrected, the pick-and-place unit 1 can be held by the
更詳細地說,投射至所述側視覺單元7的所述環側面E2的所述影像呈一圓環狀投影區P(如:圖2),並且所述圓環狀投影區P的一圓心較佳是坐落於所述反射面61的中心軸線63上。其中,所述反射件6與所述側視覺單元7的具體結構搭配可以依據設計需求而加以調整變化,而於本實施例中,所述反射件6與側視覺單元7的具體結構搭配是以下述態樣A~態樣C來舉例說明,但本發明不受限於此。
More specifically, the image projected to the annular side surface E2 of the
態樣A:如圖3所示,所述反射件6與所述側視覺單元7的相對位置保持不變,所述反射件6沿所述中心軸線63形成連通至所述截圓錐狀空間62的一貫孔64,並且所述貫孔64用來供所述取放單元1及其所固持的所述電子元件E穿過。
Aspect A: As shown in FIG. 3 , the relative position of the
態樣B:如圖4所示,所述反射件6對應於所述取放單元1設置,
並且所述反射面61與所述取放單元1的相對位置保持不變(也就是,所述反射件6固定於取放單元1);當所述取放單元1固持所述電子元件E時,至少部分所述環側面E2保持位於所述截圓錐狀空間62之內,並且所述反射面61與所述電子元件E能被同步移向所述側視覺單元7。
Aspect B: As shown in FIG. 4 , the
態樣C:如圖5所示,所述反射件6對應於所述取放單元1設置,所述反射面61與所述取放單元1能同步朝向所述側視覺單元7移動,並且所述取放單元1能相對於所述反射件6移動;所述反射件6沿所述中心軸線63形成連通至所述截圓錐狀空間62的一貫孔64,所述貫孔64用來供所述取放單元1及其所固持的所述電子元件E穿過。
Aspect C: As shown in FIG. 5 , the
此外,所述半導體檢測設備100於本實施例中主要是以包含相關於立體表面檢測方法的上述元件來說明,但所述半導體檢測設備100也可以依據設計需求而進一步設置有其他元件。舉例來說,所述半導體檢測設備100可以在供應單元2與承載單元5的上方各設置有一視覺單元(未標示),用以進行電子元件E的相關對位校正;或者,所述半導體檢測設備100也可包含有對應於取放單元1移動路徑設置的一底視覺單元8,用以擷取電子元件E的端面E1影像。又或者,在本發明未繪示的其他實施例中,所述反射件6、側視覺單元7、及取放單元1也可以整合作為一個模組,進而單獨地運用(如:販賣)或搭配其他構件使用。
In addition, the
以上為本實施例的半導體檢測設備100說明,以下接著介紹通過上述半導體檢測設備100而實現的所述立體表面檢測方法。其中,已經在上述半導體檢測設備100說明中述及的技術特徵,則不再於以下說明之中贅述。但須再次強調的是,本發明的立體表面檢測方法也可以是通過其他檢測設備來實現。
The
進一步地說,如圖1所示,所述立體表面檢測方法於本實施例中 包含有:一第一移載步驟S10、一對位校正步驟S20、一第二移載步驟S30、一底面檢測步驟S40、及一環側面檢測步驟S50。其中,上述各個步驟S10~S50的具體實施手段及順序可以依據設計需求而加以調整變化,並不受限於本實施例所載。 Further, as shown in FIG. 1 , the three-dimensional surface detection method is in this embodiment It includes: a first transfer step S10, a pair alignment step S20, a second transfer step S30, a bottom surface detection step S40, and a ring side surface detection step S50. The specific implementation means and sequence of the above steps S10 to S50 can be adjusted and changed according to design requirements, and are not limited to those in this embodiment.
再者,所述環側面檢測步驟S50於本實施例中雖是以搭配於上述步驟S10~S40來說明,但於本發明未繪示的其他實施例中,所述環側面檢測步驟S50也可以是搭配其他不同的步驟。以下接著說明本實施例立體表面檢測方法的各個步驟S10~S50。 Furthermore, although the ring side detection step S50 is described in conjunction with the above-mentioned steps S10 to S40 in this embodiment, in other embodiments not shown in the present invention, the ring side detection step S50 may also be is combined with other different steps. Next, each step S10 to S50 of the three-dimensional surface detection method of this embodiment will be described below.
所述第一移載步驟S10:以所述取放單元1自所述供應單元2擷取一個電子元件E並移動至所述載台3。
The first transfer step S10 : use the pick-and-place unit 1 to pick up an electronic component E from the
所述對位校正步驟S20:通過所述校正視覺單元4來對所述電子元件E相較於所述載台3進對位校正;例如:所述載台3能依據上述校正視覺單元4所取得的資訊,來對所述電子元件E進行相對移動,據以令電子元件E處在預定的位置上。
The alignment correction step S20 : performing alignment correction on the electronic component E compared to the
所述第二移載步驟S30:以所述取放單元1將所述電子元件E沿一預設路徑自所述載台3移動至所述承載單元5。於本實施例中,所述電子元件E於所述載台3上通過所述側視覺單元7與所述載台3實施所述對位校正步驟S20之後的位置定義為一第一預定位置,並且所述電子元件E設置於所述承載單元5上的位置定義為一第二預定位置。
The second transferring step S30 : using the pick-and-place unit 1 to move the electronic component E from the
於本實施例中,在所述電子元件E被移動至所述第二預定位置之前,實施所述底面檢測步驟S40與所述環側面檢測步驟S50,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述底面檢測步驟S40也可以是所述電子元件E被移動至所述載台3之前實施。以下接著說明所述底面檢測步驟S40與所述環側面檢測步驟S50的實施方式。
In this embodiment, before the electronic component E is moved to the second predetermined position, the bottom surface detection step S40 and the ring side surface detection step S50 are performed, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the bottom surface detection step S40 may also be performed before the electronic component E is moved to the
所述底面檢測步驟S40:於實施所述第二移載步驟S30,以使所述電子元件E自所述第一預定位置朝向所述第二預定位置移動的過程之中,以所述底視覺單元8擷取遠離所述取放單元1的所述電子元件E的所述端面E1(如:圖1中位於底部的端面E1)的影像。
The bottom surface detection step S40: in the process of implementing the second transfer step S30, so as to move the electronic component E from the first predetermined position to the second predetermined position, use the bottom vision The
所述環側面檢測步驟S50:使所述電子元件E與反射件6進行相對移動,以將所述電子元件E置放於所述反射件6的反射面61與側視覺單元7之間(如:所述電子元件E的至少部分所述環側面E2位於所述截圓錐狀空間62之內),以使所述環側面E2的影像通過所述反射面61的反射而投射至所述側視覺單元7。
The ring side surface detection step S50: the electronic component E and the
進一步地說,當所述電子元件E具有曲面區域時,所述曲面區域位於所述截圓錐狀空間62之內,並且在垂直所述中心軸線63的所述電子元件E的一截面上,所述曲面區域的一曲率中心位於所述中心軸線63上。或者,當所述電子元件E具有圓柱段時,所述圓柱段位於所述截圓錐狀空間62之內,並且所述圓柱段的一中心線重疊於所述中心軸線63。
Further, when the electronic component E has a curved area, the curved area is located within the truncated cone-shaped
更詳細地說,所述環側面檢測步驟S50的具體結構搭配可以依據設計需求而加以調整變化,而於本實施例中,所述環側面檢測步驟S50是以通過上述態樣A~態樣C來實現與舉例說明,但本發明不受限於此。 In more detail, the specific structure of the ring side detection step S50 can be adjusted and changed according to design requirements, and in this embodiment, the ring side detection step S50 is performed through the above-mentioned aspects A to C to be implemented and exemplified, but the present invention is not limited thereto.
態樣A:如圖1和圖3所示,所述側視覺單元7對應於所述預設路徑設置,並且所述反射件對應於所述側視覺單元7設置,以使所述反射面61與所述側視覺單元7的相對位置保持不變。於所述環側面檢測步驟S50中,所述取放單元1將所述電子元件E移動穿入所述反射件6,以使所述電子元件E的至少部分所述環側面E2位於所述截圓錐狀空間62之內。
Aspect A: As shown in FIG. 1 and FIG. 3 , the
態樣B:如圖1和圖4所示,所述側視覺單元7對應於所述預設路徑設置;所述反射件6對應於所述取放單元1設置,並且所述反射面61與所述
取放單元1的相對位置保持不變。於所述環側面檢測步驟S50中,所述取放單元1擷取所述電子元件E,以使所述電子元件E的至少部分所述環側面E2保持位於所述截圓錐狀空間62之內,並且所述反射面61與所述電子元件E被同步移向所述側視覺單元7。
Aspect B: As shown in FIG. 1 and FIG. 4 , the
態樣C:如圖1和圖5所示,所述側視覺單元7對應於所述預設路徑設置;所述反射件6對應於所述取放單元1設置,並且所述反射面61與所述取放單元1能沿著所述預設路徑同步移動。於所述環側面檢測步驟S50中,當所述取放單元1將所述電子元件E移動至對應於所述側視覺單元7的位置時,所述取放單元1使所述電子元件E相對於所述反射件6移動並穿入所述反射件6,以使至少部分所述環側面E2位於所述截圓錐狀空間62之內。
Aspect C: As shown in FIG. 1 and FIG. 5 , the
需補充說明的是,所述取放單元1可以是單個吸取器來實現所述電子元件E自所述供應單元2至所述承載單元5之間的所有移動;或者,所述取放單元1可以是多個吸取器來分別實現所述電子元件E自所述供應單元2至所述承載單元5之間的所有移動。
It should be added that the pick-and-place unit 1 may be a single suction device to realize all the movement of the electronic component E from the
舉例來說,如圖6所示,所述取放單元1包含有設置於所述載板3與所述承載單元5之間的四個吸取器11及連接四個所述吸取器11的至少一個支架12,並且上述四個吸取器11通過上述至少一個支架12而呈圓環狀排列與移動。其中,所述載板3、所述底視覺單元8、所述反射件6、及所述承載單元5可以是分別對應於上述四個吸取器11,據以能夠通過所述至少一個支架12的轉動,而使上述四個吸取器11同步對所述載板3、所述底視覺單元8、所述反射件6、及所述承載單元5進行相關作業。
For example, as shown in FIG. 6 , the pick-and-place unit 1 includes four
此外,在本發明未繪示的其他實施例中,所述取放單元1所包含的吸取器11數量也可以超過四個,而非對應於上述載板3、所述底視覺單元8、所述反射件6、及所述承載單元5的吸取器11則可以用來進行其他的檢測作
業。另,所述取放單元1的多個吸取器11與至少一個支架12也能以多個機械手臂取代。
In addition, in other embodiments not shown in the present invention, the number of
請參閱圖7所示,其為本發明的實施例二,本實施例類似於上述實施例一,所以兩個實施例的相同處則不再加以贅述,而本實施例與上述實施例一的差異主要在於:所述反射件6與側視覺單元7的位置於本實施例中是大致對應於所述載台3之前的所述取放單元1移動路徑。
Please refer to FIG. 7 , which is the second embodiment of the present invention. This embodiment is similar to the above-mentioned first embodiment, so the similarities between the two embodiments will not be repeated. The main difference is that the positions of the
進一步地說,當所述側視覺單元7接收所述環側面E2的所述影像之後,所述取放單元1能將所述電子元件E移動至所述載台3,以供使所述校正視覺單元4能對所述電子元件E進行對位校正。而所述承載單元5則是用以供所述取放單元1在所述電子元件E進行對位校正之後,將所述電子元件E置放於其上。
Further, after the
換個角度來說,所述電子元件E於所述供應單元2上的位置定義為一第一預定位置,並且所述電子元件E設置於所述載台3上的位置定義為一第二預定位置。據此,所述環側面檢測步驟S50同樣是在所述電子元件E被移動至所述第二預定位置之前被實施。
In other words, the position of the electronic component E on the
請參閱圖8所示,其為本發明的實施例三,本實施例類似於上述實施例一,所以兩個實施例的相同處則不再加以贅述,而本實施例與上述實施例一的差異主要在於:本實施例的側視覺單元7對應於所述載台3設置並兼具有所述校正視覺單元4的功能,而所述反射件6則是可移動地設置於所述載台3上。
Please refer to FIG. 8 , which is the third embodiment of the present invention. This embodiment is similar to the above-mentioned first embodiment, so the similarities between the two embodiments will not be repeated. The main difference is that: the
進一步地說,所述反射件6與側視覺單元7之間的配合關係較佳是:所述側視覺單元7位於所述反射面61的正上方,並且所述側視覺單元7坐
落在反射面61的中心軸線63,而所述截圓錐狀空間62的尺寸(或容積)是由所述載台3朝向所述側視覺單元7的方向漸增。
Further, the matching relationship between the
再者,當所述電子元件E置放於所述載台3上時,所述載台3能通過所述側視覺單元7來對所述電子元件E進行對位校正(也就是,實施所述對位校正步驟S20);並且所述反射件6能在所述電子元件E進行對位校正之後才朝向所述電子元件E移動,以使至少部分所述環側面E2位於所述截圓錐狀空間62之內,並且所述環側面E2的影像通過所述反射面61的反射而投射至所述側視覺單元7。
Furthermore, when the electronic component E is placed on the
換個角度來說,所述電子元件E於所述載台3上通過所述側視覺單元7與所述載台3實施所述對位校正步驟S20之後的位置定義為所述第一預定位置,而所述電子元件E設置於所述承載單元5上的位置定義為一第二預定位置。據此,所述環側面檢測步驟S50同樣是在所述電子元件E被移動至所述第二預定位置之前被實施。進一步地說,於所述環側面檢測步驟S150中,所述反射件6可以是朝向位於所述第一預定位置(或朝向已實施對位校正步驟S20)的所述電子元件E移動,以使所述電子元件E的至少部分所述環側面E2位於所述截圓錐狀空間62之內,但本發明不以此為限。
In other words, the position of the electronic component E on the
舉例來說,在本發明未繪示的其他實施例中,所述電子元件E於所述載台3上但尚未實施所述對位校正步驟S20的位置可以定義為所述第一預定位置,而所述電子元件E設置於所述承載單元5上的位置定義為一第二預定位置,所以在所述環側面檢測步驟S150中,所述反射件6可以是朝向尚未實施對位校正步驟S20的所述電子元件E移動,以使所述電子元件E的至少部分所述環側面E2位於所述截圓錐狀空間62之內。
For example, in other embodiments not shown in the present invention, the position of the electronic component E on the
綜上所述,本發明實施例所公開的立體表面檢測方法及半導體 檢測設備,在反射件的反射面形成有截圓錐狀空間,以使位於上述截圓錐狀空間內的電子元件能夠通過反射面的反射而將環側面的影像投射至所述側視覺單元,據以令所述電子元件的環側面能夠被側視覺單元所完整地取像。據此,所述立體表面檢測方法及半導體檢測設備進可以適用於各種不同類型的電子元件檢測。 To sum up, the three-dimensional surface detection method and semiconductor disclosed by the embodiments of the present invention Detection equipment, a truncated cone-shaped space is formed on the reflective surface of the reflector, so that the electronic components located in the truncated cone-shaped space can project the image of the side surface of the ring to the side vision unit through the reflection of the reflective surface, so as to The ring side of the electronic component can be completely imaged by the side vision unit. Accordingly, the three-dimensional surface inspection method and the semiconductor inspection apparatus can be applied to inspection of various types of electronic components.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。 The content disclosed above is only a preferred feasible embodiment of the present invention, and is not intended to limit the patent scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the patent scope of the present invention. Inside.
100:半導體檢測設備100: Semiconductor testing equipment
1:取放單元1: Pick and place unit
2:供應單元2: Supply unit
3:載台3: Carrier
4:校正視覺單元4: Correct the vision unit
5:承載單元5: Bearing unit
6:反射件6: Reflector
61:反射面61: Reflective surface
62:截圓錐狀空間62: frustoconical space
63:中心軸線63: Central axis
64:貫孔64: Through hole
7:側視覺單元7: Side Vision Unit
8:底視覺單元8: Bottom visual unit
E:電子元件E: electronic components
E1:端面E1: end face
E2:環側面E2: Ring side
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004163425A (en) * | 2002-10-22 | 2004-06-10 | Sealive Inc | Visual examination apparatus |
| JP2010085179A (en) * | 2008-09-30 | 2010-04-15 | Yutaka:Kk | Side-surface inspecting device |
| JP2014163916A (en) * | 2013-02-28 | 2014-09-08 | Nejilaw Inc | Imaging system |
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| TW202130992A (en) | 2021-08-16 |
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